WO2024082185A1 - Dispositif de mesure de contrainte de boîtier de puce, et procédé de mesure - Google Patents

Dispositif de mesure de contrainte de boîtier de puce, et procédé de mesure Download PDF

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Publication number
WO2024082185A1
WO2024082185A1 PCT/CN2022/126265 CN2022126265W WO2024082185A1 WO 2024082185 A1 WO2024082185 A1 WO 2024082185A1 CN 2022126265 W CN2022126265 W CN 2022126265W WO 2024082185 A1 WO2024082185 A1 WO 2024082185A1
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WIPO (PCT)
Prior art keywords
chip
tested
stress
measuring device
corrosion
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PCT/CN2022/126265
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English (en)
Chinese (zh)
Inventor
于子良
于博轩
刘昱
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中车工业研究院有限公司
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Priority to PCT/CN2022/126265 priority Critical patent/WO2024082185A1/fr
Publication of WO2024082185A1 publication Critical patent/WO2024082185A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/25—Measuring force or stress, in general using wave or particle radiation, e.g. X-rays, microwaves, neutrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Definitions

  • the present application relates to the field of chip technology, and in particular to a chip packaging stress detection device and a detection method.
  • Package stress is the internal stress generated when the temperature changes due to the different thermal expansion coefficients and Young's moduli of different packaging materials (chips, copper frames, silver pastes and plastic sealants) inside the semiconductor package.
  • This thermal-mechanical stress can cause delamination inside the semiconductor package and warping of the semiconductor package body. It can also cause the chip inside the semiconductor package to break and the solder joints of the wires to desolder, until the semiconductor device fails. Therefore, the detection and analysis of stress parameters is one of the keys to ensure chip reliability. Detecting stress at various locations on the chip and internal deep stress (including the collection of detailed stress measurement data) helps to understand the reliability of the packaging process, and is also conducive to the improvement of chip manufacturing processes and the analysis of quality problems.
  • chip packaging stress detection mostly involves pre-installing a piezoresistive sensor module on the chip to be tested. This method increases the structural design burden of the chip to be tested, increases manufacturing costs, and increases the risk of new problems. In addition, when testing stress in the depth direction of the chip to be tested by peeling, inaccurate positioning caused by manual movement will directly affect the accuracy of the test results and reduce the test efficiency.
  • the present application discloses a chip packaging stress detection device and detection method.
  • the detection device and detection method can make the detection result more accurate, reduce the operation time, improve the detection efficiency, and do not increase the burden of chip design, manufacturing cost and the risk of new problems.
  • the present application discloses a chip package stress detection device.
  • the chip package stress detection device includes a test bench, a first XYZ axis motion device, an X-ray measuring device, a host computer, a second XYZ axis motion device, a distance measuring device and a corrosion nozzle.
  • the test bench includes a conveying component, and the conveying component includes a carrier for carrying a chip to be tested and a chip substrate.
  • the chip substrate is detachably assembled on the carrier and the chip to be tested is located on the chip substrate.
  • the first XYZ axis motion device is installed on the test bench and is assembled with the X-ray measuring device.
  • the host computer controls the movement of the first XYZ axis motion device to adjust the distance between the X-ray measuring device and the chip to be tested; it is also connected to the X-ray measuring device to control the X-ray measuring device to measure the stress on the surface of the chip to be tested.
  • the second XYZ axis motion device is installed on the test bench and is located at both ends of the conveying component with the first XYZ axis motion device, and is assembled with the corrosion nozzle and the distance measuring device.
  • the host computer also controls the carrier of the conveying component to drive the chip substrate and the chip to be tested to move as a whole to the bottom of the etching nozzle, controls the etching nozzle to corrode the chip to be tested, and controls the etching nozzle to corrode the chip to be tested to a preset depth according to the current etching depth measured by the distance measuring device, and controls the corroded chip to be tested and the chip substrate to return, and controls the X-ray measuring device to measure the stress of the test point at the preset depth, and the above-mentioned etching process and the process of measuring stress by the X-ray measuring device are circulated until the stress measurement of all depth gradients is completed. The obtained measurement results are processed to complete the detection of the stress of the chip to be tested.
  • the first XYZ axis motion device includes a first Z-direction motion mechanism
  • the X-ray measuring device is installed on the first Z-direction motion mechanism and moves in the Z direction under the action of the first Z-direction motion mechanism.
  • the second XYZ axis motion device includes a second Z-direction motion mechanism.
  • the etching nozzle is installed on the second Z-direction motion mechanism and moves in the Z direction under the action of the second Z-direction motion mechanism.
  • the distance measuring device is provided with a plurality of laser heads.
  • the plurality of laser heads are evenly spaced in a horizontal plane to form a circle.
  • the chip to be measured is located at the center of the circle.
  • the host computer averages the values measured by all the laser heads to obtain the corrosion depth.
  • the second XYZ axis motion device includes a second Z-direction motion mechanism, and the distance measuring device is assembled in the second Z-direction motion mechanism and moves only in the XY directions.
  • a buffer pad is provided on the chip substrate, and a clamp is installed on the carrier of the test bench; the clamp at least applies a force to the buffer pad to clamp the chip substrate to the test bench.
  • the chip substrate is square, including adjacent first sides and adjacent second sides; positioning pieces are respectively arranged on the test bench corresponding to the first sides; and the clamps are pneumatic clamps respectively arranged corresponding to the second sides.
  • the host computer controls the pneumatic clamps to push the chip substrate against the positioning pieces, and then clamps the buffer pad to clamp the chip substrate to the test bench.
  • the chip package stress detection device includes a visual recognition device.
  • the visual recognition device is arranged on the second XYZ axis motion device to obtain an image of the corroded chip to be tested.
  • the host computer determines whether the corrosion depth is consistent based on the image and the depth value measured by the distance measuring device. If not, the corrosion nozzle is controlled to continue corrosion until the depth is consistent; if consistent, the corrosion nozzle is controlled to stop corrosion.
  • the conveying component includes a guide rail, and the guide rail includes multiple layers.
  • the test bench includes a first lifting platform for carrying the first XYZ-axis motion device and a second lifting platform for carrying the second XYZ-axis motion device. There are at least two sets of the carrier, the chip substrate, and the chip to be tested.
  • the first lifting platform and the second lifting platform each cooperate with the guide rails of the corresponding layer through lifting, so that the carrier, the chip substrate, and the chip to be tested are used as a whole to perform the stress measurement process and the corrosion process in an assembly line manner; or, the guide rail is annular, and there are at least two sets of the carrier, the chip substrate, and the chip to be tested, and the stress measurement process and the corrosion process are performed as a whole in an assembly line manner.
  • the chip package stress detection device includes a first communication module and a second communication module.
  • the first communication module is connected to the X-ray measurement device, the first XYZ axis motion device, the transmission component and the host computer.
  • the second communication module is connected to the distance measuring device, the second XYZ axis motion device, the etching nozzle and the host computer.
  • the present application also discloses a chip package stress detection method, which cooperates with a test device having an X-ray measuring device, an etching nozzle, a distance measuring device and a host computer to perform stress detection on the chip to be tested.
  • the method includes the following steps: the host computer controls the X-ray measuring device to emit X-rays to measure the stress on the surface of the chip to be tested; after completing the surface stress measurement, the host computer controls the etching nozzle to corrode the chip to be tested, and controls the etching nozzle to corrode the chip to be tested to a preset depth according to the current corrosion depth measured by the distance measuring device, controls the X-ray measuring device to measure the stress of the test point at the preset depth, and cycles the above-mentioned corrosion process and the process of measuring stress by the X-ray measuring device until the stress measurement of all depth gradients is completed. The obtained measurement results are processed to complete the detection of the stress of the chip to be tested.
  • the detection method includes: obtaining an image of the corroded chip to be tested through visual recognition; the host computer determines whether the corrosion depth is consistent based on the image and the depth value measured by the ranging device, and if not, controls the corrosion nozzle to continue corrosion until the depth is consistent; if consistent, controls the corrosion nozzle to stop corrosion.
  • the detection method includes: providing a multi-layer guide rail or a ring guide rail, and the host computer controls the chip to be tested to move in an assembly line manner at the corrosion station and the stress measurement station of the guide rail to realize the measurement process.
  • the host computer controls the movement of the first XYZ axis motion device, controls the chip to be tested to move between the etching nozzle and the first XYZ axis motion device, etches the chip to be tested by the etching nozzle, and controls the X-ray measuring device to detect the surface and internal stress of the chip to be tested.
  • the entire detection process is completed automatically, which reduces the operation time, improves the detection efficiency, and makes the entire detection process simple to operate and convenient for actual production application; furthermore, the detection device does not use a threshold piezoresistive sensor module, does not add burden to the structural design of the chip to be tested, does not increase the manufacturing cost and the risk of new problems, and does not make the chip to be tested itself complicated; finally, the host computer controls the etching nozzle to erode the chip to be tested and controls the depth of continued etching in combination with the measurement result of the distance measuring device. Compared with the stripping method, the measurement result will not be affected by inaccurate positioning caused by manual movement, and ultimately the stress detection has high accuracy and high detection efficiency.
  • FIG1 is a schematic diagram of a chip package stress detection device according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram showing the connection relationship between the host computer and the first XYZ axis motion device and the X-ray measuring device, and between the host computer and the second XYZ axis motion device, the corrosion nozzle and the distance measuring device according to an embodiment of the present application;
  • FIG3 is a schematic diagram showing the distribution of laser heads of a distance measuring device according to an embodiment of the present application.
  • FIG4 is a schematic diagram showing a pneumatic clamp cooperating with a positioning member to clamp a chip substrate according to an embodiment of the present application.
  • the chip to be tested is not shown in the figure;
  • FIG. 5 is a schematic diagram showing another transmission component of a chip package stress detection device according to an embodiment of the present application.
  • Words such as “include” or “comprise” mean that the elements or objects appearing in front of “include” or “comprise” include the elements or objects listed after “include” or “comprise” and their equivalents, and do not exclude other elements or objects. Words such as “connect” or “connected” are not limited to physical or mechanical connections, and can include electrical connections, whether direct or indirect.
  • the singular forms “a”, “said” and “the” used in this specification and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term “and/or” used herein refers to and includes any or all possible combinations of one or more of the associated listed items.
  • a chip package stress detection device includes a test bench 1, a first XYZ axis motion device 2, an X-ray measuring device 21, a host computer 3, a transmission component 4, a second XYZ axis motion device 5, a distance measuring device 92 and a corrosion nozzle 91.
  • the test bench 1 is used to fix a chip substrate 71 and a chip to be tested 72 located on the chip substrate 71.
  • the chip substrate 71 and the chip to be tested 72 can be fixedly mounted on the test bench 1 through a variety of structures, such as a fixture structure, etc.
  • the test bench 1 also serves as a bearing component for the first XYZ axis motion device 2, the X-ray measuring device 21, the transmission component 4, the second XYZ axis motion device 5, the corrosion nozzle 91 and the distance measuring device 92.
  • the host computer 3 can also be carried by the test bench 1.
  • the first XYZ axis motion device 2 is installed on the test bench 1, and is assembled with the X-ray measuring device 21.
  • the X-ray measuring device 21 adjusts the distance between the X-ray measuring device 21 and the chip to be tested 72 through the first XYZ axis motion device 2, that is, the first XYZ axis motion device 2 can make the X-ray measuring device 21 move in the XYZ direction.
  • this movement needs to be determined according to the current position between the X-ray measuring device 21 and the chip to be tested 72.
  • the X-ray measuring device 21 moves in the three directions of XYZ respectively to meet the distance requirement between the X-ray measuring device 21 and the chip to be tested 72.
  • the host computer 3 is connected to the X-ray measuring device 21, and controls the X-ray measuring device 21 to measure the stress on the surface of the chip to be tested 72.
  • the X-ray measuring device 21 emits X-rays to the surface of the chip to be tested 72 through an X-ray tube, and measures the stress on the surface of the chip to be tested 72 by measuring the diffraction angle (that is, measuring the stress by X-ray diffraction method). Based on the function of the X-ray measuring device, the structure of the X-ray measuring device 21 is not limited.
  • the conveying component 4 is assembled on the test bench 1, and is used to convey the chip substrate 71 and the chip to be tested 72 between the first XYZ axis motion device 2 and the second XYZ axis motion device 5, and includes a carrier 41.
  • the function of the carrier 41 is to carry the substrate to be tested 71 and the chip to be tested 72, so that they can move between the first XYZ axis motion device 2 and the second XYZ axis motion device 5, and its structure is not limited.
  • the structure of the conveying component 4 is not limited, for example, the conveying component 4 also includes components such as a guide rail 42 or a conveyor belt.
  • the carrier 41 can move on the guide rail 42 or the conveyor belt through components such as rollers to enable the chip to be tested 72 and the chip substrate 71 to move between the first XYZ axis motion device 2 and the second XYZ axis motion device 5.
  • the conveying component 4 it can realize that the chip to be tested 72 and the chip substrate 71 can move between the first XYZ axis motion device 2 and the second XYZ axis motion device 5 to complete the surface stress measurement and complete the internal stress measurement after being corroded.
  • the second XYZ axis motion device 5 is installed on the test bench 1, and is located at both ends of the conveying component 4 with the first XYZ axis motion device 2, and is assembled with the etching nozzle 91 and the distance measuring device 92.
  • the chip substrate 71 and the chip to be tested 72 are moved as a whole between the etching nozzle 91 and the first XYZ axis motion device 2 through the conveying component 4, and the specific movement process is described in detail in the working process of the chip stress packaging detection device.
  • Measuring the stress on the surface of the chip to be tested 72 After the chip to be tested 72 and the chip substrate 71 are fixed to the carrier 41 of the test bench 1, the position between the X-ray measuring device 21 and the chip to be tested 72 is adjusted.
  • the host computer 3 controls the first XYZ axis motion device 2 to move according to the position information of the point to be measured on the surface of the chip to be tested 72 to achieve the position adjustment, so as to ensure that the X-rays emitted by the X-ray measuring device 21 can irradiate the point to be tested.
  • the X-ray measuring device 21 is controlled to emit X-rays to the point to be tested on the surface of the chip to be tested 72 to obtain diffraction angle data (for example, the change value of the diffraction angle), etc.
  • the stress value of the surface of the chip to be tested 72 is obtained through these data, and the stress measurement of the surface of the chip to be tested 72 is completed.
  • Measuring the internal stress of the chip to be tested 72 After measuring the stress of the surface of the chip to be tested 72, the host computer 3 controls the conveying component 4 to convey the chip substrate 71 and the chip to be tested 72 to the bottom of the etching nozzle 91 through the carrier 41, and then controls the etching nozzle 91 to corrode the chip to be tested 72, and controls the etching nozzle 91 to corrode the chip to be tested 72 to a preset depth according to the current corrosion depth measured by the distance measuring device 92. The preset depth is set according to actual needs.
  • the host computer 3 controls the conveying component 4 so that the carrier 41 returns the chip substrate 71 and the corroded chip to be tested 72 to the first XYZ axis motion device 2.
  • the host computer 3 will control the first XYZ axis motion device 2 to move to adjust the positional relationship between the X-ray measuring device 21 and the corroded chip to be tested 72.
  • the host computer 3 controls the X-ray measuring device 21 to measure the stress of the test point at the preset depth, and cycles the above-mentioned corrosion process and the process of measuring stress by the X-ray measuring device 21 (here, the "cycle” only refers to the cycle of this process, and the parameters such as the depth of the chip 72 to be tested are still set according to the needs) until the stress measurement of all depth gradients is completed.
  • the obtained measurement results are processed to complete the stress detection of the chip to be tested.
  • the host computer 3 controls the movement of the first XYZ axis motion device 2, and controls the chip to be tested 72 to move between the etching nozzle 91 and the first XYZ axis motion device 2, and the etching nozzle 91 is used to etch the chip to be tested 72, and the X-ray measuring device 21 is controlled to measure the surface and internal stress of the chip to be tested 72, and the obtained measurement results are processed to complete the detection of the stress of the chip to be tested.
  • the entire detection process is completed automatically, which reduces the operation time, improves the detection efficiency, and makes the entire detection process simple to operate and convenient for actual production application; furthermore, the detection device does not use the threshold piezoresistive sensor module, which will not add burden to the structural design of the chip to be tested, nor will it make the chip to be tested itself complicated, and will not increase the manufacturing cost and the risk of new problems; finally, the host computer 3 controls the etching nozzle 91 to etch the chip to be tested 72 and controls the depth of continued etching in combination with the measurement result of the distance measuring device 92. Compared with the stripping method, the detection result will not be affected by inaccurate positioning caused by manual movement, and finally the stress detection is accurate and efficient.
  • the first XYZ axis motion device 2 includes a first Z-direction motion mechanism 22, and the X-ray measuring device 21 is installed on the first Z-direction motion mechanism 22, and moves in the Z direction under the action of the first Z-direction motion mechanism 22.
  • the first XYZ axis motion device 2 includes a first X-direction motion mechanism 23 and a first Y-direction motion mechanism 24.
  • the first X-direction motion mechanism 23, the first Z-direction motion mechanism 22 and the X-ray measuring device 21 as a whole can move in the Y direction under the action of the first Y-direction motion mechanism 24; the first Z-direction motion mechanism 22 and the X-ray measuring device 21 as a whole move in the X direction under the action of the first X-direction motion mechanism 23; the X-ray measuring device 21 moves in the Z direction under the action of the first Z-direction motion mechanism 22, and the position adjustment of the X-ray measuring device 21 in the XYZ direction is realized through the above control.
  • the first Z-axis motion mechanism 22, the first X-axis motion mechanism 23 and the first Y-axis motion mechanism 24 are all guide rail and slider structures, all composed of linear guides and linear servo motors, and equipped with guide rail clamps for braking control.
  • the strokes of the first X-axis motion mechanism 23 and the first Y-axis motion mechanism 24 are 300mm, and the stroke of the first Z-axis motion mechanism 22 is 200mm, and the positioning accuracy of each is 0.01mm.
  • the first Y-axis motion mechanism 24 has two sets, which are respectively installed on the pillars on both sides.
  • the first X-axis motion mechanism 23 has one set, which is installed on the first Y-axis motion mechanism 24.
  • the first Z-axis motion mechanism 22 has a set of slider guide rail mechanisms, which are installed on the first X-axis motion mechanism 23.
  • the X-ray measuring device 21 since the X-ray measuring device 21 is installed on the first Z-direction motion mechanism 22, it moves in the Z-direction under the action of the first Z-direction motion mechanism 22. In this way, the X-ray measuring device 21 can emit X-rays from top to bottom, so that the X-rays irradiate the chip to be tested 72, which is more convenient for X-rays to irradiate the test point.
  • the structure of the first XYZ-axis motion device 2 is simpler.
  • the second XYZ-axis motion device 5 includes a second Z-direction motion mechanism 51, a second X-direction motion mechanism 53, and a second Y-direction motion mechanism 54, wherein the second X-direction motion mechanism 53 is installed on the second Y-direction motion mechanism 54.
  • the second Z-direction motion mechanism 51 is installed on the second X-direction motion mechanism 53.
  • the corrosion nozzle 91 is installed on the second Z-direction motion mechanism 51, and moves in the Z direction under the action of the second Z-direction motion mechanism 51.
  • the structure of the second XYZ-axis motion device 5 can be the same as that of the first XYZ-axis motion device 2, or it can be different, as long as the position adjustment of the corrosion nozzle 91 in the XYZ direction can be achieved.
  • the etching nozzle 91 is installed on the second Z-axis motion mechanism 51, it is easier for the etching nozzle 91 to spray the etching liquid to corrode the chip to be tested 72. At the same time, because the etching nozzle 91 moves in the Z direction, compared with the etching nozzle 91 set in the X direction or the Y direction, the structure of the second XYZ axis motion device 5 is simpler.
  • the distance measuring device 92 is provided with a plurality of laser heads 921.
  • the plurality of laser heads 921 are evenly spaced in a horizontal plane to form a circle, and the chip to be measured 72 is located at the center of the circle.
  • the host computer averages the values measured by all the laser heads to obtain the depth of corrosion.
  • FIG. 3 schematically shows five laser heads 921, which form a circle.
  • the upper computer 3 averages the values measured by all the laser heads 921 to obtain the depth of corrosion, the measurement error caused by the uneven corrosion surface is corrected as much as possible by taking the average value, thereby improving the accuracy of corrosion and not affecting the measurement results due to inaccurate positioning caused by manual movement, ultimately making the stress measurement more accurate, for example, the depth of corrosion is consistent.
  • the second XYZ axis motion device 5 includes a second Z-direction motion mechanism 51 .
  • the distance measuring device 92 is assembled in the second Z-direction motion mechanism 51 and moves only in the XY directions.
  • the distance measuring device 92 since the distance measuring device 92 only moves in the XY direction and is installed on the second Z-direction motion mechanism 51, the distance measuring device 92 can be adjusted to any position above the chip to be measured 72 by moving in the XY direction, which makes it easier for the distance measuring device 92 assembled in the second Z-direction motion mechanism 51 to measure the depth. Furthermore, the distance measuring device 92 assembled in the second Z-direction motion mechanism 51 also makes it easier for the distance measuring device 92 to measure the corroded chip to be measured 72, and the measurement accuracy is high. For example, when the distance measuring device 92 is a laser distance measuring device, the laser emitted by the distance measuring device 92 irradiates the corroded part of the chip to be measured 72 from top to bottom, thereby achieving high accuracy.
  • a buffer pad 73 is provided on the chip substrate 71, and a clamp 43 is installed on the carrier 41 of the test bench 1.
  • the clamp 43 at least applies a force to the buffer pad 73 to clamp the chip substrate 71 to the test bench 1.
  • the at least applying a force to the buffer pad 73 includes the following two situations according to the different structures of the clamp 43: 1)
  • the clamp 43 includes an upper arm and a lower arm, the upper arm contacts the buffer pad 73, and the lower arm contacts the test bench 1, and the upper arm and the lower arm clamp the buffer pad 73, the chip substrate 71 and the corresponding part on the test bench 1; 2)
  • the clamp 43 includes a supporting arm, the buffer pad 73 is provided on the test bench 1, and the supporting arm presses the buffer pad 73 against the test bench 1, thereby clamping the chip substrate 71 to the test bench 1.
  • the buffer pad 73 can buffer and release the clamping force generated by the fixture 43, thereby preventing the clamping force from affecting the detection result and damaging the chip substrate 71.
  • the material of the buffer pad 73 is any material that can play a buffering role, for example, the buffer pad 73 is a rubber pad or a sponge pad.
  • the chip substrate 71 is square and includes adjacent first sides 711 and adjacent second sides 712.
  • the carrier 41 of the test bench 1 is provided with positioning members 44 corresponding to the first sides 711.
  • the clamp 43 is a pneumatic clamp respectively provided on the second sides 712.
  • the host computer 3 controls the pneumatic clamp to push the chip substrate 71 against the positioning member 44, and then clamps the buffer pad 73, thereby clamping the chip substrate 71 to the test bench 1.
  • the upper computer 3 controls the pneumatic clamp to push the chip substrate 71 to achieve positioning and then clamp the chip substrate 71.
  • the whole process is automated, which reduces the operation time and improves the test efficiency.
  • the chip substrate 71 is firmly clamped, which also helps to improve the accuracy of the test.
  • the automatic clamping by the clamp 43 can ensure the consistency of the clamping, which is also conducive to improving the accuracy of the test.
  • the chip package stress detection device further includes a visual recognition device.
  • the visual recognition device is disposed on the second XYZ axis motion device to obtain an image of the corroded chip to be tested.
  • the host computer determines whether the corrosion depth is consistent based on the image and the depth value measured by the distance measuring device. If not, the corrosion nozzle is controlled to continue to etch until the depth is consistent; if consistent, the corrosion nozzle is controlled to stop etching.
  • the visual recognition device can determine the situation of the corrosion area, and the distance measuring device 92 can obtain the depth of a certain point in the corrosion area. Therefore, the combination of the visual recognition device and the distance measuring device 92 realizes the combination of point and surface, and then, it can be known whether the depth of corrosion in the corrosion area is consistent. Compared with the method without using the visual recognition device, the number of times the distance measuring device 92 is adjusted can be reduced, and the test efficiency and test accuracy can be improved. Because when the visual recognition device is not used, the position of the distance measuring device 92 needs to be adjusted multiple times to obtain multiple depth values in the corrosion area, and then, the relationship between the multiple depth values is used to determine whether the corrosion depth is consistent.
  • the guide rail 42 of the conveying component 4 includes multiple layers.
  • the guide rail 42 includes an upper guide rail 421 and a lower guide rail 422 that are stacked, that is, only two layers of guide rails are illustrated.
  • the test bench 1 includes a first lifting platform 11 that carries the first XYZ-axis motion device 2 and a second lifting platform 12 that carries the second XYZ-axis motion device 5.
  • the first lifting platform 11 and the second lifting platform 12 each cooperate with the guide rails of the corresponding layer by lifting, so that the carrier 41 , the chip substrate 71 , and the chip to be tested 72 as a whole can perform the stress testing process and the corrosion process in an assembly line manner.
  • the above process is described as follows in conjunction with FIG5: After the surface stress measurement of the first chip to be tested 72 is completed at the highest position of the first lifting platform 11 (the first lifting platform 11 is indicated by a dotted line frame in FIG5 to be at the highest position, and the first lifting platform 11 is indicated by a solid line frame to be at the lowest position), the first lifting platform 11 descends so that the carrier 41, the chip substrate 71 and the first chip to be tested 72 can be transferred to the second lifting platform 12 by the lower guide rail 422.
  • the etching of the chip to be tested 72 can be performed when the second lifting platform 12 is at the lowest position or the highest position (the second lifting platform 12 is indicated by a dotted line frame in FIG5 to be at the highest position, and the second lifting platform is indicated by a solid line frame to be at the lowest position).
  • the first chip to be tested 72 returns to the first lifting platform 11 through the upper guide rail 421, and the cycle is repeated.
  • the first lifting platform 11 rises and can place the second chip to be tested 72 to measure the surface stress of the second chip to be tested 72. After the surface stress is measured, it is transported to the second lifting platform 12 for corrosion. This cycle allows the chip to be tested 72 to perform stress measurement in an assembly line manner.
  • the guide rail 42 may also be ring-shaped, and there are at least two sets of the carrier 41, the chip substrate 71 and the chip to be tested 72, and the stress measurement process and the corrosion process are performed in an assembly line manner as a whole.
  • the structure of the chip packaging stress detection device is also simple.
  • the chip package stress detection device includes a first communication module 31 and a second communication module 32.
  • the first communication module 31 is connected to the X-ray measuring device 21, the first XYZ axis motion device 2, the transmission component 4 and the host computer 3, so that the host computer 3 can control the X-ray measuring device 21, the first XYZ axis motion device 2 and the transmission component 4 through the first communication module 31.
  • the second communication module 32 is connected to the distance measuring device 92, the second XYZ axis motion device 5, the corrosion nozzle 91 and the host computer 3, so that the host computer 3 controls the distance measuring device 92, the second XYZ axis motion device 5 and the corrosion nozzle 91 through the second communication module 32.
  • the first communication module 31 and the second communication module 32 can be a module.
  • the host computer 3 controls the corresponding components through the first communication module 31 and the second communication module 32, it is convenient to wire to realize the connection between the distance measuring device 92 and the host computer 3.
  • the present application also discloses a chip packaging stress detection method, which uses a test device with an X-ray measurement device, an etching nozzle, a distance measuring device and a host computer to perform stress detection on the chip to be tested.
  • the method includes the following steps:
  • the host computer After completing the surface stress measurement, the host computer also controls the etching nozzle to corrode the chip to be tested, and controls the etching nozzle to corrode the chip to be tested to a preset depth according to the current etching depth measured by the distance measuring device, controls the X-ray measuring device to measure the stress of the test point at the preset depth, and repeats the above etching process and the process of measuring stress by the X-ray measuring device until the stress measurement of all depth gradients is completed, and processes the obtained measurement results to complete the detection of the stress of the chip to be tested.
  • the implementation process of the above method can refer to the description of the above detection device part. Its beneficial effects are the same as the beneficial effects of the above detection device and will not be repeated here.
  • the detection method includes: obtaining an image of the corroded chip to be tested through visual recognition; the host computer determines whether the corrosion depth is consistent based on the image and the depth value measured by the ranging device, and if not, controls the corrosion nozzle to continue corrosion until the depth is consistent; if consistent, controls the corrosion nozzle to stop corrosion, and its beneficial effects are the same as those of the aforementioned detection device and will not be repeated.
  • the detection method includes: setting up a multi-layer guide rail or a ring guide rail, and the host computer controls the chip to be tested to move in an assembly line manner at the corrosion station and the stress testing station of the guide rail to realize the measurement process. Its beneficial effects are the same as those of the aforementioned detection device and will not be repeated.

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Abstract

Dispositif de mesure de la contrainte de boîtier d'une puce, et procédé de mesure. Le dispositif de mesure de contrainte de boîtier d'une puce comprend une table de test (1), un premier dispositif de déplacement d'axe XYZ (2) monté sur la table de test (1), un dispositif de mesure de rayons X (21) assemblé sur le premier dispositif de déplacement d'axe XYZ (2), un ordinateur supérieur (3), un second dispositif de déplacement d'axe XYZ (5) monté sur la table de test (1), un dispositif de mesure de distance (92) et une tête de pulvérisation de gravure (91). L'ordinateur supérieur (3) commande le dispositif de mesure de rayons X (21) pour mesurer la contrainte sur la surface d'une puce à soumettre à une mesure (72) ; puis ladite puce est transmise, au moyen d'un composant de transmission (4), à la tête de pulvérisation de gravure (91) où ladite puce (72) est gravée ; ensuite, une contrainte interne de ladite puce est mesurée au moyen du dispositif de mesure de rayons X (21) ; et un processus de gravure et un processus de mesure de contrainte sont effectués de manière cyclique jusqu'à ce que la mesure de contrainte de tous les gradients de profondeur soit achevée. En utilisant le dispositif de mesure et le procédé de mesure, le résultat de mesure peut être plus précis, le temps de fonctionnement peut être réduit, l'efficacité de mesure peut être améliorée, et le dispositif et le procédé n'augmentent pas la difficulté de conception de puce, et n'amènent pas la puce elle-même à être complexe.
PCT/CN2022/126265 2022-10-19 2022-10-19 Dispositif de mesure de contrainte de boîtier de puce, et procédé de mesure WO2024082185A1 (fr)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163020A (ja) * 1997-11-28 1999-06-18 Matsushita Electric Works Ltd 半導体装置
JP2003315171A (ja) * 2002-04-26 2003-11-06 Toshiba Corp Ｘ線残留応力測定装置およびその方法
JP2015072171A (ja) * 2013-10-02 2015-04-16 三菱重工業株式会社 Ｘ線応力測定方法、及びｘ線応力測定装置
CN108375595A (zh) * 2018-02-27 2018-08-07 北京工商大学 金属工件表面应力沿深度方向分布的测试方法
JP2019132599A (ja) * 2018-01-29 2019-08-08 パルステック工業株式会社 搬送物の応力測定装置
CN110146204A (zh) * 2019-05-16 2019-08-20 广东镭奔激光科技有限公司 一种智能型残余应力x射线测量仪及其测量方法
US20200191670A1 (en) * 2018-12-18 2020-06-18 Metal Industries Research&Development Centre Residual stress detection device and detection method thereof
CN211348010U (zh) * 2019-09-19 2020-08-25 西安交通大学 基于单色x射线单晶应力测量的调节装置
CN114167255A (zh) * 2021-11-17 2022-03-11 中车工业研究院有限公司 集成电路盐雾腐蚀可靠性试验装置及控制方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163020A (ja) * 1997-11-28 1999-06-18 Matsushita Electric Works Ltd 半導体装置
JP2003315171A (ja) * 2002-04-26 2003-11-06 Toshiba Corp Ｘ線残留応力測定装置およびその方法
JP2015072171A (ja) * 2013-10-02 2015-04-16 三菱重工業株式会社 Ｘ線応力測定方法、及びｘ線応力測定装置
JP2019132599A (ja) * 2018-01-29 2019-08-08 パルステック工業株式会社 搬送物の応力測定装置
CN108375595A (zh) * 2018-02-27 2018-08-07 北京工商大学 金属工件表面应力沿深度方向分布的测试方法
US20200191670A1 (en) * 2018-12-18 2020-06-18 Metal Industries Research&Development Centre Residual stress detection device and detection method thereof
CN110146204A (zh) * 2019-05-16 2019-08-20 广东镭奔激光科技有限公司 一种智能型残余应力x射线测量仪及其测量方法
CN211348010U (zh) * 2019-09-19 2020-08-25 西安交通大学 基于单色x射线单晶应力测量的调节装置
CN114167255A (zh) * 2021-11-17 2022-03-11 中车工业研究院有限公司 集成电路盐雾腐蚀可靠性试验装置及控制方法

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