WO2024085089A1 - 反射型マスクブランク、反射型マスク、反射型マスクの製造方法 - Google Patents

反射型マスクブランク、反射型マスク、反射型マスクの製造方法 Download PDF

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Publication number
WO2024085089A1
WO2024085089A1 PCT/JP2023/037235 JP2023037235W WO2024085089A1 WO 2024085089 A1 WO2024085089 A1 WO 2024085089A1 JP 2023037235 W JP2023037235 W JP 2023037235W WO 2024085089 A1 WO2024085089 A1 WO 2024085089A1
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Prior art keywords
film
protective film
reflective mask
mask blank
substrate
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Ceased
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PCT/JP2023/037235
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English (en)
French (fr)
Japanese (ja)
Inventor
誠祥 溝口
剛 富澤
崇平 見矢木
植幸 三浦
大河 筆谷
佑介 小野
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AGC Inc
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Asahi Glass Co Ltd
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Priority to JP2024551780A priority Critical patent/JPWO2024085089A1/ja
Priority to KR1020257016120A priority patent/KR20250095644A/ko
Publication of WO2024085089A1 publication Critical patent/WO2024085089A1/ja
Priority to US19/090,825 priority patent/US20250224663A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Definitions

  • the present invention relates to a reflective mask used in EUV (Etreme Ultra Violet) exposure, which is used in the exposure process of semiconductor manufacturing, a method for manufacturing the same, and a reflective mask blank, which is the original plate for the reflective mask.
  • EUV EUV
  • EUV lithography which uses EUV light with a central wavelength of around 13.5 nm as a light source, has been considered in order to further miniaturize semiconductor devices.
  • a reflective mask has a multilayer reflective film that reflects EUV light formed on a substrate, and an absorber film that absorbs EUV light is patterned on the multilayer reflective film.
  • the EUV light that enters the reflective mask from the illumination optical system of the exposure tool is reflected in areas where there is no absorber film (openings) and absorbed in areas where there is an absorber film (non-openings).
  • the mask pattern is transferred as a resist pattern onto the wafer through the reduced projection optical system of the exposure tool, and subsequent processing is carried out.
  • Patent Document 1 describes a reflective mask blank in which a material containing tantalum is used for the conductive film.
  • the reflective mask and reflective mask blank having the conductive film as described above are repeatedly attracted to and released from the electrostatic chuck during the manufacturing process and during use.
  • the surface of the back side on which the conductive film of the reflective mask blank is disposed may come into contact with the member performing the electrostatic chucking and may be rubbed against each other.
  • the surface of the back side on which the conductive film of the reflective mask blank is disposed may also be simply referred to as the "surface of the back side".
  • the back side refers to the side of the reflective mask blank on which the conductive film is disposed with respect to the substrate.
  • the strength of the surface on the back surface side is low, particles originating from the conductive film may be generated, and therefore the strength of the surface on the back surface side is required to be high.
  • the present inventors have studied the conductive film described in Patent Document 1 and have found that there is room for improvement in the strength of the surface of the conductive film opposite to the substrate.
  • the inventors have found that the above-mentioned problems can be solved when a protective film is provided on a conductive film and the protective film is analyzed by X-ray photoelectron spectroscopy, and a peak of a predetermined binding energy appears, thereby completing the present invention. That is, the inventors discovered that the above problems can be solved by the following configuration.
  • the protective film includes a first element A selected from the group consisting of chromium and tantalum, and one or more second elements selected from the group consisting of boron, carbon, nitrogen, and oxygen;
  • the protective film has a thickness of 5 nm or more, A reflective mask blank, wherein when the protective film is analyzed by X-ray photoelectron spectroscopy, a peak corresponding to the 2p 3/2 orbital of chromium appears at 576.7 eV or less, or a peak corresponding to the 4
  • the protective film contains chromium
  • the protective film contains tantalum, The reflective mask blank according to [2], wherein the content of the second element in the protective film is 20 atomic % or more based on all atoms in the protective film when analyzed by X-ray photoelectron spectroscopy.
  • a method for producing a reflective mask comprising a step of patterning the absorber film of the reflective mask blank according to any one of [1] to [15].
  • [18] Forming a conductive film on one surface of a substrate; forming a protective film on the surface of the conductive film opposite to the substrate side; The method for producing a reflective mask blank according to [1] or [2], wherein the protective film is formed in the presence of one or more gases selected from the group consisting of oxygen gas and nitrogen gas.
  • the protective film is a film formed using a sputtering target,
  • the sputtering target includes a first element A selected from the group consisting of chromium and tantalum;
  • Another object of the present invention is to provide a method for producing a reflective mask using the above-mentioned reflective mask blank, and a reflective mask.
  • FIG. 1 is a schematic diagram showing an example of an embodiment of a reflective mask blank of the present invention.
  • 1A to 1C are schematic diagrams showing an example of a manufacturing process for a reflective mask using the reflective mask blank of the present invention.
  • a numerical range expressed using “to” means a range that includes the numerical values before and after “to” as the lower and upper limits.
  • elements such as boron, carbon, nitrogen, oxygen, silicon, titanium, chromium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, and iridium may be represented by their corresponding element symbols (B, C, N, O, Si, Ti, Cr, Zr, Nb, Mo, Ru, Rh, Pd, Ta, Ir, etc.).
  • the reflective mask blank of the present invention comprises a substrate, a conductive film arranged on one surface of the substrate, a protective film arranged on the opposite side of the conductive film to the substrate side, a multilayer reflective film that reflects EUV light and is arranged on the other surface of the substrate, and an absorber film arranged on the opposite side of the multilayer reflective film to the substrate side.
  • the conductive film and the protective film have different compositions, and the conductive film contains a first element selected from the group consisting of Cr and Ta.
  • the protective film contains chromium and one or more second elements selected from the group consisting of B, C, N, and O, and has a thickness of 2 nm or more.
  • the protective film when the protective film is analyzed by X-ray Photoelectron Spectroscopy (XPS), a peak corresponding to the 2p 3/2 orbital of Cr appears at 576.7 eV or less.
  • another aspect of the reflective mask blank of the present invention comprises a substrate, a conductive film arranged on one surface side of the substrate, a protective film arranged on the opposite side of the conductive film to the substrate side, a multilayer reflective film that reflects EUV light and is arranged on the other surface side of the substrate, and an absorber film arranged on the opposite side of the multilayer reflective film to the substrate side.
  • the conductive film and the protective film have different compositions, and the conductive film contains a first element selected from the group consisting of Cr and Ta.
  • the protective film includes a first element A selected from the group consisting of Cr and Ta, and one or more second elements selected from the group consisting of B, C, N, and O, and the protective film has a thickness of 2 nm or more. Furthermore, when the protective film is analyzed by X-ray photoelectron spectroscopy (XPS), a peak corresponding to the 2p 3/2 orbital of chromium appears at 576.7 eV or less, and a peak corresponding to the 4f 5/2 orbital of tantalum appears at 23.8 eV or more.
  • XPS X-ray photoelectron spectroscopy
  • Fig. 1 is a cross-sectional view showing one embodiment of a reflective mask blank of the present invention.
  • the reflective mask blank 10 shown in Fig. 1 has a protective film 24, a conductive film 22, a substrate 12, a multilayer reflective film 14, and an absorber film 18 in this order.
  • the reflective mask blank 10 may also have a multilayer reflective protection film 16 between the multilayer reflective film 14 and the absorber film 18 .
  • the protective film 24 and the conductive film 22 satisfy any one of the above requirements.
  • the reflective mask blank of the present invention is characterized in that a protective film satisfying the above-mentioned predetermined requirements is disposed on the side of the conductive film opposite to the substrate side.
  • the protective film contains Cr and one or more second elements selected from the group consisting of B, C, N, and O, and is therefore considered to have excellent rigidity.
  • the protective film since the peak corresponding to the 2p3 /2 orbital of Cr appears at a predetermined value or less, the protective film is considered to have a certain degree of toughness.
  • the thickness of the protective film is 2 nm or more, the protective film itself is considered to be less likely to bend. As a result, the reflective mask blank of the present invention has excellent strength on the surface on the back side.
  • the protective film that satisfies the above-mentioned predetermined requirements is disposed on the opposite side of the conductive film from the substrate side.
  • the protective film contains a first element A selected from the group consisting of Cr and Ta, and one or more second elements selected from the group consisting of B, C, N, and O, and is therefore considered to have excellent rigidity.
  • the protective film when the peak corresponding to the 2p 3/2 orbital of Cr appears at a predetermined value or less, the protective film is considered to have a certain degree of toughness.
  • the protective film is considered to have excellent hardness.
  • the thickness of the protective film is 2 nm or more, the protective film itself is considered to be less likely to bend.
  • the strength of the surface on the back side is also excellent.
  • the protective film 24 and the conductive film 22 are provided over the entire surface of the substrate 12, but they may also be provided on only a portion of the substrate 12.
  • the substrate of the reflective mask blank of the present invention preferably has a small thermal expansion coefficient.
  • a substrate with a small thermal expansion coefficient can suppress distortion of the absorber film pattern due to heat during exposure to EUV light.
  • the thermal expansion coefficient of the substrate at 20°C is preferably 0 ⁇ 1.0 ⁇ 10 -7 /°C, and more preferably 0 ⁇ 0.3 ⁇ 10 -7 /°C.
  • Materials with a small thermal expansion coefficient include SiO 2 --TiO 2 type glass, but are not limited thereto.
  • Substrates such as crystallized glass in which ⁇ -quartz solid solution is precipitated, quartz glass, metallic silicon, and metal can also be used.
  • the SiO2 - TiO2 -based glass is preferably a quartz glass containing 90-95% by mass of SiO2 and 5-10% by mass of TiO2 .
  • the TiO2 content is 5-10% by mass, the linear expansion coefficient is approximately zero near room temperature, and there is almost no dimensional change near room temperature.
  • the SiO2 - TiO2 -based glass may contain trace components other than SiO2 and TiO2 .
  • the surface of the substrate on which the multilayer reflective film is laminated (hereinafter also referred to as the "first main surface") preferably has high surface smoothness.
  • the surface smoothness of the first main surface can be evaluated by surface roughness.
  • the surface roughness of the first main surface is preferably 0.15 nm or less in terms of root-mean-square roughness Rq.
  • the surface roughness can be measured by an atomic force microscope, and the surface roughness will be described as the root-mean-square roughness Rq based on JIS-B0601.
  • the first main surface is preferably surface-processed to have a predetermined flatness, in order to improve the pattern transfer accuracy and positional accuracy of a reflective mask obtained by using the reflective mask blank.
  • the flatness is preferably 100 nm or less, more preferably 50 nm or less, and even more preferably 30 nm or less.
  • the flatness can be measured by a flatness measuring device manufactured by Fujinon Corporation.
  • the size and thickness of the substrate are appropriately determined based on the design values of the mask, etc.
  • the outer shape is 6 inches (152 mm) square, and the thickness is 0.25 inches (6.3 mm).
  • the substrate preferably has high rigidity in order to prevent deformation due to film stress of films (multilayer reflective film, absorber film, etc.) formed on the substrate.
  • the Young's modulus of the substrate is preferably 65 GPa or more.
  • the multilayer reflective film of the reflective mask blank of the present invention is not particularly limited as long as it has the desired properties as a reflective film of an EUV mask blank.
  • the multilayer reflective film preferably has a high reflectance to EUV light, and specifically, when EUV light is incident on the surface of the multilayer reflective film at an incident angle of 6°, the maximum reflectance of EUV light at a wavelength of about 13.5 nm is preferably 60% or more, more preferably 65% or more. Similarly, even when a protective film is laminated on the multilayer reflective film, the maximum reflectance of EUV light at a wavelength of about 13.5 nm is preferably 60% or more, more preferably 65% or more.
  • a multilayer reflective film can achieve a high reflectance for EUV light
  • a multilayer reflective film is usually used in which high refractive index layers that exhibit a high refractive index to EUV light and low refractive index layers that exhibit a low refractive index to EUV light are alternately stacked multiple times.
  • the multilayer reflective film may be formed by stacking a high refractive index layer and a low refractive index layer in this order from the substrate side, with one cycle being a laminate structure, and may be formed by stacking a low refractive index layer and a high refractive index layer in this order, with one cycle being a laminate structure, and may be formed by stacking a low refractive index layer and a high refractive index layer in this order, with one cycle being a laminate structure.
  • the high refractive index layer may be a layer containing Si.
  • As the material containing Si in addition to simple Si, a Si compound containing Si and one or more elements selected from the group consisting of B, C, N, and O may be used.
  • the high refractive index layer containing Si By using the high refractive index layer containing Si, a reflective mask having excellent reflectance for EUV light can be obtained.
  • the low refractive index layer a layer containing a metal selected from the group consisting of Mo, Ru, Rh, and Pt, or an alloy thereof can be used.
  • the high refractive index layer is generally made of Si, and the low refractive index layer is generally made of Mo. That is, Mo/Si multilayer reflective film is the most common.
  • the multilayer reflective film is not limited thereto, and Ru/Si multilayer reflective film, Mo/Be multilayer reflective film, Mo compound/Si compound multilayer reflective film, Si/Mo/Ru multilayer reflective film, Si/Mo/Ru/Mo multilayer reflective film, Si/Ru/Mo/Ru multilayer reflective film, Si/Ru/Mo multilayer reflective film, etc. can also be used.
  • each layer constituting the multilayer reflective film and the number of repeat units of the layers can be appropriately selected depending on the film material used and the EUV light reflectivity required for the reflective layer.
  • a Mo/Si multilayer reflective film as an example, to create a multilayer reflective film with a maximum EUV light reflectivity of 60% or more, a Mo film with a thickness of 2.3 ⁇ 0.1 nm and a Si film with a thickness of 4.5 ⁇ 0.1 nm can be laminated so that the number of repeat units is 30 to 60.
  • the layers constituting the multilayer reflective film can be formed to the desired thickness using known film formation methods such as magnetron sputtering and ion beam sputtering.
  • ion particles are supplied from an ion source to a target of a high refractive index material and a target of a low refractive index material.
  • the multilayer reflective film is a Mo/Si multilayer reflective film
  • a Si target is used to first form a Si layer of a predetermined thickness on a substrate using ion beam sputtering.
  • a Mo layer of a predetermined thickness is formed using a Mo target. This Si layer and Mo layer constitute one cycle, and 30 to 60 cycles are stacked to form the Mo/Si multilayer reflective film.
  • the multilayer reflective film protective film that may be possessed by the reflective mask blank of the present invention is provided for the purpose of protecting the multilayer reflective film from damage caused by an etching process (usually a dry etching process) when a pattern is formed in the absorber film by the etching process.
  • etching process usually a dry etching process
  • materials that can achieve the above object include materials containing at least one element selected from the group consisting of Ru, Rh, and Si. It is also preferable that the multilayer reflective protective film contains at least one element selected from the group consisting of Ru and Rh.
  • examples of the above-mentioned materials include Rh-based materials such as simple Ru metal, Ru alloys containing Ru and one or more metals selected from the group consisting of Si, Ti, Nb, Rh, and Zr, simple Rh metal, Rh alloys containing Rh and one or more metals selected from the group consisting of Si, Ti, Nb, Ru, Ta, and Zr, Rh-containing nitrides containing the above-mentioned Rh alloys and nitrogen, and Rh-containing oxynitrides containing the above-mentioned Rh alloys, nitrogen, and oxygen.
  • Other examples of materials that can achieve the above object include Al and nitrides containing these metals and nitrogen, and Al 2 O 3 .
  • materials capable of achieving the above object are preferably Ru metal alone, Ru alloys, Rh metal alone, or Rh alloys.
  • As the Ru alloy a Ru-Si alloy is preferred, and as the Rh alloy, a Rh-Si alloy is preferred.
  • the thickness of the multilayer reflective protective film is not particularly limited as long as it can function as a multilayer reflective protective film.
  • the thickness of the multilayer reflective protective film is preferably 1 to 10 nm, more preferably 1.5 to 6 nm, and even more preferably 2 to 5 nm.
  • the material of the multilayer reflective protective film is Ru metal alone, an Ru alloy, Rh metal alone, or an Rh alloy, and that the multilayer reflective protective film has the above-mentioned preferable film thickness.
  • the multilayer reflective protective film may be a film consisting of a single layer, or may be a multilayer film consisting of multiple layers.
  • each layer constituting the multilayer film is preferably made of the above-mentioned preferred materials.
  • the multilayer reflective protective film is a multilayer film, it is also preferable that the total film thickness of the multilayer film is within the above-mentioned preferred range of protective film thickness.
  • the multilayer reflective protective film can be formed using known film formation methods such as magnetron sputtering and ion beam sputtering.
  • film formation methods such as magnetron sputtering and ion beam sputtering.
  • the absorber film of the reflective mask blank of the present invention is required to have a high contrast between the EUV light reflected by the multilayer reflective film and the EUV light at the absorber film when the absorber film is patterned.
  • the patterned absorber film may function as a binary mask by absorbing EUV light, or may function as a phase shift mask that reflects EUV light while interfering with the EUV light from the multilayer reflective film to create contrast.
  • the absorber film needs to absorb EUV light and have low reflectance for EUV light.
  • the maximum reflectance of EUV light at a wavelength of about 13.5 nm is preferably 2% or less.
  • the absorber film may contain one or more metals selected from the group consisting of Ta, Ti, Sn, and Cr, as well as one or more components selected from the group consisting of O, N, B, Hf, and H. Among these, it is preferable to contain N or B. By containing N or B, the crystal state of the absorber film can be made to have an amorphous or microcrystalline structure.
  • the crystalline state of the absorber film is preferably amorphous. This can improve the smoothness and flatness of the absorber film. In addition, when the smoothness and flatness of the absorber film are improved, the edge roughness of the absorber film pattern is reduced, and the dimensional accuracy of the absorber film pattern can be improved.
  • the thickness of the absorber film is preferably 40 to 70 nm, and more preferably 50 to 65 nm.
  • the reflectance of the absorber film to EUV light is preferably 2% or more. In order to obtain a sufficient phase shift effect, the reflectance of the absorber film is preferably 9 to 15%.
  • the contrast of the optical image on the wafer is improved, and the exposure margin is increased.
  • the material from which the phase shift mask is formed preferably contains a noble metal element, such as Ir, Pt, Pd, Ag, Os or Au.
  • Examples of materials for forming a phase shift mask include metal Ru alone, a Ru alloy containing Ru and one or more metals selected from the group consisting of Cr, Au, Pt, Re, Hf, Ta, W, Ti, and Si, an alloy of Ta and Nb, an oxide containing a Ru alloy or a TaNb alloy and oxygen, a nitride containing a Ru alloy or a TaNb alloy and nitrogen, and an oxynitride containing a Ru alloy or a TaNb alloy, oxygen, and nitrogen.
  • Examples of materials for forming the phase shift mask include simple Ir metal and Ir compounds containing Ir and one or more metals selected from the group consisting of Ta, Cr, Mo, W, Re and Si.
  • the thickness of the absorber film is preferably from 30 to 60 nm, more preferably from 35 to 55 nm.
  • the absorber film may be a single layer film or a multilayer film made up of multiple films.
  • the absorber film is a single layer film, the number of steps in manufacturing the mask blank can be reduced, improving production efficiency.
  • the layer disposed on the side of the absorber film opposite the multilayer reflective film protective film side may be an anti-reflection film when inspecting the absorber film pattern using inspection light (e.g., wavelength 193 to 248 nm).
  • the absorber film can be formed using known film formation methods such as magnetron sputtering and ion beam sputtering.
  • the absorber film can be formed by using a Ru target and supplying a gas containing Ar gas and oxygen gas to perform sputtering.
  • the reflective mask blank of the present invention has a conductive film on the surface (second main surface) opposite to the first main surface of the substrate.
  • the conductive film may include one or more first elements selected from the group consisting of Cr and Ta.
  • the conductive film includes one or more first elements selected from the group consisting of Cr and Ta.
  • the conductive film may include one or more second elements selected from the group consisting of B, C, N, and O.
  • the composition of the conductive film is different from the composition of the protective film, which will be described in detail later. Note that the different compositions include not only the case where the conductive film and the protective film include different elements, but also the case where the conductive film and the protective film include two or more of the same elements and the content ratio of the elements is different between the conductive film and the protective film.
  • the conductive film preferably contains one of Cr and Ta as the first element, and more preferably contains Cr.
  • the conductive film preferably contains N as the second element.
  • the conductive film contains Cr as the first element and at least N as the second element.
  • Specific materials constituting the conductive film include, for example, Cr alone, CrN, CrO, CrON, CrB, CrBN, CrC, CrCN, CrOC, Ta alone, TaN, TaO, TaON, TaB, TaBN, TaC, TaCN, TaOC, CrTaO, and CrTaN, and Cr alone, Cr, CrN, TaN, or TaBN is preferred.
  • CrON refers to a material containing Cr, O, and N, and the content ratio of these elements is not limited.
  • the second element does not contain O.
  • the conductive film preferably has a low sheet resistance, for example, preferably 200 ⁇ / ⁇ or less, and more preferably 100 ⁇ / ⁇ or less.
  • the thickness of the conductive film is preferably from 10 to 1000 nm, and more preferably from 100 to 500 nm.
  • the thickness of the conductive film is determined by X-ray reflectivity (XRR).
  • XRR X-ray reflectivity
  • a Smart Lab HTP manufactured by Rigaku Corporation is used to measure the thickness of the conductive film by XRR.
  • CuK ⁇ rays are used as the X-ray source, the tube voltage is 40 kV, and the tube current is 30 mA.
  • the accompanying software GlobalFit is used for analysis.
  • the conductive film may also have a function of adjusting stress on the second main surface side of the reflective mask blank, i.e., the conductive film can adjust the reflective mask blank to be flat by balancing with stress from various films formed on the first main surface side.
  • the conductive film can be formed by using a known film formation method, for example, a sputtering method such as magnetron sputtering or ion beam sputtering, a CVD method, a vacuum deposition method, or an electrolytic plating method.
  • the N content in the TaN film is preferably 10 at% or more since the hardness of the TaN film against the substrate 11 is improved, more preferably 15 at% or more, even more preferably 20 at% or more, and particularly preferably 35 at% or more.
  • the N content in the TaN film is preferably 65 at% or less since the surface smoothness of the TaN film is improved and the sheet resistance value of the TaN film is reduced, more preferably 60 at% or less, and even more preferably 55 at% or less.
  • the B content in the TaB film is preferably 10 at% or more, since this improves the film adhesion and surface smoothness, more preferably 15 at% or more, and even more preferably 20 at% or more.
  • the B content in the TaB film is preferably 50 at% or less, since this improves the hardness, more preferably 45 at% or less, and even more preferably 40 at% or less.
  • the N content in the CrN film is preferably 3.0 at% or more since the hardness of the CrN film against the substrate 11 is improved, more preferably 3.5 at% or more, and even more preferably 4.0 at% or more.
  • the N content in the CrN film is preferably 20.0 at% or less since the surface smoothness of the CrN film is improved and the sheet resistance value of the CrN film is reduced, more preferably 15.0 at% or less, even more preferably 10.0 at% or less, and particularly preferably 9.0 at% or less.
  • the reflective mask blank of the present invention has a protective film disposed on the side opposite to the substrate side of the conductive film.
  • the protective film include an embodiment X containing Cr and an embodiment Y containing one or more first elements A selected from the group consisting of Cr and Ta.
  • the protective film contains Cr and one or more second elements selected from the group consisting of B, C, N, and O.
  • the protective film preferably contains O as the second element.
  • Specific examples of materials constituting the protective film include CrN, CrO, CrON, CrB, CrBN, CrC, CrCN, and CrOC. Note that notations such as "CrON” refer to materials containing Cr, O, and N, and the content ratio of these elements is not limited as long as the requirements for XPS analysis described below are met.
  • the protective film includes one or more first elements A selected from the group consisting of Cr and Ta, and one or more second elements selected from the group consisting of B, C, N, and O.
  • the protective film preferably includes either Cr or Ta as the first element A, and more preferably includes Cr.
  • the protective film preferably includes O as the second element. It is also preferable that the protective film includes Cr as the first element A, and at least O as the second element.
  • Specific examples of materials constituting the protective film include CrN, CrO, CrON, CrB, CrBN, CrC, CrCN, CrOC, TaN, TaO, TaON, TaB, TaBN, TaC, TaCN, and TaOC. Note that notations such as "CrON” refer to materials containing Cr, O, and N, and the content ratio of these elements is not limited as long as the requirements for XPS analysis described below are met.
  • the first element contained in the conductive film and the first element A contained in the protective film are the same element.
  • the first element contained in the conductive film and the first element A contained in the protective film are Cr or Ta, or the first element contained in the conductive film is Cr and the first element A contained in the protective film is Cr and Ta.
  • the protective film contains Cr as the first element A in terms of the conductivity of the conductive film.
  • the protective film contains Ta as the first element A in terms of adhesion between the conductive film and the protective film.
  • a peak corresponding to the Cr2p 3/2 orbital appears at 576.7 eV or less.
  • the peak corresponding to the Cr2p 3/2 orbital preferably appears at 576.4 eV or less, more preferably appears at 576.0 eV or less, and more preferably appears at 575.5 eV or less.
  • the peak corresponding to the Cr2p 3/2 orbital usually appears at 573.2 eV or more.
  • a peak corresponding to the Cr2p 3/2 orbital appears at 576.7 eV or less, or a peak corresponding to the Ta4f 5/2 orbital appears at 23.8 eV or more. That is, when the conductive film contains Cr as the first element, a peak corresponding to the Cr2p 3/2 orbital appears at 576.7 eV or less, and when the conductive film contains Ta as the first element, a peak corresponding to the Ta4f 5/2 orbital appears at 23.8 eV or more.
  • the preferred range of the peak corresponding to the Cr2p 3/2 orbital is the same as that of embodiment X, and therefore description thereof will be omitted.
  • the peak corresponding to the Ta4f 5/2 orbital when the peak corresponding to the Ta4f 5/2 orbital appears at 23.8 eV or higher, the peak corresponding to the Ta4f 5/2 orbital preferably appears at 29.0 eV or lower, more preferably at 28.9 eV or lower, even more preferably at 26.0 eV or lower, and particularly preferably at 25.0 eV or lower.
  • the method of analysis by XPS and the method of calculating the binding energy value of the peak corresponding to each orbital will be described later.
  • the binding energy value of the peak corresponding to each orbital can be adjusted, for example, by the type of the second element and the ratio of the content of the second element to the total content of Cr (first element A in the case of embodiment Y) and the content of the second element in the protective film. Preferred embodiments are shown below.
  • the thickness of the protective film in the reflective mask blank of the present invention is 2 nm or more.
  • the thickness of the protective film is preferably 2 to 50 nm, more preferably 4 to 50 nm, even more preferably 5 to 50 nm, still more preferably 7 to 50 nm, particularly preferably 10 to 50 nm, and most preferably 10 to 30 nm.
  • the thickness of the overcoat is measured by XRR.
  • the analysis of the protective film by XPS is carried out in the following procedure.
  • an analytical device "PHI 5000 VersaProbe" manufactured by ULVAC-PHI, Inc. is used for the analysis by XPS.
  • the device is calibrated in accordance with JIS K 0145.
  • a measurement sample of about 1 cm square is cut out from a reflective mask blank, and the measurement sample is set in a measurement holder so that the protective film becomes the measurement surface.
  • a portion of the protective film is removed by 3 nm from the outermost surface with an argon ion beam. The sputtering rate during the above-mentioned removal can be measured using a separately prepared sample.
  • the removed portion is irradiated with X-rays (monochromated AlK ⁇ rays) and analyzed at a photoelectron take-off angle (the angle between the surface of the measurement sample and the direction of the detector) of 45.
  • a neutralizing gun is used to suppress charge-up.
  • the analysis is performed by performing a wide scan in the binding energy range of 1000 to 0 eV to confirm the elements present, and then performing a narrow scan according to the elements present (Cr or Ta, and C).
  • the narrow scan is performed, for example, with a pass energy of 58.7 eV, an energy step of 0.1 eV, a time/step of 50 ms, and five accumulations.
  • the wide scan is performed with a pass energy of 58.7 eV, an energy step of 1 eV, a time/step of 50 ms, and two accumulations.
  • the bond energy is calibrated using the peak of the C1s orbital derived from the carbon present on the measurement sample. Specifically, first, the bond energy value indicating the peak of the C1s orbital in the measurement sample is obtained from the narrow scan analysis result, and the value obtained by subtracting the bond energy value from 284.8 eV is taken as the shift value. The above shift value is added to the bond energy value indicating the peak of each orbital obtained from the narrow scan analysis result, and the bond energy value of the peak corresponding to each orbital defined above is calculated.
  • the binding energy is calibrated using Au whose surface has been cleaned in ultra-high vacuum.
  • the shift value is determined by subtracting the binding energy value of the Au4f7 /2 orbital from 83.96 eV, which is obtained from the narrow scan analysis results.
  • the value indicating the peak top is read as the binding energy value.
  • the content of the second element in the protective film when analyzed by XPS is preferably less than 65 atomic % of all atoms in the protective film, more preferably 63 atomic % or less, even more preferably 60 atomic % or less, particularly preferably 45 atomic % or less, more particularly preferably 40 atomic % or less, and most preferably 25 atomic % or less, in terms of superior surface strength.
  • the content of the second element in the protective film is preferably 10 atomic % or more, more preferably 15 atomic % or more, in terms of superior surface strength.
  • the content of Cr (first element A in the case of embodiment Y) in the protective film when analyzed by XPS is preferably 30 atomic % or more, more preferably 40 atomic % or more, and even more preferably 75 atomic % or less, based on all atoms in the protective film.
  • the content of the second element in the protective film is preferably 90 atomic % or less, based on all atoms in the protective film.
  • the total content of Cr (first element A in the case of embodiment Y) and the second element in the protective film when analyzed by XPS is preferably 80 atomic % or more, more preferably 90 atomic % or more, and even more preferably 95 atomic % or more, based on all atoms in the protective film.
  • the total content is preferably 100 atomic % or less, based on all atoms in the protective film.
  • the contents of Cr (first element A in the case of embodiment Y) and the second element are analyzed using relative sensitivity coefficients specific to each element and each orbital from the spectrum obtained by wide scanning when the XPS analysis is performed according to the above procedure.
  • the ratio of the content of the second element to the total content of Cr (first element A in the case of aspect Y) and the content of the second element in the protective film is preferably 5 to 70 atomic %, more preferably 10 to 63 atomic %, even more preferably 10 to 60 atomic %, and particularly preferably 10 to 40 atomic %.
  • the protective film contains two or more types of second elements, it is preferable that the total content of the second elements relative to the total content of Cr (first element A in the case of embodiment Y) and the content of the second elements is in the above range.
  • the above ratio is preferably from 10 to 63 atomic %, and more preferably from 10 to 40 atomic %.
  • the ratio is preferably 10 to 63 atomic %, and more preferably 10 to 40 atomic %.
  • the ratio is preferably 5 to 70 atomic %, more preferably 10 to 63 atomic %, further preferably 10 to 60 atomic %, and particularly preferably 10 to 40 atomic %.
  • the ratio is preferably 10 to 63 atomic %, and more preferably 10 to 40 atomic %.
  • the content of the second element in the protective film when analyzed by XPS is preferably 20 atomic % or more, more preferably 30 atomic % or more, even more preferably 35 atomic % or more, and particularly preferably 40 atomic % or more, based on the total atoms of the protective film, in terms of superior surface strength.
  • the content of the second element in the protective film is preferably 90 atomic % or less, more preferably 80 atomic % or less, even more preferably 70 atomic % or less, and particularly preferably 60 atomic % or less, based on the total atoms of the protective film.
  • the contents of Ta and the second element are analyzed using the relative sensitivity coefficients specific to each element and each orbital from the spectrum obtained by wide scanning when the XPS analysis is performed according to the above procedure.
  • the content of Ta in the protective film when analyzed by XPS is preferably 10 atomic % or more, more preferably 20 atomic % or more, even more preferably 30 atomic % or more, even more preferably 40 atomic % or more, preferably 50 atomic % or more, and particularly preferably 60 atomic % or more, based on the total atoms in the protective film.
  • the content of Ta in the protective film is preferably 80 atomic % or less based on the total atoms in the protective film.
  • the ratio of the content of the second element to the total content of Ta and the content of the second element in the protective film is preferably 20 to 90 atomic %, more preferably 30 to 80 atomic %, and even more preferably 40 to 70 atomic %.
  • the protective film when the protective film contains Ta, and when the protective film contains two or more types of second elements, it is preferable that the total content of the second elements relative to the total content of Ta and the content of the second elements is in the above range.
  • the above ratio is preferably from 20 to 90 atomic %, and more preferably from 30 to 80 atomic %.
  • the ratio of the content of the second element to the total content of Ta (first element A in the case of aspect Y) and the content of the second element in the protective film is preferably 20 to 90 atomic %, more preferably 30 to 80 atomic %, and even more preferably 35 to 70 atomic %.
  • the protective film contains two or more types of second elements, it is preferable that the total content of the second elements relative to the total content of Ta (first element A in the case of embodiment Y) and the content of the second elements is in the above range.
  • the above ratio is preferably from 20 to 90 atomic %, and more preferably from 30 to 480 atomic %.
  • the ratio is preferably 20 to 90 atomic %, and more preferably 30 to 480 atomic %.
  • the ratio is preferably 20 to 90 atomic %, more preferably 30 to 80 atomic %, further preferably 40 to 70 atomic %, and particularly preferably 40 to 60 atomic %.
  • the above ratio is preferably 20 to 90 atomic %, more preferably 25 to 80 atomic %, further preferably 30 to 70 atomic %, and particularly preferably 35 to 60 atomic %.
  • the surface roughness Rq of the protective film on the side opposite to the conductive film is preferably 0.450 nm or less, and more preferably 0.350 nm or less.
  • the lower limit is not particularly limited, and may be 0 nm.
  • the surface roughness Rq refers to the root mean square height, and is synonymous with the root mean square height defined in JIS B 0681-2. Measurements to obtain the surface roughness Rq are performed using a scanning probe microscope. Specifically, an "L-trace" manufactured by Hitachi High-Tech Science Corporation is used, and observations are performed in dynamic force mode.
  • the scanning range is a 2 ⁇ m square range, the contact pressure is 20%, the vibration amplitude is 1.0 V, and the Q curve is 3.00.
  • the volume resistivity of the laminate film consisting of the conductive film and the protective film is preferably 8.0 ⁇ 10 ⁇ 1 ⁇ cm or less, more preferably 2.0 ⁇ 10 ⁇ 2 ⁇ cm or less, even more preferably 1.0 ⁇ 10 ⁇ 2 ⁇ cm or less, particularly preferably 5.0 ⁇ 10 ⁇ 4 ⁇ cm or less, and most preferably 2.0 ⁇ 10 ⁇ 4 ⁇ cm. There is no particular lower limit, but it is often 7.0 ⁇ 10 ⁇ 5 ⁇ cm or more.
  • the volume resistivity is measured using a low resistivity meter, and the detailed measurement conditions follow the measurement method described in the Examples below.
  • the surface hardness of the protective film on the side opposite to the conductive film is preferably 10.0 GPa or more, more preferably 15.0 GPa or more, and is usually 16.0 GPa or less.
  • the surface hardness of the protective film is measured in a state where the conductive film and the protective film are formed in this order on the substrate.
  • the surface hardness is measured using an iMicro type nanoindenter manufactured by KLA Corporation. Detailed measurement conditions follow the measurement method in the following examples.
  • the reflective mask blank of the present invention may have other films.
  • the other films include a hard mask film.
  • the hard mask film is preferably disposed on the side of the absorber film opposite to the side of the reflective film protection film.
  • a material having high resistance to dry etching such as a Cr-based film and a Si-based film.
  • a material having high resistance to dry etching such as a Cr-based film and a Si-based film.
  • a material containing Cr and one or more elements selected from the group consisting of O, N, C, and H can be mentioned.
  • CrO and CrN can be mentioned.
  • As the Si-based film a material containing Si and one or more elements selected from the group consisting of O, N, C, and H can be mentioned.
  • SiO 2 , SiON, SiN, SiO, Si, SiC, SiCO, SiCN, and SiCON can be mentioned.
  • dry etching can be performed even if the minimum line width of the absorber film pattern is reduced. Therefore, it is effective for miniaturizing the absorber film pattern.
  • the reflective mask is obtained by patterning the absorber film of a reflective mask blank.
  • An example of a method for producing a reflective mask will be described with reference to FIG. 2A shows a state in which a resist pattern 40 is formed on a reflective mask blank having, in this order, a protective film 24, a conductive film 22, a substrate 12, a multilayer reflective film 14, a multilayer reflective film protective film 16, and an absorber film 18.
  • the resist pattern 40 can be formed by a known method, for example, applying a resist onto the absorber film 18 of the reflective mask blank, and then exposing and developing the resist to form the resist pattern 40.
  • the resist pattern 40 corresponds to a pattern formed on a wafer using a reflective mask.
  • the absorber film 18 is etched and patterned using the resist pattern 40 in FIG. 2(a) as a mask, and the resist pattern 40 is removed to obtain a laminate having an absorber film pattern 18pt shown in FIG. 2(b).
  • a resist pattern 42 corresponding to the frame of the exposure region is formed on the laminate of Fig. 2(b), and dry etching is performed using the resist pattern 42 of Fig. 2(c) as a mask. The dry etching is performed until it reaches the substrate 12. After the dry etching, the resist pattern 42 is removed to obtain the reflective mask shown in Fig. 2(d).
  • the dry etching used to form the absorber film pattern 18pt may be, for example, dry etching using a Cl-based gas or dry etching using an F-based gas.
  • the resist pattern 40 or 42 may be removed by a known method, such as removal with a cleaning solution, such as sulfuric acid-hydrogen peroxide solution (SPM), sulfuric acid, ammonia water, ammonia-hydrogen peroxide solution (APM), OH radical cleaning water, and ozone water.
  • the reflective mask obtained by patterning the absorber film of the reflective mask blank of the present invention can be suitably used as a reflective mask for exposure to EUV light.
  • the reflective mask of the present invention has excellent surface strength on the back side.
  • Example 1 described below is a Reference Example
  • Examples 2 to 4, 8, 10 and 11 are Working Examples
  • Examples 5 to 7 and 9 are Comparative Examples.
  • a conductive film and a protective film were formed in this order on a substrate to prepare a sample used in each example.
  • the substrate used was a SiO 2 -TiO 2 glass substrate (152 mm square, approximately 6.3 mm thick, 0.4 mm wide chamfered surface).
  • This glass substrate has a thermal expansion coefficient of 0.2 ⁇ 10 -7 /°C, a Young's modulus of 67 GPa, a Poisson's ratio of 0.17, and a specific rigidity of 3.07 ⁇ 10 7 m 2 /s 2.
  • the glass substrate was polished so that the surface roughness (root-mean-square height Sq) of the main surface was 0.15 nm or less, and the flatness was 100 nm or less.
  • a 360 nm thick CrN layer was formed as a conductive film on the back surface of the glass substrate (the surface opposite to the processed surface) by magnetron sputtering.
  • the conditions for forming the conductive film are as follows.
  • Input power 1800W
  • Film formation rate 0.197 nm/s
  • the conductive film was formed by using Ar gas as the sputtering gas.
  • a 20 nm thick CrO layer was formed as a protective film on the surface of the conductive film opposite to the substrate side by magnetron sputtering.
  • the composition of the conductive film was analyzed by XPS, and the results are shown in the table below.
  • the deposition mode column "metal” indicates that the deposition was performed when the target surface was mainly in a metallic state (so-called metal mode).
  • metal mode indicates that the deposition was performed when the target surface was mainly in an oxide state (so-called oxide mode).
  • oxide mode oxide state
  • nitride indicates that the deposition was performed when the target surface was mainly in a nitride state (so-called nitride mode).
  • the conditions for forming the protective film are as follows.
  • the samples used in each example were obtained by the above procedure.
  • ⁇ Resistivity> The resistivity was evaluated from the surface of the protective film side of the sample under the following conditions. At this time, the volume resistivity of the laminated film consisting of the conductive film and the protective film was measured. ⁇ Evaluation equipment: Nitto Seiko Analytech Lorestar GX ⁇ Number of measurement points: 9 points ⁇ Measurement range: 149mm x 149mm The resulting resistivities are shown in the table below.
  • Example 8 a TaN film was formed as a conductive film on one surface of the substrate, and a TaO film was formed on the surface opposite to the substrate side of the conductive film by magnetron sputtering.
  • the deposition conditions for the TaN film and the TaO film are as follows.
  • TaN film Ta target Sputtering gas: mixed gas of Ar, N2 and Kr (Ar: 76 vol%, N2 : 20 vol%, Kr: 4 vol%, gas pressure: 0.23 Pa)
  • Input power 900W Film formation rate: 0.083 nm/min
  • Ta target Sputtering gas Ar and O2 mixed gas (flow rate of each gas is shown in the table below)
  • Gas pressure See table below Power input: 1000W Film formation temperature: 120° C. Film formation rate: 0.15 nm/min
  • Examples 3 to 7 A substrate with a conductive film was obtained in the same manner as in Example 2, except that the film formation conditions were changed as shown in the table below. The measurement results are shown in the table below.
  • Examples 9 to 11 A substrate with a conductive film was obtained in the same manner as in Example 8, except that the film formation conditions were changed as shown in the table below. The measurement results are shown in the table below.
  • the reflective mask blank of the present invention can be obtained.

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JP2011176218A (ja) * 2010-02-25 2011-09-08 Toshiba Corp 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法
JP2012182235A (ja) * 2011-02-28 2012-09-20 Toppan Printing Co Ltd 反射型マスクおよび露光装置
JP2012204708A (ja) * 2011-03-28 2012-10-22 Toppan Printing Co Ltd 反射型マスクブランク及び反射型マスク
JP2021148928A (ja) * 2020-03-18 2021-09-27 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2022045198A (ja) * 2020-09-08 2022-03-18 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

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JP6157874B2 (ja) 2012-03-19 2017-07-05 Hoya株式会社 Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法

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Publication number Priority date Publication date Assignee Title
JP2011176218A (ja) * 2010-02-25 2011-09-08 Toshiba Corp 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法
JP2012182235A (ja) * 2011-02-28 2012-09-20 Toppan Printing Co Ltd 反射型マスクおよび露光装置
JP2012204708A (ja) * 2011-03-28 2012-10-22 Toppan Printing Co Ltd 反射型マスクブランク及び反射型マスク
JP2021148928A (ja) * 2020-03-18 2021-09-27 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2022045198A (ja) * 2020-09-08 2022-03-18 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

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