WO2024085000A1 - Système d'alimentation en fluide, appareil de traitement de substrat et procédé de traitement de substrat - Google Patents

Système d'alimentation en fluide, appareil de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2024085000A1
WO2024085000A1 PCT/JP2023/036501 JP2023036501W WO2024085000A1 WO 2024085000 A1 WO2024085000 A1 WO 2024085000A1 JP 2023036501 W JP2023036501 W JP 2023036501W WO 2024085000 A1 WO2024085000 A1 WO 2024085000A1
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WIPO (PCT)
Prior art keywords
fluid
supply
processing
flow path
processing vessel
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PCT/JP2023/036501
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English (en)
Japanese (ja)
Inventor
貴大 林田
幹雄 中島
翔太 梅▲崎▼
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東京エレクトロン株式会社
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Publication of WO2024085000A1 publication Critical patent/WO2024085000A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present disclosure relates to a fluid supply system, a substrate processing apparatus, and a substrate processing method.
  • Patent Document 1 discloses that a heating mechanism is used to heat the supercritical fluid flowing inside a fluid supply path connected to a processing vessel.
  • This disclosure provides technology that can reduce variation in processing temperature between substrates.
  • a fluid supply system is a fluid supply system that supplies a fluid into a processing vessel in which a substrate is processed, and includes a first fluid supply unit having a first supply valve and supplying the first fluid, a second fluid supply unit having a second supply valve and supplying the second fluid, a fluid supply path connected to the first fluid supply unit, the second fluid supply unit, and the processing vessel and supplying the first fluid and the second fluid into the processing vessel, and a heating mechanism provided in the fluid supply path downstream of a position where the first fluid supply unit and the second fluid supply unit are connected and heating the first fluid and the second fluid.
  • control unit that controls each part of the fluid supply system, and the control unit executes the steps of opening the second supply valve to supply the second fluid heated by the heating mechanism into the processing vessel when the first fluid is not being supplied into the processing vessel, and closing the second supply valve to stop the supply of the second fluid into the processing vessel before the substrate is loaded into the processing vessel, and the step of supplying the second fluid includes setting the set temperature of the heating mechanism to the same temperature as the set temperature of the heating mechanism when the first fluid is supplied into the processing vessel.
  • This disclosure makes it possible to reduce variation in processing temperature between substrates.
  • FIG. 1 is a diagram showing a substrate processing apparatus according to a first embodiment.
  • FIG. 2 is a timing chart showing the substrate processing method according to the first embodiment.
  • FIG. 3 is a diagram (1) showing the substrate processing method according to the first embodiment.
  • FIG. 4 is a diagram (2) showing the substrate processing method according to the first embodiment.
  • FIG. 5 is a view (3) showing the substrate processing method according to the first embodiment.
  • FIG. 6 is a diagram (4) showing the substrate processing method according to the first embodiment.
  • FIG. 7 is a diagram (5) showing the substrate processing method according to the first embodiment.
  • FIG. 8 is a diagram (6) showing the substrate processing method according to the first embodiment.
  • FIG. 9 is a diagram (7) showing the substrate processing method according to the first embodiment.
  • FIG. 1 is a diagram showing a substrate processing apparatus according to a first embodiment.
  • FIG. 2 is a timing chart showing the substrate processing method according to the first embodiment.
  • FIG. 3 is a diagram (1) showing the substrate processing method according to the first
  • FIG. 10 is a diagram showing a substrate processing apparatus according to the second embodiment.
  • FIG. 11 is a timing chart showing the substrate processing method according to the second embodiment.
  • FIG. 12 is a diagram (1) showing a substrate processing method according to the second embodiment.
  • FIG. 13 is a diagram showing a substrate processing method according to the second embodiment.
  • FIG. 14 is a view (3) showing the substrate processing method according to the second embodiment.
  • FIG. 15 is a diagram (4) showing the substrate processing method according to the second embodiment.
  • FIG. 16 is a diagram (5) showing the substrate processing method according to the second embodiment.
  • FIG. 17 is a diagram (6) showing the substrate processing method according to the second embodiment.
  • FIG. 18 is a diagram (7) showing the substrate processing method according to the second embodiment.
  • FIG. 19 is a diagram showing a substrate processing apparatus according to a modified example of the second embodiment.
  • FIG. 20 is a diagram showing the change in processing temperature between substrates.
  • FIG. 21 is a diagram showing the change in processing temperature between substrate
  • FIG. 1 is a diagram showing the substrate processing apparatus 10 according to the first embodiment.
  • the substrate processing apparatus 10 has a processing section 11, a fluid supply system 12, a discharge section 13, and a control section 14.
  • the processing section 11 has a processing vessel 111 and a holding plate 112.
  • the processing vessel 111 is a vessel in which a processing space capable of accommodating a substrate W having a diameter of, for example, 300 mm is formed.
  • the substrate W may be, for example, a semiconductor wafer.
  • the holding plate 112 is provided inside the processing vessel 111.
  • the holding plate 112 holds the substrate W horizontally.
  • the processing section 11 may have a pressure sensor that detects the pressure inside the processing vessel 111 and a temperature sensor that detects the temperature inside the processing vessel 111.
  • the fluid supply system 12 has a treatment fluid supply section 121 and a temperature adjustment section 122.
  • the treatment fluid supply unit 121 has a treatment fluid supply source S11, a first supply flow path L11, an on-off valve V11, an orifice OR11, a second supply flow path L12, an on-off valve V12, an orifice OR12, an inert gas supply source S12, a third supply flow path L13, and an on-off valve V13.
  • the process fluid supply source S11 is a supply source of a process fluid, which may be, for example, carbon dioxide (CO 2 ) in a liquid state.
  • a process fluid which may be, for example, carbon dioxide (CO 2 ) in a liquid state.
  • the first supply flow path L11 is connected to the treatment fluid supply source S11 at its upstream side and to the temperature adjustment unit 122 at its downstream side.
  • An on-off valve V11 and an orifice OR11 are provided in the first supply flow path L11 in this order from upstream.
  • the on-off valve V11 is a valve that switches the flow of the processing fluid on and off. When the on-off valve V11 is open, it allows the processing fluid to flow to the downstream temperature adjustment unit 122, and when it is closed, it does not allow the processing fluid to flow to the downstream temperature adjustment unit 122.
  • the orifice OR11 has the function of reducing the flow rate of the liquid processing fluid and adjusting the pressure.
  • the orifice OR11 passes the pressure-adjusted processing fluid through the downstream temperature adjustment section 122.
  • the second supply flow path L12 is provided in parallel with the first supply flow path L11.
  • the second supply flow path L12 branches off from the first supply flow path L11 upstream of the on-off valve V11 and merges with the first supply flow path L11 downstream of the orifice OR11.
  • the on-off valve V12 and the orifice OR12 are provided in the second supply flow path L12 in this order from upstream.
  • the on-off valve V12 is a valve that switches the flow of the processing fluid on and off. When the on-off valve V12 is open, it allows the processing fluid to flow to the downstream temperature adjustment unit 122, and when it is closed, it does not allow the processing fluid to flow to the downstream temperature adjustment unit 122.
  • the orifice OR12 has the function of reducing the flow rate of the liquid processing fluid and adjusting the pressure.
  • the orifice OR12 passes the pressure-adjusted processing fluid through the downstream temperature adjustment section 122.
  • the inert gas supply source S12 is a supply source of an inert gas, which may be, for example, nitrogen (N 2 ) gas.
  • the third supply flow path L13 is connected to the inert gas supply source S12 at its upstream end, and merges with the first supply flow path L11 downstream of the orifice OR11 at its downstream end.
  • An on-off valve V13 is provided in the third supply flow path L13.
  • a check valve, a filter, etc. may also be provided in the third supply flow path L13.
  • the on-off valve V13 is a valve that switches the flow of inert gas on and off. When open, the on-off valve V13 allows inert gas to flow to the downstream temperature adjustment unit 122, and when closed, the on-off valve V13 does not allow inert gas to flow to the downstream temperature adjustment unit 122.
  • the temperature adjustment unit 122 is connected to the processing fluid supply unit 121 and the processing vessel 111.
  • the temperature adjustment unit 122 passes a temperature-adjusted fluid through the inside of the processing vessel 111.
  • the fluid includes a processing fluid and an inert gas.
  • the temperature adjustment unit 122 has a first branch flow path L14, a second branch flow path L15, a bypass flow path L16, and a first discharge flow path L17.
  • a heating mechanism HE11 In the first branch flow path L14, a heating mechanism HE11, an on-off valve V15, a filter F11, and a temperature sensor T11 are provided in this order from upstream to downstream.
  • a line heater LH11 is provided downstream of the heating mechanism HE11 in the first branch flow path L14.
  • Sensors such as a temperature sensor and a pressure sensor may be provided at various positions in the first branch flow path L14.
  • a heating mechanism HE12 In the second branch flow path L15, a heating mechanism HE12, an on-off valve V16, and a filter F12 are provided in this order from upstream to downstream.
  • a line heater LH12 is provided downstream of the heating mechanism HE12 in the second branch flow path L15.
  • Sensors such as a temperature sensor and a pressure sensor may be provided at various positions in the second branch flow path L15.
  • the first branch flow path L14 branches off from the second branch flow path L15 between the heating mechanism HE12 and the on-off valve V16.
  • the second branch flow path L15 merges with the first branch flow path L14 immediately before the processing vessel 111.
  • the heating mechanism HE11 is provided in series with the heating mechanism HE12.
  • the heating mechanism HE11 heats the fluid supplied from the treatment fluid supply unit 121 to a first temperature and supplies the fluid at the first temperature downstream.
  • the first temperature may be, for example, 100°C or higher and 120°C or lower.
  • the on-off valve V15 is a valve that switches the flow of fluid on and off. When open, the on-off valve V15 allows fluid to flow to the downstream processing vessel 111, and when closed, it does not allow fluid to flow to the downstream processing vessel 111.
  • the filter F11 filters the fluid flowing through the first branch flow path L14 and removes foreign matter contained in the fluid. This makes it possible to prevent particles from being generated on the surface of the substrate W during substrate processing using the fluid.
  • the temperature sensor T11 is provided downstream of the junction of the first branch flow path L14 with the second branch flow path L15.
  • the temperature sensor T11 is provided, for example, immediately before the processing vessel 111.
  • the temperature sensor T11 detects the temperature of the fluid flowing in the first branch flow path L14.
  • the line heater LH11 heats the first branch flow path L14 downstream of the heating mechanism HE11.
  • the line heater LH11 prevents the temperature of the fluid heated to the first temperature by the heating mechanism HE11 from decreasing as it flows through the first branch flow path L14.
  • the heating mechanism HE12 heats the fluid supplied from the treatment fluid supply unit 121 to a second temperature and supplies the fluid at the second temperature downstream.
  • the second temperature is lower than the first temperature.
  • the second temperature may be, for example, 80°C or higher and 90°C or lower.
  • the on-off valve V16 is a valve that switches the flow of fluid on and off. When open, the on-off valve V16 allows fluid to flow to the downstream processing vessel 111, and when closed, the on-off valve V16 does not allow fluid to flow to the downstream processing vessel 111.
  • the filter F12 filters the fluid flowing through the second branch flow path L15 and removes foreign matter contained in the fluid. This makes it possible to prevent particles from being generated on the surface of the substrate W during substrate processing using the fluid.
  • the line heater LH12 heats the second branch flow path L15 downstream of the heating mechanism HE12.
  • the line heater LH12 prevents the temperature of the fluid heated to the second temperature by the heating mechanism HE12 from decreasing as it flows through the second branch flow path L15.
  • the on-off valve V15 and the on-off valve V16 are exclusively opened and closed to change the temperature of the fluid flowing through the processing vessel 111.
  • both the on-off valve V15 and the on-off valve V16 are opened, the fluid heated to the first temperature by the heating mechanism HE11 and the fluid heated to the second temperature by the heating mechanism HE12 are mixed and supplied into the processing vessel 111.
  • a fluid at an intermediate temperature between the first temperature and the second temperature can be supplied into the processing vessel 111.
  • the temperature of the fluid flowing through the processing vessel 111 can be changed in three stages.
  • the bypass flow path L16 connects a position between the on-off valve V15 and the filter F11 in the first branch flow path L14 and a position between the on-off valve V16 and the filter F12 in the second branch flow path L15.
  • An orifice OR13 is provided in the bypass flow path L16.
  • a line heater LH13 is provided in the bypass flow path L16. The bypass flow path L16, the orifice OR13, and the line heater LH13 do not necessarily have to be provided.
  • the orifice OR13 has the function of reducing the flow rate of the fluid passing through the bypass flow path L16 and adjusting the pressure.
  • the line heater LH13 heats the bypass flow path L16.
  • the first discharge flow path L17 discharges the fluid in the first branch flow path L14.
  • the first discharge flow path L17 branches off from the first branch flow path L14 between the heating mechanism HE11 and the on-off valve V15.
  • the first discharge flow path L17 is provided with an on-off valve V14.
  • the first discharge flow path L17 is provided with a line heater LH14.
  • An orifice may be provided in the first discharge flow path L17.
  • the on-off valve V14 is a valve that switches the flow of fluid on and off. When open, the on-off valve V14 allows fluid to flow to the downstream first discharge flow path L17, and when closed, the on-off valve V14 does not allow fluid to flow to the downstream first discharge flow path L17.
  • the line heater LH14 heats the first exhaust flow path L17.
  • the discharge section 13 has a discharge flow path L18.
  • the discharge flow path L18 is connected to the processing vessel 111.
  • a pressure sensor P11, a back pressure valve BV11, and an on-off valve V17 are provided in the discharge flow path L18, in that order from upstream.
  • a line heater LH15 is provided in the discharge flow path L18. Sensors such as a temperature sensor and a pressure sensor may be provided at various positions in the discharge flow path L18.
  • the pressure sensor P11 detects the pressure of the fluid flowing through the discharge flow path L18 immediately after the processing vessel 111. This allows the pressure inside the processing vessel 111 to be detected.
  • the back pressure valve BV11 adjusts the valve opening to allow fluid to flow to the secondary side, thereby maintaining the primary pressure at the set pressure.
  • the set pressure of the back pressure valve BV11 is adjusted by the control unit 14.
  • the on-off valve V17 is a valve that switches the flow of fluid on and off. When open, the on-off valve V17 allows fluid to flow to the downstream discharge flow path L18, and when closed, it does not allow fluid to flow to the downstream discharge flow path L18.
  • the line heater LH15 heats the exhaust flow path L18.
  • the control unit 14 receives measurement signals from various sensors (such as temperature sensor T11 and pressure sensor P11) and transmits control signals to various functional elements.
  • the control signals include, for example, opening and closing signals of the on-off valves V11 to V17, a set pressure signal of the back pressure valve BV11, and temperature signals of the line heaters LH11 to LH15.
  • the control unit 14 is configured to change the flow rate of the fluid flowing through the processing vessel 111 by controlling the opening and closing of the on-off valves V11 and V12 in accordance with the processing state of the substrate W in the processing vessel 111.
  • the control unit 14 is configured to change the temperature of the fluid flowing through the processing vessel 111 by controlling the opening and closing of the on-off valves V15 and V16 in accordance with the processing state of the substrate W in the processing vessel 111.
  • the control unit 14 is, for example, a computer, and includes an arithmetic unit 141 and a memory unit 142.
  • the memory unit 142 stores programs that control various processes executed in the substrate processing apparatus 10.
  • the arithmetic unit 141 controls the operation of the substrate processing apparatus 10 by reading and executing the programs stored in the memory unit 142.
  • the programs may be recorded in a computer-readable storage medium and installed from the storage medium into the storage unit 142 of the control unit 14. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • HD hard disk
  • FD flexible disk
  • CD compact disk
  • MO magnetic optical disk
  • Substrate Processing Method 2 to 9 a substrate processing method executed by the substrate processing apparatus 10 will be described.
  • the substrate processing method described below is automatically executed under the control of the controller 14 based on a processing recipe and a control program stored in the storage unit 142.
  • FIG. 2 is a timing chart showing the substrate processing method according to the first embodiment.
  • the lower diagram shows the opening and closing timing of on-off valves V11, V12, V13, V14, V15, V16, and V17
  • the upper diagram shows the change in the detection value (pressure) of pressure sensor P11 corresponding to the opening and closing timing.
  • FIGS. 3 to 9 are diagrams illustrating the substrate processing method according to the first embodiment.
  • open valves are shown in black, and closed valves are shown in white.
  • the flow paths through which the fluid flows are shown by thick solid lines.
  • an inert gas is supplied to the processing section 11, the fluid supply system 12, and the exhaust section 13.
  • the inert gas may be, for example, N2 gas.
  • the on-off valves V13, V15, V16, and V17 are opened, and the on-off valves V11, V12, and V14 are closed.
  • the inert gas guided from the inert gas supply source S12 to the first branch flow path L14 is heated to a first temperature by the heating mechanism HE11 and supplied into the processing vessel 111.
  • the inert gas guided from the inert gas supply source S12 to the second branch flow path L15 is heated to a second temperature by the heating mechanism HE12 and supplied into the processing vessel 111. Therefore, the first branch flow path L14 and the second branch flow path L15 are purged and heated by the inert gas, so that the processing temperature of the first substrate W after the standby step becomes almost the same as the processing temperature of the second and subsequent substrates W. As a result, the variation in processing temperature between the substrates W is suppressed. In the standby process, the inert gas is discharged from the processing vessel 111 through the discharge flow path L18.
  • the substrate W is loaded into the processing vessel 111.
  • the on-off valve V16 is opened, and the on-off valves V11, V12, V13, V14, V15, and V17 are closed, and then the substrate W is loaded into the processing vessel 111. That is, the substrate W is loaded into the processing vessel 111 without inert gas being supplied into the processing vessel 111.
  • the substrate W may be loaded into the processing vessel 111 while inert gas is being supplied into the processing vessel 111.
  • the substrate W is subjected to a cleaning process, and is placed on the holding plate 112 with the recesses of the pattern on the surface filled with isopropyl alcohol (IPA).
  • IPA isopropyl alcohol
  • the first pressurization step is performed after the standby step.
  • the pressure in the processing vessel 111 is first increased by supplying a processing fluid at a first flow rate and a second temperature, and then the pressure in the processing vessel 111 is increased by supplying a processing fluid at a second flow rate and a second temperature. That is, in the first pressurization step, the pressure is increased in two stages.
  • the second flow rate may be greater than the first flow rate.
  • the on-off valves V11 and V16 are opened, and the on-off valves V12, V13, V14, V15, and V17 are closed.
  • the processing fluid from the processing fluid supply source S11 flows into the temperature adjustment section 122 via the first supply flow path L11, and is supplied into the processing vessel 111 via the second branch flow path L15.
  • the processing fluid at the first flow rate and the second temperature is supplied into the processing vessel 111.
  • the temperature of the substrate W changes to the second temperature.
  • the on-off valve V17 is closed, so the processing fluid does not flow out of the processing vessel 111.
  • the pressure in the processing vessel 111 gradually increases.
  • the processing fluid When pressurizing at the first flow rate, the processing fluid, whose flow rate has been reduced by the orifice OR13, flows from the second branch flow path L15 through the bypass flow path L16 into the first branch flow path L14. This prevents the processing fluid from flowing back from the junction of the first branch flow path L14 and the second branch flow path L15 immediately before the processing vessel 111 toward the upstream of the first branch flow path L14. This makes it possible to suppress contamination downstream of the filter F11 due to IPA residue, etc.
  • the pressure inside the processing vessel 111 is detected by the pressure sensor P11, and the pressurization at the first flow rate continues until the pressure inside the processing vessel 111 reaches the first pressure Y1.
  • the pressurization at the first flow rate ends and transitions to the pressurization at the second flow rate.
  • the on-off valve V12 When the pressure is increased at the second flow rate, as shown in FIG. 6, the on-off valve V12 is opened.
  • the states of the other on-off valves are the same as those shown in FIG. 5.
  • the processing fluid from the processing fluid supply source S11 flows into the temperature adjustment section 122 via the second supply flow path L12 in addition to the first supply flow path L11, and is supplied into the processing vessel 111 via the second branch flow path L15.
  • the flow rate of the processing fluid supplied into the processing vessel 111 increases to the second flow rate.
  • the on-off valve V17 When the pressure is increased at the second flow rate, the on-off valve V17 is closed, so the processing fluid does not flow out of the processing vessel 111. As a result, the pressure inside the processing vessel 111 gradually increases.
  • the pressure of the processing fluid supplied into the processing vessel 111 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing vessel 111 in a gaseous state. Thereafter, as the processing vessel 111 is filled with the processing fluid, the pressure inside the processing vessel 111 increases, and when the pressure inside the processing vessel 111 exceeds the critical pressure, the processing fluid present in the processing vessel 111 becomes supercritical.
  • the processing fluid When pressurizing at the second flow rate, the processing fluid, whose flow rate has been reduced by the orifice OR13, flows from the first branch flow path L14 through the bypass flow path L16 into the second branch flow path L15. This prevents the processing fluid from flowing back from the junction of the first branch flow path L14 and the second branch flow path L15 immediately before the processing vessel 111 toward the upstream of the second branch flow path L15. This makes it possible to suppress contamination downstream of the filter F12 due to IPA residue, etc.
  • the pressure inside the processing vessel 111 is detected by the pressure sensor P11, and the pressurization at the second flow rate continues until the pressure inside the processing vessel 111 reaches the second pressure Y2.
  • the first pressurization process ends and the process moves to the second pressurization process.
  • the second pressurization step is performed after the first pressurization step.
  • the pressure in the processing vessel 111 is increased by supplying the processing fluid at the second flow rate and the first temperature.
  • the on-off valves V11, V12, and V15 are opened, and the on-off valves V13, V14, V16, and V17 are closed.
  • the processing fluid from the processing fluid supply source S11 flows into the temperature adjustment unit 122 via the first supply flow path L11 and the second supply flow path L12, and is supplied into the processing vessel 111 via the first branch flow path L14. Therefore, the processing fluid at the second flow rate and the first temperature is supplied into the processing vessel 111.
  • the temperature of the substrate W is quickly changed to the first temperature.
  • the processing fluid In the second pressurization step, the processing fluid, whose flow rate has been reduced by the orifice OR13, flows from the first branch flow path L14 through the bypass flow path L16 into the second branch flow path L15. This prevents the processing fluid from flowing back from the junction of the first branch flow path L14 and the second branch flow path L15 immediately before the processing vessel 111 toward the upstream of the second branch flow path L15. This makes it possible to suppress contamination downstream of the filter F12 due to IPA residue, etc.
  • the pressure inside the processing vessel 111 is detected by the pressure sensor P11, and the second pressurization process continues until the pressure inside the processing vessel 111 reaches the third pressure Y3.
  • the second pressurization process ends and the process moves to the circulation process.
  • the circulation step is performed after the second pressure increase step.
  • the processing fluid at the second flow rate and the first temperature is supplied from the processing fluid supply source S11 into the processing vessel 111, and the IPA is replaced with the processing fluid in the recess of the pattern on the substrate W in the processing vessel 111.
  • the on-off valves V11, V12, V15, and V17 are opened, and the on-off valves V13, V14, and V16 are closed.
  • the processing fluid of the processing fluid supply source S11 flows into the temperature adjustment unit 122 via the first supply flow path L11 and the second supply flow path L12, and is supplied into the processing vessel 111 via the first branch flow path L14.
  • the processing fluid supplied into the processing vessel 111 is discharged from the processing vessel 111 via the discharge flow path L18.
  • the processing fluid In the circulation process, the processing fluid, whose flow rate has been reduced by the orifice OR13, flows from the first branch flow path L14 through the bypass flow path L16 into the second branch flow path L15. This prevents the processing fluid from flowing back from the junction of the first branch flow path L14 and the second branch flow path L15 immediately before the processing vessel 111 toward the upstream of the second branch flow path L15. This makes it possible to suppress contamination downstream of the filter F12 due to IPA residue, etc.
  • ⁇ Decompression step> The depressurization process is performed after the circulation process.
  • the processing fluid is discharged from the processing vessel 111.
  • the on-off valves V14 and V17 are opened, and the on-off valves V11, V12, V13, V15, and V16 are closed.
  • the pressure in the processing vessel 111 becomes lower than the critical pressure of the processing fluid by the depressurization process, the processing fluid in the supercritical state is vaporized and leaves the recesses of the pattern. This completes the drying process for one substrate W.
  • the process proceeds to a standby step.
  • the processed substrate W is removed from the processing vessel 111 after the process proceeds to the standby step, for example.
  • the supply of inert gas into the processing vessel 111 is started via the first branch flow path L14 and the second branch flow path L15.
  • the substrate W is removed from the processing vessel 111 while the inert gas is being supplied into the processing vessel 111.
  • the supply of inert gas into the processing vessel 111 continues even after the substrate W is removed from the processing vessel 111.
  • the inside of the processing vessel 111 becomes positive pressure, so that when the inside of the processing vessel 111 is opened, a gas flow is formed from the inside to the outside of the processing vessel 111. Therefore, the residue in the processing vessel 111 can be discharged to the outside of the processing vessel 111 and removed. However, when the substrate W is removed from the processing vessel 111, the supply of inert gas into the processing vessel 111 may be stopped.
  • the fluid supply system 12 has a processing fluid supply unit 121 and a temperature adjustment unit 122.
  • the processing fluid supply unit 121 has a flow rate adjustment mechanism (on-off valves V11, V12, orifices OR11, OR12) that adjusts the flow rate of the processing fluid.
  • the temperature adjustment unit 122 has a first branch flow path L14 that passes a processing fluid at a first temperature through the processing vessel 111, and a second branch flow path L15 that passes a processing fluid at a second temperature through the processing vessel 111. This makes it possible to individually control the flow rate and temperature of the processing fluid supplied into the processing vessel 111, and to supply the processing fluid at a controlled flow rate and temperature into the processing vessel 111. As a result, the process margin in the substrate processing method performed using the substrate processing apparatus 10 can be expanded.
  • the temperature adjustment unit 122 (heating mechanisms HE11, HE12) is provided downstream of the junction of the first supply flow path L11, the second supply flow path L12, and the third supply flow path L13.
  • the inert gas of the inert gas supply source S12 is heated to a first temperature by the heating mechanism HE11 and flows through the first branch flow path L14. Therefore, in the first branch flow path L14 downstream of the heating mechanism HE11, the temperature uniformity along the fluid flow direction is improved.
  • inert gas at room temperature flows through the first branch flow path L14, even if the first branch flow path L14 is heated by the line heater LH11, a temperature distribution along the fluid flow direction is likely to occur in the first branch flow path L14.
  • the inert gas from the inert gas supply source S12 is heated to a second temperature by the heating mechanism HE12 and flows through the second branch flow path L15.
  • This improves the temperature uniformity along the fluid flow direction in the second branch flow path L15 downstream of the heating mechanism HE12.
  • inert gas at room temperature flows through the second branch flow path L15, even if the second branch flow path L15 is heated by the line heater LH12, a temperature distribution along the fluid flow direction is likely to occur in the second branch flow path L15.
  • a large flow rate of heated inert gas is supplied into the processing vessel 111 via the first branch flow path L14 and the second branch flow path L15, accelerating the drying of the IPA remaining in the first branch flow path L14, the second branch flow path L15, and the processing vessel 111.
  • the first branch flow path L14 and the second branch flow path L15 are heated by the inert gas, so that the processing temperature of the first substrate W performed after the standby step becomes substantially the same as the processing temperature of the second and subsequent substrates W. As a result, variation in processing temperature between substrates W is suppressed.
  • FIG. 10 is a diagram showing the substrate processing apparatus 20 according to the second embodiment.
  • the substrate processing apparatus 20 has a processing section 21, a fluid supply system 22, a discharge section 23, and a control section 24.
  • the processing section 21 may be the same as the processing section 11.
  • the processing section 21 has a processing vessel 211 and a holding plate 212.
  • the fluid supply system 22 has a treatment fluid supply section 221 and a temperature adjustment section 222.
  • the treatment fluid supply unit 221 may be the same as the treatment fluid supply unit 121.
  • the treatment fluid supply unit 221 has a treatment fluid supply source S21, a first supply flow path L21, an on-off valve V21, an orifice OR21, a second supply flow path L22, an on-off valve V22, an orifice OR22, an inert gas supply source S22, a third supply flow path L23, and an on-off valve V23.
  • the temperature adjustment unit 222 is connected to the treatment fluid supply unit 221 and the treatment vessel 211.
  • the temperature adjustment unit 222 passes a temperature-adjusted fluid through the inside of the treatment vessel 211.
  • the fluid includes a treatment fluid and an inert gas.
  • the temperature adjustment unit 222 has a first branch flow path L24, a second branch flow path L25, a bypass flow path L26, a first discharge flow path L27, and a second discharge flow path L28.
  • a heating mechanism HE21 In the first branch flow path L24, a heating mechanism HE21, an on-off valve V25, a filter F21, and a temperature sensor T21 are provided in this order from upstream.
  • a line heater LH21 is provided downstream of the heating mechanism HE21 in the first branch flow path L24.
  • Sensors such as a temperature sensor and a pressure sensor may be provided at various positions in the first branch flow path L24.
  • an on-off valve V24 In the second branch flow path L25, an on-off valve V24, a heating mechanism HE22, an on-off valve V26, and a filter F22 are provided in this order from upstream.
  • a line heater LH22 is provided downstream of the heating mechanism HE22 in the second branch flow path L25.
  • Sensors such as a temperature sensor and a pressure sensor may be provided at various positions in the second branch flow path L25.
  • the second branch flow path L25 branches off from the first branch flow path L24 between the processing fluid supply unit 221 and the heating mechanism HE21.
  • the second branch flow path L25 merges with the first branch flow path L24 immediately before the processing vessel 211.
  • the heating mechanism HE21 is provided in parallel with the heating mechanism HE22.
  • the heating mechanism HE21 heats the fluid supplied from the treatment fluid supply unit 221 to a first temperature and supplies the fluid at the first temperature downstream.
  • the first temperature may be, for example, 100°C or higher and 120°C or lower.
  • the on-off valve V25 is a valve that switches the flow of fluid on and off. When open, the on-off valve V25 allows fluid to flow to the downstream processing vessel 211, and when closed, it does not allow fluid to flow to the downstream processing vessel 211.
  • the filter F21 filters the fluid flowing through the first branch flow path L24 and removes foreign matter contained in the fluid. This makes it possible to prevent particles from being generated on the surface of the substrate W during the drying process of the substrate W using the fluid.
  • the temperature sensor T21 is provided downstream of the junction of the first branch flow path L24 with the second branch flow path L25.
  • the temperature sensor T21 is provided, for example, immediately before the processing vessel 211.
  • the temperature sensor T21 detects the temperature of the fluid flowing in the first branch flow path L24.
  • the line heater LH21 heats the first branch flow path L24 downstream of the heating mechanism HE21.
  • the line heater LH21 prevents the temperature of the fluid heated to the first temperature by the heating mechanism HE21 from decreasing as it flows through the first branch flow path L24.
  • the on-off valve V24 is a valve that switches the flow of fluid on and off. When open, the on-off valve V24 allows fluid to flow to the downstream heating mechanism HE22, and when closed, it does not allow fluid to flow to the downstream heating mechanism HE22.
  • the heating mechanism HE22 heats the fluid supplied from the treatment fluid supply unit 221 to a second temperature and supplies the fluid at the second temperature downstream.
  • the second temperature is lower than the first temperature.
  • the second temperature may be, for example, 80°C or higher and 90°C or lower.
  • the on-off valve V26 is a valve that switches the flow of fluid on and off. When the on-off valve V26 is open, it allows fluid to flow to the downstream processing vessel 211, and when it is closed, it does not allow fluid to flow to the downstream processing vessel 211.
  • the filter F22 filters the fluid flowing through the second branch flow path L25 and removes foreign matter contained in the fluid. This makes it possible to prevent particles from being generated on the surface of the substrate W during the drying process of the substrate W using the fluid.
  • the line heater LH22 heats the second branch flow path L25 downstream of the heating mechanism HE22.
  • the line heater LH22 prevents the temperature of the fluid heated to the second temperature by the heating mechanism HE22 from decreasing as it flows through the second branch flow path L25.
  • the temperature adjustment unit 222 when the on-off valve V25 is closed and the on-off valve V26 is opened, the fluid heated to the second temperature by the heating mechanism HE22 is supplied into the processing vessel 211 through the second branch flow path L25.
  • the on-off valve V26 is closed and the on-off valve V25 is opened, the fluid heated to the first temperature by the heating mechanism HE21 is supplied into the processing vessel 211 through the first branch flow path L24. In this way, the temperature of the fluid flowing through the processing vessel 211 can be changed by exclusively opening and closing the on-off valve V25 and the on-off valve V26.
  • both the on-off valve V25 and the on-off valve V26 are opened, the fluid heated to the first temperature by the heating mechanism HE21 and the fluid heated to the second temperature by the heating mechanism HE22 are mixed and supplied into the processing vessel 211.
  • a fluid at an intermediate temperature between the first temperature and the second temperature can be supplied into the processing vessel 211.
  • the temperature of the fluid flowing through the processing vessel 211 can be changed in three stages.
  • the bypass flow path L26 connects a position between the on-off valve V25 and the filter F21 in the first branch flow path L24 and a position between the on-off valve V26 and the filter F22 in the second branch flow path L25.
  • An orifice OR23 is provided in the bypass flow path L26.
  • a line heater LH23 is provided in the bypass flow path L26. The bypass flow path L26, the orifice OR23, and the line heater LH23 do not necessarily have to be provided.
  • the orifice OR23 has the function of reducing the flow rate of the fluid passing through the bypass flow path L26 and adjusting the pressure.
  • the line heater LH23 heats the bypass flow path L26.
  • the first discharge flow path L27 discharges the fluid in the first branch flow path L24.
  • the first discharge flow path L27 branches off from the first branch flow path L24 between the heating mechanism HE21 and the on-off valve V25.
  • the first discharge flow path L27 is provided with an on-off valve V27.
  • the first discharge flow path L27 is provided with a line heater LH24.
  • An orifice may be provided in the first discharge flow path L27.
  • the on-off valve V27 is a valve that switches the flow of fluid on and off. When open, the on-off valve V27 allows fluid to flow to the downstream first discharge flow path L27, and when closed, it does not allow fluid to flow to the downstream first discharge flow path L27.
  • the line heater LH24 heats the first exhaust flow path L27.
  • the second discharge flow path L28 discharges the fluid in the second branch flow path L25.
  • the second discharge flow path L28 branches off from the second branch flow path L25 between the heating mechanism HE22 and the on-off valve V26.
  • the second discharge flow path L28 is provided with an on-off valve V28.
  • the second discharge flow path L28 is provided with a line heater LH25.
  • An orifice may be provided in the second discharge flow path L28.
  • the on-off valve V28 is a valve that switches the flow of fluid on and off. When open, the on-off valve V28 allows fluid to flow to the downstream second discharge flow path L28, and when closed, the on-off valve V28 does not allow fluid to flow to the downstream second discharge flow path L28.
  • the line heater LH25 heats the second exhaust flow path L28.
  • the discharge section 23 has a discharge flow path L29.
  • the discharge flow path L29 is connected to the processing vessel 211.
  • a pressure sensor P21, a back pressure valve BV21, and an on-off valve V29 are provided in the discharge flow path L29, in that order from upstream.
  • a line heater LH26 is provided in the discharge flow path L29. Sensors such as a temperature sensor and a pressure sensor may be provided at various positions in the discharge flow path L29.
  • the pressure sensor P21 detects the pressure of the fluid flowing through the discharge flow path L29 immediately after the processing vessel 211. This allows the pressure inside the processing vessel 211 to be detected.
  • the back pressure valve BV21 adjusts the valve opening to allow fluid to flow to the secondary side, thereby maintaining the primary pressure at the set pressure.
  • the set pressure of the back pressure valve BV21 is adjusted by the control unit 24.
  • the on-off valve V29 is a valve that switches the flow of fluid on and off. When open, the on-off valve V29 allows fluid to flow to the downstream discharge flow path L29, and when closed, the on-off valve V29 does not allow fluid to flow to the downstream discharge flow path L29.
  • the line heater LH26 heats the exhaust flow path L29.
  • the control unit 24 receives measurement signals from various sensors (such as temperature sensor T21 and pressure sensor P21) and transmits control signals to various functional elements.
  • the control signals include, for example, opening and closing signals of the on-off valves V21 to V29, a set pressure signal of the back pressure valve BV21, and a temperature signal of the line heater LH21 to LH26.
  • the control unit 24 is configured to change the flow rate of the fluid flowing through the processing vessel 211 by controlling the opening and closing of the on-off valves V21 and V22 in accordance with the processing state of the substrate W in the processing vessel 211.
  • the control unit 24 is configured to change the temperature of the fluid flowing through the processing vessel 211 by controlling the opening and closing of the on-off valves V25 and V26 in accordance with the processing state of the substrate W in the processing vessel 211.
  • the control unit 24 is, for example, a computer, and includes an arithmetic unit 241 and a memory unit 242.
  • the memory unit 242 stores programs that control various processes executed in the substrate processing apparatus 20.
  • the arithmetic unit 241 controls the operation of the substrate processing apparatus 20 by reading and executing the programs stored in the memory unit 242.
  • the programs may be recorded in a computer-readable storage medium and installed from the storage medium into the storage unit 242 of the control unit 24. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • HD hard disk
  • FD flexible disk
  • CD compact disk
  • MO magnetic optical disk
  • Substrate Processing Method 11 to 18 a substrate processing method executed by the substrate processing apparatus 20 will be described.
  • the substrate processing method described below is automatically executed under the control of the controller 24 based on the processing recipe and the control program stored in the storage unit 242.
  • FIG. 11 is a timing chart showing the substrate processing method according to the second embodiment.
  • the lower diagram shows the opening and closing timing of on-off valves V21, V22, V23, V24, V25, V26, V27, V28, and V29
  • the upper diagram shows the change in the detection value (pressure) of pressure sensor P21 corresponding to the opening and closing timing.
  • FIGS. 12 to 18 are diagrams illustrating a substrate processing method according to the second embodiment.
  • an open valve is shown filled in black, and a closed valve is shown filled in white.
  • a flow path through which a fluid flows is shown by a thick solid line.
  • an inert gas is supplied to the processing section 21, the fluid supply system 22, and the exhaust section 23.
  • the inert gas may be, for example, N2 gas.
  • the on-off valves V23, V24, V25, V26, and V29 are opened, and the on-off valves V21, V22, V27, and V28 are closed.
  • the inert gas guided from the inert gas supply source S22 to the first branch flow path L24 is heated to a first temperature by the heating mechanism HE21 and supplied into the processing vessel 211.
  • the inert gas guided from the inert gas supply source S22 to the second branch flow path L25 is heated to a second temperature by the heating mechanism HE22 and supplied into the processing vessel 211. Therefore, the first branch flow path L24 and the second branch flow path L25 are purged and heated by the inert gas, so that the processing temperature of the first substrate W after the standby step becomes substantially the same as the processing temperature of the second and subsequent substrates W. This results in suppressing variation in processing temperature among the substrates W.
  • the inert gas is exhausted from the processing vessel 211 through the exhaust passage L29.
  • the substrate W is loaded into the processing vessel 211.
  • the on-off valves V24 and V26 are opened, and the on-off valves V21, V22, V23, V25, V27, V28, and V29 are closed, and then the substrate W is loaded into the processing vessel 211. That is, the substrate W is loaded into the processing vessel 211 without inert gas being supplied into the processing vessel 211.
  • the substrate W may be loaded into the processing vessel 211 while inert gas is being supplied into the processing vessel 211.
  • the substrate W is subjected to a cleaning process, and is placed on the holding plate 212 with the recesses of the pattern on the surface filled with IPA.
  • the first pressurization step is performed after the standby step.
  • the pressure in the processing vessel 211 is first increased by supplying a processing fluid at a first flow rate and a second temperature, and then the pressure in the processing vessel 211 is increased by supplying a processing fluid at a second flow rate and a second temperature. That is, in the first pressurization step, the pressure is increased in two stages.
  • the second flow rate may be greater than the first flow rate.
  • the on-off valves V21, V24, and V26 are opened, and the on-off valves V22, V23, V25, V27, V28, and V29 are closed.
  • the processing fluid from the processing fluid supply source S21 flows into the temperature adjustment section 222 via the first supply flow path L21 and is supplied into the processing vessel 211 via the second branch flow path L25. Therefore, the processing fluid at the first flow rate and the second temperature is supplied into the processing vessel 211.
  • the temperature of the substrate W changes to the second temperature.
  • the on-off valve V29 is closed, so the processing fluid does not flow out of the processing vessel 211. Therefore, the pressure in the processing vessel 211 gradually increases.
  • the processing fluid When pressurizing at the first flow rate, the processing fluid, whose flow rate has been reduced by the orifice OR23, flows from the second branch flow path L25 through the bypass flow path L26 into the first branch flow path L24. This prevents the processing fluid from flowing back from the junction of the first branch flow path L24 and the second branch flow path L25 immediately before the processing vessel 211 toward the upstream of the first branch flow path L24. This makes it possible to suppress contamination downstream of the filter F21 due to IPA residue, etc.
  • the pressure inside the processing vessel 211 is detected by the pressure sensor P21, and the pressurization at the first flow rate continues until the pressure inside the processing vessel 211 reaches the first pressure Y1.
  • the pressurization at the first flow rate ends and transitions to the pressurization at the second flow rate.
  • the on-off valve V22 When the pressure is increased at the second flow rate, as shown in FIG. 15, the on-off valve V22 is opened.
  • the states of the other on-off valves are the same as those shown in FIG. 14.
  • the processing fluid from the processing fluid supply source S21 flows into the temperature adjustment section 222 via the second supply flow path L22 in addition to the first supply flow path L21, and is supplied into the processing vessel 211 via the second branch flow path L25.
  • the flow rate of the processing fluid supplied into the processing vessel 211 increases to the second flow rate.
  • the on-off valve V29 When the pressure is increased at the second flow rate, the on-off valve V29 is closed, so the processing fluid does not flow out of the processing vessel 211. As a result, the pressure inside the processing vessel 211 gradually increases.
  • the pressure of the processing fluid supplied into the processing vessel 211 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing vessel 211 in a gaseous state. Thereafter, as the processing vessel 211 is filled with the processing fluid, the pressure inside the processing vessel 211 increases, and when the pressure inside the processing vessel 211 exceeds the critical pressure, the processing fluid present in the processing vessel 211 becomes supercritical.
  • the processing fluid When pressurizing at the second flow rate, the processing fluid, whose flow rate has been reduced by the orifice OR23, flows from the second branch flow path L25 through the bypass flow path L26 into the first branch flow path L24. This prevents the processing fluid from flowing back from the junction of the first branch flow path L24 and the second branch flow path L25 immediately before the processing vessel 211 toward the upstream of the first branch flow path L24. This makes it possible to suppress contamination downstream of the filter F21 due to IPA residue, etc.
  • the pressure inside the processing vessel 211 is detected by the pressure sensor P21, and the pressurization at the second flow rate continues until the pressure inside the processing vessel 211 reaches the second pressure Y2.
  • the first pressurization process ends and the process moves to the second pressurization process.
  • the second pressurization step is performed after the first pressurization step.
  • the pressure in the processing vessel 211 is increased by supplying the processing fluid at the second flow rate and the first temperature.
  • the on-off valves V21, V22, V25, and V28 are opened, and the on-off valves V23, V24, V26, V27, and V29 are closed.
  • the processing fluid from the processing fluid supply source S21 flows into the temperature adjustment unit 222 via the first supply flow path L21 and the second supply flow path L22, and is supplied into the processing vessel 211 via the first branch flow path L24. Therefore, the processing fluid at the second flow rate and the first temperature is supplied into the processing vessel 211.
  • the temperature of the substrate W is quickly changed to the first temperature.
  • the processing fluid In the second pressurization step, the processing fluid, whose flow rate has been reduced by the orifice OR23, flows from the first branch flow path L24 through the bypass flow path L26 into the second branch flow path L25. This prevents the processing fluid from flowing back from the junction of the first branch flow path L24 and the second branch flow path L25 immediately before the processing vessel 211 toward the upstream of the second branch flow path L25. This makes it possible to suppress contamination downstream of the filter F22 due to IPA residue, etc.
  • the processing fluid in the second branch flow path L25 is discharged and the pressure in the second branch flow path L25 is reduced. Since the heat storage amount of the heating mechanism HE22 set to the second temperature lower than the first temperature is small, when the pressure in the second branch flow path L25 is reduced, the temperature of the heating mechanism HE22 drops significantly due to the pressure drop, and it takes time for the temperature of the heating mechanism HE22 to return to the second temperature. Therefore, while the processing fluid is flowing through the first branch flow path L24 in the second pressure increase step, the on-off valves V24 and V26 are closed and the on-off valve V28 is opened, thereby reducing the pressure in the second branch flow path L25 and returning the temperature of the heating mechanism HE22 to the second temperature. In this way, since the second exhaust flow path L28 and the on-off valve V28 are provided, the heating mechanism HE2 can be prepared for the next substrate W in parallel with the processing of the substrate W in the processing vessel 211.
  • the pressure inside the processing vessel 211 is detected by the pressure sensor P21, and the second pressurization process continues until the pressure inside the processing vessel 211 reaches the third pressure Y3.
  • the second pressurization process ends and the process moves to the circulation process.
  • the circulation process is performed after the second pressure increase process.
  • the processing fluid at the second flow rate and the first temperature is supplied from the processing fluid supply source S21 into the processing vessel 211, and the IPA is replaced with the processing fluid in the recess of the pattern on the substrate W in the processing vessel 211.
  • the on-off valves V21, V22, V25, V28, and V29 are opened, and the on-off valves V23, V24, V26, and V27 are closed.
  • the processing fluid of the processing fluid supply source S21 flows into the temperature adjustment unit 222 via the first supply flow path L21 and the second supply flow path L22, and is supplied into the processing vessel 211 via the first branch flow path L24.
  • the processing fluid supplied into the processing vessel 211 is discharged from the processing vessel 211 via the discharge flow path L29.
  • the processing fluid In the circulation process, the processing fluid, whose flow rate has been reduced by the orifice OR23, flows from the first branch flow path L24 through the bypass flow path L26 into the second branch flow path L25. This prevents the processing fluid from flowing back from the junction of the first branch flow path L24 and the second branch flow path L25 immediately before the processing vessel 211 toward the upstream of the second branch flow path L25. This makes it possible to suppress contamination downstream of the filter F22 due to IPA residue, etc.
  • the pressure reduction in the second branch flow path L25 continues even in the circulation process.
  • ⁇ Decompression step> The depressurization process is performed after the circulation process.
  • the processing fluid is discharged from the processing vessel 211.
  • the on-off valves V27, V28, and V29 are opened, and the on-off valves V21, V22, V23, V24, V25, and V26 are closed.
  • the pressure in the processing vessel 211 becomes lower than the critical pressure of the processing fluid by the depressurization process, the processing fluid in the supercritical state is vaporized and leaves the recesses of the pattern. This completes the drying process for one substrate W.
  • the processing fluid in the first branch flow path L24 is discharged via the first discharge flow path L27, and the processing fluid in the second branch flow path L25 is discharged via the second discharge flow path L28. That is, the processing fluid in the first branch flow path L24 and the processing fluid in the second branch flow path L25 are discharged from different discharge flow paths. This prevents mixing of the processing fluid at the first temperature and the processing fluid at the second temperature.
  • the process proceeds to a standby step.
  • the processed substrate W is removed from the processing vessel 211 after the process proceeds to the standby step, for example.
  • the supply of inert gas into the processing vessel 211 is started via the first branch flow path L24 and the second branch flow path L25.
  • the substrate W is removed from the processing vessel 211 while the inert gas is being supplied into the processing vessel 211.
  • the supply of inert gas into the processing vessel 211 continues even after the substrate W is removed from the processing vessel 211.
  • the inside of the processing vessel 211 becomes positive pressure, so that when the inside of the processing vessel 211 is opened, a gas flow is formed from the inside to the outside of the processing vessel 211. Therefore, the residue in the processing vessel 211 can be discharged to the outside of the processing vessel 211 and removed.
  • the supply of inert gas into the processing vessel 211 may be stopped.
  • the fluid supply system 22 has a processing fluid supply unit 221 and a temperature adjustment unit 222.
  • the processing fluid supply unit 221 has a flow rate adjustment mechanism (on-off valves V21, V22, orifices OR21, OR22) that adjusts the flow rate of the processing fluid.
  • the temperature adjustment unit 222 has a first branch flow path L24 that passes a processing fluid at a first temperature into the processing vessel 211, and a second branch flow path L25 that passes a processing fluid at a second temperature into the processing vessel 211. This makes it possible to individually control the flow rate and temperature of the processing fluid supplied into the processing vessel 211, and to supply the processing fluid at a controlled flow rate and temperature into the processing vessel 211. As a result, the process margin in the substrate processing method performed using the substrate processing apparatus 10 can be expanded.
  • the temperature adjustment unit 222 (heating mechanisms HE21, HE22) is provided downstream of the junction of the first supply flow path L21, the second supply flow path L22, and the third supply flow path L23.
  • the inert gas of the inert gas supply source S22 is heated to a first temperature by the heating mechanism HE21 and flows through the first branch flow path L24. Therefore, in the first branch flow path L24 downstream of the heating mechanism HE21, the temperature uniformity along the fluid flow direction is improved.
  • inert gas at room temperature flows through the first branch flow path L24, even if the first branch flow path L24 is heated by the line heater LH21, a temperature distribution along the fluid flow direction is likely to occur in the first branch flow path L24.
  • the inert gas from the inert gas supply source S22 is heated to a second temperature by the heating mechanism HE22 and flows through the second branch flow path L25.
  • This improves the temperature uniformity along the fluid flow direction in the second branch flow path L25 downstream of the heating mechanism HE22.
  • inert gas at room temperature flows through the second branch flow path L25, even if the second branch flow path L25 is heated by the line heater LH22, a temperature distribution along the fluid flow direction is likely to occur in the second branch flow path L25.
  • a large flow rate of heated inert gas is supplied into the processing vessel 211 via the first branch flow path L24 and the second branch flow path L25, accelerating the drying of the IPA remaining in the first branch flow path L24, the second branch flow path L25, and the processing vessel 211.
  • a heated inert gas flows through the first branch flow path L24 and the second branch flow path L25.
  • the first branch flow path L24 and the second branch flow path L25 are heated by the inert gas, so that the processing temperature of the first substrate W performed after the standby step becomes substantially the same as the processing temperature of the second and subsequent substrates W. As a result, variation in processing temperature between substrates W is suppressed.
  • FIG. 19 is a diagram showing a substrate processing apparatus 20A according to a modified example of the second embodiment.
  • Substrate processing apparatus 20A differs from substrate processing apparatus 20 in that heating mechanism HE21 and heating mechanism HE22 are each connected to a processing fluid supply unit, and in that there is no bypass flow path L26.
  • the rest of the configuration of substrate processing apparatus 20A may be the same as that of substrate processing apparatus 20. The following will focus on the differences from substrate processing apparatus 20.
  • the substrate processing apparatus 20A has a processing section 21, a fluid supply system 22A, a discharge section 23, and a control section 24.
  • the fluid supply system 22A has a treatment fluid supply unit 221A, a treatment fluid supply unit 221B, and a temperature adjustment unit 222A.
  • the treatment fluid supply unit 221A has a treatment fluid supply source S21A, a first supply flow path L21A, an on-off valve V21A, an orifice OR21A, an inert gas supply source S22A, a third supply flow path L23A, and an on-off valve V23A.
  • the treatment fluid supply source S21A, the first supply flow path L21A, the on-off valve V21A, the orifice OR21A, the inert gas supply source S22A, the third supply flow path L23A, and the on-off valve V23A may be the same as the treatment fluid supply source S21, the first supply flow path L21, the on-off valve V21, the orifice OR21, the inert gas supply source S22, the third supply flow path L23, and the on-off valve V23, respectively.
  • the treatment fluid supply section 221B has a treatment fluid supply source S21B, a first supply flow path L21B, an on-off valve V21B, an orifice OR21B, a second supply flow path L22B, an on-off valve V22B, an orifice OR22B, an inert gas supply source S22B, a third supply flow path L23B, and an on-off valve V23B.
  • the processing fluid supply source S21B, the first supply flow path L21B, the on-off valve V21B, the orifice OR21B, the second supply flow path L22B, the on-off valve V22B, the orifice OR22B, the inert gas supply source S22B, the third supply flow path L23B, and the on-off valve V23B may be the same as the processing fluid supply source S21, the first supply flow path L21, the on-off valve V21, the orifice OR21, the second supply flow path L22, the on-off valve V22, the orifice OR22, the inert gas supply source S22, the third supply flow path L23, and the on-off valve V23, respectively.
  • the temperature adjustment unit 222A differs from the temperature adjustment unit 222 in that the heating mechanism HE21 is connected to the treatment fluid supply unit 221A, and the heating mechanism HE22 is connected to the treatment fluid supply unit 221B.
  • the process fluid supply units 221A and 221B that supply fluid to the temperature adjustment unit 222A are switched by controlling the opening and closing of the on-off valves V21A, V23A, V21B, V22B, and V23B.
  • the on-off valve V21A is opened, a process fluid is supplied from the process fluid supply unit 221A to the first branch flow path L24.
  • an inert gas is supplied from the process fluid supply unit 221A to the first branch flow path L24.
  • a process fluid is supplied from the process fluid supply unit 221B to the second branch flow path L25.
  • an inert gas is supplied from the process fluid supply unit 221B to the second branch flow path L25.
  • the processing fluid supply units 221A and 221B that supply fluid to the temperature adjustment unit 222A are switched depending on the process being performed, for example.
  • Example 1 A plurality of substrates were successively processed by the substrate processing method according to the first embodiment (Example 1). That is, in Example 1, in a waiting step before processing each substrate, preheating of the first branch flow path L14 and the second branch flow path L15 was performed with an inert gas. In Example 1, the processing pressure and processing temperature were measured during the period in which each substrate was processed. The processing pressure was the detection value of the pressure sensor P11, and the processing temperature was the detection value of the temperature sensor T11.
  • Example 1 For comparison, in the waiting step in the substrate processing method according to the first embodiment, no inert gas was supplied during the waiting step, and other conditions were the same as in Example 1, and multiple substrates were processed consecutively (Comparative Example 1). That is, in Comparative Example 1, preheating of the first branch flow path L14 and the second branch flow path L15 with inert gas was not performed during the waiting step before processing each substrate. In Comparative Example 1, the processing pressure and processing temperature were measured during the period when each substrate was being processed. The processing pressure was the detection value of the pressure sensor P11, and the processing temperature was the detection value of the temperature sensor T11.
  • FIGS. 20 and 21 are diagrams showing the change in processing temperature between substrates.
  • FIG. 20 shows the measurement results of Comparative Example 1
  • FIG. 21 shows the measurement results of Example 1.
  • the horizontal axis indicates time
  • the vertical axis on the left indicates processing temperature
  • the vertical axis on the right indicates processing pressure.
  • the processing temperature during processing of the first substrate is shown by a solid line
  • the processing temperature during processing of the second and subsequent substrates is shown by a dashed line
  • the processing pressure is shown by a dashed line.
  • the processing temperature during processing of the second and subsequent substrates is higher than the processing temperature during processing of the first substrate, and it can be seen that there is variation in the processing temperature between substrates. This is thought to be because, when preheating with an inert gas is not performed, heat is transferred downstream from the line heaters LH11, LH12 through the processing fluid in the first branch flow path L14 and the second branch flow path L15 with each processing run.
  • the processing temperature during processing of the first substrate is approximately the same as the processing temperature during processing of the second and subsequent substrates. This is believed to be because, when preheating with an inert gas is performed, the temperatures of the first branch flow path L14 and the second branch flow path L15 become approximately the same before processing the first substrate and before processing the second and subsequent substrates.
  • the on-off valves V11 and V21 are an example of a first supply valve
  • the on-off valves V13 and V23 are an example of a second supply valve
  • the on-off valves V17 and V29 are an example of a discharge valve.
  • the heating mechanisms HE11, HE12, HE21, and HE22 are an example of a heating mechanism.
  • the first branch flow paths L14 and L24 and the second branch flow paths L15 and L25 are an example of a fluid supply path.
  • the processing fluid supply sources S11 and S21, the first supply flow paths L11 and L21, the on-off valves V11 and V21, the orifices OR11 and OR21, the second supply flow paths L12 and L22, the on-off valves V12 and V22, and the orifices OR12 and OR22 are an example of a first fluid supply unit.
  • the inert gas supply sources S12 and S22, the third supply flow paths L13 and L23, and the on-off valves V13 and V23 are an example of a second fluid supply unit.
  • the process fluid is an example of a first fluid
  • the inert gas is an example of a second fluid.
  • REFERENCE SIGNS LIST 10 20 Substrate processing apparatus 11, 21 Processing section 111, 211 Processing vessel 12, 22 Fluid supply system 121, 221 Processing fluid supply section 122, 222 Temperature adjustment section 14, 24 Control section HE11, HE21 Heating mechanism HE12, HE22 Heating mechanism L11, L21 First supply flow path L12, L22 Second supply flow path L14, L24 First branch flow path L15, L25 Second branch flow path V11, V21 Opening/closing valve V12, V22 Opening/closing valve

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Un système d'alimentation en fluide selon un mode de réalisation de la présente divulgation fournit un fluide dans une chambre de traitement dans laquelle un substrat est traité, et ce système d'alimentation en fluide comprend : une première unité d'alimentation en fluide qui possède une première soupape d'alimentation et fournit un premier fluide ; une seconde unité d'alimentation en fluide qui possède une seconde soupape d'alimentation et fournit un second fluide ; un trajet d'alimentation en fluide qui est relié à la première unité d'alimentation en fluide, à la seconde unité d'alimentation en fluide et à la chambre de traitement, et fournit le premier fluide et le second fluide dans la chambre de traitement ; un mécanisme de chauffage qui chauffe le premier fluide et le second fluide, tout en étant disposé sur le trajet d'alimentation en fluide à une position qui est en aval des positions auxquelles la première unité d'alimentation en fluide et la seconde unité d'alimentation en fluide sont reliées au trajet d'alimentation en fluide ; et une unité de commande qui commande les unités de ce système d'alimentation en fluide. L'unité de commande exécute : un processus dans lequel la seconde soupape d'alimentation est ouverte de façon à fournir le second fluide, qui a été chauffé par le mécanisme de chauffage, dans la chambre de traitement lorsque le premier fluide n'est pas fourni dans la chambre de traitement ; et un processus dans lequel la seconde soupape d'alimentation est fermée de façon à arrêter l'alimentation du second fluide dans la chambre de traitement avant que le substrat ne soit transporté dans la chambre de traitement. Le second processus d'alimentation en fluide comprend une étape consistant à régler la température de consigne du mécanisme de chauffage à la même température que la température de consigne du mécanisme de chauffage au moment où le fluide est fourni dans la chambre de traitement.
PCT/JP2023/036501 2022-10-20 2023-10-06 Système d'alimentation en fluide, appareil de traitement de substrat et procédé de traitement de substrat WO2024085000A1 (fr)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009038328A (ja) * 2007-08-06 2009-02-19 Ryusyo Industrial Co Ltd 超臨界流体洗浄装置
JP2011187570A (ja) * 2010-03-05 2011-09-22 Tokyo Electron Ltd 超臨界処理装置及び超臨界処理方法
WO2012165377A1 (fr) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 Procédé de traitement d'un substrat, dispositif de traitement d'un substrat et support d'enregistrement
JP2017059642A (ja) * 2015-09-15 2017-03-23 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP2020025013A (ja) * 2018-08-07 2020-02-13 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置
JP2021503714A (ja) * 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
WO2022196384A1 (fr) * 2021-03-18 2022-09-22 東京エレクトロン株式会社 Procédé de traitement de substrat et dispositif de traitement de substrat

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009038328A (ja) * 2007-08-06 2009-02-19 Ryusyo Industrial Co Ltd 超臨界流体洗浄装置
JP2011187570A (ja) * 2010-03-05 2011-09-22 Tokyo Electron Ltd 超臨界処理装置及び超臨界処理方法
WO2012165377A1 (fr) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 Procédé de traitement d'un substrat, dispositif de traitement d'un substrat et support d'enregistrement
JP2017059642A (ja) * 2015-09-15 2017-03-23 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP2021503714A (ja) * 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
JP2020025013A (ja) * 2018-08-07 2020-02-13 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置
WO2022196384A1 (fr) * 2021-03-18 2022-09-22 東京エレクトロン株式会社 Procédé de traitement de substrat et dispositif de traitement de substrat

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