WO2024016905A1 - Module optique et ensemble laser - Google Patents

Module optique et ensemble laser Download PDF

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Publication number
WO2024016905A1
WO2024016905A1 PCT/CN2023/100069 CN2023100069W WO2024016905A1 WO 2024016905 A1 WO2024016905 A1 WO 2024016905A1 CN 2023100069 W CN2023100069 W CN 2023100069W WO 2024016905 A1 WO2024016905 A1 WO 2024016905A1
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WO
WIPO (PCT)
Prior art keywords
electrode layer
layer
metal layer
positive electrode
negative electrode
Prior art date
Application number
PCT/CN2023/100069
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English (en)
Chinese (zh)
Inventor
陈骁
阎世奇
王扩
刘志程
聂晓晓
李静思
Original Assignee
青岛海信宽带多媒体技术有限公司
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Publication of WO2024016905A1 publication Critical patent/WO2024016905A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of optical fiber communication technology, and in particular, to an optical module and a laser component.
  • optical communication technology has many advantages such as fast speed, high bandwidth, and low installation cost. , has gradually replaced traditional electrical signal communications in various industries.
  • optical modules are tools for realizing mutual conversion of photoelectric signals and are one of the key components in optical communication equipment. With the development needs of optical communication technology, the transmission rate of optical modules continues to increase.
  • the present disclosure provides an optical module, including: a circuit board; a light emitting component, electrically connected to the circuit board, and configured to emit an optical signal; wherein the light emitting component includes a laser component, and the laser component includes:
  • the substrate has a positive electrode layer and a negative electrode layer on the top surface. There is a gap between the positive electrode layer and the negative electrode layer. Several first metal layers and several second metal layers are provided in the gaps. One end of the first metal layer is electrically connected to the positive electrode layer and the third metal layer is electrically connected to the positive electrode layer. The other end of one metal layer extends to the negative electrode layer, the second metal layer is electrically connected to the negative electrode layer, and the other end of the second metal layer extends to the positive electrode layer.
  • the first metal layer and the second metal layer are alternately arranged; laser chip, mounting arrangement On the negative electrode layer, the positive electrode wire is connected to the positive electrode layer; at least one of the positive electrode layer and the negative electrode layer is provided with a missing corner area.
  • the present disclosure provides a laser assembly, including: a substrate, a positive electrode layer and a negative electrode layer provided on the top surface, a gap is provided between the positive electrode layer and the negative electrode layer, and several first metal layers and several second metal layers are provided in the gap. , one end of the first metal layer is electrically connected to the positive electrode layer and the other end of the first metal layer extends to the negative electrode layer, the second metal layer is electrically connected to the negative electrode layer and the other end of the second metal layer extends to the positive electrode layer, the first metal layer and The second metal layer is arranged in a staggered manner; the laser chip is mounted on the negative electrode layer, and the positive electrode wire is connected to the positive electrode layer.
  • the laser assembly includes a substrate and a laser chip.
  • the top surface of the substrate is provided with an anode layer and a cathode layer.
  • the laser chip is mounted on the anode layer of the substrate, and the anode of the laser chip is wired and connected.
  • An interval is provided between the positive electrode layer and the negative electrode layer, and a plurality of staggered first metal layers and second metal layers are provided in the interval, and one end of the first metal layer is electrically connected to the positive electrode layer, and the other end extends to the negative electrode layer but is not connected to the negative electrode layer.
  • one end of the second metal layer is electrically connected to the negative electrode layer, and the other end extends toward the positive electrode layer but is not connected to the positive electrode layer.
  • the first metal layer and the second metal layer interlaced between the positive electrode layer and the negative electrode layer effectively form a capacitor.
  • the equivalent capacitor is connected in parallel with the laser chip, which can facilitate the formation of an LC resonance with appropriate amplitude with the positive electrode of the laser chip. This can increase the bandwidth of the laser component within a suitable frequency range and ensure the flatness of the optical module bandwidth curve.
  • Figure 1 is a partial structural schematic diagram of an optical communication system provided according to some embodiments of the present disclosure
  • Figure 2 is a partial structural diagram of a host computer provided according to some embodiments of the present disclosure.
  • Figure 3 is a structural diagram of an optical module provided according to some embodiments of the present disclosure.
  • Figure 4 is an exploded view of an optical module provided according to some embodiments of the present disclosure.
  • Figure 5 is an outline structural diagram of a light emitting component provided according to some embodiments of the present disclosure.
  • Figure 6 is an exploded schematic diagram of a light emitting component provided according to some embodiments of the present disclosure.
  • Figure 7 is a schematic structural diagram of a laser component according to some embodiments of the present disclosure.
  • Figure 8 is a schematic structural diagram of another laser assembly according to some embodiments of the present disclosure.
  • Figure 9 is an exploded schematic diagram of another laser assembly provided according to some embodiments of the present disclosure.
  • Figure 10 is an exploded schematic diagram of a substrate provided according to some embodiments of the present disclosure.
  • Figure 11 is a schematic diagram of wiring of a substrate according to some embodiments of the present disclosure.
  • Figure 12 is a schematic structural diagram of a first substrate provided according to some embodiments of the present disclosure.
  • Figure 13 is a schematic structural diagram of a second substrate provided according to some embodiments of the present disclosure.
  • Figure 14 is a schematic structural diagram of a third substrate provided according to some embodiments of the present disclosure.
  • Figure 15 is a schematic structural diagram of a fourth substrate provided according to some embodiments of the present disclosure.
  • Figure 16 is a bandwidth curve diagram of a laser component corresponding to different capacitance values according to some embodiments of the present disclosure
  • Figure 17 is a partial structural schematic diagram of a light emitting component provided according to some embodiments of the present disclosure.
  • Figure 18 is a schematic diagram 2 of a partial structure of a light emitting component provided according to some embodiments of the present disclosure
  • Figure 19 is an exploded schematic diagram of a partial structure of a light emitting component provided according to some embodiments of the present disclosure.
  • Figure 20 is a cross-sectional view of a partial structure of a light emitting component according to some embodiments of the present disclosure.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.
  • At least one of A, B and C has the same meaning as “at least one of A, B or C” and includes the following combinations of A, B and C: A only, B only, C only, A and B The combination of A and C, the combination of B and C, and the combination of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • optical communication technology in order to establish information transfer between information processing devices, information needs to be loaded onto light and the propagation of light is used to achieve information transfer.
  • light loaded with information is an optical signal.
  • Optical signals can reduce the loss of optical power when transmitted in information transmission equipment, so high-speed, long-distance, and low-cost information transmission can be achieved.
  • the signals that information processing equipment can identify and process are electrical signals.
  • Information processing equipment usually includes optical network terminals (Optical Network Unit, ONU), gateways, routers, switches, mobile phones, computers, servers, tablets, TVs, etc.
  • Information transmission equipment usually includes optical fibers and optical waveguides.
  • Optical modules can realize the mutual conversion of optical signals and electrical signals between information processing equipment and information transmission equipment.
  • at least one of the optical signal input end or the optical signal output end of the optical module is connected to an optical fiber, and at least one of the electrical signal input end or the electrical signal output end of the optical module is connected to an optical network terminal; the first light from the optical fiber The signal is transmitted to the optical module, and the optical module converts the first optical signal into a first electrical signal, and transmits the first electrical signal to the optical network terminal; the second electrical signal from the optical network terminal is transmitted to the optical module, and the optical module Convert the second electrical signal into a second optical signal, and transmit the second optical signal to the optical fiber.
  • the information processing equipment directly connected to the optical module is called the host computer of the optical module.
  • the optical signal input end or the optical signal output end of the optical module may be called an optical port
  • the electrical signal input end or the electrical signal output end of the optical module may be called an electrical port.
  • Figure 1 is a partial structural diagram of an optical communication system provided according to some embodiments of the present disclosure.
  • the optical communication system mainly includes remote information processing equipment 1000, local information processing equipment 2000, host computer 100, Optical module 200, optical fiber 101 and network cable 103.
  • One end of the optical fiber 101 extends toward the remote information processing device 1000, and the other end of the optical fiber 101 is connected to the optical module 200 through the optical port of the optical module 200.
  • the optical signal can be totally reflected in the optical fiber 101, and the propagation of the optical signal in the total reflection direction can almost maintain the original optical power.
  • the optical signal undergoes total reflection multiple times in the optical fiber 101 to transmit the information from the remote information processing device 1000.
  • the optical signal is transmitted to the optical module 200, or the optical signal from the optical module 200 is transmitted to the remote information processing device 1000, thereby realizing long-distance, low-power loss information transmission.
  • the optical communication system may include one or more optical fibers 101, and the optical fibers 101 and the optical module 200 may be detachably connected or fixedly connected.
  • the host computer 100 is configured to provide data signals to the optical module 200 , or to receive data signals from the optical module 200 , or to monitor or control the working status of the optical module 200 .
  • the host computer 100 includes a housing that is substantially rectangular parallelepiped, and an optical module interface 102 provided on the housing.
  • the optical module interface 102 is configured to access the optical module 200 so that the host computer 100 and the optical module 200 establish a one-way or two-way electrical signal connection.
  • the host computer 100 also includes an external electrical interface, which can be connected to an electrical signal network.
  • the external electrical interface includes a universal serial bus interface (Universal Serial Bus, USB) or a network cable interface 104.
  • the network cable interface 104 is configured to connect to the network cable 103, so that the host computer 100 and the network cable 103 can establish a one-way or two-way electrical connection. signal connection.
  • One end of the network cable 103 is connected to the local information processing device 2000, and the other end of the network cable 103 is connected to the host computer 100, so as to establish an electrical signal connection between the local information processing device 2000 and the host computer 100 through the network cable 103.
  • the third electrical signal sent by the local information processing device 2000 is transmitted to the host computer 100 through the network cable 103.
  • the host computer 100 generates a second electrical signal according to the third electrical signal, and the second electrical signal from the host computer 100 is transmitted to the optical system.
  • Module 200 The optical module 200 converts the second electrical signal into a second optical signal, and transmits the second optical signal to the optical fiber 101.
  • the second optical signal is transmitted to the remote information processing device 1000 in the optical fiber 101.
  • the first optical signal from the remote information processing device 1000 is propagated through the optical fiber 101, and the first optical signal from the optical fiber 101 is transmitted to the optical module 200.
  • the optical module 200 converts the first optical signal into a first electrical signal.
  • the module 200 transmits the first electrical signal to the host computer 100 , the host computer 100 generates a fourth electrical signal according to the first electrical signal, and transmits the fourth electrical signal to the local information processing device 2000 .
  • the optical module is a tool to realize the mutual conversion of optical signals and electrical signals. During the above-mentioned conversion process of optical signals and electrical signals, the information does not change, and the encoding and decoding methods of the information can change.
  • the host computer 100 also includes optical line terminals (Optical Line Terminal, OLT), optical network equipment (Optical Network Terminal, ONT), or data center servers, etc.
  • OLT optical Line Terminal
  • ONT optical network equipment
  • data center servers etc.
  • FIG. 2 is a partial structural diagram of a host computer provided according to some embodiments of the present disclosure.
  • the host computer 100 also includes a PCB circuit board 105 provided in the housing, a cage 106 provided on the surface of the PCB circuit board 105, a radiator 107 provided on the cage 106, and a heat sink 107 provided inside the cage 106.
  • electrical connector is configured to be connected to the electrical port of the optical module 200; the heat sink 107 has fins and other protruding structures that increase the heat dissipation area.
  • the optical module 200 is inserted into the cage 106 of the host computer 100, and the optical module 200 is fixed by the cage 106.
  • the heat generated by the optical module 200 is conducted to the cage 106, and then diffused through the heat sink 107.
  • the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106, so that the optical module 200 is connected to the cage 106.
  • the host computer 100 establishes a two-way electrical signal connection.
  • the optical port of the optical module 200 is connected to the optical fiber 101, so that the optical module 200 and the optical fiber 101 establish a bidirectional optical signal connection.
  • FIG. 3 is a structural diagram of an optical module provided according to some embodiments of the present disclosure
  • FIG. 4 is an exploded view of an optical module provided according to some embodiments of the present disclosure.
  • the optical module 200 includes a shell, a circuit board 300 disposed in the shell, a light emitting component 400 and a light receiving component.
  • the housing includes an upper housing 201 and a lower housing 202.
  • the upper housing 201 is covered on the lower housing 202 to form the above-mentioned housing with two openings; the outer contour of the housing generally presents a square body.
  • the lower case 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021; the upper case 201 includes a cover plate 2011, and the cover plate 2011 is closed On the two lower side plates 2022 of the lower housing 202, the above-mentioned housing is formed.
  • the lower case 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021;
  • the upper case 201 includes a cover plate 2011 and two lower side plates 2022 located on both sides of the cover plate 2011.
  • the two upper side plates of the cover plate 2011 are vertically arranged, and are combined with the two lower side plates 2022 to realize that the upper housing 201 is covered on the lower housing 202 .
  • the direction of the connection line between the two openings 204 and 205 may be consistent with the length direction of the optical module 200 , or may be inconsistent with the length direction of the optical module 200 .
  • the opening 204 is located at the end of the optical module 200 (the right end of FIG. 3 ), and the opening 205 is also located at the end of the optical module 200 (the left end of FIG. 3 ).
  • the opening 204 is located at an end of the optical module 200 and the opening 205 is located at a side of the optical module 200 .
  • the opening 204 is an electrical port, and the golden finger of the circuit board 300 extends from the electrical port and is inserted into the host computer (for example, the optical network terminal 100); the opening 205 is an optical port, configured to access the external optical fiber 101, so that the external optical fiber 101 connects the light emitting component 400 and the light receiving component inside the optical module 200.
  • the assembly method of combining the upper housing 201 and the lower housing 202 is used to facilitate the installation of the light emitting component 400 and the light receiving component of the circuit board 300 into the housing. These components are formed by the upper housing 201 and the lower housing 202. Encapsulated protection. In addition, when assembling components such as the circuit board 300 and the optical transceiver assembly 207, the deployment of positioning components, heat dissipation components, and electromagnetic shielding components of these components is facilitated, which is conducive to automated production.
  • the upper housing 201 and the lower housing 202 are generally made of metal materials, which facilitates electromagnetic shielding and heat dissipation.
  • the optical module 200 further includes an unlocking component 500 located outside its housing.
  • the unlocking component 500 is configured to achieve a fixed connection between the optical module 200 and the host computer, or to release the connection between the optical module 200 and the host computer. fixed connection.
  • the unlocking component 500 is located on the outer walls of the two lower side plates 2022 of the lower housing 202 and has a snap component that matches the host computer cage (for example, the cage 106 of the optical network terminal 100).
  • the optical module 200 is inserted into the cage of the host computer, the optical module 200 is fixed in the cage of the host computer by the engaging parts of the unlocking part.
  • the engaging parts of the unlocking part 500 move accordingly, thereby changing the card.
  • the connection relationship between the coupling component and the host computer is released to release the engagement relationship between the optical module 200 and the host computer, so that the optical module 200 can be pulled out from the cage of the host computer.
  • the circuit board 300 includes circuit wiring, electronic components and chips.
  • the electronic components and chips are connected together according to the circuit design through the circuit wiring to realize functions such as power supply, electrical signal transmission, and grounding.
  • Electronic components include, for example, capacitors, resistors, transistors, and metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET).
  • Chips include, for example, Microcontroller Unit (MCU), laser driver chip, limiting amplifier (TIA), clock and data recovery (Clock and Data Recovery, CDR) chip, power management chip, digital signal processing (Digital Signal) Processing, DSP) chip.
  • MCU Microcontroller Unit
  • TAA limiting amplifier
  • CDR clock and Data Recovery
  • DSP digital signal processing
  • the circuit board 300 is generally a rigid circuit board. Due to its relatively hard material, the rigid circuit board can also perform a load-bearing function. For example, the rigid circuit board can smoothly carry the above-mentioned electronic components and chips; when the optical transceiver component is located on the circuit board, the rigid circuit board The circuit board can also provide smooth loading; the rigid circuit board can also be inserted into the electrical connector in the host computer cage.
  • the circuit board 300 also includes gold fingers formed on its end surface, and the gold fingers are composed of a plurality of mutually independent pins.
  • the circuit board 300 is inserted into the cage 106 and electrically connected to the electrical connector in the cage 106 by the gold finger.
  • the golden fingers can be provided only on one side of the circuit board 300 (for example, the upper surface shown in FIG. 4 ), or can be provided on the upper and lower surfaces of the circuit board 300 to adapt to situations where a large number of pins are required.
  • the golden finger is configured to establish an electrical connection with the host computer to realize power supply, grounding, two-wire synchronous serial (Inter-Integrated Circuit, I2C) signal transmission, data signal transmission, etc.
  • I2C Inter-Integrated Circuit
  • flexible circuit boards are also used in some optical modules.
  • Flexible circuit boards are generally used in conjunction with rigid circuit boards as a supplement to rigid circuit boards.
  • At least one of the light emitting component 400 or the light receiving component is located on a side of the circuit board 300 away from the gold finger.
  • the light emitting component 400 and the light receiving component are physically separated from the circuit board 300 and then electrically connected to the circuit board 300 through corresponding flexible circuit boards or electrical connectors.
  • At least one of the light emitting component 400 or the light receiving component may be directly disposed on the circuit board 300 .
  • at least one of the light emitting part 400 or the light receiving part may be provided on the surface of the circuit board 300 or the side of the circuit board 300 .
  • Light emitting component Light emitting component Light emitting component.
  • Figure 5 is an outline structural diagram of a light emitting component according to some embodiments of the present disclosure.
  • the light emitting component 400 provided in this embodiment includes a tube base 410, a tube cap 420, and other components provided in the tube cap 420 and the tube base 410.
  • the tube cap 420 is covered at one end of the tube base 410.
  • the base 410 includes a number of pins, and the pins are configured to realize the electrical connection between the flexible circuit board and other electrical devices in the light emitting component 400, and thereby realize the electrical connection between the light emitting component 400 and the circuit board 300.
  • This embodiment is only shown in the figure. Take the structure shown in 5 as an example.
  • Figure 6 is an exploded schematic diagram of a light emitting component according to some embodiments of the present disclosure.
  • the light emitting component 400 includes a laser assembly 430 configured to generate an optical signal and transmit the generated optical signal through the tube cap 420 .
  • the use form of the laser component 430 is not limited to the structure shown in FIG. 6 , and the laser component 430 can also be directly mounted on the circuit board 300 .
  • FIG. 7 is a schematic structural diagram of a laser component according to some embodiments of the present disclosure.
  • the laser component 430 includes a laser chip 431 and a substrate 432.
  • the upper surface of the substrate 432 is laid with a circuit.
  • the laser chip 431 is disposed on the top surface of the substrate 432 and connected to the corresponding circuits on the substrate 432 through wiring.
  • the laser chip 431 can be a high-speed laser chip such as a DFB chip; the substrate 432 and the bonding wire between the laser chip 431 and the substrate 432 are in a packaging structure, so that the DFB chip and the substrate 432 are packaged to form a DFB laser component.
  • the structure of the laser component 430 is not limited to the structure shown in FIG. 7 , and can also be a laser component with other structural forms;
  • the substrate 432 can be a ceramic substrate, such as AlN ceramic, but is not limited to a ceramic substrate.
  • the semiconductor laser chip is a key component of the optical module. It uses semiconductor materials as the working substance to generate laser light. With the development of optical communication technology, the transmission rate of optical modules continues to increase, and the requirements for the high-frequency performance of the semiconductor laser chip are increasing. high.
  • the high-frequency modulation performance of the semiconductor laser chip is determined by the high-frequency response of the active area and the high-speed transmission structure. Therefore, the high-speed transmission structure is crucial for high-bandwidth and ultra-high-bandwidth performance. Any impedance mismatch or resonance effect will be serious. Deteriorating the performance of the entire product, causing the semiconductor laser chip to be unable to achieve high-speed applications.
  • Transistor Out-line is a common packaging form for semiconductor laser chips. It has the characteristics of simple manufacturing process, low cost, flexible and convenient use.
  • TO is usually electrically connected to the circuit board inside the optical module through a flexible circuit board. Since the high-speed signals inside the TO take a coaxial line structure, and the high-speed signals on the flexible circuit board take a microstrip line structure, there is a gap between the TO and the optical module. High signal transmission at the connections between flexible circuit boards will cause impedance mismatch, and improper handling of the return path will also cause resonance effects, which will in turn degrade the quality of the high-speed signals of the semiconductor laser chip, resulting in a reduction in the 3dB bandwidth of the semiconductor laser chip. .
  • the laser component 430 is electrically connected to the circuit board 300 through a flexible circuit board.
  • the high-speed signals inside the laser component 430 take a coaxial line structure, and the high-speed signals on the flexible circuit board take a microstrip line structure.
  • the laser chip 431 and the substrate 432 The wiring between them forms a parasitic inductance. Therefore, high signal transmission at the connection between the laser component 430 and the flexible circuit board will cause an impedance mismatch, which will in turn consume the quality of the high-speed signal of the laser component 430 and cause the laser component 430 to malfunction. 3dB bandwidth reduction.
  • the operating temperature of the laser component 430 is relatively high, such as 85°C, the high-speed signal quality loss of the laser component 430 is more serious.
  • the high-frequency performance of the laser chip 431 is not excellent enough, the performance of the light-emitting component 400 and the laser chip 431 in the optical module will be greatly limited, resulting in a reduction in the production yield of the optical module.
  • FIG. 8 is a schematic structural diagram of another laser assembly provided according to some embodiments of the present disclosure
  • FIG. 9 is an exploded schematic view of another laser assembly provided according to some embodiments of the present disclosure.
  • the laser assembly 430 provided by this embodiment, the laser chip 431 is arranged on the top surface of the substrate 432, and the signal wiring is arranged on the substrate 432; the anode of the laser chip 431 is located on the top of the laser chip 431.
  • the substrate 432 is connected through wiring, and high-frequency signals are received through the substrate 432 .
  • a positive electrode layer 4321 and a negative electrode layer 4322 are provided on the top surface of the substrate 432.
  • the positive electrode layer 4321 is located on one side of the top surface of the substrate 432, and the negative electrode layer 4322 is located on the other side of the top surface of the substrate 432.
  • the positive electrode layer 4321 and the negative electrode layer 4322 are provided between Spacing 4323, the spacing 4323 is configured to achieve isolation between the positive electrode layer 4321 and the negative electrode layer 4322.
  • the laser chip 431 is mounted on the negative electrode layer 4322, and the negative electrode of the laser chip 431 is located on the back of the laser chip 431. When the laser chip 431 is mounted on the negative electrode layer 4322, the negative electrode of the laser chip 431 is electrically connected to the negative electrode layer 4322.
  • the positive wire of the laser chip 431 is connected to the positive layer 4321.
  • first metal layers 4324 and several second metal layers 4325 are provided in the interval 4323.
  • One end of the first metal layer 4324 is electrically connected to the positive electrode layer 4321, and the other end extends to the negative electrode layer 4322 but is not connected to the negative electrode layer 4322.
  • the metal layer 4325 is electrically connected to the negative electrode layer 4322, and the other end extends toward the positive electrode layer 4321 but is not connected to the positive electrode layer 4321.
  • the first metal layer 4324 and the second metal layer 4325 are arranged in a staggered manner.
  • the first metal layer 4324 and the second metal layer 4325 are not connected.
  • the second metal layer 4325 is disposed between adjacent first metal layers 4324
  • the first metal layer 4324 is disposed between adjacent second metal layers 4325, that is, the first metal layer 4324 and the second metal layer 4325 intersect.
  • several first metal layers 4324 and several second metal layers 4325 are parallel to each other, that is, each first metal layer 4324 and each second metal layer 4325 are parallel to each other.
  • the alternately arranged first metal layer 4324 and the second metal layer 4325 form an equivalent capacitance, which is connected in parallel with the laser chip 431, and the wiring between the positive electrode of the laser chip 431 and the positive electrode layer 4321 forms a parasitic inductance.
  • the equivalent capacitance and parasitic inductance can form an LC resonance with a suitable amplitude, so as to increase the bandwidth of the laser component 430 within a suitable frequency range and ensure the flatness of the bandwidth curve.
  • the LC resonance effect in the light emitting component 400 can match the resonance effect at the connection between the light emitting component 400 and the flexible circuit board, effectively ensuring that the light emitting component 400 is High frequency performance used in optical modules.
  • the staggered arrangement of the first metal layer 4324 and the second metal layer 4325 can equivalently form a capacitance of 0.05-0.2pF.
  • the shape of the first metal layer 4324 and the second metal layer 4325 can be changed as needed, etc.
  • the shapes of the first metal layer 4324 and the second metal layer 4325 can be simulated and set as needed.
  • the width of the first metal layer 4324 is 10-70 ⁇ m
  • the width of the second metal layer 4325 is 10-70 ⁇ m
  • the distance between the first metal layer 4324 and the second metal layer 4325 is 10-70 ⁇ m.
  • the lengths of the first metal layer 4324 and the second metal layer 4325 can be selected in combination with the width of the spacer 4323.
  • the width of the first metal layer 4324 is 20-60 ⁇ m
  • the width of the second metal layer 4325 is 20-60 ⁇ m
  • the interval between the first metal layer 4324 and the second metal layer 4325 is 20-60 ⁇ m.
  • the width direction of the first metal layer 4324 is perpendicular to the extension direction of the first metal layer 4324.
  • the extension direction of the first metal layer 4324 can refer to the x direction in FIG. 8, and the width direction can refer to FIG. As shown in the y direction in 8.
  • the width direction of the second metal layer 4325 is perpendicular to the extension direction of the second metal layer 4325.
  • the extension direction of the second metal layer 4325 can refer to the x direction in Figure 8
  • the width direction can refer to the y direction in Figure 8. Show.
  • the positive electrode layer 4321, the negative electrode layer 4322, the first metal layer 4324 and the second metal layer 4325 can be formed on the body of the substrate 432 through a metal film process.
  • a notch area is provided on the positive electrode layer 4321 and the negative electrode layer 4322 to improve the transmission performance of high-frequency signals on the substrate 432. Corner processing of the positive electrode layer 4321 and the negative electrode layer 4322.
  • the notch area includes a first notch area 4326 disposed at the other end of the negative electrode layer 4322 close to the anode layer 4321.
  • the first notch area 4326 can effectively reduce the occurrence of high-frequency signals in the anode layer 4322 close to the anode layer 4321. Radiation loss in this area.
  • the side of the negative electrode layer 4322 close to the positive electrode layer 4321 has one end (first end a) and the other end (second end b) oppositely arranged along the y direction.
  • the laser chip 431 is mounted on One end of the negative electrode layer 4322 close to the positive electrode layer 4321 (i.e., the first end a), and the first notch area 4326 is located at the other end of the negative electrode layer 4322 close to the positive electrode layer 4321 (i.e., the second end a) where the laser chip 431 is mounted b).
  • the first missing corner region 4326 causes the negative electrode layer 4322 to form a missing corner there, so that the corners of the negative electrode layer 4322 close to the positive electrode layer 4321 are all obtuse angles.
  • the first notch area 4326 is connected to the interval 4323, and the first notch area 4326 can increase the distance between the other end of the positive electrode layer 4321 and the negative electrode layer 4322 to a certain extent.
  • the first notch area 4326 connects and transitions one side of the negative electrode layer 4322 to the other side through a hypotenuse.
  • the shape of the first notch area 4326 can be an isosceles right triangle, but is not limited to an isosceles right triangle. triangle.
  • the notch area also includes a second notch area 4327 provided on the negative electrode layer 4322.
  • the second notch area 4327 is provided on the end of the negative electrode layer 4322 where the laser chip 431 is located, on the side away from the anode layer 4321.
  • the second notch area 4327 makes the corners formed by the negative electrode layer 4322 near this position all be obtuse angles, so as to effectively reduce the radiation loss of high-frequency signals generated in this area on the negative electrode layer 4322.
  • one end of the laser chip 431 disposed on the negative electrode layer 4322 includes a third end (refer to c in Figure 8 ) and the first end (refer to a in Figure 8 ) located oppositely along the x direction, where, The first end is close to the cathode layer 4321, the third end is away from the cathode layer 4321, and the second corner area 4327 is located at the third end.
  • the notch area may also include a third notch area 4328 disposed on the anode layer 4321.
  • the third notch area 4328 is wired on the anode layer 4321 and connected to the other side of the laser chip 431.
  • the corner region 4328 makes the corners formed by the positive electrode layer 4321 near this position all be obtuse angles, so as to effectively reduce the radiation loss of high-frequency signals generated in this area on the positive electrode layer 4321.
  • the width of the gap 4323 between the anode layer 4321 and the anode layer 4322 is usually relatively small, and the first metal layer is provided for convenience.
  • 4324 and the second metal layer 4325, the first metal layer 4324 and the second metal layer 4325 are disposed close to the other end of the anode layer 4321, and the first metal layer 4324 and the second metal layer 4325 can be in the interval 4323 and connected to the interval.
  • the first notch area 4326 of 4323 sufficient space can be left for the first metal layer 4324 and the second metal layer 4325.
  • first notch area 4326 connected to the gap 4323 is equivalent to increasing the width of the gap 4323 to a certain extent, and then the length and number of the first metal layer 4324 and the second metal layer 4325 can be set as needed. That is, the combined form of the first metal layer 4324 and the second metal layer 4325 can be adjusted as needed.
  • FIG 10 is an exploded schematic diagram of a substrate according to some embodiments of the present disclosure.
  • the substrate 432 includes a ceramic substrate body 432a.
  • the anode layer 4321 and the cathode layer 4322 are provided on the top of the ceramic substrate body 432a.
  • a reference ground layer 4329 is provided on the bottom of the ceramic substrate body 432a.
  • the reference ground layer 4329 is used for reflow of the laser component 430. land.
  • the positive electrode layer 4321, the negative electrode layer 4322, the first metal layer 4324, the second metal layer 4325 and the reference ground layer 4329 can be formed on the upper surface of the ceramic substrate body 432a through a metal film process.
  • the area of the negative electrode layer 4322 is larger than the area of the positive electrode layer 4321.
  • the positive electrode layer 4321 and the negative electrode layer 4322 are connected to other devices through wires to connect to the high-frequency signal transmission circuit to the laser chip 431. Therefore, the positive electrode layer 4321 and the negative electrode layer 4322 extend from one end of the substrate 432 to the other end of the substrate 432. The other ends, that is, the positive electrode layer 4321 and the negative electrode layer 4322 span across the substrate 432 .
  • the laser chip 431 is disposed at one end of the anode layer 4322, the anode wire of the laser chip 431 is connected to one end of the anode layer 4321, and the other end of the anode layer 4322 and the other end of the anode layer 4321 are configured to be wired to connect other devices.
  • the other end of the negative electrode layer 4322 and the other end of the positive electrode layer 4321 are configured to be wired to connect other devices.
  • FIG. 11 is a schematic diagram of wiring of a substrate according to some embodiments of the present disclosure. As shown in Figure 11, several wires are connected to the positive electrode layer 4321, and several wires are connected to the negative electrode layer 4322. The wires on the positive electrode layer 4321 and the negative electrode layer 4322 are close to the edges of the positive electrode layer 4321 and the negative electrode layer 4322.
  • Figure 12 is a schematic structural diagram of a first substrate provided according to some embodiments of the present disclosure.
  • Figure 13 is a schematic structural diagram of a second substrate provided according to some embodiments of the present disclosure.
  • Figure 14 is a schematic structural diagram of a second substrate provided according to some embodiments of the present disclosure. Schematic structural diagram of three substrates.
  • Figure 15 is a schematic structural diagram of a fourth substrate provided according to some embodiments of the present disclosure. As shown in Figures 12-15, the combined shapes of the first metal layer 4324 and the second metal layer 4325 in the substrate 432 shown in Figures 12-15 are different.
  • Figure 12 includes two first metal layers 4324 and one second metal layer 4325.
  • One second metal layer 4325 is disposed between the two first metal layers 4324, and the two first metal layers 4324 Equal length.
  • Figure 13 includes two first metal layers 4324 and two second metal layers 4325.
  • the two first metal layers 4324 and the two second metal layers 4325 are arranged alternately.
  • the two first metal layers 4324 have different The length of the first metal layer 4324 located below is relatively long, the two second metal layers 4325 have different lengths, and the length of the second metal layer 4325 located below is relatively long.
  • Figure 14 includes three first metal layers 4324 and three second metal layers 4325.
  • the three first metal layers 4324 and the three second metal layers 4325 are arranged alternately.
  • the three first metal layers 4324 have different length, and the lengths of the three first metal layers 4324 gradually become longer from top to bottom, and the three second metal layers 4325 have different lengths, and the lengths of the three second metal layers 4325 gradually become longer from top to bottom.
  • a metal layer 4324 is on top.
  • Figure 15 includes three first metal layers 4324 and three second metal layers 4325.
  • the three first metal layers 4324 and the three second metal layers 4325 are arranged alternately.
  • the three first metal layers 4324 have different length, and the lengths of the three first metal layers 4324 gradually become longer from top to bottom, the three second metal layers 4325 have different lengths, and the lengths of the three second metal layers 4325 gradually become longer from top to bottom,
  • the second metal layer 4325 is located on top.
  • the numbers of the first metal layer 4324 and the second metal layer 4325 are the same, but the arrangement and corresponding lengths of the first metal layer 4324 and the second metal layer 4325 are different.
  • the number and arrangement of the first metal layer 4324 and the second metal layer 4325 are different, their equivalent capacitance values are different. According to the specific needs of the capacitance value, the number and arrangement of the first metal layer 4324 and the second metal layer 4325 can be designed through simulation. In the embodiment of the present disclosure, the number and arrangement of the first metal layer 4324 and the second metal layer 4325 are not limited to the forms shown in 12-15.
  • the line spacing between the strips and the line width of each strip between the first metal layer 4324 and the second metal layer 4325 will affect the capacitance of its equivalent capacitance. Therefore, in the embodiment of the present disclosure, You can choose equal line spacing and equal line width, but of course it is not limited to equal line spacing and equal line width. According to the specific needs of the capacitance value, the line spacing and line width of the first metal layer 4324 and the second metal layer 4325 can be designed through simulation.
  • the combined form of the first metal layer 4324 and the second metal layer 4325 needs to be combined with the parameters and connection parameters of the laser chip 431 and the substrate 432 and through a large number of simulation experiments and It is verified that the combined form of the first metal layer 4324 and the second metal layer 4325 and the electrical characteristics of the laser component 430 cannot be obtained through arbitrary combinations.
  • the parasitic inductance of the wiring between the laser chip 431 and the anode layer 4321 can be calculated through simulation, and then the capacitance value of the capacitor can be calculated through the LC resonance formula, and then the first metal layer 4324 and the second metal layer can be designed through simulation 4325 to form a capacitor with a corresponding capacitance. Finally, it was verified through experiments that the combination of the first metal layer 4324 and the second metal layer 4325 can increase the bandwidth of the laser component 430 and achieve high flatness of the bandwidth curve.
  • a plurality of first metal layers 4324 and a plurality of second metal layers are provided on the substrate 432 4325, a plurality of first metal layers 4324 and a plurality of second metal layers 4325 are staggered to form an interdigital structure, and can fully utilize the space on the first notch area 4326 to provide an equivalent capacitance with matching capacitance for the laser chip 431.
  • FIG. 16 is a bandwidth curve diagram of a laser component corresponding to different capacitance values according to some embodiments of the present disclosure. As shown in Figure 16, under the same conditions, the first metal layer 4324 and the second metal layer 4325 are combined to form a capacitor on the substrate 432.
  • the bandwidth of the optical module can be increased by more than 3 GHz, and the LC resonant frequency caused by different capacitance values It is different from the amplitude.
  • the performance of some optical modules at a high temperature of 85C is low.
  • the first metal layer 4324 and the second metal layer 4325 are combined on the substrate 432 under the same conditions. Forming a capacitor, the bandwidth of the optical module can be increased by more than 3GHz.
  • the bandwidth peaking (jitter) will be increased, reducing the bandwidth linearity in the entire frequency range, causing the laser component 430 to Picture distortion and overshooting. Therefore, in the embodiment of the present disclosure, according to the parasitic inductance of the wiring between the laser chip 431 and the anode layer 4321, a combination form of the first metal layer 4324 and the second metal layer 4325 with appropriate capacitance is selected to improve the bandwidth of the laser component 430 while ensuring The flatness of the bandwidth curve.
  • Figure 17 is a partial structural schematic diagram of a light emitting component provided according to some embodiments of the present disclosure.
  • Figure 18 is a partial structural schematic diagram of a light emitting component provided according to some embodiments of the present disclosure.
  • Figure 19 is a partial structural diagram of a light emitting component provided according to some embodiments of the present disclosure. Some embodiments provide an exploded view of a partial structure of a light emitting component.
  • FIG. 20 is a cross-sectional view of a partial structure of a light emitting component provided according to some embodiments of the present disclosure.
  • the tube base 410 is provided with a fixing post 411 and a number of pins 412; the fixing post 411 is set on the top of the tube stand 410 and is electrically connected to the tube stand 410, and the pins 412 are threaded through the tube seat 410. .
  • the plurality of pins 412 include input pins 4121, output pins 4122, etc.; the laser component 430 is arranged on the fixed column 411, and the laser component 430 is wired to connect the corresponding pins 412.
  • the fixed post 411 is electrically connected to the tube base 410 , that is, the fixed post 411 is electrically connected to the reference ground, and the reference ground layer 4329 on the substrate 432 is mounted on the fixed post 411 and electrically connected to the fixed post 411 .
  • the fixing post 411 facilitates the installation of the laser component 430 on the tube base 410 and provides sufficient contact area with the substrate 432 to facilitate heat dissipation of the laser chip 431.
  • a mounting surface 4111 is provided on the fixing column 411, the output pins 4122 are provided on one side of the mounting surface 4111, and the input pins 4121 are provided on the other side of the mounting surface 4111.
  • the laser component 430 is mounted on the mounting surface 4111 , that is, the back surface of the substrate 432 .
  • the anode layer 4321 is wired to connect to the input pin 4121
  • the cathode layer 4322 is wired to connect to the output pin 4122 .
  • the output pins 4122 and the input pins 4121 are arranged on both sides of the mounting surface 4111 and combined with the mounting surface 4111 to facilitate wiring connection between the substrate 432 and the output pins 4122 and the input pins 4121.
  • a mounting slot 413 is also provided on the top surface of the tube base 410, and the mounting slot 413 is used to facilitate the installation of other devices.
  • the backlight detector used for optical power detection of the laser assembly 430 is installed in the installation slot 413.
  • the installation slot 413 is not limited to being used for installing the backlight detector.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente demande concerne un module optique et un ensemble laser. Le module optique comprend un composant d'émission optique, le composant d'émission optique étant configuré pour émettre un signal optique, et le composant d'émission optique comprenant un ensemble laser. L'ensemble laser comprend : un substrat, une surface supérieure de celui-ci étant pourvue d'une couche d'électrode positive et d'une couche d'électrode négative, un espace étant présent entre la couche d'électrode positive et la couche d'électrode négative, plusieurs premières couches métalliques et plusieurs secondes couches métalliques étant disposées dans l'espace, les premières couches métalliques étant électriquement connectées à la couche d'électrode positive, les secondes couches métalliques étant électriquement connectées à la couche d'électrode négative, et les premières couches métalliques et les secondes couches métalliques étant agencées de manière croisée ; et une puce laser, qui est montée sur la couche d'électrode négative, un fil d'électrode positive étant connecté à la couche d'électrode positive. Au moyen du module optique et de l'ensemble laser décrits dans la présente demande, la bande passante de l'ensemble laser peut augmenter dans une plage de fréquences appropriée, et la planéité d'une courbe de bande passante du module optique peut également être assurée.
PCT/CN2023/100069 2022-07-21 2023-06-14 Module optique et ensemble laser WO2024016905A1 (fr)

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