ATE127628T1 - Laser mit verteilter rückkoppelung. - Google Patents

Laser mit verteilter rückkoppelung.

Info

Publication number
ATE127628T1
ATE127628T1 AT90303530T AT90303530T ATE127628T1 AT E127628 T1 ATE127628 T1 AT E127628T1 AT 90303530 T AT90303530 T AT 90303530T AT 90303530 T AT90303530 T AT 90303530T AT E127628 T1 ATE127628 T1 AT E127628T1
Authority
AT
Austria
Prior art keywords
grating
distributed feedback
feedback
feedback laser
coupling
Prior art date
Application number
AT90303530T
Other languages
English (en)
Inventor
Leslie David Westbrook
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecomm filed Critical British Telecomm
Application granted granted Critical
Publication of ATE127628T1 publication Critical patent/ATE127628T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H01S3/0635—Thin film lasers in which light propagates in the plane of the thin film provided with a periodic structure, e.g. using distributed feed-back, grating couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Optical Communication System (AREA)
AT90303530T 1989-03-31 1990-04-02 Laser mit verteilter rückkoppelung. ATE127628T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898907304A GB8907304D0 (en) 1989-03-31 1989-03-31 Distributed feedback lasers

Publications (1)

Publication Number Publication Date
ATE127628T1 true ATE127628T1 (de) 1995-09-15

Family

ID=10654263

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90303530T ATE127628T1 (de) 1989-03-31 1990-04-02 Laser mit verteilter rückkoppelung.

Country Status (13)

Country Link
US (1) US5329542A (de)
EP (1) EP0390614B1 (de)
JP (1) JP2984365B2 (de)
KR (1) KR100236313B1 (de)
AT (1) ATE127628T1 (de)
AU (1) AU643684B2 (de)
CA (1) CA2049356C (de)
DE (1) DE69024064T2 (de)
ES (1) ES2076306T3 (de)
GB (1) GB8907304D0 (de)
HK (1) HK142496A (de)
IE (1) IE70326B1 (de)
WO (1) WO1990012436A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2982422B2 (ja) * 1991-09-20 1999-11-22 三菱電機株式会社 半導体レーザおよびその製造方法
FR2690572B1 (fr) * 1992-04-24 1994-07-22 France Telecom Structure laser a retroaction repartie.
DE4334525A1 (de) * 1993-10-09 1995-04-13 Deutsche Bundespost Telekom Optoelektronisches Bauelement mit verteilter Rückkopplung und variierbarem Kopplungskoeffizienten
FR2713350B1 (fr) * 1993-12-06 1995-12-29 Franck Delorme Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.
DE4407832A1 (de) * 1994-03-09 1995-09-14 Ant Nachrichtentech Verfahren zur Herstellung eines optoelektronischen Bauelements mit einer definierten axialen Variation des Kopplungskoeffizienten und definierter axialer Verteilung der Phasenverschiebung
EP1130715A2 (de) * 1994-09-28 2001-09-05 Matsushita Electric Industrial Co., Ltd. Halbleiterlaser mit verteilter Rückkopplung und Herstellungsverfahren
US5727013A (en) * 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
EP0782226A1 (de) 1995-12-28 1997-07-02 Lucent Technologies Inc. Herstellungsverfahren für einen Halbleiterlaser mit Verteilter Rüchkopplung und entlang des Resonators varierender Gitterkopplung
JPH1098235A (ja) * 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法
JP3298619B2 (ja) * 1998-06-10 2002-07-02 日本電気株式会社 半導体レーザの製造方法
JP3141854B2 (ja) * 1998-09-28 2001-03-07 日本電気株式会社 光半導体装置の製造方法
JP3594826B2 (ja) 1999-02-09 2004-12-02 パイオニア株式会社 窒化物半導体発光素子及びその製造方法
WO2001013480A1 (en) 1999-08-13 2001-02-22 Wisconsin Alumni Research Foundation Single mode, single lobe surface emitting distributed feedback semiconductor laser
US6477194B1 (en) * 1999-11-15 2002-11-05 Agere Systems Guardian Corp. Low temperature distributed feedback laser with loss grating and method
JP2002252420A (ja) * 2000-12-15 2002-09-06 Furukawa Electric Co Ltd:The 半導体レーザ素子、半導体レーザモジュールおよびその製造方法ならびに光ファイバ増幅器
US6696311B2 (en) * 2001-05-03 2004-02-24 Spectra-Physics Semicond. Lasers, In Increasing the yield of precise wavelength lasers
KR100388485B1 (ko) * 2001-05-31 2003-06-25 한국전자통신연구원 다파장 단일모드 레이저 어레이 및 그 제조 방법
DE10132231C2 (de) 2001-06-29 2003-08-14 Infineon Technologies Ag Verfahren zur in-situ Herstellung von DFB-Lasern
EP1283571B1 (de) 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser mit schwach gekoppeltem Gitterbereich
CA2473396C (en) * 2002-01-18 2009-06-23 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
US7457340B2 (en) * 2002-01-18 2008-11-25 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
US7180930B2 (en) * 2002-06-20 2007-02-20 The Furukawa Electric Co., Ltd. DFB semiconductor laser device having ununiform arrangement of a diffraction grating
US6845115B2 (en) * 2002-12-05 2005-01-18 Agilent Technologies, Inc. Coupled resonant cavity surface-emitting laser
KR100674836B1 (ko) * 2005-02-28 2007-01-26 삼성전기주식회사 고출력 단일모드 반도체 레이저소자 및 그 제조방법
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
US7408966B2 (en) * 2006-08-18 2008-08-05 Wisconsin Alumni Research Foundation Intersubband quantum box stack lasers
US20080112670A1 (en) * 2006-11-15 2008-05-15 David Brooks Wavelength filter
DE102016014938B4 (de) * 2016-12-14 2019-06-27 Forschungsverbund Berlin E.V. Lichtemittervorrichtung, basierend auf einem photonischen Kristall mit säulen- oder wandförmigen Halbleiterelementen, und Verfahren zu deren Betrieb und Herstellung
WO2020229928A1 (en) * 2019-05-16 2020-11-19 National Research Council Of Canada Synthesized aperiodic gratings and method of manufacture

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096446A (en) * 1976-02-02 1978-06-20 Bell Telephone Laboratories, Incorporated Distributed feedback devices with perturbations deviating from uniformity for removing mode degeneracy
US4775980A (en) * 1983-12-14 1988-10-04 Hitachi, Ltd. Distributed-feedback semiconductor laser device
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
JPS61255085A (ja) * 1985-05-08 1986-11-12 Mitsubishi Electric Corp 半導体レ−ザ装置
GB2209408B (en) * 1987-09-04 1991-08-21 Plessey Co Plc Optical waveguide device having surface relief diffraction grating

Also Published As

Publication number Publication date
JP2984365B2 (ja) 1999-11-29
IE901188L (en) 1990-09-30
WO1990012436A1 (en) 1990-10-18
EP0390614A1 (de) 1990-10-03
CA2049356A1 (en) 1990-10-01
GB8907304D0 (en) 1989-05-17
CA2049356C (en) 1997-11-18
HK142496A (en) 1996-08-09
AU643684B2 (en) 1993-11-25
KR100236313B1 (ko) 1999-12-15
IE70326B1 (en) 1996-11-13
KR920702053A (ko) 1992-08-12
US5329542A (en) 1994-07-12
JPH04505687A (ja) 1992-10-01
ES2076306T3 (es) 1995-11-01
DE69024064T2 (de) 1996-04-11
EP0390614B1 (de) 1995-09-06
AU5342590A (en) 1990-11-05
DE69024064D1 (de) 1996-01-18

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