ATE152287T1 - Ein verfahren zur herstellung selbstausrichtender halbleiteranordnungen - Google Patents
Ein verfahren zur herstellung selbstausrichtender halbleiteranordnungenInfo
- Publication number
- ATE152287T1 ATE152287T1 AT89900987T AT89900987T ATE152287T1 AT E152287 T1 ATE152287 T1 AT E152287T1 AT 89900987 T AT89900987 T AT 89900987T AT 89900987 T AT89900987 T AT 89900987T AT E152287 T1 ATE152287 T1 AT E152287T1
- Authority
- AT
- Austria
- Prior art keywords
- contacts
- layer
- semiconductor devices
- polysilicon
- layer structure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000012856 packing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12782087A | 1987-12-02 | 1987-12-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE152287T1 true ATE152287T1 (de) | 1997-05-15 |
Family
ID=22432120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT89900987T ATE152287T1 (de) | 1987-12-02 | 1988-12-02 | Ein verfahren zur herstellung selbstausrichtender halbleiteranordnungen |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0344292B1 (de) |
JP (1) | JPH02502417A (de) |
AT (1) | ATE152287T1 (de) |
DE (1) | DE3855889T2 (de) |
WO (1) | WO1989005516A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5151387A (en) * | 1990-04-30 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Polycrystalline silicon contact structure |
US7923313B1 (en) | 2010-02-26 | 2011-04-12 | Eastman Kodak Company | Method of making transistor including reentrant profile |
US8803203B2 (en) | 2010-02-26 | 2014-08-12 | Eastman Kodak Company | Transistor including reentrant profile |
US8847226B2 (en) | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including multiple reentrant profiles |
US8338291B2 (en) | 2011-01-07 | 2012-12-25 | Eastman Kodak Company | Producing transistor including multiple reentrant profiles |
US8383469B2 (en) | 2011-01-07 | 2013-02-26 | Eastman Kodak Company | Producing transistor including reduced channel length |
US7985684B1 (en) | 2011-01-07 | 2011-07-26 | Eastman Kodak Company | Actuating transistor including reduced channel length |
US8847232B2 (en) | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including reduced channel length |
US8409937B2 (en) | 2011-01-07 | 2013-04-02 | Eastman Kodak Company | Producing transistor including multi-layer reentrant profile |
US8492769B2 (en) | 2011-01-07 | 2013-07-23 | Eastman Kodak Company | Transistor including multi-layer reentrant profile |
US8304347B2 (en) | 2011-01-07 | 2012-11-06 | Eastman Kodak Company | Actuating transistor including multiple reentrant profiles |
US8592909B2 (en) | 2011-08-26 | 2013-11-26 | Eastman Kodak Company | Transistor including single layer reentrant profile |
US8617942B2 (en) | 2011-08-26 | 2013-12-31 | Eastman Kodak Company | Producing transistor including single layer reentrant profile |
US8637355B2 (en) | 2011-08-26 | 2014-01-28 | Eastman Kodak Company | Actuating transistor including single layer reentrant profile |
US8865576B2 (en) | 2011-09-29 | 2014-10-21 | Eastman Kodak Company | Producing vertical transistor having reduced parasitic capacitance |
US8803227B2 (en) | 2011-09-29 | 2014-08-12 | Eastman Kodak Company | Vertical transistor having reduced parasitic capacitance |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5420959B2 (de) * | 1974-01-23 | 1979-07-26 | ||
US4016587A (en) * | 1974-12-03 | 1977-04-05 | International Business Machines Corporation | Raised source and drain IGFET device and method |
JPS5254694A (en) * | 1975-10-31 | 1977-05-04 | Mitsubishi Kakoki Kk | Regeneration of catalysts for desulfurizing active carbons |
JPS5379783A (en) * | 1976-12-24 | 1978-07-14 | Toyo Rubber Chem Ind Co Ltd | Production of adsorbent |
NL190710C (nl) * | 1978-02-10 | 1994-07-01 | Nec Corp | Geintegreerde halfgeleiderketen. |
JPS54140483A (en) * | 1978-04-21 | 1979-10-31 | Nec Corp | Semiconductor device |
JPS55116443A (en) * | 1979-02-28 | 1980-09-08 | Agency Of Ind Science & Technol | Regeneration of dry type simultaneous desulfurization and denitrification catalyst |
JPS6037047B2 (ja) * | 1979-03-09 | 1985-08-23 | 住友重機械工業株式会社 | 脱硫用活性炭の再生法 |
JPS55163860A (en) * | 1979-06-06 | 1980-12-20 | Toshiba Corp | Manufacture of semiconductor device |
JPS57176746A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit and manufacture thereof |
US4374700A (en) * | 1981-05-29 | 1983-02-22 | Texas Instruments Incorporated | Method of manufacturing silicide contacts for CMOS devices |
JPS59150536A (ja) * | 1983-02-16 | 1984-08-28 | Ishikawajima Harima Heavy Ind Co Ltd | 脱硫用活性炭の再生方法 |
-
1988
- 1988-12-02 DE DE3855889T patent/DE3855889T2/de not_active Expired - Fee Related
- 1988-12-02 WO PCT/US1988/004291 patent/WO1989005516A1/en active IP Right Grant
- 1988-12-02 EP EP89900987A patent/EP0344292B1/de not_active Expired - Lifetime
- 1988-12-02 JP JP1500874A patent/JPH02502417A/ja active Pending
- 1988-12-02 AT AT89900987T patent/ATE152287T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1989005516A1 (en) | 1989-06-15 |
DE3855889T2 (de) | 1997-08-07 |
EP0344292B1 (de) | 1997-04-23 |
EP0344292A4 (de) | 1990-05-14 |
EP0344292A1 (de) | 1989-12-06 |
DE3855889D1 (de) | 1997-05-28 |
JPH02502417A (ja) | 1990-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |