WO2025112883A1 - 电镀夹具、电镀装置及电镀夹具检测方法 - Google Patents

电镀夹具、电镀装置及电镀夹具检测方法 Download PDF

Info

Publication number
WO2025112883A1
WO2025112883A1 PCT/CN2024/122101 CN2024122101W WO2025112883A1 WO 2025112883 A1 WO2025112883 A1 WO 2025112883A1 CN 2024122101 W CN2024122101 W CN 2024122101W WO 2025112883 A1 WO2025112883 A1 WO 2025112883A1
Authority
WO
WIPO (PCT)
Prior art keywords
electroplating
sealing ring
clamping tube
electroplating fixture
clamping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/122101
Other languages
English (en)
French (fr)
Inventor
贾照伟
代兰奎
杨宏超
王坚
王晖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Shanghai Inc
Original Assignee
ACM Research Shanghai Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ACM Research Shanghai Inc filed Critical ACM Research Shanghai Inc
Publication of WO2025112883A1 publication Critical patent/WO2025112883A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C25D17/08—Supporting racks, i.e. not for suspending
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/04—Removal of gases or vapours ; Gas or pressure control
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M13/00—Testing of machine parts
    • G01M13/005—Sealing rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches

Definitions

  • the present application relates to the field of semiconductor technology, and in particular to an electroplating fixture, an electroplating device and an electroplating method.
  • rack plating is to immerse the wafer vertically in the plating solution, and one plating tank can carry out electroplating on multiple wafers at the same time.
  • Cup plating is to cover the wafer in a cup-shaped plating tank, and the electroplating process is carried out in a cup-by-piece manner.
  • rack plating the single-piece process of cup plating is more controllable and is an important development direction for high-quality electroplating technology.
  • advanced cup plating processes it is usually necessary to reliably seal the edge of the wafer with a sealing ring so that the plating solution does not contact the edge of the wafer and the back of the wafer to be plated.
  • the rubber sealing ring will age and gradually become damaged in some parts, especially the smaller damage to the rubber sealing ring is difficult to detect with the naked eye, resulting in electroplating failure.
  • the embodiments of the present application provide an electroplating fixture, an electroplating device, and an electroplating method, which can detect damage on a sealing component at least to a certain extent.
  • the present application provides an electroplating fixture, comprising: a clamping cylinder, the inner wall of which is provided with an annular boss, the annular boss being used to support a wafer; a sealing ring, which wraps the annular boss and extends from the annular boss to the wall of the clamping cylinder; an air duct is provided in the wall of the clamping cylinder, the air duct opening of the air duct is provided at the position where the clamping cylinder is wrapped by the sealing ring, and the sealing ring is detected to be damaged by evacuating the air duct.
  • a clamping tube opening groove is provided at the position where the clamping tube is wrapped by the sealing ring, and the clamping tube opening groove is connected to the airway through the airway opening.
  • the opening groove of the clamping tube is arranged around the clamping tube.
  • each of the opening grooves of the clamping tube is connected to at least one air passage, and the plurality of opening grooves of the clamping tube are arranged at intervals.
  • the sealing ring extends from the annular boss to the inner wall of the clamping cylinder.
  • the electroplating fixture also includes a fixture inner ring, which is arranged on the inner side of the clamping cylinder and covers the first edge of the sealing ring located on the inner wall of the clamping cylinder.
  • an inner wall of the clamping cylinder is provided with an internal step structure, the first edge is located at the internal step structure, and the inner ring of the clamp covers the first edge at the internal step structure.
  • the sealing ring extends from the annular boss to the outer wall of the clamping tube
  • the electroplating fixture further comprises a fixture shield, which is arranged outside the clamping tube and covers the second edge of the sealing ring located on the outer wall of the clamping tube.
  • an outer wall of the clamping cylinder is provided with an external step structure
  • the second edge of the sealing ring is located at the external step structure
  • the clamp shield covers the second edge at the external step structure.
  • the electroplating fixture further comprises a rotating circular plate provided with an exhaust device, the rotating circular plate is connected to the clamping cylinder via a fixture connector, and the air passage is also arranged in the rotating circular plate and the fixture connector.
  • the present application provides an electroplating device, comprising: an electroplating tank; and an electroplating fixture as described in any of the above items, wherein the electroplating fixture is used to make the surface of the wafer to be electroplated face the electroplating tank.
  • the present application provides an electroplating fixture detection method, which is applied to the electroplating fixture as described in any of the above items, including: evacuating the air duct arranged in the electroplating fixture and detecting the exhaust flow; based on the exhaust flow, counting the gas flow change at the air duct opening covered by the sealing ring; based on the gas flow change, judging whether the sealing ring is damaged.
  • the present application provides an electroplating fixture detection method, which is applied to an electroplating fixture as described in any of the above items, comprising: evacuating the air duct arranged in the electroplating fixture and detecting the evacuated air pressure; based on the evacuated air pressure, counting the gas pressure changes at the air duct opening covered by the sealing ring; and judging whether the sealing ring is damaged based on the gas pressure changes.
  • FIG1 is a schematic diagram showing the structure of an electroplating fixture according to an embodiment of the present application.
  • FIG2 shows a schematic structural diagram of a clamping tube and a clamp connecting member according to an embodiment of the present application
  • FIG3 is a schematic diagram showing a partial structure of a clamping tube and a clamp connecting member according to an embodiment of the present application
  • FIG4 is a schematic diagram showing a partial structure of a clamping tube and a clamp connecting member according to an embodiment of the present application
  • FIG5 is a schematic diagram showing the structure of a clamping tube and a clamp connecting piece according to an embodiment of the present application
  • FIG6 shows a schematic diagram of the structure of an electroplating fixture according to an embodiment of the present application.
  • FIG7 shows a schematic structural diagram of an electroplating device according to an embodiment of the present application.
  • FIG8 is a schematic diagram showing a process flow of an electroplating method according to an embodiment of the present application.
  • FIG. 9 shows a schematic flow chart of an electroplating method according to an embodiment of the present application.
  • this embodiment provides an electroplating fixture 1 , which can detect whether a sealing ring 15 in the electroplating fixture 1 is damaged.
  • the electroplating fixture 1 includes a clamping cylinder 11, a power assembly 12 for driving the clamping cylinder 11 to rotate, a rotating circular plate 13 and a clamp connector 14.
  • the clamping cylinder 11 is cylindrical and has two ends along its axial direction.
  • An annular boss 111 is convexly provided on the inner wall of the lower end of the clamping cylinder 11 shown in FIG1 .
  • the wafer 2 is arranged in the clamping cylinder 11, and the edge of the surface to be electroplated of the wafer 2 is supported by the annular boss 111.
  • the power assembly 12 includes a rotating driving member, and the power assembly 12 is arranged at the center of the rotating circular plate 13.
  • the rotating circular plate 13 is connected to the other end of the clamping cylinder 11 through the clamp connector 14.
  • the power assembly 12 drives the clamping cylinder 11 to rotate through the rotating circular plate 13 and the clamp connector 14, so that the wafer 2 rotates during electroplating, so that the wafer 2 can be electroplated evenly.
  • the clamp connector 14 can be one or more. When there are multiple clamp connectors 14, the multiple clamp connectors 14 are evenly distributed along the circumference of the rotating circular plate 13, so that the rotating circular plate 13 and the clamping cylinder 11 are stably connected.
  • the clamp connector 14 can be at least two connecting rods, which are evenly distributed along the circumference of the rotating circular plate 13, or two connecting rods can be a group, and the two groups of connecting rods are symmetrically arranged on both sides of the rotating circular plate 13.
  • Each group of connecting rods can also form a connecting frame, and the connection area between the connecting frame and the rotating circular plate 13 is larger, and the connection area between the connecting frame and the clamping cylinder 11 is larger, which can increase the connection strength.
  • the clamp connector 14 can also be a connecting plate, a connecting block or other structures.
  • the clamping cylinder 11 is a cylindrical cylinder, and the inner wall diameter of the lower end of the clamping cylinder 11 is equal to the diameter of the wafer 2.
  • the diameter of the hole formed on the inner wall of the annular boss 111 is slightly smaller than the diameter of the wafer 2, so that the clamping cylinder 11 contacts the edge of the wafer to position the wafer 2, and the annular boss 111 supports the edge of the wafer to be electroplated, so that the electroplating fixture 1 can stably clamp the wafer 2.
  • the diameter of the end of the clamping cylinder 11 away from the annular boss 111 is greater than the diameter of the wafer 2, so that the wafer 2 can be placed in the clamping cylinder 11 conveniently.
  • At least one section of the inner wall of the clamping cylinder can be inclined, which can provide a guiding effect for the wafer 2.
  • the annular boss 111 can be integrally arranged with the clamping cylinder 11. In other embodiments of the embodiments of the present application, the annular boss 111 can be connected to the clamping cylinder 11 by welding, bonding, etc.
  • the electroplating fixture 1 further includes a sealing ring 15, which wraps around the annular boss 111 so that the annular boss 111 can contact the wafer 2 through the sealing ring 15.
  • the electroplating fixture 1 further includes a fixture inner ring 16, which is arranged on the inner side of the clamping cylinder, and a fixture shield 17, which is arranged on the outer side of the clamping cylinder.
  • the sealing ring 15 extends from the annular boss 111 to the inner wall and the outer wall of the clamping cylinder.
  • the edge 151 is pressed by the inner ring 16 of the clamp, and the second edge 152 of the sealing ring on the outer wall of the clamping tube is pressed by the clamp shield 17 to fix the position of the sealing ring 15.
  • the sealing ring 15 extends toward the inner wall of the clamping tube, the inner wall of the clamping tube contacts the edge of the wafer through the sealing ring 15, so that the sealing effect of the wafer edge is better. Furthermore, an internal step structure is provided on the inner wall of the clamping tube, and the first edge 151 of the sealing ring on the inner wall of the clamping tube extends to the internal step structure, and the first edge 151 of the sealing ring is pressed by the inner ring 16 of the clamp at the internal step structure, so that the sealing ring 15 is better fixed.
  • an external step structure can be provided on the outer wall of the clamping tube, and the second edge 152 of the sealing ring on the outer wall of the clamping tube is pressed by the clamp shield 17 at the external step structure, so that the sealing ring 15 is better fixed.
  • the external step structure is provided with a plurality of annular grooves 112, and the sealing ring 15 is made of an elastic material such as rubber, and when the sealing ring 15 is pressed, it will be compressed into the annular groove 112, so that the second edge 152 of the sealing ring is wavy, thereby better fixing the sealing ring 15.
  • the annular groove 112 can also be provided on the internal step structure, the clamp inner ring 16 and/or the clamp shield 17, and the number of the annular groove 112 can also be one.
  • An air channel 113 is provided in the wall of the clamping tube 11, and an air channel opening 114 of the air channel 113 is provided at a position where the clamping tube 11 is wrapped by the sealing ring 15.
  • the air channel 113 is also connected to a vacuum device (not shown), so that when the vacuum device is used to vacuum the air channel 113, it is possible to determine whether the sealing ring 15 at the position of the air channel opening 114 is damaged according to the change in the gas flow or air pressure in the air channel 113.
  • the sealing ring 15 is provided to fit the clamping tube 11, but the sealing ring 15 is made of elastic material, and the elasticity of the sealing ring 15 may deteriorate due to aging and other reasons, thereby causing a micrometer-level gap between the sealing ring 15 and the clamping tube 11. Therefore, vacuuming the air channel 113 can not only determine whether the sealing ring 15 at the position of the air channel opening 114 is damaged, but also detect whether the entire sealing ring 15 is damaged through the gap.
  • the air passage 113 also extends from the inner wall of the clamping tube 11 to the fixture connector 14 and the rotating circular plate 13 until it is connected to the air extraction device in the power assembly 12.
  • the air passage 113 in the clamping tube 11 can be one or more, and accordingly, the air passage 113 in the clamp connector 14 can also be one or more, and the air passage 113 in the rotating circular plate 13 can also be one or more.
  • the air passage 113 can be arranged in the connecting rod.
  • the air extraction device is arranged outside the electroplating fixture 1.
  • the airway 113 extends to the inside of the annular boss 111, and the airway opening 114 is arranged at the position where the annular boss 111 is wrapped by the sealing ring 15.
  • there are multiple airway openings 114 and the multiple airway openings 114 are distributed in the annular boss 111.
  • the wafer 2 makes the sealing ring 15 close to the supporting surface under the action of gravity, and the airway openings 114 distributed on both sides of the supporting surface can respectively detect the sealing rings 15 located on both sides of the supporting surface, so as to better judge whether the sealing ring 15 is damaged.
  • Multiple airway openings 114 can also be arranged around the clamping cylinder 11 or the annular boss 111, so as to detect whether the sealing ring 15 is damaged from more directions.
  • the gas flow rate when the sealing ring 15 is intact, the gas flow rate will be smaller than when it is damaged. For example, it may be less than 3 standard liters per minute (sccm), and will gradually decrease as the airway 113 is evacuated until the flow rate approaches 0; when the sealing ring 15 is damaged, the damage will cause the gas to continue to enter the airway 113, the gas flow rate will be larger than when it is not damaged, and there will be no obvious change as the airway 113 is evacuated. For example, it may be maintained at 5 sccm.
  • sccm standard liters per minute
  • the gas pressure when the sealing ring 15 is intact, the gas pressure will be greater than when it is damaged, and the gas pressure will gradually increase as the airway 113 is evacuated until it cannot be evacuated; when the sealing ring 15 is damaged, the damage will cause the gas to continue to enter the airway 113, the gas pressure will be smaller than when it is not damaged, and there will be no obvious change as the airway 113 is evacuated.
  • a clamping cylinder opening groove 115 with a notch facing the sealing ring 15 is provided at the position where the clamping cylinder 11 is wrapped by the sealing ring 15.
  • the clamping cylinder opening groove 115 is connected to the airway 113 through the airway opening 114, that is, the airway opening 114 is arranged in the clamping cylinder opening groove 115, and the airway 113 draws air through the notch of the clamping cylinder opening groove 115, which can increase the range of detecting the sealing ring 15.
  • the clamping tube opening groove 115 is an annular opening groove arranged along the clamping tube 11, so that the sealing ring 15 can be detected from more directions.
  • each air passage 113 is connected to a different position of the annular opening groove.
  • each clamping tube opening groove 115 is connected to at least one air passage 113, and each air passage 113 is connected to a suction device, which can control the opening and closing of each air passage 113 to detect the sealing ring 15 through each clamping tube opening groove 115.
  • Multiple clamping tube opening grooves 115 are arranged at intervals to reduce the impact on the strength of the clamping tube 11, and multiple clamping tube opening grooves 115 are arranged along the circumferential direction of the clamping tube 11. In other embodiments of the present application, multiple clamping tube opening grooves 115 can be arranged along the axial direction of the clamping tube 11.
  • a boss opening groove with a notch facing the sealing ring 15 is provided at the position where the annular boss 111 is wrapped by the sealing ring 15.
  • the structure of the boss opening groove is similar to the clamping tube opening groove 115.
  • the specific structure can be referred to the setting of the clamping tube opening groove 115, which will not be repeated here.
  • the electroplating fixture 1 also includes a wafer pressing block 18, which is disposed in the clamping tube 11 and is used to apply pressure to the back side of the wafer 2 away from the surface to be electroplated, so that the edge of the wafer fits tightly against the annular boss 111, thereby achieving a better sealing effect.
  • the end face size of the wafer pressing block 18 used to press the wafer 2 is the same as the size of the wafer 2, so that the force is evenly applied to all parts of the wafer 2, thereby improving the flatness of the electroplating.
  • a protrusion is provided on the edge of one end of the wafer pressing block 18 away from the wafer 2 in a direction away from the wafer 2, the protrusion extends to one end of the clamping tube 11 away from the annular boss 111, and a bending structure is provided on the end face of the clamping tube 11 away from the annular boss 111, and the bending structure is clamped on the end face of the clamping tube 11 away from the annular boss 111, thereby limiting the position of the wafer pressing block 18.
  • the distance between the end face of the wafer pressing block 18 used to press the wafer 2 and the annular boss 111 is the thickness of a wafer 2, that is, the difference between the distance between the clamping surface of the bending structure of the wafer pressing block 18 and the end face of the wafer pressing block 18 used to press the wafer 2 minus the height of the clamping tube 11 is equal to the thickness of a wafer 2, so as to prevent the wafer pressing block 18 from excessively squeezing the wafer 2 and causing damage to the wafer 2.
  • this embodiment further provides an electroplating device, including the electroplating fixture 1 as described above.
  • the electroplating device also includes a plating tank 3 filled with a plating liquid.
  • the electroplating fixture 1 clamps the edge of the wafer 2, the surface of the wafer to be plated faces the plating tank 3, so that when the electroplating fixture 1 clamps the wafer 2 and moves into the plating tank 3, the surface of the wafer to be plated is immersed in the plating tank 3 for cup plating.
  • this embodiment further provides a method for detecting an electroplating fixture, which is performed by the electroplating fixture 1 or the electroplating device described above.
  • the electroplating fixture detection method includes at least steps S110 to S130, which are specifically described as follows:
  • the change in the air extraction flow rate is the change in the gas flow rate at the airway opening 114 covered by the sealing ring 15 .
  • the gas flow rate When the sealing ring 15 is intact, the gas flow rate will be smaller than when it is damaged. For example, it may be less than 3 standard liter per minute flow value (stard liter per minute, sccm), and as the gas passage 113 is evacuated, the flow rate will gradually decrease until it approaches 0; when the sealing ring 15 is damaged, the damage will allow gas to continue to enter the gas passage 113, and the gas flow rate will be larger than when it is not damaged, and there will be no obvious change as the gas passage 113 is evacuated. For example, it may be maintained at 5 sccm.
  • Step S110 may be performed before the electroplating fixture 1 clamps the wafer 2 , or may be performed during the process of the electroplating fixture 1 clamping the wafer 2 .
  • the gas passage 113 is evacuated to obtain the change in gas flow at the gas passage opening 114 covered by the sealing ring 15 to determine whether gas continues to enter, thereby determining whether the sealing ring 15 is damaged.
  • this embodiment further provides a method for detecting an electroplating fixture, which is performed by the electroplating fixture 1 or the electroplating device described above.
  • the electroplating fixture detection method includes at least steps S210 to S230, which are specifically described as follows:
  • the variation of the exhaust air pressure is counted according to the detected exhaust air pressure.
  • the variation of the exhaust air pressure is the variation of the gas pressure at the airway opening 114 covered by the sealing ring 15 .
  • the gas pressure When the sealing ring 15 is intact, the gas pressure will be greater than when it is damaged, and as the air passage 113 is evacuated, the gas pressure will gradually increase until it cannot be evacuated; when the sealing ring 15 is damaged, the damage will cause gas to continue to enter the air passage 113, and the gas pressure will be lower than when it is intact, and there will be no obvious change as the air passage 113 is evacuated.
  • Step S210 may be performed before the electroplating fixture 1 clamps the wafer 2 , or may be performed during the process of the electroplating fixture 1 clamping the wafer 2 .
  • the gas passage 113 is evacuated to obtain the change in gas pressure at the gas passage opening 114 covered by the sealing ring 15 to determine whether gas continues to enter, thereby determining whether the sealing ring 15 is damaged.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种电镀夹具、电镀装置及电镀夹具检测方法，电镀夹具包括夹持筒和密封圈，夹持筒的内壁设置有环形凸台，环形凸台用于承托晶圆；密封圈包裹环形凸台，并由环形凸台延伸至夹持筒的筒壁；夹持筒的筒壁内设有气道，气道开口设置在夹持筒被密封圈包裹的位置，通过对气道抽气检测密封圈有无破损。该电镀夹具能够可靠地电镀晶圆。

Description

电镀夹具、电镀装置及电镀夹具检测方法 技术领域
本申请涉及半导体技术领域，具体而言，涉及一种电镀夹具、电镀装置及电镀方法。
背景技术
在晶圆的电镀工艺中，目前有垂直挂镀和水平喷流式杯镀两种类型。其中，挂镀是将晶圆垂直浸入镀液中，一个镀槽可以同时进行多片电镀。杯镀则是将晶圆覆盖在一个杯状的镀槽里，电镀过程以一杯一片的方式进行。相对于挂镀，杯镀的单片式的工艺过程更加可控，是高质量电镀工艺的重要发展方向。在先进的杯镀工艺中，通常需要将晶圆边缘使用密封圈可靠地密封，以使电镀液不会接触晶圆边缘和晶圆待电镀面的背面。
但是，随着电镀作业的进行，橡胶密封圈会出现老化，在局部逐渐出现破损，特别是橡胶密封圈较小的破损通过肉眼很难察觉，导致电镀失败。
发明内容
本申请的实施例提供了一种电镀夹具、电镀装置及电镀方法，至少在一定程度上可以检测到密封件上的破损。
第一方面，本申请提供了一种电镀夹具，包括：夹持筒，所述夹持筒的内壁设置有环形凸台，所述环形凸台用于承托晶圆；密封圈，包裹所述环形凸台，并由所述环形凸台延伸至所述夹持筒的筒壁；所述夹持筒的筒壁内设有气道，所述气道的气道开口设置在所述夹持筒被所述密封圈包裹的位置，通过对所述气道抽气检测所述密封圈有无破损。
具体地，所述夹持筒被所述密封圈包裹的位置设有夹持筒开口槽，所述夹持筒开口槽通过所述气道开口连通所述气道。
具体地，所述夹持筒开口槽环绕所述夹持筒一周设置。
具体地，所述气道有多个，多个所述气道连通在所述夹持筒开口槽的不同位 置。
具体地，所述夹持筒开口槽有多个，所述气道有多个，每个所述夹持筒开口槽至少连通一个所述气道，多个所述夹持筒开口槽间隔设置。
具体地，所述密封圈由所述环形凸台延伸至夹持筒内壁，电镀夹具还包括夹具内圈，设置在夹持筒内侧，并且覆盖所述密封圈位于所述夹持筒内壁的第一边沿。
具体地，所述夹持筒内壁设有内部台阶结构，所述第一边沿位于所述内部台阶结构处，所述夹具内圈在所述内部台阶结构处覆盖所述第一边沿。
具体地，所述密封圈由所述环形凸台延伸至夹持筒外壁，所述电镀夹具还包括夹具护罩，设置在夹持筒外侧，并且覆盖所述密封圈位于所述夹持筒外壁的第二边沿。
具体地，所述夹持筒外壁设有外部台阶结构，所述密封圈的第二边沿位于所述外部台阶结构处，所述夹具护罩在所述外部台阶结构覆盖所述第二边沿。
具体地，电镀夹具还包括设有抽气装置的旋转圆板，所述旋转圆板通过夹具连接件连接所述夹持筒，所述气道还设置在所述旋转圆板和所述夹具连接件中。
第二方面，本申请提供一种电镀装置，包括：电镀槽；如上任一项所述的电镀夹具，所述电镀夹具用于使所述晶圆的待电镀面朝向所述电镀槽。
第三方面，本申请提供一种电镀夹具检测方法，应用于如上任一项所述的电镀夹具，包括：对设置在所述电镀夹具中的所述气道抽气并检测抽气流量；根据所述抽气流量，统计被所述密封圈覆盖的所述气道开口处的气体流量变化；根据所述气体流量变化，判断所述密封圈是否破损。
第四方面，本申请提供一种电镀夹具检测方法，应用于如上任一项所述的电镀夹具，包括：对设置在所述电镀夹具中的所述气道抽气并检测抽气气压；根据所述抽气气压，统计被所述密封圈覆盖的所述气道开口处的气体压力变化；根据所述气体压力变化，判断所述密封圈是否破损。
本申请的电镀夹具，由于气道开口设置在夹持筒被密封圈包裹的位置，因此，通过对气道进行抽气检测，能够检测出密封圈是否破损。
本申请的其他特性和优点将通过下面的详细描述变得显然，或部分地通过本申请的实践而习得。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并 不能限制本申请。
附图概述
本申请的特征、性能由以下的实施例及其附图进一步描述。
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本申请的实施例，并与说明书一起用于解释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1示出了本申请一实施例的电镀夹具结构示意图；
图2示出了本申请一实施例的夹持筒和夹具连接件结构示意图；
图3示出了本申请一实施例的夹持筒和夹具连接件局部结构示意图；
图4示出了本申请一实施例的夹持筒和夹具连接件局部结构示意图；
图5示出了本申请实施例的夹持筒和夹具连接件结构示意图；
图6示出了本申请一实施例的电镀夹具结构示意图；
图7示出了本申请一实施例的电镀装置结构示意图；
图8示出了本申请一实施例的电镀方法流程示意图；
图9示出了本申请一实施例的电镀方法流程示意图。
本申请的较佳实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的范例；相反，提供这些实施方式使得本申请将更加全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。
此外，所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施例中。在下面的描述中，提供许多具体细节从而给出对本申请的实施例的充分理解。然而，本领域技术人员将意识到，可以实践本申请的技术方案而没有特定细节中的一个或更多，或者可以采用其他的方法、组元、装置、步骤等。在其他情况下，不详细示出或描述公知方法、装置、实现或者操作以避免模糊本申请的各方面。
请参照图1至图4，本实施例提供了一种电镀夹具1，能够检测电镀夹具1内的密封圈15是否损坏。
如图1所示，电镀夹具1包括夹持筒11、带动夹持筒11转动的动力组件12、旋转圆板13和夹具连接件14。其中，夹持筒11为筒状，沿其轴向具有两端，在图1中所示的夹持筒11靠下的一端内壁凸设有环形凸台111。晶圆2设置在夹持筒11内，晶圆2的待电镀面边缘被环形凸台111承托。动力组件12中包括旋转驱动件，动力组件12设置在旋转圆板13中心，旋转圆板13通过夹具连接件14连接夹持筒11的另一端，动力组件12通过旋转圆板13和夹具连接件14带动夹持筒11旋转，以使晶圆2在电镀时进行转动，能够使晶圆2被均匀电镀。具体地，夹具连接件14可以为一个或多个，当夹具连接件14有多个时，多个夹具连接件14沿着旋转圆板13的圆周均匀分布，从而使旋转圆板13和夹持筒11稳定连接。举例来讲，如图2所示，夹具连接件14可以是至少两个连接杆，沿着旋转圆板13的圆周均匀分布，也可以是两个连接杆为一组，两组连接杆对称设置在旋转圆板13的两侧。每组连接杆还可以组成一个连接框，连接框与旋转圆板13的连接面积更大，连接框与夹持筒11的连接面积更大，能够增加连接强度。在该实施例中，夹具连接件14还可以为连接板、连接块或其他结构。
再次参照图1，夹持筒11为圆柱形筒，夹持筒11靠下的一端内壁筒径等于晶圆2的直径，环形凸台111内壁形成的孔直径略小于晶圆2直径，以使夹持筒11接触晶圆边缘对晶圆2定位，环形凸台111承托晶圆待电镀面的边缘，从而使电镀夹具1稳定夹持晶圆2。夹持筒11远离环形凸台111的一端筒径大于晶圆2直径，以方便晶圆2放入夹持筒11中。夹持筒内壁可以至少有一段是倾斜的，能够为晶圆2提供导向作用。环形凸台111可以与夹持筒11一体设置。在本申请实施例的其他实施方式中，环形凸台111可以通过焊接、粘接等方式连接夹持筒11。
参照图3，电镀夹具1还包括密封圈15，密封圈15包裹环形凸台111，以使环形凸台111可以通过密封圈15接触晶圆2。电镀夹具1还包括夹具内圈16，设置在夹持筒内侧，以及夹具护罩17，设置在夹持筒外侧。密封圈15由环形凸台111延伸至夹持筒内壁和夹持筒外壁，在夹持筒内壁的密封圈第一边 沿151被夹具内圈16压紧，在夹持筒外壁的密封圈第二边沿152被夹具护罩17压紧，以使密封圈15位置固定。由于密封圈15向夹持筒内壁延伸，夹持筒内壁通过密封圈15接触晶圆边缘，以使晶圆边缘密封效果更好。进一步地，夹持筒内壁设有内部台阶结构，夹持筒内壁的密封圈第一边沿151延伸至内部台阶结构，密封圈第一边沿151在内部台阶结构处被夹具内圈16压紧，以使密封圈15被更好的固定。同样地，可以在夹持筒外壁设置外部台阶结构，在夹持筒外壁的密封圈第二边沿152在外部台阶结构处被夹具护罩17压紧，以使密封圈15被更好的固定。
如图4所示，更进一步地，外部台阶结构设置有多个环形卡槽112，密封圈15为橡胶等有弹性的材料，密封圈15被压紧时会被压缩至环形卡槽112中，以使密封圈第二边沿152呈波浪状，从而更好的固定密封圈15。环形卡槽112还可以设置在内部台阶结构、夹具内圈16和/或夹具护罩17上，环形卡槽112的数量也可以为一个。
夹持筒11的筒壁中设有气道113，气道113的气道开口114设置在夹持筒11被密封圈15包裹的位置。气道113还连通抽气装置(未图示)，从而在使用抽气装置对气道113抽气时，能够根据气道113中气体流量或气压的变化，判断气道开口114位置处的密封圈15是否破损。密封圈15贴合夹持筒11设置，但密封圈15为弹性材料，密封圈15的弹性可能由于老化等原因变差，从而使密封圈15和夹持筒11之间出现微米级别的缝隙，因此，对气道113抽气不仅能判断气道开口114位置的密封圈15是否破损，还可以通过缝隙检测整个密封圈15是否破损。气道113还由夹持筒11内壁向夹具连接件14和旋转圆板13延伸，直至与动力组件12中的抽气装置相连接。夹持筒11中的气道113可以为一个或多个，相应地，夹具连接件14中的气道113也可以为一个或多个，旋转圆板13中的气道113也可以为一个或多个。在一个具体实施方式中，参照图2，若夹具连接件14为连接杆，则气道113可以设置在连接杆中。在本申请实施例的其他实施方式中，抽气装置设置在电镀夹具1外。
在本申请实施例的其他实施方式中，气道113延伸至环形凸台111内部，则气道开口114设置在环形凸台111被密封圈15包裹的位置。在本申请实施例的其他实施方式中，气道开口114有多个，多个气道开口114分布在环形凸 台111承托面的两侧。当环形凸台111承托晶圆2时，晶圆2在重力作用下使密封圈15紧贴承托面，分布在承托面两侧的气道开口114可以分别对位于承托面两侧的密封圈15进行检测，从而更好地判断密封圈15是否破损。多个气道开口114还可以环绕夹持筒11或环形凸台111一周设置，从而能从更多方向检测密封圈15是否破损。
具体地，当密封圈15无破损时，气体流量会比有破损时更小，举例来讲，可能小于3标准公升每分钟流量值(stard liter per minute，sccm)，且随着气道113抽气会逐渐减小直至流量趋近于0；当密封圈15有破损时，破损会使气体持续进入气道113，气体流量会比无破损时大，且随着气道113抽气没有明显变化，举例来讲，可能是维持在5sccm。在本申请实施例的其他实施方式中，当密封圈15无破损时，气体压力会比有破损时更大，且随着气道113抽气气压会逐渐增大直至无法抽气；当密封圈15有破损时，破损会使气体持续进入气道113，气压会比无破损时小，且随着气道113抽气没有明显变化。
在本申请实施例的又一实施方式中，如图5所示，夹持筒11被密封圈15包裹的位置设有槽口朝向密封圈15的夹持筒开口槽115，夹持筒开口槽115通过气道开口114连通气道113，也即气道开口114设置在夹持筒开口槽115内，气道113通过夹持筒开口槽115的槽口抽气，能够增加检测密封圈15的范围，同时，当槽口有部分被密封圈15或杂质堵塞时，由于夹持筒开口槽115有一定深度，夹持筒开口槽115内部仍可以流通气体，从而能起到更好的检测效果。
进一步地，如图5所示，夹持筒开口槽115为沿着夹持筒11一周设置的环形开口槽，从而能从更多方向检测密封圈15。当气道113有多个时，每个气道113与环形开口槽的不同位置连通。
在本申请实施例的一个实施方式中，如图6所示，当气道113有多个时，夹持筒开口槽115也可以为多个，每个夹持筒开口槽115至少连通一个气道113，每个气道113分别连通抽气装置，抽气装置能够分别控制各个气道113的通断，以分别通过各个夹持筒开口槽115检测密封圈15。多个夹持筒开口槽115间隔设置，以降低对夹持筒11强度的影响，多个夹持筒开口槽115沿着夹持筒11的圆周方向排布。在本申请实施例的其他实施方式中，多个夹持筒开口槽115可以沿着夹持筒11的轴向方向排布。
在本申请实施例的其他实施方式中，环形凸台111被密封圈15包裹的位置设有槽口朝向密封圈15的凸台开口槽，凸台开口槽的结构与夹持筒开口槽115类似，具体结构可参考夹持筒开口槽115设置，在此不再赘述。
再次参照图1，电镀夹具1还包括晶圆压块18，晶圆压块18设置在夹持筒11内，用于对晶圆2背离待电镀面的晶圆背面施加压力，以使晶圆边缘紧密贴合环形凸台111，达到更好的密封效果。晶圆压块18用于压紧晶圆2的端面尺寸与晶圆2尺寸相同，以使晶圆2各处受力均匀，提高电镀平整性。晶圆压块18背离晶圆2的一端边缘向远离晶圆2的方向设置凸起，凸起延伸至夹持筒11远离环形凸台111的一端并向夹持筒11远离环形凸台111的端面设置折弯结构，折弯结构卡接在夹持筒11远离环形凸台111的端面，实现对晶圆压块18限位。晶圆压块18用于压紧晶圆2的端面与环形凸台111之间的距离为一片晶圆2厚度，即晶圆压块18折弯结构的卡接面与晶圆压块18用于压紧晶圆2的端面之间的距离减去夹持筒11的高度的差值等于一片晶圆2厚度，以防止晶圆压块18过度挤压晶圆2造成晶圆2破损。
请参照图7，本实施例还提供了一种电镀装置，包括如上所述的电镀夹具1。
如图7所示，电镀装置还包括盛有电镀液的电镀槽3，当电镀夹具1夹持晶圆2边缘时，晶圆待电镀面朝向电镀槽3，以使电镀夹具1夹持晶圆2向电镀槽3内运动时，晶圆待电镀面浸没在电镀槽3中进行杯镀。
请参照图8，本实施例还提供了一种电镀夹具检测方法，由上述电镀夹具1或电镀装置执行。
电镀夹具检测方法至少包括步骤S110至S130，具体说明如下：
S110：对设置在电镀夹具1中的气道113抽气并检测抽气流量。
S120：根据抽气流量，统计被密封圈15覆盖的气道开口114处的气体流量变化。
抽气流量的变化即为被密封圈15覆盖的气道开口114处的气体流量变化。
S130：根据气体流量变化，判断密封圈15是否破损。
当密封圈15无破损时，气体流量会比有破损时更小，举例来讲，可能小于 3标准公升每分钟流量值(stard liter per minute，sccm)，且随着气道113抽气会逐渐减小直至流量趋近于0；当密封圈15有破损时，破损会使气体持续进入气道113，气体流量会比无破损时大，且随着气道113抽气没有明显变化，举例来讲，可能是维持在5sccm。
步骤S110可以在电镀夹具1夹持晶圆2前执行，也可以在电镀夹具1夹持晶圆2的过程中执行。
在该电镀方法中，通过对气道113抽气，获取被密封圈15覆盖的气道开口114处的气体流量变化，以判断是否持续有气体进入，从而能够判断密封圈15有无破损。
请参照图9，本实施例还提供了一种电镀夹具检测方法，由上述电镀夹具1或电镀装置执行。
电镀夹具检测方法至少包括步骤S210至S230，具体说明如下：
S210：对设置在电镀夹具1中的气道113抽气并检测抽气气压。
S220：根据抽气气压，统计被密封圈15覆盖的气道开口114处的气体压力变化。
根据检测到的抽气气压统计抽气气压的变化，抽气气压的变化即为被密封圈15覆盖的气道开口114处的气体压力变化。
S130：根据气体压力变化，判断密封圈15是否破损。
当密封圈15无破损时，气体压力会比有破损时更大，且随着气道113抽气气压会逐渐增大直至无法抽气；当密封圈15有破损时，破损会使气体持续进入气道113，气压会比无破损时小，且随着气道113抽气没有明显变化。
步骤S210可以在电镀夹具1夹持晶圆2前执行，也可以在电镀夹具1夹持晶圆2的过程中执行。
在该电镀方法中，通过对气道113抽气，获取被密封圈15覆盖的气道开口114处的气体压力变化，以判断是否持续有气体进入，从而能够判断密封圈15有无破损。
本领域技术人员在考虑说明书及实践这里公开的实施方式后，将容易想到本申请的其他实施方案。本申请旨在涵盖本申请的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本申请的一般性原理并包括本申请 未公开的本技术领域中的公知常识或惯用技术手段。
应当理解的是，本申请并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本申请的范围仅由所附的权利要求来限制。

Claims (13)

  1. 一种电镀夹具，其特征在于，包括：
    夹持筒，所述夹持筒的内壁设置有环形凸台，所述环形凸台用于承托晶圆；
    密封圈，包裹所述环形凸台，并由所述环形凸台延伸至所述夹持筒的筒壁；
    所述夹持筒的筒壁内设有气道，所述气道的气道开口设置在所述夹持筒被所述密封圈包裹的位置，通过对所述气道抽气检测所述密封圈有无破损。
  2. 根据权利要求1所述的电镀夹具，其特征在于，所述夹持筒被所述密封圈包裹的位置设有夹持筒开口槽，所述夹持筒开口槽通过所述气道开口连通所述气道。
  3. 根据权利要求2所述的电镀夹具，其特征在于，所述夹持筒开口槽环绕所述夹持筒一周设置。
  4. 根据权利要求3所述的电镀夹具，其特征在于，所述气道有多个，多个所述气道连通在所述夹持筒开口槽的不同位置。
  5. 根据权利要求2所述的电镀夹具，其特征在于，所述夹持筒开口槽有多个，所述气道有多个，每个所述夹持筒开口槽至少连通一个所述气道，多个所述夹持筒开口槽间隔设置。
  6. 根据权利要求1所述的电镀夹具，其特征在于，所述密封圈由所述环形凸台延伸至夹持筒内壁，电镀夹具还包括夹具内圈，所述夹具内圈设置在夹持筒内侧，并且覆盖所述密封圈位于所述夹持筒内壁的第一边沿。
  7. 根据权利要求6所述的电镀夹具，其特征在于，所述夹持筒内壁设有内部台阶结构，所述第一边沿位于所述内部台阶结构处，所述夹具内圈在所述内部台阶结构处覆盖所述第一边沿。
  8. 根据权利要求1所述的电镀夹具，其特征在于，所述密封圈由所述环形凸台延伸至夹持筒外壁，所述电镀夹具还包括夹具护罩，所述夹具护罩设置在夹持筒外侧，并且覆盖所述密封圈位于所述夹持筒外壁的第二边沿。
  9. 根据权利要求8所述的电镀夹具，其特征在于，所述夹持筒外壁设有外部台阶结构，所述密封圈的第二边沿位于所述外部台阶结构处，所述夹具护罩在所述外部台阶结构覆盖所述第二边沿。
  10. 根据权利要求1所述的电镀夹具，其特征在于，还包括设有抽气装置的旋转圆板，所述旋转圆板通过夹具连接件连接所述夹持筒，所述气道还设置在所述旋转圆板和所述夹具连接件中。
  11. 一种电镀装置，其特征在于，包括：
    电镀槽；
    如权利要求1-10中任一项所述的电镀夹具，所述电镀夹具用于使所述晶圆的待电镀面朝向所述电镀槽。
  12. 一种电镀夹具检测方法，其特征在于，应用于如权利要求1-10中任一项所述的电镀夹具，包括：
    对设置在所述电镀夹具中的所述气道抽气并检测抽气流量；
    根据所述抽气流量，统计被所述密封圈覆盖的所述气道开口处的气体流量变化；
    根据所述气体流量变化，判断所述密封圈是否破损。
  13. 一种电镀夹具检测方法，其特征在于，应用于如权利要求1-10中任一项所述的电镀夹具，包括：
    对设置在所述电镀夹具中的所述气道抽气并检测抽气气压；
    根据所述抽气气压，统计被所述密封圈覆盖的所述气道开口处的气体压力变化；
    根据所述气体压力变化，判断所述密封圈是否破损。
PCT/CN2024/122101 2023-11-28 2024-09-29 电镀夹具、电镀装置及电镀夹具检测方法 Pending WO2025112883A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202311606108.0 2023-11-28
CN202311606108.0A CN120060958A (zh) 2023-11-28 2023-11-28 电镀夹具、电镀装置及电镀夹具检测方法

Publications (1)

Publication Number Publication Date
WO2025112883A1 true WO2025112883A1 (zh) 2025-06-05

Family

ID=95806565

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2024/122101 Pending WO2025112883A1 (zh) 2023-11-28 2024-09-29 电镀夹具、电镀装置及电镀夹具检测方法

Country Status (3)

Country Link
CN (1) CN120060958A (zh)
TW (1) TW202521774A (zh)
WO (1) WO2025112883A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121006590A (zh) * 2025-10-28 2025-11-25 江苏无锡经纬天地半导体科技有限公司 晶圆夹具、半导体设备及电镀方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0959795A (ja) * 1995-08-24 1997-03-04 Nec Kansai Ltd メッキ用治具
JPH11181590A (ja) * 1997-12-17 1999-07-06 Hitachi Ltd 電解めっき方法および装置
US20210225684A1 (en) * 2020-01-19 2021-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Workpiece holder, wafer chuck, wafer holding method
CN218160335U (zh) * 2022-11-16 2022-12-27 晟盈半导体设备(江苏)有限公司 一种晶圆夹持装置
CN116065222A (zh) * 2023-03-09 2023-05-05 苏州智程半导体科技股份有限公司 一种晶圆电镀夹具移动装置
CN116130403A (zh) * 2022-07-25 2023-05-16 华海清科股份有限公司 一种应用于晶圆处理的双向气封结构和晶圆处理装置
CN219315132U (zh) * 2023-03-21 2023-07-07 盛合晶微半导体(江阴)有限公司 晶圆电镀设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0959795A (ja) * 1995-08-24 1997-03-04 Nec Kansai Ltd メッキ用治具
JPH11181590A (ja) * 1997-12-17 1999-07-06 Hitachi Ltd 電解めっき方法および装置
US20210225684A1 (en) * 2020-01-19 2021-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Workpiece holder, wafer chuck, wafer holding method
CN116130403A (zh) * 2022-07-25 2023-05-16 华海清科股份有限公司 一种应用于晶圆处理的双向气封结构和晶圆处理装置
CN218160335U (zh) * 2022-11-16 2022-12-27 晟盈半导体设备(江苏)有限公司 一种晶圆夹持装置
CN116065222A (zh) * 2023-03-09 2023-05-05 苏州智程半导体科技股份有限公司 一种晶圆电镀夹具移动装置
CN219315132U (zh) * 2023-03-21 2023-07-07 盛合晶微半导体(江阴)有限公司 晶圆电镀设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121006590A (zh) * 2025-10-28 2025-11-25 江苏无锡经纬天地半导体科技有限公司 晶圆夹具、半导体设备及电镀方法

Also Published As

Publication number Publication date
CN120060958A (zh) 2025-05-30
TW202521774A (zh) 2025-06-01

Similar Documents

Publication Publication Date Title
WO2025112883A1 (zh) 电镀夹具、电镀装置及电镀夹具检测方法
KR20190135041A (ko) 웨이퍼 홀더 및 웨이퍼 이송 장치, 시스템 및 방법
KR102340104B1 (ko) 기판 처리 장치 및 기판 처리 방법
US20090127760A1 (en) Holding device for holding workpieces and vacuum deposition apparatus using same
CN113832448B (zh) 一种半导体薄膜沉积设备及半导体镀膜方法
CN111809222A (zh) 晶圆固定装置和晶圆固定方法
US20070026772A1 (en) Apparatus for use in processing a semiconductor workpiece
CN219956824U (zh) 一种用于薄膜设备的检漏装置
CN109461672A (zh) 一种刻蚀均匀的传感器单晶硅刻蚀装置
US8343370B2 (en) Method of fabricating a PTFE seal element and a shaft seal assembly therewith
CN219677240U (zh) 一种耐用型静电吸附盘
CN212404337U (zh) 晶圆固定装置
CN108321103A (zh) 晶圆夹具及电感耦合等离子刻蚀系统
JP3657386B2 (ja) 半導体製造装置及び半導体製造方法
JP5239983B2 (ja) 縦型ウエハ処理装置
CN112095088A (zh) 一种快速切换镀膜工艺气体的方法及设备
KR100316307B1 (ko) 홈을가진클램프를구비한기판냉각장치
JPH02312223A (ja) プラズマ処理方法およびプラズマ処理装置
CN117020716B (zh) 膜片加工夹具
JP2007040769A (ja) リーク検査方法及びリーク検査装置
JPH03138615A (ja) 液晶セルの製造方法
JPH11135448A (ja) 縦型処理装置
CN222702547U (zh) 一种用于密封性检测的双层密封封堵机构
CN121646321A (zh) 晶圆吸附系统、半导体器件的工艺设备和工艺方法
CN121285271A (zh) 一种真空辅助晶圆贴片固定装置以及贴片设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24895978

Country of ref document: EP

Kind code of ref document: A1