WO2024101107A1 - Dispositif de nettoyage de substrat et procédé de nettoyage de substrat - Google Patents

Dispositif de nettoyage de substrat et procédé de nettoyage de substrat Download PDF

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Publication number
WO2024101107A1
WO2024101107A1 PCT/JP2023/037874 JP2023037874W WO2024101107A1 WO 2024101107 A1 WO2024101107 A1 WO 2024101107A1 JP 2023037874 W JP2023037874 W JP 2023037874W WO 2024101107 A1 WO2024101107 A1 WO 2024101107A1
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WIPO (PCT)
Prior art keywords
cleaning
substrate
wafer
cleaning member
back surface
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PCT/JP2023/037874
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English (en)
Japanese (ja)
Inventor
誠 柏木
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株式会社荏原製作所
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Publication of WO2024101107A1 publication Critical patent/WO2024101107A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate cleaning device and a substrate cleaning method that cleans the front or back surface of a substrate, such as a wafer, by contacting a cleaning tool with the front or back surface of the substrate.
  • CMOS sensors CMOS sensors
  • foreign matter such as fine particles and dust can adhere to the devices.
  • Foreign matter that adheres to the devices can cause short circuits between wiring and circuit malfunctions. Therefore, in order to improve the reliability of the devices, it is necessary to clean the surface of a substrate, such as a wafer on which the devices are formed, and remove the foreign matter on the surface of the substrate.
  • Foreign matter such as the fine particles and dust mentioned above can also adhere to the back surface (non-device surface) of the substrate.
  • the substrate moves away from the stage reference surface of the exposure device, or the substrate surface tilts relative to the stage reference surface, resulting in misalignment of the patterning and focal length.
  • it is necessary to remove the foreign matter that has adhered to the back surface of the substrate.
  • Patent Document 1 describes a substrate cleaning device that brings a pen sponge, which is a pen-shaped cleaning tool, into contact with the surface of a substrate while holding and rotating the peripheral edge of the substrate, and further oscillates the pen sponge in the radial direction of the substrate to clean the surface of the substrate.
  • the substrate In order to improve the efficiency of cleaning a substrate, it is generally necessary to increase the pressure with which the cleaning tool is pressed against the substrate. However, if the pressure with which the cleaning tool is pressed against the substrate is increased too much, the substrate may be subjected to a large stress, causing it to warp and become damaged. If the substrate is warped due to a large stress, even if the substrate is not damaged, it may have an adverse effect on the devices formed on the substrate.
  • the present invention aims to provide a substrate cleaning apparatus and a substrate cleaning method that can improve the efficiency of substrate cleaning while preventing excessive stress from being applied to the substrate.
  • a substrate cleaning device in one aspect, includes a substrate holding part that holds and rotates the peripheral portion of a substrate, and at least one substrate cleaning tool that contacts the front or back surface of the substrate held by the substrate holding part and cleans the front or back surface of the substrate, each of the substrate cleaning tools including a Bernoulli chuck that generates a suction force to suck in the front or back surface of the substrate by ejecting a fluid, and a cleaning member attached to the Bernoulli chuck, and the cleaning member presses against the front or back surface of the substrate in response to the suction force.
  • a surface of the cleaning member protrudes beyond the Bernoulli chuck.
  • the front surface of the cleaning member has an area smaller than an area of the back surface of the cleaning member.
  • the substrate cleaning tool further includes a pure water supply mechanism that supplies pure water to a rear surface of the cleaning member.
  • the substrate cleaning apparatus further comprises a cleaning tool moving mechanism for moving the substrate cleaning tool in a radial direction of the substrate during cleaning of the substrate.
  • the substrate cleaning apparatus further includes a cleaning device for cleaning the cleaning member.
  • a substrate cleaning method in which the peripheral edge of a substrate is held, rotated, and fluid is ejected from a Bernoulli chuck to suck the front or back surface of the substrate, and a cleaning member is pressed against the front or back surface of the substrate with a pressure corresponding to the suction force generated by the Bernoulli chuck, thereby cleaning the front or back surface of the substrate.
  • the step of cleaning the front or back surface of the substrate is performed by pressing a front surface of the cleaning member protruding beyond the Bernoulli chuck against the front or back surface of the substrate. In one embodiment, the step of cleaning the front or back surface of the substrate is performed by pressing a front surface of the cleaning member, which has an area smaller than an area of the back surface, against the front or back surface of the substrate. In one embodiment, after the substrate is cleaned, pure water is supplied to a rear surface of the cleaning member to clean the cleaning member.
  • the step of cleaning the front or back surface of the substrate is performed while moving the cleaning member in a radial direction of the substrate. In one embodiment, the cleaning member is cleaned after the substrate is cleaned.
  • the cleaning member of the substrate cleaning tool presses against the surface of the substrate with a pressure force acting in the opposite direction to the suction force generated by the Bernoulli chuck. Therefore, even if the pressure force pressing the cleaning member against the substrate is increased, excessive stress is prevented from being applied to the substrate, and as a result, damage to the substrate during cleaning can be prevented.
  • FIG. 1 is a perspective view showing a substrate cleaning apparatus according to an embodiment of the present invention.
  • FIG. 2 is a plan view showing a schematic diagram of a substrate holding section according to another embodiment.
  • FIG. 3 is a side view of the substrate holder shown in FIG.
  • FIG. 4 is a cross-sectional view illustrating a substrate cleaning tool according to an embodiment.
  • FIG. 5A is a top view that illustrates a schematic view of the surface of the Bernoulli chuck when fluid is being ejected from the fluid ejection port.
  • FIG. 5B is a schematic diagram showing the state in which the Bernoulli chuck is sucking the wafer.
  • FIG. 6A is a diagram illustrating a modified example of the cleaning member.
  • FIG. 6A is a diagram illustrating a modified example of the cleaning member.
  • FIG. 6B is a diagram illustrating a modified example of the cleaning member.
  • FIG. 6C is a diagram illustrating a modified example of the cleaning member.
  • FIG. 6D is a diagram illustrating a modified example of the cleaning member.
  • FIG. 6E is a diagram illustrating a modified example of the cleaning member.
  • FIG. 7 is a perspective view that illustrates a peripheral edge cleaning device according to an embodiment.
  • FIG. 8 is a side view that diagrammatically illustrates the peripheral edge cleaning apparatus shown in FIG.
  • FIG. 9 is a top view diagrammatically illustrating a substrate cleaning apparatus according to another embodiment.
  • FIG. 10 is a side view that typically illustrates the substrate cleaning apparatus shown in FIG.
  • FIG. 11 is a top view that illustrates a substrate cleaning apparatus according to still another embodiment.
  • FIG. 12 is a side view diagrammatically illustrating the substrate cleaning apparatus shown in FIG.
  • FIG. 1 is a perspective view showing a substrate cleaning apparatus according to an embodiment.
  • the substrate cleaning apparatus shown in FIG. 1 is an apparatus for cleaning the surface (upper surface) of a wafer W, which is an example of a substrate.
  • the substrate cleaning apparatus includes a substrate holder 41 for holding and rotating the wafer W, a substrate cleaning tool 42 for contacting the surface of the wafer W, an arm 44 for holding the substrate cleaning tool 42, a rinse liquid supply nozzle 46 for supplying a rinse liquid (usually pure water) to the surface of the wafer W, and a chemical liquid supply nozzle 47 for supplying a chemical liquid to the surface of the wafer W.
  • the substrate cleaning tool 42 is connected to a cleaning tool rotation mechanism (not shown) arranged in the arm 44, and the substrate cleaning tool 42 is rotated around its central axis extending in the vertical direction.
  • the cleaning tool rotation mechanism is, for example, a motor. In one embodiment, the cleaning tool rotation mechanism may be omitted. In this case, the substrate cleaning tool 42 is not rotated around its central axis.
  • the substrate cleaning apparatus further has a control device 8, to which various components of the substrate cleaning apparatus, including a substrate holder 41 and a substrate cleaner 42, are connected.
  • the control device 8 is configured to control the operation of these components, thereby controlling the operation of the substrate cleaning apparatus. Note that in FIG. 1, the signal lines extending from each component of the substrate cleaning apparatus to the control device 8 have been omitted in order to reduce the complexity of the drawing.
  • the control device 8 is composed of, for example, at least one computer.
  • the control device 8 includes a storage device 8a and an arithmetic device 8b.
  • the arithmetic device 8b includes a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit) that performs calculations according to instructions included in the program stored in the storage device 8a.
  • the storage device 8a includes a main storage device (e.g., random access memory) that can be accessed by the arithmetic device 8b, and an auxiliary storage device (e.g., a hard disk drive or solid state drive) that stores data and programs.
  • the substrate holding unit 41 functions as a substrate holding unit that holds the peripheral edge of the wafer W, and includes a plurality of chucks 45 (four in FIG. 1) that contact the peripheral edge of the wafer W, and a motor 48 connected to the chucks 45.
  • the chucks 45 hold the wafer W horizontally, and in this state the wafer W is rotated around its central axis by the motor 48.
  • the substrate holding unit 41 is not limited to the configuration shown in FIG. 1 and may have any configuration as long as it is capable of holding the peripheral portion of the wafer W and rotating the wafer W without interfering with the operation of the substrate cleaning tool 42.
  • the substrate holding unit 41 that holds and rotates the wafer W may be the substrate holding unit 41 described below with reference to FIGS. 2 and 3.
  • FIG. 2 is a plan view showing a schematic diagram of a substrate holding section according to another embodiment.
  • FIG. 3 is a side view of the substrate holding section shown in FIG. 2.
  • the substrate holding section 41 shown in FIGS. 2 and 3 is a substrate holding section configured to hold a wafer W, move the wafer W in a circular motion, and rotate the wafer W about its axis. Note that in the substrate cleaning apparatus shown in FIGS. 2 and 3, the configuration other than the substrate holding section 41 is the same as the configuration of the substrate cleaning apparatus described with reference to FIG. 1.
  • the substrate holder 41 shown in Figures 2 and 3 includes a plurality of rollers 111a, 111b that can contact the peripheral portion of the wafer W, a plurality of electric motors 129a, 129b that rotate the plurality of rollers 111a, 111b, and a plurality of eccentric shafts 113a, 113b that connect the plurality of rollers 111a, 111b and the plurality of electric motors 129a, 129b.
  • the plurality of electric motors 129a, 129b are connected to a control device 8 (see Figure 1), which rotates the plurality of electric motors 129a, 129b at the same speed and in the same phase.
  • Roller 111a has a wafer holding surface (substrate holding surface) 131a that holds the peripheral edge of wafer W
  • roller 111b has a wafer holding surface (substrate holding surface) 131b that holds the peripheral edge of wafer W.
  • Rollers 111a and 111b have the same configuration and size.
  • Multiple eccentric shafts 113a, 113b are arranged around a predetermined central axis CP of substrate holding portion 41.
  • the substrate holding unit 41 in this embodiment includes two rollers 111a, two rollers 111b, two eccentric shafts 113a, two eccentric shafts 113b, two electric motors 129a, and two electric motors 129b, but the number of these components is not limited to this embodiment.
  • Each of the multiple eccentric shafts 113a has a first shaft portion 114a, a second shaft portion 115a eccentric from the first shaft portion 114a, and an intermediate shaft portion 116a connecting the first shaft portion 114a and the second shaft portion 115a.
  • each of the eccentric shafts 113a shown in FIG. 3 has the shape of a crankshaft, the shape of each of the eccentric shafts 113a is not limited to this embodiment as long as the second shaft portion 115a is eccentric from the first shaft portion 114a by a predetermined distance.
  • each of the multiple eccentric shafts 113b has a first shaft portion 114b, a second shaft portion 115b eccentric from the first shaft portion 114b, and an intermediate shaft portion 116b connecting the first shaft portion 114b and the second shaft portion 115b.
  • Each eccentric shaft 113b shown in FIG. 3 has the shape of a crankshaft, but the shape of each eccentric shaft 113b is not limited to this embodiment as long as the second shaft portion 115b is eccentric from the first shaft portion 114b by a predetermined distance.
  • the rollers 111a are fixed to one end of each of the second shafts 115a, and the other ends of the second shafts 115a are fixed to one end of each of the intermediate shafts 116a.
  • the first shafts 114a are connected to one end of each of the electric motors 129a via one couplings 128a, and the other ends of the first shafts 114a are fixed to one end of each of the intermediate shafts 116a.
  • the rollers 111b are fixed to one end of each of the second shafts 115b, and the other ends of the second shafts 115b are fixed to one end of each of the intermediate shafts 116b.
  • the first shafts 114b are connected to one end of each of the electric motors 129b via one couplings 128b, and the other ends of the first shafts 114b are fixed to one end of each of the intermediate shafts 116b.
  • the electric motor 129a is configured to rotate the eccentric shaft 113a around its first shaft portion 114a
  • the electric motor 129b is configured to rotate the eccentric shaft 113b around its first shaft portion 114b.
  • the second shaft portion 115a of the eccentric shaft 113a is eccentric from the first shaft portion 114a by a distance e. Therefore, when the electric motor 129a is operated, the roller 111a performs a circular motion of radius e while rotating around the second shaft portion 115a.
  • the axis of the roller 111a coincides with the axis of the second shaft portion 115a. In other words, the roller 111a performs a circular motion of radius e around the axis of the first shaft portion 114a while rotating around its axis.
  • the second shaft portion 115b of the eccentric shaft 113b is eccentric from the first shaft portion 114b by a distance e. Therefore, when the electric motor 129b is operated, the roller 111b performs a circular motion of radius e while rotating around the second shaft portion 115b.
  • the axis of the roller 111b coincides with the axis of the second shaft portion 115b. In other words, the roller 111b performs a circular motion of radius e around the axis of the first shaft portion 114b while rotating around its axis.
  • circular motion is defined as the motion of an object moving on a circular orbit.
  • the control device 8 rotates all the electric motors 129a, 129b at the same speed and in the same phase. More specifically, the control device 8 issues a command to the electric motors 129a, 129b to start all the electric motors 129a, 129b at the same timing and rotate all the electric motors 129a, 129b in the same direction. Furthermore, the control device 8 synchronizes the rotation speed and phase of each of the electric motors 129a, 129b while they are operating. As a result, all the eccentric shafts 113a, 113b rotate in the same direction at the same rotation speed and in the same phase around the axis of the first shaft portions 114a, 114b.
  • All the rollers 111a, 111b perform circular motion around the axis of the first shaft portions 114a, 114b while rotating in the same direction at the same rotation speed and in the same phase around the axis. Therefore, when the wafer W is held by the rollers 111a and 111b, the control device 8 operates the motors 129a and 129b, causing the wafer W to perform a circular motion of radius e while rotating around its axis.
  • the substrate holding device 41 shown in Figures 2 and 3 has a simple structure and can rotate the wafer W around its axis while moving the wafer W in a circular motion.
  • the combination of such circular motion and rotation around the axis of the wafer W can increase the speed at each point on the surface of the wafer W. Therefore, when the cleaning member of the substrate cleaning tool 42 described below is pressed against the surface of the wafer W, the relative speed between the cleaning member and the surface of the wafer W increases, improving the cleaning efficiency of the wafer W.
  • counterweights 117a and 117b are fixed to the multiple eccentric shafts 113a and 113b, respectively. More specifically, the counterweights 117a and 117b are fixed to the intermediate shafts 116a and 116b, respectively.
  • the counterweight 117a and roller 111a are arranged symmetrically with respect to the first shaft 114a.
  • the weight of the counterweight 117a is the weight at which the centrifugal force acting on the counterweight 117a cancels the centrifugal force generated in the radial direction from the first shaft 114a toward the roller 111a when the eccentric shaft 113a rotates around the first shaft 114a.
  • the counterweight 117b and roller 111b are arranged symmetrically with respect to the first shaft portion 114b.
  • the weight of the counterweight 117b is such that when the eccentric shaft 113b rotates around the first shaft portion 114b, the centrifugal force generated in the radial direction from the first shaft portion 114b toward the roller 111b is cancelled by the centrifugal force acting on the counterweight 117b.
  • Such counterweights 117a, 117b can prevent vibration of the eccentric shafts 113a, 113b caused by weight imbalance when the eccentric shafts 113a, 113b rotate.
  • the arm 44 is disposed above the wafer W.
  • the substrate cleaning tool 42 is connected to one end of the arm 44, and a pivot shaft 50 is connected to the other end of the arm 44.
  • the substrate cleaning tool 42 is connected to a cleaning tool moving mechanism 51 via the arm 44 and the pivot shaft 50. More specifically, a cleaning tool moving mechanism 51 that rotates the arm 44 and moves the pivot shaft 50 up and down is connected to the pivot shaft 50.
  • the cleaning tool moving mechanism 51 is also connected to the control device 8, and the control device 8 is configured to be able to control the operation of the cleaning tool moving mechanism 51.
  • the cleaning tool moving mechanism 51 shown in FIG. 1 has a swivel device 51a that rotates the pivot shaft 50 by a predetermined angle to rotate the arm 44 in a plane parallel to the wafer W, and a vertical movement device 51b that can move the pivot shaft 50 up and down.
  • a swivel device 51a that rotates the pivot shaft 50 by a predetermined angle to rotate the arm 44 in a plane parallel to the wafer W
  • a vertical movement device 51b that can move the pivot shaft 50 up and down.
  • FIG. 4 is a cross-sectional view showing a schematic diagram of a substrate cleaning tool according to one embodiment.
  • the substrate cleaning tool 42 shown in FIG. 4 includes a Bernoulli chuck 55 that generates a suction force by ejecting a fluid using Bernoulli's theorem, and a cleaning member 56 that comes into contact with the surface of the wafer W sucked by the Bernoulli chuck 55 and cleans the surface of the wafer W.
  • the cleaning member 56 is made of, for example, a sponge-like porous material, and is capable of holding a fluid inside the cleaning member 56 while allowing the fluid to pass through the inside of the cleaning member 56.
  • the Bernoulli chuck 55 is a chuck that can suck the surface of the wafer W (in this embodiment, the upper surface of the wafer W) by a fluid flow and support the wafer W without contact.
  • the Bernoulli chuck 55 shown in FIG. 4 has a base 55a to which a cleaning member 56 is attached, a plurality of fluid outlets 55b located around the base 55a, and a chuck body 55d in which a fluid flow path 55c communicating with the fluid outlets 55b is formed.
  • the base 55a has a cylindrical shape, and a cleaning member 56 having a cylindrical shape is attached to the surface (front surface) of the base 55a.
  • the central axis of the cleaning member 56 coincides with the central axis of the base 55a.
  • the surface of the base 55a faces the surface of the wafer W via the cleaning member 56.
  • the cleaning member 56 will be described in detail later.
  • the fluid flow path 55c is connected to a fluid supply line 15 that supplies a fluid.
  • the fluid is a liquid such as pure water.
  • the fluid may be a chemical liquid (or a cleaning liquid) for promoting the cleaning effect of the surface of the wafer W.
  • chemical liquids include ammonia hydrogen peroxide, hydrochloric acid hydrogen peroxide, sulfuric acid hydrogen peroxide, sulfuric acid hydrate, and hydrofluoric acid.
  • the fluid may be a gas such as dry air and an inert gas.
  • the fluid supply line 15 is connected to a fluid supply source (not shown).
  • a fluid supply valve 16 is attached to the fluid supply line 15, and the fluid supply valve 16 is electrically connected to the control device 8 (see FIG. 1).
  • the opening and closing operation of the fluid supply valve 16 is controlled by the control device 8.
  • Examples of the fluid supply valve 16 include actuator-type driven valves such as electric valves and solenoid valves. When the fluid supply valve 16 is opened, fluid is supplied to the Bernoulli chuck 55 through the fluid supply line 15.
  • FIG. 5A is a top view showing the surface (front) of the Bernoulli chuck when fluid is being discharged from the fluid nozzle
  • FIG. 5B is a schematic diagram showing the state in which the Bernoulli chuck is sucking a wafer.
  • the fluid supplied to the Bernoulli chuck 55 is ejected from the fluid nozzle 55b toward the outside of the chuck body 55d through the fluid flow path 55c (see FIG. 4).
  • each fluid nozzle 55b faces the radially outward direction of the chuck body 55d.
  • the suction force of the wafer W generated by the Bernoulli chuck 55 can be adjusted according to the flow rate (or flow rate) of the fluid ejected from the fluid ejection port 55b. Specifically, when the flow rate of the fluid ejected from the fluid ejection port 55b is increased, the suction force on the wafer W increases, and when the flow rate of the fluid ejected from the fluid ejection port 55b is decreased, the suction force on the wafer W decreases. Therefore, in this embodiment, a flow rate regulator (e.g., a mass controller) 17 may be disposed in the fluid supply line 15. The flow rate regulator 17 is connected to the control device 8 (see FIG. 1). The control device 8 controls the operation of the flow rate regulator 17 to adjust the flow rate of the fluid ejected from the fluid ejection port 55b of the Bernoulli chuck 55, thereby adjusting the suction force on the wafer W.
  • a flow rate regulator e.g., a mass controller
  • the Bernoulli chuck 55 of this embodiment is configured to spray fluid from the fluid outlet 55b radially toward the outside of the chuck body 55d of the Bernoulli chuck 55.
  • the Bernoulli chuck 55 is not limited to this embodiment as long as the surface of the wafer W can be sucked by the flow of fluid.
  • a cyclone-type Bernoulli chuck may be used that sucks the surface of the wafer W by forming a swirling flow and flowing the fluid to the outside of the Bernoulli chuck 55.
  • the cleaning member 56 is a member that comes into contact with the surface of the wafer W sucked by the Bernoulli chuck 55 and cleans the surface of the wafer W.
  • the surface (front) of the cleaning member 56 protrudes further than the surface (front) of the chuck body 55d of the Bernoulli chuck 55 (see FIG. 4). Therefore, when the wafer W is sucked by the Bernoulli chuck 55, the surface of the wafer W comes into contact with the surface of the cleaning member 56 before coming into contact with the Bernoulli chuck 55, and the cleaning member 56 is pressed against the surface of the wafer W with a pressing force corresponding to the negative pressure (suction force) generated by the Bernoulli chuck.
  • the cleaning member 56 is made of a resin that deforms in response to the pressure applied to the surface of the wafer W and has flexibility suitable for cleaning the surface of the wafer W.
  • resins include polyvinyl alcohol (PVA), polypropylene (PP), and nylon.
  • the wafer W is cleaned as follows. First, the wafer W is held by the substrate holder 41, and then the wafer W is rotated around its central axis. Next, the swivel device 51a and the vertical movement device 51b of the cleaning tool moving mechanism 51 are operated to bring the substrate cleaning tool 42 close to the surface of the wafer W. More specifically, the swivel device 51a is operated to move the substrate cleaning tool 42 to a desired position above the wafer W, and then the vertical movement device 51b is operated to move the substrate cleaning tool 42 toward the surface of the wafer W. At this time, the surface of the cleaning member 56 may or may not be in contact with the surface of the wafer W.
  • a fluid is supplied to the Bernoulli chuck 55 of the substrate cleaning tool 42 to suck the wafer W into the substrate cleaning tool 42, thereby pressing the cleaning member 56 of the substrate cleaning tool 42 against the surface of the wafer W.
  • a chemical liquid may be supplied to the surface of the wafer W from the chemical liquid supply nozzle 47 during cleaning of the wafer W.
  • a chemical liquid or cleaning liquid is supplied from the chemical liquid supply nozzle 47 to the surface of the wafer W. Note that, if the amount of chemical liquid supplied to the Bernoulli chuck 55 is sufficient to clean the surface of the wafer W, the chemical liquid supply nozzle 47 may be omitted.
  • the cleaning tool moving mechanism 51 is operated to oscillate the substrate cleaning tool 42 in the radial direction of the wafer W. This action causes the cleaning member 56 to slide against the surface of the wafer W in the presence of the chemical liquid, thereby cleaning the surface of the wafer W.
  • the substrate cleaning tool 42 may be rotated while the wafer W is being cleaned. After the scrubbing, a rinsing liquid is supplied from the rinsing liquid supply nozzle 46 to the surface of the rotating wafer W in order to rinse the chemical liquid from the wafer W.
  • the cleaning member 56 presses against the surface of the wafer W in response to the suction force generated by the Bernoulli chuck 55. That is, the cleaning member 56 presses against the surface of the wafer W with a pressing force acting in the opposite direction to the suction force generated by the Bernoulli chuck 55. Therefore, even if the pressing force with which the cleaning member 56 is pressed against the wafer W is increased to improve cleaning efficiency, excessive stress is prevented from being applied to the wafer W, and as a result, damage to the wafer W during cleaning can be prevented.
  • the suction force on the wafer W generated by the Bernoulli chuck 55 varies depending on the distance between the surface of the wafer W and the surface of the chuck body 55d of the Bernoulli chuck 55. Specifically, when the distance between the surface of the wafer W and the surface of the chuck body 55d of the Bernoulli chuck 55 is large, the volume of the space formed between the surface of the wafer W and the surface of the chuck body 55d of the Bernoulli chuck 55 becomes large, and as a result, the flow rate of the fluid flowing between the surface of the wafer W and the surface of the chuck body 55d of the Bernoulli chuck 55 becomes slow.
  • the surface of the cleaning member 56 may have an area smaller than the area of the back surface of the cleaning member 56 (the surface attached to the base 55a) so that the Bernoulli chuck 55 can easily suck the wafer W even when the suction force generated by the Bernoulli chuck 55 on the wafer W is small.
  • Figures 6A to 6E are diagrams that show modified examples of the cleaning member. More specifically, Figures 6A to 6C are cross-sectional views of modified examples of the cleaning member, and Figures 6D and 6E are top views of modified examples of the cleaning member.
  • the cleaning member 56 shown in FIG. 6A has a cylindrical portion 56e attached to the base 55a of the Bernoulli chuck 55, and an upwardly convex mountain-shaped portion 56f formed on the flat surface that is the front end of the cylindrical portion 56e.
  • the cleaning member 56 shown in FIG. 6B has a downwardly convex valley-shaped portion 56g formed on the flat surface of the cylindrical portion 56e.
  • the surface of the mountain-shaped portion 56f shown in FIG. 6A constitutes the surface 56a of the cleaning member 56
  • the surface of the valley-shaped portion 56g shown in FIG. 6B constitutes the surface 56a of the cleaning member 56.
  • the horizontal cross-sectional area of the surface 56a of the cleaning member 56 shown in FIG. 6A and FIG. 6B gradually increases toward the back surface (rear surface) 56b.
  • the cleaning member 56 shown in FIG. 6C has a ring-shaped protrusion 56c protruding from the flat surface, and the surface of the protrusion 56c constitutes the surface 56a of the cleaning member 56.
  • the protrusion 56c shown in FIG. 6C is formed on the outermost periphery of the flat surface of the cleaning member 56, but the position of the protrusion 56c on the flat surface of the cleaning member 56 is arbitrary.
  • multiple ring-shaped protrusions 56c may be arranged concentrically on the flat surface of the cleaning member 56.
  • a cylindrical protrusion 56c' may be arranged in the center of the flat surface of the cleaning member 56.
  • the surface of the protrusion 56c' is on the same plane as the surface of the protrusion 56c, and the surface of the protrusion 56c' also constitutes part of the surface 56a of the cleaning member 56.
  • the surface of protrusion 56c' may protrude further than the surface of protrusion 56c, or conversely, the surface of protrusion 56c may protrude further than the surface of protrusion 56c'.
  • cleaning member 56 may only have protrusion 56c' located in the center of the flat surface of cleaning member 56.
  • a plurality of cylindrical protrusions 56c'' may be formed on the flat surface of the cleaning member 56.
  • the total surface area of the protrusions 56c'' is smaller than the area of the rear surface of the cleaning member 56, and the surfaces of the protrusions 56c'' form the surface 56a of the cleaning member 56.
  • the protrusions 56c', 56c'' each have a cylindrical shape, but the shape of the protrusions 56c', 56c'' is arbitrary.
  • the protrusions 56c', 56c'' may each have a prismatic shape such as a square prism shape or a pentagonal prism shape, or may have a conical shape or a truncated conical shape.
  • the substrate cleaning tool 42 may have a pure water supply mechanism 60 that supplies pure water to the back surface (rear surface) of the cleaning member 56.
  • the pure water supply mechanism 60 prevents the cleaning member 56 from drying out and further cleans the cleaning member 56.
  • the pure water supply mechanism 60 shown in FIG. 4 is formed in the chuck body 55d of the Bernoulli chuck 55 and includes a pure water flow path 61 that communicates with the rear surface of the cleaning member 56, a pure water supply line 63 that is connected to the pure water flow path 61, and a pure water supply valve 64 that is disposed on the pure water supply line 63.
  • the pure water supply valve 64 is connected to the control device 8 (see FIG. 1), and the control device 8 controls the operation of the pure water supply valve 64.
  • the control device 8 opens the pure water supply valve 64 and supplies pure water from the pure water supply line 63 to the back surface of the cleaning member 56 via the pure water flow path 61.
  • the cleaning member 56 is made of a sponge-like porous material, and the pure water supplied to the cleaning member 56 can flow from the back surface to the front surface of the cleaning member 56.
  • the pure water flowing through the cleaning member 56 prevents the cleaning member 56 from drying, and furthermore, foreign matter (e.g., dirt such as particles) attached to the cleaning member 56 by cleaning the wafer W is washed away from the cleaning member 56.
  • a cleaning device 75 for cleaning the cleaning member 56 of the substrate cleaning tool 42 may be provided on the side of the wafer substrate holding part 41.
  • the cleaning device 75 shown in FIG. 1 includes a cleaning plate 76 arranged adjacent to the substrate holding part 41, and a pure water supply nozzle 77 arranged adjacent to the cleaning plate 76.
  • the configuration of the cleaning device 75 is arbitrary as long as it is capable of cleaning the cleaning member 56, and a known configuration may be adopted.
  • the cleaning device 75 may have a brush, instead of the cleaning plate 76, that cleans the cleaning member 56 by rubbing against it.
  • the arm 44 is moved by the swivel device 51a of the cleaning tool moving mechanism 51 until the cleaning member 56 reaches a position above the cleaning plate 76. Furthermore, while rotating the substrate cleaning tool 42 around its axis, the up-down movement device 51b of the cleaning tool moving mechanism 51 presses the cleaning member 56 of the substrate cleaning tool 42 against the surface (cleaning surface) of the cleaning plate 76. At this time, pure water is supplied from the pure water supply nozzle 77 to the cleaning member 56 in contact with the cleaning plate 76. Through these operations, the cleaning member 56 is cleaned.
  • the cleaning plate 76 shown in FIG. 1 has a truncated cone shape.
  • the surface of this cleaning plate 76 constitutes a cleaning surface 78 that comes into contact with the surface of the cleaning member 56 of the substrate cleaning tool 42.
  • the cleaning surface 78 of the cleaning plate 76 has a circular central portion 78a and an inclined portion 78b that spreads outward from the central portion 78a and inclines downward. This inclined portion 78b has an annular shape.
  • the central portion 78a of the cleaning plate 76 protrudes upward and is located higher than the other portions around the central portion 78a (i.e., the inclined portion 78b). Therefore, when the substrate cleaning tool 42 descends, the central portion of the surface of the cleaning member 56 comes into contact with the protruding central portion 78a of the cleaning surface 78. When the substrate cleaning tool 42 descends further, the outer periphery of the surface of the cleaning member 56 comes into contact with the inclined portion 78b of the cleaning surface 78. In this way, the entire surface of the cleaning member 56 comes into contact with the cleaning surface 78 of the cleaning plate 76.
  • the cleaning plate 76 is made of, for example, quartz, resin, polypropylene, polybutylene terephthalate, etc.
  • the cleaning plate 76 Since the cleaning plate 76 has a truncated cone shape, the center of the cleaning member 56 is pressed against the cleaning plate 76 more strongly than the other parts, and dirt that has entered the inside of the center of the cleaning member 56 can be removed. Once the dirt has been removed from the cleaning member 56, it quickly flows down the inclined portion 78b of the cleaning plate 76 together with the pure water. This prevents foreign matter from reattaching to the cleaning member 56.
  • the cleaning plate 76 shown in FIG. 1 has a truncated cone shape, but the shape of the cleaning plate 76 is not limited to this embodiment.
  • the cleaning plate 76 may have a shape corresponding to the surface shape of the cleaning member 56 shown in FIGS. 6A to 6E.
  • the cleaning tool moving mechanism 51 moves the substrate cleaning tool 42 until the outer edge of the chuck body 55d of the Bernoulli chuck 55 passes over the outer edge of the wafer W, there is a risk that part of the vacuum formed in the space between the surface of the chuck body 55d of the Bernoulli chuck 55 and the surface of the wafer W may be destroyed.
  • the cleaning member 56 may not be pressed against the surface of the wafer W with an appropriate pressing force, and the peripheral portion of the wafer W may not be efficiently cleaned. Therefore, it is preferable that the substrate cleaning device is equipped with a peripheral cleaning device that cleans the peripheral portion of the wafer W.
  • FIG. 7 is a perspective view that shows a schematic of a peripheral cleaning apparatus according to one embodiment
  • FIG. 8 is a side view that shows a schematic of the peripheral cleaning apparatus shown in FIG. 7.
  • components of the substrate cleaning apparatus other than the wafer W held by the chuck 45 of the substrate holding portion 41 are omitted from illustration in order to avoid cluttering the figures.
  • the peripheral cleaning device 80 shown in Figures 7 and 8 includes roll-type cleaning members 82a and 82b, motors 83a and 83b, cleaning liquid nozzles 84a and 84b, rinsing liquid nozzles 85a and 85b, and an actuator 86.
  • the roll-type cleaning member 82a cleans the front surface (top surface) of the wafer W
  • the roll-type cleaning member 82b cleans the back surface (bottom surface) of the wafer W. More specifically, the roll-type cleaning member 82a cleans the peripheral portion of the front surface of the wafer W by rotating while contacting the peripheral portion of the front surface.
  • the roll-type cleaning member 82b is disposed opposite the roll-type cleaning member 82a, i.e., below the roll-type cleaning member 82a.
  • the roll-type cleaning member 82b cleans the peripheral portion of the back surface of the wafer W by rotating while contacting the peripheral portion of the back surface.
  • the roll-type cleaning member 82a is connected to a motor 83a via a shaft 87a.
  • the rotation of the motor 83a rotates the roll-type cleaning member 82a.
  • the direction of rotation of the roll-type cleaning member 82a is from the center of the wafer W toward its periphery at the position where it contacts the wafer W (counterclockwise as viewed from the arrow B).
  • the actuator 86 allows the roll-type cleaning member 82a to move in the tangential direction (i.e., the longitudinal (axial) direction of the roll-type cleaning member 82a), radial direction and/or vertical direction of the wafer W.
  • the cleaning efficiency is improved by the roll-type cleaning member 82a moving (oscillating) in the tangential, radial and vertical directions of the wafer W while cleaning the peripheral portion of the wafer W.
  • the direction of movement (oscillation) may be one of the tangential, radial and vertical directions, or two directions in any combination.
  • the radial position can be set arbitrarily.
  • the actuator 86 also allows the roll-type cleaning member 82a to move in the radial direction of the wafer W.
  • the roll-type cleaning member 82a When the wafer W is not being cleaned and the roll-type cleaning member 82a is on standby, it is in a retracted position away from the position where the wafer W is placed in the outer circumferential direction.
  • the roll-type cleaning member 82a moves from the retracted position toward the center of the wafer W to a cleaning position where it comes into contact with the wafer W. Once cleaning of the peripheral portion of the wafer W is complete, the roll-type cleaning member 82a moves in the outer circumferential direction of the wafer W toward the retracted position.
  • the roll-type cleaning members 82a and 82b may move together (or synchronously) in the radial direction of the wafer W, or may move independently of each other.
  • the roll-type cleaning members 82a and 82b may move together (or synchronously) in the tangential direction of the wafer W.
  • the roll-type cleaning members 82a and 82b may be movable in the vertical direction (perpendicular to the wafer W).
  • the cleaning liquid nozzle 84a and the rinsing liquid nozzle 85a are positioned above the wafer W.
  • the cleaning liquid nozzle 84a supplies a cleaning liquid such as a chemical liquid or pure water to the peripheral portion of the surface of the wafer W
  • the rinsing liquid nozzle 85a supplies a rinsing liquid such as pure water to the peripheral portion of the surface of the wafer W.
  • the direction in which the cleaning liquid nozzle 84a and the rinsing liquid nozzle 85a supply the liquid (cleaning liquid and rinsing liquid) is from the center of the wafer W toward the outside. This is to prevent contaminated liquid from remaining on the wafer W for a long time.
  • the cleaning liquid nozzle 84b and the rinsing liquid nozzle 85b are positioned below the wafer W, and supply liquid (cleaning liquid and rinsing liquid) to the back surface of the wafer W when cleaning the peripheral portion of the back surface of the wafer W.
  • the rest are the same as the cleaning liquid nozzle 84a and the rinsing liquid nozzle 85a.
  • the peripheral edge of the wafer W is cleaned as follows. While the substrate holder 41 holds and rotates the wafer W, cleaning liquid nozzles 84a, 84b supply cleaning liquid to the front and back surfaces of the wafer W, respectively. In this state, the roll-type cleaning members 82a, 82b rotate in contact with the peripheral edge of the front surface of the wafer W and the peripheral edge of the back surface of the wafer W, respectively, thereby cleaning the peripheral edge of the front surface of the wafer W and the peripheral edge of the back surface of the wafer W.
  • the configuration of the peripheral edge cleaning device is not limited to the configuration of the peripheral edge cleaning device described with reference to Figures 7 and 8.
  • the configuration of the peripheral edge cleaning device is arbitrary as long as it can clean the peripheral edge of the wafer W, and the substrate cleaning device can be equipped with a known peripheral edge cleaning device.
  • the peripheral edge cleaning device may be a device that cleans the peripheral edge of the wafer W by contacting a cleaning tape with the peripheral edge of the wafer W.
  • a substrate cleaning apparatus having a substrate cleaning tool 42 that cleans the front surface (top surface) of the wafer W is described.
  • a substrate cleaning apparatus having a substrate cleaning tool 42 that cleans the back surface (bottom surface) of the wafer W is described.
  • FIG. 9 is a schematic top view of a substrate cleaning apparatus according to another embodiment
  • FIG. 10 is a schematic side view of the substrate cleaning apparatus shown in FIG. 9.
  • the configuration of this embodiment that is not specifically described is similar to the embodiment described above, and therefore redundant description will be omitted.
  • the substrate cleaning apparatus shown in Figures 9 and 10 differs from the above-described embodiment in that it has multiple substrate cleaning tools 42 for cleaning the back side of a substrate instead of a substrate cleaning tool 42 for cleaning the front side of a substrate. Furthermore, the substrate cleaning tool 42 shown in Figures 9 and 10 has a similar configuration to the substrate cleaning tool 42 according to the above-described embodiment, but differs from the substrate cleaning tool 42 according to the above-described embodiment in that it is inverted and arranged so that the cleaning member 56 faces upward.
  • the substrate cleaning tool 42 may further include a pure water supply mechanism 60 (see FIG. 4) for cleaning the cleaning member 56 while preventing the cleaning member 56 from drying. Furthermore, the cleaning member 56 of the substrate cleaning tool 42 may have a surface 56a as described with reference to FIGS. 6A to 6E. Furthermore, the substrate cleaning device may include a peripheral cleaning device 80 as described with reference to FIGS. 7 and 8.
  • the substrate holder 41 in this embodiment includes multiple rollers 53 that can contact the peripheral edge of the wafer W, and a roller rotation mechanism (not shown) for rotating each roller 53 around its axis.
  • multiple (six in FIG. 9) substrate cleaning tools 42 are arranged below the wafer W.
  • the wafer W is first held by the substrate holder 41.
  • the cleaning members 56 of each substrate cleaning tool 42 contact the back surface of the wafer W held by the substrate holder 41.
  • a fluid is supplied to the Bernoulli chuck 55 of the substrate cleaning tool 42, and the wafer W held by the substrate holder 41 is rotated.
  • the cleaning members 56 are pressed against the back surface of the wafer W with a pressing force corresponding to the suction force (negative pressure) generated between the surface of the Bernoulli chuck 55 and the back surface of the rotating wafer W.
  • the multiple substrate cleaning tools 42 are arranged so that the multiple cleaning members 56 can clean almost the entire back surface of the wafer W rotated by the substrate holder 41.
  • the cleaning member 56 presses the back surface of the wafer W in response to the suction force generated by the Bernoulli chuck 55. That is, the cleaning member 56 presses the back surface of the wafer W with a pressing force acting in the opposite direction to the suction force generated by the Bernoulli chuck 55. Therefore, even if the pressing force with which the cleaning member 56 is pressed against the wafer W is increased to improve cleaning efficiency, excessive stress is prevented from being applied to the wafer W, and as a result, damage to the wafer W during cleaning can be prevented.
  • the substrate cleaning apparatus shown in Figures 9 and 10 may also have a cleaning device 75 for cleaning each cleaning member 56 (see Figure 10).
  • the configuration of the cleaning device 75 is also arbitrary as long as it is capable of cleaning all of the cleaning members 56, and a known configuration may be adopted.
  • the cleaning device 75 shown in FIG. 10 has a cleaning plate 76 and a pure water supply nozzle 77, similar to the cleaning device 75 described with reference to FIG. 1.
  • the cleaning surface 78 of the cleaning plate 76 faces downward so as to face the surface of the cleaning member 56 facing upward.
  • the cleaning device 75 has a cleaning plate moving mechanism 88 that moves the cleaning plate 76 and the pure water supply nozzle 77 to a position above each cleaning member 56 and presses and rotates the cleaning plate 76 against the cleaning members 56.
  • the configuration of the cleaning plate moving mechanism 88 can be a known configuration, so detailed illustration is omitted.
  • the cleaning plate moving mechanism 88 includes a robot arm to which the cleaning plate 76 and the pure water supply nozzle 77 are fixed, and a moving device that moves the robot arm to a position above each cleaning member 56 while moving the cleaning plate 76 up and down relative to the robot arm.
  • FIG. 11 is a top view that shows a schematic diagram of a substrate cleaning apparatus according to yet another embodiment
  • FIG. 12 is a side view that shows a schematic diagram of the substrate cleaning apparatus shown in FIG. 11.
  • the configuration of this embodiment that is not specifically described is similar to the embodiment described with reference to FIG. 9 and FIG. 10, and therefore a duplicated description will be omitted.
  • the substrate cleaning apparatus shown in Figures 11 and 12 also has multiple (two in Figure 11) substrate cleaning tools 42.
  • the substrate cleaning tools 42 shown in Figures 11 and 12 are also arranged so that the cleaning members 56 face upward, and are further arranged along the radial direction of the wafer W.
  • the wafer W is sucked toward the Bernoulli chuck 55 of the substrate cleaning tool 42 arranged below the wafer W, and the cleaning members 56 are pressed against the back surface of the wafer W with a pressure corresponding to the suction force.
  • the substrate cleaning apparatus further includes a linear movement mechanism 90 for moving the substrate cleaning tool 42 in the horizontal direction.
  • the linear movement mechanism 90 functions as a cleaning tool movement mechanism for moving the substrate cleaning tool 42 along the radial direction of the wafer W while the wafer W is being cleaned.
  • the linear movement mechanism 90 includes a cleaning tool actuator 93 for moving the substrate cleaning tool 42, and a guide rail 94 for guiding the movement of the substrate cleaning tool 42.
  • the cleaning tool actuator 93 is connected to the control device 8, and the control device 8 can control the position of the substrate cleaning tool 42 relative to the back surface of the wafer W by controlling the operation of the cleaning tool actuator 93.
  • the wafer W is first held by the substrate holding part 41.
  • the cleaning members 56 of each substrate cleaning tool 42 contact the back surface of the wafer W held by the substrate holding part 41.
  • a fluid is supplied to the Bernoulli chuck 55 of the substrate cleaning tool 42, and the wafer W held by the substrate holding part 41 is rotated.
  • the cleaning member 56 is pressed against the back surface of the wafer W with a pressing force corresponding to the suction force (negative pressure) generated between the surface of the Bernoulli chuck 55 and the back surface of the rotating wafer W.
  • the cleaning tool actuator 93 of the linear movement mechanism 90 is operated to oscillate the substrate cleaning tool 42 in the radial direction of the wafer W.
  • the oscillation width of the substrate cleaning tool 42 is set so that the multiple cleaning members 56 can clean substantially the entire back surface of the wafer W.
  • the linear movement mechanism 90 moves the substrate cleaning tool 42 until the outer edge of the chuck body 55d (see FIG. 4) of the Bernoulli chuck 55 passes over the outer edge of the wafer W, there is a risk that part of the vacuum formed in the space between the front surface of the chuck body 55d of the Bernoulli chuck 55 and the rear surface of the wafer W may be destroyed.
  • the substrate cleaning device is equipped with a peripheral cleaning device 80 as described with reference to FIGS. 7 and 8.
  • the substrate cleaning apparatus according to this embodiment has two substrate cleaning tools 42, but the number of substrate cleaning tools 42 is not limited to this embodiment.
  • the substrate cleaning apparatus may have three or more substrate cleaning tools 42, or may have one substrate cleaning tool 42.
  • the cleaning member 56 presses the back surface of the wafer W in response to the suction force generated by the Bernoulli chuck 55. That is, the cleaning member 56 presses the back surface of the wafer W with a pressing force acting in the opposite direction to the suction force generated by the Bernoulli chuck 55. Therefore, even if the pressing force with which the cleaning member 56 is pressed against the wafer W is increased to improve cleaning efficiency, excessive stress is prevented from being applied to the wafer W, and as a result, damage to the wafer W during cleaning can be prevented.
  • the substrate cleaning apparatus shown in Figures 11 and 12 may also have a cleaning device 75 for cleaning each cleaning member 56.
  • the configuration of the cleaning device 75 is also arbitrary as long as it is capable of cleaning all of the cleaning members 56, and a known configuration may be adopted.
  • the cleaning device 75 shown in Figures 11 and 12 also has a cleaning plate 76 and a pure water supply nozzle 77, similar to the cleaning device 75 described with reference to Figure 1, but the cleaning surface 78 of the cleaning plate 76 faces downward so as to face the surface of the cleaning member 56 facing upward. Furthermore, the cleaning device 75 according to this embodiment is equipped with a cleaning plate actuator 79 that moves the cleaning plate 76 up and down. The cleaning plate actuator 79 is also connected to the control device 8, and the control device 8 is configured to be able to control the operation of the cleaning plate actuator 79.
  • the cleaning plate 76 and the pure water supply nozzle 77 are disposed adjacent to the guide rail 94 outside the substrate holder 41.
  • the cleaning tool actuator 93 of the linear movement mechanism 90 is operated to move the substrate cleaning tool 42 directly below the cleaning plate 76.
  • the cleaning plate actuator 79 is operated to press the cleaning plate 76 against the cleaning member 56 of the substrate cleaning tool 42 with a predetermined pressing force.
  • the substrate cleaning tool 42 may be rotated, the cleaning plate 76 may be rotated, or both the substrate cleaning tool 42 and the cleaning plate 76 may be rotated. This allows the cleaning member 56 of the substrate cleaning tool 42 to be cleaned.
  • the present invention can be used in a substrate cleaning apparatus and a substrate cleaning method in which a cleaning tool is brought into contact with the front or back surface of a substrate such as a wafer to clean the front or back surface of the substrate.
  • Control device 15 Fluid supply line 16 Fluid supply valve 41 Substrate holder 42 Substrate cleaning tool 51 Cleaning tool moving mechanism 55 Bernoulli chuck 56 Cleaning member 75 Cleaning device 90 Linear movement mechanism (cleaning tool moving mechanism)

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention concerne un dispositif de nettoyage de substrat et un procédé de nettoyage de substrat, dans lesquels un outil de nettoyage est mis en contact avec la surface avant ou arrière d'un substrat, par exemple une tranche, pour nettoyer la surface avant ou arrière du substrat. Le dispositif de nettoyage de substrat de la présente invention comprend : une partie de maintien de substrat (41) qui maintient et fait tourner une partie de bord périphérique d'un substrat (W) ; et au moins un outil de nettoyage de substrat (42) qui vient en contact avec la surface avant ou arrière du substrat (W) maintenu par la partie de maintien de substrat (41) et nettoie la surface avant ou arrière du substrat (W). L'outil de nettoyage de substrat (42) comprend un mandrin de Bernoulli (55), qui éjecte un fluide pour générer une puissance d'aspiration afin de maintenir par aspiration la surface avant ou arrière du substrat (W), et un élément de nettoyage (56) fixé au mandrin de Bernoulli (55). L'élément de nettoyage (56) est pressé contre la surface avant ou arrière du substrat (W) conformément à la puissance d'aspiration du mandrin de Bernoulli (55).
PCT/JP2023/037874 2022-11-10 2023-10-19 Dispositif de nettoyage de substrat et procédé de nettoyage de substrat WO2024101107A1 (fr)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131672A (ja) * 1997-07-10 1999-02-02 Hitachi Ltd 基板処理方法および基板処理装置
JP2002096037A (ja) * 2000-09-22 2002-04-02 Tokyo Electron Ltd 基板洗浄具及び基板洗浄装置
JP2007329375A (ja) * 2006-06-09 2007-12-20 Komatsu Machinery Corp 薄膜状物体の保持装置
JP2014003238A (ja) * 2012-06-20 2014-01-09 Tokyo Electron Ltd 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP2015126174A (ja) * 2013-12-27 2015-07-06 芝浦メカトロニクス株式会社 基板保持装置及び基板保持方法
JP2015144253A (ja) * 2013-12-25 2015-08-06 株式会社荏原製作所 基板洗浄装置および基板処理装置
JP2021136421A (ja) * 2020-02-28 2021-09-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131672A (ja) * 1997-07-10 1999-02-02 Hitachi Ltd 基板処理方法および基板処理装置
JP2002096037A (ja) * 2000-09-22 2002-04-02 Tokyo Electron Ltd 基板洗浄具及び基板洗浄装置
JP2007329375A (ja) * 2006-06-09 2007-12-20 Komatsu Machinery Corp 薄膜状物体の保持装置
JP2014003238A (ja) * 2012-06-20 2014-01-09 Tokyo Electron Ltd 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP2015144253A (ja) * 2013-12-25 2015-08-06 株式会社荏原製作所 基板洗浄装置および基板処理装置
JP2015126174A (ja) * 2013-12-27 2015-07-06 芝浦メカトロニクス株式会社 基板保持装置及び基板保持方法
JP2021136421A (ja) * 2020-02-28 2021-09-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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