Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
  • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
  • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
  • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
  • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
  • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
  • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
  • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
  • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
  • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
  • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/36—Removing material
  • B23K26/38—Removing material by boring or cutting
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/36—Removing material
  • B23K26/38—Removing material by boring or cutting
  • B23K26/382—Removing material by boring or cutting by boring
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/36—Removing material
  • B23K26/40—Removing material taking account of the properties of the material involved
  • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/50—Working by transmitting the laser beam through or within the workpiece
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2101/00—Articles made by soldering, welding or cutting
  • B23K2101/36—Electric or electronic devices
  • B23K2101/42—Printed circuits
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2103/00—Materials to be soldered, welded or cut
  • B23K2103/50—Inorganic materials other than metals or composite materials
  • B23K2103/54—Glass

Definitions

• the present disclosure relates to a laser processing method, a laser processing apparatus, and an electronic device manufacturing method.
• a KrF excimer laser device that outputs a laser beam with a wavelength of about 248.0 nm and an ArF excimer laser device that outputs a laser beam with a wavelength of about 193.4 nm are used.
• the excimer laser beam has a pulse width of about several tens of ns and a short wavelength of 248.4 nm and 193.4 nm, respectively, it is sometimes used for direct processing of polymeric materials, glass materials, etc.
• the spectral line width of the spontaneous oscillation light of the KrF excimer laser device and the ArF excimer laser device is as wide as 350 pm to 400 pm. Therefore, if the projection lens is made of a material that transmits ultraviolet light such as KrF and ArF laser light, chromatic aberration may occur. As a result, resolution may be reduced. Therefore, it is necessary to narrow the spectral linewidth of the laser beam output from the gas laser device until the chromatic aberration becomes negligible. Therefore, in order to narrow the spectral line width, a line narrowing module (LNM: Line Narrowing Module) including a narrowing element (etalon, grating, etc.) is installed in the laser resonator of a gas laser device. There is.
• a gas laser device whose spectral linewidth is narrowed will be referred to as a narrowband gas laser device.
• a laser processing method includes applying a product generated from a first glass substrate to a second glass substrate by irradiating the first glass substrate with a first ultraviolet pulsed laser beam under a first irradiation condition. and forming a hole by irradiating the processing position where the product is deposited with a second ultraviolet pulsed laser beam under a second irradiation condition different from the first irradiation condition.
• a laser processing device includes an optical device that irradiates a first glass substrate and a second glass substrate with ultraviolet pulsed laser light output from the laser device, and a laser processing device that controls the laser device and the optical device.
• a laser processing apparatus comprising: a processor; the laser processing processor irradiates the first glass substrate with an ultraviolet pulsed laser beam under a first irradiation condition to transfer a product generated from the first glass substrate to a second glass substrate; The product is deposited at a processing position on the substrate, and the processing position where the product is deposited is irradiated with ultraviolet pulsed laser light under a second irradiation condition different from the first irradiation condition.
• a method for manufacturing an electronic device includes irradiating a first glass substrate with a first ultraviolet pulsed laser beam under a first irradiation condition to transfer a product generated from a first glass substrate to a second glass substrate. forming a through hole by irradiating the processing position where the product is deposited with a second ultraviolet pulse laser beam under a second irradiation condition different from the first irradiation condition; and forming a through hole in the processing position of the substrate. and an interposer having a conductor provided in a through hole, and an integrated circuit chip to be electrically connected to each other, and combining an interposer and a circuit board to electrically connect to each other. .
• FIG. 1 is a SEM image showing a porous product deposited on an alkali-free glass substrate by irradiating it with ultraviolet pulsed laser light.
• FIG. 2 is a diagram schematically showing the configuration of a laser processing system according to a comparative example.
• FIG. 3 is a diagram schematically showing the configuration of the laser device.
• FIG. 4 is a flowchart schematically showing the operation flow of the laser processing system according to the comparative example.
• FIG. 5 is a flowchart showing the flow of operations during laser drilling.
• FIG. 6 is a cross-sectional SEM image after one pulse irradiation.
• FIG. 1 is a SEM image showing a porous product deposited on an alkali-free glass substrate by irradiating it with ultraviolet pulsed laser light.
• FIG. 2 is a diagram schematically showing the configuration of a laser processing system according to a comparative example.
• FIG. 3 is a diagram schematically showing the configuration of the laser device.
• FIG. 4
• FIG. 7 is a cross-sectional SEM image after 5-pulse irradiation.
• FIG. 8 is a cross-sectional SEM image after irradiation with 10 pulses.
• FIG. 9 is a diagram illustrating how laser drilling progresses while maintaining a high aspect ratio.
• FIG. 10 is a cross-sectional SEM image after irradiation of 500 pulses or more.
• FIG. 11 is a diagram schematically showing the first to fourth phases of laser drilling.
• FIG. 12 is a microscope image taken from the side of a workpiece formed by a laser processing method according to a comparative example.
• FIG. 13 is a SEM image showing the surface of the workpiece after 3-pulse irradiation.
• FIG. 14 is a SEM image showing that the product deposited on the glass surface absorbs laser light.
• FIG. 15 is a diagram illustrating the first step of depositing laser ablation products in the processing area.
• FIG. 16 is a diagram illustrating a second step in which laser hole drilling is performed on the processing area where the product is deposited.
• FIG. 17 is a diagram showing irradiation conditions for laser ablation and irradiation conditions for laser hole processing.
• FIG. 18 is a diagram schematically showing the configuration of a laser processing system according to the second embodiment.
• FIG. 19 is a flowchart schematically showing the operation flow of the laser processing system according to the second embodiment.
• FIG. 20 is a flowchart showing the flow of operations during laser ablation.
• FIG. 20 is a flowchart showing the flow of operations during laser ablation.
• FIG. 21 is a diagram schematically showing the configuration of a laser processing system according to the third embodiment.
• FIG. 22 is a diagram showing an example of a laser ablation area set on the surface of a workpiece.
• FIG. 23 is a diagram showing how products generated from the laser ablation region are deposited in the processing region.
• FIG. 24 is a flowchart schematically showing the operation flow of the laser processing system according to the third embodiment.
• FIG. 25 is a flowchart showing the flow of operations during laser ablation.
• FIG. 26 is a diagram showing a modification of the laser ablation area.
• FIG. 27 is a diagram schematically showing the configuration of a laser processing system according to the fourth embodiment.
• FIG. 28 is a diagram illustrating the flow of operations during laser hole machining.
• FIG. 29 is a diagram illustrating the flow of operations during laser hole machining according to a modification of the fourth embodiment.
• FIG. 30 is a diagram schematically showing the configuration of a laser processing system according to the fifth embodiment.
• FIG. 31 is a diagram showing the relationship between the fluence of a pulse for laser ablation and the fluence of a pulse for laser drilling.
• FIG. 32 is a flowchart schematically showing the operation flow of the laser processing system according to the fifth embodiment.
• FIG. 33 is a flowchart showing the flow of operations related to setting irradiation conditions.
• FIG. 34 is a flowchart showing the flow of operations during ablation and laser drilling.
• FIG. 35 is a diagram schematically showing the configuration of an electronic device.
• FIG. 36 is a flowchart showing a method for manufacturing an electronic device.
• Substances such as molecules, atoms, ions, clusters, electrons, and photons sublimated by irradiation with ultraviolet pulsed laser light head toward a substrate such as a workpiece while colliding with the atmosphere in a plasma state called a plume.
• the material in the plume that reaches the substrate is deposited on the substrate in a porous state.
• materials produced by laser ablation are referred to as laser ablation products.
• FIG. 1 shows a porous product deposited by irradiating an alkali-free glass substrate with ultraviolet pulsed laser light.
• Alkali-free glass substrate is a substrate made of glass that does not contain alkaline components such as sodium and potassium. Generally, alkali-free glass has silicon dioxide, aluminum oxide, boron oxide, or alkaline earth metal oxides such as calcium oxide and barium oxide as main components.
• the alkali-free glass substrate is used, for example, as an insulating glass substrate for an interposer that relays electrical connections between an integrated circuit chip and a circuit board.
• fluence refers to the energy density of one pulse of ultraviolet pulsed laser light.
• the unit of fluence is J/ cm2 .
• FIG. 2 schematically shows the configuration of a laser processing system 1 according to a comparative example.
• the comparative example is a form that the applicant recognizes as being known only by the applicant, and is not a publicly known example that the applicant admits.
• the laser processing system 1 includes a laser device 2 and a laser processing device 4 as main components.
• the laser processing system 1 is used for laser hole processing to form holes such as via holes in a glass substrate for an interposer.
• the laser device 2 is a laser device that outputs ultraviolet pulsed laser light.
• the laser device 2 is a discharge-excited laser device that outputs ultraviolet pulsed laser light using F 2 , ArF, KrF, XeCl, XeF, or the like as a laser medium.
• the laser device 2 is a KrF excimer laser device that outputs ultraviolet pulsed laser light with a center wavelength of 248.4 nm.
• the ultraviolet pulsed laser light outputted by the laser device 2 will be simply referred to as laser light L.
• the laser device 2 and the laser processing device 4 are connected by an optical path tube 5.
• the optical path tube 5 is arranged on the optical path of the laser beam L between the exit of the laser device 2 and the entrance of the laser processing device 4.
• the laser processing device 4 includes a laser processing processor 40, an optical device 41, a frame 42, a moving stage 43, and a table 44.
• An optical device 41 and a moving stage 43 are fixed to the frame 42 .
• the table 44 supports the workpiece 45.
• the workpiece 45 is a processing target to which the laser beam L is irradiated and laser hole processing is performed.
• the workpiece 45 is a glass substrate for an interposer, and is, for example, an alkali-free glass substrate transparent to the laser beam L.
• the moving stage 43 supports a table 44.
• a workpiece 45 is fixed on the table 44 .
• the moving stage 43 is movable in the X, Y, and Z directions, and by adjusting the position of the table 44, the position of the workpiece 45 can be adjusted.
• the X direction, Y direction, and Z direction are orthogonal to each other.
• the X direction and the Y direction are parallel to the surface 45a of the workpiece 45 on which the laser beam L is incident.
• the Z direction is perpendicular to the surface 45a.
• the moving stage 43 adjusts the position of the workpiece 45 under the control of the laser processing processor 40 so that the laser beam L output from the optical device 41 is irradiated to a desired processing position within the processing area.
• a processing area refers to an area including one or more processing positions.
• the optical device 41 includes a housing 41a, high reflection mirrors 47a and 47b, an attenuator 49, an introduction optical system 50, a mask 52, and a projection optical system 53. An image having the shape of the hole to be machined is transferred to the hole.
• the high-reflection mirror 47a is arranged so that it reflects the laser light L that has passed through the optical path tube 5, and the reflected laser light L passes through the attenuator 49 and enters the high-reflection mirror 47b.
• the optical path tube 5 and the housing 41a are purged with, for example, nitrogen gas.
• the attenuator 49 is arranged on the optical path between the high reflection mirror 47a and the high reflection mirror 47b within the housing 41a.
• the attenuator 49 includes, for example, two partially reflecting mirrors 49a and 49b, and rotation stages 49c and 49d for these partially reflecting mirrors.
• the partial reflection mirrors 49a and 49b are optical elements whose transmittance changes depending on the incident angle of the laser beam L. The angle of incidence of the laser beam L on the partial reflection mirrors 49a, 49b is adjusted by the rotation stages 49c, 49d so that the fluence of the laser beam L irradiated onto the surface 45a of the workpiece 45 becomes a target value.
• the high reflection mirror 47b is arranged so as to reflect the laser light L that has passed through the attenuator 49 and to make the reflected laser light L enter the introduction optical system 50.
• the introduction optical system 50 includes a high reflection mirror 51, and is arranged so that, for example, the mask 52 is illuminated with a rectangular beam and the light intensity of the laser beam L on the mask 52 is uniform. Note that the light intensity on the mask 52 may be made uniform through an illumination system including a fly's eye lens and a condenser lens (not shown).
• the mask 52 is constructed, for example, by forming a pattern of a metal or dielectric multilayer film on a synthetic quartz substrate that transmits ultraviolet light.
• the mask 52 has a pattern formed thereon to form a hole having a diameter of 5 ⁇ m to 30 ⁇ m in the workpiece 45. Note that, assuming that the projection magnification of the projection optical system 53 is M, a pattern whose size is 1/M times the processing dimension is formed on the mask 52.
• the projection optical system 53 is a reduction projection optical system that reduces and projects the image of the mask 52.
• the mask 52 is arranged so that the image of the mask 52 is formed on the surface 45a of the workpiece 45.
• the projection optical system 53 may be a single lens or a set of lenses corrected for aberrations.
• the laser processing processor 40 transmits the target pulse energy Et and the light emission trigger Tr to the laser device 2.
• the target pulse energy Et is a target value of the pulse energy of the laser beam L.
• the light emission trigger Tr is a trigger signal for causing the laser device 2 to output one pulse of laser light L.
• FIG. 3 schematically shows the configuration of the laser device 2.
• Laser device 2 includes an oscillator 20, a monitor module 30, a shutter 35, and a laser processor 38.
• the oscillator 20 includes a chamber 21, an optical resonator including a rear mirror 25a and an output coupler (OC) 25b, a charger 23, and a pulsed power module (PPM) 22.
• OC output coupler
• PPM pulsed power module
• the chamber 21 is provided with windows 21a and 21b.
• a laser gas serving as a laser medium is sealed in the chamber 21 .
• an opening is formed in the chamber 21, and an electrically insulating plate 26 in which a plurality of feed throughs 26a are embedded is provided so as to close this opening.
• PPM 22 is arranged on electrically insulating plate 26 .
• a pair of discharge electrodes 27a and 27b as main electrodes and a ground plate 28 are arranged inside the chamber 21, .
• the shape of the discharge surface of the discharge electrodes 27a, 27b is rectangular.
• the discharge electrodes 27a and 27b are arranged so that their discharge surfaces face each other in order to excite the laser medium by discharge.
• the surface of the discharge electrode 27a opposite to the discharge surface is supported by the electrically insulating plate 26.
• Discharge electrode 27a is connected to feedthrough 26a.
• the surface of the discharge electrode 27b opposite to the discharge surface is supported by the ground plate 28.
• the PPM 22 includes a switch 22a, a charging capacitor (not shown), a pulse transformer, a magnetic compression circuit, and a peaking capacitor.
• the peaking capacitor is connected to the feedthrough 26a via a connection portion (not shown).
• Charger 23 charges the charging capacitor based on control from laser processor 38 .
• the on/off of the switch 22a is controlled by the laser processor 38.
• the laser processor 38 turns on the switch 22a in response to the light emission trigger Tr transmitted from the laser processing processor 40.
• the rear mirror 25a is formed by coating a flat substrate with a highly reflective film.
• the output coupling mirror 25b is formed by coating a flat substrate with a partially reflective film.
• the chamber 21 is arranged between the rear mirror 25a and the output coupling mirror 25b. The laser beam generated in the chamber 21 is amplified by the optical resonator and output from the output coupling mirror 25b.
• the monitor module 30 includes a beam splitter 31 and an optical sensor 32.
• the beam splitter 31 is placed on the optical path of the laser beam L output from the output coupling mirror 25b, and reflects a portion of the laser beam L.
• the optical sensor 32 is arranged at a position where the laser beam L reflected by the beam splitter 31 is incident. The optical sensor 32 measures the pulse energy of the laser beam L and transmits the measured value to the laser processor 38.
• the laser processor 38 changes the charging voltage of the charger 23 based on the pulse energy measurement value by the optical sensor 32 so that the pulse energy of the laser beam L output from the laser device 2 becomes the target pulse energy Et. control.
• the shutter 35 is placed on the optical path of the laser beam L that passes through the beam splitter 31.
• the shutter 35 opens and closes in response to commands from the laser processor 38.
• the laser processor 38 controls the output of the laser beam L from the laser device 2 by controlling the shutter 35 .
• FIG. 4 schematically shows the flow of operation of the laser processing system 1 according to the comparative example.
• the laser processing processor 40 controls each part of the laser processing system 1 to perform laser hole processing on the workpiece 45 using the laser beam L (step S10).
• Figure 5 shows the flow of operations during laser hole machining.
• the laser machining processor 40 transmits data on the target pulse energy Et required for laser hole machining to the laser device 2 (step S100).
• the laser device 2 controls the chamber 21 and transmits a preparation completion signal to the laser processing processor 40 when the laser beam L of the target pulse energy Et can be output.
• the laser processing processor 40 determines whether a preparation completion signal has been received from the laser device 2 (step S101). When the laser machining processor 40 determines that the preparation completion signal has been received (step S101: YES), it reads the irradiation conditions for laser hole machining (step S102).
• the irradiation conditions include a target fluence Fm, a pulse repetition frequency fm of the laser beam L, and a number Nm of irradiation pulses.
• the irradiation conditions may be read from an external device (not shown), via a network, or from an input device operated by an operator.
• the laser processing processor 40 sets the transmittance of the attenuator 49 to a transmittance Tm that makes the fluence of the laser beam L on the surface 45a of the workpiece 45 the target fluence Fm (step S103).
• T' is the transmittance of the optical device 41 when the transmittance of the attenuator 49 is 100%.
• Sm is the area of the transferred image of the mask 52 on the surface 45a of the workpiece 45.
• the laser processing processor 40 controls the incident angles of the partial reflection mirrors 49a and 49b using the rotation stages 49c and 49d so that the transmittance of the attenuator 49 becomes Tm.
• the laser processing processor 40 sets data indicating the initial processing position in the processing area of the workpiece 45 (step S104).
• the laser processing processor 40 positions the workpiece 45 in the XY directions by controlling the movement stage 43 based on the set data (step S105). Further, the laser processing processor 40 controls the moving stage 43 in the Z direction so that the position of the transferred image of the mask 52 substantially coincides with the surface 45a of the workpiece 45 (step S106).
• the laser processing processor 40 transmits the light emission trigger Tr to the laser device 2 based on the repetition frequency fm and the number of irradiation pulses Nm (step S107).
• laser light L is output from the laser device 2 in synchronization with the light emission trigger Tr, and enters the laser processing device 4 via the optical path tube 5.
• This laser beam L is reflected by the high reflection mirror 47a, attenuated by the attenuator 49, and then reflected by the high reflection mirror 47b.
• the laser beam L reflected by the high reflection mirror 47b is reflected by the high reflection mirror 51 of the introducing optical system 50 and enters the mask 52.
• the laser beam L transmitted through the mask 52 enters the projection optical system 53.
• the laser beam L output from the projection optical system 53 is focused on the surface 45a of the workpiece 45 as an image of the mask 52. Holes are then formed by laser ablation.
• the laser machining processor 40 determines whether the laser hole machining in the machining area is completed (step S108).
• the term "laser hole machining completed” means that laser hole machining has been completed at all machining positions within the machining area.
• the laser machining processor 40 determines that the laser hole machining has not been completed (step S108: NO)
• it sets data indicating the next machining position (step S109), and returns the process to step S105.
• the laser machining processor 40 repeatedly executes steps S105 to S107 until the laser hole machining is completed.
• step S108 determines that the laser hole machining has been completed (step S108: YES), the process ends.
• FIG. 6 to 8 are cross-sectional SEM (Scanning Electron Microscope) images of the workpiece 45 after being irradiated with one or more pulses of laser light L using a laser processing method according to a comparative example.
• FIG. 6 is a cross-sectional SEM image after one pulse irradiation.
• FIG. 7 is a cross-sectional SEM image after 5-pulse irradiation.
• FIG. 8 is a cross-sectional SEM image after irradiation with 10 pulses.
• the phase in which the laser hole machining hardly progresses even if the laser beam L is irradiated will be referred to as the first phase.
• FIG. 9 explains how laser drilling progresses while maintaining a high aspect ratio.
• the laser beam L that is not absorbed by the product self-converges inside the hole. It is presumed that the occurrence of self-focusing is caused by a waveguide effect caused by the inner wall of the hole being melted by the laser hole machining and reflecting the laser beam L from the inner wall. This tapered inner wall causes the laser beam L to self-focus on the tip of the hole due to the waveguide effect, so that the laser hole machining progresses while maintaining a high aspect ratio.
• the inner wall of the hole reflects the laser beam L, and the tip portion maintains a state of high absorption of the laser beam L, so that the laser hole machining progresses while maintaining a high aspect ratio.
• the products of laser ablation are also released from the entrance of the hole.
• the phase in which laser drilling progresses while maintaining a high aspect ratio will be referred to as the third phase.
• FIG. 10 is a cross-sectional SEM image after irradiation with 500 pulses or more.
• the hole passes through the workpiece 45.
• the inner diameter of the hole remains small regardless of the number of irradiation pulses of the laser beam L irradiated to the hole. This is because the hole penetrates the workpiece 45 and most of the products produced by laser ablation are discharged to the outside from the tip of the hole. This suppresses absorption of the laser beam L inside the hole, so that the inner diameter of the hole remains small regardless of the number of irradiation pulses.
• the phase after the hole penetrates the workpiece 45 will be referred to as the fourth phase.
• FIG. 11 schematically shows the first to fourth phases of laser drilling.
• the first phase there is almost no change in the surface 45a of the workpiece 45, and the laser drilling hardly progresses.
• laser drilling progresses with the products of laser ablation.
• the laser beam L is self-focused, and the laser drilling progresses while maintaining a high aspect ratio.
• the fourth phase after penetrating the workpiece 45, the inner diameter of the hole remains small.
• FIG. 12 is an optical microscope image of a plurality of holes formed by the laser processing method according to the comparative example taken from the side of the workpiece 45. As shown in FIG. 12, according to the laser processing method according to the comparative example, a hole with a high aspect ratio that penetrates the workpiece 45 can be formed.
• a hole with a high aspect ratio is formed by continuously irradiating the workpiece 45 with pulses of laser light L.
• the pulses irradiated in the first phase change the quality of the surface 45a of the workpiece 45, they hardly contribute to laser drilling, so the cumulative number of irradiation pulses increases.
• FIG. 13 is a SEM image showing the surface 45a of the workpiece 45 after three pulses of irradiation. As shown in FIG. 13, it can be seen that although the pulse irradiated in the first phase changes the quality of the surface 45a of the workpiece 45, it hardly contributes to laser drilling.
• the present disclosure provides a laser processing method, a laser processing apparatus, and an electronic device manufacturing method that make it possible to reduce the cumulative number of irradiation pulses by contributing to laser hole processing from the first pulse of the laser beam L. do.
• the present applicant has discovered that by depositing the product of laser ablation in the processing area and then performing laser hole processing, the first pulse of laser light L contributes to laser hole processing.
• a laser ablation product was deposited on the surface of the glass substrate by forming holes in the glass substrate by laser hole machining, as shown in FIG. Then, one pulse of laser light L was irradiated to four locations around the hole where the product was deposited. It was confirmed that the product deposited on the surface of the glass substrate absorbs the laser beam L, thereby contributing to laser hole processing from the first pulse.
• FIGS. 15 and 16 conceptually show the laser processing method according to the first embodiment.
• FIG. 15 shows the first step of depositing laser ablation products in the processing area.
• FIG. 16 shows a second step in which laser drilling is performed on the processing area where the product is deposited.
• a target substrate 60 made of the same material as the workpiece 45 is arranged so that its surface 61 faces the surface 45a of the workpiece 45 at a constant angle.
• the target substrate 60 is an alkali-free glass substrate.
• the surface 61 of the target substrate 60 is irradiated with a laser beam La capable of laser ablation.
• a plume PL is generated from the surface 61 of the target substrate 60, and a product 62 due to laser ablation is deposited on the surface 45a of the workpiece 45.
• the surface 45a of the workpiece 45 on which the product 62 has been deposited is irradiated with laser light L, which can perform laser hole machining. Since the product 62 is porous and has a high absorption rate of the laser beam L, it contributes to the laser hole machining and progresses from the first pulse.
• the laser beam La used for laser ablation and the laser beam L used for laser hole processing may be the same laser beam.
• the laser beam La and the laser beam L are, for example, ultraviolet pulsed laser beams having the same center wavelength.
• the center wavelength is 248.4 nm.
• the laser beam La is an example of the "first ultraviolet pulsed laser beam” according to the technology of the present disclosure.
• the laser beam L is an example of the "second ultraviolet pulsed laser beam” according to the technology of the present disclosure.
• the target substrate 60 is an example of a "first glass substrate” according to the technology of the present disclosure.
• the workpiece 45 is an example of a "second glass substrate” according to the technology of the present disclosure. In this embodiment, the first glass substrate and the second glass substrate are different substrates.
• FIG. 17 shows irradiation conditions for laser ablation and irradiation conditions for laser hole processing.
• first irradiation conditions the irradiation conditions for laser ablation
• second irradiation conditions the irradiation conditions for laser hole processing
• the first irradiation condition and the second irradiation condition include at least one of fluence, repetition frequency, number of irradiation pulses, and pulse width.
• the fluence, repetition frequency, and pulse width may have similar values in the first irradiation condition and the second irradiation condition. Note that the number of irradiation pulses is different between the first irradiation condition and the second irradiation condition. The number of irradiation pulses under the second irradiation condition is a value that depends on the thickness of the workpiece 45.
• the first irradiation condition and the second irradiation condition include the irradiation positions of the first ultraviolet pulsed laser beam and the second ultraviolet pulsed laser beam.
• the target substrate 60 is irradiated with laser light La during laser ablation
• the workpiece 45 is irradiated with laser light L during laser hole processing. Therefore, in this embodiment, the irradiation position is different between the first irradiation condition and the second irradiation condition.
• a product generated from the first glass substrate is transferred to the second glass substrate by irradiating the first glass substrate with the first ultraviolet pulse laser beam under the first irradiation condition. and forming a hole by irradiating the processing position where the product is deposited with a second ultraviolet pulsed laser beam under a second irradiation condition different from the first irradiation condition.
• laser hole machining is performed by depositing the product 62 of laser ablation on the surface 45a of the workpiece 45 and then irradiating the laser beam L.
• the first pulse of light L contributes to laser hole machining. This makes it possible to reduce the cumulative number of irradiation pulses.
• FIG. 18 schematically shows the configuration of a laser processing system 1a according to the second embodiment.
• the laser processing system 1a differs from the laser processing system 1 according to the comparative example in the configuration of a laser processing device 4a.
• the laser processing apparatus 4a includes a target substrate 60, a high reflection mirror 64, and a linear stage 66 in addition to the configuration of the laser processing apparatus 4 according to the comparative example.
• the target substrate 60 is made of the same material as the workpiece 45 as in the first embodiment, and is, for example, an alkali-free glass substrate.
• the target substrate 60 is fixed by a holder 63 so that its surface 61 faces the surface 45a of the workpiece 45 at a constant angle.
• the high reflection mirror 64 is connected to a linear stage 66 via a holder 65.
• the linear stage 66 moves the high reflection mirror 64 based on control from the laser processing processor 40.
• the linear stage 66 is a moving mechanism that moves the high reflection mirror 64 between a position where it is inserted into the optical path of the laser beam L between the projection optical system 53 and the workpiece 45 and a position where it is withdrawn from the optical path. be.
• the high reflection mirror 64 When the high reflection mirror 64 is inserted into the optical path of the laser beam L, it reflects the laser beam L and makes it incident on the surface 61 of the target substrate 60, and when it is withdrawn from the optical path of the laser beam L, it is exposed to the laser beam L. The light is made incident on the surface 45a of the workpiece 45.
• the laser beam L is used for laser ablation and laser hole processing. Therefore, in this embodiment, the first ultraviolet pulsed laser beam and the second ultraviolet pulsed laser beam are ultraviolet pulsed laser beams output from the same laser device 2. Moreover, in this embodiment, the first ultraviolet pulsed laser beam and the second ultraviolet pulsed laser beam are selectively irradiated onto the first glass substrate and the second glass substrate.
• FIG. 19 schematically shows the flow of operation of the laser processing system 1a according to the second embodiment.
• the operation of the laser processing system 1a according to the present embodiment is that, before step S10 in which laser hole processing is performed on the workpiece 45, a step S20 is performed in which a product 62 is deposited on the surface 45a of the workpiece 45 by laser ablation.
• This example differs from the comparative example in that it performs the following steps.
• FIG. 20 shows the flow of operations during laser ablation.
• the laser processing processor 40 controls the linear stage 66 to insert the high reflection mirror 64 into the optical path of the laser beam L (step S200).
• the laser processing processor 40 transmits data on the target pulse energy Et required for laser ablation to the laser device 2 (step S201).
• the laser device 2 controls the chamber 21 and transmits a preparation completion signal to the laser processing processor 40 when the laser beam L of the target pulse energy Et can be output.
• the laser processing processor 40 determines whether a ready signal has been received from the laser device 2 (step S202). When the laser processing processor 40 determines that the preparation completion signal has been received (step S202: YES), it reads the irradiation conditions for laser ablation (step S203).
• the irradiation conditions include the target fluence Fa, the pulse repetition frequency fa of the laser beam L, and the number Na of irradiation pulses.
• the irradiation conditions may be read from an external device (not shown), via a network, or from an input device operated by an operator.
• the laser processing processor 40 sets the transmittance of the attenuator 49 to a transmittance Ta that makes the fluence of the laser beam L on the surface 61 of the target substrate 60 the target fluence Fa (step S204).
• step S204 the laser processing processor 40 controls the incident angles of the partial reflection mirrors 49a and 49b using the rotation stages 49c and 49d so that the transmittance of the attenuator 49 becomes Ta.
• the laser processing processor 40 sets data indicating the initial processing position in the processing area of the workpiece 45 (step S205).
• the laser processing processor 40 positions the workpiece 45 in the XY directions by controlling the movement stage 43 based on the set data (step S206). Further, the laser processing processor 40 controls the moving stage 43 in the Z direction so that the product 62 due to laser ablation is deposited on the surface 45a of the workpiece 45 (step S207).
• the laser processing processor 40 transmits the light emission trigger Tr to the laser device 2 based on the repetition frequency fa and the number of irradiation pulses Na (step S208).
• laser light L is output from the laser device 2 in synchronization with the light emission trigger Tr, and enters the laser processing device 4 via the optical path tube 5.
• This laser beam L is reflected by the high reflection mirror 47a, attenuated by the attenuator 49, and then reflected by the high reflection mirror 47b.
• the laser beam L reflected by the high reflection mirror 47b is reflected by the high reflection mirror 51 of the introducing optical system 50 and enters the mask 52.
• the laser beam L transmitted through the mask 52 enters the projection optical system 53.
• Laser light L output from projection optical system 53 is reflected by high reflection mirror 64 and thereby enters surface 61 of target substrate 60 .
• ablation products 62 are deposited at the processing position on the surface 45a of the workpiece 45.
• the laser processing processor 40 determines whether the deposition of the product 62 has been completed (step S209).
• the term "the deposition of the product 62 has been completed” means that the deposition of the product 62 at all processing positions within the processing area has been completed. If the laser processing processor 40 determines that the deposition of the product 62 has not been completed (step S209: NO), it sets data indicating the next processing position (step S210), and returns the process to step S206. .
• the laser processing processor 40 repeatedly executes steps S206 to S208 until the deposition of the product 62 is completed. Note that during laser ablation, high accuracy is not required for positioning the workpiece 45 in the Z direction, so step S207 does not need to be performed in the second and subsequent repeat loops.
• step S209 YES
• the high reflection mirror 64 is retracted from the optical path of the laser beam L by controlling the linear stage 66 (step S211). ), the process ends.
• step S10 shown in FIG. 19 laser hole machining is performed on each machining position where the product 62 is deposited.
• the processing of the laser processing processor 40 in step S10 is the same as that of the comparative example.
• the laser processing device 4a uses the laser beam L output from the laser device 2 to deposit the product 62 by laser ablation and to transfer the product 62 to the processing position where the product 62 is deposited.
• Laser hole processing can be performed.
• the single laser processing system 1a can efficiently perform the deposition of the product 62 and the laser hole processing.
• the first pulse of the laser beam L contributes to laser hole machining, it is possible to reduce the cumulative number of irradiation pulses.
• the target substrate 60 is irradiated with the laser light L that has passed through the mask 52 during laser ablation, but the mask 52 may be withdrawn from the optical path of the laser light L during laser ablation.
• the laser device 2 is an excimer laser device, but the laser device 2 is not limited to an excimer laser device.
• the laser device 2 may be a YAG laser device that outputs laser light with a wavelength of about 1.03 ⁇ m to 1.06 ⁇ m or a solid state laser including a nonlinear crystal that outputs the fourth harmonic (wavelength of 257.5 nm to 266 nm) of a fiber laser. It may be a device or the like.
• FIG. 21 schematically shows the configuration of a laser processing system 1b according to the third embodiment.
• the laser processing system 1b differs from the laser processing system 1a according to the second embodiment in the configuration of a laser processing device 4b.
• the laser processing apparatus 4b is obtained by removing the target substrate 60, the high reflection mirror 64, and the linear stage 66 from the laser processing apparatus 4a according to the second embodiment. That is, the laser processing device 4b has the same configuration as the laser processing device 4 according to the comparative example.
• the laser processing processor 40 sets a part of the surface 45a of the workpiece 45 as a laser ablation area, and generates a product 62 by irradiating the laser beam L to the laser ablation area. Deposit on the processing area. Therefore, in this embodiment, both the first glass substrate and the second glass substrate according to the technology of the present disclosure are the workpiece 45 and are the same substrate.
• FIG. 22 shows an example of the laser ablation area Ra set on the surface 45a of the workpiece 45.
• the laser processing processor 40 sets, for example, the peripheral portion of the processing region Rp on the surface 45a of the workpiece 45 as the laser ablation region Ra.
• the laser processing processor 40 deposits a product 62 generated by irradiating the laser ablation region Ra with the laser beam L in the processing region Rp.
• the position where the laser beam L is irradiated to cause ablation in the laser ablation region Ra will be referred to as the laser ablation position.
• the laser processing processor 40 deposits the product 62 over the entire processing region Rp by sequentially changing the laser ablation position within the laser ablation region Ra.
• the above-mentioned first irradiation conditions and second irradiation conditions are different.
• FIG. 24 schematically shows the flow of operation of the laser processing system 1b according to the third embodiment.
• the operation of the laser processing system 1b according to the present embodiment is different from step S20 of the second embodiment in step S30 in which the product 62 is deposited by laser ablation.
• step S20 of the second embodiment in which the product 62 is deposited by laser ablation.
• FIG. 25 shows the flow of operations during laser ablation.
• the laser processing processor 40 transmits data on the target pulse energy Et required for laser ablation to the laser device 2 (step S300).
• the laser processing processor 40 determines whether a preparation completion signal has been received from the laser device 2 (step S301). When the laser processing processor 40 determines that the preparation completion signal has been received (step S301: YES), it reads the irradiation conditions for laser ablation (step S302).
• the laser processing processor 40 sets the transmittance of the attenuator 49 to a transmittance Ta that makes the fluence of the laser beam L on the surface 45a of the workpiece 45 the target fluence Fa (step S303).
• the laser processing processor 40 sets data indicating the initial laser ablation position in the laser ablation area Ra (step S304).
• the laser processing processor 40 positions the workpiece 45 in the XY directions by controlling the movement stage 43 based on the set data (step S305). Further, the laser processing processor 40 controls the moving stage 43 in the Z direction so that the product 62 due to laser ablation is deposited on the surface 45a of the workpiece 45 (step S306).
• the laser processing processor 40 transmits the light emission trigger Tr to the laser device 2 based on the repetition frequency fa and the number of irradiation pulses Na (step S307). Thereby, the laser beam L output from the projection optical system 53 is irradiated onto the laser ablation position within the laser ablation area Ra. As a result, ablation products 62 are deposited in a part of the processing region Rp adjacent to the laser ablation position.
• the laser processing processor 40 determines whether the deposition of the product 62 has been completed (step S308).
• the term "the deposition of the product 62 has been completed” means that the deposition of the product 62 in the processing region Rp has been completed. If the laser processing processor 40 determines that the deposition of the product 62 has not been completed (step S308: NO), it sets data indicating the next laser ablation position (step S309), and returns the process to step S305. return.
• the laser processing processor 40 repeatedly executes steps S305 to S307 until the deposition of the product 62 is completed. Note that during laser ablation, high accuracy is not required for positioning the workpiece 45 in the Z direction, so step S306 does not need to be performed in the second and subsequent repeat loops.
• step S308 YES
• step S10 shown in FIG. 24 laser hole processing is performed on the processing region Rp in which the product 62 is deposited.
• the processing of the laser processing processor 40 in step S10 is the same as that of the comparative example.
• the laser beam L transmitted through the mask 52 is irradiated onto the laser ablation region Ra during laser ablation, but the mask 52 may be withdrawn from the optical path of the laser beam L during laser ablation.
• the peripheral part of one processing region Rp on the surface 45a of the workpiece 45 is set as the laser ablation region Ra, but the laser ablation region Ra is not limited to this and can be changed as appropriate. be.
• FIG. 26 shows a modification of the laser ablation region Ra.
• laser ablation areas Ra are set on the surface 45a of the workpiece 45 in a grid pattern.
• the area defined by the grid-shaped laser ablation area Ra becomes the processing area Rp.
• the product 62 can be uniformly deposited in the processing region Rp.
• the processing area Rp is set to approximately the same size as the interposer chip.
• the laser ablation region Ra is a region to be cut in order to separate the processing region Rp into pieces, so there is no waste, and the entire workpiece 45 can be used to create interposer chips.
• FIG. 27 schematically shows the configuration of a laser processing system 1c according to the fourth embodiment.
• the laser processing system 1c differs from the laser processing system 1b according to the third embodiment in the configuration of a laser processing device 4c.
• the laser processing device 4c includes a nozzle 70 and a rotation stage 71 in addition to the configuration of the laser processing device 4b according to the third embodiment.
• a gas supply source 72 is connected to the nozzle 70 via a pipe 73.
• a gas flow control valve 74 is provided in the middle of the pipe 73.
• the nozzle 70 ejects the gas supplied from the gas supply source 72 toward a processing position on the surface 45a of the workpiece 45 that is irradiated with the laser beam L.
• the gas ejected from the nozzle 70 is a purge gas such as dry air.
• the nozzle 70 is held on a rotation stage 71.
• the rotation stage 71 rotates the nozzle 70 around a rotation axis parallel to the Z direction. By rotating the nozzle 70, the direction in which gas is ejected relative to the processing position changes.
• the rotation stage 71 and the gas flow control valve 74 are controlled by the laser processing processor 40.
• a laser ablation area is not set as in the third embodiment.
• laser ablation as an operation separate from laser hole machining is not performed, but the product 62 is deposited in the processing area using laser ablation that occurs during laser hole machining.
• the laser ablation product 62 generated during laser hole machining is deposited at the next machining position by gas ejected from the nozzle 70. Since the product 62 is deposited at the next processing position, it contributes to the laser hole processing from the first pulse of the laser beam L.
• both the first glass substrate and the second glass substrate according to the technology of the present disclosure are the workpiece 45 and are the same substrate. Furthermore, in this embodiment, the product 62 deposited at the laser drilling position is generated by ablation at another processing position. Therefore, in this embodiment as well, the irradiation position of the laser beam L is different during laser ablation and during laser drilling, and the above-mentioned first irradiation conditions and second irradiation conditions are different.
• FIG. 28 explains the flow of operations during laser hole machining.
• the laser processing processor 40 controls the direction of gas ejection from the nozzle 70 by controlling the rotation stage 71.
• the symbol P1 indicates the processing position during laser hole processing.
• Symbol P2 indicates the next processing position.
• Arrow D indicates the direction in which the workpiece 45 is moved by the moving stage 43 in order to set the target position for laser drilling to the next processing position P2.
• the laser processing processor 40 sets the direction in which the gas is ejected from the nozzle 70 to be opposite to the moving direction D of the workpiece 45 .
• the laser ablation products 62 generated at the processing position P1 during laser hole processing are deposited at the next processing position P2.
• the laser machining processor 40 When the laser machining processor 40 completes the laser hole machining for the machining position P1, the laser machining processor 40 moves the workpiece 45 and then performs the laser hole machining for the machining position P2 where the product 62 is deposited. The product 62 generated by this laser hole machining is further deposited at the next machining position P2.
• the laser processing processor 40 sets the gas ejection direction to the +Y direction.
• the laser processing processor 40 sets the gas ejection direction to the ⁇ X direction.
• the laser processing processor 40 sets the gas ejection direction to the ⁇ Y direction.
• FIG. 29 explains the flow of operations during laser hole machining according to a modification of the fourth embodiment.
• FIG. 29 shows an example in which laser hole machining is performed simultaneously on a plurality of machining positions lined up in the X direction.
• a multi-point mask 52 in which a plurality of holes are formed is used.
• the nozzle 70 is a multi-nozzle, and the nozzle 70 simultaneously jets gas to a plurality of processing positions P1 during laser hole processing.
• the direction in which the gas is ejected is opposite to the moving direction D of the workpiece 45.
• the products 62 due to laser ablation generated at the plurality of processing positions P1 during laser hole processing are deposited at the next plurality of processing positions P2.
• the laser processing processor 40 sets the gas ejection direction to the +Y direction.
• the plurality of machining positions P1 shown in FIG. 29(C) are the final machining positions.
• laser hole drilling is performed simultaneously on processing positions arranged in a line, but the invention is not limited to this, and for example, on processing positions arranged two-dimensionally such as 2 x 5. It is also possible to perform laser drilling at the same time. Further, in order to improve throughput, it is also preferable that the number of processing positions in the moving direction D of the workpiece 45 is smaller than the number of processing positions in the direction perpendicular to the moving direction D.
• FIG. 30 schematically shows the configuration of a laser processing system 1d according to the fifth embodiment.
• the laser processing system 1d differs from the laser processing system 1b according to the third embodiment in the configuration of a laser processing device 4d.
• the laser processing device 4d has a target pulse energy Et(k) of each of a plurality of pulses irradiated to one processing position during laser hole processing. It has a signal line that enables transmission to the laser device 2.
• k is a parameter that identifies a plurality of pulses irradiated to one processing position.
• a laser ablation area is not set as in the third embodiment. Further, in this embodiment, laser ablation is not performed as an operation separate from laser hole machining.
• a product 62 generated by laser ablation generated by an initial plurality of pulses during laser drilling is deposited at a processing position during processing, and laser drilling is performed using a plurality of subsequent pulses.
• FIG. 31 shows the relationship between the fluence Fa of the pulse for laser ablation and the fluence Fm of the pulse for laser drilling.
• the number of pulses for laser ablation is Na
• the number of pulses for laser drilling is Nm.
• the laser processing processor 40 sets a fluence Fa sufficient to generate laser ablation with an initial number of Na pulses, and irradiates the processing position with the laser light L. For this reason, it is preferable to make the fluence Fa larger than the fluence Fm.
• both the first glass substrate and the second glass substrate according to the technology of the present disclosure are the workpiece 45 and are the same substrate.
• the fluence of the laser beam L is different during laser ablation and during laser drilling, so the first irradiation conditions and the second irradiation conditions described above are different.
• the pulse for laser ablation corresponds to the "first ultraviolet pulse laser beam” according to the technology of the present disclosure.
• the pulse for laser hole machining corresponds to the "second ultraviolet pulse laser beam” according to the technology of the present disclosure.
• FIG. 32 schematically shows the operation flow of the laser processing system 1d according to the fifth embodiment.
• the laser processing processor 40 sets the irradiation conditions in step S40, and then performs laser ablation and laser hole processing on each processing position in step S50.
• FIG. 33 shows the flow of operations related to setting irradiation conditions.
• the laser processing processor 40 determines the target pulse energy Ea during laser ablation (step S400).
• the laser processing processor 40 reads irradiation conditions for laser ablation (step S401). This target fluence Fa, the pulse repetition frequency fa of the laser light L, and the number Na of irradiation pulses are included.
• the laser machining processor 40 also reads irradiation conditions for laser hole machining (step S402). This target fluence Fm, the pulse repetition frequency fm of the laser beam L, and the number of irradiation pulses Nm are included.
• the laser processing processor 40 calculates the transmittance Ta of the attenuator 49 that makes the fluence of the laser beam L on the surface 45a of the workpiece 45 the target fluence Fa (step S403).
• the laser processing processor 40 calculates the transmittance Ta using the above equation (2), for example.
• the laser machining processor 40 calculates the pulse energy Em of a pulse for laser hole machining, where Fm is the fluence of the laser beam L on the surface 45a of the workpiece 45 (step S404).
• the laser processing processor 40 sets the target pulse energies Et(1) to Et(Na) of the pulses for laser ablation to the target pulse energy Ea determined in step S400 (steps S405 to S408). Then, the laser machining processor 40 sets the target pulse energies Et(Na+1) to Et(Na+Nm) of pulses for laser hole machining to the pulse energy Em calculated in step S404 (steps S409 to S411).
• the transmittance of the attenuator 49 is fixed to the transmittance Ta calculated based on the fluence Fa for laser ablation, and the fluence Fm for laser drilling is controlled by the pulse energy Em.
• FIG. 34 shows the flow of operations during ablation and laser hole processing.
• the laser machining processor 40 transmits data on the target pulse energy Et necessary for laser hole machining to the laser device 2 (step S500).
• the laser device 2 controls the chamber 21 and transmits a ready signal to the laser processing processor 40 when the laser beams L having the target pulse energies Ea and Em can be output.
• the laser processing processor 40 determines whether a preparation completion signal has been received from the laser device 2 (step S501). When the laser processing processor 40 determines that the preparation completion signal has been received (step S501: YES), the laser processing processor 40 sets the transmittance of the attenuator 49 to the transmittance Ta calculated in step S40 (step S502).
• the laser processing processor 40 sets data indicating the initial processing position in the processing area of the workpiece 45 (step S503).
• the laser processing processor 40 positions the workpiece 45 in the XY directions by controlling the movement stage 43 based on the set data (step S504). Further, the laser processing processor 40 controls the moving stage 43 in the Z direction so that the position of the transferred image of the mask 52 substantially coincides with the surface 45a of the workpiece 45 (step S505).
• the laser processing processor 40 transmits the data of the target pulse energies Et(1) to Et(Na+Nm) set in step S40 to the laser device 2 (step S506). Then, the laser processing processor 40 transmits the light emission trigger Tr to the laser device 2 based on the repetition frequency fa and the number of irradiation pulses Na+Nm (step S507). As a result, laser ablation is performed with Na pulses having pulse energy Ea with respect to the processing position. As a result, after the product 62 of laser ablation is deposited at the processing position, laser hole processing is performed with Nm pulses having pulse energy Em.
• the laser machining processor 40 determines whether the laser hole machining in the machining area is completed (step S508).
• the term "laser hole machining completed” means that laser hole machining has been completed at all machining positions within the machining area. If the laser machining processor 40 determines that the laser hole machining has not been completed (step S508: NO), it sets data indicating the next machining position (step S509), and returns the process to step S504.
• the laser machining processor 40 repeatedly executes steps S504 to S507 until the laser hole machining is completed.
• step S508 determines that the laser hole machining has been completed (step S508: YES), the process ends.
• the fluence is changed between the pulse for laser ablation and the pulse for laser hole processing.
• the laser beam L can be irradiated under appropriate irradiation conditions for depositing the products 62 by laser ablation at the processing position, and the laser beam L can be irradiated under appropriate irradiation conditions that are optimal for laser hole machining. be able to.
• the cumulative number of irradiation pulses and the cumulative energy of the laser beam L can be reduced compared to the case of the comparative example. Thereby, the life of the consumables of the laser processing system 1d can be extended.
• FIG. 35 schematically shows the configuration of the electronic device 500.
• An electronic device 500 shown in FIG. 35 includes an integrated circuit chip 501, an interposer 502, and a circuit board 503.
• the integrated circuit chip 501 is, for example, a chip-shaped integrated circuit board in which an integrated circuit is formed on a silicon substrate.
• the integrated circuit chip 501 is provided with a plurality of bumps 501b electrically connected to the integrated circuit.
• the interposer 502 includes an insulating glass substrate in which a plurality of through holes are formed, and a conductor is provided in each through hole to electrically connect the front and back sides of the glass substrate.
• a plurality of lands connected to bumps 501b provided on the integrated circuit chip 501 are formed on one surface of the interposer 502, and each land is electrically connected to one of the conductors in the through hole.
• a plurality of bumps 502b are provided on the other surface of the interposer 502, and each bump 502b is electrically connected to one of the conductors in the through hole.
• a plurality of lands are formed on one surface of the circuit board 503 to connect to each bump 502b. Further, the circuit board 503 includes a plurality of terminals electrically connected to these lands.
• FIG. 36 shows a method for manufacturing the electronic device 500.
• the method for manufacturing an electronic device 500 in this description includes a first bonding step SP1 and a second bonding step SP2.
• the integrated circuit chip 501 and the interposer 502 are bonded.
• each bump 501b of the integrated circuit chip 501 is placed on each land of the interposer 502, and the bumps 501b and the lands are electrically connected.
• integrated circuit chip 501 and interposer 502 are electrically connected.
• the interposer 502 and the circuit board 503 are bonded. Specifically, each bump 502b of the interposer 502 is placed on each land of the circuit board 503, and the bumps 502b and the lands are electrically connected. In this way, integrated circuit chip 501 is electrically connected to circuit board 503 via interposer 502. Through the above steps, the electronic device 500 is manufactured.

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• 2022
  • 2022-08-09 JP JP2024540140A patent/JPWO2024034035A1/ja active Pending
  • 2022-08-09 WO PCT/JP2022/030505 patent/WO2024034035A1/ja not_active Ceased
  • 2022-08-09 CN CN202280097807.4A patent/CN119486835A/zh active Pending
• 2025
  • 2025-01-02 US US19/007,977 patent/US20250162082A1/en active Pending

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