Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
  • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
  • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
  • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
  • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
  • G02B6/13—Integrated optical circuits characterised by the manufacturing method
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
  • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
  • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
  • G02B6/13—Integrated optical circuits characterised by the manufacturing method
  • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
  • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
  • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
  • G02B6/13—Integrated optical circuits characterised by the manufacturing method
  • G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/11—Printed elements for providing electric connections to or between printed circuits
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
  • H05K3/42—Plated through-holes or plated via connections

Definitions

• This disclosure relates to a method for manufacturing a photoelectric composite wiring board, a photoelectric composite wiring board, a semiconductor package, and a laminate film.
• the optical circuit chip and the electronic circuit chip are packaged separately and mounted on a substrate.
• the optical circuit chip and the electronic circuit chip are placed on a redistribution layer, which is a silicon interposer, packaged together, and then mounted on a substrate (see "FOWLP and Si-Interposer for High-Speed Photonic Packaging", Lim Teck Guan, Eva Wai Leong Ching, Jong Ming Ching, Loh Woon Leng, David Ho Soon Wee and Surya Bhattacharya (2021 IEEE 71st Electronic Components and Technology Conference (ECTC))).
• the objective of this disclosure is to provide technology that can reduce the cost of semiconductor packages that incorporate optical circuit chips and electronic circuit chips.
• ⁇ 1> forming an insulating layer having a plurality of layers made of different materials on a substrate having a first wiring layer; forming an optical waveguide by exposing at least one of the insulating layers; forming a via hole in the insulating layer; forming a second wiring layer on the insulating layer and forming a via conductor in the via hole that connects the first wiring layer and the second wiring layer; A method for producing a photoelectric composite wiring board having the above structure.
• ⁇ 2> The method for producing an optoelectronic composite wiring board according to ⁇ 1>, wherein, among the plurality of layers, a layer forming the optical waveguide contains a material whose refractive index is modulated by exposure to light.
• ⁇ 3> The method for producing an optoelectronic composite wiring board according to ⁇ 2>, wherein the layer forming the optical waveguide contains a substance whose refractive index increases when exposed to light having a wavelength of 10 nm to 450 nm.
• ⁇ 4> The method for producing an optoelectronic composite wiring board according to ⁇ 2>, wherein the layer forming the optical waveguide contains a substance whose refractive index decreases when exposed to light having a wavelength of 10 nm to 450 nm.
• ⁇ 5> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 1> to ⁇ 4>, wherein at least one of the insulating layers contains a thermosetting resin.
• ⁇ 6> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 1> to ⁇ 5>, wherein the insulating layer is formed by laminating the layers one by one on the substrate.
• ⁇ 7> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 1> to ⁇ 6>, wherein at least one of the insulating layers is formed from a liquid resin material.
• ⁇ 8> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 1> to ⁇ 7>, wherein at least one of the insulating layers is formed of a film-like resin material.
• ⁇ 9> The method for manufacturing an optoelectronic composite wiring board according to any one of ⁇ 1> to ⁇ 8>, wherein the insulating layer is formed by mounting a laminate obtained by stacking the plurality of layers on the substrate.
• the insulating layer is formed by mounting a laminate obtained by stacking the plurality of layers on the substrate.
• the laminate is formed by stacking the layers formed of a film-like resin material.
• the insulating layer is formed by stacking three layers, The method for producing an optoelectronic composite wiring board according to ⁇ 1>, wherein the layer forming the optical waveguide is located between the three layers.
• ⁇ 12> forming a first insulating layer on a substrate having a first wiring layer; forming a first via hole in the first insulating layer; forming a second wiring layer on the first insulating layer and forming a first via conductor connecting the first wiring layer and the second wiring layer in the first via hole; forming a second insulating layer on the second wiring layer, the second insulating layer being made of a material different from that of the first insulating layer; exposing the second insulating layer to form an optical waveguide; forming a second via hole in the second insulating layer; forming a third wiring layer on the second insulating layer, and forming a second via conductor connecting the second wiring layer and the third wiring layer in the second via hole; A method for producing a photoelectric composite wiring board having the above structure.
• ⁇ 13> The method for producing an optoelectronic composite wiring board according to ⁇ 12>, wherein the second insulating layer contains a substance whose refractive index is modulated by exposure to light.
• ⁇ 14> The method for producing an optoelectronic composite wiring board according to ⁇ 13>, wherein the second insulating layer contains a substance whose refractive index increases when exposed to light having a wavelength of 10 nm to 450 nm.
• ⁇ 15> The method for producing an optoelectronic composite wiring board according to ⁇ 13>, wherein the second insulating layer contains a substance whose refractive index is decreased by exposure to light having a wavelength of 10 nm to 450 nm.
• ⁇ 16> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 12> to ⁇ 15>, wherein the first insulating layer and the second insulating layer contain a thermosetting resin.
• ⁇ 17> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 12> to ⁇ 16>, wherein at least one of the first insulating layer and the second insulating layer is formed of a liquid resin material.
• ⁇ 18> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 12> to ⁇ 17>, wherein at least one of the first insulating layer and the second insulating layer is formed of a film-like resin material.
• ⁇ 20> forming a third insulating layer on the third wiring layer, the third insulating layer being made of a material different from that of the second insulating layer; forming a third via hole in the third insulating layer; forming a fourth wiring layer on the third insulating layer, and forming a third via conductor connecting the third wiring layer and the fourth wiring layer in the third via hole; having The method for manufacturing an optoelectronic composite wiring board according to ⁇ 19>, wherein the second via conductor and the third via conductor overlap in a stacking direction of the second insulating layer and the third insulating layer.
• ⁇ 21> forming an optical waveguide by laminating a plurality of layers made of different materials on a substrate having a first wiring layer and exposing and developing one of the plurality of layers; forming a via hole in the insulating layer formed by laminating the plurality of layers; forming a second wiring layer on the insulating layer and forming a via conductor in the via hole that connects the first wiring layer and the second wiring layer; A method for producing a photoelectric composite wiring board having the above structure.
• ⁇ 22> The method for producing an optoelectronic composite wiring board according to ⁇ 21>, wherein the layer forming the optical waveguide contains a photosensitive material and a thermosetting resin.
• ⁇ 23> The method for producing an optoelectronic composite wiring board according to ⁇ 21>, wherein the layer forming the optical waveguide contains a negative or positive photosensitive material and a thermosetting resin.
• the insulating layer is formed by stacking three layers, The method for producing an optoelectronic composite wiring board according to ⁇ 21>, wherein the layer forming the optical waveguide is located between the three layers.
• ⁇ 25> The method for producing an optoelectronic composite wiring board according to ⁇ 21>, further comprising: laminating a plurality of layers of different materials on the substrate; exposing and developing the topmost layer to form an optical waveguide; and laminating another layer of the different material on the optical waveguide to form the insulating layer.
• ⁇ 26> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 21> to ⁇ 24>, wherein the insulating layer is formed by laminating the layers one by one on the substrate.
• ⁇ 27> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 21> to ⁇ 26>, wherein at least one layer of the plurality of layers made of different materials is formed from a liquid resin material.
• ⁇ 28> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 21> to ⁇ 26>, wherein at least one layer of the plurality of layers made of different materials is formed of a film-like resin material.
• ⁇ 29> forming a first insulating layer on a substrate having a first wiring layer; forming a first via hole in the first insulating layer; forming a second wiring layer on the first insulating layer and forming a first via conductor connecting the first wiring layer and the second wiring layer in the first via hole; forming a second insulating layer on the second wiring layer, the second insulating layer being made of a material different from that of the first insulating layer; exposing and developing the second insulating layer to form an optical waveguide; forming a third insulating layer on the second insulating layer, the third insulating layer being made of a material different from that of the second insulating layer; forming a second via hole in the third insulating layer; forming a third wiring layer on the third insulating layer, and forming a second via conductor connecting the second wiring layer and the third wiring layer in the second via hole; A method for producing a photoelectric composite wiring board having the above structure.
• ⁇ 30> The method for producing an optoelectronic composite wiring board according to ⁇ 29>, wherein the second insulating layer contains a photosensitive material and a thermosetting resin.
• the second insulating layer contains a negative or positive photosensitive material and a thermosetting resin.
• ⁇ 32> The method for manufacturing an optoelectronic composite wiring board according to any one of ⁇ 29> to ⁇ 31>, wherein the first via conductor and the second via conductor overlap in a stacking direction of the first insulating layer and the second insulating layer.
• ⁇ 33> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 29> to ⁇ 32>, wherein at least one of the first insulating layer and the second insulating layer is formed of a liquid resin material.
• ⁇ 34> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 29> to ⁇ 32>, wherein at least one of the first insulating layer and the second insulating layer is formed of a film-like resin material.
• ⁇ 35> a step of forming a first clad layer on the first surface, the second surface, and an inner wall surface of the through hole of a substrate having a first surface, a second surface opposite to the first surface, through holes opening on the first surface and the second surface, and a first wiring layer formed on the first surface; forming a core layer on the first clad layer on the first surface and the second surface, and forming the core layer between the first clad layers on the inner wall surface; forming a second clad layer on the core layer at the first surface and the second surface, respectively; exposing the core layer to light to form an optical waveguide; forming a via hole in a first insulating layer formed by the first clad layer, the second clad layer and the core layer on the first surface; forming a second wiring layer on the first insulating layer and forming a via conductor in the via hole to electrically connect the first wiring layer and the second wiring layer; A method for producing a photoelectric composite wiring board having the above structure.
• ⁇ 36> The method for producing an optoelectronic composite wiring board according to ⁇ 35>, wherein at least one of the first clad layer, the core layer and the second clad layer is formed from a liquid resin material.
• ⁇ 37> The method for producing an optoelectronic composite wiring board according to ⁇ 35>, wherein at least one of the first clad layer, the core layer and the second clad layer is formed of a film-like resin material.
• ⁇ 38> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 35> to ⁇ 37>, wherein the core layer contains a substance whose refractive index is modulated by exposure to light.
• ⁇ 40> The method for producing an optoelectronic composite wiring board according to ⁇ 39>, wherein at least one of the first clad layer, the core layer and the second clad layer is formed from a liquid resin material.
• ⁇ 41> The method for producing an optoelectronic composite wiring board according to ⁇ 39>, wherein at least one of the first clad layer, the core layer and the second clad layer is formed of a film-like resin material.
• ⁇ 42> The method for producing an optoelectronic composite wiring board according to any one of ⁇ 39> to ⁇ 41>, wherein the core layer contains a negative or positive photosensitive material and a thermosetting resin.
• ⁇ 47> The photoelectric composite wiring board according to ⁇ 46>, wherein the first via conductor and the second via conductor overlap in a stacking direction of the first insulating layer and the second insulating layer.
• ⁇ 48> a third insulating layer formed on the third wiring layer and having a third via hole; a fourth wiring layer formed on the third insulating layer; a third via conductor formed in the third via hole and connecting the third wiring layer and the fourth wiring layer; having The photoelectric composite wiring board according to ⁇ 46>, wherein the second via conductor and the third via conductor overlap in the stacking direction of the second insulating layer and the third insulating layer.
• a substrate having a first surface, a second surface opposite to the first surface, through holes respectively opening in the first surface and the second surface, and a first wiring layer formed on the first surface; a first insulating layer formed on the first surface of the substrate, the first insulating layer having a via hole; A second wiring layer formed on the first insulating layer; a via conductor electrically connecting the first wiring layer and the second wiring layer; a first optical waveguide formed in the first insulating layer; and a second insulating layer formed on the second surface of the substrate. a second optical waveguide formed in the second insulating layer; and a third optical waveguide formed in the through hole for optically connecting the first optical waveguide and the second optical waveguide.
• a photoelectric composite wiring board having the above structure.
• a semiconductor package comprising:
• the photoelectric composite wiring board according to ⁇ 48> an optical circuit chip connected to an optical waveguide of the optoelectronic composite wiring board; an electronic circuit chip disposed on a fourth wiring layer of the photoelectric composite wiring board;
• a semiconductor package comprising:
• the photoelectric composite wiring board according to ⁇ 49> an optical circuit chip connected to an optical waveguide of the optoelectronic composite wiring board; an electronic circuit chip disposed on the second wiring layer of the photoelectric composite wiring board;
• a semiconductor package comprising:
• the photoelectric composite wiring board according to ⁇ 50> an optical circuit chip connected to an optical waveguide of the optoelectronic composite wiring board; an electronic circuit chip disposed on a third wiring layer of the photoelectric composite wiring board;
• a semiconductor package comprising:
• the photoelectric composite wiring board according to ⁇ 51> an optical circuit chip optically connected to a first optical waveguide of the optoelectronic composite wiring board; an electronic circuit chip electrically connected to the second wiring layer of the photoelectric composite wiring board;
• a semiconductor package comprising:
• ⁇ 57> a laminate including a first resin layer containing a substance whose refractive index is modulated by light irradiation, and a second resin layer formed on each of both surfaces of the first resin layer and having a refractive index different from that of the first resin layer; a protective film provided on each of both sides of the laminate to protect each of the two sides; A laminated film having the above structure.
• the first resin layer contains a thermosetting resin.
• the substance contained in the first resin layer is a substance whose refractive index increases when irradiated with light.
• the technology disclosed herein makes it possible to reduce the cost of semiconductor packages that house optical circuit chips and electronic circuit chips.
• FIG. 1A is a schematic cross-sectional view showing one embodiment of a semiconductor package according to the present disclosure.
• FIG. 1B is a schematic cross-sectional view showing one embodiment of a semiconductor package according to the present disclosure.
• FIG. 2 is a schematic plan view of the semiconductor package shown in FIG. 1A.
• FIG. 3 is a schematic plan view of a modified example of the semiconductor package shown in FIG. 1A.
• FIG. 4 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure.
• FIG. 5 is a schematic plan view of the semiconductor package shown in FIG.
• FIG. 6 is a schematic plan view of a modified example of the semiconductor package shown in FIG.
• FIG. 7 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure.
• FIG. 1A is a schematic cross-sectional view showing one embodiment of a semiconductor package according to the present disclosure.
• FIG. 1B is a schematic cross-sectional view showing one embodiment of a
• FIG. 8 is a schematic plan view of the semiconductor package shown in FIG.
• FIG. 9 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure.
• FIG. 10 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure.
• FIG. 11 is a schematic plan view of the semiconductor package shown in FIG.
• FIG. 12 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure.
• FIG. 13 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure.
• FIG. 14 is a perspective view showing an optical input portion of an optical circuit chip used in the semiconductor package shown in FIG. FIG.
• FIG. 15 is a perspective view showing a modification of the optical input portion of the optical circuit chip used in the semiconductor package shown in FIG.
• FIG. 16A is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16B is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16C is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16D is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16A is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16B is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16C is
• FIG. 16E is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16F is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16G is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16H is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 16I is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 17 is a front view for explaining materials used in the method for manufacturing an optoelectronic composite wiring board.
• FIG. 18 is a schematic cross-sectional view illustrating a laminated film used in the method for producing an optoelectronic composite wiring board.
• FIG. 19 is a schematic cross-sectional view illustrating a laminated film used in the method for producing an optoelectronic composite wiring board.
• FIG. 20 is a schematic cross-sectional view illustrating a laminated film used in the method for producing an optoelectronic composite wiring board.
• FIG. 21A is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21A is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21B is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21C is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21D is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21E is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21F is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21G is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21H is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21I is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21J is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 21K is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 22A is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 22B is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 22C is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 22D is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 22E is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 22F is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 22G is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23A is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23B is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23C is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23A is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23B is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23D is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23E is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23F is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23G is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23H is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• FIG. 23I is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing an optoelectronic composite wiring board.
• process includes not only a process that is independent of other processes, but also a process that cannot be clearly distinguished from other processes, as long as the purpose of the process is achieved.
• the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages.
• the upper or lower limit value of that numerical range may be replaced with a value shown in the examples.
• each component may contain multiple types of the corresponding substance.
• the content or amount of each component means the total content or amount of the multiple substances present in the composition, unless otherwise specified.
• the term "layer” includes cases where the layer is formed over the entire area when the area in which the layer exists is observed, as well as cases where the layer is formed over only a portion of the area.
• FIG. 1A is a schematic cross-sectional view showing one embodiment of a semiconductor package according to the present disclosure.
• the semiconductor package 20 of the present disclosure includes an optoelectronic composite wiring board 30 , an optical circuit chip 50 , and an electronic circuit chip 60 .
• the photoelectric composite wiring board 30 includes a resin layer, optical wiring, and electrical wiring.
• the photoelectric composite wiring board 30 includes a substrate 32 and an insulating layer 34, an optical waveguide 36 as optical wiring, a wiring layer 38 as electrical wiring, and via conductors 78 (see FIG. 1B).
• the substrate 32 has a wiring layer 33 (see FIG. 1B) as electrical wiring.
• the wiring layer 33 is provided on the surface of the substrate 32.
• the substrate 32 may be an inorganic substrate such as glass or ceramic, an organic substrate such as a copper-clad laminate, or a composite substrate in which a prepreg, build-up film, or rewiring resin material is laminated to the above.
• the insulating layer 34 is made of a resin material and is disposed on the substrate 32. Specifically, the insulating layer 34 is disposed on the substrate 32 and the wiring layer 33 as shown in FIG. 1B. In this embodiment, the insulating layer 34 is configured from three layers, for example. This insulating layer 34 is mainly configured from a first layer 70 disposed on the substrate 32, a second layer 72 disposed on the first layer 70, and a third layer 74 disposed on the second layer 72. Note that the number of layers that constitute the insulating layer 34 is not limited to the above.
• the optical waveguide 36 is a path that guides an optical signal, and is provided inside the insulating layer 34, as shown in Figures 1A and 1B.
• the optical waveguide 36 is formed, for example, from a part of the second layer 72.
• an optical guide section 42 is provided at the end of the optical waveguide 36.
• This optical guide section 42 has a guide body 42A and a reflecting mirror 42B. Light emitted from the end of the optical waveguide 36 is reflected by the reflecting mirror 42B, and travels through the guide body 42A to the optical circuit chip 50.
• the optical guide section 42 is provided in the insulating layer 34.
• the wiring layer 38 is provided inside the insulating layer 34 or on the surface of the insulating layer 34.
• the wiring layer 38 of the present embodiment is provided on the surface of the insulating layer 34, as shown in FIG 1B.
• the wiring layers 38 may be provided inside the insulating layer 34 and on the surface of the insulating layer 34.
• Each wiring layer may contain one or more metals. Examples of metals constituting each wiring layer include copper, silver, gold, and aluminum. The metals constituting each wiring layer are not limited to the above metals.
• the via conductor 40 electrically connects the wiring layer 33 and the wiring layer 38. If there are multiple wiring layers 38, adjacent wiring layers 38 in the stacking direction may be electrically connected to each other by other via conductors.
• the metal constituting the via conductor may be the same as the metal constituting the wiring layer 38.
• the optical circuit chip 50 is disposed on the optoelectronic composite wiring board 30.
• the optical circuit chip 50 is connected to the optical waveguide 36.
• the optical circuit chip 50 is connected to the optical waveguide 36 via the optical guide section 42.
• the optical circuit chip 50 has a light introduction port 52 (see FIG. 14) on the insulating layer 34 side, and the light guide section 42 is connected to the light introduction port 52.
• a plurality of light introduction ports 52 are provided at intervals on the optical circuit chip 50.
• the light introduction port 52 is not limited to a specific opening shape as long as it can introduce light, and may be a circular opening as shown in FIG. 14 or a tapered opening as shown in FIG. 15.
• the optical circuit chip 50 is also connected to the wiring layer for the optical circuit chip 50 in the insulating layer 34 via the chip electrode 54.
• the electronic circuit chip 60 is disposed on the wiring layer 38.
• the wiring layer 38 is not shown in Fig. 1A.
• the electronic circuit chip 60 is connected to the wiring layer 38 via chip electrodes 62.
• FIG. 2 is a schematic plan view of the semiconductor package shown in FIG. 1A.
• an electronic circuit chip 60 is disposed in the center of the optoelectronic composite wiring board 30, and a plurality of optical circuit chips 50 are disposed so as to surround the electronic circuit chip 60.
• a plurality of optical waveguides 36 extending from optical connectors 44 provided on the periphery of the optoelectronic composite wiring board 30 are connected to these optical circuit chips 50.
• optical connectors 44 are provided on each of the four sides of the optoelectronic composite wiring board 30 in the example of FIG. 2, the present disclosure is not limited to this configuration.
• a pair of optical connectors 44 may be provided on each of two opposing sides of the optoelectronic composite wiring board 30.
• the optical circuit chip 50 and the electronic circuit chip 60 are arranged on the optoelectronic composite wiring board 30 without using a silicon interposer as a relay material. Therefore, the semiconductor package 20 is less expensive than a configuration that uses a silicon interposer.
• the optical waveguide 36 and the optical circuit chip 50 are connected via the optical guide portion 42 as shown in FIG. 1A, but the present disclosure is not limited to this configuration.
• the light inlet 52 may be connected directly to the portion that constitutes the optical waveguide 36.
• the semiconductor package 21 may be arranged with an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44 as in the example shown in FIG. 5, or may be arranged with an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44 as in the example shown in FIG. 6.
• the optical circuit chip 50 is disposed on the optoelectronic composite wiring board 30 as shown in FIG. 1A, but the present disclosure is not limited to this configuration.
• the optical circuit chip 50 may be embedded in the insulating layer 34 constituting the optoelectronic composite wiring board 30.
• a reflecting mirror 42B may be disposed at the end of the optical waveguide 36 to reflect light toward the optical introduction port 52 of the embedded optical circuit chip 50.
• the semiconductor package 22 may be disposed with an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44 as in the example shown in FIG. 8.
• the optical waveguide 36 may be directly connected to the portion constituting the optical introduction port 52.
• the optical circuit chip 50 is embedded in the insulating layer 34 constituting the optoelectronic composite wiring board 30, but the present disclosure is not limited to this configuration.
• the optical circuit chip 50 may be embedded in the substrate 32 constituting the optoelectronic composite wiring board 30.
• a reflecting mirror 42B may be disposed at the end of the optical waveguide 36 to reflect light toward the light introduction port 52 of the embedded optical circuit chip 50.
• the semiconductor package 24 may be disposed with an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44 as in the example shown in FIG. 11.
• the optical waveguide 36 may be directly connected to the portion constituting the light introduction port 52.
• the optical circuit chip 50 and the electronic circuit chip 60 are disposed on the insulating layer 34 of the optoelectronic composite wiring board 30, but the present disclosure is not limited to this configuration.
• the optical circuit chip 50 and the electronic circuit chip 60 may be disposed on the surface of the substrate 32 opposite the insulating layer 34.
• a through hole 32A is provided in the substrate 32, the optical waveguide 36 is passed through this through hole 32A, and the optical circuit chip 50 is disposed so that the light introduction port 52 is located at the end of the optical waveguide 36. This connects the optical waveguide 36 to the optical circuit chip 50.
• 16A to 16I are schematic cross-sectional views illustrating one embodiment of a method for manufacturing optoelectronic composite wiring board 30.
• FIG. 16A to 16I are schematic cross-sectional views illustrating one embodiment of a method for manufacturing optoelectronic composite wiring board 30.
• an insulating layer 34 having multiple layers made of different materials is formed on a substrate 32 having a wiring layer 33.
• a first layer 70 (cladding layer) is disposed on the substrate 32
• a second layer 72 (core layer) is disposed on the first layer 70
• a third layer 74 (cladding layer) is disposed on the second layer 72.
• the second layer 72 contains a substance whose refractive index is modulated by exposure.
• the second layer 72 is a photosensitive layer containing a substance whose refractive index increases by exposure to light having a wavelength of 10 nm to 450 nm, including ultraviolet rays.
• At least one layer constituting the insulating layer 34 may contain a thermosetting resin.
• each layer constituting the insulating layer 34 (first layer 70, second layer 72, and third layer 74) contains a thermosetting resin.
• the photosensitive resin composition constituting the second layer 72 is not particularly limited, and may be a conventionally known material, specifically, a material that undergoes a photodimerization reaction, a material that undergoes an elimination reaction by light irradiation, etc. may be used.
• materials that undergo an elimination reaction by light irradiation include ⁇ -diazoketone compounds and azide compounds having an azide group, which is a functional group from which nitrogen is eliminated by light irradiation.
• azide group which is a functional group from which nitrogen is eliminated by light irradiation.
• an alkali-soluble resin having a phenolic hydroxyl group an acrylic resin, an epoxy resin, a polyimide resin, a polyamideimide resin, a polybenzoxazole resin, etc. may be appropriately selected and used.
• the insulating layer 34 may be formed by stacking each layer that constitutes the insulating layer 34 one by one on the substrate 32.
• the first layer 70 and the third layer 74 may be formed using a liquid resin material L1 (varnish), and the second layer 72 may be formed using a liquid resin material L2 (varnish).
• the insulating layer 34 is formed by applying the liquid resin material L1 onto the substrate 32, applying the resin material L2 onto the resin material L1 after the resin material L1 has hardened, and applying the resin material L1 onto the resin material L2 after the resin material L2 has hardened.
• the first layer 70 and the third layer 74 may be formed using a film-like resin material F1, and the second layer 72 may be formed using a film-like resin material F2.
• the film-like resin material F1 is disposed on the substrate 32, the resin material F2 is then disposed on the resin material F1, and then the resin material F1 is disposed on the resin material F2, thereby forming the insulating layer 34.
• film-like protective materials P may be provided on both sides of the resin material F1.
• protective materials P may be provided on both sides of the resin material F2.
• the materials of the respective protective materials P may be different.
• one protective material P may be used for supporting the film-like resin material, and the other protective material P may be used for protecting the surface of the film-like resin material.
• the film-like resin material may be formed by applying a liquid resin material onto the protective material P, or another protective material P may be placed on the applied resin material.
• a laminated film SF1 may be used in which film-like resin materials F1 and F2 that form the second layer 72 and the third layer 74 are laminated.
• the amount of protective material P can be reduced, making it easier to cut costs. Also, manufacturing efficiency is improved compared to laminating each layer on the substrate 32.
• a laminated film SF2 may be used in which film-like resin materials F1, F2, and F1 that form the first layer 70, second layer 72, and third layer 74 are laminated.
• the amount of protective material P can be further reduced, making it easier to cut costs. Also, manufacturing efficiency is improved compared to laminating each layer on the substrate 32.
• a mask material M1 is placed on the insulating layer 34. Then, the insulating layer 34 is exposed to light. By the exposure, as shown in FIG. 16C, the second layer 72 constituting the insulating layer 34 is exposed, and the optical waveguide 36 is formed. Note that the portion of the second layer 72 that is not exposed by the mask material M1 becomes the optical waveguide 36. After the exposure of the insulating layer 34 is completed, the mask material M1 is removed from above the insulating layer 34.
• a via hole 76 is formed in the insulating layer 34.
• This via hole 76 is a through hole that continuously penetrates the first layer 70, the second layer 72, and the third layer 74.
• the via hole 76 may be formed, for example, by a drill, by laser irradiation, or by exposure and development.
• the wiring layer 38 is formed on the insulating layer 34, and the via conductor 78 that connects the wiring layer 33 and the wiring layer 38 is formed in the via hole 76.
• a seed layer 78A is placed on the insulating layer 34, that is, on the third layer 74 (the surface of the third layer 74) and on the inner surface of the via hole 76.
• a resist material R1 is placed on the seed layer 78A.
• an electrolytic plating layer 78B is placed on the seed layer 78A. After that, as shown in FIG.
• the resist material R1 is removed from the seed layer 78A. Then, the portion of the seed layer 78A that is not covered with the electrolytic plating layer 78B is removed. This forms the via conductor 78 and the wiring layer 38. Note that the portion inside the via hole constitutes the via conductor 78, and the portion on the third layer 74 constitutes the wiring layer 33.
• an optoelectronic composite wiring board 30 having optical wiring and electrical wiring is manufactured.
• the second layer 72 is a photosensitive layer containing a substance whose refractive index increases when exposed to light having a wavelength of 10 nm to 450 nm, including ultraviolet rays, but the present disclosure is not limited to this configuration.
• the second layer 72 may be a photosensitive layer containing a substance whose refractive index decreases when exposed to light having a wavelength of 10 nm to 450 nm, including ultraviolet rays.
• photoelectric composite wiring board 130 which is a modified version of photoelectric composite wiring board 30.
• the photoelectric composite wiring board 130 has a first layer 170 (clad layer) disposed on a substrate 32 having a wiring layer 33, a second layer 172 (core layer) disposed on the first layer 170, and a third layer 174 (clad layer) disposed on the second layer 172.
• the first layer 170, the second layer 172, and the third layer 174 form an insulating layer on the substrate 32.
• the second layer 172 is made of the same resin material as the second layer 72.
• a first layer 170 is formed on a substrate 32 having a wiring layer 33.
• the first layer 170 may be formed using a liquid resin material L1 or a film-like resin material F1.
• a via hole 176 is formed in the first layer 170.
• This via hole 176 is a through hole that penetrates the first layer 170.
• the via hole 176 may be formed, for example, by a drill, by laser irradiation, or by exposure and development.
• a wiring layer 190 is formed on the first layer 170, and a via conductor 180 is formed in the via hole 76 to connect the wiring layer 33 and the wiring layer 190.
• the method of forming the wiring layer 190 and the via conductor 180 is similar to the method of forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted.
• the portion in the via hole 76 constitutes the via conductor 180, and the portion on the first layer 170 constitutes the wiring layer 190.
• the second layer 172 is formed on the first layer 170 and the wiring layer 190.
• the second layer 172 may be formed using a liquid resin material L2 or a film-like resin material F2.
• a mask material M1 is placed on the second layer 172. Then, the second layer 172 is exposed to light. By the exposure, the second layer 172 is exposed as shown in FIG. 21F, and the optical waveguide 136 is formed. Note that the portion of the second layer 172 that is not exposed by the mask material M1 becomes the optical waveguide 136. After the exposure of the second layer 172 is completed, the mask material M1 is removed from the second layer 172.
• a via hole 177 is formed in the second layer 172.
• This via hole 177 is a through hole that penetrates the second layer 172.
• the via hole 177 may be formed, for example, by a drill or by laser irradiation.
• a wiring layer 192 is formed on the second layer 172, and a via conductor 182 is formed in the via hole 177 to connect the wiring layer 190 and the wiring layer 192.
• the method of forming the wiring layer 192 and the via conductor 182 is similar to the method of forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted.
• the portion in the via hole 177 constitutes the via conductor 182
• the portion on the second layer 172 constitutes the wiring layer 192.
• a third layer 174 is formed on the second layer 172 and the wiring layer 192.
• the third layer 174 may be formed using a liquid resin material L1 or a film-like resin material F1.
• a via hole 178 is formed in the third layer 174.
• This via hole 178 is a through hole that penetrates the third layer 174.
• the via hole 178 may be formed, for example, by a drill, by laser irradiation, or by exposure and development.
• a wiring layer 194 is formed on the third layer 174, and a via conductor 184 is formed in the via hole 178 to connect the wiring layer 192 and the wiring layer 194.
• the method of forming the wiring layer 194 and the via conductor 184 is similar to the method of forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted.
• the portion in the via hole 178 constitutes the via conductor 184
• the portion on the third layer 174 constitutes the wiring layer 194.
• an optoelectronic composite wiring board 130 having optical wiring and electrical wiring is manufactured.
• the second layer 172 is a photosensitive layer containing a substance whose refractive index increases when exposed to light having a wavelength of 10 nm to 450 nm, including ultraviolet rays, but the present disclosure is not limited to this configuration.
• the second layer 172 may be a photosensitive layer containing a substance whose refractive index decreases when exposed to light having a wavelength of 10 nm to 450 nm, including ultraviolet rays.
• conductors 180, 182, and 184 overlap in the stacking direction, but the present disclosure is not limited to this configuration. They may not overlap, or may partially overlap.
• photoelectric composite wiring board 230 which is a modified version of photoelectric composite wiring board 30.
• the photoelectric composite wiring board 230 has a first layer 270 (cladding layer) disposed on a substrate 32 having a wiring layer 33, a resin layer 274 (cladding layer) disposed on the first layer 270, and an optical waveguide 236 disposed on the first layer 270 within the resin layer 274.
• the first layer 270, the resin layer 274, and the optical waveguide 236 form an insulating layer on the substrate 32.
• the second layer 272 contains a negative or positive photosensitive material and a thermosetting resin.
• the photosensitive resin composition constituting the second layer 272 is not particularly limited, and may be appropriately selected from conventionally known materials, specifically, alkali-soluble resins having phenolic hydroxyl groups, carboxyl groups, etc., acrylic resins, epoxy resins, polyimide resins, polyamideimide resins, polybenzoxazole resins, etc.
• the photosensitive resin composition may be either positive type or negative type. Note that a negative type development is achieved by combining a monomer or polymer containing a photopolymerizable functional group with a photopolymerization initiator. Also, a positive type development is achieved by combining with a dissolution inhibitor that becomes alkali-soluble when irradiated with light.
• a first layer 270 is formed on a substrate 32 having a wiring layer 33.
• the first layer 270 may be formed using a liquid resin material L1 or a film-like resin material F1.
• a second layer 272 is formed on the first layer 270.
• the second layer 272 may be formed using a liquid resin material L2 or a film-like resin material F2.
• a mask material M1 is placed on the second layer 272. Then, the second layer 272 is exposed to light. Thereafter, the mask material M1 is removed from the second layer 272, and the second layer 272 is developed as shown in FIG. 22D. In other words, the unexposed portion of the second layer 272 is removed. Here, the exposed portion of the second layer 272 becomes the optical waveguide 236.
• a resin layer 274 is formed on the first layer 270 and the optical waveguide 236.
• the resin layer 274 may be formed using a liquid resin material L1 or a film-like resin material F1.
• a via hole 276 is formed in the first layer 270 and the resin layer 274.
• This via hole 276 is a through hole that penetrates the first layer 270 and the resin layer 274.
• the via hole 276 may be formed, for example, by a drill, by laser irradiation, or by exposure and development.
• a wiring layer 290 is formed on the resin layer 274, and a via conductor 280 is formed in the via hole 276 to connect the wiring layer 33 and the wiring layer 290.
• the method of forming the wiring layer 290 and the via conductor 280 is similar to the method of forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted.
• the portion in the via hole 276 constitutes the via conductor 280
• the portion on the resin layer 274 constitutes the wiring layer 190.
• an optoelectronic composite wiring board 230 having optical wiring and electrical wiring is manufactured.
• the unexposed portions of the second layer 272 are removed, but the configuration of the mask material M1 may be changed to remove the exposed portions of the second layer 272 and use the unexposed portions as the optical waveguide 236.
• photoelectric composite wiring board 330 which is a modified version of photoelectric composite wiring board 30.
• FIG. 23I are schematic cross-sectional views for explaining one embodiment of a method for manufacturing a photoelectric composite wiring board 330.
• a first layer 370 (cladding layer) is disposed on a substrate 32 having a wiring layer 33
• a resin layer 374 (cladding layer) is disposed on the first layer 370
• an optical waveguide 336 is disposed on the first layer 370 within the resin layer 374.
• the first layer 370, the resin layer 374, and the optical waveguide 336 form an insulating layer on the substrate 32.
• the second layer 372 is made of the same material as the second layer 272.
• a first layer 370 is formed on a substrate 32 having a wiring layer 33.
• the first layer 370 may be formed using a liquid resin material L1 or a film-like resin material F1.
• a via hole 376 is formed in the first layer 370.
• This via hole 376 is a through hole that penetrates the first layer 370.
• the via hole 376 may be formed, for example, by a drill, by laser irradiation, or by exposure and development.
• a wiring layer 390 is formed on the first layer 370, and a via conductor 380 is formed in the via hole 376 to connect the wiring layer 33 and the wiring layer 390.
• the method of forming the wiring layer 390 and the via conductor 380 is similar to the method of forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted.
• the portion in the via hole 376 constitutes the via conductor 380
• the portion on the first layer 370 constitutes the wiring layer 390.
• the second layer 372 is formed on the first layer 370 and the wiring layer 390.
• the second layer 372 may be formed using a liquid resin material L2 or a film-like resin material F2.
• a mask material M1 is placed on the second layer 372. Then, the second layer 372 is exposed to light. Thereafter, the mask material M1 is removed from the second layer 372, and the second layer 372 is developed as shown in FIG. 23F. In other words, the unexposed portion of the second layer 372 is removed. Here, the exposed portion of the second layer 372 becomes the optical waveguide 336.
• a resin layer 374 is formed on the first layer 370 and the optical waveguide 336.
• the resin layer 374 may be formed using a liquid resin material L1 or a film-like resin material F1.
• a via hole 377 is formed in the first layer 370 and the resin layer 374.
• This via hole 377 is a through hole that penetrates the first layer 370 and the resin layer 374.
• the via hole 377 may be formed, for example, by a drill, by laser irradiation, or by exposure and development.
• a wiring layer 392 is formed on the resin layer 374, and a via conductor 382 is formed in the via hole 377 to connect the wiring layer 33 and the wiring layer 392.
• the method of forming the wiring layer 392 and the via conductor 380 is similar to the method of forming the via conductor 78 and the wiring layer 38, and therefore a description thereof will be omitted.
• the portion in the via hole 377 constitutes the via conductor 382
• the portion on the resin layer 374 constitutes the wiring layer 392.
• an optoelectronic composite wiring board 330 having optical wiring and electrical wiring is manufactured.
• the unexposed portions of the second layer 372 are removed, but the configuration of the mask material M1 may be changed to remove the exposed portions of the second layer 372 and use the unexposed portions as the optical waveguide 336.
• the laminated film SF2 has a laminate (insulating layer) having a first resin layer containing a substance whose refractive index is modulated by light irradiation, a second resin layer formed on both sides of the first resin layer and having a refractive index different from that of the first resin layer, and a protective material P provided on both sides of the laminate to protect both sides.
• the first resin layer contains a thermosetting resin.
• the substance contained in this first resin layer may be a substance whose refractive index increases by light irradiation or a substance whose refractive index decreases by light irradiation.
• the second resin layer may also contain a thermosetting resin.
• the support film is not particularly limited, but examples thereof include polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyethersulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, polyarylate, polysulfone, and liquid crystal polymers.
• polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate
• polyolefins such as polyethylene and polypropylene
• polycarbonate polyamide, polyimide, polyamideimide, polyetherimide, polyethersulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, polyarylate, polysulfone, and liquid crystal polymers
• polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polycarbonate, polyamide, polyimide, polyamideimide, polyphenylene ether, polyphenylene sulfide, polyarylate, and polysulfone are preferred.
• a highly transparent support film from the viewpoint of improving the transmittance of the actinic ray for exposure and reducing sidewall roughness of the core pattern, it is more preferable to use a highly transparent support film.
• a film that has been subjected to a release treatment with a silicone compound, a fluorine-containing compound, or the like may be used as necessary.
• the thickness of the support film may be appropriately changed depending on the desired flexibility, but is preferably 3 ⁇ m to 250 ⁇ m. If it is 3 ⁇ m or more, the film strength is sufficient, and if it is 250 ⁇ m or less, sufficient flexibility is obtained. From the above viewpoints, the thickness of the support film is more preferably 5 ⁇ m to 200 ⁇ m, and further preferably 7 ⁇ m to 150 ⁇ m.
• the photosensitive resin film produced by applying a photosensitive resin varnish or a photosensitive resin composition onto a support film may have a three-layer structure consisting of a support film, a resin layer, and a protective film, if necessary, by attaching a protective film onto the resin layer.
• the protective film is not particularly limited, but from the viewpoint of flexibility and toughness, polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene, etc. are preferred.
• a film that has been subjected to a release treatment using a silicone compound, a fluorine-containing compound, etc. may be used as necessary.
• the thickness of the protective film may be changed appropriately depending on the desired flexibility, but is preferably 10 ⁇ m to 250 ⁇ m. If it is 10 ⁇ m or more, the film strength is sufficient, and if it is 250 ⁇ m or less, sufficient flexibility is obtained. From the above viewpoints, the thickness of the protective film is more preferably 15 ⁇ m to 200 ⁇ m, and even more preferably 20 ⁇ m to 150 ⁇ m.
• a substrate having multiple insulating layers on the first wiring may be prepared, and the prepared substrate may be subjected to a process such as exposure to light.

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