WO2024021628A1 - 一种改善cvd颗粒不良以及污染不良的方法 - Google Patents

一种改善cvd颗粒不良以及污染不良的方法 Download PDF

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Publication number
WO2024021628A1
WO2024021628A1 PCT/CN2023/081617 CN2023081617W WO2024021628A1 WO 2024021628 A1 WO2024021628 A1 WO 2024021628A1 CN 2023081617 W CN2023081617 W CN 2023081617W WO 2024021628 A1 WO2024021628 A1 WO 2024021628A1
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Prior art keywords
side plate
front side
rear side
cleaning
cvd
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PCT/CN2023/081617
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English (en)
French (fr)
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庄云娟
洪漪
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上海中欣晶圆半导体科技有限公司
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Publication of WO2024021628A1 publication Critical patent/WO2024021628A1/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular to a cleaning method.
  • the pre-CVD cleaning process is realized by a CVD pre-cleaning machine that specifically cleans 8-inch wafers.
  • the cleaning machine grabs the wafer.
  • the manipulator of the cassette and the base of the cleaning tank are matched with the structure of the 8-inch wafer cassette, so it is impossible to put the cassette containing 6-inch wafers directly into the CVD pre-cleaner that specializes in cleaning 8-inch wafers. .
  • the 6-inch wafers that need to be cleaned are poured into a special cassette in advance, and then put into an 8-inch wafer cleaning machine for pre-CVD cleaning; after cleaning, the 6-inch wafers need to be cleaned again. Pour it into a 6-inch special film box.
  • the 6-inch special film box needs to be washed with pure water and dried by the operator in advance before it can be sent to the CVD machine for processing.
  • the above operation process has the following defects:
  • the 6-inch wafer cassette needs to be manually brushed with pure water and dried manually.
  • the wafer cassette is not cleaned cleanly, and particles and contaminants (including metal contamination) are easy to remain in the grooves. Use them to load the cleaned wafers. It is easy to bring contaminants to the wafer surface, which will lead to defective particles and contamination of the wafer after processing.
  • embodiments of the present invention provide a method for improving CVD particle defects and contamination defects, which has solved at least one of the above technical problems.
  • the technical solution of the present invention is: a method for improving CVD particle defects and contamination defects, which is characterized by including the following steps:
  • Step 1 Place the 6-inch film box into the transfer cleaning basket
  • the transfer cleaning flower basket includes a front side plate and a rear side plate arranged front and back, and the front side plate and the rear side plate are connected through a connecting rod;
  • the inner walls of the front side panel and the rear side panel are provided with slots for longitudinally inserting the film cassette
  • the left and right ends of the top of the front side panel and the left and right ends of the top of the rear side panel are detachably connected with robot grab bars;
  • Step 2 The robot grabs the robot grab rod of the transfer cleaning flower basket and positions the transfer cleaning flower basket into the liquid tank of the 8-inch cleaning equipment.
  • Step 3 The robot grabs the robot grab rod of the transfer cleaning flower basket, positions the transfer cleaning flower basket into the cleaning tank of the 8-inch cleaning equipment, and uses pure water to clean it for 360S;
  • Step 4 The robot grabs the robot grab rod of the transfer cleaning flower basket, takes out the transfer cleaning flower basket from the 8-inch cleaning equipment, puts it into the dryer, and spins it at a speed of 700RPM, and the drying time is 300S;
  • Step 5 The robot grabs the grab rod of the transfer cleaning flower basket and takes out the transfer cleaning flower basket from the dryer;
  • Step 6 Take out the 6-inch film box from the transfer cleaning flower basket.
  • the present invention can directly use an 8-inch cleaning machine to clean the 6-inch film cassette, avoiding frequent manual brushing of the film cassette, and saving manpower, material resources and time. This avoids defects caused by manual rewinding of films and defects caused by incomplete manual brushing of the 6-inch film cassette. Poor CVD particles and contamination have been significantly improved.
  • the particle defective rate is controlled within 0.5%.
  • the contamination defective rate is controlled within 0.01%.
  • it also includes a limiting support piece
  • the bottoms of the front side panel and the rear side panel are provided with extension portions extending downward, and the extension portions are detachably connected to the limiting support piece.
  • the temperature of the cleaning liquid in step 2 is 65°C;
  • step three the water temperature is normal temperature.
  • step six a CVD process is performed.
  • the robot grasping rod includes a transversely arranged horizontal rod part and a vertically arranged vertical rod part, and the top of the vertical rod part is fixedly connected to the top of the horizontal rod part;
  • the horizontal bar part is formed by a vertical bar part and an adjacent mounting part and a clamping part;
  • the tops of the front side plate and the rear side plate are close to the mounting part of the robot grab rod and are connected by screws;
  • the inner sides of the front side plate and the rear side plate are close to the vertical rod portion of the robot grasping rod and are connected through screws.
  • a limiting groove is provided at the bottom of the clamping part.
  • front side panel and the rear side panel are both provided with countersunk holes for embedded screws, and the front and rear ends of the connecting rod are detachably connected to the front side panel and the rear side panel through screws respectively.
  • a notch is provided in the center of the bottom of the front side panel and the rear side panel.
  • the front side plate and the rear side plate are provided with water permeable holes.
  • front side panel and the rear side panel are arranged in mirror symmetry from front to back;
  • the left and right sides of the front side plate are provided with protrusions protruding backward;
  • the protrusion is provided with a step protruding to the right, and the step is connected to the connecting rod.
  • the inner sides of the steps on the left and right sides are used to contact the left and right sides of the film box.
  • the protrusions are used to provide space for the stiffeners on the front and rear sides of the film box.
  • Figure 1 is a schematic structural diagram of a transfer cleaning flower basket according to Embodiment 1 of the present invention.
  • 1 is the front side plate
  • 2 is the rear side plate
  • 3 is the robot grabbing rod
  • 4 is the connecting rod
  • 5 is the limiting support piece.
  • a method for improving CVD particle defects and contamination defects includes the following steps:
  • Step 1 Place the 6-inch film box into the transfer cleaning basket
  • Step 2 The robot grabs the robot grab rod of the transfer cleaning flower basket and positions the transfer cleaning flower basket into the liquid tank of the 8-inch cleaning equipment.
  • Step 3 The robot grabs the robot grab rod of the transfer cleaning flower basket, positions the transfer cleaning flower basket into the cleaning tank of the 8-inch cleaning equipment, and uses pure water to clean it for 360S;
  • Step 4 The robot grabs the robot grab rod 3 of the transfer cleaning flower basket, takes the transfer cleaning flower basket out of the 8-inch cleaning equipment, puts it into the dryer, and spins it at a speed of 700RPM, and the drying time is 300S;
  • Step 5 The robot grabs the robot grabbing rod 3 of the transfer cleaning flower basket and takes out the transfer cleaning flower basket from the dryer;
  • Step 6 Take out the 6-inch film box from the transfer cleaning flower basket.
  • the present invention avoids problems caused by film rewinding by optimizing the cleaning process before CVD. Poor CVD particles and contamination have been significantly improved.
  • the particle defective rate is controlled within 0.5%.
  • the contamination defective rate is controlled within 0.01%.
  • the traditional particle defective rate is controlled at around 1.8%.
  • the contamination defect rate is about 1.2%.
  • the temperature of the cleaning solution in step 2 is 65°C;
  • step three the water temperature is normal temperature.
  • step six the CVD process is performed.
  • the transfer cleaning flower basket includes a front side plate 1 and a rear side plate 2 arranged front and back.
  • the front side plate 1 and the rear side plate 2 are connected through a connecting rod 4; the front side plate 1 and the rear side plate 2 are connected to each other through a connecting rod 4.
  • the inner wall of the side panel 2 is provided with a slot for longitudinally inserting the film cassette; the left and right ends of the top of the front side panel 1 and the left and right ends of the top of the rear side panel 2 are detachably connected to a robot gripper.
  • Rod 3 also includes a limiting support piece 5; the bottom of the front side plate 1 and the rear side plate 2 is provided with an extension portion extending downward, and the extension portion is detachably connected to the limiting support piece. It is convenient to ensure the placement effect in the cleaning tank and dryer.
  • the robot gripping rod 3 includes a transverse horizontal bar portion and a vertical vertical bar portion.
  • the top of the vertical bar portion is fixedly connected to the top of the horizontal bar portion; the horizontal bar portion passes through the vertical bar portion. It is a mounting part and a clamping part arranged adjacently; the tops of the front side plate 1 and the rear side plate 2 are close to the mounting part of the robot grab rod 3 and are connected by screws; the front side plate 1 and the inner side of the rear side plate 2 are close to the vertical rod part of the robot grab rod 3 and are connected by screws.
  • a limiting groove is provided at the bottom of the clamping part.
  • the front side panel 1 and the rear side panel 2 are both provided with countersunk holes for inserting screws, and the front and rear ends of the connecting rod 4 are detachably connected to the front side panel 1 and the rear side panel 2 through screws respectively. Easy to assemble. There is a notch in the center of the bottom of the front side panel 1 and the rear side panel 2 . Easy to clean.
  • the front side panel 1 and the rear side panel 2 are provided with water-permeable holes.
  • the front side plate 1 and the rear side plate 2 are arranged in mirror symmetry from front to back; the left and right sides of the front side plate 1 are provided with protrusions protruding backward; the protrusions are provided with steps protruding to the right.
  • the steps are connected to the connecting rod 4.
  • the inner sides of the steps on the left and right sides are used to contact the left and right sides of the film box.
  • the protrusions are used to provide space for the stiffeners on the front and rear sides of the film box.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Cleaning In General (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明涉及机械技术领域。一种改善CVD颗粒不良以及污染不良的方法,包括如下步骤:步骤一,将6寸片盒摆放至中转清洗花篮内;中转清洗花篮包括前后设置的前侧板以及后侧板,前侧板以及后侧板之间通过连接杆相连;前侧板以及后侧板的内壁上开设有用于纵向插入片盒的插槽;前侧板的顶部的左右两端以及后侧板的顶部的左右两端均可拆卸连接有机械手抓取杆;步骤二,摆放至8寸清洗设备的药液槽内;步骤三,使用纯水清洗360S;步骤四,取出放入甩干机;步骤五,从甩干机中取出;步骤六,将6寸片盒从中转清洗花篮中取出。本发明通过优化CVD前洗净过程的优化,避免了因人为倒片产生的不良。

Description

一种改善CVD颗粒不良以及污染不良的方法 技术领域
本发明涉及半导体技术领域,具体涉及清洗方法。
背景技术
CVD前洗净这道工序是通过专门清洗8寸晶圆的CVD前洗净机来实现的,但是,当6寸晶圆需要进行CVD前洗净这道工序时,由于洗净机抓取片盒的机械手以及清洗槽底座均是与8寸片盒的构造匹配的,所以是无法将装有6寸晶圆的片盒直接投入到专门清洗8寸晶圆的CVD前洗净机中去的。
传统操作时,事先将需要清洗的6寸晶圆倒入至专用片盒中,之后再投入到8寸晶圆洗净机内进行CVD前洗净;清洗干净之后的6寸晶圆,需要再次倒入到6寸专用片盒,6寸专用片盒需要操作人员提前用纯水清洗以及甩干后才能被送至CVD机台上加工。
上述操作过程,存有如下缺陷:
1)6寸片盒需要人工手动用纯水刷洗,手动甩干,存在片盒刷洗不干净,沟槽内容易残留颗粒和污染物(包括金属污染),用它们装被清洗干净的晶圆,容易将污染物带到晶圆表面,会导致晶圆在加工后出现颗粒不良和污染不良。
2)由于8寸洗净机不能清洗装有6寸晶圆的6寸片盒,所以,目前需要将6寸晶圆转到中转片盒中去,清洗结束之后,再将6寸晶圆人工导入到6寸专用片盒。而在人工倒片这一步,由于空气中、倒片器上、人的衣袖上、手套上都含有大量的颗粒和污染物,所以很容易造成晶圆表面被污染,最终导致晶圆在加工后出现颗粒不良和污染不良。
3)来回转换片盒(倒片),人工刷洗6寸片盒、人工甩干6寸片盒,浪费大量的人工,占用较长的作业时间。
发明内容
针对现有技术存在的问题,本发明的实施例提供一种改善CVD颗粒不良以及污染不良的方法,已解决上述至少一个技术问题。
本发明的技术方案是:一种改善CVD颗粒不良以及污染不良的方法,其特征在于,包括如下步骤:
步骤一,将6寸片盒摆放至中转清洗花篮内;
所述中转清洗花篮包括前后设置的前侧板以及后侧板,所述前侧板以及所述后侧板之间通过连接杆相连;
所述前侧板以及所述后侧板的内壁上开设有用于纵向插入片盒的插槽;
所述前侧板的顶部的左右两端以及所述后侧板的顶部的左右两端均可拆卸连接有机械手抓取杆;
步骤二,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮定位摆放至8寸清洗设备的药液槽内,药液槽内的药液为浓度比氨水:双氧水:水=1:4:20的清洗液,清洗时间为360S;
步骤三,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮定位摆放至8寸清洗设备的清洗槽内,使用纯水清洗360S;
步骤四,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮从8寸清洗设备中取出放入甩干机,以700RPM的转速进行甩干,甩干时间为300S;
步骤五,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮从甩干机中取出;
步骤六,将6寸片盒从中转清洗花篮中取出。
本发明通过优化CVD前洗净过程的优化,可以直接使用8寸清洗机清洗6寸片盒,避免了频繁手动刷洗片盒,节省了人力,物力和时间。避免了因人为倒片产生的不良,避免了因人为刷洗6寸片盒刷不彻底导致的不良。CVD颗粒不良和污染不良得到明显改善。颗粒不良率控制在了0.5%以内。污染不良率控制在了0.01%以内。
进一步优选地,还包括限位支撑片;
所述前侧板以及所述后侧板的底部设有向下延伸的延伸部,所述延伸部与所述限位支撑片可拆卸连接。
便于保证在清洗槽内以及甩干机内的摆放效果。
进一步优选地,步骤二中的清洗液为温度为65℃;
步骤三中,水温为常温。
进一步优选地,步骤六之后,进行CVD工序。
进一步优选地,所述机械手抓取杆包括横向设置的横杆部以及竖直设置的竖杆部,所述竖杆部的顶部与所述横杆部的顶部固定连接;
所述横杆部通过竖杆部分为相邻设置的安装部以及夹持部;
所述前侧板以及所述后侧板的顶部紧贴机械手抓取杆的所述安装部,并通过螺钉相连;
所述前侧板以及所述后侧板的内侧紧贴机械手抓取杆的所述竖杆部,并通过螺钉相连。
进一步优选地,所述夹持部的底部开设有限位槽。
进一步优选地,所述前侧板以及所述后侧板均开设有嵌入螺钉的沉孔,所述连接杆的前后两端分别通过螺钉与所述前侧板以及后侧板可拆卸连接。
便于组装。
进一步优选地,所述前侧板以及所述后侧板的底部中央开设有缺口。
便于清洗。
进一步优选地,所述前侧板以及所述后侧板上开设有透水孔。
进一步优选地,所述前侧板以及所述后侧板前后镜像对称设置;
所述前侧板的左右两侧设有向后凸出的突起;
所述突起设有向右突出的台阶,所述台阶与所述连接杆相连。
以左右两侧的台阶的内侧用于接触片盒的左右两侧。突起用于提供片盒前后两侧的加强筋让位。
附图说明
图1是本发明具体实施例1中转清洗花篮的结构示意图。
图中:1为前侧板,2为后侧板,3为机械手抓取杆,4为连接杆,5为限位支撑片。
具体实施方式
下面结合附图对本发明做进一步的说明。
参见图1,具体实施例1,一种改善CVD颗粒不良以及污染不良的方法,包括如下步骤:
步骤一,将6寸片盒摆放至中转清洗花篮内;
步骤二,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮定位摆放至8寸清洗设备的药液槽内,药液槽内的药液为浓度比氨水:双氧水:水=1:4:20的清洗液,清洗时间为360S;
步骤三,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮定位摆放至8寸清洗设备的清洗槽内,使用纯水清洗360S;
步骤四,机械手抓取中转清洗花篮的机械手抓取杆3将中转清洗花篮从8寸清洗设备中取出放入甩干机,以700RPM的转速进行甩干,甩干时间为300S;
步骤五,机械手抓取中转清洗花篮的机械手抓取杆3将中转清洗花篮从甩干机中取出;
步骤六,将6寸片盒从中转清洗花篮中取出。
本发明通过优化CVD前洗净过程的优化,避免了倒片导致问题。CVD颗粒不良和污染不良得到明显改善。颗粒不良率控制在了0.5%以内。污染不良率控制在了0.01%以内。传统的颗粒不良率控制在了1.8%左右。污染不良率在1.2%左右。
步骤二中的清洗液为温度为65℃;
步骤三中,水温为常温。
步骤六之后,进行CVD工序。
所述中转清洗花篮包括前后设置的前侧板1以及后侧板2,所述前侧板1以及所述后侧板2之间通过连接杆4相连;所述前侧板1以及所述后侧板2的内壁上开设有用于纵向插入片盒的插槽;所述前侧板1的顶部的左右两端以及所述后侧板2的顶部的左右两端均可拆卸连接有机械手抓取杆3;还包括限位支撑片5;所述前侧板1以及所述后侧板2的底部设有向下延伸的延伸部,所述延伸部与所述限位支撑片可拆卸连接。便于保证在清洗槽内以及甩干机内的摆放效果。
所述机械手抓取杆3包括横向设置的横杆部以及竖直设置的竖杆部,所述竖杆部的顶部与所述横杆部的顶部固定连接;所述横杆部通过竖杆部分为相邻设置的安装部以及夹持部;所述前侧板1以及所述后侧板2的顶部紧贴机械手抓取杆3的所述安装部,并通过螺钉相连;所述前侧板1以及所述后侧板2的内侧紧贴机械手抓取杆3的所述竖杆部,并通过螺钉相连。所述夹持部的底部开设有限位槽。
所述前侧板1以及所述后侧板2均开设有嵌入螺钉的沉孔,所述连接杆4的前后两端分别通过螺钉与所述前侧板1以及后侧板2可拆卸连接。便于组装。所述前侧板1以及所述后侧板2的底部中央开设有缺口。便于清洗。所述前侧板1以及所述后侧板2上开设有透水孔。所述前侧板1以及所述后侧板2前后镜像对称设置;所述前侧板1的左右两侧设有向后凸出的突起;所述突起设有向右突出的台阶,所述台阶与所述连接杆4相连。以左右两侧的台阶的内侧用于接触片盒的左右两侧。突起用于提供片盒前后两侧的加强筋让位。
以上仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种改善CVD颗粒不良以及污染不良的方法,其特征在于,包括如下步骤:
    步骤一,将6寸片盒摆放至中转清洗花篮内;
    所述中转清洗花篮包括前后设置的前侧板以及后侧板,所述前侧板以及所述后侧板之间通过连接杆相连;
    所述前侧板以及所述后侧板的内壁上开设有用于纵向插入片盒的插槽;
    所述前侧板的顶部的左右两端以及所述后侧板的顶部的左右两端均可拆卸连接有机械手抓取杆;
    步骤二,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮定位摆放至8寸清洗设备的药液槽内,药液槽内的药液为浓度比氨水:双氧水:水=1:4:20的清洗液,清洗时间为360S;
    步骤三,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮定位摆放至8寸清洗设备的清洗槽内,使用纯水清洗360S;
    步骤四,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮从8寸清洗设备中取出放入甩干机,以700RPM的转速进行甩干,甩干时间为300S;
    步骤五,机械手抓取中转清洗花篮的机械手抓取杆将中转清洗花篮从甩干机中取出;
    步骤六,将6寸片盒从中转清洗花篮中取出。
  2. 根据权利要求1所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:还包括限位支撑片;
    所述前侧板以及所述后侧板的底部设有向下延伸的延伸部,所述延伸部与所述限位支撑片可拆卸连接。
  3. 根据权利要求1所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:步骤二中的清洗液为温度为65℃;
    步骤三中,水温为常温。
  4. 根据权利要求1所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:步骤六之后,进行CVD工序。
  5. 根据权利要求1所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:所述机械手抓取杆包括横向设置的横杆部以及竖直设置的竖杆部,所述竖杆部的顶部与所述横杆部的顶部固定连接;
    所述横杆部通过竖杆部分为相邻设置的安装部以及夹持部;
    所述前侧板以及所述后侧板的顶部紧贴机械手抓取杆的所述安装部,并通过螺钉相连;
    所述前侧板以及所述后侧板的内侧紧贴机械手抓取杆的所述竖杆部,并通过螺钉相连。
  6. 根据权利要求5所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:所述夹持部的底部开设有限位槽。
  7. 根据权利要求1所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:所述前侧板以及所述后侧板均开设有嵌入螺钉的沉孔,所述连接杆的前后两端分别通过螺钉与所述前侧板以及后侧板可拆卸连接。
  8. 根据权利要求1所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:所述前侧板以及所述后侧板的底部中央开设有缺口。
  9. 根据权利要求1所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:所述前侧板以及所述后侧板上开设有透水孔。
  10. 根据权利要求1所述的一种改善CVD颗粒不良以及污染不良的方法,其特征在于:所述前侧板以及所述后侧板前后镜像对称设置;
    所述前侧板的左右两侧设有向后凸出的突起;
    所述突起设有向右突出的台阶,所述台阶与所述连接杆相连。
PCT/CN2023/081617 2022-07-26 2023-03-15 一种改善cvd颗粒不良以及污染不良的方法 WO2024021628A1 (zh)

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