KR100910901B1 - 하드마스크 층에 사용하기 위한 반사방지 SiO 함유조성물 - Google Patents
하드마스크 층에 사용하기 위한 반사방지 SiO 함유조성물 Download PDFInfo
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- KR100910901B1 KR100910901B1 KR1020047014412A KR20047014412A KR100910901B1 KR 100910901 B1 KR100910901 B1 KR 100910901B1 KR 1020047014412 A KR1020047014412 A KR 1020047014412A KR 20047014412 A KR20047014412 A KR 20047014412A KR 100910901 B1 KR100910901 B1 KR 100910901B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
막 형성 중합체 | n | k |
중합체 A | 1.656 | 0.006 |
중합체 B | 1.726 | 0.390 |
중합체 C | 1.556 | 0.000 |
주압체 C & D(1:1 중량/중량) | 1.689 | 0.205 |
Claims (11)
- 스핀-온 반사방지 하드마스크 층의 형성에 적합한 조성물로서,(a) (i) SiO 부위를 함유하는 중합체 골격; (ii) 발색단 부위; 및 (iii) 투명 부위;를 갖는 SiO 함유 중합체,(b) 별도의 가교 성분, 및(c) 산 생성제를 포함하는 조성물.
- 제1항에 있어서, 상기 투명 부위는 불포화 탄소-탄소 결합을 함유하지 않은 것인 조성물.
- 제1항에 있어서, 상기 발색단 부위는 불포화 탄소-탄소 결합을 함유하는 것인 조성물.
- 제1항에 있어서, 상기 투명 부위는 157 nm에 투명한 것인 조성물.
- 제4항에 있어서, 상기 투명 부위는 퍼플루오로알킬 및 트리플루오로메틸로 이루어진 군 중에서 선택되는 것인 조성물.
- 제1항에 있어서, 상기 산 생성제는 열 활성화된 산 생성제인 것인 조성물.
- 제1항에 있어서, 상기 SiO 함유 중합체는, 가교 성분과의 반응을 위하여 중합체를 따라 분포된 다수의 반응성 부위를 더 포함하는 것인 조성물.
- 제1항에 있어서, 상기 발색단 부위는 페닐, 크리센, 피렌, 플루오르안트렌, 안트론, 벤조페논, 티오크산톤, 안트라센, 및 탄소-탄소 이중 결합을 함유하는 화합물로 이루어진 군 중에서 선택되는 것인 조성물.
- 제1항에 있어서, 상기 가교 성분은 글리콜루릴(glycoluril) 화합물을 포함하는 것인 조성물.
- 제1항에 있어서, 상기 성분 (a), (b) 및 (c)를 주성분으로 구성되는 것인 조성물.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/124,087 US6730454B2 (en) | 2002-04-16 | 2002-04-16 | Antireflective SiO-containing compositions for hardmask layer |
US10/124,087 | 2002-04-16 | ||
PCT/US2003/010590 WO2003089992A1 (en) | 2002-04-16 | 2003-04-01 | Antireflective sio-containing compositions for hardmask layer |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040099326A KR20040099326A (ko) | 2004-11-26 |
KR100910901B1 true KR100910901B1 (ko) | 2009-08-05 |
Family
ID=29214533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047014412A KR100910901B1 (ko) | 2002-04-16 | 2003-04-01 | 하드마스크 층에 사용하기 위한 반사방지 SiO 함유조성물 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6730454B2 (ko) |
EP (1) | EP1495365A4 (ko) |
JP (1) | JP4384919B2 (ko) |
KR (1) | KR100910901B1 (ko) |
CN (1) | CN1646989B (ko) |
AU (1) | AU2003230825A1 (ko) |
TW (1) | TWI268950B (ko) |
WO (1) | WO2003089992A1 (ko) |
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- 2003-04-01 KR KR1020047014412A patent/KR100910901B1/ko not_active IP Right Cessation
- 2003-04-01 WO PCT/US2003/010590 patent/WO2003089992A1/en active Application Filing
- 2003-04-01 JP JP2003586669A patent/JP4384919B2/ja not_active Expired - Lifetime
- 2003-04-01 AU AU2003230825A patent/AU2003230825A1/en not_active Abandoned
- 2003-04-01 EP EP03723925A patent/EP1495365A4/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
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JP2005523474A (ja) | 2005-08-04 |
JP4384919B2 (ja) | 2009-12-16 |
KR20040099326A (ko) | 2004-11-26 |
US6730454B2 (en) | 2004-05-04 |
EP1495365A4 (en) | 2009-06-03 |
TWI268950B (en) | 2006-12-21 |
WO2003089992A1 (en) | 2003-10-30 |
CN1646989B (zh) | 2011-06-01 |
CN1646989A (zh) | 2005-07-27 |
US20030198877A1 (en) | 2003-10-23 |
EP1495365A1 (en) | 2005-01-12 |
TW200307014A (en) | 2003-12-01 |
AU2003230825A1 (en) | 2003-11-03 |
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