WO2024094145A1 - 一种用于cmp设备的电化学机械抛光及平坦化系统 - Google Patents

一种用于cmp设备的电化学机械抛光及平坦化系统 Download PDF

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Publication number
WO2024094145A1
WO2024094145A1 PCT/CN2023/129483 CN2023129483W WO2024094145A1 WO 2024094145 A1 WO2024094145 A1 WO 2024094145A1 CN 2023129483 W CN2023129483 W CN 2023129483W WO 2024094145 A1 WO2024094145 A1 WO 2024094145A1
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Prior art keywords
polishing
heads
electrode
conductive
power supply
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PCT/CN2023/129483
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English (en)
French (fr)
Inventor
张明琦
周远鹏
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杭州众硅电子科技有限公司
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Publication of WO2024094145A1 publication Critical patent/WO2024094145A1/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Definitions

  • the present invention belongs to the technical field of semiconductor processing, and in particular relates to a method for switching and controlling power during electrochemical polishing of a wafer substrate in a semiconductor processing device, specifically an electrochemical mechanical polishing and planarization system for a CMP device.
  • CMP chemical mechanical planarization
  • the current polishing process mainly shortens the polishing time and improves the polishing efficiency by adjusting the process.
  • the corrosion rate of the chemical liquid is increased by increasing the temperature of the polishing disk surface during grinding. When the temperature is high, it is difficult to ensure the temperature uniformity, so the surface consistency of the polished wafer substrate will be poor.
  • Another way is to increase the pressure between the wafer substrate and the polishing pad to increase the friction between the two, thereby improving the mechanical grinding efficiency, but this method usually has limited effect.
  • the existing polishing technology only relies on chemical corrosion and mechanical grinding, with slow polishing speed and low efficiency.
  • Electrochemical polishing technology can accelerate the corrosion rate of the surface of the wafer substrate material, which can greatly improve the polishing efficiency of materials such as silicon carbide.
  • Some existing CMP equipment has the situation that the number of polishing heads and polishing discs required for work is inconsistent, and the polishing head actually used is switched according to the polishing process.
  • electrochemical polishing is used, a flexible power supply system is required to ensure smooth circuit operation during the switching process of the polishing head.
  • the present invention provides an electrochemical mechanical polishing and planarization system for CMP equipment, which ensures that the polishing head and the polishing table always work under the same circuit current when the polishing head is switched, so as to facilitate the simultaneous operation of multiple polishing heads.
  • an electrochemical mechanical polishing and planarization system for CMP equipment comprising:
  • a power supply having a first electrode and a second electrode
  • a polishing head connected to the rotating bracket and respectively connected to the first electrode of the power supply and having conductivity
  • the polishing table is correspondingly arranged below the rotating bracket, has a conductive chemical liquid, and is respectively connected to the second electrode of the power supply;
  • a switching unit when the rotating bracket drives the polishing head to rotate, is used to switch and connect the corresponding polishing heads and polishing tables, so as to form an electric circuit between the second electrode, the polishing table, the conductive chemical liquid, the conductive wafer substrate, the polishing head, and the first electrode, and form an electrochemical reaction layer on the polishing surface of the conductive wafer substrate;
  • the polishing head can drive the conductive wafer substrate to move relative to the polishing table to achieve chemical mechanical polishing of the electrochemical reaction layer.
  • the number of the polishing heads is not equal to the number of the polishing tables.
  • the number of the polishing heads is greater than the number of the polishing tables, so that a wafer carrier is arranged on the plane where the polishing tables are located.
  • the switching unit is arranged between the first electrode of the power supply and the polishing head, and the number of the power supply is the same as the number of the polishing tables.
  • the switching unit includes a first part and a second part, the first part is provided with a first conductive contact having the same number as the polishing table, and the first conductive contact is connected to the first electrode; the second part is provided with a second conductive contact having the same number as the polishing head, and the second conductive contact is connected to the second electrode and the polishing head, and the second part can rotate synchronously with the polishing head.
  • the conductive contacts are metal contacts.
  • the switching unit is arranged between the second electrode of the power supply and the polishing table, and the number of the power supply is the same as the number of the polishing heads.
  • the switching unit includes an angle sensor and a power switch corresponding to the number of polishing heads.
  • the polishing heads are connected to the power supply and the power switch in a one-to-one correspondence.
  • the angle sensor obtains the corresponding upper and lower positions of the polishing heads and the polishing table
  • the power switch connects the corresponding polishing heads and the power supply.
  • the power switch is a relay switch corresponding to the number of polishing heads, or a multi-throw switch.
  • a polishing pad is provided on the upper surface of the polishing table, which has holes running through the thickness direction, and a conductive chemical liquid is placed in the holes.
  • the number of the polishing tables is three, the number of the polishing heads is four, and the rotating bracket is a cross bracket.
  • the beneficial effects of the present invention are as follows: 1) electrochemical mechanical polishing of conductive wafer substrates, compared with mechanical polishing or conventional chemical mechanical polishing/planarization, introduces electrochemical 1)
  • the electrochemical polishing system is a CMP equipment with different numbers of polishing heads and polishing tables, so that the wafer substrate on each polishing table can achieve effective electrochemical polishing effect; 2)
  • the switching unit switches the power supply path in time according to the actual working situation to ensure that the polishing head and the polishing table always keep the same current; 3)
  • the switching unit has an interlocking function to ensure that a single polishing head is not connected to multiple power supplies or a single power supply is not connected to multiple polishing heads, thereby ensuring the safety of the equipment; 4)
  • the power supply system uses a safe voltage below 36V to provide electrochemical polishing function for CMP equipment and ensure the safety of human contact.
  • FIG. 1 is a schematic diagram of the matching structure of a polishing head and a polishing table in the present invention.
  • FIG. 2 is a schematic diagram showing the principle of the first embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a switching unit in an embodiment of the present invention.
  • FIG. 4 is a top view of the polishing pad in Embodiment 1 of the present invention.
  • FIG5 is a cross-sectional view of the polishing pad in Embodiment 1 of the present invention.
  • FIG6 is a schematic diagram showing the principle of the second embodiment of the present invention.
  • An electrochemical mechanical polishing and planarization system for CMP equipment includes a power supply 1 having a first electrode 11 and a second electrode 12, a conductive polishing head 2, a polishing table 3, and a switching unit 4.
  • All polishing heads 2 are connected to the rotating bracket 21 and are respectively connected to the first electrode 11 of the power supply 1.
  • the polishing tables 3 are correspondingly arranged below the rotating bracket 21, with conductive chemical liquid, and are respectively connected to the second electrode 12 of the power supply 1.
  • the number of polishing heads 2 and polishing tables 3 is not equal, and of course in other embodiments, the number of the two can also be equal.
  • the switching unit 4 is used to switch the connection between the upper and lower corresponding polishing heads 2 and the polishing table 3, so as to form an electric circuit between the second electrode 12, the polishing table 3, the conductive chemical liquid, the conductive wafer substrate (not shown in the figure), the polishing head 2, and the first electrode 11, and form an electrochemical reaction layer on the polishing surface of the conductive wafer substrate.
  • the generation principle of the above electrochemical reaction layer is the prior art and will not be repeated here.
  • the polishing head 2 drives the conductive wafer substrate to move relative to the polishing table 3, thereby achieving chemical mechanical polishing of the electrochemical reaction layer.
  • the above two steps of generating the electrochemical reaction layer and chemical mechanical polishing can be performed simultaneously or sequentially, without specific limitation.
  • the number of polishing heads 2 is greater than the number of polishing tables 3, and the specific difference is not limited.
  • the number of polishing heads 2 is four, and all polishing heads 2 are connected to a rotating bracket 21.
  • the rotating bracket 21 is a cross bracket, so the central angle between adjacent polishing heads 2 is 90°.
  • the number of polishing tables 3 is three, so that a wafer carrier can be set on the plane where the polishing table 3 is located. Specifically, there can be three polishing tables 3 and one wafer carrier.
  • the polishing tables 3 are evenly spaced along the circumference, and the center angle between adjacent polishing tables 3 is 90°.
  • the switching unit 4 is disposed between the first electrode 11 of the power supply 1 and the polishing head 2, and the second electrode 12 of the power supply 1 is connected to the polishing table 3.
  • the number of the power supply 1 is the same as the number of the polishing tables 3, which is also three.
  • the switching unit 4 includes a first body 41 and a second body 42.
  • the lower surface of the first body 41 is provided with first conductive contacts 411, the number of which is the same as the number of the polishing table 3, which is also three, and the three first conductive contacts 411 are respectively connected to the first electrodes 11 of the three power sources 1.
  • the upper surface of the second body 42 is provided with second conductive contacts 421, the number of which is the same as the number of the polishing heads 2, which is also four, and the four second conductive contacts 421 are respectively connected to the power source 1 and the four polishing heads 2.
  • the above-mentioned first conductive contacts 411 and second conductive contacts 421 can be metal contacts.
  • the position of the first body 41 is relatively fixed, and the specific fixing method is not limited.
  • the second body 42 can rotate synchronously with the polishing head 2, and the specific implementation method is not limited.
  • a polishing pad 31 is disposed on the upper surface of the polishing table 2, as shown in Figures 4 and 5, and has a plurality of holes 311 extending through the thickness direction, with a radius R ⁇ 3 mm.
  • the holes 311 contain conductive chemical liquid, and the total area of the holes 311 accounts for 5-70% of the area of the polishing pad 31.
  • the number of polishing heads 2 and polishing tables 3 is not equal.
  • Each polishing head 2 and polishing table 3 has a number.
  • the three polishing heads 2 corresponding to the polishing table 3 are in working state, and the other polishing head 2 is in standby state.
  • the four polishing heads 2 are fixed on the same cross rotating bracket 21.
  • the cross rotating bracket 21 can drive the four polishing heads 2 to rotate, thereby switching the polishing heads 2 actually working to achieve different polishing processes.
  • the rotating shaft 211 of the cross rotating bracket 21 has an angle sensor, which can record the angle of each polishing head 2 in combination with the number of the polishing head 2. Head 2 position.
  • the three polishing heads 2 in working state are always in the same current loop with the corresponding polishing table 3.
  • the holes 311 of the polishing pad 31 on the polishing table 3 are filled with conductive polishing liquid, so that the circuit is fully turned on, and electrochemical corrosion acts on the conductive wafer substrate, combined with mechanical grinding, to accelerate the polishing speed of the conductive wafer substrate. Due to the needs of the process, the position of the polishing head 2 needs to be switched.
  • the switching unit 4 is disposed between the second electrode 12 of the power supply 1 and the polishing table 3 .
  • the number of the power supply 1 is the same as the number of the polishing heads 2 , both being four, and the number of the polishing tables 3 is three.
  • the switching unit 4 includes an angle sensor, and a power switch 43 corresponding to the number of polishing heads 2, and the polishing heads 2 are connected to the power supply 1 and the power switch 43 in a one-to-one correspondence.
  • the angle sensor obtains the upper and lower corresponding positions of the polishing head 2 and the polishing table 3
  • the power switch 43 connects the corresponding polishing head 2 and the power supply 1.
  • the power switch 43 has an interlocking function, so that a single polishing head 2 can only be connected to a single power supply 1 at most at the same time, and a single power supply 1 can only be connected to one polishing head 2 at most at the same time.
  • the above interlocking function can be realized by the existing technology and will not be repeated.
  • the power switch 43 is a relay switch corresponding to the number of the polishing heads 2, or a multi-throw switch.
  • a four-channel power supply 1 (or two two-channel power supplies or four single-channel power supplies) with a maximum voltage of 36V.
  • the first electrode 11 of each current channel is connected to different polishing heads 2 respectively, and the second electrode 12 is connected in parallel to three power switches 43.
  • the power switches 43 and the angle sensor constitute a switching unit 4.
  • the power switch 43 can be composed of four relay switches or a four-throw switch.
  • Each polishing table 3 is connected to a power switch 43 with a wire. After the cross-rotating bracket 21 is rotated to adjust the position of the polishing head 2, the position of each polishing head 2 is fed back to the power controller through the angle sensor.
  • the power controller connects the circuit on the polishing head 1 located directly above each polishing table 3 through the power switch 43, and each group of polishing tables 3 and polishing heads 1 are in the same current loop.
  • the holes 311 of the polishing pad 31 of the polishing table 3 are filled with conductive polishing liquid, so that the circuit is completely turned on, and electrochemical corrosion acts on the conductive wafer substrate, combined with mechanical grinding, to accelerate the polishing speed of the conductive wafer substrate.
  • the position of the polishing head 1 needs to be rotated and switched.
  • the power switch 43 disconnects all circuits. After the position of the polishing head 1 is switched, different power channels are connected again according to the position of each polishing head 1.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本发明公开了一种用于CMP设备的电化学机械抛光及平坦化系统，包括供电源，具有第一、第二电极；抛光头，连接于转动支架，分别与供电源的第一电极连接，有导电性；抛光台，对应设于转动支架下方，有导电化学液，分别与供电源的第二电极连接；切换单元，在转动支架带动抛光头旋转，用于切换连通上下对应的抛光头和抛光台，以在第二电极、抛光台、导电化学液、导电型晶圆衬底、抛光头、第一电极之间形成通电回路，在导电型晶圆衬底的抛光面形成电化学反应层；抛光头可带动导电型晶圆衬底相对抛光台活动，实现对电化学反应层的化学机械抛光。本发明衬底材料去除率、抛光/平坦化速度提高，运营成本降低；适用于抛光头与抛光台数量不一致的设备。

Description

一种用于CMP设备的电化学机械抛光及平坦化系统 技术领域
本发明属于半导体加工技术领域，尤其是涉及一种半导体加工设备中晶圆衬底电化学抛光时电源的切换与控制的方法，具体是一种用于CMP设备的电化学机械抛光及平坦化系统。
背景技术
在目前的半导体集成电路芯片制造流程中，化学机械平坦化(CMP)是其中一项重要的工艺步骤。将晶圆衬底置于抛光头和抛光垫之间，同时旋转抛光头和抛光垫，利用抛光垫表面沟槽中的抛光液对晶圆衬底表面进行腐蚀，同时具有一定粗糙度的抛光垫表面对其进行研磨，从而实现化学机械平坦化的过程。
当前的抛光工艺主要通过调整工艺来缩短抛光时间，提升抛光效率。如依靠提升研磨时抛光盘表面的温度来增加化学液的腐蚀速度，温度较高时难以保证温度的均匀性，因此会使抛光的晶圆衬底表面一致性较差。另外一种方式是增加晶圆衬底与抛光垫之间的压力来提升二者之间的摩擦力，进而提升机械研磨效率，但这种方法通常效果有限。尤其是对于一些硬度较高的新型半导体材料如碳化硅等，现有的抛光技术仅仅依靠化学腐蚀和机械研磨的方式，抛光速度慢，效率低。而电化学抛光技术可以加速晶圆衬底材料表面的腐蚀速度，可以大大提升碳化硅等材料的抛光效率。
现有的一些CMP设备，存在所需要工作的抛光头和抛光盘的数量不一致的情况，根据抛光的工艺来切换实际使用的抛光头。因此使 用电化学方式抛光时，需要具有灵活的电源系统，来保证抛光头在切换过程中电路的畅通性。
发明内容
为了克服现有技术的不足，本发明提供一种在抛光头切换时保证抛光头和抛光台始终处于同一回路的电流下工作，便于多个抛光头同时工作的用于CMP设备的电化学机械抛光及平坦化系统。
本发明解决其技术问题所采用的技术方案是：一种用于CMP设备的电化学机械抛光及平坦化系统，包括：
供电源，具有第一电极和第二电极；
抛光头，其连接于转动支架，且分别与供电源的第一电极连接，并具有导电性；
抛光台，其对应设于转动支架的下方，带有导电化学液，且分别与供电源的第二电极连接；
切换单元，在转动支架带动抛光头旋转时，用于切换连通上下对应的抛光头和抛光台，以在第二电极、抛光台、导电化学液、导电型晶圆衬底、抛光头、第一电极之间形成通电回路，在导电型晶圆衬底的抛光面形成电化学反应层；
所述抛光头可带动导电型晶圆衬底相对抛光台活动，以实现对电化学反应层的化学机械抛光。
进一步的，所述抛光头的数量与抛光台的数量不相等。
进一步的，所述抛光头的数量大于抛光台的数量，以在抛光台所在平面设置载片台。
进一步的，所述切换单元设于供电源的第一电极和抛光头之间，所述供电源的数量与抛光台的数量相同。
进一步的，所述切换单元包括第一部体和第二部体，所述第一部体设有与抛光台数量相同的第一导电触点，该第一导电触点与第一电极连接；所述第二部体设有与抛光头数量相同的第二导电触点，该第二导电触点与第二电极连接抛光头连接，且第二部体可随抛光头同步转动。
进一步的，所述导电触点为金属触点。
进一步的，所述切换单元设于供电源的第二电极和抛光台之间，所述供电源的数量与抛光头的数量相同。
进一步的，所述切换单元包括角度传感器，及与抛光头数量对应的电源切换器，所述抛光头与供电源、电源切换器一一对应连接，当角度传感器获取上下对应的抛光头和抛光台位置时，电源切换器连通对应的抛光头和供电源。
进一步的，所述电源切换器为与抛光头数量对应的继电器开关，或者为一个多掷开关。
进一步的，所述抛光台上表面设有抛光垫，其具有贯穿厚度方向的孔洞，该孔洞内容置有导电化学液。
进一步的，所述抛光台的数量为三个，所述抛光头的数量为四个，所述转动支架为十字支架。
本发明的有益效果是，1)电化学机械抛光导电型晶圆衬底，相较于机械抛光或常规化学机械抛光/平坦化，引入晶圆衬底表面电化 学反应，衬底材料去除率、抛光/平坦化速度显著提高，设备运营成本显著降低；2)特别适用于抛光头与抛光台数量不一致的CMP设备，使每个抛光台上的晶圆衬底都取得到有效的电化学抛光效果；3)切换单元根据实际工作情况及时切换电源通路，保证抛光头和抛光台始终保持在同一路电流下；4)切换单元带有互锁功能，保证不会出现单个抛光头连接多个电源或单个电源连接多个抛光头的情况，保证设备的安全；5)电源系统使用36V以下安全电压，为CMP设备提供电化学抛光功能，保证人体接触的安全性。
附图说明
图1为本发明中抛光头和抛光台的配合结构示意图。
图2为本发明实施例一的原理示意图。
图3为本发明实施例一中切换单元的示意图.
图4为本发明实施例一中抛光垫的俯视图。
图5为本发明实施例一中抛光垫的剖视图。
图6为本发明实施例二的原理示意图。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案，下面将结合本发明实施例中的附图，对发明实施例中的技术方案进行清楚、完整的描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
一种用于CMP设备的电化学机械抛光及平坦化系统，包括具有第一电极11和第二电极12的供电源1，具有导电性的抛光头2，抛光台3，及切换单元4。
所有的抛光头2连接在转动支架21上，且分别与供电源1的第一电极11连接。抛光台3对应设置在转动支架21的下方，带有导电化学液，且分别与供电源1的第二电极12连接。在本实施例中，抛光头2和抛光台3的数量不相等，当然在其他实施例中，两者的数量也可以相等。
在转动支架21带动所有抛光头2同步旋转时，切换单元4用于切换连通上下对应的抛光头2和抛光台3，从而在第二电极12、抛光台3、导电化学液、导电型晶圆衬底(图中未示出)、抛光头2、第一电极11之间形成通电回路，在导电型晶圆衬底的抛光面形成电化学反应层。上述电化学反应层的生成原理为现有技术，不再赘述。
抛光头2带动导电型晶圆衬底相对抛光台3活动，从而实现对电化学反应层的化学机械抛光。上述电化学反应层的生成和化学机械抛光的两个步骤可以同时进行，也可以先后进行，具体不作限制。
实施例一
如图1所示，抛光头2的数量大于抛光台3的数量，具体相差的数量不作限制。在本实施例中，抛光头2的数量为四个，所有抛光头2连接在转动支架21上，转动支架21为十字支架，因此相邻抛光头2之间的圆心角为90°。抛光台3的数量为三个，从而在抛光台3所在平面可以设置载片台，具体的，可以是三个抛光台3和一个载片台 沿着周向均匀间隔布设，相邻抛光台3之间的圆心角为90°。
如图2所示，切换单元4设置在供电源1的第一电极11和抛光头2之间，供电源1的第二电极12与抛光台3连接。供电源1的数量与抛光台3的数量相同，也为三个。
如图3所示，切换单元4包括第一部体41和第二部体42，第一部体41的下表面设置有第一导电触点411，其数量与抛光台3的数量相同，也为三个，且三个第一导电触点411分别与三个供电源1的第一电极11连接。第二部体42的上表面设置有第二导电触点421，其数量与抛光头2的数量相同，也为四个，且四个第二导电触点421分别与供电源1和四个抛光头2连接。上述第一导电触点411和第二导电触点421可以是金属触点。第一部体41的位置相对固定，具体的固定方式不作限制，第二部体42可以随着抛光头2同步转动，具体的实现方式不作限制。
在抛光台2的上表面设置有抛光垫31，如图4、图5所示，其具有贯穿厚度方向的多个孔洞311，其半径R≥3mm。孔洞311内容置有导电化学液，孔洞311的总面积占抛光垫31面积的5-70％。
本发明中抛光头2和抛光台3的数量不相等，每个抛光头2和抛光台3具有编号，与抛光台3相对应的三个抛光头2处于工作状态，另一个抛光头2处于待命状态。四个抛光头2固定于同一个十字转动支架21上，十字转动支架21可带动四个抛光头2旋转，从而切换实际工作的抛光头2，实现不同的抛光工艺。十字转动支架21的旋转轴211上具有角度传感器，结合抛光头2的编号，可以记录每个抛光 头2的位置。
处于工作状态的三个抛光头2时刻与对应的抛光台3处于同一电流回路中。抛光工艺开始后，抛光台3上抛光垫31的孔洞311中布满导电的抛光液，使电路完全导通，电化学腐蚀作用于导电型晶圆衬底，结合机械研磨，加速导电型晶圆衬底的抛光速度。因工艺的需要，抛光头2的位置需要切换，抛光头2位置切换之后，由于切换单元4位于抛光头2端的三个第一导电触点411位置始终固定与抛光台3对应，因此抛光头2切换位置之后，仍然保持处于工作状态时的另外三个抛光头2与正下方的三个抛光台3处于同一电流回路中。
实施例二
如图6所示，切换单元4设置在供电源1的第二电极12和抛光台3之间，供电源1的数量与抛光头2的数量相同，均为四个，抛光台3的数量为三个。
切换单元4包括角度传感器，及与抛光头2数量对应的电源切换器43，抛光头2与供电源1、电源切换器43一对一对应连接。当角度传感器获取上下对应的抛光头2和抛光台3位置时，电源切换器43连通对应的抛光头2和供电源1，电源切换器43具有互锁功能，使得单个抛光头2同时最多只能连接单个供电源1和单个供电源1同时最多只能连接一个抛光头2。上述互锁功能为现有技术可以实现，不再赘述。
电源切换器43为与抛光头2数量对应的继电器开关，或者为一个多掷开关。
一个电压最高为36V的四通道供电源1(或为两个二通道供电源或为四个单通道供电源)每个电流通道的第一电极11分别连接不同的抛光头2，第二电极12并联三个电源切换器43，上述电源切换器43和角度传感器组成切换单元4，电源切换器43可由四个继电器开关或一个四掷开关组成。每个抛光台3用导线分别连接一个电源切换器43。十字转动支架21经过旋转调整好抛光头2的位置后，通过角度传感器将每个抛光头2的位置反馈给电源控制器，电源控制器通过电源切换器43接通位于每个抛光台3正上方的抛光头1上的电路，且每组抛光台3和抛光头1处于同一电流回路中。
抛光工艺开始后，抛光台3的抛光垫31孔洞311中布满导电的抛光液，使电路完全导通，电化学腐蚀作用于导电型晶圆衬底，结合机械研磨，加速导电型晶圆衬底的抛光速度。因工艺的需要，抛光头1的位置需要旋转切换，此时电源切换器43断开所有电路，抛光头1位置切换之后，重新根据每个抛光头1的位置，接通不同的电源通道。
上述具体实施方式用来解释说明本发明，而不是对本发明进行限制，在本发明的精神和权利要求的保护范围内，对本发明作出的任何修改和改变，都落入本发明的保护范围。

Claims (11)

  1. 一种用于CMP设备的电化学机械抛光及平坦化系统，其特征在于，包括：
    供电源(1)，具有第一电极(11)和第二电极(12)；
    抛光头(2)，其连接于转动支架(21)，且分别与供电源(1)的第一电极(11)连接，并具有导电性；
    抛光台(3)，其对应设于转动支架(21)的下方，带有导电化学液，且分别与供电源的第二电极(12)连接；
    切换单元(4)，在转动支架(21)带动抛光头(2)旋转时，用于切换连通上下对应的抛光头(2)和抛光台(3)，以在第二电极(12)、抛光台(3)、导电化学液、导电型晶圆衬底、抛光头(2)、第一电极(11)之间形成通电回路，在导电型晶圆衬底的抛光面形成电化学反应层；
    所述抛光头(2)可带动导电型晶圆衬底相对抛光台活动，以实现对电化学反应层的化学机械抛光。
  2. 根据权利要求1所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述抛光头(2)的数量与抛光台(3)的数量不相等。
  3. 根据权利要求1所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述抛光头(2)的数量大于抛光台(3)的数量，以在抛光台(3)所在平面设置载片台。
  4. 根据权利要求1所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述切换单元设于供电源(1)的第一电极(11)和抛光头(2)之间，所述供电源(1)的数量与抛光台(3)的数量相同。
  5. 根据权利要求1或4所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述切换单元(4)包括第一部体(41)和第二部体(42)， 所述第一部体(41)设有与抛光台(3)数量相同的第一导电触点(411)，该第一导电触点(411)与第一电极(11)连接；所述第二部体(42)设有与抛光头(2)数量相同的第二导电触点(421)，该第二导电触点(421)与抛光头(2)连接，且第二部体(42)可随抛光头(2)同步转动。
  6. 根据权利要求5所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述导电触点为金属触点。
  7. 根据权利要求1所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述切换单元(4)设于供电源(1)的第二电极(12)和抛光台(3)之间，所述供电源(1)的数量与抛光头(2)的数量相同。
  8. 根据权利要求1或7所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述切换单元(4)包括角度传感器，及与抛光头(2)数量对应的电源切换器(43)，所述抛光头(2)与供电源(1)、电源切换器(43)一一对应连接，当角度传感器获取上下对应的抛光头(2)和抛光台(3)位置时，电源切换器(43)连通对应的抛光头(2)和供电源(1)。
  9. 根据权利要求8所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述电源切换器(43)为与抛光头(2)数量对应的继电器开关，或者为一个多掷开关。
  10. 根据权利要求1所述的用于CMP设备的电化学机械抛光及平坦化系统，其特征在于：所述抛光台(3)上表面设有抛光垫(31)，其具有贯穿厚度方向的孔洞(311)，该孔洞(311)内容置有导电化学液。
  11. 根据权利要求1或3所述的用于CMP设备的电化学机械抛光及平坦化系 统，其特征在于：所述抛光台(3)的数量为三个，所述抛光头(2)的数量为四个，所述转动支架(21)为十字支架。
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