ATE180357T1 - Verfahren zum aufbringen eines si oder ge enthaltenden materials auf eine oberfläche aus cu oder ni - Google Patents

Verfahren zum aufbringen eines si oder ge enthaltenden materials auf eine oberfläche aus cu oder ni

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Publication number
ATE180357T1
ATE180357T1 AT93105142T AT93105142T ATE180357T1 AT E180357 T1 ATE180357 T1 AT E180357T1 AT 93105142 T AT93105142 T AT 93105142T AT 93105142 T AT93105142 T AT 93105142T AT E180357 T1 ATE180357 T1 AT E180357T1
Authority
AT
Austria
Prior art keywords
applying
material containing
surface made
bonded
materials
Prior art date
Application number
AT93105142T
Other languages
English (en)
Inventor
Michael John Brady
Curtis Edward Farrell
Sung Kwon Kang
Jeffrey Robert Marino
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE180357T1 publication Critical patent/ATE180357T1/de

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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
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    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
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    • C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemically Coating (AREA)
  • Chemical Treatment Of Metals (AREA)
AT93105142T 1992-04-24 1993-03-29 Verfahren zum aufbringen eines si oder ge enthaltenden materials auf eine oberfläche aus cu oder ni ATE180357T1 (de)

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AT (1) ATE180357T1 (de)
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US6255217B1 (en) * 1999-01-04 2001-07-03 International Business Machines Corporation Plasma treatment to enhance inorganic dielectric adhesion to copper
US6271595B1 (en) 1999-01-14 2001-08-07 International Business Machines Corporation Method for improving adhesion to copper
US6251694B1 (en) * 1999-05-26 2001-06-26 United Microelectronics Corp. Method of testing and packaging a semiconductor chip
US6622907B2 (en) * 2002-02-19 2003-09-23 International Business Machines Corporation Sacrificial seed layer process for forming C4 solder bumps
US6703291B1 (en) * 2002-12-17 2004-03-09 Intel Corporation Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions
JP3674927B2 (ja) * 2003-06-13 2005-07-27 Ｔｄｋ株式会社 電子部品の製造方法および電子部品
US20060147683A1 (en) * 2004-12-30 2006-07-06 Harima Chemicals, Inc. Flux for soldering and circuit board
DE102005028906A1 (de) * 2005-06-22 2006-12-28 Giesecke & Devrient Gmbh Vorrichtung für die Prüfung von Banknoten
US20070117475A1 (en) * 2005-11-23 2007-05-24 Regents Of The University Of California Prevention of Sn whisker growth for high reliability electronic devices
US7659200B2 (en) * 2007-01-05 2010-02-09 International Business Machines Corporation Self-constrained anisotropic germanium nanostructure from electroplating
US7785982B2 (en) * 2007-01-05 2010-08-31 International Business Machines Corporation Structures containing electrodeposited germanium and methods for their fabrication
US8304062B2 (en) * 2007-07-20 2012-11-06 Fry's Metals, Inc. Electrical conductors and methods of making and using them
US7935408B2 (en) * 2007-10-26 2011-05-03 International Business Machines Corporation Substrate anchor structure and method
JP5042894B2 (ja) * 2008-03-19 2012-10-03 松田産業株式会社 電子部品およびその製造方法
US8741738B2 (en) * 2011-06-08 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabrication of a semiconductor apparatus comprising substrates including Al/Ge and Cu contact layers to form a metallic alloy
JP5860246B2 (ja) * 2011-08-25 2016-02-16 京セラサーキットソリューションズ株式会社 配線基板
US8669655B2 (en) * 2012-08-02 2014-03-11 Infineon Technologies Ag Chip package and a method for manufacturing a chip package
US9988713B2 (en) 2013-03-12 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Thin film devices and methods for preparing thin film devices
US9627344B2 (en) * 2013-04-04 2017-04-18 Rohm Co., Ltd. Semiconductor device
US9147605B2 (en) * 2013-06-14 2015-09-29 Arizona Board Of Regents On Behalf Of Arizona State University Thin film devices and low temperature process to make thin film devices
KR101771467B1 (ko) 2013-10-17 2017-08-25 엘에스산전 주식회사 배선용 차단기의 검출기구부 간격 조절방법
US9559249B2 (en) 2014-07-22 2017-01-31 Arizona Board Of Regents Microwave-annealed indium gallium zinc oxide films and methods of making the same
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DE69324959T2 (de) 1999-12-02
CN1112729C (zh) 2003-06-25
TW217459B (de) 1993-12-11
CA2089791C (en) 1998-11-24
EP0566901A2 (de) 1993-10-27
DE69324959D1 (de) 1999-06-24
JPH0621140A (ja) 1994-01-28
EP0566901A3 (de) 1994-01-26
CA2089791A1 (en) 1993-10-25
MY134716A (en) 2007-12-31
EP0566901B1 (de) 1999-05-19
CN1082770A (zh) 1994-02-23
KR930022536A (ko) 1993-11-24
ES2131080T3 (es) 1999-07-16
KR0135739B1 (ko) 1998-04-24
US5855993A (en) 1999-01-05
JP2526007B2 (ja) 1996-08-21
BR9301497A (pt) 1993-10-26

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