ATE119953T1 - Verfahren und effusionszelle zur erzeugung von molekularstrahlen. - Google Patents

Verfahren und effusionszelle zur erzeugung von molekularstrahlen.

Info

Publication number
ATE119953T1
ATE119953T1 AT92402130T AT92402130T ATE119953T1 AT E119953 T1 ATE119953 T1 AT E119953T1 AT 92402130 T AT92402130 T AT 92402130T AT 92402130 T AT92402130 T AT 92402130T AT E119953 T1 ATE119953 T1 AT E119953T1
Authority
AT
Austria
Prior art keywords
flow rate
sublimation
effusion cell
molecular beams
generating molecular
Prior art date
Application number
AT92402130T
Other languages
English (en)
Inventor
Leon Goldstein
Rene Vergnaud
Jean-Pierre Chardon
Original Assignee
Alsthom Cge Alcatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Cge Alcatel filed Critical Alsthom Cge Alcatel
Application granted granted Critical
Publication of ATE119953T1 publication Critical patent/ATE119953T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
AT92402130T 1991-08-01 1992-07-23 Verfahren und effusionszelle zur erzeugung von molekularstrahlen. ATE119953T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9109812A FR2679929B1 (fr) 1991-08-01 1991-08-01 Procede et cellule d'effusion pour la formation de jets moleculaires.

Publications (1)

Publication Number Publication Date
ATE119953T1 true ATE119953T1 (de) 1995-04-15

Family

ID=9415830

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92402130T ATE119953T1 (de) 1991-08-01 1992-07-23 Verfahren und effusionszelle zur erzeugung von molekularstrahlen.

Country Status (8)

Country Link
US (1) US5321260A (de)
EP (1) EP0526312B1 (de)
JP (1) JP3124775B2 (de)
AT (1) ATE119953T1 (de)
DE (1) DE69201695T2 (de)
ES (1) ES2070607T3 (de)
FR (1) FR2679929B1 (de)
WO (1) WO1993003209A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08167575A (ja) * 1994-10-14 1996-06-25 Mitsubishi Electric Corp Ｍｂｅ結晶成長装置，及びｍｂｅ結晶成長方法
US6030458A (en) * 1997-02-14 2000-02-29 Chorus Corporation Phosphorus effusion source
US6447734B1 (en) 1999-02-02 2002-09-10 The University Of Utah Research Foundation Vaporization and cracker cell apparatus
FR2823228B1 (fr) * 2001-04-04 2003-06-13 Addon Reservoir pour installation d'epitaxie et installation comprenant un tel reservoir
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
DE10256038A1 (de) * 2002-11-30 2004-06-17 Applied Films Gmbh & Co. Kg Bedampfungsvorrichtung
US7502229B2 (en) * 2004-10-15 2009-03-10 Alcatel Lucent Heat dissipation system for multiple integrated circuits mounted on a printed circuit board

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE55678C (de) * 1973-01-11 W. LeFELDT & LENTSCH in Schöningen Neuerung an Dampfmaschinen
US4330360A (en) * 1980-07-21 1982-05-18 Bell Telephone Laboratories, Incorporated Molecular beam deposition technique using gaseous sources of group V elements
FR2572099B1 (fr) * 1984-10-24 1987-03-20 Comp Generale Electricite Generateur de jets moleculaires par craquage thermique pour la fabrication de semi-conducteurs par depot epitaxial
JPS61280610A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 分子線エピタキシヤル成長装置
FR2598721B1 (fr) * 1986-05-15 1988-09-30 Commissariat Energie Atomique Cellule pour epitaxie par jets moleculaires et procede associe
US5025751A (en) * 1988-02-08 1991-06-25 Hitachi, Ltd. Solid film growth apparatus
US5034604A (en) * 1989-08-29 1991-07-23 Board Of Regents, The University Of Texas System Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction
JPH0633231B2 (ja) * 1990-01-12 1994-05-02 松下電器産業株式会社 分子線エピタキシャル成長方法
IT1240199B (it) * 1990-04-19 1993-11-27 Cselt Centro Studi Lab Telecom Effusore di vapori per impianti di deposizione epitassiale.

Also Published As

Publication number Publication date
WO1993003209A1 (fr) 1993-02-18
EP0526312B1 (de) 1995-03-15
DE69201695T2 (de) 1995-08-17
JP3124775B2 (ja) 2001-01-15
DE69201695D1 (de) 1995-04-20
JPH06502745A (ja) 1994-03-24
FR2679929A1 (fr) 1993-02-05
US5321260A (en) 1994-06-14
FR2679929B1 (fr) 1993-10-22
ES2070607T3 (es) 1995-06-01
EP0526312A1 (de) 1993-02-03

Similar Documents

Publication Publication Date Title
ATE105396T1 (de) Verfahren zur verbrennungsluftzufuehrung und feuerungsanlage.
GB2080271B (en) Molecular beam deposition using gaseous source of group v element
ATE119953T1 (de) Verfahren und effusionszelle zur erzeugung von molekularstrahlen.
DE68922149T2 (de) Verfahren und Einrichtung zur aktiven Kontrolle von Verbrennungsinstabilitäten.
GB1266444A (de)
JP3126787B2 (ja) 成膜方法および成膜装置
US4726320A (en) Laser CVD device
DE3779137D1 (de) Verfahren und vorrichtung zum steuern der mischung von gasstroemungen in einer wirbelschicht-verbrennungskammer.
ATE125346T1 (de) Verfahren zur stabilisierung eines verbrennungsvorganges.
DE69009225T2 (de) Verfahren zur Herstellung von Bornitrid.
JPS56164523A (en) Vapor phase growth of semiconductor
DE69307816D1 (de) Atmospherischer Gasbrenner zur Verbrennung mit niedrigem Stickoxiden- und Kohlenoxiden-Gehalt
SE8703895D0 (sv) Sett och apparat for att av kol och kiseldioxid kontinuerligt framstella flytande kisel
JPS5713746A (en) Vapor-phase growing apparatus
ATE23220T1 (de) Vorrichtung zur impulsweisen einbringung eines gasfoermigen mediums in einem brennofen oder dgl.
JPS6439718A (en) Manufacture of thin film
JPS6439719A (en) Epitaxial growth
KR970012994A (ko) 반도체장치
ATE156779T1 (de) Verfahren und vorrichtung zur herstellung von fullerenen
JPS57117233A (en) Growing method for semiconductor in gaseous phase
JPS55113694A (en) Single crystal growing device
JPS5727999A (en) Vapor phase growing method for gan
JPS6468474A (en) Formation of film
JPS5626800A (en) Vapor phase epitaxial growing method
JPS6423523A (en) Semiconductor growth equipment

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee