KR900003064A - 아연산화물 소결체 및 그의 제조방법과 이용 - Google Patents

아연산화물 소결체 및 그의 제조방법과 이용 Download PDF

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KR900003064A
KR900003064A KR1019890011327A KR890011327A KR900003064A KR 900003064 A KR900003064 A KR 900003064A KR 1019890011327 A KR1019890011327 A KR 1019890011327A KR 890011327 A KR890011327 A KR 890011327A KR 900003064 A KR900003064 A KR 900003064A
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zinc oxide
sintered body
amount
valence
trivalent
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KR950006208B1 (ko
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노부히로 오가와
이찌로오 하라다
다까시 모리
히로노리 바바
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나까다니 하루오
도오소오 가부시끼가이샤
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
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Abstract

내용 없음

Description

아연산화물 소결체 및 그의 제조방법과 이용
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본발명에 따라 1,400℃에서 소결하여 얻은 소결체의 결정입자구조를 나타내는 주사 전자 현미경 사진(2,000배율).
제 2도는 1,100℃에서 소결하여 얻은 소결체를 나타내는 유사한 사진.
제 3도는 실시예4에서 얻은 소결체의 X-선 회절 도표.

Claims (16)

  1. 원자가가 적어도 +3가인 원소를 함유한 아연산화물 소결체에 있어서, 소결밀도가 적어도 5g/㎤이고 비저항이 1Ω·cm보다 작은 것을 특징으로 하는 아연 산화물 소결체.
  2. 제1항에 있어서, 원자가가 적어도 +3가인 원소의 양이 아연의 양율 기준으로하여 0.1 내지 20원자%인 것을 특징으로 하는 아연 산화물 소결체.
  3. 다른 원소로 도핑된 아연 산화물 소결체에 있어서, 소결밀도가 적어도 5g/cm3이고 비저항이 10mΩ·cm보다 작고, 소결체에 함유된 스피넬 구조의 총량이 도펀트로서의 원소의 총량이 스피넬구조를 취할때 얻어지는 스피넬구조(X가 도펀트로 가해지는 원소를 나타낼때 식 ZnX2O4로 나타냄)의 양과같거나 더 적은 것을 특징으로 하는 아연산화물 소결체.
  4. 제3항에 있어서, 원자가가 적어도 +3가인 원소의 양이 아연의 양을 기준으로하여 0.1 내지 20원자%인 것을 특징으로 하는 아연산화물 수결체.
  5. 소결밀도가 적어도 5g/cm3이고 비저항이 1Ω·cm보다 작은 아연 산화물 소결체의 제조 방법에 있어서, 원자가가 적어도 +3가인 원자기를 가진 원소를 함유한 아연 산화물을 1,300℃보다 높은 온도에서 소결하는 것으로 이루어지는 것을 특징으로 하는 방법.
  6. 제5항에 있어서, 원자가가 적어도 +3가인 원소의 양이 아연의 양을 기준으로하여 0.1 내지 20원자%인 것을 특징으로 하는 방법.
  7. 제5항에 있어서, 원자가가 적어도 +3가인 원자가를 가진 원소를 함유한 아연 산화물이 주요한 입자 직경이 1㎛보다 크지 않고 비표면적이 적어도 2m2/g인 매우 분산이 잘되는 분말 형태인 것을 특징으로 하는 방법.
  8. 제5항에 있어서, 소결이 1,300℃보다는 높지만, 1,700℃보다는 높지 않은 온도에서 행해지는 것을 특징으로 하는 방법.
  9. 제5항에 있어서, 소결이 1,400℃ 내지 1,600℃의 온도에서 행해지는 것을 특징으로 하는 방법.
  10. 저-저항 아연 산화물 소결체의 제조 방법에 있어서, X가 원자가가 적어도 +3가인 원자가를 가진 원소를 나타내는 식ZnX2O4로 나타내는 스피넬 구조 산화물을 아연 산화물과 혼합하고, 그 혼합물을 1,300℃보다 높은 온도에서 소결하는 것으로 이루어지는 것을 특징으로 하는 방법.
  11. 제10항에 있어서, 원자가가 적어도 +3가인 양이 아연의 양을 기준으로 하여 0.1 내지 20원자%인 것을 특징으로 하는 방법.
  12. 제10항에 있어서, 식ZnX2O4의 스피넬 구조 산화물이 500 내지 1000℃의 온도로 열처리하여 제조되는 것을 특징으로 하는 방법.
  13. 제10항에 있어서, 소결이 1,300℃보다는 높으나, 1,700℃보다는 높지 않은 온도에서 행해지는 것을 특징으로 하는 방법.
  14. 제10항에 있어서, 소결이 1,400℃ 내지 1,600℃의 온도에서 행해지는 것을 특징으로 하는 방법.
  15. 제1항에 있어서 설명한 것과 같은 소결체로 이루어지는 스패터링 타아겟.
  16. 제3항에 있어서 설명한 것과 같은 소결체로 이루어지는 스패터링 타아겟.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890011327A 1988-08-09 1989-08-09 아연산화물 소결체 및 그의 제조방법과 이용 KR950006208B1 (ko)

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US4853594A (en) * 1988-08-10 1989-08-01 Rogers Corporation Electroluminescent lamp
JP2707325B2 (ja) * 1989-06-21 1998-01-28 三井金属鉱業株式会社 白色導電性酸化亜鉛の製造方法
JP2840856B2 (ja) * 1989-06-26 1998-12-24 三井金属鉱業株式会社 針状導電性酸化亜鉛及びその製造方法
JPH0688218A (ja) * 1990-11-15 1994-03-29 Tosoh Corp 酸化亜鉛系焼結体及びその製造方法並びに用途
US5171411A (en) * 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
DE10306925A1 (de) * 2003-02-19 2004-09-02 GfE Gesellschaft für Elektrometallurgie mbH PVD-Beschichtungsmaterial
JP5125162B2 (ja) 2007-03-16 2013-01-23 住友化学株式会社 透明導電膜用材料
CN102089257B (zh) 2008-07-15 2016-03-30 东曹株式会社 复合氧化物烧结体、复合氧化物烧结体的制造方法、溅射靶及薄膜的制造方法
FR2972440B1 (fr) 2011-03-07 2013-03-29 Commissariat Energie Atomique Procede de formation d'un oxyde metallique dope
KR101731847B1 (ko) * 2011-07-01 2017-05-08 우베 마테리알즈 가부시키가이샤 스퍼터링용 MgO 타겟
KR20190065483A (ko) * 2012-03-30 2019-06-11 제이엑스금속주식회사 스퍼터링 타깃 및 그 제조 방법
CN108546936B (zh) * 2018-05-09 2020-01-31 武汉理工大学 一种低温制备高性能ZnO基透明导电氧化物薄膜的方法

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JPH0731950B2 (ja) * 1985-11-22 1995-04-10 株式会社リコー 透明導電膜の製造方法
JPS63175304A (ja) * 1987-01-14 1988-07-19 富士通株式会社 透明電極用スパツタタ−ゲツトの製造方法

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EP0354769B1 (en) 1994-11-09
ATE113932T1 (de) 1994-11-15
EP0354769A3 (en) 1991-11-21
DE68919299D1 (de) 1994-12-15
KR950006208B1 (ko) 1995-06-12
DE68919299T2 (de) 1995-04-06
EP0354769A2 (en) 1990-02-14

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