WO2025213359A1 - 发光组件及其制作方法和车灯 - Google Patents

发光组件及其制作方法和车灯

Info

Publication number
WO2025213359A1
WO2025213359A1 PCT/CN2024/086798 CN2024086798W WO2025213359A1 WO 2025213359 A1 WO2025213359 A1 WO 2025213359A1 CN 2024086798 W CN2024086798 W CN 2024086798W WO 2025213359 A1 WO2025213359 A1 WO 2025213359A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
electrode
emitting
encapsulation layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/086798
Other languages
English (en)
French (fr)
Inventor
霍堡垒
马天阳
唐国强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to PCT/CN2024/086798 priority Critical patent/WO2025213359A1/zh
Priority to CN202480000701.7A priority patent/CN121844735A/zh
Publication of WO2025213359A1 publication Critical patent/WO2025213359A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • Embodiments of the present disclosure relate to a light-emitting assembly, a manufacturing method thereof, and a vehicle lamp.
  • OLED organic light emitting diode
  • OLED technology boasts autonomous and controllable pixel circuits and pixel-level light-emitting units, making it suitable for taillights. OLED technology not only fulfills the safety warning function of traditional taillights, but also allows taillights to display text, significantly expanding their potential applications.
  • Traditional taillights typically utilize one or several large bulbs to provide safety warnings, while pixel-matrix taillights, comprised of numerous light-emitting units, not only provide safety warnings but also display personalized patterns. The more light-emitting units, the greater the variety and sophistication of displayed patterns.
  • the embodiments of the present disclosure provide a light-emitting component, a manufacturing method thereof, and a vehicle lamp.
  • the light-emitting component can, on the one hand, balance the transmittance and reflectivity of the auxiliary electrode to ensure the life and brightness of the light-emitting component; on the other hand, it can also achieve a transparent effect and expand the application effect of the light-emitting component; on the other hand, the light-emitting component can also reduce resistance, reduce cross-voltage, and increase the life of the light-emitting component.
  • At least one embodiment of the present disclosure provides a light-emitting component, comprising a substrate and a light-emitting device disposed on the substrate, wherein the light-emitting device comprises: a first electrode; a light-emitting defining layer disposed on a side of the first electrode away from the substrate and comprising a light-emitting opening exposing the first electrode; a light-emitting functional layer disposed on a side of the light-emitting defining layer away from the substrate; a second electrode disposed on a side of the light-emitting functional layer away from the first electrode; and
  • the auxiliary electrode is arranged on a side of the second electrode away from the light-emitting functional layer, wherein the light-emitting functional layer includes a light-emitting functional portion, and the light-emitting functional portion is arranged in the light-emitting opening and in contact with the exposed
  • the auxiliary electrode includes a light-transmitting opening, and the orthographic projection of the light-emitting functional portion on the base substrate overlaps with the orthographic projection of the light-emitting functional portion on the base substrate.
  • the ratio of the area of the orthographic projection of the light-transmitting opening on the base substrate to the area of the orthographic projection of the light-emitting functional portion on the base substrate is not less than 1/5.
  • the light-emitting component provided in one embodiment of the present disclosure also includes an electrode patterned structure, wherein the electrode patterned structure is configured so that the material of the auxiliary electrode does not adhere to the electrode patterned structure, and the transmittance of the electrode patterned structure is not less than 50%, and the light-transmitting opening exposes at least a portion of the electrode patterned structure.
  • the material of the electrode patterned structure includes an organic fluorine-containing material.
  • the ratio of the size of the electrode patterned structure in a direction perpendicular to the base substrate to the size of the auxiliary electrode in a direction perpendicular to the base substrate ranges from 0.7 to 1.3.
  • the orthographic projection of the electrode patterned structure on the base substrate overlaps with the orthographic projection of the light-emitting functional portion on the base substrate.
  • the reflectivity of the auxiliary electrode is greater than the reflectivity of the second electrode.
  • the material of the second electrode includes aluminum, and the thickness of the second electrode ranges from 50 to 300 angstroms.
  • the material of the auxiliary electrode includes magnesium-silver alloy or magnesium-aluminum alloy, and the thickness of the auxiliary electrode ranges from 500 to 2000 angstroms.
  • the light-emitting component provided in one embodiment of the present disclosure also includes: a buffer layer, arranged on the base substrate; a metal wiring layer, arranged on a side of the buffer layer away from the base substrate; a passivation layer, arranged on a side of the metal wiring layer away from the base substrate and including a connection opening exposing the metal wiring layer; and a metal connection line, arranged in the connection opening and connected to the exposed metal wiring layer, wherein the metal connection line is connected to the first electrode.
  • the metal wiring layer includes multiple metal wirings, and the orthographic projection of the light-transmitting opening on the base substrate does not overlap with the orthographic projection of the multiple metal wirings on the base substrate.
  • the light emitting component provided in one embodiment of the present disclosure further includes an encapsulation layer provided on a side of the auxiliary electrode away from the second electrode, wherein the encapsulation layer includes a first inorganic encapsulation layer provided in a stacked manner.
  • the refractive index of the organic encapsulation layer is greater than that of the first inorganic encapsulation layer, and the refractive index of the second inorganic encapsulation layer is greater than that of the organic encapsulation layer.
  • the refractive index of the first inorganic encapsulation layer is greater than 1.4
  • the refractive index of the organic encapsulation layer is greater than 1.6
  • the refractive index of the second inorganic encapsulation layer is greater than 1.7.
  • the incident angle of light incident on the first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layer is ⁇
  • the thicknesses of the first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layer are d1, d2, and d3, respectively.
  • the light-emitting component in one embodiment of the present disclosure, it also includes: optical glue, which is arranged on the side of the packaging layer away from the second electrode; and a cover plate, which is arranged on the side of the optical glue away from the packaging layer, wherein the refractive index of the optical glue is greater than or equal to the refractive index of the second inorganic packaging layer.
  • At least one embodiment of the present disclosure provides a vehicle lamp comprising any of the aforementioned light-emitting components.
  • At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting component, comprising: forming a first electrode on the base substrate; forming a light-emitting defining layer on a side of the first electrode away from the base substrate, the light-emitting defining layer comprising a light-emitting opening exposing the first electrode; forming a light-emitting functional layer on a side of the light-emitting defining layer away from the base substrate; forming a second electrode on a side of the light-emitting functional layer away from the light-emitting defining layer; forming an auxiliary electrode on a side of the second electrode away from the light-emitting functional layer, the first electrode, the light-emitting defining layer, the light-emitting functional layer, the second electrode and the auxiliary electrode forming a light-emitting device located on the base substrate, the light-emitting functional layer comprising a light-emitting functional portion, the light-emitting functional portion being arranged in
  • the auxiliary electrode is formed on the side of the second electrode away from the light-emitting functional layer, including: forming an electrode patterned structure on the second electrode; and forming the auxiliary electrode including the light-transmitting opening on the second electrode, wherein the electrode patterned structure is configured so that the material of the auxiliary electrode does not adhere to the electrode patterned structure, and the transmittance of the electrode patterned structure is not less than 50%, and the light-transmitting opening exposes the electrode patterned structure.
  • the light-emitting component also includes an encapsulation layer arranged on the side of the auxiliary electrode away from the second electrode, the encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer arranged in a stacked manner, the organic encapsulation layer is arranged on the side of the first inorganic encapsulation layer away from the auxiliary electrode, and the second inorganic encapsulation layer is arranged on the side of the organic encapsulation layer away from the first inorganic encapsulation layer, and the manufacturing method also includes: using an atomic layer deposition process to form at least one of the first inorganic encapsulation layer and the second inorganic encapsulation layer.
  • FIG1 is a schematic structural diagram of an OLED taillight
  • FIG2 is a schematic diagram of the structure of another OLED taillight
  • FIG3A is a schematic structural diagram of another OLED taillight
  • FIG3B is a schematic diagram of the structure of another OLED taillight
  • FIG4 is a schematic structural diagram of a light-emitting assembly provided in one embodiment of the present disclosure.
  • FIG5 is a schematic diagram of implementing electrode patterning using an electrode patterning structure according to an embodiment of the present disclosure
  • FIG6 is a schematic diagram of a portion of the structure of the light emitting assembly shown in FIG4 cut along another direction;
  • FIG7 is a schematic structural diagram of an encapsulation layer provided in one embodiment of the present disclosure.
  • FIG8 is a schematic structural diagram of another encapsulation layer provided in one embodiment of the present disclosure.
  • FIG9 is a diagram showing the reliability test results of the encapsulation layer provided by an embodiment of the present disclosure.
  • FIG10A is a schematic diagram of the optical path of the optical assembly shown in FIG4 ;
  • FIG10B is a schematic diagram of light intensity superposition and light intensity cancellation provided by an embodiment of the present disclosure.
  • FIG11 is a schematic structural diagram of another light-emitting assembly provided in one embodiment of the present disclosure.
  • FIG12 is a schematic diagram of a vehicle lamp provided in one embodiment of the present disclosure.
  • FIG13 is a schematic structural diagram of another vehicle lamp provided by an embodiment of the present disclosure.
  • FIG14 is a method for manufacturing a light-emitting component provided in one embodiment of the present disclosure.
  • the features such as “parallel”, “perpendicular” and “same” used in the embodiments of the present disclosure include the cases of “parallel”, “perpendicular”, “same” in a strict sense, as well as the cases of “approximately parallel”, “approximately perpendicular”, “approximately the same” and the like which contain certain errors.
  • the above-mentioned “approximately” may mean that the difference between the compared objects is 10% of the average value of the compared objects, or within 5%.
  • the number of a component or element is not specifically indicated below in the embodiments of the present disclosure, it means that the component or element may be one or more, or may be understood as at least one.
  • At least one refers to one or more, and “multiple” refers to at least two.
  • the “same-layer arrangement” in the embodiments of the present disclosure refers to the relationship between multiple film layers formed by the same material after the same step (for example, a one-step patterning process).
  • the “same layer” here does not always mean that the thickness of multiple film layers is the same or the height of multiple film layers in the cross-sectional view is the same.
  • matrix taillights are generally light-emitting diode (LED) products. If OLED taillights are to be widely used, the following issues need to be addressed: 1. Brightness and lifespan; 2. Reliability of flexible OLED packaging; and 3. Heat generation of OLED devices.
  • LED light-emitting diode
  • FIG 1 is a schematic diagram of the structure of an OLED taillight.
  • the OLED taillight includes a rigid substrate 11 and an anode 12, a light-emitting functional layer 13, a cathode 14, and an encapsulation layer 15 sequentially stacked on the rigid substrate 11.
  • the rigid substrate 11 of the taillight shown in Figure 1 is a glass substrate, and the encapsulation layer 15 is sealed with molten glass powder (Frit Seal). Glass substrates cannot achieve a three-dimensional form and are difficult to meet the personalized needs of vehicle customers. The molten glass powder sealing technology has poor encapsulation effect.
  • the material of the cathode 14 is a magnesium-silver alloy
  • the sulfides generated by the vehicle exhaust will react with the magnesium-silver alloy, causing corrosion of the magnesium-silver alloy and the occurrence of dark spots and other undesirable phenomena.
  • FIG. 2 is a schematic diagram of the structure of another OLED taillight. As shown in Figure 2, this OLED taillight differs from the OLED taillight shown in Figure 1 in that the encapsulation layer 15 of the OLED taillight shown in Figure 2 is a TFE thin-film encapsulation layer formed using chemical vapor deposition (CVD). TFE thin-film encapsulation layers formed using chemical vapor deposition (CVD) have poor encapsulation performance.
  • the cathode 14 is made of a magnesium-silver alloy, sulfides generated by vehicle exhaust react with the alloy, causing corrosion and the appearance of dark spots and other undesirable phenomena.
  • FIG 3A is a schematic diagram of the structure of another OLED taillight.
  • this OLED taillight includes a flexible substrate 16, a buffer layer 17, an anode 12, a light-emitting functional layer 13, a cathode 14, and an encapsulation layer 15.
  • the cathode 14 of the OLED taillight shown in Figure 3A is made of thin aluminum.
  • This OLED taillight is a bottom-emitting device, with light emitting from the flexible substrate 16. Due to the relatively low reflectivity of thin aluminum, some light is transmitted through the cathode, reducing the overall brightness and lifespan of the OLED taillight.
  • FIG 3B is a schematic diagram of the structure of another OLED taillight. As shown in Figure 3B , this OLED taillight differs from the one shown in Figure 3A in that the cathode of the OLED taillight in Figure 3B has been thickened. While increasing the thickness of the aluminum layer effectively improves its reflectivity, it significantly reduces the deposition time and leads to significant production loss. Furthermore, low cathode transmittance can lead to significant cathode heating, shortening the lifespan of the OLED taillight.
  • the embodiment of the present disclosure provides a light-emitting component, a manufacturing method thereof, and a vehicle lamp.
  • the light-emitting component includes a substrate and a light-emitting device disposed on the substrate.
  • the light-emitting device includes a first electrode, a light-emitting defining layer, a light-emitting functional layer, a second electrode, and an auxiliary electrode.
  • the light-emitting defining layer is disposed on a side of the first electrode away from the substrate and includes a light-emitting opening exposing the first electrode.
  • the light-emitting functional layer is disposed on a side of the light-emitting defining layer away from the substrate.
  • the second electrode is disposed on a side of the light-emitting functional layer away from the first electrode.
  • the auxiliary electrode The electrode is disposed on a side of the second electrode away from the light-emitting functional layer.
  • the light-emitting functional layer includes a light-emitting functional portion disposed within the light-emitting opening and in contact with the exposed first electrode.
  • the auxiliary electrode includes a light-transmitting opening, an orthographic projection of the light-transmitting opening on the base substrate overlapping an orthographic projection of the light-emitting functional portion on the base substrate.
  • an auxiliary electrode is provided on the side of the second electrode away from the light-emitting functional layer.
  • the provision of the auxiliary electrode can reduce resistance and cross-voltage, and ultimately achieve the technical effect of reducing temperature rise and increasing the life of the light-emitting component;
  • the provision of the auxiliary electrode can also avoid the formation of an overly thick second electrode, thereby reducing the time for forming the second electrode and reducing the production capacity loss of forming the second electrode;
  • a light-transmitting opening can be provided on the auxiliary electrode, thereby increasing the life and luminous brightness of the light-emitting component and expanding the application effect of the light-emitting component.
  • a light-transmitting opening is provided on the auxiliary electrode, and the orthographic projection of the light-transmitting opening on the base substrate overlaps with the orthographic projection of the light-emitting functional part on the base substrate. A portion of the light emitted by the light-emitting functional part can pass through the light-transmitting opening after passing through the second electrode.
  • the provision of the light-transmitting opening can improve the light transmittance of the auxiliary electrode, reduce the problem of electrode heating caused by the auxiliary electrode absorbing the light emitted by the light-emitting functional part, and thus reduce the impact of electrode heating on the life of the light-emitting component; the auxiliary electrode can also reflect the light emitted by the light-emitting functional part at other positions besides the light-transmitting opening, thereby ensuring the brightness of the light-emitting component. Therefore, the provision of the light-transmitting opening can balance the light transmittance and reflectivity of the auxiliary electrode, thereby ensuring the life and luminous brightness of the light-emitting component.
  • the light-transmitting opening increases the light transmittance of the auxiliary electrode. When the light-emitting component is not emitting light, the design of the light-emitting component away from the base substrate can also be seen through the auxiliary electrode, achieving a transparent effect, thereby expanding the application effect of the light-emitting component.
  • FIG4 is a schematic structural diagram of a light-emitting component provided by an embodiment of the present disclosure.
  • the light-emitting component 100 includes a base substrate 110 and a light-emitting device 120 arranged on the base substrate 110.
  • the light-emitting device 120 includes a first electrode 121, a light-emitting defining layer 122, a light-emitting functional layer 123, a second electrode 124 and an auxiliary electrode 125.
  • the light-emitting defining layer 122 is arranged on a side of the first electrode 121 away from the base substrate 110, and includes a light-emitting opening 1220 exposing the first electrode 121.
  • the light-emitting functional layer 123 is arranged on a side of the light-emitting defining layer 122 away from the base substrate 110.
  • the second electrode 124 is arranged on a side of the light-emitting functional layer 123 away from the first electrode 121.
  • the auxiliary electrode 125 is arranged on a side of the second electrode 124 away from the light-emitting functional layer 123.
  • the light-emitting functional layer 123 includes a light-emitting functional portion 1230.
  • the light-emitting functional portion 1230 is arranged in the light-emitting opening 1220 and is exposed.
  • the auxiliary electrode 125 is in contact with the first electrode 121.
  • the auxiliary electrode 125 includes a light-transmitting opening 1250, and the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 overlaps with the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110.
  • an auxiliary electrode 125 is provided on the side of the second electrode 124 away from the light-emitting functional layer 123.
  • the provision of the auxiliary electrode 125 can reduce resistance and cross-voltage, and ultimately achieve the technical effect of reducing temperature rise and increasing the life of the light-emitting component 100;
  • the provision of the auxiliary electrode 125 can also avoid the formation of an overly thick second electrode 124, thereby reducing the time for forming the second electrode 124 and reducing the production capacity loss of forming the second electrode 124;
  • a light-transmitting opening 1250 can be provided on the auxiliary electrode 125, thereby increasing the life and luminous brightness of the light-emitting component 100 and expanding the application effect of the light-emitting component 100.
  • the auxiliary electrode 125 is provided with a light-transmitting opening 1250.
  • the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 overlaps with the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110.
  • the provision of the light-transmitting opening 1250 improves the light transmittance of the auxiliary electrode 125 and reduces the heating of the auxiliary electrode 125 caused by absorbing light emitted by the light-emitting functional portion 1230, thereby reducing the impact of electrode heating on the lifespan of the light-emitting component 100.
  • the auxiliary electrode 125 can also reflect light emitted by the light-emitting functional portion 1230 at other locations, ensuring the brightness of the light-emitting component 100.
  • the provision of the light-transmitting opening 1250 balances the light transmittance and reflectivity of the auxiliary electrode 125, ensuring the lifespan and brightness of the light-emitting component 100. For example, by adjusting the size of the light-transmitting opening 1250, the luminous brightness can be maximized while ensuring the designed lifespan; or, alternatively, the service life can be maximized while ensuring the designed luminous brightness.
  • the light-emitting functional portion 1230 generates electroluminescence under the action of the first electrode 121, the second electrode 124, and the auxiliary electrode 124, and the light is emitted from the side of the base substrate 110, which is also called bottom emission.
  • the light-transmitting opening 1250 increases the light transmittance of the auxiliary electrode 125.
  • the shape design of the light-emitting component 100 away from the base substrate 110 can be seen through the auxiliary electrode 125, achieving a transparent effect, thereby expanding the application effect of the light-emitting component 100.
  • the ratio of the area of the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 to the area of the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110 is not less than 1/5.
  • the size of the light-transmitting opening 1250 can be designed according to the requirements of the luminous brightness, lifespan, or shape of the light-emitting component 100, and this is not limited in the embodiments of the present disclosure.
  • the ratio can be not less than 1/4.
  • the ratio can be not less than 1/3.
  • the ratio can be not less than 1/2.
  • the ratio may be equal to 1.
  • the ratio may be greater than 1.
  • the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 may fall within the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110.
  • the ratio is greater than 1, the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110 may fall within the orthographic projection of the light-transmitting opening 1250 on the base substrate 110.
  • the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 overlaps with the orthographic projection of the first electrode 121 on the base substrate 110.
  • the ratio of the area of the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 to the area of the orthographic projection of the first electrode 121 on the base substrate 110 is not less than 1/5.
  • the ratio may be not less than 1/4.
  • the ratio may be not less than 1/3.
  • the ratio may be not less than 1/2.
  • the ratio may be equal to 1.
  • the ratio may be greater than 1.
  • the disclosed embodiments do not limit the value of this ratio.
  • the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 may fall within the orthographic projection of the first electrode 121 on the base substrate 110.
  • the ratio is greater than 1, the orthographic projection of the first electrode 121 on the base substrate 110 may fall within the orthographic projection of the light-transmitting opening 1250 on the base substrate 110.
  • the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 overlaps with the orthographic projection of the light-emitting opening 1220 on the base substrate 110.
  • the ratio of the area of the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 to the area of the orthographic projection of the light-emitting opening 1220 on the base substrate 110 is not less than 1/5.
  • the ratio may be not less than 1/4.
  • the ratio may be not less than 1/3.
  • the ratio may be not less than 1/2.
  • the ratio may be equal to 1.
  • the ratio may be greater than 1.
  • the disclosed embodiments do not limit the value of this ratio.
  • the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 may fall within the orthographic projection of the light-emitting opening 1220 on the base substrate 110.
  • the ratio is greater than 1, the orthographic projection of the light-emitting opening 1220 on the base substrate 110 may fall within the orthographic projection of the light-transmitting opening 1250 on the base substrate 110.
  • the center of the orthographic projection of the light-transmitting opening on the base substrate substantially coincides with the center of the orthographic projection of the light-emitting functional portion on the base substrate.
  • the center of the orthographic projection of the light-transmitting opening on the base substrate substantially coincides with the center of the orthographic projection of the first electrode on the base substrate.
  • the center of the orthographic projection of the light-transmitting opening on the base substrate substantially coincides with the center of the orthographic projection of the light-emitting opening on the base substrate.
  • the shape of the outer contour of the orthographic projection of the light-transmitting opening on the substrate is substantially the same as the shape of the outer contour of the orthographic projection of the light-emitting functional portion on the substrate.
  • the shape of the outer contour of the orthographic projection of the light-transmitting opening on the substrate is substantially the same as the shape of the outer contour of the orthographic projection of the first electrode on the substrate.
  • the shape of the outer contour of the orthographic projection of the light-transmitting opening on the substrate is substantially the same as the shape of the outer contour of the orthographic projection of the light-emitting functional portion on the substrate.
  • the shapes of the outer contours on the base substrate are substantially the same.
  • the shape of the orthographic projection of the light-transmitting opening on the substrate includes square, circle, ellipse, polygon or ring, etc.
  • the embodiment of the present disclosure does not limit the shape and size of the light-transmitting opening.
  • the light-emitting component 100 also includes an electrode patterned structure 130, which is configured so that the material of the auxiliary electrode 125 does not adhere to the electrode patterned structure 130, and the transmittance of the electrode patterned structure 130 is not less than 50%, and the light-transmitting opening 1250 exposes at least a portion of the electrode patterned structure 130.
  • the material of the auxiliary electrode 125 does not adhere to the electrode patterned structure 130, the material of the electrode patterned structure 130 does not stick to the material of the auxiliary electrode 125.
  • the material of the auxiliary electrode 125 is difficult to adhere to the location where the electrode patterned structure 130 is present, thereby enabling patterning of the auxiliary electrode 125.
  • the electrode patterned structure 130 allows for a simple and convenient formation of a light-transmitting opening 1250 at the location where the electrode patterned structure 130 is located. This simplifies the process and avoids the adverse effects on the auxiliary electrode 125 caused by forming the light-transmitting opening 1250 on the auxiliary electrode 125 using other methods.
  • the electrode patterned structure 130 can make the film layer where the auxiliary electrode 125 is located more flat, making the subsequent packaging process more stable and reliable.
  • the material of the auxiliary electrode 125 is not attached to the electrode patterned structure 130, including the situation that the material of the auxiliary electrode 125 is difficult or not easy to attach to the electrode patterned structure 130. At this time, there may be very little material of the auxiliary electrode 125 on the electrode patterned structure 130; it also includes the situation that the material of the auxiliary electrode 125 cannot be attached to the electrode patterned structure 130. At this time, there is no material of the auxiliary electrode 125 on the electrode patterned structure 130.
  • an electrode patterning structure may be formed on the second electrode first, and then the auxiliary electrode may be formed. Since the material of the auxiliary electrode does not adhere to the electrode patterning structure, a light-transmitting opening may be formed at the location where the electrode patterning structure is formed.
  • the preparation process of the electrode patterning structure may include evaporation.
  • the light-transmitting opening 1250 may expose a portion of the electrode patterned structure 130.
  • the light-transmitting opening 1250 may completely expose the electrode patterned structure 130.
  • at least a portion of the electrode patterned structure 130 may be located within the light-transmitting opening 1250.
  • the electrode patterned structure 130 may be completely located within the light-transmitting opening 1250.
  • the orthographic projection of the electrode patterned structure on the substrate may overlap with the orthographic projection of the light-transmitting opening on the substrate.
  • the orthographic projection of the electrode patterned structure on the substrate may fall within the orthographic projection of the light-transmitting opening on the substrate.
  • the orthographic projection of the electrode patterned structure 130 on the substrate 110 is The orthographic projections of the light-emitting functional portion 1230 on the base substrate 110 overlap.
  • the ratio of the area of the orthographic projection of the electrode patterned structure 130 on the base substrate 110 to the area of the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110 is not less than 1/5.
  • the ratio may be not less than 1/4.
  • the ratio may be not less than 1/3.
  • the ratio may be not less than 1/2.
  • the ratio may be equal to 1.
  • the ratio may be greater than 1.
  • the embodiment of the present disclosure does not limit the numerical value of the ratio.
  • the orthographic projection of the electrode patterned structure 130 on the base substrate 110 may fall within the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110.
  • the ratio is greater than 1, the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110 may fall within the orthographic projection of the electrode patterned structure 130 on the base substrate 110.
  • the orthographic projection of the electrode patterned structure 130 on the substrate 110 overlaps with the orthographic projection of the first electrode 121 on the substrate 110.
  • the ratio of the area of the orthographic projection of the electrode patterned structure 130 on the substrate 110 to the area of the orthographic projection of the first electrode 121 on the substrate 110 is not less than 1/5.
  • the ratio may be not less than 1/4.
  • the ratio may be not less than 1/3.
  • the ratio may be not less than 1/2.
  • the ratio may be equal to 1.
  • the ratio may be greater than 1.
  • the embodiment of the present disclosure does not limit the value of the ratio.
  • the orthographic projection of the electrode patterned structure 130 on the substrate 110 may fall within the orthographic projection of the first electrode 121 on the substrate 110.
  • the ratio is greater than 1, the orthographic projection of the first electrode 121 on the substrate 110 may fall within the orthographic projection of the electrode patterned structure 130 on the substrate 110.
  • the orthographic projection of the electrode patterned structure 130 on the base substrate 110 overlaps with the orthographic projection of the light-emitting opening 1220 on the base substrate 110.
  • the ratio of the area of the orthographic projection of the electrode patterned structure 130 on the base substrate 110 to the area of the orthographic projection of the light-emitting opening 1220 on the base substrate 110 is not less than 1/5.
  • the ratio may be not less than 1/4.
  • the ratio may be not less than 1/3.
  • the ratio may be not less than 1/2.
  • the ratio may be equal to 1.
  • the ratio may be greater than 1.
  • the embodiment of the present disclosure does not limit the value of the ratio.
  • the orthographic projection of the electrode patterned structure 130 on the base substrate 110 may fall within the orthographic projection of the light-emitting opening 1220 on the base substrate 110.
  • the ratio is greater than 1, the orthographic projection of the light-emitting opening 1220 on the base substrate 110 may fall within the orthographic projection of the electrode patterned structure 130 on the base substrate 110.
  • the center of the orthographic projection of the electrode pattern structure on the substrate is roughly coincident with the center of the orthographic projection of the light-emitting functional portion on the substrate.
  • the center of the projection roughly coincides with the center of the orthographic projection of the first electrode on the substrate.
  • the center of the orthographic projection of the electrode patterned structure on the substrate roughly coincides with the center of the orthographic projection of the light-emitting opening on the substrate.
  • the shape of the outer contour of the orthographic projection of the electrode patterned structure on the substrate is substantially the same as the shape of the outer contour of the orthographic projection of the light-emitting functional portion on the substrate.
  • the shape of the outer contour of the orthographic projection of the electrode patterned structure on the substrate is substantially the same as the shape of the outer contour of the orthographic projection of the first electrode on the substrate.
  • the shape of the outer contour of the orthographic projection of the electrode patterned structure on the substrate is substantially the same as the shape of the outer contour of the orthographic projection of the light-emitting opening on the substrate.
  • the shape of the orthographic projection of the electrode patterned structure on the substrate includes square, circle, ellipse, polygon or ring, etc.
  • the embodiment of the present disclosure does not limit the shape and size of the light-transmitting opening.
  • the material of the auxiliary electrode is magnesium, silver or magnesium-silver alloy
  • the material of the electrode patterned structure does not stick to magnesium, silver or magnesium-silver alloy, and magnesium, silver or magnesium-silver alloy is difficult or impossible to adhere to the electrode patterned structure.
  • the material of the electrode patterned structure may be referred to as an electrode patterned material, and the material of the electrode patterned structure includes an organic fluorine-containing material.
  • the embodiment of the present disclosure does not limit the material of the electrode patterned structure.
  • the light transmittance of the electrode patterned structure is not less than 50%.
  • the light transmittance of the electrode patterned structure is not less than 60%.
  • the light transmittance of the electrode patterned structure is not less than 70%.
  • the light transmittance of the electrode patterned structure is not less than 80%.
  • the light transmittance of the electrode patterned structure is not less than 85%.
  • the light transmittance of the electrode patterned structure is not less than 90%.
  • the light transmittance of the electrode patterned structure is not less than 95%.
  • the ratio of the size of the electrode patterned structure 130 in a direction perpendicular to the base substrate 110 to the size of the auxiliary electrode 125 in a direction perpendicular to the base substrate 110 ranges from 0.7 to 1.3.
  • the ratio of the thickness of the electrode patterned structure 130 to the thickness of the auxiliary electrode 125 ranges from 0.7 to 1.3.
  • the size of the electrode patterned structure 130 in the direction perpendicular to the base substrate 110 may be equal to the size of the auxiliary electrode 125 in the direction perpendicular to the base substrate 110.
  • the embodiment of the present disclosure is not limited to this.
  • the size of the electrode patterned structure in the direction perpendicular to the base substrate may be smaller than the size of the auxiliary electrode in the direction perpendicular to the base substrate.
  • the size of the electrode patterned structure in the direction perpendicular to the base substrate may be larger than the size of the auxiliary electrode in the direction perpendicular to the base substrate.
  • the dimension in the direction of the substrate may be equal to the size of the auxiliary electrode 125 in the direction perpendicular to the base substrate 110.
  • the size of the electrode patterned structure in a direction perpendicular to the substrate is not less than 100 angstroms.
  • the size of the electrode patterned structure in a direction perpendicular to the substrate is not less than 150 angstroms.
  • the disclosed embodiments do not limit the size of the electrode patterned structure.
  • the size can be designed based on the material and thickness of the auxiliary electrode.
  • FIG. 5 is a schematic diagram illustrating electrode patterning using an electrode patterning structure, according to one embodiment of the present disclosure.
  • the hexagonal opening is a light-transmitting opening 1250.
  • the electrode patterning structure 130 Within light-transmitting opening 1250 is the electrode patterning structure 130, and outside light-transmitting opening 1250 is the electrode.
  • the electrode material is a magnesium-silver alloy.
  • electrode patterning can be easily and conveniently achieved using electrode patterning structure 130.
  • the auxiliary electrode has a greater reflectivity than the second electrode.
  • the auxiliary electrode's greater reflectivity can improve its reflection of light.
  • a light-transmitting opening is provided on the auxiliary electrode, allowing some light to pass through.
  • increasing the reflectivity of the auxiliary electrode can increase the brightness of the light-emitting component.
  • increasing the reflectivity of the auxiliary electrode can correspondingly increase the size of the light-transmitting opening, thereby increasing the life of the light-emitting component and further expanding the application effect of the light-emitting component.
  • the thickness of the auxiliary electrode can be reduced accordingly, thereby reducing the time required to form the auxiliary electrode and reducing the production capacity loss in forming the auxiliary electrode.
  • the chemical stability of the second electrode is superior to that of the auxiliary electrode.
  • the chemical stability of the second electrode is superior to that of the auxiliary electrode.
  • the material of the second electrode includes aluminum.
  • the disclosed embodiments do not limit the material of the second electrode.
  • the material of the second electrode may also be silver, magnesium, magnesium-silver alloy, magnesium-aluminum alloy, lithium, lithium-doped alloy, indium tin oxide (ITO), zinc tin oxide (ZnSnO), fluorine-doped tin oxide (FTO), etc.
  • the thickness of the second electrode ranges from 50 to 300 angstroms.
  • the material of the auxiliary electrode includes magnesium-silver alloy or magnesium-aluminum alloy.
  • the embodiment of the present disclosure does not limit the material of the auxiliary electrode.
  • the material of the auxiliary electrode can also be silver, magnesium, magnesium-silver alloy, Magnesium-aluminum alloy, lithium, lithium-doped alloy, etc.
  • the thickness of the auxiliary electrode ranges from 500 to 2000 angstroms.
  • the material of the first electrode includes indium tin oxide (ITO).
  • ITO indium tin oxide
  • the first electrode may be an anode.
  • the second electrode may be a cathode.
  • the auxiliary electrode may be an auxiliary cathode.
  • the light-emitting functional portion is configured to emit red light.
  • the embodiment of the present disclosure is not limited to this, and other colors of light may also be emitted.
  • the light-emitting component 100 further includes a buffer layer 140, a metal trace layer 145, a passivation layer 150, and a metal connection line 155.
  • the buffer layer 140 is disposed on the base substrate 110
  • the metal trace layer 145 is disposed on a side of the buffer layer 140 away from the base substrate 110
  • the passivation layer 150 is disposed on a side of the metal trace layer 145 away from the base substrate 110, and includes a connection opening 1500 exposing the metal trace layer 145.
  • the metal connection line 155 is disposed within the connection opening 1500 and connected to the exposed metal trace layer 145.
  • the metal connection line 155 is connected to the first electrode 121.
  • the metal trace layer 145 is connected to the first electrode 121 via the metal connection line 155, so that the light emission of the light-emitting component 100 can be controlled through the metal trace layer 145 and the metal connection line 155.
  • Fig. 6 is a schematic diagram of a portion of the structure of the light emitting component shown in Fig. 4 cut along another direction. As shown in Fig. 6 , the metal connecting wire 155 of the light emitting component 100 is connected to the first electrode 121 .
  • the metal connection line 155 and the first electrode 121 are formed of the same material and undergo the same patterning process, thereby achieving connection between the metal connection line 155 and the first electrode 121.
  • the embodiment of the present disclosure is not limited to this.
  • the metal wiring layer 145 includes a plurality of metal wirings 1450 , and the first electrode 121 is spaced apart from the metal wirings 1450 .
  • the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 does not overlap with the orthographic projection of the plurality of metal traces 1450 on the base substrate 110 .
  • the base substrate may be a rigid base substrate, such as a glass base substrate, etc.
  • the base substrate may also be a flexible base substrate, such as a polyimide substrate, etc., which is not limited in this application.
  • the light emitting component 100 further includes an encapsulation layer 160 disposed on a side of the auxiliary electrode 125 away from the second electrode 124, the encapsulation layer 160 includes a first inorganic encapsulation layer 161, an organic encapsulation layer 162, and a second inorganic encapsulation layer 163 stacked, the organic encapsulation layer 162 being disposed on a side of the first inorganic encapsulation layer 161 away from the auxiliary electrode 125, the second inorganic encapsulation layer 163 being disposed on a side of the organic encapsulation layer 162 away from the first inorganic encapsulation layer 161, and the first inorganic encapsulation layer 161 and the second inorganic encapsulation layer 163 being disposed on a side of the organic encapsulation layer 162 away from the first inorganic encapsulation layer 161.
  • the thickness uniformity of at least one layer of the inorganic encapsulation layer 163 is not
  • FIG7 is a schematic diagram of the structure of an encapsulation layer provided in accordance with an embodiment of the present disclosure.
  • the top thickness of the encapsulation layer 160 at the top edge is Dt
  • the side thickness at the side edge is Ds
  • the bottom thickness at the bottom edge is Db.
  • the thickness uniformity of the encapsulation layer 160 includes the side thickness uniformity and the bottom thickness uniformity.
  • the side thickness uniformity is the ratio of the side thickness Ds to the top thickness Dt
  • the bottom thickness uniformity is the ratio of the bottom thickness Db to the top thickness Dt.
  • the encapsulation layer 160 can have better filling and climbing properties, and thus better packaging and coverage. For example, it can better encapsulate particulate matter introduced during the production line or during the evaporation of the second electrode 124, and can effectively prevent the intrusion of water, oxygen, and sulfide in the external environment, thereby significantly improving the reliability of the encapsulation. For example, when the optical component is used in a car taillight, the better encapsulation effect can better prevent the intrusion of automobile exhaust, thereby increasing the service life of the optical component and the car taillight.
  • At least one of the first inorganic encapsulation layer and the second inorganic encapsulation layer includes three cases: the first inorganic encapsulation layer, the second inorganic encapsulation layer, and the first inorganic encapsulation layer and the second inorganic encapsulation layer, which are not described one by one here.
  • the thickness uniformity of at least one of the first inorganic encapsulation layer and the second inorganic encapsulation layer is not less than 70%.
  • the thickness uniformity of at least one of the first inorganic encapsulation layer and the second inorganic encapsulation layer is not less than 80%.
  • the thickness uniformity of at least one of the first inorganic encapsulation layer and the second inorganic encapsulation layer is not less than 90%.
  • the thickness uniformity of at least one of the first inorganic encapsulation layer and the second inorganic encapsulation layer is not less than 95%.
  • At least one of the first and second inorganic encapsulation layers can be formed using an atomic layer deposition (ALD) process.
  • ALD atomic layer deposition
  • the ALD process offers improved filling performance and can deposit a highly uniform and dense thin film layer on uneven surfaces. Compared to conventional encapsulation processes, the thickness uniformity can be significantly improved, for example, reaching over 90% or even over 95%.
  • FIG8 is a schematic diagram of the structure of another encapsulation layer provided by an embodiment of the present disclosure.
  • a uniform and dense encapsulation layer 02 is formed on the non-flat surface of the film layer 01.
  • the encapsulation layer 02 not only has better thickness uniformity, but also can better fill the non-flat surface.
  • the encapsulation layer 02 can be the first inorganic encapsulation layer and/or the second inorganic encapsulation layer described above.
  • the film layer 01 may be the auxiliary electrode or organic encapsulation layer mentioned above. It should be noted that in order to more clearly demonstrate the filling effect of the encapsulation layer, the film layer 01 and the encapsulation layer 02 in the figure are both shown as microscopic particles.
  • the surface of the film layer 01 includes microchannels 011, and the encapsulation layer 02 is partially located within the microchannels 011.
  • the film layer 01 can better fill the microchannels 011 on the uneven surface.
  • the encapsulation layer further includes a third inorganic encapsulation layer disposed between the first inorganic encapsulation layer and the organic encapsulation layer. This is not limited in the present embodiment.
  • FIG9 is a diagram showing the reliability test results of the encapsulation layer provided by an embodiment of the present disclosure.
  • the encapsulation layer of the first scheme includes an inorganic encapsulation layer, an organic encapsulation layer, and an inorganic encapsulation layer stacked in sequence. Both inorganic encapsulation layers are thin-film encapsulation layers formed by chemical vapor deposition, and the organic encapsulation layer is formed by inkjet printing with a thickness of 8 ⁇ m.
  • the encapsulation layer of the second scheme includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked in sequence.
  • the first inorganic encapsulation layer is a thin-film encapsulation layer formed by atomic layer deposition
  • the second inorganic encapsulation layer is a thin-film encapsulation layer formed by chemical vapor deposition.
  • the material of the first inorganic encapsulation layer is aluminum oxide (Al 2 O 3 ), with a thickness of 50nm
  • the material of the second inorganic encapsulation layer is silicon nitride (SiNx), with a thickness of 600nm
  • the organic encapsulation layer is formed by inkjet printing process, with a thickness of 8 ⁇ m
  • the encapsulation layer of scheme three includes a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer stacked in sequence
  • the first inorganic encapsulation layer is a thin film encapsulation layer formed by atomic layer deposition process
  • the second inorganic encapsulation layer is a thin film encapsulation layer
  • the first inorganic encapsulation layer of Scheme 1 is a thin film encapsulation layer formed by chemical vapor deposition
  • the first inorganic encapsulation layers of Schemes 2, 3, and 4 are all thin film encapsulation layers formed by atomic layer deposition.
  • the failure time of Schemes 2, 3, and 4 is higher than that of Scheme 1 under the same test time.
  • the failure time of Scheme 3 is twice that of Scheme 1, which better improves the encapsulation layer.
  • Scheme 4 adds a third inorganic encapsulation layer compared to Scheme 3, and Scheme 4 has a further improvement in failure time compared to Scheme 3.
  • Scheme 1 uses aluminum oxide ( Al2O3 ) as the material for the first inorganic encapsulation layer, and after a test time of 1000 hours, no failure occurred. Therefore, the encapsulation layer of the embodiment of the present disclosure has better reliability.
  • the refractive index of the organic encapsulation layer is greater than that of the first inorganic encapsulation layer, and the refractive index of the second inorganic encapsulation layer is greater than that of the organic encapsulation layer.
  • This utilizes the condition of total internal reflection of light, which occurs when light propagates from a medium with a low refractive index to a medium with a high refractive index. This not only improves the reflectivity of light propagation, thereby increasing the brightness and luminous efficiency of the light-emitting component, but also reduces the temperature rise of the second electrode and auxiliary electrode, thereby increasing the lifespan of the light-emitting component.
  • the refractive index of the first inorganic encapsulation layer is greater than 1.4
  • the refractive index of the organic encapsulation layer is greater than 1.6
  • the refractive index of the second inorganic encapsulation layer is greater than 1.7.
  • the present disclosure does not limit the refractive indices of the first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layer, and they can be selected based on the material.
  • Figure 10A is a schematic diagram of the optical path of the optical assembly shown in Figure 4.
  • the thickness of the first inorganic encapsulation layer 161 is d1.
  • the incident angle of light incident on the first inorganic encapsulation layer 161 is ⁇ .
  • ⁇ is the wavelength of the light
  • ⁇ ranges from 0 degrees to 90 degrees
  • k is an integer greater than or equal to 0.
  • the thickness of the first inorganic encapsulation layer 161 can be set according to the wavelength of the light or the value of k to maximize the reflected light, thereby improving the propagation reflectivity of the light and enhancing the luminous brightness and luminous efficiency of the light-emitting assembly 100.
  • the embodiments of the present disclosure are not limited to this.
  • d1sin ⁇ ⁇ (2k+1) ⁇ /2
  • the interference of the light causes the light intensities to cancel each other out, and the reflected light is the weakest.
  • d1sin ⁇ can also be set to be different from ⁇ (2k+1) ⁇ /2 to adjust the thickness of the first inorganic encapsulation layer 161.
  • ⁇ may be the wavelength of red light.
  • FIG10B is a schematic diagram of light intensity superposition and light intensity cancellation provided by an embodiment of the present disclosure.
  • interference occurs.
  • the phase difference between light a1 and light a2 is an integer multiple of the wavelength
  • the interference of light causes the light intensity to superimpose, and at this time, the light intensity of light a3 after interference is the strongest.
  • the phase difference between light b1 and light b2 is (2k+1)/2 times the wavelength
  • the interference of light causes the light intensity to cancel, and at this time, the light intensity of light b3 after interference is the weakest.
  • the thickness of the organic encapsulation layer 162 is d2, and the incident angle to the organic encapsulation layer 162 is ⁇ .
  • the thickness of the organic encapsulation layer 162 can be set according to the wavelength of light or the value of k to make the reflected light the strongest, thereby improving the propagation reflectivity of the light and improving the light emitting group.
  • the luminous brightness and luminous efficiency of the device 100 are improved.
  • the embodiment of the present disclosure is not limited to this.
  • d2sin ⁇ may be set to be different from ⁇ (2k+1) ⁇ /2 to adjust the thickness of the organic encapsulation layer 162.
  • the thickness of the second inorganic encapsulation layer 163 is d3, and the angle of incidence to the second inorganic encapsulation layer 163 is ⁇ .
  • the interference of light causes the light intensities to overlap with each other. At this time, the reflected light is the strongest.
  • the thickness of the second inorganic encapsulation layer 163 can be set according to the wavelength of light or the value of k, so that the reflected light is the strongest to increase the propagation reflectivity of light and improve the luminous brightness and luminous efficiency of the light-emitting component 100.
  • the embodiments of the present disclosure are not limited to this.
  • d3sin ⁇ can also be made not equal to ⁇ (2k+1) ⁇ /2 to set the thickness of the second inorganic encapsulation layer 163.
  • the embodiments of the present disclosure are not limited to this.
  • the light emitting component 100 further includes an optical adhesive 170 and a cover plate 180 .
  • the optical adhesive 170 is disposed on a side of the packaging layer 160 away from the second electrode 124
  • the cover plate 180 is disposed on a side of the optical adhesive 170 away from the packaging layer 160 .
  • the refractive index of the optical adhesive is greater than or equal to the refractive index of the second inorganic encapsulation layer.
  • the refractive index of the optical adhesive can be greater than the refractive index of the second inorganic encapsulation layer, thereby utilizing the principle of total reflection of light to increase the propagation reflectivity of light and improve the luminous brightness and luminous efficiency of the light-emitting component 100.
  • FIG11 is a schematic diagram of the structure of another light-emitting assembly provided by an embodiment of the present disclosure.
  • the light-emitting assembly 100 includes a substrate 110 and a light-emitting device 120 disposed on the substrate 110.
  • the light-emitting device 120 includes a first electrode 121, a light-emitting defining layer 122, a light-emitting functional layer 123, a second electrode 124, and an auxiliary electrode 125.
  • the light-emitting defining layer 122 is disposed on the first electrode 121 away from the substrate substrate.
  • the light-emitting component 100 is provided on one side of the substrate 110 and includes a light-emitting opening 1220 that exposes the first electrode 121.
  • the light-emitting functional layer 123 is provided on the side of the light-emitting defining layer 122 away from the base substrate 110.
  • the second electrode 124 is provided on the side of the light-emitting functional layer 123 away from the first electrode 121.
  • the auxiliary electrode 125 is provided on the side of the second electrode 124 away from the light-emitting functional layer 123.
  • the light-emitting functional layer 123 includes a light-emitting functional portion 1230, which is provided in the light-emitting opening 1220 and contacts the exposed first electrode 121.
  • the auxiliary electrode 125 includes a light-transmitting opening 1250, the orthographic projection of the light-transmitting opening 1250 on the base substrate 110 overlaps with the orthographic projection of the light-emitting functional portion 1230 on the base substrate 110.
  • the beneficial technical effects of the light-emitting component 100 are described above and will not be repeated here.
  • the light-transmitting opening in this example is the same as the light-transmitting opening in the previous text, and will not be described again here.
  • the auxiliary electrode may be formed first, and then the light-transmitting opening may be formed.
  • the present disclosure does not limit the process for forming the light-transmitting opening.
  • the light-transmitting opening may be formed using an etching process.
  • the light-transmitting opening may be formed using a laser etching process.
  • FIG. 12 is a schematic diagram of a vehicle lamp provided by an embodiment of the present disclosure.
  • vehicle lamp 200 includes any of the aforementioned light-emitting assemblies 100.
  • vehicle lamp 200 exhibits the same beneficial technical effects as those of the aforementioned light-emitting assemblies 100, which are not further detailed here.
  • the vehicle light may be a taillight.
  • the vehicle light may be a car taillight.
  • the embodiments of the present disclosure are not limited to this.
  • FIG13 is a schematic diagram of the structure of another vehicle lamp provided by an embodiment of the present disclosure.
  • the vehicle lamp 200 further includes a light-transmitting component 210 and a base plate 220.
  • the light-emitting component 100 is disposed between the light-transmitting component 210 and the base plate 220.
  • the first electrode of the light-emitting component 100 is located on the side of the substrate away from the light-transmitting component 210.
  • the light emitted from the substrate by the light-transmitting component 210 passes through the light-transmitting component 210, so that the vehicle lamp 200 can emit light.
  • the figure only schematically shows the relative positional relationship of the light-emitting component 100, the light-transmitting component 210 and the base plate 220, and does not limit the connection relationship, shape, distance, size, etc. of the light-emitting component 100, the light-transmitting component 210 and the base plate 220.
  • the bottom plate 220 includes a texture 221.
  • the auxiliary electrode of the light-emitting component 100 includes a light-transmitting opening
  • light from the outside of the car lamp 200 passes through the light-transmitting component 210 and the light-transmitting opening of the light-emitting component 100 in sequence, and can be incident on the bottom plate 220.
  • the outside of the car lamp 200 is the side of the light-transmitting component 210 away from the light-emitting component 100. Therefore, the texture 221 of the bottom plate 220 can be seen from the outside of the car lamp 200, thereby expanding the application effect of the light-emitting component.
  • the figure only schematically shows that the bottom plate 220 includes the texture 221, and the shape of the texture 221 is not shown. The shape, style, and position on the base plate 220 are not limited.
  • the present disclosure also provides a method for manufacturing a light-emitting component.
  • FIG14 shows a method for manufacturing a light-emitting component provided by an embodiment of the present disclosure. As shown in FIG14 , the manufacturing method includes:
  • S200 forming a light-emitting defining layer on a side of the first electrode away from the substrate, wherein the light-emitting defining layer includes a light-emitting opening exposing the first electrode;
  • S400 forming a second electrode on a side of the light-emitting functional layer away from the light-emitting defining layer;
  • An auxiliary electrode is formed on a side of the second electrode away from the light-emitting functional layer, and the first electrode, the light-emitting defining layer, the light-emitting functional layer, the second electrode and the auxiliary electrode form a light-emitting device located on the base substrate.
  • the light-emitting functional layer includes a light-emitting functional part, which is arranged in the light-emitting opening and contacts the exposed first electrode.
  • the auxiliary electrode includes a light-transmitting opening, and the orthographic projection of the light-transmitting opening on the base substrate overlaps with the orthographic projection of the light-emitting functional part on the base substrate.
  • an auxiliary electrode is provided on the side of the second electrode away from the light-emitting functional layer.
  • the provision of the auxiliary electrode can reduce the resistance and the cross-voltage, and ultimately achieve the technical effect of reducing the temperature rise and increasing the life of the light-emitting component;
  • the provision of the auxiliary electrode can also avoid the formation of an overly thick second electrode, thereby reducing the time for forming the second electrode and reducing the production capacity loss of forming the second electrode;
  • a light-transmitting opening can be provided on the auxiliary electrode, thereby increasing the life and luminous brightness of the light-emitting component and expanding the application effect of the light-emitting component.
  • a light-transmitting opening is provided on the auxiliary electrode, and the orthographic projection of the light-transmitting opening on the base substrate overlaps with the orthographic projection of the light-emitting functional part on the base substrate. A portion of the light emitted by the light-emitting functional part can pass through the light-transmitting opening after passing through the second electrode.
  • the provision of the light-transmitting opening can improve the light transmittance of the auxiliary electrode, reduce the problem of electrode heating caused by the auxiliary electrode absorbing the light emitted by the light-emitting functional part, and thus reduce the impact of electrode heating on the life of the light-emitting component; the auxiliary electrode can also reflect the light emitted by the light-emitting functional part at other positions besides the light-transmitting opening, thereby ensuring the brightness of the light-emitting component. Therefore, the provision of the light-transmitting opening can balance the light transmittance and reflectivity of the auxiliary electrode, ensuring the life and luminous brightness of the light-emitting component. For example, by setting the size of the light-transmitting opening, the luminous brightness can be maximized while ensuring the designed life; or, the service life can be maximized while ensuring the designed luminous brightness.
  • the light-transmitting opening increases the light transmittance of the auxiliary electrode.
  • the side of the light-emitting component away from the substrate can be seen through the auxiliary electrode.
  • the shape design realizes a transparent effect, thereby expanding the application effect of the light-emitting component.
  • an auxiliary electrode is formed on a side of the second electrode away from the light-emitting functional layer, including: forming an electrode patterned structure on the second electrode; forming an auxiliary electrode including a light-transmitting opening on the second electrode, the electrode patterned structure is configured so that the material of the auxiliary electrode does not adhere to the electrode patterned structure, and the light transmittance of the electrode patterned structure is not less than 50%, and the light-transmitting opening exposes at least a portion of the electrode patterned structure.
  • the auxiliary electrode since the material of the auxiliary electrode is not attached to the electrode patterning structure, and the material of the electrode patterning structure does not stick to the material of the auxiliary electrode, it is difficult for the auxiliary electrode to adhere to the location where the electrode patterning structure is located, thereby enabling the patterning of the auxiliary electrode.
  • the electrode patterning structure can be used to easily and conveniently form a light-transmitting opening at the location where the electrode patterning structure is located. The process is simple and avoids the adverse effects of forming a light-transmitting opening on the auxiliary electrode using other methods.
  • the electrode patterning structure can make the layer where the auxiliary electrode is located smooth, making the subsequent packaging process more stable and reliable.
  • the orthographic projection of the electrode patterned structure on the base substrate overlaps with the orthographic projection of the light-emitting functional portion on the base substrate.
  • the orthographic projection of the electrode patterned structure on the base substrate overlaps with the orthographic projection of the first electrode on the base substrate.
  • the second electrode layer can be evaporated first, then the electrode patterned structure can be evaporated on the second electrode layer, and finally a layer of auxiliary electrode can be evaporated. Since the material of the auxiliary electrode is not attached to the electrode patterned structure, there is no auxiliary electrode at the position of the electrode patterned structure, and thus a light-transmitting opening is formed at the electrode patterned structure.
  • forming an auxiliary electrode on a side of the second electrode remote from the light-emitting functional layer includes: forming an auxiliary electrode material layer on a side of the second electrode remote from the light-emitting functional layer; and opening a hole in the auxiliary electrode material layer to form the auxiliary electrode including a light-transmitting opening.
  • the disclosed embodiments do not limit the process for forming the light-transmitting opening.
  • an etching process can be used.
  • a laser etching process can be used.
  • the light-emitting component further includes an encapsulation layer disposed on a side of the auxiliary electrode distal from the second electrode, the encapsulation layer including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked together, the organic encapsulation layer disposed on a side of the first inorganic encapsulation layer distal from the auxiliary electrode, and the second inorganic encapsulation layer disposed on a side of the organic encapsulation layer distal from the first inorganic encapsulation layer.
  • the fabrication method further includes forming at least one of the first inorganic encapsulation layer and the second inorganic encapsulation layer using an atomic layer deposition process.
  • the atomic layer deposition process has better filling performance and can evaporate a layer of thin film with higher thickness uniformity and very dense on a non-flat surface. Its thickness uniformity is significantly improved compared with traditional packaging processes. For example, the thickness uniformity can reach more than 90%.
  • the atomic layer deposition process has better encapsulation and coverage, which can not only better encapsulate particles brought in by the production line or during the evaporation of the second electrode, but also effectively prevent the immersion corrosion of water, oxygen, and sulfides in the external environment, thereby significantly improving the reliability of the package.
  • the first inorganic encapsulation layer can be formed by an atomic layer deposition process
  • the organic encapsulation layer can be formed by an inkjet printing (IJP) process
  • the second inorganic encapsulation layer can be formed by a chemical vapor deposition (CVD) process.
  • the material of the first inorganic encapsulation layer includes aluminum oxide (Al 2 O 3 ) or silicon oxide (SiO 2 ).
  • the material of the second inorganic encapsulation layer includes silicon nitride (SiNx).
  • the thickness of the first inorganic encapsulation layer is in the range of tens of nanometers.
  • the thickness of the first inorganic encapsulation layer is 50 nm.
  • the thickness of the second inorganic encapsulation layer is in the range of hundreds of nanometers.
  • the thickness of the second inorganic encapsulation layer is 600 nm.
  • the thickness of the organic encapsulation layer is in the range of several micrometers.
  • the thickness of the organic encapsulation layer is 8 ⁇ m.
  • the encapsulation layer further includes a third inorganic encapsulation layer disposed between the first inorganic encapsulation layer and the organic encapsulation layer.
  • the first inorganic encapsulation layer can be formed using an atomic layer deposition process
  • the third inorganic encapsulation layer can be formed using a chemical vapor deposition process
  • the organic encapsulation layer can be formed using an inkjet printing (IJP) process
  • the second inorganic encapsulation layer can be formed using a chemical vapor deposition process.
  • the second and third inorganic encapsulation layers can each have a thickness of 300 nm.

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Abstract

一种发光组件及其制作方法和车灯。该发光组件包括衬底基板和发光器件。发光器件包括第一电极、发光限定层、发光功能层、第二电极和辅助电极，发光限定层设置在第一电极远离衬底基板的一侧，且包括暴露第一电极的发光开口，发光功能层设置在发光限定层远离衬底基板的一侧，第二电极设置在发光功能层远离第一电极的一侧，辅助电极设置在第二电极远离发光功能层的一侧。发光功能层包括发光功能部，发光功能部设置在发光开口内并与暴露的第一电极接触。辅助电极包括透光开口，透光开口在衬底基板上的正投影与发光功能部在衬底基板上的正投影交叠。透光开口的设计可以平衡辅助电极的透光率和反射率，保证发光组件的寿命和发光亮度。

Description

发光组件及其制作方法和车灯 技术领域
本公开的实施例涉及一种发光组件及其制作方法和车灯。
背景技术
随着有机电致发光显示器(Organic Light Emitting Diode，OLED)技术的发展，其自主发光的技术原理和优秀的画质效果被广大消费者所追捧，已广泛应用于主流的中高端手机以及例如TPC、NB、车载以及航空娱乐屏等中大尺寸应用领域。
OLED技术具有像素电路自主可控，并具备像素级别的发光单元，可以应用到车尾灯，OLED技术不仅可以实现传统车尾灯的安全预警的作用，同时还赋予了车尾灯显示文案的功能，大大拓展了车尾灯的应用效果。传统的车尾灯一般由一个或几个较大的灯泡组成以实现安全预警作用，而采用像素矩阵化的车尾灯，由很多个发光单元组成，其不仅可以起到安全预警作用，还可以显示个性化的图案，发光单元越多，显示的图案种类以及精细化程度就越高。
发明内容
本公开实施例提供一种发光组件及其制作方法和车灯，通过在辅助阴极上设置透光开口，该发光组件一方面可以平衡辅助电极的透光率和反射率，保证发光组件的寿命和发光亮度；另一方面，还可以实现透明效果，扩展该发光组件的应用效果；再一方面，该发光组件还可以降低电阻，降低跨压，提高发光组件的寿命。
本公开至少一个实施例提供一种发光组件，包括衬底基板和设置在所述衬底基板上的发光器件，其中，所述发光器件包括：第一电极；发光限定层，设置在所述第一电极远离所述衬底基板的一侧，且包括暴露所述第一电极的发光开口；发光功能层，设置在所述发光限定层远离所述衬底基板的一侧；第二电极，设置在所述发光功能层远离所述第一电极的一侧；以及
辅助电极，设置在所述第二电极远离所述发光功能层的一侧，其中，所述发光功能层包括发光功能部，所述发光功能部设置在所述发光开口内并与暴 露的所述第一电极接触；所述辅助电极包括透光开口，所述透光开口在所述衬底基板上的正投影与所述发光功能部在所述衬底基板上的正投影交叠。
例如，在本公开一实施例提供的发光组件中，所述透光开口在所述衬底基板上的正投影的面积与所述发光功能部在所述衬底基板上的正投影的面积的比值不小于1/5。
例如，在本公开一实施例提供的发光组件还包括电极图案化结构，其中，所述电极图案化结构被配置为使所述辅助电极的材料不附着在所述电极图案化结构上，且所述电极图案化结构的透光率不小于50％，所述透光开口至少暴露所述电极图案化结构的一部分。
例如，在本公开一实施例提供的发光组件中，所述电极图案化结构的材料包括有机含氟材料。
例如，在本公开一实施例提供的发光组件中，所述电极图案化结构在垂直于所述衬底基板的方向上的尺寸与所述辅助电极在垂直于所述衬底基板的方向上的尺寸的比值的取值范围为0.7至1.3。
例如，在本公开一实施例提供的发光组件中，所述电极图案化结构在所述衬底基板上的正投影与所述发光功能部在所述衬底基板上的正投影交叠。
例如，在本公开一实施例提供的发光组件中，所述辅助电极的反射率大于所述第二电极的反射率。
例如，在本公开一实施例提供的发光组件中，所述第二电极的材料包括铝，所述第二电极的厚度的取值范围为50-300埃，所述辅助电极的材料包括镁银合金或镁铝合金，所述辅助电极的厚度的取值范围为500-2000埃。
例如，在本公开一实施例提供的发光组件还包括：缓冲层，设置在所述衬底基板上；金属走线层，设置在所述缓冲层远离所述衬底基板的一侧；钝化层，设置在所述金属走线层远离所述衬底基板的一侧，且包括暴露所述金属走线层的连接开口；以及金属连接线，设置在所述连接开口内并与暴露的所述金属走线层相连，其中，所述金属连接线与所述第一电极相连。
例如，在本公开一实施例提供的发光组件中，所述金属走线层包括多条金属走线，透光开口在所述衬底基板上的正投影与所述多条金属走线在所述衬底基板上的正投影不交叠。
例如，在本公开一实施例提供的发光组件还包括设置在所述辅助电极远离所述第二电极一侧的封装层，其中，所述封装层包括层叠设置的第一无机封 装层、有机封装层和第二无机封装层，所述有机封装层设置在所述第一无机封装层远离所述辅助电极的一侧，所述第二无机封装层设置在所述有机封装层远离所述第一无机封装层的一侧，所述第一无机封装层和所述第二无机封装层中的至少一层的厚度均一性不小于60％。
例如，在本公开一实施例提供的发光组件中，所述有机封装层的折射率大于所述第一无机封装层的折射率，所述第二无机封装层的折射率大于所述有机封装层的折射率。
例如，在本公开一实施例提供的发光组件中，所述第一无机封装层的折射率大于1.4，所述有机封装层的折射率大于1.6，所述第二无机封装层的折射率大于1.7。
例如，在本公开一实施例提供的发光组件中，入射至所述第一无机封装层、所述有机封装层、所述第二无机封装层的光的入射角为θ，所述第一无机封装层、所述有机封装层、所述第二无机封装层的厚度分别为d1，d2和d3，d1，d2和d3满足下面公式：d1sinθ＝d2sinθ＝d3sinθ，且均不等于±(2k+1)λ/2,其中，λ为所述发光功能部发出的光的波长，θ的取值范围为0度至90度之间，k为大于或者等于0的整数。
例如，在本公开一实施例提供的发光组件中，d1，d2和d3满足下面公式：d1sinθ＝d2sinθ＝d3sinθ＝±kλ。
例如，在本公开一实施例提供的发光组件中，还包括：光学胶，设置在所述封装层远离所述第二电极的一侧；以及盖板，设置在所述光学胶远离所述封装层的一侧，其中，所述光学胶的折射率大于或等于所述第二无机封装层的折射率。
本公开至少一个实施例提供一种车灯，包括前文任一所述的发光组件。
本公开至少一个实施例提供一种发光组件的制作方法，包括：在所述衬底基板上形成第一电极；在所述第一电极远离所述衬底基板的一侧形成发光限定层，所述发光限定层包括暴露所述第一电极的发光开口；在所述发光限定层远离所述衬底基板的一侧形成发光功能层；在所述发光功能层远离所述发光限定层的一侧形成第二电极；在所述第二电极远离所述发光功能层的一侧形成辅助电极，所述第一电极、所述发光限定层、所述发光功能层、所述第二电极和所述辅助电极形成位于所述衬底基板上的发光器件，所述发光功能层包括发光功能部，所述发光功能部设置在所述发光开口并与暴露的所述的第一 电极接触，所述辅助电极包括透光开口，所述透光开口在所述衬底基板上的正投影与所述发光功能部在所述衬底基板上的正投影交叠。
例如，在本公开一实施例提供的制作方法中，所述在所述第二电极远离所述发光功能层的一侧形成辅助电极，包括：在所述第二电极上形成电极图案化结构；以及在所述第二电极上形成包括所述透光开口的所述辅助电极，其中，所述电极图案化结构被配置为使所述辅助电极的材料不附着在所述电极图案化结构上，且所述电极图案化结构的透光率不小于50％，所述透光开口暴露所述电极图案化结构。
例如，在本公开一实施例提供的制作方法中，所述发光组件还包括设置在所述辅助电极远离所述第二电极一侧的封装层，所述封装层包括层叠设置的第一无机封装层、有机封装层和第二无机封装层，所述有机封装层设置在所述第一无机封装层远离所述辅助电极的一侧，所述第二无机封装层设置在所述有机封装层远离所述第一无机封装层的一侧，所述制作方法还包括：采用原子层沉积工艺形成所述第一无机封装层和所述第二无机封装层中的至少一层。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为一种OLED车尾灯的结构示意图；
图2为另一种OLED车尾灯的结构示意图；
图3A为再一种OLED车尾灯的结构示意图；
图3B为再一种OLED车尾灯的结构示意图；
图4为本公开一实施例提供的一种发光组件的结构示意图；
图5为本公开一实施例提供的一种采用电极图案化结构实现电极图案化的示意图；
图6为图4所示的发光组件的沿另一方向剖切的部分结构示意图；
图7为本公开一实施例提供的一种封装层的结构示意图；
图8为本公开一实施例提供的另一种封装层的结构示意图；
图9为本公开一实施例提供的封装层的信赖性测试结果图；
图10A为图4所示的光学组件的光路示意图；
图10B为本公开一实施例提供的光强叠加和光强抵消的示意图；
图11为本公开一实施例提供的另一种发光组件的结构示意图；
图12为本公开一实施例提供的一种车灯的示意图；
图13为本公开一实施例提供的另一种车灯的结构示意图；以及
图14为本公开一实施例提供的一种发光组件的制作方法。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。
除非另外定义，本公开实施例中使用的“平行”、“垂直”和“相同”等特征均包括严格意义上的“平行”、“垂直”、“相同”等情况，以及“大致平行”、“大致垂直”、“大致相同”等包含一定误差的情况。例如，上述的“大致”可表示所比较的对象的差值为所比较的对象的平均值的10％，或者5％之内。在本公开实施例的下文中没有特别指出一个部件或元件的数量时，意味着该部件或元件可以是一个也可以是多个，或可理解为至少一个。“至少一个”指一个或多个，“多个”指至少两个。本公开实施例中的“同层设置”指同一材料在经过同一步骤(例如，一步图案化工艺)后形成的多个膜层之间的关系。这里的“同层”并不总是指多个膜层的厚度相同或者多个膜层在截面图中的高度相同。
目前，矩阵化的车尾灯一般为发光二极管(LED)产品，OLED产品的车尾灯若被广泛应用，还需要解决下面问题：1、发光亮度和寿命的问题；2、柔性OLED的封装可靠性问题；3、OLED器件发热问题。
图1为一种OLED车尾灯的结构示意图。如图1所示，该OLED车尾灯包括刚性基底11以及依次层叠设置在刚性基底11上的阳极12、发光功能层13、阴极14和封装层15。图1所示的车尾灯的刚性基底11为玻璃基板，封装层15采用熔融玻璃粉密封(Frit Seal)。玻璃基板无法实现三维形态，难以满足车载客户个性化需求。熔融玻璃粉密封技术的封装效果差，在阴极14的材料为镁银合金时，汽车尾气产生的硫化物会和镁银合金产生反应，导致镁银合金腐蚀易出现暗点等不良现象。
图2为另一种OLED车尾灯的结构示意图。如图2所示，该OLED车尾灯与图1所示的OLED车尾灯的区别在于，图2所示的OLED车尾灯的封装层15为采用化学气相沉积(CVD)形成的TFE薄膜封装(Thin-Film Encapsulation)层。采用化学气相沉积(CVD)形成的TFE薄膜封装(Thin-Film Encapsulation)层的封装效果差，在阴极14的材料为镁银合金时，汽车尾气产生的硫化物会和镁银合金产生反应，导致镁银合金腐蚀易出现暗点等不良现象。
图3A为再一种OLED车尾灯的结构示意图。如图3A所示，该OLED车尾灯包括柔性基底16、缓冲层17、阳极12、发光功能层13、阴极14和封装层15。图3A所示的OLED车尾灯的阴极14的材料为薄铝，该OLED车尾灯为底发射器件，光从柔性基底16侧出射。由于薄铝的反射率相对较低，使得一部分光源从阴极透过，从而降低了OLED车尾灯的整体亮度和寿命。
图3B为再一种OLED车尾灯的结构示意图。如图3B所示，该OLED车尾灯与图3A所示的OLED车尾灯的区别在于，对图3B所示的OLED车尾灯的阴极进行了加厚。通过增加铝层的厚度，虽然可以有效改善其反射率，但会大大影响蒸镀时间，产能损失严重，而且阴极材料的透光率低时，也会带来阴极发热严重，从而降低了OLED车尾灯的寿命。
另外，根据车尾灯的设计需求，在车尾灯不工作时，希望可以看见车尾灯背面的造型设计以拓展车尾灯的应用效果。
本公开实施例提供一种发光组件及其制作方法和车灯。该发光组件包括衬底基板和设置在衬底基板上的发光器件。发光器件包括第一电极、发光限定层、发光功能层、第二电极和辅助电极，发光限定层设置在第一电极远离衬底基板的一侧，且包括暴露第一电极的发光开口，发光功能层设置在发光限定层远离衬底基板的一侧，第二电极设置在发光功能层远离第一电极的一侧，辅助 电极设置在第二电极远离发光功能层的一侧。发光功能层包括发光功能部，发光功能部设置在发光开口内并与暴露的第一电极接触。辅助电极包括透光开口，透光开口在衬底基板上的正投影与发光功能部在衬底基板上的正投影交叠。
在本公开实施例提供的发光组件中，第二电极远离发光功能层的一侧设置有辅助电极，一方面，辅助电极的设置可以降低电阻，降低跨压，最终实现降低温升，提高发光组件的寿命的技术效果；另一方面，辅助电极的设置还可以避免形成过厚的第二电极，由此，可以减小形成第二电极的时间，降低形成第二电极的产能损失；再一方面，可以在辅助电极上设置透光开口，从而，可以提高该发光组件的寿命和发光亮度，扩展该发光组件的应用效果。
在本公开实施例提供的发光组件中，辅助电极上设置有透光开口，透光开口在衬底基板上的正投影与发光功能部在衬底基板上的正投影交叠，发光功能部发出的光的一部分在透过第二电极之后，可通过该透光开口。该透光开口的设置可以提高辅助电极的透光率，减小辅助电极吸收发光功能部发出的光带来的电极发热问题，从而可以降低电极发热对发光组件的寿命的影响；辅助电极在除了透光开口的其他位置还可以对发光功能部发出的光进行反射，保证了发光组件的亮度问题。从而，该透光开口的设置可以平衡辅助电极的透光率和反射率，保证了发光组件的寿命和发光亮度。透光开口增加了辅助电极的透光率，在发光组件不发光时，还可以透过辅助电极看到发光组件远离衬底基板一侧的造型设计，实现透明效果，从而可以扩展该发光组件的应用效果。
下面，结合附图对本公开实施例提供的发光组件及其制作方法和车灯进行详细的说明。
本公开实施例提供一种发光组件。图4为本公开一实施例提供的一种发光组件的结构示意图。如图4所示，该发光组件100包括衬底基板110和设置在衬底基板110上的发光器件120。发光器件120包括第一电极121、发光限定层122、发光功能层123、第二电极124和辅助电极125，发光限定层122设置在第一电极121远离衬底基板110的一侧，且包括暴露第一电极121的发光开口1220，发光功能层123设置在发光限定层122远离衬底基板110的一侧，第二电极124设置在发光功能层123远离第一电极121的一侧，辅助电极125设置在第二电极124远离发光功能层123的一侧。发光功能层123包括发光功能部1230，发光功能部1230设置在发光开口1220内并与暴露的 第一电极121接触。辅助电极125包括透光开口1250，透光开口1250在衬底基板110上的正投影与发光功能部1230在衬底基板110上的正投影交叠。
在本公开实施例提供的发光组件100中，如图4所示，第二电极124远离发光功能层123的一侧设置有辅助电极125，一方面，辅助电极125的设置可以降低电阻，降低跨压，最终实现降低温升，提高发光组件100的寿命的技术效果；另一方面，辅助电极125的设置还可以避免形成过厚的第二电极124，由此，可以减小形成第二电极124的时间，降低形成第二电极124的产能损失；再一方面，可以在辅助电极125上设置透光开口1250，从而，可以提高该发光组件100的寿命和发光亮度，扩展该发光组件100的应用效果。
如图4所示，辅助电极125上设置有透光开口1250，透光开口1250在衬底基板110上的正投影与发光功能部1230在衬底基板110上的正投影交叠，发光功能部1230发出的光的一部分在透过第二电极124之后，可通过该透光开口1250。该透光开口1250的设置可以提高辅助电极125的透光率，减小辅助电极125吸收发光功能部1230发出的光带来的电极发热问题，从而可以降低电极发热对发光组件100的寿命的影响；辅助电极125在除了透光开口1250的其他位置还可以对发光功能部1230发出的光进行反射，保证了发光组件100的亮度问题。从而，该透光开口1250的设置可以平衡辅助电极125的透光率和反射率，保证了发光组件100的寿命和发光亮度。例如，通过设置透光开口1250的尺寸，在保证设计寿命的前提下，可以尽量提高发光亮度；或者，在保证设计的发光亮度的前提下，尽量提高使用寿命。例如，发光功能部1230在第一电极121、第二电极124和辅助电极124的作用下电致发光，光线从衬底基板110侧出射，也称为底发射。
在本公开实施例提供的发光组件100中，透光开口1250增加了辅助电极125的透光率，在发光组件100不发光时，可以透过辅助电极125看到发光组件100远离衬底基板110一侧的造型设计，实现透明效果，从而可以扩展该发光组件100的应用效果。
在一些示例中，如图4所示，透光开口1250在衬底基板110上的正投影的面积与发光功能部1230在衬底基板110上的正投影的面积的比值不小于1/5。例如，可以根据发光组件100的发光亮度、寿命或者造型等需求对透光开口1250的尺寸进行设计，本公开实施例对此不作限定。例如，该比值可以不小于1/4。例如，该比值可以不小于1/3。例如，该比值可以不小于1/2。例 如，该比值可以等于1。例如，该比值可以大于1。例如，在该比值小于1时，透光开口1250在衬底基板110上的正投影可以落入发光功能部1230在衬底基板110上的正投影内。例如，在该比值大于1时，发光功能部1230在衬底基板110上的正投影可以落入透光开口1250在衬底基板110上的正投影内。
在一些示例中，如图4所示，透光开口1250在衬底基板110上的正投影与第一电极121在衬底基板110上的正投影交叠。例如，透光开口1250在衬底基板110上的正投影的面积与第一电极121在衬底基板110上的正投影的面积的比值不小于1/5。例如，该比值可以不小于1/4。例如，该比值可以不小于1/3。例如，该比值可以不小于1/2。例如，该比值可以等于1。例如，该比值可以大于1。本公开实施例对该比值的数值不作限定。例如，在该比值小于1时，透光开口1250在衬底基板110上的正投影可以落入第一电极121在衬底基板110上的正投影内。例如，在该比值大于1时，第一电极121在衬底基板110上的正投影可以落入透光开口1250在衬底基板110上的正投影内。
在一些示例中，如图4所示，透光开口1250在衬底基板110上的正投影与发光开口1220在衬底基板110上的正投影交叠。例如，透光开口1250在衬底基板110上的正投影的面积与发光开口1220在衬底基板110上的正投影的面积的比值不小于1/5。例如，该比值可以不小于1/4。例如，该比值可以不小于1/3。例如，该比值可以不小于1/2。例如，该比值可以等于1。例如，该比值可以大于1。本公开实施例对该比值的数值不作限定。例如，在该比值小于1时，透光开口1250在衬底基板110上的正投影可以落入发光开口1220在衬底基板110上的正投影内。例如，在该比值大于1时，发光开口1220在衬底基板110上的正投影可以落入透光开口1250在衬底基板110上的正投影内。
例如，透光开口在衬底基板上的正投影的中心与发光功能部在衬底基板上的正投影的中心大致重合。例如，透光开口在衬底基板上的正投影的中心与第一电极在衬底基板上的正投影的中心大致重合。例如，透光开口在衬底基板上的正投影的中心与发光开口在衬底基板上的正投影的中心大致重合。
例如，透光开口在衬底基板上的正投影的外轮廓的形状与发光功能部在衬底基板上的正投影的外轮廓的形状大致相同。例如，透光开口在衬底基板上的正投影的外轮廓的形状与第一电极在衬底基板上的正投影的外轮廓的形状大致相同。例如，透光开口在衬底基板上的正投影的外轮廓的形状与发光开口 在衬底基板上的外轮廓的形状大致相同。
例如，透光开口在衬底基板上的正投影的形状包括方形、圆形、椭圆形、多边形或者环形等。本公开实施例对透光开口的形状和尺寸等不作限定。
在一些示例中，如图4所示，发光组件100还包括电极图案化结构130，电极图案化结构130被配置为使辅助电极125的材料不附着在电极图案化结构130上，且电极图案化结构130的透光率不小于50％，透光开口1250至少暴露电极图案化结构130的一部分。
在该示例中，由于辅助电极125的材料不附着在电极图案化结构130上，电极图案化结构130的材料不粘辅助电极125的材料，在形成辅助阴极125的过程中，在有电极图案化结构130的位置，辅助电极125的材料很难附着，从而可以实现辅助电极125的图案化。通过电极图案化结构130可以简单方便的在电极图案化结构130所在的位置处形成透光开口1250，工艺简单，避免了采用其他方法在辅助电极125上形成透光开口1250对辅助电极125带来不良影响。另外，电极图案化结构130可以使得辅助电极125所在的膜层更加平整，使得后续的封装工艺更加稳定和可靠。
需要说明的是，辅助电极125的材料不附着在电极图案化结构130上包括辅助电极125的材料很难或者不易附着在电极图案化结构130上的情况，此时，电极图案化结构130上可能会存在很少的辅助电极125的材料；也包括辅助电极125的材料无法附着在电极图案化结构130上的情况，此时，电极图案化结构130上没有辅助电极125的材料。
例如，可以在第二电极上先形成电极图案化结构，再形成辅助电极，由于辅助电极的材料不附着在电极图案化结构上，从而在形成辅助电极的同时，在形成电极图案化结构的位置形成透光开口。例如，电极图案化结构的制备工艺包括蒸镀。
例如，如图4所示，透光开口1250可以暴露电极图案化结构130的一部分。例如，透光开口1250可以完全暴露电极图案化结构130。例如，至少电极图案化结构130的一部分可以位于透光开口1250内。例如，电极图案化结构130完全位于透光开口1250内。例如，电极图案化结构在衬底基板上的正投影可以与透光开口在衬底基板上正投影交叠。例如，电极图案化结构在衬底基板上的正投影可以落入透光开口在衬底基板上正投影内。
例如，如图4所示，电极图案化结构130在衬底基板110上的正投影与 发光功能部1230在衬底基板110上的正投影交叠。例如，电极图案化结构130在衬底基板110上的正投影的面积与发光功能部1230在衬底基板110上的正投影的面积的比值不小于1/5。例如，该比值可以不小于1/4。例如，该比值可以不小于1/3。例如，该比值可以不小于1/2。例如，该比值可以等于1。例如，该比值可以大于1。本公开实施例对该比值的数值不作限定。例如，在该比值小于1时，电极图案化结构130在衬底基板110上的正投影可以落入发光功能部1230在衬底基板110上的正投影内。例如，在该比值大于1时，发光功能部1230在衬底基板110上的正投影可以落入电极图案化结构130在衬底基板110上的正投影内。
例如，如图4所示，电极图案化结构130在衬底基板110上的正投影与第一电极121在衬底基板110上的正投影交叠。例如，电极图案化结构130在衬底基板110上的正投影的面积与第一电极121在衬底基板110上的正投影的面积的比值不小于1/5。例如，该比值可以不小于1/4。例如，该比值可以不小于1/3。例如，该比值可以不小于1/2。例如，该比值可以等于1。例如，该比值可以大于1。本公开实施例对该比值的数值不作限定。例如，在该比值小于1时，电极图案化结构130在衬底基板110上的正投影可以落入第一电极121在衬底基板110上的正投影内。例如，在该比值大于1时，第一电极121在衬底基板110上的正投影可以落入电极图案化结构130在衬底基板110上的正投影内。
例如，如图4所示，电极图案化结构130在衬底基板110上的正投影与发光开口1220在衬底基板110上的正投影交叠。例如，电极图案化结构130在衬底基板110上的正投影的面积与发光开口1220在衬底基板110上的正投影的面积的比值不小于1/5。例如，该比值可以不小于1/4。例如，该比值可以不小于1/3。例如，该比值可以不小于1/2。例如，该比值可以等于1。例如，该比值可以大于1。本公开实施例对该比值的数值不作限定。例如，在该比值小于1时，电极图案化结构130在衬底基板110上的正投影可以落入发光开口1220在衬底基板110上的正投影内。例如，在该比值大于1时，发光开口1220在衬底基板110上的正投影可以落入电极图案化结构130在衬底基板110上的正投影内。
例如，电极图案化结构在衬底基板上的正投影的中心与发光功能部在衬底基板上的正投影的中心大致重合。例如，电极图案化结构在衬底基板上的正 投影的中心与第一电极在衬底基板上的正投影的中心大致重合。例如，电极图案化结构在衬底基板上的正投影的中心与发光开口在衬底基板上的正投影的中心大致重合。
例如，电极图案化结构在衬底基板上的正投影的外轮廓的形状与发光功能部在衬底基板上的正投影的外轮廓的形状大致相同。例如，电极图案化结构在衬底基板上的正投影的外轮廓的形状与第一电极在衬底基板上的正投影的外轮廓的形状大致相同。例如，电极图案化结构在衬底基板上的正投影的外轮廓的形状与发光开口在衬底基板上的正投影的外轮廓的形状大致相同。
例如，电极图案化结构在衬底基板上的正投影的形状包括方形、圆形、椭圆形、多边形或者环形等。本公开实施例对透光开口的形状和尺寸等不作限定。
例如，辅助电极的材料为镁、银或者镁银合金时，电极图案化结构的材料不粘镁、银或者镁银合金，镁、银或者镁银合金很难或者无法附着在，电极图案化结构上。
例如，电极图案化结构的材料可以称为电极图案化材料，电极图案化结构的材料包括有机含氟材料。当然，本公开实施例对电极图案化结构的材料不作限制。
例如，电极图案化结构的透光率不小于50％。例如，电极图案化结构的透光率不小于60％。例如，电极图案化结构的透光率不小于70％。例如，电极图案化结构的透光率不小于80％。例如，电极图案化结构的透光率不小于85％。例如，电极图案化结构的透光率不小于90％。例如，电极图案化结构的透光率不小于95％。
例如，如图4所示，电极图案化结构130在垂直于衬底基板110的方向上的尺寸与辅助电极125在垂直于衬底基板110的方向上的尺寸的比值的取值范围为0.7至1.3。例如，电极图案化结构130的厚度与辅助电极125的厚度的比值的取值范围为0.7至1.3。
例如，如图4所示，电极图案化结构130在垂直于衬底基板110的方向上的尺寸可以等于辅助电极125在垂直于衬底基板110的方向上的尺寸。当然，本公开实施例对此不作限定。例如，电极图案化结构在垂直于衬底基板的方向上的尺寸可以小于辅助电极在垂直于衬底基板的方向上的尺寸。例如，电极图案化结构在垂直于衬底基板的方向上的尺寸可以大于辅助电极在垂直于 衬底基板的方向上的尺寸。
例如，电极图案化结构在垂直于衬底基板的方向上的尺寸不小于100埃。例如，电极图案化结构在垂直于衬底基板的方向上的尺寸不小于150埃。本公开实施例对电极图案化结构的尺寸不作限定。例如，可以根据辅助电极的材料和厚度等进行设计。
图5为本公开一实施例提供的一种采用电极图案化结构实现电极图案化的示意图。如图5所示，六边形开口为透光开口1250，透光开口1250内为电极图案化结构130，透光开口1250外为电极。例如，该电极的材料为镁银合金。从而，通过电极图案化结构130可以方便简单的实现电极的图案化。
在一些示例中，辅助电极的反射率大于第二电极的反射率。辅助电极具有更大的反射率，可以提高辅助电极对光线的反射；辅助电极上设置有透光开口，透光开口可以透射部分光线。由此，通过使得辅助电极具有更大的反射率，可以更好平衡辅助电极的透光率和反射率。
例如，在透光开口的尺寸相同的情况下，增大辅助电极的反射率，可以提高发光组件的发光亮度。例如，在发光亮度相同的前提下，增大辅助电极的反射率，可以对应增大透光开口，从而，可以提高发光组件的寿命，并且可以更好的扩展发光组件的应用效果。
例如，辅助电极选择反射率更大的材料，可以相应减小辅助电极的厚度，从而，可以减小形成辅助电极的时间，降低形成辅助电极的产能损失。
在一些示例中，第二电极的化学稳定性优于辅助电极的化学稳定性，通过在发光功能层上设置化学稳定性更好的第二电极，以作为阴极的主要部分，可以有效避免蒸镀工艺或者外界硫化物造成的腐蚀而导致暗点的产生。例如，在该光学组件用于汽车尾灯时，可以有效的解决尾气中产生的硫化物导致的腐蚀而最终产生的暗点问题。
例如，第二电极的材料包括铝。当然，本公开实施例对第二电极的材料不作限定。例如，第二电极的材料也可以是银、镁、镁银合金、镁铝合金、锂、锂掺杂合金、铟锡氧化物(ITO)、锌氧化锡(ZnSnO)、氟掺杂氧化锡(FTO)等。
例如，第二电极的厚度的取值范围为50-300埃。
例如，辅助电极的材料包括镁银合金或镁铝合金。当然，本公开实施例对辅助电极的材料不作限定。例如，辅助电极的材料也可以是银、镁、镁银合金、 镁铝合金、锂、锂掺杂合金等。
例如，辅助电极的厚度的取值范围为500-2000埃。
例如，第一电极的材料包括氧化铟锡(ITO)。
例如，第一电极可以是阳极。例如，第二电极可以是阴极。例如，辅助电极可以是辅助阴极。
例如，发光功能部被配置为发红光。当然，本公开实施例对此不作限定，也可以发其他颜色的光。
在一些示例中，如图4所示，该发光组件100还包括缓冲层140、金属走线层145、钝化层150和金属连接线155。缓冲层140设置在衬底基板110上，金属走线层145设置在缓冲层140远离衬底基板110的一侧，钝化层150设置在金属走线层145远离衬底基板110的一侧，且包括暴露金属走线层145的连接开口1500，金属连接线155设置在连接开口1500内并与暴露的金属走线层145相连，金属连接线155与第一电极121相连。金属走线层145通过金属连接线155与第一电极121相连，从而，可以通过金属走线层145和金属连接线线155实现对发光组件100的发光控制。
图6为图4所示的发光组件的沿另一方向剖切的部分结构示意图。如图6所示，该发光组件100的金属连接线155与第一电极121相连。
例如，如图6所示，金属连接线155与第一电极121由同一材料经过同一步图案化工艺形成，由此实现金属连接线155与第一电极121的相连。当然，本公开实施例对此不作限制。
在一些示例中，如图4所示，金属走线层145包括多条金属走线1450，第一电极121与金属走线1450间隔设置。
在一些示例中，如图4所示，透光开口1250在衬底基板110上的正投影与多条金属走线1450在衬底基板110上的正投影不交叠。
例如，衬底基板可以是刚性衬底基板，例如，玻璃衬底基板等。例如，衬底基板也可以为柔性衬底基板，例如，聚酰亚胺基板等，本申请对此不作限定。
在一些示例中，如图4所示，该发光组件100还包括设置在辅助电极125远离第二电极124一侧的封装层160，封装层160包括层叠设置的第一无机封装层161、有机封装层162和第二无机封装层163，有机封装层162设置在第一无机封装层161远离辅助电极125的一侧，第二无机封装层163设置在有机封装层162远离第一无机封装层161的一侧，第一无机封装层161和第二 无机封装层163中的至少一层的厚度均一性不小于60％。
图7为本公开一实施例提供的一种封装层的结构示意图。如图7所示，该封装层160在顶边处的顶边厚度为Dt，在侧边处的侧边厚度为Ds，在底边处的底边厚度为Db。封装层160的厚度均一性包括侧边厚度均一性和底边厚度均一性。侧边厚度均一性为侧边厚度Ds与顶边厚度Dt的比值，底边厚度均一性为底边厚度Db与顶边厚度Dt的比值。在侧边厚度均一性和底边厚度均一性均不小于60％时，该封装层160的厚度均一性满足不小于60％。
在该实施例中，通过使得第一无机封装层161和第二无机封装层163中的至少一层的厚度均一性不小于60％，可以使得封装层160具有更好的填充性和爬坡性，使得封装层160具有更好的包裹性和覆盖性，例如，可以更好的包裹产线中或者蒸镀第二电极124时带来的颗粒物，可以有效阻碍外部环境中的水氧、硫化物的浸入腐蚀，从而，可以显著提高封装的信赖性。例如，在该光学组件用于汽车尾灯时，更好的封装效果可以更好的阻碍汽车尾气的浸入，提高光学组件以及汽车尾灯的使用寿命。
例如，第一无机封装层和第二无机封装层中的至少一层包括第一无机封装层、第二无机封装层、第一无机封装层和第二无机封装层三种情况，在此不再一一赘述。
例如，第一无机封装层和第二无机封装层中的至少一层的厚度均一性不小于70％。例如，第一无机封装层和第二无机封装层中的至少一层的厚度均一性不小于80％。例如，第一无机封装层和第二无机封装层中的至少一层的厚度均一性不小于90％。例如，第一无机封装层和第二无机封装层中的至少一层的厚度均一性不小于95％。
例如，可以采用原子层沉积(Atomic Layer Deposition，ALD)工艺形成第一无机封装层和第二无机封装层中的至少一层。原子层沉积工艺具有更好的填充性能，可以在非平坦的表面蒸镀一层厚度均一性更高且非常致密的薄膜层，其厚度均一性相比传统的封装工艺有显著的提高，例如，厚度均一性可以达到90％以上，例如，厚度均一性可以达到95％以上。
图8为本公开一实施例提供的另一种封装层的结构示意图。如图8所示，在膜层01的非平坦的表面上形成有一层厚度均一且非常致密的封装层02。该封装层02不仅具有更好的厚度均一性，而且还可以更好对非平坦表面进行填充。例如，该封装层02可以为前文所述的第一无机封装层和/或第二无机封装 层。例如，该膜层01可以是前文所述的辅助电极或者有机封装层。需要说明的是，为了更清楚的展示封装层的填充效果，图中的膜层01和封装层02均采用微观颗粒显示。
例如，如图8所示，该膜层01的表面包括微沟道011，封装层02部分位于微沟道011内。从而，该膜层01可以更好的对非平坦表面上的微沟道011进行填充。例如，封装层还包括设置在第一无机封装层和有机封装层之间的第三无机封装层。本公开实施例对此不作限定。
图9为本公开一实施例提供的封装层的信赖性测试结果图。如图9所示，方案一的封装层包括依次层叠设置的无机封装层、有机封装层和无机封装层，两层无机封装层均为采用化学气相沉积形成的薄膜封装层，有机封装层采用喷墨打印工艺形成，厚度为8μm；方案二的封装层包括依次层叠设置的第一无机封装层、有机封装层和第二无机封装层，第一无机封装层为采用原子层沉积工艺形成的薄膜封装层，第二无机封装层为采用化学气相沉积形成的薄膜封装层，第一无机封装层的材料为氧化铝(Al2O3)，厚度为50nm，第二无机封装层的材料为氮化硅(SiNx)，厚度为600nm，有机封装层采用喷墨打印工艺形成，厚度为8μm；方案三的封装层包括依次层叠设置的第一无机封装层、有机封装层和第二无机封装层，第一无机封装层为采用原子层沉积工艺形成的薄膜封装层，第二无机封装层为采用化学气相沉积形成的薄膜封装层，第一无机封装层的材料为氧化硅(SiO2)，厚度为50nm，第二无机封装层的材料为氮化硅(SiNx)，厚度为600nm，有机封装层采用喷墨打印工艺形成，厚度为8μm；方案四的封装层包括依次层叠设置的第一无机封装层、第三无机封装层、有机封装层和第二无机封装层，第一无机封装层为采用原子层沉积工艺形成的薄膜封装层，第二无机封装层和第三无机封装层均为采用化学气相沉积形成的薄膜封装层，第一无机封装层的材料为氧化硅(SiO2)，厚度为50nm，第二无机封装层和第三无机封装层的材料均为氮化硅(SiNx)，厚度均为300nm，有机封装层采用喷墨打印工艺形成，厚度为8μm。
在该示例中，方案一的第一无机封装层为采用化学气相沉积形成的薄膜封装层，方案二、方案三和方案四的第一无机封装层均为采用原子层沉积工艺形成的薄膜封装层。如图9所示，在85摄氏度高温和85％高湿的测试条件下，相同的测试时间下，方案二、方案三和方案四的失效时间均高于方案一。例如，相同条件下，方案三的失效时间是方案一的两倍，更好的提高了封装层 的信赖性。例如，方案四相对方案三增加了第三无机封装层，方案四的失效时间相比方案三有了更进一步的提升。例如，方案一的第一无机封装层的材料选用氧化铝(Al2O3)，在测试时间达到1000小时后，仍未出现失效。由此，本公开实施例的封装层具有更好的信赖性。
在一些示例中，有机封装层的折射率大于第一无机封装层的折射率，第二无机封装层的折射率大于有机封装层的折射率。利用光的全反射的条件，即光从低折射率的介质到高折射率的介质的传播途径中，会产生全反射的现象。从而，不仅可以提高光的传播反射率，提高发光组件的发光亮度和发光效率，而且还可以降低第二电极和辅助电极的温升，提高发光组件的寿命。
例如，第一无机封装层的折射率大于1.4，有机封装层的折射率大于1.6，第二无机封装层的折射率大于1.7。本公开实施例对第一无机封装层、有机封装层和第二无机封装层的折射率不作限定，可以根据材料进行选定。
图10A为图4所示的光学组件的光路示意图。如图4和图10A所示，第一无机封装层161的厚度为d1，入射至第一无机封装层161的光的入射角为θ，在满足d1sinθ＝±kλ时，光的干涉使得光强相互叠加，此时，反射光最强。λ为光的波长，θ的取值范围为0度至90度之间，k为大于或者等于0的整数。从而，可以根据光的波长或者k的数值设置第一无机封装层161的厚度，使反射光最强以提高光的传播反射率，提高发光组件100的发光亮度和发光效率。当然，本公开实施例对此不作限定。在d1sinθ＝±(2k+1)λ/2时，光的干涉使得光强相互抵消，反射光最弱。例如，也可以使得d1sinθ不等于±(2k+1)λ/2，以设置第一无机封装层161的厚度。例如，λ可以为红光的波长。
图10B为本公开一实施例提供的光强叠加和光强抵消的示意图。如图10B所示，当两条或多条光线相遇时，会产生干涉现象。例如，如图10B中的(a)所示，光线a1和光线a2的相位差为波长的整数倍时，光的干涉使得光强叠加，此时，干涉后的光线a3的光强最强。例如，如图10B中的(b)所示，光线b1和光线b2的相位差为波长的(2k+1)/2倍时，光的干涉使得光强抵消，此时，干涉后的光线b3的光强最弱。
在一些示例中，如图4和图10A所示，有机封装层162的厚度为d2，入射至有机封装层162的入射角为θ，在满足d2sinθ＝±kλ时，光的干涉使得光强相互叠加，此时，反射光最强。从而，可以根据光的波长或者k的数值设置有机封装层162的厚度，使反射光最强以提高光的传播反射率，提高发光组 件100的发光亮度和发光效率。当然，本公开实施例对此不作限定。例如，也可以使得d2sinθ不等于±(2k+1)λ/2，以设置有机封装层162的厚度。
在一些示例中，如图4和图10A所示，第二无机封装层163的厚度为d3，入射至第二无机封装层163的入射角为θ，在满足d3sinθ＝±kλ时，光的干涉使得光强相互叠加，此时，反射光最强。从而，可以根据光的波长或者k的数值设置第二无机封装层163的厚度，使反射光最强以提高光的传播反射率，提高发光组件100的发光亮度和发光效率。当然，本公开实施例对此不作限定。例如，也可以使得d3sinθ不等于±(2k+1)λ/2，以设置第二无机封装层163的厚度。
在一些示例中，如图4和图10A所示，对于入射至第一无机封装层161、有机封装层162、第二无机封装层163的入射角为θ的光，可以使得d1sinθ＝d2sinθ，且均不等于±(2k+1)λ/2。例如，可以使得d1sinθ＝d2sinθ＝±kλ。当然，本公开实施例对此不作限制。例如，也可以使得d1sinθ＝d3sinθ，且均不等于±(2k+1)λ/2。例如，可以使得d1sinθ＝d3sinθ＝±kλ。例如，也可以使得d2sinθ＝d3sinθ，且均不等于±(2k+1)λ/2。例如，可以使得d2sinθ＝d3sinθ＝±kλ。
在一些示例中，如图4和图10A所示，对于入射至第一无机封装层161、有机封装层162、第二无机封装层163的入射角为θ的光，可以使得d1sinθ＝d2sinθ＝d3sinθ，且均不等于±(2k+1)λ/2。
在一些示例中，如图4和图10A所示，对于入射至第一无机封装层161、有机封装层162、第二无机封装层163的入射角为θ的光，可以使得d1sinθ＝d2sinθ＝d3sinθ＝±kλ。
在一些示例中，如图4所示，发光组件100还包括光学胶170和盖板180，光学胶170设置在封装层160远离第二电极124的一侧，盖板180设置在光学胶170远离封装层160的一侧。
例如，光学胶的折射率大于或等于第二无机封装层的折射率。例如，光学胶的折射率可以大于第二无机封装层的折射率，从而，可以利用光的全反射原理，提高光的传播反射率，提高发光组件100的发光亮度和发光效率。
图11为本公开一实施例提供的另一种发光组件的结构示意图。如图11所示，该发光组件100包括衬底基板110和设置在衬底基板110上的发光器件120。发光器件120包括第一电极121、发光限定层122、发光功能层123、第二电极124和辅助电极125，发光限定层122设置在第一电极121远离衬底基 板110的一侧，且包括暴露第一电极121的发光开口1220，发光功能层123设置在发光限定层122远离衬底基板110的一侧，第二电极124设置在发光功能层123远离第一电极121的一侧，辅助电极125设置在第二电极124远离发光功能层123的一侧。发光功能层123包括发光功能部1230，发光功能部1230设置在发光开口1220并与暴露的第一电极121接触。辅助电极125包括透光开口1250，透光开口1250在衬底基板110上的正投影与发光功能部1230在衬底基板110上的正投影交叠。该发光组件100的有益技术效果参见前文，在此不再赘述。
例如，该示例中的透光开口同前文中的透光开口，在此不再赘述。
例如，可以先形成辅助电极，然后再形成透光开口。本公开实施例对透光开口的形成工艺不作限定。例如，可以采用刻蚀工艺形成透光开口。例如，可以采用激光刻蚀工艺形成透光开口。
本公开实施例还提供一种车灯。图12为本公开一实施例提供的一种车灯的示意图。如图12所示，该车灯200包括前文的任一发光组件100，从而，该车灯200具有上文的发光组件100的有益技术效果对应的有益技术效果，在此不再赘述。
例如，该车灯可以是车尾灯。例如，该车灯可以是汽车尾灯。当然，本公开实施例对此不作限定。
图13为本公开一实施例提供的另一种车灯的结构示意图。如图13所示，该车灯200该车灯还包括透光组件210和底板220，发光组件100设置在透光组件210和底板220之间，发光组件100的第一电极位于衬底基板远离透光组件210的一侧。透光组件210从衬底基板发出的光线经过透光组件210透出，从而，该车灯200可以发光。需要说明的是，图中仅示意性的示出了发光组件100、透光组件210和底板220的相对位置关系，对发光组件100、透光组件210和底板220的连接关系、形状、距离、尺寸等均不作限定。
在一些示例中，如图13所示，底板220上包括纹路221。在发光组件100不发光时，由于发光组件100的辅助电极包括透光开口，光从车灯200的外部依次经由透光组件210和发光组件100的透光开口后，可以入射至底板220上，车灯200的外部为透光组件210远离发光组件100的一侧，从而，从车灯200的外部可以看到底板220的纹路221，由此，可以扩展该发光组件的应用效果。图中仅示意性的示出了底板220上包括纹路221，对纹路221的形 状、样式、在底板220上的位置等均不作限定。
本公开实施例还提供一种发光组件的制作方法。图14为本公开一实施例提供的一种发光组件的制作方法。如图14所示，该制作方法包括：
S100：在衬底基板上形成第一电极；
S200：在第一电极远离衬底基板的一侧形成发光限定层，发光限定层包括暴露第一电极的发光开口；
S300：在发光限定层远离衬底基板的一侧形成发光功能层；
S400：在发光功能层远离发光限定层的一侧形成第二电极；
S500：在第二电极远离发光功能层的一侧形成辅助电极，第一电极、发光限定层、发光功能层、第二电极和辅助电极形成位于衬底基板上的发光器件，发光功能层包括发光功能部，发光功能部设置在发光开口并与暴露的第一电极接触，辅助电极包括透光开口，透光开口在衬底基板上的正投影与发光功能部在衬底基板上的正投影交叠。
在本公开实施例提供的发光组件的制作方法中，第二电极远离发光功能层的一侧设置有辅助电极，一方面，辅助电极的设置可以降低电阻，降低跨压，最终实现降低温升，提高发光组件的寿命的技术效果；另一方面，辅助电极的设置还可以避免形成过厚的第二电极，由此，可以减小形成第二电极的时间，降低形成第二电极的产能损失；再一方面，可以在辅助电极上设置透光开口，从而，可以提高该发光组件的寿命和发光亮度，扩展该发光组件的应用效果。
在本公开实施例提供的发光组件的制作方法中，辅助电极上设置有透光开口，透光开口在衬底基板上的正投影与发光功能部在衬底基板上的正投影交叠，发光功能部发出的光的一部分在透过第二电极之后，可通过该透光开口。该透光开口的设置可以提高辅助电极的透光率，减小辅助电极吸收发光功能部发出的光带来的电极发热问题，从而可以降低电极发热对发光组件的寿命的影响；辅助电极在除了透光开口的其他位置还可以对发光功能部发出的光进行反射，保证了发光组件的亮度问题。从而，该透光开口的设置可以平衡辅助电极的透光率和反射率，保证了发光组件的寿命和发光亮度。例如，通过设置透光开口的尺寸，在保证设计寿命的前提下，可以尽量提高发光亮度；或者，在保证设计的发光亮度的前提下，尽量提高使用寿命。
在本公开实施例提供的发光组件中，透光开口增加了辅助电极的透光率，在发光组件不发光时，可以透过辅助电极看到发光组件远离衬底基板一侧的 造型设计，实现透明效果，从而可以扩展该发光组件的应用效果。
在一些示例中，在第二电极远离发光功能层的一侧形成辅助电极，包括：在第二电极上形成电极图案化结构；在第二电极上形成包括透光开口的辅助电极，电极图案化结构被配置为使辅助电极的材料不附着在电极图案化结构上，且电极图案化结构的透光率不小于50％，透光开口至少暴露电极图案化结构的一部分。
在该示例中，由于辅助电极的材料不附着在电极图案化结构上，电极图案化结构的材料不粘辅助电极的材料，在有电极图案化结构的位置，辅助电极很难附着，从而可以实现辅助电极的图案化。通过电极图案化结构可以简单方便的在电极图案化结构所在的位置处形成透光开口，工艺简单，避免了采用其他方法在辅助电极上形成透光开口对辅助电极带来不良影响。另外，电极图案化结构可以使得辅助电极所在的层平整，使得后续的封装工艺更加稳定和可靠。
例如，电极图案化结构在衬底基板上的正投影与发光功能部在衬底基板上的正投影交叠。例如，电极图案化结构在衬底基板上的正投影与第一电极在衬底基板上的正投影交叠。
例如，可以先蒸镀第二电极层，然后在第二电极层上蒸镀电极图案化结构，最后在蒸镀一层辅助电极，由于辅助电极的材料不附着在电极图案化结构上，在电极图案化结构的位置，没有辅助电极，从而，在电极图案化结构处形成了透光开口。
在一些示例中，在第二电极远离发光功能层的一侧形成辅助电极，包括：在第二电极远离发光功能层的一侧形成辅助电极材料层；对辅助电极材料层进行开孔以形成包括透光开口的辅助电极。本公开实施例对透光开口的形成工艺不作限定。例如，可以采用刻蚀工艺。例如，可以采用激光刻蚀工艺。
在一些示例中，发光组件还包括设置在辅助电极远离第二电极一侧的封装层，封装层包括层叠设置的第一无机封装层、有机封装层和第二无机封装层，有机封装层设置在第一无机封装层远离辅助电极的一侧，第二无机封装层设置在有机封装层远离第一无机封装层的一侧。制作方法还包括：采用原子层沉积工艺形成第一无机封装层和第二无机封装层中的至少一层。
在该示例中，原子层沉积工艺具有更好的填充性能，可以在非平坦的表面蒸镀一层厚度均一性更高且非常致密的薄膜层，其厚度均一性相比传统的封装工艺有显著的提高，例如，厚度均一性可以达到90％以上，例如，厚度均一 性可以达到95％以上。原子层沉积工艺具有更好的包裹性和覆盖性，不仅可以更好的包裹产线中或者蒸镀第二电极时带来的颗粒物，而且可以有效阻碍外部环境中的水氧、硫化物的浸入腐蚀，从而，可以显著提高封装的信赖性。
例如，可以采用原子层沉积工艺形成第一无机封装层，采用喷墨打印(Ink Jet Printing，IJP)工艺形成有机封装层，采用化学气相沉积(Chemical Vapor Deposition，CVD)工艺形成第二无机封装层。
例如，第一无机封装层的材料包括氧化铝(Al2O3)或者氧化硅(SiO2)。例如，第二无机封装层的材料包括氮化硅(SiNx)。
例如，第一无机封装层的厚度在几十纳米范围内。例如，第一无机封装层的厚度为50nm。例如，第二无机封装层的厚度在几百纳米范围内。例如，第二无机封装层的厚度为600nm。例如，有机封装层的厚度在几微米范围内。例如，有机封装层的厚度为8μm。
例如，封装层还包括设置在第一无机封装层和有机封装层之间的第三无机封装层。例如，可以采用原子层沉积工艺形成第一无机封装层，采用化学气相沉积工艺形成第三无机封装层，采用喷墨打印(Ink Jet Printing，IJP)工艺形成有机封装层，采用化学气相沉积工艺形成第二无机封装层。例如，第二无机封装层和第三无机封装层的厚度分别为300nm。
有以下几点需要说明：
(1)本公开实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)在不冲突的情况下，本公开同一实施例及不同实施例中的特征可以相互组合。
以上，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以权利要求的保护范围为准。

Claims (20)

  1. 一种发光组件，包括衬底基板和设置在所述衬底基板上的发光器件，其中，所述发光器件包括：
    第一电极；
    发光限定层，设置在所述第一电极远离所述衬底基板的一侧，且包括暴露所述第一电极的发光开口；
    发光功能层，设置在所述发光限定层远离所述衬底基板的一侧；
    第二电极，设置在所述发光功能层远离所述第一电极的一侧；以及
    辅助电极，设置在所述第二电极远离所述发光功能层的一侧，
    其中，所述发光功能层包括发光功能部，所述发光功能部设置在所述发光开口内并与暴露的所述第一电极接触；
    所述辅助电极包括透光开口，所述透光开口在所述衬底基板上的正投影与所述发光功能部在所述衬底基板上的正投影交叠。
  2. 根据权利要求1所述的发光组件，其中，所述透光开口在所述衬底基板上的正投影的面积与所述发光功能部在所述衬底基板上的正投影的面积的比值不小于1/5。
  3. 根据权利要求1所述的发光组件，还包括：
    电极图案化结构，
    其中，所述电极图案化结构被配置为使所述辅助电极的材料不附着在所述电极图案化结构上，且所述电极图案化结构的透光率不小于50％，所述透光开口至少暴露所述电极图案化结构的一部分。
  4. 根据权利要求3所述的发光组件，其中，所述电极图案化结构的材料包括有机含氟材料。
  5. 根据权利要求3所述的发光组件，其中，所述电极图案化结构在垂直于所述衬底基板的方向上的尺寸与所述辅助电极在垂直于所述衬底基板的方向上的尺寸的比值的取值范围为0.7至1.3。
  6. 根据权利要求3所述的发光组件，其中，所述电极图案化结构在所述衬底基板上的正投影与所述发光功能部在所述衬底基板上的正投影交叠。
  7. 根据权利要求1-6任一项所述的发光组件，其中，所述辅助电极的反射率大于所述第二电极的反射率。
  8. 根据权利要求1-7任一项所述的发光组件，其中，所述第二电极的材料包括铝，所述第二电极的厚度的取值范围为50-300埃，所述辅助电极的材料包括镁银合金或镁铝合金，所述辅助电极的厚度的取值范围为500-2000埃。
  9. 根据权利要求1-8任一项所述的发光组件，还包括：
    缓冲层，设置在所述衬底基板上；
    金属走线层，设置在所述缓冲层远离所述衬底基板的一侧；
    钝化层，设置在所述金属走线层远离所述衬底基板的一侧，且包括暴露所述金属走线层的连接开口；以及
    金属连接线，设置在所述连接开口内并与暴露的所述金属走线层相连，
    其中，所述金属连接线与所述第一电极相连。
  10. 根据权利要求9所述的发光组件，其中，所述金属走线层包括多条金属走线，所述透光开口在所述衬底基板上的正投影与所述多条金属走线在所述衬底基板上的正投影不交叠。
  11. 根据权利要求1-10任一项所述的发光组件，还包括设置在所述辅助电极远离所述第二电极一侧的封装层，其中，所述封装层包括层叠设置的第一无机封装层、有机封装层和第二无机封装层，所述有机封装层设置在所述第一无机封装层远离所述辅助电极的一侧，所述第二无机封装层设置在所述有机封装层远离所述第一无机封装层的一侧，
    所述第一无机封装层和所述第二无机封装层中的至少一层的厚度均一性不小于60％。
  12. 根据权利要求11所述的发光组件，其中，所述有机封装层的折射率大于所述第一无机封装层的折射率，所述第二无机封装层的折射率大于所述有机封装层的折射率。
  13. 根据权利要求12所述的发光组件，其中，所述第一无机封装层的折射率大于1.4，所述有机封装层的折射率大于1.6，所述第二无机封装层的折射率大于1.7。
  14. 根据权利要求11-13任一项所述的发光组件，其中，入射至所述第一无机封装层、所述有机封装层、所述第二无机封装层的光的入射角为θ，所述第一无机封装层、所述有机封装层、所述第二无机封装层的厚度分别为d1，d2和d3，d1，d2和d3满足下面公式：
    d1sinθ＝d2sinθ＝d3sinθ，且均不等于±(2k+1)λ/2,
    其中，λ为所述发光功能部发出的光的波长，θ的取值范围为0度至90度之间，k为大于或者等于0的整数。
  15. 根据权利要求14所述的发光组件，其中，d1，d2和d3满足下面公式：
    d1sinθ＝d2sinθ＝d3sinθ＝±kλ。
  16. 根据权利要求11-15任一项所述的发光组件，还包括：
    光学胶，设置在所述封装层远离所述第二电极的一侧；以及
    盖板，设置在所述光学胶远离所述封装层的一侧，
    其中，所述光学胶的折射率大于或等于所述第二无机封装层的折射率。
  17. 一种车灯，包括根据权利要求1-16任一项所述的发光组件。
  18. 一种发光组件的制作方法，包括：
    在衬底基板上形成第一电极；
    在所述第一电极远离所述衬底基板的一侧形成发光限定层，所述发光限定层包括暴露所述第一电极的发光开口；
    在所述发光限定层远离所述衬底基板的一侧形成发光功能层；
    在所述发光功能层远离所述发光限定层的一侧形成第二电极；以及
    在所述第二电极远离所述发光功能层的一侧形成辅助电极，
    其中，所述第一电极、所述发光限定层、所述发光功能层、所述第二电极和所述辅助电极形成位于所述衬底基板上的发光器件，所述发光功能层包括发光功能部，所述发光功能部设置在所述发光开口并与暴露的所述的第一电极接触，
    所述辅助电极包括透光开口，所述透光开口在所述衬底基板上的正投影与所述发光功能部在所述衬底基板上的正投影交叠。
  19. 根据权利要求18所述的制作方法，其中，所述在所述第二电极远离所述发光功能层的一侧形成辅助电极，包括：
    在所述第二电极上形成电极图案化结构；以及
    在所述第二电极上形成包括所述透光开口的所述辅助电极，
    其中，所述电极图案化结构被配置为使所述辅助电极的材料不附着在所述电极图案化结构上，且所述电极图案化结构的透光率不小于50％，所述透光开口暴露所述电极图案化结构。
  20. 根据权利要求18或19所述的制作方法，其中，所述发光组件还包 括设置在所述辅助电极远离所述第二电极一侧的封装层，所述封装层包括层叠设置的第一无机封装层、有机封装层和第二无机封装层，所述有机封装层设置在所述第一无机封装层远离所述辅助电极的一侧，所述第二无机封装层设置在所述有机封装层远离所述第一无机封装层的一侧，
    所述制作方法还包括：
    采用原子层沉积工艺形成所述第一无机封装层和所述第二无机封装层中的至少一层。
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CN111682121A (zh) * 2020-06-23 2020-09-18 京东方科技集团股份有限公司 显示背板及其制作方法和显示装置
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