ZA200800436B - Semiconducting nanoparticles with surface modification - Google Patents

Semiconducting nanoparticles with surface modification

Info

Publication number
ZA200800436B
ZA200800436B ZA200800436A ZA200800436A ZA200800436B ZA 200800436 B ZA200800436 B ZA 200800436B ZA 200800436 A ZA200800436 A ZA 200800436A ZA 200800436 A ZA200800436 A ZA 200800436A ZA 200800436 B ZA200800436 B ZA 200800436B
Authority
ZA
South Africa
Prior art keywords
surface modification
semiconducting nanoparticles
semiconducting
nanoparticles
modification
Prior art date
Application number
ZA200800436A
Other languages
English (en)
Inventor
Britton David Thomas
Haerting Margit
Original Assignee
Univ Cape Town
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Cape Town filed Critical Univ Cape Town
Priority to ZA200800436A priority Critical patent/ZA200800436B/xx
Publication of ZA200800436B publication Critical patent/ZA200800436B/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ZA200800436A 2005-06-30 2006-06-29 Semiconducting nanoparticles with surface modification ZA200800436B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ZA200800436A ZA200800436B (en) 2005-06-30 2006-06-29 Semiconducting nanoparticles with surface modification

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA200505300 2005-06-30
ZA200800436A ZA200800436B (en) 2005-06-30 2006-06-29 Semiconducting nanoparticles with surface modification

Publications (1)

Publication Number Publication Date
ZA200800436B true ZA200800436B (en) 2009-09-30

Family

ID=37604837

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200800436A ZA200800436B (en) 2005-06-30 2006-06-29 Semiconducting nanoparticles with surface modification

Country Status (7)

Country Link
US (1) US8354662B2 (ja)
EP (1) EP1899261A2 (ja)
JP (1) JP5361376B2 (ja)
KR (1) KR101462435B1 (ja)
CN (2) CN101218168A (ja)
WO (1) WO2007004014A2 (ja)
ZA (1) ZA200800436B (ja)

Families Citing this family (19)

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US20080083926A1 (en) * 2006-10-10 2008-04-10 Nokia Corporation Printing device structures using nanoparticles
JP5750706B2 (ja) * 2009-10-29 2015-07-22 小川　一文 Ｓｉ微粒子を用いたＴＦＴ及びその製造方法とそれらを用いたＴＦＴアレイと表示デバイス
KR20110061751A (ko) * 2009-12-02 2011-06-10 한국전자통신연구원 열전소자용 유-무기 하이브리드 나노섬유 및 그 제조방법
EP2617270A4 (en) 2010-09-13 2017-10-04 PST Sensors (Pty) Limited Assembling and packaging a discrete electronic component
RU2013116739A (ru) 2010-09-13 2014-10-20 Пи-Эс-Ти Сенсорс (Пропрайетри) Лимитед Печатный датчик температуры
ES2816602T3 (es) 2010-11-30 2021-04-05 Msmh Llc Procedimiento para la deposición de nanopartículas sobre sustratos y fabricación de un dispositivo de alta densidad de energía
FR2972461B1 (fr) * 2011-03-09 2021-01-01 Inst Nat Sciences Appliquees Lyon Procede de fabrication de nanoparticules semi-conductrices
CN104781956B (zh) 2012-08-21 2018-01-30 克雷多斯公司 Iva族官能化粒子及其使用方法
US9461309B2 (en) * 2012-08-21 2016-10-04 Kratos LLC Group IVA functionalized particles and methods of use thereof
KR101525525B1 (ko) 2014-02-05 2015-06-03 삼성전자주식회사 나노 결정 입자 및 그의 제조 방법
KR20160125441A (ko) * 2014-02-21 2016-10-31 크라토스 엘엘씨 관능화된 iva족 입자 골격을 위한 나노규소 물질 제조
EP3142965A4 (en) 2014-05-15 2018-01-24 Msmh, Llc Methods and systems for the synthesis of nanoparticles including strained nanoparticles
US10629320B2 (en) 2014-05-15 2020-04-21 Msmh, Llc Method for producing sulfur charged carbon nanotubes and cathodes for lithium ion batteries
JP6541774B2 (ja) 2014-05-15 2019-07-10 エムエスエムエイチ，エルエルシー リチウムによってインターカレートされたナノ結晶系アノード
GB201513366D0 (en) * 2015-07-29 2015-09-09 Univ Ulster Photovoltaic device
KR20190042558A (ko) 2016-07-05 2019-04-24 크라토스 엘엘씨 부동태화된 예비리튬화된 마이크론 및 서브마이크론 iva족 입자 및 이의 제조방법
CN109803918A (zh) * 2016-07-19 2019-05-24 昆腾硅公司 多硅原子量子点和包含其的设备
WO2018183909A1 (en) 2017-03-31 2018-10-04 Kratos LLC Precharged negative electrode material for secondary battery
WO2024062628A1 (ja) * 2022-09-22 2024-03-28 シャープディスプレイテクノロジー株式会社 発光素子、表示デバイス、発光素子の製造方法

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* Cited by examiner, † Cited by third party
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US6344272B1 (en) * 1997-03-12 2002-02-05 Wm. Marsh Rice University Metal nanoshells
GB9724642D0 (en) * 1997-11-21 1998-01-21 British Tech Group Single electron devices
EP1320116A1 (en) * 2001-04-24 2003-06-18 Matsushita Electric Works, Ltd. Field emission electron source and production method thereof
US6918946B2 (en) * 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
US6710366B1 (en) * 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
EP1593163B1 (en) * 2003-01-30 2015-06-17 PST Sensors (Pty) Limited A thin film semiconductor device and method of manufacturing a thin film semiconductor device
US7371666B2 (en) * 2003-03-12 2008-05-13 The Research Foundation Of State University Of New York Process for producing luminescent silicon nanoparticles
US7083694B2 (en) 2003-04-23 2006-08-01 Integrated Materials, Inc. Adhesive of a silicon and silica composite particularly useful for joining silicon parts

Also Published As

Publication number Publication date
CN106185797A (zh) 2016-12-07
CN101218168A (zh) 2008-07-09
KR20080096640A (ko) 2008-10-31
WO2007004014A3 (en) 2007-05-18
JP5361376B2 (ja) 2013-12-04
JP2009500272A (ja) 2009-01-08
US8354662B2 (en) 2013-01-15
CN106185797B (zh) 2019-03-12
WO2007004014A2 (en) 2007-01-11
KR101462435B1 (ko) 2014-11-17
US20100148144A1 (en) 2010-06-17
EP1899261A2 (en) 2008-03-19

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