WO2024219218A1 - 半導体装置および車両 - Google Patents

半導体装置および車両 Download PDF

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Publication number
WO2024219218A1
WO2024219218A1 PCT/JP2024/013622 JP2024013622W WO2024219218A1 WO 2024219218 A1 WO2024219218 A1 WO 2024219218A1 JP 2024013622 W JP2024013622 W JP 2024013622W WO 2024219218 A1 WO2024219218 A1 WO 2024219218A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
recesses
thickness direction
conductive member
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/013622
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English (en)
French (fr)
Japanese (ja)
Inventor
禎将 藤定
元 牛尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2025515143A priority Critical patent/JPWO2024219218A1/ja
Publication of WO2024219218A1 publication Critical patent/WO2024219218A1/ja
Priority to US19/355,724 priority patent/US20260060100A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/631—Shapes of strap connectors
    • H10W72/634—Cross-sectional shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/886—Die-attach connectors and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/767—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a laterally-adjacent lead frame, conducting package substrate or heat sink

Definitions

  • This disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device.
  • Patent Document 1 discloses an example of a conventional semiconductor device.
  • the semiconductor device disclosed in the document includes multiple leads, a semiconductor element, multiple conductive members, and a sealing resin.
  • the multiple conductive members include a metal clip and a wire.
  • the metal clip is bonded to an electrode formed on the upper surface of the semiconductor element and to the lead.
  • the wire is bonded to an electrode formed on the upper surface of the semiconductor element and to another lead.
  • the sealing resin covers the semiconductor element and the multiple conductive members.
  • the metal clip is conductively bonded to the electrode on the semiconductor element via a bonding layer. In such a semiconductor device, each part thermally expands and contracts due to heat generated by the semiconductor element.
  • the linear expansion coefficient of the sealing resin is larger than that of the metal clip, the semiconductor element, and the linear expansion coefficient. Due to this difference in linear expansion coefficient, a relatively large stress may act near the periphery of the semiconductor element due to the thermal contraction of the sealing resin. In this case, there is a concern that problems such as peeling of the sealing resin in contact with the metal clip and poor bonding between the metal clip and the bonding layer on the semiconductor element may occur.
  • An object of the present disclosure is to provide a semiconductor device that is an improvement over conventional semiconductor devices.
  • an object of the present disclosure is to provide a semiconductor device that is suitable for improving the adhesion of a conductive member bonded to a semiconductor element with a sealing resin and the bondability of the conductive member with a bonding layer on the semiconductor element side.
  • the semiconductor device provided by the first aspect of the present disclosure includes a first conductive support member having a base, a semiconductor element mounted on one side of the base in the thickness direction and having a first electrode arranged on one side of the thickness direction, a second conductive support member arranged at a distance from the base in a first direction perpendicular to the thickness direction, a first conductive member conductively joined to the first electrode and the second conductive support member, and a sealing resin covering the semiconductor element, the first conductive member, and at least a portion of each of the first conductive support member and the second conductive support member.
  • the first conductive member includes a first portion joined to the first electrode via a first bonding layer having electrical conductivity.
  • the first portion has a first surface facing one side in the thickness direction and a second surface facing the other side in the thickness direction.
  • the first portion is formed with a plurality of first recesses recessed from the first surface and a plurality of second recesses recessed from the second surface.
  • the vehicle provided by the second aspect of the present disclosure is equipped with a power conversion device configured to include a semiconductor device according to the first aspect of the present disclosure.
  • the above configuration makes it possible to improve the adhesion of the conductive member bonded to the semiconductor element with the sealing resin and the bonding with the bonding layer on the semiconductor element side.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 5 is a side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 6 is a front view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII
  • FIG. 9 is a cross-sectional view taken along line IX-IX in FIG.
  • FIG. 10 is a cross-sectional view taken along line XX in FIG.
  • FIG. 11 is a partially enlarged view of a part of FIG.
  • FIG. 12 is a partially enlarged view of a part of FIG.
  • FIG. 13 is a partially enlarged view of a part of FIG.
  • FIG. 14 is a schematic diagram of a vehicle including the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 15 is a partial plan view showing a semiconductor device according to a first modification of the first embodiment.
  • FIG. 16 is a partially enlarged cross-sectional view showing a semiconductor device according to a first modification of the first embodiment, and shows a cross section similar to that of FIG. FIG.
  • FIG. 17 is a partial plan view showing a semiconductor device according to a second modification of the first embodiment.
  • FIG. 18 is a partially enlarged cross-sectional view showing a semiconductor device according to a second modification of the first embodiment, and shows a cross section similar to that of FIG.
  • FIG. 19 is a partial plan view showing a semiconductor device according to a third modification of the first embodiment.
  • FIG. 20 is a partially enlarged cross-sectional view showing a semiconductor device according to a fourth modification of the first embodiment, and shows a cross section similar to that of FIG.
  • FIG. 21 is a partial plan view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 22 is a partially enlarged cross-sectional view showing a semiconductor device according to a second embodiment of the present disclosure, and shows a cross section similar to that of FIG.
  • FIG. 23 is a partial plan view showing a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 25 is a partially enlarged cross-sectional view taken along line XXV-XXV in FIG. 23.
  • an object A is formed on an object B" and “an object A is formed on an object B” include “an object A is formed directly on an object B” and “an object A is formed on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A is disposed on an object B” and “an object A is disposed on an object B” include “an object A is disposed directly on an object B” and “an object A is disposed on an object B with another object interposed between the object A and the object B" unless otherwise specified.
  • an object A is located on an object B includes “an object A is located on an object B in contact with an object B” and “an object A is located on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A overlaps an object B when viewed in a certain direction includes “an object A overlaps the entire object B” and “an object A overlaps a part of an object B.”
  • a surface A faces in direction B is not limited to the case where the angle of surface A with respect to direction B is 90 degrees, but also includes the case where surface A is tilted with respect to direction B.
  • First embodiment 1 to 13 show a semiconductor device according to a first embodiment of the present disclosure.
  • the application of the A10 of this embodiment is not limited in any way, and it is used in electronic devices equipped with a power conversion circuit, such as a DC-DC converter.
  • the semiconductor device A10 includes a first lead 11, a second lead 12, a third lead 13, a fourth lead 14, a semiconductor element 20, a first conductive member 30, a second conductive member 40, a third conductive member 50, and a sealing resin 60.
  • FIG. 1 is a perspective view showing the semiconductor device A10.
  • FIG. 2 is a plan view showing the semiconductor device A10.
  • FIG. 3 is a partial plan view showing the semiconductor device A10.
  • the outer shape of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • FIG. 4 is a bottom view showing the semiconductor device A10.
  • FIG. 5 is a side view showing the semiconductor device A10.
  • FIG. 6 is a front view showing the semiconductor device A10.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3.
  • FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3.
  • FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3.
  • FIG. 11 is a partial enlarged view of a part of FIG. 8.
  • FIG. 12 is a partial enlarged view of a part of FIG. 9.
  • FIG. 13 is a partial enlarged view of a part of FIG. 10.
  • an example of the thickness direction of the present disclosure is the "thickness direction z".
  • An example of a direction perpendicular to the thickness direction z is called the "first direction x”.
  • a direction perpendicular to the thickness direction z and the first direction x is called the "second direction y”.
  • one side of the thickness direction z is an example of the "one side of the thickness direction” of the present disclosure and is called the “z1 side of the thickness direction z”
  • the other side of the thickness direction z is an example of the "other side of the thickness direction” of the present disclosure and is called the "z2 side of the thickness direction z”.
  • An example of one side of the first direction x is the "x1 side of the first direction x", and an example of the other side of the first direction x is the "x2 side of the first direction x".
  • An example of one side of the second direction y is the "y1 side of the second direction y", and an example of the other side of the second direction y is the "y2 side of the second direction y".
  • the first lead 11 as shown in Figures 1 to 4 and 6 to 10, has a base 111 and a terminal portion 112.
  • the first lead 11 is a conductive member on which the semiconductor element 20 is mounted and which forms part of the conductive path between the semiconductor element 20 and a wiring board (not shown) on which the semiconductor device A10 is mounted.
  • the first lead 11 is an example of a "first conductive support member" in this disclosure.
  • the first lead 11 includes, for example, copper (Cu) or a copper alloy.
  • the first lead 11 may also have a surface metal layer (not shown).
  • the surface metal layer includes, for example, Ag (silver), Ni (nickel), etc.
  • the base 111 has a first main surface 111A, a first back surface 111B, and a through hole 111C.
  • the first main surface 111A faces the z1 side in the thickness direction z.
  • the first back surface 111B faces the z2 side in the z direction.
  • the through hole 111C penetrates the base 111 in the thickness direction z.
  • the shape of the through hole 111C is not limited in any way, and in the illustrated example, it is circular when viewed in the thickness direction z.
  • the terminal portion 112 is connected to the base portion 111 and includes a portion extending toward the x1 side in the first direction x.
  • the base portion 111 and the terminal portion 112 are electrically conductive to each other.
  • a portion of the terminal portion 112 is covered with the sealing resin 60.
  • the portion of the terminal portion 112 covered with the sealing resin 60 is bent when viewed in the second direction y.
  • the surface of the portion of the terminal portion 112 exposed from the sealing resin 60 may be plated with, for example, tin (Sn).
  • the second lead 12 is separated from the first lead 11 and is disposed on the y2 side of the second direction y with respect to the terminal portion 112 of the first lead 11.
  • the second lead 12 is disposed on the x1 side of the first direction x with respect to the base portion 111 of the first lead 11.
  • the second lead 12 is electrically connected to the semiconductor element 20 via the first conductive member 30.
  • the second lead 12 is an example of a "second conductive support member" of the present disclosure.
  • the second lead 12 has a pad portion 121 and a terminal portion 122.
  • the pad portion 121 is covered with a sealing resin 60.
  • the pad portion 121 may be plated with, for example, silver (Ag) or tin (Sn).
  • the terminal portion 122 is connected to the pad portion 121. A portion of the terminal portion 122 is covered with the sealing resin 60, and another portion is exposed from the sealing resin 60.
  • the terminal portion 122 extends in the first direction x, for example, parallel to the terminal portion 112.
  • the surface of the terminal portion 122 may be plated with, for example, tin (Sn).
  • the third lead 13 is separated from the first lead 11 and the second lead 12 and is disposed at a distance from the second lead 12 on the y2 side in the second direction y.
  • the third lead 13 is adjacent to the second lead 12 in the second direction y.
  • the third lead 13 is also disposed at a distance from the base 111 on the x1 side in the first direction x.
  • the third lead 13 is electrically connected to the semiconductor element 20 via the second conductive member 40.
  • the third lead 13 is an example of a "third conductive support member" of the present disclosure.
  • the third lead 13 has a pad portion 131 and a terminal portion 132.
  • the pad portion 131 is covered with a sealing resin 60.
  • the pad portion 131 may be plated with, for example, silver (Ag) or tin (Sn).
  • the terminal portion 132 is connected to the pad portion 131.
  • the terminal portion 132 is partially covered by the sealing resin 60, and the other portion is exposed from the sealing resin 60.
  • the terminal portion 132 extends in the first direction x, for example, parallel to the terminal portion 112 and the terminal portion 122.
  • the surface of the terminal portion 132 may be plated with, for example, tin (Sn).
  • the fourth lead 14 is separated from the first lead 11, the second lead 12 and the third lead 13, and is disposed at a distance from the third lead 13 on the y2 side in the second direction y.
  • the fourth lead 14 is located on the opposite side of the second lead 12 from the third lead 13 in the second direction y.
  • the fourth lead 14 is also disposed at a distance from the base 111 on the x1 side in the first direction x.
  • the fourth lead 14 is electrically connected to the semiconductor element 20 via the third conductive member 50.
  • the fourth lead 14 is an example of a "fourth conductive support member" of the present disclosure.
  • the fourth lead 14 has a pad portion 141 and a terminal portion 142.
  • the pad portion 141 is covered with a sealing resin 60.
  • the pad portion 141 may be plated with, for example, silver (Ag) or tin (Sn).
  • the terminal portion 142 is connected to the pad portion 141.
  • the terminal portion 142 is partially covered by the sealing resin 60, and the other portion is exposed from the sealing resin 60.
  • the terminal portion 142 extends in the first direction x, for example, parallel to the terminal portion 112, the terminal portion 122, and the terminal portion 132.
  • the surface of the terminal portion 142 may be plated with, for example, tin (Sn).
  • the semiconductor element 20 is mounted on the first main surface 111A of the base 111, as shown in Figures 3 and 8 to 13.
  • the specific configuration of the semiconductor element 20 is not limited in any way, and in this embodiment, the semiconductor element 20 is a switching element, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) of n-channel type and vertical structure.
  • the semiconductor element 20 is not limited to a MOSFET.
  • the semiconductor element 20 may be other transistors such as an IGBT (Insulated Gate Bipolar Transistor).
  • the semiconductor element 20 may be an LSI (Large Scale Integration) or a diode.
  • the semiconductor element 20 is rectangular when viewed in the thickness direction z.
  • the semiconductor element 20 is disposed in the center of the base 111 in the second direction y.
  • the semiconductor element 20 has a semiconductor layer 25, a first electrode 21, a second electrode 22, and a third electrode 23.
  • the thickness (dimension in the thickness direction z) of the semiconductor element 20 is not particularly limited, and is, for example, about 100 ⁇ m or more and 1000 ⁇ m or less.
  • the semiconductor layer 25 includes a compound semiconductor substrate.
  • the main material of the compound semiconductor substrate is silicon carbide (SiC).
  • silicon (Si) may be used as the main material of the compound semiconductor substrate.
  • the first electrode 21 is disposed on the z1 side of the semiconductor layer 25 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 20 flows through the first electrode 21.
  • the first electrode 21 is a source electrode.
  • the second electrode 22 is disposed on the z1 side of the semiconductor layer 25 in the thickness direction z.
  • the second electrode 22 is located away from the first electrode 21.
  • a voltage is applied to the second electrode 22 to drive the semiconductor element 20.
  • the second electrode 22 is a gate electrode.
  • the area of the second electrode 22 is smaller than the area of the first electrode 21 when viewed in the thickness direction z.
  • the second electrode 22 is disposed on the y2 side of the second direction y of the semiconductor element 20 in the thickness direction z, and in the center in the first direction x.
  • the first electrode 21 is provided on most of the z1 side of the semiconductor layer 25 in the thickness direction z, except for the portion where the second electrode 22 is disposed.
  • the third electrode 23 is disposed on the portion of the semiconductor layer 25 on the z2 side in the thickness direction z.
  • the third electrode 23 faces the first main surface 111A of the base 111 of the first lead 11.
  • a current corresponding to the power before being converted by the semiconductor element 20 flows through the third electrode 23.
  • the third electrode 23 is a drain electrode.
  • the third electrode 23 is conductively joined to the first main surface 111A via a joining layer 29.
  • the joining layer 29 is made of a conductive material, such as solder or Ag (silver) paste.
  • the first lead 11 is electrically connected to the third electrode 23 of the semiconductor element 20.
  • the terminal portion 112 is the drain terminal of the semiconductor device A10.
  • the second lead 12 is electrically connected to the first electrode 21 of the semiconductor element 20.
  • the terminal portion 122 is the source terminal of the semiconductor device A10.
  • the third lead 13 is electrically connected to the first electrode 21 of the semiconductor element 20.
  • the terminal portion 132 is the source sense terminal of the semiconductor device A10.
  • the fourth lead 14 is electrically connected to the second electrode 22 of the semiconductor element 20.
  • the terminal portion 142 is the gate terminal of the semiconductor device A10.
  • the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 121 of the second lead 12.
  • the first conductive member 30 is, for example, made of a metal plate material.
  • the constituent material of the first conductive member 30 includes, for example, Cu (copper).
  • the first conductive member 30 is a metal plate material that is appropriately bent.
  • the first conductive member 30 is a fixed-length Cu clip (metal clip).
  • the first conductive member 30 extends with the first direction x as its longitudinal direction.
  • the first conductive member 30 has a pair of side surfaces 30A, 30B.
  • the side surfaces 30A, 30B face in a direction perpendicular to the thickness direction z, and in this embodiment, face in the second direction y.
  • the side surface 30A faces the y2 side of the second direction y
  • the side surface 30B faces the y1 side of the second direction y.
  • the thickness of the first conductive member 30 is not particularly limited, and is, for example, approximately 150 ⁇ m or more and 250 ⁇ m or less.
  • the first conductive member 30 has a first portion 31, a second portion 32, and a first intermediate portion 33.
  • the first portion 31 is joined to the first electrode 21 via the first bonding layer 38, and is a portion that conductively bonds the first conductive member 30 to the first electrode 21.
  • the first bonding layer 38 is made of a conductive material, such as solder or Ag (silver) paste.
  • the first portion 31 is located at the end of the first conductive member 30 on the x2 side in the first direction x.
  • the first portion 31 is rectangular when viewed in the thickness direction z.
  • the first portion 31 has a first surface 311 and a second surface 312.
  • the first surface 311 faces the z1 side in the thickness direction z.
  • the second surface 312 faces the z2 side in the thickness direction z.
  • the first portion 31 has a plurality of first recesses 311a and a plurality of second recesses 312a formed therein.
  • the first recesses 311a are recessed from the first surface 311 toward the z2 side in the thickness direction z.
  • the first recesses 311a are formed of grooves arranged along a direction perpendicular to the thickness direction z, and each of the grooves extends linearly.
  • the first recesses 311a are arranged along the first direction x, and each of the first recesses 311a extends linearly in the second direction y.
  • the first recesses 311a are arranged continuously in the first direction x without any gaps between them as viewed in the second direction y.
  • the first recesses 311a are formed, for example, by press processing.
  • the arrangement direction of the first recesses 311a is not limited to the illustrated example, and may be, for example, a configuration in which the first recesses 311a are arranged along the second direction y, and each of the first recesses 311a extends in the first direction x.
  • the method of forming the first recesses 311a is not limited to the above press processing, and may be, for example, laser processing, chemical processing (e.g., etching), etc.
  • the depth (dimension in the thickness direction z) of the first recesses 311a can be set appropriately, and the method of forming the first recesses 311a can be selected appropriately according to the depth of the first recesses 311a.
  • the first recesses 311a are formed on almost the entire first surface 311, but the first recesses 311a may be formed on a part of the first surface 311.
  • each first recess 311a has a triangular cross-sectional shape, and the first surface 311 is saw-tooth shaped, but the cross-sectional shape of the first recesses 311a is not limited to this.
  • the first recesses 311a are not limited to a configuration of multiple grooves, and may be, for example, a configuration in which the first recesses 311a are separated from each other and scattered in the thickness direction z.
  • the multiple second recesses 312a are recessed from the second surface 312 toward the z1 side in the thickness direction z.
  • the multiple second recesses 312a are composed of multiple grooves arranged along a direction perpendicular to the thickness direction z, and each of the multiple grooves extends linearly.
  • the multiple second recesses 312a are arranged along the first direction x, and each second recess 312a extends linearly in the second direction y.
  • the multiple second recesses 312a are arranged continuously in the first direction x with no gaps between them as seen in the second direction y.
  • the shape and size of the multiple second recesses 312a are similar to those of the multiple first recesses 311a described above.
  • the multiple second recesses 312a are formed, for example, by press processing.
  • the arrangement direction of the plurality of second recesses 312a is not limited to the illustrated example, and may be, for example, a configuration in which the plurality of second recesses 312a are arranged along the second direction y and each second recess 312a extends in the first direction x.
  • the method of forming the plurality of second recesses 312a is not limited to the above press processing, and may be, for example, laser processing, chemical processing (e.g., etching), or the like.
  • the depth (dimension in the thickness direction z) of the second recesses 312a can be set appropriately, and the method of forming the second recesses 312a can be appropriately selected according to the depth of the second recesses 312a.
  • the plurality of second recesses 312a are formed on almost the entire second surface 312, but the plurality of second recesses 312a may be formed on a part of the second surface 312.
  • each second recess 312a has a triangular cross-sectional shape, and the second surface 312 has a sawtooth shape, but the cross-sectional shape of the second recesses 312a is not limited to this.
  • the multiple second recesses 312a are not limited to being configured with multiple grooves, and may be configured, for example, such that the multiple second recesses 312a are separated from one another and scattered when viewed in the thickness direction z.
  • the second portion 32 is joined to the pad portion 121 of the second lead 12 via the second bonding layer 39, and is the portion that conductively bonds the first conductive member 30 to the second lead 12.
  • the second bonding layer 39 is made of a conductive material, such as solder or Ag (silver) paste.
  • the second portion 32 is located at the end of the first conductive member 30 on the x1 side in the first direction x.
  • the second portion 32 is rectangular when viewed in the thickness direction z.
  • the second portion 32 has a third surface 321 and a fourth surface 322.
  • the third surface 321 faces the z1 side in the thickness direction z.
  • the fourth surface 322 faces the z2 side in the thickness direction z.
  • the first intermediate portion 33 is located between the first portion 31 and the second portion 32 when viewed in the thickness direction z.
  • the first intermediate portion 33 is connected to the first portion 31 and the second portion 32.
  • the first intermediate portion 33 is rectangular when viewed in the thickness direction z.
  • the portions of the first intermediate portion 33 that connect to the first portion 31 and the second portion 32 are bent when viewed in the second direction y.
  • the portions of the first intermediate portion 33 other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z of the first portion 31 and the second portion 32.
  • the first intermediate portion 33 has a fifth surface 331 and a sixth surface 332.
  • the fifth surface 331 is located on the z1 side in the thickness direction z.
  • the sixth surface 332 is located on the z2 side in the thickness direction z.
  • the second conductive member 40 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 131 of the third lead 13.
  • the second conductive member 40 is a bonding wire.
  • the specific configuration of the second conductive member 40 is not limited in any way, and includes a cross-sectional shape that is circular, elliptical, flattened rectangular, etc. In the illustrated example, the second conductive member 40 has a circular cross-sectional shape.
  • the second conductive member 40 is joined by wedge bonding, for example.
  • the material of the second conductive member 40 is not limited in any way, and includes, for example, Cu (copper), Al (aluminum), etc.
  • the third conductive member 50 is conductively joined to the second electrode 22 of the semiconductor element 20 and the pad portion 141 of the fourth lead 14.
  • the third conductive member 50 is a bonding wire.
  • the specific configuration of the third conductive member 50 is not limited in any way, and includes a cross-sectional shape that is circular, elliptical, flattened rectangular, etc. In the illustrated example, the third conductive member 50 has a circular cross-sectional shape.
  • the third conductive member 50 is joined by wedge bonding, for example.
  • the material of the third conductive member 50 is not limited in any way, and includes, for example, Cu (copper), Al (aluminum), etc.
  • the joining of the semiconductor element 20 to the base 111 via the above-mentioned bonding layer 29, and the joining of the first conductive member 30 to the first electrode 21 and the second lead 12 (pad portion 121) via the first bonding layer 38 and the second bonding layer 39 are performed all at once, for example, by a solder reflow process. Then, after the first conductive member 30 is joined, the second conductive member 40 and the third conductive member 50 are bonded.
  • the sealing resin 60 covers the semiconductor element 20, the first conductive member 30, the second conductive member 40, the third conductive member 50, and parts of each of the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14.
  • the sealing resin 60 has electrical insulation properties.
  • the sealing resin 60 is made of a material that contains, for example, black epoxy resin.
  • the sealing resin 60 has a resin main surface 61, a resin back surface 62, a pair of first resin side surfaces 63, a pair of second resin side surfaces 64, a pair of openings 65, a mounting hole 66, and a recess 67.
  • the resin main surface 61 faces the z1 side in the thickness direction z.
  • the resin back surface 62 faces the z2 side in the thickness direction z.
  • the first back surface 111B of the base 111 is exposed from the resin back surface 62.
  • the first back surface 111B and the resin back surface 62 are flush with each other.
  • the pair of first resin side surfaces 63 are positioned apart from each other in the first direction x.
  • the pair of first resin side surfaces 63 are connected to the resin main surface 61 and the resin back surface 62.
  • the terminal portion 112 of the first lead 11, the terminal portion 122 of the second lead 12, the terminal portion 132 of the third lead 13, and the terminal portion 142 of the fourth lead 14 protrude from the first resin side surface 63 facing the x1 side of the first direction x.
  • the pair of second resin side surfaces 64 are spaced apart from each other in the second direction y.
  • the pair of second resin side surfaces 64 are connected to the resin main surface 61 and the resin back surface 62.
  • the pair of openings 65 are positioned apart from each other in the second direction y. Each of the pair of openings 65 is recessed inwardly into the sealing resin 60 from the resin main surface 61 and one of the pair of second resin side surfaces 64. A portion of the first main surface 111A of the base 111 of the first lead 11 is exposed from the pair of openings 65.
  • the mounting hole 66 penetrates the sealing resin 60 from the resin main surface 61 to the resin back surface 62 in the thickness direction z.
  • the mounting hole 66 is contained within the through hole 111C of the base 111 of the first lead 11.
  • the inner surface of the base 111 that defines the through hole 111C is covered by the sealing resin 60.
  • the maximum dimension of the mounting hole 66 is smaller than the dimension of the through hole 111C.
  • the recess 67 is located between the terminal portion 112 and the terminal portion 122 in the second direction y.
  • the recess 67 is recessed from the first resin side surface 63 located on the x1 side in the first direction x to the x2 side in the first direction x.
  • FIG. 14 is a schematic diagram of a vehicle B1 equipped with the semiconductor device A10.
  • the vehicle B1 is, for example, an electric vehicle (EV).
  • EV electric vehicle
  • the vehicle B1 is equipped with a drive system 84 including an AC-DC converter 81, a power receiving device 82, and a storage battery 83.
  • the semiconductor device A10 constitutes a part of the AC-DC converter 81.
  • the AC-DC converter 81 converts the AC power into high-voltage DC power.
  • the AC-DC converter 81 supplies the high-voltage DC power to the storage battery 83.
  • the power receiving device 82 supplies power to the storage battery 83 through a non-contact charging system, and is supplied with power by electromagnetic induction from a non-contact charger (not shown) installed in a parking lot or the like.
  • the power stored in the storage battery 83 is supplied to the drive system 84, which is composed of an inverter, an AC motor, and a transmission.
  • the drive system 84 drives the vehicle B1.
  • the AC-DC converter 81 is an example of the "power conversion device" of this disclosure.
  • the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12.
  • the first conductive member 30 includes a first portion 31, which is joined to the first electrode 21 via a first bonding layer 38 having electrical conductivity.
  • the first portion 31 has a first surface 311 facing the z1 side of the thickness direction z and a second surface 312 facing the z2 side of the thickness direction z.
  • the first portion 31 is formed with a plurality of first recesses 311a recessed from the first surface 311 and a plurality of second recesses 312a recessed from the second surface 312.
  • the first surface 311 is formed with an uneven shape by the plurality of first recesses 311a formed in the first portion 31.
  • the first surface 311 is in contact with the sealing resin 60. Therefore, the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect.
  • the second surface 312 has an uneven shape due to the multiple second recesses 312a formed in the first portion 31.
  • the second surface 312 is in contact with the first bonding layer 38. Therefore, the adhesion between the first portion 31 (first conductive member 30) and the first bonding layer 38 can be improved by the anchor effect. This improves the reliability of the semiconductor device A10.
  • the first recesses 311a are formed of grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly.
  • the second recesses 312a are formed of grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. This configuration enhances the anchor effect due to the uneven shape of the first surface 311 and the uneven shape of the second surface 312. This is therefore more preferable in terms of improving the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 and the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38.
  • the multiple first recesses 311a formed on the first surface 311 are configured as multiple grooves arranged along the first direction x, so that the surface area of the first surface 311 can be efficiently increased. This makes it possible to improve the heat dissipation from the surface of the first conductive member 30.
  • FIGS. 15 to 25 show modified examples and other embodiments of the present disclosure.
  • elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and redundant explanations will be omitted.
  • the configurations of each part in each modified example and each embodiment can be combined with each other as appropriate to the extent that no technical contradictions arise.
  • FIG. 15 and 16 show a first modified example of the semiconductor device A10.
  • FIG. 15 is a partial plan view showing the semiconductor device A11 according to the first modified example.
  • FIG. 16 is a partially enlarged cross-sectional view showing the semiconductor device A11, and shows the same cross-section as FIG. 11.
  • the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • the configuration of the first conductive member 30 is different from that of the first conductive member 30 of the semiconductor device A10.
  • the second portion 32 of the first conductive member 30 is formed with a plurality of third recesses 321a and a plurality of fourth recesses 322a.
  • the plurality of third recesses 321a are recessed from the third surface 321 toward the z2 side in the thickness direction z.
  • the plurality of third recesses 321a are arranged along the first direction x, and each of the third recesses 321a extends linearly in the second direction y.
  • the plurality of fourth surfaces 322 are recessed from the fourth surface 322 toward the z1 side in the thickness direction z.
  • the plurality of fourth recesses 322a are arranged along the first direction x, and each of the fourth recesses 322a extends linearly in the second direction y.
  • the plurality of third recesses 321a have the same configuration as the plurality of first recesses 311a, and the plurality of fourth recesses 322a have the same configuration as the plurality of second recesses 312a.
  • the first surface 311 is made uneven by a plurality of first recesses 311a formed in the first portion 31.
  • the first surface 311 is in contact with the sealing resin 60. Therefore, the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect.
  • the second surface 312 is made uneven by a plurality of second recesses 312a formed in the first portion 31.
  • the second surface 312 is in contact with the first bonding layer 38. Therefore, the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38 can be improved by the anchor effect. This improves the reliability of the semiconductor device A11.
  • the first recesses 311a are formed of grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly.
  • the second recesses 312a are formed of grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. This configuration enhances the anchor effect due to the uneven shape of the first surface 311 and the uneven shape of the second surface 312, and is more preferable in terms of improving the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 and the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38.
  • the multiple first recesses 311a formed on the first surface 311 are configured as multiple grooves arranged along the first direction x, so that the surface area of the first surface 311 can be efficiently increased. This makes it possible to improve the heat dissipation from the surface of the first conductive member 30.
  • the second portion 32 of the first conductive member 30 is further provided with a plurality of first recesses 311a recessed from the third surface 321 and a plurality of second recesses 312a recessed from the second surface 312.
  • the third surface 321 is provided with an uneven shape by the plurality of third recesses 321a formed in the second portion 32.
  • the third surface 321 is in contact with the sealing resin 60. Therefore, the adhesion between the second portion 32 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect.
  • the fourth surface 322 is provided with an uneven shape by the plurality of fourth recesses 322a formed in the second portion 32.
  • the fourth surface 322 is in contact with the second bonding layer 39. Therefore, the bonding between the second portion 32 (first conductive member 30) and the second bonding layer 39 can be improved by the anchor effect. This further improves the reliability of the semiconductor device A11.
  • the third recesses 321a are formed of grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly.
  • the fourth recesses 322a are formed of grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. This configuration enhances the anchor effect due to the uneven shape of the third surface 321 and the uneven shape of the fourth surface 322. This is therefore more preferable in terms of improving the adhesion between the second part 32 (first conductive member 30) and the sealing resin 60 and the bonding between the second part 32 (first conductive member 30) and the second bonding layer 39.
  • the third recesses 321a formed on the third surface 321 are composed of grooves arranged along the first direction x, so that the surface area of the third surface 321 can be efficiently increased. This makes it possible to further improve the heat dissipation from the surface of the first conductive member 30.
  • FIG. 17 and 18 show a second modified example of the semiconductor device A10.
  • Fig. 17 is a partial plan view showing a semiconductor device A12 according to the second modified example.
  • Fig. 18 is a partially enlarged cross-sectional view showing the semiconductor device A12, and shows the same cross-section as Fig. 11.
  • the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • the semiconductor device A12 of this modified example differs from the semiconductor devices A10 and A11 in the configuration of the first conductive member 30.
  • the configuration of the first intermediate portion 33 in the first conductive member 30 is different from that of the semiconductor device A11.
  • the first intermediate portion 33 is formed with a plurality of fifth recesses 331a and a plurality of sixth recesses 332a.
  • the plurality of fifth recesses 331a are recessed from the fifth surface 331.
  • the plurality of third recesses 321a are arranged along the first direction x, and each of the third recesses 321a extends linearly in the second direction y.
  • the plurality of fourth surfaces 322 are recessed from the fourth surface 322.
  • the plurality of sixth recesses 332a are arranged along the first direction x, and each of the sixth recesses 332a extends linearly in the second direction y.
  • the plurality of fifth recesses 331a have the same configuration as the plurality of first recesses 311a, and the plurality of sixth recesses 332a have the same configuration as the plurality of second recesses 312a.
  • the first surface 311 is made uneven by a plurality of first recesses 311a formed in the first portion 31.
  • the first surface 311 is in contact with the sealing resin 60. Therefore, the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect.
  • the second surface 312 is made uneven by a plurality of second recesses 312a formed in the first portion 31.
  • the second surface 312 is in contact with the first bonding layer 38. Therefore, the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38 can be improved by the anchor effect. This improves the reliability of the semiconductor device A12.
  • the semiconductor device A12 has the same effects as the semiconductor device A11 described above.
  • the first intermediate portion 33 of the first conductive member 30 is formed with a plurality of fifth recesses 331a recessed from the fifth surface 331 and a plurality of sixth recesses 332a recessed from the sixth surface 332.
  • the fifth surface 331 and the sixth surface 332 are made uneven by the plurality of fifth recesses 331a and the plurality of sixth recesses 332a formed in the second portion 32.
  • the fifth surface 331 and the sixth surface 332 are in contact with the sealing resin 60. Therefore, the adhesion between the first intermediate portion 33 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect. This further improves the reliability of the semiconductor device A12.
  • the fifth recesses 331a are formed of grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly.
  • the sixth recesses 332a are formed of grooves arranged along a first direction x perpendicular to the thickness direction z, and each of the grooves extends linearly. This configuration enhances the anchor effect due to the uneven shape of the fifth surface 331 and the uneven shape of the sixth surface 332. This is therefore more preferable in terms of improving the adhesion between the second portion 32 (first conductive member 30) and the sealing resin 60.
  • the third recesses 321a formed on the third surface 321 are composed of grooves arranged along the first direction x, so that the surface area of the third surface 321 can be efficiently increased. This makes it possible to further improve the heat dissipation from the surface of the first conductive member 30.
  • Fig. 19 shows a third modified example of the semiconductor device A10.
  • Fig. 19 is a partial plan view showing a semiconductor device A13 according to the third modified example.
  • the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • the semiconductor device A13 of this modified example differs from the semiconductor device A12 described above in the configuration of the first conductive member 30.
  • a plurality of seventh recesses 301 are formed in the first conductive member 30.
  • the plurality of seventh recesses 301 are recessed from the side surfaces 30A and 30B of the first conductive member 30.
  • the first conductive member 30 is formed with a plurality of seventh recesses 301 recessed from the side surface 30A toward the y1 side in the second direction y, and a plurality of seventh recesses 301 recessed from the side surface 30B toward the y2 side in the second direction y.
  • the plurality of seventh recesses 301 are formed of a plurality of grooves arranged along the first direction x.
  • the first surface 311 is made uneven by the multiple first recesses 311a formed in the first portion 31.
  • the first surface 311 is in contact with the sealing resin 60. Therefore, the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect.
  • the second surface 312 is made uneven by the multiple second recesses 312a formed in the first portion 31.
  • the second surface 312 is in contact with the first bonding layer 38. Therefore, the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38 can be improved by the anchor effect. This improves the reliability of the semiconductor device A13.
  • the semiconductor device A13 has the same effects as the semiconductor device A12 described above.
  • the first conductive member 30 further has a plurality of seventh recesses 301 recessed from the side surfaces 30A and 30B.
  • the plurality of seventh recesses 301 formed in the first conductive member 30 give the side surfaces 30A and 30B an uneven shape.
  • the side surfaces 30A and 30B are in contact with the sealing resin 60. Therefore, the adhesion between the first conductive member 30 and the sealing resin 60 can be further improved by the anchor effect. This further improves the reliability of the semiconductor device A13.
  • Fig. 20 shows a fourth modified example of the semiconductor device A10.
  • Fig. 20 is a partially enlarged cross-sectional view showing a semiconductor device A14 according to the fourth modified example, and shows a cross section similar to that of Fig. 11.
  • the semiconductor device A14 of this modified example differs from the semiconductor device A10 in the configuration of the first conductive member 30.
  • the configuration of the multiple second recesses 312a formed in the first portion 31 of the first conductive member 30 differs from that of the semiconductor device A10.
  • the multiple second recesses 312a each have a trapezoidal cross-sectional shape, and are arranged in the first direction x at intervals when viewed in the second direction y.
  • the second surface 312 is adjacent to the first electrode 21 with a small gap therebetween, or abuts against the first electrode 21.
  • the first surface 311 is made uneven by the multiple first recesses 311a formed in the first portion 31.
  • the first surface 311 is in contact with the sealing resin 60. Therefore, the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect.
  • the second surface 312 is made uneven by the multiple second recesses 312a formed in the first portion 31.
  • the second surface 312 is in contact with the first bonding layer 38. Therefore, the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38 can be improved by the anchor effect. This improves the reliability of the semiconductor device A14.
  • the semiconductor device A14 has the same effects as the semiconductor device A10 described above.
  • FIG. 21 and 22 show a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 21 is a partial plan view showing a semiconductor device A20 according to this embodiment.
  • FIG. 22 is a partially enlarged cross-sectional view showing the semiconductor device A20, and shows a cross-section similar to that of FIG. 11.
  • the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • the semiconductor device A20 of this embodiment differs from the semiconductor device A10 described above in the configuration of the first conductive member 30 and the arrangement of the second conductive member 40.
  • the second conductive member 40 is conductively joined to the first portion 31 of the first conductive member 30 and the pad portion 131 of the third lead 13.
  • the second conductive member 40 is conductive to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first portion 31).
  • the first recess 311a is not formed in the central portion in the first direction x and the second direction y as viewed in the thickness direction z.
  • the second conductive member 40 is joined to the portion of the first surface 311 where the first recess 311a is not formed (the central portion in the first direction x and the second direction y).
  • the multiple first recesses 311a surround the joint portion between the first portion 31 and the second conductive member 40 as viewed in the thickness direction z.
  • the multiple first recesses 311a form a ring shape surrounding the joint between the first portion 31 and the second conductive member 40 when viewed in the thickness direction z.
  • the first portion 31 is U-shaped when viewed in the thickness direction z.
  • the first portion 31 is also provided on both sides of the second electrode 22 in the first direction x when viewed in the thickness direction z, and overlaps most of the first electrode 21 when viewed in the thickness direction z.
  • a plurality of first recesses 311a are also formed in the first portion 31 on both sides of the second electrode 22 in the first direction x when viewed in the thickness direction z.
  • the first surface 311 is made uneven by the multiple first recesses 311a formed in the first portion 31.
  • the first surface 311 is in contact with the sealing resin 60. Therefore, the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect.
  • the second surface 312 is made uneven by the multiple second recesses 312a formed in the first portion 31.
  • the second surface 312 is in contact with the first bonding layer 38. Therefore, the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38 can be improved by the anchor effect. This improves the reliability of the semiconductor device A20.
  • the semiconductor device A20 has the same effects as the semiconductor device A10.
  • the second conductive member 40 is conductively joined to the first portion 31 (first conductive member 30) and the third lead 13.
  • the second conductive member 40 is conductive to the first electrode 21 via the first conductive member 30.
  • the anchor effect of the multiple first recesses 311a and the multiple second recesses 312a is further enhanced, which is more preferable in terms of improving the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 and the bondability between the first portion 31 (first conductive member 30) and the first bonding layer 38.
  • FIG. 23 to 25 show a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 23 is a partial plan view showing a semiconductor device A30 according to this embodiment.
  • FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 23.
  • FIG. 25 is a partially enlarged cross-sectional view taken along line XXV-XXV in FIG. 23.
  • the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • the semiconductor device A30 of this embodiment differs from the semiconductor device A10 described above in the configurations of the first conductive member 30 and the second conductive member 40.
  • the second conductive member 40 is conductively joined to the first portion 31 of the first conductive member 30 and the pad portion 131 of the third lead 13.
  • the second conductive member 40 is made of, for example, a metal plate material.
  • the constituent material of the second conductive member 40 includes, for example, Cu (copper).
  • the second conductive member 40 is a metal plate material that is appropriately bent.
  • the second conductive member 40 has a third portion 41, a fourth portion 42, and a second intermediate portion 43.
  • the third portion 41 is joined to the first portion 31 of the first conductive member 30 via a joining layer 49.
  • the joining layer 49 is made of a conductive material, such as solder or Ag (silver) paste.
  • the third portion 41 is electrically connected to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first portion 31).
  • the third portion 41 is located at the end of the second conductive member 40 on the x2 side in the first direction x.
  • the fourth portion 42 is joined to the pad portion 131 of the third lead 13 via a joining layer 49, and is a portion that electrically connects the second conductive member 40 to the third lead 13.
  • the joining layer 49 is made of a conductive material, such as solder or Ag (silver) paste.
  • the fourth portion 42 is located at the end of the second conductive member 40 on the x1 side in the first direction x.
  • the second intermediate portion 43 is located between the third portion 41 and the fourth portion 42 when viewed in the thickness direction z.
  • the second intermediate portion 43 is connected to the third portion 41 and the fourth portion 42.
  • the portions of the second intermediate portion 43 that are connected to the third portion 41 and the fourth portion 42 are bent when viewed in the second direction y.
  • the portions of the second intermediate portion 43 other than the bent portions are along the xy plane and are located on the z1 side of the thickness direction z relative to the third portion 41 and the fourth portion 42.
  • the portions of the second intermediate portion 43 other than the bent portions are located on the y2 side of the second direction y as they move toward the x1 side of the first direction x, and extend in a direction intersecting the first direction x and the second direction y.
  • first recess 311a On the first surface 311 of the first conductive member 30 (first portion 31), no first recess 311a is formed on the x1 side in the first direction x and in the center in the second direction y when viewed in the thickness direction z.
  • the third portion 41 (second conductive member 40) is joined to a portion of the first surface 311 where no first recess 311a is formed.
  • the multiple first recesses 311a surround the joint between the first portion 31 and the second conductive member 40 when viewed in the thickness direction z.
  • the first portion 31 is U-shaped when viewed in the thickness direction z.
  • the first portion 31 is also provided on both sides of the second electrode 22 in the first direction x when viewed in the thickness direction z, and overlaps most of the first electrode 21 when viewed in the thickness direction z.
  • a plurality of first recesses 311a are also formed in the first portion 31 on both sides of the second electrode 22 in the first direction x when viewed in the thickness direction z.
  • the first surface 311 is made uneven by a plurality of first recesses 311a formed in the first portion 31.
  • the first surface 311 is in contact with the sealing resin 60. Therefore, the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 can be improved by the anchor effect.
  • the second surface 312 is made uneven by a plurality of second recesses 312a formed in the first portion 31.
  • the second surface 312 is in contact with the first bonding layer 38. Therefore, the bonding between the first portion 31 (first conductive member 30) and the first bonding layer 38 can be improved by the anchor effect. This improves the reliability of the semiconductor device A30.
  • the semiconductor device A30 has the same effects as the semiconductor device A10.
  • the second conductive member 40 is conductively joined to the first portion 31 (first conductive member 30) and the third lead 13.
  • the second conductive member 40 is conductively joined to the first electrode 21 via the first conductive member 30.
  • the anchor effect of the multiple first recesses 311a and the multiple second recesses 312a is further enhanced, which is more preferable in terms of improving the adhesion between the first portion 31 (first conductive member 30) and the sealing resin 60 and the bondability between the first portion 31 (first conductive member 30) and the first bonding layer 38.
  • the semiconductor device according to the present disclosure is not limited to the above-mentioned embodiment.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.
  • a discrete package is described as having a lead (first lead 11) as the first conductive support member, and one semiconductor element 20 is mounted on the base 111 of the first lead 11, but the present disclosure is not limited to this.
  • the semiconductor element may be a plurality of power semiconductor chips, and the plurality of power semiconductor chips may be mounted on a copper plate or a Direct Bonded Copper (DBC) substrate.
  • DBC Direct Bonded Copper
  • the metal layer of the copper plate or DBC substrate corresponds to the first conductive support member of the present disclosure.
  • Appendix 1 a first conductive support member having a base; a semiconductor element mounted on one side in a thickness direction of the base and having a first electrode disposed on the one side in the thickness direction; A second conductive support member disposed apart from the base in a first direction perpendicular to the thickness direction; a first conductive member conductively joined to the first electrode and the second conductive support member; a sealing resin that covers the semiconductor element, the first conductive member, and at least a portion of each of the first conductive support member and the second conductive support member; the first conductive member includes a first portion bonded to the first electrode via a first bonding layer having electrical conductivity; The first portion has a first surface facing one side in the thickness direction and a second surface facing the other side in the thickness direction, The first portion is formed with a plurality of first recesses recessed from the first surface and a plurality of second recesses recessed from the second surface.
  • Appendix 2 The semiconductor device according to claim 1, wherein the first recesses and the second recesses are arranged along a direction perpendicular to the thickness direction and each of the first recesses and the second recesses is composed of a plurality of grooves extending linearly.
  • the first conductive member includes a second portion bonded to the second conductive support member via a second bonding layer having electrical conductivity; The second portion has a third surface facing one side in the thickness direction and a fourth surface facing the other side in the thickness direction, 3.
  • Appendix 4. 4 4.
  • the semiconductor device wherein the third recesses and the fourth recesses are arranged in a direction perpendicular to the thickness direction and each of the third recesses and the fourth recesses is composed of a plurality of grooves extending linearly.
  • the first conductive member includes a first intermediate portion located between the first portion and the second portion as viewed in the thickness direction and connected to the first portion and the second portion, The first intermediate portion has a fifth surface located on one side in the thickness direction and a sixth surface located on the other side in the thickness direction,
  • the semiconductor device according to claim 3 or 4, wherein the first intermediate portion has a plurality of fifth recesses recessed from the fifth surface and a plurality of sixth recesses recessed from the sixth surface. Appendix 6.
  • the first conductive member has a side surface facing a direction perpendicular to the thickness direction, 6.
  • Appendix 7. The semiconductor device according to claim 1, wherein the first conductive member extends with the first direction as a longitudinal direction.
  • Appendix 8. The semiconductor device according to any one of claims 1 to 7, wherein the first conductive member is made of a metal plate. Appendix 9. 9.
  • a constituent material of the first conductive member includes copper.
  • Appendix 10. a third conductive support member disposed apart from the base and the second conductive support member, and a second conductive member; 10.
  • the semiconductor element is a bonding wire.
  • Appendix 16 a fourth conductive support member and a third conductive member disposed apart from the base in the first direction, the semiconductor element has a second electrode disposed on one side in the thickness direction; the fourth conductive support member is disposed spaced apart from the third conductive support member in the thickness direction and in a second direction perpendicular to the first direction, 16.
  • the semiconductor device according to claim 10 wherein the third conductive member is conductively joined to the second electrode and the fourth conductive support member.
  • Appendix 17. the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode; the first electrode is the source electrode; the second electrode is the gate electrode, 17.
  • Appendix 18. A vehicle comprising a power conversion device configured to include the semiconductor device according to claim 17.

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020075549A1 (ja) * 2018-10-09 2020-04-16 ローム株式会社 半導体装置および半導体装置の製造方法
JP2021141172A (ja) * 2020-03-04 2021-09-16 株式会社デンソー 半導体装置
JP2021158180A (ja) * 2020-03-26 2021-10-07 ローム株式会社 半導体装置
JP2022161500A (ja) * 2021-04-09 2022-10-21 ローム株式会社 半導体装置、および半導体装置の製造方法
WO2023021938A1 (ja) * 2021-08-18 2023-02-23 ローム株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020075549A1 (ja) * 2018-10-09 2020-04-16 ローム株式会社 半導体装置および半導体装置の製造方法
JP2021141172A (ja) * 2020-03-04 2021-09-16 株式会社デンソー 半導体装置
JP2021158180A (ja) * 2020-03-26 2021-10-07 ローム株式会社 半導体装置
JP2022161500A (ja) * 2021-04-09 2022-10-21 ローム株式会社 半導体装置、および半導体装置の製造方法
WO2023021938A1 (ja) * 2021-08-18 2023-02-23 ローム株式会社 半導体装置

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