WO2021147858A1 - 彩膜结构、彩膜基板、显示模组及其制作方法、显示装置 - Google Patents

彩膜结构、彩膜基板、显示模组及其制作方法、显示装置 Download PDF

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WO2021147858A1
WO2021147858A1 PCT/CN2021/072705 CN2021072705W WO2021147858A1 WO 2021147858 A1 WO2021147858 A1 WO 2021147858A1 CN 2021072705 W CN2021072705 W CN 2021072705W WO 2021147858 A1 WO2021147858 A1 WO 2021147858A1
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Prior art keywords
light
substrate
reflective layer
black matrix
layer
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PCT/CN2021/072705
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English (en)
French (fr)
Inventor
高昊
李彦松
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京东方科技集团股份有限公司
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Priority to US17/628,160 priority Critical patent/US11899303B2/en
Publication of WO2021147858A1 publication Critical patent/WO2021147858A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133504—Diffusing, scattering, diffracting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure relates to the field of display technology, in particular to a color filter structure, a color filter substrate and a manufacturing method thereof, a display module and a manufacturing method thereof, and a display device.
  • the display module can realize color display through the combination of the light-emitting substrate and the color film structure.
  • the black matrix in the color filter structure will absorb part of the natural light, thereby reducing the light reflectivity of the light emitting surface of the display module and improving the contrast of the display module.
  • a color film structure which includes a black matrix, a color film layer, and a reflective layer.
  • the black matrix has a plurality of openings;
  • the color filter layer includes a plurality of filter portions, at least a part of each filter portion is located in an opening of the black matrix;
  • the reflective layer is located in the black matrix and is configured Is close to the side of the light-emitting substrate, and the orthographic projection of the reflective layer on the plane where the black matrix is located is covered by the black matrix;
  • the reflective layer is configured to emit the light-emitting substrate toward the black matrix At least a part of the light is reflected back to the light-emitting substrate, so that at least a part of the light is emitted through the color film layer.
  • the orthographic projection of the reflective layer on the plane where the black matrix is located completely coincides with the black matrix.
  • the reflective layer has a plurality of light-transmitting holes, and each light-transmitting hole corresponds to an opening; the boundary of the orthographic projection of each light-transmitting hole on the plane where the black matrix is located, and corresponding The boundary of the opening coincides or lies outside the boundary of the corresponding opening.
  • the reflective layer is configured such that the surface close to the light-emitting substrate is flat.
  • the reflective layer is configured to have a microstructure for scattering light on a surface close to the light-emitting substrate, and the microstructure includes a sawtooth structure, a wave structure, and columnar structures and cones arranged in an array. At least one of a spherical structure or a spherical structure.
  • the reflective layer is configured such that the surface close to the light-emitting substrate includes at least one curved surface recessed toward the black matrix side.
  • the surface that is configured to be close to the light-emitting substrate includes two curved surfaces recessed toward the side of the black matrix, and two curved surfaces are recessed toward the side of the black matrix.
  • the curved surface is symmetrically arranged along the bisector of the reference direction with respect to the gap area between the two adjacent openings; the reference direction is a direction perpendicular to the arrangement direction of the two adjacent openings.
  • the reflective layer is located between the two adjacent openings. The thickness of the part gradually increases.
  • the reflective layer when the reflective layer has a plurality of light-transmitting holes, the reflective layer is configured such that the surface close to the light-emitting substrate includes a plurality of curved surfaces recessed toward one side of the black matrix. A curved surface surrounds a light hole.
  • the reflective layer has a single-layer film structure.
  • the material of the reflective layer includes at least one of silver, magnesium, copper, and aluminum.
  • the reflective layer includes a plurality of film layers stacked along the thickness direction of the color filter structure, and the refractive index difference between any two adjacent film layers is greater than or equal to 0.3.
  • the thickness of at least one film layer in the reflective layer is an integer multiple of 1/4 of the target wavelength.
  • the target wavelength is a reference value set according to the wavelength range of the light emitted by the light-emitting substrate.
  • the multiple film layers included in the reflective layer include alternately arranged first film layers and second film layers; the material of the first film layer includes silicon oxide and/or polyimide, The material of the second film layer includes silicon nitride.
  • the reflective layer is configured to have a flat surface away from the light-emitting substrate.
  • the reflective layer is configured to have a microstructure for scattering light on a surface away from the light-emitting substrate, and the microstructure includes a sawtooth structure, a wave structure, and columnar structures and cones arranged in an array. At least one of a spherical structure or a spherical structure.
  • the reflective layer is configured such that a surface away from the light-emitting substrate includes at least one curved surface recessed toward the black matrix side.
  • a color filter substrate in another aspect, includes a substrate and the color filter structure in any of the above embodiments.
  • the color filter structure is arranged on the substrate, and the reflective layer of the color filter structure is arranged on a side of the black matrix of the color filter structure away from the substrate.
  • a manufacturing method of the above-mentioned color filter substrate includes: fabricating a black matrix with a plurality of openings on a substrate; fabricating a reflective layer on the side of the black matrix away from the substrate ; Make color film layer. Wherein, the orthographic projection of the reflective layer on the substrate is covered by the orthographic projection of the black matrix on the substrate; the color film layer includes a plurality of filter parts, and at least One part is located in an opening of the black matrix.
  • the forming a reflective layer on the side of the black matrix away from the substrate includes: forming an initial reflective layer on the side of the black matrix away from the substrate; The surface of the layer away from the substrate is subjected to surface treatment, so that the surface forms a microstructure for scattering light, or at least one curved surface recessed toward the side of the black matrix.
  • the orthographic projection of the initial reflective layer on the substrate is covered by the orthographic projection of the black matrix on the substrate.
  • a display module which includes a light-emitting substrate and the above-mentioned color filter substrate.
  • the light-emitting substrate is an organic electroluminescence display module, or the light-emitting substrate includes a backlight module, an array substrate, and a liquid crystal layer; the light-emitting substrate includes a plurality of sub-pixel light-emitting regions.
  • the color filter substrate and the light-emitting substrate are superimposed and arranged, and one opening of the black matrix of the color filter substrate corresponds to a sub-pixel light-emitting area.
  • the light-emitting substrate is an organic electroluminescence display module
  • the black matrix, the color film layer, and the reflective layer of the color filter substrate are close to the light-emitting substrate relative to the substrate
  • the light-emitting substrate includes a backlight
  • the array substrate, the liquid crystal layer, and the color filter substrate form a liquid crystal cell
  • the backlight module is disposed on a side of the array substrate away from the color filter substrate. side.
  • another display module which includes a light-emitting substrate and the color filter structure described in any of the above-mentioned embodiments.
  • the light-emitting substrate is an organic electroluminescence display module; the light-emitting substrate includes a plurality of sub-pixel light-emitting regions.
  • the color filter structure is directly arranged on the encapsulation layer of the light emitting substrate, and the reflective layer of the color filter structure is close to the light emitting substrate with respect to its black matrix; one opening and one sub-pixel of the black matrix of the color filter substrate The light-emitting area corresponds.
  • a method for manufacturing the above-mentioned display module includes: fabricating a reflective layer on an encapsulation layer of a light-emitting substrate; fabricating a black matrix on the side of the reflective layer away from the light-emitting substrate; Color film layer.
  • the orthographic projection of the reflective layer on the light-emitting substrate is covered by the orthographic projection of the black matrix on the light-emitting substrate; the color film layer includes a plurality of filter parts, each of which has at least One part is located in an opening of the black matrix.
  • the surface of the reflective layer away from the light-emitting substrate has a microstructure for scattering light, or includes at least one curved surface recessed toward one side of the black matrix.
  • the fabrication method further includes: fabricating a base structure on the encapsulation layer of the light-emitting substrate. Wherein, the base structure is far away from the surface morphology of the light-emitting substrate, and is compatible with the surface morphology of the reflective layer away from the light-emitting substrate, so that in the subsequent step of making the reflective layer, the reflective layer is far away from all the surfaces.
  • the surface of the light-emitting substrate forms a microstructure for scattering light, or at least one curved surface recessed toward the side of the black matrix.
  • a display device which includes the display module in any of the above-mentioned embodiments.
  • Figure 1 is a schematic diagram of a color film structure in the related art
  • Figure 2 is a top view of a color filter structure according to some embodiments.
  • Figure 3 is a cross-sectional view along the section line A-A in Figure 2;
  • 4A is a schematic diagram when the reflective layer is a single-layer film structure according to some embodiments.
  • 4B is another schematic diagram when the reflective layer is a single-layer film structure according to some embodiments.
  • FIG. 5 is a schematic diagram of a reflective layer according to some embodiments.
  • Figure 6 is a cross-sectional view along section line B-B in Figure 5;
  • FIG. 7A is a schematic diagram of a reflective layer including multiple film layers according to some embodiments.
  • FIG. 7B is another schematic diagram of the reflective layer including multiple film layers according to some embodiments.
  • FIG. 7C is still another schematic diagram of the reflective layer including multiple film layers according to some embodiments.
  • FIG. 8 is a schematic diagram of a color filter substrate according to some embodiments.
  • FIG. 9 is a flowchart of a manufacturing method of a color filter substrate according to some embodiments.
  • FIG. 10 is a schematic diagram of manufacturing steps of a color filter substrate according to some embodiments.
  • FIG. 11 is a schematic diagram of a display module according to some embodiments.
  • FIG. 12 is another schematic diagram of a display module according to some embodiments.
  • FIG. 13 is another schematic diagram of a display module according to some embodiments.
  • FIG. 14 is a flowchart of a manufacturing method of a display module according to some embodiments.
  • FIG. 15 is a schematic diagram of manufacturing steps of a display module according to some embodiments.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, “plurality” means two or more.
  • At least one of A, B, and C has the same meaning as “at least one of A, B, or C", and both include the following combinations of A, B, and C: only A, only B, only C, A and B
  • “A and/or B” includes the following three combinations: A only, B only, and the combination of A and B.
  • the exemplary embodiments are described herein with reference to cross-sectional views and/or plan views as idealized exemplary drawings.
  • the thickness of layers and regions are exaggerated for clarity. Therefore, variations in the shape with respect to the drawings due to, for example, manufacturing technology and/or tolerances can be envisaged. Therefore, the exemplary embodiments should not be construed as being limited to the shape of the area shown herein, but include shape deviations due to, for example, manufacturing.
  • an etched area shown as a rectangle will generally have curved features. Therefore, the areas shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shape of the area of the device, and are not intended to limit the scope of the exemplary embodiments.
  • a orthographic projection on the substrate covers the orthographic projection of B on the substrate
  • the boundary coincides, or the boundary between the orthographic projection of A on the substrate and the orthographic projection of B on the substrate at least partially does not coincide, and the orthographic projection of B on the substrate is within the range of the orthographic projection of A on the substrate .
  • the color film structure 01 is arranged on the light-emitting side of the light-emitting substrate 02; the color film structure 01 includes a black matrix 011 and a color film layer 012.
  • the black matrix 011 has a plurality of openings 013, and the color film layer 012 is located Inside the opening 013 of the black matrix 011.
  • the above structure has the following problem: part of the light emitted by the light-emitting substrate 02 is directed to the area where the black matrix 011 is located, and is absorbed by the black matrix 011, which increases the loss of light emitted by the light-emitting substrate 02 and reduces the overall display module The amount of light emitted reduces the transmission efficiency of light emitted by the light-emitting substrate 02.
  • the color filter structure 10 includes a black matrix 11, a color filter layer 12, and a reflective layer 13.
  • the black matrix 11 has a plurality of openings 111
  • the color filter layer 12 includes a plurality of filter portions 121, and at least a part of each filter portion 121 is located in an opening 111 of the black matrix 11, for example, each filter portion 121 is entirely located in the black matrix.
  • the main body of each filter 121 is located in an opening 111 of the black matrix 11, and the boundary overlaps on the black matrix 11.
  • a filter part 121 is located in an opening 111 of the black matrix 11.
  • the black matrix 11 is configured to block the highly reflective structure of the light-emitting substrate 200 while absorbing natural light, so as to reduce the light reflectivity of the surface of the color film structure 10 that is arranged far from the light-emitting substrate 200, increase the contrast of the display module, and improve the display The display effect of the module.
  • the reflective layer 13 is located on the side of the black matrix 11 that is arranged close to the light-emitting substrate 200, and the reflective layer 13 can cover the orthographic projection of the reflective layer 13 on the plane where the black matrix 11 is located by the black matrix 11 to ensure The reflective layer 13 does not affect the aperture ratio of the sub-pixels.
  • the reflective layer 13 is configured to reflect at least a part of the light emitted from the light-emitting substrate 200 to the black matrix 11 back to the light-emitting substrate 200 so that at least a part of the light is emitted through the color film layer 12.
  • the part of the light emitted by the light-emitting substrate 200 directed to the area where the black matrix 11 is located is reflected by the reflective layer 13 and then directed to the side of the light-emitting substrate 200; the part of the light directed to the side of the light-emitting substrate 200, It is reflected again by the light-emitting substrate 200; in this way, part of the light originally directed to the black matrix 11 is reflected back and forth at least once between the reflective layer 13 and the light-emitting substrate 200, so that the propagation direction of the light is changed, so that part of the light is finally reflected by the color film layer. 12 is emitted, thereby reducing the amount of light emitted by the black matrix 11 absorbing the light-emitting substrate 200, increasing the amount
  • the light-emitting substrate 200 has some structures with high light reflectivity, such as thin film transistors and signal lines; for another example, the light-emitting substrate 200 is an organic light-emitting display module (Organic Light-Emitting Diode, OLED for short). )
  • OLED Organic Light-Emitting Diode
  • the anode and/or cathode included therein can also reflect light; for another example, when the light-emitting substrate 200 is a liquid crystal display module (Liquid Crystal Display, LCD for short), the included backlight The module can also reflect light.
  • These structures with higher reflectivity can reflect a part of the light reflected by the reflective layer 13 back to the light-emitting substrate 200, reflect it to the color film layer 12, and emit it through the color film layer 12, thereby reducing the light-emitting substrate 200 that is emitted to the black matrix 11.
  • the loss of light increases the light output rate of the color film layer 12, increases the light output rate of the color film structure 10, and improves the display effect of the display module 100.
  • the light-emitting substrate 200 when the light-emitting substrate 200 is an OLED display substrate, referring to FIG. 11, the light-emitting substrate 200 includes at least an anode 63 and/or a cathode 65 with high reflectivity; the light reflected by the reflective layer 13 back to the light-emitting substrate 200 Part of the light in the light-emitting substrate 200 will irradiate the anode 63 and cathode 65 of the light-emitting substrate 200. After being reflected by the anode 63 and/or cathode 65 of the light-emitting substrate 200, part of the light will be directed to the color film layer 13 of the color film structure 10, and Ejected from the color film layer 13.
  • the color film structure 10 and the light-emitting substrate 200 belong to the liquid crystal display module, and the color film structure 10 belongs to the color film substrate of the liquid crystal display module.
  • the light-emitting substrate 200 includes the backlight module of the liquid crystal display module, the array substrate and the liquid crystal display module. In the case of layers, the light-emitting substrate 200 includes at least a high-reflectivity backlight module, and part of the light reflected back to the light-emitting substrate 200 by the reflective layer 13 will irradiate the backlight module of the light-emitting substrate 200 through the light-emitting substrate. After the 200 backlight module is reflected, part of the light will be directed to the color film layer 13 and emitted from the color film layer 13.
  • the reflective layer 13 directly contacts the black matrix 11 as an example for description.
  • other film structures can also be provided directly between the reflective layer 13 and the black matrix 11, which is not specifically limited here.
  • the coverage area of the reflective layer 13 on the plane where the black matrix 11 is located will affect the overall reflectivity of the reflective layer 13. Referring to FIG. 3, the orthographic projection of the reflective layer 13 on the plane where the black matrix 11 is located completely coincides with the black matrix 11, so that all the light emitted by the light-emitting substrate 200 and directed to the black matrix 11 can be reflected by the reflective layer 13 to improve reflection
  • the reflective area of the layer 13 increases the reflectivity of the reflective layer 13 and reduces the loss of light emitted by the light-emitting substrate 200 by the black matrix 11.
  • the reflective layer 13 has a plurality of light-transmitting holes 131, and each light-transmitting hole 131 corresponds to an opening 111 of the black matrix 11.
  • the boundary of the orthographic projection of each light-transmitting hole 131 on the plane of the black matrix 11 coincides with the boundary of the corresponding opening 111, or is located outside the boundary of the corresponding opening 111, so that the reflective layer 13 is blackened
  • the matrix 11 is completely covered to prevent light from outside (the side of the black matrix 11 is arranged away from the light-emitting substrate 200) from irradiating the reflective layer 13, and to prevent the light reflectivity on the surface of the display module 100 from increasing.
  • the orthographic projection of the reflective layer 13 on the black matrix 11 is located on the black matrix 11.
  • the orthographic projection area of the reflective layer 13 on the black matrix 11 is smaller than the area of the black matrix 11.
  • the surface of the reflective layer 13 that is configured to be close to the light-emitting substrate 200 is flat.
  • the reflective layer 13 can be directly produced by evaporation or coating process, the process is simple; and there is no need to perform post-processing on the surface of the reflective layer 13 that is arranged close to the light-emitting substrate 200, which saves costs.
  • the plane has the effect of specular reflection, and the reflection efficiency of light is high.
  • the reflective layer 13 is configured to have a microstructure 132 for scattering light near the surface of the light-emitting substrate 200.
  • the microstructure 132 includes a sawtooth structure, a wavy structure, and at least one of a columnar structure, a cone structure, or a spherical structure arranged in an array; wherein, in FIG. 4B, only the microstructure is exemplarily expressed.
  • the schematic diagram when the structure is a sawtooth structure.
  • the reflective layer 13 is configured to be close to the microstructure 132 on the surface of the display substrate 110, so that the reflective layer 13 has a diffuse reflection effect, so that the part of the light emitted from a sub-pixel light-emitting area of the light-emitting substrate 200 is directed to the reflective layer 13.
  • the filter portion 121 corresponding to the light-emitting area of the sub-pixel can be emitted from the filter portion 121 corresponding to the light-emitting area of the sub-pixel; to prevent part of the light reflected by the reflective layer 13 and the light-emitting substrate 200 from being emitted from the filter portion 121 corresponding to the light-emitting area of the adjacent sub-pixel to prevent adjacent sub-pixels
  • the phenomenon of light mixing occurs in the light-emitting area, which improves the contrast of the display device and enhances the display effect of the display device.
  • the microstructures 132 may be periodically arranged on the surface of the reflective layer 13 that is configured to be close to the light-emitting substrate 200; for example, referring to FIG. 4B, the microstructures 132 on the surface of the reflective layer 13 may be a plurality of strips with equal spacing. structure.
  • the strip structure and the reflective layer 13 are integrally formed; referring to FIG. 4B, the cross section of the strip structure is a sharp-angled structure (corresponding to a sawtooth structure). Or, the cross-section of the strip structure is a smooth curved surface structure (corresponding to a wave-shaped structure).
  • the reflective layer 13 is configured such that the surface close to the light-emitting substrate 200 includes at least one curved surface 133 recessed toward the side of the black matrix 11, so that the light emitted by each sub-pixel light-emitting area can be as light as possible. It is mostly reflected to the light-emitting area of the sub-pixel and the surrounding area of the light-emitting substrate 200, and finally emitted from the filter portion 121 corresponding to the light-emitting area of the sub-pixel.
  • the number, shape, and positional relationship of the curved surfaces 133 can be selectively set according to specific reflectance requirements, which are not specifically limited here.
  • the portion of the reflective layer 13 located between two adjacent openings 111 of the black matrix 11 is configured to be close to the surface of the light-emitting substrate 200 (the reflective layer 13 in FIG.
  • the lower surface of the black matrix 11 includes two curved surfaces 133 recessed toward the side of the black matrix 11 (upper side in FIG. 6).
  • the two curved surfaces 133 are in a reference direction relative to the gap area between the two adjacent openings 111 of the black matrix 11
  • the bisector L1 (the horizontal direction in FIG. 6) is symmetrically arranged; wherein, the reference direction is a direction perpendicular to the arrangement direction of two adjacent openings 111.
  • any one of the two adjacent openings 111 points to the direction of the bisector L1 (in FIG. 6, the filter part 121 points to the direction of the dashed line L1, that is, the direction shown by the arrow M)
  • the thickness of the portion of the reflective layer 13 between two adjacent openings 111 gradually increases. That is, from any one of the two adjacent openings 111 pointing in the direction of the bisecting line L1, the reflective layer 13 is configured to be close to the surface of the light-emitting substrate 200 and gradually bend away from the black matrix 11.
  • the two curved surfaces 133 form two arc-shaped reflective surfaces, and the two arc-shaped reflective surfaces have the form of each facing the light-emitting area of its adjacent sub-pixels, so that the reflection efficiency of the light originally directed to the black matrix 11 can be further improved. And this part of the light is emitted through the color film layer 12 more. At the same time, it can reduce the probability that the reflective layer 13 reflects light to the adjacent sub-pixel light-emitting area, and prevents the light emitted from one sub-pixel light-emitting area from being reflected by the reflective layer 13 and the light-emitting substrate 200 from the adjacent sub-pixel light-emitting area.
  • the corresponding filter 121 emits. Wherein, the central angle of each curved surface 133 can be set according to actual conditions.
  • the reflective layer 13 between any two adjacent light-transmitting holes 131 has two curved surfaces 133; along the direction of the row of the light-transmitting holes 131, The reflective layer 13 between any two adjacent light-transmitting holes 131 has two curved surfaces 133 described above.
  • the reflective layer 13 is configured such that the surface close to the light-emitting substrate 200 includes a plurality of curved surfaces recessed toward the side of the black matrix 11. 133. Each curved surface 133 surrounds a light-transmitting hole 131, so that the reflective layer 13 forms a structure similar to a reflective cover.
  • One light-transmitting hole 131 corresponds to a sub-pixel light-emitting area of the light-emitting substrate 200. The light emitted by the sub-pixel is directed to the area centered on the light-transmitting hole 131.
  • Each curved surface 133 surrounds a light-transmitting hole 131, so that one sub-pixel Among the light emitted from the light-emitting area of the pixel, most of the light directed to the periphery of the light-transmitting hole 131 is reflected by the curved surface 133 surrounding the light-emitting hole 131 to the sub-pixel light-emitting area and the surrounding area on the light-emitting substrate 200, and is transmitted by the The light filter 121 corresponding to the light-emitting area of the sub-pixel emits light.
  • the reflectivity of the reflective layer 13 is greater than or equal to 90%, so that most of the light directed to the reflective layer 13 can be reflected by the reflective layer 13. As the reflectivity of the reflective layer 13 increases, the reflectivity The reflection effect of the layer 13 gradually increases, and the light extraction efficiency of the color film structure 10 gradually increases.
  • the reflectivity of the reflective layer 13 may be 90%, 92%, 93.5%, or the like.
  • the reflectivity of the reflective layer 13 greater than or equal to 90% is an optional specific implementation, rather than the only feasible embodiment.
  • the reflectivity of the reflective layer 13 may also be less than 90%.
  • the reflective layer 13 may have a single-layer structure or a multilayer film structure.
  • the reflective layer 13 may be a single-layer film structure.
  • the reflective layer 13 can be manufactured by evaporation deposition, sputtering or coating, and the manufacturing process of the single-layer film structure is simple.
  • the material of the reflective layer 13 includes at least one of silver, magnesium, copper, and aluminum.
  • the above-mentioned metal materials have high reflectivity, which can meet the requirements for the overall reflectivity of the reflective layer 13.
  • the reflective layer 13 includes a plurality of film layers 14 stacked along the thickness direction of the color filter structure 10, and the refractive index difference between any two adjacent film layers 14 It is greater than or equal to 0.3 to enhance the reflectivity of light on the contact surface between two adjacent film layers 14 and increase the overall reflectivity of the reflective layer 13.
  • the reflective layer 13 includes a plurality of film layers 14.
  • the film layers 14 can be made of low-cost non-metallic materials, thereby reducing the manufacturing cost of the color filter structure 10.
  • the refractive index difference between two adjacent film layers 14 is greater than Or equal to 0.3.
  • the refractive index of each film layer 14 may gradually increase (for example, the refractive index of each film layer 14 is: 1.8 , 2.1, 2.5, 2.8); or gradually decrease (for example, the refractive index of each film layer 14 is: 2.5, 2.2, 1.7, 1.4); or the refractive index of each film layer 14 fluctuates, (for example, each film The refractive index of layer 14 is: 1.8, 2.2, 1.9, 1.5).
  • the multiple film layers 14 included in the reflective layer 13 are superimposed along the thickness direction of the color filter structure 10, and the adjacent film layers 14 are closely attached to each other.
  • Each film layer 14 can be deposited by vapor deposition, PECVD (Plasma Enhanced Chemical) Vapor Deposition, plasma-enhanced chemical vapor deposition) or coating method is not specifically limited here.
  • the thickness of at least one film layer 14 in the reflective layer 13 is an integer multiple of 1/4 of the target wavelength; wherein the target wavelength is based on the light emitting substrate 100
  • the reference value for setting the wavelength range of light According to the principle of the Bragg reflector, when the thickness of the film layer 14 is an integer multiple of 1/4 of the target wavelength, the corresponding reflectivity of the film layer 14 is the largest, thereby enhancing the reflection effect and avoiding light absorption by the black matrix 11 as much as possible.
  • the reference value set for the wavelength range of the light emitted by the light-emitting substrate 100 may be: the wavelength value of the light with the highest proportion among the light actually emitted by the light-emitting base 110; for example, the light-emitting base 110 actually emits
  • the wavelength of the light is between 500 nm and 600 nm, and the light with the wavelength of 550 nm accounts for the highest proportion.
  • the reference value of the wavelength range of the light emitted by the light-emitting substrate 100 is 550 nm.
  • the thickness of at least one film layer 14 in the reflective layer 13 is an integer multiple of 1/4 of the target wavelength.
  • one film layer 14 is arranged close to the reflective substrate 110.
  • the thickness is an integer multiple of 1/4 of the target wavelength; or, among the multiple film layers 14 included in the reflective layer 13, the thickness of each film layer 14 is an integer multiple of 1/4 of the target wavelength.
  • the multiple film layers 14 included in the reflective layer 13 include first film layers 141 and second film layers 142 alternately arranged.
  • the material of the first film layer includes silicon oxide and/or polyimide, and the material of the second film layer includes silicon nitride.
  • the first film layer 141 and the second film layer 142 can be alternately formed, and the manufacturing process is simple.
  • the reflective layer 13 is formed by superimposing four film layers 14, including two first film layers 141 and two second film layers 142, the first film layer 141 and the second film layer 142
  • the layers 142 are alternately formed.
  • the film layer 14 closest to the black matrix 11 is the first film layer 141
  • the first film layer 141 is attached to the black matrix 11.
  • the black matrix 11 points to the light-emitting substrate.
  • the directions of 200 are: the first film layer 141, the second film layer 142, the first film layer 141, and the second film layer 142 in order.
  • the first film layer 141 is made of a silicon oxide film layer or a polyimide film layer with a relatively low refractive index
  • the second film layer 122 is a silicon nitride film layer with a relatively high refractive index
  • the silicon oxide film layer The polyimide film layer and the silicon nitride film layer are both non-metal film layers, and the production cost is lower than that of the metal film layer.
  • each film layer 14 included in the reflective layer 13 that is configured to be close to the light-emitting substrate 200 may be flat.
  • Each film layer 14 can be directly manufactured by evaporation or coating process, the process is simple; and there is no need to perform post-processing on the surface of the film layer 14 that is arranged close to the light-emitting substrate 200, which saves costs.
  • the plane has the effect of specular reflection, and the reflection efficiency of light is high.
  • each of the film layers 14 included in the reflective layer 13 is configured to be close to at least one film layer 14 of the light-emitting substrate 200, and is configured to be close to the surface of the light-emitting substrate 200.
  • Scattering microstructures 132; or, referring to FIG. 7C, the surface of each film layer 14 included in the reflective layer 13 that is configured to be close to the light-emitting substrate 200 has a microstructure 132 for scattering light.
  • the reflective layer 13 has a diffuse reflection effect, so that the part of the light emitted from the light-emitting area of a sub-pixel of the light-emitting substrate 200 that is directed to the reflective layer 13 can finally be emitted from the filter portion 121 corresponding to the light-emitting area of the sub-pixel; It prevents light mixing in the light-emitting areas of adjacent sub-pixels, improves the contrast of the display device, and enhances the display effect of the display device.
  • the microstructure 132 includes a sawtooth structure, a wave structure, and at least one of a columnar structure, a cone structure or a spherical structure arranged in an array.
  • the reflective layer 13 is configured to be a plane away from the surface of the light-emitting substrate 200 (the upper surface of the reflective layer 13 in FIG. 7A), and there is no need to configure the reflective layer 13 to be away from the light-emitting substrate 200.
  • the surface is processed for post-processing, saving cost.
  • the reflective layer 13 is configured such that the surface (the upper surface of the reflective layer 13 in FIG. 7C) far away from the light-emitting substrate 200 has a microstructure 134 for scattering light, and the microstructure 134 includes serrations. At least one of a shape structure, a wave-shaped structure, and a columnar structure, a cone-shaped structure, or a spherical structure arranged in an array; wherein, in FIG. 7C, only a schematic diagram when the microstructure is a sawtooth structure is exemplarily expressed.
  • the reflective layer 13 is configured such that the surface away from the light-emitting substrate 200 includes at least one curved surface recessed toward the side of the black matrix.
  • the reflective layer 13 is configured such that the surface away from the light-emitting substrate 200 has a microstructure 132 for scattering light, or the reflective layer 13 is configured such that the surface away from the light-emitting substrate 200 includes at least one curved surface that is recessed toward the side of the black matrix 11, The reflective layer 13 is configured to be close to the surface of the display substrate 110 to have a diffuse reflection effect.
  • the light passes through the black matrix 11 and passes through
  • the reflective layer 13 reflects to the area outside the black matrix 11, reduces the reflectivity of the area where the black matrix 11 is located, improves the contrast of the display module 10 under strong light irradiation, and improves the display effect of the display module 10 under strong light.
  • the color filter structure 10 provided by the embodiment of the present disclosure may be separately disposed on a substrate to form a color filter substrate. Therefore, in some embodiments, a color filter substrate 100 is provided. Referring to FIG. 8, the color filter substrate 100 includes a substrate 20 and a color filter structure 10 disposed on the substrate 20.
  • the color filter structure 10 may be any one or more of the above. The specific features, structures, materials or characteristics of the color filter structure 10 obtained by combining these embodiments or examples will not be repeated here.
  • the reflective layer 13 of the color filter structure 10 is arranged on the side of the black matrix 11 of the color filter structure 10 away from the substrate 20, so that when the color filter substrate 120 and the light emitting substrate 200 are combined to form the display module 100, the color filter structure 10
  • the reflective layer 13 is located on the side of the black matrix 11 that is arranged close to the light-emitting substrate 100.
  • the manufacturing method of the above-mentioned color filter substrate includes S110 to S130.
  • the orthographic projection of the reflective layer 13 on the substrate 20 is covered by the orthographic projection of the black matrix 11 on the substrate 20.
  • the reflective layer 13 can be fabricated by evaporation, vapor deposition, sputtering, coating and other processes.
  • the color filter layer 12 includes a plurality of filter portions 121, and at least a part of each filter portion 121 is located in an opening 111 of the black matrix 11.
  • the reflective layer 13 is configured to have a microstructure 132 for scattering light on the surface close to the light-emitting substrate 200, or the reflective layer 13 is configured to have at least one direction toward the surface close to the light-emitting substrate 200.
  • S120 (fabricating the reflective layer 13 on the side of the black matrix 11 away from the substrate 20) includes S121 to S122.
  • S122 Perform surface treatment on the surface of the initial reflective layer 130 away from the substrate 20, so that the surface forms a microstructure 132 for scattering light, or at least one curved surface recessed toward the black matrix 11 side. (The production process of other film layers in the color film substrate is not specifically introduced here).
  • the microstructure 13 or the curved surface recessed toward the side of the black matrix 11 can be formed by etching, ion bombardment or sputtering processes, and different manufacturing processes can be selected according to different structures.
  • etching, ion bombardment or sputtering processes and different manufacturing processes can be selected according to different structures.
  • different manufacturing processes can be selected according to different structures.
  • the reflective layer 13 has a single-layer film structure.
  • a thin film may be formed on the side of the black matrix 11 away from the substrate 20, and then the thin film may be patterned to form a plurality of light-transmitting holes 131 , Thereby forming the reflective layer 13.
  • the surface of the black matrix 11 can be vapor-deposited first.
  • the surface of the initial reflective layer away from the substrate 20 is flat; then, the surface of the reflective layer 13 is further processed by an etching process (including photoresist coating, development, etching, and peeling, etc.), so that the surface of the reflective layer 13 is further processed.
  • the surface of the layer 13 away from the substrate 20 forms a surface structure having a zigzag structure.
  • the reflective layer 13 is a multilayer film structure.
  • a multilayer film may be formed on the side of the black matrix 11 away from the substrate 20, and then the multilayer film may be patterned to form a plurality of light-transmitting films.
  • a hole 131 is formed, thereby forming the reflective layer 13.
  • the reflective layer 13 when the reflective layer 13 includes a plurality of film layers 14 stacked in the thickness direction of the color filter structure 10, and the surface away from the substrate 20 has a microstructure 132 for scattering light, it may be After the first film is formed, the surface of the first film away from the black matrix 11 is processed to have a microstructure 132 for scattering light, or at least one curved surface recessed toward the black matrix 11. In this way, in the subsequent production process of the film layer 14 (for example, the subsequent film layer 14 is formed by an evaporation process), each film layer 14 can have the same microstructure 132 as the first film, or at least one direction. A concave curved surface on one side of the black matrix 11.
  • the reflective layer 13 includes a plurality of film layers 14 stacked in the thickness direction of the color filter structure 10
  • one or more film layers 14 away from the black matrix 11 have a microstructure 132 for scattering light on the surface of the one or more film layers 14 away from the black matrix 11, or at least one surface toward the black matrix 11 A concave curved surface on one side.
  • the above-mentioned color film substrate 100 can be applied to a liquid crystal display module (Liquid Crystal Display, LCD for short), and can also be applied to an active light emitting display module.
  • the active light emitting display module can be an electroluminescent display module or a photoluminescent display module.
  • the electroluminescent display module may be an organic light-emitting diode (OLED) or a quantum dot electroluminescent display module (Quantum Dot Light Emitting Diodes, QLED for short).
  • the display module is a photoluminescence display module
  • the photoluminescence display module may be a quantum dot photoluminescence display module.
  • a display module 1001 is provided.
  • the display module 1001 is a liquid crystal display module and includes a superimposed arrangement
  • the light-emitting substrate 200 and the color filter substrate 100 in any of the foregoing embodiments.
  • the light-emitting substrate 200 includes a plurality of sub-pixel light-emitting areas 201; one opening 111 of the black matrix 11 of the color filter substrate 100 corresponds to one sub-pixel light-emitting area 201.
  • the light-emitting substrate 200 of the liquid crystal display module includes a backlight module 30, an array substrate 40 and a liquid crystal layer 50.
  • the array substrate 40, the liquid crystal layer 50 and the color film substrate 100 form a liquid crystal cell 202.
  • the backlight module 30 is disposed on the side of the array substrate 40 away from the color filter substrate 100. The backlight module 30 is used to provide a light source for the array substrate 40.
  • each sub-pixel of the array substrate 40 is provided with a thin film transistor 42 and a pixel electrode 43 on the first substrate 41.
  • the thin film transistor 42 includes an active layer 423, a source electrode 424, a drain electrode 425, a gate electrode 421, and a gate insulating layer 422.
  • the source electrode 424 and the drain electrode 425 are in contact with the active layer 423 respectively.
  • the pixel electrode 43 and the drain electrode of the thin film transistor 42 are in contact with each other. Extremely electrical connection.
  • the array substrate 40 further includes a common electrode 44 disposed on the first substrate 41.
  • the pixel electrode 43 and the common electrode 44 may be arranged on the same layer.
  • the pixel electrode 43 and the common electrode 44 are both comb-tooth structures including a plurality of strip-shaped sub-electrodes.
  • the pixel electrode 43 and the common electrode 44 may also be arranged in different layers.
  • a first insulating layer 45 is arranged between the pixel electrode 43 and the common electrode 44.
  • a second insulating layer 46 is further provided between the common electrode 44 and the thin film transistor 42.
  • the color filter substrate 100 includes a color filter layer 12 disposed on a substrate 20, wherein the color filter layer 12 includes at least a red filter portion, a green filter portion, and a blue filter portion.
  • the sub-pixels on the array substrate 40 are directly opposed to the sub-pixels on the array substrate 40, respectively.
  • the color filter substrate 100 further includes a black matrix 11 disposed on the substrate 20, and the black matrix 11 is used to separate the red filter portion, the green filter portion, and the blue filter portion.
  • the display module 1001 further includes a first polarizer 47 disposed on the side of the color filter substrate 100 away from the liquid crystal layer 50, and a first polarizer 47 disposed on the first polarizer 47 away from the color filter substrate 100.
  • the display module is an OLED display module and includes an overlay arrangement
  • the black matrix 11, the color filter layer 12 and the reflective layer 13 of the color filter substrate 100 are close to the light emitting substrate 200 relative to the substrate 20 thereof.
  • the light-emitting substrate 200 includes a plurality of sub-pixel light-emitting areas 201; one opening 111 of the black matrix 11 of the color filter substrate 100 corresponds to one sub-pixel light-emitting area 201.
  • the main structure of the light-emitting substrate 200 of the display module 1002 includes a display substrate 60 and an encapsulation layer 70 for encapsulating the display substrate 60 arranged in sequence; the encapsulation layer 70 may be an encapsulation film or an encapsulation substrate. Among them, the color filter substrate 100 is disposed on the side of the encapsulation layer 70 away from the display substrate 60.
  • each sub-pixel of the above-mentioned display substrate 60 includes a light emitting device and a driving circuit provided on the second substrate 61, and the driving circuit includes a plurality of thin film transistors 62.
  • the light-emitting device includes an anode 63, a light-emitting functional layer 64, and a cathode 65, and the anode 63 is electrically connected to the drain of the thin film transistor 62 serving as the driving transistor among the plurality of thin film transistors 62.
  • the thin film transistor 62 includes an active layer 621, a source electrode 622, a drain electrode 623, a gate electrode 624, and a gate insulating layer 625.
  • the source electrode 622 and the drain electrode 623 are respectively in contact with the active layer 621, and the anode electrode 63 is connected to the drain electrode of the thin film transistor 42. 623 electrical connection.
  • the display substrate 60 further includes a pixel defining layer 66 including a plurality of opening regions, and one light emitting device is disposed in one opening region.
  • the light-emitting functional layer 64 includes a light-emitting layer.
  • the light-emitting functional layer 64 in addition to the light-emitting layer, also includes an electron transport layer (election transporting layer, ETL), an electron injection layer (election injection layer, EIL), and a hole transporting layer (hole transporting layer). layer, HTL for short) and one or more of the hole injection layer (HIL for short).
  • the display substrate 60 further includes a flat layer 67 provided between the thin film transistor 111 and the anode 63.
  • the display module When the display module is an electroluminescence display module or a photoluminescence display module, the display module may be a top-emission display module.
  • the anode 63 close to the second substrate 61 is opaque and far away from the
  • the cathode 65 of the second substrate 61 is transparent or semi-transparent; the display module may also be a bottom-emission display module.
  • the anode 63 close to the second substrate 61 is transparent or semi-transparent, and away from the second substrate
  • the cathode 65 of 61 is opaque; the display module may also be a double-sided light-emitting display device.
  • the anode 63 near the second substrate 61 and the cathode 65 far away from the second substrate 61 are both transparent or semi-transparent.
  • the OLED display module further includes a polarizer 68, a first optical adhesive (Optically Clear Adhesive, OCA) 69, and a cover glass 300 disposed on the side of the color filter substrate 100 away from the light emitting substrate 200.
  • a polarizer 68 a first optical adhesive (Optically Clear Adhesive, OCA) 69, and a cover glass 300 disposed on the side of the color filter substrate 100 away from the light emitting substrate 200.
  • OCA Optically Clear Adhesive
  • the color filter structure 10 provided by the embodiment of the present disclosure can also be directly disposed on the encapsulation layer 70 of the organic electroluminescent substrate. Therefore, in some embodiments, referring to FIG. 13, a display module 1003 is provided.
  • the display module 1003 is an OLED display module and includes a light-emitting substrate 200 and the color film structure 10 in any of the above-mentioned embodiments, which emits light.
  • the substrate 200 is an organic electroluminescence substrate.
  • the reflective layer 13 of the color filter structure 10 is close to the light-emitting substrate 200 relative to the black matrix 11 thereof; an opening 111 of the black matrix 11 of the color filter substrate 10 corresponds to a sub-pixel light-emitting area 201.
  • the structure of the light-emitting substrate 200 of the display module 1003 is similar to that of the light-emitting substrate 200 of the display module 1002, and will not be repeated here.
  • the display module provided by any embodiment of the present disclosure includes a color filter structure 10 having a reflective layer 13, the reflective layer 13 is located between the black matrix 11 and the light-emitting substrate 200, and the reflective layer 13 does not affect the absorption of natural light by the black matrix 11 While reducing the reflectivity of the light-emitting surface of the display module 100, it can reflect the light irradiated by the light-emitting substrate 200 to the area of the black matrix 11, and reflect part of the light onto the light-emitting substrate 200, and then after being reflected by the light-emitting substrate 200, part of the light is colored
  • the film layer 130 emits, so as to prevent the light directed to the black matrix 11 from being directly absorbed by the black matrix 11, reduce the light energy loss of the black matrix 11 to the light-emitting substrate 200, and improve the light output efficiency of the display module 100 and the display of the display module 100 Effect.
  • the manufacturing method of the above-mentioned display module 1003 includes S210 to S230.
  • S220 Fabricate the black matrix 11 on the side of the reflective layer 13 away from the light-emitting substrate 200.
  • the orthographic projection of the reflective layer 13 on the light-emitting substrate 200 is covered by the orthographic projection of the black matrix 11 on the light-emitting substrate 200.
  • the color filter layer 12 includes a plurality of filter portions 121, and at least a part of each filter portion 121 is located in an opening 111 of the black matrix 11.
  • the method further includes:
  • the reflective layer 13 is close to the surface of the light-emitting substrate 200 to form a microstructure 132 for scattering light, or at least one curved surface recessed toward the side of the black matrix 11.
  • the surface of the encapsulation layer (usually silicon nitride) of the light-emitting substrate 200 is pretreated, that is, the surface of the encapsulation layer is etched or ion bombarded in advance to produce a microstructure 132 or at least one A corresponding base structure 203 with a curved surface recessed toward the side of the black matrix 11 (such as regularly arranged grooves, arrayed grooves, or convex curved surface structures, etc.).
  • a substrate is first deposited on the surface of the encapsulation layer, and then the surface of the substrate is pretreated to produce a substrate structure 203 that is compatible with the microstructure 132 or at least one curved surface recessed toward the side of the black matrix 11.
  • the reflective layer 13 is directly fabricated on the base structure 1102 by evaporation, vapor deposition, sputtering, or coating.
  • the reflective layer 13 may be a single-layer film structure, or the reflective layer 13 may include multiple layers along the thickness of the light-emitting substrate 200.
  • the film layer 14 is laminated.
  • Some embodiments of the present disclosure provide a display device, including the display module in any of the above embodiments.
  • the display module includes a color film structure 10 having a reflective layer 13 that does not affect the black matrix.
  • 11 absorbs natural light, reduces the reflectivity of the light-emitting surface of the display module 100, and can reflect the light emitted from the light-emitting substrate 200 toward the black matrix 11 area, and reflect part of the light onto the light-emitting substrate 200, and then after being reflected by the light-emitting substrate 200, Part of the light is emitted through the color film layer 130 to reduce the light loss of the light-emitting substrate 200 by the black matrix 11, thereby improving the product performance of the display device 200 and improving the light transmission efficiency of the display device 200.
  • the display device can be any product or component with a display function, such as a TV, a monitor, a notebook computer, a tablet computer, a mobile phone, a navigator, and so on.

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Abstract

一种彩膜结构，包括黑矩阵、彩膜层以及反射层；所述黑矩阵具有多个开口，所述彩膜层包括多个滤光部，每个滤光部的至少一部分位于所述黑矩阵的一个开口内；所述反射层位于所述黑矩阵被配置为靠近发光基板的一侧，且所述反射层在所述黑矩阵所在平面上的正投影被所述黑矩阵覆盖；所述反射层被配置为，将所述发光基板射向所述黑矩阵的光线中的至少一部分反射回所述发光基板，以使其中至少一部分光线经所述彩膜层射出。

Description

彩膜结构、彩膜基板、显示模组及其制作方法、显示装置
本申请要求于2020年01月20日提交的、申请号为202010065881.0的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种彩膜结构、彩膜基板及其制作方法、显示模组及其制作方法、显示装置。
背景技术
随着物联网的快速发展，显示模组广泛应用于手机、电视、笔记本电脑等智能产品中。显示模组可以通过发光基板与彩膜结构的结合实现彩色显示。当自然光进入彩膜基板中，彩膜结构中的黑矩阵会吸收部分自然光，从而降低显示模组出光面的光线反射率，提高显示模组的对比度。
公开内容
一方面，提供一种彩膜结构，包括黑矩阵、彩膜层以及反射层。所述黑矩阵具有多个开口；所述彩膜层包括多个滤光部，每个滤光部的至少一部分位于所述黑矩阵的一个开口内；所述反射层位于所述黑矩阵被配置为靠近发光基板的一侧，且所述反射层在所述黑矩阵所在平面上的正投影被所述黑矩阵覆盖；所述反射层被配置为，将所述发光基板射向所述黑矩阵的光线中的至少一部分反射回所述发光基板，以使其中至少一部分光线经所述彩膜层射出。
在一些实施例中，所述反射层在所述黑矩阵所在平面上的正投影与所述黑矩阵完全重合。
在一些实施例中，所述反射层具有多个透光孔，每个透光孔与一个开口对应；每个透光孔在所述黑矩阵所在平面上的正投影的边界，和与之对应的开口的边界重合，或者位于与之对应的开口的边界之外。
在一些实施例中，所述反射层被配置为靠近所述发光基板的表面为平面。或者，所述反射层被配置为靠近所述发光基板的表面具有用于对光线进行散射的微结构，所述微结构包括锯齿形结构，波浪形结构，和呈阵列排布的柱状结构、锥状结构或球状结构中的至少一种。或者，所述反射层被配置为靠近所述发光基板的表面包括至少一个向所述黑矩阵一侧凹陷的曲面。
在一些实施例中，所述反射层中位于相邻两个开口之间的部分中，被配置为靠近所述发光基板的表面包括两个向所述黑矩阵一侧凹陷的曲 面，两个所述曲面相对于所述相邻两个开口之间的间隙区域沿参考方向的平分线对称设置；所述参考方向为垂直于所述相邻两个开口的排列方向的方向。沿所述相邻两个开口的排列方向，且由所述相邻两个开口中的任一开口指向所述平分线的方向，所述反射层中位于所述相邻两个开口之间的部分的厚度逐渐增大。
在一些实施例中，在所述反射层具有多个透光孔的情况下，所述反射层被配置为靠近所述发光基板的表面包括多个向所述黑矩阵一侧凹陷的曲面，每个曲面围绕一个透光孔。
在一些实施例中，所述反射层为单层膜结构。
在一些实施例中，所述反射层的材料包括银、镁、铜和铝中的至少一种。
在一些实施例中，所述反射层包括多个沿所述彩膜结构的厚度方向层叠设置的膜层，且任意相邻的两个膜层之间的折射率差值大于或等于0.3。
在一些实施例中，所述反射层中至少一个膜层的厚度为目标波长的1/4的整数倍。其中，所述目标波长为根据所述发光基板所发出的光线的波长范围设定的参考值。
在一些实施例中，所述反射层所包括的多个膜层包括交替设置的第一膜层和第二膜层；所述第一膜层的材料包括氧化硅和/或聚酰亚胺，所述第二膜层的材料包括氮化硅。
在一些实施例中，所述反射层被配置为远离所述发光基板的表面为平面。或者，所述反射层被配置为远离所述发光基板的表面具有用于对光线进行散射的微结构，所述微结构包括锯齿形结构，波浪形结构，和呈阵列排布的柱状结构、锥状结构或球状结构中的至少一种。或者，所述反射层被配置为远离所述发光基板的表面包括至少一个向所述黑矩阵一侧凹陷的曲面。
另一方面，提供一种彩膜基板，所述彩膜基板包括衬底和上述任一实施例中的彩膜结构。彩膜结构设置于所述衬底上，且所述彩膜结构的反射层设置于所述彩膜结构的黑矩阵远离所述衬底的一侧。
又一方面，提供一种上述彩膜基板的制作方法，所述制作方法包括：在衬底上制作具有多个开口的黑矩阵；在所述黑矩阵远离所述衬底的一侧制作反射层；制作彩膜层。其中，所述反射层在所述衬底上的正投影被所述黑矩阵在所述衬底上的正投影覆盖；所述彩膜层包括多个滤光部， 每个滤光部的至少一部分位于所述黑矩阵的一个开口内。
在一些实施例中，所述在所述黑矩阵远离所述衬底的一侧制作反射层，包括：在所述黑矩阵远离所述衬底的一侧制作初始反射层；对所述初始反射层远离所述衬底的表面进行表面处理，使该表面形成用于对光线进行散射的微结构，或者至少一个向所述黑矩阵一侧凹陷的曲面。其中，所述初始反射层在所述衬底上的正投影被所述黑矩阵在所述衬底上的正投影覆盖。
又一方面，提供一种显示模组，包括发光基板和上述彩膜基板。所述发光基板为有机电致发光显示模组，或者所述发光基板包括背光模组、阵列基板和液晶层；所述发光基板包括多个子像素发光区。所述彩膜基板与所述发光基板叠加设置，所述彩膜基板的黑矩阵的一个开口与一个子像素发光区对应。在所述发光基板为有机电致发光显示模组的情况下，所述彩膜基板的黑矩阵、彩膜层和反射层相对于其衬底靠近所述发光基板；在所述发光基板包括背光模组、阵列基板和液晶层的情况下，所述阵列基板、所述液晶层和所述彩膜基板形成液晶盒，所述背光模组设置于所述阵列基板远离所述彩膜基板的一侧。
又一方面，提供另一种显示模组，包括发光基板和上述任一实施例中所述的彩膜结构。所述发光基板为有机电致发光显示模组；所述发光基板包括多个子像素发光区。所述彩膜结构直接设置于发光基板的封装层上，且所述彩膜结构的反射层相对于其黑矩阵靠近所述发光基板；所述彩膜基板的黑矩阵的一个开口与一个子像素发光区对应。
又一方面，提供一种上述显示模组的制作方法，所述制作方法包括：在发光基板的封装层上制作反射层；在所述反射层远离所述发光基板的一侧制作黑矩阵；制作彩膜层。其中，所述反射层在所述发光基板上的正投影被所述黑矩阵在所述发光基板上的正投影覆盖；所述彩膜层包括多个滤光部，每个滤光部的至少一部分位于所述黑矩阵的一个开口内。
在一些实施例中，所述反射层远离所述发光基板的表面具有用于对光线进行散射的微结构，或者包括至少一个向所述黑矩阵一侧凹陷的曲面。所述在发光基板的封装层上制作反射层之前，所述制作方法还包括：在所述发光基板的封装层上制作基底结构。其中，所述基底结构远离所述发光基板的表面形貌，与所述反射层远离所述发光基板的表面形貌相适应，以在后续制作所述反射层的步骤中，使反射层远离所述发光基板的表面形成用于对光线进行散射的微结构，或者至少一个向所述黑矩阵 一侧凹陷的曲面。
又一方面，提供一种显示装置，包括上述任一实施例中的显示模组。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1为相关技术中的一种彩膜结构的示意图；
图2为根据一些实施例的彩膜结构的俯视图；
图3为图2中沿剖面线A-A的剖视图；
图4A为根据一些实施例的反射层为单层膜结构时的一种示意图；
图4B为根据一些实施例的反射层为单层膜结构时的另一种示意图；
图5为根据一些实施例的反射层的示意图；
图6为图5中沿剖面线B-B的剖视图；
图7A为根据一些实施例的反射层包括多个膜层的一种示意图；
图7B为根据一些实施例的反射层包括多个膜层的另一种示意图；
图7C为根据一些实施例的反射层包括多个膜层的又一种示意图；
图8为根据一些实施例的彩膜基板的示意图；
图9为根据一些实施例的彩膜基板的制作方法的流程图；
图10为根据一些实施例的彩膜基板的制作步骤示意图；
图11为根据一些实施例的显示模组的一种示意图；
图12为根据一些实施例的显示模组的另一种示意图；
图13为根据一些实施例的显示模组的又一种示意图；
图14为根据一些实施例的显示模组的制作方法的流程图；
图15为根据一些实施例的显示模组的制作步骤示意图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包 括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一些实施例(some embodiments)”、“示例的(example)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
本文参阅作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中，为了清楚，放大了层和区域的厚度。因此，可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此，示例性实施方式不应解释为局限于本文示出的区域的形状，而是包括因例如制造而引起的形状偏差。例如，示为矩形的蚀刻区域通常将具有弯曲的特征。因此，附图中所示的区域本质上是示意性的，且它们的形状并非旨在示出设备的区域的实际形状，并且并非旨在限制示例性实施方式的范围。
在本文中，使用了“A在衬底上的正投影覆盖B在衬底上的正投影”这样的表述，其是指A在衬底上的正投影与B在衬底上的正投影的边界重合，或者，A在衬底上的正投影与B在衬底上的正投影的边界至少部分不重合，且B在衬底上的正投影位于A在衬底上的正投影范围之内。
在相关技术中，参阅图1，彩膜结构01设置于发光基板02的出光侧；彩膜结构01包括黑矩阵011和彩膜层012，黑矩阵011具有多个开口013，彩膜层012位于黑矩阵011的开口013内。上述结构存在如下问题：发光基板02发出的光线中的部分射向黑矩阵011所在的区域，并被黑矩阵011吸收，增加了发光基板02发出的光的光量损失，降低了整个显示模组的出光量，降低了发光基板02发出光线的传输效率。
基于上述问题，本公开的一些实施例提供一种彩膜结构10，参阅图2和 图3，彩膜结构10包括黑矩阵11、彩膜层12以及反射层13。黑矩阵11具有多个开口111，彩膜层12包括多个滤光部121，每个滤光部121的至少一部分位于黑矩阵11的一个开口111内，例如每个滤光部121全部位于黑矩阵11的一个开口111内，又如每个滤光部121的主体部分位于黑矩阵11的一个开口111内，边界搭接在黑矩阵11上。示例性的，参阅图3，一个滤光部121位于黑矩阵11的一个开口111内。黑矩阵11被配置为遮挡发光基板200中反射率高的结构，同时吸收自然光，以降低彩膜结构10被配置为远离发光基板200的表面的光线反射率，增加显示模组的对比度，改善显示模组的显示效果。
参阅图3，反射层13位于黑矩阵11被配置为靠近发光基板200的一侧，且反射层13能够将且反射层13在黑矩阵11所在平面上的正投影被黑矩阵11覆盖，以保证反射层13不影响子像素的开口率。
反射层13被配置为，将发光基板200射向黑矩阵11的光线中的至少一部分反射回发光基板200，以使其中至少一部分光线经彩膜层12射出。参阅图3，发光基板200发出的、射向黑矩阵11所在区域的光线中的部分，被反射层13反射后射向发光基板200一侧；射向发光基板200一侧的光线中的部分，被发光基板200再次反射；这样，原本射向黑矩阵11的部分光线在反射层13与发光基板200之间被至少一次往返反射，因而光线的传播方向被改变，使得部分光线最终由彩膜层12射出，从而减少了黑矩阵11吸收发光基板200发出的光线量，增加了由彩膜层12出射的出光量，提升了发光基板200的光线传输效率。
需要说明的是，发光基板200中具有一些光线反射率较高的结构，例如薄膜晶体管、信号线；又如，在发光基板200为有机电致发光显示模组(Organic Light-Emitting Diode，简称OLED)显示基板的情况下，其所包括的阳极和/或阴极也能够反射光线；再如，在发光基板200为液晶显示模组(Liquid Crystal Display，简称LCD)的情况下，其所包括的背光模组也能够反射光线。这些反射率较高的结构能够将被反射层13反射回发光基板200的光线中的一部分，反射至彩膜层12，并经彩膜层12射出，从而减少发光基板200射向黑矩阵11的光线的损耗，提升彩膜层12的出光率，提高彩膜结构10的出光率，提升显示模组100的显示效果。
示例性的，在发光基板200为OLED显示基板的情况下，参阅图11，发光基板200内至少包括反射率较高的阳极63和/或阴极65；经反射层13反射回发光基板200的光线中的部分光线，会照射到发光基板200的阳极63和阴 极65上，经发光基板200的阳极63和/或阴极65反射后，部分光线会射向彩膜结构10的彩膜层13，并从彩膜层13射出。
示例性的，在彩膜结构10和发光基板200属于液晶显示模组，彩膜结构10属于液晶显示模组的彩膜基板，发光基板200包括液晶显示模组的背光模组、阵列基板和液晶层的情况下，发光基板200内至少包括反射率较高背光模组，经反射层13反射回发光基板200的光线中的部分光线，会照射到发光基板200的背光模组上，经发光基板200的背光模组反射后，部分光线会射向彩膜层13，并从彩膜层13射出。
需要说明的是，本公开的一些实施例中以反射层13直接与黑矩阵11直接接触为例进行说明。在其他一些实施例中，反射层13直接与黑矩阵11之间也可以设置其他膜层结构，在此不做具体限定。
反射层13在黑矩阵11所在平面的覆盖面积会影响到反射层13的整体反射率。参阅图3，反射层13在黑矩阵11所在平面上的正投影与黑矩阵11完全重合，以使发光基板200发出的射向黑矩阵11的全部光线，都能够经反射层13反射，提高反射层13的反射面积，从而提高反射层13的反射率，减少黑矩阵11对发光基板200发出的光线的光量损耗。
在一些实施例中，参阅图3和图5，反射层13具有多个透光孔131，每个透光孔131与一个黑矩阵11的开口111对应。每个透光孔131在黑矩阵11所在平面上的正投影的边界，和与之对应的开口111的边界重合，或者位于与之对应的开口111的边界之外，以使反射层13被黑矩阵11全部覆盖，防止外界(黑矩阵11被配置为远离发光基板200的一侧)光线照射到反射层13上，避免显示模组100表面的光线反射率升高。
在每个透光孔131在黑矩阵11所在平面上的正投影的边界，和与之对应的开口111的边界重合的情况下，反射层13在黑矩阵11上的正投影与黑矩阵11完全重合。
在每个透光孔131在黑矩阵11所在平面上的正投影的边界，位于与之对应的开口111的边界之外的情况下，反射层13在黑矩阵11上的正投影位于黑矩阵11的范围之内，且反射层13在黑矩阵11上的正投影面积小于黑矩阵11的面积。
在一些实施例中，参阅图4A，反射层13的被配置为靠近发光基板200的表面为平面。示例性的，反射层13可直接通过蒸镀或者涂覆工艺制作得到，工艺简单；且不需要对反射层13的被配置为靠近发光基板200的表面作后期处理，节约成本。同时，该平面具有镜面反射的作用，对光线的反射效率高。
在一些实施例中，参阅图4B，反射层13被配置为靠近发光基板200的表面具有用于对光线进行散射的微结构132。示例性的，微结构132包括锯齿形结构，波浪形结构，和呈阵列排布的柱状结构、锥状结构或球状结构中的至少一种；其中，图4B中，仅示例性的表达了微结构为锯齿结构时的示意图。反射层13被配置为靠近显示基板110的表面上的微结构132，使反射层13具有漫反射效果，进而使发光基板200的一个子像素发光区射出的光线中射向反射层13的部分，最终能够由该子像素发光区对应的滤光部121射出；避免经反射层13和发光基板200反射后的部分光线由相邻子像素发光区对应的滤光部121射出，防止相邻子像素发光区出现混光现象，提升显示装置的对比度，增强显示装置的显示效果。
示例性的，微结构132可以在反射层13被配置为靠近发光基板200的表面上呈周期性排列；比如，参阅图4B，反射层13表面的微结构132可以为多个间距相等的条状结构。条状结构与反射层13一体成型；参阅图4B，条状结构的截面为尖角结构(对应锯齿形结构)。或者，条状结构的截面平滑曲面结构(对应波浪形结构)。
在一些实施例中，参阅图5和图6，反射层13被配置为靠近发光基板200的表面包括至少一个向黑矩阵11一侧凹陷的曲面133，使每个子像素发光区发出的光线尽可能多地被反射至发光基板200的该子像素发光区及其周边的区域，并最终从该子像素发光区对应的滤光部121射出。曲面133的数量、形状以及位置关系可以根据具体的反射率要求选择性设定，此处不作具体限定。
在此基础上，示例性的，参阅图6，反射层13中位于黑矩阵11的相邻两个开口111之间的部分中，被配置为靠近发光基板200的表面(图6中反射层13的下表面)包括两个向黑矩阵11一侧(图6中的上侧)凹陷的曲面133，两个曲面133相对于黑矩阵11的相邻两个开口111之间的间隙区域沿参考方向(图6中的水平方向)的平分线L1对称设置；其中，参考方向为垂直于相邻两个开口111的排列方向的方向。
沿黑矩阵11的相邻两个开口11的排列方向(图6中的水平方形)，由相邻两个开口111中的任一开口111指向平分线L1的方向(图6中，滤光部121指向虚线L1的方向，即箭头M所示的方向)，反射层13中位于相邻两个开口111之间的部分的厚度逐渐增大。即，由相邻两个开口111中的任一开口111指向平分线L1的方向，反射层13被配置为靠近发光基板200的表面逐渐向远离黑矩阵11的方向弯曲。
这样，两个曲面133形成两个弧形反射面，两个弧形反射面具有各自朝向其相邻的子像素发光区的形式，从而能够进一步提高对原本射向黑矩阵11的光线反射效率，并使这部分光线更多地经彩膜层12射出。同时，能够减小反射层13将光线反射至相邻的子像素发光区的概率，避免从一个子像素发光区发出的光线经反射层13和发光基板200反射后，从相邻子像素发光区对应的滤光部121射出。其中，各曲面133的圆心角可根据实际情况设置。
在一些实施例中，沿透光孔131排列的行的方向，任意相邻两个透光孔131之间的反射层13具有两个上述曲面133；沿透光孔131排列的列的方向，任意相邻两个透光孔131之间的反射层13具有两个上述曲面133。
示例性的，在反射层13具有多个透光孔131的情况下，参阅图5和图6，反射层13被配置为靠近发光基板200的表面包括多个向黑矩阵11一侧凹陷的曲面133，每个曲面133围绕一个透光孔131，使反射层13形成类似于反射罩的结构。一个透光孔131与发光基板200的一个子像素发光区相对应，子像素发出的光线射向以透光孔131为中心的区域内，每个曲面133围绕一个透光孔131，使一个子像素发光区发出的光线中，射向透光孔131周围的光线，绝大部分经环绕透光孔131的曲面133反射至发光基板200上该子像素发光区及其周围的区域，并由该子像素发光区对应的滤光部121射出。
在一些实施例中，反射层13的反射率大于或等于90％，以使射向反射层13的光线中的大部分能够被反射层13反射，随着反射层13的反射率的增加，反射层13的反射效果逐渐增强，彩膜结构10的出光效率逐渐升高。示例性的，反射层13的反射率可以为90％、92％或93.5％等。
需要理解的是，上述实施例中，反射层13的反射率大于或等于90％是一种可选的具体实施方式，而非唯一可行的实施例。比如，反射层13的反射率也可以小于90％。
在上述各实施例的基础上，反射层13可以为单层结构或者多层膜结构。
在一些实施例中，参阅图4A和图4B，反射层13可以为单层膜结构。反射层13可以通过蒸镀沉积、溅射或者涂覆的方式制作得到，单层膜结构制作工艺简单。
在反射层13为单层膜结构的情况下，反射层13的材料包括银、镁、铜和铝中的至少一种。上述金属材料的反射率高，可以满足对反射层13整体反射率的需求。
在一些实施例中，参阅图7A～7C，反射层13包括多个沿彩膜结构10的厚度方向层叠设置的膜层14，且任意相邻的两个膜层14之间的折射率差值大 于或等于0.3，以增强光线在相邻两个膜层14之间的接触面上的反射率，提升反射层13整体的反射率。反射层13包括多个膜层14，可以在发射层13的反射率满足要求的前提下，各膜层14采用成本较低的非金属材料制得，从而降低彩膜结构10的制作成本。
示例性的，在反射层13包括的膜层14的数量大于或等于四层时(例如反射层13包括四个膜层14)，相邻的两个膜层14之间的折射率差值大于或等于0.3。示例性的，沿彩膜结构10的厚度方向，且从黑矩阵11指向反射层13的方向，各膜层14的折射率可以逐渐升高(例如，各膜层14的折射率依次为：1.8、2.1、2.5、2.8)；或者逐渐降低(例如，各膜层14的折射率依次为：2.5、2.2、1.7、1.4)；或者各膜层14的折射率呈波动变化，(例如，各膜层14的折射率依次为：1.8、2.2、1.9、1.5)。
反射层13所包含的多个膜层14沿彩膜结构10的厚度方向叠加，并且相邻的膜层14之间紧密贴合，各膜层14均可采用蒸镀沉积、PECVD(Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积)或者涂覆的方法制作，在此不做具体限定。
为了进一步提升反射层13所包含的膜层14的反射率，反射层13中至少一个膜层14的厚度为目标波长的1/4的整数倍；其中，目标波长为根据发光基板100所发出的光线的波长范围设定的参考值。根据布拉格反射镜原理，当膜层14的厚度为目标波长的1/4的整数倍时，该膜层14对应的反射率最大，从而增强反射效果，尽可能地避免光线被黑矩阵11吸收。
需要说明的是，发光基板100所发出的光线的波长范围设定的参考值可以为：发光基本110实际发出的光线中，占比最高的光线的波长值；示例性的，发光基本110实际发出的光线的波长在500nm～600nm之间，其中，波长为550nm的光线占比最高，则，发光基板100所发出的光线的波长范围设定的参考值为550nm。此时，目标波长的1/4的整数倍为M×(550÷4)nm＝M×137.5nm。其中，M为正整数。
反射层13中至少一个膜层14的厚度为目标波长的1/4的整数倍，例如，反射层13所包含的多个膜层14中，被配置为靠近反射基板110的一个膜层14的厚度为目标波长的1/4的整数倍；或者，反射层13所包含的多个膜层14中，每个膜层14的厚度均为目标波长的1/4的整数倍。
在一些实施例中，反射层13所包括的多个膜层14包括交替设置的第一膜层141和第二膜层142。第一膜层的材料包括氧化硅和/或聚酰亚胺，第二膜层的材料包括氮化硅。相较于反射层13所包括的多个膜层14均采用不同 材料，本实施例中，制作反射层13时，可以交替形成第一膜层141和第二膜层142，制作工艺简单。
示例性的，参阅图7A～7C，反射层13由四层膜层14叠加而成，其中包括两层第一膜层141和两层第二膜层142，第一膜层141与第二膜层142交替形成。比如，距离黑矩阵11最近的膜层14为第一膜层141，且第一膜层141与黑矩阵11贴合，反射层13所包含的多个膜层中，由黑矩阵11指向发光基板200的方向依次为：第一膜层141、第二膜层142、第一膜层141以及第二膜层142。其中，第一膜层141由折射率相对较低的氧化硅膜层或者聚酰亚胺膜层，第二膜层122为折射率相对较高的氮化硅膜层，而且氧化硅膜层、聚酰亚胺膜层以及氮化硅膜层均属于非金属膜层，相对于金属膜层来说制作成本较低。
在一些实施例中，参阅图7A，反射层13所包含的每个膜层14被配置为靠近发光基板200的表面可以为平面。每个膜层14都可直接通过蒸镀或者涂覆工艺制作得到，工艺简单；且不需要对膜层14的被配置为靠近发光基板200的表面作后期处理，节约成本。同时，该平面具有镜面反射的作用，对光线的反射效率高。
在一些实施例中，参阅图7B，反射层13所包含的每个膜层14中被配置为靠近发光基板200的至少一个膜层14，被配置为靠近发光基板200的表面具有用于对光线进行散射的微结构132；或者，参阅图7C，反射层13所包含的每个膜层14的被配置为靠近发光基板200的表面均具有用于对光线进行散射的微结构132。这样，使反射层13具有漫反射效果，进而使发光基板200的一个子像素发光区射出的光线中射向反射层13的部分，最终能够由该子像素发光区对应的滤光部121射出；防止相邻子像素发光区出现混光现象，提升显示装置的对比度，增强显示装置的显示效果。其中，微结构132包括锯齿形结构，波浪形结构，和呈阵列排布的柱状结构、锥状结构或球状结构中的至少一种。
在一些实施例中，参阅图7A，反射层13被配置为远离发光基板200的表面(图7A中反射层13的上表面)为平面，不需要对反射层13被配置为远离发光基板200的表面作后期处理，节约成本。
在一些实施例中，参阅图7C，反射层13被配置为远离发光基板200的表面(图7C中反射层13的上表面)具有用于对光线进行散射的微结构134，微结构134包括锯齿形结构，波浪形结构，和呈阵列排布的柱状结构、锥状结构或球状结构中的至少一种；其中，图7C中，仅示例性的表达了微结构为 锯齿结构时的示意图。或者，反射层13被配置为远离发光基板200的表面包括至少一个向黑矩阵一侧凹陷的曲面。
反射层13被配置为远离发光基板200的表面具有用于对光线进行散射的微结构132，或者反射层13被配置为远离发光基板200的表面包括至少一个向黑矩阵11一侧凹陷的曲面，使反射层13被配置为靠近显示基板110的表面具有漫反射效果，当外界有强光照射到彩膜结构10被配置为远离发光基板200的一侧时，光线穿过黑矩阵11，并经反射层13反射至黑矩阵11之外的区域，降低黑矩阵11所在区域的反射率，提升强光照射下，显示模组10的对比度，提升显示模组10在强光下的显示效果。
本公开实施例所提供的的彩膜结构10可以单独设置于衬底上，形成彩膜基板。由此，在一些实施例中，提供一种彩膜基板100，参照图8，包括衬底20和设置于衬底20上的彩膜结构10，彩膜结构10可以为上述任何的一个或多个实施例或示例相结合得到的彩膜结构10，其具体特征、结构、材料或者特点在此不再赘述。其中，彩膜结构10的反射层13设置于彩膜结构10的黑矩阵11远离衬底20的一侧，使彩膜基板120与发光基板200组合形成显示模组100时，彩膜结构10的反射层13位于其黑矩阵11的被配置为靠发光基板100的一侧。
参阅图9和图10，上述彩膜基板的制作方法包括S110～S130。
S110，在衬底20上制作具有多个开口111的黑矩阵11。
S120，在黑矩阵11远离衬底20的一侧制作反射层13。
其中，反射层13在衬底20上的正投影被黑矩阵11在衬底20上的正投影覆盖。示例性的，可以采用蒸镀、气相沉积、溅射、涂覆等工艺制作反射层13。
S130，制作彩膜层12。
其中，彩膜层12包括多个滤光部121，每个滤光部121的至少一部分位于黑矩阵11的一个开口111内。
在一些实施例中，在反射层13被配置为靠近发光基板200的表面具有用于对光线进行散射的微结构132，或者反射层13被配置为靠近发光基板200的表面具有至少一个向所述黑矩阵一侧凹陷的曲面的情况下，参阅图9和图10，S120(在黑矩阵11远离衬底20的一侧制作反射层13)包括S121～S122。
S121，在黑矩阵11远离衬底20的一侧制作初始反射层130；其中，初始反射层130在衬底20上的正投影被黑矩阵11在衬底20上的正投影覆盖。
S122，对初始反射层130远离衬底20的表面进行表面处理，使该表面形 成用于对光线进行散射的微结构132，或者至少一个向黑矩阵11一侧凹陷的曲面。(彩膜基板中的其它膜层的制作过程此处不作具体介绍)。
其中，微结构13或者向黑矩阵11一侧凹陷的曲面可以通过刻蚀、离子轰击或者溅射工艺制作成型，根据不同的结构选择不同的制作工艺。微结构132和曲面的具体特征、结构、材料或者特点参照上述各实施例中关于彩膜结构10的描述，此处不再详细赘述。
在一些实施例中，反射层13为单层膜结构，在此情况下，可以在黑矩阵11远离衬底20的一侧形成一层薄膜，然后图案化该层薄膜形成多个透光孔131，从而形成反射层13。
示例性的，在反射层13为单层膜结构，且其远离衬底20的表面为呈周期性变化的锯齿形结构的情况下，参阅图10，可首先在黑矩阵11的表面蒸镀形成初始反射层，初始反射层远离衬底20的表面为平面；然后，利用刻蚀(包括涂覆光刻胶、显影、刻蚀以及剥离等)工艺对反射层13的表面进一步处理，从而在反射层13远离衬底20的表面形成具有锯齿形结构的表面结构。
在一些实施例中，反射层13为多层膜结构，在此情况下，可以在黑矩阵11远离衬底20的一侧依次形成多层薄膜，然后图案化该多层薄膜形成多个透光孔131，从而形成反射层13。
示例性的，在反射层13包括多个沿彩膜结构10的厚度方向层叠设置的膜层14，且其远离衬底20的表面具有用于对光线进行散射的微结构132的情况下，可以在形成第一层薄膜之后，对第一层薄膜的远离黑矩阵11的表面进行处理，使其具有用于对光线进行散射的微结构132，或至少一个向黑矩阵11一侧凹陷的曲面。这样，在后续的膜层14制作过程中(比如，用蒸镀工艺形成后续膜层14)，可以使每个膜层14均具有与上述第一层薄膜相同的微结构132，或至少一个向黑矩阵11一侧凹陷的曲面。
或者，在反射层13包括多个沿彩膜结构10的厚度方向层叠设置的膜层14的情况下，也可以只对距离黑矩阵11最远的一个或多个膜层14进行处理，使反射层13所包含的多个膜层14中，远离黑矩阵11的一个或多个膜层14的远离黑矩阵11的表面，具有用于对光线进行散射的微结构132，或至少一个向黑矩阵11一侧凹陷的曲面。
上述彩膜基板100可以应用于液晶显示模组(Liquid Crystal Display，简称LCD)中，也可以应用于主动发光显示模组中。主动发光显示模组可以为电致发光显示模组或光致发光显示模组。在该显示模组为电致发光显示模组的情况下，电致发光显示模组可以为有机电致发光显示模组(Organic  Light-Emitting Diode，简称OLED)或量子点电致发光显示模组(Quantum Dot Light Emitting Diodes，简称QLED)。在该显示模组为光致发光显示模组的情况下，光致发光显示模组可以为量子点光致发光显示模组。
在上述彩膜基板100应用于液晶显示模组中的情况下，在一些实施例中，参阅图11，提供一种显示模组1001，该显示模组1001为液晶显示模组，包括叠加设置的发光基板200和上述任意实施例中的彩膜基板100。发光基板200包括多个子像素发光区201；彩膜基板100的黑矩阵11的一个开口111与一个子像素发光区201对应。
参阅图11，液晶显示模组的发光基板200包括背光模组30、阵列基板40以及液晶层50，其中，阵列基板40、液晶层50和彩膜基板100组成液晶盒202。背光模组30设置于阵列基板40远离彩膜基板100的一侧。背光模组30用于为阵列基板40提供光源。
如图11所示，阵列基板40的每个子像素均设置有位于第一衬底41上的薄膜晶体管42和像素电极43。薄膜晶体管42包括有源层423、源极424、漏极425、栅极421及栅绝缘层422，源极424和漏极425分别与有源层423接触，像素电极43与薄膜晶体管42的漏极电连接。
在一些实施例中，阵列基板40还包括设置在第一衬底41上的公共电极44。像素电极43和公共电极44可以设置在同一层，在此情况下，像素电极43和公共电极44均为包括多个条状子电极的梳齿结构。像素电极43和公共电极44也可以设置在不同层，在此情况下，如图11所示，像素电极43和公共电极44之间设置有第一绝缘层45。在公共电极44设置在薄膜晶体管42和像素电极43之间的情况下，如图11所示，公共电极44与薄膜晶体管42之间还设置有第二绝缘层46。
如图11所示，彩膜基板100包括设置在衬底20上的彩膜层12，其中，彩膜层12至少包括红色滤光部、绿色滤光部以及蓝色滤光部，红色滤光部、绿色滤光部以及蓝色滤光部分别与阵列基板40上的子像素一一正对。彩膜基板100还包括设置在衬底20上的黑矩阵11，黑矩阵11用于将红色滤光部、绿色滤光部以及蓝色滤光部间隔开。
在一些实施例中，如图11所示，显示模组1001还包括设置在彩膜基板100远离液晶层50一侧的第一偏光片47、设置在第一偏光片47远离彩膜基板100一侧的盖板玻璃300以及设置在阵列基板40远离液晶层50一侧的第二偏光片48。
在上述彩膜基板100应用于主动发光显示模组中的情况下，在一些实施 例中，参阅图12，提供另一种显示模组1002，该显示模组为OLED显示模组，包括叠加设置的发光基板200和上述任意实施例中的彩膜基板100；发光基板200为OLED显示基板。彩膜基板100的黑矩阵11、彩膜层12和反射层13相对于其衬底20靠近发光基板200。发光基板200包括多个子像素发光区201；彩膜基板100的黑矩阵11的一个开口111与一个子像素发光区201对应。
参阅图12，显示模组1002的发光基板200主要结构包括依次设置的显示用基板60和用于封装显示用基板60的封装层70；封装层70可以为封装薄膜，也可以为封装基板。其中，彩膜基板100设置于封装层70远离显示用基板60的一侧。
如图12所示，上述显示用基板60的每个子像素包括设置在第二衬底61上的发光器件和驱动电路，驱动电路包括多个薄膜晶体管62。发光器件包括阳极63、发光功能层64以及阴极65，阳极63和多个薄膜晶体管62中作为驱动晶体管的薄膜晶体管62的漏极电连接。
薄膜晶体管62包括有源层621、源极622、漏极623、栅极624及栅绝缘层625，源极622和漏极623分别与有源层621接触，阳极63与薄膜晶体管42的漏极623电连接。
显示用基板60还包括像素界定层66，像素界定层66包括多个开口区，一个发光器件设置在一个开口区中。在一些实施例中，发光功能层64包括发光层。在另一些实施例中，发光功能层64除包括发光层外，还包括电子传输层(election transporting layer，简称ETL)、电子注入层(election injection layer，简称EIL)、空穴传输层(hole transporting layer，简称HTL)以及空穴注入层(hole injection layer，简称HIL)中的一层或多层。
如图12所示，显示用基板60还包括设置在薄膜晶体管111和阳极63之间的平坦层67。
当显示模组为电致发光显示模组或光致发光显示模组时，显示模组可以是顶发射型显示模组，在此情况下，靠近第二衬底61的阳极63不透明，远离第二衬底61的阴极65透明或半透明；显示模组也可以或者是底发射型显示模组，在此情况下，靠近第二衬底61的阳极63透明或半透明，远离第二衬底61的阴极65不透明；显示模组也可以或者是双面发光型显示装置，在此情况下，靠近第二衬底61的阳极63和远离第二衬底61的阴极65均透明或半透明。
参阅图12，OLED显示模组还包括设置于彩膜基板100远离发光基板200一侧的偏光片68、第一光学胶(Optically Clear Adhesive，简称OCA)69和 盖板玻璃300。
本公开实施例所提供的彩膜结构10还可以直接设置于有机电致发光基板的封装层70上。由此，在一些实施例中，参阅图13，提供一种显示模组1003，该显示模组1003为OLED显示模组，包括发光基板200和上述任一实施例中的彩膜结构10，发光基板200为有机电致发光基板。彩膜结构10的反射层13相对于其黑矩阵11靠近发光基板200；彩膜基板10的黑矩阵11的一个开口111与一个子像素发光区201对应。
显示模组1003的发光基板200与显示模组1002的发光基板200的结构相似，在此不再赘述。
本公开的任一实施例提供的显示模组，包括具有反射层13的彩膜结构10，反射层13位于黑矩阵11与发光基板200之间，该反射层13在不影响黑矩阵11吸收自然光降低显示模组100的出光面的反射率的同时，能够反射发光基板200照射到黑矩阵11区域的光线，将部分光线反射至发光基板200上，然后经发光基板200反射后，部分光线经彩膜层130射出，从而避免射向黑矩阵11的光线直接被黑矩阵11吸收，减少黑矩阵11对发光基板200的光能量损耗，提升显示模组100的出光效率，以及显示模组100的显示效果。
参阅图14和图15，上述显示模组1003的制作方法包括S210～S230。
S210，在发光基板200的封装层上制作反射层13。
S220，在反射层13远离发光基板200的一侧制作黑矩阵11。
其中，反射层13在发光基板200上的正投影被黑矩阵11在发光基板200上的正投影覆盖。
S230，制作彩膜层12。
其中，彩膜层12包括多个滤光部121，每个滤光部121的至少一部分位于黑矩阵11的一个开口111内。
在一些实施例中，在反射层13靠近发光基板200的表面具有用于对光线进行散射的微结构132，或者包括至少一个向黑矩阵11一侧凹陷的曲面的情况下，参阅图14和图15，在S210(在发光基板100的封装层上制作反射层13)之前还包括：
S211，在发光基板200的封装层上制作基底结构203；其中，基底结构203远离发光基板200的表面形貌，与反射层13靠近发光基板200的表面形貌相适应，以在后续制作反射层13的步骤中，使反射层13靠近发光基板200的表面形成用于对光线进行散射的微结构132，或者至少一个向黑矩阵11一侧凹陷的曲面。
例如，参阅图15，在发光基板200的封装层(一般为氮化硅)的表面进行预处理，即预先对封装层的表面进行刻蚀或者离子轰击等，制作出与微结构132或者至少一个向黑矩阵11一侧凹陷的曲面的相适应的基底结构203(如：规则布置的沟槽、阵列布置的凹槽或者凸起的曲面结构等)。或者，在封装层的表面先沉积一层基底，然后对基底的表面进行预处理，制作出与微结构132或者至少一个向黑矩阵11一侧凹陷的曲面的相适应的基底结构203。
然后，在基底结构1102上直接通过蒸镀、气相沉积、溅射或涂覆等工艺制作反射层13，反射层13可以是单层膜结构，或者反射层13包括多个沿发光基板200厚度方向层叠设置的膜层14。
本公开的一些实施例提供了一种显示装置，包括上述任一实施例中的显示模组，该显示模组中包括具有反射层13的彩膜结构10，该反射层13在不影响黑矩阵11吸收自然光，降低显示模组100的出光面的反射率的同时，能够反射发光基板200射向黑矩阵11区域的光线，将部分光线反射至发光基板200上，然后经发光基板200反射后，部分光线经彩膜层130射出，减少黑矩阵11对发光基板200的光量损耗，从而改善显示装置200的产品性能，提高显示装置200光线的传输效率。
显示装置可以为电视机、显示器、笔记本电脑、平板电脑、手机、导航仪等任何具有显示功能的产品或者部件。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种彩膜结构，包括：
    黑矩阵，具有多个开口；
    彩膜层，包括多个滤光部，每个滤光部的至少一部分位于所述黑矩阵的一个开口内；
    反射层，位于所述黑矩阵被配置为靠近发光基板的一侧，且所述反射层在所述黑矩阵所在平面上的正投影被所述黑矩阵覆盖；所述反射层被配置为，将所述发光基板射向所述黑矩阵的光线中的至少一部分反射回所述发光基板，以使其中至少一部分光线经所述彩膜层射出。
  2. 根据权利要求1所述的彩膜结构，其中，所述反射层在所述黑矩阵所在平面上的正投影与所述黑矩阵完全重合。
  3. 根据权利要求1或2所述的彩膜结构，其中，所述反射层具有多个透光孔，每个透光孔与一个开口对应；
    每个透光孔在所述黑矩阵所在平面上的正投影的边界，和与之对应的开口的边界重合，或者位于与之对应的开口的边界之外。
  4. 根据权利要求1～3中任一项所述的彩膜结构，其中，所述反射层被配置为靠近所述发光基板的表面为平面；或者，
    所述反射层被配置为靠近所述发光基板的表面具有用于对光线进行散射的微结构，所述微结构包括锯齿形结构，波浪形结构，和呈阵列排布的柱状结构、锥状结构或球状结构中的至少一种；或者，
    所述反射层被配置为靠近所述发光基板的表面包括至少一个向所述黑矩阵一侧凹陷的曲面。
  5. 根据权利要求4所述的彩膜结构，其中，所述反射层中位于所述黑矩阵的相邻两个开口之间的部分中，被配置为靠近所述发光基板的表面包括两个向所述黑矩阵一侧凹陷的曲面，两个所述曲面相对于所述相邻两个开口之间的间隙区域沿参考方向的平分线对称设置；所述参考方向为垂直于所述相邻两个开口的排列方向的方向；
    沿所述相邻两个开口的排列方向，且由所述相邻两个开口中的任一开口指向所述平分线的方向，所述反射层中位于所述相邻两个开口之间的部分的厚度逐渐增大。
  6. 根据权利要求4或5所述的彩膜结构，其中，在所述反射层具有多个透光孔的情况下，所述反射层被配置为靠近所述发光基板的表面包括多个向所述黑矩阵一侧凹陷的曲面，每个曲面围绕一个透光孔。
  7. 根据权利要求1～6中任一项所述的彩膜结构，其中，所述反射层为单 层膜结构。
  8. 根据权利要求7所述的彩膜结构，其中，所述反射层的材料包括银、镁、铜和铝中的至少一种。
  9. 根据权利要求1～6中任一项所述的彩膜结构，其中，所述反射层包括多个沿所述彩膜结构的厚度方向层叠设置的膜层，且任意相邻的两个膜层之间的折射率差值大于或等于0.3。
  10. 根据权利要求9所述的彩膜结构，其中，所述反射层中至少一个膜层的厚度为目标波长的1/4的整数倍；
    其中，所述目标波长为根据所述发光基板所发出的光线的波长范围设定的参考值。
  11. 根据权利要求9或10所述的彩膜结构，其中，所述反射层所包括的多个膜层包括交替设置的第一膜层和第二膜层；
    所述第一膜层的材料包括氧化硅和/或聚酰亚胺，所述第二膜层的材料包括氮化硅。
  12. 根据权利要求1～11中任一项所述的彩膜结构，其中，所述反射层被配置为远离所述发光基板的表面为平面；或者，
    所述反射层被配置为远离所述发光基板的表面具有用于对光线进行散射的微结构，所述微结构包括锯齿形结构，波浪形结构，和呈阵列排布的柱状结构、锥状结构或球状结构中的至少一种；或者，
    所述反射层被配置为远离所述发光基板的表面包括至少一个向所述黑矩阵一侧凹陷的曲面。
  13. 一种彩膜基板，包括：
    衬底；
    如权利要求1～12中任一项所述的彩膜结构，设置于所述衬底上，所述彩膜结构的反射层设置于所述彩膜结构的黑矩阵远离所述衬底的一侧。
  14. 一种如权利要求13所述的彩膜基板的制作方法，包括：
    在衬底上制作具有多个开口的黑矩阵；
    在所述黑矩阵远离所述衬底的一侧制作反射层；其中，所述反射层在所述衬底上的正投影被所述黑矩阵在所述衬底上的正投影覆盖；
    制作彩膜层；其中，所述彩膜层包括多个滤光部，每个滤光部的至少一部分位于所述黑矩阵的一个开口内。
  15. 根据权利要求14所述的制作方法，其中，所述在所述黑矩阵远离所述衬底的一侧制作反射层，包括：
    在所述黑矩阵远离所述衬底的一侧制作初始反射层；其中，所述初始反射层在所述衬底上的正投影被所述黑矩阵在所述衬底上的正投影覆盖；
    对所述初始反射层远离所述衬底的表面进行表面处理，使该表面形成用于对光线进行散射的微结构，或者至少一个向所述黑矩阵一侧凹陷的曲面。
  16. 一种显示模组，包括：
    发光基板，所述发光基板为有机电致发光基板，或者所述发光基板包括背光模组、阵列基板和液晶层；所述发光基板包括多个子像素发光区；
    如权利要求13所述的彩膜基板，与所述发光基板叠加设置，所述彩膜基板的黑矩阵的一个开口与一个子像素发光区对应；在所述发光基板为有机电致发光基板的情况下，所述彩膜基板的黑矩阵、彩膜层和反射层相对于其衬底靠近所述发光基板；在所述发光基板包括背光模组、阵列基板和液晶层的情况下，所述阵列基板、所述液晶层和所述彩膜基板形成液晶盒，所述背光模组设置于所述阵列基板远离所述彩膜基板的一侧。
  17. 一种显示模组，包括：
    发光基板，所述发光基板为有机电致发光基板；所述发光基板包括多个子像素发光区；
    如权利要求1～12中任一项所述的彩膜结构，直接设置于发光基板的封装层上，且所述彩膜结构的反射层相对于其黑矩阵靠近所述发光基板；所述彩膜基板的黑矩阵的一个开口与一个子像素发光区对应。
  18. 一种如权利要求17所述的显示模组的制作方法，包括：
    在发光基板的封装层上制作反射层；
    在所述反射层远离所述发光基板的一侧制作黑矩阵；其中，所述反射层在所述发光基板上的正投影被所述黑矩阵在所述发光基板上的正投影覆盖；
    制作彩膜层；其中，所述彩膜层包括多个滤光部，每个滤光部的至少一部分位于所述黑矩阵的一个开口内。
  19. 根据权利要求18所述的制作方法，其中，所述反射层远离所述发光基板的表面具有用于对光线进行散射的微结构，或者包括至少一个向所述黑矩阵一侧凹陷的曲面；
    所述在发光基板的封装层上制作反射层之前，还包括：
    在所述发光基板的封装层上制作基底结构；其中，所述基底结构远离所述发光基板的表面形貌，与所述反射层靠近所述发光基板的表面形貌相适应，以在后续制作所述反射层的步骤中，使反射层靠近所述发光基板的表面形成用于对光线进行散射的微结构，或者至少一个向所述黑矩阵一侧凹陷的曲面。
  20. 一种显示装置，包括如权利要求16或17所述的显示模组。
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111261681A (zh) * 2020-01-20 2020-06-09 京东方科技集团股份有限公司 彩膜结构、显示面板及其制备方法和显示装置
CN111554731B (zh) * 2020-06-15 2022-06-03 京东方科技集团股份有限公司 Oled显示面板制备方法及显示面板、显示装置
CN113238407B (zh) * 2021-04-26 2022-08-12 福州大学 一种提升显示效率的吸光黑矩阵结构及其制备方法
CN113764493A (zh) * 2021-09-08 2021-12-07 武汉华星光电半导体显示技术有限公司 一种彩色滤光片及其制备方法
CN114361225B (zh) * 2021-12-31 2022-11-01 长沙惠科光电有限公司 显示面板
CN114822290B (zh) * 2022-04-19 2023-08-22 广州华星光电半导体显示技术有限公司 发光模组及显示装置
CN116107111A (zh) * 2023-02-10 2023-05-12 昆山龙腾光电股份有限公司 显示面板及显示装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080062361A1 (en) * 2006-09-11 2008-03-13 Samsung Electronics Co., Ltd. Display panel and method for manufacturing a color filter substrate of the display panel
CN101556397A (zh) * 2008-04-11 2009-10-14 北京京东方光电科技有限公司 彩膜基板、彩膜基板制造方法和液晶显示器
CN103033977A (zh) * 2012-12-14 2013-04-10 京东方科技集团股份有限公司 液晶显示装置
CN103676316A (zh) * 2013-12-09 2014-03-26 京东方科技集团股份有限公司 一种显示面板和显示装置
CN104199213A (zh) * 2014-08-18 2014-12-10 京东方科技集团股份有限公司 一种半透半反式液晶显示面板及液晶显示器
CN106249463A (zh) * 2016-08-10 2016-12-21 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置
CN110471209A (zh) * 2019-08-15 2019-11-19 上海中航光电子有限公司 基板、制作方法及显示面板
CN111261681A (zh) * 2020-01-20 2020-06-09 京东方科技集团股份有限公司 彩膜结构、显示面板及其制备方法和显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008065197A (ja) * 2006-09-11 2008-03-21 Hitachi Displays Ltd 液晶表示装置およびその製造方法
KR102189819B1 (ko) * 2014-09-01 2020-12-14 삼성디스플레이 주식회사 유기 발광 표시 장치
CN105807483B (zh) * 2016-05-27 2019-01-22 京东方科技集团股份有限公司 显示面板及其制作方法、以及显示装置
CN107632453B (zh) * 2017-10-31 2021-03-02 京东方科技集团股份有限公司 显示面板及制造方法和显示装置
KR102556011B1 (ko) * 2018-01-23 2023-07-14 삼성디스플레이 주식회사 반도체 나노 결정과, 이를 포함하는 표시 장치 및 유기발광 표시 장치

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080062361A1 (en) * 2006-09-11 2008-03-13 Samsung Electronics Co., Ltd. Display panel and method for manufacturing a color filter substrate of the display panel
CN101556397A (zh) * 2008-04-11 2009-10-14 北京京东方光电科技有限公司 彩膜基板、彩膜基板制造方法和液晶显示器
CN103033977A (zh) * 2012-12-14 2013-04-10 京东方科技集团股份有限公司 液晶显示装置
CN103676316A (zh) * 2013-12-09 2014-03-26 京东方科技集团股份有限公司 一种显示面板和显示装置
CN104199213A (zh) * 2014-08-18 2014-12-10 京东方科技集团股份有限公司 一种半透半反式液晶显示面板及液晶显示器
CN106249463A (zh) * 2016-08-10 2016-12-21 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置
CN110471209A (zh) * 2019-08-15 2019-11-19 上海中航光电子有限公司 基板、制作方法及显示面板
CN111261681A (zh) * 2020-01-20 2020-06-09 京东方科技集团股份有限公司 彩膜结构、显示面板及其制备方法和显示装置

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