WO2025028177A1 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

Info

Publication number
WO2025028177A1
WO2025028177A1 PCT/JP2024/024683 JP2024024683W WO2025028177A1 WO 2025028177 A1 WO2025028177 A1 WO 2025028177A1 JP 2024024683 W JP2024024683 W JP 2024024683W WO 2025028177 A1 WO2025028177 A1 WO 2025028177A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
light emitting
semiconductor light
surface electrode
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/024683
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
晃輝 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2025537791A priority Critical patent/JPWO2025028177A1/ja
Publication of WO2025028177A1 publication Critical patent/WO2025028177A1/ja
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor

Definitions

  • This disclosure relates to a semiconductor light-emitting device.
  • a known type of semiconductor light-emitting device is a semiconductor laser device that includes a semiconductor light-emitting element as a laser light source (see, for example, Patent Document 1).
  • the semiconductor laser device of Patent Document 1 includes multiple leads that are rod-shaped members. The multiple leads are used as terminals that are used when mounting the semiconductor laser device on electronic equipment, etc.
  • a semiconductor light emitting device is a semiconductor light emitting device comprising: a substrate having a substrate surface and a substrate back surface facing the opposite side to the substrate surface; a plurality of surface electrodes formed on the substrate surface; a plurality of back electrodes formed on the substrate back surface and configured to mount the semiconductor light emitting device; a semiconductor light emitting element including a first light emitting portion and a second light emitting portion; a first element surface electrode electrically connected to the first light emitting portion; a second element surface electrode electrically connected to the second light emitting portion; and an element back electrode electrically connected to both the first light emitting portion and the second light emitting portion; a first drive circuit electrically connected to the first element surface electrode and driving the first light emitting portion; and a second drive circuit electrically connected to the second element surface electrode and driving the second light emitting portion, and the element back electrode, the first drive circuit, and the second drive circuit of the semiconductor light emitting element are mounted on the plurality of surface electrodes.
  • FIG. 1 is a schematic plan view of a semiconductor light emitting device according to the first embodiment.
  • FIG. 2 is a schematic rear view of the semiconductor light emitting device of FIG.
  • FIG. 3 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line F3-F3 in FIG.
  • FIG. 4 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line F4-F4 in FIG.
  • FIG. 5 is a schematic circuit diagram of a light emitting system including the semiconductor light emitting device of the first embodiment.
  • FIG. 6 is a schematic cross-sectional view of the semiconductor light emitting device of FIG. 3 mounted on a circuit board.
  • FIG. 7 is a schematic cross-sectional view for explaining a current path flowing in a semiconductor light emitting device.
  • FIG. 8 is a schematic plan view of the semiconductor light emitting device according to the second embodiment.
  • FIG. 9 is a schematic rear view of the semiconductor light emitting device of FIG.
  • FIG. 10 is a schematic plan view of the front-side intermediate electrode of the semiconductor light-emitting device of FIG.
  • FIG. 11 is a schematic circuit diagram of a light emitting system including the semiconductor light emitting device of the second embodiment.
  • FIG. 12 is a schematic plan view of a semiconductor light emitting device according to the third embodiment.
  • FIG. 13 is a schematic rear view of the semiconductor light emitting device of FIG. 14 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line F14-F14 in FIG.
  • FIG. 15 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F15-F15 in FIG.
  • FIG. 16 is a schematic plan view of a semiconductor light emitting device according to the fourth embodiment.
  • FIG. 17 is a schematic rear view of the semiconductor light emitting device of FIG.
  • FIG. 18 is a schematic plan view showing an enlarged portion of the semiconductor light emitting device of FIG. 19 is a schematic plan view showing an enlarged view of another part of the semiconductor light emitting device of FIG.
  • FIG. 20 is a schematic circuit diagram of a light emitting system including the semiconductor light emitting device of the fifth embodiment.
  • FIG. 21 is a schematic plan view of the semiconductor light emitting device of FIG. 22 is a schematic rear view of the semiconductor light emitting device of FIG. 21.
  • FIG. 23 is a schematic plan view of a front surface side intermediate electrode of the semiconductor light emitting device of FIG.
  • FIG. 24 is a schematic plan view showing an enlarged portion of the semiconductor light emitting device of FIG. 25 is a schematic plan view showing an enlarged view of another part of the semiconductor light emitting device of FIG. 26 is a schematic plan view showing yet another enlarged portion of the semiconductor light emitting device of FIG.
  • FIG. 27 is a schematic circuit diagram of a light emitting system including the semiconductor light emitting device of the sixth embodiment.
  • FIG. 28 is a schematic plan view of the semiconductor light emitting device of FIG.
  • FIG. 31 is a schematic plan view of a rear surface side intermediate electrode of the semiconductor light emitting device of FIG.
  • FIG. 32 is a schematic plan view showing an enlarged portion of the semiconductor light emitting device of FIG. 33 is a schematic plan view showing an enlarged view of another part of the semiconductor light emitting device of FIG.
  • FIG. 34 is a schematic plan view showing yet another enlarged portion of the semiconductor light emitting device of FIG.
  • FIG. 1 shows a schematic planar structure of the semiconductor light emitting device 10.
  • FIG. 2 shows a schematic rear structure of the semiconductor light emitting device 10.
  • FIG. 3 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the line F3-F3 in FIG. 1.
  • FIG. 4 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the line F4-F4 in FIG. 3.
  • FIG. 5 shows a schematic circuit configuration of a light emitting system 800 including the semiconductor light emitting device 10.
  • FIG. 6 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 mounted on a circuit board 900.
  • FIG. 1 shows a schematic planar structure of the semiconductor light emitting device 10.
  • FIG. 2 shows a schematic rear structure of the semiconductor light emitting device 10.
  • FIG. 3 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the line F3-F3 in FIG. 1.
  • FIG. 4 shows a schematic cross-sectional structure of
  • FIG. 7 shows an explanatory diagram for explaining the flow of current flowing through the semiconductor light emitting device 10.
  • hatched lines are omitted to facilitate understanding of the drawing.
  • the term "planar view” used in the present disclosure refers to viewing the semiconductor light emitting device 10 in the Z direction of the mutually orthogonal XYZ axes shown in FIG. 1.
  • the "X direction” is an example of the "second direction”
  • the "Y direction” is an example of the "first direction”.
  • the semiconductor light emitting device 10 includes a substrate 20, a semiconductor light emitting element 30, a first drive circuit 40, and a second drive circuit 50 arranged on the substrate 20.
  • the semiconductor light emitting element 30, the first drive circuit 40, and the second drive circuit 50 are arranged on the substrate 20 at a distance from each other.
  • the substrate 20 is a component that supports the semiconductor light-emitting element 30, the first drive circuit 40, and the second drive circuit 50.
  • the substrate 20 is formed in a rectangular flat plate shape with the thickness direction being the Z direction.
  • plane view is synonymous with "viewed from the thickness direction of the substrate.”
  • the substrate 20 is formed in a rectangular shape with its longitudinal direction in the X direction and its transverse direction in the Y direction in a plan view.
  • the substrate 20 has a substrate surface 21, a substrate back surface 22 facing the opposite side to the substrate surface 21 in the Z direction, and first to fourth substrate side surfaces 23 to 26 connecting the substrate surface 21 and the substrate back surface 22.
  • the first substrate side surface 23 and the second substrate side surface 24 form both end surfaces of the substrate 20 in the X direction
  • the third substrate side surface 25 and the fourth substrate side surface 26 form both end surfaces of the substrate 20 in the Y direction.
  • the shape of the substrate 20 in a plan view can be changed as desired.
  • a multi-layer substrate is used for the substrate 20.
  • the substrate 20 is a four-layer substrate. That is, the substrate 20 includes a plurality of surface electrodes 28A, a plurality of rear electrodes 28B, a plurality of surface-side intermediate electrodes 28C, and a plurality of rear-side intermediate electrodes 28D provided on a base material 27.
  • Each of the surface electrodes 28A, each of the rear electrodes 28B, each of the surface-side intermediate electrodes 28C, and each of the rear-side intermediate electrodes 28D is formed of a material including one or more appropriately selected from the following: Ti (titanium), TiN (titanium nitride), Au (gold), Ag (silver), Cu (copper), Al (aluminum), and W (tungsten).
  • the base material 27 is formed of, for example, an insulating material.
  • the insulating material may be formed of, for example, a material containing epoxy resin.
  • the base material 27 may be formed of glass epoxy resin.
  • the insulating material may also be formed of, for example, a material containing ceramic. Examples of materials containing ceramic include aluminum nitride (AlN) and alumina (Al 2 O 3 ).
  • AlN aluminum nitride
  • Al 2 O 3 alumina
  • the substrate front surface 21, the substrate back surface 22, and the first to fourth substrate side surfaces 23 to 26 refer to the substrate front surface, substrate back surface, and first to fourth substrate side surfaces of the base material 27.
  • the base material 27 includes three substrates, namely, a front surface substrate 27A, a back surface substrate 27B, and an intermediate substrate 27C.
  • the substrate front surface 21 of the substrate 20 is constituted by the substrate surface of the front surface substrate 27A.
  • the rear surface 22 of the substrate 20 is formed by the rear surface of the rear substrate 27B.
  • the first to fourth substrate side surfaces of the substrate 20 are formed by the first to fourth substrate side surfaces of the front substrate 27A, the rear substrate 27B, and the intermediate substrate 27C.
  • the first to fourth substrate side surfaces 23 to 26 (FIG.
  • FIG. 3 shows the third substrate side surface 25 and the fourth substrate side surface 26), the ends of the front intermediate electrode 28C and the rear intermediate electrode 28D are covered by the substrates 27A, 27B, and 27C.
  • the substrates 27A, 27B, and 27C and the portions covering the ends of the front intermediate electrode 28C and the rear intermediate electrode 28D are shown by solid lines.
  • the interfaces of the substrates 27A, 27B, and 27C may not be clear.
  • a plurality of surface electrodes 28A are formed on the substrate surface 21.
  • the plurality of surface electrodes 28A includes a first surface electrode 61, a second surface electrode 62A, 62B, a third surface electrode 63A, 63B, and a fourth surface electrode 64A, 64B that are spaced apart from one another.
  • the first surface electrode 61 is formed in a substantially rectangular ring shape on the outer periphery of the substrate surface 21.
  • the first surface electrode 61 is symmetrical with respect to an imaginary center line VC that extends along the Y direction at the center of the substrate surface 21 in the X direction.
  • the first surface electrode 61 includes first to fourth wiring parts 61A to 61D that form each side of the substantially rectangular ring shape, and an opening 61E formed by the first to fourth wiring parts 61A to 61D.
  • the first wiring portion 61A is a wiring that extends along the Y direction at a position adjacent to the first substrate side surface 23 in the X direction.
  • the second wiring portion 61B is a wiring that extends along the Y direction at a position adjacent to the second substrate side surface 24 in the X direction.
  • the third wiring portion 61C is a wiring that extends along the X direction at a position adjacent to the third substrate side surface 25 in the Y direction.
  • the fourth wiring portion 61D is a wiring that extends along the X direction at a position adjacent to the fourth substrate side surface 26 in the Y direction.
  • the width dimension WA3 of the third wiring portion 61C is larger than the width dimension WA1 of the first wiring portion 61A.
  • the width dimension WA3 is larger than the width dimension WA2 of the second wiring portion 61B.
  • the width dimension WA3 is smaller than the width dimension WA4 of the fourth wiring portion 61D.
  • the width dimension WA3 of the third wiring portion 61C is a dimension in a direction (Y direction) perpendicular to the direction (X direction) in which the third wiring portion 61C extends in a plan view.
  • the width dimension WA1 of the first wiring portion 61A and the width dimension WA2 of the second wiring portion 61B are dimensions in a direction (X direction) perpendicular to the direction (Y direction) in which the first wiring portion 61A and the second wiring portion 61B extend in a plan view.
  • the width dimension WA4 of the fourth wiring portion 61D is a dimension in a direction (Y direction) perpendicular to the direction (X direction) in which the fourth wiring portion 61D extends in a plan view.
  • Enlarged regions 61F and 61G are formed between the first wiring portion 61A and the third wiring portion 61C, and between the second wiring portion 61B and the third wiring portion 61C, respectively.
  • the enlarged region 61F is a region in which the area of the first surface electrode 61 between the first wiring portion 61A and the third wiring portion 61C is enlarged.
  • the enlarged region 61G is a region in which the area of the first surface electrode 61 between the second wiring portion 61B and the third wiring portion 61C is enlarged.
  • the enlarged regions 61F and 61G are formed in a right-angled trapezoid shape.
  • the virtual lines VL1 and VL2 shown by the two-dot chain lines in FIG. 1 show parts of the first wiring portion 61A, the second wiring portion 61B, and the third wiring portion 61C when it is assumed that the enlarged regions 61F and 61G are not formed.
  • the second surface electrodes 62A, 62B, the third surface electrodes 63A, 63B, and the fourth surface electrodes 64A, 64B are arranged within the opening 61E of the first surface electrode 61 on the substrate surface 21 in a plan view.
  • the second surface electrode 62A, the third surface electrode 63A, and the fourth surface electrode 64A are arranged closer to the first substrate side surface 23 than the imaginary center line VC, and the second surface electrode 62B, the third surface electrode 63B, and the fourth surface electrode 64B are arranged closer to the second substrate side surface 24 than the imaginary center line VC.
  • the second surface electrode 62A, the third surface electrode 63A, and the fourth surface electrode 64A and the second surface electrode 62B, the third surface electrode 63B, and the fourth surface electrode 64B are in a line-symmetrical relationship with respect to the imaginary center line VC. Therefore, below, we will explain the second surface electrode 62A, the third surface electrode 63A, and the fourth surface electrode 64A, and will omit explanations of the second surface electrode 62B, the third surface electrode 63B, and the fourth surface electrode 64B.
  • the second surface electrode 62A is formed in a substantially L-shape in a plan view.
  • the second surface electrode 62A is disposed closer to the imaginary center line VC than the third surface electrode 63A and the fourth surface electrode 64A.
  • the second surface electrode 62A includes a narrow portion 62AA and a wide portion 62AB.
  • the narrow portion 62AA is a portion of the second surface electrode 62A that has a smaller dimension in the X direction.
  • the wide portion 62AB is a portion of the second surface electrode 62A that has a larger dimension in the X direction.
  • the narrow portion 62AA and the wide portion 62AB are aligned in the Y direction. In one example, the narrow portion 62AA and the wide portion 62AB are integrated.
  • the narrow portion 62AA is disposed closer to the third wiring portion 61C of the first surface electrode 61, and the wide portion 62AB is disposed closer to the fourth wiring portion 61D of the first surface electrode 61.
  • the second surface electrode 62B includes a narrow portion 62BA and a wide portion 62BB.
  • the third surface electrode 63A is formed to surround the wide portion 62AB of the second surface electrode 62A from one side in the X direction and one side in the Y direction.
  • the third surface electrode 63A includes a first opposing portion, a second opposing portion, and a connecting portion. The first opposing portion and the second opposing portion form both ends of the third surface electrode 63A in the extension direction.
  • the first opposing portion is located closer to the third wiring portion 61C than the wide portion 62AB, and faces the narrow portion 62AA in the X direction.
  • the first opposing portion is disposed in a position adjacent to the narrow portion 62AA in the X direction.
  • the second opposing portion is located closer to the first wiring portion 61A than the wide portion 62AB, and faces the fourth wiring portion 61D in the Y direction.
  • the connecting portion connects the first opposing portion and the second opposing portion.
  • the connecting portion extends diagonally toward the fourth wiring portion 61D as it approaches the first wiring portion 61A.
  • the third surface electrode 63A is composed of a wire having a constant width.
  • the fourth surface electrode 64A is formed to surround the third surface electrode 63A from one side in the X direction and one side in the Y direction.
  • the fourth surface electrode 64A includes a first opposing portion, a second opposing portion, and a connecting portion. The first opposing portion and the second opposing portion form both ends of the fourth surface electrode 64A in the extension direction.
  • the first opposing portion is located closer to the third wiring portion 61C than the first opposing portion of the third surface electrode 63A, and faces the narrow portion 62AA in the X direction.
  • the first opposing portion is arranged in a position adjacent to the narrow portion 62AA in the X direction.
  • the first opposing portion of the fourth surface electrode 64A is aligned in the Y direction with the first opposing portion of the third surface electrode 63A.
  • the second opposing portion of the fourth surface electrode 64A is located closer to the first wiring portion 61A than the second opposing portion of the third surface electrode 63A, and faces the fourth wiring portion 61D in the Y direction.
  • the connecting portion of the fourth surface electrode 64A connects the first opposing portion and the second opposing portion of the fourth surface electrode 64A.
  • This connecting portion is arranged closer to the enlarged region 61F than the connecting portion of the third surface electrode 63A.
  • the width dimension (dimension in the X direction) of the second opposing portion of the fourth surface electrode 64A is larger than the width dimension (dimension in the Y direction) of the first opposing portion of the fourth surface electrode 64A.
  • the area of the first surface electrode 61 is larger than the area of each of the second surface electrodes 62A, 62B, the third surface electrodes 63A, 63B, and the fourth surface electrodes 64A, 64B. In one example, the area of the first surface electrode 61 is larger than the sum of the areas of the second surface electrodes 62A, 62B, the third surface electrodes 63A, 63B, and the fourth surface electrodes 64A, 64B.
  • the multiple back electrodes 28B are formed on the substrate back surface 22.
  • the multiple back electrodes 28B include a first back electrode 71, second back electrodes 72A, 72B, third back electrodes 73A, 73B, and fourth back electrodes 74A, 74B that are spaced apart from one another.
  • the first back surface electrode 71 is a back surface electrode electrically connected to the first surface electrode 61 (see FIG. 1).
  • the first back surface electrode 71 is formed so as to overlap the first surface electrode 61 in a planar view.
  • the first back surface electrode 71 is formed so as to overlap at least the first wiring portion 61A and the fourth wiring portion 61D in a planar view.
  • the first back surface electrode 71 is formed in a T-shape in a planar view.
  • the first back surface electrode 71 is symmetrical with respect to the imaginary center line VC.
  • the first back surface electrode 71 includes a wide portion 71A and a narrow portion 71B. In one example, the wide portion 71A and the narrow portion 71B are integrated.
  • the wide portion 71A is disposed closer to the third substrate side surface 25 than the center in the Y direction of the substrate back surface 22.
  • the wide portion 71A is formed over substantially the entire substrate back surface 22 in the X direction.
  • the Y direction dimension WB1 of the wide portion 71A is greater than 1/3 and less than 1/2 of the Y direction dimension of the substrate back surface 22.
  • the narrow portion 71B is disposed closer to the fourth substrate side surface 26 than the wide portion 71A.
  • the narrow portion 71B is disposed in the center of the substrate back surface 22 in the X direction.
  • the tip of the narrow portion 71B is formed in a position adjacent to the fourth substrate side surface 26 in a plan view.
  • the width dimension WB2 of the narrow portion 71B is larger than the Y direction dimension WB1 of the wide portion 71A.
  • the second back electrodes 72A, 72B are distributed on both sides of the narrow portion 71B of the first back electrode 71 in the X direction.
  • the third back electrodes 73A, 73B are distributed on both sides of the narrow portion 71B of the first back electrode 71 in the X direction.
  • the fourth back electrodes 74A, 74B are distributed on both sides of the narrow portion 71B of the first back electrode 71 in the X direction.
  • the second back electrode 72A, the third back electrode 73B, and the fourth back electrode 74A are disposed closer to the first substrate side surface 23 than the narrow portion 71B, and the second back electrode 72B, the third back electrode 73B, and the fourth back electrode 74B are disposed closer to the second substrate side surface 24 than the narrow portion 71B.
  • the second back surface electrode 72A and the second back surface electrode 72B are in a line-symmetric relationship with respect to the virtual center line VC.
  • the fourth back surface electrode 74A and the fourth back surface electrode 74B are in a line-symmetric relationship with respect to the virtual center line VC. For this reason, in the following, the second back surface electrode 72A, the third back surface electrode 73A, and the fourth back surface electrode 74A will be described, and a description of the second back surface electrode 72B, the third back surface electrode 73B, and the fourth back surface electrode 74B will be omitted.
  • the second back electrode 72A is a back electrode electrically connected to the second surface electrode 62A (see FIG. 1).
  • the second back electrode 72A includes a portion that overlaps with the wide portion 62AB (see FIG. 1) of the second surface electrode 62A in a planar view.
  • the second back electrode 72A is arranged in a position adjacent to the narrow portion 71B in the X direction.
  • the second back electrode 72A extends in the Y direction. Of both ends of the second back electrode 72A in the Y direction, the end closer to the third substrate side surface 25 is arranged in a position adjacent to the wide portion 71A in the Y direction.
  • the end closer to the fourth substrate side surface 26 is formed in a position adjacent to the fourth substrate side surface 26 in the Y direction.
  • the end of the second back electrode 72A adjacent to the wide portion 71A in the Y direction includes a protrusion 72AA that protrudes toward the opposite side to the narrow portion 71B in the X direction.
  • the protrusion 72AA is formed in a triangular shape in a plan view.
  • the second back surface electrode 72B includes a protrusion 72BA, similar to the second back surface electrode 72A.
  • the third back surface electrode 73A is a back surface electrode electrically connected to the third surface electrode 63A (see FIG. 1).
  • the third back surface electrode 73A includes a portion that overlaps with the second opposing portion of the third surface electrode 63A in a planar view.
  • the third back surface electrode 73A is disposed on the opposite side of the narrow portion 71B with respect to the second back surface electrode 72A in the X direction.
  • the third back surface electrode 73A extends in the Y direction.
  • the Y direction dimension of the third back surface electrode 73A is smaller than the Y direction dimension of the second back surface electrode 72A.
  • the end closer to the fourth substrate side surface 26 is formed at a position adjacent to the fourth substrate side surface 26 in the Y direction. Therefore, the distance between the third back surface electrode 73A and the wide portion 71A in the Y direction is greater than the distance between the second back surface electrode 72A and the wide portion 71A in the Y direction.
  • the end of the second back surface electrode 72A closer to the wide portion 71A in the Y direction has a notch 73AA formed therein to avoid the protruding portion 72AA.
  • the third back surface electrode 73B has a notch 73BA formed therein to avoid the protruding portion 72BA.
  • the fourth back surface electrode 74A is a back surface electrode electrically connected to the fourth surface electrode 64A (see FIG. 1).
  • the fourth back surface electrode 74A is disposed on the opposite side of the third back surface electrode 73A from the second back surface electrode 72A in the X direction.
  • the fourth back surface electrode 74A extends in the Y direction.
  • the dimension of the fourth back surface electrode 74A in the Y direction is smaller than the dimension of the third back surface electrode 73A in the Y direction.
  • the end closer to the fourth substrate side surface 26 is formed at a position adjacent to the fourth substrate side surface 26 in the Y direction. Therefore, the distance between the fourth back surface electrode 74A and the wide portion 71A in the Y direction is larger than the distance between the third back surface electrode 73A and the wide portion 71A in the Y direction.
  • the area of the first back electrode 71 is larger than the area of each of the second back electrodes 72A, 72B, the third back electrodes 73A, 73B, and the fourth back electrodes 74A, 74B.
  • the area of the first back electrode 71 is larger than the sum of the areas of the second back electrodes 72A, 72B, the third back electrodes 73A, 73B, and the fourth back electrodes 74A, 74B.
  • the area of the first back electrode 71 is larger than twice the sum of the areas of the second back electrodes 72A, 72B, the third back electrodes 73A, 73B, and the fourth back electrodes 74A, 74B.
  • the area of the first back electrode 71 is larger than three times the sum of the areas of the second back electrodes 72A, 72B, the third back electrodes 73A, 73B, and the fourth back electrodes 74A, 74B. In one example, the area of the first back surface electrode 71 is greater than half the area of the back surface 22 of the substrate.
  • the multiple surface-side intermediate electrodes 28C are formed within the substrate 27. More specifically, the multiple surface-side intermediate electrodes 28C are sandwiched between the surface-side substrate 27A and the intermediate substrate 27C (both see FIG. 3).
  • the multiple surface-side intermediate electrodes 28C include a first intermediate electrode 81, a second intermediate electrode 82A, 82B, a third intermediate electrode 83A, 83B, and a fourth intermediate electrode 84A, 84B that are arranged at a distance from one another.
  • the first intermediate electrode 81 is an intermediate electrode electrically connected to both the first surface electrode 61 (see FIG. 1) and the first back surface electrode 71 (see FIG. 2).
  • the area of the first intermediate electrode 81 is larger than the area of each of the second intermediate electrodes 82A, 82B, the third intermediate electrodes 83A, 83B, and the fourth intermediate electrodes 84A, 84B.
  • the area of the first intermediate electrode 81 is larger than the combined area of the second intermediate electrodes 82A, 82B, the third intermediate electrodes 83A, 83B, and the fourth intermediate electrodes 84A, 84B.
  • the area of the first intermediate electrode 81 is larger than 1/2 the area of the substrate surface of the intermediate substrate 27C. In a plan view, the area of the first intermediate electrode 81 is larger than 2/3 the area of the substrate surface of the intermediate substrate 27C. In one example, the first intermediate electrode 81 is formed over substantially the entire substrate surface of the intermediate substrate 27C in a plan view.
  • the first intermediate electrode 81 includes two first openings 81AA, 81AB, two second openings 81BA, 81BB, and two third openings 81CA, 81CB.
  • the first openings 81AA, 81AB are in a line-symmetric relationship with respect to the virtual center line VC.
  • the second openings 81BA, 81BB are in a line-symmetric relationship with respect to the virtual center line VC.
  • the third openings 81CA, 81CB are in a line-symmetric relationship with respect to the virtual center line VC.
  • the first opening 81AA, the second opening 81BA, and the third opening 81CA are positioned closer to the first substrate side surface 23 than the virtual center line VC, and the first opening 81AB, the second opening 81BB, and the third opening 81CB are positioned closer to the second substrate side surface 24 than the virtual center line VC.
  • the first openings 81AA, 81AB are disposed closer to the imaginary center line VC than the second openings 81BA, 81BB and the third openings 81CA, 81CB.
  • the second opening 81BA is disposed at a position overlapping with the first opening 81AA when viewed from the X direction.
  • the second opening 81BA is connected to the end of the first opening 81AA closer to the first substrate side surface 23 in the X direction.
  • the third opening 81CA is disposed on the opposite side of the second opening 81BA from the first opening 81AA in the X direction.
  • the third opening 81CA is disposed at a distance from the first opening 81AA and the second opening 81BA.
  • the third opening 81CA is disposed at a position overlapping with the second opening 81BA when viewed from the X direction.
  • the second opening 81BB is disposed at a position overlapping with the first opening 81AB when viewed from the X direction.
  • the second opening 81BB communicates with the end of the second opening 81BA closer to the second substrate side surface 24 in the X direction.
  • the third opening 81CB is disposed on the opposite side of the second opening 81BB from the first opening 81AB in the X direction.
  • the third opening 81CB is disposed apart from the first opening 81AB and the second opening 81BB.
  • the third opening 81CB is disposed at a position overlapping with the second opening 81BB when viewed from the X direction.
  • the second intermediate electrode 82A is disposed within the first opening 81AA.
  • the second intermediate electrode 82B is disposed within the first opening 81AB.
  • the third intermediate electrode 83A is disposed within the second opening 81BA.
  • the third intermediate electrode 83B is disposed within the second opening 81BB.
  • the fourth intermediate electrode 84A is disposed within the third opening 81CA.
  • the fourth intermediate electrode 84B is disposed within the third opening 81CB.
  • the first openings 81AA, 81AB are formed in a generally right-angled trapezoid shape. Each corner of the first openings 81AA, 81AB is formed in a curved shape.
  • the second openings 81BA, 81BB are formed in an elliptical shape with the Y direction as the longitudinal direction.
  • the second openings 81BA, 81BB include a portion that protrudes toward the fourth substrate side surface 26 relative to the first openings 81AA, 81AB when viewed from the X direction.
  • the third openings 81CA, 81CB are formed in an elliptical shape with the X direction as the longitudinal direction.
  • the second intermediate electrode 82A and the second intermediate electrode 82B are in a line-symmetric relationship with respect to the virtual center line VC.
  • the third intermediate electrode 83A and the third intermediate electrode 83B are in a line-symmetric relationship with respect to the virtual center line VC.
  • the fourth intermediate electrode 84A and the fourth intermediate electrode 84B are in a line-symmetric relationship with respect to the virtual center line VC. For this reason, in the following, only the second intermediate electrode 82A, the third intermediate electrode 83A, and the fourth intermediate electrode 84A will be described, and a description of the second intermediate electrode 82B, the third intermediate electrode 83B, and the fourth intermediate electrode 84B will be omitted.
  • the second intermediate electrode 82A is formed in a substantially right-angled trapezoidal shape in a plan view.
  • the second intermediate electrode 82A is slightly smaller than the first opening 81AA.
  • the third intermediate electrode 83A is formed in an elliptical shape with the Y direction as the long side and the X direction as the short side in a plan view.
  • the third intermediate electrode 83A is slightly smaller than the second opening 81BA.
  • the fourth intermediate electrode 84A is formed in an elliptical shape with the X direction as the long side and the Y direction as the short side in a plan view.
  • the fourth intermediate electrode 84A is slightly smaller than the third opening 81CA.
  • the multiple back side intermediate electrodes 28D have the same configuration as the multiple front side intermediate electrodes 28C. For this reason, a detailed description of the multiple back side intermediate electrodes 28D will be omitted.
  • the substrate 20 includes first vias 91A, 91B, second vias 92A, 92B, third vias 93A, 93B, and fourth vias 94A, 94B.
  • the first vias 91A, 91B, second vias 92A, 92B, third vias 93A, 93B, and fourth vias 94A, 94B are arranged to penetrate each of the substrates 27A, 27B, 27C, the front-side intermediate electrode 28C, and the back-side intermediate electrode 28D in the Z direction.
  • the first vias 91A, 91B, second vias 92A, 92B, third vias 93A, 93B, and fourth vias 94A, 94B may be arranged to penetrate the front-side electrode 28A and the back-side electrode 28B in the Z direction.
  • the first vias 91A, 91B, the second vias 92A, 92B, the third vias 93A, 93B, and the fourth vias 94A, 94B are formed from a material that includes one or more appropriately selected from the following: Ti, TiN, Au, Ag, Cu, Al, and W.
  • first vias 91A and multiple first vias 91B There are multiple first vias 91A and multiple first vias 91B.
  • the first vias 91A and 91B are electrically connected to the first surface electrode 61, the first intermediate electrode 81 of the surface-side intermediate electrode 28C, the first intermediate electrode 81 of the back-side intermediate electrode 28D, and the first back-side electrode 71.
  • the first surface electrode 61, the first intermediate electrode 81 of the surface-side intermediate electrode 28C, the first intermediate electrode 81 of the back-side intermediate electrode 28D, and the first back-side electrode 71 are electrically connected to each other.
  • the multiple first vias 91A are provided in the third wiring portion 61C of the first surface electrode 61. More specifically, the multiple first vias 91A are provided in the center of the third wiring portion 61C in the X direction. Therefore, in a plan view, the multiple first vias 91A are arranged in a position of the third wiring portion 61C that overlaps with the semiconductor light emitting element 30.
  • the multiple first vias 91A are arranged at a distance from each other in the X direction and the Y direction.
  • the number of first vias 91A arranged in the X direction is greater than the number of first vias 91A arranged in the Y direction.
  • the area in which the multiple first vias 91A are formed is larger than the area of the semiconductor light emitting element 30. Therefore, some of the multiple first vias 91A are arranged outside the semiconductor light emitting element 30 in a plan view.
  • the multiple first vias 91B are provided in the fourth wiring portion 61D of the first surface electrode 61. More specifically, the multiple first vias 91B are provided in the center of the fourth wiring portion 61D in the X direction. In the example shown in FIG. 1, the multiple first vias 91B are provided near the fourth substrate side surface 26 in the fourth wiring portion 61D. In other words, the multiple first vias 91B are not provided in the end closer to the second surface electrodes 62A, 62B of both ends of the fourth wiring portion 61D in the Y direction. The multiple first vias 91B are arranged at a distance from each other in the X direction and the Y direction.
  • the arrangement and number of the multiple first vias 91B are the same as those of the multiple first vias 91A.
  • the multiple first vias 91B are provided at the same position in the X direction as the multiple first vias 91A.
  • the second vias 92A and the second vias 92B are provided in multiple numbers.
  • the number of the second vias 92A and the second vias 92B is less than the number of the first vias 91A and the first vias 91B.
  • the second vias 92A are electrically connected to the second surface electrode 62A, the second intermediate electrode 82A of the surface-side intermediate electrode 28C, the second intermediate electrode 82A of the back-side intermediate electrode 28D, and the second back-side electrode 72A.
  • the second surface electrode 62A, the second intermediate electrode 82A of the surface-side intermediate electrode 28C, the second intermediate electrode 82A of the back-side intermediate electrode 28D, and the second back-side electrode 72A are electrically connected to each other.
  • the second via 92B is electrically connected to the second surface electrode 62B, the second intermediate electrode 82B of the surface-side intermediate electrode 28C, the second intermediate electrode 82B of the back-side intermediate electrode 28D, and the second back-side electrode 72B.
  • the second surface electrode 62B, the second intermediate electrode 82B of the surface-side intermediate electrode 28C, the second intermediate electrode 82B of the back-side intermediate electrode 28D, and the second back-side electrode 72B are electrically connected to each other.
  • the multiple second vias 92A are provided in the wide portion 62AB of the second surface electrode 62A, closer to the first substrate side surface 23. As shown in FIG. 2, the multiple second vias 92A are provided in the end of the second back surface electrode 72A in the Y direction that is closer to the wide portion 71A of the first back surface electrode 71. Some of the multiple second vias 92A are provided in the protruding portion 72AA of the second back surface electrode 72A.
  • the multiple second vias 92B are provided in the wide portion 62BB of the second surface electrode 62B, closer to the second substrate side surface 24. As shown in FIG. 2, the multiple second vias 92B are provided in the end of the second back surface electrode 72B in the Y direction that is closer to the wide portion 71A of the first back surface electrode 71. Some of the multiple second vias 92B are provided in the protruding portion 72BA of the second back surface electrode 72B.
  • each of the third vias 93A and the third vias 93B is provided in multiple numbers.
  • the number of the third vias 93A and the third vias 93B is less than the number of the second vias 92A and the second vias 92B.
  • the third via 93A is electrically connected to the third surface electrode 63A, the third intermediate electrode 83A of the surface-side intermediate electrode 28C, the third intermediate electrode 83A of the back-side intermediate electrode 28D, and the third back-side electrode 73A.
  • the third surface electrode 63A, the third intermediate electrode 83A of the surface-side intermediate electrode 28C, the third intermediate electrode 83A of the back-side intermediate electrode 28D, and the third back-side electrode 73A are electrically connected to each other.
  • the third via 93B is electrically connected to the third surface electrode 63B, the third intermediate electrode 83B of the surface-side intermediate electrode 28C, the third intermediate electrode 83B of the back-side intermediate electrode 28D, and the third back-side electrode 73B.
  • the third surface electrode 63B, the third intermediate electrode 83B of the surface-side intermediate electrode 28C, the third intermediate electrode 83B of the back-side intermediate electrode 28D, and the third back-side electrode 73B are electrically connected to each other.
  • the multiple third vias 93A are provided in the second opposing portion of the third surface electrode 63A.
  • the multiple third vias 93A are arranged at the same position in the X direction and spaced apart from each other in the Y direction.
  • the multiple third vias 93A are provided at the end of the third back surface electrode 73A in the Y direction that is closer to the wide portion 71A of the first back surface electrode 71.
  • the multiple third vias 93A are provided in a position adjacent to the cutout portion 73AA of the third back surface electrode 73A in the X direction.
  • the third vias 93B are provided in the second opposing portion of the third surface electrode 63B.
  • the third vias 93B are arranged at the same position in the X direction and spaced apart from each other in the Y direction.
  • the third vias 93B are provided at the end of the third back surface electrode 73B in the Y direction that is closer to the wide portion 71A of the first back surface electrode 71.
  • the third vias 93B are provided in a position adjacent to the cutout portion 73BA of the third back surface electrode 73B in the X direction.
  • the fourth vias 94A and the fourth vias 94B are each provided in multiple numbers.
  • the number of the fourth vias 94A and the fourth vias 94B is less than the number of the second vias 92A and the second vias 92B.
  • the number of the fourth vias 94A and the fourth vias 94B is the same as the number of the third vias 93A and the third vias 93B.
  • the fourth via 94A is electrically connected to the fourth surface electrode 64A, the fourth intermediate electrode 84A of the surface-side intermediate electrode 28C, the fourth intermediate electrode 84A of the back-side intermediate electrode 28D, and the fourth back-side electrode 74A.
  • the fourth surface electrode 64A, the fourth intermediate electrode 84A of the surface-side intermediate electrode 28C, the fourth intermediate electrode 84A of the back-side intermediate electrode 28D, and the fourth back-side electrode 74A are electrically connected to each other.
  • the fourth via 94B is electrically connected to the fourth surface electrode 64B, the fourth intermediate electrode 84B of the surface-side intermediate electrode 28C, the fourth intermediate electrode 84B of the back-side intermediate electrode 28D, and the fourth back-side electrode 74B.
  • the fourth surface electrode 64B, the fourth intermediate electrode 84B of the surface-side intermediate electrode 28C, the fourth intermediate electrode 84B of the back-side intermediate electrode 28D, and the fourth back-side electrode 74B are electrically connected to each other.
  • the multiple fourth vias 94A are provided in the second opposing portion of the fourth surface electrode 64A.
  • the multiple fourth vias 94A are arranged at the same position in the Y direction and spaced apart from each other in the X direction.
  • the multiple fourth vias 94A are provided at one of both ends of the fourth back surface electrode 74A in the Y direction that is closer to the wide portion 71A of the first back surface electrode 71.
  • the multiple fourth vias 94B are provided in the second opposing portion of the fourth surface electrode 64B.
  • the multiple fourth vias 94B are arranged at the same position in the Y direction and spaced apart from each other in the X direction.
  • the multiple fourth vias 94B are provided at one of both ends of the fourth back surface electrode 74B in the Y direction that is closer to the wide portion 71A of the first back surface electrode 71.
  • the substrate front surface 21 of the substrate 20 may be covered with a front surface resist 29A.
  • the substrate back surface 22 of the substrate 20 may be covered with a back surface resist 29B.
  • the front surface resist 29A and the back surface resist 29B are formed of an insulating material.
  • the insulating material forming the front surface resist 29A and the back surface resist 29B may be, for example, an insulating resin such as an epoxy resin or a polyimide resin.
  • the front surface resist 29A and the back surface resist 29B may contain a filler such as silica or alumina.
  • the surface resist 29A includes openings that expose a portion of the multiple surface electrodes 28A.
  • the semiconductor light emitting element 30, components of the first drive circuit 40, and components of the second drive circuit 50 are mounted on the surface electrodes 28A exposed by the openings in the surface resist 29A.
  • the openings in the surface resist 29A are indicated by two-dot chain lines.
  • the back resist 29B includes openings that expose a portion of the multiple back electrodes 28B.
  • the semiconductor light emitting device 10 is mounted on the circuit board 900 shown in FIG. 6 by the back electrodes 28B exposed by the openings in the back resist 29B. Therefore, the semiconductor light emitting device 10 can be said to be a surface mount device that is mounted on the surface of the circuit board 900. Note that in FIG. 2, the openings in the back resist 29B are indicated by two-dot chain lines.
  • the semiconductor light emitting element 30, the first drive circuit 40, and the second drive circuit 50 are mounted on the multiple surface electrodes 28A. Detailed configurations and mounting modes of each of the semiconductor light emitting element 30, the first drive circuit 40, and the second drive circuit 50 will be described below.
  • the semiconductor light emitting element 30 is mounted on the third wiring portion 61C of the first surface electrode 61. More specifically, as shown in Fig. 3, the semiconductor light emitting element 30 is joined to the third wiring portion 61C by a conductive bonding material SD.
  • the conductive bonding material SD may be a solder paste, a silver paste, a gold paste, or a copper paste.
  • the semiconductor light emitting element 30 is disposed at the center of the third wiring portion 61C in the X direction.
  • the semiconductor light emitting element 30 is disposed biased toward the third substrate side surface 25 with respect to the center of the third wiring portion 61C in the Y direction.
  • the semiconductor light-emitting element 30 is formed in a rectangular flat plate shape with the thickness direction being in the Z direction.
  • the shape of the semiconductor light-emitting element 30 is a rectangle (rectangular shape) with the X direction being the long side direction and the Y direction being the short side direction.
  • the dimension of the semiconductor light-emitting element 30 in the Y direction is approximately 1/2 the width dimension WA3 of the third wiring portion 61C.
  • the semiconductor light-emitting element 30 is a laser diode that outputs laser light in a predetermined wavelength band, and functions as a light source for the semiconductor light-emitting device 10.
  • the semiconductor light-emitting element 30 is, for example, an edge-emitting laser element (EEL).
  • the semiconductor light-emitting element 30 includes a plurality of (eight in the first embodiment) light-emitting sections 33. Each light-emitting section 33 is configured to emit laser light in a predetermined wavelength band.
  • the semiconductor light-emitting element 30 is a multi-array type edge-emitting laser element. This laser light may be visible light, or may be laser light with a longer wavelength than visible light such as infrared light.
  • the plurality of light-emitting sections 33 are arranged side by side in the X direction.
  • the semiconductor light emitting device 30 includes a front surface 31 and a back surface 32 facing opposite directions in the Z direction.
  • the element surface 31 includes a plurality of element surface electrodes 34 (eight in the first embodiment).
  • the number of element surface electrodes 34 is set according to the number of light-emitting sections 33. That is, the plurality of element surface electrodes 34 are provided individually for the plurality of light-emitting sections 33.
  • the plurality of element surface electrodes 34 are electrically connected individually to the plurality of light-emitting sections 33.
  • the plurality of element surface electrodes 34 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. In one example, the plurality of element surface electrodes 34 constitute anode electrodes of the plurality of light-emitting sections 33.
  • an element back surface electrode 35 is formed on the element back surface 32.
  • the element back surface electrode 35 is formed over the entire surface of the element back surface 32.
  • the element back surface electrode 35 is electrically connected to the multiple light-emitting sections 33.
  • the element back surface electrode 35 serves as a common electrode for the multiple light-emitting sections 33.
  • the element back surface electrode 35 constitutes a common cathode electrode for the multiple light-emitting sections 33.
  • the first drive circuit 40 is a circuit that drives the four light-emitting units 33 that are closer to the first substrate side surface 23 out of the eight light-emitting units 33.
  • the four light-emitting units 33 driven by the first drive circuit 40 are referred to as the "first light-emitting units 33A.”
  • the second drive circuit 50 is a circuit that drives the four light-emitting units 33 that are closer to the second substrate side surface 24 out of the eight light-emitting units 33.
  • the four light-emitting units 33 driven by the second drive circuit 50 are referred to as the "second light-emitting units 33B.”
  • the element surface electrode 34 provided for the first light-emitting portion 33A will be referred to as the "first element surface electrode 34A”
  • the element surface electrode 34 provided for the second light-emitting portion 33B will be referred to as the "second element surface electrode 34B.”
  • the first element surface electrode 34A is composed of four element surface electrodes 34
  • the second element surface electrode 34B is composed of another four element surface electrodes 34.
  • the first element surface electrode 34A constitutes the "first anode electrode”
  • the second element surface electrode 34B constitutes the "second anode electrode.”
  • the first drive circuit 40 includes a first switching element 41 that controls the drive of the first light-emitting unit 33A, and a first capacitor 42 that supplies current to the first light-emitting unit 33A.
  • the first switching element 41 and the first capacitor 42 are arranged at a distance from the semiconductor light-emitting element 30.
  • the first switching element 41 is mounted on the second surface electrode 62A. More specifically, as shown in FIG. 3, the first switching element 41 is joined to the second surface electrode 62A by a conductive bonding material SD.
  • the first switching element 41 is mainly mounted on the narrow portion 62AA of the second surface electrode 62A. A part of the first switching element 41 protrudes into the wide portion 62AB of the second surface electrode 62A. In other words, the first switching element 41 is disposed on the second surface electrode 62A near the semiconductor light-emitting element 30. More specifically, the first switching element 41 is disposed on the second surface electrode 62A near the first light-emitting portion 33A of the semiconductor light-emitting element 30. When viewed from the Y direction, the first switching element 41 is disposed in a position overlapping with the first light-emitting portion 33A.
  • the first switching element 41 for example, a vertical transistor is used.
  • a transistor such as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), or a bipolar transistor is used.
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • IGBT Insulated Gate Bipolar Transistor
  • a bipolar transistor is used as the first switching element 41.
  • a MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • IGBT Insulated Gate Bipolar Transistor
  • the first switching element 41 is formed in a rectangular plate shape with the thickness direction being in the Z direction.
  • the first switching element 41 is formed in a square shape in a plan view.
  • the shape of the first switching element 41 in a plan view can be changed as desired.
  • the first switching element 41 includes a second element front surface 41A and a second element back surface 41B that face opposite each other in the Z direction.
  • the second element front surface 41A faces the same side as the substrate front surface 21, and the second element back surface 41B faces the same side as the substrate back surface 22.
  • the second element back surface 41B faces the second surface electrode 62A.
  • the second element front surface 41A is an example of the "element front surface of the first switching element 41”
  • the second element back surface 41B is an example of the "element back surface of the first switching element 41".
  • a source electrode 41S and a gate electrode 41G are formed on the second element surface 41A.
  • the source electrode 41S is formed over most of the second element surface 41A.
  • the gate electrode 41G is formed at an end of the second element surface 41A closer to the first substrate side surface 23 in the X direction and at the center of the second element surface 41A in the Y direction.
  • the gate electrode 41G is accommodated in a recess formed in the source electrode 41S.
  • the gate electrode 41G faces the first opposing portion of the third surface electrode 63A in the X direction.
  • the source electrode 41S includes a portion facing the first opposing portion of the fourth surface electrode 64A in the X direction.
  • a drain electrode 41D is formed on the second element back surface 41B.
  • the drain electrode 41D is formed over the entire second element back surface 41B.
  • the drain electrode 41D is joined to the second surface electrode 62A by a conductive bonding material SD.
  • the drain electrode 41D of the first switching element 41 is mounted on the second surface electrode 62A.
  • the source electrode 41S of the first switching element 41 and the multiple first element surface electrodes 34A are individually and electrically connected by multiple wires W1.
  • the source electrode 41S of the first switching element 41 and the fourth surface electrode 64A are electrically connected by a wire W2.
  • the gate electrode 41G of the first switching element 41 and the third surface electrode 63A are electrically connected by a wire W3.
  • the wires W1 to W3 are bonding wires formed by a wire bonding device and are formed of a conductor containing, for example, Au, Al, Cu, etc.
  • the semiconductor light-emitting element 30 and the first capacitor 42 are arranged spaced apart from each other in the Y direction.
  • the first capacitor 42 is arranged on the opposite side of the first switching element 41 from the semiconductor light-emitting element 30 in the Y direction.
  • the first switching element 41 is arranged between the semiconductor light-emitting element 30 and the first capacitor 42 in the Y direction.
  • a plurality of first capacitors 42 (six in the first embodiment) are provided.
  • the plurality of first capacitors 42 are arranged at a distance from one another in the X direction.
  • Each first capacitor 42 is arranged to straddle in the Y direction between the second surface electrode 62A and the fourth wiring portion 61D of the first surface electrode 61.
  • Each first capacitor 42 is mounted on the second surface electrode 62A and the fourth wiring portion 61D. More specifically, each first capacitor 42 is individually joined to the second surface electrode 62A and the fourth wiring portion 61D by a conductive bonding material SD.
  • Each first capacitor 42 includes a first electrode 42A and a second electrode 42B. Each first capacitor 42 is arranged such that the first electrode 42A and the second electrode 42B are at the same position in the X direction and spaced apart in the Y direction.
  • the first electrode 42A is joined to the second surface electrode 62A by a conductive bonding material SD. This electrically connects the first electrode 42A to the second surface electrode 62A.
  • the second electrode 42B is joined to the fourth wiring portion 61D by a conductive bonding material SD. This electrically connects the second electrode 42B to the fourth wiring portion 61D (first surface electrode 61).
  • the first electrode 42A of each first capacitor 42 is disposed on the wide portion 62AB of the second surface electrode 62A.
  • the first electrode 42A is disposed on the end of the wide portion 62AB closer to the fourth wiring portion 61D in the Y direction.
  • the multiple first capacitors 42 aligned in the X direction are disposed across the entire wide portion 62AB in the X direction. In other words, the dimension of the wide portion 62AB in the X direction is set so that the multiple first capacitors 42 aligned in the X direction can be disposed.
  • the second electrode 42B of each first capacitor 42 is disposed at one of the ends of the fourth wiring portion 61D in the Y direction that is closer to the second surface electrode 62A. In other words, the second electrode 42B of each first capacitor 42 is disposed closer to the second surface electrode 62A than the first vias 91B in the Y direction. Some of the first capacitors 42 are disposed closer to the first substrate side surface 23 than the first switching element 41 when viewed from the Y direction.
  • the second drive circuit 50 includes a second switching element 51 that controls the drive of the second light-emitting unit 33B, and a second capacitor 52 that supplies a current to the second light-emitting unit 33B.
  • the second switching element 51 is mounted on the narrow portion 62BA of the second surface electrode 62B.
  • the arrangement and mounting of the second switching element 51 on the second surface electrode 62B are the same as the arrangement and mounting of the first switching element 41 on the second surface electrode 62A. Therefore, in a plan view, the distance D1 between the semiconductor light emitting element 30 and the first switching element 41 in the Y direction is equal to the distance D2 between the semiconductor light emitting element 30 and the second switching element 51 in the Y direction.
  • the difference between the distance D1 and the distance D2 is, for example, within 10% of the distance D1, it can be said that the distance D1 is equal to the distance D2.
  • the second switching element 51 includes a second element front surface 51A and a second element back surface (not shown) facing opposite sides in the Z direction.
  • a source electrode 51S and a gate electrode 51G are formed on the second element front surface 51A.
  • a drain electrode 51D (see FIG. 5) is formed on the second element back surface.
  • the drain electrode 51D is mounted on the second surface electrode 62B.
  • the second switching element 51 has the same configuration as the first switching element 41. For this reason, detailed description of each component of the second switching element 51 will be omitted.
  • the second element front surface 51A is an example of the "front surface of the second switching element 41”
  • the second element back surface is an example of the "back surface of the second switching element 41".
  • the source electrode 51S of the second switching element 51 and the multiple second element surface electrodes 34B are individually and electrically connected by multiple wires W1.
  • the source electrode 51S of the second switching element 51 and the third surface electrode 63B are electrically connected by a wire W2.
  • the gate electrode 51G and the second surface electrode 62B are electrically connected by a wire W3.
  • the source electrode 41S of the first switching element 41 includes a portion facing the first light-emitting portion 33A in the Y direction.
  • the wires W1 individually connected to the four first element surface electrodes 34A are connected to the end of the source electrode 41S of the first switching element 41 that is closer to the first light-emitting portion 33A in the Y direction.
  • the source electrode 51S of the second switching element 51 includes a portion facing the second light-emitting portion 33B in the Y direction.
  • the wires W1 individually connected to the four second element surface electrodes 34B are connected to the end of the source electrode 51S of the second switching element 51 that is closer to the second light-emitting portion 33B in the Y direction.
  • the four wires W1 individually connected to the four first element surface electrodes 34A are equal in length. In one example, the four wires W1 individually connected to the four second element surface electrodes 34B are equal in length. Note that the number of wires W1 connected to each first element surface electrode 34A can be changed as desired. In one example, four wires W1 may be connected to each first element surface electrode 34A. In this case, 16 wires W1 are connected to the first light-emitting portion 33A, and 16 wires W1 are connected to the second light-emitting portion 33B.
  • the distance D1 between the semiconductor light-emitting element 30 and the first switching element 41 in the Y direction is equal to the distance D2 between the semiconductor light-emitting element 30 and the second switching element 51 in the Y direction, so the total length of the four wires W1 individually connected to the four first element surface electrodes 34A in a planar view and the total length of the four wires W1 individually connected to the four second element surface electrodes 34B can be adjusted to be equal to each other.
  • the semiconductor light-emitting element 30 and the second capacitor 52 are arranged spaced apart from each other in the Y direction.
  • the second capacitor 52 is arranged on the opposite side of the second switching element 51 from the semiconductor light-emitting element 30 in the Y direction.
  • the second switching element 51 is arranged between the semiconductor light-emitting element 30 and the second capacitor 52 in the Y direction.
  • a plurality of second capacitors 52 (six in the first embodiment) are provided.
  • the plurality of second capacitors 52 are arranged at a distance from each other in the X direction.
  • Each second capacitor 52 is arranged to straddle the second surface electrode 62B and the fourth wiring portion 61D of the first surface electrode 61 in the Y direction.
  • Each second capacitor 52 is mounted on the second surface electrode 62B and the fourth wiring portion 61D.
  • each second capacitor 52 includes a first electrode 52A and a second electrode 52B.
  • the first electrode 52A is joined to the second surface electrode 62B by a conductive bonding material SD.
  • the first electrode 52A is electrically connected to the second surface electrode 62B.
  • the second electrode 52B is joined to the fourth wiring portion 61D by a conductive bonding material SD. As a result, the second electrode 52B is electrically connected to the fourth wiring portion 61D (first surface electrode 61).
  • the arrangement of the second capacitors 52 is similar to the arrangement of the first capacitors 42, so a detailed description thereof will be omitted.
  • the semiconductor light emitting device 10 further includes a first protection diode 101 and a second protection diode 102 .
  • the first protection diode 101 is a diode that protects the first light emitting portion 33A of the semiconductor light emitting element 30.
  • the first protection diode 101 is disposed closer to the first substrate side surface 23 than the semiconductor light emitting element 30, the first switching element 41, and the plurality of first capacitors 42 in the X direction.
  • the first protection diode 101 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the first switching element 41 in the Y direction.
  • the first protection diode 101 is disposed at the same position as the first capacitor 42 in the Y direction.
  • the first protection diode 101 is disposed so as to straddle the Y direction between the fourth surface electrode 64A and the fourth wiring portion 61D of the first surface electrode 61.
  • the first protection diode 101 is mounted on the fourth surface electrode 64A and the first surface electrode 61. More specifically, the first protection diode 101 is individually bonded to the fourth surface electrode 64A and the first surface electrode 61 by the conductive bonding material SD.
  • the first protection diode 101 is connected in inverse parallel to the first light emitting portion 33A. More specifically, the first protection diode 101 includes a first anode electrode 101A and a first cathode electrode 101B. The first protection diode 101 is arranged such that the first anode electrode 101A and the first cathode electrode 101B are at the same position in the X direction and are spaced apart from each other in the Y direction. The first anode electrode 101A is bonded to the first surface electrode 61 by a conductive bonding material SD (not shown). The first anode electrode 101A is disposed in the fourth wiring portion 61D of the first surface electrode 61.
  • the first cathode electrode 101B is bonded to the fourth surface electrode 64A by a conductive bonding material SD (not shown).
  • the first cathode electrode 101B is disposed in the second opposing portion of the fourth surface electrode 64A.
  • the first cathode electrode 101B is electrically connected to the multiple first element surface electrodes 34A corresponding to the first light emitting portion 33A of the semiconductor light emitting element 30 via the wire W2, the source electrode 41S of the first switching element 41, and the wire W1.
  • the second protection diode 102 is a diode that protects the second light emitting portion 33B of the semiconductor light emitting element 30.
  • the second protection diode 102 is disposed closer to the second substrate side surface 24 in the X direction than the semiconductor light emitting element 30, the second switching element 51, and the second capacitors 52.
  • the second protection diode 102 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the second switching element 51 in the Y direction.
  • the second protection diode 102 is disposed in the same position as the second capacitor 52 in the Y direction.
  • the second protection diode 102 is disposed so as to straddle the Y direction between the fourth surface electrode 64B and the fourth wiring portion 61D of the first surface electrode 61.
  • the second protection diode 102 is mounted on the fourth surface electrode 64B and the first surface electrode 61.
  • the mounting manner of the second protection diode 102 is the same as that of the first protection diode 101.
  • the second protection diode 102 is connected in inverse parallel to the second light emitting portion 33B. More specifically, the second protection diode 102 includes a second anode electrode 102A and a second cathode electrode 102B.
  • the second anode electrode 102A is bonded to the fourth wiring portion 61D of the first surface electrode 61 by a conductive bonding material SD.
  • the second anode electrode 102A and the element back surface electrode 35 of the semiconductor light emitting element 30 are electrically connected via the first surface electrode 61.
  • the second cathode electrode 102B is bonded to the second opposing portion of the fourth surface electrode 64B by a conductive bonding material SD.
  • the second cathode electrode 102B is electrically connected to a plurality of second element surface electrodes 34B corresponding to the second light emitting portion 33B of the semiconductor light emitting element 30 via the wire W2, the source electrode 51S of the second switching element 51, and the wire W1.
  • a light-emitting system 800 including a semiconductor light-emitting device 10 includes a DC power supply 801, a capacitor 802 connected in parallel with the DC power supply 801, a current limiting resistor 803, reverse current prevention diodes 804A and 804B, a gate driver IC 805, a pulse generator 806, and a control power supply 807.
  • the first terminal of the current limiting resistor 803 is electrically connected to the positive electrode of the DC power supply 801.
  • the anodes of the reverse current prevention diodes 804A and 804B are electrically connected to the second terminal of the current limiting resistor 803.
  • the cathode of the reverse current prevention diode 804A is electrically connected to the second back surface electrode 72A, and the cathode of the reverse current prevention diode 804B is electrically connected to the second back surface electrode 72B.
  • the gate driver IC 805 is electrically connected to the gate electrode 41G of the first switching element 41 and the gate electrode 51G of the second switching element 51 individually. In other words, the gate driver IC 805 can control the first switching element 41 and the second switching element 51 individually. In the first embodiment, an insulated gate driver is used as the gate driver IC 805. The gate driver IC 805 is electrically connected to the third back electrodes 73A and 73B individually.
  • the pulse generator 806 and the control power supply 807 are electrically connected to the gate driver IC 805.
  • the pulse generator 806 is configured to output a pulse signal for controlling the first switching element 41 and the second switching element 51 to the gate driver IC 805.
  • the control power supply 807 is a power supply for operating the gate driver IC 805.
  • the control power supply 807 is configured to apply an operating voltage to the gate driver IC 805.
  • the negative electrode of the DC power supply 801, the capacitor 802, the pulse generator 806, and the negative electrode of the control power supply 807 are each electrically connected to the first back surface electrode 71.
  • the negative electrode of the DC power supply 801, the capacitor 802, the pulse generator 806, and the negative electrode of the control power supply 807 are each connected to ground. Therefore, the first back surface electrode 71 is connected to ground.
  • the cathode of the reverse current prevention diode 804A is electrically connected to both the drain electrode 41D of the first switching element 41 and the first electrode 42A of the first capacitor 42 via the second back electrode 72A.
  • the cathode of the reverse current prevention diode 804B is electrically connected to both the drain electrode 51D of the second switching element 51 and the first electrode 52A of the second capacitor 52 via the second back electrode 72B.
  • the source electrode 41S of the first switching element 41 is electrically connected to the first element surface electrode 34A (first anode electrode) corresponding to the first light emitting portion 33A of the semiconductor light emitting element 30 and the first cathode electrode 101B of the first protection diode 101.
  • the second electrode 42B of the first capacitor 42, the element back surface electrode 35 (cathode) corresponding to the first light emitting portion 33A of the semiconductor light emitting element 30, and the first anode electrode 101A of the first protection diode 101 are each electrically connected to the first back surface electrode 71 via the first surface electrode 61.
  • the source electrode 51S of the second switching element 51 is electrically connected to the second element surface electrode 34B (second anode electrode) corresponding to the second light emitting portion 33B of the semiconductor light emitting element 30 and the second cathode electrode 102B of the second protection diode 102.
  • the second electrode 52B of the second capacitor 52, the element back surface electrode 35 (cathode) corresponding to the second light emitting portion 33B of the semiconductor light emitting element 30, and the second anode electrode 102A of the second protection diode 102 are each electrically connected to the first back surface electrode 71 via the first surface electrode 61.
  • the first surface electrode 61 constitutes a ground wiring.
  • the first back surface electrode 71 electrically connected to the first surface electrode 61 constitutes a ground terminal.
  • the semiconductor light-emitting device 10 when the first switching element 41 is in the off state, the first capacitor 42 is charged by the DC power supply 801. Then, when the first switching element 41 is changed from the off state to the on state, a current flows from the first capacitor 42 through the first switching element 41 to the first light-emitting portion 33A of the semiconductor light-emitting element 30. As a result, pulsed laser light is emitted from the first light-emitting portion 33A. Also, when the second switching element 51 is in the off state, the second capacitor 52 is charged by the DC power supply 801.
  • the driving of the first light-emitting unit 33A is controlled by the first drive circuit 40 including the first switching element 41 and the first capacitor 42
  • the driving of the second light-emitting unit 33B is controlled by the second drive circuit 50 including the second switching element 51 and the second capacitor 52.
  • the first light-emitting unit 33A and the second light-emitting unit 33B are individually controlled by the first drive circuit 40 and the second drive circuit 50.
  • the first light-emitting unit 33A and the second light-emitting unit 33B are driven sequentially by the first drive circuit 40 and the second drive circuit 50.
  • the pulsed emission of the first light-emitting unit 33A and the second light-emitting unit 33B can be adjusted so that the pulse interval of the semiconductor light-emitting element 30 is shorter, for example, compared to a semiconductor light-emitting device having one light-emitting unit. Therefore, the number of pulses per unit time can be increased.
  • first light-emitting unit 33A and the second light-emitting unit 33B alternately emitting light, heat generation of the semiconductor light-emitting element 30 can be suppressed, compared to a semiconductor light-emitting device having one light-emitting unit.
  • each of the first light-emitting section 33A and the second light-emitting section 33B includes multiple light-emitting sections 33 (four in the first embodiment), which increases the average output power of the laser light compared to a semiconductor light-emitting device that includes one light-emitting section.
  • the semiconductor light emitting device 10 of the first embodiment employs a semiconductor light emitting element 30 including a plurality of (eight in the first embodiment) light emitting portions 33. As the output of the semiconductor light emitting element 30 increases, the amount of heat generated by the semiconductor light emitting element 30 increases. For this reason, the semiconductor light emitting device 10 requires a structure for dissipating heat from the semiconductor light emitting element 30.
  • the semiconductor light emitting element 30 is mounted on the first surface electrode 61 formed on the substrate surface 21.
  • a plurality of back electrodes 28B configured to mount the semiconductor light emitting device 10 are formed on the substrate back surface 22. For this reason, for example, as shown in FIG. 6, when the semiconductor light emitting device 10 is mounted on a circuit board 900, each back electrode 28B is joined to the wiring 901 of the circuit board 900 by a conductive bonding material SDA.
  • the conductive bonding material SDA any one of solder paste, copper paste, gold paste, and silver paste is used.
  • the first back electrode 71 formed over most of the back surface 22 of the substrate is joined to the wiring 901 of the circuit board 900 by the conductive bonding material SDA. Therefore, the heat of the semiconductor light emitting element 30 moves to the wiring 901 via the conductive bonding material SD joined to the element back electrode 35, the first surface electrode 61, the multiple first vias 91A, the first back electrode 71, and the conductive bonding material SDA.
  • the bonding area of the first back electrode 71, the conductive bonding material SDA, and the wiring 901 is larger, so that the heat of the semiconductor light emitting element 30 is more likely to move to the circuit board 900.
  • the semiconductor light-emitting device 10 may also be used in a laser system such as LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging), which is an example of three-dimensional distance measurement.
  • the semiconductor light-emitting device 10 may also be used in a laser system for two-dimensional distance measurement.
  • the semiconductor light emitting device 10 includes a first drive circuit 40 and a second drive circuit 50 that drive the first light emitting portion 33A and the second light emitting portion 33B respectively. That is, the semiconductor light emitting device 10 has the first drive circuit 40 and the second drive circuit 50 built in. As shown in FIG. 7, a current flows in the order of the first electrode 42A of the first capacitor 42, the second surface electrode 62A, the drain electrode 41D of the first switching element 41, the source electrode 41S, the wire W1, the first element surface electrode 34A, the element back surface electrode 35, the first surface electrode 61, the first intermediate electrode 81 of the surface side intermediate electrode 28C, and the second electrode 42B of the first capacitor 42.
  • a loop-shaped first current path is formed by the first light emitting portion 33A and the first drive circuit 40.
  • a loop-shaped second conductive path similar to the first current path is also formed by the second light emitting portion 33B and the second drive circuit 50. Therefore, compared to a configuration in which the drive circuit is provided outside the semiconductor light emitting device 10, the length of the first loop-shaped current path formed by the first light emitting unit 33A and the first drive circuit 40 and the length of the second loop-shaped current path formed by the second light emitting unit 33B and the second drive circuit 50 are each shorter. This makes it possible to reduce the inductance caused by the length of the first current path and the second current path.
  • the length of the first current path and the length of the second current path are both short, it is possible to reduce the variation in inductance caused by the variation in the length of the first current path and the second current path. Therefore, it is possible to shorten the pulse width of the laser light emitted by the first light emitting unit 33A and the pulse width of the laser light emitted by the second light emitting unit 33B, and to reduce the variation in the pulse width of the laser light emitted by the first light emitting unit 33A and the pulse width of the laser light emitted by the second light emitting unit 33B.
  • the pulse width of the laser light emitted by the first light emitter 33A and the pulse width of the laser light emitted by the second light emitter 33B are each 4 ns or less. In another example, the absolute value of the variation between the pulse width of the laser light emitted by the first light emitter 33A and the pulse width of the laser light emitted by the second light emitter 33B is 10% or less.
  • a semiconductor light emitting device 10 comprises a substrate 20 having a substrate surface 21 and a substrate back surface 22 facing the opposite side to the substrate surface 21, a plurality of surface electrodes 28A formed on the substrate surface 21, a plurality of back surface electrodes 28B formed on the substrate back surface 22 and configured to mount the semiconductor light emitting device 10, a semiconductor light emitting element 30 including a first light emitting portion 33A and a second light emitting portion 33B, a first element surface electrode 34A electrically connected to the first light emitting portion 33A, a second element surface electrode 34B electrically connected to the second light emitting portion, and an element back surface electrode 35 electrically connected to both the first light emitting portion 33A and the second light emitting portion 33B, a first drive circuit 40 electrically connected to the first element surface electrode 34A and driving the first light emitting portion 33A, and a second drive circuit 50 electrically connected to the second element surface electrode 34B and driving the second
  • the semiconductor light-emitting element 30 is mounted on the front electrode 28A, and the back electrode 28B is formed on the back surface 22 of the substrate, so that heat from the semiconductor light-emitting element 30 is easily transferred to the outside of the semiconductor light-emitting device 10 via the front electrode 28A and the back electrode 28B. Therefore, it is possible to prevent the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the semiconductor light-emitting device 10 includes the first drive circuit 40 and the second drive circuit 50
  • the first current path between the semiconductor light-emitting element 30 and the first drive circuit 40 and the second current path between the semiconductor light-emitting element 30 and the second drive circuit 50 are each shorter than in a configuration in which the first drive circuit 40 and the second drive circuit 50 are provided outside the semiconductor light-emitting device 10. Therefore, the inductance caused by the length of these current paths can be reduced, and the variation in inductance of the first current path and the second current path can be reduced.
  • the pulse width of the laser light emitted by the first light-emitting unit 33A and the pulse width of the laser light emitted by the second light-emitting unit 33B can be shortened, and the variation between the pulse width of the laser light emitted by the first light-emitting unit 33A and the pulse width of the laser light emitted by the second light-emitting unit 33B can be reduced.
  • the first drive circuit 40 includes a first switching element 41 that controls the drive of the first light-emitting unit 33A, and a first capacitor 42 that supplies current to the first light-emitting unit 33A.
  • the second drive circuit 50 includes a second switching element 51 that controls the drive of the second light-emitting unit 33B, and a second capacitor 52 that supplies current to the second light-emitting unit 33B.
  • a loop-shaped first current path formed by the first light-emitting portion 33A, the first switching element 41, and the first capacitor 42 of the semiconductor light-emitting element 30 can be formed in the semiconductor light-emitting device 10.
  • the length of the first current path is shorter than when both the first switching element 41 and the first capacitor 42 are provided outside the semiconductor light-emitting device 10, so that the inductance caused by the length of the first current path can be reduced.
  • a loop-shaped second current path formed by the second light-emitting portion 33B, the second switching element 51, and the second capacitor 52 of the semiconductor light-emitting element 30 can be formed in the semiconductor light-emitting device 10.
  • the length of the second current path is shorter than when both the second switching element 51 and the second capacitor 52 are provided outside the semiconductor light-emitting device 10, so that the inductance caused by the length of the second current path can be reduced.
  • the variation in the lengths of the first current path and the second current path can be reduced. This reduces the variation in inductance between the first and second current paths.
  • the semiconductor light-emitting element 30 and the first capacitor 42 are spaced apart from each other in the Y direction.
  • the first switching element 41 is located between the semiconductor light-emitting element 30 and the first capacitor 42 in the Y direction.
  • the semiconductor light-emitting element 30 and the second capacitor 52 are spaced apart from each other in the Y direction.
  • the second switching element 51 is located between the semiconductor light-emitting element 30 and the second capacitor 52 in the Y direction.
  • the loop-shaped first current path formed by the first light-emitting portion 33A of the semiconductor light-emitting element 30, the first switching element 41, and the first capacitor 42 can be made shorter, compared to a configuration in which the first switching element 41 is arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the first capacitor 42 in the Y direction.
  • the loop-shaped second current path formed by the second light-emitting portion 33B of the semiconductor light-emitting element 30, the second switching element 51, and the second capacitor 52 can be made shorter, compared to a configuration in which the second switching element 51 is arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the second capacitor 52 in the Y direction.
  • the distance D1 between the semiconductor light-emitting element 30 and the first switching element 41 in the Y direction is equal to the distance D2 between the semiconductor light-emitting element 30 and the second switching element 51 in the Y direction.
  • the length of the current path between the semiconductor light-emitting element 30 and the first switching element 41 is equal to the length of the current path between the semiconductor light-emitting element 30 and the second switching element 51. This reduces the variation in the length of the loop-shaped first current path formed by the first light-emitting portion 33A of the semiconductor light-emitting element 30, the first switching element 41, and the first capacitor 42, and the length of the loop-shaped second current path formed by the second light-emitting portion 33B of the semiconductor light-emitting element 30, the second switching element 51, and the second capacitor 52.
  • a plurality of first capacitors 42 and a plurality of second capacitors 52 are provided.
  • the plurality of first capacitors 42 are connected in parallel to each other.
  • the plurality of second capacitors 52 are connected in parallel to each other.
  • the multiple first capacitors 42 are connected in parallel with each other, so that the total inductance of the multiple first capacitors 42 can be reduced below the inductance of each of the first capacitors 42.
  • the multiple second capacitors 52 are connected in parallel with each other, so that the total inductance of the multiple second capacitors 52 can be reduced below the inductance of each of the second capacitors 52.
  • the first capacitors 42 are arranged at intervals in the X direction.
  • the second capacitors 52 are arranged at intervals in the X direction.
  • the arrangement direction (X direction) of the multiple first capacitors 42 is orthogonal to the arrangement direction (Y direction) of the semiconductor light emitting element 30, the first switching element 41, and the first capacitor 42 in a plan view. Therefore, the length of the loop-shaped first current path formed by the first light emitting unit 33A, the first switching element 41, and the first capacitor 42 of the semiconductor light emitting element 30 can be shortened.
  • the arrangement direction (X direction) of the multiple second capacitors 52 is orthogonal to the arrangement direction (Y direction) of the semiconductor light emitting element 30, the second switching element 51, and the second capacitor 52 in a plan view. Therefore, the length of the loop-shaped second current path formed by the second light emitting unit 33B, the second switching element 51, and the second capacitor 52 of the semiconductor light emitting element 30 can be shortened.
  • (1-7) Further includes a first protection diode 101 connected in anti-parallel to the first light-emitting portion 33A, and a second protection diode 102 connected in anti-parallel to the second light-emitting portion 33B.
  • the first protection diode 101 and the second protection diode 102 can suppress the application of an excessive reverse bias to the first light-emitting portion 33A and the second light-emitting portion 33B due to the resonant current, thereby increasing the peak optical output of the semiconductor light-emitting element 30.
  • the first protection diode 101 is disposed on the opposite side of the first switching element 41 from the semiconductor light-emitting element 30 in the Y direction.
  • the second protection diode 102 is disposed on the opposite side of the second switching element 51 from the semiconductor light-emitting element 30 in the Y direction.
  • the first protection diode 101 is disposed spaced apart from the first capacitor 42 in the X direction.
  • the second protection diode 102 is disposed spaced apart from the second capacitor 52 in the X direction.
  • the length of the loop-shaped first current path formed by the semiconductor light-emitting element 30, the first switching element 41, and the first capacitor 42 can be shortened, compared to a configuration in which the first protection diode 101 is disposed between the semiconductor light-emitting element 30 and the first switching element 41, or between the first switching element 41 and the first capacitor 42.
  • the length of the loop-shaped second current path formed by the semiconductor light-emitting element 30, the second switching element 51, and the second capacitor 52 can be shortened, compared to a configuration in which the second protection diode 102 is disposed between the semiconductor light-emitting element 30 and the second switching element 51, or between the second switching element 51 and the second capacitor 52.
  • the area of the first surface electrode 61 is larger than the area of each of the second surface electrodes 62A, 62B, the third surface electrodes 63A, 63B, and the fourth surface electrodes 64A, 64B.
  • This configuration makes it easier for heat from the semiconductor light-emitting element 30 mounted on the first surface electrode 61 to move to the first surface electrode 61. Therefore, it is possible to prevent the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the area of the first surface electrode 61 is greater than the sum of the areas of the second surface electrodes 62A, 62B, the third surface electrodes 63A, 63B, and the fourth surface electrodes 64A, 64B.
  • This configuration makes it easier for heat from the semiconductor light-emitting element 30 mounted on the first surface electrode 61 to move to the first surface electrode 61. This further prevents the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the area of the first back surface electrode 71 is larger than the area of each of the second back surface electrodes 72A, 72B, the third back surface electrodes 73A, 73B, and the fourth back surface electrodes 74A, 74B.
  • the heat capacity of the first back electrode 71 is increased, so that heat from the semiconductor light-emitting element 30 is more likely to transfer to the first back electrode 71.
  • the bonding area between the first back electrode 71 and the circuit board 900 is increased, so that heat from the semiconductor light-emitting element 30 is more likely to transfer to the circuit board 900 via the first back electrode 71. Therefore, it is possible to prevent the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the area of the first back electrode 71 is greater than the sum of the areas of the second back electrodes 72A, 72B, the third back electrodes 73A, 73B, and the fourth back electrodes 74A, 74B.
  • the heat capacity of the first back electrode 71 is increased, so that heat from the semiconductor light-emitting element 30 is more likely to move to the first back electrode 71.
  • the bonding area between the first back electrode 71 and the circuit board 900 is increased, so that heat from the semiconductor light-emitting element 30 is more likely to move to the circuit board 900 via the first back electrode 71. This further prevents the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the area of the first intermediate electrode 81 is larger than the area of each of the second intermediate electrodes 82A, 82B, the third intermediate electrodes 83A, 83B, and the fourth intermediate electrodes 84A, 84B.
  • the heat capacity of the first intermediate electrode 81 is increased, so that heat from the semiconductor light-emitting element 30 can be easily transferred to the first intermediate electrode 81. Therefore, it is possible to prevent the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the area of the first intermediate electrode 81 is greater than the combined area of the second intermediate electrodes 82A, 82B, the third intermediate electrodes 83A, 83B, and the fourth intermediate electrodes 84A, 84B.
  • the heat capacity of the first intermediate electrode 81 is increased, so that heat from the semiconductor light-emitting element 30 can be transferred more easily to the first intermediate electrode 81. This further prevents the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the element back surface electrode 35 of the semiconductor light emitting element 30 is electrically connected to the first surface electrode 61.
  • the drain electrode 41D of the first switching element 41 is electrically connected to the second surface electrode 62A.
  • the source electrode 41S of the first switching element 41 is electrically connected to the first element surface electrode 34A.
  • the first electrode 42A of the first capacitor 42 is electrically connected to the second surface electrode 62A.
  • the second electrode 42B of the first capacitor 42 is electrically connected to the first surface electrode 61.
  • the drain electrode 51D of the second switching element 51 is electrically connected to the second surface electrode 62B.
  • the source electrode 51S of the second switching element 51 is electrically connected to the second element surface electrode 34B.
  • the first electrode 52A of the second capacitor 52 is electrically connected to the second surface electrode 62B.
  • the second electrode 52B of the second capacitor 52 is electrically connected to the first surface electrode 61.
  • the first intermediate electrode 81 is electrically connected to the first surface electrode 61.
  • a part of the loop of the first current path in which a current flows in the order of the first electrode 42A of the first capacitor 42, the drain electrode 41D and source electrode 41S of the first switching element 41, the first element surface electrode 34A and element back electrode 35 of the semiconductor light emitting element 30, and the second electrode 42B of the first capacitor 42, is formed by the first intermediate electrode 81. Therefore, the area of the loop of the first current path can be reduced, and the inductance of the first current path can be reduced.
  • a part of the loop of the second current path in which a current flows in the order of the first electrode 52A of the second capacitor 52, the drain electrode 51D and source electrode 51S of the second switching element 51, the second element surface electrode 34B and element back electrode 35 of the semiconductor light emitting element 30, and the second electrode 52B of the second capacitor 52, is formed by the first intermediate electrode 81. Therefore, the area of the loop of the second current path can be reduced, and the inductance of the second current path can be reduced.
  • the multiple first vias 91A are arranged at positions overlapping the semiconductor light emitting element 30 in a plan view. According to this configuration, heat from the semiconductor light emitting element 30 is easily transferred to the first intermediate electrode 81 and the first back surface electrode 71. Therefore, the temperature of the semiconductor light emitting element 30 can be prevented from becoming excessively high.
  • the region in which the multiple first vias 91B are formed is disposed at a position overlapping the region in which the multiple first vias 91A are formed when viewed from the Y direction.
  • the path that flows through the first intermediate electrode 81 is a path along the Y direction. Therefore, the area of the loop of the first current path can be reduced, so that the inductance of the first current path can be reduced.
  • the path that flows through the first intermediate electrode 81 is a path along the Y direction. Therefore, the area of the loop of the second current path can be reduced, so that the inductance of the second current path can be reduced.
  • the second surface electrode 62A includes a narrow portion 62AA and a wide portion 62AB.
  • the first switching element 41 is mounted on the narrow portion 62AA.
  • Both the third surface electrode 63A and the fourth surface electrode 64A include a portion located adjacent to the narrow portion 62AA of the second surface electrode 62A in the X direction.
  • the second surface electrode 62B includes a narrow portion 62BA and a wide portion 62BB.
  • the second switching element 51 is mounted on the narrow portion 62BA.
  • Both the third surface electrode 63B and the fourth surface electrode 64B include a portion located adjacent to the narrow portion 62BA of the second surface electrode 62B in the X direction.
  • This configuration makes it possible to shorten the length of the wire W2 connecting the source electrode 41S and the fourth surface electrode 64A of the first switching element 41, and the wire W3 connecting the gate electrode 41G and the third surface electrode 63A of the first switching element 41.
  • the first switching element 41 is arranged at a position overlapping the first light-emitting portion 33A of the semiconductor light-emitting element 30 when viewed from the Y direction.
  • the second switching element 51 is arranged at a position overlapping the second light-emitting portion 33B of the semiconductor light-emitting element 30 when viewed from the Y direction.
  • the distance between the first switching element 41 and the semiconductor light-emitting element 30 can be shortened compared to a configuration in which the first switching element 41 is disposed at a position shifted in the X direction relative to the semiconductor light-emitting element 30. Therefore, when the source electrode 41S of the first switching element 41 and the first element surface electrode 34A of the semiconductor light-emitting element 30 are connected by a wire W1, the length of the wire W1 can be shortened. Compared to a configuration in which the second switching element 51 is disposed at a position shifted in the X direction relative to the semiconductor light-emitting element 30, the distance between the second switching element 51 and the semiconductor light-emitting element 30 can be shortened. Therefore, when the source electrode 51S of the second switching element 51 and the second element surface electrode 34B of the semiconductor light-emitting element 30 are connected by a wire W1, the length of the wire W1 can be shortened.
  • the first switching element 41 and the second switching element 51 are vertical transistors having the same configuration. According to this configuration, the semiconductor light emitting device 10 uses one type of switching element, and therefore the manufacturing costs of the semiconductor light emitting device 10 can be reduced compared to a case in which two types of switching elements are used.
  • a semiconductor light emitting device 10 according to a second embodiment will be described with reference to Figures 8 to 11.
  • the semiconductor light emitting device 10 according to the second embodiment differs from the semiconductor light emitting device 10 according to the first embodiment in the number of light emitting parts that are individually controlled.
  • differences from the first embodiment will be described in detail, and components common to the first embodiment will be denoted by the same reference numerals, and their description may be omitted.
  • FIG. 8 shows a schematic planar structure of the semiconductor light-emitting device 10 of the second embodiment.
  • FIG. 9 shows a schematic back surface structure of the semiconductor light-emitting device 10 of FIG. 8.
  • FIG. 10 shows a schematic planar structure of the front-side intermediate electrode 28C of the semiconductor light-emitting device 10 of FIG. 8.
  • FIG. 11 shows a schematic circuit configuration of a light-emitting system 800 including the semiconductor light-emitting device 10 of the second embodiment.
  • the semiconductor light emitting element 30 of the second embodiment includes first to fourth light emitting portions 33A to 33D, each including two light emitting portions 33 out of the eight light emitting portions 33, and first to fourth element surface electrodes 34A to 34D provided corresponding to the first to fourth light emitting portions 33A to 33D.
  • the first element surface electrode 34A is provided on the first light emitting portion 33A
  • the second element surface electrode 34B is provided on the second light emitting portion 33B
  • the third element surface electrode 34C is provided on the third light emitting portion 33C
  • the fourth element surface electrode 34D is provided on the fourth light emitting portion 33D.
  • the number of each of the first to fourth element surface electrodes 34A to 34D is set according to the number of the first to fourth light emitting portions 33A to 33D.
  • the number of each of the first to fourth light-emitting portions 33A to 33D is two, and therefore the number of each of the first to fourth element surface electrodes 34A to 34D is two.
  • the first element surface electrode 34A is an example of a "first anode electrode”
  • the second element surface electrode 34B is an example of a "second anode electrode”
  • the third element surface electrode 34C is an example of a "third anode electrode”
  • the fourth element surface electrode 34D is an example of a "fourth anode electrode.”
  • the semiconductor light emitting device 10 includes a configuration for individually controlling the driving of the first to fourth light emitting units 33A to 33D. More specifically, the semiconductor light emitting device 10 includes a first driving circuit 40 for driving the first light emitting unit 33A, a second driving circuit 50 for driving the second light emitting unit 33B, a third driving circuit 110 for driving the third light emitting unit 33C, and a fourth driving circuit 120 for driving the fourth light emitting unit 33D.
  • the first driving circuit 40 is electrically connected to the first element surface electrode 34A of the first light emitting unit 33A.
  • the second driving circuit 50 is electrically connected to the second element surface electrode 34B of the second light emitting unit 33B.
  • the third driving circuit 110 is electrically connected to the third element surface electrode 34C of the third light emitting unit 33C.
  • the fourth driving circuit 120 is electrically connected to the fourth element surface electrode 34D of the fourth light emitting unit 33D.
  • the first drive circuit 40 includes a first switching element 41 and a first capacitor 42, as in the first embodiment.
  • the second drive circuit 50 includes a second switching element 51 and a second capacitor 52, as in the first embodiment.
  • the third drive circuit 110 includes a third switching element 111 that controls the drive of the third light-emitting unit 33C, and a third capacitor 112 that supplies current to the third light-emitting unit 33C.
  • the third switching element 111 and the third capacitor 112 are arranged at a distance from the semiconductor light-emitting element 30.
  • the fourth drive circuit 120 includes a fourth switching element 121 that controls the drive of the fourth light-emitting unit 33D, and a fourth capacitor 122 that supplies current to the fourth light-emitting unit 33D.
  • the fourth switching element 121 and the fourth capacitor 122 are arranged at a distance from the semiconductor light-emitting element 30.
  • the substrate 20 includes first surface electrodes 131A, 131B, second surface electrodes 132A to 132D, third surface electrodes 133A to 133D, and fourth surface electrodes 134A to 134D as surface electrodes 28A formed on the substrate surface 21.
  • the first surface electrodes 131A, 131B, second surface electrodes 132A to 132D, third surface electrodes 133A to 133D, and fourth surface electrodes 134A to 134D are arranged spaced apart from one another.
  • the first surface electrode 131A is a surface electrode on which the semiconductor light emitting element 30 is mounted.
  • the first surface electrode 131A is disposed near the third substrate side surface 25 of the substrate surface 21 and at the center of the substrate surface 21 in the X direction in a plan view.
  • the first surface electrode 131A is formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the first surface electrode 131A has an axisymmetric shape with the virtual center line VC as the center.
  • the first surface electrode 131B is a surface electrode that constitutes a ground wiring that is electrically connected to a ground terminal.
  • the first surface electrode 131B is formed in a substantially U-shape on the outer periphery of the substrate surface 21.
  • the first surface electrode 131B includes a first wiring portion 131BA formed along the first substrate side surface 23, a second wiring portion 131BB formed along the second substrate side surface 24, and a third wiring portion 131BC formed along the fourth substrate side surface 26.
  • the first wiring portion 131BA, the second wiring portion 131BB, and the third wiring portion 131BC are integrated.
  • the first surface electrode 131B is symmetrical about the virtual center line VC.
  • the first surface electrode 131B is formed to surround the first surface electrode 131A, the second surface electrodes 132A to 132D, the third surface electrodes 133A to 133D, and the fourth surface electrodes 134A to 134D.
  • the area of the first surface electrode 131B is larger than the area of each of the first surface electrode 131A, the second surface electrodes 132A to 132D, the third surface electrodes 133A to 133D, and the fourth surface electrodes 134A to 134D.
  • the second surface electrode 132A, the third surface electrode 133A, the fourth surface electrode 134A, and the first surface electrode 131B are electrodes that electrically connect the first drive circuit 40.
  • the second surface electrode 132B, the third surface electrode 133B, the fourth surface electrode 134B, and the first surface electrode 131B are electrodes that electrically connect the second drive circuit 50.
  • the second surface electrode 132C, the third surface electrode 133C, the fourth surface electrode 134C, and the first surface electrode 131B are electrodes that electrically connect the third drive circuit 110.
  • the second surface electrode 132D, the third surface electrode 133D, the fourth surface electrode 134D, and the first surface electrode 131B are electrodes that electrically connect the fourth drive circuit 120.
  • the second surface electrodes 132A and 132B are arranged adjacent to each other on both sides of the imaginary center line VC in the X direction.
  • the second surface electrodes 132A and 132B are formed in a substantially L-shape in a plan view.
  • the second surface electrodes 132A and 132B are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the second surface electrodes 132A and 132B are located between the first surface electrode 131A and the third wiring portion 131BC of the first surface electrode 131B in the Y direction. Therefore, the second surface electrodes 132A and 132B are arranged at a position overlapping the first surface electrode 131A when viewed from the Y direction.
  • the second surface electrodes 132A, 132B include a narrow portion, a wide portion, and a connecting portion.
  • the narrow and wide portions of the second surface electrodes 132A, 132B are arranged at a distance in the Y direction.
  • the connecting portion connects the narrow and wide portions between them in the Y direction.
  • the wide portion constitutes the end of the second surface electrodes 132A, 132B in the Y direction that is closer to the third wiring portion 131BC.
  • the narrow portion includes the end of the second surface electrodes 132A, 132B in the Y direction that is closer to the first surface electrode 131A.
  • the X direction dimension of the narrow portion is approximately half the X direction dimension of the wide portion.
  • the connecting portion is a portion whose X direction dimension gradually increases from the narrow portion toward the wide portion.
  • the second surface electrode 132C and the second surface electrode 132D are disposed on both sides of the first surface electrode 131A in the X direction.
  • the second surface electrode 132C is disposed closer to the first substrate side surface 23 than the first surface electrode 131A, and the second surface electrode 132D is disposed closer to the second substrate side surface 24 than the first surface electrode 131A.
  • the second surface electrodes 132C and 132D are in a line-symmetrical relationship with respect to the imaginary center line VC.
  • the size and shape of the second surface electrode 132C are the same as those of the second surface electrode 132B.
  • the second surface electrode 132C has a shape obtained by rotating the second surface electrode 132B by 90 degrees counterclockwise. Therefore, the narrow and wide portions of the second surface electrode 132C are arranged at a distance in the X direction.
  • the narrow portion of the second surface electrode 132C is disposed near the first surface electrode 131A in the X direction.
  • the wide portion of the second surface electrode 132C is disposed near the first wiring portion 131BA in the X direction.
  • the connecting portion of the second surface electrode 132C connects the narrow portion and the wide portion between them in the X direction.
  • the size and shape of the second surface electrode 132D are the same as those of the second surface electrode 132A.
  • the second surface electrode 132D has a shape obtained by rotating the second surface electrode 132A 90 degrees clockwise. Therefore, the narrow and wide portions of the second surface electrode 132D are arranged at a distance in the X direction.
  • the narrow portion of the second surface electrode 132D is disposed near the first surface electrode 131A in the X direction.
  • the wide portion of the second surface electrode 132D is disposed near the second wiring portion 131BB in the X direction.
  • the connecting portion of the second surface electrode 132D connects the narrow portion and the wide portion between them in the X direction.
  • the third surface electrode 133A is disposed closer to the first substrate side surface 23 than the narrow portion of the second surface electrode 132A in the X direction.
  • the third surface electrode 133A is disposed between the connecting portion of the first surface electrode 131A and the second surface electrode 132A in the Y direction.
  • the third surface electrode 133B is disposed closer to the second substrate side surface 24 than the narrow portion of the second surface electrode 132B in the X direction.
  • the third surface electrode 133B is disposed between the connecting portion of the first surface electrode 131A and the second surface electrode 132B in the Y direction.
  • the third surface electrodes 133A and 133B are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the third surface electrode 133C is disposed closer to the fourth substrate side surface 26 than the narrow portion of the second surface electrode 132C in the Y direction.
  • the third surface electrode 133C is disposed between the connecting portion of the first surface electrode 131A and the second surface electrode 132C in the X direction.
  • the third surface electrode 133C is disposed closer to the fourth substrate side surface 26 than the first surface electrode 131A in the Y direction.
  • the size and shape of the third surface electrode 133C are the same as those of the third surface electrode 133B.
  • the third surface electrode 133C has a shape obtained by rotating the third surface electrode 133B by 90 degrees counterclockwise.
  • the third surface electrode 133D is disposed closer to the fourth substrate side surface 26 than the narrow portion of the second surface electrode 132D in the Y direction.
  • the third surface electrode 133D is disposed between the connecting portion of the first surface electrode 131A and the second surface electrode 132D in the X direction.
  • the third surface electrode 133D is disposed closer to the fourth substrate side surface 26 than the first surface electrode 131A in the Y direction.
  • the size and shape of the third surface electrode 133D are the same as those of the third surface electrode 133A.
  • the third surface electrode 133D has a shape obtained by rotating the third surface electrode 133A 90 degrees clockwise.
  • the fourth surface electrode 134A is disposed closer to the first substrate side surface 23 than the second surface electrode 132A in the X direction.
  • the fourth surface electrode 134A is disposed between the first surface electrode 131A and the third wiring portion 131BC in the Y direction.
  • the fourth surface electrode 134A includes a first opposing portion that faces the narrow portion of the second surface electrode 132A in the X direction, and a second opposing portion that faces the third wiring portion 131BC in the Y direction.
  • the fourth surface electrode 134A further includes a first connecting portion connected to the first opposing portion, and a second connecting portion connected to the second opposing portion.
  • the first opposing portion is disposed between the first surface electrode 131A and the third surface electrode 133A in the Y direction.
  • the third surface electrode 133A is disposed between the first opposing portion and the connecting portion of the second surface electrode 132A in the Y direction.
  • the first connecting portion and the second connecting portion are connected to each other.
  • the first connecting portion extends obliquely toward the first substrate side surface 23 and the fourth substrate side surface 26 as it approaches the second connecting portion.
  • the second connecting portion is a portion whose dimension in the X direction gradually increases as it approaches the second opposing portion.
  • the fourth surface electrode 134B is disposed closer to the second substrate side surface 24 than the second surface electrode 132B in the X direction.
  • the fourth surface electrode 134B is disposed between the first surface electrode 131A and the third wiring portion 131BC in the Y direction.
  • the fourth surface electrodes 134A and 134B are in a line-symmetric relationship with respect to the imaginary center line VC. Therefore, the first opposing portion of the fourth surface electrode 134B is disposed between the first surface electrode 131A and the third surface electrode 133B in the Y direction.
  • the third surface electrode 133B is disposed between the first opposing portion and the connecting portion of the second surface electrode 132B in the Y direction.
  • the fourth surface electrode 134C is disposed adjacent to the fourth surface electrode 134A in the X and Y directions.
  • the fourth surface electrode 134C is disposed between the second surface electrode 132C and the third wiring portion 131BC in the Y direction.
  • the fourth surface electrode 134C is disposed between the first surface electrode 131A and the first wiring portion 131BA in the X direction.
  • the size and shape of the fourth surface electrode 134C are the same as those of the fourth surface electrode 134B.
  • the fourth surface electrode 134C has a shape obtained by rotating the fourth surface electrode 134B by 90° counterclockwise. Therefore, the first opposing portion of the fourth surface electrode 134C faces the narrow portion of the second surface electrode 132C in the Y direction.
  • the second opposing portion of the fourth surface electrode 134C faces the first wiring portion 131BA in the X direction.
  • the fourth surface electrode 134D is disposed adjacent to the fourth surface electrode 134B in the X and Y directions.
  • the fourth surface electrode 134D is disposed between the second surface electrode 132D and the third wiring portion 131BC in the Y direction.
  • the fourth surface electrode 134D is disposed between the first surface electrode 131A and the second wiring portion 131BB in the X direction.
  • the size and shape of the fourth surface electrode 134D are the same as those of the fourth surface electrode 134A.
  • the fourth surface electrode 134D has a shape obtained by rotating the fourth surface electrode 134A by 90 degrees clockwise. Therefore, the first opposing portion of the fourth surface electrode 134D faces the narrow portion of the second surface electrode 132D in the Y direction.
  • the second opposing portion of the fourth surface electrode 134D faces the second wiring portion 131BB in the X direction.
  • the back surface electrode 28B includes a first back surface electrode 141, second back surface electrodes 142A-142D, third back surface electrodes 143A-143D, and fourth back surface electrodes 144A-144D.
  • the first back surface electrode 141, second back surface electrodes 142A-142D, third back surface electrodes 143A-143D, and fourth back surface electrodes 144A-144D are arranged at a distance from one another.
  • the first back electrode 141 is formed in a substantially T-shape in plan view.
  • the first back electrode 141 includes a first wide portion 141A, a second wide portion 141B, and a narrow portion 141C.
  • the first wide portion 141A, the second wide portion 141B, and the narrow portion 141C are integrated.
  • the first back electrode 141 is symmetrical with respect to the imaginary center line VC.
  • the first wide portion 141A and the second wide portion 141B are disposed closer to the third substrate side surface 25 than the center in the Y direction of the substrate back surface 22.
  • the first wide portion 141A is disposed closer to the third substrate side surface 25 than the second wide portion 141B.
  • the first wide portion 141A is formed over substantially the entire substrate back surface 22 in the X direction.
  • the dimension in the X direction of the second wide portion 141B is smaller than the dimension in the X direction of the first wide portion 141A.
  • the dimension in the Y direction of the second wide portion 141B is equal to the dimension in the Y direction of the first wide portion 141A.
  • the narrow portion 141C extends in the Y direction at the center in the X direction of the substrate back surface 22.
  • the tip of the narrow portion 141C is disposed in a position adjacent to the fourth substrate side surface 26 in the Y direction in a plan view.
  • the area of the first back surface electrode 141 is larger than the area of each of the second back surface electrodes 142A-142D, the third back surface electrodes 143A-143D, and the fourth back surface electrodes 144A-144D. In one example, the area of the first back surface electrode 141 is greater than or equal to the sum of the areas of the second back surface electrodes 142A-142D, the third back surface electrodes 143A-143D, and the fourth back surface electrodes 144A-144D.
  • the first back surface electrode 141, the second back surface electrode 142A, the third back surface electrode 143A, and the fourth back surface electrode 144A are electrodes electrically connected to the first drive circuit 40 (see FIG. 8).
  • the first back surface electrode 141, the second back surface electrode 142B, the third back surface electrode 143B, and the fourth back surface electrode 144B are electrodes electrically connected to the second drive circuit 50 (see FIG. 8).
  • the first back surface electrode 141, the second back surface electrode 142C, the third back surface electrode 143C, and the fourth back surface electrode 144C are electrodes electrically connected to the third drive circuit 110 (see FIG. 8).
  • the first back surface electrode 141, the second back surface electrode 142D, the third back surface electrode 143D, and the fourth back surface electrode 144D are electrodes electrically connected to the fourth drive circuit 120 (see FIG. 8).
  • the second back surface electrode 142A and the second back surface electrode 142B are distributed and arranged on both sides of the narrow width portion 141C of the first back surface electrode 141 in the X direction.
  • the third back surface electrode 143A and the third back surface electrode 143B are distributed and arranged on both sides of the narrow width portion 141C of the first back surface electrode 141 in the X direction.
  • the fourth back surface electrode 144A and the fourth back surface electrode 144B are distributed and arranged on both sides of the narrow width portion 141C of the first back surface electrode 141 in the X direction.
  • Each of the second back surface electrode 142A, the third back surface electrode 143A, and the fourth back surface electrode 144A is arranged closer to the first substrate side surface 23 than the narrow width portion 141C.
  • Each of the second back surface electrode 142B, the third back surface electrode 143B, and the fourth back surface electrode 144B is arranged closer to the second substrate side surface 24 than the narrow width portion 141C.
  • the second back surface electrode 142A is disposed closer to the narrow portion 141C in the X direction than the third back surface electrode 143A and the fourth back surface electrode 144A.
  • the fourth back surface electrode 144A is disposed at a position farther from the narrow portion 141C in the X direction than the second back surface electrode 142A and the third back surface electrode 143A.
  • the second back surface electrode 142B is disposed closer to the narrow portion 141C in the X direction than the third back surface electrode 143B and the fourth back surface electrode 144B.
  • the fourth back surface electrode 144B is disposed at a position farther from the narrow portion 141C in the X direction than the second back surface electrode 142B and the third back surface electrode 143B.
  • the second rear surface electrodes 142A and 142B are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the second rear surface electrodes 142A and 142B extend in the Y direction.
  • the third back electrodes 143A and 143B are in a line-symmetrical relationship with respect to the virtual center line VC.
  • the third back electrode 143A extends in the Y direction and is formed so as to surround the second back electrode 142A from the first substrate side surface 23 side in the X direction and the third substrate side surface 25 side in the Y direction.
  • the third back electrode 143B extends in the Y direction and is formed so as to surround the second back electrode 142B from the second substrate side surface 24 side in the X direction and the third substrate side surface 25 side in the Y direction. Therefore, the end portions of the third back electrodes 143A and 143B near the third substrate side surface 25 in the Y direction are disposed in positions adjacent to the second wide portion 141B in the Y direction.
  • the fourth rear surface electrodes 144A and 144B are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the fourth rear surface electrodes 144A and 144B extend in the Y direction.
  • the tip of the narrow portion 141C of the first back surface electrode 141, the ends of the second back surface electrodes 142A, 142B closer to the fourth substrate side surface 26 in the Y direction, the ends of the third back surface electrodes 143A, 143B closer to the fourth substrate side surface 26 in the Y direction, and the ends of the fourth back surface electrodes 144A, 144B closer to the fourth substrate side surface 26 in the Y direction are arranged at the same position as each other in the Y direction and adjacent to the fourth substrate side surface 26.
  • the second back surface electrode 142C and the second back surface electrode 142D are distributed on both sides of the second wide portion 141B of the first back surface electrode 141 in the X direction.
  • the third back surface electrode 143C and the third back surface electrode 143D are distributed on both sides of the second wide portion 141B of the first back surface electrode 141 in the X direction.
  • the fourth back surface electrode 144C and the fourth back surface electrode 144D are distributed on both sides of the second wide portion 141B of the first back surface electrode 141 in the X direction.
  • Each of the second back surface electrode 142C, the third back surface electrode 143C, and the fourth back surface electrode 144C is disposed closer to the first substrate side surface 23 than the second wide portion 141B.
  • Each of the second back surface electrode 142D, the third back surface electrode 143D, and the fourth back surface electrode 144D is disposed closer to the second substrate side surface 24 than the second wide portion 141B.
  • the second back surface electrode 142C, the third back surface electrode 143C, and the fourth back surface electrode 144C are arranged at a distance from each other in the Y direction.
  • the second back surface electrode 142C is arranged closer to the first wide portion 141A in the Y direction than the third back surface electrode 143C and the fourth back surface electrode 144C.
  • the fourth back surface electrode 144C is arranged at a position farther from the first wide portion 141A in the Y direction than the second back surface electrode 142C and the third back surface electrode 143C.
  • the second back surface electrode 142D, the third back surface electrode 143D, and the fourth back surface electrode 144D are arranged at a distance from each other in the Y direction.
  • the second back surface electrode 142D is arranged closer to the first wide portion 141A in the Y direction than the third back surface electrode 143D and the fourth back surface electrode 144D.
  • the fourth back surface electrode 144D is arranged at a position farther from the first wide portion 141A in the Y direction than the second back surface electrode 142D and the third back surface electrode 143D.
  • the second back electrodes 142C and 142D are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the second back electrodes 142C and 142D extend in the X direction.
  • the second back electrode 142C has a shape obtained by rotating the second back electrode 142B by 90° clockwise.
  • the second back electrode 142D has a shape obtained by rotating the second back electrode 142A by 90° counterclockwise.
  • the third back electrodes 143C, 143D are in a line-symmetrical relationship with respect to the imaginary center line VC.
  • the third back electrode 143C extends in the Y direction and is formed so as to surround the second back electrode 142C from the fourth substrate side surface 26 side in the Y direction and the second wide portion 141B side in the X direction.
  • the third back electrode 143D extends in the Y direction and is formed so as to surround the second back electrode 142D from the fourth substrate side surface 26 side in the Y direction and the second wide portion 141B side in the X direction. Therefore, the ends of the third back electrodes 143C, 143D closer to the second wide portion 141B in the X direction are disposed in positions adjacent to the second wide portion 141B in the X direction.
  • the fourth rear surface electrodes 144C and 144D are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the fourth rear surface electrodes 144C and 144D extend in the X direction. 9, among both ends in the X direction of the first wide portion 141A of the first back surface electrode 141, the end closer to the first substrate side surface 23 in the X direction of the second back surface electrode 142C, the end closer to the first substrate side surface 23 in the X direction of the third back surface electrode 143C, and the end closer to the first substrate side surface 23 in the X direction of the fourth back surface electrode 144C are arranged at the same position in the X direction and adjacent to the first substrate side surface 23.
  • the end closer to the second substrate side surface 24 in the X direction of the second back surface electrode 142D, the end closer to the second substrate side surface 24 in the X direction of the third back surface electrode 143D, and the end closer to the second substrate side surface 24 in the X direction of the fourth back surface electrode 144D are arranged at the same position in the X direction and adjacent to the second substrate side surface 24.
  • the surface-side intermediate electrode 28C includes a first intermediate electrode 151, second intermediate electrodes 152A-152D, third intermediate electrodes 153A-153D, and fourth intermediate electrodes 154A-154D.
  • the area of the first intermediate electrode 151 is larger than the area of each of the second intermediate electrodes 152A to 152D, the third intermediate electrodes 153A to 153D, and the fourth intermediate electrodes 154A to 154D.
  • the area of the first intermediate electrode 151 is larger than the combined area of the second intermediate electrodes 152A to 152D, the third intermediate electrodes 153A to 153D, and the fourth intermediate electrodes 154A to 154D.
  • the area of the first intermediate electrode 151 is larger than 1/2 the area of the substrate surface of the intermediate substrate 27C.
  • the area of the first intermediate electrode 151 is larger than 2/3 the area of the substrate surface of the intermediate substrate 27C.
  • the first intermediate electrode 151 is formed over substantially the entire substrate surface of the intermediate substrate 27C in a planar view.
  • the first intermediate electrode 151 has first openings 151AA-151AD, second openings 151BA-151BD, and third openings 151CA-151CD.
  • the first openings 151AA, 151AB are in an axisymmetric relationship with respect to the virtual center line VC.
  • the second openings 151BA, 151BB are in an axisymmetric relationship with respect to the virtual center line VC.
  • the third openings 151CA, 151CB are in an axisymmetric relationship with respect to the virtual center line VC.
  • the first openings 151AA, 151AB are formed in an elliptical shape with the X direction as the long side and the Y direction as the short side.
  • the second openings 151BA, 151BB are formed in a circular shape.
  • the third openings 151CA, 151CB are formed in an elliptical shape with the X direction as the long side and the Y direction as the short side.
  • the first openings 151AC and 151AD are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the second openings 151BC and 151BD are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the third openings 151CC and 151CD are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the first openings 151AC, 151AD are formed in an elliptical shape with the Y direction as the long side and the X direction as the short side.
  • the second openings 151BC, 151BD are formed in a circular shape.
  • the third openings 151CC, 151CD are formed in an elliptical shape with the Y direction as the long side and the X direction as the short side.
  • a second intermediate electrode 152A is disposed within the first opening 151AA
  • a second intermediate electrode 152B is disposed within the first opening 151AB
  • a second intermediate electrode 152C is disposed within the first opening 151AC
  • a second intermediate electrode 152D is disposed within the first opening 151AD.
  • the second intermediate electrodes 152A-152D are formed in an elliptical shape that is one size smaller than the first openings 152AA-152AD in a plan view.
  • a third intermediate electrode 153A is disposed within the second opening 151BA
  • a third intermediate electrode 153B is disposed within the second opening 151BB
  • a third intermediate electrode 153C is disposed within the second opening 151BC
  • a third intermediate electrode 153D is disposed within the second opening 151BD.
  • the third intermediate electrodes 153A to 153D are formed in a circular shape that is one size smaller than the second openings 151BA to 151BD in a plan view.
  • a fourth intermediate electrode 154A is disposed within the third opening 151CA
  • a fourth intermediate electrode 154B is disposed within the third opening 151CB
  • a fourth intermediate electrode 154C is disposed within the third opening 151CC
  • a fourth intermediate electrode 154D is disposed within the third opening 151CD.
  • the fourth intermediate electrodes 154A to 154D are formed in an elliptical shape that is one size smaller than the third openings 151CA to 151CD in a plan view.
  • the substrate 20 includes first vias 161A to 161D, second vias 162A to 162D, third vias 163A to 163D, and fourth vias 164A to 164D.
  • the first vias 161A to 161D, second vias 162A to 162D, third vias 163A to 163D, and fourth vias 164A to 164D are arranged to penetrate each of the substrates 27A, 27B, 27C, front-side intermediate electrode 28C, and back-side intermediate electrode 28D in the Z direction.
  • the first vias 161A-161D, the second vias 162A-162D, the third vias 163A-163D, and the fourth vias 164A-164D are formed from a material that includes one or more appropriately selected from the following: Ti, TiN, Au, Ag, Cu, Al, and W.
  • the first via 161A is electrically connected to the first surface electrode 131A, the first intermediate electrode 151 of the surface-side intermediate electrode 28C, the first intermediate electrode 151 of the back-side intermediate electrode 28D, and the first back-side electrode 141.
  • the first surface electrode 131A, the first intermediate electrode 151 of the surface-side intermediate electrode 28C, the first intermediate electrode 151 of the back-side intermediate electrode 28D, and the first back-side electrode 141 are electrically connected to each other.
  • a plurality of first vias 161A are provided.
  • the plurality of first vias 161A are provided on the first surface electrode 131A closer to the third substrate side surface 25. Therefore, in a plan view, the plurality of first vias 161A are arranged at positions on the first surface electrode 131A that overlap with the semiconductor light emitting element 30.
  • the plurality of first vias 161A are arranged at a distance from each other in the X direction and the Y direction.
  • the number of first vias 161A arranged in the X direction is greater than the number of first vias 161A arranged in the Y direction.
  • the area in which the plurality of first vias 161A are formed is greater than the area of the semiconductor light emitting element 30. Therefore, some of the plurality of first vias 161A are arranged outside the semiconductor light emitting element 30 in a plan view.
  • the first vias 161B to 161D are electrically connected to the first surface electrode 131B, the first intermediate electrode 151 of the surface-side intermediate electrode 28C, the first intermediate electrode 151 of the back-side intermediate electrode 28D, and the first back-side electrode 141.
  • the first surface electrode 131B, the first intermediate electrode 151 of the surface-side intermediate electrode 28C, the first intermediate electrode 151 of the back-side intermediate electrode 28D, and the first back-side electrode 141 are electrically connected to each other.
  • the first surface electrode 131A and the first surface electrode 131B are electrically connected by such electrode connections by the first vias 161A to 161D.
  • Each of the first vias 161B to 161D is provided in plurality.
  • the number of each of the first vias 161B to 161D is less than the number of the first vias 161A.
  • the multiple first vias 161B connect the end of the first wiring portion 131BA of the first surface electrode 131B closer to the third substrate side surface 25 and the first substrate side surface 23 to the end of the first wide portion 141A of the first back surface electrode 141 closer to the third substrate side surface 25 and the first substrate side surface 23.
  • the multiple first vias 161C connect the end of the second wiring portion 131BB of the first surface electrode 131B closer to the third substrate side surface 25 and the second substrate side surface 24 to the end of the first wide portion 141A of the first back surface electrode 141 closer to the third substrate side surface 25 and the second substrate side surface 24.
  • the multiple first vias 161D connect the center in the X direction of the third wiring portion 131BC of the first surface electrode 131B to the narrow portion 141C of the first back surface electrode 141.
  • each of the second vias 162A to 162D is provided in multiple numbers.
  • the number of each of the second vias 162A to 162D is less than the number of each of the first vias 161A to 161D.
  • the second via 162A is electrically connected to the second surface electrode 132A, the second intermediate electrode 152A of the surface-side intermediate electrode 28C, the second intermediate electrode 152A of the back-side intermediate electrode 28D, and the second back-side electrode 142A.
  • the second surface electrode 132A, the second intermediate electrode 152A of the surface-side intermediate electrode 28C, the second intermediate electrode 152A of the back-side intermediate electrode 28D, and the second back-side electrode 142A are electrically connected to each other.
  • the second via 162B is electrically connected to the second surface electrode 132B, the second intermediate electrode 152B of the surface-side intermediate electrode 28C, the second intermediate electrode 152B of the back-side intermediate electrode 28D, and the second back-side electrode 142B.
  • the second surface electrode 132B, the second intermediate electrode 152B of the surface-side intermediate electrode 28C, the second intermediate electrode 152B of the back-side intermediate electrode 28D, and the second back-side electrode 142B are electrically connected to each other.
  • the second via 162C is electrically connected to the second surface electrode 132C, the second intermediate electrode 152C of the surface-side intermediate electrode 28C, the second intermediate electrode 152C of the back-side intermediate electrode 28D, and the second back-side electrode 142C.
  • the second surface electrode 132C, the second intermediate electrode 152C of the surface-side intermediate electrode 28C, the second intermediate electrode 152C of the back-side intermediate electrode 28D, and the second back-side electrode 142C are electrically connected to each other.
  • the second via 162D is electrically connected to the second surface electrode 132D, the second intermediate electrode 152D of the surface-side intermediate electrode 28C, the second intermediate electrode 152D of the back-side intermediate electrode 28D, and the second back-side electrode 142D.
  • the second surface electrode 132D, the second intermediate electrode 152D of the surface-side intermediate electrode 28C, the second intermediate electrode 152D of the back-side intermediate electrode 28D, and the second back-side electrode 142D are electrically connected to each other.
  • the third via 163A is electrically connected to the third surface electrode 133A, the third intermediate electrode 153A of the surface-side intermediate electrode 28C, the third intermediate electrode 153A of the back-side intermediate electrode 28D, and the third back-side electrode 143A.
  • the third surface electrode 133A, the third intermediate electrode 153A of the surface-side intermediate electrode 28C, the third intermediate electrode 153A of the back-side intermediate electrode 28D, and the third back-side electrode 143A are electrically connected to one another.
  • the third via 163B is electrically connected to the third surface electrode 133B, the third intermediate electrode 153B of the surface-side intermediate electrode 28C, the third intermediate electrode 153B of the back-side intermediate electrode 28D, and the third back-side electrode 143B.
  • the third surface electrode 133B, the third intermediate electrode 153B of the surface-side intermediate electrode 28C, the third intermediate electrode 153B of the back-side intermediate electrode 28D, and the third back-side electrode 143B are electrically connected to each other.
  • the third via 163C is electrically connected to the third surface electrode 133C, the third intermediate electrode 153C of the surface-side intermediate electrode 28C, the third intermediate electrode 153C of the back-side intermediate electrode 28D, and the third back-side electrode 143C.
  • the third surface electrode 133C, the third intermediate electrode 153C of the surface-side intermediate electrode 28C, the third intermediate electrode 153C of the back-side intermediate electrode 28D, and the third back-side electrode 143C are electrically connected to each other.
  • the third via 163D is electrically connected to the third surface electrode 133D, the third intermediate electrode 153D of the surface-side intermediate electrode 28C, the third intermediate electrode 153D of the back-side intermediate electrode 28D, and the third back-side electrode 143D.
  • the third surface electrode 133D, the third intermediate electrode 153D of the surface-side intermediate electrode 28C, the third intermediate electrode 153D of the back-side intermediate electrode 28D, and the third back-side electrode 143D are electrically connected to each other.
  • each of the fourth vias 164A to 164D is provided in multiple numbers.
  • the number of each of the fourth vias 164A to 164D is the same as the number of each of the second vias 162A to 162D.
  • the fourth via 164A is electrically connected to the fourth surface electrode 134A, the fourth intermediate electrode 154A of the surface-side intermediate electrode 28C, the fourth intermediate electrode 154A of the back-side intermediate electrode 28D, and the fourth back-side electrode 144A.
  • the fourth surface electrode 134A, the fourth intermediate electrode 154A of the surface-side intermediate electrode 28C, the fourth intermediate electrode 154A of the back-side intermediate electrode 28D, and the fourth back-side electrode 144A are electrically connected to each other.
  • the fourth via 164B is electrically connected to the fourth surface electrode 134B, the fourth intermediate electrode 154B of the surface-side intermediate electrode 28C, the fourth intermediate electrode 154B of the back-side intermediate electrode 28D, and the fourth back-side electrode 144B.
  • the fourth surface electrode 134B, the fourth intermediate electrode 154B of the surface-side intermediate electrode 28C, the fourth intermediate electrode 154B of the back-side intermediate electrode 28D, and the fourth back-side electrode 144B are electrically connected to each other.
  • the fourth via 164C is electrically connected to the fourth surface electrode 134C, the fourth intermediate electrode 154C of the surface-side intermediate electrode 28C, the fourth intermediate electrode 154C of the back-side intermediate electrode 28D, and the fourth back-side electrode 144C.
  • the fourth surface electrode 134C, the fourth intermediate electrode 154C of the surface-side intermediate electrode 28C, the fourth intermediate electrode 154C of the back-side intermediate electrode 28D, and the fourth back-side electrode 144C are electrically connected to each other.
  • the fourth via 164D is electrically connected to the fourth surface electrode 134D, the fourth intermediate electrode 154D of the surface-side intermediate electrode 28C, the fourth intermediate electrode 154D of the back-side intermediate electrode 28D, and the fourth back-side electrode 144D.
  • the fourth surface electrode 134D, the fourth intermediate electrode 154D of the surface-side intermediate electrode 28C, the fourth intermediate electrode 154D of the back-side intermediate electrode 28D, and the fourth back-side electrode 144D are electrically connected to each other.
  • the semiconductor light emitting element 30 is mounted on the multiple surface electrodes 28A.
  • the semiconductor light emitting element 30 and the first to fourth drive circuits 40, 50, 110, and 120 will be described below. Note that components common to the first embodiment are given the same reference numerals, and descriptions thereof may be omitted.
  • the semiconductor light-emitting element 30 is mounted on the first surface electrode 131A. That is, the element back electrode 35 (not shown in FIG. 8, see FIG. 3) of the semiconductor light-emitting element 30 is joined to the first surface electrode 131A by a conductive bonding material SD (not shown in FIG. 8, see FIG. 3). As a result, the element back electrode 35 is electrically connected to the first surface electrode 131A.
  • the semiconductor light-emitting element 30 is positioned biased toward the third substrate side surface 25 with respect to the center of the first surface electrode 131A in the Y direction.
  • the size, shape, and configuration of the semiconductor light-emitting element 30 of the second embodiment are similar to those of the semiconductor light-emitting element 30 of the first embodiment.
  • the semiconductor light-emitting element 30 of the second embodiment divides the eight light-emitting sections 33 into first to fourth light-emitting sections 33A to 33D, each of which is made up of two light-emitting sections 33.
  • the first light-emitting section 33A is composed of two of the eight light-emitting sections 33 that are closer to the virtual center line VC and are arranged closer to the first substrate side surface 23 than the virtual center line VC.
  • the second light-emitting section 33B is composed of two of the eight light-emitting sections 33 that are closer to the virtual center line VC and are arranged closer to the second substrate side surface 24 than the virtual center line VC.
  • the third light-emitting section 33C is composed of two of the eight light-emitting sections 33 that are at the ends closer to the first substrate side surface 23 in the X direction.
  • the fourth light-emitting section 33D is composed of two of the eight light-emitting sections 33 that are at the ends closer to the second substrate side surface 24 in the X direction.
  • the first switching element 41 in the second embodiment is a vertical transistor, as in the first embodiment.
  • the shape of the source electrode 41S and the position of the gate electrode 41G of the first switching element 41 in the second embodiment are different from those in the first embodiment. More specifically, the gate electrode 41G is disposed in one of the four corners of the second element surface 41A that is closest to the first substrate side surface 23 and the fourth substrate side surface 26.
  • the source electrode 41S is formed over most of the second element surface 41A, and includes a recessed portion that avoids the gate electrode 41G.
  • the first switching element 41 is mounted on the second surface electrode 132A. That is, the drain electrode 41D (not shown in FIG. 8, see FIG. 3) of the first switching element 41 is joined to the second surface electrode 132A by a conductive bonding material SD (not shown in FIG. 8, see FIG. 3). As a result, the drain electrode 41D is electrically connected to the second surface electrode 132A.
  • the first switching element 41 is disposed in the narrow portion of the second surface electrode 132A.
  • the source electrode 41S of the first switching element 41 and the multiple first element surface electrodes 34A corresponding to the first light emitting portion 33A of the semiconductor light emitting element 30 are electrically connected by multiple wires W1.
  • the source electrode 41S of the first switching element 41 and the fourth surface electrode 134A are electrically connected by wire W2.
  • the gate electrode 41G of the first switching element 41 and the third surface electrode 133A are electrically connected by wire W3.
  • the semiconductor light-emitting element 30 and the first capacitor 42 are arranged spaced apart from each other in the Y direction.
  • the first capacitor 42 is arranged on the opposite side of the first switching element 41 from the semiconductor light-emitting element 30 in the Y direction.
  • the first switching element 41 is arranged between the semiconductor light-emitting element 30 and the first capacitor 42 in the Y direction.
  • a plurality of first capacitors 42 (four in the second embodiment) are provided.
  • the plurality of first capacitors 42 are connected in parallel to each other.
  • the plurality of first capacitors 42 are arranged at a distance from each other in the X direction.
  • Each first capacitor 42 is arranged to straddle the second surface electrode 132A and the third wiring portion 131BC of the first surface electrode 131B in the Y direction.
  • Each first capacitor 42 is mounted on the second surface electrode 132A and the third wiring portion 131BC. More specifically, each first capacitor 42 is individually bonded to the second surface electrode 132A and the third wiring portion 131BC by a conductive bonding material SD (not shown in FIG. 8, see FIG. 3).
  • a conductive bonding material SD not shown in FIG. 8, see FIG. 3
  • the first electrode 42A is bonded to the second surface electrode 132A by the conductive bonding material SD.
  • the first electrode 42A is electrically connected to the second surface electrode 132A.
  • the second electrode 42B is joined to the third wiring portion 131BC by a conductive bonding material SD. This electrically connects the second electrode 42B to the third wiring portion 131BC (first surface electrode 131B).
  • the first electrode 42A of each first capacitor 42 is disposed on the wide portion of the second surface electrode 132A.
  • the multiple first capacitors 42 aligned in the X direction are disposed across the entire wide portion in the X direction.
  • the X direction dimension of the wide portion is set so that the multiple first capacitors 42 aligned in the X direction can be disposed.
  • the second electrode 42B of each first capacitor 42 is disposed at one of the ends in the Y direction of the third wiring portion 131BC that is closer to the second surface electrode 132A. In other words, the second electrode 42B of each first capacitor 42 is disposed closer to the second surface electrode 132A than the first vias 161D in the Y direction. Some of the first capacitors 42 are disposed closer to the first substrate side surface 23 than the first switching elements 41 when viewed from the Y direction.
  • the second switching element 51 of the second embodiment uses a vertical transistor as in the first embodiment.
  • the shape of the source electrode 51S and the position of the gate electrode 51G of the second switching element 51 of the second embodiment are different from those of the first embodiment.
  • the gate electrode 51G is disposed in one of the four corners of the second element surface 51A that is closest to the second substrate side surface 24 and the fourth substrate side surface 26.
  • the source electrode 51S is formed over most of the second element surface 51A and includes a recessed portion that avoids the gate electrode 51G.
  • the configuration of the second switching element 51 is different from the configuration of the first switching element 41.
  • the second switching element 51 is mounted on the second surface electrode 132B. That is, the drain electrode 51D (not shown in FIG. 8, see FIG. 11) of the second switching element 51 is joined to the second surface electrode 132B by a conductive bonding material SD. As a result, the drain electrode 51D is electrically connected to the second surface electrode 132B.
  • the second switching element 51 is disposed in the narrow portion of the second surface electrode 132B.
  • the distance D1 between the semiconductor light-emitting element 30 and the first switching element 41 in the Y direction is equal to the distance D2 between the semiconductor light-emitting element 30 and the second switching element 51 in the Y direction.
  • the difference between the distances D1 and D2 is, for example, within 10% of the distance D1, then it can be said that the distance D1 is equal to the distance D2.
  • the source electrode 51S of the second switching element 51 and the multiple second element surface electrodes 34B corresponding to the second light emitting portion 33B of the semiconductor light emitting element 30 are electrically connected by multiple wires W1.
  • the source electrode 51S of the second switching element 51 and the fourth surface electrode 134B are electrically connected by a wire W2.
  • the gate electrode 51G of the second switching element 51 and the third surface electrode 133B are electrically connected by a wire W3.
  • the lengths of the two wires W1 connecting the first element surface electrode 34A and the source electrode 41S of the first switching element 41 are equal to each other. In one example, in a planar view, the lengths of the two wires W1 connecting the second element surface electrode 34B and the source electrode 51S of the second switching element 51 are equal to each other.
  • each wire W1 can be adjusted so that the total length of the two wires W1 connecting the first element surface electrode 34A and the source electrode 41S of the first switching element 41 is equal to the total length of the two wires W1 connecting the second element surface electrode 34B and the source electrode 51S of the second switching element 51 when viewed in a planar view.
  • the difference between the total length of the two wires W1 connecting the first element surface electrode 34A and the source electrode 41S of the first switching element 41 in a planar view and the total length of the two wires W1 connecting the second element surface electrode 34B and the source electrode 51S of the second switching element 51 in a planar view is, for example, within 10% of the total length of the two wires W1 connecting the first element surface electrode 34A and the source electrode 41S of the first switching element 41 in a planar view, it can be said that the total length of the two wires W1 connecting the first element surface electrode 34A and the source electrode 41S of the first switching element 41 in a planar view is equal to the total length of the two wires W1 connecting the second element surface electrode 34B and the source electrode 51S of the second switching element 51.
  • the semiconductor light-emitting element 30 and the second capacitor 52 are arranged spaced apart from each other in the Y direction.
  • the second capacitor 52 is arranged on the opposite side of the second switching element 51 from the semiconductor light-emitting element 30 in the Y direction.
  • the second switching element 51 is arranged between the semiconductor light-emitting element 30 and the second capacitor 52 in the Y direction.
  • a plurality of second capacitors 52 (four in the second embodiment) are provided.
  • the plurality of second capacitors 52 are connected in parallel with each other.
  • the plurality of second capacitors 52 are arranged at a distance from each other in the X direction.
  • Each second capacitor 52 is arranged to straddle the second surface electrode 132B and the third wiring portion 131BC of the first surface electrode 131B in the Y direction.
  • Each second capacitor 52 is mounted on the second surface electrode 132B and the third wiring portion 131BC. More specifically, each second capacitor 52 is individually bonded to the second surface electrode 132B and the third wiring portion 131BC by a conductive bonding material SD (not shown).
  • SD conductive bonding material
  • the first electrode 52A is bonded to the second surface electrode 132B by the conductive bonding material SD.
  • the first electrode 52A is electrically connected to the second surface electrode 132B.
  • the second electrode 52B is joined to the third wiring portion 131BC by a conductive bonding material SD. This electrically connects the second electrode 52B to the third wiring portion 131BC (first surface electrode 131B). Therefore, it can be said that the second electrode 52B of the second capacitor 52 and the second electrode 42B of the first capacitor 42 are electrically connected.
  • the first electrode 52A of each second capacitor 52 is disposed on the wide portion of the second surface electrode 132B.
  • the multiple second capacitors 52 aligned in the X direction are disposed across the entire wide portion in the X direction.
  • the X direction dimension of the wide portion is set so that the multiple second capacitors 52 aligned in the X direction can be disposed.
  • the second electrode 52B of each second capacitor 52 is disposed at one of the ends of the third wiring portion 131BC in the Y direction that is closer to the second surface electrode 132B. In other words, the second electrode 52B of each second capacitor 52 is disposed closer to the second surface electrode 132B than the multiple first vias 161D in the Y direction. Some of the multiple second capacitors 52 are disposed closer to the second substrate side surface 24 than the second switching element 51 when viewed from the Y direction.
  • the third switching element 111 has the same configuration and size as the second switching element 51 of the second embodiment.
  • the third switching element 111 includes a second element front surface 111A and a second element back surface (not shown) facing opposite sides to each other in the Z direction.
  • a source electrode 111S and a gate electrode 111G are formed on the second element front surface 111A.
  • a drain electrode 111D (not shown in FIG. 8, see FIG. 11) is formed on the second element back surface.
  • the shape, configuration, and arrangement of the source electrode 111S and the gate electrode 111G are the same as those of the source electrode 51S and the gate electrode 51G.
  • the third switching element 111 is mounted on the second surface electrode 132C.
  • the drain electrode 111D of the third switching element 111 is joined to the second surface electrode 132C by a conductive bonding material SD.
  • the drain electrode 111D is electrically connected to the second surface electrode 132C.
  • the third switching element 111 is disposed in the narrow portion of the second surface electrode 132C. Therefore, the third switching element 111 is disposed closer to the first substrate side surface 23 than the semiconductor light emitting element 30 in the X direction. The third switching element 111 is disposed in a position overlapping the semiconductor light emitting element 30 when viewed from the X direction.
  • the source electrode 111S of the third switching element 111 and the third element surface electrodes 34C corresponding to the third light emitting portion 33C of the semiconductor light emitting element 30 are electrically connected by a plurality of wires W1.
  • the source electrode 111S of the third switching element 111 and the fourth surface electrode 134C are electrically connected by a wire W2.
  • the gate electrode 111G of the third switching element 111 and the third surface electrode 133C are electrically connected by a wire W3.
  • the semiconductor light-emitting element 30 and the third capacitor 112 are arranged spaced apart from each other in the X direction.
  • the third capacitor 112 is arranged on the opposite side of the third switching element 111 from the semiconductor light-emitting element 30 in the X direction.
  • the third switching element 111 is arranged between the semiconductor light-emitting element 30 and the third capacitor 112 in the X direction.
  • a plurality of third capacitors 112 (four in the second embodiment) are provided.
  • the plurality of third capacitors 112 are connected in parallel to each other.
  • the plurality of third capacitors 112 are arranged at a distance from each other in the Y direction.
  • Each third capacitor 112 is arranged so as to straddle the second surface electrode 132C and the first wiring portion 131BA of the first surface electrode 131B in the X direction.
  • Each third capacitor 112 is mounted on the second surface electrode 132C and the first wiring portion 131BA.
  • Each third capacitor 112 is individually bonded to the second surface electrode 132C and the first wiring portion 131BA by a conductive bonding material SD (not shown). More specifically, each third capacitor 112 includes a first electrode 112A and a second electrode 112B.
  • the first electrode 112A is bonded to the second surface electrode 132C by a conductive bonding material SD.
  • the first electrode 112A is electrically connected to the second surface electrode 132C.
  • the second electrode 112B is joined to the first wiring portion 131BA by the conductive bonding material SD.
  • the second electrode 112B is electrically connected to the first wiring portion 131BA (first surface electrode 131B). Therefore, it can be said that the second electrode 112B of the third capacitor 112 and the second electrode 42B of the first capacitor 42 are electrically connected.
  • each third capacitor 112 is disposed on the wide portion of the second surface electrode 132C.
  • the multiple third capacitors 112 aligned in the Y direction are disposed across the entire wide portion in the Y direction. In other words, the Y direction dimension of the wide portion is set so that the multiple third capacitors 112 aligned in the Y direction can be disposed.
  • the second electrode 112B of each third capacitor 112 is disposed at one of the ends in the X direction of the first wiring portion 131BA that is closer to the second surface electrode 132C. In other words, the second electrode 112B of each third capacitor 112 is disposed closer to the second surface electrode 132C than the first vias 161B in the X direction. Some of the third capacitors 112 are disposed closer to the fourth substrate side surface 26 than the third switching element 111 when viewed from the X direction.
  • the fourth switching element 121 has the same configuration and size as the first switching element 41 of the second embodiment.
  • the fourth switching element 121 includes a second element front surface 121A and a second element back surface (not shown) facing opposite sides to each other in the Z direction.
  • a source electrode 121S and a gate electrode 121G are formed on the second element front surface 121A.
  • a drain electrode 121D (not shown in FIG. 8, see FIG. 11) is formed on the second element back surface.
  • the shape, configuration, and arrangement of the source electrode 121S and the gate electrode 121G are the same as those of the source electrode 41S and the gate electrode 41G.
  • the fourth switching element 121 is mounted on the second surface electrode 132D.
  • the drain electrode 121D of the fourth switching element 121 is joined to the second surface electrode 132D by a conductive bonding material SD (not shown). This allows the drain electrode 121D to be electrically connected to the second surface electrode 132D.
  • the fourth switching element 121 is disposed in the narrow portion of the second surface electrode 132D. Therefore, the fourth switching element 121 is disposed closer to the second substrate side surface 24 than the semiconductor light emitting element 30 in the X direction.
  • the fourth switching element 121 is disposed at a position overlapping the semiconductor light emitting element 30 when viewed from the X direction. In this way, it can be said that the third switching element 111 and the fourth switching element 121 are disposed in a dispersed manner on both sides of the semiconductor light emitting element 30 in the X direction.
  • the distance D3 between the semiconductor light emitting element 30 and the third switching element 111 in the X direction is equal to the distance D4 between the semiconductor light emitting element 30 and the fourth switching element 121 in the X direction.
  • the difference between the distances D3 and D4 is, for example, within 10% of the distance D3, it can be said that the distance D3 is equal to the distance D4.
  • the source electrode 121S of the fourth switching element 121 and the multiple fourth element surface electrodes 34D corresponding to the fourth light emitting portion 33D of the semiconductor light emitting element 30 are electrically connected by multiple wires W1.
  • the source electrode 121S of the fourth switching element 121 and the fourth surface electrode 134D are also electrically connected by wire W2.
  • the gate electrode 121G of the fourth switching element 121 and the third surface electrode 133D are also electrically connected by wire W3.
  • each wire W1 can be adjusted so that the total length of the two wires W1 connecting the third element surface electrode 34C and the source electrode 111S of the third switching element 111 is equal to the total length of the two wires W1 connecting the fourth element surface electrode 34D and the source electrode 121S of the fourth switching element 121 when viewed in a planar view.
  • the difference between the total length of the two wires W1 connecting the third element surface electrode 34C and the source electrode 111S of the third switching element 111 in a planar view and the total length of the two wires W1 connecting the fourth element surface electrode 34D and the source electrode 121S of the fourth switching element 121 in a planar view is, for example, within 10% of the total length of the two wires W1 connecting the third element surface electrode 34C and the source electrode 111S of the third switching element 111 in a planar view, it can be said that the total length of the two wires W1 connecting the third element surface electrode 34C and the source electrode 111S of the third switching element 111 in a planar view is equal to the total length of the two wires W1 connecting the fourth element surface electrode 34D and the source electrode 121S of the fourth switching element 121.
  • the semiconductor light-emitting element 30 and the fourth capacitor 122 are disposed at a distance from each other in the X direction.
  • the fourth capacitor 122 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the fourth switching element 121 in the X direction.
  • the fourth switching element 121 is disposed between the semiconductor light-emitting element 30 and the fourth capacitor 122 in the X direction. In this way, it can be said that the third capacitor 112 and the fourth capacitor 122 are disposed dispersedly on both sides of the semiconductor light-emitting element 30 in the X direction.
  • a plurality of fourth capacitors 122 (four in the second embodiment) are provided.
  • the plurality of fourth capacitors 122 are connected in parallel to each other.
  • the plurality of fourth capacitors 122 are arranged at a distance from each other in the Y direction.
  • Each fourth capacitor 122 is arranged so as to straddle the second surface electrode 132D and the second wiring portion 131BB of the first surface electrode 131B in the X direction.
  • Each fourth capacitor 122 is mounted on the second surface electrode 132D and the second wiring portion 131BB.
  • Each fourth capacitor 122 is individually bonded to the second surface electrode 132D and the second wiring portion 131BB by a conductive bonding material SD (not shown). More specifically, each fourth capacitor 122 includes a first electrode 122A and a second electrode 122B.
  • each first electrode 122A is bonded to the second surface electrode 132D by a conductive bonding material SD.
  • the first electrode 122A is electrically connected to the second surface electrode 132D.
  • Each second electrode 122B is joined to the second wiring portion 131BB by the conductive bonding material SD.
  • the second electrode 122B is electrically connected to the second wiring portion 131BB (first surface electrode 131B). Therefore, it can be said that the second electrode 122B of the fourth capacitor 122 and the second electrode 42B of the first capacitor 42 are electrically connected.
  • the second electrodes 42B, 52B, 112B, and 122B of the first to fourth capacitors 42, 52, 112, and 122 are electrically connected to each other via the first surface electrode 131B.
  • the first electrode 122A of each fourth capacitor 122 is disposed on the wide portion of the second surface electrode 132D.
  • the multiple fourth capacitors 122 aligned in the Y direction are disposed across the entire wide portion in the Y direction. In other words, the Y direction dimension of the wide portion is set so that the multiple fourth capacitors 122 aligned in the Y direction can be disposed.
  • the second electrode 122B of each fourth capacitor 122 is disposed at one of the two ends in the X direction of the second wiring portion 131BB that is closer to the second surface electrode 132D. In other words, the second electrode 122B of each fourth capacitor 122 is disposed closer to the second surface electrode 132D than the multiple first vias 161C in the X direction. Some of the multiple fourth capacitors 122 are disposed closer to the fourth substrate side surface 26 than the fourth switching element 121 when viewed from the X direction.
  • the semiconductor light emitting device 10 further includes first to fourth protection diodes 101 to 104 .
  • the first protection diode 101 is a diode that protects the first light emitting portion 33A of the semiconductor light emitting element 30.
  • the first protection diode 101 is disposed closer to the first substrate side surface 23 than the semiconductor light emitting element 30, the first switching element 41, and the first capacitors 42 in the X direction.
  • the first protection diode 101 is disposed at a position overlapping the third switching element 111 when viewed from the Y direction.
  • the first protection diode 101 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the first switching element 41 in the Y direction.
  • the first protection diode 101 is disposed at the same position as the first capacitor 42 in the Y direction.
  • the first protection diode 101 is disposed so as to straddle the fourth surface electrode 134A and the third wiring portion 131BC of the first surface electrode 131B in the Y direction.
  • the first protection diode 101 is disposed so that the first anode electrode 101A and the first cathode electrode 101B are disposed at the same position as each other in the X direction and are separated from each other in the Y direction.
  • the first protection diode 101 is mounted on the fourth surface electrode 134A and the first surface electrode 131B. More specifically, the first protection diode 101 is individually bonded to the fourth surface electrode 134A and the first surface electrode 131B by a conductive bonding material SD.
  • the first protection diode 101 is connected in inverse parallel to the first light emitting portion 33A. More specifically, the first anode electrode 101A is bonded to the first surface electrode 131B by a conductive bonding material SD. The first anode electrode 101A is disposed in the third wiring portion 131BC of the first surface electrode 131B. As a result, the first anode electrode 101A and the element back surface electrode 35 of the semiconductor light emitting element 30 are electrically connected via the first surface electrode 131B.
  • the first cathode electrode 101B is bonded to the fourth surface electrode 134A by a conductive bonding material SD. The first cathode electrode 101B is disposed in the second opposing portion of the fourth surface electrode 134A.
  • the first cathode electrode 101B is electrically connected to the first element surface electrodes 34A corresponding to the first light emitting portion 33A of the semiconductor light emitting element 30 via the wire W2, the source electrode 41S of the first switching element 41, and the wire W1.
  • the second protection diode 102 is a diode that protects the second light-emitting portion 33B of the semiconductor light-emitting element 30.
  • the second protection diode 102 is disposed closer to the second substrate side surface 24 in the X direction than the semiconductor light-emitting element 30, the second switching element 51, and the multiple second capacitors 52.
  • the second protection diode 102 is disposed at a position overlapping with the fourth switching element 121 when viewed from the Y direction.
  • the second protection diode 102 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the second switching element 51 in the Y direction.
  • the second protection diode 102 is disposed at the same position as the second capacitor 52 in the Y direction.
  • the second protection diode 102 is disposed so as to straddle the Y direction between the fourth surface electrode 134B and the third wiring portion 131BC of the first surface electrode 131B.
  • the second protection diode 102 is mounted on the fourth surface electrode 134B and the first surface electrode 131B.
  • the mounting manner of the second protection diode 102 is the same as that of the first protection diode 101.
  • the second protection diode 102 is connected in inverse parallel to the second light emitting portion 33B. More specifically, the second anode electrode 102A is joined to the third wiring portion 131BC of the first surface electrode 131B by a conductive bonding material SD. This electrically connects the second anode electrode 102A and the element back surface electrode 35 of the semiconductor light emitting element 30 via the first surface electrode 131B. The second cathode electrode 102B is joined to the second opposing portion of the fourth surface electrode 134B by a conductive bonding material SD.
  • the third protection diode 103 is a diode that protects the third light-emitting portion 33C of the semiconductor light-emitting element 30.
  • the third protection diode 103 is disposed closer to the fourth substrate side surface 26 in the Y direction than the semiconductor light-emitting element 30, the third switching element 111, and the multiple third capacitors 112.
  • the third protection diode 103 is disposed at a position overlapping the first switching element 41 when viewed from the X direction.
  • the third protection diode 103 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the third switching element 111 in the X direction.
  • the third protection diode 103 is disposed at the same position as the third capacitor 112 in the X direction.
  • the third protection diode 103 is disposed so as to straddle the Y direction between the fourth surface electrode 134C and the first wiring portion 131BA of the first surface electrode 131B.
  • the third protection diode 103 includes a third anode electrode 103A and a third cathode electrode 103B.
  • the third protection diode 103 is arranged such that the third anode electrode 103A and the third cathode electrode 103B are at the same position in the Y direction and spaced apart from each other in the X direction.
  • the third protection diode 103 is mounted on the fourth surface electrode 134C and the first surface electrode 131B. More specifically, the third protection diode 103 is individually bonded to the fourth surface electrode 134C and the first surface electrode 131B by a conductive bonding material SD.
  • the third protection diode 103 is connected in inverse parallel to the third light emitting portion 33C. More specifically, the third anode electrode 103A is bonded to the first surface electrode 131B by a conductive bonding material SD. The third anode electrode 103A is disposed in the first wiring portion 131BA of the first surface electrode 131B. As a result, the third anode electrode 103A and the element back electrode 35 of the semiconductor light emitting element 30 are electrically connected via the first surface electrode 131B.
  • the third cathode electrode 103B is bonded to the fourth surface electrode 134C by a conductive bonding material SD. The third cathode electrode 103B is disposed in the second opposing portion of the fourth surface electrode 134C.
  • the third cathode electrode 103B is electrically connected to a plurality of third element surface electrodes 34C corresponding to the third light emitting portion 33C of the semiconductor light emitting element 30 via the wire W2, the source electrode 111S of the third switching element 111, and the wire W1.
  • the fourth protection diode 104 is a diode that protects the fourth light-emitting portion 33D of the semiconductor light-emitting element 30.
  • the fourth protection diode 104 is disposed closer to the fourth substrate side surface 26 in the Y direction than the semiconductor light-emitting element 30, the fourth switching element 121, and the multiple fourth capacitors 122.
  • the fourth protection diode 104 is disposed at a position overlapping the second switching element 51 when viewed from the X direction.
  • the fourth protection diode 104 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the fourth switching element 121 in the X direction.
  • the fourth protection diode 104 is disposed at the same position as the fourth capacitor 122 in the X direction.
  • the fourth protection diode 104 is disposed so as to straddle the Y direction between the fourth surface electrode 134D and the second wiring portion 131BB of the first surface electrode 131B.
  • the fourth protection diode 104 includes a fourth anode electrode 104A and a fourth cathode electrode 104B.
  • the fourth protection diode 104 is arranged such that the fourth anode electrode 104A and the fourth cathode electrode 104B are at the same position in the Y direction and spaced apart from each other in the X direction.
  • the fourth protection diode 104 is mounted on the fourth surface electrode 134D and the first surface electrode 131B. More specifically, the fourth protection diode 104 is individually bonded to the fourth surface electrode 134D and the first surface electrode 131B by a conductive bonding material SD.
  • the fourth protection diode 104 is connected in inverse parallel to the fourth light emitting portion 33D. More specifically, the fourth anode electrode 104A is bonded to the first surface electrode 131B by a conductive bonding material SD. The fourth anode electrode 104A is disposed on the second wiring portion 131BB of the first surface electrode 131B. As a result, the fourth anode electrode 104A and the element back electrode 35 of the semiconductor light emitting element 30 are electrically connected via the first surface electrode 131B.
  • the fourth cathode electrode 104B is bonded to the fourth surface electrode 134D by a conductive bonding material SD. The fourth cathode electrode 104B is disposed on the second opposing portion of the fourth surface electrode 134D.
  • the fourth cathode electrode 104B is electrically connected to a plurality of fourth element surface electrodes 34D corresponding to the fourth light emitting portion 33D of the semiconductor light emitting element 30 via the wire W2, the source electrode 121S of the fourth switching element 121, and the wire W1.
  • the first to fourth anode electrodes 101A to 104A of the first to fourth protection diodes 101 to 104 are electrically connected to each other via the first surface electrode 131B.
  • the light-emitting system 800 includes a DC power supply 801, a capacitor 802, a current limiting resistor 803, a gate driver IC 805, a pulse generator 806, and a control power supply 807, similar to the first embodiment.
  • the light-emitting system 800 also includes four backflow prevention diodes 804A to 804D, unlike the first embodiment. Below, differences from the first embodiment will be described in detail, and a description of the configuration common to the first embodiment will be omitted.
  • the anodes of the reverse current prevention diodes 804A to 804D are electrically connected to the current limiting resistor 803.
  • the cathode of the reverse current prevention diode 804A is electrically connected to the second back surface electrode 142A
  • the cathode of the reverse current prevention diode 804B is electrically connected to the second back surface electrode 142B
  • the cathode of the reverse current prevention diode 804C is electrically connected to the second back surface electrode 142C
  • the cathode of the reverse current prevention diode 804D is electrically connected to the second back surface electrode 142D.
  • the drain electrode 41D of the first switching element 41 and the first electrode 42A of the first capacitor 42 are electrically connected to the cathode of the reverse current prevention diode 804A via the second back electrode 142A.
  • the drain electrode 51D of the second switching element 51 and the first electrode 52A of the second capacitor 52 are electrically connected to the cathode of the reverse current prevention diode 804B via the second back electrode 142B.
  • the drain electrode 111D of the third switching element 111 and the first electrode 112A of the third capacitor 112 are electrically connected to the cathode of the reverse current prevention diode 804C via the second back electrode 142C.
  • the drain electrode 121D of the fourth switching element 121 and the first electrode 122A of the fourth capacitor 122 are electrically connected to the cathode of the reverse current prevention diode 804D via the second back electrode 142D.
  • the source electrode 41S of the first switching element 41 is electrically connected to the first element surface electrode 34A (see FIG. 8) which serves as the first anode electrode of the first light-emitting portion 33A and the first cathode electrode 101B of the first protection diode 101.
  • the source electrode 51S of the second switching element 51 is electrically connected to the second element surface electrode 34B (see FIG. 8) which serves as the second anode electrode of the second light-emitting portion 33B and the second cathode electrode 102B of the second protection diode 102.
  • the source electrode 111S of the third switching element 111 is electrically connected to the third element surface electrode 34C which serves as the third anode electrode of the third light-emitting portion 33C and the third cathode electrode 103B of the third protection diode 103.
  • the source electrode 121S of the fourth switching element 121 is electrically connected to the fourth element surface electrode 34D, which serves as the fourth anode electrode of the fourth light-emitting portion 33D, and the fourth cathode electrode 104B of the fourth protection diode 104.
  • the element back electrode 35 which serves as a common cathode electrode for the first to fourth light-emitting parts 33A to 33D, the first to fourth anode electrodes 101A to 104A of the first to fourth protection diodes 101 to 104, and the second electrodes 42B, 52B, 112B, and 122B of the first to fourth capacitors 42, 52, 112, and 122 are electrically connected to the first back electrode 141.
  • the element back electrode 35 which serves as the cathode for the first to fourth light-emitting parts 33A to 33D, the first to fourth anode electrodes 101A to 104A of the first to fourth protection diodes 101 to 104, and the second electrodes 42B, 52B, 112B, and 122B of the first to fourth capacitors 42, 52, 112, and 122 can be said to be connected to ground.
  • the gate driver IC 805 is electrically connected to the gate electrodes 41G, 51G, 111G, and 121G of the first to fourth switching elements 41, 51, 111, and 121, respectively.
  • the gate driver IC 805 is configured to individually control the first to fourth switching elements 41, 51, 111, and 121.
  • the driving of the first to fourth light emitting units 33A to 33D in the semiconductor light emitting device 10 of the second embodiment is the same as in the first embodiment.
  • the third drive circuit 110 includes a third switching element 111 that controls the drive of the third light-emitting unit 33C, and a third capacitor 112 that supplies current to the third light-emitting unit 33C.
  • the fourth drive circuit 120 includes a fourth switching element 121 that controls the drive of the fourth light-emitting unit 33D, and a fourth capacitor 122 that supplies current to the fourth light-emitting unit 33D.
  • a loop-shaped third current path formed by the third light-emitting portion 33C of the semiconductor light-emitting element 30, the third switching element 111, and the third capacitor 112 can be formed in the semiconductor light-emitting device 10. This shortens the length of the third current path, so that the inductance caused by the length of the third current path can be reduced.
  • a loop-shaped fourth current path formed by the fourth light-emitting portion 33D of the semiconductor light-emitting element 30, the fourth switching element 121, and the fourth capacitor 122 can be formed in the semiconductor light-emitting device 10. This shortens the length of the fourth current path, so that the inductance caused by the length of the fourth current path can be reduced.
  • both the third current path and the fourth current path are short, the variation in the lengths of the third current path and the fourth current path can be reduced. Therefore, the variation in inductance of the third current path and the fourth current path can be reduced.
  • the semiconductor light-emitting element 30 and the third capacitor 112 are spaced apart from each other in the X direction.
  • the third switching element 111 is located between the semiconductor light-emitting element 30 and the third capacitor 112 in the X direction.
  • the semiconductor light-emitting element 30 and the fourth capacitor 122 are spaced apart from each other in the X direction.
  • the fourth switching element 121 is located between the semiconductor light-emitting element 30 and the fourth capacitor 122 in the Y direction.
  • the loop-shaped third current path formed by the third light-emitting portion 33C of the semiconductor light-emitting element 30, the third switching element 111, and the third capacitor 112 can be shortened compared to a configuration in which the third switching element 111 is arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the third capacitor 112 in the X direction.
  • the loop-shaped fourth current path formed by the fourth light-emitting portion 33D of the semiconductor light-emitting element 30, the fourth switching element 121, and the fourth capacitor 122 can be shortened compared to a configuration in which the fourth switching element 121 is arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the fourth capacitor 122 in the X direction.
  • the distance D3 between the semiconductor light-emitting element 30 and the third switching element 111 in the X direction is equal to the distance D4 between the semiconductor light-emitting element 30 and the fourth switching element 121 in the X direction.
  • the current path between the semiconductor light-emitting element 30 and the third switching element 111 and the current path between the semiconductor light-emitting element 30 and the fourth switching element 121 are equal to each other. This reduces the variation in length between the loop-shaped third current path formed by the third light-emitting portion 33C of the semiconductor light-emitting element 30, the third switching element 111, and the third capacitor 112, and the loop-shaped fourth current path formed by the fourth light-emitting portion 33D of the semiconductor light-emitting element 30, the fourth switching element 121, and the fourth capacitor 122.
  • the multiple third capacitors 112 and multiple fourth capacitors 122 are connected in parallel to each other.
  • the multiple fourth capacitors 122 are connected in parallel to each other.
  • the multiple third capacitors 112 are connected in parallel with each other, so that the total inductance of the multiple third capacitors 112 can be reduced below the inductance of each of the third capacitors 112.
  • the multiple fourth capacitors 122 are connected in parallel with each other, so that the total inductance of the multiple fourth capacitors 122 can be reduced below the inductance of each of the fourth capacitors 122.
  • the third capacitors 112 are arranged spaced apart from one another in the Y direction.
  • the fourth capacitors 122 are arranged spaced apart from one another in the Y direction.
  • the arrangement direction (Y direction) of the multiple third capacitors 112 is orthogonal to the arrangement direction (X direction) of the semiconductor light emitting element 30, the third switching element 111, and the third capacitor 112 in a plan view. Therefore, the length of the loop-shaped third current path formed by the third light emitting unit 33C of the semiconductor light emitting element 30, the third switching element 111, and the third capacitor 112 can be shortened.
  • the arrangement direction (Y direction) of the multiple fourth capacitors 122 is orthogonal to the arrangement direction (X direction) of the semiconductor light emitting element 30, the fourth switching element 121, and the fourth capacitor 122 in a plan view. Therefore, the length of the loop-shaped fourth current path formed by the fourth light emitting unit 33D of the semiconductor light emitting element 30, the fourth switching element 121, and the fourth capacitor 122 can be shortened.
  • the semiconductor light-emitting device 10 further includes a third protection diode 103 connected in anti-parallel to the third light-emitting portion 33C, and a fourth protection diode 104 connected in anti-parallel to the fourth light-emitting portion 33D.
  • the third and fourth protection diodes 103, 104 can protect the third and fourth light emitting portions 33C, 33D individually.
  • the third protection diode 103 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the third switching element 111 in the X direction.
  • the fourth protection diode 104 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the fourth switching element 121 in the X direction.
  • the third protection diode 103 is disposed spaced apart from the third capacitor 112 in the Y direction.
  • the fourth protection diode 104 is disposed spaced apart from the fourth capacitor 122 in the Y direction.
  • the length of the loop-shaped third current path formed by the semiconductor light-emitting element 30, the third switching element 111, and the third capacitor 112 can be shortened, compared to a configuration in which the third protection diode 103 is disposed between the semiconductor light-emitting element 30 and the third switching element 111, or between the third switching element 111 and the third capacitor 112.
  • the length of the loop-shaped fourth current path formed by the semiconductor light-emitting element 30, the fourth switching element 121, and the fourth capacitor 122 can be shortened, compared to a configuration in which the fourth protection diode 104 is disposed between the semiconductor light-emitting element 30 and the fourth switching element 121, or between the fourth switching element 121 and the fourth capacitor 122.
  • the region in which the multiple first vias 161B are formed is arranged in a position overlapping the region in which the multiple first vias 161A are formed when viewed from the X direction.
  • the region in which the multiple first vias 161C are formed is arranged in a position overlapping the region in which the multiple first vias 161A are formed when viewed from the X direction.
  • the path that flows through the first intermediate electrode 151 is a path along the X direction. Therefore, the loop of the third current path can be made smaller, and the inductance of the third current path can be reduced.
  • the path that flows through the first intermediate electrode 151 is a path along the X direction. Therefore, the loop of the fourth current path can be made smaller, thereby reducing the inductance of the fourth current path.
  • the third switching element 111 is arranged at a position overlapping the third light-emitting portion 33C of the semiconductor light-emitting element 30 when viewed from the X direction.
  • the fourth switching element 121 is arranged at a position overlapping the fourth light-emitting portion 33D of the semiconductor light-emitting element 30 when viewed from the X direction.
  • the distance between the third switching element 111 and the semiconductor light-emitting element 30 can be shortened compared to a configuration in which the third switching element 111 is disposed at a position offset in the Y direction relative to the semiconductor light-emitting element 30. Therefore, when the source electrode 111S of the third switching element 111 and the third element surface electrode 34C of the semiconductor light-emitting element 30 are connected by a wire W1, the length of the wire W1 can be shortened. Compared to a configuration in which the fourth switching element 121 is disposed at a position offset in the Y direction relative to the semiconductor light-emitting element 30, the distance between the fourth switching element 121 and the semiconductor light-emitting element 30 can be shortened. Therefore, when the source electrode 121S of the fourth switching element 121 and the fourth element surface electrode 34D of the semiconductor light-emitting element 30 are connected by a wire W1, the length of the wire W1 can be shortened.
  • the semiconductor light emitting device 10 of the third embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in that it includes a first switching element 171 and a second switching element 181 instead of the first switching element 41 and the second switching element 51.
  • a first switching element 171 and a second switching element 181 instead of the first switching element 41 and the second switching element 51.
  • FIG. 12 shows a schematic planar structure of the semiconductor light-emitting device 10 of the third embodiment.
  • FIG. 13 shows a schematic back surface structure of the semiconductor light-emitting device 10 of FIG. 12.
  • FIG. 14 shows a schematic cross-sectional structure of the semiconductor light-emitting device 10 taken along line F14-F14 in FIG. 12.
  • FIG. 15 shows a schematic cross-sectional structure of the semiconductor light-emitting device 10 taken along line F15-F15 in FIG. 12.
  • the double-dashed line frames shown in FIGS. 12 and 13 indicate openings formed in the front resist 29A and the back resist 29B (see FIG. 14).
  • the semiconductor light-emitting device 10 of the third embodiment includes a first drive circuit 40 and a second drive circuit 50, similar to the first embodiment.
  • the circuit configuration of the semiconductor light-emitting device 10 is similar to that of the first embodiment.
  • the first drive circuit 40 includes a first switching element 171 and a plurality of first capacitors 42 (six in the third embodiment).
  • the second drive circuit 50 includes a second switching element 181 and a plurality of second capacitors 52 (six in the third embodiment).
  • the first switching element 171 and the second switching element 181 are horizontal transistors.
  • the first switching element 171 and the second switching element 181 are transistors formed of a nitride semiconductor (e.g., gallium nitride (GaN)).
  • a nitride semiconductor e.g., gallium nitride (GaN)
  • HEMT high electron mobility transistor
  • the first switching element 171 and the second switching element 181 may be MOSFETs as long as they are horizontal transistors.
  • the substrate 20 does not include a front-side intermediate electrode 28C (see FIG. 4) and a back-side intermediate electrode 28D (see FIG. 3).
  • the substrate 20 includes one base material 27, a front-side electrode 28A, and a back-side electrode 28B.
  • the configurations of the front-side electrode 28A and the back-side electrode 28B are different from those of the first embodiment. The detailed configurations of the front-side electrode 28A and the back-side electrode 28B are described below.
  • Surface electrode 28A is formed on the substrate surface (substrate surface 21) of one substrate 27.
  • Surface electrode 28A includes first surface electrodes 191A, 191B, second surface electrodes 192A, 192B, 192C, 192D, third surface electrodes 193A, 193B, and fourth surface electrodes 194A, 194B.
  • the first surface electrode 191A and the first surface electrode 191B are arranged at both ends of the substrate surface 21 in the Y direction.
  • the first surface electrode 191A is an electrode on which the semiconductor light emitting element 30 is mounted.
  • the first surface electrode 191A is an electrode that is electrically connected to the element back surface electrode 35 (see FIG. 14), which serves as the cathode of the semiconductor light emitting element 30.
  • the first surface electrode 191B is an electrode that is electrically connected to the first surface electrode 191A.
  • the first surface electrode 191A is an electrode extending in the X direction at a position adjacent to the third substrate side surface 25 in the Y direction.
  • the first surface electrode 191A is formed over substantially the entire substrate surface 21 in the X direction.
  • the maximum dimension in the Y direction of the first surface electrode 191A is equal to or greater than 1/4 of the dimension in the Y direction of the substrate surface 21.
  • the maximum dimension in the Y direction of the first surface electrode 191A is smaller than 1/3 of the dimension in the Y direction of the substrate surface 21.
  • the end closer to the fourth substrate side surface 26 includes a recess 191AA that is recessed toward the third substrate side surface 25 at its center in the X direction.
  • the shape of the recess 191AA in a plan view is a rectangular recess.
  • the dimension in the X direction of the recess 191AA is greater than 1/2 the dimension in the X direction of the substrate surface 21.
  • the dimension in the X direction of the recess 191AA is smaller than 3/4 the dimension in the X direction of the substrate surface 21.
  • the dimension in the X direction of the recess 191AA can be defined by the distance in the X direction between the side surfaces at both ends in the X direction that make up the recess 191AA.
  • the first surface electrode 191B extends in the X direction at a position adjacent to the fourth substrate side surface 26 in the Y direction.
  • the first surface electrode 191B is formed over substantially the entire substrate surface 21 in the X direction.
  • the maximum dimension in the Y direction of the first surface electrode 191B is smaller than the maximum dimension in the Y direction of the first surface electrode 191A.
  • the maximum dimension in the Y direction of the first surface electrode 191B is larger than 1/2 the maximum dimension in the Y direction of the first surface electrode 191A.
  • the end closer to the third substrate side surface 25 includes a recess 191BA that is recessed in the center in the X direction toward the fourth substrate side surface 26.
  • the shape of the recess 191BA in a plan view is a rectangular recess.
  • the dimension in the X direction of the recess 191BA is greater than the dimension in the X direction of the recess 191AA.
  • the dimension in the X direction of the recess 191BA can be defined by the distance in the X direction between the side surfaces at both ends in the X direction that make up the recess 191BA.
  • Second surface electrodes 192A, 192B, 192C, and 192D, third surface electrodes 193A and 193B, and fourth surface electrodes 194A and 194B are arranged between first surface electrode 191A and first surface electrode 191B in the Y direction.
  • the second surface electrodes 192A, 192C, the third surface electrode 193A, the fourth surface electrode 194A, and the first surface electrode 191B are electrodes electrically connected to the first drive circuit 40.
  • the second surface electrodes 192B, 192D, the third surface electrode 193B, the fourth surface electrode 194B, and the first surface electrode 191B are electrodes electrically connected to the second drive circuit 50.
  • the second surface electrodes 192A, 192C, the third surface electrode 193A, and the fourth surface electrode 194A are disposed closer to the first substrate side surface 23 than the imaginary center line VC, and the second surface electrodes 192B, 192D, the third surface electrode 193B, and the fourth surface electrode 194B are disposed closer to the second substrate side surface 24 than the imaginary center line VC.
  • the second surface electrode 192A is an electrode that is electrically connected to the drain electrode 171D of the first switching element 171 of the first drive circuit 40.
  • the second surface electrode 192C is an electrode that is electrically connected to the second surface electrode 192A.
  • the second surface electrode 192B is an electrode that is electrically connected to the drain electrode 181D of the second switching element 181 of the second drive circuit 50.
  • the second surface electrode 192D is an electrode that is electrically connected to the second surface electrode 192B.
  • Each second surface electrode 192A is formed in an elliptical shape extending in the Y direction.
  • the multiple second surface electrodes 192A are arranged at the same position in the Y direction and spaced apart from each other in the X direction.
  • the multiple second surface electrodes 192A are arranged closer to the virtual center line VC in the X direction between the virtual center line VC and the first substrate side surface 23.
  • each second surface electrode 192B there are multiple second surface electrodes 192B (three in the third embodiment).
  • the shape and size of each second surface electrode 192B are the same as the second surface electrode 192A.
  • the multiple second surface electrodes 192B are in a line-symmetric relationship with the multiple second surface electrodes 192A with respect to the virtual center line VC.
  • Each of the second surface electrodes 192A, 192B is disposed between the first surface electrodes 191A and 191B, closer to the first surface electrode 191A in the Y direction.
  • the end of each of the second surface electrodes 192A, 192B closer to the first surface electrode 191A in the Y direction is disposed within the recess 191AA in the Y direction.
  • the second surface electrodes 192C and 192D are disposed closer to the fourth substrate side surface 26 than the second surface electrodes 192A and 192B in the Y direction.
  • the second surface electrode 192C is formed in a rectangular shape with the X direction being the longitudinal direction and the Y direction being the lateral direction in a plan view.
  • the dimension in the X direction of the second surface electrode 192C is larger than 1/3 of the dimension in the X direction of the substrate surface 21 and smaller than 1/2 of the dimension in the X direction of the substrate surface 21.
  • the end closer to the first substrate side surface 23 is disposed closer to the first substrate side surface 23 than the second surface electrode 192A closest to the first substrate side surface 23 among the multiple second surface electrodes 192A.
  • the second surface electrode 192D is in a line-symmetrical relationship with the multiple second surface electrodes 192C with respect to the imaginary center line VC. Of both ends in the X direction of the second surface electrode 192D, the end closer to the second substrate side surface 24 is disposed closer to the second substrate side surface 24 than the second surface electrode 192B, which is closest to the second substrate side surface 24, among the multiple second surface electrodes 192B.
  • the second surface electrodes 192C and 192D are The second surface electrodes 192C and 192D are disposed within the recess 191BA in the X direction. Parts of the second surface electrodes 192C and 192D in the Y direction are disposed within the recess 191BA in the Y direction.
  • the third surface electrode 193A is an electrode electrically connected to the source electrode 171S of the first switching element 171.
  • the third surface electrode 193B is an electrode electrically connected to the source electrode 181S of the second switching element 181.
  • the fourth surface electrode 194A is an electrode electrically connected to the gate electrode 171G of the first switching element 171.
  • the fourth surface electrode 194B is an electrode electrically connected to the gate electrode 181G of the second switching element 181.
  • the third surface electrodes 193A and 193B are disposed between the first surface electrode 191A and the second surface electrodes 192C and 192D in the Y direction.
  • the third surface electrode 193A is formed so as to surround the second surface electrodes 192A in a plan view. Of both ends of the third surface electrode 193A in the Y direction, the end closer to the first surface electrode 191A is disposed within the recess 191AA. This end is disposed closer to the first surface electrode 191A than the second surface electrodes 192A.
  • a recess 193AA facing the recess 191BA is formed at the end of the third surface electrode 193A in the Y direction that is closer to the first surface electrode 191B.
  • a part of the second surface electrode 192C in the Y direction is disposed in the recess 193AA.
  • the third surface electrode 193A includes a detour portion 193AB that surrounds the fourth surface electrode 194A.
  • the detour portion 193AB detours around the fourth surface electrode 194A and faces the second surface electrode 192A in the X direction at a position closer to the first surface electrode 191A than the fourth surface electrode 194A in the Y direction.
  • the fourth surface electrode 194A is disposed closer to the first substrate side surface 23 than the multiple second surface electrodes 192A in the X direction.
  • the fourth surface electrode 194A is disposed in a position facing the portion of the second surface electrode 192A closer to the third surface electrode 193A in the X direction.
  • the fourth surface electrode 194A is disposed in an area surrounded by the second surface electrode 192A and the detour portion 193AB.
  • the fourth surface electrode 194A is formed in a rectangular shape with the X direction as the long side and the Y direction as the short side.
  • the third surface electrode 193B is formed so as to surround the multiple second surface electrodes 192B in a plan view.
  • the third surface electrode 193B has a shape that is different from the line symmetric shape of the third surface electrode 193A with respect to the imaginary center line VC.
  • the end closer to the first surface electrode 191A is disposed within the recess 191AA. This end is disposed closer to the first surface electrode 191A than the multiple second surface electrodes 192B.
  • a recess 193BA facing recess 191BA is formed at the end of third surface electrode 193B in the Y direction closer to first surface electrode 191B.
  • a portion of second surface electrode 192D in the Y direction is disposed in recess 193BA.
  • second surface electrodes 192C and 192D are disposed within the area surrounded by recess 191BA, recess 193AA, and recess 193BA in a plan view.
  • the fourth surface electrode 194B is disposed closer to the second substrate side surface 24 than the multiple second surface electrodes 192B in the X direction.
  • the fourth surface electrode 194B is disposed at a position facing the portion of the second surface electrode 192B closer to the first surface electrode 191A in the X direction.
  • the fourth surface electrode 194B is disposed closer to the first surface electrode 191A in the Y direction than a position that is linearly symmetrical to the fourth surface electrode 194A about the imaginary center line VC.
  • the fourth surface electrode 194B is formed in a rectangular shape with the long side in the X direction and the short side in the Y direction.
  • the dimension in the X direction of the fourth surface electrode 194B is greater than the dimension in the X direction of the fourth surface electrode 194A.
  • the back electrode 28B is formed on the back surface (substrate back surface 22) of one substrate 27.
  • the back electrode 28B includes a first back electrode 201, second back electrodes 202A, 202B, 202C, 202D, third back electrodes 203A, 203B, and fourth back electrodes 204A, 204B.
  • the first back surface electrode 201 is an electrode electrically connected to the first surface electrodes 191A and 191B (see FIG. 12).
  • the first back surface electrode 201 is disposed at a position overlapping the first surface electrodes 191A and 191B in a plan view.
  • the area of the first back surface electrode 201 is larger than the area of each of the second back surface electrodes 202A, 202B, 202C, and 202D, the third back surface electrodes 203A and 203B, and the fourth back surface electrodes 204A and 204B.
  • the area of the first back surface electrode 201 is larger than the total area of the third back surface electrodes 203A and 203B, and the fourth back surface electrodes 204A and 204B.
  • the first back surface electrode 201 is formed over most of the back surface 22 of the substrate.
  • the first back electrode 201 includes two recesses 201A, 201B recessed in the X direction.
  • the recess 201A is provided at the end of the first back electrode 201 in the X direction that is closer to the first substrate side surface 23.
  • the recess 201A is recessed from this end toward the second substrate side surface 24.
  • the recess 201B is provided at the end of the first back electrode 201 in the X direction that is closer to the second substrate side surface 24.
  • the recess 201B is recessed from this end toward the first substrate side surface 23.
  • the recesses 201A, 201B are formed in a rectangular recess with the Y direction as the long side and the X direction as the short side in a plan view.
  • the recesses 201A, 201B are formed between the third substrate side surface 25 and the fourth substrate side surface 26 in the Y direction, closer to the fourth substrate side surface 26.
  • the Y-direction dimension of the recesses 201A and 201B is approximately half the Y-direction dimension of the rear surface 22 of the substrate.
  • the Y-direction dimension of the recesses 201A and 201B can be defined as the distance between the Y-direction sides of both ends of the recesses 201A and 201B in the Y direction.
  • the first back surface electrode 201 has a plurality of first openings 201C and a plurality of second openings 201D.
  • Each of the first openings 201C and second openings 201D has an elliptical shape with the Y direction being the longitudinal direction in a plan view and the X direction being the lateral direction.
  • Each of the first openings 201C and second openings 201D are the same size.
  • the Y direction dimension of each of the first openings 201C and second openings 201D is slightly smaller than the Y direction dimension of the recesses 201A, 201B.
  • the multiple first openings 201C are arranged closer to the first substrate side surface 23 than the imaginary center line VC in the X direction.
  • the multiple first openings 201C are arranged at the same positions as each other in the Y direction and spaced apart from each other in the X direction.
  • the multiple second openings 201D are arranged closer to the second substrate side surface 24 than the imaginary center line VC in the X direction.
  • the multiple second openings 201D are arranged at the same position in the Y direction and spaced apart from each other in the X direction.
  • the positions in the Y direction of the multiple second openings 201D are the same as the positions in the Y direction of the multiple first openings 201C.
  • the multiple second openings 201D are arranged in positions that are linearly symmetrical to the multiple first openings 201C with respect to the imaginary center line VC.
  • Each first opening 201C and each second opening 201D is disposed between the recesses 201A and 201B in the X direction.
  • Each first opening 201C and each second opening 201D is disposed closer to the third substrate side surface 25 than the recesses 201A and 201B in the Y direction. Therefore, of both ends of each first opening 201C and each second opening 201D in the Y direction, the end closer to the third substrate side surface 25 is disposed closer to the third substrate side surface 25 than the recesses 201A and 201B.
  • the second back surface electrodes 202A are provided in a number corresponding to the number of the first openings 201C (three in the third embodiment).
  • the second back surface electrodes 202A are electrodes that are individually and electrically connected to the second surface electrodes 192A (see FIG. 12).
  • the second back surface electrodes 202A are electrodes that are electrically connected to the second surface electrodes 192C (see FIG. 12). For this reason, it can be said that the second back surface electrodes 202A are electrically connected to each other.
  • the second back surface electrodes 202A are arranged at positions that individually overlap the second surface electrodes 192A in a plan view.
  • Each second back surface electrode 202A is formed in an elliptical shape with the Y direction as the long side and the X direction as the short side.
  • the Y direction length of each second back surface electrode 202A is longer than the Y direction length of each second surface electrode 192A.
  • the multiple second back surface electrodes 202A extend in the Y direction so as to overlap with the second surface electrodes 192C in a planar view.
  • each second back surface electrode 202A is formed to be long enough to overlap with both the second surface electrodes 192A and the second surface electrodes 192C in a planar view.
  • the second back surface electrodes 202B are provided in a number corresponding to the number of the second openings 201D (three in the third embodiment).
  • the second back surface electrodes 202B are electrodes that are individually and electrically connected to the second surface electrodes 192B (see FIG. 12).
  • the second back surface electrodes 202B are electrodes that are electrically connected to the second surface electrodes 192D (see FIG. 12). For this reason, it can be said that the second back surface electrodes 202B are electrically connected to each other.
  • the second back surface electrodes 202B are arranged in positions that individually overlap the second surface electrodes 192B in a plan view.
  • Each second back surface electrode 202B is formed in an elliptical shape with the Y direction as the long side and the X direction as the short side.
  • the Y direction length of each second back surface electrode 202B is longer than the Y direction length of each second surface electrode 192B.
  • the multiple second back surface electrodes 202B extend in the Y direction so as to overlap with the second surface electrode 192D in a planar view.
  • each second back surface electrode 202B is formed to a length that overlaps both the second surface electrode 192B and the second surface electrode 192D in a planar view.
  • the size of each second back surface electrode 202B is the same as the size of each second back surface electrode 202A.
  • a second back surface electrode 202C, a third back surface electrode 203A, and a fourth back surface electrode 204A are arranged in the recess 201A.
  • a second back surface electrode 202D, a third back surface electrode 203B, and a fourth back surface electrode 204B are arranged in the recess 201B.
  • a second back surface electrode 202A is arranged in each first opening 201C.
  • a second back surface electrode 202B is arranged.
  • the second back surface electrode 202C is an electrode electrically connected to the second surface electrode 192C (see FIG. 12). Therefore, it can be said that the second back surface electrode 202C is electrically connected to the second back surface electrode 202A.
  • the second back surface electrode 202C is arranged closer to the fourth substrate side surface 26 than the third back surface electrode 203A and the fourth back surface electrode 204A.
  • the second back surface electrode 202C is arranged at a position overlapping with the second surface electrode 192C in a plan view.
  • the second back surface electrode 202C is formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the third back surface electrode 203A is an electrode electrically connected to the third surface electrode 193A (see FIG. 12).
  • the third back surface electrode 203A is disposed between the second back surface electrode 202C and the fourth back surface electrode 204A in the Y direction.
  • the third back surface electrode 203A is disposed at a position overlapping the third surface electrode 193A in a plan view.
  • a recess is formed in one of the four corners of the third back surface electrode 203A, the corner closest to the second substrate side surface 24 and the third substrate side surface 25.
  • the fourth back surface electrode 204A is disposed in the recessed portion.
  • the fourth back surface electrode 204A is an electrode that is electrically connected to the fourth surface electrode 194A.
  • the fourth back surface electrode 204A is disposed at a position that overlaps with the fourth surface electrode 194A in a plan view.
  • the fourth back surface electrode 204A is formed in an L-shape in a plan view.
  • the second back surface electrode 202D is an electrode electrically connected to the second surface electrode 192D (see FIG. 12). Therefore, it can be said that the second back surface electrode 202D is electrically connected to the second back surface electrode 202B.
  • the second back surface electrode 202D is arranged at a position overlapping the second surface electrode 192D in a plan view.
  • the second back surface electrode 202D is arranged closer to the fourth substrate side surface 26 than the third back surface electrode 203B and the fourth back surface electrode 204B.
  • the second back surface electrode 202D is formed in a rectangular shape with the X direction as the long side direction and the Y direction as the short side direction in a plan view.
  • the shape and size of the second back surface electrode 202D are the same as those of the second back surface electrode 202C.
  • the third back surface electrode 203B is an electrode electrically connected to the third surface electrode 193B (see FIG. 12).
  • the third back surface electrode 203B is disposed between the second back surface electrode 202D and the fourth back surface electrode 204B in the Y direction.
  • the third back surface electrode 203B is disposed at a position overlapping with the third surface electrode 193B in a plan view.
  • the third back surface electrode 203B is formed in a rectangular shape with the X direction as the long side direction and the Y direction as the short side direction in a plan view.
  • the dimension of the third back surface electrode 203B in the Y direction is larger than the dimension of the second back surface electrode 202D in the Y direction.
  • the fourth back surface electrode 204B is an electrode electrically connected to the fourth surface electrode 194B (see FIG. 12).
  • the fourth back surface electrode 204B is disposed at a position overlapping with the fourth surface electrode 194B in a plan view.
  • the fourth back surface electrode 204B is formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the Y direction dimension of the fourth back surface electrode 204B is smaller than the Y direction dimension of the second back surface electrode 202D.
  • the substrate 20 includes first vias 211A, 211B, 211C, second vias 212A, 212B, third vias 213A, 213B, and fourth vias 214A, 214B.
  • the first vias 211A, 211B, 211C, second vias 212A, 212B, third vias 213A, 213B, and fourth vias 214A, 214B penetrate the base material 27 in the Z direction.
  • the first vias 211A, 211B, 211C, second vias 212A, 212B, third vias 213A, 213B, and fourth vias 214A, 214B are formed from a material including one or more appropriately selected from the group consisting of Ti, TiN, Au, Ag, Cu, Al, and W.
  • the first vias 211A, 211B, and 211C are each provided in multiple numbers.
  • the first via 211A is electrically connected to the first surface electrode 191A and the first back surface electrode 201. This electrically connects the first surface electrode 191A and the first back surface electrode 201 to each other.
  • the first vias 211B and 211C are electrically connected to the first surface electrode 191B and the first back surface electrode 201. This electrically connects the first surface electrode 191B and the first back surface electrode 201 to each other. In this way, the first surface electrode 191A and the first surface electrode 191B are electrically connected to each other via the first via 211A, the first back surface electrode 201, and the first vias 211B and 211C.
  • the multiple first vias 211A are arranged in the center of the first surface electrode 191A in the X direction and closer to the third substrate side surface 25 of the first surface electrode 191A in the Y direction.
  • the multiple first vias 211A are arranged at a distance from each other in the X and Y directions.
  • the number of first vias 211A arranged in the X direction is greater than the number of first vias 211A arranged in the Y direction.
  • the area in which the multiple first vias 211A are formed is larger than the area of the semiconductor light-emitting element 30. Therefore, some of the multiple first vias 211A are provided outside the semiconductor light-emitting element 30 in a planar view.
  • the multiple first vias 211B are arranged in the X direction on the first surface electrode 191B closer to the first substrate side surface 23 than the imaginary center line VC.
  • the multiple first vias 211B are arranged in the Y direction on the first surface electrode 191B closer to the fourth substrate side surface 26.
  • the multiple first vias 211B are arranged at a distance from each other in the X and Y directions.
  • the number of first vias 211B arranged in the X direction is greater than the number of first vias 211B arranged in the Y direction.
  • the multiple first vias 211C are arranged in the X direction on the first surface electrode 191B closer to the second substrate side surface 24 than the imaginary center line VC.
  • the multiple first vias 211C are arranged in the Y direction on the first surface electrode 191B closer to the fourth substrate side surface 26.
  • the multiple first vias 211C are arranged at a distance from each other in the X and Y directions.
  • the number of first vias 211C arranged in the X direction is greater than the number of first vias 211C arranged in the Y direction. In one example, the number and arrangement of the multiple first vias 211C are the same as those of the first vias 211B.
  • the second vias 212A are provided in a plurality. Some of the second vias 212A are individually electrically connected to the second surface electrodes 192A and the second back surface electrodes 202A. As a result, the second surface electrodes 192A and the second back surface electrodes 202A are individually electrically connected. Another part of the second vias 212A is electrically connected to the second surface electrode 192C and the second back surface electrodes 202A. As a result, the second surface electrode 192C and the second back surface electrodes 202A are electrically connected to each other. In this way, the second surface electrodes 192A and the second surface electrode 192C are electrically connected via the second vias 212A and the second back surface electrodes 202A. Another part of the second vias 212A is electrically connected to the second surface electrode 192C and the second back surface electrode 202C. This electrically connects the second surface electrode 192C and the second back surface electrode 202C to each other.
  • a plurality of second vias 212B are provided. Some of the plurality of second vias 212B are individually electrically connected to the plurality of second surface electrodes 192B and the plurality of second back surface electrodes 202B. As a result, the plurality of second surface electrodes 192B and the plurality of second back surface electrodes 202B are individually electrically connected. In addition, another portion of the plurality of second vias 212B is electrically connected to the second surface electrode 192D and the plurality of second back surface electrodes 202B. As a result, the second surface electrode 192D and the plurality of second back surface electrodes 202B are electrically connected to each other.
  • the plurality of second surface electrodes 192B and the second surface electrode 192D are electrically connected via the second vias 212B and the plurality of second back surface electrodes 202B.
  • yet another portion of the plurality of second vias 212B is electrically connected to the second surface electrode 192D and the second back surface electrode 202D. This electrically connects the second surface electrode 192D and the second back surface electrode 202D to each other.
  • the third vias 213A are electrically connected to the third surface electrode 193A and the third back surface electrode 203A. This electrically connects the third surface electrode 193A and the third back surface electrode 203A to each other.
  • the third vias 213B are electrically connected to the third surface electrode 193B and the third back surface electrode 203B. This electrically connects the third surface electrode 193B and the third back surface electrode 203B to each other.
  • the fourth via 214A is electrically connected to the fourth surface electrode 194A and the fourth back surface electrode 204A. This electrically connects the fourth surface electrode 194A and the fourth back surface electrode 204A to each other.
  • One fourth via 214B is provided.
  • the fourth via 214B is electrically connected to the fourth surface electrode 194B and the fourth back surface electrode 204B. This electrically connects the fourth surface electrode 194B and the fourth back surface electrode 204B to each other.
  • the semiconductor light emitting element 30, the first drive circuit 40, and the second drive circuit 50 are mounted on the multiple surface electrodes 28A.
  • the semiconductor light emitting element 30, the first drive circuit 40, and the second drive circuit 50 will be described below. Note that components common to the first embodiment are given the same reference numerals, and descriptions thereof may be omitted.
  • the semiconductor light-emitting element 30 is mounted on the first surface electrode 191A. More specifically, as shown in FIG. 14, the semiconductor light-emitting element 30 is joined to the first surface electrode 191A by a conductive bonding material SD. As shown in FIG. 12, the semiconductor light-emitting element 30 is disposed in the center of the first surface electrode 191A in the X direction and in the portion of the first surface electrode 191A closer to the third substrate side surface 25 in the Y direction.
  • the semiconductor light emitting element 30 includes a plurality of (eight in the third embodiment) light emitting portions 33.
  • the plurality of light emitting portions 33 are arranged in the X direction. More specifically, four light emitting portions 33 are arranged on each side of the virtual center line VC.
  • first light emitting portion 33A each of the four light emitting portions 33 closer to the first substrate side surface 23 than the virtual center line VC
  • second light emitting portion 33B each of the four light emitting portions 33 closer to the second substrate side surface 24 than the virtual center line VC.
  • the semiconductor light emitting element 30 includes a plurality of (four in the third embodiment) first element surface electrodes 34A corresponding to the first light emitting portions 33A, and a plurality of (four in the third embodiment) second element surface electrodes 34B corresponding to the second light emitting portions 33B.
  • the first element surface electrode 34A is an example of a "first anode electrode of the semiconductor light emitting element”
  • the second element surface electrode 34B is an example of a "second anode electrode of the semiconductor light emitting element”.
  • the multiple first element surface electrodes 34A and the third surface electrode 193A are electrically connected by multiple wires W5.
  • the multiple wires W5 are individually electrically connected to the multiple first element surface electrodes 34A. Meanwhile, the multiple wires W5 are electrically connected to the third surface electrode 193A. Therefore, each of the multiple first element surface electrodes 34A is electrically connected to the third surface electrode 193A.
  • the multiple wires W5 are connected to a portion of the third surface electrode 193A that is disposed within the recess 191AA of the first surface electrode 191A.
  • the multiple wires W5 individually connected to the multiple first element surface electrodes 34A are formed to have approximately equal lengths in a planar view, for example.
  • the second element surface electrodes 34B and the third surface electrode 193B are electrically connected by wires W5.
  • the wires W5 are individually electrically connected to the second element surface electrodes 34B. Meanwhile, the wires W5 are electrically connected to the third surface electrode 193B. Therefore, each of the second element surface electrodes 34B is electrically connected to the third surface electrode 193B.
  • the wires W5 are connected to a portion of the third surface electrode 193B that is disposed within the recess 191AA of the first surface electrode 191A.
  • the wires W5 individually connected to the second element surface electrodes 34B are formed to have approximately equal lengths in a plan view, for example.
  • the total length of the multiple wires W5 individually connected to the multiple first element surface electrodes 34A is equal to the total length of the multiple wires W5 individually connected to the multiple second element surface electrodes 34B.
  • the difference between the total length of the multiple wires W5 individually connected to the multiple first element surface electrodes 34A and the total length of the multiple wires W5 individually connected to the multiple second element surface electrodes 34B in a planar view is, for example, within 10% of the total length of the multiple wires W5 individually connected to the multiple first element surface electrodes 34A, it can be said that the total length of the multiple wires W5 individually connected to the multiple first element surface electrodes 34A is equal to the total length of the multiple wires W5 individually connected to the multiple second element surface electrodes 34B in a planar view.
  • the first switching element 171 is disposed at a position overlapping with the second surface electrodes 192A, the third surface electrodes 193A, and the fourth surface electrodes 194A in a plan view.
  • the first switching element 171 is disposed closer to the fourth substrate side surface 26 than the wires W5 in the Y direction.
  • the first switching element 171 is disposed closer to the third substrate side surface 25 than the second surface electrodes 192C in the Y direction.
  • the first switching element 171 is disposed closer to the virtual center line VC between the virtual center line VC and the first substrate side surface 23 in the X direction.
  • the first switching element 171 includes a portion that overlaps with the first light-emitting portion 33A of the semiconductor light-emitting element 30 when viewed from the Y direction.
  • the first switching element 171 is formed in a rectangular flat plate shape with the thickness direction being the Z direction.
  • the first switching element 171 is formed in a rectangular shape with the X direction being the longitudinal direction and the Y direction being the lateral direction when viewed from a plan view.
  • the first switching element 171 has a second element front surface 171A and a second element back surface 171B that face opposite each other in the Z direction.
  • the second element front surface 171A faces the same side as the substrate front surface 21, and the second element back surface 171B faces the same side as the substrate back surface 22.
  • the first switching element 171 includes a plurality of drain electrodes 171D (three in the third embodiment), a plurality of source electrodes 171S (four in the third embodiment), and a gate electrode 171G.
  • Each of the multiple drain electrodes 171D, the multiple source electrodes 171S, and the gate electrode 171G is formed on the second element back surface 171B of the first switching element 171.
  • Each of the drain electrodes 171D, each of the source electrodes 171S, and the gate electrode 171G is formed in a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction.
  • the second element back surface is an example of the "back surface of the first switching element”.
  • the multiple drain electrodes 171D are arranged at a distance from each other in the X direction.
  • the multiple source electrodes 171S are arranged at a distance from each other in the X direction.
  • the source electrode 171S closest to the first substrate side surface 23 is formed so that its length in the Y direction is shorter than the other source electrodes 171S.
  • the length in the Y direction of the other source electrodes 171S is equal to the length in the Y direction of the drain electrode 171D.
  • the multiple drain electrodes 171D and the multiple source electrodes 171S are arranged alternately one by one in the X direction.
  • the source electrode 171S, the drain electrode 171D, the source electrode 171S, the drain electrode 171D, the source electrode 171S, the drain electrode 171D, the source electrode 171S, the drain electrode 171D, the source electrode 171S, the drain electrode 171D, and the source electrode 171S are arranged in this order from the end of the second element back surface 171B closest to the first substrate side surface 23 to the end closest to the second substrate side surface 24. Therefore, both ends of the second element back surface 171B in the X direction become the source electrodes 171S.
  • the gate electrode 171G is arranged at the end of the second element back surface 171B closest to the first substrate side surface 23.
  • the gate electrode 171G and the source electrode 171S closest to the first substrate side surface 23 are arranged at a distance from each other in the Y direction.
  • the gate electrode 171G is arranged closer to the fourth substrate side surface 26 than the source electrode 171S closest to the first substrate side surface 23.
  • the length of the gate electrode 171G in the Y direction is shorter than the length of the drain electrode 171D. In one example, the length of the gate electrode 171G in the Y direction is equal to the length of the source electrode 171S closest to the first substrate side surface 23 in the Y direction.
  • the multiple drain electrodes 171D are arranged at positions that individually overlap the multiple second surface electrodes 192A in a plan view. As shown in FIG. 15, the multiple drain electrodes 171D are individually bonded to the multiple second surface electrodes 192A by a conductive bonding material SD. As a result, the multiple drain electrodes 171D are individually electrically connected to the multiple second surface electrodes 192A.
  • Each of the multiple source electrodes 171S is disposed at a position overlapping the third surface electrode 193A. As shown in FIG. 15, the multiple source electrodes 171S are joined to the third surface electrode 193A by a conductive bonding material SD. As a result, the multiple source electrodes 171S are electrically connected to the third surface electrode 193A.
  • the gate electrode 171G is disposed at a position overlapping the fourth surface electrode 194A.
  • the gate electrode 171G is joined to the fourth surface electrode 194A by a conductive bonding material SD (not shown). As a result, the gate electrode 171G is electrically connected to the fourth surface electrode 194A.
  • a plurality of first capacitors 42 (six in the third embodiment) are provided.
  • the plurality of first capacitors 42 are connected in parallel with each other.
  • the plurality of first capacitors 42 are arranged at a distance from each other in the X direction.
  • Each first capacitor 42 is arranged so as to straddle the second surface electrode 192C and the first surface electrode 191B in the Y direction.
  • Each first capacitor 42 is mounted on the second surface electrode 192C and the first surface electrode 191B. More specifically, as shown in FIG. 14, each first capacitor 42 is individually bonded to the second surface electrode 192C and the first surface electrode 191B by a conductive bonding material SD.
  • the first electrode 42A of each first capacitor 42 is bonded to the second surface electrode 192C.
  • the second electrode 42B of each first capacitor 42 is bonded to the first surface electrode 191B.
  • the first electrode 42A is electrically connected to the second surface electrode 192C
  • the second electrode 42B is electrically connected to the first surface electrode 191B.
  • the multiple first capacitors 42 are arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the first switching element 171 in the Y direction.
  • the first switching element 171 is arranged between the semiconductor light-emitting element 30 and the multiple first capacitors 42 in the Y direction.
  • the multiple first capacitors 42 are arranged in a position that overlaps with the first switching element 171.
  • the first electrode 42A of each first capacitor 42 is electrically connected to the multiple drain electrodes 171D of the first switching element 171.
  • the multiple source electrodes 171S of the first switching element 171 are electrically connected to the multiple first element surface electrodes 34A via the third surface electrode 193A and multiple wires W5. Since the first element surface electrode 34A constitutes the first anode electrode of the semiconductor light emitting element 30, it can be said that the first anode electrode is electrically connected to the source electrode 171S of the first switching element 171.
  • the second switching element 181 is disposed at a position overlapping with the second surface electrodes 192B, the third surface electrode 193B, and the fourth surface electrode 194B in a plan view.
  • the second switching element 181 is disposed closer to the fourth substrate side surface 26 than the wires W5 in the Y direction.
  • the second switching element 181 is disposed closer to the third substrate side surface 25 than the second surface electrode 192D in the Y direction.
  • the second switching element 181 is disposed closer to the virtual center line VC between the virtual center line VC and the second substrate side surface 24 in the X direction.
  • the second switching element 181 includes a portion that overlaps with the second light-emitting portion 33B when viewed from the Y direction.
  • the second switching element 181 is formed in a rectangular flat plate shape with the thickness direction being the Z direction.
  • the second switching element 181 is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view.
  • the shape and size of the second switching element 181 are the same as those of the first switching element 171.
  • the distance D1 between the semiconductor light-emitting element 30 and the first switching element 171 in the Y direction is equal to the distance D2 between the semiconductor light-emitting element 30 and the second switching element 181 in the Y direction.
  • the difference between the distances D1 and D2 is, for example, within 10% of the distance D1, then it can be said that the distance D1 is equal to the distance D2.
  • the second switching element 181 includes a second element front surface 181A and a second element back surface 181B that face opposite each other in the Z direction.
  • the second element front surface 181A faces the same side as the substrate front surface 21, and the second element back surface 181B faces the same side as the substrate back surface 22.
  • the second switching element 181 has a plurality of drain electrodes 181D (three in the third embodiment), a plurality of source electrodes 181S (four in the third embodiment), and a gate electrode 181G formed thereon.
  • Each of the plurality of drain electrodes 181D, the plurality of source electrodes 181S, and the gate electrode 181G is formed on the second element back surface 181B.
  • Each of the drain electrodes 181D, each of the source electrodes 181S, and the gate electrode 181G is formed in a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction.
  • the second element back surface 181B is an example of the "back surface of the second switching element”.
  • the multiple drain electrodes 181D are arranged at a distance from each other in the X direction.
  • the multiple source electrodes 181S are arranged at a distance from each other in the X direction.
  • the source electrode 181S closest to the second substrate side surface 24 is formed so that its length in the Y direction is shorter than the other source electrodes 181S.
  • the length in the Y direction of this other source electrode 181S is equal to the length in the Y direction of the drain electrode 181D.
  • the multiple drain electrodes 181D and the multiple source electrodes 181S are arranged alternately one by one in the X direction.
  • the source electrode 181S, the drain electrode 181D, the source electrode 181S, the drain electrode 181D, the source electrode 181S, the drain electrode 181D, the source electrode 181S, the drain electrode 181D, the source electrode 181S, the drain electrode 181D, and the source electrode 181S are arranged in this order from the end of the second element back surface 181B closest to the second substrate side surface 24 to the end closest to the first substrate side surface 23. Therefore, both ends of the second element back surface 181B in the X direction become the source electrodes 181S.
  • the gate electrode 181G is arranged at the end of the second element back surface 181B closest to the second substrate side surface 24.
  • the gate electrode 181G and the source electrode 181S closest to the second substrate side surface 24 are arranged at a distance from each other in the Y direction.
  • the gate electrode 181G is arranged closer to the third substrate side surface 25 than the source electrode 181S closest to the second substrate side surface 24.
  • the length of the gate electrode 181G in the Y direction is shorter than the length of the drain electrode 181D. In one example, the length of the gate electrode 181G in the Y direction is equal to the length of the source electrode 181S closest to the second substrate side surface 24 in the Y direction.
  • the multiple drain electrodes 181D are disposed at positions that individually overlap the multiple second surface electrodes 192B in a plan view. As shown in FIG. 15, the multiple drain electrodes 181D are individually bonded to the multiple second surface electrodes 192B by a conductive bonding material SD. As a result, the multiple drain electrodes 181D are individually electrically connected to the multiple second surface electrodes 192B.
  • Each of the multiple source electrodes 181S is disposed at a position overlapping the third surface electrode 193B. As shown in FIG. 15, the multiple source electrodes 181S are joined to the third surface electrode 193B by a conductive bonding material SD. As a result, the multiple source electrodes 181S are electrically connected to the third surface electrode 193B.
  • the gate electrode 181G is disposed at a position overlapping the fourth surface electrode 194B.
  • the gate electrode 181G is joined to the fourth surface electrode 194B by a conductive bonding material SD.
  • the gate electrode 181G is electrically connected to the fourth surface electrode 194B.
  • a plurality of second capacitors 52 are provided.
  • the plurality of second capacitors 52 are arranged at a distance from each other in the X direction.
  • Each second capacitor 52 is arranged to straddle the second surface electrode 192D and the first surface electrode 191B in the Y direction.
  • Each second capacitor 52 is mounted on the second surface electrode 192D and the first surface electrode 191B. More specifically, each second capacitor 52 is individually bonded to the second surface electrode 192D and the first surface electrode 191B by a conductive bonding material SD.
  • the first electrode 52A of each second capacitor 52 is bonded to the second surface electrode 192D.
  • the second electrode 52B of each second capacitor 52 is bonded to the first surface electrode 191B.
  • the first electrode 52A is electrically connected to the second surface electrode 192D
  • the second electrode 52B is electrically connected to the first surface electrode 191B.
  • the multiple second capacitors 52 are arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the second switching element 181 in the Y direction.
  • the second switching element 181 is arranged between the semiconductor light-emitting element 30 and the multiple second capacitors 52 in the Y direction.
  • the multiple second capacitors 52 are arranged in a position that overlaps with the second switching element 181.
  • the first electrode 52A of each second capacitor 52 is electrically connected to the multiple drain electrodes 181D of the second switching element 181.
  • the multiple source electrodes 181S of the second switching element 181 are electrically connected to the multiple second element surface electrodes 34B via the third surface electrode 193B and multiple wires W5. Since the second element surface electrode 34B constitutes the second anode electrode of the semiconductor light emitting element 30, it can be said that the second anode electrode is electrically connected to the source electrode 181S of the second switching element 181.
  • the semiconductor light emitting device 10 further includes a first protection diode 101 and a second protection diode 102 .
  • the first protection diode 101 is a diode that protects the first light emitting portion 33A of the semiconductor light emitting element 30.
  • the first protection diode 101 is disposed closer to the first substrate side surface 23 than the semiconductor light emitting element 30, the first switching element 171, and the plurality of first capacitors 42 in the X direction.
  • the first protection diode 101 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the first switching element 171 in the Y direction.
  • the first protection diode 101 is disposed at a position overlapping with the first capacitor 42 as viewed from the X direction.
  • the first protection diode 101 is disposed so as to straddle the third surface electrode 193A and the first surface electrode 191B in the Y direction.
  • the first protection diode 101 is mounted on the third surface electrode 193A and the first surface electrode 191B. More specifically, the first protection diode 101 is individually bonded to the third surface electrode 193A and the first surface electrode 191B by a conductive bonding material SD.
  • the first protection diode 101 is arranged such that the first anode electrode 101A and the first cathode electrode 101B are at the same position in the X direction and spaced apart from each other in the Y direction.
  • the first protection diode 101 is connected in inverse parallel to the first light-emitting portion 33A. More specifically, the first anode electrode 101A is joined to the first surface electrode 191B by a conductive bonding material SD.
  • the first anode electrode 101A is arranged on the first surface electrode 191B. This electrically connects the first anode electrode 101A to the element back surface electrode 35 of the semiconductor light-emitting element 30 via the first surface electrode 191B and the first surface electrode 191A.
  • the first cathode electrode 101B is joined to the third surface electrode 193A by a conductive bonding material SD. As a result, the first cathode electrode 101B is electrically connected to a plurality of first element surface electrodes 34A corresponding to the first light emitting portions 33A of the semiconductor light emitting element 30 via the third surface electrode 193A and the wire W5.
  • the second protection diode 102 is a diode that protects the second light emitting portion 33B of the semiconductor light emitting element 30.
  • the second protection diode 102 is disposed closer to the second substrate side surface 24 than the semiconductor light emitting element 30, the second switching element 181, and the multiple second capacitors 52 in the X direction.
  • the second protection diode 102 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the second switching element 181 in the Y direction.
  • the second protection diode 102 is disposed at a position overlapping with the second capacitor 52 when viewed from the X direction.
  • the second protection diode 102 is disposed so as to straddle the third surface electrode 193B and the first surface electrode 191B in the Y direction.
  • the second protection diode 102 is mounted on the third surface electrode 193B and the first surface electrode 191B.
  • the mounting manner of the second protection diode 102 is the same as that of the first protection diode 101.
  • the second protection diode 102 is connected in inverse parallel to the second light-emitting portion 33B. More specifically, the second anode electrode 102A of the second protection diode 102 is joined to the first surface electrode 191B by a conductive bonding material SD. As a result, the second anode electrode 102A is electrically connected to the element back surface electrode 35 of the semiconductor light-emitting element 30 via the first surface electrode 191B and the first surface electrode 191A. The second cathode electrode 102B is joined to the third surface electrode 193B by a conductive bonding material SD.
  • the second cathode electrode 102B is electrically connected to a plurality of second element surface electrodes 34B corresponding to the second light-emitting portion 33B of the semiconductor light-emitting element 30 via the third surface electrode 193B and the wire W5.
  • the first switching element 171 includes a source electrode 171S, a drain electrode 171D, and a gate electrode 171G formed on the second element back surface 171B.
  • the second switching element 181 includes a source electrode 181S, a drain electrode 181D, and a gate electrode 181G formed on the second element back surface 181B.
  • the source electrode 171S, the drain electrode 171D, and the gate electrode 171G of the first switching element 171 are mounted on a plurality of surface electrodes 28A.
  • the source electrode 181S, the drain electrode 181D, and the gate electrode 181G of the second switching element 181 are mounted on a plurality of surface electrodes 28A.
  • the first switching element 171 is formed in a rectangular shape with its longitudinal direction in the X direction and its transverse direction in the Y direction in a plan view.
  • the second switching element 181 is formed in a rectangular shape with its longitudinal direction in the X direction and its transverse direction in the Y direction in a plan view.
  • the direction (X direction) perpendicular to the arrangement direction (Y direction) of the semiconductor light-emitting element 30, the first switching element 171, and the first capacitor 42 is the longitudinal direction of the first switching element 171, so the distance between the semiconductor light-emitting element 30 and the first capacitor 42 in the Y direction can be shortened compared to a configuration in which the arrangement direction is the longitudinal direction of the first switching element 171. This makes it possible to shorten the loop-shaped first current path formed by the semiconductor light-emitting element 30, the first switching element 171, and the first capacitor 42.
  • the direction (X direction) perpendicular to the arrangement direction (Y direction) of the semiconductor light-emitting element 30, the second switching element 181, and the second capacitor 52 is the longitudinal direction of the second switching element 181, so the distance between the semiconductor light-emitting element 30 and the second capacitor 52 in the Y direction can be shortened compared to a configuration in which the arrangement direction is the longitudinal direction of the second switching element 181. This makes it possible to shorten the loop-shaped second current path formed by the semiconductor light-emitting element 30, the second switching element 181, and the second capacitor 52.
  • the semiconductor light emitting device 10 is provided on the substrate 20 and includes first vias 211A, 211B, 211C, second vias 212A, 212B, third vias 213A, 213B, and fourth vias 214A, 214B as a plurality of vias that connect the plurality of back electrodes 28B and the plurality of front electrodes 28A.
  • the first current path between the first light emitting portion 33A of the semiconductor light emitting element 30 and the first driving circuit 40 is composed of the first front electrodes 191A, 191B, the second front electrode 192A, the third front electrode 193A, the fourth front electrode 194A, the first rear electrode 201, the second rear electrode 202A, the first vias 211A, 211B, and the second via 212A.
  • the second current path between the second light emitting portion 33B of the semiconductor light emitting element 30 and the second driving circuit 50 is composed of the first surface electrodes 191A, 191B, the second surface electrode 192B, the third surface electrode 193B, the fourth surface electrode 194B, the first back surface electrode 201, the second back surface electrode 202B, the first vias 211A, 211B, and the second via 212B.
  • a part of the loop of the first current path in which a current flows in the order of the first electrode 42A of the first capacitor 42, the drain electrode 171D and source electrode 171S of the first switching element 171, the first element surface electrode 34A and element back electrode 35 of the semiconductor light emitting element 30, and the second electrode 42B of the first capacitor 42, is formed by the first back electrode 201. Therefore, the area of the loop of the first current path can be reduced, and the inductance of the first current path can be reduced.
  • a part of the loop of the second current path in which a current flows in the order of the first electrode 52A of the second capacitor 52, the drain electrode 181D and source electrode 181S of the second switching element 181, the second element surface electrode 34B and element back electrode 35 of the semiconductor light emitting element 30, and the second electrode 52B of the second capacitor 52, is formed by the first back electrode 201. Therefore, the area of the loop of the second current path can be reduced, and the inductance of the second current path can be reduced.
  • the substrate 20 includes one base material 27.
  • a plurality of front electrodes 28A are formed on the front surface of the base material 27 (front surface 21 of the substrate), and a plurality of rear surface electrodes 28B are formed on the rear surface of the base material 27 (rear surface 22 of the substrate).
  • the distance in the Z direction between the multiple front electrodes 28A and the multiple back electrodes 28B is shorter than in a configuration in which the substrate 20 includes multiple base materials 27. Therefore, heat from the semiconductor light emitting element 30 is more easily transferred to the outside of the semiconductor light emitting device 10 via the front electrode 28A and the back electrode 28B.
  • the first switching element 171 and the second switching element 181 are formed using horizontal transistors of the same configuration. According to this configuration, the semiconductor light emitting device 10 uses one type of switching element, and therefore the manufacturing costs of the semiconductor light emitting device 10 can be reduced compared to a case in which two types of switching elements are used.
  • a semiconductor light emitting device 10 of the fourth embodiment will be described with reference to Figures 16 to 19.
  • the semiconductor light emitting device 10 of the fourth embodiment differs from the semiconductor light emitting device 10 of the third embodiment in the number of light emitting parts that are individually controlled.
  • differences from the third embodiment will be described in detail, and components common to the third embodiment will be given the same reference numerals and their description may be omitted.
  • FIG. 16 shows a schematic planar structure of the semiconductor light-emitting device 10 of the fourth embodiment.
  • FIG. 17 shows a schematic back surface structure of the semiconductor light-emitting device 10 of FIG. 16.
  • FIG. 18 shows a schematic planar structure of the semiconductor light-emitting device 10 of FIG. 16, enlarging the region between the imaginary center line VC of FIG. 16 and the first substrate side surface 23.
  • FIG. 19 shows a schematic planar structure of the semiconductor light-emitting device 10 of FIG. 16, enlarging the region between the imaginary center line VC of FIG. 16 and the second substrate side surface 24.
  • the rectangular frames of two-dot chain lines shown in FIG. 16, FIG. 18, and FIG. 19 indicate openings in the front resist 29A (see FIG. 3).
  • the rectangular frames of two-dot chain lines shown in FIG. 17 indicate openings in the back resist 29B (see FIG. 3).
  • the semiconductor light emitting element 30 includes first to fourth light emitting portions 33A to 33D, each of which includes two light emitting portions 33 out of the eight light emitting portions 33, and first to fourth element surface electrodes 34A to 34D provided corresponding to the first to fourth light emitting portions 33A.
  • the first element surface electrode 34A is provided on the first light emitting portion 33A
  • the second element surface electrode 34B is provided on the second light emitting portion 33B
  • the third element surface electrode 34C is provided on the third light emitting portion 33C
  • the fourth element surface electrode 34D is provided on the fourth light emitting portion 33D.
  • the number of each of the first to fourth element surface electrodes 34A to 34D is set according to the number of the first to fourth light emitting portions 33A to 33D.
  • the number of each of the first to fourth light emitting portions 33A to 33D is two, the number of each of the first to fourth element surface electrodes 34A to 34D is two.
  • the first element surface electrode 34A is an example of a "first anode electrode”
  • the second element surface electrode 34B is an example of a "second anode electrode”
  • the third element surface electrode 34C is an example of a "third anode electrode”
  • the fourth element surface electrode 34D is an example of a "fourth anode electrode.”
  • the semiconductor light emitting device 10 includes a configuration for individually controlling the driving of the first to fourth light emitting units 33A to 33D.
  • the semiconductor light emitting device 10 includes a first drive circuit 40 that drives the first light emitting unit 33A, a second drive circuit 50 that drives the second light emitting unit 33B, a third drive circuit 110 that drives the third light emitting unit 33C, and a fourth drive circuit 120 that drives the fourth light emitting unit 33D.
  • the first drive circuit 40 includes a first switching element 171 and a first capacitor 42, as in the third embodiment.
  • the second drive circuit 50 includes a second switching element 181 and a second capacitor 52, as in the third embodiment.
  • the first switching element 171 and the second switching element 181 are horizontal transistors, as in the third embodiment, but their configurations are different from those in the third embodiment. The configurations of the first switching element 171 and the second switching element 181 will be described later.
  • the third drive circuit 110 includes a third switching element 221 that controls the drive of the third light-emitting unit 33C, and a third capacitor 112 that supplies current to the third light-emitting unit 33C.
  • the third switching element 221 and the third capacitor 112 are arranged at a distance from the semiconductor light-emitting element 30.
  • the fourth drive circuit 120 includes a fourth switching element 222 that controls the drive of the fourth light-emitting unit 33D, and a fourth capacitor 122 that supplies current to the fourth light-emitting unit 33D.
  • the fourth switching element 222 and the fourth capacitor 122 are arranged at a distance from the semiconductor light-emitting element 30.
  • the configuration of the substrate 20 differs from that of the third embodiment.
  • the configuration of the substrate 20 of the fourth embodiment will be described below. 16, 18, and 19, the substrate 20 includes first surface electrodes 231A, 231B, second surface electrodes 232A to 232D, third surface electrodes 233A to 233H, and fourth surface electrodes 234A to 234D as surface electrodes 28A formed on the substrate surface 21.
  • the first surface electrodes 231A, 231B, second surface electrodes 232A to 232D, third surface electrodes 233A to 233H, and fourth surface electrodes 234A to 234D are arranged spaced apart from one another.
  • the first surface electrode 231A is a surface electrode on which the semiconductor light emitting element 30 is mounted.
  • the first surface electrode 231A is disposed near the third substrate side surface 25 of the substrate surface 21 in a plan view and at the center of the substrate surface 21 in the X direction.
  • the first surface electrode 231A is formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the first surface electrode 231A is symmetrical with respect to the imaginary center line VC.
  • the dimension of the first surface electrode 231A in the X direction is greater than 1/4 and less than 1/3 of the dimension of the substrate surface 21 in the X direction.
  • the first surface electrode 231B is a surface electrode constituting a ground wiring electrically connected to a ground terminal electrically connected to the negative pole of the DC power supply 801 (see FIG. 5).
  • the first surface electrode 231B is formed in a substantially U-shape on the outer periphery of the substrate surface 21.
  • the first surface electrode 231B includes a first wiring portion 231BA formed along the first substrate side surface 23, a second wiring portion 231BB formed along the second substrate side surface 24, and a third wiring portion 231BC formed along the fourth substrate side surface 26.
  • the first wiring portion 231BA, the second wiring portion 231BB, and the third wiring portion 231BC are integrated.
  • the first surface electrode 231B has an axisymmetric shape with respect to the virtual center line VC.
  • the dashed dotted line on the first surface electrode 231B in FIG. 16 is a boundary line that separates the first wiring portion 231BA, the second wiring portion 231BB, and the third wiring portion 231BC.
  • the first surface electrode 231B is formed to surround the first surface electrode 231A, the second surface electrodes 232A-232D, the third surface electrodes 233A-233H, and the fourth surface electrodes 234A-234D.
  • the area of the first surface electrode 231B is larger than the area of each of the first surface electrode 231A, the second surface electrodes 232A-232D, the third surface electrodes 233A-233H, and the fourth surface electrodes 234A-234D.
  • the first wiring portion 231BA includes a wide portion 231CA and a narrow portion 231CB.
  • the wide portion 231CA constitutes a portion of the first wiring portion 231BA that is continuous with the third wiring portion 231BC.
  • the narrow portion 231CB is provided on the opposite side of the wide portion 231CA to the third wiring portion 231BC.
  • the wide portion 231CA and the narrow portion 231CB form a recessed portion 231CC.
  • the length of the narrow portion 231CB in the Y direction is longer than the length of the wide portion 231CA in the Y direction.
  • the second wiring portion 231BB includes a wide portion 231DA and a narrow portion 231DB.
  • the second wiring portion 231BB is disposed in line symmetry with respect to the first wiring portion 231BA, centered on the imaginary center line VC.
  • the second wiring portion 231BB is in a line symmetrical shape with respect to the first wiring portion 231BA, centered on the imaginary center line VC. Therefore, a recessed portion 231DC is formed by the wide portion 231DA and the narrow portion 231DB.
  • the third wiring portion 231BC includes a first recess 231EA and a second recess 231EB.
  • the first recess 231EA and the second recess 231EB are formed in a rectangular recess such that the third wiring portion 231BC is recessed toward the fourth substrate side surface 26. It can be said that both the first recess 231EA and the second recess 231EB are open toward the third substrate side surface 25.
  • the second recess 231EB is formed within the first recess 231EA. More specifically, the second recess 231EB is recessed from the bottom surface of the first recess 231EA toward the fourth substrate side surface 26.
  • the Y-direction dimension of the first recess 231EA which is the depth dimension of the first recess 231EA, is greater than the Y-direction dimension of the second recess 231EB, which is the depth dimension of the second recess 231EB.
  • the dimension of the second recess 231EB in the X direction is greater than the dimension of the first surface electrode 231A in the X direction.
  • the first recess 231EA and the second recess 231EB each have an axisymmetric shape with respect to the imaginary center line VC.
  • the second surface electrodes 232A, 232B, the third surface electrodes 233A, 233B, 233E, 233F, and the fourth surface electrodes 234A, 234B are disposed between the first surface electrode 231A and the third wiring portion 231BC of the first surface electrode 231B in the Y direction.
  • the second surface electrode 232A, the third surface electrodes 233A and 233E, and the fourth surface electrode 234A are electrodes that are electrically connected to the first drive circuit 40.
  • the second surface electrode 232B, the third surface electrodes 233B and 233F, and the fourth surface electrode 234B are electrodes that are electrically connected to the second drive circuit 50.
  • the third surface electrode 233A is an electrode electrically connected to the drain electrode 171D of the first switching element 171.
  • the third surface electrode 233A is disposed between the imaginary center line VC and the first substrate side surface 23, closer to the imaginary center line VC in the X direction.
  • the third surface electrode 233A is formed in an elliptical shape with the Y direction being the long side direction and the X direction being the short side direction in a plan view.
  • the second surface electrode 232A is an electrode electrically connected to the source electrode 171S of the first switching element 171.
  • the second surface electrode 232A is formed so as to surround the third surface electrode 233A in a plan view.
  • the second surface electrode 232A is arranged between the first surface electrode 231A and the third wiring portion 231BC of the first surface electrode 231B in the Y direction.
  • the end closer to the third substrate side surface 25 is arranged in a position adjacent to the first surface electrode 231A in the Y direction.
  • the end closer to the fourth substrate side surface 26 of the second surface electrode 232A is arranged in a position adjacent to the third surface electrode 233E and the third wiring portion 231BC in the Y direction.
  • the end closer to the fourth substrate side surface 26 of the second surface electrode 232A is arranged in the first recess 231EA of the third wiring portion 231BC.
  • the end of the second surface electrode 232A closer to the fourth substrate side surface 26 is formed so as to surround a portion of the third surface electrode 233E.
  • the third surface electrode 233E is an electrode electrically connected to the third surface electrode 233A.
  • the third surface electrode 233E is arranged closer to the third wiring portion 231BC than the third surface electrode 233A in the Y direction.
  • a part of the third surface electrode 233E is arranged within the second recess 231EB of the third wiring portion 231BC.
  • the third surface electrode 233E is arranged at a position adjacent to the virtual center line VC in the X direction.
  • the third surface electrode 233E is formed in a rectangular shape with the X direction as the long side and the Y direction as the short side in a plan view.
  • the fourth surface electrode 234A is an electrode electrically connected to the gate electrode 171G of the first switching element 171.
  • the fourth surface electrode 234A is disposed between the first surface electrode 231A and the third surface electrode 233E in the Y direction, closer to the third surface electrode 233E.
  • the fourth surface electrode 234A has a rectangular shape with the X direction as the long side and the Y direction as the short side in a plan view.
  • the fourth surface electrode 234A is surrounded by the second surface electrode 232A and the third surface electrode 233A.
  • the third surface electrode 233B is an electrode that is electrically connected to the drain electrode 181D of the second switching element 181.
  • the third surface electrode 233B is in a line-symmetric relationship with the third surface electrode 233A with respect to the virtual center line VC.
  • the second surface electrode 232B is an electrode electrically connected to the source electrode 181S of the second switching element 181.
  • the second surface electrode 232B is disposed closer to the second substrate side surface 24 than the imaginary center line VC.
  • the second surface electrode 232B has a shape that is different from the shape that is linearly symmetrical with respect to the second surface electrode 232A with respect to the imaginary center line VC.
  • the second surface electrode 232B is formed so as to surround the third surface electrode 233B. Of both ends of the second surface electrode 232B in the Y direction, the end closer to the third substrate side surface 25 is disposed in a position adjacent to the first surface electrode 231A in the Y direction.
  • the end closer to the fourth substrate side surface 26 of the second surface electrode 232B is disposed in a position adjacent to the third surface electrode 233F and the third wiring part 231BC in the Y direction.
  • the end closer to the fourth substrate side surface 26 of the second surface electrode 232B is disposed in the first recess 231EA of the third wiring part 231BC.
  • the end of the second surface electrode 232B closer to the fourth substrate side surface 26 is formed so as to surround a portion of the third surface electrode 233F.
  • the third surface electrode 233F is an electrode that is electrically connected to the third surface electrode 233B.
  • the third surface electrode 233F is in a line-symmetric relationship with the third surface electrode 233E with respect to the virtual center line VC.
  • the fourth surface electrode 234B is an electrode electrically connected to the gate electrode 181G of the second switching element 181.
  • the fourth surface electrode 234B is disposed between the first surface electrode 231A and the third surface electrode 233F in the Y direction, closer to the first surface electrode 231A.
  • the fourth surface electrode 234B has a rectangular shape with the X direction as the long side and the Y direction as the short side in a plan view.
  • the fourth surface electrode 234B is surrounded by the second surface electrode 232B and the third surface electrode 233B.
  • the second surface electrode 232C, the third surface electrodes 233C, 233G, and the fourth surface electrode 234C are arranged between the first surface electrode 231A and the first wiring portion 231BA of the first surface electrode 231B in the X direction.
  • the second surface electrode 232C, the third surface electrodes 233C, 233G, and the fourth surface electrode 234C are electrodes electrically connected to the third drive circuit 110.
  • the second surface electrode 232C is an electrode electrically connected to a source electrode 221S (described later) of the third switching element 221 of the third drive circuit 110.
  • the third surface electrode 233C is an electrode electrically connected to a drain electrode 221D (described later) of the third switching element 221.
  • the third surface electrode 233G is an electrode electrically connected to the third surface electrode 233C.
  • the fourth surface electrode 234C is an electrode electrically connected to a gate electrode 221G (described later) of the third switching element 221.
  • the second surface electrode 232C, the third surface electrodes 233C and 233G, and the fourth surface electrode 234C are the same in shape and size as the second surface electrode 232B, the third surface electrodes 233B and 233F, and the fourth surface electrode 234B.
  • the second surface electrode 232C, the third surface electrodes 233C and 233G, and the fourth surface electrode 234C are arranged in a manner rotated 90° counterclockwise from the second surface electrode 232B, the third surface electrodes 233B and 233F, and the fourth surface electrode 234B.
  • a portion of the third surface electrode 233G is disposed within the recessed portion 231CC of the first wiring portion 231BA.
  • a portion of the second surface electrode 232C is formed so as to surround a portion of the third surface electrode 233G.
  • the third surface electrode 233C includes a portion that faces the wide portion 231CA of the first wiring portion 231BA in the X direction.
  • the third surface electrode 233C includes a portion that is adjacent in the X direction to the end portion closer to the first substrate side surface 23 of both ends of the first surface electrode 231A in the X direction.
  • the second surface electrode 232D, the third surface electrodes 233D, 233H, and the fourth surface electrode 234D are disposed between the first surface electrode 231A and the second wiring portion 231BB of the first surface electrode 231B in the X direction.
  • the second surface electrode 232D, the third surface electrodes 233D, 233H, and the fourth surface electrode 234D are electrodes electrically connected to the fourth drive circuit 120.
  • the second surface electrode 232D is an electrode electrically connected to a source electrode 222S (described later) of the fourth switching element 222 of the fourth drive circuit 120.
  • the third surface electrode 233D is an electrode electrically connected to a drain electrode 222D (described later) of the fourth switching element 222.
  • the third surface electrode 233H is an electrode electrically connected to the third surface electrode 233D.
  • the fourth surface electrode 234D is an electrode electrically connected to a gate electrode 222G (described later) of the fourth switching element 222.
  • the second surface electrode 232D, the third surface electrodes 233D and 233H, and the fourth surface electrode 234D are the same in shape and size as the second surface electrode 232A, the third surface electrodes 233A and 233E, and the fourth surface electrode 234A.
  • the second surface electrode 232D, the third surface electrodes 233D and 233H, and the fourth surface electrode 234D are arranged in a manner rotated 90° clockwise from the second surface electrode 232A, the third surface electrodes 233A and 233E, and the fourth surface electrode 234A.
  • a portion of the third surface electrode 233H is disposed within the recess 231DC of the second wiring portion 231BB.
  • a portion of the second surface electrode 232D is formed so as to surround a portion of the third surface electrode 233H.
  • the third surface electrode 233D includes a portion that faces the wide portion 231DA of the second wiring portion 231BB in the X direction.
  • the third surface electrode 233D includes a portion that is adjacent in the X direction to the end portion closer to the second substrate side surface 24 of both ends of the first surface electrode 231A in the X direction.
  • the back surface electrode 28B includes first back surface electrodes 241A-241C, second back surface electrodes 242A-242D, third back surface electrodes 243A-243H, and fourth back surface electrodes 244A-244D.
  • the first back surface electrode 241A is an electrode electrically connected to the first surface electrode 231A and the first surface electrode 231B (see FIG. 16 for both).
  • the first back surface electrode 241A is an electrode constituting a ground terminal electrically connected to a ground wiring.
  • the area of the first back surface electrode 241A is larger than the area of each of the first back surface electrodes 241B-241C, the second back surface electrodes 242A-242D, the third back surface electrodes 243A-243H, and the fourth back surface electrodes 244A-244D.
  • the first back electrode 241A is formed in a substantially T-shape in plan view.
  • the first back electrode 241A includes a wide portion 241AA and a narrow portion 241AB. In one example, the wide portion 241AA and the narrow portion 241AB are integrated.
  • the first back electrode 241A is symmetrical with respect to the imaginary center line VC.
  • the wide portion 241AA is disposed in a position adjacent to the third substrate side surface 25 in the Y direction in a plan view.
  • the wide portion 241AA is formed across substantially the entire substrate back surface 22 in the X direction.
  • the dimension of the wide portion 241AA in the Y direction is greater than 1/4 and less than 1/3 of the dimension of the substrate back surface 22 in the Y direction.
  • the narrow portion 241AB extends from the center of the wide portion 241AA in the X direction toward the fourth substrate side surface 26.
  • the tip of the narrow portion 241AB is disposed in a position adjacent to the fourth substrate side surface 26 in the Y direction in a plan view.
  • the dimension of the wide portion 241AA in the X direction is greater than 1/4 and less than 1/3 of the dimension of the substrate back surface 22 in the X direction.
  • the first back surface electrode 241A includes first to fourth openings 241AC to 241AF.
  • the first opening 241AC and the second opening 241AD are formed in the narrow width portion 241AB.
  • the first opening 241AC and the second opening 241AD are arranged on both sides of the imaginary center line VC in the X direction.
  • the first opening 241AC is arranged closer to the first substrate side surface 23 than the imaginary center line VC
  • the second opening 241AD is arranged closer to the second substrate side surface 24 than the imaginary center line VC.
  • Each of the first opening 241AC and the second opening 241AD is formed in an elliptical shape with the Y direction being the longitudinal direction and the X direction being the lateral direction in a plan view.
  • the shape and size of the first opening 241AC and the second opening 241AD are the same as each other. That is, the first opening 241AC and the second opening 241AD are in a line-symmetrical relationship with respect to the imaginary center line VC.
  • the third opening 241AE and the fourth opening 241AF are formed in the wide portion 241AA.
  • the third opening 241AE and the fourth opening 241AF are distributed and arranged on both sides of the narrow portion 241AB in the X direction.
  • the third opening 241AE is arranged closer to the first substrate side surface 23 than the narrow portion 241AB in the X direction
  • the fourth opening 241AF is arranged closer to the second substrate side surface 24 than the narrow portion 241AB in the X direction.
  • Each of the third opening 241AE and the fourth opening 241AF is formed in an elliptical shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view.
  • the shape and size of the third opening 241AE and the fourth opening 241AF are the same as each other. In other words, the third opening 241AE and the fourth opening 241AF are in a line-symmetrical relationship with respect to the virtual center line VC.
  • the third back electrodes 243A to 243D are arranged in the first to fourth openings 241AC to 241AF, respectively. That is, the third back electrode 243A is arranged in the first opening 241AC, the third back electrode 243B is arranged in the second opening 241AD, the third back electrode 243C is arranged in the third opening 241AE, and the third back electrode 243D is arranged in the fourth opening 241AF.
  • the third back electrode 243A and the third back electrode 243B are formed in an elliptical shape with the Y direction as the long side and the X direction as the short side.
  • the third back electrode 243C and the third back electrode 243D are formed in an elliptical shape with the X direction as the long side and the Y direction as the short side.
  • the third back electrode 243A is an electrode electrically connected to the third surface electrodes 233A and 233E (see FIG. 16).
  • the third back surface electrode 243B is an electrode electrically connected to the third surface electrodes 233B and 233F (see FIG. 16).
  • the third back surface electrode 243C is an electrode electrically connected to the third surface electrodes 233C and 233G (see FIG. 16).
  • the third back surface electrode 243D is an electrode electrically connected to the third surface electrodes 233D and 233H (see FIG. 16).
  • the third back surface electrode 243A extends in the Y direction so as to overlap with the third surface electrodes 233A and 233E in a plan view.
  • the third back surface electrode 243B extends in the Y direction so as to overlap with the third surface electrodes 233B and 233F in a plan view.
  • the third back surface electrode 243C extends in the X direction so as to overlap with the third surface electrodes 233C and 233G in a plan view.
  • the third back surface electrode 243D extends in the X direction so as to overlap with the third back surface electrodes 243D and 243H in a plan view.
  • the first back surface electrode 241B and the first back surface electrode 241C are electrodes electrically connected to the first surface electrode 231B. Therefore, each of the first back surface electrode 241B and the first back surface electrode 241C is electrically connected to the first back surface electrode 241A via the first surface electrode 231B.
  • the first back surface electrode 241B and the first back surface electrode 241C are electrodes that constitute a ground terminal, similar to the first back surface electrode 241A.
  • the first back surface electrode 241B is disposed at the corner of the first substrate side surface 23 and the fourth substrate side surface 26 among the four corners of the substrate back surface 22.
  • the first back surface electrode 241C is disposed at the corner of the second substrate side surface 24 and the fourth substrate side surface 26 among the four corners of the substrate back surface 22.
  • Each of the first back surface electrode 241B and the first back surface electrode 241C is formed in a rectangular shape with the X direction being the longitudinal direction and the Y direction being the lateral direction in a plan view. In the example of FIG. 17, the dimension in the X direction of each of the first back surface electrode 241B and the first back surface electrode 241C is slightly larger than the dimension in the Y direction.
  • the shape and size of the first back surface electrode 241B and the first back surface electrode 241C are the same as each other. In other words, the first back surface electrode 241B and the first back surface electrode 241C are in a line-symmetrical relationship with respect to the virtual center line VC.
  • a second back electrode 242A, a third back electrode 243E, and a fourth back electrode 244A are arranged between the narrow portion 241AB of the first back electrode 241A and the first back electrode 241B in the X direction.
  • the third back surface electrode 243E is an electrode electrically connected to the third front surface electrode 233E.
  • the third back surface electrode 243E is disposed in a position adjacent to the narrow width portion 241AB in the X direction.
  • the third back surface electrode 243E is formed in a rectangular shape with the Y direction being the long side direction and the X direction being the short side direction in a plan view.
  • the second back surface electrode 242A is an electrode electrically connected to the second surface electrode 232A (see FIG. 16).
  • the second back surface electrode 242A is disposed closer to the first back surface electrode 241B than the third back surface electrode 243E and the fourth back surface electrode 244A.
  • the third back surface electrode 243A includes a first portion disposed adjacent to the fourth back surface electrode 244A in the X direction, a second portion disposed in a position overlapping with the third back surface electrode 243E when viewed from the Y direction and closer to the wide portion 241AA than the third back surface electrode 243E and the fourth back surface electrode 244A, and a connecting portion connecting the first portion and the second portion.
  • the fourth back surface electrode 244A is an electrode electrically connected to the fourth surface electrode 234A (see FIG. 16).
  • the fourth back surface electrode 244A includes a first portion arranged adjacent to the third back surface electrode 243E on the opposite side of the narrow portion 241AB in the X direction, a second portion arranged overlapping the third back surface electrode 243E when viewed from the Y direction and closer to the wide portion 241AA than the third back surface electrode 243E, and a connecting portion connecting the first portion and the second portion.
  • a third back surface electrode 243F, a second back surface electrode 242B, and a fourth back surface electrode 244B are arranged between the narrow width portion 241AB of the first back surface electrode 241A and the first back surface electrode 241C in the X direction.
  • the third back surface electrode 243F is an electrode electrically connected to the third front surface electrode 233F.
  • the third back surface electrode 243F is disposed in a position adjacent to the narrow width portion 241AB in the X direction.
  • the third back surface electrode 243F is formed in a rectangular shape with the Y direction being the long side direction and the X direction being the short side direction in a plan view.
  • the second back surface electrode 242B is an electrode electrically connected to the second surface electrode 232B (see FIG. 16).
  • the second back surface electrode 242B includes a first portion arranged adjacent to the third back surface electrode 243F on the opposite side of the narrow portion 241AB in the X direction, a second portion arranged overlapping the third back surface electrode 243F when viewed from the Y direction and closer to the wide portion 241AA than the third back surface electrode 243F, and a connecting portion connecting the first portion and the second portion.
  • the fourth back surface electrode 244B is an electrode electrically connected to the fourth surface electrode 234B (see FIG. 16).
  • the fourth back surface electrode 244B is disposed closer to the first back surface electrode 241C than the third back surface electrode 243F and the second back surface electrode 242B.
  • the fourth back surface electrode 244B includes a first portion disposed adjacent to the second back surface electrode 242B in the X direction, a second portion disposed in a position overlapping with the third back surface electrode 243F when viewed from the Y direction and closer to the wide portion 241AA than the third back surface electrode 243F and the second back surface electrode 242B, and a connecting portion connecting the first portion and the second portion.
  • a third back electrode 243G, a second back electrode 242C, and a fourth back electrode 244C are arranged between the wide portion 241AA of the first back electrode 241A and the first back electrode 241B in the Y direction.
  • the shapes and sizes of the third back electrode 243G, the second back electrode 242C, and the fourth back electrode 244C are the same as the shapes and sizes of the third back electrode 243E, the second back electrode 242B, and the fourth back electrode 244B.
  • the third back electrode 243G, the second back electrode 242C, and the fourth back electrode 244C are each configured by rotating the third back electrode 243F, the second back electrode 242B, and the fourth back electrode 244B by 90° clockwise.
  • a third back electrode 243H, a second back electrode 242D, and a fourth back electrode 244D are arranged between the wide portion 241AA of the first back electrode 241A and the second back electrode 242C in the Y direction.
  • the shapes and sizes of the third back electrode 243H, the second back electrode 242D, and the fourth back electrode 244D are the same as the shapes and sizes of the third back electrode 243E, the second back electrode 242A, and the fourth back electrode 244A.
  • the third back electrode 243H, the second back electrode 242D, and the fourth back electrode 244D are each configured by rotating the third back electrode 243E, the second back electrode 242A, and the fourth back electrode 244A by 90° counterclockwise.
  • the substrate 20 includes first vias 251A to 251F, second vias 252A to 252D, third vias 253A to 253H, and fourth vias 254A to 254D.
  • the first vias 251A to 251F, second vias 252A to 252D, third vias 253A to 253H, and fourth vias 254A to 254D are arranged to penetrate the base material 27 in the Z direction.
  • the first vias 251A to 251F, second vias 252A to 252D, third vias 253A to 253H, and fourth vias 254A to 254D are formed from a material including, for example, one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the first via 251A is electrically connected to the first surface electrode 231A and the first back surface electrode 241A. This electrically connects the first surface electrode 231A and the first back surface electrode 241A to each other.
  • a plurality of first vias 251A are provided.
  • the plurality of first vias 251A are provided on the first surface electrode 231A closer to the third substrate side surface 25. Therefore, in a plan view, the plurality of first vias 251A are arranged at positions on the first surface electrode 231A that overlap with the semiconductor light emitting element 30.
  • the plurality of first vias 251A are arranged at intervals from each other in the X direction and the Y direction.
  • the number of first vias 251A arranged in the X direction is greater than the number of first vias 251A arranged in the Y direction.
  • the area in which the plurality of first vias 251A are formed is greater than the area of the semiconductor light emitting element 30. Therefore, some of the plurality of first vias 251A are arranged outside the semiconductor light emitting element 30 in a plan view.
  • each of the first vias 251B to 251D is electrically connected to the first surface electrode 231B and the first back surface electrode 241A. This electrically connects the first surface electrode 231B and the first back surface electrode 241A to each other. Therefore, the first surface electrode 231A and the first surface electrode 231B are electrically connected via the first back surface electrode 241A and the first vias 251B to 251D.
  • each of the first vias 251B to 251D is provided in multiple numbers.
  • the multiple first vias 251B are provided at the end of the first wiring portion 231BA of the first surface electrode 231B closer to the third substrate side surface 25.
  • the multiple first vias 251C are provided at the end of the second wiring portion 231BB of the first surface electrode 231B closer to the third substrate side surface 25.
  • the multiple first vias 251D are provided in the center in the X direction of the third wiring portion 231BC of the first surface electrode 231B.
  • the first via 251E is electrically connected to the first surface electrode 231B and the first back surface electrode 241B. As a result, the first surface electrode 231B and the first back surface electrode 241B are electrically connected to each other.
  • a plurality of first vias 251E are provided. As shown in Figure 18, the plurality of first vias 251E are provided at the end of the third wiring portion 231BC of the first surface electrode 231B that is closer to the first substrate side surface 23.
  • the first via 251F is electrically connected to the first surface electrode 231B and the first back surface electrode 241C. As a result, the first surface electrode 231B and the first back surface electrode 241C are electrically connected to each other.
  • a plurality of first vias 251F are provided. As shown in Figure 19, the plurality of first vias 251F are provided at the end of the third wiring portion 231BC of the first surface electrode 231B that is closer to the second substrate side surface 24.
  • a plurality of third vias 253A to 253D are provided.
  • the number of third vias 253A to 253D is less than the number of first vias 251A to 251F. In one example, the number of third vias 253A to 253D is three.
  • the third via 253A is electrically connected to the third surface electrodes 233A, 233E and the third back surface electrode 243A.
  • the third surface electrodes 233A, 233E and the third back surface electrode 243A are electrically connected to each other.
  • the third surface electrode 233A and the third surface electrode 233E are electrically connected via the third back surface electrode 243A and the third via 253A.
  • the third via 253B is electrically connected to the third surface electrodes 233B, 233F and the third back surface electrode 243B.
  • the third surface electrodes 233B, 233F and the third back surface electrode 243B are electrically connected to each other.
  • the third surface electrode 233B and the third surface electrode 233F are electrically connected via the third back surface electrode 243B and the third via 253B.
  • the third via 253C is electrically connected to the third surface electrodes 233C, 233G and the third back surface electrode 243C.
  • the third surface electrodes 233C, 233G and the third back surface electrode 243C are electrically connected to each other.
  • the third surface electrode 233C and the third surface electrode 233G are electrically connected via the third back surface electrode 243C and the third via 253C.
  • the third via 253D is electrically connected to the third surface electrodes 233D, 233H and the third back surface electrode 243D.
  • the third surface electrodes 233D, 233H and the third back surface electrode 243D are electrically connected to each other.
  • the third surface electrode 233D and the third surface electrode 233H are electrically connected via the third back surface electrode 243D and the third via 253D.
  • Each of the third vias 253E to 253H is provided in plurality.
  • the number of each of the third vias 253E to 253H is less than the number of each of the third vias 253A to 253D. In one example, the number of each of the third vias 253E to 253H is two.
  • the third via 253E is electrically connected to the third surface electrode 233E and the third back surface electrode 243E.
  • the third surface electrode 233E and the third back surface electrode 243E are electrically connected to each other.
  • the third surface electrode 233A and the third back surface electrode 243E are electrically connected via the third surface electrode 233E.
  • the third via 253F is electrically connected to the third surface electrode 233F and the third back surface electrode 243F.
  • the third surface electrode 233F and the third back surface electrode 243F are electrically connected to each other.
  • the third surface electrode 233B and the third back surface electrode 243F are electrically connected via the third surface electrode 233F.
  • the third via 253G is electrically connected to the third surface electrode 233G and the third back surface electrode 243G.
  • the third surface electrode 233G and the third back surface electrode 243G are electrically connected to each other.
  • the third surface electrode 233C and the third back surface electrode 243G are electrically connected via the third surface electrode 233G.
  • the third via 253H is electrically connected to the third surface electrode 233H and the third back surface electrode 243H.
  • the third surface electrode 233H and the third back surface electrode 243H are electrically connected to each other.
  • the third surface electrode 233D and the third back surface electrode 243H are electrically connected via the third surface electrode 233H.
  • two second vias 252A to 252D are provided.
  • the second via 252A is electrically connected to the second surface electrode 232A and the second back surface electrode 242A.
  • the second via 252B is electrically connected to the second surface electrode 232B and the second back surface electrode 242B.
  • the second via 252C is electrically connected to the second surface electrode 232C and the second back surface electrode 242C.
  • the second surface electrode 232C and the second back surface electrode 242C are electrically connected to each other.
  • the second via 252D is electrically connected to the second surface electrode 232D and the second back surface electrode 242D.
  • the second surface electrode 232D and the second back surface electrode 242D are electrically connected to each other.
  • the fourth via 254A is electrically connected to the fourth surface electrode 234A and the fourth back surface electrode 244A.
  • the fourth via 254B is electrically connected to the fourth surface electrode 234B and the fourth back surface electrode 244B.
  • the fourth via 254C is electrically connected to the fourth surface electrode 234C and the fourth back surface electrode 244C.
  • the fourth via 254D is electrically connected to the fourth surface electrode 234D and the fourth back surface electrode 244D.
  • the fourth surface electrode 234D and the fourth back surface electrode 244D are electrically connected to each other.
  • the semiconductor light emitting element 30 (Configuration and arrangement of semiconductor light emitting element and first to fourth driving circuits) 16, 18, and 19, the semiconductor light emitting element 30, the first drive circuit 40, the second drive circuit 50, the third drive circuit 110, and the fourth drive circuit 120 are mounted on the multiple surface electrodes 28A.
  • Detailed configurations and mounting modes of the semiconductor light emitting element 30 and the first to fourth drive circuits 40, 50, 110, and 120 will be described below. Note that components common to the third embodiment are given the same reference numerals, and descriptions thereof may be omitted.
  • the semiconductor light-emitting element 30 is mounted on the first surface electrode 231A. That is, the element back electrode 35 (not shown in FIG. 16, see FIG. 3) of the semiconductor light-emitting element 30 is joined to the first surface electrode 231A by a conductive bonding material SD (not shown). As a result, the element back electrode 35 is electrically connected to the first surface electrode 231A.
  • the semiconductor light-emitting element 30 is positioned biased toward the third substrate side surface 25 with respect to the center of the first surface electrode 231A in the Y direction.
  • the size, shape, and configuration of the semiconductor light-emitting element 30 of the fourth embodiment are the same as those of the semiconductor light-emitting element 30 of the third embodiment.
  • the semiconductor light-emitting element 30 of the fourth embodiment divides the eight light-emitting portions 33 into first to fourth light-emitting portions 33A to 33D, each of which has two light-emitting portions 33.
  • the method of dividing the first to fourth light-emitting portions 33A to 33D is the same as in the second embodiment.
  • the number and shape of the drain electrodes 171D and source electrodes 171S of the first switching element 171 in the fourth embodiment and the shape of the gate electrode 171G are different from those in the third embodiment. More specifically, one drain electrode 171D is provided.
  • the drain electrode 171D is formed in a rectangular shape with the Y direction as the long side and the X direction as the short side in a plan view.
  • a plurality of source electrodes 171S (two in the fourth embodiment) are provided. The plurality of source electrodes 171S are distributed and arranged on both sides of the drain electrode 171D in the X direction.
  • the source electrode 171S closer to the virtual center line VC than the drain electrode 171D is formed in a rectangular shape with the Y direction as the long side and the X direction as the short side in a plan view.
  • the other source electrode 171S is approximately square in a plan view.
  • the gate electrode 171G is disposed at the same position in the X direction as the other source electrode 171S, and is disposed closer to the fourth substrate side surface 26 in the Y direction than the source electrode 171S.
  • the gate electrode 171G is formed in a substantially square shape in a plan view.
  • the first switching element 171 is formed in a rectangular shape with the X direction as the long side direction and the Y direction as the short side direction in a plan view.
  • the first switching element 171 is mounted on the second surface electrode 232A, the third surface electrode 233A, and the fourth surface electrode 234A. More specifically, each drain electrode 171D of the first switching element 171 is joined to the third surface electrode 233A by a conductive bonding material SD (not shown). Each source electrode 171S is joined to the second surface electrode 232A by a conductive bonding material SD (not shown). The gate electrode 171G is joined to the fourth surface electrode 234A by a conductive bonding material SD (not shown). In this way, the drain electrode 171D is electrically connected to the third surface electrode 233A, the source electrode 171S is electrically connected to the second surface electrode 232A, and the gate electrode 171G is electrically connected to the fourth surface electrode 234A.
  • the semiconductor light-emitting element 30 and the first capacitor 42 are spaced apart from each other in the Y direction.
  • the first capacitor 42 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the first switching element 171 in the Y direction.
  • the first switching element 171 is disposed between the semiconductor light-emitting element 30 and the first capacitor 42 in the Y direction.
  • the first switching element 171 is disposed in a position overlapping the first light-emitting portion 33A and the third light-emitting portion 33C when viewed from the Y direction.
  • the first capacitor 42 is disposed in a position overlapping the first switching element 171 when viewed from the Y direction.
  • a plurality of first capacitors 42 (three in the fourth embodiment) are provided.
  • the plurality of first capacitors 42 are connected in parallel to each other.
  • the plurality of first capacitors 42 are arranged at a distance from each other in the X direction.
  • Each first capacitor 42 is arranged so as to straddle the third surface electrode 233E and the third wiring portion 231BC of the first surface electrode 231B in the Y direction.
  • Each first capacitor 42 is mounted on the third surface electrode 233E and the third wiring portion 231BC. More specifically, each first capacitor 42 is individually bonded to the third surface electrode 233E and the third wiring portion 231BC by the conductive bonding material SD.
  • the first electrode 42A is bonded to the third surface electrode 233E by the conductive bonding material SD.
  • the first electrode 42A is electrically connected to the third surface electrode 233E.
  • the first electrode 42A is electrically connected to the drain electrode 171D of the first switching element 171 via the third surface electrode 233E and the third surface electrode 233A.
  • the second electrode 42B is joined to the third wiring portion 231BC by a conductive bonding material SD. As a result, the second electrode 42B is electrically connected to the first surface electrode 231B.
  • the multiple first capacitors 42 are arranged on the third surface electrode 233E closer to the virtual center line VC in the Y direction.
  • the second switching element 181 of the fourth embodiment uses a horizontal transistor as in the third embodiment.
  • the number and shape of the drain electrodes 181D and source electrodes 181S of the second switching element 181 of the fourth embodiment and the shape of the gate electrode 181G are different from those of the third embodiment. More specifically, one drain electrode 181D is provided.
  • the drain electrode 181D is formed in a rectangular shape with the Y direction as the long side and the X direction as the short side in a plan view.
  • a plurality of source electrodes 181S (two in the fourth embodiment) are provided. The plurality of source electrodes 181S are distributed and disposed on both sides of the drain electrode 181D in the X direction.
  • the source electrode 181S closer to the virtual center line VC is formed in a rectangular shape with the Y direction as the long side and the X direction as the short side in a plan view.
  • Another source electrode 181S is formed in a substantially square shape in a plan view.
  • the gate electrode 181G is disposed at the same position in the X direction as the other source electrode 181S, and closer to the third substrate side surface 25 in the Y direction than the source electrode 181S.
  • the gate electrode 181G is formed in a substantially square shape in a plan view.
  • the second switching element 181 is formed in a rectangular shape with the X direction as the long side direction and the Y direction as the short side direction in a plan view.
  • the second switching element 181 is mounted on the second surface electrode 232B, the third surface electrode 233B, and the fourth surface electrode 234B. More specifically, each drain electrode 181D of the second switching element 181 is joined to the third surface electrode 233B by a conductive bonding material SD (not shown). Each source electrode 181S is joined to the second surface electrode 232B by a conductive bonding material SD (not shown). The gate electrode 181G is joined to the fourth surface electrode 234B by a conductive bonding material SD (not shown). In this way, the drain electrode 181D is electrically connected to the second surface electrode 232B, the source electrode 181S is electrically connected to the third surface electrode 233B, and the gate electrode 181G is electrically connected to the fourth surface electrode 234B.
  • the semiconductor light-emitting element 30 and the second capacitor 52 are spaced apart from each other in the Y direction.
  • the second capacitor 52 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the second switching element 181 in the Y direction.
  • the second switching element 181 is disposed between the semiconductor light-emitting element 30 and the second capacitor 52 in the Y direction.
  • the second switching element 181 is disposed in a position overlapping with the second light-emitting portion 33B and the fourth light-emitting portion 33D when viewed from the Y direction.
  • the second capacitor 52 is disposed in a position overlapping with the second switching element 181 when viewed from the Y direction.
  • the distance D1 between the semiconductor light-emitting element 30 and the first switching element 171 in the Y direction is equal to the distance D2 between the semiconductor light-emitting element 30 and the second switching element 181 in the Y direction.
  • the difference between the distances D1 and D2 is, for example, within 10% of the distance D1, then it can be said that the distance D1 is equal to the distance D2.
  • a plurality of second capacitors 52 are provided.
  • the plurality of second capacitors 52 are arranged at a distance from each other in the X direction.
  • Each second capacitor 52 is arranged to straddle the third surface electrode 233F and the third wiring portion 231BC of the first surface electrode 231B in the Y direction.
  • Each second capacitor 52 is mounted on the third surface electrode 233F and the third wiring portion 231BC. More specifically, each second capacitor 52 is individually bonded to the third surface electrode 233F and the third wiring portion 231BC by a conductive bonding material SD (not shown).
  • the first electrode 52A is bonded to the third surface electrode 233F by a conductive bonding material SD (not shown).
  • the first electrode 52A is electrically connected to the third surface electrode 233F.
  • the first electrode 52A is electrically connected to the drain electrode 181D of the second switching element 181 via the third surface electrode 233F and the third surface electrode 233B.
  • the second electrode 52B is joined to the third wiring portion 231BC by a conductive bonding material SD (not shown).
  • the second electrode 52B is electrically connected to the first surface electrode 231B.
  • the multiple second capacitors 52 are arranged on the third surface electrode 233F closer to the virtual center line VC in the Y direction.
  • the third switching element 221 is a horizontal transistor.
  • the third switching element 221 has the same configuration as the second switching element 181.
  • the third switching element 221 includes a second element front surface 221A and a second element back surface (not shown) facing opposite sides in the Z direction.
  • a drain electrode 221D, a source electrode 221S, and a gate electrode 221G are formed on the second element back surface.
  • the number, shape, and arrangement of the drain electrode 221D, the source electrode 221S, and the gate electrode 221G are the same as those of the drain electrode 181D, the source electrode 181S, and the gate electrode 181G of the second switching element 181.
  • the third switching element 221 is formed in a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction.
  • the third switching element 221 is mounted on the second surface electrode 232C, the third surface electrode 233C, and the fourth surface electrode 234C. More specifically, each drain electrode 221D of the third switching element 221 is joined to the third surface electrode 233C by a conductive bonding material SD (not shown). Each source electrode 221S is joined to the second surface electrode 232C by a conductive bonding material SD (not shown). The gate electrode 221G is joined to the fourth surface electrode 234C by a conductive bonding material SD (not shown). In this way, the drain electrode 221D is electrically connected to the third surface electrode 233C, the source electrode 221S is electrically connected to the second surface electrode 232C, and the gate electrode 221G is electrically connected to the fourth surface electrode 234C.
  • the semiconductor light-emitting element 30 and the third switching element 221 are spaced apart from each other in the X direction.
  • the third switching element 221 is disposed closer to the first substrate side surface 23 than the semiconductor light-emitting element 30 in the X direction.
  • the third switching element 221 is disposed in a position overlapping the semiconductor light-emitting element 30.
  • the semiconductor light-emitting element 30 and the third capacitor 112 are arranged spaced apart from each other in the X direction.
  • the third capacitor 112 is arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the third switching element 221 in the X direction.
  • the third switching element 221 is arranged between the semiconductor light-emitting element 30 and the third capacitor 112 in the X direction.
  • the third capacitor 112 is arranged in a position overlapping with the third switching element 221 when viewed from the X direction.
  • a plurality of third capacitors 112 (three in the fourth embodiment) are provided.
  • the plurality of third capacitors 112 are connected in parallel to each other.
  • the plurality of third capacitors 112 are arranged at a distance from each other in the Y direction.
  • Each third capacitor 112 is arranged so as to straddle the third surface electrode 233G and the first wiring portion 231BA of the first surface electrode 231B in the X direction.
  • Each third capacitor 112 is mounted on the third surface electrode 233G and the first wiring portion 231BA. More specifically, each third capacitor 112 is individually bonded to the third surface electrode 233G and the first wiring portion 231BA by a conductive bonding material SD (not shown).
  • a conductive bonding material SD not shown.
  • the first electrode 112A is bonded to the third surface electrode 233G by a conductive bonding material SD (not shown). As a result, the first electrode 112A is electrically connected to the third surface electrode 233G.
  • the first electrode 112A is electrically connected to the drain electrode 221D of the third switching element 221 via the third surface electrode 233G and the third surface electrode 233C.
  • the second electrode 112B is joined to the first wiring portion 231BA by a conductive bonding material SD (not shown). As a result, the second electrode 112B is electrically connected to the first surface electrode 231B.
  • the third switching element 221 is a horizontal transistor.
  • the fourth switching element 222 has the same configuration as the first switching element 171.
  • the fourth switching element 222 includes a second element front surface 222A and a second element back surface (not shown) facing opposite sides in the Z direction.
  • a drain electrode 222D, a source electrode 222S, and a gate electrode 222G are formed on the second element back surface.
  • the number, shape, and arrangement of the drain electrode 222D, the source electrode 222S, and the gate electrode 222G are the same as those of the drain electrode 171D, the source electrode 171S, and the gate electrode 171G of the first switching element 171.
  • the fourth switching element 222 is formed in a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction.
  • the fourth switching element 222 is mounted on the second surface electrode 232D, the third surface electrode 233D, and the fourth surface electrode 234D. More specifically, each drain electrode 222D of the fourth switching element 222 is joined to the third surface electrode 233D by a conductive bonding material SD (not shown). Each source electrode 222S is joined to the second surface electrode 232D by a conductive bonding material SD (not shown). The gate electrode 222G is joined to the fourth surface electrode 234D by a conductive bonding material SD (not shown). In this way, the drain electrode 222D is electrically connected to the third surface electrode 233D, the source electrode 222S is electrically connected to the second surface electrode 232D, and the gate electrode 222G is electrically connected to the fourth surface electrode 234D.
  • the semiconductor light-emitting element 30 and the fourth switching element 222 are spaced apart from each other in the X direction.
  • the fourth switching element 222 is disposed closer to the second substrate side surface 24 than the semiconductor light-emitting element 30 in the X direction.
  • the fourth switching element 222 is disposed in a position overlapping the semiconductor light-emitting element 30.
  • the semiconductor light-emitting element 30 and the fourth capacitor 122 are spaced apart from each other in the X direction.
  • the fourth capacitor 122 is disposed on the opposite side of the semiconductor light-emitting element 30 from the fourth switching element 222 in the X direction.
  • the fourth switching element 222 is disposed between the semiconductor light-emitting element 30 and the fourth capacitor 122 in the X direction.
  • the fourth capacitor 122 is disposed in a position that overlaps with the fourth switching element 222 when viewed from the X direction.
  • the distance D3 between the semiconductor light-emitting element 30 and the third switching element 221 in the X direction is equal to the distance D4 between the semiconductor light-emitting element 30 and the fourth switching element 222 in the X direction.
  • the difference between the distances D3 and D4 is, for example, within 10% of the distance D3, then it can be said that the distance D3 is equal to the distance D4.
  • a plurality of fourth capacitors 122 (three in the fourth embodiment) are provided.
  • the plurality of fourth capacitors 122 are connected in parallel with each other.
  • the plurality of fourth capacitors 122 are arranged at a distance from each other in the Y direction.
  • Each fourth capacitor 122 is arranged so as to straddle the third surface electrode 233H and the second wiring portion 231BB of the first surface electrode 231B in the X direction.
  • Each fourth capacitor 122 is mounted on the third surface electrode 233H and the second wiring portion 231BB. More specifically, each fourth capacitor 122 is individually bonded to the third surface electrode 233H and the second wiring portion 231BB by a conductive bonding material SD (not shown).
  • a conductive bonding material SD not shown.
  • the first electrode 122A is bonded to the third surface electrode 233H by a conductive bonding material SD (not shown). As a result, the first electrode 122A is electrically connected to the third surface electrode 233H.
  • the first electrode 122A is electrically connected to the drain electrode 222D of the fourth switching element 222 via the third surface electrode 233H and the third surface electrode 233D.
  • the second electrode 122B is joined to the second wiring portion 231BB by a conductive bonding material SD (not shown). As a result, the second electrode 122B is electrically connected to the first surface electrode 231B.
  • the semiconductor light emitting device 10 further includes first to fourth protection diodes 101 to 104.
  • the first protection diode 101 is a diode that protects the first light emitting portion 33A of the semiconductor light emitting element 30.
  • the first protection diode 101 is disposed closer to the first substrate side surface 23 than the semiconductor light emitting element 30, the first switching element 171, and the plurality of first capacitors 42 in the X direction.
  • the first protection diode 101 is disposed at a position overlapping with the third switching element 221 when viewed from the Y direction.
  • the first protection diode 101 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the first switching element 171 in the Y direction.
  • the first protection diode 101 is disposed at a position overlapping with the first capacitor 42 when viewed from the X direction.
  • the first protection diode 101 is disposed so as to straddle the Y direction between the second surface electrode 232A and the third wiring portion 231BC of the first surface electrode 231B.
  • the first protection diode 101 is disposed such that the first anode electrode 101A and the first cathode electrode 101B are at the same position in the X direction and spaced apart from each other in the Y direction.
  • the first protection diode 101 is mounted on the second surface electrode 232A and the first surface electrode 231B. More specifically, the first protection diode 101 is individually bonded to the second surface electrode 232A and the first surface electrode 231B by a conductive bonding material SD (not shown).
  • the first protection diode 101 is connected in inverse parallel to the first light emitting portion 33A. More specifically, the first anode electrode 101A is bonded to the first surface electrode 231B by a conductive bonding material SD (not shown). The first anode electrode 101A is disposed on the third wiring portion 231BC of the first surface electrode 231B. As a result, the first anode electrode 101A and the element back surface electrode 35 of the semiconductor light emitting element 30 are electrically connected via the first surface electrode 231B. The first cathode electrode 101B is bonded to the second surface electrode 232A by a conductive bonding material SD (not shown).
  • the first cathode electrode 101B is electrically connected to a plurality of first element surface electrodes 34A corresponding to the first light emitting portion 33A of the semiconductor light emitting element 30 via the wire W5 and the second surface electrode 232A.
  • the second protection diode 102 is a diode that protects the second light-emitting portion 33B of the semiconductor light-emitting element 30.
  • the second protection diode 102 is disposed closer to the second substrate side surface 24 in the X direction than the semiconductor light-emitting element 30, the second switching element 181, and the multiple second capacitors 52.
  • the second protection diode 102 is disposed at a position overlapping with the fourth switching element 222 when viewed from the Y direction.
  • the second protection diode 102 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the second switching element 181 in the Y direction.
  • the second protection diode 102 is disposed at a position overlapping with the second capacitor 52 when viewed from the X direction.
  • the second protection diode 102 is disposed so as to straddle the Y direction between the second surface electrode 232B and the third wiring portion 231BC of the first surface electrode 231B.
  • the second protection diode 102 is mounted on the second surface electrode 232B and the first surface electrode 231B.
  • the implementation of the second protection diode 102 is the same as that of the first protection diode 101.
  • the second protection diode 102 is connected in inverse parallel to the second light emitting portion 33B. More specifically, the second anode electrode 102A is bonded to the third wiring portion 231BC of the first surface electrode 231B by a conductive bonding material SD (not shown). This electrically connects the second anode electrode 102A and the element back surface electrode 35 of the semiconductor light emitting element 30 via the first surface electrode 231B.
  • the second cathode electrode 102B is bonded to the second surface electrode 232B by a conductive bonding material SD (not shown). This electrically connects the second cathode electrode 102B to a plurality of second element surface electrodes 34B corresponding to the second light emitting portion 33B of the semiconductor light emitting element 30 via the wire W5 and the second surface electrode 232B.
  • the third protection diode 103 is a diode that protects the third light-emitting portion 33C of the semiconductor light-emitting element 30.
  • the third protection diode 103 is disposed closer to the fourth substrate side surface 26 in the Y direction than the semiconductor light-emitting element 30, the third switching element 221, and the third capacitors 112.
  • the third protection diode 103 is disposed at a position overlapping the first switching element 171 when viewed from the X direction.
  • the third protection diode 103 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the third switching element 221 in the X direction.
  • the third protection diode 103 is disposed at a position overlapping the third capacitor 112 when viewed from the Y direction.
  • the third protection diode 103 is disposed so as to straddle the X direction between the second surface electrode 232C and the first wiring portion 231BA of the first surface electrode 231B.
  • the third protection diode 103 is arranged such that the third anode electrode 103A and the third cathode electrode 103B are at the same position in the Y direction and spaced apart from each other in the X direction.
  • the third protection diode 103 is mounted on the second surface electrode 232C and the first surface electrode 231B. More specifically, the third protection diode 103 is individually bonded to the second surface electrode 232C and the first surface electrode 231B by a conductive bonding material SD (not shown).
  • the third protection diode 103 is connected in inverse parallel to the third light emitting portion 33C. More specifically, the third anode electrode 103A is bonded to the first surface electrode 231B by a conductive bonding material SD (not shown). The third anode electrode 103A is disposed on the first wiring portion 231BA of the first surface electrode 231B. As a result, the third anode electrode 103A and the element back surface electrode 35 of the semiconductor light emitting element 30 are electrically connected via the first surface electrode 231B. The third cathode electrode 103B is bonded to the second surface electrode 232C by a conductive bonding material SD (not shown).
  • the third cathode electrode 103B is electrically connected to a plurality of third element surface electrodes 34C corresponding to the third light emitting portion 33C of the semiconductor light emitting element 30 via the wire W5 and the second surface electrode 232C.
  • the fourth protection diode 104 is a diode that protects the fourth light-emitting portion 33D of the semiconductor light-emitting element 30.
  • the fourth protection diode 104 is disposed closer to the fourth substrate side surface 26 in the Y direction than the semiconductor light-emitting element 30, the fourth switching element 222, and the plurality of fourth capacitors 122.
  • the fourth protection diode 104 is disposed at a position overlapping the second switching element 181 when viewed from the X direction.
  • the fourth protection diode 104 is disposed on the opposite side of the semiconductor light-emitting element 30 with respect to the fourth switching element 222 in the X direction.
  • the fourth protection diode 104 is disposed at a position overlapping the fourth capacitor 122 when viewed from the Y direction.
  • the fourth protection diode 104 is disposed so as to straddle the X direction between the second surface electrode 232D and the second wiring portion 231BB of the first surface electrode 231B.
  • the fourth protection diode 104 is arranged such that the fourth anode electrode 104A and the fourth cathode electrode 104B are at the same position in the Y direction and spaced apart from each other in the X direction.
  • the fourth protection diode 104 is mounted on the second surface electrode 232D and the first surface electrode 231B. More specifically, the fourth protection diode 104 is individually bonded to the second surface electrode 232D and the first surface electrode 231B by a conductive bonding material SD (not shown).
  • the fourth protection diode 104 is connected in inverse parallel to the fourth light emitting portion 33D. More specifically, the fourth anode electrode 104A is bonded to the first surface electrode 231B by a conductive bonding material SD (not shown). The fourth anode electrode 104A is disposed on the second wiring portion 231BB of the first surface electrode 231B. This electrically connects the fourth anode electrode 104A and the element back surface electrode 35 of the semiconductor light emitting element 30 via the first surface electrode 231B. The fourth cathode electrode 104B is bonded to the second surface electrode 232D by a conductive bonding material SD (not shown).
  • the first to fourth anode electrodes 101A to 104A of the first to fourth protection diodes 101 to 104 are electrically connected to each other via the first surface electrode 231B.
  • the third switching element 221 includes a source electrode 221S, a drain electrode 221D, and a gate electrode 221G formed on the back surface of the second element.
  • the fourth switching element 222 includes a source electrode 222S, a drain electrode 222D, and a gate electrode 222G formed on the back surface of the second element.
  • the source electrode 221S, the drain electrode 221D, and the gate electrode 221G of the third switching element 221 are mounted on a plurality of surface electrodes 28A.
  • the source electrode 222S, the drain electrode 222D, and the gate electrode 222G of the fourth switching element 222 are mounted on a plurality of surface electrodes 28A.
  • the third switching element 221 is formed in a rectangular shape with its longitudinal direction in the Y direction and its transverse direction in the X direction in a plan view.
  • the fourth switching element 222 is formed in a rectangular shape with its longitudinal direction in the Y direction and its transverse direction in the X direction in a plan view.
  • the direction (Y direction) perpendicular to the arrangement direction (X direction) of the semiconductor light-emitting element 30, the third switching element 221, and the third capacitor 112 is the longitudinal direction of the third switching element 221, so the distance between the semiconductor light-emitting element 30 and the third capacitor 112 in the X direction can be shortened compared to a configuration in which the arrangement direction is the longitudinal direction of the third switching element 221. This makes it possible to shorten the loop-shaped third current path formed by the semiconductor light-emitting element 30, the third switching element 221, and the third capacitor 112.
  • the direction (Y direction) perpendicular to the arrangement direction (X direction) of the semiconductor light-emitting element 30, the fourth switching element 222, and the fourth capacitor 122 is the longitudinal direction of the fourth switching element 222, so the distance between the semiconductor light-emitting element 30 and the fourth capacitor 122 in the X direction can be shortened compared to a configuration in which the arrangement direction is the longitudinal direction of the fourth switching element 222. This makes it possible to shorten the loop-shaped fourth current path formed by the semiconductor light-emitting element 30, the fourth switching element 222, and the fourth capacitor 122.
  • the semiconductor light emitting device 10 is provided on the substrate 20 and includes first vias 251A-251F, second vias 252A-252D, third vias 253A-253H, and fourth vias 254A-254D as a plurality of vias that connect the plurality of back electrodes 28B and the plurality of front electrodes 28A.
  • the third current path between the third light emitting portion 33C of the semiconductor light emitting element 30 and the third driving circuit 110 is composed of the first front electrodes 231A, 231B, the second front electrode 232C, the third front electrodes 233C, 233G, the fourth front electrode 234C, the first back electrode 241A, the first vias 251A, 251B, and the third via 253C.
  • the fourth current path between the fourth light emitting unit 33D of the semiconductor light emitting element 30 and the fourth driving circuit 120 is composed of the first surface electrodes 231A, 231B, the second surface electrode 232D, the third surface electrodes 233D, 233H, the fourth surface electrode 234D, the first back surface electrode 241A, the first vias 251A, 251C, and the third via 253D.
  • a part of the loop of the third current path in which a current flows in the order of the first electrode 112A of the third capacitor 112, the drain electrode 221D and source electrode 221S of the third switching element 221, the third element surface electrode 34C and element back electrode 35 of the semiconductor light emitting element 30, and the second electrode 112B of the third capacitor 112 is formed by the first back electrode 241A. Therefore, the loop of the third current path can be made small, and the inductance of the third current path can be reduced.
  • a part of the loop of the fourth current path in which a current flows in the order of the first electrode 122A of the fourth capacitor 122, the drain electrode 222D and source electrode 222S of the fourth switching element 222, the fourth element surface electrode 34D and element back electrode 35 of the semiconductor light emitting element 30, and the second electrode 122B of the fourth capacitor 122 is formed by the first back electrode 241A. Therefore, the loop of the fourth current path can be made small, and the inductance of the fourth current path can be reduced.
  • the first to fourth switching elements 171, 181, 221, and 222 are made of horizontal transistors having the same configuration. According to this configuration, the semiconductor light emitting device 10 uses only one type of switching element, so the manufacturing costs of the semiconductor light emitting device 10 can be reduced compared to when multiple types of switching elements are used.
  • FIG. 20 shows a schematic circuit configuration of a light emitting system 800 including a semiconductor light emitting device 10 of the fifth embodiment.
  • FIG. 21 shows a schematic planar structure of the semiconductor light emitting device 10 of the fifth embodiment.
  • FIG. 22 shows a schematic back surface structure of the semiconductor light emitting device 10 of FIG. 21.
  • FIG. 23 shows a schematic planar structure of the front side intermediate electrode 28C of the semiconductor light emitting device 10 of FIG. 21.
  • FIG. 24 shows a schematic planar structure of an enlarged portion between the virtual center line VC and the first substrate side surface 23 of the semiconductor light emitting device 10 of FIG. 21.
  • FIG. 25 shows a schematic planar structure of an enlarged portion between the virtual center line VC and the second substrate side surface 24 of the semiconductor light emitting device 10 of FIG. 21.
  • FIG. 26 shows a schematic planar structure of an enlarged portion of a light emitting switching element 291 (described later) and its periphery of the semiconductor light emitting device 10 of FIG. 21.
  • the light-emitting system 800 includes a DC power supply 801, a capacitor 802, and a current limiting resistor 803, similar to the first embodiment. Unlike the first embodiment, the light-emitting system 800 includes a gate driver IC 292 instead of the gate driver IC 805, the pulse generator 806, and the control power supply 807 (all of which are shown in FIG. 5). The light-emitting system 800 also includes first to fourth charging switching elements 808A to 808D.
  • the first to fourth charging switching elements 808A to 808D are switching elements that control the current supplied to the first to fourth light emitting portions 33A to 33D of the semiconductor light emitting element 30 of the semiconductor light emitting device 10, and may be, for example, MOSFETs.
  • the drain electrodes of the first to fourth charging switching elements 808A to 808D are electrically connected to each other and to the second terminal of the current limiting resistor 803.
  • the first terminal of the current limiting resistor 803 is electrically connected to the positive electrode of the DC power supply 801.
  • the semiconductor light-emitting element 30 of the fifth embodiment includes first to fourth light-emitting portions 33A to 33D.
  • the semiconductor light-emitting element 30 includes eight light-emitting portions 33 (see FIG. 21).
  • Each of the first to fourth light-emitting portions 33A to 33D includes two light-emitting portions 33.
  • the cathodes of the first to fourth light-emitting portions 33A to 33D are electrically connected to each other.
  • the semiconductor light-emitting element 30 includes an element back electrode 35 that serves as a common cathode.
  • the semiconductor light-emitting device 10 includes first to fourth reverse current prevention diodes 261 to 264 and first to fourth capacitors 271 to 274 that are individually electrically connected to the first to fourth charging switching elements 808A to 808D, first to fourth protection diodes 281 to 284, a light-emitting switching element 291, a gate driver IC 292, and a capacitor 293.
  • the first to fourth reverse current prevention diodes 261 to 264 are individually electrically connected to the source electrodes of the first to fourth charging switching elements 808A to 808D.
  • the first to fourth reverse current prevention diodes 261 to 264 are also individually electrically connected to the first to fourth light emitting units 33A to 33D. More specifically, the first anode of the first reverse current prevention diode 261 is electrically connected to the source electrode of the first charging switching element 808A, and the first cathode of the first reverse current prevention diode 261 is electrically connected to the anode of the first light emitting unit 33A.
  • the second anode of the second reverse current prevention diode 262 is electrically connected to the source electrode of the second charging switching element 808B, and the second cathode of the second reverse current prevention diode 262 is electrically connected to the anode of the second light emitting unit 33B.
  • the third anode of the third reverse current prevention diode 263 is electrically connected to the source electrode of the third charging switching element 808C, and the third cathode of the third reverse current prevention diode 263 is electrically connected to the anode of the third light emitting portion 33C.
  • the fourth anode of the fourth reverse current prevention diode 264 is electrically connected to the source electrode of the fourth charging switching element 808D, and the fourth cathode of the fourth reverse current prevention diode 264 is electrically connected to the anode of the fourth light emitting portion 33D.
  • the first to fourth protection diodes 281 to 284 are individually connected in inverse parallel to the first to fourth light-emitting sections 33A to 33D. More specifically, the first protection cathode of the first protection diode 281 is electrically connected to the anode of the first light-emitting section 33A, the second protection cathode of the second protection diode 282 is electrically connected to the anode of the second light-emitting section 33B, the third protection cathode of the third protection diode 283 is electrically connected to the anode of the third light-emitting section 33C, and the fourth protection cathode of the fourth protection diode 284 is electrically connected to the anode of the fourth light-emitting section 33D.
  • the first to fourth protection anodes of the first to fourth protection diodes 281 to 284 are electrically connected to each other and to the common cathode of the first to fourth light-emitting sections 33A to 33D. It can also be said that the first to fourth cathodes of the first to fourth protection diodes 281 are individually electrically connected to the first to fourth cathodes of the first to fourth reverse current prevention diodes 261 to 264.
  • the cathodes (element back surface electrodes 35) of the first to fourth light-emitting portions 33A to 33D are electrically connected to the drain electrode of the light-emitting switching element 291. Therefore, it can be said that the first to fourth protective anodes, which are the common anodes of the first to fourth protective diodes 281 to 284, are electrically connected to the drain electrode of the light-emitting switching element 291.
  • the source electrode of the light-emitting switching element 291 is electrically connected to the ground wiring.
  • the ground wiring is electrically connected to the negative pole of the DC power supply 801, for example, and is also grounded.
  • the first to fourth capacitors 271 to 274 are capacitors that supply current to the first to fourth light-emitting parts 33A to 33D individually.
  • the first to fourth capacitors 271 to 274 are individually electrically connected to the nodes between the source electrodes of the first to fourth charging switching elements 808A to 808D and the first to fourth anodes of the first to fourth reverse current prevention diodes 261 to 264, and the first to fourth capacitors 271 to 274 are electrically connected to the ground wiring. More specifically, the first electrode of the first capacitor 271 is electrically connected to the node between the source electrode of the first charging switching element 808A and the first anode of the first reverse current prevention diode 261.
  • the first electrode of the second capacitor 272 is electrically connected to the node between the source electrode of the second charging switching element 808B and the second anode of the second reverse current prevention diode 262.
  • the first electrode of the third capacitor 273 is electrically connected to the node between the source electrode of the third charging switching element 808C and the third anode of the third reverse current prevention diode 263.
  • the first electrode of the fourth capacitor 274 is electrically connected to the node between the source electrode of the fourth charging switching element 808D and the fourth anode of the fourth reverse current prevention diode 264.
  • the second electrodes of the first to fourth capacitors 271 to 274 are electrically connected to each other and to the ground wiring. It can also be said that the second electrodes of the first to fourth capacitors 271 to 274 are electrically connected to the source electrode of the light emitting switching element 291.
  • the gate driver IC 292 is, for example, a semiconductor chip that controls the light-emitting switching element 291.
  • the gate driver IC 292 is electrically connected to the gate electrode of the light-emitting switching element 291.
  • the gate driver IC 292 is configured to output a gate signal that controls the light-emitting switching element 291 to the gate electrode of the light-emitting switching element 291.
  • the pulse generator 806 is electrically connected to the gate driver IC 292 and the ground wiring. Therefore, the pulse generator 806 outputs a pulse signal to the gate driver IC 292.
  • the control power supply 807 is electrically connected to the gate driver IC 292, the capacitor 293, and the ground wiring. Therefore, the control power supply 807 supplies power to the gate driver IC 292. Note that the control power supply 807 is provided outside the semiconductor light emitting device 10, similar to the pulse generator 806.
  • the control power supply 807 is electrically connected between the fourth back electrode 314 and the first back electrode 311B shown in FIG. 22.
  • the capacitor 293 is electrically connected between the power terminal of the gate driver IC 292 and the ground wiring, that is, between the sixth surface electrode 306 and the second wiring portion 301BB of the first surface electrode 301B.
  • the light emitting system 800 also includes an external control unit (not shown) that individually controls the first to fourth charging switching elements 808A to 808D.
  • the external control unit is electrically connected to the gate electrodes of the first to fourth charging switching elements 808A to 808D.
  • the external control unit is configured to output a first gate signal that controls the first charging switching element 808A to the gate electrode of the first charging switching element 808A.
  • the external control unit is configured to output a second gate signal that controls the second charging switching element 808B to the gate electrode of the second charging switching element 808B.
  • the external control unit is configured to output a third gate signal that controls the third charging switching element 808C to the gate electrode of the third charging switching element 808C.
  • the external control unit is configured to output a fourth gate signal that controls the fourth charging switching element 808D to the gate electrode of the fourth charging switching element 808D.
  • a light-emitting system 800 for example, when the first charging switching element 808A is turned on and the light-emitting switching element 291 is turned off, the first capacitor 271 is charged. When the first charging switching element 808A is turned off and the light-emitting switching element 291 is turned on, a current is supplied from the first capacitor 271 to the first light-emitting unit 33A via the first reverse current prevention diode 261.
  • the second to fourth charging switching elements 808B to 808D charge and discharge the second to fourth capacitors 272 to 274 by turning the second to fourth charging switching elements 808B to 808D on and off, so that a current is supplied individually to the second to fourth light-emitting units 33B to 33D via the second to fourth reverse current prevention diodes 262 to 264.
  • the first to fourth charging switching elements 808A to 808D, the first to fourth capacitors 271 to 274, and the light-emitting switching element 291 cause the first to fourth light-emitting units 33A to 33D to emit light individually.
  • the first to fourth reverse current prevention diodes 261 to 264, the first to fourth capacitors 271 to 274, the first to fourth protection diodes 281 to 284, the light-emitting switching element 291, the gate driver IC 292, and the capacitor 293 are arranged on the substrate surface 21.
  • Each of the first to fourth reverse current prevention diodes 261 to 264, the first to fourth capacitors 271 to 274, the first to fourth protection diodes 281 to 284, the light-emitting switching element 291, the gate driver IC 292, and the capacitor 293 is mounted on a plurality of surface electrodes 28A.
  • the semiconductor light emitting device 10 of the fifth embodiment includes first to fourth drive circuits 40, 50, 110, and 120.
  • the first drive circuit 40 includes a first capacitor 271
  • the second drive circuit 50 includes a second capacitor 272
  • the third drive circuit 110 includes a third capacitor 273
  • the fourth drive circuit 120 includes a fourth capacitor 274.
  • the multiple surface electrodes 28A include first surface electrodes 301A, 301B, second surface electrodes 302A-302D, third surface electrodes 303A-303D, fourth surface electrode 304, fifth surface electrode 305, sixth surface electrode 306, and seventh surface electrode 307.
  • the first surface electrodes 301A, 301B, second surface electrodes 302A-302D, third surface electrodes 303A-303D, fourth surface electrode 304, fifth surface electrode 305, sixth surface electrode 306, and seventh surface electrode 307 are arranged at a distance from each other.
  • the first surface electrode 301A is a surface electrode on which the semiconductor light emitting element 30 is mounted.
  • the first surface electrode 301A is disposed near the third substrate side surface 25 of the substrate surface 21 in a plan view and at the center of the substrate surface 21 in the X direction.
  • the first surface electrode 301A is formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the first surface electrode 301A is symmetrical about the imaginary center line VC.
  • the first surface electrode 301B is a surface electrode that constitutes the ground wiring.
  • the first surface electrode 301B is formed in an approximately U-shape on the outer periphery of the substrate surface 21.
  • the first surface electrode 301B is disposed away from the first surface electrode 301A toward the fourth substrate side surface 26 in the Y direction.
  • the first surface electrode 301B includes a first wiring portion 301BA formed along the first substrate side surface 23, a second wiring portion 301BB formed along the second substrate side surface 24, and a third wiring portion 301BC formed along the fourth substrate side surface 26.
  • the first wiring portion 301BA, the second wiring portion 301BB, and the third wiring portion 301BC are integrated.
  • the first surface electrode 301B is symmetrical about the virtual center line VC.
  • the tip of the first wiring portion 301BA and the tip of the second wiring portion 301BB are positioned closer to the fourth substrate side surface 26 than the first surface electrode 301A in the Y direction.
  • the area of the first surface electrode 301B is larger than the area of each of the first surface electrode 301A, the second surface electrodes 302A-302D, the third surface electrodes 303A-303D, the fourth surface electrode 304, the fifth surface electrode 305, the sixth surface electrode 306, and the seventh surface electrode 307.
  • the area of the first surface electrode 301B is greater than or equal to the combined area of the first surface electrode 301A, the second surface electrodes 302A-302D, the third surface electrodes 303A-303D, the fourth surface electrode 304, the fifth surface electrode 305, the sixth surface electrode 306, and the seventh surface electrode 307.
  • the second surface electrodes 302A to 302D are arranged around the first surface electrode 301A.
  • the second surface electrodes 302A to 302D are arranged closer to the third substrate side surface 25 than the first surface electrode 301B in the Y direction.
  • the second surface electrodes 302A, 302B are arranged at a position overlapping with the first surface electrode 301A when viewed from the Y direction, and closer to the fourth substrate side surface 26 than the first surface electrode 301A in the Y direction.
  • the second surface electrodes 302A, 302B are arranged at a position adjacent to the first surface electrode 301A in the Y direction.
  • the second surface electrodes 302A, 302B are arranged distributed on both sides of the virtual center line VC in the X direction.
  • the second surface electrodes 302A, 302B are arranged at positions adjacent to each other in the X direction.
  • the second surface electrode 302A is disposed closer to the first substrate side surface 23 than the imaginary center line VC
  • the second surface electrode 302B is disposed closer to the second substrate side surface 24 than the imaginary center line VC.
  • the second surface electrodes 302A and 302B are disposed between the first wiring portion 301BA and the second wiring portion 301BB in the X direction.
  • the second surface electrodes 302A and 302B are formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the second surface electrodes 302A and 302B have the same size and shape.
  • the Y direction dimension of the second surface electrodes 302A and 302B is smaller than the Y direction dimension of the first surface electrode 301A.
  • the second surface electrodes 302C, 302D are disposed on both sides of the first surface electrode 301A in the X direction. When viewed from the X direction, the second surface electrodes 302C, 302D are disposed at positions overlapping the first surface electrode 301A. The second surface electrode 302C and the second surface electrode 302D are disposed at positions adjacent to the first surface electrode 301A in the X direction. The second surface electrode 302C is disposed closer to the first substrate side surface 23 than the first surface electrode 301A, and the second surface electrode 302D is disposed closer to the second substrate side surface 24 than the first surface electrode 301A.
  • the second surface electrodes 302C and 302D are formed in a rectangular shape with the X direction being the long side and the Y direction being the short side in a plan view.
  • the second surface electrodes 302C and 302D are equal in size.
  • the second surface electrodes 302C and 302D are in a line-symmetrical relationship with the virtual center line VC as the center.
  • the end of the second surface electrodes 302C and 302D in the X direction that is closer to the first surface electrode 301A has a protrusion that protrudes toward the fourth substrate side surface 26. In the example shown in FIG.
  • the tip edge of the protrusion of the second surface electrodes 302C and 302D is at the same position in the Y direction as the end edge of the first surface electrode 301A in the Y direction that is closer to the fourth substrate side surface 26.
  • the Y direction dimension of the second surface electrodes 302C and 302D is larger than the Y direction dimension of the second surface electrodes 302A and 302B.
  • the X-direction dimensions of the second surface electrodes 302C and 302D are greater than the X-direction dimensions of the second surface electrodes 302A and 302B.
  • the third surface electrodes 303A to 303D are disposed between the second surface electrodes 302A to 302D and the first surface electrode 301B in the Y direction.
  • the third surface electrodes 303A and 303B are disposed on both sides of the imaginary center line VC in the X direction.
  • the third surface electrode 303A is disposed at a position overlapping with the second surface electrode 302A when viewed from the Y direction, between the second surface electrode 302A and the third wiring portion 301BC of the first surface electrode 301B in the Y direction.
  • the third surface electrode 303B is disposed at a position overlapping with the second surface electrode 302B when viewed from the Y direction, between the second surface electrode 302B and the third wiring portion 301BC in the Y direction.
  • the third surface electrodes 303A and 303B are disposed in the recesses of the first surface electrode 301B.
  • the third surface electrodes 303A and 303B are formed in a rectangular shape with the X direction being the long side and the Y direction being the short side in a plan view.
  • the third surface electrodes 303A and 303B are equal in size.
  • the third surface electrodes 303A and 303B are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the X direction dimension of the third surface electrodes 303A and 303B is greater than the X direction dimension of the second surface electrodes 302A and 302B.
  • the third surface electrodes 303C and 303D are disposed outward from the recess of the first surface electrode 301B in the X direction.
  • the third surface electrodes 303C and 303D are disposed closer to the third substrate side surface 25 than the third surface electrodes 303A and 303B in the Y direction.
  • the third surface electrode 303C is arranged at a position overlapping the first wiring portion 301BA of the first surface electrode 301B when viewed from the Y direction, and is closer to the third substrate side surface 25 than the first wiring portion 301BA in the Y direction.
  • the third surface electrode 303C is arranged between the first wiring portion 301BA and the second surface electrode 302C in the Y direction.
  • the third surface electrode 303D is arranged at a position overlapping with the second wiring portion 301BB of the first surface electrode 301B when viewed from the Y direction, and is closer to the third substrate side surface 25 than the second wiring portion 301BB in the Y direction.
  • the third surface electrode 303D is arranged between the second wiring portion 301BB and the second surface electrode 302D in the Y direction.
  • the end of the third surface electrodes 303C, 303D in the Y direction that is closer to the third substrate side surface 25 is located slightly closer to the third substrate side surface 25 than the end edge of the first surface electrode 301A in the Y direction that is closer to the fourth substrate side surface 26.
  • the third surface electrodes 303C and 303D are formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the third surface electrodes 303C and 303D are equal in size.
  • the third surface electrodes 303C and 303D are in a line-symmetric relationship with respect to the imaginary center line VC. In the example shown in FIG. 21, the size of the third surface electrodes 303C and 303D is the same as the size of the third surface electrodes 303A and 303B.
  • the fourth to seventh surface electrodes 304 to 307 are arranged closer to the fourth substrate side surface 26 than the third surface electrodes 303A to 303D in the Y direction. More specifically, the third wiring portion 301BC of the first surface electrode 301B includes an opening 301BD. The opening 301BD is formed in the third wiring portion 301BC closer to the second substrate side surface 24. The fourth to seventh surface electrodes 304 to 307 are arranged within the opening 301BD.
  • the fourth surface electrode 304 is disposed closer to the first substrate side surface 23 in the X direction than the fifth to seventh surface electrodes 305 to 307.
  • the fourth surface electrode 304 is disposed on the imaginary center line VC.
  • the fourth surface electrode 304 is disposed in the center of the third wiring portion 301BC in the Y direction.
  • the fourth surface electrode 304 is formed in an elliptical shape with the Y direction being the long side and the X direction being the short side in a plan view.
  • the fifth surface electrode 305 includes a portion adjacent to the fourth surface electrode 304 in the X direction.
  • the fourth surface electrode 304 is surrounded by the third wiring portion 301BC in a plan view except for the portion adjacent to the fifth surface electrode 305.
  • the fifth surface electrode 305 is disposed closer to the third substrate side surface 25 than the center of the fourth surface electrode 304 in the Y direction.
  • the fifth surface electrode 305 is formed in a generally rectangular shape with the X direction being the long side and the Y direction being the short side in a plan view.
  • the portion of the fifth surface electrode 305 closer to the fourth surface electrode 304 in the X direction has a recessed portion formed to avoid the third wiring portion 301BC.
  • the third wiring portion 301BC is disposed on both sides of the fifth surface electrode 305 in the Y direction.
  • the sixth surface electrode 306 and the seventh surface electrode 307 are disposed closer to the second substrate side surface 24 than the fifth surface electrode 305.
  • the sixth surface electrode 306 is disposed at a position overlapping with the fifth surface electrode 305 when viewed from the X direction.
  • the seventh surface electrode 307 is disposed closer to the fourth substrate side surface 26 than the fifth surface electrode 305 in the Y direction.
  • the seventh surface electrode 307 is disposed at a position overlapping with the sixth surface electrode 306 when viewed from the Y direction.
  • the seventh surface electrode 307 is disposed spaced apart from the sixth surface electrode 306 in the Y direction.
  • the third wiring portion 301BC is partially located between the seventh surface electrode 307 and the sixth surface electrode 306 in the Y direction.
  • the sixth surface electrode 306, other than the end facing the fifth surface electrode 305 in the X direction, is surrounded by the third wiring portion 301BC in a plan view.
  • the sixth surface electrode 306 is formed in a rectangular shape with the X direction as the long side and the Y direction as the short side in a plan view.
  • the seventh surface electrode 307 is surrounded by the third wiring portion 301BC in a plan view. Therefore, a part of the third wiring portion 301BC is interposed between the seventh surface electrode 307 and the sixth surface electrode 306 in the Y direction.
  • the seventh surface electrode 307 is formed in a substantially L-shape in a plan view. More specifically, the seventh surface electrode 307 includes a first portion extending in the Y direction and a second portion extending from the first portion toward the second substrate side surface 24. The second portion is disposed closer to the fourth substrate side surface 26 than the first portion.
  • the multiple back electrodes 28B include first back electrodes 311A, 311B, second back electrodes 312A to 312D, third back electrode 313, fourth back electrode 314, and fifth back electrode 315.
  • the first back electrodes 311A, 311B, second back electrodes 312A to 312D, third back electrode 313, fourth back electrode 314, and fifth back electrode 315 are arranged at a distance from each other.
  • the first back surface electrode 311A is an electrode electrically connected to the first surface electrode 301A (see FIG. 21).
  • the first back surface electrode 311A is disposed at a position in the center of the substrate back surface 22 in the X direction and adjacent to the third substrate side surface 25 on the substrate back surface 22 in the Y direction. In other words, the first back surface electrode 311A is disposed at a position overlapping the first surface electrode 301A in a plan view.
  • the first back surface electrode 311A has a rectangular shape with the X direction as the long side and the Y direction as the short side in a plan view. In one example, the size of the first back surface electrode 311A is the same as the size of the first surface electrode 301A.
  • the first back surface electrode 311B is formed over most of the back surface 22 of the substrate.
  • the first back surface electrode 311B is formed in an area of the back surface 22 of the substrate other than the areas in which the first back surface electrode 311A, the second back surface electrodes 312A to 312D, the third back surface electrode 313, the fourth back surface electrode 314, and the fifth back surface electrode 315 are formed.
  • the first back surface electrode 311B includes a portion that surrounds the first back surface electrode 311A from the first substrate side surface 23, the second substrate side surface 24, and the fourth substrate side surface 26 in a plan view.
  • the area of the first back surface electrode 311B is larger than the total area of the first back surface electrode 311A, the second back surface electrodes 312A to 312D, the third back surface electrode 313, the fourth back surface electrode 314, and the fifth back surface electrode 315.
  • the second back surface electrode 312A is an electrode electrically connected to the third surface electrode 303A
  • the second back surface electrode 312B is an electrode electrically connected to the third surface electrode 303B
  • the second back surface electrode 312C is an electrode electrically connected to the third surface electrode 303C
  • the second back surface electrode 312D is an electrode electrically connected to the third surface electrode 303D.
  • the second back surface electrodes 312A to 312D are disposed closer to the third substrate side surface 25 than the center of the substrate back surface 22 in the Y direction.
  • the second back surface electrodes 312A-312D are electrodes that are individually and electrically connected to the sources of the first to fourth charging switching elements 808A-808D (see FIG. 20). More specifically, the second back surface electrode 312A is an electrode that is electrically connected to the source of the first charging switching element 808A, the second back surface electrode 312B is an electrode that is electrically connected to the source of the second charging switching element 808B, the second back surface electrode 312C is an electrode that is electrically connected to the source of the third charging switching element 808C, and the second back surface electrode 312D is an electrode that is electrically connected to the source of the fourth charging switching element 808D.
  • the second back electrodes 312A and 312B are disposed closer to the fourth substrate side surface 26 than the first back electrode 311A in the Y direction.
  • the second back electrodes 312A and 312B are disposed in a distributed manner on both sides of the virtual center line VC in the X direction.
  • the end closer to the virtual center line VC of both ends of the second back electrodes 312A and 312B in the X direction is disposed at a position overlapping with the first back electrode 311A when viewed from the Y direction.
  • the end closer to the virtual center line VC of both ends of the second back electrode 312A in the X direction is disposed at a position overlapping with the third surface electrode 303A in a plan view.
  • the end closer to the virtual center line VC of both ends of the second back electrode 312B in the X direction is disposed at a position overlapping with the third surface electrode 303B in a plan view.
  • the second back electrodes 312A and 312B are formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the second back electrodes 312A and 312B are the same size. In other words, the second back electrodes 312A and 312B are in a line-symmetric relationship with respect to the imaginary center line VC.
  • the second back electrodes 312C, 312D are arranged closer to the third substrate side surface 25 than the second back electrodes 312A, 312B in the Y direction.
  • the end of the second back electrodes 312C, 312D in the X direction that is closer to the third substrate side surface 25 is arranged at a position overlapping with the first back electrode 311A when viewed from the X direction.
  • the second back electrodes 312C, 312D are arranged in a distributed manner on both sides of the first back electrode 311A in the X direction. When viewed from the Y direction, the second back electrode 312C is arranged at a position overlapping with the end of the second back electrode 312A in the X direction that is closer to the first substrate side surface 23.
  • the second back electrode 312D When viewed from the Y direction, the second back electrode 312D is arranged at a position overlapping with the end of the second back electrode 312B in the X direction that is closer to the second substrate side surface 24.
  • the second back surface electrode 312C is disposed at an end of the substrate back surface 22 closer to the first substrate side surface 23 in the X direction.
  • the second back surface electrode 312D is disposed at an end of the substrate back surface 22 closer to the second substrate side surface 24 in the X direction.
  • the second back surface electrode 312C is disposed at a position overlapping with the third surface electrode 303C in a plan view.
  • the second back surface electrode 312D is disposed at a position overlapping with the third surface electrode 303D in a plan view.
  • the second back electrodes 312C and 312D are formed in a square shape in a plan view.
  • the area of the second back electrodes 312C and 312D is smaller than the area of the second back electrodes 312A and 312B.
  • the length in the X direction of the second back electrodes 312C and 312D is shorter than the length in the X direction of the second back electrodes 312A and 312B.
  • the third to fifth back electrodes 313 to 315 are arranged closer to the fourth substrate side surface 26 than the center of the substrate back surface 22 in the Y direction.
  • the fourth back electrode 314 and the fifth back electrode 315 are arranged closer to the second substrate side surface 24 than the third back electrode 313.
  • a plurality of third back electrodes 313 (two in the fifth embodiment) are provided.
  • the plurality of third back electrodes 313 are arranged at the same position in the X direction and spaced apart from each other in the Y direction.
  • the third back electrode 313 is an electrode electrically connected to the fourth surface electrode 304.
  • the plurality of third back electrodes 313 are arranged on the imaginary center line VC. In other words, the plurality of third back electrodes 313 are arranged at positions overlapping with the fourth surface electrode 304 in a plan view.
  • Each third back electrode 313 is formed in a circular shape in a plan view.
  • the fourth back surface electrode 314 is disposed at the same position in the Y direction as the third back surface electrode 313, which is closer to the third substrate side surface 25, of the two third back surface electrodes 313.
  • the fourth back surface electrode 314 is an electrode electrically connected to the sixth surface electrode 306.
  • the fourth back surface electrode 314 is disposed at a position overlapping with the sixth surface electrode 306 in a plan view.
  • the fourth back surface electrode 314 is disposed at a position overlapping with the second back surface electrode 312B when viewed from the Y direction.
  • a part of the first back surface electrode 311B is disposed between the fourth back surface electrode 314 and the second back surface electrode 312B in the Y direction.
  • the fourth back electrode 314 is formed in a rectangular shape with the X direction being the long side and the Y direction being the short side in a plan view.
  • the X direction length of the fourth back electrode 314 is shorter than the X direction length of the second back electrode 312C.
  • the fifth back surface electrode 315 is an electrode electrically connected to the seventh surface electrode 307.
  • the fifth back surface electrode 315 is arranged closer to the fourth substrate side surface 26 than the fourth back surface electrode 314 in the Y direction.
  • the fifth back surface electrode 315 is arranged at a position overlapping with the fourth back surface electrode 314 when viewed from the Y direction.
  • the fifth back surface electrode 315 is arranged at a position overlapping with the third back surface electrode 313 closer to the fourth substrate side surface 26 of the two third back surface electrodes 313 when viewed from the X direction.
  • the fifth back surface electrode 315 is arranged at a position separated from the second substrate side surface 24 in the X direction.
  • the distance between the fifth back surface electrode 315 and the second substrate side surface 24 in the X direction is greater than, for example, the distance between the second back surface electrode 312D and the second substrate side surface 24 in the X direction.
  • a portion of the first back surface electrode 311B is disposed both between the fifth back surface electrode 315 and the second substrate side surface 24 in the X direction, and between the fifth back surface electrode 315 and the fourth back surface electrode 314 in the Y direction.
  • the fifth back electrode 315 is formed in a rectangular shape with the Y direction being the long side and the X direction being the short side in a plan view.
  • the Y direction dimension of the fifth back electrode 315 is larger than the Y direction dimension of the fourth back electrode 314 and smaller than the X direction dimension of the fourth back electrode 314.
  • the multiple surface-side intermediate electrodes 28C include first intermediate electrodes 321A, 321B, second intermediate electrodes 322A-322D, third intermediate electrode 323, fourth intermediate electrode 324, and fifth intermediate electrode 325.
  • the first intermediate electrodes 321A, 321B, second intermediate electrodes 322A-322D, third intermediate electrode 323, fourth intermediate electrode 324, and fifth intermediate electrode 325 are arranged at a distance from each other.
  • the first intermediate electrodes 321A, 321B are formed over most of the substrate surface of the intermediate substrate 27C.
  • the first intermediate electrodes 321A, 321B include recesses and openings that avoid the second intermediate electrodes 322A-322D, the third intermediate electrode 323, the fourth intermediate electrode 324, and the fifth intermediate electrode 325.
  • the first intermediate electrode 321A is an electrode that electrically connects the first surface electrode 301A and the fourth surface electrode 304 (see FIG. 21 for both).
  • the first intermediate electrode 321A is disposed in the center of the intermediate substrate 27C in the X direction.
  • the first intermediate electrode 321A is formed in a rectangular shape with the Y direction being the long side direction in a plan view and the X direction being the short side direction.
  • the first intermediate electrode 321A extends in the Y direction from the end of the intermediate substrate 27C closer to the third substrate side surface 25 to a position where it overlaps with both the fourth surface electrode 304 and the third back surface electrode 313 in a plan view.
  • the first intermediate electrode 321B is an electrode electrically connected to the first surface electrode 301B (see FIG. 21).
  • the first intermediate electrode 321B is formed in a U-shape surrounding the first intermediate electrode 321A from the first, second, and fourth substrate side surfaces 23, 24, and 26 in a plan view.
  • the first intermediate electrode 321B includes a first wiring portion 321BA extending along the first substrate side surface 23, a second wiring portion 321BB extending along the second substrate side surface 24, and a third wiring portion 321BC connecting the first wiring portion 321BA and the second wiring portion 321BB.
  • the first wiring portion 321BA, the second wiring portion 321BB, and the third wiring portion 321BC are integrated.
  • the third wiring portion 321BC is disposed in a position adjacent to the fourth substrate side surface 26 in the Y direction.
  • the second intermediate electrode 322A is an electrode electrically connected to both the third surface electrode 303A (see FIG. 21) and the second back surface electrode 312A (see FIG. 22).
  • the second intermediate electrode 322B is an electrode electrically connected to both the third surface electrode 303B (see FIG. 21) and the second back surface electrode 312B (see FIG. 22).
  • the second intermediate electrode 322C is an electrode electrically connected to both the third surface electrode 303C (see FIG. 21) and the second back surface electrode 312C (see FIG. 22).
  • the second intermediate electrode 322D is an electrode electrically connected to both the third surface electrode 303D (see FIG. 21) and the second back surface electrode 312D (see FIG. 22).
  • the second intermediate electrodes 322A to 322D are arranged closer to the third substrate side surface 25 than the center of the intermediate substrate 27C in the Y direction.
  • the second intermediate electrode 322A is arranged between the first intermediate electrode 321A and the first wiring portion 321BA of the first intermediate electrode 321B in the X direction.
  • the second intermediate electrode 322B is arranged between the first intermediate electrode 321A and the second wiring portion 321BB of the first intermediate electrode 321B in the X direction.
  • the second intermediate electrode 322C is arranged in an approximately oval opening of the first wiring portion 321BA.
  • the second intermediate electrode 322D is arranged in an approximately oval opening of the second wiring portion 321BB.
  • the second intermediate electrodes 322C, 322D are arranged closer to the third substrate side surface 25 than the second intermediate electrodes 322A, 322B.
  • the second intermediate electrode 322A is arranged at a position overlapping both the third surface electrode 303A and the second back surface electrode 312A in a plan view.
  • the second intermediate electrode 322B is arranged at a position overlapping both the third surface electrode 303B and the second back surface electrode 312B in a plan view.
  • the second intermediate electrode 322C is arranged at a position overlapping both the third surface electrode 303C and the second back surface electrode 312C in a plan view.
  • the second intermediate electrode 322D is arranged at a position overlapping both the third surface electrode 303D and the second back surface electrode 312D in a plan view.
  • the second intermediate electrodes 322A to 322D are formed in an elliptical shape with the X direction being the long side and the Y direction being the short side in a plan view.
  • the third intermediate electrode 323 is an electrode electrically connected to both the first surface electrode 301B and the first back surface electrode 311B.
  • the third intermediate electrode 323 is arranged at a position overlapping both the first surface electrode 301B and the first back surface electrode 311B in a plan view.
  • the third intermediate electrode 323 is arranged in a circular opening provided at one of both ends of the first intermediate electrode 321A in the Y direction that is closer to the fourth substrate side surface 26.
  • the third intermediate electrode 323 is arranged closer to the second substrate side surface 24 than the imaginary center line VC.
  • the third intermediate electrode 323 is formed in a circular shape in a plan view.
  • the fourth intermediate electrode 324 is an electrode electrically connected to both the sixth surface electrode 306 (see FIG. 21) and the fourth back surface electrode 314 (see FIG. 22).
  • the fifth intermediate electrode 325 is an electrode electrically connected to both the seventh surface electrode 307 (see FIG. 21) and the fifth back surface electrode 315 (see FIG. 22).
  • the fourth intermediate electrode 324 is arranged at a position overlapping both the sixth surface electrode 306 and the fourth back surface electrode 314 in a plan view.
  • the fifth intermediate electrode 325 is arranged at a position overlapping both the seventh surface electrode 307 and the fifth back surface electrode 315 in a plan view.
  • the fourth intermediate electrode 324 and the fifth intermediate electrode 325 are individually arranged in two circular openings provided in the second wiring portion 321BB.
  • the fourth intermediate electrode 324 and the fifth intermediate electrode 325 are arranged at the same position in the X direction and spaced apart from each other in the Y direction.
  • the fourth intermediate electrode 324 is positioned closer to the third substrate side surface 25 than the fifth
  • the backside intermediate electrode 28D like the frontside intermediate electrode 28C, includes the first intermediate electrodes 321A, 321B, the second intermediate electrodes 322A-322D, the third intermediate electrode 323, the fourth intermediate electrode 324, and the fifth intermediate electrode 325.
  • the shapes, sizes, and arrangements of the first intermediate electrodes 321A, 321B, the second intermediate electrodes 322A-322D, the third intermediate electrode 323, the fourth intermediate electrode 324, and the fifth intermediate electrode 325 of the backside intermediate electrode 28D are the same as those of the frontside intermediate electrode 28C.
  • the substrate 20 includes first vias 331A to 331C, second vias 332A to 332D, third via 333, fourth via 334, and fifth via 335.
  • the first vias 331A to 331C, second vias 332A to 332D, third via 333, fourth via 334, and fifth via 335 are provided to penetrate the substrates 27A, 27B, 27C, front-side intermediate electrode 28C, and back-side intermediate electrode 28D in the Z direction.
  • the first vias 331A to 331C, second vias 332A to 332D, third via 333, fourth via 334, and fifth via 335 are formed from a material including one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the first via 331A is electrically connected to the first surface electrode 301A, the first intermediate electrode 321A of the surface-side intermediate electrode 28C, the first intermediate electrode 321A of the back-side intermediate electrode 28D, and the first back-side electrode 311A.
  • the first surface electrode 301A, the first intermediate electrode 321A of the surface-side intermediate electrode 28C, the first intermediate electrode 321A of the back-side intermediate electrode 28D, and the first back-side electrode 311A are electrically connected to each other.
  • a plurality of first vias 331A are provided.
  • the plurality of first vias 331A are provided on the first surface electrode 301A closer to the third substrate side surface 25. Therefore, in a plan view, the plurality of first vias 331A are arranged at positions on the first surface electrode 301A that overlap with the semiconductor light emitting element 30.
  • the plurality of first vias 331A are arranged at a distance from each other in the X direction and the Y direction.
  • the number of first vias 331A arranged in the X direction is greater than the number of first vias 331A arranged in the Y direction.
  • the area in which the plurality of first vias 331A are formed is greater than the area of the semiconductor light emitting element 30. Therefore, some of the plurality of first vias 331A are arranged outside the semiconductor light emitting element 30 in a plan view.
  • the first via 331B is electrically connected to the first surface electrode 301B, the first intermediate electrode 321B of the surface-side intermediate electrode 28C, the first intermediate electrode 321B of the back-side intermediate electrode 28D, and the first back-side electrode 311B.
  • the first surface electrode 301B, the first intermediate electrode 321B of the surface-side intermediate electrode 28C, the first intermediate electrode 321B of the back-side intermediate electrode 28D, and the first back-side electrode 311B are electrically connected to each other.
  • the first via 331C is electrically connected to the first surface electrode 301B, the third intermediate electrode 323 of the surface-side intermediate electrode 28C, the third intermediate electrode 323 of the back-side intermediate electrode 28D, and the first back-side electrode 311B.
  • the first surface electrode 301B, the third intermediate electrode 323 of the surface-side intermediate electrode 28C, the third intermediate electrode 323 of the back-side intermediate electrode 28D, and the first back-side electrode 311B are electrically connected to each other.
  • the multiple first vias 331B are provided in the center of the third wiring portion 301BC of the first surface electrode 301B in the X direction.
  • the first via 331C is disposed closer to the second substrate side surface 24 and the third substrate side surface 25 than the multiple first vias 331B.
  • each of the second vias 332A to 332D is provided in multiple numbers.
  • the number of each of the second vias 332A to 332D is less than the number of the first vias 331A.
  • the second via 332A is electrically connected to the third surface electrode 303A, the second intermediate electrode 322A of the surface-side intermediate electrode 28C, the second intermediate electrode 322A of the back-side intermediate electrode 28D, and the second back-side electrode 312A.
  • the third surface electrode 303A, the second intermediate electrode 322A of the surface-side intermediate electrode 28C, the second intermediate electrode 322A of the back-side intermediate electrode 28D, and the second back-side electrode 312A are electrically connected to each other.
  • the second via 332B is electrically connected to the third surface electrode 303B, the second intermediate electrode 322B of the surface-side intermediate electrode 28C, the second intermediate electrode 322B of the back-side intermediate electrode 28D, and the second back-side electrode 312B.
  • the third surface electrode 303B, the second intermediate electrode 322B of the surface-side intermediate electrode 28C, the second intermediate electrode 322B of the back-side intermediate electrode 28D, and the second back-side electrode 312B are electrically connected to each other.
  • the second via 332C is electrically connected to the third surface electrode 303C, the second intermediate electrode 322C of the surface-side intermediate electrode 28C, the second intermediate electrode 322C of the back-side intermediate electrode 28D, and the second back-side electrode 312C.
  • the third surface electrode 303C, the second intermediate electrode 322C of the surface-side intermediate electrode 28C, the second intermediate electrode 322C of the back-side intermediate electrode 28D, and the second back-side electrode 312C are electrically connected to each other.
  • the second via 332D is electrically connected to the third surface electrode 303D, the second intermediate electrode 322D of the surface-side intermediate electrode 28C, the second intermediate electrode 322D of the back-side intermediate electrode 28D, and the second back-side electrode 312D.
  • the third surface electrode 303D, the second intermediate electrode 322D of the surface-side intermediate electrode 28C, the second intermediate electrode 322D of the back-side intermediate electrode 28D, and the second back-side electrode 312D are electrically connected to each other.
  • the third via 333 is electrically connected to the first surface electrode 304, the first intermediate electrode 321A of the surface-side intermediate electrode 28C, the first intermediate electrode 321A of the back-side intermediate electrode 28D, and the third back-side electrode 313.
  • the first surface electrode 304, the first intermediate electrode 321A of the surface-side intermediate electrode 28C, the first intermediate electrode 321A of the back-side intermediate electrode 28D, and the third back-side electrode 313 are electrically connected to each other.
  • the fourth via 334 is electrically connected to the sixth surface electrode 306, the fourth intermediate electrode 324 of the surface-side intermediate electrode 28C, the fourth intermediate electrode 324 of the back-side intermediate electrode 28D, and the fourth back-side electrode 314.
  • the sixth surface electrode 306, the fourth intermediate electrode 324 of the surface-side intermediate electrode 28C, the fourth intermediate electrode 324 of the back-side intermediate electrode 28D, and the fourth back-side electrode 314 are electrically connected to each other.
  • the fifth via 335 is electrically connected to the seventh surface electrode 307, the fifth intermediate electrode 325 of the surface-side intermediate electrode 28C, the fifth intermediate electrode 325 of the back-side intermediate electrode 28D, and the fifth back-side electrode 315.
  • the seventh surface electrode 307, the fifth intermediate electrode 325 of the surface-side intermediate electrode 28C, the fifth intermediate electrode 325 of the back-side intermediate electrode 28D, and the fifth back-side electrode 315 are electrically connected to each other.
  • the semiconductor light emitting element 30 is mounted on the first surface electrode 301A. That is, the element back surface electrode 35 (not shown in Figures 24 and 25, see Figure 3) of the semiconductor light emitting element 30 is joined to the first surface electrode 301A by a conductive bonding material SD (not shown in Figures 24 and 25, see Figure 3). As a result, the element back surface electrode 35 is electrically connected to the first surface electrode 301A.
  • the semiconductor light emitting element 30 is disposed biased toward the third substrate side surface 25 with respect to the center of the first surface electrode 301A in the Y direction.
  • the size, shape, and configuration of the semiconductor light-emitting element 30 of the fifth embodiment are similar to those of the semiconductor light-emitting element 30 of the second embodiment.
  • the semiconductor light-emitting element 30 of the fifth embodiment divides the eight light-emitting portions 33 into first to fourth light-emitting portions 33A to 33D, each of which has two light-emitting portions 33.
  • the manner in which the first to fourth light-emitting portions 33A to 33D are divided is similar to that of the second embodiment.
  • the semiconductor light-emitting element 30 includes first to fourth element surface electrodes 34A to 34D corresponding to the anodes of the first to fourth light-emitting portions 33A to 33D, and an element back electrode 35 corresponding to the common cathode of the first to fourth light-emitting portions 33A to 33D.
  • the first element surface electrode 34A is an example of a "first light emission anode electrode”
  • the second element surface electrode 34B is an example of a “second light emission anode electrode”
  • the third element surface electrode 34C is an example of a “third light emission anode electrode”
  • the fourth element surface electrode 34D is an example of a "fourth light emission anode electrode.”
  • the element back surface electrode 35 is an example of a "light emission cathode electrode.”
  • the first element surface electrode 34A and the second surface electrode 302A corresponding to the anode of the first light-emitting portion 33A are electrically connected by a plurality of wires W5.
  • the second element surface electrode 34B and the second surface electrode 302B corresponding to the anode of the second light-emitting portion 33B are electrically connected by wires W5.
  • the third element surface electrode 34C and the second surface electrode 302C corresponding to the anode of the third light-emitting portion 33C are electrically connected by wires W5.
  • the fourth element surface electrode 34D and the second surface electrode 302D corresponding to the anode of the fourth light-emitting portion 33D are electrically connected by wires W5.
  • the first to fourth protection diodes 281 to 284 are individually mounted on the first surface electrode 301A and the second surface electrodes 302A to 302D.
  • the first to fourth protection diodes 281 to 284 are disposed on the first surface electrode 301A closer to the fourth substrate side surface 26 than the semiconductor light emitting element 30.
  • the first protection diode 281 is disposed so as to straddle the first surface electrode 301A and the second surface electrode 302A in the Y direction.
  • the first protection diode 281 is disposed so that the first anode electrode 281A and the first cathode electrode 281B are spaced apart in the Y direction.
  • the first protection diode 281 is disposed at a position overlapping the third light-emitting portion 33C when viewed from the Y direction.
  • the first protection diode 281 is disposed closer to the first substrate side surface 23 than the wire W5 connected to the first light-emitting portion 33A in a plan view.
  • the first anode electrode 281A of the first protection diode 281 is joined to the first surface electrode 301A by a conductive bonding material SD (not shown). As a result, the first anode electrode 281A is electrically connected to the first surface electrode 301A.
  • the first cathode electrode 281B of the first protection diode 281 is joined to the second surface electrode 302A by a conductive bonding material SD (not shown). As a result, the first cathode electrode 281B is electrically connected to the second surface electrode 302A. In this manner, the first protection diode 281 is connected in anti-parallel to the first light-emitting portion 33A.
  • the first anode electrode 281A of the first protection diode 281 is an example of a "first protection anode”
  • the first cathode electrode 281B is an example of a "first protection cathode.”
  • the second protection diode 282 is disposed so as to straddle the first surface electrode 301A and the second surface electrode 302B in the Y direction.
  • the second protection diode 282 is disposed so that the second anode electrode 282A and the second cathode electrode 282B are spaced apart in the Y direction.
  • the second protection diode 282 is disposed at a position overlapping with the fourth light-emitting portion 33D when viewed from the Y direction.
  • the second protection diode 282 is disposed closer to the second substrate side surface 24 than the wire W5 connected to the second light-emitting portion 33B in a plan view.
  • the second anode electrode 282A of the second protection diode 282 is joined to the first surface electrode 301A by a conductive bonding material SD (not shown). As a result, the second anode electrode 282A is electrically connected to the first surface electrode 301A.
  • the second cathode electrode 282B of the second protection diode 282 is joined to the second surface electrode 302B by a conductive bonding material SD (not shown). As a result, the second cathode electrode 282B is electrically connected to the second surface electrode 302B. In this manner, the second protection diode 282 is connected in inverse parallel to the second light-emitting portion 33B.
  • the second anode electrode 282A of the second protection diode 282 is an example of a "second protection anode”
  • the second cathode electrode 282B is an example of a "second protection cathode.”
  • the third protection diode 283 is disposed so as to straddle the first surface electrode 301A and the second surface electrode 302C in the X direction.
  • the third protection diode 283 is disposed so that the third anode electrode 283A and the third cathode electrode 283B are spaced apart in the X direction.
  • the third protection diode 283 is disposed closer to the first substrate side surface 23 than the semiconductor light emitting element 30 in the X direction.
  • the third protection diode 283 is disposed closer to the fourth substrate side surface 26 (see FIG. 21) than the wire W5 connected to the third light emitting portion 33C in a plan view.
  • the third anode electrode 283A of the third protection diode 283 is bonded to the first surface electrode 301A by a conductive bonding material SD (not shown). As a result, the third anode electrode 283A is electrically connected to the first surface electrode 301A.
  • the third cathode electrode 283B of the third protection diode 283 is joined to the second surface electrode 302C by a conductive bonding material SD (not shown). As a result, the third cathode electrode 283B is electrically connected to the second surface electrode 302C. In this manner, the third protection diode 283 is connected in inverse parallel to the third light-emitting portion 33C.
  • the third anode electrode 283A of the third protection diode 283 is an example of a "third protection anode”
  • the third cathode electrode 283B is an example of a "third protection cathode.”
  • the fourth protection diode 284 is disposed so as to straddle the first surface electrode 301A and the second surface electrode 302D in the X direction.
  • the fourth protection diode 284 is disposed so that the fourth anode electrode 284A and the fourth cathode electrode 284B are spaced apart in the X direction.
  • the fourth protection diode 284 is disposed closer to the second substrate side surface 24 than the semiconductor light emitting element 30 in the X direction.
  • the fourth protection diode 284 is disposed closer to the fourth substrate side surface 26 (see FIG. 21) than the wire W5 connected to the fourth light emitting portion 33D in a plan view.
  • the fourth anode electrode 284A of the fourth protection diode 284 is joined to the first surface electrode 301A by a conductive bonding material SD (not shown). As a result, the fourth anode electrode 284A is electrically connected to the first surface electrode 301A.
  • the fourth cathode electrode 284B of the fourth protection diode 284 is joined to the second surface electrode 302D by a conductive bonding material SD (not shown). As a result, the fourth cathode electrode 284B is electrically connected to the second surface electrode 302D. In this manner, the fourth protection diode 284 is connected in inverse parallel to the third light-emitting unit 33C.
  • first to fourth anode electrodes 281A to 284A are electrically connected to each other via the first surface electrode 301A.
  • fourth anode electrode 284A of the fourth protection diode 284 is an example of a "fourth protection anode”
  • fourth cathode electrode 284B is an example of a "fourth protection cathode.”
  • the first to fourth reverse current prevention diodes 261 to 264 are individually mounted on the second surface electrodes 302A to 302D and the third surface electrodes 303A to 303D. Each of the first to fourth reverse current prevention diodes 261 to 264 is disposed away from the semiconductor light emitting element 30 in a plan view. A plurality of each of the first to fourth reverse current prevention diodes 261 to 264 are provided (three in the fifth embodiment).
  • each first reverse current prevention diode 261 is disposed on the opposite side of the first protection diode 281 from the semiconductor light emitting element 30 in the Y direction.
  • the first protection diode 281 is disposed between the semiconductor light emitting element 30 and each first reverse current prevention diode 261 in the Y direction.
  • the first reverse current prevention diodes 261 are connected in parallel to each other. Each first reverse current prevention diode 261 is arranged to straddle the second surface electrode 302A and the third surface electrode 303A in the Y direction. The first reverse current prevention diodes 261 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. The dimension of the second surface electrode 302A in the X direction is set to a dimension that allows the first reverse current prevention diodes 261 to be arranged in the X direction. Each first reverse current prevention diode 261 is arranged so that the anode electrode 261A and the cathode electrode 261B are spaced apart in the Y direction.
  • the cathode electrode 261B of each first reverse current prevention diode 261 is joined to the second surface electrode 302A by a conductive bonding material SD (not shown), and the anode electrode 261A is joined to the third surface electrode 303A by a conductive bonding material SD (not shown).
  • the cathode electrode 261B of each first reverse current prevention diode 261 is electrically connected to the second surface electrode 302A, and the anode electrode 261A is electrically connected to the third surface electrode 303A.
  • the cathode electrode 261B of each first reverse current prevention diode 261 is electrically connected to the first cathode electrode 281B of the first protection diode 281 and the anode (first element surface electrode 34A) of the first light emitting portion 33A.
  • the anode electrode 261A of the first reverse current prevention diode 261 is an example of the "first anode of the first reverse current prevention diode
  • the cathode electrode 261B is an example of the "first cathode of the first reverse current prevention diode”.
  • each second reverse current prevention diode 262 is disposed on the opposite side of the semiconductor light emitting element 30 from the second protection diode 282 in the Y direction.
  • the second protection diode 282 is disposed between the semiconductor light emitting element 30 and each second reverse current prevention diode 262 in the Y direction.
  • the second reverse current prevention diodes 262 are connected in parallel to each other. Each second reverse current prevention diode 262 is arranged to straddle the second surface electrode 302B and the third surface electrode 303B in the Y direction. The second reverse current prevention diodes 262 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. The dimension in the X direction of the second surface electrode 302B is set to a dimension that allows the second reverse current prevention diodes 262 to be arranged in the X direction. Each second reverse current prevention diode 262 is arranged so that the anode electrode 262A and the cathode electrode 262B are spaced apart in the Y direction.
  • each second reverse current prevention diode 262 is joined to the second surface electrode 302B by a conductive bonding material SD (not shown), and the anode electrode 262A is joined to the third surface electrode 303B by a conductive bonding material SD (not shown).
  • the cathode electrode 262B of each second reverse current prevention diode 262 is electrically connected to the second surface electrode 302B, and the anode electrode 262A is electrically connected to the third surface electrode 303B.
  • each second reverse current prevention diode 262 is electrically connected to the second cathode electrode 282B of the second protection diode 282 and the anode (second element surface electrode 34B) of the second light emitting portion 33B.
  • the multiple second reverse current prevention diodes 262 and the multiple first reverse current prevention diodes 261 are in a line-symmetrical relationship with respect to the virtual center line VC.
  • the anode electrode 262A of the second reverse current prevention diode 262 is an example of the "second anode of the second reverse current prevention diode”
  • the cathode electrode 262B is an example of the "second cathode of the second reverse current prevention diode”.
  • each third reverse current prevention diode 263 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the third protection diode 283 in the X direction.
  • the third protection diode 283 is disposed between the semiconductor light emitting element 30 and each third reverse current prevention diode 263 in the X direction.
  • Each third reverse current prevention diode 263 is disposed closer to the fourth substrate side surface 26 than the semiconductor light emitting element 30 in the Y direction.
  • Each third reverse current prevention diode 263 is disposed at a position overlapping with the third protection diode 283 when viewed from the X direction.
  • Each third reverse current prevention diode 263 is disposed closer to the first substrate side surface 23 and the third substrate side surface 25 than each first reverse current prevention diode 261.
  • the multiple third reverse current prevention diodes 263 are connected in parallel to each other. Each third reverse current prevention diode 263 is arranged to straddle the second surface electrode 302C and the third surface electrode 303C in the Y direction. The multiple third reverse current prevention diodes 263 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. Each third reverse current prevention diode 263 is arranged such that the anode electrode 263A and the cathode electrode 263B are spaced apart in the Y direction.
  • each third reverse current prevention diode 263 is joined to the second surface electrode 302C by a conductive bonding material SD (not shown), and the anode electrode 263A is joined to the third surface electrode 303C by a conductive bonding material SD (not shown).
  • the cathode electrode 263B of each third reverse current prevention diode 263 is electrically connected to the second surface electrode 302C, and the anode electrode 263A is electrically connected to the third surface electrode 303C.
  • the cathode electrode 263B of each third reverse current prevention diode 263 is electrically connected to the third cathode electrode 283B of the third protection diode 283 and the anode (third element surface electrode 34C) of the third light emitting portion 33C.
  • the anode electrode 263A of the third reverse current prevention diode 263 is an example of the "third anode of the third reverse current prevention diode
  • the cathode electrode 263B is an example of the "third cathode of the third reverse current prevention diode”.
  • each of the fourth reverse current prevention diodes 264 is disposed on the opposite side of the semiconductor light emitting element 30 with respect to the fourth protection diode 284 in the X direction.
  • the fourth protection diode 284 is disposed between the semiconductor light emitting element 30 and each of the fourth reverse current prevention diodes 264 in the X direction.
  • Each of the fourth reverse current prevention diodes 264 is disposed closer to the fourth substrate side surface 26 than the semiconductor light emitting element 30 in the Y direction.
  • Each of the fourth reverse current prevention diodes 264 is disposed at a position overlapping with the fourth protection diode 284 when viewed from the X direction.
  • Each of the fourth reverse current prevention diodes 264 is disposed closer to the second substrate side surface 24 and the third substrate side surface 25 than each of the second reverse current prevention diodes 262.
  • the multiple fourth reverse current prevention diodes 264 and the multiple third reverse current prevention diodes 263 are in a line symmetrical relationship with respect to the virtual center line VC.
  • the multiple fourth reverse current prevention diodes 264 are connected in parallel to each other. Each fourth reverse current prevention diode 264 is arranged to straddle the second surface electrode 302D and the third surface electrode 303D in the Y direction. The multiple fourth reverse current prevention diodes 264 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. Each fourth reverse current prevention diode 264 is arranged so that the anode electrode 264A and the cathode electrode 264B are spaced apart in the Y direction.
  • each fourth reverse current prevention diode 264 is joined to the second surface electrode 302D by a conductive bonding material SD (not shown), and the anode electrode 264A is joined to the third surface electrode 303D by a conductive bonding material SD (not shown).
  • the cathode electrode 264B of each fourth reverse current prevention diode 264 is electrically connected to the second surface electrode 302D, and the anode electrode 264A is electrically connected to the third surface electrode 303D.
  • each fourth reverse current prevention diode 264 is electrically connected to the fourth cathode electrode 284B of the fourth protection diode 284 and the anode (fourth element surface electrode 34D) of the fourth light emitting portion 33D.
  • the anode electrode 264A of the fourth reverse current prevention diode 264 is an example of the "fourth anode of the fourth reverse current prevention diode”
  • the cathode electrode 264B is an example of the "fourth cathode of the fourth reverse current prevention diode”.
  • the first to fourth capacitors 271 to 274 are individually mounted on the third surface electrodes 303A to 303D and the first surface electrode 301B. Each of the first to fourth capacitors 271 to 274 is disposed away from the semiconductor light emitting element 30 in a plan view. A plurality of each of the first to fourth capacitors 271 to 274 are provided (four in the fifth embodiment).
  • each first capacitor 271 is disposed on the opposite side of each first reverse current prevention diode 261 from the first protection diode 281 (semiconductor light emitting element 30) in the Y direction.
  • each first reverse current prevention diode 261 is disposed between each first capacitor 271 and the first protection diode 281 (semiconductor light emitting element 30) in the Y direction.
  • the first capacitors 271 are connected in parallel to each other. Each first capacitor 271 is arranged so as to straddle the Y-direction between the third surface electrode 303A and the third wiring portion 301BC of the first surface electrode 301B. The first capacitors 271 are arranged at the same position in the Y-direction and spaced apart from each other in the X-direction. Each first capacitor 271 is arranged so that the first electrode 271A and the second electrode 271B are spaced apart in the Y-direction.
  • the first electrode 271A of each first capacitor 271 is joined to the third surface electrode 303A by a conductive bonding material SD (not shown), and the second electrode 271B is joined to the third wiring portion 301BC by a conductive bonding material SD (not shown).
  • the first electrode 271A of each first capacitor 271 is electrically connected to the third surface electrode 303A
  • the second electrode 271B is electrically connected to the first surface electrode 301B. Therefore, the first electrode 271A of each first capacitor 271 is electrically connected to the anode electrode 261A of each first reverse current prevention diode 261.
  • each second capacitor 272 is disposed on the opposite side of each second reverse current prevention diode 262 from the second protection diode 282 (semiconductor light emitting element 30) in the Y direction.
  • each second reverse current prevention diode 262 is disposed between each second capacitor 272 and the second protection diode 282 (semiconductor light emitting element 30) in the Y direction.
  • the second capacitors 272 are connected in parallel to each other. Each second capacitor 272 is arranged to straddle the third surface electrode 303B and the third wiring portion 301BC of the first surface electrode 301B in the Y direction. The second capacitors 272 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. Each second capacitor 272 is arranged so that the first electrode 272A and the second electrode 272B are spaced apart in the Y direction.
  • the first electrode 272A of each second capacitor 272 is joined to the third surface electrode 303B by a conductive bonding material SD (not shown), and the second electrode 272B is joined to the third wiring portion 301BC by a conductive bonding material SD (not shown).
  • each second capacitor 272 is electrically connected to the third surface electrode 303B, and the second electrode 272B is electrically connected to the first surface electrode 301B. Therefore, the first electrode 272A of each second capacitor 272 is electrically connected to the anode electrode 262A of each second reverse current prevention diode 262.
  • each third capacitor 273 is disposed on the opposite side of each third reverse current prevention diode 263 from the third substrate side surface 25 (semiconductor light emitting element 30) in the Y direction. When viewed from the Y direction, each third capacitor 273 is disposed at a position overlapping each third reverse current prevention diode 263. Each third capacitor 273 is disposed closer to the first substrate side surface 23 than each first capacitor 271 in the X direction.
  • the multiple third capacitors 273 are connected in parallel to each other. Each third capacitor 273 is arranged so as to straddle the Y-direction between the third surface electrode 303C and the first wiring portion 301BA of the first surface electrode 301B. The multiple third capacitors 273 are arranged at the same position in the Y-direction and spaced apart from each other in the X-direction. Each third capacitor 273 is arranged so that the first electrode 273A and the second electrode 273B are spaced apart in the Y-direction.
  • the first electrode 273A of each third capacitor 273 is joined to the third surface electrode 303C by a conductive bonding material SD (not shown), and the second electrode 273B is joined to the first wiring portion 301BA by a conductive bonding material SD (not shown).
  • the first electrode 273A of each third capacitor 273 is electrically connected to the third surface electrode 303C
  • the second electrode 273B is electrically connected to the first surface electrode 301B. Therefore, the first electrode 273A of each third capacitor 273 is electrically connected to the anode electrode 263A of each third reverse current prevention diode 263.
  • each fourth capacitor 274 is disposed on the opposite side of each fourth reverse current prevention diode 264 from the third substrate side surface 25 (semiconductor light emitting element 30) in the Y direction. When viewed from the Y direction, each fourth capacitor 274 is disposed at a position overlapping each fourth reverse current prevention diode 264. Each fourth capacitor 274 is disposed closer to the second substrate side surface 24 than each second capacitor 272 in the X direction.
  • the multiple fourth capacitors 274 are connected in parallel to each other. Each fourth capacitor 274 is arranged to straddle the Y direction between the third surface electrode 303D and the second wiring portion 301BB of the first surface electrode 301B. The multiple fourth capacitors 274 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. Each fourth capacitor 274 is arranged so that the first electrode 274A and the second electrode 274B are spaced apart in the Y direction. The first electrode 274A of each fourth capacitor 274 is joined to the third surface electrode 303D by a conductive bonding material SD (not shown), and the second electrode 274B is joined to the second wiring portion 301BB by a conductive bonding material SD (not shown).
  • each fourth capacitor 274 is electrically connected to the third surface electrode 303D, and the second electrode 274B is electrically connected to the first surface electrode 301B. Therefore, the first electrode 274A of each fourth capacitor 274 is electrically connected to the anode electrode 264A of each fourth reverse current prevention diode 264. In this manner, the second electrodes 271B to 274B of the first to fourth capacitors 271 to 274 are electrically connected to each other via the first surface electrode 301B.
  • the multiple fourth capacitors 274 and the multiple third capacitors 273 are in a line-symmetrical relationship with respect to the imaginary center line VC.
  • Each third capacitor 273 and each fourth capacitor 274 is disposed closer to the third substrate side surface 25 in the Y direction than each first capacitor 271 and each second capacitor 272.
  • the light-emitting switching element 291 is disposed closer to the fourth substrate side surface 26 than the semiconductor light-emitting element 30, the first to fourth reverse current prevention diodes 261A to 261D, the first to fourth capacitors 271 to 274, and the first to fourth protection diodes 281 to 284.
  • the first to fourth reverse current prevention diodes 261A to 261D, the first to fourth capacitors 271 to 274, and the first to fourth protection diodes 281 to 284 are disposed between the semiconductor light-emitting element 30 and the light-emitting switching element 291 in the Y direction.
  • the light-emitting switching element 291 is, for example, a horizontal transistor.
  • the light-emitting switching element 291 is formed in a rectangular plate shape with the thickness direction in the Z direction.
  • the light-emitting switching element 291 is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view.
  • the light-emitting switching element 291 has a second element front surface 291A and a second element back surface (not shown) facing opposite sides in the Z direction.
  • the second element front surface 291A faces the same side as the substrate front surface 21, and the second element back surface faces the same side as the substrate back surface 22 (see FIG. 3).
  • the second element back surface faces the substrate front surface 21.
  • a drain electrode 291D, a source electrode 291S, and a gate electrode 291G are formed on the second element back surface.
  • One drain electrode 291D is provided at the center of the light-emitting switching element 291 in the X direction.
  • the drain electrode 291D is formed in a rectangular shape with the Y direction as the long side and the X direction as the short side in a plan view.
  • a plurality of source electrodes 291S (two in the fifth embodiment) are provided.
  • the plurality of source electrodes 291S are distributed and arranged on both sides of the drain electrode 291D in the X direction.
  • Each source electrode 291S is formed in a rectangular shape with the Y direction as the long side and the X direction as the short side in a plan view.
  • the Y direction dimension of the source electrode 291S closer to the second substrate side surface 24 among the plurality of source electrodes 291S is smaller than the Y direction dimension of the source electrode 291S closer to the first substrate side surface 23.
  • the gate electrode 291G is arranged closer to the second substrate side surface 24 than the drain electrode 291D.
  • the gate electrode 291G is disposed at a position overlapping with the source electrode 291S closer to the second substrate side surface 24 as viewed from the Y direction, and closer to the third substrate side surface 25 than the source electrode 291S in the Y direction.
  • the gate electrode 291G is formed in a rectangular shape in a plan view.
  • the light-emitting switching element 291 is mounted on the first surface electrode 301B, the fourth surface electrode 304, and the fifth surface electrode 305. More specifically, the drain electrode 291D of the light-emitting switching element 291 is joined to the fourth surface electrode 304B by a conductive bonding material SD (not shown). Each source electrode 291S is joined to the first surface electrode 301B by a conductive bonding material SD (not shown). The gate electrode 291G is joined to the fifth surface electrode 305 by a conductive bonding material SD (not shown). In this way, the drain electrode 291D is electrically connected to the fourth surface electrode 304, the source electrode 291S is electrically connected to the first surface electrode 301B, and the gate electrode 291G is electrically connected to the fifth surface electrode 305.
  • both the gate driver IC 292 and the capacitor 293 are disposed closer to the fourth substrate side surface 26 than the semiconductor light emitting element 30, the first to fourth reverse current prevention diodes 261A to 261D, the first to fourth capacitors 271 to 274, and the first to fourth protection diodes 281 to 284.
  • Both the gate driver IC 292 and the capacitor 293 are disposed in a position overlapping with the light emitting switching element 291 when viewed from the X direction.
  • Both the gate driver IC 292 and the capacitor 293 are disposed closer to the second substrate side surface 24 than the light emitting switching element 291 in the X direction.
  • the capacitor 293 is disposed closer to the second substrate side surface 24 than the gate driver IC 292 in the X direction.
  • the capacitor 293 is disposed in a position adjacent to the gate driver IC 292 in the X direction.
  • the gate driver IC 292 is formed in a rectangular plate shape with the thickness direction in the Z direction.
  • the gate driver IC 292 is rectangular in shape with the Y direction as the long side and the X direction as the short side in a plan view.
  • the gate driver IC 292 has a chip front surface 292A and a chip back surface (not shown) that face opposite each other in the Z direction.
  • the chip front surface 292A faces the same side as the substrate front surface 21, and the chip back surface faces the same side as the substrate back surface 22.
  • the chip back surface faces the substrate front surface 21.
  • the chip back surface includes a plurality of terminals 292B (six in the fifth embodiment).
  • the plurality of terminals 292B are arranged at a distance from each other in the X direction and the Y direction.
  • the gate driver IC 292 is mounted on each of the first surface electrode 301B and the fifth to seventh surface electrodes 305 to 307. More specifically, the multiple terminals 292B of the gate driver IC 292 are joined to the first surface electrode 301B and the fifth to seventh surface electrodes 305 to 307 by a conductive bonding material SD (not shown). This allows the gate driver IC 292 to be electrically connected to the first surface electrode 301B and the fifth to seventh surface electrodes 305 to 307. In this way, the gate driver IC 292 is electrically connected to the gate electrode 291G of the light-emitting switching element 291 via the fifth surface electrode 305. The gate driver IC 292 is also electrically connected to the source electrode 291S of the light-emitting switching element 291 via the first surface electrode 301B.
  • the sixth surface electrode 306 is electrically connected to a control power supply 807 (see FIG. 20). As a result, power is supplied from the control power supply 807 to the gate driver IC 292 via the sixth surface electrode 306.
  • the seventh surface electrode 307 is electrically connected to a pulse generator 806 (see FIG. 20). As a result, a pulse signal from the pulse generator 806 is input to the gate driver IC 292 via the seventh surface electrode 307.
  • the capacitor 293 is arranged such that the first electrode 293A and the second electrode 293B are spaced apart from each other in the Y direction.
  • the capacitor 293 is mounted on the first surface electrode 301B and the sixth surface electrode 306. More specifically, the first electrode 293A of the capacitor 293 is joined to the sixth surface electrode 306 by a conductive bonding material SD (not shown).
  • the second electrode 293B of the capacitor 293 is joined to the first surface electrode 301B by a conductive bonding material SD (not shown).
  • the first electrode 293A of the capacitor 293 is electrically connected to the sixth surface electrode 306, and the second electrode 293B is electrically connected to the first surface electrode 301B.
  • the semiconductor light emitting device 10 includes a semiconductor light emitting element 30 including first to fourth light emitting portions 33A to 33D, first to fourth element front surface electrodes 34A to 34D electrically connected to the first to fourth light emitting portions 33A to 33D, and an element back surface electrode 35 electrically connected to the first to fourth light emitting portions 33A to 33D, first to fourth reverse current prevention diodes 261 to 264 including a cathode electrode 261B electrically connected to the first to fourth element front surface electrodes 34A to 34D, and an anode electrode 261A electrically connected to the first to fourth charging switching elements 808A to 808D, the first to fourth protection diodes 281 to 284 including a first cathode electrode 281B electrically connected to the 64 cathode electrodes 261B and the first to fourth element surface electrodes 34A to 34D, respectively, and a first anode electrode 281A electrically
  • the first to fourth protection diodes 281 to 284 can prevent the resonant current from applying an excessive reverse bias to the first to fourth light-emitting units 33A to 33D. This can increase the peak light output of the semiconductor light-emitting element 30.
  • first to fourth backflow prevention diodes 261 to 264 suppress the backflow of the resonant current flowing through the first to fourth protection diodes 281 to 284. This prevents the resonant current flowing through the first to fourth protection diodes 281 to 284 from affecting the other light-emitting sections 33. This prevents interference between the first to fourth light-emitting sections 33A to 33D of the semiconductor light-emitting element 30.
  • the semiconductor light emitting element 30 includes a back electrode 35 that serves as a common cathode electrode for the first to fourth light emitting portions 33A to 33D. According to this configuration, the electrical connection between the semiconductor light emitting element 30 and the light emitting switching element 291 can be simplified.
  • (5-3) Further includes a first protection diode 281 connected in anti-parallel to the first light-emitting portion 33A, a second protection diode 282 connected in anti-parallel to the second light-emitting portion 33B, a third protection diode 283 connected in anti-parallel to the third light-emitting portion 33C, and a fourth protection diode 284 connected in anti-parallel to the fourth light-emitting portion 33D.
  • the first to fourth protection diodes 281 to 284 can prevent the resonant current from applying an excessive reverse bias to the first to fourth light-emitting units 33A to 33D. This can increase the peak optical output of the semiconductor light-emitting element 30.
  • the first to fourth anode electrodes 281A to 284A of the first to fourth protection diodes 281 are electrically connected to the back surface electrode 35 of the element, which serves as a common cathode electrode of the semiconductor light emitting element 30. This configuration simplifies the electrical connection configuration between the semiconductor light emitting element 30 and each of the first to fourth protection diodes 281 to 284.
  • the semiconductor light emitting device 10 includes a gate driver IC 292 that controls a light emitting switching element 291 .
  • the conductive path between the gate driver IC 292 and the light-emitting switching element 291 is shorter than in a configuration in which the gate driver IC 292 is provided outside the semiconductor light-emitting device 10. Therefore, it is possible to suppress noise from entering the gate electrode 291G of the light-emitting switching element 291 due to this conductive path.
  • the first to fourth capacitors 271 to 274 are each provided in multiple numbers.
  • the multiple first capacitors 271 are connected in parallel to each other.
  • the multiple second capacitors 272 are connected in parallel to each other.
  • the multiple third capacitors 273 are connected in parallel to each other.
  • the multiple fourth capacitors 274 are connected in parallel to each other.
  • the multiple first capacitors 271 are connected in parallel with each other, so that the total inductance of the multiple first capacitors 271 can be reduced below the inductance of each of the first capacitors 271.
  • the total inductance of the multiple second capacitors 272 can be reduced below the inductance of each of the second capacitors 272
  • the total inductance of the multiple third capacitors 273 can be reduced below the inductance of each of the third capacitors 273
  • the total inductance of the multiple fourth capacitors 274 can be reduced below the inductance of each of the fourth capacitors 274.
  • the area of the first back surface electrode 311B is larger than the area of each of the second back surface electrodes 312A to 312D, the third back surface electrode 313, the fourth back surface electrode 314, and the fifth back surface electrode 315.
  • the heat capacity of the first back electrode 311B is increased, so that heat from the semiconductor light-emitting element 30 is more likely to move to the first back electrode 311B.
  • the bonding area between the first back electrode 311B and the circuit board 900 is increased, so that heat from the semiconductor light-emitting element 30 is more likely to move to the circuit board 900 via the first back electrode 311B. Therefore, it is possible to prevent the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the area of the first back surface electrode 311B is greater than the combined area of the second back surface electrodes 312A to 312D, each of the third back surface electrodes 313, the fourth back surface electrode 314, and the fifth back surface electrode 315.
  • the heat capacity of the first back electrode 311B is increased, so that heat from the semiconductor light-emitting element 30 is more likely to move to the first back electrode 311B.
  • the bonding area between the first back electrode 311B and the circuit board 900 is increased, so that heat from the semiconductor light-emitting element 30 is more likely to move to the circuit board 900 via the first back electrode 311B. This further prevents the temperature of the semiconductor light-emitting element 30 from becoming excessively high.
  • the multiple first vias 331A are arranged at positions overlapping the semiconductor light emitting element 30 in a plan view. According to this configuration, heat from the semiconductor light emitting element 30 is easily transferred to the first intermediate electrode 321A and the first back surface electrode 311A, and therefore the temperature of the semiconductor light emitting element 30 can be prevented from becoming excessively high.
  • the eight light emitting sections 33 of the semiconductor light emitting element 30 can be configured as the first light emitting section 33A and the second light emitting section 33B, including a common light emitting switching element and a backflow prevention diode.
  • a semiconductor light emitting device 10 configured in this manner can achieve the same effects as the semiconductor light emitting device 10 of the fifth embodiment.
  • FIGS. Fig. 27 shows a schematic circuit configuration of a light emitting system 800 including a semiconductor light emitting device 10 of the sixth embodiment.
  • Fig. 28 shows a schematic planar structure of the semiconductor light emitting device 10 of the sixth embodiment.
  • Fig. 29 shows a schematic back surface structure of the semiconductor light emitting device 10 of Fig. 28.
  • Fig. 30 shows a schematic planar structure of a front surface side intermediate electrode 28C of the semiconductor light emitting device 10 of Fig. 28.
  • Fig. 31 shows a schematic planar structure of a back surface side intermediate electrode 28D of the semiconductor light emitting device 10 of Fig. 28.
  • Figs. 32 to 34 show enlarged schematic planar structures of a light emitting switching element 291 and its periphery of the semiconductor light emitting device 10 of Fig. 28.
  • the light-emitting system 800 of the sixth embodiment differs from the light-emitting system 800 of the fifth embodiment mainly in the number of light-emitting switching elements, gate driver ICs, and capacitors.
  • differences from the fifth embodiment will be described, and components common to the fifth embodiment will be denoted by the same reference numerals and description thereof will be omitted.
  • the semiconductor light emitting device 10 includes first to fourth light emitting switching elements 291W to 291Z as a plurality (four in the sixth embodiment) of light emitting switching elements, first to fourth gate driver ICs 292W to 292Z as a plurality (four in the sixth embodiment) of gate driver ICs, and first to fourth capacitors 293W to 293Z as a plurality (four in the sixth embodiment) of capacitors.
  • the number of light emitting switching elements and gate driver ICs is set according to, for example, the number of light emitting portions 33 of the semiconductor light emitting element 30.
  • the number of capacitors electrically connected to the gate driver IC is set according to the number of gate driver ICs.
  • the semiconductor light emitting device 10 includes pulse generators 806A-806D and control power supplies 807A-807D corresponding to the first to fourth gate driver ICs 292W-292Z.
  • the number of pulse generators and control power supplies is set according to the number of gate driver ICs, for example.
  • Each of the pulse generators 806A-806D and control power supplies 807A-807D is provided outside the semiconductor light emitting device 10.
  • the drain electrodes of the first to fourth light-emitting switching elements 291W to 291Z are each electrically connected to the element back surface electrode 35, which serves as the common cathode electrode of the semiconductor light-emitting element 30. Therefore, the drain electrodes of each light-emitting switching element 291 are electrically connected to the first to fourth anode electrodes 281A to 284A of the first to fourth protection diodes 281 to 284.
  • the source electrodes of the first to fourth light-emitting switching elements 291W to 291Z are each electrically connected to the ground wiring. Therefore, the source electrodes of the first to fourth light-emitting switching elements 291W to 291Z are electrically connected to the second electrodes of the first to fourth capacitors 271 to 274.
  • the first to fourth gate driver ICs 292W to 292Z are individually and electrically connected to the gate electrodes of the first to fourth light-emitting switching elements 291W to 291Z.
  • the first gate driver IC 292W is configured to control the first light-emitting switching element 291W
  • the second gate driver IC 292X is configured to control the second light-emitting switching element 291X
  • the third gate driver IC 292Y is configured to control the third light-emitting switching element 291Y
  • the fourth gate driver IC 292Z is configured to control the fourth light-emitting switching element 291Z.
  • the first to fourth capacitors 293W to 293Z are electrically connected to the first to fourth gate driver ICs 292W to 292Z, respectively.
  • the first to fourth gate driver ICs 292W to 292Z and the first to fourth capacitors 293W to 293Z are electrically connected to the ground wiring.
  • the pulse generators 806A to 806D are electrically connected to the first to fourth gate driver ICs 292W to 292Z, respectively. That is, the pulse generator 806A is configured to output a pulse signal that controls the first light-emitting switching element 291W to the first gate driver IC 292W.
  • the pulse generator 806B is configured to output a pulse signal that controls the second light-emitting switching element 291X to the second gate driver IC 292X.
  • the pulse generator 806C is configured to output a pulse signal that controls the third light-emitting switching element 291Y to the third gate driver IC 292Y.
  • the pulse generator 806D is configured to output a pulse signal that controls the fourth light-emitting switching element 291Z to the fourth gate driver IC 292Z.
  • the control power supplies 807A to 807D are electrically connected to the first to fourth gate driver ICs 292W to 292Z, respectively.
  • the control power supplies 807A to 807D are electrically connected to the first to fourth capacitors 293W to 293Z, respectively.
  • the control power supply 807A is configured to supply power to the first gate driver IC 292W.
  • the control power supply 807B is configured to supply power to the second gate driver IC 292X.
  • the control power supply 807C is configured to supply power to the third gate driver IC 292Y.
  • the control power supply 807D is configured to supply power to the fourth gate driver IC 292Z.
  • the first to fourth reverse current prevention diodes 261 to 264, the first to fourth capacitors 271 to 274, the first to fourth protection diodes 281 to 284, the first to fourth light emission switching elements 291W to 291Z, the first to fourth gate driver ICs 292W to 292Z, and the first to fourth capacitors 293W to 293Z are arranged on the substrate surface 21.
  • Each of the first to fourth reverse current prevention diodes 261 to 264, the first to fourth capacitors 271 to 274, the first to fourth protection diodes 281 to 284, the first to fourth light emission switching elements 291W to 291Z, the first to fourth gate driver ICs 292W to 292Z, and the first to fourth capacitors 293W to 293Z is mounted on a plurality of surface electrodes 28A.
  • the semiconductor light-emitting device 10 of the sixth embodiment includes first to fourth drive circuits 40, 50, 110, and 120.
  • the first drive circuit 40 includes a first capacitor 271 and a first light-emission switching element 291W.
  • the second drive circuit 50 includes a second capacitor 272 and a second light-emission switching element 291X.
  • the third drive circuit 110 includes a third capacitor 273 and a third light-emission switching element 291Y.
  • the fourth drive circuit 120 includes a fourth capacitor 274 and a fourth light-emission switching element 291Z.
  • the number of the fourth to seventh surface electrodes of the multiple surface electrodes 28A varies according to the change in the number of light-emitting switching elements, gate driver ICs, and capacitors electrically connected to the gate driver ICs.
  • the multiple surface electrodes 28A include the fourth surface electrodes 304A-304D, the fifth surface electrodes 305A-305D, the sixth surface electrodes 306A-306D, and the seventh surface electrodes 307A-307D according to the first to fourth light-emitting switching elements 291W-291Z, the first to fourth gate driver ICs 292W-292Z, and the first to fourth capacitors 293W-293Z.
  • the configurations of the first surface electrode 301A, the second surface electrodes 302A-302D, and the third surface electrodes 303A-303D are the same as those in the fifth embodiment.
  • openings are formed in the first surface electrode 301B in which the fourth to seventh surface electrodes are arranged.
  • the fourth surface electrodes 304A, 304B, the fifth surface electrodes 305A, 305B, the sixth surface electrodes 306A, 306B, and the seventh surface electrodes 307A, 307B are disposed within openings formed in the third wiring portion 301BC of the first surface electrode 301B.
  • the shapes and arrangement of the fourth surface electrode 304B, the fifth surface electrode 305B, the sixth surface electrode 306B, and the seventh surface electrode 307B are the same as those of the fourth to seventh surface electrodes 304 to 307 in the fifth embodiment.
  • the shapes and arrangement of the fourth surface electrode 304A, the fifth surface electrode 305A, the sixth surface electrode 306A, and the seventh surface electrode 307A are symmetrical to the fourth surface electrode 304B, the fifth surface electrode 305B, the sixth surface electrode 306B, and the seventh surface electrode 307B with respect to a point CP on the imaginary center line VC.
  • Point CP is, for example, the intersection of a straight line extending in the X direction at the center of the light-emitting switching element 291 in the Y direction and the imaginary center line VC.
  • the fourth surface electrode 304C, the fifth surface electrode 305C, the sixth surface electrode 306C, and the seventh surface electrode 307C are disposed within an opening formed in the first wiring portion 301BA of the first surface electrode 301B.
  • the shapes and arrangement of the fourth surface electrode 304C, the fifth surface electrode 305C, the sixth surface electrode 306C, and the seventh surface electrode 307C are rotated 90° counterclockwise from the fourth surface electrode 304B, the fifth surface electrode 305B, the sixth surface electrode 306B, and the seventh surface electrode 307B.
  • the fourth surface electrode 304D, the fifth surface electrode 305D, the sixth surface electrode 306D, and the seventh surface electrode 307D are disposed within an opening formed in the second wiring portion 301BB of the first surface electrode 301B.
  • the shapes and arrangement of the fourth surface electrode 304D, the fifth surface electrode 305D, the sixth surface electrode 306D, and the seventh surface electrode 307D are obtained by rotating the fourth surface electrode 304A, the fifth surface electrode 305A, the sixth surface electrode 306A, and the seventh surface electrode 307A by 90° clockwise.
  • the fourth surface electrodes 304C, 304D, the fifth surface electrodes 305C, 305D, the sixth surface electrodes 306C, 306D, and the seventh surface electrodes 307C, 307D are disposed closer to the third substrate side surface 25 in the Y direction than the fourth surface electrodes 304A, 304B, the fifth surface electrodes 305A, 305B, the sixth surface electrodes 306A, 306B, and the seventh surface electrodes 307A, 307B.
  • the plurality of surface electrodes 28A further includes eighth surface electrodes 308A, 308B, ninth surface electrodes 309A, 309B, and tenth surface electrodes 310A, 310B.
  • the eighth surface electrodes 308A, 308B, the ninth surface electrodes 309A, 309B, and the tenth surface electrodes 310A, 310B are disposed at positions adjacent to the fourth substrate side surface 26 in the Y direction.
  • the eighth surface electrodes 308A, 308B, the ninth surface electrodes 309A, 309B, and the tenth surface electrodes 310A, 310B are formed in a square shape in a plan view.
  • the eighth surface electrode 308A, the ninth surface electrode 309A, and the tenth surface electrode 310A are arranged closer to the first substrate side surface 23 than the fourth surface electrode 304A, the fifth surface electrode 305A, the sixth surface electrode 306A, and the seventh surface electrode 307A.
  • the eighth surface electrode 308A, the ninth surface electrode 309A, and the tenth surface electrode 310A are arranged at the same position as each other in the Y direction and spaced apart from each other in the X direction.
  • the eighth surface electrode 308A, the ninth surface electrode 309A, and the tenth surface electrode 310A are arranged in this order from the imaginary center line VC toward the first substrate side surface 23.
  • the eighth surface electrode 308B, the ninth surface electrode 309B, and the tenth surface electrode 310B are arranged closer to the second substrate side surface 24 than the fourth surface electrode 304B, the fifth surface electrode 305B, the sixth surface electrode 306B, and the seventh surface electrode 307B.
  • the eighth surface electrode 308B, the ninth surface electrode 309B, and the tenth surface electrode 310B are arranged at the same position as each other in the Y direction and spaced apart from each other in the X direction.
  • the eighth surface electrode 308B, the ninth surface electrode 309B, and the tenth surface electrode 310B are arranged in this order from the imaginary center line VC toward the second substrate side surface 24.
  • the multiple back surface electrodes 28B include first back surface electrodes 311A to 311D, second back surface electrodes 312A to 312D, third back surface electrodes 313A to 313D, fourth back surface electrodes 314A to 314D, fifth back surface electrodes 315A to 315D, sixth back surface electrodes 316A, 316B, seventh back surface electrodes 317A, 317B, and eighth back surface electrodes 318A, 318B.
  • the first back surface electrodes 311A to 311D, the second back surface electrodes 312A to 312D, the third back surface electrodes 313A to 313D, the fourth back surface electrodes 314A to 314D, the fifth back surface electrodes 315A to 315D, the sixth back surface electrodes 316A, 316B, the seventh back surface electrodes 317A, 317B, and the eighth back surface electrodes 318A, 318B are arranged at a distance from one another.
  • the configuration and arrangement of the first back surface electrode 311A are the same as those of the first back surface electrode 311A in the fifth embodiment.
  • the area of the first back surface electrode 311B is larger than the areas of the second back surface electrodes 312A to 312D, the third back surface electrodes 313A to 313D, the fourth back surface electrodes 314A to 314D, the fifth back surface electrodes 315A to 315D, the sixth back surface electrodes 316A, 316B, the seventh back surface electrodes 317A, 317B, and the eighth back surface electrodes 318A, 318B.
  • the area of the first back surface electrode 311B is larger than the total area of the second back surface electrodes 312A to 312D, the third back surface electrodes 313A to 313D, the fourth back surface electrodes 314A to 314D, the fifth back surface electrodes 315A to 315D, the sixth back surface electrodes 316A, 316B, the seventh back surface electrodes 317A, 317B, and the eighth back surface electrodes 318A, 318B.
  • the first back surface electrode 311B is formed over most of the substrate back surface 22.
  • the first back surface electrode 311B is formed in a region of the substrate back surface 22 other than the regions where the first back surface electrode 311A, the second back surface electrodes 312A to 312D, the third back surface electrodes 313A to 313D, the fourth back surface electrodes 314A to 314D, the fifth back surface electrodes 315A to 315D, the sixth back surface electrodes 316A and 316B, the seventh back surface electrodes 317A and 317B, and the eighth back surface electrodes 318A and 318B are formed.
  • the first back surface electrode 311C and the first back surface electrode 311D are disposed in a distributed manner on both sides of the first back surface electrode 311A in the X direction. Both the first back surface electrode 311C and the first back surface electrode 311D are electrodes electrically connected to the first surface electrode 301B (see FIG. 28).
  • the first back surface electrode 311C is disposed at a position overlapping the first wiring portion 301BA (see FIG. 28) of the first surface electrode 301B in a planar view.
  • the first back surface electrode 311D is disposed at a position overlapping the second wiring portion 301BB (see FIG. 28) of the first surface electrode 301B in a planar view.
  • the second back surface electrode 312A is an electrode electrically connected to the third surface electrode 303A
  • the second back surface electrode 312B is an electrode electrically connected to the third surface electrode 303B
  • the second back surface electrode 312C is an electrode electrically connected to the third surface electrode 303C
  • the second back surface electrode 312D is an electrode electrically connected to the third surface electrode 303D.
  • the second back surface electrodes 312A-312D are electrodes that are individually and electrically connected to the sources of the first to fourth charging switching elements 808A-808D (see FIG. 27). More specifically, the second back surface electrode 312A is an electrode that is electrically connected to the source of the first charging switching element 808A, the second back surface electrode 312B is an electrode that is electrically connected to the source of the second charging switching element 808B, the second back surface electrode 312C is an electrode that is electrically connected to the source of the third charging switching element 808C, and the second back surface electrode 312D is an electrode that is electrically connected to the source of the fourth charging switching element 808D.
  • the second back electrodes 312A, 312B extend from a position adjacent to the fourth substrate side surface 26 on the substrate back surface 22 to a position adjacent to the first substrate side surface 311A in the Y direction.
  • the second back electrodes 312A, 312B are arranged in a dispersed manner on both sides of the virtual center line VC in the X direction.
  • the second back electrode 312A is arranged closer to the first substrate side surface 23 than the virtual center line VC, and the second back electrode 312B is arranged closer to the second substrate side surface 24 than the virtual center line VC.
  • the second back electrode 312A and the second back electrode 312B are in an axisymmetric relationship with respect to the virtual center line VC.
  • the second back surface electrode 312C is disposed closer to the first substrate side surface 23 in the X direction than the first back surface electrode 311A and the second back surface electrode 312A.
  • the second back surface electrode 312C extends from a position adjacent to the first substrate side surface 23 on the substrate back surface 22 to a position adjacent to the first back surface electrode 311A in the X direction.
  • the second back surface electrode 312C is formed so as to surround the first back surface electrode 311C from the second substrate side surface 24 side and the fourth substrate side surface 26 side in a plan view.
  • the second back surface electrode 312D is disposed closer to the second substrate side surface 24 in the X direction than the first back surface electrode 311A and the second back surface electrode 312B.
  • the second back surface electrode 312D extends from a position adjacent to the second substrate side surface 24 on the substrate back surface 22 to a position adjacent to the first back surface electrode 311A in the X direction.
  • the second back surface electrode 312D is formed so as to surround the first back surface electrode 311D from the first substrate side surface 23 side and the fourth substrate side surface 26 side in a plan view.
  • the second back surface electrode 312C and the second back surface electrode 312D are in a line-symmetric relationship with respect to the virtual center line VC.
  • the third back surface electrode 313A is an electrode electrically connected to the fourth surface electrode 304A (see FIG. 23)
  • the third back surface electrode 313B is an electrode electrically connected to the fourth surface electrode 304B (see FIG. 23)
  • the third back surface electrode 313C is an electrode electrically connected to the fourth surface electrode 304C (see FIG. 23)
  • the third back surface electrode 313D is an electrode electrically connected to the fourth surface electrode 304D (see FIG. 23).
  • a plurality of third back surface electrodes 313A to 313D are provided and each of the third back surface electrodes 313A to 313D is formed in a circular shape in a plan view.
  • the third back electrodes 313A to 313D are arranged in a distributed manner on both sides of the virtual center line VC in the X direction.
  • the third back electrodes 313A and 313C are arranged closer to the first substrate side surface 23 than the virtual center line VC, and the third back electrodes 313B and 313D are arranged closer to the second substrate side surface 24 than the virtual center line VC.
  • the third back electrodes 313C are arranged closer to the first substrate side surface 23 than the third back electrodes 313A.
  • the third back electrodes 313D are arranged closer to the second substrate side surface 24 than the third back electrodes 313B.
  • the third back electrodes 313C and 313D are arranged closer to the third substrate side surface 25 than the third back electrodes 313A and 313B in the Y direction.
  • the third back electrodes 313C and 313D are arranged at positions overlapping with the first back electrode 311A.
  • the multiple third back electrodes 313A, 313B are arranged at the same position in the X direction and spaced apart from each other in the Y direction.
  • the multiple third back electrodes 313C, 313D are arranged at the same position in the Y direction and spaced apart from each other in the X direction.
  • the fourth back surface electrode 314A is an electrode electrically connected to the sixth surface electrode 306A (see FIG. 23)
  • the fourth back surface electrode 314B is an electrode electrically connected to the sixth surface electrode 306B (see FIG. 23)
  • the fourth back surface electrode 314C is an electrode electrically connected to the sixth surface electrode 306C (see FIG. 23)
  • the fourth back surface electrode 314D is an electrode electrically connected to the sixth surface electrode 306D (see FIG. 23).
  • the fourth back surface electrodes 314A to 314D are formed in a circular shape in a plan view. In one example, the size of the fourth back surface electrodes 314A to 314D is the same as the size of the third back surface electrodes 313A to 313D.
  • the fifth back surface electrode 315A is an electrode electrically connected to the seventh surface electrode 307A (see FIG. 23)
  • the fifth back surface electrode 315B is an electrode electrically connected to the seventh surface electrode 307B (see FIG. 23)
  • the fifth back surface electrode 315C is an electrode electrically connected to the seventh surface electrode 307C (see FIG. 23)
  • the fifth back surface electrode 315D is an electrode electrically connected to the seventh surface electrode 307D (see FIG. 23).
  • the fifth back surface electrodes 315A to 315D are formed in a circular shape in a plan view. In one example, the size of the fifth back surface electrodes 315A to 315D is the same as the size of the fourth back surface electrodes 314A to 314D.
  • the fourth back surface electrode 314A and the fifth back surface electrode 315A are arranged closer to the first substrate side surface 23 in the X direction than the third back surface electrodes 313A.
  • the fourth back surface electrode 314A and the fifth back surface electrode 315A are arranged at the same position as each other in the X direction and spaced apart from each other in the Y direction.
  • the fourth back surface electrode 314A is arranged closer to the fourth substrate side surface 26 than the fifth back surface electrode 315A.
  • the fourth back surface electrode 314B and the fifth back surface electrode 315B are arranged closer to the second substrate side surface 24 in the X direction than the third back surface electrodes 313B.
  • the fourth back surface electrode 314B and the fifth back surface electrode 315B are arranged at the same position as each other in the X direction and spaced apart from each other in the Y direction.
  • the fourth back surface electrode 314B is arranged closer to the third substrate side surface 25 than the fifth back surface electrode 315B.
  • the fourth back surface electrodes 314C, 314D and the fifth back surface electrodes 315C, 315D are arranged closer to the third substrate side surface 25 than the fourth back surface electrodes 314A, 314B and the fifth back surface electrodes 315A, 315B in the Y direction.
  • the fourth back surface electrodes 314C, 314D and the fifth back surface electrodes 315C, 315D are arranged closer to the fourth substrate side surface 26 than the third back surface electrodes 313A, 313B in the Y direction.
  • the fourth back surface electrode 314C and the fifth back surface electrode 315C are arranged closer to the first substrate side surface 23 than the fourth back surface electrode 314A and the fifth back surface electrode 315A in the X direction.
  • the fifth back surface electrode 315C is arranged closer to the first substrate side surface 23 than the fourth back surface electrode 314C.
  • the fourth back surface electrode 314D and the fifth back surface electrode 315D are arranged closer to the second substrate side surface 24 than the fourth back surface electrode 314B and the fifth back surface electrode 315B in the X direction.
  • the fourth back surface electrode 314D is arranged closer to the second substrate side surface 24 than the fifth back surface electrode 315D.
  • the sixth back electrodes 316A, 316B, the seventh back electrodes 317A, 317B, and the eighth back electrodes 318A, 318B are arranged in positions adjacent to the fourth substrate side surface 26 in the Y direction.
  • the sixth back electrodes 316A, 316B, the seventh back electrodes 317A, 317B, and the eighth back electrodes 318A, 318B are formed in a square shape in a plan view.
  • the sixth back electrode 316A, the seventh back electrode 317A, and the eighth back electrode 318A are arranged closer to the first substrate side surface 23 than the fourth back electrode 314A and the fifth back electrode 315A.
  • the sixth back electrode 316A, the seventh back electrode 317A, and the eighth back electrode 318A are arranged at the same position in the Y direction and spaced apart from each other in the X direction.
  • the sixth back electrode 316A, the seventh back electrode 317A, and the eighth back electrode 318A are arranged in this order from the imaginary center line VC toward the first substrate side surface 23.
  • the sixth back surface electrode 316B, the seventh back surface electrode 317B, and the eighth back surface electrode 318B are arranged closer to the second substrate side surface 24 than the fourth back surface electrode 314B and the fifth back surface electrode 315B.
  • the sixth back surface electrode 316B, the seventh back surface electrode 317B, and the eighth back surface electrode 318B are arranged at the same position as each other in the Y direction and spaced apart from each other in the X direction.
  • the sixth back surface electrode 316B, the seventh back surface electrode 317B, and the eighth back surface electrode 318B are arranged in this order from the imaginary center line VC toward the second substrate side surface 24.
  • the multiple surface-side intermediate electrodes 28C include first intermediate electrodes 321A, 321B, second intermediate electrodes 322A-322D, third intermediate electrodes 323A-323D, fourth intermediate electrodes 324A, 324B, fifth intermediate electrodes 325A, 325B, and sixth intermediate electrodes 326A, 326B.
  • the first intermediate electrodes 321A, 321B, second intermediate electrodes 322A-322D, third intermediate electrodes 323A-323D, fourth intermediate electrodes 324A, 324B, fifth intermediate electrodes 325A, 325B, and sixth intermediate electrodes 326A, 326B are arranged at a distance from one another.
  • the first intermediate electrodes 321A, 321B are formed over most of the substrate surface of the intermediate substrate 27C.
  • the first intermediate electrodes 321A, 321B include recesses and openings that avoid the second intermediate electrodes 322A-322D, the third intermediate electrodes 323A-323D, the fourth intermediate electrodes 324A, 324B, the fifth intermediate electrodes 325A, 325B, and the sixth intermediate electrodes 326A, 326B.
  • the first intermediate electrode 321A is an electrode that electrically connects the first surface electrode 301A and the fourth surface electrodes 304A, 304B (both see FIG. 28).
  • the first intermediate electrode 321A is formed in an approximately T-shape in a planar view.
  • the first intermediate electrode 321A includes a wide portion 321AA and a narrow portion 321AB. In one example, the wide portion 321AA and the narrow portion 321AB are integrated.
  • the wide portion 321AA is disposed at a position adjacent to the third substrate side surface 25 on the substrate surface of the intermediate substrate 27C in a planar view.
  • the wide portion 321AA is formed over most of the substrate surface of the intermediate substrate 27C in the X direction.
  • the narrow portion 321AB extends from the center of the wide portion 321AA in the X direction toward the fourth substrate side surface 26.
  • the tip of the narrow portion 321AB is located closer to the fourth substrate side surface 26 than the center of the intermediate base material 27C in the Y direction and is spaced apart in the Y direction from the fourth substrate side surface 26.
  • the first intermediate electrode 321A is formed in the Y direction from the first surface electrode 301A to the third surface electrodes 303A and 303B.
  • the first intermediate electrode 321A is symmetrical about the imaginary center line VC.
  • the first intermediate electrode 321B is an electrode that is electrically connected to the first surface electrode 301B (see FIG. 28) and the first back surface electrodes 311B to 311D (see FIG. 29).
  • the first intermediate electrode 321B is formed so as to surround the first intermediate electrode 321A from the first substrate side surface 23, the second substrate side surface 24, and the fourth substrate side surface 26.
  • the second intermediate electrode 322A is an electrode electrically connected to both the third surface electrode 303A (see FIG. 28) and the second back surface electrode 312A (see FIG. 29).
  • the second intermediate electrode 322B is an electrode electrically connected to both the third surface electrode 303B (see FIG. 28) and the second back surface electrode 312B (see FIG. 29).
  • the second intermediate electrode 322C is an electrode electrically connected to both the third surface electrode 303C (see FIG. 28) and the second back surface electrode 312C (see FIG. 29).
  • the second intermediate electrode 322D is an electrode electrically connected to both the third surface electrode 303D (see FIG. 28) and the second back surface electrode 312D (see FIG. 29).
  • the second intermediate electrodes 322A to 322D are arranged closer to the third substrate side surface 25 than the center of the intermediate substrate 27C in the Y direction.
  • the second intermediate electrode 322A is arranged between the end of the narrow portion 321AB of the first intermediate electrode 321A closer to the first substrate side surface 23 in the X direction and the first intermediate electrode 321B.
  • the second intermediate electrode 322B is arranged between the end of the narrow portion 321AB of the first intermediate electrode 321A closer to the second substrate side surface 24 in the X direction and the first intermediate electrode 321B.
  • the second intermediate electrode 322C is arranged in an opening formed in a portion of the wide portion 321AA of the first intermediate electrode 321A closer to the first substrate side surface 23 than the narrow portion 321AB.
  • the second intermediate electrode 322D is arranged in an opening formed in a portion of the wide portion 321AA closer to the second substrate side surface 24 than the narrow portion 321AB.
  • the second intermediate electrodes 322A and 322B are formed in an elliptical shape with the X direction being the long side in a plan view and the Y direction being the short side in a plan view.
  • the second intermediate electrodes 322C and 322D are formed in an elliptical shape with the Y direction being the long side in a plan view and the X direction being the short side in a plan view.
  • the third intermediate electrode 323A is an electrode electrically connected to both the seventh surface electrode 307A (see FIG. 28) and the fifth back surface electrode 315A (see FIG. 29).
  • the third intermediate electrode 323B is an electrode electrically connected to both the seventh surface electrode 307B (see FIG. 28) and the fifth back surface electrode 315B (see FIG. 29).
  • the third intermediate electrode 323C is an electrode electrically connected to both the seventh surface electrode 307C (see FIG. 28) and the fifth back surface electrode 315C (see FIG. 29).
  • the third intermediate electrode 323D is an electrode electrically connected to both the seventh surface electrode 307D (see FIG. 28) and the fifth back surface electrode 315D (see FIG. 29).
  • the third intermediate electrodes 323A to 323D are formed in a circular shape in a planar view.
  • the third intermediate electrodes 323A and 323C are arranged closer to the first substrate side surface 23 than the narrow width portion 321AB of the first intermediate electrode 321A in the X direction.
  • the third intermediate electrode 323C is arranged closer to the first substrate side surface 23 than the third intermediate electrode 323A.
  • the third intermediate electrodes 323B and 323D are arranged closer to the second substrate side surface 24 than the narrow width portion 321AB in the X direction.
  • the third intermediate electrode 323D is arranged closer to the second substrate side surface 24 than the third intermediate electrode 323B.
  • the fourth intermediate electrode 324A is electrically connected to both the eighth surface electrode 308A (see FIG. 28) and the sixth back surface electrode 316A (see FIG. 29).
  • the fourth intermediate electrode 324B is electrically connected to both the eighth surface electrode 308B (see FIG. 28) and the sixth back surface electrode 316B (see FIG. 29).
  • the fifth intermediate electrode 325A is electrically connected to both the ninth surface electrode 309A (see FIG. 28) and the seventh back surface electrode 317A (see FIG. 29).
  • the fifth intermediate electrode 325B is electrically connected to both the ninth surface electrode 309B (see FIG. 28) and the seventh back surface electrode 317B (see FIG. 29).
  • the fourth intermediate electrodes 324A, 324B and the fifth intermediate electrodes 325A, 325B are arranged at a position adjacent to the fourth substrate side surface 26 of the intermediate substrate 27C in a plan view.
  • the fourth intermediate electrodes 324A, 324B and the fifth intermediate electrodes 325A, 325B are arranged in a distributed manner at both ends of the intermediate substrate 27C in the X direction.
  • the fourth intermediate electrode 324A and the fifth intermediate electrode 325A are arranged at the end of the intermediate substrate 27C closer to the first substrate side surface 23.
  • the fourth intermediate electrode 324B and the fifth intermediate electrode 325B are arranged at the end of the substrate 27 closer to the second substrate side surface 24.
  • the fourth intermediate electrode 324A and the fifth intermediate electrode 325A are arranged at the same position as each other in the Y direction and spaced apart in the X direction.
  • the fourth intermediate electrode 324B and the fifth intermediate electrode 325B are arranged at the same position as each other in the Y direction and spaced apart in the X direction.
  • the fifth intermediate electrode 325A is disposed closer to the first substrate side surface 23 than the fourth intermediate electrode 324A.
  • the fifth intermediate electrode 325B is disposed closer to the second substrate side surface 24 than the fourth intermediate electrode 324B.
  • the sixth intermediate electrode 326A is electrically connected to each of the sixth surface electrodes 306A, 306C, the tenth surface electrode 310A (see FIG. 28), the fourth back surface electrodes 314A, 314C, and the eighth back surface electrode 318A (see FIG. 29).
  • the sixth intermediate electrode 326B is electrically connected to each of the sixth surface electrodes 306B, 306D, the tenth surface electrode 310B (see FIG. 28), the fourth back surface electrodes 314B, 314D, and the eighth back surface electrode 318B (see FIG. 29).
  • the sixth intermediate electrode 326A includes a base 326AA adjacent to the fifth intermediate electrode 325A on the opposite side to the fourth intermediate electrode 324A in the X direction, a first extension 326AB extending from the base 326AA, and a second extension 326AC branching off and extending from the first extension 326AB.
  • the base 326AA is formed in a square shape in a plan view.
  • the first extension 326AB extends toward the sixth surface electrode 306C (fourth back surface electrode 314C).
  • the sixth intermediate electrode 326A is electrically connected to both the sixth surface electrode 306C and the fourth back surface electrode 314C at the tip of the first extension 326AB.
  • the second extension 326AC extends toward the sixth surface electrode 306A (fourth back surface electrode 314A).
  • the sixth intermediate electrode 326A is electrically connected to both the sixth surface electrode 306A and the fourth back surface electrode 314A at the tip of the second extension 326AC.
  • the sixth intermediate electrode 326A is electrically connected to the tenth surface electrode 310A (eighth back surface electrode 318A) at the base 326AA.
  • the sixth intermediate electrode 326B includes a base 326BA adjacent to the fifth intermediate electrode 325B on the opposite side to the fourth intermediate electrode 324B in the X direction, a first extension 326BB extending from the base 326BA, and a second extension 326BC branching off and extending from the first extension 326BB.
  • the base 326BA is formed in a square shape in a plan view.
  • the first extension 326BB extends toward the sixth surface electrode 306D (fourth back surface electrode 314D).
  • the sixth intermediate electrode 326B is electrically connected to both the sixth surface electrode 306D and the fourth back surface electrode 314D at the tip of the first extension 326BB.
  • the second extension 326BC extends toward the sixth surface electrode 306B (fourth back surface electrode 314B).
  • the sixth intermediate electrode 326B is electrically connected to both the sixth surface electrode 306B and the fourth back surface electrode 314B at the tip of the second extension 326BC.
  • the sixth intermediate electrode 326B is electrically connected to the tenth surface electrode 310B (eighth back surface electrode 318B) at the base 326BA.
  • the multiple back surface side intermediate electrodes 28D include first intermediate electrodes 341A, 341B, second intermediate electrodes 342A-342D, third intermediate electrodes 343A-343D, fourth intermediate electrodes 344A, 344B, fifth intermediate electrodes 345A, 345B, and sixth intermediate electrodes 346A, 346B.
  • the first intermediate electrodes 341A, 341B, second intermediate electrodes 342A-342D, third intermediate electrodes 343A-343D, fourth intermediate electrodes 344A, 344B, fifth intermediate electrodes 345A, 345B, and sixth intermediate electrodes 346A, 346B are arranged at a distance from one another.
  • the first intermediate electrodes 341A, 341B are formed over most of the substrate surface of the back substrate 27B.
  • the first intermediate electrodes 341A, 341B include recesses and openings that avoid the second intermediate electrodes 342A-342D, the third intermediate electrodes 343A-343D, the fourth intermediate electrodes 344A, 344B, the fifth intermediate electrodes 345A, 345B, and the sixth intermediate electrodes 346A, 346B.
  • the first intermediate electrode 341A is an electrode that electrically connects the first surface electrode 301A and the fourth surface electrodes 304A to 304D (see FIG. 28 for both).
  • the shape of the first intermediate electrode 341A in a planar view is the same as the shape of the first intermediate electrode 321A of the surface-side intermediate electrode 28C in a planar view (see FIG. 30).
  • the first intermediate electrode 341B is an electrode electrically connected to the first surface electrode 301B (see FIG. 28) and the first back surface electrodes 311B to 311D (see FIG. 29).
  • the first intermediate electrode 341B is electrically connected to the first intermediate electrode 321B.
  • the first intermediate electrode 341B is formed so as to surround the first intermediate electrode 341A from the first substrate side surface 23, the second substrate side surface 24, and the fourth substrate side surface 26.
  • the second intermediate electrode 342A is an electrode electrically connected to both the third surface electrode 303A (see FIG. 28) and the second back surface electrode 312A (see FIG. 29).
  • the second intermediate electrode 342B is an electrode electrically connected to both the third surface electrode 303B (see FIG. 28) and the second back surface electrode 312B (see FIG. 29).
  • the second intermediate electrode 342C is an electrode electrically connected to both the third surface electrode 303C (see FIG. 28) and the second back surface electrode 312C (see FIG. 29).
  • the second intermediate electrode 342D is an electrode electrically connected to both the third surface electrode 303D (see FIG. 28) and the second back surface electrode 312D (see FIG. 29).
  • the second intermediate electrodes 342A to 342D are individually electrically connected to the second intermediate electrodes 322A to 322D (see FIG. 30).
  • the shape, size, and arrangement of the second intermediate electrodes 342A-342D are the same as those of the second intermediate electrodes 322A-322D.
  • the third intermediate electrode 343A is an electrode electrically connected to both the sixth surface electrode 306A (see FIG. 28) and the fourth back surface electrode 314A (see FIG. 29).
  • the third intermediate electrode 343B is an electrode electrically connected to both the sixth surface electrode 306B (see FIG. 28) and the fourth back surface electrode 314B (see FIG. 29).
  • the third intermediate electrode 343C is an electrode electrically connected to both the sixth surface electrode 306C (see FIG. 28) and the fourth back surface electrode 314C (see FIG. 29).
  • the third intermediate electrode 343D is an electrode electrically connected to both the sixth surface electrode 306D (see FIG. 28) and the fourth back surface electrode 314D (see FIG. 29).
  • the third intermediate electrodes 343A and 343C are electrically connected to the sixth intermediate electrode 326A.
  • the third intermediate electrodes 343B and 343D are electrically connected to the sixth intermediate electrode 326B.
  • the third intermediate electrodes 343A to 343D are formed in a circular shape in a planar view.
  • the third intermediate electrodes 343A and 343C are arranged closer to the first substrate side surface 23 than the virtual center line VC in the X direction.
  • the third intermediate electrode 343C is arranged closer to the first substrate side surface 23 than the third intermediate electrode 343A.
  • the third intermediate electrodes 343B and 343D are arranged closer to the second substrate side surface 24 than the virtual center line VC in the X direction.
  • the third intermediate electrode 343D is arranged closer to the second substrate side surface 24 than the third intermediate electrode 343B.
  • the fourth intermediate electrode 344A is electrically connected to each of the seventh surface electrode 307A, the eighth surface electrode 308A (see FIG. 28), the fifth back surface electrode 315A, and the sixth back surface electrode 316A (see FIG. 29).
  • the fourth intermediate electrode 344B is electrically connected to each of the seventh surface electrode 307B, the eighth surface electrode 308B (see FIG. 28), the fifth back surface electrode 315B, and the sixth back surface electrode 316B (see FIG. 29).
  • the fourth intermediate electrode 344A is electrically connected to the third intermediate electrode 323A and the fourth intermediate electrode 324A (see FIG. 30).
  • the fourth intermediate electrode 344B is electrically connected to the third intermediate electrode 323B and the fourth intermediate electrode 324B (see FIG. 30).
  • the fourth intermediate electrode 344A includes a base 344AA and an extension 344AB extending from the base 344AA.
  • the base 344AA is formed in a square shape in a plan view.
  • the fourth intermediate electrode 344A is electrically connected to the eighth surface electrode 308A (sixth back surface electrode 316A) at the base 344AA.
  • the extension 344AB extends toward the seventh surface electrode 307A (fifth back surface electrode 315A).
  • the fourth intermediate electrode 344A is electrically connected to the seventh surface electrode 307A (fifth back surface electrode 315A) at the tip of the extension 344AB.
  • the fourth intermediate electrode 344B includes a base 344BA and an extension 344BB extending from the base 344BA.
  • the base 344BA is formed in a square shape in a plan view.
  • the fourth intermediate electrode 344B is electrically connected to the eighth surface electrode 308B (sixth back surface electrode 316B) at the base 344BA.
  • the extension 344BB extends toward the seventh surface electrode 307B (fifth back surface electrode 315B).
  • the fourth intermediate electrode 344B is electrically connected to the seventh surface electrode 307B (fifth back surface electrode 315B) at the tip of the extension 344BB.
  • the fifth intermediate electrode 345A is electrically connected to both the seventh surface electrode 307C, the ninth surface electrode 309A (see FIG. 28), the fifth back surface electrode 315C, and the seventh back surface electrode 317A (see FIG. 29).
  • the fifth intermediate electrode 345B is electrically connected to both the seventh surface electrode 307D, the ninth surface electrode 309B (see FIG. 28), the fifth back surface electrode 315D, and the seventh back surface electrode 317B (see FIG. 29).
  • the fifth intermediate electrode 345A is electrically connected to the third intermediate electrode 323C and the fifth intermediate electrode 325A (see FIG. 30).
  • the fifth intermediate electrode 345B is electrically connected to the third intermediate electrode 323D and the fifth intermediate electrode 325B (see FIG. 30).
  • the fifth intermediate electrode 345A includes a base 345AA and an extension 345AB extending from the base 345AA.
  • the base 345AA is formed in a square shape in a plan view.
  • the fifth intermediate electrode 345A is electrically connected to the ninth surface electrode 309A (seventh back surface electrode 317A) at the base 345AA.
  • the extension 345AB extends toward the seventh surface electrode 307C (fifth back surface electrode 315C).
  • the fifth intermediate electrode 345A is electrically connected to the seventh surface electrode 307C (fifth back surface electrode 315C) at the tip of the extension 345AB.
  • the fifth intermediate electrode 345B includes a base 345BA and an extension 345BB extending from the base 345BA.
  • the base 345BA is formed in a square shape in a plan view.
  • the fifth intermediate electrode 345B is electrically connected to the ninth surface electrode 309B (seventh back surface electrode 317B) at the base 345BA.
  • the extension 345BB extends toward the seventh surface electrode 307D (fifth back surface electrode 315D).
  • the fifth intermediate electrode 345B is electrically connected to the seventh surface electrode 307D (fifth back surface electrode 315D) at the tip of the extension 345BB.
  • the sixth intermediate electrode 346A is electrically connected to both the tenth surface electrode 310A (see FIG. 28) and the eighth back surface electrode 318A (see FIG. 29).
  • the sixth intermediate electrode 346B is electrically connected to both the tenth surface electrode 310B (see FIG. 28) and the eighth back surface electrode 318B (see FIG. 29).
  • the sixth intermediate electrode 346A is electrically connected to the sixth intermediate electrode 326A (see FIG. 30).
  • the sixth intermediate electrode 346B is electrically connected to the sixth intermediate electrode 326B (see FIG. 30).
  • the sixth intermediate electrodes 346A and 346B are formed in a square shape in a plan view.
  • the bases 344AA, 344BA of the fourth intermediate electrodes 344A, 344B, the bases 345AA, 345BA of the fifth intermediate electrodes 345A, 345B, and the sixth intermediate electrodes 346A, 346B are disposed in positions on the rear substrate 27B adjacent to the fourth substrate side surface 26 in the Y direction.
  • the base 344AA of the fourth intermediate electrode 344A, the base 345AA of the fifth intermediate electrode 345A, and the sixth intermediate electrode 346A are arranged at the end of the back surface base material 27B closer to the first substrate side surface 23 in the X direction.
  • the bases 344AA, 345AA, and the sixth intermediate electrode 346A are arranged at the same position as each other in the Y direction and spaced apart from each other in the X direction.
  • the bases 344AA, 345AA, and the sixth intermediate electrode 346A are arranged in this order from the imaginary center line VC toward the first substrate side surface 23.
  • the base 344BA of the fourth intermediate electrode 344B, the base 345BA of the fifth intermediate electrode 345B, and the sixth intermediate electrode 346B are arranged at the end of the back surface base material 27B closer to the second substrate side surface 24 in the X direction.
  • the bases 344BA, 345BA, and the sixth intermediate electrode 346B are arranged at the same position as each other in the Y direction and spaced apart from each other in the X direction.
  • the bases 344BA, 345BA, and the sixth intermediate electrode 346B are arranged in this order from the imaginary center line VC toward the first substrate side surface 23.
  • the substrate 20 includes first vias 351A to 351D, second vias 352A to 352D, third vias 353A to 353D, fourth vias 354A to 354D, fifth vias 355A, 355B, sixth vias 356A, 356B, seventh vias 357A, 357B, eighth vias 358A, 358B, and ninth vias 359A, 359B.
  • the first vias 351A to 351D, the second vias 352A to 352D, the third vias 353A to 353D, the fourth vias 354A to 354D, the fifth vias 355A, 355B, the sixth vias 356A, 356B, the seventh vias 357A, 357B, the eighth vias 358A, 358B, and the ninth vias 359A, 359B are arranged to penetrate the substrates 27A, 27B, 27C, the front side intermediate electrode 28C, and the back side intermediate electrode 28D in the Z direction.
  • the first vias 351A-351D, the second vias 352A-352D, the third vias 353A-353D, the fourth vias 354A-354D, the fifth vias 355A, 355B, the sixth vias 356A, 356B, the seventh vias 357A, 357B, the eighth vias 358A, 358B, and the ninth vias 359A, 359B are formed from a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the first via 351A is electrically connected to the first surface electrode 301A, the first intermediate electrode 321A of the surface-side intermediate electrode 28C, the first intermediate electrode 341A of the back-side intermediate electrode 28D, and the first back-side electrode 311A.
  • the first surface electrode 301A, the first intermediate electrode 321A, the first intermediate electrode 341A, and the first back-side electrode 311A are electrically connected to each other.
  • a plurality of first vias 351A are provided.
  • the arrangement of the plurality of first vias 351A relative to the first surface electrode 301A is the same as the arrangement of the plurality of first vias 331A relative to the first surface electrode 301A in the fifth embodiment.
  • the first vias 351B to 351D are electrically connected to the first surface electrode 301B, the first intermediate electrode 321B of the surface-side intermediate electrode 28C, the first intermediate electrode 341B of the back-side intermediate electrode 28D, and the first back-side electrodes 311B to 311D.
  • the first surface electrode 301B, the first intermediate electrode 321B, the first intermediate electrode 341B, and the first back-side electrodes 311B to 311D are electrically connected to each other.
  • the first vias 351B are provided in multiple locations at the end of the first surface electrode 301B closer to the first substrate side surface 23 and the third substrate side surface 25.
  • the first vias 351C are provided in multiple locations at the end of the first surface electrode 301B closer to the second substrate side surface 24 and the third substrate side surface 25.
  • the first vias 351D are provided at the end of the first surface electrode 301B closer to the fourth substrate side surface 26, and are located near the center in the X direction.
  • the second vias 352A to 352D are provided around the first surface electrode 301A.
  • a plurality of the second vias 352A to 352D are provided.
  • the second via 352A is electrically connected to the third surface electrode 303A, the second intermediate electrode 322A of the front-side intermediate electrode 28C, the second intermediate electrode 342A of the rear-side intermediate electrode 28D, and the second rear-side electrode 312A.
  • the third surface electrode 303A, the second intermediate electrode 322A, the second intermediate electrode 342A, and the second rear-side electrode 312A are electrically connected to each other.
  • the second via 352B is electrically connected to the third surface electrode 303B, the second intermediate electrode 322B of the front-side intermediate electrode 28C, the second intermediate electrode 342B of the rear-side intermediate electrode 28D, and the second rear-side electrode 312B.
  • the third surface electrode 303B, the second intermediate electrode 322B, the second intermediate electrode 342B, and the second back surface electrode 312B are electrically connected to each other.
  • the second via 352C is electrically connected to the third surface electrode 303C, the second intermediate electrode 322C of the front surface intermediate electrode 28C, the second intermediate electrode 342C of the back surface intermediate electrode 28D, and the second back surface electrode 312C.
  • the third surface electrode 303C, the second intermediate electrode 322C, the second intermediate electrode 342C, and the second back surface electrode 312C are electrically connected to each other.
  • the second via 352D is electrically connected to the third surface electrode 303D, the second intermediate electrode 322D of the front surface intermediate electrode 28C, the second intermediate electrode 342D of the back surface intermediate electrode 28D, and the second back surface electrode 312D.
  • the third surface electrode 303D, the second intermediate electrode 322D, the second intermediate electrode 342D, and the second back surface electrode 312D are electrically connected to each other.
  • the third via 353A is electrically connected to the fourth surface electrode 304A, the first intermediate electrode 321A of the front-side intermediate electrode 28C, the first intermediate electrode 341A of the back-side intermediate electrode 28D, and the third back-side electrode 313A.
  • the fourth surface electrode 304A, the first intermediate electrode 321A, the first intermediate electrode 341A, and the third back-side electrode 313A are electrically connected to each other.
  • the third via 353B is electrically connected to the fourth surface electrode 304B, the first intermediate electrode 321A of the front-side intermediate electrode 28C, the first intermediate electrode 341A of the back-side intermediate electrode 28D, and the third back-side electrode 313B.
  • the fourth surface electrode 304B, the first intermediate electrode 321A, the first intermediate electrode 341A, and the third back-side electrode 313B are electrically connected to each other.
  • the third via 353C is electrically connected to the fourth surface electrode 304C, the first intermediate electrode 321A of the surface-side intermediate electrode 28C, the first intermediate electrode 341A of the back-side intermediate electrode 28D, and the third back-side electrode 313C.
  • the fourth surface electrode 304C, the first intermediate electrode 321A, the first intermediate electrode 341A, and the third back-side electrode 313C are electrically connected to each other.
  • the third via 353D is electrically connected to the fourth surface electrode 304D, the first intermediate electrode 321A of the surface-side intermediate electrode 28C, the first intermediate electrode 341A of the back-side intermediate electrode 28D, and the third back-side electrode 313D.
  • the fourth surface electrode 304D, the first intermediate electrode 321A, the first intermediate electrode 341A, and the third back-side electrode 313D are electrically connected to each other.
  • the fourth surface electrodes 304A to 304D are electrically connected to each other via the first intermediate electrode 321A.
  • the fourth via 354A is electrically connected to the sixth surface electrode 306A, the sixth intermediate electrode 326A of the surface-side intermediate electrode 28C, the third intermediate electrode 343A of the back-side intermediate electrode 28D, and the fourth back-side electrode 314A.
  • the sixth surface electrode 306A, the sixth intermediate electrode 326A, the third intermediate electrode 343A, and the fourth back-side electrode 314A are electrically connected to each other.
  • the fourth via 354B is electrically connected to the sixth surface electrode 306B, the sixth intermediate electrode 326B of the surface-side intermediate electrode 28C, the third intermediate electrode 343B of the back-side intermediate electrode 28D, and the fourth back-side electrode 314B.
  • the sixth surface electrode 306B, the sixth intermediate electrode 326B, the third intermediate electrode 343B, and the fourth back-side electrode 314B are electrically connected to each other.
  • the fourth via 354C is electrically connected to the sixth surface electrode 306C, the sixth intermediate electrode 326A of the surface-side intermediate electrode 28C, the third intermediate electrode 343C of the back-side intermediate electrode 28D, and the fourth back-side electrode 314C.
  • the sixth surface electrode 306C, the sixth intermediate electrode 326A, the third intermediate electrode 343C, and the fourth back-side electrode 314C are electrically connected to each other.
  • the fourth via 354D is electrically connected to the sixth surface electrode 306D, the sixth intermediate electrode 326B of the surface-side intermediate electrode 28C, the third intermediate electrode 343D of the back-side intermediate electrode 28D, and the fourth back-side electrode 314D.
  • the sixth surface electrode 306D, the sixth intermediate electrode 326B, the third intermediate electrode 343D, and the fourth back-side electrode 314D are electrically connected to each other.
  • the fifth via 355A is electrically connected to the seventh surface electrode 307A, the third intermediate electrode 323A of the surface-side intermediate electrode 28C, the fourth intermediate electrode 344A of the back-side intermediate electrode 28D, and the fifth back-side electrode 315A.
  • the seventh surface electrode 307A, the third intermediate electrode 323A, the fourth intermediate electrode 344A, and the fifth back-side electrode 315A are electrically connected to each other.
  • the fifth via 355B is electrically connected to the seventh surface electrode 307B, the third intermediate electrode 323B of the surface-side intermediate electrode 28C, the fourth intermediate electrode 344B of the back-side intermediate electrode 28D, and the fifth back-side electrode 315B.
  • the seventh surface electrode 307B, the third intermediate electrode 323B, the fourth intermediate electrode 344B, and the fifth back-side electrode 315B are electrically connected to each other.
  • the sixth via 356A is electrically connected to the eighth surface electrode 308A, the fourth intermediate electrode 324A of the surface-side intermediate electrode 28C, the fourth intermediate electrode 344A of the back-side intermediate electrode 28D, and the sixth back-side electrode 316A.
  • the eighth surface electrode 308A, the fourth intermediate electrode 324A, the fourth intermediate electrode 344A, and the sixth back-side electrode 316A are electrically connected to one another.
  • the sixth via 356B is electrically connected to the eighth surface electrode 308B, the fourth intermediate electrode 324B of the surface-side intermediate electrode 28C, the fourth intermediate electrode 344B of the back-side intermediate electrode 28D, and the sixth back-side electrode 316B.
  • the eighth surface electrode 308B, the fourth intermediate electrode 324B, the fourth intermediate electrode 344B, and the sixth back-side electrode 316B are electrically connected to one another.
  • the seventh via 357A is electrically connected to the seventh surface electrode 307C, the third intermediate electrode 323C of the surface-side intermediate electrode 28C, the fifth intermediate electrode 345A of the back-side intermediate electrode 28D, and the fifth back-side electrode 315C.
  • the seventh surface electrode 307C, the third intermediate electrode 323C, the fifth intermediate electrode 345A, and the fifth back-side electrode 315C are electrically connected to each other.
  • the seventh via 357B is electrically connected to the seventh surface electrode 307D, the third intermediate electrode 323D of the surface-side intermediate electrode 28C, the fifth intermediate electrode 345B of the back-side intermediate electrode 28D, and the fifth back-side electrode 315D.
  • the seventh surface electrode 307D, the third intermediate electrode 323D, the fifth intermediate electrode 345B, and the fifth back-side electrode 315D are electrically connected to each other.
  • the eighth via 358A is electrically connected to the ninth surface electrode 309A, the fifth intermediate electrode 325A of the surface-side intermediate electrode 28C, the fifth intermediate electrode 345A of the back-side intermediate electrode 28D, and the seventh back-side electrode 317A.
  • the ninth surface electrode 309A, the fifth intermediate electrode 325A, the fifth intermediate electrode 345A, and the seventh back-side electrode 317A are electrically connected to one another.
  • the eighth via 358B is electrically connected to the ninth surface electrode 309B, the fifth intermediate electrode 325B of the surface-side intermediate electrode 28C, the fifth intermediate electrode 345B of the back-side intermediate electrode 28D, and the seventh back-side electrode 317B.
  • the ninth surface electrode 309B, the fifth intermediate electrode 325B, the fifth intermediate electrode 345B, and the seventh back-side electrode 317B are electrically connected to one another.
  • the ninth via 359A is electrically connected to the tenth surface electrode 310A, the sixth intermediate electrode 326A of the surface-side intermediate electrode 28C, the sixth intermediate electrode 346A of the back-side intermediate electrode 28D, and the eighth back-side electrode 318A.
  • the tenth surface electrode 310A, the sixth intermediate electrode 326A, the sixth intermediate electrode 346A, and the eighth back-side electrode 318A are electrically connected to one another.
  • the ninth via 359B is electrically connected to the tenth surface electrode 310B, the sixth intermediate electrode 326B of the surface-side intermediate electrode 28C, the sixth intermediate electrode 346B of the back-side intermediate electrode 28D, and the eighth back-side electrode 318B.
  • the tenth surface electrode 310B, the sixth intermediate electrode 326B, the sixth intermediate electrode 346B, and the eighth back-side electrode 318B are electrically connected to one another.
  • the first surface electrode 301A and the fourth surface electrodes 304A to 304D are electrically connected to the first back surface electrode 311A, and the first surface electrode 301B is electrically connected to the first back surface electrodes 311B to 311D.
  • the third surface electrodes 303A to 303D are individually electrically connected to the second back surface electrodes 312A to 312D.
  • the sixth surface electrodes 306A and 306C are electrically connected to the eighth back surface electrode 318A, and the sixth surface electrodes 306B and 306D are electrically connected to the eighth back surface electrode 318B.
  • the seventh surface electrode 307A is electrically connected to the sixth back surface electrode 316A
  • the seventh surface electrode 307B is electrically connected to the sixth back surface electrode 316B
  • the seventh surface electrode 307C is electrically connected to the seventh back surface electrode 317A
  • the seventh surface electrode 307D is electrically connected to the seventh back surface electrode 317B.
  • the layout and mounting of the semiconductor light emitting element 30, the first to fourth protection diodes 101 to 104, the first to fourth reverse current prevention diodes 261 to 264, and the first to fourth capacitors 271 to 274 are the same as those in the fifth embodiment, and therefore the description thereof will be omitted.
  • the layout of the first to fourth light emitting switching elements 291W to 291Z, the first to fourth gate driver ICs 292W to 292Z, and the first to fourth capacitors 293W to 293Z is different from that in the fifth embodiment.
  • the layout of the first to fourth light emitting switching elements 291W to 291Z, the first to fourth gate driver ICs 292W to 292Z, and the first to fourth capacitors 293W to 293Z will be described below.
  • the first and second protection diodes 101, 102, the first and second backflow prevention diodes 261, 262, and the first and second capacitors 271, 272 are arranged between the first light-emitting switching element 291W and the second light-emitting switching element 291X and the semiconductor light-emitting element 30 in the Y direction.
  • the third light-emitting switching element 291Y and the fourth light-emitting switching element 291Z are arranged at a position where they partially overlap the semiconductor light-emitting element 30 when viewed from the X direction.
  • the third light-emitting switching element 291Y and the fourth light-emitting switching element 291Z are arranged in a distributed manner on both sides of the semiconductor light-emitting element 30 in the X direction.
  • the third light-emitting switching element 291Y is arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the third capacitor 273 in the X direction.
  • the third protection diode 103, the third backflow prevention diode 263, and the third capacitor 273 are arranged between the third light-emitting switching element 291Y and the semiconductor light-emitting element 30 in the X direction.
  • the fourth light-emitting switching element 291Z is arranged on the opposite side of the semiconductor light-emitting element 30 with respect to the fourth capacitor 274 in the X direction. Therefore, the fourth protection diode 104, the fourth backflow prevention diode 264, and the fourth capacitor 274 are arranged between the fourth light-emitting switching element 291Z and the semiconductor light-emitting element 30 in the X direction.
  • the first to fourth gate driver ICs 292W to 292Z are mounted on the fifth surface electrodes 305A to 305D, the sixth surface electrodes 306A to 306D, the seventh surface electrodes 307A to 307D, and the first surface electrode 301B.
  • the first to fourth gate driver ICs 292W to 292Z are mounted on the surface electrode 28A in the same manner as in the fifth embodiment.
  • the first gate driver IC 292W is disposed adjacent to the first light-emitting switching element 291W
  • the second gate driver IC 292X is disposed adjacent to the second light-emitting switching element 291X
  • the third gate driver IC 292Y is disposed adjacent to the third light-emitting switching element 291Y
  • the fourth gate driver IC 292Z is disposed adjacent to the fourth light-emitting switching element 291Z.
  • the first gate driver IC 292W is electrically connected to the gate electrode of the first light-emitting switching element 291W via the fifth surface electrode 305A.
  • the sixth surface electrode 306A is electrically connected to the control power supply 807A (see FIG. 27). As a result, power is supplied to the first gate driver IC 292W from the control power supply 807A via the sixth surface electrode 306A.
  • the seventh surface electrode 307A is electrically connected to the pulse generator 806A (see FIG. 27). As a result, a pulse signal from the pulse generator 806A is input to the first gate driver IC 292W via the seventh surface electrode 307A.
  • the first to fourth capacitors 293W to 293Z are mounted on the sixth surface electrodes 306A to 306D and the first surface electrode 301B.
  • the manner in which the first to fourth capacitors 293W to 293Z are mounted on the surface electrode 28A is the same as in the fifth embodiment.
  • the first capacitor 293W is disposed adjacent to the first gate driver IC 292W in the X direction.
  • the first capacitor 293W is disposed on the opposite side of the first light-emitting switching element 291W with respect to the first gate driver IC 292W in the X direction.
  • the second capacitor 293X is disposed adjacent to the second gate driver IC 292X in the X direction.
  • the second capacitor 293X is disposed on the opposite side of the second light-emitting switching element 291X with respect to the second gate driver IC 292X in the X direction.
  • the third capacitor 293Y is disposed adjacent to the third gate driver IC 292Y in the Y direction.
  • the third capacitor 293Y is disposed on the opposite side of the third light-emitting switching element 291Y with respect to the third gate driver IC 292Y in the Y direction.
  • the fourth capacitor 293Z is disposed in a position adjacent to the fourth gate driver IC 292Z in the Y direction.
  • the fourth capacitor 293Z is disposed on the opposite side of the fourth light-emitting switching element 291Z with respect to the fourth gate driver IC 292Z in the Y direction.
  • the lengths of the current path between the first light-emitting portion 33A and the first light-emitting switching element 291W, the current path between the second light-emitting portion 33B and the second light-emitting switching element 291X, the current path between the third light-emitting portion 33C and the third light-emitting switching element 291Y, and the current path between the fourth light-emitting portion 33D and the fourth light-emitting switching element 291Z can be adjusted to be equal to each other. Therefore, the variation in inductance of the current path between the first to fourth light-emitting portions 33A to 33D and the first to fourth light-emitting switching elements 291W to 291Z can be reduced.
  • the eight light emitting portions 33 of the semiconductor light emitting element 30 can be configured to include a first light emitting switching element and a first backflow prevention diode corresponding to the first light emitting portion 33A, and a second light emitting switching element and a second backflow prevention diode corresponding to the second light emitting portion 33B.
  • the semiconductor light emitting device 10 configured in this manner can achieve the same effects as the semiconductor light emitting device 10 of the sixth embodiment.
  • the first switching element 41 and the second switching element 51 may be vertical transistors having different configurations.
  • the first switching element 171 and the second switching element 181 may be horizontal transistors having different configurations.
  • the distance D3 between the semiconductor light-emitting element 30 and the third switching element 111 (221) in the X direction may be different from the distance D4 between the semiconductor light-emitting element 30 and the fourth switching element 121 (222) in the X direction.
  • the semiconductor light emitting device 10 may further include a gate driver IC that controls the first switching element 41 (171) of the first drive circuit 40 and the second switching element 51 (181) of the second drive circuit 50.
  • This gate driver IC may be provided for each switching element, or one may be provided for each set of multiple switching elements.
  • the semiconductor light emitting device 10 may further include a gate driver IC that controls the first switching element 41 (171) of the first drive circuit 40, the second switching element 51 (181) of the second drive circuit 50, the third switching element 111 (221) of the third drive circuit 110, and the fourth switching element 121 (222) of the fourth drive circuit 120.
  • This gate driver IC may be provided for each switching element, or one may be provided for each set of multiple switching elements.
  • the arrangement of the first switching element 41, the first capacitor 42, the first protection diode 101, the second switching element 51, the second capacitor 52, and the second protection diode 102 can be changed as desired.
  • the arrangement of the first to fourth switching elements 41, 51, 111, 121, the first to fourth capacitors 42, 52, 112, 122, and the first to fourth protection diodes 101 to 104 can be changed as desired.
  • the arrangement of the first switching element 171, the first capacitor 42, the first protection diode 101, the second switching element 181, the second capacitor 52, and the second protection diode 102 can be changed as desired.
  • the arrangement of the first to fourth switching elements 171, 181, 221, 222, the first to fourth capacitors 42, 52, 112, 122, and the first to fourth protection diodes 101 to 104 can be changed as desired.
  • the semiconductor light emitting device 10 may include first to fourth charging switching elements 808A to 808D.
  • the first driving circuit 40 includes a first charging switching element 808A and a first capacitor 271.
  • the second driving circuit 50 includes a second charging switching element 808B and a second capacitor 272.
  • the third driving circuit 110 includes a third charging switching element 808C and a third capacitor 273.
  • the fourth driving circuit 120 includes a fourth charging switching element 808D and a fourth capacitor 274.
  • the arrangement of the first to fourth reverse current prevention diodes 261 to 264, the first to fourth capacitors 271 to 274, and the first to fourth protection diodes 281 to 284 can be changed as desired.
  • one of the first capacitor 42 and the first switching element 41 (171) may be omitted from the first drive circuit 40.
  • One of the second capacitor 52 and the second switching element 51 (181) may be omitted from the second drive circuit 50.
  • one of the third capacitor 112 and the third switching element 111 (221) may be omitted from the third drive circuit 110.
  • One of the fourth capacitor 122 and the fourth switching element 121 (222) may be omitted from the fourth drive circuit 120.
  • the first protection diode 101 and the second protection diode 102 may be omitted from the semiconductor light emitting device 10.
  • the third protection diode 103 and the fourth protection diode 104 may be omitted from the semiconductor light emitting device 10 .
  • the arrangement of the first capacitors 42 is not limited to being spaced apart in the X direction, but can be changed as desired.
  • the arrangement of the second capacitors 52 is not limited to being spaced apart in the X direction, but can be changed as desired.
  • the arrangement of the third capacitors 112 is not limited to being spaced apart in the Y direction, but can be changed as desired.
  • the arrangement of the fourth capacitors 122 is not limited to being spaced apart in the Y direction, but can be changed as desired.
  • the number of the first capacitors 42 may be one.
  • the number of the second capacitors 52 may be one.
  • the number of the third capacitors 112 may be one.
  • the number of the fourth capacitors 122 may be one.
  • the number of light-emitting sections 33 of the semiconductor light-emitting element 30 can be changed as desired.
  • the semiconductor light-emitting device 10 when a semiconductor light-emitting element 30 including four light-emitting sections 33 is used, the semiconductor light-emitting device 10 may be configured to drive a first light-emitting section 33A and a second light-emitting section 33B each including two light-emitting sections 33.
  • the semiconductor light-emitting device 10 when a semiconductor light-emitting element 30 including four light-emitting sections 33 is used, the semiconductor light-emitting device 10 may be configured to drive first to fourth light-emitting sections 33A to 33D each including one light-emitting section 33.
  • the configuration of the semiconductor light-emitting element 30 is not limited to an edge-emitting laser element, and can be changed as desired.
  • an LED light-emitting diode
  • a VCSEL Vertical Cavity Surface Emitting Laser
  • the semiconductor light-emitting element 30 may be used as the semiconductor light-emitting element 30.
  • a and B should be understood to mean “A only, or B only, or both A and B.”
  • the term “on” as used in this disclosure includes the meanings of “on” and “above,” unless the context clearly indicates otherwise.
  • the expression “a first element is disposed on a second element” is intended to mean that in some embodiments, the first element may be in contact with the second element and disposed directly on the second element, while in other embodiments, the first element may be disposed above the second element without contacting the second element.
  • the term “on” does not exclude a structure in which another element is formed between the first element and the second element.
  • the Z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, the various structures according to this disclosure are not limited to the "up” and “down” of the Z direction described in this specification being “up” and “down” in the vertical direction.
  • the X direction may be the vertical direction
  • the Y direction may be the vertical direction.
  • the first drive circuit (40) includes a first switching element (41) that controls driving of the first light-emitting unit (33A) and a first capacitor (42) that supplies a current to the first light-emitting unit (33A);
  • the semiconductor light-emitting device described in Appendix A1 wherein the second drive circuit (50) includes a second switching element (51) that controls driving of the second light-emitting unit (33B) and a second capacitor (52) that supplies current to the second light-emitting unit (33B).
  • Both the first switching element (41) and the second switching element (51) include a source electrode (41S/51S) and a gate electrode (41G/51G) formed on a front surface (41A/51A) of the element, and a drain electrode (41D/51D) formed on a rear surface (41B/51B) of the element,
  • the semiconductor light emitting device according to Appendix A2 wherein the drain electrode (41D/51D) is mounted on the plurality of surface electrodes (28A).
  • the first switching element (41) and the second switching element (51) include a drain electrode (41D/51D), a source electrode (41S/51S), and a gate electrode (41G/51G),
  • the first capacitor (42) and the second capacitor (52) include a first electrode (42A/52A) and a second electrode (42B/52B),
  • the first element surface electrode (34A) constitutes a first anode electrode
  • the second element surface electrode (34B) constitutes a second anode electrode
  • the back electrode (35) of the element constitutes a cathode electrode
  • the source electrode (41S) of the first switching element (41) is electrically connected to the first anode electrode (34A)
  • the drain electrode (41D) of the first switching element (41) is electrically connected to the first electrode (42A) of the first capacitor (42);
  • the source electrode (51S) of the second switching element (51) is electrically connected to the second anode electrode (34B),
  • the semiconductor light-emitting device according to App
  • Appendix A7 The semiconductor light-emitting device described in Appendix A6, wherein a distance (D1) between the semiconductor light-emitting element (30) and the first switching element (41) in the first direction (Y direction) is equal to a distance (D2) between the semiconductor light-emitting element (30) and the second switching element (51) in the first direction (Y direction).
  • a direction perpendicular to the first direction (Y direction) when viewed from the thickness direction (Z direction) is defined as a second direction (X direction),
  • the first capacitors (42) are arranged apart from each other in the second direction (X direction),
  • the first drive circuit (40) includes a first switching element (41) that controls driving of the first light-emitting unit (33A) and a first capacitor (42) that supplies a current to the first light-emitting unit (33A);
  • the second drive circuit (50) includes a second switching element (51) that controls driving of the second light-emitting unit (33B) and a second capacitor (52) that supplies a current to the second light-emitting unit (33B);
  • the semiconductor light emitting element (30) and the first capacitor (42) are arranged apart from each other in a first direction (Y direction)
  • the first switching element (41) is disposed between the semiconductor light emitting element (30) and the first capacitor (42) in the first direction (Y direction),
  • the semiconductor light emitting element (30) and the second capacitor (52) are arranged apart from each other in the first direction (Y direction),
  • the thickness direction (Z direction) When viewed from the thickness direction (Z direction), the semiconductor light emitting element (30) and the second capacitor (52) are arranged apart from each other in the
  • the semiconductor light emitting element (30) includes a third light emitting portion (33C) and a fourth light emitting portion (33D), a third element surface electrode (34C) electrically connected to the third light emitting portion (33C), and a fourth element surface electrode (34D) electrically connected to the fourth light emitting portion (33D), a third drive circuit (110) electrically connected to the third element surface electrode (34C) and driving the third light-emitting portion (33C); a fourth drive circuit (120) electrically connected to the fourth element surface electrode (34D) and driving the fourth light-emitting unit (33D);
  • the third driving circuit (110) includes a third switching element (111) that controls driving of the third light-emitting unit (33C) and a third capacitor (112) that supplies a current to the third light-emitting unit (33C);
  • Appendix A16 The semiconductor light-emitting device described in Appendix A15, wherein a distance (D3) between the semiconductor light-emitting element (30) and the third switching element (111) in the second direction (X-direction) is equal to a distance (D4) between the semiconductor light-emitting element (30) and the fourth switching element (122) in the second direction (X-direction).
  • the semiconductor device further includes a first protection diode (281), a second protection diode (282), a first reverse current prevention diode (261), a second reverse current prevention diode (262), and a light emitting switching element (291),
  • the light-emitting switching element (291) includes a drain electrode (291D) and a source electrode (291S)
  • the first drive circuit (40) includes a first capacitor (271);
  • the second drive circuit (50) includes a second capacitor (272);
  • Each of the first capacitor (271) and the second capacitor (272) includes a first electrode (271A/272A) and a second electrode (271B/272B);
  • the first element surface electrode (34A) constitutes a first anode electrode
  • the second element surface electrode (34B) constitutes a second anode electrode
  • the back electrode (35) of the element constitutes a cathode electrode,
  • the anode of the first reverse current prevention diode (261) is electrically connected to the first electrode (271
  • Appendix A20 The semiconductor light emitting device according to Appendix A19, wherein the light emission switching element (291) includes a first light emission switching element (291W) and a second light emission switching element (291X) connected in parallel to each other.
  • the first switching element (41) and the second switching element (51) include a drain electrode (41D/51D), a source electrode (41S/51S), and a gate electrode (41G/51G),
  • the semiconductor light-emitting device described in Appendix A1 further includes a gate driver IC (292) electrically connected to the gate electrode (41G) of the first switching element (41) and the gate electrode (51G) of the second switching element (51) and driving the first switching element (41) and the second switching element (51).
  • a semiconductor light-emitting element including a first light-emitting section (33A) and a second light-emitting section (33B), a first light-emitting anode electrode (34A) electrically connected to the first light-emitting section (33A), a second light-emitting anode electrode (34B) electrically connected to the second light-emitting section (33B), and a light-emitting cathode electrode (35) electrically connected to both the first light-emitting section (33A) and the second light-emitting section (33B); a first reverse current prevention diode (261) including a first cathode (261B) electrically connected to the first light emitting anode electrode (34A) and a first anode (261A) electrically connected to a first charging switching element (808A); a second reverse current prevention diode (262) including a second cathode (262B) electrically connected to the second light emitting anode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
PCT/JP2024/024683 2023-07-28 2024-07-09 半導体発光装置 Pending WO2025028177A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025537791A JPWO2025028177A1 (https=) 2023-07-28 2024-07-09

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-123646 2023-07-28
JP2023123646 2023-07-28

Publications (1)

Publication Number Publication Date
WO2025028177A1 true WO2025028177A1 (ja) 2025-02-06

Family

ID=94395153

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2024/024683 Pending WO2025028177A1 (ja) 2023-07-28 2024-07-09 半導体発光装置

Country Status (2)

Country Link
JP (1) JPWO2025028177A1 (https=)
WO (1) WO2025028177A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015002188A1 (ja) * 2013-07-02 2015-01-08 住友ベークライト株式会社 光モジュール用部材、光モジュールおよび電子機器
US20180278011A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module
WO2020116165A1 (ja) * 2018-12-05 2020-06-11 ローム株式会社 半導体レーザ装置
WO2021014917A1 (ja) * 2019-07-23 2021-01-28 ローム株式会社 半導体レーザ装置
WO2022102411A1 (ja) * 2020-11-13 2022-05-19 ローム株式会社 半導体発光装置
WO2023100887A1 (ja) * 2021-11-30 2023-06-08 ローム株式会社 半導体発光装置および半導体発光ユニット

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015002188A1 (ja) * 2013-07-02 2015-01-08 住友ベークライト株式会社 光モジュール用部材、光モジュールおよび電子機器
US20180278011A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module
WO2020116165A1 (ja) * 2018-12-05 2020-06-11 ローム株式会社 半導体レーザ装置
WO2021014917A1 (ja) * 2019-07-23 2021-01-28 ローム株式会社 半導体レーザ装置
WO2022102411A1 (ja) * 2020-11-13 2022-05-19 ローム株式会社 半導体発光装置
WO2023100887A1 (ja) * 2021-11-30 2023-06-08 ローム株式会社 半導体発光装置および半導体発光ユニット

Also Published As

Publication number Publication date
JPWO2025028177A1 (https=) 2025-02-06

Similar Documents

Publication Publication Date Title
US11942411B2 (en) Semiconductor device
JP5886584B2 (ja) 半導体発光装置
TWI747111B (zh) 發光二極體晶片
EP2658000B1 (en) Substrate, light-emitting device, and illumination device
JP5481277B2 (ja) 発光装置
JP7642379B2 (ja) 半導体発光装置
US12586981B2 (en) Semiconductor laser device
US12074161B2 (en) Semiconductor device
CN118198850A (zh) 半导体激光装置
CN218102029U (zh) 一种ld封装结构
WO2025028177A1 (ja) 半導体発光装置
US20190386190A1 (en) Led module
US20250266388A1 (en) Semiconductor device
KR101676061B1 (ko) 광전 소자 조립체
CN115280520B (zh) 发光装置
JP2010251796A (ja) 発光モジュール
KR20070070237A (ko) 정합형 발광 다이오드 및 그 제조방법
JP2018050058A (ja) 半導体発光装置
JP2022041267A (ja) 半導体装置および半導体ユニット
WO2025028178A1 (ja) 半導体発光装置
WO2024092594A1 (zh) 显示基板及透明显示装置
CN115995472A (zh) 光半导体元件
JP5669525B2 (ja) 半導体発光装置
JP7784328B2 (ja) 半導体発光素子、半導体発光装置及び半導体発光装置モジュール
JP7790949B2 (ja) 半導体発光装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24848836

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2025537791

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2025537791

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE