WO2025002232A1 - 工艺腔室、半导体工艺设备和薄膜沉积方法 - Google Patents

工艺腔室、半导体工艺设备和薄膜沉积方法 Download PDF

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Publication number
WO2025002232A1
WO2025002232A1 PCT/CN2024/101917 CN2024101917W WO2025002232A1 WO 2025002232 A1 WO2025002232 A1 WO 2025002232A1 CN 2024101917 W CN2024101917 W CN 2024101917W WO 2025002232 A1 WO2025002232 A1 WO 2025002232A1
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WIPO (PCT)
Prior art keywords
wafer
heating chamber
chamber
lifting device
heating
Prior art date
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Ceased
Application number
PCT/CN2024/101917
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English (en)
French (fr)
Inventor
张世豪
佘清
李冰
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to KR1020257040538A priority Critical patent/KR20260005995A/ko
Priority to EP24830865.2A priority patent/EP4737609A1/en
Publication of WO2025002232A1 publication Critical patent/WO2025002232A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of semiconductor manufacturing, and in particular, to a process chamber, semiconductor process equipment and a thin film deposition method.
  • Magnetron sputtering is a type of physical vapor deposition (PVD) technology and is the most widely used thin film manufacturing technology in the semiconductor industry.
  • PVD physical vapor deposition
  • copper with lower resistivity has gradually replaced other materials and has been widely used in the back-end interconnection process of semiconductor manufacturing.
  • the copper Damascus structure first forms through holes and interconnection line grooves in the metal interlayer by etching, and then deposits a barrier layer (such as TiN) and a copper seed layer by PVD, and then deposits a large amount of copper by chemical electroplating.
  • a barrier layer such as TiN
  • the present application aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber, a semiconductor process equipment and a thin film deposition method, which can improve the heating efficiency and heating uniformity of the wafer.
  • a process chamber comprising:
  • a reaction chamber in which a susceptor for carrying a wafer is arranged
  • a heating chamber is connected to the reaction chamber;
  • a heat radiation device is provided on the top of the heating chamber for radiating heat toward the interior of the heating chamber;
  • the transmission device is arranged in the reaction chamber, and is used for carrying the wafer, and can transmit the wafer between the reaction chamber and the heating chamber.
  • a shielding plate is further stored in the heating chamber; the transport device is further used to carry the shielding plate and is capable of transporting the shielding plate between the reaction chamber and the heating chamber.
  • the transport device is used to transport the shielding plate stored in the heating chamber to above the susceptor before the reaction chamber performs a semiconductor process on the wafer, and to transport the shielding plate to the heating chamber when the reaction chamber starts to perform a semiconductor process on the wafer;
  • the transmission device is used for, after the wafer in the reaction chamber completes the semiconductor process, The wafer is transferred to below the heat radiation device so that the heat radiation device can heat the wafer, and after the heating is completed, the wafer is transferred to the susceptor.
  • a top wall of the heating chamber is provided with a reflective surface, and the reflective surface is used to reflect the heat radiated by the heat radiation device toward the surface of the wafer located in the heating chamber.
  • a top wall of the heating chamber is provided with a cooling channel, and the cooling channel is used to transmit a cooling fluid.
  • a recess is formed on the top wall of the heating chamber, an inner surface of the recess constitutes the reflecting surface, and a shape of the inner surface of the recess is configured to enable the reflected light to converge toward the surface of the wafer located in the heating chamber and cover the entire wafer surface.
  • the reflecting surface includes a plane and an annular surface surrounding the plane, wherein the plane is parallel to a horizontal plane, and the height of the annular surface decreases from the edge of the plane toward the edges of the top wall of the heating chamber.
  • the heat radiation device includes an annular light tube, which is arranged around the inner side of the annular surface and located outside the edge of the plane.
  • the heating chamber includes a chamber body having an opening at the top, and a reflecting plate arranged on the top of the chamber body, wherein the reflecting plate is sealed to the chamber body and is used to seal the opening; the reflecting plate has the reflecting surface, and the reflecting surface is exposed to the heating chamber from the opening.
  • a first annular convex portion is disposed at the opening at the top of the chamber body, a second annular convex portion is disposed at the outer peripheral edge of the reflector, the second annular convex portion is superimposed on the first annular convex portion, and the first annular convex portion is fixedly connected to the second annular convex portion;
  • a sealing member is further provided between the first annular protrusion and the second annular protrusion for sealing the opening.
  • the system further comprises: a first lifting device disposed in the heating chamber, the first lifting device being used to carry the shielding plate in the heating chamber;
  • At least one of the first lifting device and the transmission device can drive the shielding plate placed thereon to rise and fall, so as to realize the transfer of the shielding plate between the first lifting device and the transmission device.
  • the first lifting device when the transport device is to transport the wafer to the heating chamber, is used to drive the shielding plate placed thereon to descend to a position in the heating chamber that is lower than the position of the wafer carried by the transport device.
  • the invention further comprises: a second lifting device disposed in the reaction chamber, the second lifting device being used to carry the wafer in the reaction chamber;
  • At least one of the second lifting device and the base can drive the wafer placed thereon to rise and fall, so as to achieve the transfer of the wafer between the second lifting device and the base.
  • the transport device includes a transport arm and a second driving source, wherein the transport arm is used to carry the shielding disk or the wafer, and the second driving source is used to drive the transport arm to move between the reaction chamber and the heating chamber;
  • the transmission arm includes a vertically arranged rotating shaft, and a connecting arm and a bearing portion perpendicular to the rotating shaft, wherein the lower end of the rotating shaft is connected to the second driving source, the upper end of the rotating shaft is connected to one end of the connecting arm, and the other end of the connecting arm is connected to the bearing portion;
  • the second lifting device comprises a plurality of ejector pins arranged at intervals along the circumference of the susceptor, and when the supporting portion carries the shielding plate or the wafer and moves it into the reaction chamber, at least a portion of the supporting portion can move from the intervals between adjacent ejector pins of the second lifting device into the space surrounded by the plurality of ejector pins, so that the shielding plate or the wafer is located above the susceptor; or
  • the first lifting device includes a plurality of ejector pins arranged at intervals along the circumference of the base.
  • the supporting portion carries the shielding plate or the wafer and moves it into the heating chamber, at least a portion of the supporting portion can be moved from the intervals between adjacent ejector pins of the first lifting device into the space surrounded by the plurality of ejector pins, so that the shielding plate or the wafer is located below the heat radiation device.
  • the present application also provides a semiconductor process equipment, which includes the present application Please provide the above process chamber.
  • the semiconductor processing equipment includes a physical vapor deposition equipment.
  • the present application also provides a thin film deposition method, comprising:
  • the shielding plate in the heating chamber is lowered to a first carrying position in the heating chamber, and the heating chamber is connected to the reaction chamber;
  • Heat is radiated from the top of the heating chamber toward the wafer to perform thermal treatment on the wafer.
  • a wafer before performing a heat treatment process such as a metal reflow process, a wafer can be carried by a transmission device, and the wafer can be transferred from the reaction chamber to the heating chamber, and when performing the heat treatment process, a heat radiation device arranged at the top of the heating chamber is used to radiate heat toward the wafer inside the heating chamber, thereby heating the wafer and completing the heat treatment process.
  • This scheme is to heat the wafer in the heating chamber.
  • the volume of the heating chamber can be set to be smaller than that of the reaction chamber, this can make the heat distribution more concentrated and the heat loss smaller, thereby increasing the wafer heating rate; at the same time, by arranging the above-mentioned heat radiation device at the top of the heating chamber, the upper surface of the wafer can be directly heated, thereby further increasing the wafer heating rate; in addition, since the reaction chamber and the heating chamber are connected, the semiconductor process (such as deposition, etching, etc.) and the heat treatment process can be completed in one process chamber, thereby improving the semiconductor manufacturing efficiency.
  • the semiconductor process such as deposition, etching, etc.
  • FIG1 is a cross-sectional view of a physical vapor deposition apparatus provided in an embodiment of the present application.
  • FIG2 is a partial enlarged view of the heating chamber used in the embodiment of the present application.
  • FIG3 is a structural diagram of a transmission arm of a transmission device used in an embodiment of the present application.
  • FIG4 is a structural diagram of a transmission arm of a transmission device used in an embodiment of the present application when carrying a wafer;
  • FIG. 5 is a flow chart of a thin film deposition method provided in an embodiment of the present application.
  • the process chamber includes a chamber body, a shielding disk library connected to the interior of the chamber body, a shielding disk and a transmission mechanism, wherein a base and a pin mechanism are arranged in the chamber body; the base is used to carry the workpiece to be processed during the thin film deposition process; the pin mechanism transfers the wafer between the base by lifting, and the transmission mechanism is used to transfer the shielding disk in the shielding disk library to the base or above the wafer when using a new target material or preheating the chamber to avoid contamination of the base or wafer.
  • a heating element is arranged on the transmission arm of the transmission mechanism.
  • the pin mechanism lifts the wafer to the reflow process position, and the transmission arm rotates to the bottom of the wafer to heat the back of the wafer to achieve copper reflow.
  • the transmission arm is driven by the drive device to rotate to the shielding disk library.
  • the above-mentioned reflow process is implemented by using the heating element on the transfer arm to heat the back side of the wafer.
  • the tray area of the transfer arm is limited, and the area of the heating element cannot cover the entire back side of the wafer.
  • this heating method makes it difficult to concentrate the radiated heat on the wafer surface, resulting in more heat loss and lower wafer heating efficiency.
  • the process chamber provided in the embodiment of the present application includes a reaction chamber 1, a heating chamber 2 and a transmission device 4, wherein a base 3 for carrying a wafer 9 is provided in the reaction chamber 1, and the base 3 is, for example, an electrostatic chuck.
  • the base 3 is also electrically connected to the RF power supply to form a RF bias on the surface of the wafer 9.
  • a target material 7 is arranged above the base 3.
  • the target material 7 is electrically connected to the excitation power supply to excite the process gas (such as argon) in the reaction chamber 1 to form a plasma and bombard the target material 7.
  • the target material escaping from the target material 7 moves toward the surface of the wafer 9 under the action of the above-mentioned RF bias and is deposited on the surface of the wafer 9 to form a thin film.
  • a magnetron 8 is arranged above the target material 7.
  • the above-mentioned reaction chamber 1 can be applied to the deposition of thin films such as copper (Cu), ruthenium (Ru), cobalt (Co), molybdenum (Mo), tungsten (W), rhodium (Rh), titanium (Ti), tantalum (Ta), and aluminum (Al).
  • the heating chamber 2 is connected to the reaction chamber 1.
  • a heat radiation device 11 is provided on the top of the heating chamber 2 for radiating heat toward the inside of the heating chamber 2.
  • the above-mentioned transmission device 4 is used to carry the wafer 9, and can transfer the wafer 9 between the reaction chamber 1 and the heating chamber 2. In this way, before performing a heat treatment process such as a metal reflow process, the transmission device 4 can be used to carry the wafer 9, and the wafer 9 can be transferred from the reaction chamber 1 to the heating chamber 2.
  • the heat radiation device 11 provided on the top of the heating chamber 2 is used to radiate heat toward the wafer 9 inside the heating chamber 2, thereby heating the wafer 9 and completing the heat treatment process.
  • This solution is to heat the wafer 9 in the heating chamber 2. Since the volume of the heating chamber 2 can be set to be smaller than that of the reaction chamber 1, the heat distribution can be more concentrated and the heat loss can be smaller, thereby increasing the heating rate of the wafer 9. At the same time, by setting the above-mentioned heat radiation device 11 on the top of the heating chamber 2, the upper surface of the wafer 9 can be directly heated, and the area of the heat radiation device 11 can be set to be greater than or equal to the area of the wafer 9, so that the surface of the entire wafer 9 can be uniformly heated.
  • the heating chamber in the embodiment of the present application can be suitable for heat treatment processes such as reflow. Since the reaction chamber and the heating chamber are connected, various semiconductor processes (such as deposition, etching, etc.) and heat treatment processes can be completed in one process chamber, thereby improving the efficiency of semiconductor manufacturing.
  • a shielding plate 10 is also stored in the heating chamber 2, that is, the heating chamber 2 is used for both performing the heat treatment process and storing the shielding plate 10.
  • the process chamber is equipped with a shielding disk 10 and a shielding disk library for storing the shielding disk 10.
  • a shielding disk 10 When a new target material is used for a process, or when a process is repeated after a chamber maintenance, in order to prevent the metal that may be contaminated on the surface of the target material from being deposited on the surface of the wafer, it is usually necessary to preheat the chamber and bombard the contaminants on the surface of the target material before the normal semiconductor process.
  • the shielding disk 10 is used to shield the top of the base 3, and when the normal semiconductor process is performed, the shielding disk 10 needs to be moved to the shielding disk library connected to the reaction chamber 1.
  • the shielding disk library is used as the above-mentioned heating chamber 2, that is, for the process chamber that is already equipped with a shielding disk library, the original shielding disk library can be improved.
  • the shielding disk library can be used for both the heat treatment process and the storage of the shielding disk 10, so that there is no need to occupy the internal space of the reaction chamber 1, and there is no need to significantly improve the structure of the reaction chamber 1, thereby reducing the design difficulty and saving equipment costs.
  • the volume of the above-mentioned shielding disk library is smaller than that of the reaction chamber 1, which can make the heat distribution more concentrated and the heat loss smaller, thereby increasing the heating rate of the wafer 9.
  • the above-mentioned transmission device 4 is also used to carry the shielding disk 10, and can transmit the shielding disk 10 between the reaction chamber 1 and the heating chamber 2.
  • a pretreatment process such as preheating the chamber and bombarding off the contaminants on the surface of the target material.
  • the transmission device 4 is used to transmit the shielding disk 10 stored in the heating chamber 2 to the top of the susceptor 3, so that the shielding disk 10 can be used to shield the susceptor 3 during the pretreatment process to avoid contamination of the susceptor 3.
  • the shielding disk 10 is transmitted to the heating chamber 2 for storage to ensure the normal progress of the process. That is, before the semiconductor process is performed, the shielding disk 10 is first transmitted to the heating chamber 2 for storage.
  • the transfer device 4 can also be used to transfer the wafer to the bottom of the heat radiation device 11 in the heating chamber 2 after the semiconductor process is completed on the wafer in the reaction chamber 1, so that the heat radiation device 11 can heat the wafer, thereby completing the heat treatment of the wafer, and after the heating is completed, the wafer is transferred to the base 3.
  • the top wall of the heating chamber 2 is provided with a reflective surface 221, and the reflective surface 221 is used to reflect the heat radiated by the heat radiation device 11 to the surface of the wafer 9 located in the heating chamber 2.
  • the reflective surface 221 is provided on the surface of the top wall of the heating chamber 2 facing the inside of the heating chamber 2, and further, in some embodiments, the reflective surface 221 is a mirror surface, and the mirror surface is, for example, a curved surface with a finish less than or equal to Ra0.1.
  • the top wall of the heating chamber 2 is provided with a cooling channel, which is used to transmit a cooling fluid, such as cooling water, to cool the top wall of the heating chamber 2 during the heat treatment process, thereby avoiding burns to personnel due to the excessively high temperature of the outer surface of the top wall of the heating chamber 2.
  • a cooling fluid such as cooling water
  • FIG2 a recess 14 and a cover plate 15 for sealing the recess 14 are formed on the outer surface of the top wall of the heating chamber 2, and the recess 14 and the cover plate 15 are enclosed to form the above-mentioned cooling channel.
  • the outer surface of the cover plate 15 is flush with the outer surface of the top wall of the heating chamber 2, so that the outer surface of the cover plate 15 and the outer surface of the top wall of the heating chamber 2 can form a smooth and continuous surface together.
  • the embodiments of the present application are not limited to this.
  • the recessed channel 14 can also be formed on the reflecting surface 221, and the distribution of the above-mentioned cooling channel on the reflecting surface 221 or the outer surface of the top wall of the heating chamber 2 can be set according to specific needs.
  • the above-mentioned cooling channel is evenly distributed on the reflecting surface 221 or the outer surface of the top wall of the heating chamber 2.
  • a recess 222 is formed on the top wall of the heating chamber 2.
  • the recess 222 is specifically formed on the surface of the top wall of the heating chamber 2 facing the interior of the heating chamber 2.
  • the inner surface of the recess 222 constitutes the above-mentioned reflection surface 221, and the shape of the inner surface of the recess 222 is configured to enable the reflected light to converge toward the surface of the wafer 9 located in the heating chamber 2, and to cover the entire surface of the wafer 9, thereby improving the heating uniformity.
  • the inner surface shape of the recess 222 for realizing the above-mentioned function can be of various shapes.
  • the above-mentioned reflecting surface 221 includes a plane 221a and an annular surface 221b surrounding the plane 221a, wherein the plane 221a is parallel to the horizontal plane, and the height of the annular surface 221b decreases from the edge of the plane 221a toward the edge of the top wall of the heating chamber 2, that is, the size of the opening surrounded by the annular surface 221b increases from top to bottom.
  • the annular surface 221b can reflect the light irradiated thereon and gather it toward the entire surface of the wafer 9.
  • the outer diameter of the annular surface 221b is greater than or equal to the diameter of the wafer 9.
  • the annular surface 221b may be an annular conical surface.
  • the light irradiated thereon may be reflected and gathered toward the entire surface of the wafer 9 by setting the inclination angle of the annular conical surface relative to the horizontal plane, and the light may cover the entire surface of the wafer 9.
  • the annular surface 221b may be an annular arc surface.
  • the light irradiated thereon may be reflected and gathered toward the entire surface of the wafer 9 by setting the inclination angle of the annular arc surface relative to the horizontal plane and the curvature of the annular arc surface, and the light may cover the entire surface of the wafer 9.
  • the annular arc surface may be a part of a spherical surface.
  • the heat radiation device 11 includes an annular lamp tube, which is arranged on the inner side of the annular surface 221b and is located outside the edge of the plane 221a. That is, the inner diameter of the annular lamp tube is larger than the edge diameter of the plane 221a, and smaller than the outer diameter of the annular surface 221b. Since the annular lamp tube is arranged on the wafer 9 in a surrounding manner, it can not only increase the heat irradiated to the surface of the wafer 9, improve the heating efficiency, but also improve the heating uniformity.
  • the annular lamp tube arranged on the inner side of the annular surface 221b and located outside the edge of the plane 221a, the light emitted by the annular lamp tube can be irradiated more on the annular surface 221b, so that the annular surface 221b can be used to reflect the light irradiated thereon and gather toward the entire surface of the wafer 9, and the light covers the entire surface of the wafer 9.
  • Those skilled in the art can reasonably set the diameter of the annular lamp tube and the distance between the annular lamp tube and the wafer 9 according to actual conditions, so that the light covers the entire surface of the wafer 9, thereby improving the temperature uniformity.
  • the annular light tube can be fixed to the top wall of the heating chamber 2 by a fixing member, such as a clamping member.
  • a lead wire channel can be provided in the top wall of the heating chamber 2, and the lead wire channel is used to lead the wiring of the annular light tube from the reflective surface 221 to the outside of the heating chamber 2, and electrically connect to an external power source, so as to realize the power supply of the annular light tube.
  • the annular light tube is one, but the embodiment of the present application is not limited to this. In actual In application, there may be multiple annular lamp tubes, and the multiple annular lamp tubes are concentrically arranged and distributed on different circumferences.
  • the heat radiation device 11 may also use heating lamps of other shapes, such as spiral lamp tubes, strip lamp tubes, light bulbs, etc.
  • the heating chamber 2 includes a chamber body 21 with an opening at the top, and a reflective plate 22 disposed on the top of the chamber body 21, the reflective plate 22 is sealed and connected to the chamber body 21, and is used to seal the opening; the reflective plate 22 has the above-mentioned reflective surface 221, and the reflective surface 221 is exposed from the opening to the heating chamber 2.
  • the above-mentioned heat radiation device 11 can be fixedly connected to the reflective plate 22.
  • a first annular protrusion 211 is provided at the opening of the top of the chamber body 21, and a second annular protrusion 223 is provided at the outer peripheral edge of the reflector 22, the second annular protrusion 223 is superimposed on the first annular protrusion 211, and the first annular protrusion 211 and the second annular protrusion 223 are fixedly connected, for example, by screws; a sealing member 12 is also provided between the first annular protrusion 211 and the second annular protrusion 223 for sealing the opening.
  • first annular protrusion 211 can provide support for the reflector 22 and can install the sealing member 12.
  • a positioning structure can be provided between the first annular protrusion 211 and the second annular protrusion 223 to achieve the positioning of the two, thereby facilitating the installation of the reflector 22.
  • the positioning structure is, for example, at least one positioning pin 13.
  • the process chamber further comprises a first lifting device 5 disposed in the heating chamber 2 (e.g., a shielding disk warehouse), and the first lifting device 5 may be, for example, a pin mechanism, and the first lifting device 5 is used to carry the shielding disk 10 in the heating chamber 2; at least one of the first lifting device 5 and the transmission device 4 can drive the shielding disk 10 placed thereon to rise and fall, so as to realize the transfer of the shielding disk 10 between the first lifting device 5 and the transmission device 4.
  • a first lifting device 5 disposed in the heating chamber 2 (e.g., a shielding disk warehouse)
  • the first lifting device 5 may be, for example, a pin mechanism, and the first lifting device 5 is used to carry the shielding disk 10 in the heating chamber 2; at least one of the first lifting device 5 and the transmission device 4 can drive the shielding disk 10 placed thereon to rise and fall, so as to realize the transfer of the shielding disk 10 between the first lifting device 5 and the transmission device 4.
  • the first lifting device 5 is used to drive the shielding disk 10 placed thereon to descend to a position lower than the wafer carried by the transmission device 4 in the heating chamber 2 (i.e., lower than the position of the transmission device 4).
  • the position of the wafer when the wafer is moved into the heating chamber 2 for the heat treatment process) is adjusted so that the wafer is located above the shielding plate 10 and below the heat radiation device 11 when it is moved into the heating chamber 2, so as to prevent the shielding plate 10 from hindering the wafer from moving into the heating chamber 2.
  • the heat radiation device 11 can be used to radiate heat from the top of the heating chamber 2 to the wafer to achieve heat treatment of the wafer.
  • the process chamber on the basis that the heating chamber 2 is used for both performing a heat treatment process and storing a shielding plate 10, the process chamber also includes a second lifting device 6 arranged in the reaction chamber 1.
  • the second lifting device 6 can be, for example, a pin mechanism, and the second lifting device 6 is used to carry the wafer 9 in the reaction chamber 1; at least one of the second lifting device 6 and the base 3 can drive the wafer 9 placed thereon to rise and fall, so as to realize the transfer of the wafer 9 between the second lifting device 6 and the base 3.
  • At least one of the first lifting device 5 and the second lifting device 6 may include at least three ejector pins spaced apart in the circumferential direction, such as the first lifting device 5 shown in FIG. 2 , which has at least three first ejector pins 51, and FIG. 2 only schematically shows two first ejector pins 51.
  • the top ends of the at least three first ejector pins 51 together constitute a bearing surface for bearing the shielding plate 10 or the wafer 9, and the center of the circumference where the at least three first ejector pins 51 are located is, for example, aligned with the center position of the wafer carried by the transmission device 4 in the heating chamber 2.
  • the first lifting device 5 and/or the second lifting device 6 can be raised and lowered.
  • the first lifting device 5 also includes a lifting mechanism connected to the at least three first ejector pins 51, such as the lifting mechanism 52 of the first lifting device 5 shown in FIG. 2 , and driven by the lifting mechanism 52, the at least three first ejector pins 51 can rise or fall synchronously.
  • at least three second ejector pins 61 (only two are schematically shown in FIG. 2 ) can, for example, penetrate the base 3 to be lifted and lowered, and the at least three second ejector pins 61 are arranged at intervals along the circumference of the base 3 .
  • the shielding plate 10 is located in the heating chamber 2 and is carried by the first lifting device 5 (i.e., at least three first ejector pins 51) and is located at the first carrying position (i.e., the position of the shielding plate 10 in Figures 1 and 2); at this time, the base 3 is in the film-transmitting position (i.e., the position of the base 3 in Figures 1 and 2), and at this film-transmitting position, the carrying pins of the second lifting device 6 are The surface (i.e., composed of the tops of at least three second ejector pins 61) is higher than the base 3; the wafer 9 is transferred to the reaction chamber 1 by a robot or other wafer conveying device, and is placed on the bearing surface of the above-mentioned second lifting device
  • the base 3 will hold up the wafer 9 so that the wafer 9 is separated from the second lifting device 6 and rises with the base 3.
  • the semiconductor process can be carried out.
  • the base 3 descends to the wafer conveying position.
  • the second lifting device 6 will support the wafer 9 so that the wafer 9 is separated from the base 3, and the base 3 is lowered to the wafer conveying position alone.
  • the above-mentioned transmission device 4 can move its carrying surface to below the wafer 9 and be located above the base 3.
  • the second lifting device 6 is lowered until the wafer 9 falls onto the carrying surface of the transmission device 4, thereby realizing the transfer of the wafer 9 from the second lifting device 6 to the transmission device 4.
  • the transfer device 4 transfers the wafer 9 to the second carrying position in the heating chamber 2 (i.e., the position of the wafer 9 in FIG. 2 ).
  • the second carrying position is higher than the first carrying position where the shielding plate 10 is located.
  • the wafer 9 is located above the shielding plate 10 and below the heat radiation device 11.
  • the heat radiation device 11 can be used to radiate heat to the wafer 9 to perform a heat treatment process.
  • the wafer 9 is transferred to the reaction chamber 1 by the transfer device 4, and the second lifting device 6 is raised.
  • the second lifting device 6 will lift the wafer 9 so that the wafer 9 is separated from the transfer device 4, that is, the wafer 9 is transferred from the transfer device 4 to the second lifting device 6. At this time, the wafer 9 that has completed the heat treatment process can proceed to the next semiconductor process.
  • the first lifting device 5 carrying the shielding disk 10 can be raised, and then the above-mentioned transmission device 4 can move its bearing surface to below the shielding disk 10 in the shielding disk library 2, and then the first lifting device 5 is lowered until the shielding disk 10 falls onto the bearing surface of the transmission device 4, that is, the shielding disk 10 is transferred from the first lifting device 5 to the transmission device 4. Then, the transmission device 4 is used to transfer the shielding disk 10 to the reaction chamber 1, and the shielding disk 10 is located above the susceptor 3 (at this time, it is located at the film transfer position) to shield the susceptor 3 and prevent the susceptor 3 from being contaminated.
  • the first lifting device 5 may not be provided, and other methods may be used to enable the transmission device 4 to rotate into the reaction chamber 1 without carrying the shielding plate 10.
  • the shielding plate 10 is taken out by opening the chamber.
  • the transmission device 4 includes a transmission arm and a second driving source 43, wherein the transmission arm is used to carry the shielding disk 10 or the wafer 9, and the second driving source 43 is used to drive the transmission arm to move between the reaction chamber 1 and the heating chamber 2.
  • the transmission arm includes a vertically arranged rotating shaft 42, and a connecting arm 41 and a bearing portion 44 perpendicular to the rotating shaft 42, and the bearing portion 44 has a bearing surface for carrying the wafer or the shielding disk.
  • the lower end of the rotating shaft 42 is connected to the second driving source 43, and the second driving source 43 is used to drive the rotating shaft 42 to rotate along its own axis.
  • the second driving source 43 can be a motor, a cylinder or a hydraulic cylinder that can provide rotational power.
  • the second driving source 43 is arranged outside the reaction chamber 1.
  • the lower end of the rotating shaft 42 extends from the bottom of the reaction chamber 1 to the outside of the chamber and is connected to the second driving source 43.
  • the upper end of the rotating shaft 42 is connected to one end of the connecting arm 41, and the other end of the connecting arm 41 is connected to the bearing part 44.
  • the rotating shaft 42 drives the connecting arm 41 and the bearing part 44 to rotate synchronously around the rotating shaft 42, so that the bearing part 44 rotates into the reaction chamber 1 or the heating chamber 2.
  • a lifting driving source can be added on the basis of the above-mentioned transmission arm and the second driving source 43 to drive the transmission arm to lift and lower.
  • the lifting driving source can be connected to the second driving source 43 to drive the second driving source 43 and the transmission arm to lift and lower as a whole, or it can also be connected to the transmission arm to drive only the transmission arm to lift and lower.
  • the second driving source 43 is connected to the lifting driving source to drive the lifting driving source and the transmission arm to rotate as a whole.
  • the carrying portion 44 is used to carry the shielding plate 10 or the wafer.
  • the contour shape of the orthographic projection of the carrying portion 44 on the horizontal plane is set to: when the carrying portion 44 moves into the heating chamber 2, it will not collide with the first lifting device 5; when the carrying portion 44 moves into the reaction chamber 1, it will not collide with the second lifting device 6.
  • the second lifting device 6 includes a plurality of second ejector pins 61 spaced apart in the circumferential direction, as shown in FIG3 , when the support portion 44 carries the shielding plate 10 or the wafer and moves it into the reaction chamber 1, at least a portion of the support portion 44 can move from the intervals 611 between adjacent second ejector pins 61 of the second lifting device 6 into the space surrounded by the plurality of second ejector pins 61, so that the shielding plate 10 or the wafer is located above the susceptor 3.
  • the first lifting device 5 includes a plurality of first ejector pins 51 spaced apart in the circumferential direction
  • the support portion 44 carries the shielding plate 10 or the wafer and moves it into the heating chamber 2
  • at least a portion of the support portion 44 can move from the intervals between adjacent first ejector pins 51 of the first lifting device 5 into the space surrounded by the plurality of first ejector pins 51, so that the shielding plate 10 or the wafer is located below the heat radiation device 11.
  • the carrier 44 carries the wafer and moves it into the heating chamber 2
  • at least a portion of the carrier 44 can move from the interval between adjacent first ejector pins 51 into the space surrounded by the plurality of first ejector pins 51.
  • the wafer 9 is located above the shielding plate 10 and below the heat radiation device 11.
  • a contour shape of the carrier 44 that can achieve the above function is shown in FIG3.
  • the structure of the carrier 44 shown in FIG3 is only used as an example.
  • the transfer arm can also adopt any other contour shape as long as it does not collide with the first lifting device 5 and the second lifting device 6.
  • an embodiment of the present application further provides a semiconductor process equipment, which includes the above-mentioned process chamber provided in the embodiment of the present application.
  • the semiconductor process equipment provided in the embodiment of the present application can improve the heating efficiency and heating uniformity of the wafer by adopting the above-mentioned process chamber provided in the embodiment of the present application.
  • the semiconductor process equipment provided by the embodiments of the present application includes a physical vapor deposition device.
  • the reaction chamber 1 can be used to perform a thin film deposition process (such as a metal film) on a wafer;
  • the heating chamber 2 can be used to perform a heat treatment process on the thin film deposited on the wafer, such as a reflow process on the metal film.
  • the embodiment of the present application further provides a thin film deposition method, comprising:
  • the shielding plate 10 in the heating chamber 2 is lowered to the first carrying position in the heating chamber 2 (i.e., the position of the shielding plate 10 in FIG. 1 and FIG. 2 ), and the heating chamber 2 is connected with the reaction chamber 1;
  • the thin film deposition method provided in the embodiment of the present application has a heating chamber 2 which is used for both heat treatment process and for storing the shielding plate 10, thereby simplifying the equipment structure, reducing the space occupied by the equipment, and reducing the equipment cost.
  • the wafer before performing a heat treatment process such as a metal reflow process, the wafer can be transferred from the reaction chamber 1 to the heating chamber 2, and when performing the heat treatment process, heat is radiated from the top of the heating chamber 2 to the wafer 9, thereby heating the wafer and completing the heat treatment process.
  • This scheme is to heat the wafer in the heating chamber 2.
  • the volume of the heating chamber 2 can be set to be smaller than that of the reaction chamber 1, this can make the heat distribution more concentrated and the heat loss smaller, thereby increasing the wafer heating rate; at the same time, by radiating heat from the top of the heating chamber 2 to the wafer 9, the upper surface of the wafer 9 can be directly heated, thereby further increasing the wafer heating rate.
  • the shielding plate 10 is first located in the heating chamber 2 and carried by the transmission device 4. At this time, the susceptor 3 is in the film transfer position.
  • the bearing surface of the above-mentioned second lifting device 6 (that is, the bearing surface formed by the top ends of at least three second ejector pins 61) is higher than the susceptor 3; then the wafer 9 is transferred to the reaction chamber 1 by a robot or other film transfer device, and placed on the bearing surface of the above-mentioned second lifting device 6, and then the susceptor 3 is raised to the process position.
  • the susceptor 3 will lift the wafer 9 so that the wafer 9 is separated from the second lifting device 6 and rises with the susceptor 3 until the susceptor 3 reaches the process position.
  • the reaction chamber 1 can perform the semiconductor process.
  • the susceptor 3 is lowered from the process position to the wafer transfer position.
  • the second lifting device 6 will support the wafer 9 so that the wafer 9 is separated from the base 3, and the base 3 is lowered to the wafer transfer position alone.
  • the above step S1 is performed, that is, the shielding plate 10 in the heating chamber 2 is lowered to the first bearing position in the heating chamber 2 (that is, the position of the shielding plate 10 in Figures 1 and 2).
  • the specific process is, for example: the first lifting device 5 is raised, and during its ascent, the first lifting device 5 will lift the shielding plate 10 so that the shielding plate 10 is separated from the transmission device 4, that is, the shielding plate 10 is transferred from the transmission device 4 to the first lifting device 5, and then the transmission device 4 can move its bearing surface to below the wafer 9 (which is carried by the second lifting device 6 at this time), and the first lifting device 5 is lowered until the shielding plate 10 is lowered to the first bearing position in the heating chamber 2, and the second lifting device 6 is lowered until the wafer 9 falls on the bearing surface of the transmission device 4, that is, the wafer 9 is transferred from the second lifting device 6 to the transmission device 4.
  • step S2 is started to be executed, that is, the transmission device 4 transmits the wafer 9 to the second carrying position in the heating chamber 2, and the second carrying position is higher than the first carrying position where the shielding plate 10 is located.
  • the wafer 9 is located above the shielding plate 10 and below the heat radiation device 11.
  • the heating chamber 2 can execute the above-mentioned step S3, that is, perform the heat treatment process.
  • the transmission device 4 transfers the wafer 9 to the reaction chamber 1 and raises the second lifting device 6.
  • the second lifting device 6 will lift the wafer 9 to separate the wafer 9 from the transmission device 4, that is, the wafer 9 is transferred from the transmission device 4 to the second lifting device 6.
  • the wafer 9 that has completed the heat treatment process can proceed to the next semiconductor process.
  • a transfer device before performing a heat treatment process such as a metal reflow process, can be used to carry the wafer, and the wafer can be transferred from the reaction chamber to the heating chamber.
  • a heat radiation device arranged at the top of the heating chamber can be used to radiate heat toward the wafer inside the heating chamber, thereby heating the wafer and completing the heat treatment process. This solution is to heat the wafer in a heating chamber.
  • the volume of the heating chamber can be set to be smaller than that of the reaction chamber, this can make the heat distribution more concentrated and the heat loss smaller, thereby increasing the wafer heating rate; at the same time, by arranging the above-mentioned heat radiation device at the top of the heating chamber, the upper surface of the wafer can be directly heated. Heating can further increase the wafer heating rate.

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Abstract

本申请提供一种工艺腔室、半导体工艺设备和薄膜沉积方法，包括：反应腔室，在反应腔室中设置有用于承载晶圆的基座；加热腔室，与反应腔室连通；加热腔室的顶部设置有热辐射装置，用于朝向加热腔室内部辐射热量；传输装置，设置于反应腔室中，用于承载晶圆，且能够将晶圆在反应腔室与加热腔室之间传输。本申请提供的工艺腔室、半导体工艺设备和薄膜沉积方法，可以提高对晶圆的加热效率和加热均匀性。

Description

工艺腔室、半导体工艺设备和薄膜沉积方法 技术领域
本申请涉及半导体制造领域，具体地，涉及一种工艺腔室、半导体工艺设备和薄膜沉积方法。
背景技术
磁控溅射是物理气相沉积(Physical Vapor Deposition，PVD)技术的一种，是半导体工业中使用最广泛的一类薄膜制造技术。随着集成电路的发展，为降低芯片损耗和RC延时，提高芯片速度，具有较低电阻率的铜逐步取代其他材料被广泛应用到半导体制造后段互连工艺。
在现有的铜互连工艺中，由于铜很难被刻蚀，因此铜互连工艺中大量使用大马士革双嵌套结构，铜的大马士革结构首先通过刻蚀在金属间介质层中形成通孔和互连线沟槽，然后通过PVD淀积阻挡层(例如TiN)和铜籽晶层，再通过化学电镀大量沉积铜。在淀积铜籽晶层时，由于芯片特征尺寸越来越小，沟槽的深宽比较高，在沉积铜时，金属原子并不会全部都沿垂直于沟槽底部的方向一层层沉积，这就导致因沟槽开口处铜薄膜的生长速度较快而出现沟槽顶部沉积物悬垂甚至堵住开口，使沟槽底部形成空洞而影响芯片电学性能。对此，为了保证铜材料能够顺利填充在通孔结构中，通常需要在完成阻挡层(例如TiN)和铜籽晶层的沉积工艺之后，进行铜薄膜的回流工艺。由于粒度对金属的溶化热力学性质有较大的影响，随着金属粒径的减小，其溶化温度也随之减小，且纳米尺度下的铜表面能和表面张力均有所增加，基于此，在进行铜的回流工艺时，通过将铜加热到300℃或以上，可以使溶化的铜薄膜原子在铜表面张力及沟槽毛细作用下，逐渐迁移到沟槽底部以实现更好的填充。
现有的PVD设备通常是在腔室内部增加热辐射源，用于在进行回流工艺时对晶圆进行加热，但是，目前的热辐射源的一种设置方式是在腔室周边的位置处，距离晶圆较远，导致对晶圆的加热效率较低，加热均匀性较差。还有一种设置方式是设置在用于传输遮蔽盘的传输装置上，但是这种方式很难将辐射出的热量集中于晶圆表面，大部分热量照射到了晶圆之外的区域，导致热量损耗较多，晶圆的加热效率较低，加热均匀性较差。
发明内容
本申请旨在至少解决现有技术中存在的技术问题之一，提出了一种工艺腔室、半导体工艺设备和薄膜沉积方法，其可以提高对晶圆的加热效率和加热均匀性。
为实现本申请的目的而提供一种工艺腔室，包括：
反应腔室，在所述反应腔室中设置有用于承载晶圆的基座；
加热腔室，与所述反应腔室连通；所述加热腔室的顶部设置有热辐射装置，用于朝向所述加热腔室内部辐射热量；
传输装置，设置于所述反应腔室中，用于承载晶圆，且能够将所述晶圆在所述反应腔室与所述加热腔室之间传输。
在一些实施例中，所述加热腔室内还存放有遮蔽盘；所述传输装置还用于承载所述遮蔽盘，且能够将所述遮蔽盘在所述反应腔室与所述加热腔室之间传输。
在一些实施例中，所述传输装置用于在所述反应腔室对所述晶圆进行半导体工艺之前，将所述加热腔室内存放的所述遮蔽盘传输到所述基座上方，并且在所述反应腔室要开始对所述晶圆进行半导体工艺时，将所述遮蔽盘传输到所述加热腔室；或者
所述传输装置用于在所述反应腔室内的所述晶圆完成半导体工艺之后， 将所述晶圆传输到所述热辐射装置下方，以使所述热辐射装置能够对所述晶圆进行加热，并且在所述加热结束之后，将所述晶圆传输到所述基座上。
在一些实施例中，所述加热腔室的顶壁设置有反射面，所述反射面用于将所述热辐射装置辐射出的热量向位于所述加热腔室内的晶圆表面反射。
在一些实施例中，所述加热腔室的顶壁设置有冷却流道，所述冷却流道用于传输冷却流体。
在一些实施例中，所述加热腔室的顶壁形成有凹部，所述凹部的内表面构成所述反射面，且所述凹部的内表面形状被设置为能够使反射的光线朝向位于所述加热腔室内的晶圆表面聚拢，并使光线覆盖整个晶圆表面。
在一些实施例中，所述反射面包括平面和环绕于所述平面周围的环形面，其中，所述平面平行于水平面，所述环形面的高度自所述平面的边缘朝靠近所述加热腔室的顶壁四周边缘的方向递减。
在一些实施例中，所述热辐射装置包括环形灯管，所述环形灯管环绕设置于所述环形面内侧，且位于所述平面的边缘外侧。
在一些实施例中，所述加热腔室包括顶部具有开口的腔室主体，和设置于所述腔室主体顶部的反射板，所述反射板与所述腔室主体密封连接，用于密封所述开口；所述反射板具有所述反射面，且所述反射面自所述开口暴露于所述加热腔室中。
在一些实施例中，所述腔室主体顶部的所述开口处设置有第一环形凸部，所述反射板的外周边缘处设置有第二环形凸部，所述第二环形凸部叠置于所述第一环形凸部上，且所述第一环形凸部与所述第二环形凸部固定连接；
所述第一环形凸部与所述第二环形凸部之间还设置有密封件，用于密封所述开口。
在一些实施例中，还包括：设置于所述加热腔室内的第一升降装置，所述第一升降装置用于在所述加热腔室中承载所述遮蔽盘；
所述第一升降装置和所述传输装置中的至少一者能够带动置于其上的所述遮蔽盘升降，以实现所述遮蔽盘在所述第一升降装置和所述传输装置之间的传递。
在一些实施例中，在所述传输装置要向所述加热腔室传输所述晶圆时，所述第一升降装置用于带动置于其上的所述遮蔽盘下降至低于所述传输装置所承载的所述晶圆在所述加热腔室中的位置。
在一些实施例中，还包括：设置于所述反应腔室内的第二升降装置，所述第二升降装置用于在所述反应腔室中承载所述晶圆；
所述第二升降装置和所述基座中的至少一者能够带动置于其上的所述晶圆升降，以实现所述晶圆在所述第二升降装置和所述基座之间的传递。
在一些实施例中，所述传输装置包括传输手臂和第二驱动源，其中，所述传输手臂用于承载所述遮蔽盘或所述晶圆，所述第二驱动源用于驱动所述传输手臂在所述反应腔室与所述加热腔室之间运动；
所述传输手臂包括竖直设置的旋转轴，以及垂直于所述旋转轴的连接臂和承载部，其中，所述旋转轴的下端与所述第二驱动源连接，所述旋转轴的上端与所述连接臂的一端连接，所述连接臂的另一端与所述承载部连接；
所述第二升降装置包括沿所述基座的周向间隔设置的多个顶针，在所述承载部承载所述遮蔽盘或晶圆移动至所述反应腔室内时，所述承载部的至少一部分能够从所述第二升降装置的相邻顶针之间的间隔移入多个顶针所围的空间中，以使所述遮蔽盘或晶圆位于所述基座上方；或者
所述第一升降装置包括沿所述基座的周向间隔设置的多个顶针，在所述承载部承载所述遮蔽盘或晶圆移动至所述加热腔室内时，所述承载部的至少一部分能够从所述第一升降装置的相邻顶针之间的间隔移入多个顶针所围的空间中，以使所述遮蔽盘或晶圆位于所述热辐射装置下方。
作为另一个技术方案，本申请还提供一种半导体工艺设备，其包括本申 请提供的上述工艺腔室。
在一些实施例中，所述半导体工艺设备包括物理气相沉积设备。
作为另一个技术方案，本申请还提供一种薄膜沉积方法，包括：
在反应腔室内的晶圆完成半导体工艺后，将加热腔室内的遮蔽盘下降至所述加热腔室中的第一承载位置，所述加热腔室与所述反应腔室连通；
将所述晶圆传输至所述加热腔室中的第二承载位置，所述第二承载位置高于所述第一承载位置；
从所述加热腔室的顶部向所述晶圆辐射热量，以对所述晶圆进行热处理。
本申请具有以下有益效果：
本申请提供的工艺腔室、半导体工艺设备和薄膜沉积方法的技术方案中，可在进行诸如金属回流工艺等的热处理工艺之前，利用传输装置承载晶圆，将该晶圆从反应腔室传输至加热腔室中，并在进行热处理工艺时利用在加热腔室的顶部设置的热辐射装置，朝向加热腔室内部的晶圆辐射热量，从而实现对晶圆的加热，完成热处理工艺。本方案是在加热腔室中加热晶圆，由于加热腔室的体积可被设置为相对于反应腔室更小，这可以使热量分布更集中，热量损耗更小，从而可以提高晶圆升温速率；同时，通过将上述热辐射装置设置于加热腔室的顶部，可以直接对晶圆上表面进行加热，从而可以进一步提高晶圆升温速率；此外，由于反应腔室和加热腔室相连通，可以在一个工艺腔室内完成半导体工艺(诸如沉积、刻蚀等)和热处理工艺，提高了半导体制造效率。
附图说明
图1为本申请实施例提供的物理气相沉积设备的剖面图；
图2为本申请实施例采用的加热腔室的局部放大图；
图3为本申请实施例采用的传输装置的传输手臂的结构图；
图4为本申请实施例采用的传输装置的传输手臂在承载晶圆时的结构图；
图5为本申请实施例提供的薄膜沉积方法的流程图。
具体实施方式
为使本领域的技术人员更好地理解本申请的技术方案，下面结合附图来对本申请提供的工艺腔室、半导体工艺设备和薄膜沉积方法进行详细描述。
相关技术中，工艺腔室包括腔室主体、与该腔室主体的内部连通的遮蔽盘库、遮蔽盘及传输机构，其中，在腔体主体中设置有基座和顶针机构；基座用于在进行薄膜沉积工艺时承载被加工工件；顶针机构通过升降来实现与基座之间传递晶圆，传输机构用于在使用新靶材或预热腔室时，将遮蔽盘库中的遮蔽盘传输至基座或晶圆上方，以避免基座或晶圆被污染。在该相关技术中，传输机构的传输手臂上设置有加热元件，以进行铜回流工艺为例，当晶圆的铜籽晶层沉积工艺完成后，顶针机构将晶圆提升至回流工艺位，传输手臂旋转至晶圆下方以加热晶圆背面实现铜回流。在回流工艺完成之后，传输手臂在驱动装置驱动下旋转至遮蔽盘库中。
但是，上述回流工艺的实现方式是利用传输手臂上的加热元件对晶圆的背面进行加热，一方面，受限于用来支撑晶圆的顶针机构的位置，传输手臂的托盘面积有限，加热元件的面积并不能覆盖整个晶圆背面，并且此加热方式很难将辐射出的热量集中于晶圆表面，导致热量损耗较多，晶圆的加热效率较低。
为了解决上述技术问题，请一并参阅图1和图2，本申请实施例提供的工艺腔室包括反应腔室1、加热腔室2和传输装置4，其中，在反应腔室1中设置有用于承载晶圆9的基座3，该基座3例如为静电卡盘，在一些实施 例中，该基座3还与射频电源电连接，用于在晶圆9表面形成射频偏压。在反应腔室1中，且位于基座3上方设置有靶材7，该靶材7与激励电源电连接，用于激发反应腔室1中的工艺气体(例如氩气)形成等离子体，并轰击靶材7，从靶材7逸出的靶材材料在上述射频偏压的作用下朝晶圆9表面移动，并沉积在晶圆9表面形成薄膜。另外，在一些实施例中，在靶材7上方设置有磁控管8。上述反应腔室1可以应用于铜(Cu)、钌(Ru)、钴(Co)、钼(Mo)、钨(W)、铑(Rh)、钛(Ti)、钽(Ta)、铝(Al)等薄膜的沉积。
加热腔室2与反应腔室1连通。在此基础上，加热腔室2的顶部设置有热辐射装置11，用于朝向加热腔室2内部辐射热量。上述传输装置4用于承载晶圆9，且能够将晶圆9在反应腔室1与加热腔室2之间传输。这样，在进行诸如金属回流工艺等的热处理工艺之前，可以利用传输装置4承载晶圆9，将该晶圆9从反应腔室1传输至加热腔室2中，并在进行热处理工艺时利用在加热腔室2的顶部设置的热辐射装置11，朝向加热腔室2内部的晶圆9辐射热量，从而实现对晶圆9的加热，完成热处理工艺。本方案是在加热腔室2中加热晶圆9，由于加热腔室2的体积可被设置为相对于反应腔室1更小，这可以使热量分布更集中，热量损失更小，从而可以提高晶圆9的升温速率；同时，通过将上述热辐射装置11设置于加热腔室2的顶部，可以直接对晶圆9上表面进行加热，且能够设置热辐射装置11的面积，使其大于或等于晶圆9的面积，从而能够对整个晶圆9的表面进行均匀加热。本申请实施例中的加热腔室可以适用于回流等热处理工艺，由于反应腔室和加热腔室相连通，可以在一个工艺腔室内完成诸半导体工艺(如沉积、刻蚀等)和热处理工艺，提高了半导体制造效率。
在一些实施例中，为了简化设备结构，减小设备占用空间，降低设备成本，加热腔室2内还存放有遮蔽盘10，即，加热腔室2既用于进行热处理工艺，又用于存放遮蔽盘10。
通常，工艺腔室会配备有遮蔽盘10和用于存放遮蔽盘10的遮蔽盘库，在使用新靶材进行工艺，或者在开腔维护后重新进行工艺时，为避免靶材表面可能被污染的金属沉积到晶圆表面，通常需要在进行正常半导体工艺前先预热腔室和轰击掉靶材表面污染物，此时会使用遮蔽盘10遮挡在基座3的上方，而在进行正常半导体工艺时，需要将遮蔽盘10移动至与反应腔室1连通的遮蔽盘库中。在这种情况下，在一些实施例中，该遮蔽盘库用作上述加热腔室2，也就是说，针对已配备有遮蔽盘库的工艺腔室的情况，可以对原有的遮蔽盘库进行改进，通过增设热辐射装置11，可以使遮蔽盘库既用于进行热处理工艺，又用于存放遮蔽盘10，从而无需占用反应腔室1的内部空间，也无需大幅度改进反应腔室1的结构，进而可以降低设计难度，节省设备成本。此外，上述遮蔽盘库的体积相对于反应腔室1更小，这可以使热量分布更集中，热量损耗更小，从而可以提高晶圆9的升温速率。
在加热腔室2既用于进行热处理工艺，又用于存放遮蔽盘10的基础上，上述传输装置4还用于承载遮蔽盘10，且能够将遮蔽盘10在反应腔室1与加热腔室2之间传输。在一些实施例中，在反应腔室1对晶圆进行半导体工艺(例如金属薄膜沉积工艺)之前，通常需要进行诸如预热腔室和轰击掉靶材表面污染物等的预处理工艺，在这种情况下，传输装置4用于将加热腔室2内存放的遮蔽盘10传输到基座3上方，以能够在进行预处理工艺时，利用遮蔽盘10遮挡基座3，以避免基座3被污染。并且，在反应腔室1要开始对晶圆进行半导体工艺时，将遮蔽盘10传输到加热腔室2中存放，以保证工艺的正常进行。即，在进行半导体工艺之前，先将遮蔽盘10传输到加热腔室2中存放。另外，传输装置4还可以用于在反应腔室1内的晶圆完成半导体工艺之后，将晶圆传输到加热腔室2内热辐射装置11下方，以使热辐射装置11能够对晶圆进行加热，从而完成对晶圆的热处理，并且在加热结束之后，将晶圆传输到基座3上。
在一些实施例中，为了进一步提高热量利用率，提高加热效率，加热腔室2的顶壁设置有反射面221，该反射面221用于将热辐射装置11辐射出的热量向位于加热腔室2内的晶圆9表面反射。具体地，反射面221设置于加热腔室2的顶壁的朝向加热腔室2内部的表面，进一步的，在一些实施例中，该反射面221为镜面，该镜面例如为光洁度小于或等于Ra0.1的弧面。
在一些实施例中，加热腔室2的顶壁设置有冷却流道，该冷却流道用于传输冷却流体，例如冷却水，以在进行热处理工艺时，对加热腔室2的顶壁进行冷却，从而可以避免因加热腔室2的顶壁的外表面温度过高而造成人员烫伤。例如，如图2所示，加热腔室2的顶壁外表面上形成有凹道14和密封该凹道14的盖板15，凹道14与盖板15合围形成上述冷却流道。进一步的，在一些实施例中，盖板15的外表面与加热腔室2的顶壁外表面平齐，这样可以使盖板15的外表面与加热腔室2的顶壁外表面共同构成一平滑连续的表面。但是，本申请实施例并不局限于此，在实际应用中，凹道14也可以形成在反射面221，并且上述冷却流道在反射面221或加热腔室2的顶壁外表面上的分布方式可以根据具体需要而设定，例如上述冷却流道均匀地分布在反射面221或加热腔室2的顶壁外表面上。
在一些实施例中，在提高加热效率的基础上，加热腔室2的顶壁形成有凹部222，该凹部222具体形成于加热腔室2的顶壁的朝向加热腔室2内部的表面，该凹部222的内表面构成上述反射面221，且该凹部222的内表面形状被设置为能够使反射的光线朝向位于加热腔室2内的晶圆9表面聚拢，并使光线覆盖整个晶圆9表面，从而可以提高加热均匀性。
实现上述功能的凹部222的内表面形状可以有多种，例如，上述反射面221包括平面221a和环绕于该平面221a周围的环形面221b，其中，平面221a平行于水平面，环形面221b的高度自平面221a的边缘朝靠近加热腔室2的顶壁四周边缘的方向递减，即，环形面221b所围成的开口尺寸由上而下递增。 这样，环形面221b可以将照射至其上的光线反射并朝向整个晶圆9表面聚拢。在一些实施例中，上述环形面221b的外径大于或等于晶圆9直径。
上述环形面221b可以是环形锥面，在这种情况下，可以通过设置环形锥面相对于水平面的倾斜角度，来使照射至其上的光线反射并朝向整个晶圆9表面聚拢，且能够使光线覆盖整个晶圆9表面。或者，上述环形面221b也可以是环形弧面，在这种情况下，可以通过设置环形弧面相对于水平面的倾斜角度，以及环形弧面的弧度来使照射至其上的光线反射并朝向整个晶圆9表面聚拢，且能够使光线覆盖整个晶圆9表面。例如，环形弧面可以为球面的一部分。
在一些实施例中，在采用上述反射面221的基础上，热辐射装置11包括环形灯管，该环形灯管环绕设置于环形面221b内侧，且位于平面221a的边缘外侧。即，环形灯管的内周直径大于平面221a的边缘直径，且小于环形面221b的外周直径。由于环形灯管在晶圆9上方环绕设置，这样不仅可以增加照射至晶圆9表面的热量，提高加热效率，而且还可以提高加热均匀性。另外，通过使环形灯管环绕设置于环形面221b内侧，且位于平面221a的边缘外侧，可以使环形灯管发出的光线能够更多地照射至环形面221b上，以利用环形面221b来使照射至其上的光线反射并朝向整个晶圆9表面聚拢，且使光线覆盖整个晶圆9表面。本领域技术人员可以根据实际情况合理设置环形灯管的直径以及环形灯管与晶圆9之间的距离，以使得光线覆盖整个晶圆9表面，从而提高温度均匀性。
在一些实施例中，上述环形灯管可以利用固定件固定于加热腔室2的顶壁，该固定件例如为卡接件。而且，可以在加热腔室2的顶壁中设置引线通道，该引线通道用于将环形灯管的接线自反射面221引出至加热腔室2之外，并与外部的电源电连接，从而实现环形灯管的供电。需要说明的是，在本实施例中，上述环形灯管为一个，但是，本申请实施例并不局限于此，在实际 应用中，上述环形灯管也可以是多个，且多个环形灯管同心设置，并分布在不同的圆周。当然，热辐射装置11还可以采用其他形状的加热灯，例如螺旋形灯管、条形灯管、灯泡等等。
在一些实施例中，为了便于热辐射装置11的安装，加热腔室2包括顶部具有开口的腔室主体21，和设置于腔室主体21顶部的反射板22，该反射板22与腔室主体21密封连接，用于密封开口；反射板22具有上述反射面221，且反射面221自开口暴露于加热腔室2中。上述热辐射装置11可以与反射板22固定连接。进一步的，在一些实施例中，为了实现反射板22与加热腔室2的密封，保证加热腔室2内部和反应腔室1内部的密封性，腔室主体21顶部的开口处设置有第一环形凸部211，反射板22的外周边缘处设置有第二环形凸部223，第二环形凸部223叠置于第一环形凸部211上，且第一环形凸部211与第二环形凸部223固定连接，例如通过螺钉固定连接；第一环形凸部211与第二环形凸部223之间还设置有密封件12，用于密封开口。这样，第一环形凸部211可为反射板22提供支撑，且能够安装密封件12。另外，在一些实施例中，可以在第一环形凸部211与第二环形凸部223之间设置定位结构，以实现二者的定位，从而为反射板22的安装提供方便。该定位结构例如为至少一个定位销13。
在一些实施例中，在加热腔室2既用于进行热处理工艺，又用于存放遮蔽盘10的基础上，工艺腔室还包括设置于加热腔室2(例如为遮蔽盘库)的第一升降装置5，该第一升降装置5例如可以为顶针机构，该第一升降装置5用于在加热腔室2中承载遮蔽盘10；第一升降装置5和传输装置4中的至少一者能够带动置于其上的遮蔽盘10升降，以实现遮蔽盘10在第一升降装置5和传输装置4之间的传递。另外，在一些实施例中，在传输装置4要向加热腔室2传输晶圆时，第一升降装置5用于带动置于其上的遮蔽盘10下降至低于传输装置4所承载的晶圆在加热腔室2中的位置(即，低于传输装置4 将晶圆移入加热腔室2中进行热处理工艺时晶圆的位置)，以使晶圆在移入加热腔室2中时，位于遮蔽盘10的上方，热辐射装置11的下方，避免遮蔽盘10阻碍晶圆移入加热腔室2中，此时可以利用热辐射装置11从加热腔室2的顶部向晶圆辐射热量，实现对晶圆的热处理。
在一些实施例中，在加热腔室2既用于进行热处理工艺，又用于存放遮蔽盘10的基础上，工艺腔室还包括设置于反应腔室1内的第二升降装置6，该第二升降装置6例如可以为顶针机构，该第二升降装置6用于在反应腔室1中承载晶圆9；第二升降装置6和基座3中的至少一者能够带动置于其上的晶圆9升降，以实现晶圆9在第二升降装置6和基座3之间的传递。
上述第一升降装置5和第二升降装置6中的至少一者可以包括在圆周方向上间隔设置的至少三个顶针，例如图2中示出的第一升降装置5，其具有至少三个第一顶针51，图2仅示意性地示出了两个第一顶针51。至少三个第一顶针51的顶端共同构成用于承载遮蔽盘10或晶圆9的承载面，至少三个第一顶针51所在圆周的中心例如与传输装置4所承载的晶圆在加热腔室2中的中心位置对中。上述第一升降装置5和/或第二升降装置6能够升降，以第一升降装置5能够升降为例，第一升降装置5还包括与至少三个第一顶针51连接的升降机构，例如图2中示出的第一升降装置5的升降机构52，在升降机构52的驱动下，至少三个第一顶针51能够同步上升或下降。对于第二升降装置6，其至少三个第二顶针61(图2仅示意性地示出了两个)例如可以贯穿基座3升降，并且至少三个第二顶针61沿基座3的周向间隔设置。
以第一升降装置5能够升降、第二升降装置6能够升降，且基座3能够升降为例，在进行半导体工艺之前，使遮蔽盘10位于加热腔室2中，且由上述第一升降装置5(即，至少三个第一顶针51)承载，并位于第一承载位置(即，图1和图2中遮蔽盘10所在位置)；此时基座3处于传片位置(即，图1和图2中基座3所在位置)，在该传片位置，上述第二升降装置6的承载 面(即，由至少三个第二顶针61的顶端共同构成)高于基座3；通过机械手或者其他传片装置将晶圆9传输至反应腔室1中，并放置于上述第二升降装置6的承载面，然后将基座3上升至工艺位置(高于图1和图2中第二升降装置6的承载面所在位置)，在基座3上升过程中，基座3会托起晶圆9，以使晶圆9脱离第二升降装置6，并随基座3一起上升。在基座3位于工艺位置时，可以进行半导体工艺。半导体工艺结束后，基座3下降至传片位置，在基座3下降过程中，第二升降装置6会支撑晶圆9，以使晶圆9脱离基座3，使基座3单独下降至传片位置。在该传片位置，上述传输装置4能够使其承载面运动至晶圆9下方，且位于基座3上方，此时将第二升降装置6下降，直至晶圆9下落至传输装置4的承载面上，即实现将晶圆9从第二升降装置6传递至传输装置4。
在需要进行诸如回流等热处理工艺时，传输装置4将晶圆9传输至加热腔室2中的第二承载位置(即，图2中晶圆9所在位置)，该第二承载位置高于遮蔽盘10所在的第一承载位置，此时晶圆9位于遮蔽盘10的上方，热辐射装置11的下方，可以利用热辐射装置11向晶圆9辐射热量，以进行热处理工艺。热处理工艺结束后，利用传输装置4将晶圆9传输至反应腔室1中，将第二升降装置6上升，在其上升过程中，第二升降装置6会托起晶圆9，以使晶圆9脱离传输装置4，即实现将晶圆9从传输装置4传递至第二升降装置6，此时完成热处理工艺的晶圆9可以进行下一步半导体工艺。
在需要对新靶材轰击或者预热腔室时，可以将承载有遮蔽盘10的第一升降装置5上升，然后上述传输装置4能够使其承载面运动至遮蔽盘库2中的遮蔽盘10下方，再将第一升降装置5下降，直至遮蔽盘10下落至传输装置4的承载面上，即实现将遮蔽盘10从第一升降装置5传递至传输装置4。然后，利用传输装置4将遮蔽盘10传输至反应腔室1中，且位于基座3(此时位于传片位置)上方，以遮挡基座3，防止基座3被污染。
需要说明的是，在实际应用中，也可以不设置上述第一升降装置5，而采用其他方式使传输装置4能够不携带遮蔽盘10单独旋转至反应腔室1内。例如，开腔取出遮蔽盘10。
在一些实施例中，如图1、图3和图4所示，传输装置4包括传输手臂和第二驱动源43，其中，传输手臂用于承载遮蔽盘10或晶圆9，第二驱动源43用于驱动传输手臂在反应腔室1与加热腔室2之间运动。例如，该传输手臂例如包括竖直设置的旋转轴42，以及垂直于该旋转轴42的连接臂41和承载部44，承载部44具有用于承载晶圆或遮蔽盘的承载面。其中，旋转轴42的下端与第二驱动源43连接，第二驱动源43用于驱动旋转轴42沿自身轴线旋转，第二驱动源43可以为能够提供旋转动力的电机、气缸或者液压缸。在一些实施例中，第二驱动源43设置在反应腔室1外部，在这种情况下，旋转轴42的下端自反应腔室1的底部延伸至腔室外部，并与第二驱动源43连接。
旋转轴42的上端与连接臂41的一端连接，连接臂41的另一端与承载部44连接。在第二驱动源43的驱动下，旋转轴42带动连接臂41和承载部44围绕旋转轴42同步旋转，以使承载部44旋转至反应腔室1内或者加热腔室2内。需要说明的是，如果传输装置4还能够升降，则可以在上述传输手臂和第二驱动源43的基础上，增加升降驱动源，用于驱动传输手臂升降。在一些实施例中，该升降驱动源可以与第二驱动源43连接，以驱动第二驱动源43和传输手臂整体升降，或者，也可以与传输手臂连接，以仅驱动传输手臂升降，在这种情况下，第二驱动源43与升降驱动源连接，以驱动升降驱动源和传输手臂整体旋转。
上述承载部44用于承载遮蔽盘10或晶圆。在一些实施例中，上述承载部44在水平面上的正投影的轮廓形状被设置为：在承载部44移动至加热腔室2内时，不会碰撞第一升降装置5；在承载部44移动至反应腔室1内时，不会碰撞第二升降装置6。
在上述第二升降装置6包括在圆周方向上间隔设置的多个第二顶针61的情况下，如图3所示，在承载部44承载遮蔽盘10或晶圆移动至反应腔室1内时，该承载部44的至少一部分能够从第二升降装置6的相邻第二顶针61之间的间隔611移入多个第二顶针61所围的空间中，以使遮蔽盘10或晶圆位于基座3上方。在上述第一升降装置5包括在圆周方向上间隔设置的多个第一顶针51的情况下，在承载部44承载遮蔽盘10或晶圆移动至加热腔室2内时，该承载部44的至少一部分能够从第一升降装置5的相邻第一顶针51之间的间隔移入多个第一顶针51所围的空间中，以使遮蔽盘10或晶圆位于热辐射装置11的下方。具体地，在承载部44承载晶圆移动至加热腔室2内时，该承载部44的至少一部分能够从相邻第一顶针51之间的间隔移入多个第一顶针51所围的空间中，此时晶圆9位于遮蔽盘10的上方，热辐射装置11的下方。能够实现上述功能的承载部44的一种轮廓的形状如图3所示。当然，图3所示的承载部44的结构仅仅只是作为示例，在实际应用中，传输手臂也可以采用其他任意轮廓形状，只要不会碰撞第一升降装置5和第二升降装置6即可。
作为另一个技术方案，本申请实施例还提供一种半导体工艺设备，其包括本申请实施例提供的上述工艺腔室。
本申请实施例提供的半导体工艺设备，其通过采用本申请实施例提供的上述工艺腔室，可以提高对晶圆的加热效率和加热均匀性。
在一些实施例中，本申请实施例提供的半导体工艺设备包括物理气相沉积设备。该物理气相沉积设备的工艺腔室中，反应腔室1可用于对晶圆进行薄膜沉积工艺(例如金属薄膜)；加热腔室2可用于对晶圆上沉积的薄膜进行热处理工艺，例如对金属薄膜进行回流工艺。
作为另一个技术方案，结合图1、图2和图5所示，本申请实施例还提供一种薄膜沉积方法，包括：
S1、在反应腔室1内的晶圆9完成半导体工艺后，将加热腔室2内的遮蔽盘10下降至加热腔室2中的第一承载位置(即，图1和图2中遮蔽盘10所在位置)，加热腔室2与反应腔室1连通；
S2、将晶圆9传输至加热腔室2中的第二承载位置(即，图2中晶圆9所在位置)，该第二承载位置高于上述第一承载位置；
S3、从加热腔室2的顶部向晶圆9辐射热量，以对晶圆9进行热处理。
本申请实施例提供的薄膜沉积方法，其加热腔室2既用于进行热处理工艺，又用于存放遮蔽盘10，从而可以简化设备结构，减小设备占用空间，降低设备成本，同时可以在进行诸如金属回流工艺等的热处理工艺之前，将该晶圆从反应腔室1传输至加热腔室2中，并在进行热处理工艺时从加热腔室2的顶部向晶圆9辐射热量，从而实现对晶圆的加热，完成热处理工艺。本方案是在加热腔室2中加热晶圆，由于加热腔室2的体积可被设置为相对于反应腔室1更小，这可以使热量分布更集中，热量损耗更小，从而可以提高晶圆升温速率；同时，通过从加热腔室2的顶部向晶圆9辐射热量，可以直接对晶圆9上表面进行加热，从而可以进一步提高晶圆升温速率。
具体地，以图1所示的工艺腔室，且第一升降装置5能够升降、第二升降装置6能够升降，且基座3能够升降为例，在进行半导体工艺之前，先使遮蔽盘10位于加热腔室2中，且由传输装置4承载，此时基座3处于传片位置，在该传片位置，上述第二升降装置6的承载面(即，至少三个第二顶针61的顶端构成的承载面)高于基座3；然后通过机械手或者其他传片装置将晶圆9传输至反应腔室1中，并放置于上述第二升降装置6的承载面，再将基座3上升至工艺位置，在基座3上升过程中，基座3会托起晶圆9，以使晶圆9脱离第二升降装置6，并随基座3一起上升，直至基座3到达工艺位置，此时反应腔室1可以执行半导体工艺。
待半导体工艺结束后，基座3自工艺位置下降至传片位置，在基座3下 降过程中，第二升降装置6会支撑晶圆9，以使晶圆9脱离基座3，使基座3单独下降至传片位置。然后，执行上述步骤S1，即，将加热腔室2内的遮蔽盘10下降至加热腔室2中的第一承载位置(即，图1和图2中遮蔽盘10所在位置)，具体过程例如为：将第一升降装置5上升，在其上升过程中，第一升降装置5会托起遮蔽盘10，以使遮蔽盘10脱离传输装置4，即实现将遮蔽盘10从传输装置4传递至第一升降装置5，然后传输装置4能够使其承载面运动至晶圆9(此时由第二升降装置6承载)下方，并且第一升降装置5下降，直至遮蔽盘10下降至加热腔室2中的第一承载位置，将第二升降装置6下降，直至晶圆9下落至传输装置4的承载面上，即实现将晶圆9从第二升降装置6传递至传输装置4。然后，开始执行上述步骤S2，即，传输装置4将晶圆9传输至加热腔室2中的第二承载位置，该第二承载位置高于遮蔽盘10所在的第一承载位置，此时晶圆9位于遮蔽盘10的上方，热辐射装置11的下方，此时加热腔室2可以执行上述步骤S3，即进行热处理工艺。
待热处理工艺结束后，传输装置4将晶圆9传输至反应腔室1中，将第二升降装置6上升，在其上升过程中，第二升降装置6会托起晶圆9，以使晶圆9脱离传输装置4，即实现将晶圆9从传输装置4传递至第二升降装置6，此时完成热处理工艺的晶圆9可以进行下一步半导体工艺。
综上所述，本申请实施例提供的工艺腔室、半导体工艺设备和薄膜沉积方法的技术方案中，可在进行诸如金属回流工艺等的热处理工艺之前，利用传输装置承载晶圆，将该晶圆从反应腔室传输至加热腔室中，并在进行热处理工艺时利用在加热腔室的顶部设置的热辐射装置，朝向加热腔室内部的晶圆辐射热量，从而实现对晶圆的加热，完成热处理工艺。本方案是在加热腔室中加热晶圆，由于加热腔室的体积可被设置为相对于反应腔室更小，这可以使热量分布更集中，热量损耗更小，从而可以提高晶圆升温速率；同时，通过将上述热辐射装置设置于加热腔室的顶部，可以直接对晶圆上表面进行 加热，从而可以进一步提高晶圆升温速率。
可以理解的是，以上实施方式仅仅是为了说明本申请的原理而采用的示例性实施方式，然而本申请并不局限于此。对于本领域内的普通技术人员而言，在不脱离本申请的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本申请的保护范围。

Claims (17)

  1. 一种工艺腔室，其特征在于，包括：
    反应腔室，在所述反应腔室中设置有用于承载晶圆的基座；
    加热腔室，与所述反应腔室连通；所述加热腔室的顶部设置有热辐射装置，用于朝向所述加热腔室内部辐射热量；
    传输装置，设置于所述反应腔室中，用于承载晶圆，且能够将所述晶圆在所述反应腔室与所述加热腔室之间传输。
  2. 根据权利要求1所述的工艺腔室，其特征在于，所述加热腔室内还存放有遮蔽盘；所述传输装置还用于承载所述遮蔽盘，且能够将所述遮蔽盘在所述反应腔室与所述加热腔室之间传输。
  3. 根据权利要求2所述的工艺腔室，其特征在于，所述传输装置用于在所述反应腔室对所述晶圆进行半导体工艺之前，将所述加热腔室内存放的所述遮蔽盘传输到所述基座上方，并且在所述反应腔室要开始对所述晶圆进行半导体工艺时，将所述遮蔽盘传输到所述加热腔室；或者
    所述传输装置用于在所述反应腔室内的所述晶圆完成半导体工艺之后，将所述晶圆传输到所述热辐射装置下方，以使所述热辐射装置能够对所述晶圆进行加热，并且在所述加热结束之后，将所述晶圆传输到所述基座上。
  4. 根据权利要求1-3中任意一项所述的工艺腔室，其特征在于，所述加热腔室的顶壁设置有反射面，所述反射面用于将所述热辐射装置辐射出的热量向位于所述加热腔室内的晶圆表面反射。
  5. 根据权利要求4所述的工艺腔室，其特征在于，所述加热腔室的顶壁设置有冷却流道，所述冷却流道用于传输冷却流体。
  6. 根据权利要求4所述的工艺腔室，其特征在于，所述加热腔室的顶壁形成有凹部，所述凹部的内表面构成所述反射面，且所述凹部的内表面形状被设置为能够使反射的光线朝向位于所述加热腔室内的晶圆表面聚拢，并使光线覆盖整个晶圆表面。
  7. 根据权利要求6所述的工艺腔室，其特征在于，所述反射面包括平面和环绕于所述平面周围的环形面，其中，所述平面平行于水平面，所述环形面的高度自所述平面的边缘朝靠近所述加热腔室的顶壁四周边缘的方向递减。
  8. 根据权利要求7所述的工艺腔室，其特征在于，所述热辐射装置包括环形灯管，所述环形灯管环绕设置于所述环形面内侧，且位于所述平面的边缘外侧。
  9. 根据权利要求4所述的工艺腔室，其特征在于，所述加热腔室包括顶部具有开口的腔室主体，和设置于所述腔室主体顶部的反射板，所述反射板与所述腔室主体密封连接，用于密封所述开口；所述反射板具有所述反射面，且所述反射面自所述开口暴露于所述加热腔室中。
  10. 根据权利要求9所述的工艺腔室，其特征在于，所述腔室主体顶部的所述开口处设置有第一环形凸部，所述反射板的外周边缘处设置有第二环形凸部，所述第二环形凸部叠置于所述第一环形凸部上，且所述第一环形凸部与所述第二环形凸部固定连接；
    所述第一环形凸部与所述第二环形凸部之间还设置有密封件，用于密封所述开口。
  11. 根据权利要求2所述的工艺腔室，其特征在于，还包括：设置于所述加热腔室内的第一升降装置，所述第一升降装置用于在所述加热腔室中承载所述遮蔽盘；
    所述第一升降装置和所述传输装置中的至少一者能够带动置于其上的所述遮蔽盘升降，以实现所述遮蔽盘在所述第一升降装置和所述传输装置之间的传递。
  12. 根据权利要求11所述的工艺腔室，其特征在于，在所述传输装置要向所述加热腔室传输所述晶圆时，所述第一升降装置用于带动置于其上的所述遮蔽盘下降至低于所述传输装置所承载的所述晶圆在所述加热腔室中的位置。
  13. 根据权利要求11所述的工艺腔室，其特征在于，还包括：设置于所述反应腔室内的第二升降装置，所述第二升降装置用于在所述反应腔室中承载所述晶圆；
    所述第二升降装置和所述基座中的至少一者能够带动置于其上的所述晶圆升降，以实现所述晶圆在所述第二升降装置和所述基座之间的传递。
  14. 根据权利要求13所述的工艺腔室，其特征在于，所述传输装置包括传输手臂和第二驱动源，其中，所述传输手臂用于承载所述遮蔽盘或所述晶圆，所述第二驱动源用于驱动所述传输手臂在所述反应腔室与所述加热腔室之间运动；
    所述传输手臂包括竖直设置的旋转轴，以及垂直于所述旋转轴的连接臂和承载部，其中，所述旋转轴的下端与所述第二驱动源连接，所述旋转轴的上端与所述连接臂的一端连接，所述连接臂的另一端与所述承载部连接；
    所述第二升降装置包括沿所述基座的周向间隔设置的多个顶针，在所述承载部承载所述遮蔽盘或晶圆移动至所述反应腔室内时，所述承载部的至少 一部分能够从所述第二升降装置的相邻顶针之间的间隔移入多个顶针所围的空间中，以使所述遮蔽盘或晶圆位于所述基座上方；或者
    所述第一升降装置包括沿所述基座的周向间隔设置的多个顶针，在所述承载部承载所述遮蔽盘或晶圆移动至所述加热腔室内时，所述承载部的至少一部分能够从所述第一升降装置的相邻顶针之间的间隔移入多个顶针所围的空间中，以使所述遮蔽盘或晶圆位于所述热辐射装置下方。
  15. 一种半导体工艺设备，其特征在于，包括权利要求1-14中任意一项所述的工艺腔室。
  16. 根据权利要求15所述的半导体工艺设备，其特征在于，所述半导体工艺设备包括物理气相沉积设备。
  17. 一种薄膜沉积方法，其特征在于，包括：
    在反应腔室内的晶圆完成半导体工艺后，将加热腔室内的遮蔽盘下降至所述加热腔室中的第一承载位置，所述加热腔室与所述反应腔室连通；
    将所述晶圆传输至所述加热腔室中的第二承载位置，所述第二承载位置高于所述第一承载位置；
    从所述加热腔室的顶部向所述晶圆辐射热量，以对所述晶圆进行热处理。
PCT/CN2024/101917 2023-06-30 2024-06-27 工艺腔室、半导体工艺设备和薄膜沉积方法 Ceased WO2025002232A1 (zh)

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