JPS57116338A - Far ultraviolet negative type resist material and formation of resist pattern using said material - Google Patents

Far ultraviolet negative type resist material and formation of resist pattern using said material

Info

Publication number
JPS57116338A
JPS57116338A JP56002170A JP217081A JPS57116338A JP S57116338 A JPS57116338 A JP S57116338A JP 56002170 A JP56002170 A JP 56002170A JP 217081 A JP217081 A JP 217081A JP S57116338 A JPS57116338 A JP S57116338A
Authority
JP
Japan
Prior art keywords
far ultraviolet
film
resist
ultraviolet rays
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56002170A
Other languages
Japanese (ja)
Inventor
Takaharu Kawazu
Mitsumasa Kunishi
Yoshio Yamashita
Seigo Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56002170A priority Critical patent/JPS57116338A/en
Publication of JPS57116338A publication Critical patent/JPS57116338A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Abstract

PURPOSE:To obtain a resist pattern high in resolution with high sensitivity, by forming a film consisting of a specified polymer on a substrate, irradiating this film with far ultraviolet rays, and developing it. CONSTITUTION:A negative type resist material using far ultraviolet rays consisting of a polymer, for example, poly sec. butyl chloroacrylate having repeating units represented by the formula is dissolved in a solvent to prepare a resist solution, which is coated on a substrate, and dried to form a film. This film is exposed to far ultraviolet rays having a specified pattern, and developed with a developing solvent consisting of methyl ethyl ketone and isopropyl alcohol. This resist material has about 50 times sensitivity of polymethyl methacrylate, and forms a high-contrast pattern, permittng high-resolution fine submicron working to be executed in a short exposure time.
JP56002170A 1981-01-12 1981-01-12 Far ultraviolet negative type resist material and formation of resist pattern using said material Pending JPS57116338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56002170A JPS57116338A (en) 1981-01-12 1981-01-12 Far ultraviolet negative type resist material and formation of resist pattern using said material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56002170A JPS57116338A (en) 1981-01-12 1981-01-12 Far ultraviolet negative type resist material and formation of resist pattern using said material

Publications (1)

Publication Number Publication Date
JPS57116338A true JPS57116338A (en) 1982-07-20

Family

ID=11521882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56002170A Pending JPS57116338A (en) 1981-01-12 1981-01-12 Far ultraviolet negative type resist material and formation of resist pattern using said material

Country Status (1)

Country Link
JP (1) JPS57116338A (en)

Similar Documents

Publication Publication Date Title
DE954127C (en) Process for making photosensitive plates and printing plates from them
GB1242193A (en) Photohardenable element with integral pigmented layer
JPS6433546A (en) Photoresist composition and photoresist device
EP0361907A3 (en) Photoresist compositions for deep uv image reversal
GB1514109A (en) Method of making resist mask on a substrate
JPS5692536A (en) Pattern formation method
JPS56162744A (en) Formation of fine pattern
CA1172085A (en) Imaging process and article employing photolabile, blocked surfactant
GB1548764A (en) Photosensitive compositions
EP0152114A3 (en) Method for making a dry planographic printing plate
JPS5595324A (en) Manufacturing method of semiconductor device
JPS57116338A (en) Far ultraviolet negative type resist material and formation of resist pattern using said material
JPS57204033A (en) Formation of fine pattern
JPS55156941A (en) Micropattern forming method
JPS5515149A (en) Forming method of resist for microfabrication
JPS5754905A (en) Manufacture of color filter
JPS5625734A (en) Photosensitive resin fixing method
JPS5580323A (en) Pattern forming method for photoresist-film
JPS5277671A (en) Method and equipment of masking
JPS54141573A (en) Mask for exposure
JPS578541A (en) Positive type resist material
EP0359342A3 (en) Process for forming a layer of patterned photoresist
JPS55134847A (en) Manufacture of resist image
JPS55163841A (en) Method for electron beam exposure
JPS55124147A (en) Manufacture of photosensitive printing plate