ZA814176B - Positive-working radiation-sensitive mixture - Google Patents
Positive-working radiation-sensitive mixtureInfo
- Publication number
- ZA814176B ZA814176B ZA814176A ZA814176A ZA814176B ZA 814176 B ZA814176 B ZA 814176B ZA 814176 A ZA814176 A ZA 814176A ZA 814176 A ZA814176 A ZA 814176A ZA 814176 B ZA814176 B ZA 814176B
- Authority
- ZA
- South Africa
- Prior art keywords
- good
- positive
- sensitive mixture
- binder
- working radiation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S522/00—Synthetic resins or natural rubbers -- part of the class 520 series
- Y10S522/904—Monomer or polymer contains initiating group
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Photoreceptors In Electrophotography (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19803023201 DE3023201A1 (de) | 1980-06-21 | 1980-06-21 | Positiv arbeitendes strahlungsempfindliches gemisch |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA814176B true ZA814176B (en) | 1982-07-28 |
Family
ID=6105078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA814176A ZA814176B (en) | 1980-06-21 | 1981-06-19 | Positive-working radiation-sensitive mixture |
Country Status (10)
Country | Link |
---|---|
US (1) | US4506003A (ko) |
EP (1) | EP0042562B1 (ko) |
JP (1) | JPS5737349A (ko) |
KR (1) | KR840001602B1 (ko) |
AT (1) | ATE13729T1 (ko) |
CA (1) | CA1235831A (ko) |
DE (2) | DE3023201A1 (ko) |
HK (1) | HK76585A (ko) |
MY (1) | MY8600248A (ko) |
ZA (1) | ZA814176B (ko) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS608100A (ja) * | 1983-06-28 | 1985-01-16 | 旭化成株式会社 | 吹き付け食刻方法 |
DE3337024A1 (de) * | 1983-10-12 | 1985-04-25 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliche, trichlormethylgruppen aufweisende verbindungen, verfahren zu ihrer herstellung und diese verbindungen enthaltendes lichtempfindliches gemisch |
US4544466A (en) * | 1983-12-06 | 1985-10-01 | Phillips Petroleum Company | Process of making U.V. cured polyurethanes using diazonium salt promoters |
DE3406927A1 (de) * | 1984-02-25 | 1985-08-29 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen |
DE3421160A1 (de) * | 1984-06-07 | 1985-12-12 | Hoechst Ag, 6230 Frankfurt | Positiv arbeitende strahlungsempfindliche beschichtungsloesung |
DE3582697D1 (de) * | 1984-06-07 | 1991-06-06 | Hoechst Ag | Positiv arbeitende strahlungsempfindliche beschichtungsloesung. |
US4571373A (en) * | 1984-06-11 | 1986-02-18 | Minnesota Mining And Manufacturing Company | Exposure latitude improvement in printing positive-acting color pre-press proofs |
JPH0650392B2 (ja) * | 1985-07-12 | 1994-06-29 | 富士写真フイルム株式会社 | 感光性平版印刷版の製造方法 |
DE3528929A1 (de) * | 1985-08-13 | 1987-02-26 | Hoechst Ag | Strahlungsempfindliches gemisch, dieses enthaltendes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefbildern |
ATE41341T1 (de) * | 1985-10-07 | 1989-04-15 | Interatom | Giesskopf fuer eine fluessigmetalldosiervorrichtung und verfahren zu seiner benutzung. |
DE3537441A1 (de) * | 1985-10-22 | 1987-04-23 | Hoechst Ag | Loesemittel zum entfernen von photoresists |
DE3541534A1 (de) * | 1985-11-25 | 1987-05-27 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch |
US4897336A (en) * | 1986-04-11 | 1990-01-30 | Chien James C W | Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether |
EP0249139B2 (en) * | 1986-06-13 | 1998-03-11 | MicroSi, Inc. (a Delaware corporation) | Resist compositions and use |
DE3621376A1 (de) * | 1986-06-26 | 1988-01-07 | Hoechst Ag | Strahlungsempfindliches aufzeichnungsmaterial |
MY103006A (en) * | 1987-03-30 | 1993-03-31 | Microsi Inc | Photoresist compositions |
DE3716848A1 (de) * | 1987-05-20 | 1988-12-01 | Hoechst Ag | Verfahren zur bebilderung lichtempfindlichen materials |
DE3725741A1 (de) * | 1987-08-04 | 1989-02-16 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch |
DE3729035A1 (de) * | 1987-08-31 | 1989-03-09 | Hoechst Ag | Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes photolithographisches aufzeichnungsmaterial |
DE3737734A1 (de) * | 1987-11-06 | 1989-05-18 | Hoechst Ag | Strahlungsempfindliches gemisch |
DE3827901A1 (de) * | 1988-08-17 | 1990-02-22 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
DE3930087A1 (de) * | 1989-09-09 | 1991-03-14 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
DE3930086A1 (de) * | 1989-09-09 | 1991-03-21 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
US5164278A (en) * | 1990-03-01 | 1992-11-17 | International Business Machines Corporation | Speed enhancers for acid sensitized resists |
JPH0480758A (ja) * | 1990-07-23 | 1992-03-13 | Fuji Photo Film Co Ltd | 感光性組成物 |
DE4125723A1 (de) * | 1991-08-02 | 1993-02-04 | Hoechst Ag | Verfahren zur herstellung eines mehrfarbenbilds und lichtempfindliches material zur durchfuehrung dieses verfahrens |
EP0536690B1 (en) * | 1991-10-07 | 1998-09-09 | Fuji Photo Film Co., Ltd. | Light-sensitive composition |
DE4243253A1 (de) * | 1992-12-19 | 1994-06-23 | Hoechst Ag | Lichtempfindliches Material und Verfahren zur Herstellung von Farbprüffolien |
DE4432294A1 (de) * | 1994-09-12 | 1996-03-14 | Telefunken Microelectron | Verfahren zur Reduzierung der Oberflächenrekombinationsgeschwindigkeit in Silizium |
US5858605A (en) * | 1997-03-08 | 1999-01-12 | Shipley Company, L.L.C. | Acid labile photoactive composition |
US6451505B1 (en) | 2000-08-04 | 2002-09-17 | Kodak Polychrome Graphics Llc | Imageable element and method of preparation thereof |
DE10105278A1 (de) * | 2001-02-02 | 2002-08-08 | Basf Ag | Klebstoffe, enthaltend Polyvinylalkylether |
US6830866B2 (en) * | 2001-06-15 | 2004-12-14 | Shi-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
US7255972B2 (en) | 2002-10-23 | 2007-08-14 | Az Electronic Materials Usa Corp. | Chemically amplified positive photosensitive resin composition |
JP4440600B2 (ja) * | 2003-10-31 | 2010-03-24 | Azエレクトロニックマテリアルズ株式会社 | 厚膜および超厚膜対応化学増幅型感光性樹脂組成物 |
US8808808B2 (en) * | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
JP2007029152A (ja) * | 2005-07-22 | 2007-02-08 | Takano Co Ltd | 張り材の取付構造 |
US8557351B2 (en) | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
US8846195B2 (en) * | 2005-07-22 | 2014-09-30 | Canon Nanotechnologies, Inc. | Ultra-thin polymeric adhesion layer |
US8361546B2 (en) * | 2008-10-30 | 2013-01-29 | Molecular Imprints, Inc. | Facilitating adhesion between substrate and patterned layer |
DE102009019745A1 (de) * | 2009-05-02 | 2010-11-11 | Karlsruher Institut für Technologie | Verfahren zur Strukturierung einer Schicht aus Silikon und Verwendung einer hierfür entwickelten Mischung |
WO2011066450A2 (en) * | 2009-11-24 | 2011-06-03 | Molecular Imprints, Inc. | Adhesion layers in nanoimprint lithography |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3634082A (en) * | 1967-07-07 | 1972-01-11 | Shipley Co | Light-sensitive naphthoquinone diazide composition containing a polyvinyl ether |
US3779778A (en) * | 1972-02-09 | 1973-12-18 | Minnesota Mining & Mfg | Photosolubilizable compositions and elements |
DE2236941C3 (de) * | 1972-07-27 | 1982-03-25 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches Aufzeichnungsmaterial |
US3917483A (en) * | 1973-11-01 | 1975-11-04 | Xerox Corp | Photoinduced acid catalyzed depolymerization of degradable polymers |
CH621416A5 (ko) * | 1975-03-27 | 1981-01-30 | Hoechst Ag | |
US4189320A (en) * | 1975-04-29 | 1980-02-19 | American Hoechst Corporation | Light-sensitive o-quinone diazide compositions and photographic reproduction processes and structures |
DE2617088A1 (de) * | 1975-04-29 | 1976-11-11 | Hoechst Co American | Lichtempfindliche kopiermasse |
US4148654A (en) * | 1976-07-22 | 1979-04-10 | Oddi Michael J | Positive acting photoresist comprising diazide ester, novolak resin and rosin |
DE2718254C3 (de) * | 1977-04-25 | 1980-04-10 | Hoechst Ag, 6000 Frankfurt | Strahlungsempfindliche Kopiermasse |
US4189323A (en) * | 1977-04-25 | 1980-02-19 | Hoechst Aktiengesellschaft | Radiation-sensitive copying composition |
-
1980
- 1980-06-21 DE DE19803023201 patent/DE3023201A1/de not_active Withdrawn
-
1981
- 1981-06-09 CA CA000379333A patent/CA1235831A/en not_active Expired
- 1981-06-13 DE DE8181104570T patent/DE3170823D1/de not_active Expired
- 1981-06-13 EP EP81104570A patent/EP0042562B1/de not_active Expired
- 1981-06-13 AT AT81104570T patent/ATE13729T1/de not_active IP Right Cessation
- 1981-06-19 ZA ZA814176A patent/ZA814176B/xx unknown
- 1981-06-19 JP JP9412081A patent/JPS5737349A/ja active Granted
- 1981-06-20 KR KR1019810002253A patent/KR840001602B1/ko active
-
1983
- 1983-11-14 US US06/551,025 patent/US4506003A/en not_active Expired - Lifetime
-
1985
- 1985-10-10 HK HK765/85A patent/HK76585A/xx not_active IP Right Cessation
-
1986
- 1986-12-30 MY MY248/86A patent/MY8600248A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE3170823D1 (en) | 1985-07-11 |
DE3023201A1 (de) | 1982-01-07 |
JPS5737349A (en) | 1982-03-01 |
CA1235831A (en) | 1988-04-26 |
ATE13729T1 (de) | 1985-06-15 |
MY8600248A (en) | 1986-12-31 |
KR840001602B1 (ko) | 1984-10-11 |
EP0042562B1 (de) | 1985-06-05 |
JPH0143940B2 (ko) | 1989-09-25 |
US4506003A (en) | 1985-03-19 |
EP0042562A3 (en) | 1982-11-17 |
EP0042562A2 (de) | 1981-12-30 |
HK76585A (en) | 1985-10-18 |
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