CN113748515A - 显示面板和显示装置 - Google Patents
显示面板和显示装置 Download PDFInfo
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- CN113748515A CN113748515A CN202080000400.6A CN202080000400A CN113748515A CN 113748515 A CN113748515 A CN 113748515A CN 202080000400 A CN202080000400 A CN 202080000400A CN 113748515 A CN113748515 A CN 113748515A
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 128
- 239000002184 metal Substances 0.000 claims description 128
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 19
- 239000010410 layer Substances 0.000 description 454
- 238000005530 etching Methods 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000007772 electrode material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80521—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本公开提供了一种显示面板和显示装置，属于显示技术领域。显示面板包括依次层叠的驱动背板、第一绝缘层和发光器件层。驱动背板包括第一反射电极层；第一反射电极层包括位于显示区的第一主反射电极和位于外围区的第一辅助反射电极；发光器件层包括第二反射电极层，第二反射电极层包括位于显示区的第二主反射电极和位于外围区的第二辅助反射电极；各个第二主反射电极和各个第一主反射电极一一对应的电连接；且第二主反射电极在第一反射电极层的正投影，位于对应的第一主反射电极内。该显示面板可以提高显示面板的显示效果。
Description
PCT国内申请，说明书已公开。
Claims (27)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/081880 WO2021189495A1 (zh) | 2020-03-27 | 2020-03-27 | 显示面板和显示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113748515A true CN113748515A (zh) | 2021-12-03 |
| CN113748515B CN113748515B (zh) | 2023-06-30 |
Family
ID=77890857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080000400.6A Active CN113748515B (zh) | 2020-03-27 | 2020-03-27 | 显示面板和显示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11980047B2 (zh) |
| EP (1) | EP4131394A4 (zh) |
| CN (1) | CN113748515B (zh) |
| WO (1) | WO2021189495A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211077A (zh) * | 2006-12-28 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶微显示器及其形成方法 |
| US20170131594A1 (en) * | 2015-11-11 | 2017-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| CN110459699A (zh) * | 2019-08-30 | 2019-11-15 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
| CN110473895A (zh) * | 2018-05-09 | 2019-11-19 | 京东方科技集团股份有限公司 | 一种oled显示基板及其制作方法、显示装置 |
| CN110610975A (zh) * | 2019-09-23 | 2019-12-24 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501303B2 (en) * | 2001-11-05 | 2009-03-10 | The Trustees Of Boston University | Reflective layer buried in silicon and method of fabrication |
| KR102545253B1 (ko) | 2015-05-28 | 2023-06-19 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR101980780B1 (ko) | 2016-10-31 | 2019-05-21 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR20180079097A (ko) | 2016-12-30 | 2018-07-10 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2019179716A (ja) | 2018-03-30 | 2019-10-17 | 大日本印刷株式会社 | 有機エレクトロルミネッセンス表示装置、有機エレクトロルミネッセンス表示装置の製造方法、およびナノインプリント用モールド |
-
2020
- 2020-03-27 EP EP20900713.7A patent/EP4131394A4/en active Pending
- 2020-03-27 WO PCT/CN2020/081880 patent/WO2021189495A1/zh unknown
- 2020-03-27 CN CN202080000400.6A patent/CN113748515B/zh active Active
- 2020-03-27 US US17/259,238 patent/US11980047B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211077A (zh) * | 2006-12-28 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶微显示器及其形成方法 |
| US20170131594A1 (en) * | 2015-11-11 | 2017-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| CN110473895A (zh) * | 2018-05-09 | 2019-11-19 | 京东方科技集团股份有限公司 | 一种oled显示基板及其制作方法、显示装置 |
| CN110459699A (zh) * | 2019-08-30 | 2019-11-15 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
| CN110610975A (zh) * | 2019-09-23 | 2019-12-24 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021189495A1 (zh) | 2021-09-30 |
| US11980047B2 (en) | 2024-05-07 |
| CN113748515B (zh) | 2023-06-30 |
| EP4131394A4 (en) | 2023-05-03 |
| US20220140277A1 (en) | 2022-05-05 |
| EP4131394A1 (en) | 2023-02-08 |
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