JPS57116338A - Far ultraviolet negative type resist material and formation of resist pattern using said material - Google Patents
Far ultraviolet negative type resist material and formation of resist pattern using said materialInfo
- Publication number
- JPS57116338A JPS57116338A JP56002170A JP217081A JPS57116338A JP S57116338 A JPS57116338 A JP S57116338A JP 56002170 A JP56002170 A JP 56002170A JP 217081 A JP217081 A JP 217081A JP S57116338 A JPS57116338 A JP S57116338A
- Authority
- JP
- Japan
- Prior art keywords
- far ultraviolet
- film
- resist
- ultraviolet rays
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Abstract
PURPOSE:To obtain a resist pattern high in resolution with high sensitivity, by forming a film consisting of a specified polymer on a substrate, irradiating this film with far ultraviolet rays, and developing it. CONSTITUTION:A negative type resist material using far ultraviolet rays consisting of a polymer, for example, poly sec. butyl chloroacrylate having repeating units represented by the formula is dissolved in a solvent to prepare a resist solution, which is coated on a substrate, and dried to form a film. This film is exposed to far ultraviolet rays having a specified pattern, and developed with a developing solvent consisting of methyl ethyl ketone and isopropyl alcohol. This resist material has about 50 times sensitivity of polymethyl methacrylate, and forms a high-contrast pattern, permittng high-resolution fine submicron working to be executed in a short exposure time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56002170A JPS57116338A (en) | 1981-01-12 | 1981-01-12 | Far ultraviolet negative type resist material and formation of resist pattern using said material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56002170A JPS57116338A (en) | 1981-01-12 | 1981-01-12 | Far ultraviolet negative type resist material and formation of resist pattern using said material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57116338A true JPS57116338A (en) | 1982-07-20 |
Family
ID=11521882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56002170A Pending JPS57116338A (en) | 1981-01-12 | 1981-01-12 | Far ultraviolet negative type resist material and formation of resist pattern using said material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57116338A (en) |
-
1981
- 1981-01-12 JP JP56002170A patent/JPS57116338A/en active Pending
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