WO2024023202A1 - Module électronique de puissance et onduleur comprenant un module électronique de puissance - Google Patents

Module électronique de puissance et onduleur comprenant un module électronique de puissance Download PDF

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Publication number
WO2024023202A1
WO2024023202A1 PCT/EP2023/070815 EP2023070815W WO2024023202A1 WO 2024023202 A1 WO2024023202 A1 WO 2024023202A1 EP 2023070815 W EP2023070815 W EP 2023070815W WO 2024023202 A1 WO2024023202 A1 WO 2024023202A1
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WO
WIPO (PCT)
Prior art keywords
contacting
contacting element
power electronics
connection
electronics module
Prior art date
Application number
PCT/EP2023/070815
Other languages
German (de)
English (en)
Inventor
Markus Hövermann
Michael Haber
Peter Krasselt
Andreas Mühlbauer
Martin Ehrmann
Original Assignee
Vitesco Technologies Germany Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vitesco Technologies Germany Gmbh filed Critical Vitesco Technologies Germany Gmbh
Publication of WO2024023202A1 publication Critical patent/WO2024023202A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/38—Structure, shape, material or disposition of the strap connectors prior to the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates

Definitions

  • the present invention relates to a power electronics module for a power converter, such as. B. an inverter or a DC-DC converter, especially for an electric drive of a motor vehicle.
  • the invention further relates to an inverter, especially for an electric drive of a motor vehicle.
  • Power converters such as inverters or DC-DC converters, for converting an injected electrical current of one type of current (direct current, alternating current) into a current of a different type of current (alternating current, direct current) or for changing characteristic parameters, such as the voltage, of an injected current are known and are used, among other things, in electric drive devices used in motor vehicles.
  • Essential components of these power converters are power electronics modules, which carry out the task of current-to-voltage conversion.
  • the power electronics modules usually form switchable half-bridges of the power converters.
  • the object of the present application is therefore to provide a possibility of reducing the size of a power electronics module and thus of a power converter while maintaining a constant or even higher power requirement for the power converter.
  • a power electronics module in particular for a power converter, such as. B. an inverter or a DC-DC converter.
  • the power electronics module has a first power connection area, which is located in a first electrical contact level of the module, and a second power connection area, which is located in a second electrical contact level of the module.
  • the power electronics module also has a first electrical contacting element, which is formed in one piece in the form of a plate.
  • the first contacting element has a first contacting section, which rests on the first power connection surface and is physically and electrically contacted or connected to the first power connection surface, and a second contacting section, which rests on the second power connection surface and is physically and electrically contacted or connected to the second power connection surface . connected is.
  • the two contacting sections are formed opposite each other when viewed in the longitudinal direction of the first contacting element.
  • the first contacting element further has two (longitudinal) connecting sections, which each extend (in the longitudinal direction of the first contacting element next to one another, in particular parallel to one another) from the first contacting section to the second contacting section of the first contacting element and, similar to connecting webs, these two contacting sections (especially on the right and left of the respective contacting sections).
  • the first contacting element further has a recess which forms an intermediate space of the first contacting element.
  • the two contacting sections and the two connecting sections of the first contacting element run all the way around Intermediate space of the first contacting element at least partially, in particular almost completely, especially completely, enclosing.
  • the power electronics module also has a first signal connection element which is passed through the space of the first contacting element.
  • the first contacting element is formed in one piece in the form of a plate.
  • the term “plate-shaped” means that the contacting element is made of a hard, electrically conductive material, such as. B. a metal sheet, is formed with its own mechanical rigidity or strength and is therefore able to withstand a certain mechanical tension without a mechanical support. Accordingly, the first contacting element is not a classic conductor track of a circuit board, which basically has no mechanical rigidity of its own and is therefore dependent on the circuit board.
  • the first contacting element due to its special shape with the contacting sections and the connecting sections that connect these two contacting sections to one another in one piece, provides a power connection between power connection surfaces in two different contact levels (at different heights) of the power electronics module and also a signal connection between signal connection surfaces in two ( further) different contact levels (at different heights) of the power electronics module, the power or signal connection surfaces of the power module can be designed to be distributed over different heights of the power module. Accordingly, it can be avoided that the connection surfaces and thus also the current or signal-carrying components have to be installed on one level. This in turn avoids complex interconnection of these components with numerous bond connections.
  • the first contacting element already replaces first bond connections that would otherwise be required for the power connection between the power connection surfaces.
  • the remaining signal connection through the space between the first contacting element can be established with one or a few bond connections. Thanks to the spatially protected position of the first contacting element The signal connection is also not susceptible to external interference. By reducing the number of bond connections, which require a relatively large amount of space, the overall height of the module can also be reduced despite the current/signal connection surfaces being designed on different contact levels.
  • a compact structure of the power module can be achieved with a small size compared to a module with current or signal-carrying components on one level or current-Z signal connection surfaces on one contact level.
  • the power connection via the first contacting element and the signal connection through the gap on the first contacting element can be carried out with a sufficient spatial distance and thus a sufficient insulation distance, which has a positive effect on the parasitic inductance in the module.
  • the solution described above enables the use of compact and powerful semiconductors, especially silicon carbide semiconductors, such as. B. silicon carbide MOSFETs, and thus a further miniaturization of the current-carrying components in the power electronics module and thus a reduction in the size of the power electronics module itself.
  • the first contacting element can be contacted directly to the silicon carbide semiconductors and other current-carrying components, for example by soldering or sintering.
  • This provides the possibility of reducing the size of a power electronics module and thus of a power converter while maintaining a constant or higher power requirement for the power converter.
  • the power electronics module further has a first signal connection area and a second signal connection area.
  • the first signal connection surface lies in the first contact level.
  • the second signal connection surface lies in a third contact level of the module.
  • the first, second and third contact levels of the module are at different heights of the module, with the second contact level lying between the first and third contact levels.
  • the first Signal connection element electrically connects the first signal connection surface to the second signal connection surface.
  • the first signal connection element thus bridges the height difference between the first and the third contact level and connects the first and the second signal connection surface via the shortest connection path through the space between the first contacting element.
  • the first contacting element is formed as a stamped and bent part that is bent from the first contact level towards the second contact level.
  • the first contacting element thus overcomes the height difference between the first and second contact levels.
  • the first contacting element can be made from a plate-shaped metal part or a metal sheet, especially from a plate-shaped copper part or a copper sheet, in cutting and forming processes such as punching, fine cutting, etching, lasering, etc. and subsequent bending and / or calibrating can be manufactured in a simple manner and can also be dimensioned flexibly according to the shape and requirements. Furthermore, further areas can be designed in the contacting element, such as. B. Areas to increase strength or openings (or other spaces) to carry out further signal connections.
  • the first contacting element on the first contacting section has at least one connection lug which is bent away from the main plane of the first contacting section towards the first contact level.
  • the first contacting element can have at least one further connection lug on the second contacting section, which is bent away from the main plane of the second contacting section towards the second contact level.
  • the connection lugs enable the first contacting element to further overcome the height difference between the first and second contact levels.
  • the power electronics module for example, also has a third power connection area which lies in the second contact level.
  • the power electronics module has, for example, a second electrical contacting element, which is formed in one piece in the form of a plate.
  • the second contacting element has a first contacting section, which rests on the third power connection surface and is physically and electrically contacted or connected to the third power connection surface, and a second contacting section, which is formed as a first external power connection of the power electronics module and is set up, the power electronics module to be electrically connected to a first external power connection.
  • the two contacting sections are formed opposite each other when viewed in the longitudinal direction of the second contacting element.
  • the second contacting element further has two (longitudinal) connecting sections, which each extend (in the longitudinal direction of the second contacting element next to one another, in particular parallel to one another) from the first contacting section to the second contacting section of the second contacting element and, similar to connecting webs, these two contacting sections ( In particular, connect corresponding edge regions of the respective contacting sections in pairs in one piece. Between the two connecting sections, the second contacting element also has a recess which forms an intermediate space of the second contacting element.
  • the two contacting sections and the two connecting sections of the second contacting element continuously enclose the intermediate space of the second contacting element at least partially, in particular almost completely, especially completely.
  • the first signal connecting element is guided through the space between the second contacting element.
  • the second contacting element is in particular made of another plate-shaped one
  • Metal part or another metal sheet especially from another plate-shaped copper part or another copper sheet, formed in one piece in the form of a plate.
  • the first contacting section of the second contacting element has at least one connection lug which is bent away from the main plane of the second contacting element of the second contacting element in the direction of the second contact plane.
  • the power electronics module also has at least one electrically insulating plastic mass, which is formed from an electrically insulating and thermally conductive material.
  • the power electronics module has, for example, at least one first metal plate, which is at least partially embedded in the plastic mass and has an exposed surface. At least part of the surface of the first metal plate forms the second signal connection surface of the power electronics module.
  • the first signal connecting element is formed as a bonding wire or a bonding ribbon.
  • the power electronics module also has a third signal connection area which lies in the third contact level of the module.
  • the power electronics module has, for example, a fourth signal connection surface on a surface of the first contacting element facing away from the first power connection surface (or on a surface of the first contacting section of the first contacting element facing away from the first power connection surface).
  • the power electronics module has a second signal connection element, which is passed through the gap of the second contacting element and electrically connects the fourth signal connection surface to the third signal connection surface.
  • the power electronics module also has at least one second metal plate, which is at least partially embedded in the plastic mass and has an exposed surface. At least part of the surface of the second metal plate forms the third signal connection surface of the power electronics module.
  • the power electronics module further has at least one further signal connection area in the second contact level of the module and at least one further signal connection area in the third contact level of the module.
  • the power electronics module has, for example, at least one further signal connection element, which is passed through the space of the second contacting element and electrically connects the aforementioned further signal connection surface in the second contact level with the aforementioned further signal connection surface in the third contact level.
  • the power electronics module also has a circuit carrier which has a first conductor track and a second conductor track on the same surface or the same assembly side. A part of the first conductor track forms the first power connection area of the power electronics module.
  • the power electronics module also has, for example, a first semiconductor switch which has a first load current connection on its first surface and a second load current connection on its second surface facing away from the first surface. The first semiconductor switch rests on the second conductor track via the first load current connection and is physically and electrically contacted or connected to the second conductor track. The second load current connection of the first semiconductor switch forms the second power connection area of the power electronics module. The first contacting element thus electrically connects the first conductor track to the second load current connection of the first semiconductor switch.
  • the second conductor track forms the first signal connection area.
  • the first signal connection element electrically connects the second conductor track to the first metal plate.
  • the power electronics module further has a second semiconductor switch, which has a first load current connection on its first surface and a second load current connection on its second surface facing away from the first surface.
  • the second semiconductor switch rests on the first conductor track via the first load current connection and is physically and electrically contacted or connected to the first conductor track.
  • the second load current connection of the second Semiconductor switch forms the third power connection area of the power electronics module.
  • the semiconductor switches can be transistors based on silicon carbide or gallium nitride, such as.
  • SiC MOSFETs in English “Silicon-Carbide Metal Oxide Field-Effect Transistor” or GaN-MOSFETs (in English “Gallium-Nitride Metal Oxide Field-Effect Transistor”) can be formed.
  • the semiconductor switches can be formed as field effect transistors based on beta-Ga2O3 (in English “beta-gallium oxide”). It is also possible that the semiconductor switches are formed as Si-IGBTs, i.e. as IGBTs (IGBT in English “Silicon-Carbide Insulated Gate Bipolar Transistor”) based on silicon.
  • the power electronics module further has a third electrical contacting element formed in one piece in the form of a plate, which rests on the second conductor track and is physically and electrically contacted or connected to the second conductor track.
  • the third contacting element is formed, for example, as a third plate-shaped metal or copper part or a third metal or copper sheet.
  • the power electronics module also has, for example, a plate-shaped electrical insulator which is arranged between the second and the third contacting element and is physically and thermally connected to the second and the third contacting element. The insulator physically connects the second and third contacting elements to one another and at the same time electrically isolates these two contacting elements from each other.
  • the insulator is part of the aforementioned plastic mass.
  • the power electronics module further has a fourth electrical contacting element formed in one piece in the form of a plate, which rests on the first conductor track and is physically and electrically contacted or connected to the first conductor track.
  • the fourth contacting element is formed, for example, as a fourth plate-shaped metal or copper part or a fourth metal or copper sheet.
  • the circuit carrier has a (particularly metallic) cooling layer for cooling the power electronics module on a further surface facing away from the conductor tracks.
  • an inverter specifically for an electric drive of a motor vehicle.
  • the inverter has a housing and a number of power electronics modules described above, which are arranged in the housing.
  • Figure 1 shows a schematic top view of a contacting element of a power electronics module according to an exemplary embodiment of the invention
  • FIG. 2 shows a further schematic top view representation of a further contacting element of a power electronics module according to a further exemplary embodiment of the invention
  • FIG. 3 shows a further schematic top view representation of a power electronics module according to an exemplary embodiment of the invention with the contacting elements from FIGS. 1 and 2;
  • Figure 4 shows the module from Figure 3 in a schematic cross-sectional representation.
  • Figure 1 shows a first one in a schematic top view
  • Contacting element KE1 according to an exemplary embodiment of Invention, which is used as a first contacting element in a power electronics module LM from Figures 3 and 4.
  • the first contacting element KE1 is punched and bent from a copper sheet (made of high-purity copper or a copper alloy) as a one-piece stamped and bent part in a corresponding shape.
  • the first contacting element KE1 is shaped symmetrically about its longitudinal axis L1.
  • the first contacting element KE1 is divided into a first contact area KB1 with a first contacting section K11, a second contact area KB2 with a second contacting section K12, which lies away from the first contact area KB1 when viewed in the extension direction of the longitudinal axis L1 of the contacting element KE1, and a connection area VB1 two connecting strips or two connecting sections V1, which is located between the two contact areas KB1, KB2 and connects these two areas KB1, KB2 with one another in one piece.
  • the first contact area KB1 or the first contacting section K11 is shaped like a strip and extends transversely to the extension direction of the longitudinal axis L1 of the contacting element KE1.
  • the two connecting strips V1 of the connecting region VB1 are shaped essentially symmetrically to one another and extend leg-shaped from one of the two end regions of the first contacting section K11 along the extension direction of the longitudinal axis L1 towards the second contact region KB2 and connect the second contact region KB2 with the first contacting section K11 in one piece.
  • the two connecting sections V1 are bent from the main plane of the first contacting section K11 towards the main plane of the second contact area KB2 and thus bridge the height difference between the main planes of the contact areas KB1, KB2.
  • the two connecting sections V1 bridge the longitudinal distance along the longitudinal axis L1 between the two contacting sections K11, K12.
  • the connecting area VB1 has a cross-connecting web QV1 which extends transversely to the direction of extension of the longitudinal axis L1 of the first contacting element KE1 and which connects the two connecting sections V1 to one another at their respective partial sections adjacent to the second contact area KB2.
  • the cross-connection web QV1 serves primarily to mechanically stabilize the connection area VB1 and thus to increase the mechanical strength of the first contacting element KE1.
  • the first contacting element KE1 has a recess which is completely surrounded by the two contact areas KB1, KB2 and the connection area VB1 or by the first contacting section K11 and the two connecting sections V1 together with the cross-connection web QV1 and thus has a recess extending through the first contacting element KE1.
  • bordered space R1 forms. The functionality of the gap R1 is described in more detail below with reference to Figures 3 and 4.
  • the second contact area KB2 or the second contacting section K22 has four connecting lugs F1, which are distributed in pairs on one of the two connecting sections V1 and are shaped like prongs of a fork and extend parallel to one another in the direction of the longitudinal axis L1 of the first contacting element KE1. Between the four connecting lugs F1, the second contact area KB2 has slots SL1, which form a cross shape in the top view of the first contacting element KE1 and physically separate the four connecting lugs F1 from one another at their exposed ends, so that the four connecting lugs F1 do not touch each other.
  • the connection lugs F1 are bent away from the main plane of the second contact area KB2 or the second contacting section K22, as illustrated in FIG.
  • the first contacting element KE1 is essentially square in shape. At four corner areas, the contacting element KE1 each has a protruding (positioning) formation AF, via which the contacting element KE1 can be used in subsequent assembly steps, such as. B. when soldering or sintering the Contacting element KE1 on a circuit carrier or a semiconductor, can be held by a corresponding carrier tool and positioned in the corresponding assembly position.
  • FIG. 2 shows a further schematic top view representation of a second contacting element KE2 according to a further exemplary embodiment of the invention, which is inserted as a second contacting element in the power electronics module LM from FIGS. 3 and 4.
  • the second contacting element KE2 is also punched and bent in a corresponding shape as a one-piece stamped and bent part made of a copper sheet (made of high-purity copper or a copper alloy).
  • the second contacting element KE2 is shaped symmetrically about its longitudinal axis L2.
  • the second contacting element KE2 is divided into an internal contact area IB with a first contacting section K21, via which the contacting element KE2 is electrically connected internally to the power electronics module, an external contact area AB with a second contacting section K22, which, viewed in the extension direction of the longitudinal axis L2 of the contacting element KE2, is the internal contact area IB is located away and via which the contacting element KE2 or the power electronics module LM is electrically connected externally, as well as a connection area VB2 with two connection sections V2, which is located between the internal contact area IB and the external area AB and connects these two areas IB, AB in one piece.
  • the external contact area AB or the second contacting section K22 is essentially rectangular in shape in the top view of the second contacting element KE2 and correspondingly has a rectangular, flat contact surface which is used for electrically contacting the second contacting element KE2 and thus the module LM with an external electrical component .
  • the second contacting section K22 further has one or more (positioning) holes or bores LO that pass through the second contacting section K22, via which the contacting element KE2 is used in subsequent assembly steps, such as e.g. B. when soldering or sintering the contacting element KE2 onto a circuit carrier, can be held by a corresponding carrier tool and positioned in the corresponding assembly position.
  • the two connecting sections V2 are shaped essentially symmetrically to one another and extend leg-shaped from the external contact area AB or the second contacting section K22 in the extension direction of the longitudinal axis L2 of the contacting element KE2 towards the internal contact area IB.
  • the external contact area AB and the connection area VB2 or the second contacting section K22 and the two connection sections V2 therefore essentially have the shape of a tuning fork.
  • the two connecting sections V2 connect the external contact area AB with the internal contact area IB, which adjoins the connecting area VB2 in the extension direction of the longitudinal axis L2 of the contacting element KE2.
  • the two connecting sections V2 are bent from the main plane of the external contact area AB towards the main plane of the internal contact area IB and thus bridge the height difference between the main planes of the external and internal contact areas AB, IB.
  • the two connecting sections V2 bridge the longitudinal distance along the longitudinal axis L2 between the two contacting sections K21, K22.
  • the connecting area VB2 has a cross-connecting web QV2 which extends transversely to the direction of extension of the longitudinal axis L2 of the second contacting element KE2 and which connects the two connecting sections V2 to one another at their respective partial sections adjacent to the internal contact area IB.
  • the cross-connection web QV2 primarily serves to mechanically stabilize the connection area VB2 and thus to increase the mechanical strength of the second contacting element KE2.
  • the second contacting element KE2 has a recess which is completely surrounded by the external contact connection and internal contact areas AB, VB2 and IB or by the second contacting section K22, the two connecting sections V2 together with the cross-connection web QV2 and thus has a through second contacting element KE2 forms a bordered space R2.
  • the functionality of the gap R2 is described in more detail below with reference to Figures 3 and 4.
  • the internal contact area IB or the first contacting section K21 has four connecting lugs F2, which are distributed in pairs on one of the two connecting sections V2 and are shaped like tines of a fork and extend parallel to one another in the direction of the longitudinal axis L2 of the second contacting element KE2. Connecting lugs F2 are formed in pairs symmetrically to the longitudinal axis L2. Between the four connecting lugs F2, the first contacting section K21 has slots SL2, which form a cross shape in the top view of the second contacting element KE2 and physically separate the four connecting lugs F2 from one another at their exposed ends, so that the four connecting lugs F2 do not touch each other.
  • the connection lugs F2 are bent away from the main plane of the first contacting section K21 in a direction facing away from the main plane of the second contacting section K22, as illustrated in Figure 4.
  • FIG. 3 and 4 each show, in a schematic top view representation and a schematic cross-sectional representation, respectively, a power electronics module LM according to an exemplary embodiment of the invention with the two contacting elements KE1, KE2 from Figures 1 and 2.
  • the power electronics module LM forms a switchable half-bridge circuit with two semiconductor switches T1, T2 connected in series and has a circuit carrier ST, which consists of a DCB substrate (in English “Direct Copper Bonded Substrate”) or an AMB substrate (in English “Active metal brazed substrate”) is formed and on which the half-bridge circuit is formed.
  • a DCB substrate in English “Direct Copper Bonded Substrate”
  • AMB substrate in English “Active metal brazed substrate
  • the circuit carrier ST has an electrically insulating (ceramic) insulating layer IS1, as well as a first and a second conductor track LB1, LB2, which are formed next to each other over a flat area on the same surface of the insulating layer IS1.
  • the two conductor tracks LB1, LB2 or their respective surfaces facing away from the insulating layer IS1 are located in a first contact level E1 of the power electronics module LM or form the first contact level E1.
  • the power electronics module LM also has a first and a second semiconductor switch T1, T2, which in this embodiment are formed as caseless SIC MOSFETs (as naked chips).
  • the first semiconductor switch T1 is placed centrally on the second conductor track LB2 and is sintered or soldered onto the second conductor track LB2 via its first load current connection L11 (drain connection) formed on its underside.
  • the second semiconductor switch T2 is placed centrally on the first conductor track LB1 and is sintered or soldered onto the first conductor track LB1 via its first load current connection L21 (drain connection) formed on its underside.
  • the two semiconductor switches T 1 , T2 each have a second, top-side load current connection L12, L22 (source connection) and several top-side signal connections (gate and Kelvin source connection).
  • the second, top-side load current connections L12, L22 or their respective power connection areas AF2, AF3, and the respective top-side signal connections or their respective signal connection areas SF5, SF7 are located in a second contact level E2 of the power electronics module LM or form the second contact level E2.
  • the previously described first contact level E1 and the second contact level E2 are at different heights of the module LM, as illustrated in Figure 4.
  • the power electronics module LM also has the first contacting element KE1 previously described with reference to FIG. 1, the second contacting element KE2 previously described with reference to FIG. 2, as well as a third and a fourth contacting element KE3, KE4.
  • the third and fourth contacting elements KE3, KE4 are also made of a copper sheet (made of high-purity Copper or a copper alloy) as a one-piece stamped part punched in the appropriate shape.
  • the third contacting element KE3 is placed via its right-hand end region (viewed in FIG. 4) on a left-hand edge region (viewed in FIG. 4) of the second conductor track LB2 next to the first semiconductor switch T1 and is electrically contacted with the second conductor track LB2.
  • the third contacting element KE3 is sintered or soldered onto the second conductor track LB2.
  • the first contacting element KE1 rests via its first contacting section K11 on a right-hand edge region (viewed in FIG. 4) (or on its first power connection area AF1) of the first conductor track LB1 next to the second semiconductor switch T2 and is electrically contacted with the first conductor track LB1.
  • the first contacting element KE1 or its first contacting section K11 is sintered or soldered onto the first conductor track LB1.
  • the first contacting element KE1 rests on the first semiconductor switch T1 via its second contacting section K12 or its four connecting lugs F1 and is electrically contacted with its second load current connection L12.
  • the second contacting section K12 or the four connection lugs F1 are sintered or soldered onto the second load current connection L12. Thanks to the connecting sections V1 bent from the main plane of the first contacting section K11 towards the main plane of the second contacting section K12, the first contacting element KE1 bridges the height difference between the first and the second contact planes E1, E2.
  • the second contacting element KE2 rests on the second semiconductor switch T2 via its first contacting section K21 or its four connecting lugs F2 and is electrically contacted with its second load current connection L22.
  • the first contacting section K21 or the four connection lugs F2 are sintered or soldered onto the second load current connection L22.
  • the second contacting element KE2 rests indirectly on the third contacting element KE3 via its second contacting section K22.
  • There is a between the second and the third contacting elements KE2, KE3 Plate-shaped electrical insulator IS2 is arranged, which physically connects the second and third contacting elements KE2, KE3 to one another and at the same time electrically insulates them from one another.
  • the insulator IS2 is part of a plastic mass MM to be described below (e.g. from a mold compound). Thanks to the connecting sections V2 bent from the main plane of the first contacting section K21 towards the main plane of the second contacting section K22 and the connecting lugs F2 projecting from the main plane of the first contacting section K21 in the direction of the second semiconductor switch T2, the second contacting element KE2 bridges the height difference between the second contact level E2 and the main level of the second contacting section K22.
  • the fourth contacting element KE4 is placed via its left-hand end region (viewed in FIG. 4) on a right-hand edge region (viewed in FIG. 4) of the first conductor track LB1 next to the second semiconductor switch T2 and is electrically contacted with the first conductor track LB1.
  • the fourth contacting element KE4 is sintered or soldered onto the first conductor track LB1.
  • the power electronics module LM also has the previously mentioned plastic mass MM made of an electrically insulating and thermally conductive plastic, which is formed in one piece or in several pieces in cavities on or between the contacting elements KE1, KE2, KE3, KE4.
  • the plastic mass MM On a surface facing away from the circuit carrier ST, the plastic mass MM has a plurality of metal or copper plates M1, M2, M3, M4, M5, each with a signal connection surface SF2, SF3, SF8, SF6, SF9, which, apart from their respective signal connection surface, are made of the plastic mass MM are overmoulded.
  • the copper plates M1, M2, M3, M4, M5 or their signal connection surfaces SF2, SF3, SF8, SF6, SF9 serve to establish signal connections between the two semiconductor switches T1, T2 on the one hand and an external driver Z control circuit of the power module LM, not shown in the figures .
  • Further signal connections can be provided for the transmission of sensor or control signals (also for further circuit components), which are formed, for example, in the form of bonding wires and through the spaces R1, R2 of the first and/or the second contacting element KE1, KE2 are guided. Similarly, depending on requirements, fewer signal connections than previously described can be provided.
  • the copper plates M1, M2, M3, M4, M5 or their signal connection surfaces SF2, SF3, SF8, SF6, SF9 are located in a third contact level E3 of the power electronics module LM or form the third contact level E3.
  • the third contact level E3 lies between the previously described first and the previously described second contact levels E1, E2 and is therefore at a different height than these two contact levels E1, E2.
  • the power electronics module LM also has a plurality of signal connecting elements SV1, SV2, SV3, SV4, SV5, which are formed from bonding wires or bonding ribbons.
  • a first signal connection element SV1 electrically connects a first signal connection area SF1, which is part of the second conductor track LB2 and thus lies in the first contact level E1, with a second signal connection area SF2, which is formed on a first copper plate M1 and in the third contact level E3 of the module LM lies.
  • the first signal connection element SV1 thus bridges the height difference between the first and third contact levels E1, E3.
  • the first signal connection element SV1 is passed through the spaces R1, R2 of the first and second contacting elements KE1, KE2.
  • a second signal connection element SV2 electrically connects the first contacting section K11 of the first contacting element KE1 or a signal connection area SF4 on a surface of the contacting section K11 facing away from the first power connection area AF1 with a third signal connection area SF3, which is formed on a second copper plate M2 and in the third contact level E3 of the LM module.
  • the first signal connection element SV1 thus bridges the height difference between the first contacting element KE1 and the third contact level E3.
  • the second signal connection element SV2 is passed through the gap R2 of the second contacting element KE2.
  • a third signal connection element SV3 connects a fifth signal connection area SF5, which is formed on a signal connection of the first semiconductor switch T1 and thus lies in the second contact level E2, with a sixth signal connection area SF6, which is formed on a further copper plate and thus lies in the third contact level E3 , electric.
  • the third signal connecting element SV3 is guided through the gap R2 of the second contacting element KE2 and bridges the height difference between the two contact levels E2, E3.
  • a fourth signal connection element SV4 connects a seventh signal connection area SF7, which is formed on a signal connection of the second semiconductor switch T2 and thus lies in the second contact level E2, with an eighth signal connection area SF8, which is formed on a further copper plate M3 and thus in the third contact level E3 lies, electrical.
  • the fourth signal connecting element SV4 also bridges the height difference between the two contact levels E2, E3.
  • a fifth signal connection element SV5 electrically connects a ninth signal connection surface SF9, which is formed on a further copper plate M3 and thus lies in the third contact level E3, with a tenth signal connection surface SF10, which is formed on a surface of the second contacting element KE2 facing away from the circuit carrier ST.
  • the power module LM can be molded by a molding compound, the molding compound filling gaps between the previously described components of the module LM and mechanically stabilizing them and at the same time electrically insulating them from each other.
  • Exposed ends of the second, third and fourth contacting elements KE2, KE3, KE4 protrude from the molding compound. These end areas form external power connections (H+ connection, H- connection or phase connection) of the power module LM.
  • the cooling layer KS of the circuit carrier lies ST free from the molding compound.
  • the module LM can be thermally contacted to a cooler via the cooling layer KS.
  • parasitic inductance Due to the overlapping design of the second and third contacting elements KE2, KE3 over almost the entire length of the third contacting element KE3, which form H+/H- connections of the power module LM, parasitic inductance can be reduced.
  • the current routing via the contacting elements KE1, KE2, KE3 and KE4 as stamped or stamped-bent parts and the layered design of the contacting elements KE1, KE2, KE3 and KE4 enable current/signal routing on several levels E1, E2, E3 and thus a reduction in area of the circuit carrier ST, accompanied by a significant reduction in costs and module size for the power module LM.
  • the contacting elements KE1, KE2, KE3 and KE4 can - unlike clips or wavy formed stamped and bent parts - be formed with a sufficiently large cross-sectional area to enable high current flows.
  • the use of the first and second contacting elements KE1, KE2 with the respective gaps R1, R2 allows space-saving signal connections between different contact levels of the module LM, the connections being routed through the gaps R1, R2 and thus via short connecting paths from one level to another level are and are protected from external influences by the two contacting elements KE1, KE2.
  • the spaces R1, R2 also enable easy access for bonding tools when making the signal connections to the (bonding) connection surfaces and subsequent visual inspection of the signal connections.
  • the spaces R1, R2 prevent the formation of air pockets during the molding process, in which the power module LM is remolded with the aforementioned molding compound.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention divulgue un module électronique de puissance (LM), comprenant - une première zone de connexion de puissance (AF1) dans un premier plan de contact électrique (E1) du module (LM) ; - une deuxième zone de connexion de puissance (AF2) dans un deuxième plan de contact électrique (E2) du module (LM) ; - un premier élément de contact de type plaque (KE1) formé d'un seul tenant avec une première section de contact (K11), qui est connectée par contact à la première zone de connexion de puissance (AF1), avec une seconde section de contact (K12), qui est connectée par contact à la seconde zone de connexion de puissance (AF2), et avec deux sections de connexion (V1), qui s'étendent chacune de la première section de contact (K11) à la seconde section de contact (K12) du premier élément de contact (KE1), un évidement étant formé dans le premier élément de contact (KE1) entre les sections de connexion (V1) du premier élément de contact (KE1), l'évidement formant un espace intermédiaire (R1) du premier élément de contact (KE1) ; - un premier élément de connexion de signal (SV1), qui est guidé à travers l'espace intermédiaire (R1) du premier élément de contact (KE1). L'invention concerne également un onduleur comprenant un module électronique de puissance (LM).
PCT/EP2023/070815 2022-07-29 2023-07-27 Module électronique de puissance et onduleur comprenant un module électronique de puissance WO2024023202A1 (fr)

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DE102022207850.0A DE102022207850A1 (de) 2022-07-29 2022-07-29 Leistungselektronikmodul und Inverter mit einem Leistungselektronikmodul
DE102022207850.0 2022-07-29

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220102260A1 (en) * 2020-09-28 2022-03-31 Cree Fayetteville, Inc. Power Module Having an Elevated Power Plane with an Integrated Signal Board and Process of Implementing the Same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2725954B2 (ja) 1992-07-21 1998-03-11 三菱電機株式会社 半導体装置およびその製造方法
DE102013219833B4 (de) 2013-09-30 2020-02-13 Infineon Technologies Ag Halbleitermodul mit leiterplatte und vefahren zur hertellung eines halbleitermoduls mit einer leiterplatte

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220102260A1 (en) * 2020-09-28 2022-03-31 Cree Fayetteville, Inc. Power Module Having an Elevated Power Plane with an Integrated Signal Board and Process of Implementing the Same

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