WO2024103751A1 - 显示面板 - Google Patents

显示面板 Download PDF

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Publication number
WO2024103751A1
WO2024103751A1 PCT/CN2023/103535 CN2023103535W WO2024103751A1 WO 2024103751 A1 WO2024103751 A1 WO 2024103751A1 CN 2023103535 W CN2023103535 W CN 2023103535W WO 2024103751 A1 WO2024103751 A1 WO 2024103751A1
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WO
WIPO (PCT)
Prior art keywords
layer
recessed portion
angle
display panel
inorganic layer
Prior art date
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Ceased
Application number
PCT/CN2023/103535
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English (en)
French (fr)
Inventor
周雪
顾宇
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US18/862,163 priority Critical patent/US20250344575A1/en
Publication of WO2024103751A1 publication Critical patent/WO2024103751A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present application relates to the field of display technology, and in particular to a display panel.
  • OLED Organic light-emitting diodes
  • OLED devices are easily affected by water and oxygen, which leads to a reduction in the life of OLED devices;
  • the embodiments of the present application provide a display panel, which can improve its service life and light extraction efficiency.
  • An embodiment of the present application provides a display panel, comprising:
  • An inorganic layer wherein the inorganic layer is disposed on the driving structure layer, a recessed portion is disposed on the inorganic layer, an angle between a side surface of the recessed portion and a plane where the inorganic layer is located is a first angle, and the first angle is less than 90 degrees;
  • an anode the anode being disposed on the inorganic layer and covering the recessed portion;
  • a pixel definition layer is disposed on the inorganic layer; the pixel definition layer is provided with a defining opening, the defining opening exposes the anode and corresponds to the recessed portion, the angle between the sidewall of the defining opening and the plane where the pixel definition layer is located is a second angle, the second angle is less than 90 degrees, and the second angle is less than the first angle;
  • the light-emitting layer being disposed on the anode and within the defined opening;
  • the cathode is arranged on the light-emitting layer and covers the concave portion accordingly.
  • the depth of the recessed portion is less than or equal to the thickness of the inorganic layer.
  • the driving structure layer includes a buffer layer, a thin film transistor layer and a planar layer
  • the buffer layer is arranged on the substrate
  • the thin film transistor layer is arranged on the buffer layer
  • the planar layer is arranged on the thin film transistor layer
  • the inorganic layer covers the planar layer
  • the thickness of the inorganic layer is between 0.025 and 0.34 times the thickness of the planar layer.
  • the inorganic layer in a region corresponding to the defined opening, includes at least two sections, and the recess separates two adjacent sections.
  • the recessed portion is ring-shaped or grid-shaped.
  • the inorganic layer in a region corresponding to the defined opening, includes a middle region and an edge region disposed on a peripheral side of the middle region;
  • the depth of the recessed portion located in the middle area is greater than the depth of the recessed portion located in the edge area.
  • the bottom width of the recessed portion is between 1 micron and 5 microns; the depth of the recessed portion is between 0.1 micron and 1 micron.
  • the inorganic layer in a region corresponding to the defined opening, includes a middle region and an edge region disposed on a peripheral side of the middle region;
  • the first angle of the recessed portion located in the middle area is greater than the first angle of the recessed portion located in the edge area.
  • a first concave portion is formed on both the light emitting layer and the cathode corresponding to the recessed area.
  • the display panel further includes a light extraction layer, a first inorganic encapsulation layer, an organic layer, and a second inorganic encapsulation layer sequentially covering the cathode;
  • the light extraction layer and the first inorganic encapsulation layer corresponding to the recessed portion region are both formed with a second concave portion.
  • a portion of the planar layer located at the recess has a first roughness
  • a portion of the planar layer covered by the inorganic layer has a second roughness
  • the first roughness is greater than the second roughness
  • a microstructure is formed on a portion of the planar layer located at the recessed portion.
  • the microstructure is provided on the entire surface.
  • the embodiment of the present application also relates to a display panel, which includes:
  • a driving structure layer wherein the driving structure layer is arranged on the substrate;
  • An inorganic layer wherein the inorganic layer is disposed on the driving structure layer, a recessed portion is disposed on the inorganic layer, an angle between a side surface of the recessed portion and a plane where the inorganic layer is located is a first angle, and the first angle is less than 90 degrees;
  • an anode the anode being disposed on the inorganic layer and covering the recessed portion;
  • a pixel definition layer is disposed on the inorganic layer; the pixel definition layer is provided with a defining opening, the defining opening exposes the anode and corresponds to the recessed portion, the angle between the sidewall of the defining opening and the plane where the pixel definition layer is located is a second angle, the second angle is less than 90 degrees, and the second angle is less than the first angle;
  • the light-emitting layer being disposed on the anode and within the defined opening;
  • a cathode the cathode being disposed on the light-emitting layer and correspondingly covering the recessed portion;
  • the depth of the recessed portion is less than or equal to the thickness of the inorganic layer, the bottom width of the recessed portion is between 1 micrometer and 5 micrometers, and the depth of the recessed portion is between 0.1 micrometer and 1 micrometer.
  • the driving structure layer includes a buffer layer, a thin film transistor layer and a planar layer
  • the buffer layer is arranged on the substrate
  • the thin film transistor layer is arranged on the buffer layer
  • the planar layer is arranged on the thin film transistor layer
  • the inorganic layer covers the planar layer
  • the thickness of the inorganic layer is between 0.025 and 0.34 times the thickness of the planar layer.
  • the inorganic layer in a region corresponding to the defined opening, includes at least two sections, and the recess separates two adjacent sections.
  • the recessed portion is ring-shaped or grid-shaped.
  • the inorganic layer in a region corresponding to the defined opening, includes a middle region and an edge region disposed on a peripheral side of the middle region;
  • the depth of the recessed portion located in the middle area is greater than the depth of the recessed portion located in the edge area.
  • the inorganic layer in a region corresponding to the defined opening, includes a middle region and an edge region disposed on a peripheral side of the middle region;
  • the first angle of the recessed portion located in the middle area is greater than the first angle of the recessed portion located in the edge area.
  • a portion of the planar layer located at the recess has a first roughness
  • a portion of the planar layer covered by the inorganic layer has a second roughness
  • the first roughness is greater than the second roughness
  • the embodiment of the present application adopts the method of forming an inorganic layer on the driving structure layer, and setting a recessed portion on the inorganic layer.
  • the anode is set on the inorganic layer and covers the recessed portion;
  • the pixel definition layer is set on the inorganic layer;
  • the pixel definition layer is provided with a defined opening, the defined opening exposes the anode and corresponds to the recessed portion.
  • the light-emitting layer is set on the anode and is set in the defined opening;
  • the cathode is set on the light-emitting layer and corresponds to the recessed portion.
  • the effect of waterproofing can be achieved, reducing the invasion of water and oxygen from the flat layer into the light-emitting layer; on the other hand, the setting of the recessed portion makes the film layer above the anode have an undulating structure.
  • the propagation path of the light changes, reducing the optical waveguide effect, thereby improving the light output of the panel.
  • the embodiment of the present application adopts a method of forming a recessed portion on an inorganic layer.
  • the inorganic layer is easier to form a larger first angle under thinner thickness conditions, which can reduce the difficulty and cost of the process.
  • the larger first angle can better improve the light output effect of the panel.
  • FIG1 is a schematic structural diagram of a display panel provided in a first embodiment of the present application.
  • FIG2 is a light radiation diagram of a display panel in a light waveguide mode provided by the first embodiment of the present application
  • FIG3 is a schematic diagram of a partial structure of a display panel provided in the first embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of an inorganic layer in a corresponding limiting opening in a display panel provided in the first embodiment of the present application;
  • FIG. 5 is another schematic diagram of the structure of the inorganic layer in the corresponding limiting opening in the display panel provided in the first embodiment of the present application;
  • FIG6 is a schematic diagram of the structure of a display panel provided in a second embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a display panel provided in the third embodiment of the present application.
  • the embodiment of the present application provides a display panel, which is described in detail below. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments.
  • an embodiment of the present application provides a display panel 100 , which includes a substrate 11 , a driving structure layer 12 , an inorganic layer 13 , an anode 14 , a pixel definition layer 15 , a light emitting layer 16 and a cathode 17 .
  • the driving structure layer 12 is disposed on the substrate 11.
  • the inorganic layer 13 is disposed on the driving structure layer 12, and a recessed portion ac is disposed on the inorganic layer 13.
  • the anode 14 is disposed on the inorganic layer 13 and covers the recessed portion ac.
  • the pixel definition layer 15 is disposed on the inorganic layer 13.
  • the pixel definition layer 15 is provided with a defined opening xk, which exposes the anode 14 and corresponds to the recessed portion ac.
  • the light emitting layer 16 is disposed on the anode 14 and in the defined opening xk.
  • the cathode 17 is disposed on the light emitting layer 16 and covers the recessed portion ac.
  • the angle between the side of the recessed portion ac and the plane where the inorganic layer 13 is located is a first angle ⁇ , which is less than 90 degrees.
  • the angle between the sidewall of the defined opening xk and the plane where the pixel definition layer 15 is located is a second angle ⁇ , which is less than 90 degrees.
  • the second angle ⁇ is smaller than the first angle ⁇ .
  • the display panel 100 of the first embodiment sets a recessed portion ac in the inorganic layer 13.
  • the inorganic layer 13 due to the characteristics of the material of the inorganic layer 13, it can achieve the effect of waterproofing and reducing the invasion of water and oxygen from the flat layer into the light-emitting layer 16; on the other hand, the setting of the recessed portion makes the film layer above the anode 14 have an uneven structure. When light is radiated to the uneven structure, the propagation path of the light changes, reducing the optical waveguide effect, thereby improving the light output rate of the display panel 100.
  • the anode has a reflective metal
  • the cathode has a metal material with a certain transmittance
  • an optical microcavity is formed between the cathode and the anode.
  • the light emitted by the luminescent atoms in the light-emitting layer is generally directed in all directions. Some molecules with horizontal orientation are more conducive to light emission, but it is impossible to achieve 100% horizontal orientation. Therefore, under the action of charge injection and recombination, the atoms will produce visible light in the forward range, and will also produce side emission that is confined to the organic material or pixel definition layer.
  • the embodiment of the present application forms a recessed portion ac on the inorganic layer 13.
  • the inorganic layer 13 is easier to form a larger first angle ⁇ under a thinner thickness condition, which can reduce the difficulty and cost of the process.
  • the larger first angle ⁇ can better improve the light output effect of the panel.
  • the first angle ⁇ is too small, the light extraction efficiency of the panel is not significantly improved, and if the first angle ⁇ is too large, the slope uniformity of the anode 14 is affected.
  • the first angle ⁇ ⁇ 70 degrees can be set.
  • the first angle ⁇ can be 30 degrees, 45 degrees, 60 degrees or 70 degrees.
  • the second angle ⁇ may be 20 degrees, 30 degrees or 40 degrees.
  • the substrate 11 may be a rigid substrate or a flexible substrate.
  • the material of the substrate 11 includes one of glass, sapphire, silicon, silicon dioxide, polyethylene, polypropylene, polystyrene, polylactic acid, polyethylene diphthalate, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyether sulfone, aromatic fluorotoluene containing polyarylate, polycyclic olefin, polyimide or polyurethane.
  • the substrate 11 may be formed by stacking multiple layers of films or may be a single-layer structure.
  • the driving structure layer 12 includes a buffer layer 121, a thin film transistor layer 122 and a planar layer 123.
  • the buffer layer 121 is disposed on the substrate 11.
  • the thin film transistor layer 122 is disposed on the buffer layer 121.
  • the planar layer 123 is disposed on the thin film transistor layer 122.
  • the inorganic layer 13 covers the planar layer 123.
  • the thickness of the inorganic layer 13 is between 0.025 and 0.34 times the thickness of the planar layer 123 .
  • the recessed portion ac is formed in the inorganic layer 13. Compared with forming a recessed portion with the same angle in the organic layer, the inorganic layer 13 can be made thinner and the process difficulty is relatively simple.
  • the inorganic layer generally adopts a dry etching process to form structures such as openings.
  • the thickness of the inorganic layer 13 is 0.025 times, 0.05 times, 0.1 times, 0.3 times, 0.34 times, etc., of the thickness of the planar layer 123 .
  • the thickness of the planar layer 123 may be between 3 micrometers and 4 micrometers, for example, 3 micrometers, 3.5 micrometers or 4 micrometers.
  • the planar layer 123 may be a multi-layer formed of at least one organic material layer.
  • the present disclosure is not limited thereto, for example, the planar layer 123 is a single organic material layer.
  • the thin film transistor layer 122 sequentially stacks an active layer 12a, a first insulating layer jy1, a first metal layer 12b, a second insulating layer jy2, a second metal layer 12c, a third insulating layer jy3, a third metal layer 12d, a fourth insulating layer jy4 and a fourth metal layer 12e on the buffer layer 121.
  • the buffer layer 121, the first insulating layer jy1, the second insulating layer jy2, the third insulating layer jy3, the fourth insulating layer jy4 and the inorganic layer 13 may each be formed of a plurality of inorganic material layers stacked in an alternating manner.
  • the buffer layer 121, the third insulating layer jy3 and the inorganic layer 13 may be formed as a double layer formed by stacking an inorganic material layer including at least one of silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide, magnesium oxide and titanium oxide, or a multilayer formed by alternately stacking an inorganic material layer including at least one of silicon oxide (SiO x) , silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide, magnesium oxide and titanium oxide.
  • the buffer layer 121, the third insulating layer jy3 and the inorganic layer 13 may be formed as a single-layer inorganic material layer including the above-mentioned insulating material.
  • the third insulating layer jy3 may be made of an organic insulating material such as polyimide (PI) or the like.
  • the materials of the fourth insulating layer jy4 and the planar layer 123 can be organic transparent film layers, such as transparent photoresist, epoxy resin, polyimide, polyvinyl alcohol, polymethyl methacrylate, polystyrene, etc.
  • the active layer 12a may be made of single crystal silicon, polycrystalline silicon (poly-Si), or an oxide semiconductor.
  • the materials of the first metal layer 12b, the second metal layer 12c, the third metal layer 12d and the fourth metal layer 12e can be respectively formed using metal elements selected from chromium (Cr), copper (Cu), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), cobalt (Co), alloys containing any of the above metal elements as components, or alloys combining any of the above metal elements, etc.
  • the first metal layer 12b, the second metal layer 12c, the third metal layer 12d and the fourth metal layer 12e can have a single-layer structure or a stacked structure of two or more layers.
  • the first metal layer 12 b includes a gate electrode.
  • the third metal layer 12 d includes a source electrode and a drain electrode.
  • the fourth metal layer 12 e includes a conductive pad. The drain electrode or the source electrode is connected to the conductive pad, and the conductive pad is connected to the anode 14 .
  • the driving structure layer 12 may also be other structures, such as a bottom-gate thin film transistor structure, or a two-layer or three-layer metal layer structure.
  • the depth d of the recessed portion ac is less than or equal to the thickness of the inorganic layer 13 .
  • the recessed portion ac when the depth d of the recessed portion ac is less than the thickness of the inorganic layer 13, the recessed portion ac is a groove, and when the depth d of the recessed portion ac is equal to the thickness of the inorganic layer 13, the recessed portion ca is an opening.
  • the inorganic layer 13 isolates the flat layer 123 and the anode 14.
  • the recessed portion ac is an opening, in the region defining the opening xk, part of the anode 14 contacts the flat layer 123, thereby improving the stress release performance of the anode 14; and when the depth d is limited, the inorganic layer 13 can be thinner than the groove solution.
  • part of the recessed portion ac may be an opening, and part of the recessed portion ac may be a groove; or part of a recessed portion may be an opening, and the other part may be a groove.
  • the inorganic layer 13 includes a middle region 13z and an edge region 13h disposed on a peripheral side of the middle region 13z.
  • the depth of the recessed portion ac located in the middle area 13z is greater than the depth of the recessed portion ac located in the edge area 13h, so that the anode 14 has a deeper recessed structure in the portion corresponding to the middle area 13z than in the portion corresponding to the edge area 13h, which not only improves the light extraction efficiency; in addition, since the recessed portion ac corresponding to the edge area 13h is very close to the side wall of the limiting opening xk, the recessed portion ac in this area is shallower, which can reduce the risk of the anode 14 and the above film layers breaking near the side wall of the limiting opening xk.
  • the bottom width L of the recessed portion ac is too narrow and the depth of the recessed portion ac is deeper, a hole-shaped pit will be formed, which will affect the continuity and uniformity of the film formation of the anode and the light-emitting layer, and the control accuracy of the process will be difficult to achieve; if the bottom width L of the recessed portion ac is too wide, the light output efficiency of the panel will be sacrificed to a certain extent.
  • the bottom width L of the concave portion ac is between 1 micron and 5 microns.
  • the depth d of the concave portion ac is between 0.1 micron and 1 micron.
  • the bottom width L of the recessed portion ac may be 1 micron, 2 microns, 3 microns, 4 microns or 5 microns, etc.
  • the depth d of the recessed portion ac may be 0.1 micron, 0.2 micron, 0.3 micron, 0.4 micron, 0.5 micron, 0.6 micron, 0.7 micron, 0.8 micron, 0.9 micron or 1 micron.
  • the thickness of the inorganic layer 13 is less than or equal to 1 micrometer, such as 0.1 micrometer, 0.2 micrometer, 0.3 micrometer, 0.4 micrometer, 0.5 micrometer, 0.6 micrometer, 0.7 micrometer, 0.8 micrometer, 0.9 micrometer or 1 micrometer.
  • the material of the pixel definition layer 15 can be an organic transparent film layer, such as transparent photoresist, epoxy resin, polyimide, polyvinyl alcohol, polymethyl methacrylate, polystyrene, etc.
  • the second angle ⁇ of the patterned pixel definition layer 15 formed by photolithography is generally smaller than the first angle ⁇ formed by dry etching of the inorganic layer 13 .
  • the second angle ⁇ is smaller than the first angle ⁇ . Since the light-emitting layer 16 is formed by an evaporation process, the light-emitting layer 16 is formed before the anode 14.
  • the anode 14 is formed on the inorganic layer 13 and covers the recessed portion ac. At this time, the anode 14 compensates for the first angle ⁇ to a certain extent, so that the angle of the portion of the anode 14 corresponding to the recessed portion ac becomes smaller.
  • the angles tend to be the same, which improves the uniformity of the film formation of the light-emitting layer 16 and improves the light output effect of the display panel 100.
  • the feature that the second angle ⁇ is smaller than the first angle ⁇ can also be achieved by using other processes or adjusting process parameters according to different materials, so this application does not limit it.
  • the light emitting layer 16 may be formed of a low molecular weight organic material or a high molecular weight organic material such as PEDOT (poly (3,4-ethylenedioxythiophene)).
  • PEDOT poly (3,4-ethylenedioxythiophene)
  • the light emitting layer 16 may be a single layer structure.
  • the light emitting layer 16 may also be formed of a plurality of layers including a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), an electron injection layer (EIL), or an emission layer.
  • HIL hole injection layer
  • HTL hole transport layer
  • ETL electron transport layer
  • EIL electron injection layer
  • the light emitting layer 16 and the cathode 17 corresponding to the recessed portion ac region are both formed with a first concave portion.
  • Such a configuration reduces the light waveguide effect of the light emitting layer 16 and the cathode 17, and further improves the light extraction efficiency of the display panel 100.
  • the display panel 100 further includes a light extraction layer 18 , a first inorganic encapsulation layer 191 , an organic layer 192 , and a second inorganic encapsulation layer 193 sequentially covering the cathode 17 .
  • the light extraction layer 18 and the first inorganic encapsulation layer 191 corresponding to the concave portion ac region are both formed with a second concave portion.
  • Such a configuration reduces the optical waveguide effect of the light extraction layer 18 and the first inorganic encapsulation layer 191, further improving the light extraction efficiency of the display panel 100.
  • the inorganic layer 13 in the region corresponding to the defined opening xk, includes at least two sub-portions 131 , and the concave portion ac separates two adjacent sub-portions 131 .
  • the inorganic layer 13 is divided into a plurality of sub-sections 131 by using the recessed portions ac, thereby improving the uniform light emission effect of the display panel 100 .
  • the recessed portion ac may be in a ring shape, a grid shape, a strip shape, or the like.
  • the recessed portion ac in the area corresponding to the defined opening xk, may also be circular, square, or the like.
  • the display panel 100 of the second embodiment is different from the display panel 100 of the first embodiment in that: in the area corresponding to the defined opening xk, the first angle ⁇ of the recessed portion ac located in the middle area 13z is greater than the first angle ⁇ of the recessed portion ac located in the edge area 13h.
  • Such a configuration can improve the uniformity of light emitted by the display panel 100 .
  • the second embodiment can add the above-mentioned distinguishing features on the basis of the first embodiment; or can add the above-mentioned distinguishing features on the basis that the depth of the recessed portion ac in the middle area 13z is equal to the depth of the recessed portion ac in the edge area 13h.
  • the display panel 100 of the third embodiment is different from the display panel 100 of the first or second embodiment in that the portion of the planar layer 123 located at the recessed portion ac has a first roughness.
  • the portion of the planar layer 123 covered by the inorganic layer 13 has a second roughness.
  • the first roughness is greater than the second roughness.
  • the microstructure 12 w is formed in the portion of the flat layer 123 located at the concave portion ac.
  • the concave portion ac When the concave portion ac is an opening, the opening exposes the microstructure 12w; when the concave portion ac is a groove, the bottom of the groove covers the microstructure 12w.
  • the microstructure 12w is used to correspond to the concave portion ac, so that when light radiates to the microstructure 12w, diffuse reflection occurs, further improving the light extraction efficiency.
  • the microstructure 12w may be formed by using the etching gas for etching the inorganic layer 13 to continue etching the exposed flat layer 123, so that the microstructure 12w is formed in the portion of the flat layer 123 corresponding to the recessed portion ac; in this case, the recessed portion ac is an opening.
  • the microstructure 12w may be formed on the flat layer 123 first, and then the inorganic layer 13 is formed on the flat layer 123. This method may form a partial or entire microstructure 12w.
  • the microstructure 12w may also be disposed on the entire surface.
  • the third embodiment of the present application adopts forming an inorganic layer 13 on the driving structure layer 12, and setting a recessed portion ac on the inorganic layer 13.
  • the anode 14 is set on the inorganic layer 13 and covers the recessed portion ac;
  • the pixel definition layer 15 is set on the inorganic layer 13;
  • the pixel definition layer 15 is provided with a defined opening xk, and the defined opening xk exposes the anode 14 and corresponds to the recessed portion ac.
  • the light-emitting layer 16 is set on the anode 14 and is set in the defined opening xk;
  • the cathode 17 is set on the light-emitting layer 16 and covers the recessed portion ac.
  • the effect of waterproofing can be achieved, thereby reducing the invasion of water and oxygen from the flat layer 123 into the light-emitting layer; on the other hand, the setting of the recessed portion ac makes the film layer above the anode 14 have a concave-convex structure.
  • the propagation path of the light changes, reducing the optical waveguide effect, thereby improving the light output rate of the display panel 100.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本申请实施例公开了一种显示面板，该显示面板采用在驱动结构层上形成无机层，并在无机层上设置凹陷部。像素定义层的限定口露出阳极。凹陷部的侧面与无机层所在平面的夹角为第一夹角，第一夹角小于90度，限定口的侧壁与像素定义层所在平面的夹角为第二夹角，第二夹角小于90度，第二夹角小于第一夹角。

Description

显示面板 技术领域
本申请涉及显示技术领域，具体涉及一种显示面板。
 背景技术
有机电致发光二极管（Organic Light-emitting diodes，OLED）由于具有能自主发光、工作温度范围宽、响应速度快、视角广、发光效率高、可制作在柔性衬底上、驱动电压及能耗低等优点吸引了全球众多显示厂商的目光，被誉为下一代的显示技术。随着科学技术的不断发展，显示面板的生产技术越来越成熟，而市场对面板的功耗和稳定性要求也越来越高。
在对现有技术的研究和实践过程中，本申请的发明人发现，一是OLED器件容易受水氧的影响，而导致OLED器件的寿命降低；二是OLED面板一般只有少部分的光能够辐射到空气中被人眼观察到，大部分的光因基底模式、波导模式、表面等离子模式和材料吸收的方式被局限在OLED面板的内部，无法被利用，导致OLED面板的出光效率较低。
 发明概述
本申请实施例提供一种显示面板，可以提高其使用寿命和出光效率。
本申请实施例提供一种显示面板，其包括：
基板；
驱动结构层，所述驱动结构层设置在所述基板上；
无机层，所述无机层设置在所述驱动结构层上，所述无机层上设置凹陷部，所述凹陷部的侧面与所述无机层所在平面的夹角为第一夹角，所述第一夹角小于90度；
阳极，所述阳极设置在所述无机层上，且覆盖所述凹陷部；
像素定义层，所述像素定义层设置在所述无机层上；所述像素定义层开设有限定口，所述限定口露出所述阳极且对应于所述凹陷部，所述限定口的侧壁与所述像素定义层所在平面的夹角为第二夹角，所述第二夹角小于90度，第二夹角小于第一夹角；
发光层，所述发光层设置在所述阳极上，且设置在所述限定口内；以及
阴极，所述阴极设置在所述发光层上，且对应覆盖所述凹陷部。
可选的，在本申请的一些实施例中，所述凹陷部的深度小于或等于所述无机层的厚度。
可选的，在本申请的一些实施例中，30度≤所述第一夹角≤70度，20度≤所述第二夹角≤40度。
可选的，在本申请的一些实施例中，所述驱动结构层包括缓冲层、薄膜晶体管层和平坦层，所述缓冲层设置在所述基板上，所述薄膜晶体管层设置在所述缓冲层上，所述平坦层设置在所述薄膜晶体管层上，所述无机层覆盖在所述平坦层上；
所述无机层的厚度为所述平坦层的厚度的0.025倍至0.34倍之间。
可选的，在本申请的一些实施例中，在对应于所述限定口的区域中，所述无机层包括至少两个分部，所述凹陷部隔开相邻的两个所述分部。
可选的，在本申请的一些实施例中，所述凹陷部为环状或网格状。
可选的，在本申请的一些实施例中，在对应于所述限定口的区域中，所述无机层包括中间区和设置在所述中间区周侧的边缘区；
位于所述中间区的所述凹陷部的深度大于位于所述边缘区的所述凹陷部的深度。
可选的，在本申请的一些实施例中，所述凹陷部的底部宽度介于1微米至5微米之间；所述凹陷部的深度介于0.1微米到1微米之间。
可选的，在本申请的一些实施例中，在对应于所述限定口的区域中，所述无机层包括中间区和设置在所述中间区周侧的边缘区；
位于所述中间区的所述凹陷部的第一夹角大于位于所述边缘区的所述凹陷部的第一夹角。
可选的，在本申请的一些实施例中，在所述显示面板厚度方向的截面中，对应于所述凹陷部区域的所述发光层和所述阴极均形成有第一下凹部分。
可选的，在本申请的一些实施例中，所述显示面板还包括依次覆盖在所述阴极上的光提取层、第一无机封装层、有机层和第二无机封装层；
在所述显示面板厚度方向的截面中，对应于所述凹陷部区域的所述光提取层和所述第一无机封装层均形成有第二下凹部分。
可选的，在本申请的一些实施例中，所述平坦层位于所述凹陷部处的部分具有第一粗糙度，所述平坦层被所述无机层覆盖的部分具有第二粗糙度，所述第一粗糙度大于所述第二粗糙度。
可选的，在本申请的一些实施例中，所述平坦层位于所述凹陷部处的部分形成有微结构。
可选的，在本申请的一些实施例中，所述微结构整面设置。
本申请实施例还涉及一种显示面板，其包括：
基板；
驱动结构层，所述驱动结构层设置在所述基板上；
无机层，所述无机层设置在所述驱动结构层上，所述无机层上设置凹陷部，所述凹陷部的侧面与所述无机层所在平面的夹角为第一夹角，所述第一夹角小于90度；
阳极，所述阳极设置在所述无机层上，且覆盖所述凹陷部；
像素定义层，所述像素定义层设置在所述无机层上；所述像素定义层开设有限定口，所述限定口露出所述阳极且对应于所述凹陷部，所述限定口的侧壁与所述像素定义层所在平面的夹角为第二夹角，所述第二夹角小于90度，第二夹角小于第一夹角；
发光层，所述发光层设置在所述阳极上，且设置在所述限定口内；以及
阴极，所述阴极设置在所述发光层上，且对应覆盖所述凹陷部；
所述凹陷部的深度小于或等于所述无机层的厚度，所述凹陷部的底部宽度介于1微米至5微米之间；所述凹陷部的深度介于0.1微米到1微米之间。
可选的，在本申请的一些实施例中，30度≤所述第一夹角≤70度，20度≤所述第二夹角≤40度。
可选的，在本申请的一些实施例中，所述驱动结构层包括缓冲层、薄膜晶体管层和平坦层，所述缓冲层设置在所述基板上，所述薄膜晶体管层设置在所述缓冲层上，所述平坦层设置在所述薄膜晶体管层上，所述无机层覆盖在所述平坦层上；
所述无机层的厚度为所述平坦层的厚度的0.025倍至0.34倍之间。
可选的，在本申请的一些实施例中，在对应于所述限定口的区域中，所述无机层包括至少两个分部，所述凹陷部隔开相邻的两个所述分部。
可选的，在本申请的一些实施例中，所述凹陷部为环状或网格状。
可选的，在本申请的一些实施例中，在对应于所述限定口的区域中，所述无机层包括中间区和设置在所述中间区周侧的边缘区；
位于所述中间区的所述凹陷部的深度大于位于所述边缘区的所述凹陷部的深度。
可选的，在本申请的一些实施例中，在对应于所述限定口的区域中，所述无机层包括中间区和设置在所述中间区周侧的边缘区；
位于所述中间区的所述凹陷部的第一夹角大于位于所述边缘区的所述凹陷部的第一夹角。
可选的，在本申请的一些实施例中，所述平坦层位于所述凹陷部处的部分具有第一粗糙度，所述平坦层被所述无机层覆盖的部分具有第二粗糙度，所述第一粗糙度大于所述第二粗糙度。
有益效果
本申请实施例采用在驱动结构层上形成无机层，并在无机层上设置凹陷部。阳极设置在无机层上，且覆盖凹陷部；像素定义层设置在无机层上；像素定义层开设有限定口，限定口露出阳极且对应于凹陷部。发光层设置在阳极上，且设置在限定口内；阴极设置在发光层上，且对应覆盖凹陷部。
通过在无机层中设置凹陷部，一方面由于无机层材料的特征，可以达到防水氧的效果，减低了水氧从平坦层侵入发光层；另一方面，凹陷部的设置，使得阳极以上膜层具有凹凸起伏结构，当光线辐射到凹凸起伏结构时，光线的传播路劲发生改变，减低了光波导效果，进而提高了面板的出光率。
另外，本申请实施例采用在无机层上形成凹陷部，相较于在平坦层等有机层上形成凹陷部，无机层较为容易在更薄的厚度条件下形成较大的第一夹角，在工艺上可以减低难度，减低工艺成本，且较大的第一夹角能更好的提高面板的出光效果。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请第一实施例提供的显示面板的结构示意图；
图2是本申请第一实施例提供的显示面板处于光波导模式的光线辐射图；
图3是本申请第一实施例提供的显示面板的部分结构示意图；
图4是本申请第一实施例提供的显示面板中对应限位口内的无机层的一种结构示意图；
图5是本申请第一实施例提供的显示面板中对应限位口内的无机层的另一种结构示意图；
图6是本申请第二实施例提供的显示面板的结构示意图；
图7是本申请第三实施例提供的显示面板的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。
本申请实施例提供一种显示面板，下文进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。
请参照图1，本申请实施例提供一种显示面板100，其包括基板11、驱动结构层12、无机层13、阳极14、像素定义层15、发光层16和阴极17。
驱动结构层12设置在基板11上。无机层13设置在驱动结构层12上，无机层13上设置凹陷部ac。阳极14设置在无机层13上，且覆盖凹陷部ac。
像素定义层15设置在无机层13上。像素定义层15开设有限定口xk，限定口xk露出阳极14且对应于凹陷部ac。发光层16设置在阳极14上，且设置在限定口xk内。阴极17设置在发光层16上，且对应覆盖凹陷部ac。
凹陷部ac的侧面与无机层13所在平面的夹角为第一夹角θ，第一夹角θ小于90度。限定口xk的侧壁与像素定义层15所在平面的夹角为第二夹角α，第二夹角α小于90度。第二夹角α小于第一夹角θ。
本第一实施例的显示面板100通过在无机层13中设置凹陷部ac，一方面由于无机层13材料的特征，可以达到防水氧的效果，减低了水氧从平坦层侵入发光层16；另一方面，凹陷部的设置，使得阳极14以上膜层具有凹凸起伏结构，当光线辐射到凹凸起伏结构时，光线的传播路劲发生改变，减低了光波导效果，进而提高了显示面板100的出光率。
具体的，在实际应用中，阳极具有反射金属，阴极具有一定透光率的金属材料，阴极和阳极之间会形成一个光学微腔。发光层的发光原子发出的光一般会朝向各个方向，某些具有水平方向取向的分子会更利于出光，但无法做到百分百水平取向。因此，原子在电荷注入和复合作用下，会产生正向范围内的可视出光，也会产生侧向发射被局限在有机材料或像素定义层的光，这部分光会不断被反射，形成波导模式，但无法正向出光，从而降低了出光耦合效率。现在阳极14及其以上膜层具有凹凸起伏结构，可以将这部分光发射出来，进而增加出光效率，如图2所示。
另外，本申请实施例采用在无机层13上形成凹陷部ac，相较于在平坦层等有机层上形成凹陷部，无机层13较为容易在更薄的厚度条件下形成较大的第一夹角θ，在工艺上可以减低难度，减低工艺成本，且较大的第一夹角θ能更好的提高面板的出光效果。
需要理解的是，绝缘膜层之间，绝缘膜层与电极（阳极和阴极）之间均存在折射率差异，由于膜层之间存有折射率的差异，导致光波导作用的产生。
在本第一实施例的显示面板100中，可以理解的是，第一夹角θ过小，面板出光效率提升作用体现不明显，第一夹角θ过大，影响阳极14爬坡均匀性。
故为了体现显示面板100的出光效率，且不影响阳极成膜的均匀性，可设定30度≤第一夹角θ≤70度。比如，第一夹角θ可以是30度、45度、60度或70度等。
请继续参照图3，可以理解的是，第二夹角α过小，面板出光效率提升作用体现不明显，第二夹角α过大，影响发光层16和阴极17爬坡连续性和均匀性。
可选的，20度≤第二夹角α≤40度，以比如第二夹角α可以是20度、30度或40度。
可选的，基板11可为硬性基板或者柔性基板。基板11的材质包括玻璃、蓝宝石、硅、二氧化硅、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇脂、聚碳酸酯、聚醚砜、含有聚芳酯的芳族氟甲苯、多环烯烃、聚酰亚胺或聚氨酯中的一种。
可选的，基板11可以是多层膜堆叠形成，也可以是单层结构。
驱动结构层12包括缓冲层121、薄膜晶体管层122和平坦层123，缓冲层121设置基板11上。薄膜晶体管层122设置在缓冲层121上。平坦层123设置在薄膜晶体管层122上。无机层13覆盖在平坦层123上。
无机层13的厚度为平坦层123的厚度的0.025倍至0.34倍之间。
因此，本实施例采用在无机层13中形成凹陷部ac，相较于在有机层形成同等角度的凹陷部，无机层13可以做到更薄，且工艺难度较为简单。
需要理解的是，无机层一般采用干刻蚀工艺形成开孔等结构。
可选的，无机层13的厚度为平坦层123的厚度的0.025倍、0.05倍、0.1倍、0.3倍或0.34倍等。
可选的，平坦层123的厚度可以是3微米到4微米之间，比如可以是3微米、3.5微米或4微米等。
可选的，平坦层123可以由至少一种有机材料层而形成的多层。然而，本公开不限于此，比如平坦层123是单层有机材料层。
薄膜晶体管层122依次层叠设置在缓冲层121上的有源层12a、第一绝缘层jy1、第一金属层12b、第二绝缘层jy2、第二金属层12c、第三绝缘层jy3、第三金属层12d、第四绝缘层jy4和第四金属层12e。
可选的，上述缓冲层121、第一绝缘层jy1、第二绝缘层jy2、第三绝缘层jy3、第四绝缘层jy4和无机层13各自可以由以交替的方式堆叠的多个无机材料层形成。例如，缓冲层121、第三绝缘层jy3和无机层13可以形成为通过堆叠包括氧化硅(SiO x)、氮化硅(SiN x)、氮氧化硅(SiO xN y) 、氧化铝、氧化镁和氧化钛中的至少一种的无机材料层而形成的双层，或者通过交替堆叠包括氧化硅(SiO x)、氮化硅(SiN x)、氮氧化硅(SiO xN y) 、氧化铝、氧化镁和氧化钛中的至少一种的无机材料层而形成的多层。然而，本公开不限于此，缓冲层121、第三绝缘层jy3和无机层13可以形成为包含上述绝缘材料的单层无机材料层。
此外，在一个或更多个实施例中，第三绝缘层jy3可以由诸如聚酰亚胺(PI)等的有机绝缘材料制成。
第四绝缘层jy4和平坦层123的材料分别可以是有机透明膜层，比如透明光刻胶，环氧树脂、聚酰亚胺、聚乙烯醇、聚甲基丙烯酸甲酯、聚苯乙烯等。
有源层12a材料可以由单晶硅、多晶硅(poly-Si)或氧化物半导体形成。
第一金属层12b、第二金属层12c、第三金属层12d和第四金属层12e的材料分别可以是使用选自铬(Cr)、铜(Cu)、铝(Al)、金(Au)、银(Ag)、锌(Zn)、钼(Mo)、钽(Ta)、钛(Ti)、钨(W)、锰(Mn)、镍(Ni)、铁(Fe)、钴(Co)中的金属元素、以上述任何金属元素为成分的合金或者组合上述任何金属元素的合金等形成。此外，第一金属层12b、第二金属层12c、第三金属层12d和第四金属层12e可以具有单层结构或者两层以上的叠层结构。
可选的，第一金属层12b包括栅极。第三金属层12d包括源极和漏极。第四金属层12e包括导电垫。其中，漏极或源极连接于导电垫，导电垫连接于阳极14。
其中，在本申请的实施例中，驱动结构层12也可以是其他的架构，比如底栅型薄膜晶体管架构，又比如可以是两层或三层金属层的架构等。
可选的，如图3所示，在无机层13中，凹陷部ac的深度d小于或等于无机层13的厚度。
可以理解的是，当凹陷部ac的深度d小于无机层13的厚度时，凹陷部ac为凹槽。当凹陷部ac的深度d等于无机层13的厚度时，凹陷部ca为开口。
当凹陷部ac为凹槽时，在限定口xk的区域，无机层13隔绝平坦层123和阳极14。当凹陷部ac为开口时，在限定口xk的区域，阳极14的部分接触平坦层123，提高了阳极14的应力释放性能；且在深度d有所限定的情况下，相较于凹槽的方案可以薄化无机层13。
在一些实施例中，也可以部分凹陷部ac为开口，部分凹陷部ac为凹槽；亦或者一个凹陷部中的一部分为开口，另一部分为凹槽。
可选的，在对应于限定口xk的区域中，无机层13包括中间区13z和设置在中间区13z周侧的边缘区13h。
位于中间区13z的凹陷部ac的深度大于位于边缘区13h的凹陷部ac的深度，使得阳极14在对应于中间区13z的部分相较于对应于边缘区13h的部分具有更深的凹陷结构，不仅能提高出光效率；另外由于对应于边缘区13h的凹陷部ac距离限定口xk的侧壁很近，故该区域的凹陷部ac较浅，可减少阳极14及以上膜层在靠近限定口xk侧壁处发生断裂的风险。
可以理解的是，凹陷部ac深度d太浅时，对改变光线传播路径作用较小，无法达到提高出光效率的作用；若凹陷部ac深度d太深，会影响阳极14爬坡的连续性以及阴极的成膜均匀性。
另外，若凹陷部ac的底部宽度L过窄，凹陷部ac的深度较深时，会形成孔洞型凹坑，影响阳极和发光层成膜连续性和均匀性，且制程的控制精度较难实现；若凹陷部ac的底部宽度L过宽时，则在一定程度上会牺牲面板的出光效率。
因此，在本实施例中，凹陷部ac的底部宽度L介于1微米至5微米之间。凹陷部ac的深度d介于0.1微米到1微米之间。这样的设置，以提高面板的出光效率，且保证阳极14及其以上膜层成膜的连续性和均匀性。
可选的，凹陷部ac的底部宽度L可以是1微米、2微米、3微米、4微米或5微米等。凹陷部ac的深度d可以是0.1微米、0.2微米、0.3微米、0.4微米、0.5微米、0.6微米、0.7微米、0.8微米、0.9微米或1微米。
可选的，无机层13的厚度小于或等于1微米，比如0.1微米、0.2微米、0.3微米、0.4微米、0.5微米、0.6微米、0.7微米、0.8微米、0.9微米或1微米。
像素定义层15的材料分别可以是有机透明膜层，比如透明光刻胶，环氧树脂、聚酰亚胺、聚乙烯醇、聚甲基丙烯酸甲酯、聚苯乙烯等。
当像素定义层15的材料为聚合树脂时，由于聚合树脂在热固化时具有一定的流动性，因此采用光刻工艺后形成的图案化的像素定义层15的第二夹角α一般小于无机层13干蚀刻出的第一夹角θ。
可选的，于此同时，第二夹角α小于第一夹角θ，由于发光层16采用蒸镀工艺形成，发光层16形成在阳极14之前，阳极14形成在无机层13上且覆盖凹陷部ac，此时阳极14在一定程度上弥补了第一夹角θ，使得阳极14对应于凹陷部ac的部分的夹角变小，因此当发光层16形成在阳极14对应于凹陷部ac的部分上和形成在像素定义层15的口壁上时，夹角趋于相同，提高了发光层16成膜的均匀性，同时提高显示面板100的出光效果。
当然，第二夹角α小于第一夹角θ的特征也可以根据不同材料采用其他工艺或通过调整工艺参数实现，故本申请不作限制。
可选的，发光层16可以由低分子有机材料或诸如PEDOT(聚(3,4-乙撑-二氧噻吩))的高分子有机材料形成。发光层16可以是单层结构。
此外，发光层16也可以由包括空穴注入层(HIL)、空穴传输层(HTL)、电子传输层(ETL)、电子注入层(EIL)或发射层的多层形成。当发光层16包括所有的层时，空穴注入层(HIL)被布置在阳极14上，空穴传输层(HTL)、有机发射层、电子传输层(ETL)和电子注入层(EIL)被依次层叠在其上。
可选的，在显示面板100厚度方向MN的截面中，对应于凹陷部ac区域的发光层16和阴极17均形成有第一下凹部分。这样的设置降低了发光层16和阴极17的光波导效应，进一步提高了显示面板100的出光效率。
显示面板100还包括依次覆盖在阴极17上的光提取层18、第一无机封装层191、有机层192和第二无机封装层193。
在显示面板100厚度方向MN的截面中，对应于凹陷部ac区域的光提取层18和第一无机封装层191均形成有第二下凹部分。这样的设置降低了光提取层18和第一无机封装层191的光波导效应，进一步提高了显示面板100的出光效率。
请参照图4和图5，在对应于限定口xk的区域中，无机层13包括至少两个分部131，凹陷部ac隔开相邻的两个分部131。
本第一实施例采用凹陷部ac将无机层13划分为多个分部131，提高了显示面板100均匀出光的效果。
可选的，在对应于限定口xk的区域中，凹陷部ac可以是环状、网格状或条状等。
在一些实施例中，在对应于限定口xk的区域中，凹陷部ac也可以是圆形、方形等形状。
请参照图6，本第二实施例的显示面板100与第一实施例的显示面板100的不同之处在于：在对应于限定口xk的区域中，位于中间区13z的凹陷部ac的第一夹角θ大于位于边缘区13h的凹陷部ac的第一夹角θ。
这样的设置可以提高显示面板100出光的均匀性。
需要说明的是，本第二实施例可以在第一实施例的基础上，增加上述区别特征；也可以是在中间区13z的凹陷部ac的深度等于位于边缘区13h的凹陷部ac的深度的基础上，增加上述区别特征。
请参照图7，本第三实施例的显示面板100与第一或第二实施例的显示面板100的不同之处在于：平坦层123位于凹陷部ac处的部分具有第一粗糙度。平坦层123被无机层13覆盖的部分具有第二粗糙度。第一粗糙度大于第二粗糙度。
也就是说，相当于平坦层123位于凹陷部ac处的部分形成有微结构12w。
当凹陷部ac为开口时，开口裸露微结构12w；当凹陷部ac为凹槽时，凹槽的底部覆盖微结构12w。采用微结构12w对应于凹陷部ac，使得光线辐射至微结构12w时，会产生漫反射，进一步提高了出光效率。
其中，形成微结构12w的方式可以是，采用刻蚀无机层13的刻蚀气体继续刻蚀裸露的平坦层123，使得平坦层123对应于凹陷部ac的部分形成微结构12w；此时凹陷部ac为开口。也可以是先在平坦层123形成微结构12w，再在平坦层123上形成无机层13，该方式可以形成局部或整面的微结构12w。
在一些实施例中，微结构12w也可以整面设置。
本申请第三实施例采用在驱动结构层12上形成无机层13，并在无机层13上设置凹陷部ac。阳极14设置在无机层13上，且覆盖凹陷部ac；像素定义层15设置在无机层13上；像素定义层15开设有限定口xk，限定口xk露出阳极14且对应于凹陷部ac。发光层16设置在阳极14上，且设置在限定口xk内；阴极17设置在发光层16上，且对应覆盖凹陷部ac。
通过在无机层13中设置凹陷部ac，一方面由于无机层13材料的特征，可以达到防水氧的效果，减低了水氧从平坦层123侵入发光层；另一方面，凹陷部ac的设置，使得阳极14以上膜层具有凹凸起伏结构，当光线辐射到凹凸起伏结构时，光线的传播路劲发生改变，减低了光波导效果，进而提高了显示面板100的出光率。
以上对本申请实施例所提供的一种显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示面板，其包括：
    基板；
    驱动结构层，所述驱动结构层设置在所述基板上；
    无机层，所述无机层设置在所述驱动结构层上，所述无机层上设置凹陷部，所述凹陷部的侧面与所述无机层所在平面的夹角为第一夹角，所述第一夹角小于90度；
    阳极，所述阳极设置在所述无机层上，且覆盖所述凹陷部；
    像素定义层，所述像素定义层设置在所述无机层上；所述像素定义层开设有限定口，所述限定口露出所述阳极且对应于所述凹陷部，所述限定口的侧壁与所述像素定义层所在平面的夹角为第二夹角，所述第二夹角小于90度，第二夹角小于第一夹角；
    发光层，所述发光层设置在所述阳极上，且设置在所述限定口内；以及
    阴极，所述阴极设置在所述发光层上，且对应覆盖所述凹陷部。
  2. 根据权利要求1所述的显示面板，其中，所述凹陷部的深度小于或等于所述无机层的厚度。
  3. 根据权利要求2所述的显示面板，其中，30度≤所述第一夹角≤70度，20度≤所述第二夹角≤40度。
  4. 根据权利要求2所述的显示面板，其中，所述驱动结构层包括缓冲层、薄膜晶体管层和平坦层，所述缓冲层设置在所述基板上，所述薄膜晶体管层设置在所述缓冲层上，所述平坦层设置在所述薄膜晶体管层上，所述无机层覆盖在所述平坦层上；
    所述无机层的厚度为所述平坦层的厚度的0.025倍至0.34倍之间。
  5. 根据权利要求2所述的显示面板，其中，在对应于所述限定口的区域中，所述无机层包括至少两个分部，所述凹陷部隔开相邻的两个所述分部。
  6. 根据权利要求5所述的显示面板，其中，所述凹陷部为环状或网格状。
  7. 根据权利要求2所述的显示面板，其中，在对应于所述限定口的区域中，所述无机层包括中间区和设置在所述中间区周侧的边缘区；
    位于所述中间区的所述凹陷部的深度大于位于所述边缘区的所述凹陷部的深度。
  8. 根据权利要求2所述的显示面板，其中，在对应于所述限定口的区域中，所述无机层包括中间区和设置在所述中间区周侧的边缘区；
    位于所述中间区的所述凹陷部的第一夹角大于位于所述边缘区的所述凹陷部的第一夹角。
  9. 根据权利要求1所述的显示面板，其中，所述凹陷部的底部宽度介于1微米至5微米之间；所述凹陷部的深度介于0.1微米到1微米之间。
  10. 根据权利要求4所述的显示面板，其中，所述平坦层位于所述凹陷部处的部分具有第一粗糙度，所述平坦层被所述无机层覆盖的部分具有第二粗糙度，所述第一粗糙度大于所述第二粗糙度。
  11. 根据权利要求10所述的显示面板，其中，所述平坦层位于所述凹陷部处的部分形成有微结构。
  12. 根据权利要求11所述的显示面板，其中，所述微结构整面设置。
  13. 一种显示面板，其包括：
    基板；
    驱动结构层，所述驱动结构层设置在所述基板上；
    无机层，所述无机层设置在所述驱动结构层上，所述无机层上设置凹陷部，所述凹陷部的侧面与所述无机层所在平面的夹角为第一夹角，所述第一夹角小于90度；
    阳极，所述阳极设置在所述无机层上，且覆盖所述凹陷部；
    像素定义层，所述像素定义层设置在所述无机层上；所述像素定义层开设有限定口，所述限定口露出所述阳极且对应于所述凹陷部，所述限定口的侧壁与所述像素定义层所在平面的夹角为第二夹角，所述第二夹角小于90度，第二夹角小于第一夹角；
    发光层，所述发光层设置在所述阳极上，且设置在所述限定口内；以及
    阴极，所述阴极设置在所述发光层上，且对应覆盖所述凹陷部；
    所述凹陷部的深度小于或等于所述无机层的厚度，所述凹陷部的底部宽度介于1微米至5微米之间；所述凹陷部的深度介于0.1微米到1微米之间。
  14. 根据权利要求13所述的显示面板，其中，30度≤所述第一夹角≤70度，20度≤所述第二夹角≤40度。
  15. 根据权利要求13所述的显示面板，其中，所述驱动结构层包括缓冲层、薄膜晶体管层和平坦层，所述缓冲层设置在所述基板上，所述薄膜晶体管层设置在所述缓冲层上，所述平坦层设置在所述薄膜晶体管层上，所述无机层覆盖在所述平坦层上；
    所述无机层的厚度为所述平坦层的厚度的0.025倍至0.34倍之间。
  16. 根据权利要求13所述的显示面板，其中，在对应于所述限定口的区域中，所述无机层包括至少两个分部，所述凹陷部隔开相邻的两个所述分部。
  17. 根据权利要求16所述的显示面板，其中，所述凹陷部为环状或网格状。
  18. 根据权利要求13所述的显示面板，其中，在对应于所述限定口的区域中，所述无机层包括中间区和设置在所述中间区周侧的边缘区；
    位于所述中间区的所述凹陷部的深度大于位于所述边缘区的所述凹陷部的深度。
  19. 根据权利要求13所述的显示面板，其中，在对应于所述限定口的区域中，所述无机层包括中间区和设置在所述中间区周侧的边缘区；
    位于所述中间区的所述凹陷部的第一夹角大于位于所述边缘区的所述凹陷部的第一夹角。
  20. 根据权利要求15所述的显示面板，其中，所述平坦层位于所述凹陷部处的部分具有第一粗糙度，所述平坦层被所述无机层覆盖的部分具有第二粗糙度，所述第一粗糙度大于所述第二粗糙度。
PCT/CN2023/103535 2022-11-15 2023-06-29 显示面板 Ceased WO2024103751A1 (zh)

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