ATE152287T1 - Ein verfahren zur herstellung selbstausrichtender halbleiteranordnungen - Google Patents

Ein verfahren zur herstellung selbstausrichtender halbleiteranordnungen

Info

Publication number
ATE152287T1
ATE152287T1 AT89900987T AT89900987T ATE152287T1 AT E152287 T1 ATE152287 T1 AT E152287T1 AT 89900987 T AT89900987 T AT 89900987T AT 89900987 T AT89900987 T AT 89900987T AT E152287 T1 ATE152287 T1 AT E152287T1
Authority
AT
Austria
Prior art keywords
contacts
layer
semiconductor devices
polysilicon
layer structure
Prior art date
Application number
AT89900987T
Other languages
English (en)
Inventor
Jacob D Haskell
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE152287T1 publication Critical patent/ATE152287T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT89900987T 1987-12-02 1988-12-02 Ein verfahren zur herstellung selbstausrichtender halbleiteranordnungen ATE152287T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12782087A 1987-12-02 1987-12-02

Publications (1)

Publication Number Publication Date
ATE152287T1 true ATE152287T1 (de) 1997-05-15

Family

ID=22432120

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89900987T ATE152287T1 (de) 1987-12-02 1988-12-02 Ein verfahren zur herstellung selbstausrichtender halbleiteranordnungen

Country Status (5)

Country Link
EP (1) EP0344292B1 (de)
JP (1) JPH02502417A (de)
AT (1) ATE152287T1 (de)
DE (1) DE3855889T2 (de)
WO (1) WO1989005516A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151387A (en) * 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US7923313B1 (en) 2010-02-26 2011-04-12 Eastman Kodak Company Method of making transistor including reentrant profile
US8803203B2 (en) 2010-02-26 2014-08-12 Eastman Kodak Company Transistor including reentrant profile
US7985684B1 (en) 2011-01-07 2011-07-26 Eastman Kodak Company Actuating transistor including reduced channel length
US8847232B2 (en) 2011-01-07 2014-09-30 Eastman Kodak Company Transistor including reduced channel length
US8304347B2 (en) 2011-01-07 2012-11-06 Eastman Kodak Company Actuating transistor including multiple reentrant profiles
US8492769B2 (en) 2011-01-07 2013-07-23 Eastman Kodak Company Transistor including multi-layer reentrant profile
US8409937B2 (en) 2011-01-07 2013-04-02 Eastman Kodak Company Producing transistor including multi-layer reentrant profile
US8847226B2 (en) 2011-01-07 2014-09-30 Eastman Kodak Company Transistor including multiple reentrant profiles
US8383469B2 (en) 2011-01-07 2013-02-26 Eastman Kodak Company Producing transistor including reduced channel length
US8338291B2 (en) 2011-01-07 2012-12-25 Eastman Kodak Company Producing transistor including multiple reentrant profiles
US8592909B2 (en) 2011-08-26 2013-11-26 Eastman Kodak Company Transistor including single layer reentrant profile
US8637355B2 (en) 2011-08-26 2014-01-28 Eastman Kodak Company Actuating transistor including single layer reentrant profile
US8617942B2 (en) 2011-08-26 2013-12-31 Eastman Kodak Company Producing transistor including single layer reentrant profile
US8803227B2 (en) 2011-09-29 2014-08-12 Eastman Kodak Company Vertical transistor having reduced parasitic capacitance
US8865576B2 (en) 2011-09-29 2014-10-21 Eastman Kodak Company Producing vertical transistor having reduced parasitic capacitance

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420959B2 (de) * 1974-01-23 1979-07-26
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
JPS5254694A (en) * 1975-10-31 1977-05-04 Mitsubishi Kakoki Kk Regeneration of catalysts for desulfurizing active carbons
JPS5379783A (en) * 1976-12-24 1978-07-14 Toyo Rubber Chem Ind Co Ltd Production of adsorbent
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
JPS54140483A (en) * 1978-04-21 1979-10-31 Nec Corp Semiconductor device
JPS55116443A (en) * 1979-02-28 1980-09-08 Agency Of Ind Science & Technol Regeneration of dry type simultaneous desulfurization and denitrification catalyst
JPS6037047B2 (ja) * 1979-03-09 1985-08-23 住友重機械工業株式会社 脱硫用活性炭の再生法
JPS55163860A (en) * 1979-06-06 1980-12-20 Toshiba Corp Manufacture of semiconductor device
JPS57176746A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit and manufacture thereof
US4374700A (en) * 1981-05-29 1983-02-22 Texas Instruments Incorporated Method of manufacturing silicide contacts for CMOS devices
JPS59150536A (ja) * 1983-02-16 1984-08-28 Ishikawajima Harima Heavy Ind Co Ltd 脱硫用活性炭の再生方法

Also Published As

Publication number Publication date
WO1989005516A1 (en) 1989-06-15
JPH02502417A (ja) 1990-08-02
EP0344292A4 (de) 1990-05-14
EP0344292B1 (de) 1997-04-23
DE3855889T2 (de) 1997-08-07
DE3855889D1 (de) 1997-05-28
EP0344292A1 (de) 1989-12-06

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