YU36420B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
YU36420B
YU36420B YU00206/71A YU20671A YU36420B YU 36420 B YU36420 B YU 36420B YU 00206/71 A YU00206/71 A YU 00206/71A YU 20671 A YU20671 A YU 20671A YU 36420 B YU36420 B YU 36420B
Authority
YU
Yugoslavia
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
YU00206/71A
Other languages
English (en)
Other versions
YU20671A (en
Inventor
Katnack Leroy Fredrich
Leroy Fredrich Katnack
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of YU20671A publication Critical patent/YU20671A/xx
Publication of YU36420B publication Critical patent/YU36420B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides
YU00206/71A 1970-10-29 1971-01-29 Semiconductor device YU36420B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8495870A 1970-10-29 1970-10-29

Publications (2)

Publication Number Publication Date
YU20671A YU20671A (en) 1981-11-13
YU36420B true YU36420B (en) 1983-06-30

Family

ID=22188279

Family Applications (1)

Application Number Title Priority Date Filing Date
YU00206/71A YU36420B (en) 1970-10-29 1971-01-29 Semiconductor device

Country Status (6)

Country Link
US (1) US3667008A (https=)
JP (1) JPS5038553B1 (https=)
BE (1) BE761668A (https=)
DE (1) DE2101609C3 (https=)
GB (1) GB1296951A (https=)
YU (1) YU36420B (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909319A (en) * 1971-02-23 1975-09-30 Shohei Fujiwara Planar structure semiconductor device and method of making the same
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
US4106051A (en) * 1972-11-08 1978-08-08 Ferranti Limited Semiconductor devices
US3886578A (en) * 1973-02-26 1975-05-27 Multi State Devices Ltd Low ohmic resistance platinum contacts for vanadium oxide thin film devices
US3860945A (en) * 1973-03-29 1975-01-14 Rca Corp High frequency voltage-variable capacitor
US4042953A (en) * 1973-08-01 1977-08-16 Micro Power Systems, Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
US4096510A (en) * 1974-08-19 1978-06-20 Matsushita Electric Industrial Co., Ltd. Thermal printing head
US3988759A (en) * 1974-08-26 1976-10-26 Rca Corporation Thermally balanced PN junction
US4152823A (en) * 1975-06-10 1979-05-08 Micro Power Systems High temperature refractory metal contact assembly and multiple layer interconnect structure
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
JPS5917852B2 (ja) * 1977-02-07 1984-04-24 日本電気株式会社 半導体装置
US4265935A (en) * 1977-04-28 1981-05-05 Micro Power Systems Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
US4234889A (en) * 1977-05-31 1980-11-18 Texas Instruments Incorporated Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
US4240097A (en) * 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
US4209716A (en) * 1977-05-31 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor
DE2926874A1 (de) * 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
EP0030147B1 (en) * 1979-11-29 1983-05-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor integrated circuit
DE3135007A1 (de) * 1981-09-04 1983-03-24 Licentia Gmbh Mehrschichtenkontakt fuer eine halbleiteranordnung
JPS5921034A (ja) * 1982-07-27 1984-02-02 Toshiba Corp 半導体装置
US4888297A (en) * 1982-09-20 1989-12-19 International Business Machines Corporation Process for making a contact structure including polysilicon and metal alloys
DE3688711T2 (de) * 1985-03-07 1993-12-16 Toshiba Kawasaki Kk Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung.
US5280188A (en) * 1985-03-07 1994-01-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors
US4794093A (en) * 1987-05-01 1988-12-27 Raytheon Company Selective backside plating of gaas monolithic microwave integrated circuits
US4949162A (en) * 1987-06-05 1990-08-14 Hitachi, Ltd. Semiconductor integrated circuit with dummy pedestals
FR2618254B1 (fr) * 1987-07-16 1990-01-05 Thomson Semiconducteurs Procede et structure de prise de contact sur des plots de circuit integre.
JP2894777B2 (ja) * 1990-03-02 1999-05-24 日本電気株式会社 半導体装置
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
US5567988A (en) * 1993-08-13 1996-10-22 Lsi Logic Corporation Integrated circuit interconnect structure with back reflection suppressing electronic "speed bumps"
DE69321965T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Leistungs-Chip-Typ und Packungszusammenbau
EP0660402B1 (en) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power semiconductor device
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
US5767546A (en) * 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3443175A (en) * 1967-03-22 1969-05-06 Rca Corp Pn-junction semiconductor with polycrystalline layer on one region
US3460007A (en) * 1967-07-03 1969-08-05 Rca Corp Semiconductor junction device
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3559003A (en) * 1969-01-03 1971-01-26 Ibm Universal metallurgy for semiconductor materials

Also Published As

Publication number Publication date
DE2101609A1 (de) 1972-05-04
JPS5038553B1 (https=) 1975-12-10
YU20671A (en) 1981-11-13
GB1296951A (https=) 1972-11-22
US3667008A (en) 1972-05-30
BE761668A (fr) 1971-06-16
DE2101609C3 (de) 1974-01-10
DE2101609B2 (de) 1973-06-20

Similar Documents

Publication Publication Date Title
YU20671A (en) Semiconductor device
MY7500147A (en) Shielded semiconductor device
GB1343174A (en) Semiconductor devices
MY7400218A (en) Semiconductor device fabrication
HK59376A (en) Semiconductor integrated device
ZA714756B (en) Semiconductor memory device
AU463404B2 (en) Semiconductor device
GB1349276A (en) Semiconductor device
HK58776A (en) Semiconductor devices
CA859934A (en) Semiconductor device
JPS5456387A (en) Semiconductor
ZA715975B (en) Semiconductor device
HK58676A (en) Semiconductor devices
ZA708005B (en) Semiconductor device
JPS56153748A (en) Integrated semiconductor device
AU440815B2 (en) Semiconductor device
CA852386A (en) Semiconductor device
AU437725B2 (en) Semiconductor device
CA848635A (en) Semiconductor device
AU450214B2 (en) Semiconductor device
AU451529B2 (en) Semiconductor device
AU461330B2 (en) Semiconductor device
CA859338A (en) Semiconductor device
CA858746A (en) Semiconductor device
CA832684A (en) Semiconductor device