AT376844B - Halbleiterbauteil - Google Patents

Halbleiterbauteil

Info

Publication number
AT376844B
AT376844B AT1083973A AT1083973A AT376844B AT 376844 B AT376844 B AT 376844B AT 1083973 A AT1083973 A AT 1083973A AT 1083973 A AT1083973 A AT 1083973A AT 376844 B AT376844 B AT 376844B
Authority
AT
Austria
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
AT1083973A
Other languages
German (de)
English (en)
Other versions
ATA1083973A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA1083973A publication Critical patent/ATA1083973A/de
Application granted granted Critical
Publication of AT376844B publication Critical patent/AT376844B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
AT1083973A 1972-12-29 1973-12-27 Halbleiterbauteil AT376844B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000550A JPS5147583B2 (en, 2012) 1972-12-29 1972-12-29

Publications (2)

Publication Number Publication Date
ATA1083973A ATA1083973A (de) 1984-05-15
AT376844B true AT376844B (de) 1985-01-10

Family

ID=11476818

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1083973A AT376844B (de) 1972-12-29 1973-12-27 Halbleiterbauteil

Country Status (15)

Country Link
JP (1) JPS5147583B2 (en, 2012)
AT (1) AT376844B (en, 2012)
BE (1) BE809216A (en, 2012)
BR (1) BR7310275D0 (en, 2012)
CA (1) CA993568A (en, 2012)
CH (1) CH577750A5 (en, 2012)
DE (1) DE2364752A1 (en, 2012)
DK (1) DK140036C (en, 2012)
ES (1) ES421881A1 (en, 2012)
FR (1) FR2212645B1 (en, 2012)
GB (1) GB1460037A (en, 2012)
IT (1) IT1002384B (en, 2012)
NL (1) NL7317815A (en, 2012)
NO (1) NO140844C (en, 2012)
SE (1) SE398940B (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5914897B2 (ja) * 1975-02-08 1984-04-06 ソニー株式会社 半導体装置
JPS5754969B2 (en, 2012) * 1974-04-04 1982-11-20
JPS5753672B2 (en, 2012) * 1974-04-10 1982-11-13
JPS57658B2 (en, 2012) * 1974-04-16 1982-01-07
JPS5714064B2 (en, 2012) * 1974-04-25 1982-03-20
JPS5718710B2 (en, 2012) * 1974-05-10 1982-04-17
JPS5648983B2 (en, 2012) * 1974-05-10 1981-11-19
JPS5426789Y2 (en, 2012) * 1974-07-23 1979-09-03
IT1061510B (it) * 1975-06-30 1983-04-30 Rca Corp Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso
US4178190A (en) 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
JPS52100978A (en) * 1976-02-20 1977-08-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822310A (en) * 1955-04-21 1958-02-04 Philips Corp Semi-conductor device
DE1221363B (de) * 1964-04-25 1966-07-21 Telefunken Patent Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen
DE1278023B (de) * 1964-02-20 1968-09-19 Westinghouse Electric Corp Halbleiterschaltelement und Verfahren zu seiner Herstellung
DE1297237B (de) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Flaechentransistor und Verfahren zu seiner Herstellung
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
DE1917013A1 (de) * 1968-04-11 1969-10-23 Westinghouse Electric Corp Halbleitervierschichttriode
CH484519A (de) * 1967-08-11 1970-01-15 Westinghouse Electric Corp Steuerbares Halbleiterbauelement
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
DE1614383A1 (de) * 1966-12-01 1970-05-27 Rca Corp Halbleiterbauelement und Verfahren zu seiner Herstellung
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
DE2048737A1 (de) * 1969-11-10 1971-05-13 Ibm Verfahren zur Herstellung integrierter Transistoren
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
DE1764765A1 (de) * 1967-08-03 1971-07-08 Rca Corp Halbleiter-Bauelement
DE2014173B2 (de) * 1969-03-28 1972-04-06 Hitachi, Ltd , Tokio Verfahren zum herstellen einer vielzahl von halbleiteranordnungen, insbesondere leistungstransistoren
DE2060854A1 (de) * 1970-12-10 1972-08-17 Siemens Ag Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung
FR2130399A1 (en, 2012) * 1971-03-20 1972-11-03 Philips Nv
DE2320563A1 (de) * 1972-04-20 1973-10-25 Sony Corp Vierschichttriode

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822310A (en) * 1955-04-21 1958-02-04 Philips Corp Semi-conductor device
DE1278023B (de) * 1964-02-20 1968-09-19 Westinghouse Electric Corp Halbleiterschaltelement und Verfahren zu seiner Herstellung
DE1221363B (de) * 1964-04-25 1966-07-21 Telefunken Patent Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen
DE1297237B (de) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Flaechentransistor und Verfahren zu seiner Herstellung
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
DE1564509A1 (de) * 1965-10-14 1970-03-05 Philco Ford Corp Transistor
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
DE1614383A1 (de) * 1966-12-01 1970-05-27 Rca Corp Halbleiterbauelement und Verfahren zu seiner Herstellung
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
DE1764765A1 (de) * 1967-08-03 1971-07-08 Rca Corp Halbleiter-Bauelement
CH484519A (de) * 1967-08-11 1970-01-15 Westinghouse Electric Corp Steuerbares Halbleiterbauelement
DE1917013A1 (de) * 1968-04-11 1969-10-23 Westinghouse Electric Corp Halbleitervierschichttriode
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
DE2014173B2 (de) * 1969-03-28 1972-04-06 Hitachi, Ltd , Tokio Verfahren zum herstellen einer vielzahl von halbleiteranordnungen, insbesondere leistungstransistoren
DE2048737A1 (de) * 1969-11-10 1971-05-13 Ibm Verfahren zur Herstellung integrierter Transistoren
DE2060854A1 (de) * 1970-12-10 1972-08-17 Siemens Ag Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung
FR2130399A1 (en, 2012) * 1971-03-20 1972-11-03 Philips Nv
DE2320563A1 (de) * 1972-04-20 1973-10-25 Sony Corp Vierschichttriode

Also Published As

Publication number Publication date
DE2364752A1 (de) 1974-08-01
JPS4991191A (en, 2012) 1974-08-30
NO140844C (no) 1979-11-21
FR2212645A1 (en, 2012) 1974-07-26
IT1002384B (it) 1976-05-20
JPS5147583B2 (en, 2012) 1976-12-15
GB1460037A (en) 1976-12-31
BR7310275D0 (pt) 1974-09-24
ES421881A1 (es) 1976-08-01
FR2212645B1 (en, 2012) 1977-08-05
DK140036B (da) 1979-06-05
NL7317815A (en, 2012) 1974-07-02
DK140036C (da) 1979-12-24
CA993568A (en) 1976-07-20
BE809216A (fr) 1974-04-16
CH577750A5 (en, 2012) 1976-07-15
AU6378973A (en) 1975-06-19
NO140844B (no) 1979-08-13
ATA1083973A (de) 1984-05-15
SE398940B (sv) 1978-01-23

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Legal Events

Date Code Title Description
ELA Expired due to lapse of time