AT294919B - Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht - Google Patents

Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht

Info

Publication number
AT294919B
AT294919B AT571969A AT571969A AT294919B AT 294919 B AT294919 B AT 294919B AT 571969 A AT571969 A AT 571969A AT 571969 A AT571969 A AT 571969A AT 294919 B AT294919 B AT 294919B
Authority
AT
Austria
Prior art keywords
intermediate layer
semiconductor thin
spinel type
insulating intermediate
producing semiconductor
Prior art date
Application number
AT571969A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769627 external-priority patent/DE1769627C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT294919B publication Critical patent/AT294919B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/018—Manufacture or treatment of isolation regions comprising dielectric materials using selective deposition of crystalline silicon, e.g. using epitaxial growth of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Weting (AREA)
AT571969A 1968-06-19 1969-06-17 Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht AT294919B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769627 DE1769627C3 (de) 1968-06-19 Verfahren zum Herstellen von mehrschichtigem, durch mindestens eine Isolierschicht getrenntem Halbleitermaterial

Publications (1)

Publication Number Publication Date
AT294919B true AT294919B (de) 1971-12-10

Family

ID=5700213

Family Applications (1)

Application Number Title Priority Date Filing Date
AT571969A AT294919B (de) 1968-06-19 1969-06-17 Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht

Country Status (8)

Country Link
US (1) US3655439A (enFirst)
JP (1) JPS4923621B1 (enFirst)
AT (1) AT294919B (enFirst)
CH (1) CH501315A (enFirst)
FR (1) FR1597033A (enFirst)
GB (1) GB1222923A (enFirst)
NL (1) NL6909050A (enFirst)
SE (1) SE344384B (enFirst)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
US3956034A (en) * 1973-07-19 1976-05-11 Harris Corporation Isolated photodiode array
JPS5057381A (enFirst) * 1973-09-19 1975-05-19
JPS52120216U (enFirst) * 1976-03-11 1977-09-12
JPS52140541U (enFirst) * 1976-04-19 1977-10-25
JPS5399730U (enFirst) * 1977-01-17 1978-08-12
US4147584A (en) * 1977-12-27 1979-04-03 Burroughs Corporation Method for providing low cost wafers for use as substrates for integrated circuits
JPS5587424A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Semiconductor device
JPS55138229A (en) * 1979-04-13 1980-10-28 Hitachi Ltd Manufacture of dielectric material for insulation- separation substrate
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
EP0030286B1 (de) * 1979-11-23 1987-09-09 Alcatel N.V. Dielektrisch isoliertes Halbleiterbauelement und Verfahren zur Herstellung
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
JPS57169246A (en) * 1981-04-10 1982-10-18 Nec Corp Dielectric epitaxial film material
JPS57211267A (en) * 1981-06-22 1982-12-25 Toshiba Corp Semiconductor device and manufacture thereof
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
JPS60202952A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 半導体装置の製造方法
US5264072A (en) * 1985-12-04 1993-11-23 Fujitsu Limited Method for recrystallizing conductive films by an indirect-heating with a thermal-conduction-controlling layer
US5363799A (en) * 1987-08-08 1994-11-15 Canon Kabushiki Kaisha Method for growth of crystal
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
DE19802131B4 (de) * 1998-01-21 2007-03-15 Robert Bosch Gmbh Verfahren zur Herstellung einer monokristallinen Schicht aus einem leitenden oder halbleitenden Material
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683877B1 (ko) * 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US6844084B2 (en) 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US20090283092A1 (en) * 2008-05-13 2009-11-19 Mel Marrone Firelog Pan

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972555A (en) * 1958-11-07 1961-02-21 Union Carbide Corp Gas plating of alumina
US3399072A (en) * 1963-03-04 1968-08-27 North American Rockwell Magnetic materials
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
DE1544261C3 (de) * 1965-03-30 1975-12-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials
US3414434A (en) * 1965-06-30 1968-12-03 North American Rockwell Single crystal silicon on spinel insulators

Also Published As

Publication number Publication date
SE344384B (enFirst) 1972-04-10
JPS4923621B1 (enFirst) 1974-06-17
DE1769627B2 (de) 1977-03-31
GB1222923A (en) 1971-02-17
US3655439A (en) 1972-04-11
DE1769627A1 (de) 1971-10-21
CH501315A (de) 1970-12-31
NL6909050A (enFirst) 1969-12-23
FR1597033A (enFirst) 1970-06-22

Similar Documents

Publication Publication Date Title
AT294919B (de) Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht
CH463752A (de) Verfahren zum Herstellen einer Verbund-Bauplatte, sowie nach dem Verfahren hergestellte Verbund-Bauplatte
DE1933731B2 (de) Verfahren zum herstellen einer integrierten halbleiterschaltung
AT293025B (de) Verfahren zur Herstellung von Flächengebilden nach dem Isocyanat-Polyadditionsverfahren
CH522955A (de) Verfahren zur Herstellung einer Halbleitervorrichtung sowie nach dem Verfahren hergestellte Halbleitervorrichtung
AT278906B (de) Verfahren zum Herstellen von Halbleiterbauelementen mit Kontakten
CH498493A (de) Verfahren zum Herstellen monolithischer Halbleiteranordnungen
AT312909B (de) Vorrichtung zur Herstellung von wenigstens teilweise mit einer Hülle versehenen Dichtungsstreifen
ATA996171A (de) Verfahren zum herstellen einer halbleiteranordnung mit einem halbleiterkorper mit mindestens einem feldeffekttransistor mit isolierter torelektrode
CH510937A (de) Verfahren zum Herstellen einer Isolierschicht auf der Oberfläche eines Halbleiterkristalls
AT321991B (de) Verfahren zum herstellen eines halbleiterbauelementes mit einer schottky-sperrschicht
AT256940B (de) Verfahren zum Herstellen einer epitaktischen, kristallinen Schicht, insbesondere Halbleiterschicht
CH523524A (de) Vorrichtung zum Aufladen einer isolierenden Schicht
AT348474B (de) Vorrichtung zum aufbringen einer ebenen schicht
AT261003B (de) Verfahren zum Herstellen von homogenen Oxydschichten auf Halbleiterkristallen
CH451886A (de) Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht
DE1800347B2 (de) Verfahren zum herstellen einer halbleiteranordnung
CH458299A (de) Verfahren zum Herstellen einer einkristallinen Halbleiterschicht
AT285298B (de) Verfahren zum Herstellen von Kegelzahnrädern durch Kaltumformung
AT307506B (de) Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten
CH512821A (de) Verfahren zur Herstellung eines Halbleiterelementes, und nach dem Verfahren hergestelltes Halbleiterelement
AT273230B (de) Verfahren zum Bedecken von Substraten durch Bedampfen
AT303759B (de) Verfahren zur Herstellung von Organosilicium-Verbindungen mit mindestens einer Silicium-Kohlenstoff-Bindung
AT318525B (de) Verfahren zum Herstellen von Skikanten mit L-förmigem Querschnitt
AT264593B (de) Verfahren zum Herstellen einer Halbleiteranordnung mit mindestens drei Zonen von abwechselnd unterschiedlichem Leitungstyp

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee