ZA814176B - Positive-working radiation-sensitive mixture - Google Patents

Positive-working radiation-sensitive mixture

Info

Publication number
ZA814176B
ZA814176B ZA814176A ZA814176A ZA814176B ZA 814176 B ZA814176 B ZA 814176B ZA 814176 A ZA814176 A ZA 814176A ZA 814176 A ZA814176 A ZA 814176A ZA 814176 B ZA814176 B ZA 814176B
Authority
ZA
South Africa
Prior art keywords
good
positive
sensitive mixture
binder
working radiation
Prior art date
Application number
ZA814176A
Other languages
English (en)
Inventor
Hans Ruckert
Gerhard Buhr
Hartmut Steppan
Original Assignee
Hoechst Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Ag filed Critical Hoechst Ag
Publication of ZA814176B publication Critical patent/ZA814176B/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S522/00—Synthetic resins or natural rubbers -- part of the class 520 series
    • Y10S522/904—Monomer or polymer contains initiating group

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
ZA814176A 1980-06-21 1981-06-19 Positive-working radiation-sensitive mixture ZA814176B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803023201 DE3023201A1 (de) 1980-06-21 1980-06-21 Positiv arbeitendes strahlungsempfindliches gemisch

Publications (1)

Publication Number Publication Date
ZA814176B true ZA814176B (en) 1982-07-28

Family

ID=6105078

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA814176A ZA814176B (en) 1980-06-21 1981-06-19 Positive-working radiation-sensitive mixture

Country Status (10)

Country Link
US (1) US4506003A (ko)
EP (1) EP0042562B1 (ko)
JP (1) JPS5737349A (ko)
KR (1) KR840001602B1 (ko)
AT (1) ATE13729T1 (ko)
CA (1) CA1235831A (ko)
DE (2) DE3023201A1 (ko)
HK (1) HK76585A (ko)
MY (1) MY8600248A (ko)
ZA (1) ZA814176B (ko)

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JPS608100A (ja) * 1983-06-28 1985-01-16 旭化成株式会社 吹き付け食刻方法
DE3337024A1 (de) * 1983-10-12 1985-04-25 Hoechst Ag, 6230 Frankfurt Lichtempfindliche, trichlormethylgruppen aufweisende verbindungen, verfahren zu ihrer herstellung und diese verbindungen enthaltendes lichtempfindliches gemisch
US4544466A (en) * 1983-12-06 1985-10-01 Phillips Petroleum Company Process of making U.V. cured polyurethanes using diazonium salt promoters
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
DE3421160A1 (de) * 1984-06-07 1985-12-12 Hoechst Ag, 6230 Frankfurt Positiv arbeitende strahlungsempfindliche beschichtungsloesung
DE3582697D1 (de) * 1984-06-07 1991-06-06 Hoechst Ag Positiv arbeitende strahlungsempfindliche beschichtungsloesung.
US4571373A (en) * 1984-06-11 1986-02-18 Minnesota Mining And Manufacturing Company Exposure latitude improvement in printing positive-acting color pre-press proofs
JPH0650392B2 (ja) * 1985-07-12 1994-06-29 富士写真フイルム株式会社 感光性平版印刷版の製造方法
DE3528929A1 (de) * 1985-08-13 1987-02-26 Hoechst Ag Strahlungsempfindliches gemisch, dieses enthaltendes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefbildern
ATE41341T1 (de) * 1985-10-07 1989-04-15 Interatom Giesskopf fuer eine fluessigmetalldosiervorrichtung und verfahren zu seiner benutzung.
DE3537441A1 (de) * 1985-10-22 1987-04-23 Hoechst Ag Loesemittel zum entfernen von photoresists
DE3541534A1 (de) * 1985-11-25 1987-05-27 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch
US4897336A (en) * 1986-04-11 1990-01-30 Chien James C W Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether
EP0249139B2 (en) * 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Resist compositions and use
DE3621376A1 (de) * 1986-06-26 1988-01-07 Hoechst Ag Strahlungsempfindliches aufzeichnungsmaterial
MY103006A (en) * 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
DE3716848A1 (de) * 1987-05-20 1988-12-01 Hoechst Ag Verfahren zur bebilderung lichtempfindlichen materials
DE3725741A1 (de) * 1987-08-04 1989-02-16 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch
DE3729035A1 (de) * 1987-08-31 1989-03-09 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes photolithographisches aufzeichnungsmaterial
DE3737734A1 (de) * 1987-11-06 1989-05-18 Hoechst Ag Strahlungsempfindliches gemisch
DE3827901A1 (de) * 1988-08-17 1990-02-22 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5164278A (en) * 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
JPH0480758A (ja) * 1990-07-23 1992-03-13 Fuji Photo Film Co Ltd 感光性組成物
DE4125723A1 (de) * 1991-08-02 1993-02-04 Hoechst Ag Verfahren zur herstellung eines mehrfarbenbilds und lichtempfindliches material zur durchfuehrung dieses verfahrens
EP0536690B1 (en) * 1991-10-07 1998-09-09 Fuji Photo Film Co., Ltd. Light-sensitive composition
DE4243253A1 (de) * 1992-12-19 1994-06-23 Hoechst Ag Lichtempfindliches Material und Verfahren zur Herstellung von Farbprüffolien
DE4432294A1 (de) * 1994-09-12 1996-03-14 Telefunken Microelectron Verfahren zur Reduzierung der Oberflächenrekombinationsgeschwindigkeit in Silizium
US5858605A (en) * 1997-03-08 1999-01-12 Shipley Company, L.L.C. Acid labile photoactive composition
US6451505B1 (en) 2000-08-04 2002-09-17 Kodak Polychrome Graphics Llc Imageable element and method of preparation thereof
DE10105278A1 (de) * 2001-02-02 2002-08-08 Basf Ag Klebstoffe, enthaltend Polyvinylalkylether
US6830866B2 (en) * 2001-06-15 2004-12-14 Shi-Etsu Chemical Co., Ltd. Resist composition and patterning process
US7255972B2 (en) 2002-10-23 2007-08-14 Az Electronic Materials Usa Corp. Chemically amplified positive photosensitive resin composition
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US8808808B2 (en) * 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
JP2007029152A (ja) * 2005-07-22 2007-02-08 Takano Co Ltd 張り材の取付構造
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8846195B2 (en) * 2005-07-22 2014-09-30 Canon Nanotechnologies, Inc. Ultra-thin polymeric adhesion layer
US8361546B2 (en) * 2008-10-30 2013-01-29 Molecular Imprints, Inc. Facilitating adhesion between substrate and patterned layer
DE102009019745A1 (de) * 2009-05-02 2010-11-11 Karlsruher Institut für Technologie Verfahren zur Strukturierung einer Schicht aus Silikon und Verwendung einer hierfür entwickelten Mischung
WO2011066450A2 (en) * 2009-11-24 2011-06-03 Molecular Imprints, Inc. Adhesion layers in nanoimprint lithography

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634082A (en) * 1967-07-07 1972-01-11 Shipley Co Light-sensitive naphthoquinone diazide composition containing a polyvinyl ether
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
DE2236941C3 (de) * 1972-07-27 1982-03-25 Hoechst Ag, 6000 Frankfurt Lichtempfindliches Aufzeichnungsmaterial
US3917483A (en) * 1973-11-01 1975-11-04 Xerox Corp Photoinduced acid catalyzed depolymerization of degradable polymers
CH621416A5 (ko) * 1975-03-27 1981-01-30 Hoechst Ag
US4189320A (en) * 1975-04-29 1980-02-19 American Hoechst Corporation Light-sensitive o-quinone diazide compositions and photographic reproduction processes and structures
DE2617088A1 (de) * 1975-04-29 1976-11-11 Hoechst Co American Lichtempfindliche kopiermasse
US4148654A (en) * 1976-07-22 1979-04-10 Oddi Michael J Positive acting photoresist comprising diazide ester, novolak resin and rosin
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
US4189323A (en) * 1977-04-25 1980-02-19 Hoechst Aktiengesellschaft Radiation-sensitive copying composition

Also Published As

Publication number Publication date
DE3170823D1 (en) 1985-07-11
DE3023201A1 (de) 1982-01-07
JPS5737349A (en) 1982-03-01
CA1235831A (en) 1988-04-26
ATE13729T1 (de) 1985-06-15
MY8600248A (en) 1986-12-31
KR840001602B1 (ko) 1984-10-11
EP0042562B1 (de) 1985-06-05
JPH0143940B2 (ko) 1989-09-25
US4506003A (en) 1985-03-19
EP0042562A3 (en) 1982-11-17
EP0042562A2 (de) 1981-12-30
HK76585A (en) 1985-10-18

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