WO2024083108A1 - Dispositif électronique et procédé de fabrication associé, et circuit - Google Patents

Dispositif électronique et procédé de fabrication associé, et circuit Download PDF

Info

Publication number
WO2024083108A1
WO2024083108A1 PCT/CN2023/124905 CN2023124905W WO2024083108A1 WO 2024083108 A1 WO2024083108 A1 WO 2024083108A1 CN 2023124905 W CN2023124905 W CN 2023124905W WO 2024083108 A1 WO2024083108 A1 WO 2024083108A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic component
nitride semiconductor
port
semiconductor layer
electrode
Prior art date
Application number
PCT/CN2023/124905
Other languages
English (en)
Chinese (zh)
Inventor
林逸铭
盛健健
Original Assignee
英诺赛科(苏州)半导体有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 英诺赛科(苏州)半导体有限公司 filed Critical 英诺赛科(苏州)半导体有限公司
Publication of WO2024083108A1 publication Critical patent/WO2024083108A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/303—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters using a switching device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence

Definitions

  • the present application relates to an electronic device, a circuit and a method for manufacturing the same, and more particularly to an electronic device, a circuit and a method for manufacturing the same including a nitride semiconductor layer.
  • Components including direct-gap semiconductors such as semiconductor components including III-V materials or III-V compounds (category: III-V compounds), can operate or work under various conditions or environments (eg, at different voltages and frequencies).
  • Semiconductor components may include heterojunction bipolar transistor (HBT), heterojunction field effect transistor (HFET), high-electron-mobility transistor (HEMT), modulation-doped FET (MODFET), etc.
  • HBT heterojunction bipolar transistor
  • HFET heterojunction field effect transistor
  • HEMT high-electron-mobility transistor
  • MODFET modulation-doped FET
  • an electronic device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first conductive structure, a second conductive structure, a first port, and a second port.
  • the first nitride semiconductor layer is on the substrate.
  • the second nitride semiconductor layer is on the first nitride semiconductor layer, and the band gap of the second nitride semiconductor layer is greater than the band gap of the first nitride semiconductor layer.
  • the first conductive structure is on the second nitride semiconductor layer.
  • the first port is on the second nitride semiconductor layer.
  • the second conductive structure is located between the first port and the first conductive structure.
  • the second port is on the second nitride semiconductor layer, and the first port is located between the second port and the second conductive structure.
  • a method for manufacturing an electronic device includes providing an amplifier; providing a first electronic component; providing a second electronic component, a first electrode of which is electrically connected to a first port and the first electrode of the first electronic component; providing a third electronic component, wherein the second electronic component is electrically connected to the third electronic component via the amplifier; and providing a fourth electronic component, a first electrode of which is electrically connected to the second electrode of the first electronic component.
  • a current flowing through the third electronic component has a first ratio to a current flowing through the fourth electronic component.
  • the first electronic component, the second electronic component, and the fourth electronic component include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer is on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer is greater than the band gap of the first nitride semiconductor layer.
  • an electronic device includes a first electronic component, a second electronic component, a third electronic component, and a fourth electronic component.
  • a first electrode of the second electronic component is electrically connected to a first port and the first electrode of the first electronic component.
  • the second electronic component is electrically connected to the third electronic component via an amplifier.
  • the first electrode of the fourth electronic component is electrically connected to the second electrode of the first electronic component.
  • a current flowing through the third electronic component has a first ratio to a current flowing through the fourth electronic component.
  • the first electronic component, the second electronic component, and the fourth electronic component include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer is on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer is greater than the band gap of the first nitride semiconductor layer.
  • the present application provides an electronic device, which includes an electronic component with a nitride semiconductor layer, which can replace the traditional silicon sampling resistor.
  • the impedance of the electronic device of the present application can be mainly composed of two-dimensional electron gas, so that each electronic component has a similar or identical temperature coefficient, thereby effectively reducing the error and offset caused by the operation of the electronic device, and improving the operation performance and reliability of the electronic device.
  • FIG. 1 is a schematic diagram of a circuit according to some embodiments of the present application.
  • FIG. 2 is a schematic diagram of a circuit according to some other embodiments of the present application.
  • FIG. 3A is a schematic diagram of a portion of a circuit according to some embodiments of the present application.
  • FIG. 3B is a partial schematic diagram of a circuit according to some other embodiments of the present application.
  • FIG. 3C is a partial schematic diagram of a circuit according to some other embodiments of the present application.
  • FIG. 3D is a partial schematic diagram of a circuit according to some other embodiments of the present application.
  • FIG. 4 is a top view of an electronic device according to some embodiments of the present application.
  • FIG. 5A is a partial top view of an electronic device according to some embodiments of the present application.
  • FIG. 5B is a partial cross-sectional view of an electronic device according to some embodiments of the present application.
  • FIG. 6A is a partial top view of an electronic device according to some embodiments of the present application.
  • FIG. 6B is a partial cross-sectional view of an electronic device according to some embodiments of the present application.
  • FIG. 7A is a partial top view of an electronic device according to some embodiments of the present application.
  • FIG. 7B is a partial cross-sectional view of an electronic device according to some embodiments of the present application.
  • FIG. 8A is a partial top view of an electronic device according to some embodiments of the present application.
  • FIG. 8B is a partial cross-sectional view of an electronic device according to some embodiments of the present application.
  • FIG. 9A is a partial top view of an electronic device according to some embodiments of the present application.
  • FIG. 9B is a partial cross-sectional view of an electronic device according to some embodiments of the present application.
  • the reference to forming or arranging a first feature on or above a second feature may include an embodiment in which the first feature and the second feature are formed or arranged to be in direct contact, and may also include an embodiment in which other features may be formed or arranged between the first feature and the second feature so that the first feature and the second feature may not be in direct contact.
  • the present application may repeat reference numerals and/or letters in each example. This repetition is for the purpose of simplicity and clarity and is not intended to limit the relationship between the various embodiments and/or configurations discussed.
  • FIG. 1 is a schematic diagram of a circuit 1 according to some embodiments of the present application.
  • the circuit 1 may include a current mirror circuit.
  • the circuit 1 may include but is not limited to an electronic component 101, an electronic component 102, an electronic component 103, an amplifier 110, an electronic component 121, an electronic component 122, and an electronic component 123.
  • One or more of the electronic components 101 to 123 may include a power tube.
  • One or more of the electronic components 101 to 123 may include a switch tube.
  • One or more of the electronic components 101 to 123 may include a transistor.
  • the electronic component 101 One or more of 1 to 123 may include a nitride semiconductor layer.
  • the amplifier 110 may include a power amplifier.
  • the amplifier 110 may include an operational amplifier.
  • the drains of the electronic components 121 and 122 may be electrically connected to the voltage source Vd1.
  • the electronic component 121 may be connected in series to the electronic component 123.
  • the electronic component 123 may be electrically connected to the output terminal of the amplifier 110.
  • the electronic component 102 may be electrically connected to the non-inverting input terminal of the amplifier 110.
  • the electronic component 103 may be electrically connected to the inverting input terminal of the amplifier 110.
  • the electronic component 101 may be electrically connected between the two electronic components 102 and 103.
  • the current Ic1 may flow through the electronic component 122.
  • the current Id1 may flow through the electronic component 101.
  • the current Ic1 and the current Id1 may have a proportional relationship. In some embodiments, the current Ic1 and the current Id1 of the circuit 1 satisfy the following formula:
  • Ron is the on-resistance of the electronic component 101
  • Rsns is the on-resistance of the electronic component 103
  • M is the ratio parameter between the electronic component 121 and the electronic component 122
  • Errordyn is the on-resistance offset caused by the dynamic resistance error between different electronic components.
  • FIG. 2 is a schematic diagram of a circuit 2 according to some other embodiments of the present application.
  • the circuit 2 may include a current mirror circuit.
  • the circuit 2 may include a circuit 2A, an electronic component 231, and an electronic component 232.
  • the circuit 2A may include, but is not limited to, a resistor 201, a resistor 202, a resistor 203, an amplifier 210, an electronic component 221, an electronic component 222, an electronic component 223, and a capacitor 224.
  • One or more of the electronic components 221 to 232 may include a power tube.
  • One or more of the electronic components 221 to 232 may include a switch tube.
  • One or more of the electronic components 221 to 232 may include a transistor.
  • One or more of the electronic components 221 to 232 may include a nitride semiconductor layer.
  • One or more of the electronic components 221 to 232 may include GaN HEMT, SiC JFET, SiC MOSFET or Silicon MOSFET, which is not limited in the present application.
  • the amplifier 210 may include a power amplifier.
  • the amplifier 210 may include an operational amplifier, which is not limited in the present application.
  • the drain of the electronic component 231 and the electronic component 232 may be electrically connected to the terminal D.
  • the drain of the electronic component 231 and the electronic component 232 may be electrically connected to a voltage source.
  • the drain of the electronic component 231 and the electronic component 232 may be electrically connected to a signal source to control the opening and closing of the electronic component 231 and the electronic component 232.
  • the source of the electronic component 232 may be electrically connected to the terminal S.
  • the current flowing through the electronic component 232 is Id2.
  • the current flowing through the electronic component 231 and the current flowing through the electronic component 232 may be 1:K, where K is a positive integer greater than 1.
  • the resistor 203 may be electrically connected to the non-inverting input terminal of the amplifier 210.
  • the resistor 202 may be electrically connected to the inverting input terminal of the amplifier 210.
  • the resistor 201 may be electrically connected between the resistor 202 and the resistor 203.
  • the output terminal of the amplifier 210 may be electrically connected to the capacitor 224 and the gate of the electronic component 223.
  • the source of the electronic component 223 may be electrically connected to the resistor 202 and the non-inverting input terminal of the amplifier 210.
  • the drain of the electronic component 223 may be electrically connected to the source of the electronic component 222.
  • the gate of the electronic component 222 may be electrically connected to the gate of the electronic component 221.
  • the drain of the electronic component 221 and the drain of the electronic component 222 may be electrically connected to the voltage source Vd2.
  • the current Ic2 may flow through the electronic component 221.
  • circuit 2A may include a Silicon IC.
  • Electronic components 221, 222, and 223 may include NMOS transistors.
  • Electronic components 221, 222, and 223 may include PMOS transistors.
  • Resistors 201, 202, and 203 may include metal resistors.
  • Resistors 201, 202, and 203 may include polymer resistors.
  • electronic components 231 and 232 may include a nitride semiconductor layer.
  • Electronic components 231 and 232 may include GaN HEMTs, SiC JFETs, or SiC MOSFETs, which are not limited in the present application.
  • the current Ic2 and the current Id2 may have a proportional relationship. In some embodiments, the current Ic2 and the current Id2 of the circuit 2 satisfy the following formula:
  • R2 is the resistance value of the resistor 202
  • Rsns is the resistance value of the resistor 201
  • M is the ratio parameter between the electronic component 221 and the electronic component 222
  • K is the ratio parameter between the electronic component 231 and the electronic component 232 .
  • the electronic component 231 and the electronic component 232 operate in the same switching state.
  • the dynamic resistance of the electronic component 231 and the dynamic resistance of the electronic component 232 change in the same manner, thereby eliminating the error and offset caused by the dynamic resistance.
  • the temperature coefficient of the resistors 201, 202, and 203 may be less than 1.5.
  • the ratio of the resistance value of the resistors 201, 202, and 203 at a high temperature (such as but not limited to 150°C) to the resistance value at a normal temperature (such as but not limited to 25°C) may be less than 1.5.
  • the temperature coefficient of the electronic components 231 and 232 may be greater than 2.
  • the ratio of the resistance value of the electronic components 231 and 232 at a high temperature (such as but not limited to 150°C) to the resistance value at a normal temperature (such as but not limited to 25°C) may be greater than 2. Due to the different temperature coefficients of the resistors 201, 202, and 203 and the electronic components 231 and 232, when the circuit 2 operates at different temperatures, larger errors and offsets may occur.
  • FIG3A is a schematic diagram of a portion of a circuit 3A according to some embodiments of the present application.
  • the circuit 3A of FIG3A may correspond to or be similar to the circuit 2 of FIG2 .
  • the electronic component 331 of FIG3A may correspond to or be similar to the electronic component 231 of FIG2 .
  • the electronic component 332 of FIG3A may correspond to or be similar to the electronic component 232 of FIG2 .
  • the electronic component 341 of FIG3A may correspond to or be similar to the resistor 203 of FIG2 .
  • the electronic component 342 of FIG3A may correspond to or be similar to the resistor 202 of FIG2 .
  • the electronic component 343 of FIG3A may correspond to or be similar to the resistor 201 of FIG2 .
  • the gates of electronic component 331 and electronic component 332 may be electrically connected to node G.
  • the drains of electronic component 331 and electronic component 332 may be electrically connected to node D.
  • the source of electronic component 331 may be electrically connected to port 391.
  • the source of electronic component 332 may be electrically connected to port 392 and node S.
  • the drain of electronic component 341 may be electrically connected to node A.
  • the source of electronic component 341 may be electrically connected to port 391.
  • the gate of electronic component 341 may be electrically connected to terminal G, the gate of electronic component 342, and the gate of electronic component 343. It should be noted that the drain and source of each electronic component described in the present application are interchangeable. In some embodiments, the drain of an electronic component may be replaced or equivalent to a source, and the source of an electronic component may be replaced or equivalent to a drain, and the present application does not limit this.
  • the drain of electronic component 342 may be electrically connected to node B.
  • the gate of electronic component 342 may be electrically connected to the gate of electronic component 341 and the gate of electronic component 343.
  • the source of electronic component 342 may be electrically connected to node S and port 392.
  • the source of electronic component 343 may be electrically connected to port 392.
  • the gate of electronic component 343 may be electrically connected to terminal G, the gate of electronic component 341 and the gate of electronic component 342.
  • the drain of electronic component 343 may be electrically connected to port 391.
  • the above-mentioned port 391, port 392, node A, node B, node D and node S may be used to electrically connect a signal source, a voltage source, a current source or a ground terminal.
  • Circuit 3A may include a current mirror circuit. The currents flowing through different transistors in circuit 3A may have a proportional relationship.
  • electronic component 331 and electronic component 332 operate in the same switching state.
  • the change in the dynamic resistance of electronic component 331 is consistent with the change in the dynamic resistance of electronic component 332, which can reduce the error and offset caused by the dynamic resistance.
  • electronic components 331, 332, 341, 342, 343 may include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer may be on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer may be greater than the band gap of the first nitride semiconductor layer.
  • the temperature coefficients of electronic components 331 and 332 may be similar to or the same as the temperature coefficients of electronic components 341, 342 and 343, thereby effectively reducing the error and offset caused by circuit 3A during operation, thereby improving the operating performance and reliability of circuit 3A.
  • FIG. 3B is a partial schematic diagram of a circuit 3B according to some other embodiments of the present application.
  • the circuit 3B of FIG. 3B may correspond to or be similar to the circuit 2 of FIG. 2 .
  • the electronic component 331 of FIG. 3B may correspond to or be similar to the circuit 2 of FIG. 2 Subassembly 231.
  • Electronic assembly 332 of FIG. 3B may correspond to or be similar to electronic assembly 232 of FIG. 2.
  • Electronic assembly 351 of FIG. 3B may correspond to or be similar to resistor 203 of FIG. 2.
  • Electronic assembly 352 of FIG. 3B may correspond to or be similar to resistor 202 of FIG. 2.
  • Electronic assembly 353 of FIG. 3B may correspond to or be similar to resistor 201 of FIG. 2.
  • the gates of electronic component 331 and electronic component 332 may be electrically connected to node G.
  • the drains of electronic component 331 and electronic component 332 may be electrically connected to node D.
  • the source of electronic component 331 may be electrically connected to port 391.
  • the source of electronic component 332 may be electrically connected to port 392 and node S.
  • the source of electronic component 351 may be electrically connected to node A.
  • the drain of electronic component 351 may be electrically connected to port 391.
  • the gate of electronic component 351 may be electrically connected to the gate of electronic component 352 and the gate of electronic component 353.
  • the source of electronic component 352 may be electrically connected to node B.
  • the gate of electronic component 352 may be electrically connected to terminal G, the gate of electronic component 351, and the gate of electronic component 353.
  • the drain of electronic component 352 may be electrically connected to node S and port 392.
  • the source of electronic component 353 may be electrically connected to port 392.
  • the gate of electronic component 353 may be electrically connected to terminal G, the gate of electronic component 351, and the gate of electronic component 352.
  • the drain of electronic component 353 may be electrically connected to port 391.
  • the above-mentioned port 391, port 392, node A, node B, node D, and node S may be used to electrically connect a signal source, a voltage source, a current source, or a ground terminal.
  • Circuit 3B may include a current mirror circuit. The currents flowing through different transistors in circuit 3B may have a proportional relationship.
  • electronic component 331 and electronic component 332 operate in the same switching state.
  • the change in the dynamic resistance of electronic component 331 is consistent with the change in the dynamic resistance of electronic component 332, which can reduce the error and offset caused by the dynamic resistance.
  • electronic components 331, 332, 351, 352, 353 may include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer may be on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer may be greater than the band gap of the first nitride semiconductor layer.
  • the temperature coefficients of electronic components 331 and 332 may be similar to or the same as the temperature coefficients of electronic components 351, 352 and 353, thereby effectively reducing the error and offset caused by circuit 3B during operation, thereby improving the operating performance and reliability of circuit 3B.
  • FIG3C is a partial schematic diagram of a circuit 3C according to some other embodiments of the present application.
  • the circuit 3C of FIG3C may correspond to or be similar to the circuit 2 of FIG2 .
  • the electronic component 331 of FIG3C may correspond to or be similar to the electronic component 231 of FIG2 .
  • the electronic component 332 of FIG3C may correspond to or be similar to the electronic component 232 of FIG2 .
  • the electronic component 361 of FIG3C may correspond to or be similar to the resistor 203 of FIG2 .
  • the electronic component 362 of FIG3C may correspond to or be similar to the resistor 202 of FIG2 .
  • the electronic component 363 of FIG3C may correspond to or be similar to the resistor 201 of FIG2 .
  • the gates of electronic components 331 and 332 may be electrically connected to node G.
  • the drains of electronic components 331 and 332 may be electrically connected to node D.
  • the source of electronic component 331 may be electrically connected to port 391.
  • the source of electronic component 332 may be electrically connected to port 392 and node S.
  • the drain of electronic component 361 may be electrically connected to node A.
  • the source of electronic component 361 may be electrically connected to port 391.
  • the gate of electronic component 361 may be electrically connected to node G1.
  • the drain of electronic component 362 may be electrically connected to node B.
  • the gate of electronic component 362 may be electrically connected to node G2.
  • the source of electronic component 362 may be electrically connected to node S and port 392.
  • the drain of electronic component 363 may be electrically connected to port 391.
  • the gate of electronic component 363 may be electrically connected to node G3.
  • the source of electronic component 363 may be electrically connected to node S and port 392.
  • the above-mentioned port 391, port 392, node A, node B, node G, node G1, node G2, node G3, node D and node S can be used to electrically connect a signal source, a voltage source, a current source or a ground terminal.
  • Circuit 3C may include a current mirror circuit. The currents flowing through different transistors in circuit 3C may have a proportional relationship.
  • the electronic component 331 and the electronic component 332 operate in the same switching state.
  • the dynamic resistance of the electronic component 331 and the dynamic resistance of the electronic component 332 change in a consistent manner, which can reduce the error and offset caused by the dynamic resistance.
  • the electronic components 331, 332, 361, 362, 363 may include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer may be on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer may be greater than that of the first nitride semiconductor layer.
  • the temperature coefficients of the electronic components 331 and 332 may be similar to or the same as the temperature coefficients of the electronic components 361 , 362 , and 363 , thereby effectively reducing the error and offset caused by the operation of the circuit 3C and improving the operation performance and reliability of the circuit 3C.
  • FIG3D is a schematic diagram of a portion of a circuit according to some other embodiments of the present application.
  • the circuit 3D of FIG3D may correspond to or be similar to the circuit 2 of FIG2 .
  • the electronic component 331 of FIG3D may correspond to or be similar to the electronic component 231 of FIG2 .
  • the electronic component 332 of FIG3D may correspond to or be similar to the electronic component 232 of FIG2 .
  • the electronic component 371 of FIG3D may correspond to or be similar to the resistor 203 of FIG2 .
  • the electronic component 372 of FIG3D may correspond to or be similar to the resistor 202 of FIG2 .
  • the electronic component 373 of FIG3D may correspond to or be similar to the resistor 201 of FIG2 .
  • the gates of electronic component 331 and electronic component 332 may be electrically connected to node G.
  • the drains of electronic component 331 and electronic component 332 may be electrically connected to node D.
  • the source of electronic component 331 may be electrically connected to port 391.
  • the source of electronic component 332 may be electrically connected to port 392 and node S.
  • the drain of electronic component 371 may be electrically connected to node A.
  • the source of electronic component 371 may be electrically connected to port 391.
  • the gate of electronic component 371 may be electrically connected to voltage source 374, the gate of electronic component 372, and the gate of electronic component 373.
  • the drain of electronic component 372 may be electrically connected to node B.
  • the gate of electronic component 372 may be electrically connected to voltage source 374, the gate of electronic component 371 and the gate of electronic component 373.
  • the source of electronic component 372 may be electrically connected to voltage source 374, node S and port 392.
  • the drain of electronic component 373 may be electrically connected to port 391.
  • the source of electronic component 373 may be electrically connected to voltage source 374, node S and port 392.
  • the above-mentioned port 391, port 392, node A, node B, node D and node S may be used to electrically connect a signal source, a voltage source, a current source or a ground terminal.
  • Circuit 3D may include a current mirror circuit. The currents flowing through different transistors in circuit 3D may have a proportional relationship.
  • electronic component 331 and electronic component 332 operate in the same switching state.
  • the change in the dynamic resistance of electronic component 331 is consistent with the change in the dynamic resistance of electronic component 332, which can reduce the error and offset caused by the dynamic resistance.
  • electronic components 331, 332, 371, 372, 373 may include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer may be on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer may be greater than the band gap of the first nitride semiconductor layer.
  • the temperature coefficients of electronic components 331 and 332 may be similar to or the same as the temperature coefficients of electronic components 371, 372 and 373, thereby effectively reducing the error and offset caused by circuit 3D during operation, thereby improving the operating performance and reliability of circuit 3D.
  • FIG4 is a top view of an electronic device 4 according to some embodiments of the present application.
  • the electronic device 4 of FIG4 may correspond to or be similar to one or more of the circuit 2 of FIG2 , the circuit 3A of FIG3A , the circuit 3B of FIG3B , the circuit 3C of FIG3C , and the circuit 3D of FIG3D , and the present application is not limited thereto.
  • the electronic device 4 may include an electronic component 431, an electronic component 441, an electronic component 442, and an electronic component 443.
  • the electronic component 431 may correspond to or be similar to the circuit 331 of FIG3A .
  • the electronic component 441 may correspond to or be similar to the circuit 341 of FIG3A .
  • the electronic component 442 may correspond to or be similar to the circuit 342 of FIG3A .
  • the electronic component 443 may correspond to or be similar to the circuit 343 of FIG3A .
  • the conductive structure 481 may be disposed between the plurality of electronic components 431, 441, 443.
  • the conductive structure 482 may be disposed between two electronic components 443 and 442.
  • Electronic component 431 may include conductive structure 431d, conductive structure 431g, and port 461. Port 461 of electronic component 431 may be adjacent to conductive structure 481.
  • Electronic component 443 may include conductive structure 443g, port 461, and port 462. Port 461 and port 462 of electronic component 443 may be adjacent to conductive structure 481 and conductive structure 482, respectively.
  • Electronic component 442 may include conductive structure 442g, port 462, and port 464. Port 462 of electronic component 442 may be adjacent to conductive structure 482.
  • Electronic component 441 may include conductive structure 441g, port 461, and port 463. Port 461 of electronic component 441 may be adjacent to conductive structure 481.
  • Fig. 5A is a partial top view of an electronic device 5A according to some embodiments of the present application.
  • the electronic device 5A of Fig. 5A may correspond to or be similar to a portion of the circuit 4 of Fig. 4 .
  • the electronic device 5A may include a conductive structure 531d, a conductive structure 531g, a port 561, a conductive structure 581, a conductive structure 543g, and a port 562.
  • the conductive structure 531d, the conductive structure 531g, and the port 561 may form an electronic component.
  • the electronic component may include but is not limited to the electronic component 431 of FIG. 4.
  • the port 561, the conductive structure 543g, and the port 562 may form another electronic component.
  • the electronic component may include but is not limited to the electronic component 443 of FIG. 4, and the present application is not limited thereto.
  • Fig. 5B is a partial cross-sectional view of an electronic device 5B according to some embodiments of the present application.
  • the electronic device 5B of Fig. 5B may correspond to the cross-sectional view of the section line 51 in the top view of the electronic device 5A of Fig. 5A.
  • the electronic device 5B may include a nitride semiconductor layer 510 , a nitride semiconductor layer 520 , a conductive structure 531 d , a conductive structure 531 g , a nitride semiconductor structure 524 , a conductive structure 531 s , a conductive structure 581 , a port 561 , a conductive structure 543 g , a nitride semiconductor structure 525 , a port 562 , a doped structure 551 , and a doped structure 552 .
  • the nitride semiconductor layer 510 may be disposed on a substrate.
  • the substrate may include but is not limited to silicon (Si), doped Si, silicon carbide (SiC), silicon germanium (SiGe), gallium arsenide (GaAs) or other semiconductor materials.
  • the substrate may include but is not limited to sapphire, silicon on insulator (SOI) or other suitable materials.
  • the thickness of the substrate may be in the range of about 200 ⁇ m to about 400 ⁇ m, for example, 220 ⁇ m, 240 ⁇ m, 260 ⁇ m, 280 ⁇ m, 300 ⁇ m, 320 ⁇ m, 340 ⁇ m, 360 ⁇ m or 380 ⁇ m.
  • the nitride semiconductor layer 510 may include a III-V group layer.
  • the nitride semiconductor layer 510 may include, but is not limited to, a group III nitride, such as a compound InaAlbGa1-a-bN, where a+b ⁇ 1.
  • the group III nitride further includes, but is not limited to, a compound AlaGa(1-a)N, where a ⁇ 1.
  • the nitride semiconductor layer 510 may include a gallium nitride (GaN) layer.
  • the energy gap of GaN is about 3.4 eV.
  • the thickness of the nitride semiconductor layer 510 may range from, but is not limited to, about 0.1 ⁇ m to about 1 ⁇ m.
  • the nitride semiconductor layer 520 (or barrier layer) may be disposed on the nitride semiconductor layer 510.
  • the nitride semiconductor layer 520 may include a III-V group layer.
  • the nitride semiconductor layer 520 may include, but is not limited to, a group III nitride, such as a compound InaAlbGa1-a-bN, where a+b ⁇ 1.
  • the group III nitride may further include, but is not limited to, for example, a compound AlaGa(1-a)N, where a ⁇ 1.
  • the energy gap of the nitride semiconductor layer 520 may be greater than the energy gap of the nitride semiconductor layer 510.
  • the nitride semiconductor layer 520 may include an aluminum gallium nitride (AlGaN) layer.
  • AlGaN aluminum gallium nitride
  • the energy gap of AlGaN is about 4.0 eV.
  • the thickness of the nitride semiconductor layer 520 may range from, but is not limited to, about 10 nm to about 100 nm.
  • a heterojunction is formed between the nitride semiconductor layer 520 and the nitride semiconductor layer 510 , and polarization of the heterojunction forms a region of two-dimensional electron gas (2DEG) 512 in the nitride semiconductor layer 510 .
  • 2DEG two-dimensional electron gas
  • the conductive structure 531d, the conductive structure 531g, the nitride semiconductor structure 524, the conductive structure 531s, the conductive structure 581, the port 561, the conductive structure 543g, the nitride semiconductor structure 525, and the port 562 may be directly or indirectly disposed on the nitride semiconductor layer 520.
  • the conductive structure 531d may be formed on the nitride semiconductor layer 520.
  • the conductive structure 531d may include, for example, but not limited to, a conductive material.
  • the conductive material may include a metal, an alloy, a doped semiconductive material (e.g., doped crystalline silicon) or other suitable conductive materials, such as Ti, Al, Ni, Cu, Au, Pt, Pd, W, TiN or other suitable materials.
  • the conductive structure 531d may include a multilayer structure.
  • the conductive structure 531d may include a structure of two layers of different materials.
  • the conductive structure 531d may include a three-layer structure, in which two adjacent layers are made of different materials.
  • the conductive structure 531d may serve as a source.
  • the conductive structure 531d may serve as a gate.
  • the conductive structure 531d may serve as a drain.
  • the conductive structure 531d may be electrically connected to ground.
  • the nitride semiconductor structure 524 may be formed on the nitride semiconductor layer 520.
  • the nitride semiconductor structure 524 (or depletion layer) may be in direct contact with the nitride semiconductor layer 520.
  • the body structure 524 may be disposed between the conductive structure 531d and the conductive structure 531s.
  • the nitride semiconductor structure 524 may be doped with impurities (dopant).
  • the nitride semiconductor structure 524 may include a p-type dopant.
  • the nitride semiconductor structure 524 may include a p-type doped GaN layer, a p-type doped AlGaN layer, a p-type doped AlN layer or other suitable III-V family layers.
  • the p-type dopant may include magnesium (Mg), beryllium (Be), zinc (Zn) and cadmium (Cd).
  • the nitride semiconductor structure 524 may be configured to control the concentration of the 2DEG 512 in the nitride semiconductor layer 510.
  • the nitride semiconductor structure 524 may be used to deplete the 2DEG 512 directly below the nitride semiconductor structure 524.
  • the conductive structure 531g may be formed on the nitride semiconductor structure 524.
  • the conductive structure 531g may be in direct contact with the nitride semiconductor structure 524.
  • the conductive structure 531g may be disposed between the conductive structure 531d and the conductive structure 531s.
  • the material of the conductive structure 531g may be the same as the material of the conductive structure 531d.
  • the material of the conductive structure 531g may be different from the material of the conductive structure 531d.
  • the conductive structure 531s may be formed on the nitride semiconductor layer 520.
  • the conductive structure 531s may be in direct contact with the nitride semiconductor layer 520.
  • the conductive structure 531s may be disposed between the conductive structure 531g and the port 561.
  • the conductive structure 531s may include the port 561.
  • the port 561 may include the conductive structure 531s.
  • the conductive structure 531s may be disposed between the conductive structure 581 and the nitride semiconductor layer 520.
  • the material of the conductive structure 531s may be the same as the material of the conductive structure 531d.
  • the material of the conductive structure 531s may be different from the material of the conductive structure 531d.
  • the doping structure 551 may be disposed adjacent to the nitride semiconductor layer 510 and the nitride semiconductor layer 520.
  • the side surface of the doping structure 551 may directly contact the side surface of the nitride semiconductor layer 510 and the side surface of the nitride semiconductor layer 520.
  • the doping structure 551 may be doped with impurities.
  • the doping structure 551 may include p-type dopants.
  • the doping structure 551 may include n-type dopants.
  • Port 561 may be formed on nitride semiconductor layer 520. Port 561 may be in direct contact with nitride semiconductor layer 520. Port 561 may be disposed between conductive structure 531s and conductive structure 543g. Port 561 may be disposed between conductive structure 581 and nitride semiconductor layer 520. Port 561 may include an ohmic contact. Port 561 may include, for example but not limited to, a conductive material.
  • the conductive material may include metal, alloy, doped semiconductive material (e.g., doped crystalline silicon) or other suitable conductive materials, such as Ti, Al, Ni, Cu, Au, Pt, Pd, W, TiN or other suitable materials.
  • Port 561 may include a multilayer structure.
  • port 561 may include a structure of two layers of different materials.
  • Port 561 may include a three-layer structure in which two adjacent layers are made of different materials.
  • Port 561 may serve as a source.
  • Port 561 may serve as a gate.
  • Port 561 may serve as a drain.
  • Port 561 may be electrically connected to ground.
  • Conductive structure 581 may be formed on conductive structure 531s. Conductive structure 581 may be in direct contact with conductive structure 531s. Conductive structure 581 may be formed on port 561. Conductive structure 581 may be in direct contact with port 561. Conductive structure 531s may be disposed between conductive structure 531g and port conductive structure 543g. Doped structure 551, conductive structure 531s, conductive structure 581, and port 561 may form a cavity. The material of conductive structure 581 may be the same as the material of conductive structure 531d. The material of conductive structure 581 may be different from the material of conductive structure 531d.
  • the nitride semiconductor structure 525 may be formed on the nitride semiconductor layer 520.
  • the nitride semiconductor structure 525 (or depletion layer) may be in direct contact with the nitride semiconductor layer 520.
  • the nitride semiconductor structure 525 may be disposed between the port 561 and the port 562.
  • the nitride semiconductor structure 525 may be doped with impurities.
  • the nitride semiconductor structure 525 may include a p-type dopant.
  • the nitride semiconductor structure 525 may include a p-type doped GaN layer, a p-type doped AlGaN layer, a p-type doped AlN layer, or other suitable III-V group layers.
  • the p-type dopant may include magnesium (Mg), beryllium (Be), zinc (Zn), and cadmium (Cd).
  • the nitride semiconductor structure 525 may be configured to control the concentration of the 2DEG 512 in the nitride semiconductor layer 510.
  • the nitride semiconductor structure 525 may be used to deplete the 2DEG 512 directly below the nitride semiconductor structure 525.
  • the conductive structure 543g may be formed on the nitride semiconductor structure 525.
  • the conductive structure 543g may be in direct contact with the nitride semiconductor structure 525.
  • the conductive structure 543g may be disposed between the port 561 and the port 562.
  • the material of the conductive structure 543g may be the same as the material of the conductive structure 531d.
  • the material of the conductive structure 543g may not be The same material as the conductive structure 531d.
  • Port 562 may be formed on nitride semiconductor layer 520. Port 562 may be in direct contact with nitride semiconductor layer 520. Port 562 may include an ohmic contact. Port 562 may include, for example, but not limited to, a conductive material.
  • the conductive material may include a metal, an alloy, a doped semiconductive material, or other suitable conductive material, such as Ti, Al, Ni, Cu, Au, Pt, Pd, W, TiN, or other suitable materials.
  • Port 562 may include a multilayer structure. For example, port 562 may include a structure of two layers of different materials. Port 562 may include a three-layer structure, in which two adjacent layers are made of different materials. Port 562 may serve as a source. Port 562 may serve as a gate. Port 562 may serve as a drain. Port 562 may be electrically connected to ground.
  • the doping structure 552 may be disposed adjacent to the nitride semiconductor layer 510 and the nitride semiconductor layer 520.
  • the side surface of the doping structure 552 may directly contact the side surface of the nitride semiconductor layer 510 and the side surface of the nitride semiconductor layer 520.
  • the doping structure 552 may be doped with impurities.
  • the doping structure 552 may include p-type dopants.
  • the doping structure 552 may include n-type dopants.
  • the impedance of multiple electronic components of the electronic device 5B may include 2DEG 512.
  • the impedance of each electronic component of the electronic device 5B may be mainly composed of 2DEG 512.
  • the temperature coefficient of each electronic component of the electronic device 5B may be the same or similar. Therefore, the electronic device 5B proposed in the present application can effectively reduce the errors of various electrical parameters caused by the difference in temperature coefficients, thereby improving the performance and reliability of the electronic device 5B.
  • Fig. 6A is a partial top view of an electronic device 6A according to some embodiments of the present application.
  • the electronic device 6A of Fig. 6A may correspond to or be similar to a portion of the circuit 4 of Fig. 4 .
  • the electronic device 6A may include a conductive structure 631d, a conductive structure 631g, a port 661, a conductive structure 681, and a port 662.
  • the conductive structure 631d, the conductive structure 631g, and the port 661 may form an electronic component, such as but not limited to the electronic component 431 of FIG. 4.
  • the port 661 and the port 662 may form another electronic component, such as but not limited to the electronic component 443 of FIG. 4, and the present application is not limited thereto.
  • FIG6B is a partial cross-sectional view of an electronic device 6B according to some embodiments of the present application.
  • the electronic device 6B of FIG6B may correspond to the cross-sectional view of the section line 61 in the top view of the electronic device 6A of FIG6A.
  • the electronic device 6B may include a nitride semiconductor layer 610, a nitride semiconductor layer 620, a conductive structure 631d, a conductive structure 631g, a nitride semiconductor structure 624, a conductive structure 631s, a conductive structure 681, a port 661, a port 662, a doped structure 651, and a doped structure 652.
  • the electronic device 6B of FIG. 6B may be the same as or similar to the electronic device 5B of FIG. 5B , with the following differences.
  • the 2DEG 512 below the conductive structure 531g and the nitride semiconductor structure 524 accounts for a relatively small proportion of the impedance of the electronic device 5B.
  • the above proportion may include but is not limited to less than 20%, less than 10%, or less than 5%.
  • the conductive structure 531g and the nitride semiconductor structure 524 of FIG. 5B may be omitted.
  • no conductive structure and no nitride semiconductor structure are provided between the port 661 and the port 662 .
  • the electronic device 6B of FIG. 6B improves the degree of circuit integration.
  • the impedance of multiple electronic components of the electronic device 6B may include a 2DEG 612.
  • the impedance of each electronic component of the electronic device 6B may be mainly composed of a 2DEG 612.
  • the temperature coefficient of each electronic component of the electronic device 6B may be the same or similar. Therefore, the electronic device 6B proposed in the present application can effectively reduce the errors of various electrical parameters caused by the difference in temperature coefficients, thereby improving the performance and reliability of the electronic device 6B.
  • Fig. 7A is a top view of a portion of an electronic device according to some embodiments of the present application.
  • the electronic device 7A of Fig. 7A may correspond to or be similar to a portion of the circuit 4 of Fig. 4 .
  • the electronic device 7A may include a conductive structure 731d, a conductive structure 731g, a port 761, a conductive structure 743g, and a port 762.
  • the conductive structure 731d, the conductive structure 731g, and the port 761 may form an electronic component, such as but not limited to the electronic component 431 of FIG. 4.
  • the port 761, the conductive structure 743g, and the port 762 may form another electronic component, such as but not limited to the electronic component 443 of FIG. 4. Applications are not restricted.
  • FIG7B is a partial cross-sectional view of an electronic device 7B according to some embodiments of the present application.
  • the electronic device 7B of FIG7B may correspond to the cross-sectional view of the section line 71 in the top view of the electronic device 7A of FIG7A.
  • the electronic device 7B may include a nitride semiconductor layer 710, a nitride semiconductor layer 720, a conductive structure 731d, a conductive structure 731g, a nitride semiconductor structure 724, a port 761, a conductive structure 743g, a nitride semiconductor structure 725, a port 762, and a doped structure 751.
  • the electronic device 7B of FIG. 7B may be the same or similar to the electronic device 6B of FIG. 6B , with the following differences.
  • the conductive structure 681 , the conductive structure 631 s and the port 661 may be integrated into a single port.
  • the conductive structure 681 and the conductive structure 631 s may be omitted.
  • the electronic components in the embodiment of FIG. 6B may share the above-mentioned single port.
  • a single and independent port 761 may be disposed between the conductive structure 731 g and the conductive structure 743 g.
  • no conductive structure is disposed between the conductive structure 731 g and the conductive structure 743 g.
  • no cavity is disposed between the conductive structure 731 g and the conductive structure 743 g.
  • no doping structure is disposed between the conductive structure 731 g and the conductive structure 743 g.
  • the electronic device 7B of FIG. 7B further improves the degree of circuit integration.
  • the impedance of multiple electronic components of the electronic device 7B may include 2DEG 712.
  • the impedance of each electronic component of the electronic device 7B may be mainly composed of 2DEG 712.
  • the temperature coefficient of each electronic component of the electronic device 7B may be the same or similar. Therefore, the electronic device 7B proposed in the present application can effectively reduce the errors of various electrical parameters caused by the difference in temperature coefficients, thereby improving the performance and reliability of the electronic device 7B.
  • Fig. 8A is a top view of a portion of an electronic device according to some embodiments of the present application.
  • the electronic device 8A of Fig. 8A may correspond to or be similar to a portion of the circuit 4 of Fig. 4 .
  • the electronic device 8A may include a conductive structure 831d, a conductive structure 831g, a port 861, and a port 862.
  • the conductive structure 831d, the conductive structure 831g, and the port 861 may form an electronic component, such as but not limited to the electronic component 431 of FIG. 4.
  • the port 861 and the port 862 may form another electronic component, such as but not limited to the electronic component 443 of FIG. 4, and the present application is not limited thereto.
  • FIG8B is a partial cross-sectional view of an electronic device 8B according to some embodiments of the present application.
  • the electronic device 8B of FIG8B may correspond to the cross-sectional view of the section line 81 in the top view of the electronic device 8A of FIG8A.
  • the electronic device 8B may include a nitride semiconductor layer 810, a nitride semiconductor layer 820, a conductive structure 831d, a conductive structure 831g, a nitride semiconductor structure 824, a port 861, a port 862, and a doping structure 851.
  • the electronic device 8B of FIG. 8B may be the same as or similar to the electronic device 7B of FIG. 7B , with the following differences.
  • the 2DEG 712 below the conductive structure 743g and the nitride semiconductor structure 725 accounts for a relatively small proportion of the impedance of the electronic device 7B.
  • the above proportion may include but is not limited to less than 20%, less than 10%, or less than 5%.
  • the conductive structure 743g and the nitride semiconductor structure 725 of FIG. 7B may be omitted.
  • no conductive structure and no nitride semiconductor structure are provided between the port 861 and the port 862 .
  • the electronic device 8B of FIG. 8B improves the degree of circuit integration.
  • the impedance of multiple electronic components of the electronic device 8B may include 2DEG 812.
  • the impedance of each electronic component of the electronic device 8B may be mainly composed of 2DEG 812.
  • the temperature coefficient of each electronic component of the electronic device 8B may be the same or similar. Therefore, the electronic device 8B proposed in the present application can effectively reduce the errors of various electrical parameters caused by the difference in temperature coefficients, thereby improving the performance and reliability of the electronic device 8B.
  • FIG. 9A is a partial top view of an electronic device 9A according to some embodiments of the present application.
  • the electronic device 9A may include a conductive structure 931d, a conductive structure 931g, a port 961, and a port 962.
  • the conductive structure 931d and the conductive structure 931g have a width W1.
  • the port 961 and the port 962 have a width W2.
  • the width W1 may be less than the width W2.
  • the width W1 may be equal to or similar to the width W2.
  • the width W1 may be greater than the width W2.
  • FIG9B is a partial cross-sectional view of an electronic device 9B according to some embodiments of the present application.
  • the electronic device 9B of FIG9B may correspond to the cross-sectional view of the section line 91 in the top view of the electronic device 9A of FIG9A .
  • the electronic device 9B may include a nitride semiconductor layer 910, a nitride semiconductor layer 920, a conductive structure 931d, a conductive structure 931g, a nitride semiconductor structure 924, a port 961, a port 962, and a doping structure 951.
  • the distance between the conductive structure 931d and the port 961 is a length L1.
  • the port 961 has a length L2.
  • the distance between the port 962 and the port 961 is a length L3.
  • the port 962 has a length L4.
  • the impedance value of the resistance of the electronic device 9B may include the ohmic contact resistance of the port 961 and the ohmic contact resistance of the port 962.
  • the impedance value of the resistance of the electronic device 9B may include the 2DEG 912 covered by the length L3.
  • the impedance value of the resistance of the electronic device 9B may include the 2DEG 912 covered by the length L1.
  • the temperature coefficient of the ohmic contact resistance is less than the temperature coefficient of the 2DEG 912.
  • the proportion of the impedance value of the resistance of the electronic device 9B occupied by all or part of the 2DEG 912 can be increased so that the temperature coefficients of different electronic components (such as the electronic components 431 and 443 of FIG. 4, or the electronic components 331 and 343 of FIG. 3) can be approximated or matched with each other.
  • the portion of the 2DEG 912 in the length L1 can be adjusted separately.
  • the portion of the 2DEG 912 in the length L2 can be adjusted separately.
  • the portion of the 2DEG 912 in the length L3 can be adjusted separately.
  • the portion of the 2DEG 912 in the length L4 can be adjusted separately. In some embodiments, one or more portions of the 2DEG 912 in the length L1, the length L2, the length L3, and the length L4 can be adjusted, and the present application is not limited thereto.
  • the length L1 can be greater than the length L3. In some embodiments, the length L3 can be greater than the length L2.
  • the ratio between the length L3 and the length L2 can be greater than K, where K is a positive integer greater than 1. In some embodiments, the length L3 may be greater than the length L4.
  • the ratio between the length L3 and the length L4 may be greater than K, where K is a positive integer greater than 1.
  • the present application provides a method for manufacturing an electronic device, comprising: providing a first electronic component; providing a second electronic component, a first electrode of which is electrically connected to a first port and the first electrode of the first electronic component; providing a third electronic component, wherein the second electronic component is electrically connected to the third electronic component via an amplifier; and providing a fourth electronic component, a first electrode of which is electrically connected to the second electrode of the first electronic component.
  • a current flowing through the third electronic component has a first ratio to a current flowing through the fourth electronic component.
  • the first electronic component, the second electronic component, and the fourth electronic component include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer is on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer is greater than the band gap of the first nitride semiconductor layer.
  • a fifth electronic component is further provided, wherein the first electrode thereof is electrically connected to the first port, and the second electrode thereof is electrically connected to the non-inverting input terminal of the amplifier.
  • a sixth electronic component is further provided, wherein the first electrode thereof is electrically connected to a second port with the second electrode of the second electronic component, and the second electrode thereof is electrically connected to the inverting input terminal of the amplifier.
  • the third electrode of the second electronic component is electrically connected to the third electrode of the fifth electronic component and the third electrode of the sixth electronic component.
  • the third electrode of the second electronic component is electrically connected to the third electrode of the first electronic component.
  • an electronic device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first conductive structure, a second conductive structure, a first port, and a second port.
  • the first nitride semiconductor layer is on the substrate.
  • the second nitride semiconductor layer is on the first nitride semiconductor layer, and the band gap of the second nitride semiconductor layer is greater than the band gap of the first nitride semiconductor layer.
  • the first conductive structure is on the second nitride semiconductor layer.
  • the first port is on the second nitride semiconductor layer.
  • the second conductive structure is located between the first port and the first conductive structure.
  • the second port is on the second nitride semiconductor layer, and the first port is located between the second port and the second conductive structure.
  • a method for manufacturing an electronic device includes providing an amplifier; providing a first electronic component; providing a second electronic component, a first electrode of which is electrically connected to a first port and the first electrode of the first electronic component; providing a third electronic component, wherein the second electronic component is electrically connected to the third electronic component via the amplifier; and providing a fourth electronic component, a first electrode of which is electrically connected to the second electrode of the first electronic component.
  • a current flowing through the third electronic component has a first ratio to a current flowing through the fourth electronic component.
  • the first electronic component, the second electronic component, and the fourth electronic component include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer is on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer is greater than the band gap of the first nitride semiconductor layer.
  • an electronic device includes a first electronic component, a second electronic component, a third electronic component, and a fourth electronic component.
  • a first electrode of the second electronic component is electrically connected to a first port and the first electrode of the first electronic component.
  • the second electronic component is electrically connected to the third electronic component via an amplifier.
  • the first electrode of the fourth electronic component is electrically connected to the second electrode of the first electronic component.
  • a current flowing through the third electronic component has a first ratio to a current flowing through the fourth electronic component.
  • the first electronic component, the second electronic component, and the fourth electronic component include a first nitride semiconductor layer and a second nitride semiconductor layer.
  • the second nitride semiconductor layer is on the first nitride semiconductor layer.
  • the band gap of the second nitride semiconductor layer is greater than the band gap of the first nitride semiconductor layer.
  • spatial descriptions such as “above”, “below”, “upward”, “left”, “right”, “downward”, “top”, “bottom”, “vertical”, “horizontal”, “side”, “above”, “below”, “upper”, “above”, “below” are relative to the orientation shown in the drawings. It should be understood that the spatial descriptions used herein are for illustrative purposes only, and actual embodiments of the structures described herein may be spatially arranged in any orientation or manner, with the limitation that the advantages of the embodiments of the present application are not deviated by such arrangements.
  • vertical is used to refer to an upward and downward direction
  • horizontal refers to a direction transverse to the vertical direction
  • the terms “approximately,” “substantially,” “substantially,” and “about” are used to describe and explain small variations.
  • the terms may refer to instances where the event or circumstance occurred precisely as well as instances where the event or circumstance occurred very approximately.
  • the terms may refer to a range of variation of less than or equal to ⁇ 10% of the numerical value, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%.
  • a first numerical value is within a range of variation of less than or equal to ⁇ 10% of a second numerical value, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%, then the first numerical value may be considered to be "substantially" the same as or equal to the second numerical value.
  • substantially vertical may refer to an angular variation range of less than or equal to ⁇ 10° relative to 90°, such as less than or equal to ⁇ 5°, less than or equal to ⁇ 4°, less than or equal to ⁇ 3°, less than or equal to ⁇ 2°, less than or equal to ⁇ 1°, less than or equal to ⁇ 0.5°, less than or equal to ⁇ 0.1°, or less than or equal to ⁇ 0.05°.
  • Two surfaces are considered coplanar or substantially coplanar if the displacement between them is no more than 5 ⁇ m, no more than 2 ⁇ m, no more than 1 ⁇ m, or no more than 0.5 ⁇ m.
  • a surface is considered substantially flat if the displacement between the highest point and the lowest point of the surface is no more than 5 ⁇ m, no more than 2 ⁇ m, no more than 1 ⁇ m, or no more than 0.5 ⁇ m.
  • conductive As used herein, the terms “conductive,””electricallyconductive,” and “conductivity” refer to the ability to carry an electric current. Conductive materials generally refer to those materials that present little or no resistance to the flow of electric current. One measure of conductivity is Siemens per meter (S/m). Typically, a conductive material is a material having a conductivity greater than about 104 S/m (e.g., at least 105 S/m or at least 106 S/m). The electrical conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the electrical conductivity of a material is measured at room temperature.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

La présente demande propose un dispositif électronique et un procédé de fabrication associé. Le dispositif électronique comprend un substrat, une première couche semi-conductrice au nitrure, une seconde couche semi-conductrice au nitrure, une première structure conductrice, une seconde structure conductrice, un premier orifice et un second orifice. La première couche semi-conductrice au nitrure se trouve sur le substrat. La seconde couche semi-conductrice au nitrure se trouve sur la première couche semi-conductrice au nitrure, et une bande interdite de la seconde couche semi-conductrice au nitrure est supérieure à celle de la première couche semi-conductrice au nitrure. La première structure conductrice se trouve sur la seconde couche semi-conductrice au nitrure. Le premier orifice se trouve sur la seconde couche semi-conductrice au nitrure, et la seconde structure conductrice est située entre le premier orifice et la première structure conductrice. Le second orifice se trouve sur la seconde couche semi-conductrice au nitrure, et le premier orifice est situé entre le second orifice et la seconde structure conductrice.
PCT/CN2023/124905 2022-10-20 2023-10-17 Dispositif électronique et procédé de fabrication associé, et circuit WO2024083108A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202211289992.5 2022-10-20
CN202211289992.5A CN115566061B (zh) 2022-10-20 2022-10-20 一种电子装置、电路及其制造方法

Publications (1)

Publication Number Publication Date
WO2024083108A1 true WO2024083108A1 (fr) 2024-04-25

Family

ID=84767446

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/124905 WO2024083108A1 (fr) 2022-10-20 2023-10-17 Dispositif électronique et procédé de fabrication associé, et circuit

Country Status (2)

Country Link
CN (1) CN115566061B (fr)
WO (1) WO2024083108A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115566061B (zh) * 2022-10-20 2024-01-02 英诺赛科(苏州)半导体有限公司 一种电子装置、电路及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110233559A1 (en) * 2010-03-26 2011-09-29 Renesas Electronics Corporation Field-effect transistor
US20170125533A1 (en) * 2015-10-30 2017-05-04 Fujitsu Limited Semiconductor apparatus
CN109392218A (zh) * 2017-08-09 2019-02-26 富士电机株式会社 调光装置及电力变换装置
CN112840464A (zh) * 2021-01-12 2021-05-25 英诺赛科(苏州)半导体有限公司 半导体器件及其制造方法
CN113220060A (zh) * 2021-04-30 2021-08-06 深圳市国微电子有限公司 高电源抑制比的带隙基准电路和电子设备
CN115566061A (zh) * 2022-10-20 2023-01-03 英诺赛科(苏州)半导体有限公司 一种电子装置、电路及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799643B2 (en) * 2013-05-23 2017-10-24 Infineon Technologies Austria Ag Gate voltage control for III-nitride transistors
US9983239B2 (en) * 2016-05-13 2018-05-29 Power Integrations, Inc. Integrated linear current sense circuitry for semiconductor transistor devices
US11658236B2 (en) * 2019-05-07 2023-05-23 Cambridge Gan Devices Limited III-V semiconductor device with integrated power transistor and start-up circuit
US10818786B1 (en) * 2019-05-07 2020-10-27 Cambridge Gan Devices Limited III-V semiconductor device with integrated protection functions
CN112119505B (zh) * 2020-08-13 2023-03-17 英诺赛科（珠海）科技有限公司 半导体装置结构及其制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110233559A1 (en) * 2010-03-26 2011-09-29 Renesas Electronics Corporation Field-effect transistor
US20170125533A1 (en) * 2015-10-30 2017-05-04 Fujitsu Limited Semiconductor apparatus
CN109392218A (zh) * 2017-08-09 2019-02-26 富士电机株式会社 调光装置及电力变换装置
CN112840464A (zh) * 2021-01-12 2021-05-25 英诺赛科(苏州)半导体有限公司 半导体器件及其制造方法
CN113220060A (zh) * 2021-04-30 2021-08-06 深圳市国微电子有限公司 高电源抑制比的带隙基准电路和电子设备
CN115566061A (zh) * 2022-10-20 2023-01-03 英诺赛科(苏州)半导体有限公司 一种电子装置、电路及其制造方法

Also Published As

Publication number Publication date
CN115566061B (zh) 2024-01-02
CN115566061A (zh) 2023-01-03

Similar Documents

Publication Publication Date Title
US10326011B2 (en) Electronic device including a HEMT
US7019336B2 (en) Semiconductor device and method for manufacturing the same
WO2024083108A1 (fr) Dispositif électronique et procédé de fabrication associé, et circuit
JP2016171197A (ja) 半導体装置
JP7240480B6 (ja) エンハンスメント・モード及びデプレッション・モード・トランジスタの両者を有するモノリシック・マイクロ波集積回路
US9929261B2 (en) Electronic device including a HEMT with a segmented gate electrode
JP2016127082A (ja) 半導体装置および半導体装置の製造方法
JP2013105863A (ja) 電界効果トランジスタおよびその製造方法
US20220384418A1 (en) Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
CN114556561A (zh) 基于氮化物的半导体ic芯片及其制造方法
JP2017005139A (ja) トランジスタ
WO2023220872A1 (fr) Puce de circuit intégré à semi-conducteur à base de nitrure et son procédé de fabrication
CN115436770B (zh) 一种测试系统、调变电路及待测组件的测试方法
RU209181U1 (ru) Высоковольтный латеральный нитрид-галлиевый транзистор для малоиндуктивных каскодных схем
WO2024103247A1 (fr) Structure de dispositif à semi-conducteur et procédé de fabrication de celle-ci
TWI831770B (zh) 包括增強型hemt的電子裝置及其使用方法
CN115769379B (zh) 具有晶片级动态导通电阻监测能力的氮化物基电子装置
JP7417070B2 (ja) 半導体装置、半導体装置の製造方法及び電子装置
TWI834365B (zh) 半導體裝置
US11967642B2 (en) Semiconductor structure, high electron mobility transistor and fabrication method thereof
WO2024040514A1 (fr) Dispositif électronique à base de nitrure
JP2005101565A (ja) スイッチ用半導体装置及びスイッチ回路
CN115812253A (zh) 氮化物基半导体器件及其制造方法
CN117941075A (zh) 氮化物基半导体器件及其操作方法
JP2000077614A (ja) 電界効果型トランジスタ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23879096

Country of ref document: EP

Kind code of ref document: A1