Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/018—Dielectrics
  • H01G4/06—Solid dielectrics
  • H01G4/08—Inorganic dielectrics
  • H01G4/085—Vapour deposited
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
  • H01G2/02—Mountings
  • H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
  • H01G2/065—Mountings specially adapted for mounting on a printed-circuit support for surface mounting, e.g. chip capacitors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/018—Dielectrics
  • H01G4/06—Solid dielectrics
  • H01G4/08—Inorganic dielectrics
  • H01G4/10—Metal-oxide dielectrics
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/0029—Processes of manufacture
  • H01G9/0032—Processes of manufacture formation of the dielectric layer
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/022—Electrolytes; Absorbents
  • H01G9/025—Solid electrolytes
  • H01G9/032—Inorganic semiconducting electrolytes, e.g. MnO2
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/04—Electrodes or formation of dielectric layers thereon
  • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
  • H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/04—Electrodes or formation of dielectric layers thereon
  • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/04—Electrodes or formation of dielectric layers thereon
  • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
  • H01G9/052—Sintered electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/04—Electrodes or formation of dielectric layers thereon
  • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
  • H01G9/055—Etched foil electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/07—Dielectric layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/145—Liquid electrolytic capacitors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/15—Solid electrolytic capacitors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/04—Electrodes or formation of dielectric layers thereon
  • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
  • H01G2009/05—Electrodes or formation of dielectric layers thereon characterised by their structure consisting of tantalum, niobium, or sintered material; Combinations of such electrodes with solid semiconductive electrolytes, e.g. manganese dioxide

Definitions

• This disclosure relates to capacitors, electric circuits, circuit boards, devices, capacitor components, and methods for manufacturing capacitors.
• capacitors with a dielectric layer formed by a vapor phase method such as atomic deposition are known.
• Patent Document 1 describes an electrolytic capacitor with a dielectric film formed on the surface of the anode foil facing the separator. This dielectric film is formed by atomic layer deposition.
• Patent Document 2 describes an electrolytic capacitor that includes a predetermined electrode and at least one of an electrolytic solution and a solid electrolyte impregnated in the porous portion of the electrode.
• the porous portion of the electrode includes a porous body, a first dielectric layer that covers at least a portion of the porous body, and a second dielectric layer that covers at least a portion of the first dielectric layer.
• the porous body is formed from a first metal integrally with a core portion.
• the second dielectric layer is formed by atomic layer deposition.
• the present disclosure provides a capacitor that is advantageous in terms of voltage resistance and high capacity.
• the capacitor of the present disclosure comprises: A porous body including a plurality of pores; and a conductor.
• the porous body is A conductive substrate; a first dielectric layer disposed on the substrate; and a second dielectric layer disposed on the substrate.
• the conductor is disposed on the first dielectric layer and the second dielectric layer; the first dielectric layer is disposed in a first portion of the porous body including a boundary between the porous body and an outside of the porous body, The second dielectric layer is disposed in a second portion of the porous body that is located more inwardly of the porous body than the first portion.
• the present disclosure provides a capacitor that is advantageous in terms of voltage resistance and high capacity.
• FIG. 1 is a cross-sectional view showing an example of a capacitor according to the present disclosure.
• FIG. 2 is a cross-sectional view of the portion enclosed by the rectangle II in FIG.
• FIG. 3 is a flowchart showing an example of a method for manufacturing a capacitor according to the present disclosure.
• FIG. 4 is a cross-sectional view showing another example of a capacitor according to the present disclosure.
• FIG. 5 is a cross-sectional view showing yet another example of a capacitor according to the present disclosure.
• FIG. 6 is a cross-sectional view showing yet another example of a capacitor according to the present disclosure.
• FIG. 7 is a cross-sectional view of the portion enclosed by the rectangle VII in FIG.
• FIG. 8A is a diagram illustrating an example of an electric circuit according to the present disclosure.
• FIG. 8B is a diagram illustrating an example of a circuit board according to the present disclosure.
• FIG. 8C is a schematic diagram illustrating an example of the device of the present disclosure.
• the electrolytic capacitor described in Patent Document 2 includes a first dielectric layer that covers at least a portion of the porous body, and a second dielectric layer that covers at least a portion of the first dielectric layer.
• the capacitance of a capacitor is inversely proportional to the thickness of the dielectric layer. For this reason, it is difficult to say that forming a second dielectric layer to cover the first dielectric layer, as in the electrolytic capacitor described in Patent Document 2, is advantageous in terms of increasing the capacitance of the capacitor.
• there is a possibility that the formation of defect levels at the interface between the first and second dielectric layers will result in a decrease in voltage resistance, and that the dielectric layer will peel off due to internal stress caused by the difference in thermal expansion between the first and second dielectric layers.
• the present inventors have conducted extensive research into the configuration of a capacitor that is advantageous in terms of voltage resistance and high capacity while having a porous body that includes a conductive substrate.
• the present inventors have newly discovered that a capacitor can have an advantageous configuration in terms of voltage resistance and high capacity by adjusting the dielectric layers formed on the substrate at different locations of the porous body, and have devised the capacitor disclosed herein.
• the capacitor 1a is a cross-sectional view showing an example of a capacitor of the present disclosure.
• the capacitor 1a includes a substrate 10, a first dielectric layer 21, a second dielectric layer 22, and a conductor 30.
• the substrate 10 is conductive.
• the first dielectric layer 21 and the second dielectric layer 22 are each disposed on the substrate 10.
• the first dielectric layer 21 and the second dielectric layer 22 are each in contact with the substrate 10.
• a natural oxide film may be formed on the conductive substrate.
• the first dielectric layer 21 and the second dielectric layer 22 are each a dielectric layer different from a layer consisting only of a natural oxide film.
• the substrate 10, the first dielectric layer 21, and the second dielectric layer 22 constitute a porous body 15.
• the porous body 15 has holes 15p extending inward.
• the first dielectric layer 21 is disposed in a first portion 15a in the porous body 15.
• the first portion 15a is a portion including a boundary 16 with the outside of the porous body 15.
• the second dielectric layer 22 is disposed in the second portion 15b of the porous body 15.
• the second portion 15b is a portion of the porous body 15 located inside the first portion 15a.
• the first dielectric layer 21 is not limited to a specific dielectric layer.
• the first dielectric layer 21 includes, for example, a vapor deposition film.
• the relative dielectric constant of the material constituting the first dielectric layer 21 is likely to be high, and the capacitor 1a is more likely to have a high capacitance.
• vapor deposition may include physical vapor deposition and chemical vapor deposition as described in the Japanese Industrial Standard JIS H0211-1992.
• the first dielectric layer 21 may include a natural oxide film in the portion in contact with the substrate 10.
• the vapor deposition film may be a film formed by a gas phase method.
• the gas phase method is not limited to a specific gas phase method. Examples of the gas phase method are atomic layer deposition (ALD), chemical vapor deposition (CVD), and chemical vapor methods such as mist CVD.
• the material of the first dielectric layer 21 is not limited to a specific material.
• the first dielectric layer 21 contains, for example, a metal compound.
• the metal compound contains, for example, at least one selected from the group consisting of a metal oxide, a metal nitride, and a metal oxynitride.
• the metal compound contains at least one selected from the group consisting of hafnium, zirconium, aluminum, tantalum, titanium, silicon, and zinc. In this case, the capacitor 1a is more likely to have the desired voltage resistance, and the capacitor 1a is more likely to have a high capacitance.
• metal oxides contained in the first dielectric layer 21 are HfO2 , ZrO2 , Hf1 - xZrxO2 , Al2O3 , Ta2O5 , TiO2 , SiO2 , and ZnO.
• x satisfies the condition 0 ⁇ x ⁇ 1 .
• metal nitrides contained in the first dielectric layer 21 are HfN, ZrN , Hf1 - xZrxN , AlN, and SiN.
• metal oxynitrides contained in the first dielectric layer 21 are HfON, ZrON, HfZrON, AlON, and SiON.
• the first dielectric layer 21 may further contain at least one selected from the group consisting of yttrium, cerium, and gallium. In this case, the first dielectric layer 21 is likely to have a higher relative dielectric constant.
• the thickness of the first dielectric layer 21 is not limited to a specific value.
• the thickness is, for example, 5 nm or more. This suppresses leakage current and makes it easier for the capacitor 1a to have the desired voltage resistance.
• the thickness of the first dielectric layer 21 is, for example, 500 nm or less. This makes it easier for the capacitor 1a to have a high capacitance.
• the thickness of the first dielectric layer 21 may be 10 nm or more, or may be 400 nm or less, 300 nm or less, 200 nm or less, 100 nm or less, 50 nm or less, or 20 nm or less.
• the second dielectric layer 22 is not limited to a specific dielectric layer.
• the second dielectric layer 22 is, for example, a layer containing a different type of dielectric from the first dielectric layer 21.
• the second dielectric layer 22 contains, for example, an anodic oxide film.
• the second dielectric layer 22 is formed on the substrate 10 even if the second portion 15b is away from the boundary 16.
• the second dielectric layer 22 is more likely to be formed uniformly with the desired thickness in the second portion 15b. This makes it easier for the capacitor 1a to have the desired voltage resistance.
• the second dielectric layer 22 may contain an oxide film other than a natural oxide film or an anodic oxide film.
• the second dielectric layer 22 may contain an oxide film formed by heat treatment in an oxidizing atmosphere.
• the material of the second dielectric layer 22 is not limited to a specific material.
• the second dielectric layer 22 includes, for example, an oxide.
• the oxide includes, for example, at least one selected from the group consisting of hafnium, zirconium, aluminum, tantalum, titanium, silicon, and niobium.
• the capacitor 1a is more likely to have the desired voltage resistance and a high capacitance.
• oxides contained in the second dielectric layer 22 include HfO2 , ZrO2 , Hf1 - xZrxO2 , Al2O3 , Ta2O5 , TiO2 , SiO2 , and Nb2O5 .
• x satisfies the condition 0 ⁇ x ⁇ 1 .
• the second dielectric layer 22 preferably contains at least one selected from the group consisting of Al2O3 and Ta2O5 . In this case, the capacitor 1a is more likely to have the desired voltage resistance.
• the thickness of the second dielectric layer 22 is not limited to a specific value.
• the thickness is, for example, 5 nm or more. This suppresses leakage current and makes it easier for the capacitor 1a to have the desired voltage resistance.
• the thickness of the second dielectric layer 22 is, for example, 500 nm or less. This makes it easier for the capacitor 1a to have a high capacitance.
• the thickness of the second dielectric layer 22 may be 10 nm or more, or may be 400 nm or less, 300 nm or less, 200 nm or less, 100 nm or less, 50 nm or less, or 20 nm or less.
• FIG. 2 is a cross-sectional view of the portion surrounded by rectangle II in FIG. 1.
• the first dielectric layer 21 and the second dielectric layer 22 are in contact with each other at the boundary between the first portion 15a and the second portion 15b.
• the end of the first dielectric layer 21 may overlap the end of the second dielectric layer 22.
• deposition a solid component derived from a gas phase component adheres to a substrate to form a film.
• an oxide film is formed by oxidizing a part of the surface of the anode. Due to the difference in the film formation mechanism, the end of the first dielectric layer 21 including the deposition film can be disposed on the end of the second dielectric layer 22 including the anodized film, as shown in FIG. 2.
• the relationship between the dielectric constant ⁇ 21 of the first dielectric layer 21 and the dielectric constant ⁇ 22 of the second dielectric layer 22 is not limited to a specific relationship.
• the dielectric constant ⁇ 21 and the dielectric constant ⁇ 22 are different from each other.
• the dielectric constant ⁇ 21 is higher than the dielectric constant ⁇ 22 .
• the capacitor 1a is likely to have a higher capacitance than when the second dielectric layer 22 is disposed on the substrate 10 in the first portion 15a and the second portion 15b of the porous body 15.
• the substrate 10 has, for example, a porous portion 11 and a core portion 12.
• the porous body 15 includes the porous portion 11.
• the core portion 12 is a non-porous portion.
• the material of the substrate 10 is not limited to a specific material.
• the substrate 10 includes, for example, a valve metal.
• valve metals are Al, Ta, Ti, Hf, Zr, Si, and Nb.
• the second dielectric layer 22 can be easily formed by a method such as anodization.
• the valve metal contained in the substrate 10 may be aluminum.
• the porous portion 11 can be formed, for example, by electrolytic etching of aluminum foil.
• the substrate 10 may be a sintered metal body.
• the substrate 10 is more likely to have the desired porosity, and the capacitor 1a is more likely to have a high capacitance.
• the metal contained in the metal sintered body is not limited to a specific metal.
• the metal sintered body contains, for example, tantalum.
• the pore diameter of the pores in the porous portion 11 is not limited to a specific value. This pore diameter is, for example, 10 nm or more. This makes it easier for the specific surface area of the porous portion 11 to be large, and the capacitor 1a is more likely to have a high capacitance. This pore diameter is, for example, 1 ⁇ m or less. This makes it easier to form the first dielectric layer 21, makes it easier for the first and second portions to be arranged in a desired state, and makes it easier for the capacitor 1a to have a high capacitance.
• the pore diameter of the pores in the porous portion 11 may be 20 nm or more, 30 nm or more, 40 nm or more, or 50 nm or more, and may be 900 nm or less, 800 nm or less, 700 nm or less, 600 nm or less, or 500 nm or less.
• the dimension (depth) D1 of the first portion 15a in the direction perpendicular to the boundary 16 and the dimension (depth) D2 of the second portion 15b in the direction perpendicular to the boundary 16 are not limited to a specific relationship.
• the dimension D1 may be equal to or greater than the dimension D2.
• the volume of the first portion 15a in the volume of the porous body 15 tends to be large, so that when the relative dielectric constant ⁇ 21 is higher than the relative dielectric constant ⁇ 22 , the capacitor 1a tends to have a high capacitance.
• the dimension D1 may be less than the dimension D2.
• the volume of the first portion 15a in the volume of the porous body 15 tends to be small.
• the manufacturing time of the capacitor 1a tends to be short. This is because the time required for film formation by anodization or heat treatment in an oxidizing atmosphere is shorter than the time required for film formation by deposition.
• the conductor 30 is not limited to a specific conductor as long as it is conductive.
• the conductor 30 includes, for example, at least one selected from the group consisting of a conductive polymer, an electrolyte, and manganese oxide. In this case, the capacitor 1a is likely to have high reliability.
• Examples of conductive polymers are polyaniline and polypyrrole.
• the conductor 30 preferably contains at least one selected from the group consisting of an electrolyte and a conductive polymer. In this case, the conductor 30 is more likely to exhibit a self-repair function, and the capacitor 1a is more likely to have high reliability.
• the capacitor 1a includes, for example, a conductive and porous substrate 10, a first dielectric layer 21, and a second dielectric layer 22.
• the method for manufacturing the capacitor 1a includes disposing a conductor 30 in a hole 15p of a porous body 15 having an inwardly extending hole 15p.
• the conductor 30 is disposed in the hole 15p so as to contact the first dielectric layer 21 and the second dielectric layer 22.
• the first dielectric layer 21 is formed by a gas phase method in a first portion 15a on the substrate 10.
• the second dielectric layer 22 is formed by anodization or thermal oxidation in a second portion 15b on the substrate 10.
• the first portion 15a is a portion of the porous body 15 that includes a boundary 16 between the porous body 15 and the outside of the porous body 15.
• the second portion 15b is a portion of the porous body 15 that is located inside the porous body 15 relative to the first portion 15a.
• a first dielectric layer 21 is formed on the first portion 15a of the substrate 10 by a gas phase method.
• the gas phase method is not limited to a specific gas phase method. Examples of the gas phase method are atomic layer deposition (ALD), chemical vapor deposition (CVD), and chemical vapor methods such as mist CVD.
• ALD atomic layer deposition
• CVD chemical vapor deposition
• mist CVD mist CVD
• the desired portion of the substrate 10 is likely to be covered with the first dielectric layer 21.
• the gas phase method is preferably ALD.
• the desired portion of the substrate 10 is likely to be covered with the first dielectric layer 21, and the first dielectric layer 21 is likely to be formed uniformly.
• the gas phase method may be physical vapor deposition such as vacuum deposition.
• step S12 the second dielectric layer 22 is formed on the second portion 15b of the substrate 10 by anodization or thermal oxidation. In this manner, a capacitor member including the substrate 10, the first dielectric layer 21, and the second dielectric layer 22 is obtained.
• the conductor 30 is placed in the hole 15p of the porous body 15 of the capacitor member.
• the conductor 30 includes a conductive polymer
• the conductive polymer may be obtained by carrying out electrolytic polymerization in a state in which a precursor of the conductor 30 is supplied to the hole 15p. For example, in this manner, the capacitor 1a is obtained.
• FIG. 4 is a cross-sectional view showing another example of a capacitor of the present disclosure.
• Capacitor 1b shown in FIG. 4 is configured similarly to capacitor 1a, except for the parts that will be specifically described. Components of capacitor 1b that are the same as or correspond to the components of capacitor 1a are given the same reference numerals, and detailed descriptions are omitted. The description of capacitor 1a also applies to capacitor 1b, unless there is a technical contradiction.
• the substrate 10 includes, for example, two porous portions 11 and a core portion 12.
• the core portion 12 is disposed between the two porous portions 11.
• the substrate 10 may have a cylindrical surface that constitutes the boundary 16, the porous portion 11 may be formed to be located on the cylindrical surface, and the core portion 12 may be surrounded by the porous portion 11.
• the specific surface area of the substrate 10 in contact with the dielectric layer is likely to be large, and the capacitor 1a is more likely to have a high capacitance.
• the dimension (depth) D1 of the first portion 15a in the direction perpendicular to the boundary 16 may be the same or different.
• the dimension (depth) D2 of the second portion 15b in the direction perpendicular to the boundary 16 may be the same or different.
• FIG. 5 is a cross-sectional view showing yet another example of a capacitor of the present disclosure.
• Capacitor 1c shown in FIG. 5 is configured similarly to capacitor 1a, except for the parts that will be specifically described. Components of capacitor 1c that are the same as or correspond to the components of capacitor 1a are given the same reference numerals, and detailed descriptions are omitted. The description of capacitor 1a also applies to capacitor 1c, unless there is a technical contradiction.
• the holes 15p include through holes.
• the specific surface area of the substrate 10 in contact with the dielectric layer tends to be large, and the capacitor 1a tends to have a high capacitance.
• FIG. 6 is a cross-sectional view showing yet another example of a capacitor of the present disclosure.
• Capacitor 1d shown in FIG. 6 is configured similarly to capacitor 1a, except for the parts that will be specifically described. Components of capacitor 1d that are the same as or correspond to the components of capacitor 1a are given the same reference numerals, and detailed descriptions are omitted. The description of capacitor 1a also applies to capacitor 1d, unless there is a technical contradiction.
• the capacitor 1d further includes a third dielectric layer 23.
• the third dielectric layer 23 is disposed on the substrate 10.
• the third dielectric layer 23 is disposed in the first portion 15a of the porous body 15.
• the third dielectric layer 23 is surrounded by the first dielectric layer 21, for example.
• the third dielectric layer 23 includes, for example, an anodized film.
• the third dielectric layer 23 may include an oxide film formed by heat treatment in an oxidizing atmosphere.
• the third dielectric layer 23 is a dielectric layer different from a layer consisting only of a natural oxide film.
• the first dielectric layer 21 when forming the first dielectric layer 21 by a vapor phase process, depending on the conditions of the vapor phase process, it is possible that a portion of the first portion 15a of the substrate 10 may be exposed.
• an oxide film such as an anodic oxide film may also be formed on the portion of the substrate 10 exposed in the first portion 15a when the first dielectric layer 21 is formed.
• a capacitor 1d including a third dielectric layer 23 is obtained.
• the description of the material and thickness of the first dielectric layer 21 can be referred to.
• FIG. 7 is a cross-sectional view of the portion surrounded by rectangle VII in FIG. 6. As shown in FIG. 7, the outer periphery of the third dielectric layer 23 may overlap the first dielectric layer 21. For example, the first dielectric layer 21 may be disposed on the outer periphery of the third dielectric layer 23.
• FIG. 8A is a diagram showing a schematic example of an electric circuit according to the present disclosure.
• the electric circuit 3 includes a capacitor 1a.
• the electric circuit 3 may be an active circuit or a passive circuit.
• the electric circuit 3 may be a discharge circuit, a smoothing circuit, a decoupling circuit, or a coupling circuit. Since the electric circuit 3 includes the capacitor 1a, the electric circuit 3 is likely to exhibit the desired performance. For example, noise is likely to be reduced in the electric circuit 3.
• the electric circuit 3 may include a capacitor 1b, 1c, or 1d.
• FIG. 8B is a schematic diagram showing an example of a circuit board of the present disclosure.
• the circuit board 5 includes a capacitor 1a.
• an electric circuit 3 including the capacitor 1a is formed on the circuit board 5. Since the circuit board 5 includes the capacitor 1a, the circuit board 5 is likely to exhibit the desired performance.
• the circuit board 5 may be an embedded board or a motherboard.
• the circuit board 5 may include a capacitor 1b, 1c, or 1d.
• FIG. 8C is a diagram showing a schematic diagram of an example of a device according to the present disclosure.
• the device 7 includes a capacitor 1a.
• the device 7 includes, for example, a circuit board 5 including the capacitor 1a. Since the device 7 includes the capacitor 1a, the device 7 is likely to exhibit the desired performance.
• the device 7 may be an electronic device, a communication device, a signal processing device, or a power supply device.
• the device 7 may be a server, an AC adapter, an accelerator, or a flat panel display such as a liquid crystal display (LCD).
• the device 7 may be a USB charger, a solid state drive (SSD), an information terminal such as a PC, a smartphone, or a tablet PC, or an Ethernet switch.
• the device 7 may include a capacitor 1b, 1c, or 1d.
• the porous body is A conductive substrate; a first dielectric layer disposed on the substrate; a second dielectric layer disposed on the substrate; the conductor is disposed on the first dielectric layer and the second dielectric layer; the first dielectric layer is disposed in a first portion of the porous body including a boundary between the porous body and an outside of the porous body, the second dielectric layer is disposed in a second portion of the porous body that is located on an inner side of the porous body relative to the first portion, Capacitor.
• the first dielectric layer includes a vapor-deposited film.
• the capacitor according to the first technique is a vapor-deposited film.
• the second dielectric layer includes an anodized film.
• the dielectric constant of the first dielectric layer is higher than the dielectric constant of the second dielectric layer.
• the capacitor according to any one of the first to third aspects.
• the substrate comprises a valve metal.
• the capacitor according to any one of the first to fourth aspects.
• the substrate is a metal sintered body.
• the first dielectric layer comprises a metal compound; the metal compound includes at least one selected from the group consisting of a metal oxide, a metal nitride, and a metal oxynitride; The metal compound includes at least one selected from the group consisting of hafnium, zirconium, aluminum, tantalum, titanium, silicon, and zinc.
• the second dielectric layer comprises an oxide;
• the oxide contains at least one selected from the group consisting of hafnium, zirconium, aluminum, tantalum, titanium, silicon, and niobium.
• the conductor includes at least one selected from the group consisting of a conductive polymer, an electrolyte, and manganese oxide. 11. A capacitor according to any one of claims 1 to 10.
• a porous body including a plurality of holes is A conductive substrate; a first dielectric layer disposed on the substrate; a second dielectric layer disposed on the substrate; the first dielectric layer is disposed in a first portion of the porous body including a boundary between the porous body and an outside of the porous body, the second dielectric layer is disposed in a second portion of the porous body that is located on an inner side of the porous body relative to the first portion; Capacitor components.
• the first dielectric layer is formed by a vapor phase process
• the second dielectric layer is formed by anodization or thermal oxidation.
• Example 1 An Al foil having a thickness of 120 ⁇ m was prepared. The Al foil was subjected to an AC etching process to make the surface porous, and a substrate having a core and a porous portion was obtained. Porous portions having a thickness of 40 ⁇ m were formed on both sides of the Al foil by etching. The most frequent pore size of the pore distribution in the porous portion measured by a mercury intrusion porosimeter was 100 to 200 nm.
• the ZrO2 layer was formed using an atomic layer deposition (ALD) apparatus FlexAL manufactured by Oxford Instruments.
• ALD atomic layer deposition
• FlexAL manufactured by Oxford Instruments.
• the ALD film formation conditions were adjusted as follows. As a result, a ZrO2 layer was formed on the substrate on the surface and near the surface of the porous portion.
• Comparative Example 1 A sample according to Comparative Example 1 was obtained in the same manner as in Example 1, except that no anodization was performed.
• the ZrO 2 layer was arranged on the Al substrate, and the Al substrate was well covered.
• the thickness of the Al 2 O 3 layer on the Al substrate was 1 nm or less, and this Al 2 O 3 is considered to be derived from a natural oxide film.
• the thickness of the ZrO 2 layer near the surface of the porous part and the thickness of the Al 2 O 3 layer in the deep part of the porous part confirmed in the electron microscope photograph of the sample made from the sample according to Comparative Example 1 are shown in Table 1.
• the natural oxide film confirmed in the deep part of the porous part of the sample according to Comparative Example 1 has low insulation properties and is almost the same as the state where Al is exposed. For this reason, it is difficult to form a substantial dielectric layer on the substrate in the deep part of the porous part only by a gas phase method such as ALD, and it is difficult to say that the sample according to Comparative Example 1 has an advantageous structure in terms of voltage resistance and high capacity in a capacitor.
• Example 1 has an advantageous structure in terms of voltage resistance and high capacity when the pores in the porous portion are filled with a conductor to form a capacitor.
• the capacitor disclosed herein can be used, for example, in applications that require high voltage resistance and high capacity.
• Reference Signs List 1a, 1b, 1c, 1d Capacitor 3 Electric circuit 5 Circuit board 7 Device 10 Substrate 11 Porous portion 12 Core portion 15 Porous body 15a First portion 15b Second portion 15p Hole 16 Boundary 21 First dielectric layer 22 Second dielectric layer 23 Third dielectric layer 30 Electric conductor

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