SE398940B - Halvledardon - Google Patents

Halvledardon

Info

Publication number
SE398940B
SE398940B SE7317518A SE7317518A SE398940B SE 398940 B SE398940 B SE 398940B SE 7317518 A SE7317518 A SE 7317518A SE 7317518 A SE7317518 A SE 7317518A SE 398940 B SE398940 B SE 398940B
Authority
SE
Sweden
Prior art keywords
leadardon
half leadardon
Prior art date
Application number
SE7317518A
Other languages
English (en)
Swedish (sv)
Inventor
H Yagi
T Tsuyuki
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SE398940B publication Critical patent/SE398940B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
SE7317518A 1972-12-29 1973-12-28 Halvledardon SE398940B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000550A JPS5147583B2 (en, 2012) 1972-12-29 1972-12-29

Publications (1)

Publication Number Publication Date
SE398940B true SE398940B (sv) 1978-01-23

Family

ID=11476818

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7317518A SE398940B (sv) 1972-12-29 1973-12-28 Halvledardon

Country Status (15)

Country Link
JP (1) JPS5147583B2 (en, 2012)
AT (1) AT376844B (en, 2012)
BE (1) BE809216A (en, 2012)
BR (1) BR7310275D0 (en, 2012)
CA (1) CA993568A (en, 2012)
CH (1) CH577750A5 (en, 2012)
DE (1) DE2364752A1 (en, 2012)
DK (1) DK140036C (en, 2012)
ES (1) ES421881A1 (en, 2012)
FR (1) FR2212645B1 (en, 2012)
GB (1) GB1460037A (en, 2012)
IT (1) IT1002384B (en, 2012)
NL (1) NL7317815A (en, 2012)
NO (1) NO140844C (en, 2012)
SE (1) SE398940B (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5914897B2 (ja) * 1975-02-08 1984-04-06 ソニー株式会社 半導体装置
JPS5754969B2 (en, 2012) * 1974-04-04 1982-11-20
JPS5753672B2 (en, 2012) * 1974-04-10 1982-11-13
JPS57658B2 (en, 2012) * 1974-04-16 1982-01-07
JPS5714064B2 (en, 2012) * 1974-04-25 1982-03-20
JPS5718710B2 (en, 2012) * 1974-05-10 1982-04-17
JPS5648983B2 (en, 2012) * 1974-05-10 1981-11-19
JPS5426789Y2 (en, 2012) * 1974-07-23 1979-09-03
IT1061510B (it) * 1975-06-30 1983-04-30 Rca Corp Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso
US4178190A (en) 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
JPS52100978A (en) * 1976-02-20 1977-08-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE547227A (en, 2012) * 1955-04-21
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
DE1221363B (de) * 1964-04-25 1966-07-21 Telefunken Patent Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen
DE1297237B (de) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Flaechentransistor und Verfahren zu seiner Herstellung
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
FR1574577A (en, 2012) * 1967-08-03 1969-07-11
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
JPS4840667B1 (en, 2012) * 1969-03-28 1973-12-01
US3717515A (en) * 1969-11-10 1973-02-20 Ibm Process for fabricating a pedestal transistor
DE2060854A1 (de) * 1970-12-10 1972-08-17 Siemens Ag Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung
DE2211384A1 (de) * 1971-03-20 1972-11-30 Philips Nv Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung
JPS493583A (en, 2012) * 1972-04-20 1974-01-12

Also Published As

Publication number Publication date
DE2364752A1 (de) 1974-08-01
JPS4991191A (en, 2012) 1974-08-30
NO140844C (no) 1979-11-21
FR2212645A1 (en, 2012) 1974-07-26
AT376844B (de) 1985-01-10
IT1002384B (it) 1976-05-20
JPS5147583B2 (en, 2012) 1976-12-15
GB1460037A (en) 1976-12-31
BR7310275D0 (pt) 1974-09-24
ES421881A1 (es) 1976-08-01
FR2212645B1 (en, 2012) 1977-08-05
DK140036B (da) 1979-06-05
NL7317815A (en, 2012) 1974-07-02
DK140036C (da) 1979-12-24
CA993568A (en) 1976-07-20
BE809216A (fr) 1974-04-16
CH577750A5 (en, 2012) 1976-07-15
AU6378973A (en) 1975-06-19
NO140844B (no) 1979-08-13
ATA1083973A (de) 1984-05-15

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