WO2024070685A1 - Procédé de formation de film, dispositif de formation de film et système de formation de film - Google Patents

Procédé de formation de film, dispositif de formation de film et système de formation de film Download PDF

Info

Publication number
WO2024070685A1
WO2024070685A1 PCT/JP2023/033332 JP2023033332W WO2024070685A1 WO 2024070685 A1 WO2024070685 A1 WO 2024070685A1 JP 2023033332 W JP2023033332 W JP 2023033332W WO 2024070685 A1 WO2024070685 A1 WO 2024070685A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
gas
ions
film formation
substrate
Prior art date
Application number
PCT/JP2023/033332
Other languages
English (en)
Japanese (ja)
Inventor
晋 山内
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2024070685A1 publication Critical patent/WO2024070685A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Definitions

  • This disclosure relates to a film formation method, a film formation apparatus, and a film formation system.
  • tungsten is used as a material to fill contact holes formed in substrates and via holes between wiring.
  • Molybdenum which has a high melting point like tungsten and is expected to further reduce resistance, is also being considered for use in a similar application.
  • Patent Document 1 discloses a technique for forming a molybdenum film by ALD or CVD using MoCl5 or MoO2Cl2 as a film-forming source gas.
  • Patent Document 2 discloses that a tungsten film or a molybdenum film is formed at a low temperature of 400°C or less by using an organic metal gas as the film-forming raw material gas.
  • the present disclosure provides a film formation method, a film formation apparatus, and a film formation system that can form a molybdenum or tungsten film with few impurities in the film at a low temperature with minimal damage to the underlying film.
  • a film formation method is a film formation method for forming a molybdenum film or a tungsten film, and includes the steps of preparing a substrate, forming a film containing molybdenum or tungsten on the substrate by ALD film formation using an organometallic source gas containing molybdenum or tungsten and a reactive gas, and performing a process of reacting ions with the film during or after the film formation.
  • the present disclosure provides a film formation method, a film formation apparatus, and a film formation system that can form a molybdenum or tungsten film with few impurities in the film at a low temperature with minimal damage to the underlying film.
  • FIG. 1 is a flowchart showing a flow of a film forming method according to an embodiment.
  • 1 is a timing chart showing an example of a sequence during ALD film formation using a metal-organic source gas and a reactive gas.
  • FIG. 13 is a diagram showing the results of a composition analysis in the depth direction of a film formed on a substrate by ALD deposition using an organic metal source gas and O 3 gas while Ar sputter etching the film.
  • 1 is a timing chart showing an example of a sequence in which Ar ion processing is performed during ALD film formation.
  • 13 is a timing chart showing another example of a sequence when Ar ion processing is performed during ALD film formation.
  • FIG. 1 is a cross-sectional view that illustrates a film formation apparatus as a first example of an apparatus for carrying out a film formation method according to an embodiment. An example of a sequence in which a process of Ar ion treatment is incorporated into an ALD cycle when forming a film using the film forming apparatus of FIG. 6 will be described.
  • FIG. 1 is a cross-sectional view that illustrates a film formation apparatus as a first example of an apparatus for carrying out a film formation method according to an embodiment.
  • FIG. 2 is a plan view showing a film formation system as a second example of an apparatus for carrying out a film formation method according to an embodiment of the present invention.
  • This figure shows the results of XPS composition analysis of the film surfaces of five samples formed by ALD film formation on a substrate using an organic metal source gas and O3 gas, and the results of XPS composition analysis of these samples after Ar ion sputtering to a depth of approximately 7 nm from the surface.
  • Patent Document 1 describes ALD film formation using MoCl5 or MoO2Cl2 as a film formation raw material and H2 gas as a reactive gas.
  • MoCl5 is used as a film formation raw material
  • H2 gas as a reactive gas.
  • MoCl5 is used as a film formation raw material
  • MoO2Cl2 is used as a film formation raw material gas
  • etching of the substrate (underlying) is suppressed, but about 20% of oxygen in the raw material remains in the film, and the film formation temperature is high at 500°C or more.
  • Patent Document 2 describes the formation of a tungsten film or a molybdenum film at a low temperature of 400° C. or less by using an organic metal source gas as a film-forming source gas and O 2 gas as a reactive gas.
  • an organic metal source gas as a film-forming source gas
  • O 2 gas as a reactive gas.
  • components containing carbon and oxygen may remain in the film as impurities. That is, the carbon and oxygen contained in the organic metal source gas, and the components containing oxygen and nitrogen contained in the reactive gas are contained in the film as impurities.
  • Patent Document 2 describes the reduction of the carbon component in the film by using an oxidizing agent, but does not describe a method for reducing the oxygen component or nitrogen component present as an impurity in the film.
  • the film can be formed at a low temperature with minimal damage to the base caused by chlorine, etc., and the process of reacting with ions provides energy to the film, reducing and reducing the oxide or nitride components that exist as impurities in the film.
  • FIG. 1 is a flowchart showing a flow of a film forming method according to an embodiment.
  • the film formation method according to this embodiment includes a step (ST1) of preparing a substrate, a step (ST2) of forming a film containing molybdenum or tungsten on the substrate by ALD using an organometallic source gas containing molybdenum or tungsten and a reactive gas, and a step (ST3) of performing a treatment to react ions with the formed film during or after the film formation step.
  • the substrate is not particularly limited, but may be a semiconductor substrate (semiconductor wafer).
  • the substrate may be a substrate having an insulating film formed on a base, and the insulating film may have a recess such as a trench or a hole formed therein.
  • an insulating film for example, a SiO2 film, formed on a silicon substrate may be used.
  • a barrier film such as a TiN film may be formed on the insulating film.
  • the organometallic source gas containing molybdenum or tungsten preferably contains a metal imide bond and/or a metal amide bond, and does not contain a metal-oxygen bond or a metal-halogen bond.
  • the metal-nitrogen bond constituting them has a relatively low bond energy, which is advantageous in that it is highly reactive.
  • the bond energy of a metal-oxygen bond or a metal-halogen bond is high, if the metal imide bond or the metal amide bond is contained, there is a disadvantage that the film formation temperature becomes high and oxygen tends to remain.
  • organometallic source gas one containing only a metal imide bond and/or a metal amide bond is more preferable.
  • organometallic source gas examples include ( tBuN ) 2Mo ( NMe2 ) 2 and ( tBuN ) 2Mo ( tBuNH ) 2 .
  • an oxygen-containing gas such as O3 gas or O2 gas, or a nitrogen-containing gas such as NH3 gas can be used.
  • an ALD cycle including (1) supplying the metalorganic source gas to the substrate, (2) purging the remaining metalorganic source gas, (3) supplying the reactive gas to the substrate, and (4) purging the remaining reactive gas is repeated multiple times.
  • the metalorganic source gas is supplied to the substrate and adsorbed to the substrate in a certain amount, and the adsorbed metalorganic source gas reacts with the reactive gas to form a unit film with a controlled thickness. Then, this cycle is repeated multiple times to obtain a film with a desired thickness.
  • a purge gas for purging the gas an inert gas such as N2 gas or a rare gas can be suitably used.
  • the purge gas may be constantly supplied during the ALD film formation.
  • low-temperature film formation for example, film formation at 400° C. or less
  • low-temperature film formation at 150° C. has been demonstrated in ALD film formation using the organic metal source gas ( tBuN ) 2 Mo (NMe 2 ) 2 gas and O 3 gas or O 2 gas
  • low-temperature film formation at 350° C. has also been demonstrated in ALD film formation using ( tBuN ) 2 Mo (NMe 2 ) 2 gas and NH 3 gas, and film formation at even lower temperatures is possible by optimizing the conditions.
  • a film containing molybdenum or tungsten is obtained.
  • these films are mainly composed of oxides, and when a nitrogen-containing gas is used as the reactive gas, they are mainly composed of nitrides.
  • the step of ST3 in which ions are allowed to act on the film is performed during or after the ALD film formation in ST2.
  • the ions are preferably rare gas ions (rare gas ions) such as He, Ne, and Ar, and more preferably Ar ions.
  • Ar ions are allowed to act on the film by generating a plasma of Ar gas in a chamber that contains the substrate, and applying a bias (e.g., a high-frequency bias) to the stage on which the substrate is placed to attract the Ar ions in the plasma to the substrate.
  • the temperature of this treatment is not particularly limited, and may be performed at room temperature or at the temperature for film formation.
  • the film during or after the film formation is reduced, and a metal molybdenum film or a metal tungsten film is obtained. That is, the oxides and nitrides in the film are reduced by the energy of the ions, and the oxygen or nitrogen components present as impurities in the film are reduced, resulting in a metal molybdenum film or a metal tungsten film with fewer impurities.
  • the molybdenum oxides e.g., MoO 3 , Mo 2 O 3
  • the reduction action by the treatment of acting with ions can reduce other impurity components such as carbon components.
  • Such an action of ST3 ions was found when ALD film formation was performed using an organic molybdenum source gas and O3 gas as a reactive gas, and then the resulting film was analyzed for its depth profile by XPS.
  • the composition is analyzed in the depth direction while Ar sputter etching is performed on the film from the surface.
  • a film was formed on a substrate having a SiO2 film formed on a Si substrate by ALD deposition using an organic metal source gas and O3 gas, and the film was subjected to Ar sputter etching while undergoing composition analysis in the depth direction.
  • the results are shown in Figure 3. This figure can also be understood as showing the composition when Ar ions are applied at each point in the ALD cycle.
  • a process of treating with ions is carried out during or after the formation of a film containing molybdenum or tungsten on a substrate by ALD using an organometallic source gas (ST2), to obtain a metallic molybdenum film or metallic tungsten film.
  • the process of reacting with ST3 ions is performed on the film obtained by using an oxygen-containing gas as a reactive gas and the film obtained by using a nitrogen-containing gas as a reactive gas.
  • the film produced by using a nitrogen-containing gas is mainly composed of nitride (MoN), while the film produced by using an oxygen-containing gas is mainly composed of oxide (MoO 3 ), but the nitride has a smaller oxidation number than the oxide. Therefore, during the process of reacting with ST3 ions, the film formed by using a nitrogen-containing gas as a reactive gas can be more easily reduced to metal.
  • the ion-induced treatment is appropriately set under conditions so that ion energy is obtained so as to exert a desired reduction effect.
  • the treatment may be performed under conditions so that the film obtained by ALD film formation is sputtered (etched) and removed by ions, but it is also possible to perform the treatment under conditions so that the film is not sputtered and only energy is applied to the film if a desired reduction effect is exerted.
  • Such conditions of only applying energy are more advantageous because they do not involve etching of the film.
  • the ion energy since the amount of Ar sputtering when analyzing the depth profile in XPS is about 0.3 A/s in terms of SiO2 , it is preferable to set the energy to be equal to or less than the energy at that time.
  • the ion-reacting process in ST3 may be performed during or after ALD film formation.
  • the film to be formed is thin, the film can be sufficiently reduced by performing the ion-reacting process after ALD film formation.
  • performing the ion-reacting process after ALD film formation requires a long processing time and may result in insufficient reduction.
  • the ion energy can be applied to a thinner film than when performing the ion-reacting process after ALD film formation, so the film reduction effect is high and the processing time can be short. For this reason, performing the ion-reacting process during film formation is advantageous when forming a thick film.
  • the timing of Ar ion treatment is arbitrary.
  • ALD film formation and ion treatment may be repeated multiple times, or ion treatment may be incorporated into the ALD cycle.
  • ALD film formation and the process of reacting with ions are repeated multiple times, for example, it is performed as shown in FIG. 4. That is, after performing the ALD cycle consisting of (1) supplying metalorganic precursor gas, (2) purging residual gas, (3) supplying reactive gas, and (4) purging residual gas a desired number of times, (5) a process of reacting with ions (ion treatment) and (6) purging residual gas are performed, and this sequence is repeated until the desired film thickness is reached.
  • the ALD cycle consisting of (1) supply of metalorganic precursor gas, (2) purging of residual gas, (3) supply of reactive gas, (4) purging of residual gas, (5) treatment using ions, and (6) purging of residual gas is repeated until the desired film thickness is achieved.
  • purge gas may be supplied continuously during processing.
  • the ion treatment is carried out during ALD film formation, especially when it is incorporated into the ALD cycle, it is preferable to carry out the film formation process in ST2 and the Ar ion treatment process in ST3 in the same equipment. If they are carried out in the same equipment, it is preferable to carry out the ion treatment at the same temperature as the film formation process.
  • ALD film formation is performed using an organometallic precursor gas as the film formation raw material gas, so that the damage to the base due to chlorine and the like is small and the film can be formed at a low temperature.
  • an organometallic precursor gas as the film formation raw material gas
  • energy can be imparted to the film to reduce oxides or nitrides present in the film, thereby reducing impurity components.
  • the reduction effect of the process in which ions are allowed to act can also remove carbon components and the like contained as impurities in the film.
  • FIG. 6 is a cross-sectional view showing a first example of an apparatus for carrying out the film forming method of the present embodiment, which is configured as a film forming apparatus 100 capable of carrying out both the film forming step ST2 and the Ar ion processing step ST3 described above.
  • This film forming apparatus 100 has a metallic chamber 1 that is roughly cylindrical.
  • An exhaust pipe 11 is connected to the bottom of the chamber 1, and this exhaust pipe 11 is provided with an exhaust mechanism 12 that has an automatic pressure control valve for controlling the pressure inside the chamber 1 and a vacuum pump for evacuating the chamber 1.
  • This exhaust mechanism 12 makes it possible to evacuate the chamber 1 and control the pressure to the desired level.
  • the side wall of the chamber 1 is provided with a loading/unloading port 13 for loading/unloading the substrate W between the chamber 1 and a substrate transfer chamber (not shown) provided adjacent to the chamber 1, and a gate valve 14 for opening/closing the loading/unloading port 13.
  • a mounting table 2 is provided for horizontally supporting the substrate W.
  • the mounting table 2 is supported at the center of the bottom wall of the chamber 1 via a cylindrical insulating member 3, and a hole 1a corresponding to the insulating member 3 is formed in the bottom wall.
  • the mounting table 2 functions as a lower electrode.
  • the mounting table 2 may be made of metal or ceramics, and if it is made of ceramics, an electrode plate is provided within it.
  • a heater 18 for heating the wafer W is provided inside the mounting table 2.
  • a high-frequency power supply 16 is connected to the mounting table 2 via a matching unit 15.
  • the high-frequency power supply 16 functions as an ion processing mechanism.
  • the high-frequency power supply 16 is provided below the chamber 1, and a power supply line 17 from the high-frequency power supply 16 is connected to the mounting table 2 via a hole 1a in the chamber 1 and the internal space of the insulating member 3.
  • the mounting table 2 is provided with multiple wafer support pins (not shown) for supporting and raising and lowering the wafer W, which can be protruded and retracted from the surface of the mounting table 2.
  • a circular hole is formed in the ceiling wall 1b of the chamber 1, and a disk-shaped shower head 20 that functions as an upper electrode is fitted into the hole.
  • the shower head 20 is grounded via the chamber 1.
  • the shower head 20 has a base member 21 and a shower plate 22.
  • a gas diffusion space 23 is formed between the base member 21 and the shower plate 22.
  • the shower plate 22 has a plurality of gas discharge holes 24 that penetrate from the gas diffusion space 23 to the inside of the chamber 1.
  • a gas introduction hole 25 is formed in the center of the base member 21 so as to penetrate into the gas diffusion space 23.
  • a common pipe 31 of the gas supply mechanism 30 is connected to the gas introduction hole 25, so that gas from the gas supply mechanism 30 is discharged into the chamber 1 via the shower head 20.
  • high-frequency power is applied from the high-frequency power supply 16 to the lower electrode, the mounting table 2, forming a high-frequency electric field between the upper electrode, the shower head 20, and the lower electrode, the mounting table 2, generating Ar plasma.
  • the high-frequency power supply 16 also has the function of applying a high-frequency bias, drawing Ar ions in the Ar plasma to the substrate W on the mounting table 2.
  • the gas supply mechanism 30 has an MO source gas supply source 41 that supplies an organic metal source gas (MO source gas), an O 3 gas supply source 42 that supplies O 3 gas as a reactive gas, a first N 2 gas supply source 43 and a second N 2 gas supply source 44 that supply N 2 gas as a purge gas, and an Ar gas supply source 45 that supplies Ar gas.
  • the MO source gas is an organic molybdenum source gas or an organic tungsten source gas, and may be a liquid or solid source. In that case, it is vaporized in a container and transported by a carrier gas such as N 2 gas.
  • the reactive gas is not limited to O 3 gas, but may be other oxygen-containing gas such as O 2 gas or a nitrogen-containing gas such as NH 3 gas.
  • the purge gas may be an inert gas other than N 2 gas.
  • the first pipe 47 is connected to the MO raw material gas supply source 41, the second pipe 48 is connected to the O 3 gas supply source 48, the third pipe 49 is connected to the first N 2 gas supply source 43, the fourth pipe 50 is connected to the second N 2 gas supply source 44, and the fifth pipe 51 is connected to the Ar gas supply source 45.
  • the third pipe 49 and the fourth pipe 50 are provided on the first pipe 47 side and the second pipe 48 side, respectively.
  • the N 2 gas flowing from the first N 2 gas supply source 43 through the third pipe 49 also functions as a carrier gas for the MO raw material gas, and the N 2 gas flowing from the second N 2 gas supply source 44 through the third pipe 50 also functions as a carrier gas for the O 3 gas.
  • the other ends of the first to fifth pipes 47 to 51 are connected to the common pipe 31.
  • the first to fifth pipes 47 to 51 are provided with high-speed valves 52, 53, 54, 55, and 56, respectively.
  • the flow rates of the gases flowing through the first to fifth pipes 47 to 51 are controlled by flow rate controllers (not
  • the film forming apparatus 100 has a control unit 60.
  • the control unit 60 is made up of a computer and has a main control unit with a CPU that controls each component of the film forming apparatus 100.
  • the control unit 60 also has an input device, an output device, a display device, and a storage device (storage medium).
  • the components to be controlled are, for example, the heater power supply, the exhaust mechanism 12, the valves and flow rate controllers of the gas supply mechanism 30, the high frequency power supply 16, etc.
  • the main control unit of the control unit 60 causes the film forming apparatus 100 to perform a predetermined operation based on, for example, a processing recipe stored in the storage medium of the storage device.
  • the film formation apparatus 100 configured as described above performs a film formation method based on a process recipe set in the control unit 60.
  • the film formation method includes a process of preparing a substrate, a process of forming a film containing molybdenum or tungsten by ALD using an MO raw material gas and a reactive gas, and a process of performing a process of reacting ions during or after film formation. Since the film formation apparatus 100 is equipped with a high-frequency power supply 16 for performing a process of reacting Ar ions, a sequence for performing a process of reacting ions during ALD film formation can be easily realized, and further, the process of reacting ions can be easily incorporated into the ALD cycle.
  • the substrate W is carried into the chamber 1 and placed on the mounting table 2.
  • the mounting table 2 is set to the desired temperature, preferably 400°C or less, by the heater 18.
  • the processing recipe is started.
  • the chamber 1 is evacuated and purged, and then the pressure is increased to the processing pressure to stabilize the temperature of the substrate W.
  • an ALD cycle is performed that incorporates a process of performing a process in which ions are reacted with the ALD film formed using the MO source gas and reactive gas.
  • the ALD cycle consists of (1) supply of MO source gas, (2) purging of residual gas, (3) supply of O3 gas, (4) purging of residual gas, (5) treatment with Ar ions (Ar ion treatment), and (6) purging of residual gas. This ALD cycle is repeated until the desired film thickness is reached.
  • the MO source is vaporized as necessary, and the MO source gas is supplied into the chamber 1 and adsorbed onto the surface of the substrate W.
  • the chamber 1 is evacuated while N2 gas, which is a purge gas, is supplied into the chamber 1, and the residual gas is discharged from the chamber 1.
  • the reactive gas O3 gas is supplied into the chamber 1 and reacted with the MO source gas adsorbed onto the surface of the substrate W to obtain a unit film.
  • the chamber 1 is purged with N2 gas, as in (2).
  • the ALD cycle consisting of steps (1) to (6) is repeated until a film having a desired thickness is formed.
  • N2 gas may be supplied continuously during the process.
  • This film forming system 200 has a vacuum processing section 300, an atmospheric transfer section 400, an airlock section 500, and a control section 600.
  • the vacuum processing unit 300 has a vacuum transfer chamber 301, a film forming device 302, an Ar ion processing device 303, and a film quality checking device 304.
  • the film forming device 302, the Ar ion processing device 303, and the film quality checking device 304 are connected to the wall of the vacuum transfer chamber 301 via a gate valve G. Note that while the figure shows two film forming devices 302, there may be only one film forming device 302.
  • the film formation apparatus 302 has a configuration in which the high frequency power supply 16 and the matching box 15 are removed from the film formation apparatus 100, and performs only ALD film formation without performing any ion-induced processing.
  • the Ar ion processing device 303 does not perform ALD film formation, but instead supplies only Ar gas into the chamber. Like the film formation device 100, it is configured to connect a high-frequency power source to the mounting table to generate Ar plasma in the chamber and draw Ar ions into the substrate, causing the Ar ions to act on the film formed on the substrate.
  • the film quality confirmation device 304 analyzes the film composition, for example, by XPS, and confirms whether the film composition is as desired.
  • the film quality confirmation device 304 is not essential and does not have to be provided.
  • a first substrate transfer mechanism 310 is provided in the vacuum transfer chamber 301.
  • the first substrate transfer mechanism 310 transfers substrates W to and from the film forming device 302, the Ar ion processing device 303, the film quality checking device 304, and the airlock section 500.
  • the first substrate transfer mechanism 310 has two transfer arms 310a and 310b that can move independently.
  • the atmospheric transfer section 400 has an atmospheric transfer chamber 401.
  • Three carrier attachment ports 402 are provided on the wall of the atmospheric transfer chamber 401 opposite the vacuum processing section 300 to attach carriers C, such as FOUPs, that house substrates W.
  • a second substrate transfer mechanism 410 is provided within the atmospheric transfer chamber 401. The second substrate transfer mechanism 410 transfers substrates W to and from the carriers C and the airlock section 500.
  • the airlock unit 500 is provided between the vacuum processing unit 300 and the atmospheric transfer unit 400, and enables the transfer of the substrate W between the vacuum transfer chamber 301 and the atmospheric transfer chamber 401 by controlling the pressure between atmospheric pressure and vacuum.
  • the airlock unit 500 has multiple airlock chambers whose pressure can be adjusted between atmospheric pressure and vacuum, and the airlock chambers are connected to the vacuum transfer chamber 301 and the atmospheric transfer chamber 401 via gate valves.
  • the film formation system 200 of this example is configured to perform film formation processing and Ar ion processing on the substrate in-situ.
  • the control unit 600 has a main control unit with a CPU (computer), an input device, an output device, a display device, and a storage device.
  • the main control unit controls, for example, substrate processing in the film formation device 302, the Ar ion processing device 303, and the film quality checking device 304, the vacuum exhaust mechanism and gas supply mechanism of these devices and the vacuum transfer chamber 301, pressure control of the airlock unit 500, opening and closing control of the gate valve G, etc.
  • the main control unit also causes the film formation system 200 to perform a predetermined operation based on a processing recipe stored in a storage medium built into the storage device or a storage medium set in the storage device.
  • the carrier C containing multiple substrates W is connected to the carrier attachment port 402 of the atmospheric transfer chamber 401, and the second substrate transfer mechanism 410 removes the substrates from the carrier C.
  • the substrates are then transferred to the airlock chamber of the airlock section 500, and the airlock chamber is evacuated.
  • the substrates in the evacuated airlock chamber are then transported to the film formation device 302 by the first substrate transfer mechanism 310, and a film mainly made of molybdenum oxide or tungsten oxide is formed by ALD film formation.
  • the substrate W is removed by the substrate transfer device 310 and transported to the Ar ion treatment device 303, where Ar ions are applied to the film formed on the substrate W.
  • the substrate W is transported to the film quality confirmation device 304 as necessary to confirm the film quality. If the substrate W is halfway formed and Ar ion treatment is performed, the treatment in the film formation device 302 and the treatment in the Ar ion treatment device 303 are repeated multiple times. After processing, the substrate W is returned to the carrier C via the airlock 500.
  • the above-mentioned processing is carried out simultaneously in parallel for multiple substrates W until processing is completed for the number of substrates loaded on the carrier C.
  • the film formation process and the process of reacting with Ar ions are performed in situ without breaking the vacuum, but these can also be performed ex situ.
  • the film formation process can be performed in a batch-type device, for example a vertical film formation device. This allows the film formation process to be performed with high throughput.
  • the process of reacting with Ar ions is limited to after the ALD film formation.
  • Ar ions are mainly used as the ion-reactive process, but ions other than Ar may be used as long as they have the desired reducing effect on the ALD-deposited film.
  • they are ions of rare gases such as He, Ne, and Ar.
  • FIG. 6 is shown as an example, but FIG. 6 is merely schematic, and various configurations capable of ALD deposition can be used. The same applies to the deposition system shown in FIG. 8.
  • chamber, 2 mounting table, 12; exhaust mechanism, 16; high frequency power source, 18; heater, 20; shower head, 30; gas supply mechanism, 60; control unit, 100; film forming device, 200; film forming system, 300; vacuum processing unit, 301; vacuum transfer chamber, 302; film forming device, 303; Ar ion processing device, 304; film quality confirmation device, 400; atmospheric transfer unit, 500; air lock unit, W; substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Ce procédé de formation de film pour former un film de molybdène ou un film de tungstène comprend : la préparation d'un substrat ; la formation d'un film contenant du molybdène ou du tungstène sur le substrat au moyen d'ALD à l'aide d'un gaz source organométallique contenant du molybdène ou du tungstène et un gaz réactif ; et la réalisation d'un traitement dans lequel des ions sont amenés à agir sur le film pendant ou après la formation de film.
PCT/JP2023/033332 2022-09-27 2023-09-13 Procédé de formation de film, dispositif de formation de film et système de formation de film WO2024070685A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022153314A JP2024047686A (ja) 2022-09-27 2022-09-27 成膜方法、成膜装置、および成膜システム
JP2022-153314 2022-09-27

Publications (1)

Publication Number Publication Date
WO2024070685A1 true WO2024070685A1 (fr) 2024-04-04

Family

ID=90477613

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/033332 WO2024070685A1 (fr) 2022-09-27 2023-09-13 Procédé de formation de film, dispositif de formation de film et système de formation de film

Country Status (2)

Country Link
JP (1) JP2024047686A (fr)
WO (1) WO2024070685A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006028572A (ja) * 2004-07-14 2006-02-02 Ulvac Japan Ltd 薄膜形成方法
JP2007523994A (ja) * 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド バリヤ物質の原子層堆積
JP2010504999A (ja) * 2006-09-28 2010-02-18 プラクスエア・テクノロジー・インコーポレイテッド 有機金属前駆体化合物
WO2021035236A1 (fr) * 2019-08-22 2021-02-25 Lam Research Corporation Films contenant du molybdène et du tungstène sensiblement exempts de carbone dans la fabrication de dispositifs à semi-conducteurs

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007523994A (ja) * 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド バリヤ物質の原子層堆積
JP2006028572A (ja) * 2004-07-14 2006-02-02 Ulvac Japan Ltd 薄膜形成方法
JP2010504999A (ja) * 2006-09-28 2010-02-18 プラクスエア・テクノロジー・インコーポレイテッド 有機金属前駆体化合物
WO2021035236A1 (fr) * 2019-08-22 2021-02-25 Lam Research Corporation Films contenant du molybdène et du tungstène sensiblement exempts de carbone dans la fabrication de dispositifs à semi-conducteurs

Also Published As

Publication number Publication date
JP2024047686A (ja) 2024-04-08

Similar Documents

Publication Publication Date Title
US10319582B2 (en) Methods and apparatus for depositing silicon oxide on metal layers
KR100447284B1 (ko) 화학기상증착 챔버의 세정 방법
TWI816676B (zh) 用於達成無缺陷自組裝單層的晶圓處理
JP5207615B2 (ja) 成膜方法および基板処理装置
JP5046506B2 (ja) 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
US7695563B2 (en) Pulsed deposition process for tungsten nucleation
JP5097554B2 (ja) 半導体装置の製造方法、基板処理方法および基板処理装置
KR20170037538A (ko) TiON막의 성막 방법
JP2017069313A (ja) 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
CN110581067A (zh) 蚀刻方法及蚀刻装置
WO2020016914A1 (fr) Procédé de fabrication de dispositif à semi-conducteurs, dispositif de traitement de substrat et programme
TWI796388B (zh) 減少或消除鎢膜中缺陷的方法
TWI821661B (zh) 金屬阻障層之摻雜
WO2010087362A1 (fr) Procédé de formation de film, et appareil de formation de film par plasma
CN108701599B (zh) 基板处理方法
CN110783188A (zh) 蚀刻方法和蚀刻装置
WO2010001931A1 (fr) Procédé permettant de former des couches minces et appareil permettant de former des couches minces
JP6391355B2 (ja) タングステン膜の成膜方法
WO2024070685A1 (fr) Procédé de formation de film, dispositif de formation de film et système de formation de film
KR101393898B1 (ko) 니켈막의 성막 방법
KR101941766B1 (ko) 기판 처리 방법 및 기억 매체
US20220157600A1 (en) Film forming method, method for manufacturing semiconductor device, film forming device, and system for manufacturing semiconductor device
JP2009049217A (ja) 半導体デバイスの製造方法。

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23871918

Country of ref document: EP

Kind code of ref document: A1