WO2024060937A1 - Cellule solaire et son procédé de fabrication - Google Patents

Cellule solaire et son procédé de fabrication Download PDF

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Publication number
WO2024060937A1
WO2024060937A1 PCT/CN2023/115249 CN2023115249W WO2024060937A1 WO 2024060937 A1 WO2024060937 A1 WO 2024060937A1 CN 2023115249 W CN2023115249 W CN 2023115249W WO 2024060937 A1 WO2024060937 A1 WO 2024060937A1
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copper
layer
solar cell
cell according
mixed layer
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PCT/CN2023/115249
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English (en)
Chinese (zh)
Inventor
薛建锋
廖劼
苏世杰
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通威太阳能（成都）有限公司
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Publication of WO2024060937A1 publication Critical patent/WO2024060937A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table

Definitions

  • the present application relates to the technical field of solar cells, specifically, to a solar cell and a preparation method thereof.
  • the existing preparation method of copper electroplated heterojunction cells includes the following steps: first, texturing and cleaning the N-type monocrystalline silicon wafer, and then depositing intrinsic amorphous silicon and N-type amorphous silicon films on the front side of the silicon wafer, and Deposit intrinsic amorphous silicon and P-type amorphous silicon films on the back of the silicon wafer, then plate a transparent conductive film, that is, TCO conductive layer, on the amorphous silicon.
  • TCO conductive layer a transparent conductive film
  • a copper seed layer on the transparent conductive film to complete the semi-finished product of seed layer deposition. It is called a yellow film. It takes advantage of the good conductivity of the copper seed layer to grow copper grid lines in the electroplating solution.
  • a layer of metal tin is plated on the copper grid lines to protect the copper grid lines.
  • the copper grid wires grown in the electroplating solution have irregular shapes and have problems such as burrs on the surface.
  • the bonding force between the copper grid wires and the copper seed layer is poor, causing the copper grid wires to fail the tensile test.
  • the present application provides a solar cell and a preparation method thereof, which can form a copper grid line with a regular shape and less burrs, and improve the bonding force between the copper grid line and the copper seed layer.
  • the example of this application provides a method for preparing a solar cell, which includes: depositing a copper seed layer on both the front and back surfaces of the semi-finished battery to form a mixed layer, where the mixed layer is a mixture of copper and copper oxide, and Before electroplating, the copper oxide in the mixed layer in some areas is removed, and copper gate lines are formed by electroplating.
  • the mass proportion of copper oxide in the mixed layer is 30wt% to 80wt%.
  • the semi-finished product of the battery consists of copper seed layer, conductive layer, P-type doping layer, and this layer along the thickness direction from the back to the front. It consists of an amorphous silicon layer, a silicon layer, an intrinsic amorphous silicon layer, an N-type doped layer, a conductive layer and a copper seed layer.
  • the solar cell preparation method of the present application forms a mixed layer by depositing on the surface of the seed layer, and removes the copper oxide in the mixed layer in some areas before electroplating, so that a hollow copper film is left on the surface of the copper seed layer. Then the gaps are filled through electroplating and gradually grow into copper gate lines, so that the entire copper gate lines and copper seed layer achieve a better combination to achieve low contact resistance.
  • forming a mixed layer containing copper oxide on the surface of the copper seed layer can reduce or avoid oxidation of the copper seed layer during storage, making the formed copper gate lines neat in shape and with fewer burrs.
  • the presence of copper oxide can also extend the storage time of yellow film tablets.
  • a method for removing copper oxide in a partial area of the mixed layer includes: cleaning the exposed mixed layer with a weak acid solution to dissolve the copper oxide.
  • the weak acid solution includes any one or more of hydrochloric acid solution, sulfuric acid solution, acetic acid solution and oxalic acid solution.
  • copper oxide can be dissolved in a weak acid solution, but elemental copper cannot be dissolved in a weak acid solution, leaving a hollow copper film on the surface of the copper seed layer.
  • the process of depositing the copper seed layer on both the front and back surfaces of the battery semi-finished product to form a mixed layer is performed in an oxygen-free environment.
  • a photosensitive resin is set on the top surface of the mixed layer on the front side and the bottom surface of the mixed layer on the back side, and after laser printing and development, the mixed layer in the preset graphic area is exposed, and then the copper oxide in the exposed mixed layer is removed.
  • the pattern of the copper grid lines can be formed on the photoresist by laser printing, and then the mixed layer in the preset pattern area is exposed through development, and the exposed part of the pattern is the reserved copper grid line. Pattern, after removing the copper oxide in the exposed mixed layer, a copper gate line with a preset pattern can be formed.
  • the above-mentioned laser printing method includes: printing a preset raster line pattern onto the photosensitive adhesive by laser, so that the portion of the photosensitive adhesive printed by the laser transsexual.
  • the structure of the photoresist changes after being exposed to light, so that it can be dissolved in the developer.
  • the above-mentioned developing method includes: using a developer to dissolve and remove part of the photosensitive resin that has been denatured by laser printing.
  • the photoresist after being exposed to light can be dissolved in the developer to form a laser-printed pattern.
  • an edge-encapsulating adhesive is first provided on the side of the mixed layer for covering.
  • the width of the edge wrapping glue is ⁇ 50 ⁇ m, and the thickness of the edge wrapping glue is 10 ⁇ m to 15 ⁇ m.
  • the edge encapsulant protects the sides of the hybrid layer to prevent copper gate lines from being electroplated on the sides of the hybrid layer.
  • the above-mentioned electroplating includes first performing a first electroplating in a copper sulfate solution to form a copper gate line, and then performing the first electroplating in a tin methane sulfonate solution.
  • the second electroplating forms the tin grid lines.
  • the height of the formed copper gate line is 8 ⁇ m to 10 ⁇ m.
  • the height of the formed tin grid line is 2 ⁇ m to 4 ⁇ m.
  • a light injection process is performed after electroplating is completed.
  • the temperature of the light injection process is 200°C to 220°C.
  • the time of the light injection process is 60s to 120s.
  • the example of this application provides a solar cell, which is produced according to the above-mentioned solar cell preparation method.
  • the copper grid wire and the copper seed layer of the solar cell of the present application are firmly combined, the contact resistance is low, and the copper grid wire has a neat shape and fewer burrs.
  • Figure 1 is a schematic structural diagram of a semi-finished battery product according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a solar cell according to an embodiment of the present application.
  • Figure 3 is an enlarged cross-sectional view of the grid line of the solar cell according to Embodiment 1 of the present application;
  • FIG. 4 is an enlarged cross-sectional view of the grid lines of the solar cell in Comparative Example 1 of the present application.
  • the copper on the surface of the yellow diaphragm is a single copper deposited by magnetron sputtering.
  • Single copper can easily react with water vapor, oxygen, hydrogen sulfide and other oxidizing substances in the environment to generate copper oxide or copper carbonate. If copper is electroplated directly on the yellow diaphragm later, the copper oxide will have a weaker conductivity than single copper and the copper on the surface of the yellow diaphragm will have an uneven morphology and burrs on the surface of the copper grid.
  • the inventors further found that the crystal shape of the copper grid grown on single copper is different from that of the copper grid grown on copper oxide. Due to the different conductivity of the two, the grain size of the copper grid grown on copper oxide is smaller, which will affect the bonding between the copper grid and the seed layer. At the same time, after the yellow film is slightly oxidized, the oxidation problem will continue to worsen until the entire copper seed layer is oxidized, that is, the storage time of the yellow film will be limited. The copper oxide formed after the yellow film is oxidized appears black, and the surface structure is looser than copper.
  • the inventor in order to improve the technical problem that the elemental copper on the surface of the yellow film sheet is easily oxidized, resulting in poor bonding force between the copper gate line and the copper seed layer, the inventor has designed a method for preparing solar cells after in-depth research.
  • the surface of the seed layer is deposited to form a mixed layer, and the copper oxide in some areas of the mixed layer is removed before electroplating, leaving a hollow copper film on the surface of the copper seed layer.
  • the gaps are then filled by electroplating, and gradually grow into copper gate lines, making the entire The copper gate line and copper seed layer achieve a better combination to achieve low contact resistance.
  • forming a mixed layer containing copper oxide on the surface of the copper seed layer can reduce or avoid oxidation of the copper seed layer during storage, making the formed copper gate lines neat in shape and with fewer burrs.
  • the presence of copper oxide can also extend the storage time of the yellow film, making it easier for the AIO to position and calibrate the angle when applying photosensitive glue and masks, and the diffuse reflection effect on the surface of the laser yellow film will be reduced when laser printing is performed.
  • the present application provides a method for preparing a solar cell, which comprises the following steps:
  • the original silicon wafer is textured and cleaned to form a right pyramid on the silicon wafer with a size of 2 ⁇ m to 8 ⁇ m.
  • PECVD plasma deposition equipment is used to deposit on the texturized and cleaned silicon wafer to form a front intrinsic amorphous silicon layer of 3nm ⁇ 6nm, a back intrinsic amorphous silicon layer of 3nm ⁇ 6nm, a front N-type doped layer of 5nm ⁇ 10nm and a back side
  • the P-type doped layer is 5nm ⁇ 15nm.
  • the N-type doping layer is a phosphorus-doped amorphous silicon layer
  • the P-type doping layer is a boron-doped amorphous silicon layer.
  • a PVD magnetron sputtering device is used to deposit a conductive layer of 90nm to 110nm on the surface of the N-type doped layer and the P-type doped layer to form a front and back conductive layer.
  • the conductive layer is an ITO transparent conductive layer.
  • PVD magnetron sputtering equipment is used to deposit copper seed layers of 100nm to 250nm on the surface of the conductive layer on the front and back to prepare a semi-finished battery.
  • the target material forming the mixed layer is a mixture of copper oxide and elemental copper.
  • the anaerobic environment is a vacuum environment.
  • the water vapor and oxygen content in the vacuum environment are both ⁇ 1 ppm.
  • PVD magnetron sputtering equipment is used to deposit the front and back mixed layers on the surface of the copper seed layer to form a yellow film.
  • the anaerobic environment is a vacuum environment.
  • Depositing the mixed layer in an oxygen-free environment can prevent the copper seed layer from oxidizing in an oxidizing environment, thereby improving the problem of unstable material components and uneven oxidation of the surface of the copper seed layer caused by easy oxidation of the copper seed layer. question.
  • the thickness of the mixed layer is 100 nm to 200 nm.
  • the thickness of the hybrid layer may be 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm or 200 nm.
  • the mass proportion of copper oxide in the mixed layer is 30wt% to 80wt%.
  • the mass proportion of copper oxide in the mixed layer may be 30wt%, 40wt%, 50wt%, 60wt%, 70wt% or 80wt%.
  • the mass proportion of copper oxide in the mixed layer is 50wt%.
  • An edge-covering adhesive is provided on the side of the mixed layer for coating, so that the corners and edges of the mixed layer are covered to prevent copper grid lines from being electroplated on the side of the mixed layer.
  • the width of the edge wrapping glue is ⁇ 50 ⁇ m, and the thickness of the edge wrapping glue is 10 ⁇ m to 15 ⁇ m.
  • the width of the edge tape may be 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 40 ⁇ m or 50 ⁇ m
  • the thickness of the edge tape may be 10 ⁇ m, 11 ⁇ m, 12 ⁇ m, 13 ⁇ m, 14 ⁇ m or 15 ⁇ m.
  • the thickness of the photosensitive adhesive is 10 ⁇ m to 15 ⁇ m.
  • the thickness of the photosensitive adhesive may be 10 ⁇ m, 11 ⁇ m, 12 ⁇ m, 13 ⁇ m, 14 ⁇ m or 15 ⁇ m.
  • the preset grid pattern is printed on the photosensitive adhesive by laser, so that the part of the photosensitive adhesive printed by the laser is denatured so that it can be dissolved in the developer.
  • the developer is an alkaline solution.
  • the alkaline solution is any one or more of sodium carbonate solution, calcium carbonate solution, magnesium carbonate solution and sodium hydroxide solution.
  • the main components of the mixed layer are copper oxide and elemental copper. Copper oxide can be dissolved in a weak acid solution, but elemental copper cannot be dissolved in a weak acid solution, leaving a hollow copper film and an uneven surface structure on the surface of the copper seed layer.
  • the weak acid solution includes any one or more of hydrochloric acid solution, sulfuric acid solution, acetic acid solution and oxalic acid solution.
  • the first electroplating is performed in a copper sulfate solution to form a copper grid line
  • the second electroplating is performed in a tin methane sulfonate solution to form a tin grid line.
  • the height of the formed copper gate line is 8 ⁇ m to 10 ⁇ m.
  • the copper gate lines may be formed to have a height of 8 ⁇ m, 8.2 ⁇ m, 8.5 ⁇ m, 8.8 ⁇ m, 9 ⁇ m, 9.2 ⁇ m, 9.5 ⁇ m, 9.8 ⁇ m, or 10 ⁇ m.
  • the height of the formed tin grid line is 2 ⁇ m to 4 ⁇ m.
  • the height of the formed tin gate line may be 2 ⁇ m, 8.2 ⁇ m, 8.5 ⁇ m, 8.8 ⁇ m, 9 ⁇ m, 9.2 ⁇ m, 9.5 ⁇ m, 9.8 ⁇ m, or 10 ⁇ m.
  • the temperature of the light injection treatment is 200°C to 220°C.
  • the temperature of the light injection process may be 200°C, 202°C, 205°C, 208°C, 210°C, 212°C, 215°C, 218°C, or 220°C.
  • the time of the light injection process is 60s to 120s.
  • the time of the light injection process may be 60s, 70s, 80s, 90s, 100, 110s or 120s.
  • This application also provides a solar cell, which is produced according to the above solar cell preparation method.
  • the embodiment of the present application provides a solar cell and a preparation method thereof, which includes the following steps:
  • the original silicon wafer is textured and cleaned to form a right pyramid with a size of 2 ⁇ m to 4 ⁇ m on the silicon wafer.
  • PECVD plasma deposition equipment is used to deposit a 4nm intrinsic amorphous silicon layer on the front, an 8nm intrinsic amorphous silicon layer on the back, a 6nm phosphorus-doped amorphous silicon layer on the front and a boron-doped backside on the texturized and cleaned silicon wafer.
  • a PVD magnetron sputtering device is used to deposit a 105 nm ITO transparent conductive layer on the front and back surfaces of the N-type doped layer and the P-type doped layer.
  • PVD magnetron sputtering equipment is used to deposit 200nm copper seed layers on the surface of the conductive layer on the front and back sides to produce a battery semi-finished product.
  • the battery semi-finished product consists of a copper seed layer, a conductive layer, and P-type doping in the thickness direction from the back to the front. layer, intrinsic amorphous silicon layer, silicon layer, intrinsic amorphous silicon layer, N-type doped layer, conductive layer and copper seed layer.
  • PVD magnetron sputtering equipment is used to deposit a mixed layer of 150 nm on the front and back sides on the surface of the copper seed layer to form a yellow film.
  • the mass proportion of copper oxide in the mixed layer is 50wt%.
  • An edge tape is provided on the side of the mixed layer for coating.
  • the width of the edge tape is 40 ⁇ m, and the thickness of the edge tape is 12 ⁇ m.
  • Photosensitive glue is provided on the top surface of the front mixed layer and the bottom surface of the back mixed layer, and the thickness of the photosensitive glue is 12 ⁇ m.
  • the preset grid pattern is printed on the photosensitive adhesive through laser, so that the part of the photosensitive adhesive printed by the laser is denatured.
  • the height of the copper grid line is 8 ⁇ m.
  • the height of the formed tin grid line is is 3 ⁇ m.
  • the cells that have been removed and engraved are subjected to light injection treatment.
  • the temperature of the light injection treatment is 210°C and the time of the light injection treatment is 90 seconds.
  • the embodiment of the present application provides a solar cell and a preparation method thereof, which includes the following steps:
  • the original silicon wafer is textured and cleaned to form a right pyramid with a size of 2 ⁇ m to 4 ⁇ m on the silicon wafer.
  • PECVD plasma deposition equipment is used to deposit a 4nm intrinsic amorphous silicon layer on the front, an 8nm intrinsic amorphous silicon layer on the back, a 6nm phosphorus-doped amorphous silicon layer on the front and a boron-doped backside on the texturized and cleaned silicon wafer.
  • PVD magnetron sputtering equipment is used to deposit 200nm copper seed layers on the surface of the conductive layer on the front and back sides to produce a semi-finished battery.
  • the semi-finished battery is composed of a copper seed layer, a conductive layer, and P-type doping in the thickness direction from the back to the front. layer, intrinsic amorphous silicon layer, silicon layer, intrinsic amorphous silicon layer, N-type doped layer, conductive layer and copper seed layer.
  • PVD magnetron sputtering equipment is used to deposit a mixed layer of 150 nm on the front and back sides on the surface of the copper seed layer to form a yellow film.
  • the mass proportion of copper oxide in the mixed layer is 30wt%.
  • Edge wrapping glue is provided on the side of the mixed layer for coating, and the width of the edge wrapping glue is 40 ⁇ m and the thickness of the edge wrapping glue is 12 ⁇ m.
  • Photosensitive glue is provided on the top surface of the front mixed layer and the bottom surface of the back mixed layer, and the thickness of the photosensitive glue is 12 ⁇ m.
  • the preset grid pattern is printed on the photosensitive adhesive by laser, so that the part of the photosensitive adhesive printed by the laser is denatured.
  • the height of the copper grid line is 8 ⁇ m.
  • the height of the formed tin grid line is is 3 ⁇ m.
  • the stripped and re-etched cells were subjected to light injection treatment at a temperature of 210° C. for 90 seconds.
  • the embodiment of the present application provides a solar cell and a preparation method thereof, which includes the following steps:
  • the original silicon wafer is textured and cleaned to form a right pyramid on the silicon wafer with a size of 2 ⁇ m to 4 ⁇ m.
  • PECVD plasma deposition equipment is used to deposit a 4nm intrinsic amorphous silicon layer on the front, an 8nm intrinsic amorphous silicon layer on the back, a 6nm phosphorus-doped amorphous silicon layer on the front, and a 10nm boron-doped amorphous silicon layer on the back on the silicon wafer after texturing and cleaning.
  • PVD magnetron sputtering equipment is used to deposit 200nm copper seed layers on the surface of the conductive layer on the front and back sides to produce a semi-finished battery.
  • the semi-finished battery is composed of a copper seed layer, a conductive layer, and P-type doping in the thickness direction from the back to the front. layer, intrinsic amorphous silicon layer, silicon layer, intrinsic amorphous silicon layer, N-type doped layer, conductive layer and copper seed layer.
  • a PVD magnetron sputtering device is used to deposit a 150nm mixed layer on the front and back sides of the copper seed layer to form a yellow film, in which the mass proportion of copper oxide in the mixed layer is 80wt%.
  • An edge tape is provided on the side of the mixed layer for coating.
  • the width of the edge tape is 40 ⁇ m, and the thickness of the edge tape is 12 ⁇ m.
  • Photosensitive glue is provided on the top surface of the front mixed layer and the bottom surface of the back mixed layer, and the thickness of the photosensitive glue is 12 ⁇ m.
  • the preset grid pattern is printed on the photosensitive adhesive through laser, so that the part of the photosensitive adhesive printed by the laser is denatured.
  • a first electroplating is performed in a copper sulfate solution to form a copper grid line, and the height of the copper grid line is 8 ⁇ m.
  • a second electroplating is performed in a tin methanesulfonate solution to form a tin grid line, and the height of the formed tin grid line is 3 ⁇ m.
  • the cells that have been removed and engraved are subjected to light injection treatment.
  • the temperature of the light injection treatment is 210°C and the time of the light injection treatment is 90 seconds.
  • the comparative example of the present application provides a solar cell and a method for preparing the same, which comprises the following steps:
  • the original silicon wafer is textured and cleaned to form a right pyramid with a size of 2 ⁇ m to 4 ⁇ m on the silicon wafer.
  • PECVD plasma deposition equipment is used to deposit a 4nm intrinsic amorphous silicon layer on the front, an 8nm intrinsic amorphous silicon layer on the back, a 6nm phosphorus-doped amorphous silicon layer on the front, and a 10nm boron-doped amorphous silicon layer on the back on the silicon wafer after texturing and cleaning.
  • PVD magnetron sputtering equipment is used to deposit 200nm copper seed layers on the surface of the conductive layer on the front and back sides to produce a semi-finished battery.
  • the semi-finished battery is composed of a copper seed layer, a conductive layer, and P-type doping in the thickness direction from the back to the front. layer, intrinsic amorphous silicon layer, silicon layer, intrinsic amorphous silicon layer, N-type doped layer, conductive layer and copper seed layer to make a yellow diaphragm.
  • An edge tape is provided on the side of the mixed layer for coating.
  • the width of the edge tape is 40 ⁇ m, and the thickness of the edge tape is 12 ⁇ m.
  • Photosensitive glue is provided on the top surface of the front mixed layer and the bottom surface of the back mixed layer, and the thickness of the photosensitive glue is 12 ⁇ m.
  • the preset grid pattern is printed on the photosensitive adhesive through laser, so that the part of the photosensitive adhesive printed by the laser is denatured.
  • hydrochloric acid solution to clean the exposed mixed layer to dissolve the copper oxide formed by oxidation on the surface of the copper seed layer.
  • the height of the copper grid line is 8 ⁇ m.
  • the height of the formed tin grid line is is 3 ⁇ m.
  • the cells that have been removed and engraved are subjected to light injection treatment.
  • the temperature of the light injection treatment is 210°C and the time of the light injection treatment is 90 seconds.
  • Example 1 As can be seen from Table 1, the efficiency of Example 1 is improved by 0.07% compared to Comparative Example 1, mainly because the Isc is increased by 13mA, because the copper seed layer and the electroplated copper gate line are connected through a concave and convex structure, and the current transmission between them is The loss is less, and the uniformity of the entire gate line is better than that of the control group. The height and width of the gate line are more uniform. The shading loss of the gate line is smaller, which improves Isc.
  • FF increases by 0.13%, mainly due to copper seeds. The contact resistance between the layer and the electroplated copper grid line is reduced, and the contact resistance of the entire battery is reduced, so the FF of Example 1 is improved.
  • FIGS. 3 and 4 The enlarged cross-sectional views of the grid lines of the solar cells prepared in Example 1 and Comparative Example 1 are shown in FIGS. 3 and 4 .
  • Example 1 first grows a copper seed layer and a mixed layer on the surface of the ITO conductive layer.
  • the outermost mixed layer can block the water and oxygen in the environment from affecting the internal copper seed layer, that is, it will not continue to cause oxidation problems. , and then clean the surface with a weak acid.
  • the weak acid will react with the copper oxide.
  • the main purpose of using the weak acid is to better control the reaction speed, and for the mixed layer of elemental copper and copper oxide, the weak acid can corrode all the copper oxide in the mixed layer. Clean and leave only elemental copper, so that a hollow elemental copper layer will be formed, and then copper electroplating will be carried out.
  • Electroplated copper will start to grow from the bottom copper surface of the seed layer, and the "hollow copper” will be gradually filled with electroplated copper, and then Copper gate lines are grown on the surface of the filled hollow copper, so that the contact between the electroplated copper as a whole and the copper seed layer will become better, thereby making the size of the voids at the interface between the seed layer copper and the electroplated copper smaller, and the number of voids will be significant. reduce.
  • Comparative Example 1 only grows a copper seed layer on the surface of the ITO conductive film. After the copper seed layer is oxidized by the environment, copper oxide will be formed. Before plating the copper gate line, the copper oxide is washed away with dilute sulfuric acid and then copper electroplating is performed. It can be seen from the figure that after the gate line is corroded, the surface of the seed layer is so uneven that there are 50nm to 100nm holes between it and the electroplated copper. This will seriously affect the contact resistance between the copper gate line and the seed layer, as well as the existence of holes. This will cause the growth of electroplated copper in this part to be slower, resulting in poor uniformity in gate line height and width.

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Abstract

La présente invention concerne un procédé de fabrication d'une cellule solaire comprenant : le dépôt de couches mélangées sur les surfaces des couches de germes de cuivre sur les côtés avant et arrière d'un produit de batterie semi-fini, les couches mélangées étant des mélanges de cuivre et d'oxyde de cuivre ; avant le dépôt électrolytique, l'élimination de l'oxyde de cuivre dans des régions partielles des couches mélangées ; et l'exécution d'un dépôt électrolytique pour former des lignes de grille de cuivre. Les couches mélangées sont déposées sur les surfaces des couches de germes, et l'oxyde de cuivre dans les régions partielles des couches mélangées est éliminé avant le dépôt électrolytique, de telle sorte que des films de cuivre évidés sont laissés sur les surfaces des couches de germes de cuivre ; ensuite, les lacunes sont comblées au moyen du dépôt électrolytique, et les lignes de grille de cuivre se développent progressivement, ce qui permet une combinaison efficace de l'ensemble des lignes de grille de cuivre et des couches de germes de cuivre, de manière à obtenir une faible résistance de contact. En outre, les couches mélangées contenant de l'oxyde de cuivre sont formées sur les surfaces des couches de germes de cuivre, réduisant ou évitant l'oxydation des couches de germes de cuivre pendant le processus de stockage, de telle sorte que les lignes de grille de cuivre formées présentent une morphologie régulière et peu de bavures. La présence de l'oxyde de cuivre peut également prolonger la durée de conservation des membranes jaunes.
PCT/CN2023/115249 2022-09-23 2023-08-28 Cellule solaire et son procédé de fabrication WO2024060937A1 (fr)

Applications Claiming Priority (2)

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CN115986006A (zh) * 2022-12-28 2023-04-18 通威太阳能（成都）有限公司 一种太阳电池及其制备方法
CN116314367B (zh) * 2022-12-29 2024-08-23 通威太阳能（成都）有限公司 一种铜栅线太阳电池及其制备方法
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