ATE113932T1 - Sinterkörper aus zinkoxid und seine herstellung. - Google Patents

Sinterkörper aus zinkoxid und seine herstellung.

Info

Publication number
ATE113932T1
ATE113932T1 AT89308069T AT89308069T ATE113932T1 AT E113932 T1 ATE113932 T1 AT E113932T1 AT 89308069 T AT89308069 T AT 89308069T AT 89308069 T AT89308069 T AT 89308069T AT E113932 T1 ATE113932 T1 AT E113932T1
Authority
AT
Austria
Prior art keywords
zinc oxide
sintered body
oxide sintered
manufacture
valency
Prior art date
Application number
AT89308069T
Other languages
English (en)
Inventor
Nobuhiro Ogawa
Ichiro Harada
Takashi Mori
Hironori Baba
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Application granted granted Critical
Publication of ATE113932T1 publication Critical patent/ATE113932T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT89308069T 1988-08-09 1989-08-09 Sinterkörper aus zinkoxid und seine herstellung. ATE113932T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19715788 1988-08-09

Publications (1)

Publication Number Publication Date
ATE113932T1 true ATE113932T1 (de) 1994-11-15

Family

ID=16369716

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89308069T ATE113932T1 (de) 1988-08-09 1989-08-09 Sinterkörper aus zinkoxid und seine herstellung.

Country Status (4)

Country Link
EP (1) EP0354769B1 (de)
KR (1) KR950006208B1 (de)
AT (1) ATE113932T1 (de)
DE (1) DE68919299T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4853594A (en) * 1988-08-10 1989-08-01 Rogers Corporation Electroluminescent lamp
JP2707325B2 (ja) * 1989-06-21 1998-01-28 三井金属鉱業株式会社 白色導電性酸化亜鉛の製造方法
JP2840856B2 (ja) * 1989-06-26 1998-12-24 三井金属鉱業株式会社 針状導電性酸化亜鉛及びその製造方法
JPH0688218A (ja) * 1990-11-15 1994-03-29 Tosoh Corp 酸化亜鉛系焼結体及びその製造方法並びに用途
US5171411A (en) * 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
DE10306925A1 (de) * 2003-02-19 2004-09-02 GfE Gesellschaft für Elektrometallurgie mbH PVD-Beschichtungsmaterial
JP5125162B2 (ja) 2007-03-16 2013-01-23 住友化学株式会社 透明導電膜用材料
KR101590429B1 (ko) 2008-07-15 2016-02-01 토소가부시키가이샤 복합 산화물 소결체, 복합 산화물 소결체의 제조방법, 스퍼터링 타겟 및 박막의 제조방법
FR2972440B1 (fr) 2011-03-07 2013-03-29 Commissariat Energie Atomique Procede de formation d'un oxyde metallique dope
WO2013005690A1 (ja) * 2011-07-01 2013-01-10 宇部マテリアルズ株式会社 スパッタリング用MgOターゲット
JP5450906B1 (ja) * 2012-03-30 2014-03-26 Jx日鉱日石金属株式会社 スパッタリングターゲット及びその製造方法
CN108546936B (zh) * 2018-05-09 2020-01-31 武汉理工大学 一种低温制备高性能ZnO基透明导电氧化物薄膜的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0731950B2 (ja) * 1985-11-22 1995-04-10 株式会社リコー 透明導電膜の製造方法
JPS63175304A (ja) * 1987-01-14 1988-07-19 富士通株式会社 透明電極用スパツタタ−ゲツトの製造方法

Also Published As

Publication number Publication date
KR900003064A (ko) 1990-03-23
DE68919299T2 (de) 1995-04-06
DE68919299D1 (de) 1994-12-15
KR950006208B1 (ko) 1995-06-12
EP0354769A3 (de) 1991-11-21
EP0354769A2 (de) 1990-02-14
EP0354769B1 (de) 1994-11-09

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Legal Events

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