AT279548B - Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz - Google Patents

Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz

Info

Publication number
AT279548B
AT279548B AT742668A AT742668A AT279548B AT 279548 B AT279548 B AT 279548B AT 742668 A AT742668 A AT 742668A AT 742668 A AT742668 A AT 742668A AT 279548 B AT279548 B AT 279548B
Authority
AT
Austria
Prior art keywords
quartz
cleaning
treatment vessel
vessel made
semiconductor manufacture
Prior art date
Application number
AT742668A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT279548B publication Critical patent/AT279548B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
AT742668A 1968-05-03 1968-07-30 Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz AT279548B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1771305A DE1771305C3 (de) 1968-05-03 1968-05-03 Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz

Publications (1)

Publication Number Publication Date
AT279548B true AT279548B (de) 1970-03-10

Family

ID=5700816

Family Applications (1)

Application Number Title Priority Date Filing Date
AT742668A AT279548B (de) 1968-05-03 1968-07-30 Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz

Country Status (9)

Country Link
US (1) US3645812A (US07655688-20100202-C00086.png)
JP (1) JPS499584B1 (US07655688-20100202-C00086.png)
AT (1) AT279548B (US07655688-20100202-C00086.png)
CH (1) CH484518A (US07655688-20100202-C00086.png)
DE (1) DE1771305C3 (US07655688-20100202-C00086.png)
FR (1) FR1590841A (US07655688-20100202-C00086.png)
GB (1) GB1181764A (US07655688-20100202-C00086.png)
NL (1) NL6811618A (US07655688-20100202-C00086.png)
SE (1) SE330524B (US07655688-20100202-C00086.png)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2138539B1 (US07655688-20100202-C00086.png) * 1971-05-27 1973-05-25 Alsthom
CA1138795A (en) * 1980-02-19 1983-01-04 Goodrich (B.F.) Company (The) Escape slide and life raft
US4597989A (en) * 1984-07-30 1986-07-01 Burroughs Corporation Method of depositing silicon films with reduced structural defects
JPS62113692U (US07655688-20100202-C00086.png) * 1986-01-13 1987-07-20
US4897154A (en) * 1986-07-03 1990-01-30 International Business Machines Corporation Post dry-etch cleaning method for restoring wafer properties
US4816294A (en) * 1987-05-04 1989-03-28 Midwest Research Institute Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes
SG47089A1 (en) * 1991-02-15 1998-03-20 Canon Kk Etching solution for etching porous silicon etching method using the etching solution and method of preparing semiconductor member using the etching solution
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5976247A (en) * 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
US6319313B1 (en) * 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA764933A (en) * 1967-08-08 Siemens And Halske Aktiengesellschaft Processes for the removal of semiconductor material deposited on a support in epitaxy processes
US2419237A (en) * 1945-01-18 1947-04-22 Bell Telephone Labor Inc Translating material and device and method of making them
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching

Also Published As

Publication number Publication date
DE1771305C3 (de) 1974-07-04
JPS499584B1 (US07655688-20100202-C00086.png) 1974-03-05
DE1771305B2 (de) 1973-11-22
FR1590841A (US07655688-20100202-C00086.png) 1970-04-20
NL6811618A (US07655688-20100202-C00086.png) 1969-11-05
CH484518A (de) 1970-01-15
GB1181764A (en) 1970-02-18
SE330524B (US07655688-20100202-C00086.png) 1970-11-23
DE1771305A1 (de) 1971-11-25
US3645812A (en) 1972-02-29

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