ATE121854T1 - Verfahren zur bildung von fotowiderständen durchpolymerisation zweifach ungesättigter monomere. - Google Patents

Verfahren zur bildung von fotowiderständen durchpolymerisation zweifach ungesättigter monomere.

Info

Publication number
ATE121854T1
ATE121854T1 AT90306514T AT90306514T ATE121854T1 AT E121854 T1 ATE121854 T1 AT E121854T1 AT 90306514 T AT90306514 T AT 90306514T AT 90306514 T AT90306514 T AT 90306514T AT E121854 T1 ATE121854 T1 AT E121854T1
Authority
AT
Austria
Prior art keywords
photoresistors
forming
unsaturated monomers
cyanopenta
dienoate
Prior art date
Application number
AT90306514T
Other languages
English (en)
Inventor
John Woods
John Guthrie
Pauline Coakley
Original Assignee
Loctite Ireland Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Loctite Ireland Ltd filed Critical Loctite Ireland Ltd
Application granted granted Critical
Publication of ATE121854T1 publication Critical patent/ATE121854T1/de

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/167Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
AT90306514T 1989-06-23 1990-06-14 Verfahren zur bildung von fotowiderständen durchpolymerisation zweifach ungesättigter monomere. ATE121854T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IE204489A IE892044A1 (en) 1989-06-23 1989-06-23 Photoresists formed by polymerisation of di-unsaturated¹monomers

Publications (1)

Publication Number Publication Date
ATE121854T1 true ATE121854T1 (de) 1995-05-15

Family

ID=11032474

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90306514T ATE121854T1 (de) 1989-06-23 1990-06-14 Verfahren zur bildung von fotowiderständen durchpolymerisation zweifach ungesättigter monomere.

Country Status (8)

Country Link
US (1) US5187048A (de)
EP (1) EP0404446B1 (de)
JP (1) JP2863276B2 (de)
KR (1) KR910001464A (de)
AT (1) ATE121854T1 (de)
CA (1) CA2019666A1 (de)
DE (1) DE69018883T2 (de)
IE (1) IE892044A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2019669A1 (en) * 1989-11-21 1991-05-21 John Woods Anionically polymerizable monomers, polymers thereof, and use of such polymers in photoresists
US5386047A (en) * 1994-03-11 1995-01-31 Loctite Corporation Di-α-cyanopentadienoate disiloxane compounds for use in adhesives
US6291544B1 (en) * 1997-08-15 2001-09-18 Chemence, Inc. Reactive esters of 2-cyanopenta-2,4-dienoic acid and the adhesives and polymers thereof
EP1266264A1 (de) * 1999-11-30 2002-12-18 Brewer Science, Inc. Nicht-aromatische chromophoren zur verwendung in polymerischen antireflexionsbeschichtungen
US6749986B2 (en) * 2000-09-08 2004-06-15 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
JP2004148807A (ja) * 2002-10-09 2004-05-27 Fuji Photo Film Co Ltd インクジェット記録方法
JP4899770B2 (ja) 2006-10-11 2012-03-21 ソニー株式会社 ヘッドホン装置
US10018920B2 (en) * 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1222076C2 (de) * 1962-02-03 1976-01-15 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von diepoxiden
US3554990A (en) * 1968-06-10 1971-01-12 Eastman Kodak Co Esters of 2-cyanopenta-2,4-dienoic acid and polymers thereof
FR2041411A5 (de) * 1969-04-23 1971-01-29 Eastman Kodak Co
US4081276A (en) * 1976-10-18 1978-03-28 General Electric Company Photographic method
DE3036615A1 (de) * 1980-09-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von resiststrukturen
US4348473A (en) * 1981-03-04 1982-09-07 Xerox Corporation Dry process for the production of microelectronic devices
US4425471A (en) * 1981-04-23 1984-01-10 Minnesota Mining & Manufacturing Company Novel cyanoacrylate adhesive compositions and methods of bonding
EP0090089B1 (de) * 1981-12-19 1988-10-05 Daikin Kogyo Co., Ltd. Resistmaterial und Verfahren zur Herstellung eines feinen Resistmusters
JPS58108213A (ja) * 1981-12-22 1983-06-28 Toagosei Chem Ind Co Ltd 2−シアノアクリル酸エステル重合体の製造方法
JPS58123727A (ja) * 1982-01-18 1983-07-23 Fujitsu Ltd 半導体装置の製造方法
US4460436A (en) * 1983-09-06 1984-07-17 International Business Machines Corporation Deposition of polymer films by means of ion beams
EP0161256B1 (de) * 1983-11-02 1988-01-13 Hughes Aircraft Company Pfropfpolymerisierte sio2 lithographische masken
US4675270A (en) * 1986-02-10 1987-06-23 Loctite (Ireland) Limited Imaging method for vapor deposited photoresists of anionically polymerizable monomer
US4743528A (en) * 1986-11-21 1988-05-10 Eastman Kodak Company Enhanced imaging composition containing an azinium activator

Also Published As

Publication number Publication date
JPH0342662A (ja) 1991-02-22
DE69018883T2 (de) 1995-12-21
EP0404446B1 (de) 1995-04-26
CA2019666A1 (en) 1990-12-23
US5187048A (en) 1993-02-16
JP2863276B2 (ja) 1999-03-03
EP0404446A2 (de) 1990-12-27
DE69018883D1 (de) 1995-06-01
EP0404446A3 (de) 1992-01-29
IE892044A1 (en) 1991-01-02
KR910001464A (ko) 1991-01-30

Similar Documents

Publication Publication Date Title
ATE170534T1 (de) Polymerisationsverfahren
ATE2099T1 (de) Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern.
ATE54210T1 (de) Photoempfindliche aufzeichnungsmaterialien mit elastomeren pfropfcopolymerisat-bindemitteln sowie reliefformen daraus.
ATE121854T1 (de) Verfahren zur bildung von fotowiderständen durchpolymerisation zweifach ungesättigter monomere.
HK1005457A1 (en) Anionically polymerizable monomers polymers thereof and use of such polymers in photoresists
FI871664A (fi) Dispersionspolymerer, foerfarande foer deras framstaellning och deras anvaendning.
BR8401839A (pt) Copolimero reticulado,processo para sua preparacao e suas aplicacoes
DE69319686D1 (de) Antiseptisches Polymer
DE59202049D1 (de) Lagerstabile Lösung eines carboxylgruppenhaltigen Copolymerisats sowie Verfahren zur Herstellung von photoempfindlichen Lacken und Offsetdruckplatten.
DE3784730D1 (de) Weiche kontaktlinse und verfahren zu deren herstellung.
DE69411094D1 (de) Organometallische Komplexe von Lanthaniden und deren Verwendung zur Polymerisation von ungesättigten Monomeren
EP0196571B1 (de) Lichtempfindliche Zusammensetzung
US4273856A (en) Positive resist terpolymer composition and method of forming resist pattern
ATE173477T1 (de) Neue halogenierte komplexe von lanthaniden und deren verwendung für die polymerisation von ungesättigten monomeren
ATE126366T1 (de) Gasphasen-aufgebrachte photolacke aus anionisch polymerisierbaren monomeren.
US3852256A (en) Photopolymers
IL31101A (en) Lithographic board and method of preparation
BE841585A (fr) Procede pour inhiber la polymerisation d'acide acrylique
DE2122036A1 (de) Lichtempfindliche filmbildende Polymere
DE59307614D1 (de) Verwendung eines giessharzes und verfahren zu dessen herstellung
JPS57116338A (en) Far ultraviolet negative type resist material and formation of resist pattern using said material

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties