WO2024029251A1 - 電子部品 - Google Patents

電子部品 Download PDF

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Publication number
WO2024029251A1
WO2024029251A1 PCT/JP2023/024303 JP2023024303W WO2024029251A1 WO 2024029251 A1 WO2024029251 A1 WO 2024029251A1 JP 2023024303 W JP2023024303 W JP 2023024303W WO 2024029251 A1 WO2024029251 A1 WO 2024029251A1
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WIPO (PCT)
Prior art keywords
element body
base electrode
reaction layer
glass film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2023/024303
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English (en)
French (fr)
Japanese (ja)
Inventor
知也 大島
悠太 星野
充 中野
耕市 山田
美希 佐々木
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2024538867A priority Critical patent/JPWO2024029251A1/ja
Publication of WO2024029251A1 publication Critical patent/WO2024029251A1/ja
Priority to US18/671,036 priority patent/US20240321487A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/034—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H01C1/142—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors the terminals or tapping points being coated on the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed with two or more layers

Definitions

  • the present disclosure relates to electronic components.
  • the electronic component described in Patent Document 1 includes an element body, a glass film, and a base electrode.
  • the element body is made of ceramics.
  • a glass film covers the outer surface of the element body.
  • the base electrode covers a portion of the outer surface of the glass film. Note that the base electrode is electrically connected to an internal electrode inside the element body.
  • An electronic component includes an element body, a glass film that covers an outer surface of the element body, and a base electrode that covers a part of the outer surface of the glass film, and the element body has Mn.
  • the base electrode includes a conductive metal and a glass component
  • the element body includes a reaction layer containing a composite oxide of Mn and the conductive metal at a location where an end of the base electrode contacts.
  • the reaction layer has voids.
  • the element body has a reaction layer, and the reaction layer has voids.
  • This gap functions as a space that buffers force when force is applied to the electronic component from the outside.
  • this reaction layer is located at a location where cracks in the glass film are likely to occur. This can prevent the occurrence of cracks in the glass film near the edges of the base electrode.
  • FIG. 2 is a perspective view of an electronic component.
  • FIG. 2 is a cross-sectional view of the XY plane passing through the central axis CA in FIG. 1.
  • FIG. 3 is an enlarged cross-sectional view of the end of the base electrode.
  • FIG. 3 is an enlarged cross-sectional view of the end of the base electrode. It is a flowchart explaining the manufacturing method of an electronic component. It is an explanatory view explaining a manufacturing method of an electronic component. It is an explanatory view explaining a manufacturing method of an electronic component. It is an explanatory view explaining a manufacturing method of an electronic component. It is an explanatory view explaining a manufacturing method of an electronic component. It is an explanatory view explaining a manufacturing method of an electronic component. It is an explanatory view explaining a manufacturing method of an electronic component. It is an explanatory view explaining a manufacturing method of an electronic component. It is an explanatory view explaining a manufacturing method of an electronic component.
  • the electronic component 10 is, for example, a surface-mounted negative temperature coefficient thermistor component mounted on a circuit board or the like. Note that the negative characteristic thermistor component has a characteristic that the resistance value decreases as the temperature increases.
  • the electronic component 10 includes an element body 20.
  • the element body 20 has a substantially quadrangular prism shape and has a central axis CA.
  • the axis extending along the central axis CA will be referred to as a first axis X.
  • one of the axes orthogonal to the first axis X is defined as a second axis Y.
  • an axis perpendicular to the first axis X and the second axis Y is defined as a third axis Z.
  • one of the directions along the first axis X is defined as a first positive direction X1, and among the directions along the first axis X, the opposite direction to the first positive direction X1 is defined as a first negative direction X2.
  • one of the directions along the second axis Y is defined as a second positive direction Y1, and the direction opposite to the second positive direction Y1 among the directions along the second axis Y is defined as a second negative direction Y2.
  • one of the directions along the third axis Z is defined as a third positive direction Z1, and among the directions along the third axis Z, the direction opposite to the third positive direction Z1 is defined as a third negative direction Z2.
  • the outer surface 21 of the element body 20 has six flat surfaces 22.
  • the "surface" of the element body 20 herein refers to what can be observed as a surface when the entire element body 20 is observed. That is, even if there are minute irregularities or steps that cannot be seen unless a part of the element body 20 is observed under a microscope or the like, it is expressed as a flat or curved surface.
  • the six planes 22 face different directions.
  • the six planes 22 are roughly divided into a first end surface 22A facing the first positive direction X1, a second end surface 22B facing the first negative direction X2, and four side surfaces 22C.
  • the four side surfaces 22C are a surface facing the third positive direction Z1, a surface facing the third negative direction Z2, a surface facing the second positive direction Y1, and a surface facing the second negative direction Y2.
  • the outer surface 21 of the element body 20 has 12 boundary surfaces 23.
  • the boundary surface 23 includes a curved surface existing at the boundary between adjacent planes 22. That is, the boundary surface 23 includes, for example, a curved surface formed by rounding the corner formed by the adjacent planes 22.
  • the outer surface 21 of the element body 20 has eight spherical corner surfaces 24.
  • the corner surface 24 is a boundary between three adjacent planes 22.
  • the corner surface 24 includes a curved surface where the three boundary surfaces 23 intersect. That is, the corner surface 24 includes a curved surface formed by, for example, rounding the corner formed by the three adjacent planes 22.
  • the surface of a glass film 50 which will be described later, is identified with the outer surface 21 of the element body 20 and is designated by a reference numeral.
  • the dimension of the element body 20 in the direction along the first axis X is larger than the dimension in the direction along the third axis Z. Furthermore, the dimension of the element body 20 in the direction along the first axis X is larger than the dimension in the direction along the second axis Y.
  • the material of the element body 20 is ceramics made of fired metal oxide. Specifically, the element body 20 contains one or more selected from Mn 3 O 4 and Mn 2 NiO 4 as the Mn oxide.
  • the electronic component 10 includes two first internal electrodes 41 and two second internal electrodes 42.
  • the first internal electrode 41 and the second internal electrode 42 are embedded inside the element body 20 .
  • the material of the first internal electrode 41 is a conductive material.
  • the material of the first internal electrode 41 is palladium.
  • the material of the second internal electrode 42 is the same as that of the first internal electrode 41.
  • the shape of the first internal electrode 41 is a rectangular plate.
  • the main surface of the first internal electrode 41 is perpendicular to the second axis Y.
  • the shape of the second internal electrode 42 is the same rectangular plate shape as the first internal electrode 41.
  • the main surface of the second internal electrode 42 is perpendicular to the second axis Y, similarly to the first internal electrode 41.
  • the dimension of the first internal electrode 41 in the direction along the first axis X is smaller than the dimension of the element body 20 in the direction along the first axis X. Further, as shown in FIG. 1, the dimension of the first internal electrode 41 in the direction along the third axis Z is approximately two-thirds of the dimension of the element body 20 in the direction along the third axis Z. The dimensions of the second internal electrode 42 in each direction are the same as those of the first internal electrode 41.
  • the first internal electrodes 41 and the second internal electrodes 42 are located alternately in the direction along the second axis Y. That is, the first internal electrode 41, the second internal electrode 42, the first internal electrode 41, and the second internal electrode 42 are arranged in this order from the side surface 22C facing the second positive direction Y1 toward the second negative direction Y2. In this embodiment, the distance between each internal electrode in the direction along the second axis Y is equal.
  • the two first internal electrodes 41 and the two second internal electrodes 42 are both located at the center of the element body 20 in the direction along the third axis Z.
  • the first internal electrode 41 is located closer to the first positive direction X1.
  • the second internal electrode 42 is located closer to the first negative direction X2.
  • the end of the first internal electrode 41 on the first positive direction X1 side matches the end of the element body 20 on the first positive direction X1 side.
  • the end of the first internal electrode 41 on the first negative direction X2 side is located inside the element body 20 and does not reach the end of the element body 20 on the first negative direction X2 side.
  • the end of the second internal electrode 42 on the first negative direction X2 side coincides with the end of the element body 20 on the first negative direction X2 side.
  • the end of the second internal electrode 42 on the first positive direction X1 side is located inside the element body 20 and does not reach the end of the element body 20 on the first positive direction X1 side.
  • the electronic component 10 includes a glass film 50.
  • Glass film 50 covers outer surface 21 of element body 20 .
  • the main material of the glass film 50 is insulating glass. Therefore, the glass film 50 contains silicon dioxide. Note that details of the glass film 50 will be described later.
  • the electronic component 10 includes a first external electrode 61 and a second external electrode 62.
  • the first external electrode 61 includes a first base electrode 61A and a first metal layer 61B.
  • the first base electrode 61A is laminated on the glass film 50 on a portion of the outer surface 21 of the element body 20 including the first end surface 22A.
  • the first base electrode 61A is a five-sided electrode that covers the first end surface 22A of the element body 20 and a portion of the four side surfaces 22C on the first positive direction X1 side.
  • the material of this first base electrode 61A is a mixture of conductive metal and glass.
  • the material of the first base electrode 61A is a mixture of Ag and glass.
  • the first metal layer 61B covers the first base electrode 61A from the outside. Therefore, the first metal layer 61B is laminated on the first base electrode 61A. Although not shown, the first metal layer 61B has a two-layer structure including a nickel layer and a tin layer in order from the first base electrode 61A side.
  • the second external electrode 62 includes a second base electrode 62A and a second metal layer 62B.
  • the second base electrode 62A is laminated on the glass film 50 on a portion of the outer surface 21 of the element body 20, including the second end surface 22B.
  • the second base electrode 62A is a five-sided electrode that covers the second end surface 22B of the element body 20 and a portion of the four side surfaces 22C on the first negative direction X2 side.
  • the material of this second base electrode 62A is the same as the material of the first base electrode 61A. That is, the material of the second base electrode 62A is a mixture of Ag and glass.
  • the second metal layer 62B covers the second base electrode 62A from the outside. Therefore, the second metal layer 62B is laminated on the second base electrode 62A. Specifically, the second metal layer 62B has a two-layer structure of a nickel layer and a tin layer, similar to the first metal layer 61B.
  • the second external electrode 62 does not reach the first external electrode 61 on the side surface 22C, and is arranged apart from the first external electrode 61 in the direction along the first axis X.
  • the first external electrode 61 and the second external electrode 62 are not stacked at the central portion in the direction along the first axis X, and the glass film 50 is exposed.
  • the first external electrode 61 and the second external electrode 62 are illustrated by two-dot chain lines.
  • the first external electrode 61 and the end of the first internal electrode 41 on the first positive direction X1 side are connected via a first penetration portion 71 that penetrates the glass film 50.
  • the first penetrating portion 71 is formed by palladium forming the first internal electrode 41 extending toward the first external electrode 61 during the manufacturing process of the electronic component 10.
  • the second external electrode 62 and the end of the second internal electrode 42 on the first negative direction X2 side are connected via a second penetration portion 72 that penetrates the glass film 50.
  • the second penetration part 72 is also formed by palladium forming the second internal electrode 42 extending toward the second external electrode 62 during the manufacturing process of the electronic component 10.
  • FIG. 2 shows the first internal electrode 41 and the first penetration part 71 as separate members with a boundary, there is actually no clear boundary between them. The same applies to the second penetrating portion 72 in this respect.
  • illustration of the first penetration part 71 and the second penetration part 72 is omitted.
  • the glass film 50 covers substantially all of the outer surface 21 of the element body 20 . Specifically, the glass film 50 covers the entire area of the outer surface 21 of the element body 20 in areas where the first base electrode 61A and the second base electrode 62A are not stacked on the element body 20. On the other hand, the glass film 50 is partially interrupted at a location where the first base electrode 61A and the second base electrode 62A are laminated on the element body 20. In such places where the glass film 50 is interrupted, the first base electrode 61A and the second base electrode 62A are in direct contact with the outer surface 21 of the element body 20.
  • the first base electrode 61A and the second base electrode 62A cover a portion of the glass film 50 and a portion of the outer surface 21 of the element body 20 that is not covered by the glass film 50. That is, the first base electrode 61A and the second base electrode 62A cover not only a part of the glass film 50 but also the part exposed by the break in the glass film 50 on the outer surface 21 of the element body 20.
  • illustration of the part where the glass film 50 is interrupted is omitted. .
  • the thickness TG of the glass film 50 in the direction perpendicular to the outer surface 21 of the element body 20 is 30 nm or more and 200 nm or less. Note that the thickness TG of the glass film 50 is an average value of values measured at three different points.
  • the element body 20 has a reaction layer 25.
  • Reaction layer 25 is a portion of element body 20 that includes outer surface 21 . That is, the outer surface 27 of the reaction layer 25 is a part of the outer surface 21 of the element body 20.
  • the reaction layer 25 contains MnAgO 2 which is a composite oxide of Mn and Ag. In other words, a portion of the element body 20 that does not contain MnAgO 2 is not the reaction layer 25 . Note that Ag in this composite oxide originates from the first base electrode 61A and the second base electrode 62A.
  • the reaction layer 25 is located in the element body 20 at a location where the first base electrode 61A and the second base electrode 62A are in contact. Therefore, the reaction layer 25 is also present at a location where the end ROI of the first base electrode 61A and the end ROI of the second base electrode 62A are in contact with each other. 3 and 4, the reaction layer 25 is shown to have a rectangular shape when viewed in cross section, but the reaction layer 25 may have an elliptical shape or a polygonal shape other than a quadrangle when viewed in cross section.
  • the end ROI of the first base electrode 61A is defined as follows. First, the electronic component 10 is viewed in cross section parallel to the central axis CA. Then, on the cross section, the total length in the direction along the central axis CA from the end of the first base electrode 61A on the first positive direction X1 side to the end edge E1 on the first negative direction X2 side is specified. Then, the range from the edge E1 of the first base electrode 61A toward the first positive direction X1 to the position E2 of 5% of the total length is defined as the end ROI of the first base electrode 61A. In this way, the end ROI of the first base electrode 61A is a range of 5% of the total length in the direction along the central axis CA from the end edge E1. In this respect, the same applies to the second base electrode 62A.
  • the thickness TR of the reaction layer 25 in the direction perpendicular to the outer surface 21 of the element body 20 is 50 nm or more and 500 nm or less.
  • the thickness TR of the reaction layer 25 is defined as follows. When an arbitrary point on the outer surface 27 of the reaction layer 25 is drawn from that point in a direction perpendicular to the outer surface 27 of the reaction layer 25, the distance between an arbitrary point on the outer surface 27 of the reaction layer 25 and the surface opposite to the outer surface 27 of the reaction layer 25 Let the distance from the intersection point be the thickness of the reaction layer 25 at that arbitrary point. Then, the thickness of each reaction layer 25 is measured at three points. The average value of the thickness of the reaction layer 25 at these three points is defined as the thickness TR of the entire reaction layer 25.
  • the reaction layer 25 has a plurality of voids 26.
  • the void 26 has an elongated shape in a specific direction.
  • the direction of the void 26 is generally along the outer surface 21 of the element body 20. Specifically, when the reaction layer 25 is observed in a cross section perpendicular to the outer surface 21 of the element body 20, the longest straight line connecting two points on the outer periphery of the void 26 is identified.
  • the acute angle between this straight line and the outer surface 27 of the reaction layer 25 is 0° or more and 45° or less.
  • the ratio of the total volume of the voids 26 to the total volume of the reaction layer 25 is defined as the porosity.
  • This porosity is 0.1% or more and 5% or less.
  • the porosity is calculated as follows. First, an electron microscope is used to photograph the end ROI of each base electrode and the cross section of the element body 20 in the vicinity thereof. Then, in the photographed image, the area of the reaction layer 25 is determined. Next, in the image, the area of the void 26 is determined. Then, the integrated value of the area of the reaction layer 25 at the portion of the element body 20 that is in contact with the end ROI is defined as the total volume of the reaction layer 25 .
  • the integrated value of the area of the voids 26 in each reaction layer 25 is taken as the total volume of the voids 26.
  • the porosity is obtained by multiplying "total volume of voids 26/total volume of reaction layer 25" by 100. Therefore, in this embodiment, the porosity is expressed as a percentage.
  • the method for manufacturing the electronic component 10 includes a laminate preparation step S11, an R chamfering step S12, a solvent charging step S13, a catalyst charging step S14, an element charging step S15, and a polymer charging step S15.
  • the method includes a step S16 and a metal alkoxide charging step S17.
  • the method for manufacturing the electronic component 10 further includes a film forming step S18, a drying step S19, a conductor coating step S20, a curing step S21, and a plating step S22.
  • a laminate which is the element body 20 without the boundary surface 23 and the corner surface 24 is prepared. That is, the laminate is in a state before R-chamfering and is in the shape of a rectangular parallelepiped with six planes 22.
  • a plurality of ceramic sheets that will become the element body 20 are prepared. The sheet is in the form of a thin plate. A conductive paste that will become the first internal electrode 41 is laminated on the sheet. A ceramic sheet that will become the element body 20 is laminated on the lamination paste. A conductive paste that will become the second internal electrode 42 is laminated on the sheet. In this way, the ceramic sheet and the conductive paste are laminated.
  • an unfired laminate is formed. Thereafter, a laminate is prepared by firing the unfired laminate at a high temperature.
  • an R chamfering step S12 is performed.
  • a boundary surface 23 and a corner surface 24 are formed on the laminate prepared in the laminate preparation step S11.
  • the corners of the laminate are rounded to form a curved boundary surface 23 and a curved corner surface 24 .
  • the element body 20 is formed.
  • a solvent injection step S13 is performed.
  • 2-propanol is charged as the solvent 82 into the reaction vessel 81.
  • a catalyst charging step S14 is performed.
  • FIG. 7 in the catalyst charging step S14, first, stirring of the solvent 82 in the reaction vessel 81 is started. Then, aqueous ammonia is poured into the reaction vessel 81 as an aqueous solution 83 containing a catalyst.
  • the catalyst in this embodiment is a hydroxide ion, and functions as a catalyst that promotes the hydrolysis of metal alkoxide 85, which will be described later.
  • an element loading step S15 is performed. As shown in FIG. 8, in the element loading step S15, the plurality of elements 20 previously formed in the R-chamfering step S12 as described above are charged into the reaction container 81.
  • a polymer charging step S16 is performed. As shown in FIG. 9, in the polymer charging step S16, polyvinylpyrrolidone is charged as the polymer 84 into the reaction container 81. As a result, the polymer 84 introduced into the reaction container 81 is adsorbed onto the outer surface 21 of the element body 20 .
  • a metal alkoxide charging step S17 is performed.
  • liquid tetraethyl orthosilicate is charged as the metal alkoxide 85 into the reaction vessel 81.
  • tetraethyl orthosilicate is sometimes called tetraethoxysilane.
  • the amount of metal alkoxide 85 introduced in the metal alkoxide introduction step S17 is calculated based on the area of the outer surface 21 of the element body 20 introduced in the element body introduction step S15. Specifically, it is calculated by multiplying the amount of metal alkoxide 85 per element body 20 necessary to form the glass film 50 covering the outer surface 21 of the element body 20 by the number of element bodies 20. .
  • a film forming step S18 is performed.
  • the stirring of the solvent 82 started in the above-mentioned solvent charging step S13 is continued for a predetermined period of time after the metal alkoxide 85 is charged into the reaction vessel 81 in the metal alkoxide charging step S17.
  • the glass film 50 is formed by a liquid phase reaction within the reaction vessel 81.
  • a drying step S19 is performed.
  • the element body 20 is taken out from the reaction vessel 81 and dried.
  • the sol-like glass film 50 is dried and becomes a gel-like glass film 50.
  • a conductor coating step S20 is performed.
  • two parts of the surface of the glass film 50 are formed: a part including a part covering the first end face 22A of the element body 20, and a part including a part covering the second end face 22B of the element body 20.
  • a curing step S21 is performed. Specifically, in the curing step S21, the glass film 50 and the element body 20 coated with the conductive paste are heated. As a result, the water and polymer 84 are vaporized from the gel-like glass film 50, so that the glass film 50 covering the outer surface 21 of the element body 20 is fired and hardened. Furthermore, in the curing step S21, the conductor paste applied in the conductor coating step S20 is fired, thereby forming the first base electrode 61A and the second base electrode 62A.
  • the glass film 50 has a part that touches Ag included in the first base electrode 61A and the second base electrode 62A, and a part that touches the glass included in the first base electrode 61A and the second base electrode 62A. There is a mixture of.
  • the glass film 50 is integrated with the glass included in the first base electrode 61A and the second base electrode 62A. At this time, the glass film 50 is attracted to the glass contained in the first base electrode 61A and the second base electrode 62A. Therefore, on the outer surface 21 of the element body 20, the thickness TG of the glass film 50 becomes uneven.
  • the molecular structure of MnAgO 2 included in the reaction layer 25 has a larger volume per molecule structure than the molecular structures of Mn 3 O 4 and Mn 2 NiO 4 included in the element body 20. That is, in the process of generating the reaction layer 25 in the element body 20, the volume of the reaction layer 25 expands, and stress is generated within the reaction layer 25. Then, the ionic bond between the metal atom and the oxygen atom in the MnAgO 2 of the reaction layer 25 is broken due to the stress. As the cutting of the molecular structure propagates starting from the point where the bond is cut, a void 26 is formed inside the reaction layer 25 .
  • the first base electrode 61A side containing silver is caused by the Kirkendall effect caused by the difference in diffusion rate between the first internal electrode 41 and the first base electrode 61A.
  • palladium contained on the first internal electrode 41 side is attracted.
  • the first penetrating portion 71 extends through the glass film 50 from the first internal electrode 41 toward the first base electrode 61A, thereby connecting the first internal electrode 41 and the first base electrode 61A.
  • the second through portion 72 that connects the second internal electrode 42 and the second base electrode 62A.
  • a plating step S22 is performed. Electroplating is performed on the first base electrode 61A and the second base electrode 62A. As a result, a first metal layer 61B is formed on the surface of the first base electrode 61A. Further, a second metal layer 62B is formed on the surface of the second base electrode 62A. Although not shown, the first metal layer 61B and the second metal layer 62B are electroplated with two types of metal, nickel and tin, so that they have a two-layer structure. In this way, electronic component 10 is formed.
  • the element body 20 has the reaction layer 25, and the reaction layer 25 has the voids 26.
  • This gap 26 functions as a space that buffers force when force is applied to the electronic component 10 from the outside.
  • this reaction layer 25 is located in a location where cracks and the like of the glass film 50 are likely to occur, that is, in the vicinity of the end ROI of each base electrode in the element body 20. This makes it possible to prevent cracks and the like from occurring in the glass film 50 near the end ROIs of the first base electrode 61A and the second base electrode 62A.
  • the first base electrode 61A and the second base electrode 62A contain Ag as a conductive metal, and the element body 20 contains one or more of Mn 3 O 4 and Mn 2 NiO 4 . Containing Mn oxide, the reaction layer 25 is MnAgO2 .
  • MnAgO 2 is generated in the Mn oxide. This changes the molecular structure and increases the volume of the reaction layer 25 compared to before the reaction. Then, strain occurs within the reaction layer 25, and the bond between Ag and O is broken. That is, according to the element body 20, the first base electrode 61A, and the second base electrode 62A having the above compositions, the voids 26 can be easily provided in the reaction layer 25.
  • the acute angle between the longest straight line connecting two points on the outer peripheral edge of the void 26 and the outer surface 27 of the reaction layer 25 is 0° or more and 45° or less. . That is, the void 26 extends generally along the outer surface 27.
  • the stress generated on the outer surface 21 of the element body 20 tends to act in a direction perpendicular to the outer surface 27 of the reaction layer 25.
  • the voids 26 extending along the outer surface 27 have a higher impact buffering effect. Therefore, the impact on the glass film 50 can be efficiently alleviated.
  • the ratio of the total volume of the voids 26 existing in the reaction layer 25 to the total volume of the reaction layer 25 is 0.1% or more and 5% or less.
  • the porosity is less than 0.1%, it is difficult to disperse stress generated in the end ROI. Therefore, when stress concentrates on the end ROI, cracks and the like are likely to occur in the glass film 50.
  • the porosity is greater than 5%, when moisture or gas enters the boundary between the element body 20 and the glass film 50, the path for moisture or gas to enter the element body 20 becomes wider. In other words, the durability of the element body 20 against moisture and gas tends to decrease. Therefore, by setting the porosity to 0.1% or more and 5% or less, stress concentrated on the end ROI can be dispersed while suppressing a decrease in the durability of the element body 20 against moisture and gas.
  • the thickness TR of the reaction layer 25 is 50 nm or more and 500 nm or less. If the reaction layer 25 is less than 50 nm thick, it is difficult to disperse stress generated in the end ROI. Therefore, when stress concentrates on the end ROI, cracks and the like are likely to occur in the glass film 50. On the other hand, when the thickness TR of the reaction layer 25 is greater than 500 nm, when moisture or gas enters the boundary between the element body 20 and the glass film 50, the moisture or gas tends to penetrate deeply into the interior of the element body 20. As a result, the durability of the element body 20 tends to decrease. Therefore, by setting the thickness TR of the reaction layer 25 to 50 nm or more and 500 nm or less, stress concentrated on the end ROI can be dispersed while suppressing a decrease in durability of the element body 20.
  • the thickness TG of the glass film 50 is 30 nm or more and 200 nm or less.
  • the thickness TR of the reaction layer 25 increases. Then, when moisture or gas enters the boundary between the element body 20 and the glass film 50, the moisture or gas easily penetrates deep into the element body 20. As a result, the durability of the element body 20 tends to decrease.
  • the thickness TG of the glass film 50 When the thickness TG of the glass film 50 is thicker than 200 nm, the conductive metal contained in the first base electrode 61A and the second base electrode 62A is difficult to diffuse into the element body 20. In other words, since the thickness TR of the reaction layer 25 becomes smaller, it is difficult to disperse stress. Therefore, when stress concentrates on the end ROI, cracks and the like are likely to occur in the glass film 50. Therefore, by setting the thickness TG of the glass film 50 to 30 nm or more and 200 nm or less, the reaction layer 25 with a suitable thickness TR can be formed.
  • the electronic component 10 is not limited to a negative characteristic thermistor component.
  • the electronic component 10 may be a thermistor component with a non-negative characteristic, a multilayer capacitor component, or an inductor component.
  • the outer surface 21 of the element body 20 does not need to have the boundary surface 23 and the corner surface 24.
  • the boundary surface 23 and the corner surface 24 may not exist.
  • the element body 20 may contain Mn oxides other than Mn 3 O 4 and Mn 2 NiO 4 .
  • the shapes of the first internal electrode 41 and the second internal electrode 42 are not limited as long as they can ensure electrical continuity with the corresponding first external electrode 61 and second external electrode 62.
  • the number of the first internal electrodes 41 and the second internal electrodes 42 does not matter, and the number of internal electrodes may be one or three or more.
  • the configuration of the first external electrode 61 is not limited to the example of the above embodiment.
  • the first external electrode 61 may be composed only of the first base electrode 61A, and the first metal layer 61B may not have a two-layer structure. The same applies to the second external electrode 62 in this respect.
  • the combination of materials for the first internal electrode 41 and the first base electrode 61A is not limited to the combination of palladium and silver.
  • it may be a combination of copper and nickel, copper and silver, silver and gold, nickel and cobalt, or nickel and gold.
  • one may be silver and the other may be a combination of silver and palladium.
  • one may be a combination of palladium and the other of silver and palladium, or one may be copper and the other a combination of silver and palladium.
  • one may be gold and the other may be a combination of silver and palladium.
  • the first internal electrode 41 may be processed to be exposed before the external electrode forming step. For example, a portion of the glass film 50 may be physically removed by polishing the first end surface 22A side of the element body 20. Thereafter, by performing a base electrode forming step, the first internal electrode 41 and the first base electrode 61A can be connected. For example, after forming the first base electrode 61A, the glass film 50 may be formed including the surface of the first base electrode 61A, and the glass film 50 covering the surface of the first base electrode 61A may be removed. The same applies to the combination of materials for the second internal electrode 42 and the second base electrode 62A.
  • the arrangement location of the first external electrode 61 is not limited to the example of the above embodiment.
  • the first external electrode 61 may be arranged only on the first end surface 22A and one side surface 22C.
  • the conductive metal included in the first base electrode 61A and the second base electrode 62A is not limited to Ag.
  • Au, Cu, etc. may be used.
  • the first base electrode 61A and the second base electrode 62A may contain two or more conductive metals. Note that if the conductive metal contained in the first base electrode 61A and the second base electrode 62A is Cu, the reaction layer 25 will contain MnCuO 2 as a composite oxide. In the case of this modification, the same effect as (2) described above can be obtained.
  • the first base electrode 61A contains conductive metal and glass
  • a part of the first base electrode 61A, including the edge may be composed only of glass without containing any metal component.
  • the glass component contained in the first base electrode 61A and the glass film 50 may be fused, and the two may not have a clear boundary. Therefore, even if a portion including the edge of the first base electrode 61A is made only of glass without containing any metal component, the end of the metal component of the first base electrode 61A is defined as the edge E1. . In this respect, the same applies to the second base electrode 62A.
  • the conductive metal contained in the first base electrode 61A and the second base electrode 62A may not be the same.
  • the first base electrode 61A may contain Ag
  • the second base electrode 62A may contain Cu.
  • the glass film 50 does not need to cover the entire area of the outer surface 21 of the element body 20; it is only necessary that the first base electrode 61A and the second base electrode 62A cover the glass film 50.
  • the range covered by the glass film 50 may be changed as appropriate in accordance with the shape of the element body 20, the positions of the first external electrode 61 and the second external electrode 62, and the like.
  • the thickness TG of the glass film 50 in the direction perpendicular to the outer surface 21 of the element body 20 may be less than 30 nm or larger than 200 nm.
  • the reaction layer 25 may contain both MnAgO 2 and MnCuO 2 as complex oxides, or may additionally contain complex oxides other than those mentioned above.
  • the thickness TR of the reaction layer 25 in the direction perpendicular to the outer surface 21 of the element body 20 may be less than 50 nm or larger than 500 nm.
  • the ratio of the total volume of the voids 26 existing in the reaction layer 25 to the total volume of the reaction layer 25 may be less than 0.1% or more than 5%.
  • the acute angle formed between the longest straight line connecting two points on the outer peripheral edge of the void 26 and the outer surface 27 of the reaction layer 25 may be larger than 45°. Regardless of the direction in which the void 26 extends, the impact buffering effect of the void 26 can be obtained.
  • (1) comprising an element body, a glass film covering the outer surface of the element body, and a base electrode covering a part of the outer surface of the glass film,
  • the element body contains Mn oxide
  • the base electrode contains a conductive metal and a glass component
  • the element body has a reaction layer containing a composite oxide of Mn and the conductive metal at a location where the end portion of the base electrode contacts,
  • the reaction layer is an electronic component having voids.
  • the base electrode contains Ag as the conductive metal
  • the element body contains one or more selected from Mn 3 O 4 and Mn 2 NiO 4 as the Mn oxide,
  • the base electrode contains Cu as the conductive metal
  • the element body contains one or more selected from Mn 3 O 4 and Mn 2 NiO 4 as the Mn oxide,
  • the acute angle formed between the longest straight line connecting two points on the outer periphery of the void and the outer surface of the reaction layer is 0° or more and 45° or less.
  • the electronic component according to any one of (1) to (4), wherein the ratio of the total volume of the voids present in the reaction layer to the total volume of the reaction layer is 0.1% or more and 5% or less. Electronic components listed.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
PCT/JP2023/024303 2022-08-02 2023-06-30 電子部品 Ceased WO2024029251A1 (ja)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251210A (ja) * 1991-12-20 1993-09-28 Mitsubishi Materials Corp 導電性チップ型セラミック素子及びその製造方法
JP2021027163A (ja) * 2019-08-05 2021-02-22 三菱マテリアル株式会社 保護膜付きサーミスタおよびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148803U (https=) * 1981-03-11 1982-09-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251210A (ja) * 1991-12-20 1993-09-28 Mitsubishi Materials Corp 導電性チップ型セラミック素子及びその製造方法
JP2021027163A (ja) * 2019-08-05 2021-02-22 三菱マテリアル株式会社 保護膜付きサーミスタおよびその製造方法

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