JPS6423523A - Semiconductor growth equipment - Google Patents

Abstract

PURPOSE:To realize a uniform distribution of the epitaxial growth during a molecular beam epitaxial growth operation using a raw gas by a method wherein a state of the gas inside a gas introduction tube is made a viscous flow. CONSTITUTION:A gallium arsenide substrate 5 inside a growth chamber 6 is situated to be face to face with a gas introduction tube 1 made of quartz and is cooled by a nitrogen shroud 7. Trimethylgallium 8 as a raw has is contained in a bubbler 9, is gasified and evaporated by high-purity hydrogen, passes through the gas introduction tube 1, passes through an opening 2 and is fed to the growth chamber 6. A flow rate of arsine as a group V raw material is controlled by using a massflow controller 10; arsine passes through the introduction tube 1 in the same manner and is fed to the growth chamber 6. If the inside of the gas introduction tube 1 is constituted in such a way that a state of a viscous flow can be kept, a radiating direction of raw molecules discharged from the gas introduction tube is decided by a collision of the raw molecules with one another or by the collision with a carrier gas; an influence due to the collision with a wall inside the gas introduction tube is reduced. Accordingly, a distribution such as costheta of the radiating direction of the discharged raw molecules is obtained irrespective of a structure of the gas introduction tube; a uniform epitaxial growth operation can be executed; the controllability of a thin film can be enhanced.