WO2024045597A1 - Cellule solaire et son procédé de préparation - Google Patents

Cellule solaire et son procédé de préparation Download PDF

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Publication number
WO2024045597A1
WO2024045597A1 PCT/CN2023/084944 CN2023084944W WO2024045597A1 WO 2024045597 A1 WO2024045597 A1 WO 2024045597A1 CN 2023084944 W CN2023084944 W CN 2023084944W WO 2024045597 A1 WO2024045597 A1 WO 2024045597A1
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copper seed
seed layer
solar cell
layer
amorphous silicon
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PCT/CN2023/084944
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Chinese (zh)
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王金
余义
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通威太阳能（安徽）有限公司
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Publication of WO2024045597A1 publication Critical patent/WO2024045597A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Definitions

  • the present application relates to the field of semiconductor photoelectric conversion technology, and in particular to a solar cell and a preparation method thereof.
  • heterojunction solar cells Heterojunction with Intrinsic Thin Layer, HJT
  • PERC cells Passivated Emitter and Rear Cell
  • the main method to replace silver grid electrodes is to form copper electrodes by electroplating copper.
  • a copper layer needs to be added to the surface of the TCO (transparent conductive film) as a seed layer for subsequent Cu electroplating.
  • PVD Physical Vapor Deposition
  • PVD Physical Vapor Deposition
  • This application was made in view of the above-mentioned issues, and one of its purposes is to provide a solar cell preparation method that can effectively reduce the impact of the PVD copper plating seed layer on the solar cell efficiency. Thereby improving the photoelectric conversion efficiency of solar cells.
  • the first aspect of the present application provides a method for preparing a solar cell, including the following steps:
  • Electroplating on the outermost copper seed layer forms a copper electrode
  • the deposition power of the copper seed layer forming the innermost layer is 0.2KW to 0.8KW, and the deposition power of the copper seed layer forming the innermost layer is smaller than the deposition power of the copper seed layers forming other layers.
  • the above preparation method can reduce damage to the transparent conductive film and amorphous silicon layer through low-power sputtering of the innermost copper seed layer, and play a protective role; and then cooperate with subsequent high-power deposition to quickly deposit the copper seed layer.
  • the bombardment damage to the amorphous silicon layer and transparent conductive film caused by physical vapor deposition of copper seed layer can be reduced, thereby achieving the purpose of protecting the amorphous silicon layer and transparent conductive film, and solving the heterojunction caused by bombardment.
  • the problem of solar cell efficiency loss; at the same time, the deposition speed of the copper seed layer can be guaranteed to meet the efficiency requirements of mass production.
  • the deposition power used to form each of the copper seed layers gradually increases in a direction from the innermost copper seed layer to the outermost copper seed layer.
  • the gradient film design that allows the copper seed layer to form a stack can not only protect the amorphous silicon layer and the transparent conductive film from being bombarded during the physical vapor deposition coating process, but also better ensure that Deposition rate of copper seed layer.
  • the deposition power used to form the outer copper seed layer is the deposition power used to form the adjacent inner copper seed layer. 2 times to 5 times. In this way, while ensuring that the amorphous silicon layer and transparent conductive film will not be bombarded during the physical vapor deposition coating process, the deposition speed of the copper seed layer can be further increased.
  • a first copper seed layer, a second copper seed layer and a third copper seed layer are sequentially formed on the transparent conductive film by physical vapor deposition.
  • the deposition power to form the first copper seed layer is 0.2KW ⁇ 0.8KW
  • the deposition power to form the second copper seed layer is 1.0KW ⁇ 3.5KW
  • the deposition power to form the third copper seed is The deposition power of the layer is 3.6KW ⁇ 7.5KW.
  • the thickness of the first copper seed layer is greater than 5 nm and less than 150 nm. In this way, it can ensure better protection for the amorphous silicon layer and the transparent conductive film, and better avoid bombardment damage to the amorphous silicon layer and the transparent conductive film caused by the subsequent copper seed layer plating process.
  • the transmission rate of the substrate forming the second copper seed layer is greater than or equal to the transmission rate of the substrate forming the first copper seed layer, and the transmission rate of the substrate forming the third copper seed layer is greater than or equal to The substrate transmission rate of the second copper seed layer is formed. In this way, the bombardment damage caused to the amorphous silicon layer and transparent conductive film during the coating process can be better reduced, and the deposition speed can be appropriately increased.
  • the total thickness of each copper seed layer is 100 nm to 200 nm.
  • the preparation method further includes removing the copper seeds in the area of the transparent conductive film other than the area where the copper electrode is formed. layer steps.
  • the preparation method of the solar cell substrate includes the following steps:
  • the transparent conductive film is formed on the amorphous silicon layer.
  • the method for preparing the solar cell substrate before forming the amorphous silicon layer on the single crystal silicon substrate, further includes performing a texturing process on the single crystal silicon substrate to form the single crystal silicon layer on the single crystal silicon substrate.
  • forming an amorphous silicon layer on a single crystal silicon substrate includes the following steps:
  • a doped amorphous silicon layer is formed on the intrinsic amorphous silicon layer.
  • the amorphous silicon layer is formed on the single crystal silicon substrate by a plasma enhanced chemical vapor deposition method.
  • the transparent conductive film is formed on the amorphous silicon layer by a physical vapor deposition method.
  • a second aspect of the present application provides a solar cell, which is prepared by the solar cell preparation method of the first aspect of the present application. In this way, the solar cell has high photoelectric conversion efficiency.
  • the solar cell includes:
  • An amorphous silicon layer is provided on at least one surface of the single crystal silicon substrate;
  • a transparent conductive film disposed on the surface of the amorphous silicon layer facing away from the single crystal silicon substrate;
  • Multiple layers of copper seed layers are sequentially stacked on the surface of the transparent conductive film facing away from the amorphous silicon layer;
  • a copper electrode is provided on the surface of the outermost copper seed layer on the side facing away from the transparent conductive film.
  • the amorphous silicon layer includes an intrinsic amorphous silicon layer and a doped amorphous silicon layer, and the intrinsic amorphous silicon layer is provided on the surface of the single crystal silicon substrate, so The doped amorphous silicon layer is disposed on the surface of the intrinsic amorphous silicon layer facing away from the single crystal silicon substrate.
  • the preparation method of this application is to design a stacked film layer for the copper seed layer on the transparent conductive film, and sequentially deposit it on the transparent conductive film through physical vapor deposition to form a multi-layer copper seed layer, and will form the innermost copper seed layer.
  • the deposition power of the layer is set to 0.2KW ⁇ 0.8KW, and the deposition power to form the innermost copper seed layer is smaller than the deposition power to form other copper seed layers; through low-power sputtering of the innermost copper seed layer, it can Reduce bombardment to transparent conductive films and amorphous silicon layers Damage, play a protective role; combined with subsequent high-power deposition to quickly deposit the copper seed layer.
  • the method of the present application can be used to solve the problem of heterojunction solar cell efficiency loss caused by bombardment damage during physical vapor deposition of a copper seed layer; at the same time, the deposition speed of the copper seed layer can be guaranteed to meet the efficiency requirements of mass production.
  • FIG. 1 is a schematic structural diagram of a solar cell after forming a copper seed layer according to a preparation method according to an embodiment of the present application.
  • Heterojunction solar cell 11. Single crystal silicon substrate; 12. Intrinsic amorphous silicon layer; 13a, n-type doped amorphous silicon layer; 13b, p-type doped amorphous silicon layer; 14. Transparent Conductive film; 15a, first copper seed layer; 15b, second copper seed layer; 15c, third copper seed layer.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number or order of indicated technical features. Therefore, features defined as “first” and “second” may explicitly or implicitly include at least one of these features.
  • “plurality” means at least two, such as two, three, etc., unless otherwise expressly and specifically limited.
  • some embodiments of the present application provide a method for preparing a heterojunction solar cell 10.
  • the structure of the heterojunction solar cell 10 is as shown in Figure 1 (the copper electrode is not shown).
  • the preparation method of the heterojunction solar cell 10 includes the following steps S100 to S300.
  • Step S100 Provide a heterojunction solar cell substrate with a transparent conductive film 14.
  • the heterojunction solar cell substrate includes a single crystal silicon substrate 11, and the front and back sides of the single crystal silicon substrate 11 (that is, the upper surface and the lower surface of the single crystal silicon substrate 11 in Figure 1 respectively) are respectively
  • An intrinsic amorphous silicon layer 12 is provided
  • an n-type doped amorphous silicon layer 13a is provided on the front intrinsic amorphous silicon layer 12
  • a p-type doped amorphous silicon layer 13a is provided on the back intrinsic amorphous silicon layer 12.
  • transparent conductive films 14 are respectively provided on the n-type doped amorphous silicon layer 13a and the p-type doped amorphous silicon layer 13b.
  • Step S200 sequentially form multiple copper seed layers (15a, 15b, 15c in Figure 1) on the transparent conductive film 14 of the heterojunction solar cell 10 through physical vapor deposition.
  • the deposition power of the copper seed layer forming the innermost layer is 0.2KW to 0.8KW, and the deposition power of the copper seed layer forming the innermost layer is smaller than that of the copper seed layer forming other layers. deposition power at the time.
  • Step S300 Electroplating to form a copper electrode on the outermost copper seed layer on the front and/or back side.
  • the copper seed layer on the transparent conductive film 14 is designed with a stacked film layer, and a multi-layer copper seed layer is sequentially deposited on the transparent conductive film 14 through the physical vapor deposition method to form the innermost copper seed layer.
  • the deposition power is set to 0.2KW ⁇ 0.8KW, and the deposition power to form the innermost copper seed layer is smaller than the deposition power to form other copper seed layers; in this way, the copper seed layer can be deposited at a lower cost than conventional physical vapor deposition.
  • the innermost copper seed layer is deposited under deposition power.
  • the damage to the transparent conductive film 14 and the amorphous silicon layer can be reduced and play a protective role; combined with the subsequent high-power deposition, the copper seed layer can be quickly deposited, thereby achieving For mass production purposes.
  • the bombardment damage to the amorphous silicon layer and the transparent conductive film 14 caused by physical vapor deposition of the copper seed layer can be reduced, thereby achieving the purpose of protecting the amorphous silicon layer and the transparent conductive film 14 and solving the problem caused by bombardment.
  • the problem of efficiency loss of the heterojunction solar cell 10 is eliminated; at the same time, the deposition speed of the copper seed layer can be guaranteed to meet the efficiency requirements of mass production.
  • the deposition power of the copper seed layer forming the innermost layer can be, but is not limited to, 0.2KW, 0.3KW, 0.4KW, 0.5KW, 0.6KW, 0.7KW, 0.8KW and other specific values.
  • the deposition power used to form each copper seed layer gradually increases in a direction from the innermost copper seed layer to the outermost copper seed layer. That is, from the innermost copper seed layer outward, the deposition power to form each copper seed layer gradually increases.
  • Such an arrangement allows the copper seed layer to form a laminated gradient film design, which can not only well protect the amorphous silicon layer and the transparent conductive film 14 from being bombarded during the physical vapor deposition coating process, but also better to ensure the deposition speed of the copper seed layer.
  • the deposition power to form the outer copper seed layer is to form the adjacent inner copper seed layer. 2 to 5 times the deposition power.
  • the copper seed layer in the area on the transparent conductive film 14 except where the copper electrode is formed can be removed by etching or other methods.
  • multiple copper seed layers are sequentially formed on the transparent conductive film 14 of the heterojunction solar cell 10, including the following steps S201 to S203:
  • Step S201 First, form the first copper seed layer 15a on the transparent conductive film 14 by physical vapor deposition.
  • the deposition power when forming the first copper seed layer 15a by physical vapor deposition is 0.2KW to 0.8KW, preferably 0.8KW. Forming the first copper seed layer 15a under this deposition power condition can effectively reduce bombardment damage to the amorphous silicon layer and the transparent conductive film 14 caused by physical vapor deposition plating to form the first copper seed layer 15a.
  • the thickness of the first copper seed layer 15a is greater than 5 nm and less than 150 nm. Such an arrangement can ensure better protection for the amorphous silicon layer and the transparent conductive film 14, and better avoid bombardment damage to the amorphous silicon layer and the transparent conductive film 14 caused by the subsequent copper seed layer plating process. If the thickness of the first copper seed layer 15a is too thin, it cannot achieve a good protective effect; if The thickness of the first copper seed layer 15a is too thick. Since the deposition power to form the first copper seed layer 15a is low, the overall deposition speed of the copper seed layer will be significantly reduced, which cannot well meet mass production requirements. The thickness of the first copper seed layer 15a can be reasonably set within the above range according to machine capacity requirements and product thickness requirements, and the thickness can be controlled by adjusting the substrate transmission speed and the number of coating turns during physical vapor deposition coating.
  • the belt speed (i.e., the substrate transmission speed) when depositing the first copper seed layer 15a is 0.9m/min.
  • Ar gas is used as a protective gas during the deposition process.
  • the flow rate of the Ar gas is 1000 sccm.
  • the cavity of the coating equipment is not heated, and the deposition rate is 5 mg/cycle.
  • Step S202 Form a second copper seed layer 15b on the first copper seed layer 15a by physical vapor deposition.
  • the deposition power when forming the second copper seed layer 15b is 1.0KW ⁇ 3.5KW, preferably 1.5KW.
  • the second copper seed layer 15b is formed under this deposition power condition.
  • the deposition power is higher than the deposition rate when forming the first copper seed layer 15a, but is still lower than the deposition rate of the traditional method. In this way, the bombardment damage caused by the coating process to the amorphous silicon layer and the transparent conductive film 14 can be better reduced, and the deposition speed can be appropriately increased.
  • the belt speed when depositing the second copper seed layer 15b is 0.9m/min.
  • Ar gas is used as a protective gas during the deposition process.
  • the flow rate of the Ar gas is 1000 sccm.
  • the chamber of the coating equipment is not Turn on heating and the deposition rate is 15mg/circle.
  • Step S203 Form a third copper seed layer 15c on the second copper seed layer 15b by physical vapor deposition.
  • the deposition power when forming the third copper seed layer 15c is 3.6KW ⁇ 7.5KW, preferably 3.6KW.
  • the third copper seed layer 15c is formed under this deposition power condition.
  • the deposition power is greater than the deposition rate when forming the second copper seed layer 15b, and is comparable to the deposition rate of the traditional method. In this way, the deposition speed can be significantly increased, and the deposition speed of the entire copper seed layer can better meet the mass production requirements. Due to the protection function of the first copper seed layer 15a and the second copper seed layer 15b, Therefore, using a larger deposition power when forming the third copper seed layer 15c will not cause damage to the amorphous silicon layer and the transparent conductive film 14.
  • the belt speed when depositing the third copper seed layer 15c is 0.9m/min.
  • Ar gas is used as a protective gas during the deposition process.
  • the flow rate of the Ar gas is 1000 sccm.
  • the chamber of the coating equipment is not Turn on heating and the deposition rate is 30mg/circle.
  • the transfer rate of the substrate forming the second copper seed layer 15b is greater than or equal to the transfer rate of the substrate forming the first copper seed layer 15a; forming the third copper
  • the substrate transmission rate of the seed layer 15c is greater than or equal to the substrate transmission rate of the second copper seed layer 15b. In this way, jamming can be effectively avoided.
  • the number of copper seed layers is not limited to the above-mentioned three-layer structure, and more stacked copper seed layers can also be formed on the third copper seed layer 15c in a similar manner as described above. Of course, in some cases it is also possible to use only a copper seed layer with a two-layer structure.
  • the specific number of layers and the number of deposition turns for each layer can be designed based on the actual PVD machine chamber conditions and the thickness requirements of each copper seed layer for PVD plating.
  • the thickness of the first copper seed layer 15a needs to be greater than 5 nm, while the thickness of other copper seed layers can be adjusted according to actual needs. , but the total thickness of the copper seed layer should be controlled within the range of 100nm ⁇ 200nm.
  • the deposition power when forming the first copper seed layer 15a can be, but is not limited to, 0.2KW, 0.3KW, 0.4KW, 0.5KW, 0.6KW, 0.7KW, 0.8KW and other specific values; forming the second copper
  • the deposition power of the seed layer 15b can be, but is not limited to, 1.0KW, 1.2KW, 1.5KW, 1.8KW, 2.0KW, 2.2KW, 2.5KW, 2.8KW, 3.0KW, 3.2KW, 3.5KW and other specific values;
  • the deposition power of the third copper seed layer 15c can be but is not limited to 3.6KW, 4.0KW, 4.5KW, 5.0KW, 5.5KW, 6.0KW, 6.5KW, 7.0KW, 7.5KW and other specific values;
  • the thickness of the first copper seed layer 15a can be but is not limited to 6nm, 20nm, 40nm, 80nm, 100nm, 120nm, 140nm and other specific values; the total thickness of the copper seed layer can be but not limited to Limited to
  • Some embodiments of the present application also provide a heterojunction solar cell 10.
  • the structural diagram of the heterojunction solar cell 10 is shown in Figure 1 (the copper electrode is not shown).
  • the heterojunction solar cell 10 includes an n-type single crystal silicon substrate 11, on the front (ie, the upper surface in Figure 1) and the back (ie, the lower surface in Figure 1) of the single crystal silicon substrate 11.
  • a layer of intrinsic amorphous silicon layer 12 is provided respectively; an n-type doped amorphous silicon layer 13a is provided on the intrinsic amorphous silicon layer 12 on the front; and a p-type doped amorphous silicon layer 13a is provided on the intrinsic amorphous silicon layer 12 on the back.
  • a copper seed layer 15a, a second copper seed layer 15b and a third copper seed layer 15c; similarly, the first copper seed layer 15a, the second copper seed layer 15b and the third copper seed layer 15c are also arranged on the transparent conductive film 14 on the back side.
  • Three copper seed layers 15c Three copper seed layers 15c.
  • the first copper seed layer 15a, the second copper seed layer 15b and the third copper seed layer 15c on each transparent conductive film 14 together form a copper seed layer, forming a copper seed layer with a stacked structure.
  • the thickness of the first copper seed layer 15a is greater than 5 nm and less than 150 nm, and the total thickness of each copper seed layer on each transparent conductive film 14 is 100 nm to 200 nm.
  • the number of copper seed layers in the copper seed layer of the stacked structure is not limited to the above-mentioned three-layer structure, and may also be a two-layer structure or a structure greater than three layers.
  • the preparation method of the heterojunction solar cell 10 is as follows: first, an intrinsic amorphous silicon layer 12 is formed on the single crystal silicon substrate 11; and then a doped amorphous silicon layer (specifically, It includes an n-type doped amorphous silicon layer 13a and a p-type doped amorphous silicon layer 13b); a transparent conductive film 14 is formed on the doped amorphous silicon layer; and then a copper electrode is formed on the transparent conductive film 14.
  • first physical vapor deposition is performed on the transparent conductive film 14 according to the First, multiple layers of copper seed layers are formed; and then electroplating is performed on the outermost copper seed layer to form copper electrodes. Furthermore, the deposition power of the copper seed layer forming the innermost layer is controlled to 0.2KW to 0.8KW, and the deposition power of the copper seed layer forming the innermost layer is smaller than the deposition power of the copper seed layers forming other layers.
  • the monocrystalline silicon substrate 11 needs to be textured in a texturing cleaning machine to form a texture on the surface of the monocrystalline silicon substrate 11 .
  • a pyramid-shaped suede light trapping structure is formed on the substrate to reduce the reflectivity of the single crystal silicon substrate 11 and improve light utilization;
  • intrinsic amorphous can be formed through PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition)
  • the silicon layer 12, the n-type doped amorphous silicon layer 13a and the p-type doped amorphous silicon layer 13b are formed by a physical vapor deposition method.
  • the transparent conductive film 14 is usually an ITO (indium tin oxide) film.
  • a method for preparing a heterojunction solar cell 10 including the following steps:
  • Texturing is performed on the n-type single crystal silicon substrate 11 in a texturing cleaning machine; and then an intrinsic amorphous silicon layer 12 is deposited on the front and back sides of the textured single crystal silicon substrate 11 by PECVD; Then, an n-type doped amorphous silicon layer 13a is deposited on the intrinsic amorphous silicon layer 12 on the front side by PECVD, and a p-type doped amorphous silicon layer 13b is deposited on the intrinsic amorphous silicon layer 12 on the back side; and then A transparent conductive film 14 is deposited on the n-type doped amorphous silicon layer 13a and the p-type doped amorphous silicon layer 13b respectively through physical vapor deposition; and then copper electrodes are formed on the front and back transparent conductive films 14 respectively.
  • the preparation method of copper electrode is:
  • the first copper seed layer 15a is deposited on the transparent conductive film 14 using physical vapor deposition.
  • the deposition power of the first copper seed layer 15a is 0.8KW; the substrate transmission rate during the deposition process is 0.9m/min; an Ar atmosphere is used during the deposition process, and the Ar gas flow rate is 1000 sccm; the cavity of the coating equipment is not heated during the deposition process Production, the deposition rate is 5mg/turn, and 6 turns are deposited according to the above process conditions;
  • the deposition power of the second copper seed layer 15b is 1.6KW; the substrate transmission rate during the deposition process is 0.9m/min; an Ar atmosphere is used during the deposition process, and the Ar gas flow rate is 1000 sccm; the cavity of the coating equipment is not heated during the deposition process Production, the deposition rate is 15mg/circle, and 2 cycles are deposited according to the above process conditions;
  • the deposition power of the third copper seed layer 15c is 3.6KW; the substrate transmission rate during the deposition process is 0.9m/min; an Ar atmosphere is used during the deposition process, and the Ar gas flow rate is 1000 sccm; the cavity of the coating equipment is not heated during the deposition process Production, the deposition rate is 30mg/circle, and one cycle is deposited according to the above process conditions.
  • Copper is electroplated on the third copper seed layer 15c to form a copper electrode, thereby manufacturing the heterojunction solar cell 10.
  • the efficiency (Eta), open circuit voltage (Voc), short circuit current (Isc) and fill factor (FF) of the prepared heterojunction solar cell 10 were tested. Specifically, a halm testing machine is used to perform an IV test to obtain the above electrical performance data of the heterojunction solar cell 10 . The specific test results are shown in Table 1.
  • a method for preparing a heterojunction solar cell 10 The main steps of the preparation method are the same as those in Embodiment 1. The only difference lies in the preparation method of the copper electrode.
  • a process is performed on the transparent conductive film 14 by a physical vapor deposition method.
  • a copper seed layer is deposited under process conditions, and then copper is electroplated on the copper seed layer to form a copper electrode.
  • the process conditions for depositing the copper seed layer are: the deposition power is 3.5KW; the substrate transmission rate during the deposition process is 0.9m/min; the Ar atmosphere is used during the deposition process, and the Ar gas flow rate is 1000 sccm; the chamber of the coating equipment during the deposition process The body is produced without heating, and the deposition rate is 30mg/circle.
  • the efficiency (Eta), open circuit voltage (Voc), short circuit current (Isc) and fill factor (FF) of the prepared heterojunction solar cell 10 were tested.
  • the test method was the same as in Example 1.
  • the specific test results are as shown in the table 1 shown.
  • the performance data of the heterojunction solar cell 10 of Comparative Example 1 is used as a benchmark and is set as 0.
  • the performance data of other embodiments are relative data to Comparative Example 1. It can be seen from the data in Table 1 that the performance data such as efficiency and short-circuit current of the heterojunction solar cell 10 in Example 1 of the present application are significantly improved compared to Comparative Example 1 using the traditional method. The efficiency is increased by 0.15%, and the short-circuit current is increased by 40mA.

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Abstract

La présente demande concerne une cellule solaire et son procédé de préparation. Le procédé de préparation pour la cellule solaire comprend : la fourniture d'un substrat de cellule solaire possédant des films conducteurs transparents ; la formation successive d'une pluralité de couches de germe en cuivre sur chaque film conducteur transparent au moyen d'un dépôt physique en phase vapeur ; et l'électrodéposition des couches de germe en cuivre les plus à l'extérieur pour former des électrodes en cuivre. La puissance de dépôt pour former les couches de germe en cuivre les plus à l'intérieur est de 0,2 kW à 0,8 kW et la puissance de dépôt pour former les couches de germe en cuivre les plus à l'intérieur est inférieure à la puissance de dépôt pour former d'autres couches de germe en cuivre. Dans la présente demande, la pluralité de couches de germe en cuivre sont déposées en succession sur chaque film conducteur transparent et la puissance de dépôt de chaque couche de germe en cuivre est commandée ; au moyen d'une pulvérisation à faible puissance des couches de germe en cuivre les plus à l'intérieur, un endommagement par bombardement des films conducteurs transparents et d'une couche de silicium amorphe dans le processus de dépôt peut être réduit et un effet de protection est obtenu ; et les couches de germe en cuivre peuvent être rapidement déposées au moyen d'un dépôt à haute puissance des couches de germe en cuivre suivantes, de façon à répondre à l'exigence de vitesse de production de masse.
PCT/CN2023/084944 2022-08-31 2023-03-30 Cellule solaire et son procédé de préparation WO2024045597A1 (fr)

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CN115312625B (zh) * 2022-08-31 2024-07-09 通威太阳能（安徽）有限公司 太阳电池及其制备方法
CN115700927B (zh) * 2022-11-14 2024-04-02 通威太阳能（安徽）有限公司 表面具有铜种子层的硅片及其制备方法、太阳电池
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