ZA200100189B - Gate drive for insulated gate power semiconductors. - Google Patents
Gate drive for insulated gate power semiconductors. Download PDFInfo
- Publication number
- ZA200100189B ZA200100189B ZA200100189A ZA200100189A ZA200100189B ZA 200100189 B ZA200100189 B ZA 200100189B ZA 200100189 A ZA200100189 A ZA 200100189A ZA 200100189 A ZA200100189 A ZA 200100189A ZA 200100189 B ZA200100189 B ZA 200100189B
- Authority
- ZA
- South Africa
- Prior art keywords
- voltage
- current
- gate
- drain
- source
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 230000008859 change Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 abstract description 16
- 238000013461 design Methods 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000007792 addition Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- BNPSSFBOAGDEEL-UHFFFAOYSA-N albuterol sulfate Chemical compound OS(O)(=O)=O.CC(C)(C)NCC(O)C1=CC=C(O)C(CO)=C1.CC(C)(C)NCC(O)C1=CC=C(O)C(CO)=C1 BNPSSFBOAGDEEL-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NZ33068798 | 1998-06-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA200100189B true ZA200100189B (en) | 2003-04-08 |
Family
ID=19926772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA200100189A ZA200100189B (en) | 1998-06-12 | 2001-01-08 | Gate drive for insulated gate power semiconductors. |
Country Status (12)
Country | Link |
---|---|
US (1) | US6556062B1 (ko) |
EP (1) | EP1105970B1 (ko) |
JP (1) | JP2002518868A (ko) |
KR (1) | KR20010071460A (ko) |
CN (1) | CN1312973A (ko) |
AT (1) | ATE254357T1 (ko) |
AU (1) | AU4535799A (ko) |
CA (1) | CA2335124A1 (ko) |
EA (1) | EA200100030A1 (ko) |
HK (1) | HK1038447A1 (ko) |
WO (1) | WO1999065144A1 (ko) |
ZA (1) | ZA200100189B (ko) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4212767B2 (ja) | 2000-12-21 | 2009-01-21 | 旭化成エレクトロニクス株式会社 | 高速電流スイッチ回路および高周波電流源 |
EP1280033B1 (en) * | 2001-07-26 | 2006-05-31 | AMI Semiconductor Belgium BVBA | EMC immune low drop regulator |
CN100442663C (zh) * | 2002-11-18 | 2008-12-10 | Nxp股份有限公司 | 具有可控转换速率的接通总线发送器 |
US7737666B2 (en) * | 2003-08-04 | 2010-06-15 | Marvell World Trade Ltd. | Split gate drive scheme to improve reliable voltage operation range |
GB2417149A (en) * | 2004-08-12 | 2006-02-15 | Bombardier Transp Gmbh | Digital adaptive control of IGBT or MOS gate charging current in a converter for a railway traction motor |
FR2874767B1 (fr) * | 2004-08-27 | 2006-10-20 | Schneider Toshiba Inverter | Dispositif de commande d'un transistor de puissance |
DE102006015024B3 (de) * | 2006-03-31 | 2007-09-06 | Infineon Technologies Ag | Treiberschaltung zum Bereitstellen eines Ausgangssignals |
US7285876B1 (en) | 2006-05-01 | 2007-10-23 | Raytheon Company | Regenerative gate drive circuit for power MOSFET |
GB0617990D0 (en) * | 2006-09-13 | 2006-10-18 | Palmer Patrick R | Control of power semiconductor devices |
CN101135718B (zh) * | 2007-09-10 | 2010-06-02 | 中兴通讯股份有限公司 | 一种驱动器电路 |
JP5119894B2 (ja) * | 2007-12-06 | 2013-01-16 | 富士電機株式会社 | ドライバ回路 |
CN101697454B (zh) * | 2009-10-30 | 2011-09-14 | 北京航星力源科技有限公司 | 绝缘栅器件的栅极驱动电路 |
JP6504832B2 (ja) | 2014-01-28 | 2019-04-24 | ゼネラル・エレクトリック・カンパニイ | 統合された取り付けおよび冷却の装置、電子装置、および車両 |
US9425786B2 (en) | 2014-11-17 | 2016-08-23 | General Electric Company | System and method for driving a power switch |
US10073512B2 (en) | 2014-11-19 | 2018-09-11 | General Electric Company | System and method for full range control of dual active bridge |
DE102015221636A1 (de) * | 2015-11-04 | 2017-05-04 | Robert Bosch Gmbh | Verfahren zum Betreiben eines Metall-Oxid-Halbleiter-Feldeffekttransistors |
CN105226919B (zh) * | 2015-11-04 | 2018-06-26 | 广州金升阳科技有限公司 | 一种功率mosfet的软驱动方法及电路 |
US10071652B2 (en) * | 2016-05-11 | 2018-09-11 | Ford Global Technologies, Llc | Dual mode IGBT gate drive to reduce switching loss |
IT201600119626A1 (it) | 2016-11-25 | 2018-05-25 | St Microelectronics Srl | Circuito di pilotaggio, dispositivo, apparecchiatura e procedimento corrispondenti |
US10483868B2 (en) * | 2017-02-16 | 2019-11-19 | Dell Products, Lp | Power supply unit with re-rush current limiting |
JP2022117063A (ja) * | 2021-01-29 | 2022-08-10 | マツダ株式会社 | 負荷駆動制御装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055721A (en) * | 1989-04-13 | 1991-10-08 | Mitsubishi Denki Kabushiki Kaisha | Drive circuit for igbt device |
US5157351A (en) | 1991-08-28 | 1992-10-20 | Sgs-Thomson Microelectronics, Inc. | Insulated gate enhancement mode field effect transistor with slew-rate control on drain output |
GB2260045A (en) * | 1991-09-25 | 1993-03-31 | Nat Semiconductor Corp | Current source/sink MOSFET circuit |
US5397967A (en) * | 1992-06-30 | 1995-03-14 | Sgs-Thomson Microelectronics, Inc. | Slew rate circuit for high side driver for a polyphase DC motor |
DE69313833T2 (de) * | 1993-05-31 | 1998-01-22 | St Microelectronics Srl | Verringerung der Ausschaltszeit eines Ausgangsleistungstransistors |
DE69306764T2 (de) * | 1993-05-31 | 1997-04-10 | Sgs Thomson Microelectronics | Abschaltbarer Halbbrücken-Austragszeit-Regler unter Verwendung eines einzelnen Kondensators |
EP0684699B1 (en) * | 1994-05-25 | 2001-10-24 | STMicroelectronics S.r.l. | Slew rate control and optimization of power consumption in a power stage |
KR100320672B1 (ko) * | 1995-12-30 | 2002-05-13 | 김덕중 | 스위칭 제어 집적회로 |
DE19610895A1 (de) * | 1996-03-20 | 1997-09-25 | Abb Research Ltd | Verfahren zur Einschaltregelung eines IGBTs und Vorrichtung zur Durchführung des Verfahrens |
DE19635332A1 (de) * | 1996-08-30 | 1998-03-12 | Siemens Ag | Leistungstransistor mit Kurzschluß-Schutz |
US5742193A (en) * | 1996-10-24 | 1998-04-21 | Sgs-Thomson Microelectronics, Inc. | Driver circuit including preslewing circuit for improved slew rate control |
US5828245A (en) * | 1996-10-24 | 1998-10-27 | Stmicroelectronics, Inc. | Driver circuit including amplifier operated in a switching mode |
US5825218A (en) * | 1996-10-24 | 1998-10-20 | Stmicroelectronics, Inc. | Driver circuit including slew rate control system with improved voltage ramp generator |
US6144374A (en) * | 1997-05-15 | 2000-11-07 | Orion Electric Co., Ltd. | Apparatus for driving a flat panel display |
DE69728134T2 (de) * | 1997-05-30 | 2004-10-14 | Stmicroelectronics S.R.L., Agrate Brianza | Steuerschaltung für die Strom-Schalt-Flanken eines Leistungstransistors |
JP3409994B2 (ja) * | 1997-06-20 | 2003-05-26 | 株式会社東芝 | 自己消弧形素子駆動回路 |
US5939909A (en) * | 1998-03-31 | 1999-08-17 | Stmicroelectronics, Inc. | Driver circuit having preslewing circuitry for improved slew rate control |
-
1999
- 1999-06-11 KR KR1020007014114A patent/KR20010071460A/ko not_active Application Discontinuation
- 1999-06-11 JP JP2000554053A patent/JP2002518868A/ja active Pending
- 1999-06-11 EA EA200100030A patent/EA200100030A1/ru unknown
- 1999-06-11 CA CA002335124A patent/CA2335124A1/en not_active Abandoned
- 1999-06-11 AT AT99928255T patent/ATE254357T1/de not_active IP Right Cessation
- 1999-06-11 EP EP99928255A patent/EP1105970B1/en not_active Expired - Lifetime
- 1999-06-11 AU AU45357/99A patent/AU4535799A/en not_active Abandoned
- 1999-06-11 CN CN99807331A patent/CN1312973A/zh active Pending
- 1999-06-11 US US09/719,509 patent/US6556062B1/en not_active Expired - Fee Related
- 1999-06-11 WO PCT/NZ1999/000082 patent/WO1999065144A1/en active IP Right Grant
-
2001
- 2001-01-08 ZA ZA200100189A patent/ZA200100189B/en unknown
-
2002
- 2002-01-04 HK HK02100050.5A patent/HK1038447A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1105970A4 (en) | 2001-06-13 |
HK1038447A1 (zh) | 2002-03-15 |
KR20010071460A (ko) | 2001-07-28 |
CN1312973A (zh) | 2001-09-12 |
EP1105970B1 (en) | 2003-11-12 |
JP2002518868A (ja) | 2002-06-25 |
EA200100030A1 (ru) | 2001-06-25 |
ATE254357T1 (de) | 2003-11-15 |
EP1105970A1 (en) | 2001-06-13 |
AU4535799A (en) | 1999-12-30 |
WO1999065144A1 (en) | 1999-12-16 |
CA2335124A1 (en) | 1999-12-16 |
US6556062B1 (en) | 2003-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6556062B1 (en) | Gate drive for insulated gate power semiconductors | |
Zhang et al. | Advanced active gate drive for switching performance improvement and overvoltage protection of high-power IGBTs | |
US20220116033A1 (en) | High voltage nanosecond pulser | |
JP7149942B2 (ja) | ゲート駆動回路およびそれを動作させる方法 | |
US6459324B1 (en) | Gate drive circuit with feedback-controlled active resistance | |
US8427226B2 (en) | Device for controlling a power transistor | |
Wang et al. | Crosstalk suppression in a 650-V GaN FET bridgeleg converter using 6.7-GHz active gate driver | |
Palmer et al. | An experimental comparison of GaN, SiC and Si switching power devices | |
US20140240007A1 (en) | Drive Circuit For Power Transistor | |
Jones et al. | Investigation of IGBT switching energy loss and peak overvoltage using digital active gate drives | |
Wang et al. | Design of an advanced programmable current-source gate driver for dynamic control of SiC device | |
Igarashi et al. | An active control gate drive circuit for IGBTs to realize low-noise and snubberless system | |
Rodal et al. | An adaptive current source gate driver for SiC MOSFETs with double gate current injection | |
Andreycak | Practical considerations in high performance MOSFET, IGBT and MCT gate drive circuits | |
KR101001282B1 (ko) | Ldmos fet를 이용한 l-대역 고속 펄스 고전력증폭기 | |
Neacsu | Active Gate Drivers for motor control applications | |
Rahimo et al. | Analysis of the IGBT/freewheeling diode switching behaviour during turn-on in hard switching applications | |
JP4722341B2 (ja) | ゲートノイズ抑制回路 | |
Gröger | Dual-Loop Gate Drivers with Analog and Digital Slope Shaping | |
Simas et al. | CAD tools to optimize power MOSFET performance using channel reverse conduction | |
Ivaniš et al. | An Overview of Advanced Gate Driver Concepts for SiC Semiconductors | |
US11838015B2 (en) | Driving method and driving circuit | |
US20230089458A1 (en) | Active gate driver for wide band gap power semiconductor devices | |
US7236340B2 (en) | Gate control circuit for prevention of turn-off avalanche of power MOSFETs | |
LAUDATU et al. | EXPERIMENTAL ANALYSIS OF POWER SEMICONDUCTOR ELEMENTS USED IN FLYBACK CONVERTERS |