WO2024012417A1 - 一种拉晶换热装置和拉晶设备 - Google Patents

一种拉晶换热装置和拉晶设备 Download PDF

Info

Publication number
WO2024012417A1
WO2024012417A1 PCT/CN2023/106628 CN2023106628W WO2024012417A1 WO 2024012417 A1 WO2024012417 A1 WO 2024012417A1 CN 2023106628 W CN2023106628 W CN 2023106628W WO 2024012417 A1 WO2024012417 A1 WO 2024012417A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat exchange
crystal pulling
cylinder
crystal
barrel section
Prior art date
Application number
PCT/CN2023/106628
Other languages
English (en)
French (fr)
Inventor
文永飞
程磊
马少林
成路
邓浩
丁彪
马宝
张朝光
Original Assignee
隆基绿能科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202221794965.9U external-priority patent/CN218291172U/zh
Priority claimed from CN202222235392.2U external-priority patent/CN218436018U/zh
Application filed by 隆基绿能科技股份有限公司 filed Critical 隆基绿能科技股份有限公司
Publication of WO2024012417A1 publication Critical patent/WO2024012417A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the present application relates to the field of photovoltaic technology, and in particular to a crystal pulling heat exchange device and crystal pulling equipment.
  • Crystal rods are the basic raw materials for crystalline silicon cells.
  • the method of increasing the crystal growth rate is usually used to improve production efficiency and reduce costs.
  • efficient heat exchange devices are generally used to absorb the latent heat released during crystallization to accelerate the crystal growth rate.
  • the heat exchange device will be designed with a wide top and narrow structure. At this time, the overall height of the heat exchange device is low, and the longitudinal temperature gradient inside the heat exchange device is relatively small. Small, resulting in low heat exchange efficiency between the crystal rod and the heat exchange device, which restricts the growth rate of the crystal rod.
  • the purpose of this application is to provide a crystal pulling heat exchange device and crystal pulling equipment, which are used to improve the heat exchange efficiency and increase the growth speed of the crystal rod while being able to observe the growth of the crystal rod.
  • a crystal pulling heat exchange device applied to crystal pulling equipment, including a heat exchange cylinder.
  • the heat exchange cylinder has a cooling chamber with an entrance to the cooling chamber and an outlet of the cooling chamber.
  • the heat exchange cylinder includes a first cooling chamber arranged in communication from bottom to top.
  • the barrel section and the second barrel section, along the circumferential direction of the first barrel section, the first barrel section includes a first heat exchange structure for forming an observation channel and a second heat exchange structure connected with the first heat exchange structure. thermal structure.
  • the first cylinder section and the second cylinder section are connected and arranged from bottom to top.
  • the first cylinder section segment includes the form for A first heat exchange structure forming an observation channel and a second heat exchange structure connected with the first heat exchange structure.
  • the second cylinder section is located at the upper part of the first heat exchange structure.
  • the second cylinder section can increase the overall height of the crystal pulling heat exchange device, improve the longitudinal temperature gradient of the crystal rod growth inside the crystal pulling heat exchange device, and thus The growth rate of the crystal rod is increased; at the same time, heat exchange is performed on the upper part of the crystal rod through the second cylinder section, which can improve the heat exchange efficiency of the crystal rod. It can be seen that the crystal pulling heat exchange device provided in this application not only ensures the formation of an observation channel, but also improves the heat exchange efficiency and the growth rate of the crystal rod, thereby shortening the crystal pulling time and reducing the production cost.
  • a plurality of first pits are provided on both sides of the inner shell of the heat exchange cylinder close to the crystal pulling axis, and the first pits are provided on one side of the inner shell.
  • the first pits are staggered with the first pits on the other side surface.
  • the diameter of the first pit is 1mm-20mm, and the distance between two adjacent first pits located on the same surface is greater than the diameter of the first pit.
  • the thickness of the pit is smaller than the wall thickness of the inner shell of the heat exchange cylinder close to the crystal pulling axis.
  • a plurality of second pits are provided on one side surface of the inner shell of the heat exchange cylinder close to the crystal pulling axis, and a plurality of second pits are provided on the other side surface.
  • the second pit can increase the radiation heat absorption area of the inner surface of the inner shell of the heat exchange cylinder close to the crystal pulling axis, so that the heat exchange efficiency of the crystal ingot is higher.
  • the diameters of the second pits and the protrusions are both 1mm-20mm, and the distance between two adjacent second pits is greater than or equal to the diameter of the second pits.
  • the distance between two adjacent protrusions is greater than or equal to the diameter of the protrusions, and the thickness of the second pit and the protrusion is less than the wall thickness of the inner shell of the heat exchange cylinder close to the crystal pulling axis.
  • a plurality of pyramid structures with vertex angles facing the crystal pulling axis are provided on the surface of the inner shell of the heat exchange cylinder close to the crystal pulling axis.
  • the length of the bottom side of the pyramid structure is 10um-5mm
  • the vertex angle ⁇ of the pyramid structure is: 36° ⁇ 60°.
  • the first heat exchange structure includes an inclined heat exchange part inclined with respect to the crystal pulling axis, and the heat exchange surface of the inclined heat exchange part is an inclined plane or an inclined arc surface.
  • the first heat exchange structure also includes a connecting heat exchange part
  • the inclined heat exchange part is connected to the second heat exchange structure through the connecting heat exchange part, the inclined heat exchange part and the connecting heat exchange part
  • the observation channel is surrounded by the whole part
  • the heat exchange surface connecting the heat exchange part is a connecting plane or a connecting arc surface.
  • the central angle of the first heat exchange structure is greater than 60° and less than 180°.
  • the ratio of the length of the second barrel section to the length of the first barrel section is 0.1-0.8.
  • Such an arrangement can not only prevent the formation of a large longitudinal temperature gradient when the second cylinder section is short, but also prevent the processing and installation costs from increasing when the second cylinder section is long.
  • a blackening treatment layer for improving the radiation heat absorption capacity of the heat exchange cylinder is provided on the inner surface of the inner shell of the heat exchange cylinder close to the crystal pulling axis.
  • Such an arrangement can improve the radiation heat absorption capacity of the inner surface of the inner shell of the heat exchange cylinder close to the crystal pulling axis.
  • the heat exchange barrel also includes a third barrel section, which is located below the first heat exchange structure and the second heat exchange structure; the third barrel section is close to the inner shell of the crystal pulling axis.
  • a groove is provided on the surface and opens toward the inside of the third barrel section, and the groove is at least partially located on the observation path of the observation channel.
  • the first heat exchange structure includes an inclined heat exchange part inclined relative to the crystal pulling axis, the heat exchange surface of the inclined heat exchange part is an inclined plane or an inclined arc surface, and the inner surface of the groove is at least partially in contact with the inclined heat exchange part.
  • the heat exchange surfaces are connected.
  • the inner shell of the third barrel section is close to the crystal pulling axis.
  • a plurality of grooves are provided on the inner surface of the crystal rod; the plurality of grooves are connected to the observation channel of the first barrel section to ensure that the bottom part of the crystal rod can be observed and measured.
  • the groove is disposed through the inner surface of the inner shell of the third barrel section close to the crystal pulling axis.
  • the heat exchange cylinder is used to form a crystal rod, and the distance between the portion of the inner shell of the third cylinder section that is close to the crystal pulling axis and is not provided with grooves and the crystal rod is greater than or equal to 10 mm.
  • Such an arrangement can prevent the ungrooved portion of the inner shell of the third barrel section close to the crystal pulling axis from affecting the crystal pulling growth of the crystal rod when it is close to the crystal rod.
  • a crystal pulling heat exchange device applied to crystal pulling equipment, including a heat exchange cylinder.
  • the heat exchange cylinder has a cooling chamber with an entrance to the cooling chamber and an outlet of the cooling chamber.
  • the heat exchange cylinder includes a third cooling chamber arranged in communication from bottom to top.
  • the barrel section and the first barrel section, the first barrel section includes a heat exchange structure for forming an observation channel, the third barrel section is provided with an opening on the inner surface of the inner shell close to the crystal pulling axis toward the third barrel.
  • the crystal pulling heat exchange device provided in this application not only ensures the formation of an observation channel, but also improves the heat exchange efficiency and the growth rate of the crystal rod, thereby shortening the crystal pulling time and reducing the production cost.
  • the third barrel section is located at the lower part of the first barrel section. The third barrel section can increase the overall height of the crystal pulling heat exchange device, thereby increasing the longitudinal temperature gradient of the crystal rod growth inside the crystal pulling heat exchange device, and further Increase the growth rate of crystal rods.
  • the heat exchange structure includes an inclined heat exchange part inclined relative to the axis of crystal pulling, the heat exchange surface of the inclined heat exchange part is an inclined plane or an inclined arc surface, and at least part of the inner surface of the groove is in contact with the inclined heat exchange part. Hot sides meet.
  • a plurality of grooves are provided on the inner surface of the inner shell of the third barrel section close to the crystal pulling axis.
  • the first barrel section is a tapered barrel structure
  • the inner surface of the groove is at least partially connected with the inner surface of the inner shell of the tapered barrel structure close to the crystal pulling axis.
  • a plurality of grooves are provided on the inner surface of the inner shell of the third barrel section close to the crystal pulling axis, and the plurality of grooves are provided along the circumferential direction of the third barrel section. Circumferential distribution. This arrangement ensures that the plurality of grooves are located on the observation path of the observation channel.
  • the first barrel section includes a first heat exchange structure for forming an observation channel and a second heat exchange structure connected with the first heat exchange structure, and the groove is The inner surface is at least partially connected to the heat exchange surface of the first heat exchange structure.
  • a plurality of grooves are provided on the inner surface of the inner shell of the third barrel section close to the crystal pulling axis, and the plurality of grooves are connected with the first barrel section.
  • the observation channels are connected to ensure that the bottom part of the crystal rod can be observed and measured.
  • the groove is disposed through the inner surface of the inner shell of the third barrel section close to the crystal pulling axis.
  • the groove can be formed from the bottom during processing, making the groove processing more convenient.
  • workers or observation equipment can more conveniently observe the bottom part of the crystal rod.
  • the heat exchange cylinder is used to form a crystal rod, and the distance between the portion of the inner shell of the third cylinder section that is close to the crystal pulling axis and is not provided with grooves and the crystal rod is greater than or equal to 10 mm.
  • Such an arrangement can prevent the ungrooved portion of the inner shell of the third barrel section close to the crystal pulling axis from affecting the crystal pulling growth of the crystal rod when it is close to the crystal rod.
  • This application also provides a crystal pulling equipment, including a crystal pulling heat exchange device according to any one of the above solutions.
  • Figure 1 is a schematic diagram of the first crystal pulling heat exchange device in the embodiment of the present application.
  • Figure 2 is a top view of the first crystal pulling heat exchange device in the embodiment of the present application.
  • Figure 3 is a cross-sectional view along line O-O of Figure 2;
  • Figure 4 is a cross-sectional view along line N-N in Figure 2;
  • Figure 5 is one of the schematic diagrams of the single crystal furnace of the crystal pulling equipment in the embodiment of the present application.
  • Figure 6 is a schematic diagram of the front and back pit structures on the inner shell in the embodiment of the present application.
  • Figure 7 is a cross-sectional view along line N-N in Figure 6;
  • Figure 8 is a schematic diagram of the punched pit structure on the inner shell in the embodiment of the present application.
  • Figure 9 is a cross-sectional view along line N-N in Figure 8.
  • Figure 10 is a schematic diagram of the pyramid structure on the inner shell in the embodiment of the present application.
  • Figure 11 is a schematic diagram 2 of the pyramid structure on the inner shell in the embodiment of the present application.
  • Figure 12 is a schematic diagram of the second crystal pulling heat exchange device in the embodiment of the present application.
  • Figure 13 is a bottom schematic diagram of the second crystal pulling heat exchange device in the embodiment of the present application.
  • Figure 14 is a bottom view of the second crystal pulling heat exchange device in the embodiment of the present application.
  • Figure 15 is the second bottom view of the second crystal pulling heat exchange device in the embodiment of the present application.
  • Figure 16 is a cross-sectional view along A-A of Figure 15;
  • Figure 17 is a schematic diagram 1 of the third crystal pulling heat exchange device in the embodiment of the present application.
  • Figure 18 is a schematic diagram two of the third crystal pulling heat exchange device in the embodiment of the present application.
  • Figure 19 is a bottom view of the third crystal pulling heat exchange device in the embodiment of the present application.
  • 1-heat exchange cylinder 101-first cylinder section, 102-second cylinder section, 103-third cylinder section, 1031-groove, 2-cooling cavity inlet, 3-cooling cavity outlet, 4-
  • the first heat exchange structure 41-inclined heat exchange part, 42-connected heat exchange part, 43-vertical heat exchange part, 44-second heat exchange structure, 5-cooling cavity, 6-furnace cover, 7-main furnace Chamber, 8-crystal rod, 9-insulation layer, 10-heater, 11-guide tube, 12-silicone liquid, 13-observation window, 14-first pit, 15-second pit, 16-convex Starting from, 17-pyramid structure, 18-observation equipment.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as “first” and “second” may explicitly or implicitly include one or more of these features.
  • plurality means two or more than two, unless otherwise explicitly and specifically limited.
  • Several means one or more than one, unless otherwise expressly and specifically limited.
  • connection should be understood in a broad sense.
  • connection can be a fixed connection or a detachable connection.
  • Connection, or integral connection can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements.
  • the most effective way to reduce the production cost of single crystal silicon Czochralski is to increase the growth rate of the crystal.
  • ⁇ S is the density of silicon (g/cm 3 )
  • Ks is the thermal conductivity coefficient (J/(K ⁇ cm ⁇ s))
  • L is the latent heat of crystallization of silicon (J/g)
  • dTs/dz is the crystallization interface temperature gradient. (K/cm).
  • the longitudinal temperature gradient of single crystal silicon growth needs to be increased. After the longitudinal temperature gradient at the single crystal growth interface is increased, the heat generated by the crystal rod can be taken away as quickly as possible, improving the heat exchange efficiency, and at the same time avoiding the heat generated by the silicon liquid and the heater. Passed to the vicinity of the crystal rod.
  • Crystal rods are the basic raw materials for crystalline silicon cells.
  • the method of increasing the crystal growth rate is usually used to improve production efficiency and reduce costs.
  • efficient heat exchange devices are generally used to absorb the latent heat released during crystallization to accelerate the crystal growth rate.
  • the heat exchange device will be designed with a wide top and narrow structure. At this time, the overall height of the heat exchange device is low, and the longitudinal temperature gradient inside the heat exchange device is relatively small. Small, resulting in low heat exchange efficiency between the crystal rod and the heat exchange device, which restricts the growth rate of the crystal rod.
  • the crystal pulling heat exchange device provided by the embodiment of the present application is used in crystal pulling equipment and includes a heat exchange cylinder 1.
  • the heat exchange cylinder 1 has a cooling chamber inlet 2 and a cooling chamber outlet 3.
  • Cavity 5 the heat exchange cylinder 1 includes a first cylinder section 101 and a second cylinder section 102 arranged in communication from bottom to top.
  • the first cylinder section 101 includes A first heat exchange structure 4 forming an observation channel and a second heat exchange structure 44 connected with the first heat exchange structure 4 are formed.
  • the crystal pulling heat exchange device is arranged above the crucible, the crystal rod 8 is grown inside the heat exchange cylinder 1, and the cooling medium enters the cooling chamber 5 of the heat exchange cylinder 1 through the cooling chamber inlet 2, and passes through the cooling chamber. Outlet 3 flows out, allowing heat exchange between the crystal rod 8 and the heat exchange cylinder 1.
  • Workers or observation equipment observe the growth process of the crystal rod 8 in the heat exchange cylinder 1 through the observation channel of the first heat exchange structure 4. The growth rate of the crystal rod 8 and the growth environment in the furnace can be grasped in real time to ensure the normal growth of the crystal rod 8 .
  • the first cylinder section 101 and the second cylinder section 102 are connected and arranged from bottom to top.
  • the first cylinder section Section 101 includes a first heat exchange structure 4 for forming an observation channel and a second heat exchange structure 44 in communication with the first heat exchange structure 4 .
  • the second cylinder section 102 is located at the upper part of the first heat exchange structure 4.
  • the second cylinder section 102 can increase the overall height of the crystal pulling heat exchange device and improve the longitudinal growth direction of the crystal rod 8 inside the crystal pulling heat exchange device.
  • the temperature gradient further increases the growth rate of the crystal rod 8; at the same time, the heat exchange efficiency of the crystal rod 8 can be improved by exchanging heat on the upper part of the crystal rod 8 through the second cylinder section 102.
  • the crystal pulling heat exchange device provided in this application not only ensures the formation of an observation channel, but also improves the heat exchange efficiency and increases the growth rate of the crystal rod 8, thereby shortening the crystal pulling time and reducing the production cost.
  • the heat exchange medium enters the cooling chamber 5 of the heat exchange cylinder 1 through the cooling chamber inlet 2, and flows out through the cooling chamber outlet 3.
  • the heat exchange medium absorbs the heat generated by the crystal rod 8, which can improve the heat exchange between the crystal rod 8 and the heat exchange medium.
  • the crystal pulling equipment includes a single crystal furnace, and the crystal pulling heat exchange device is arranged in the single crystal furnace.
  • the single crystal furnace includes a main furnace chamber 7 and is arranged above the main furnace chamber 7 to cover the main furnace chamber 7.
  • the chamber 7 is provided with a crucible, a heater 10, a guide tube 11 and an insulation layer 9. Silicon liquid 12 is stored in the crucible.
  • the heater 10 is arranged around the crucible for heating the silicon liquid 12 in the crucible.
  • the guide tube 11 It is arranged above the silicon liquid 12.
  • the heat exchange cylinder 1 is set in the flow guide cylinder 11.
  • the crystal rod 8 is grown and formed in the heat exchange cylinder 1.
  • the insulation layer 9 is arranged outside the heater 10 and the flow guide cylinder 11.
  • the furnace cover 6 is provided with an observation window 13. Workers or observation equipment can observe the inside of the furnace through the observation window 13, and observe the inside of the heat exchange cylinder 1 through the observation channel of the first heat exchange structure 4. of crystal rod 8.
  • a plurality of first pits 14 are provided on both the inner and outer surfaces of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis, and the first pits 14 on the inner surface of the inner shell are The pits 14 are staggered with the first pits 14 on the outer surface.
  • the first pit 14 can increase the radiation heat absorption area of the inner surface of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis, so that the heat exchange efficiency of the crystal rod 8 is higher; at the same time, it can further The distance between the heat exchange cylinder 1 and the crystal rod 8 is reduced, and the heat exchange capacity of the heat exchange cylinder 1 is improved.
  • the shell refers to the shell close to the crystal pulling axis.
  • the outer shell of the heat exchange cylinder 1 refers to the shell close to the outside of the heat exchange cylinder 1.
  • a cooling cavity is formed between the inner shell and the outer shell of the heat exchange cylinder 1. 5.
  • the inner surface of the inner shell of the heat exchange cylinder 1 refers to the surface of the inner shell facing the crystal pulling axis
  • the outer surface of the inner shell of the heat exchange cylinder 1 refers to the surface of the inner shell facing the cooling chamber 5 .
  • the thickness of the first pit refers to the depth of the first pit.
  • a plurality of second pits 15 are provided on the inner surface of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis.
  • a plurality of protrusions 16 are provided on the outer surface of the body; or, a plurality of protrusions 16 are provided on the inner surface of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis, and the heat exchange cylinder 1 is provided with a plurality of protrusions 16 on the inner surface of the inner shell close to the crystal pulling axis.
  • a plurality of second depressions 15 are provided on the outer surface of the inner housing of the axis.
  • the second pit 15 can increase the radiation heat absorption area of the inner surface of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis, so that the heat exchange efficiency of the crystal rod 8 is higher; at the same time, it can further The heat exchange efficiency between the inner shell and the cooling cavity 5 is increased.
  • the diameters D of the second pits 15 and the protrusions 16 are both 1 mm to 20 mm, preferably 5 mm, and the distance d between two adjacent second pits 15 is greater than or equal to the second pits 15
  • the thickness h of the second pit 15 and the protrusion 16 is both smaller than the proximity of the heat exchange cylinder 1
  • the wall thickness k, preferably h, of the inner shell of the crystal pulling axis is 1mm-3mm.
  • the thickness of the second pit refers to the depth of the second pit
  • the thickness of the protrusion 16 refers to the height of the protrusion relative to the surface of the inner shell.
  • the inner surface of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis is provided with a plurality of pyramid structures 17 with vertex angles facing the crystal pulling axis.
  • the pyramid structure 17 can increase the radiation heat absorption area of the inner surface of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis, and at the same time absorb more heat radiated by the crystal rod 8, so that the crystal rod 8 The heat exchange efficiency is higher; at the same time, the distance between the heat exchange cylinder 1 and the crystal rod 8 can be further reduced, and the heat exchange capacity of the heat exchange cylinder 1 is improved.
  • the first heat exchange structure 4 includes an inclined heat exchange part 41 inclined relative to the crystal pulling axis.
  • the heat exchange surface is an inclined plane or an inclined arc surface. Both sides of the inclined heat exchange part 41 are connected to the second heat exchange structure 44 through a connecting plate, and no cooling cavity 5 is provided inside the connecting plate.
  • the first heat exchange structure 4 has a simple structure and is easy to process. When observing, the staff usually stand on the side of the crystal pulling equipment and look tilted towards the single crystal furnace. When the tilted heat exchange surface is relative to the pulling surface, When the crystal axis is tilted, an observation channel suitable for the observation path can be formed, making observation more convenient for workers.
  • the first heat exchange structure 4 also includes a connecting heat exchange part 42. Both sides of the inclined heat exchange part 41 are connected to the second heat exchange structure 44 through the connecting heat exchange part 42, so that the cooling medium can flow into Further heat exchange is performed in the inclined heat exchange part 41 and the connecting heat exchange part 42 to improve the heat exchange efficiency of the crystal rod 8 .
  • the inclined heat exchange part 41 and the connecting heat exchange part 42 form an observation channel, and the heat exchange surface of the connecting heat exchange part 42 is a connecting plane or a connecting arc surface.
  • the connecting heat exchange part 42 has a simple structure and is easy to process. In this embodiment, it is preferred that the connecting heat exchange part 42 is a connecting plane with a simpler structure.
  • the central angle of the first heat exchange structure 4 is greater than 60° and less than 180°.
  • the first heat exchange structure 4 and the second heat exchange structure 44 together form the side wall of the first cylinder section 101.
  • the central angle of the first heat exchange structure 4 refers to the cross section perpendicular to the axis of the heat exchange cylinder 1. The angle between the axis of the cylinder 1 and the line connecting the two ends of the first heat exchange structure 4. When the central angle of the first heat exchange structure 4 is less than 60°, the observation channel formed by the first heat exchange structure 4 is narrower.
  • the distance between the rod 8 and the first heat exchange structure 4 is far, and the heat exchange efficiency of the crystal rod 8 is low; when the central angle is greater than 60° and less than 180°, it is necessary to ensure that the first heat exchange structure 4 can form a good While observing the channel, the distance between the portion of the first barrel section 101 that is not provided with the first heat exchange structure 4 and the crystal rod 8 is relatively close, which can further improve the heat exchange efficiency of the crystal rod 8 .
  • the inner and outer walls of the second heat exchange structure 44 of the first cylinder section 101 of this embodiment are both vertical cylindrical surfaces, and the outer surface of the inclined heat exchange part 41 is an inclined plane or an inclined arc.
  • the second cylinder section 102 is a straight cylinder section, and the outer diameter of the first cylinder section 101 is the same as or different from the outer diameter of the second heat exchange structure 44 .
  • the ratio of the length of the second barrel section 102 to the length of the first barrel section 101 is 0.1-0.8.
  • the second barrel section 102 is shorter and cannot form a large longitudinal temperature gradient, which affects the increase in the heat exchange efficiency of the crystal rod 8 Smaller;
  • the ratio of the length of the second barrel section 102 to the length of the first barrel section 101 is greater than 0.8, the second barrel section 102 is longer, which increases processing and installation costs;
  • the length of the second barrel section 102 When the length ratio to the first cylinder section 101 is 0.1-0.8, it can not only prevent the second cylinder section 102 from forming a larger longitudinal temperature gradient when it is shorter, but also prevent the second cylinder section 102 from increasing when it is longer. Processing and installation costs.
  • a blackening treatment layer for improving the radiation heat absorption capacity of the heat exchange cylinder 1 is provided on the inner surface of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis.
  • Blackening treatment is a common method of chemical surface treatment. The principle is to first use physical methods (such as sandblasting) or chemical methods (such as chemical corrosion) to roughen the metal surface, and then use CVD (chemical vapor deposition), PVD ( Physical vapor deposition) or other methods such as electroplating can blacken the metal surface to achieve the effect of increasing the radiation absorption rate.
  • the blackening layer may be one or more of a graphene blackening layer, a chemical salt bath blackening layer, and an electroplating blackening layer, but these processing methods are not limited. Adopting this structure can improve the radiation heat absorption capacity of the inner surface of the inner shell of the heat exchange cylinder 1 close to the crystal pulling axis, thereby improving the heat exchange efficiency of the crystal rod 8 .
  • an embodiment of the present application also provides a crystal pulling equipment, including a single crystal furnace and a crystal pulling heat exchange device, wherein the crystal pulling heat exchange device is a crystal pulling heat exchanger as described in any of the above embodiments. device.
  • the crystal pulling heat exchange device is arranged in the single crystal furnace.
  • the single crystal furnace includes a main furnace chamber 7 and a furnace cover 6 arranged above the main furnace chamber 7 for covering the main furnace chamber 7.
  • the main furnace chamber 7 is provided with a crucible, Heater 10, guide tube 11 and insulation layer 9, silicon liquid 12 is stored in the crucible, heater 10 is set around the crucible for adding The silicon liquid 12 in the hot crucible, the flow guide cylinder 11 is set above the silicon liquid 12, the heat exchange cylinder 1 is set in the flow guide cylinder 11, the crystal rod 8 is grown and formed in the heat exchange cylinder 1, and the insulation layer 9 is set On the outside of the heater 10 and the guide tube 11, it plays the role of heat insulation.
  • the furnace cover 6 is provided with an observation window 13. The staff or observation equipment can observe the inside of the furnace through the observation window 13, and through the first heat exchanger The observation channel of structure 4 observes the crystal rod 8 inside the heat exchange cylinder 1.
  • the heat exchange cylinder also includes a third cylinder section 103.
  • the third cylinder section 203 is located between the first heat exchange structure 4 and the second heat exchange structure. 44 below; the inner surface of the inner shell of the third barrel section 103 close to the crystal pulling axis is provided with a groove 1031 that opens toward the inside of the third barrel section, and the groove 1031 is at least partially located on the observation path of the observation channel.
  • the crystal pulling heat exchange device in Figures 12 to 19 is a further detailed embodiment of the crystal pulling heat exchange device in Figures 1 to 5.
  • the surface is provided with a groove 1031 that opens toward the inside of the third barrel section, so that workers or observation equipment 18 can pass through the observation channel on the first barrel section 101 and the groove 1031 on the third barrel section 103 Observe the crystal rod 8 in the heat exchange cylinder 1. Since the groove 1031 can form an observation channel for observing the bottom of the crystal rod 8, the staff or observation equipment 18 can more fully observe the crystal rod in the heat exchange cylinder 1.
  • the distance between the part without the groove 1031 and the crystal rod 8 in the heat exchange cylinder 1 is relatively close, which is conducive to the crystal pulling.
  • the rod 8 exchanges heat with the part where the groove 1031 is not provided, thereby improving the heat exchange efficiency of the crystal rod 8 .
  • the crystal pulling heat exchange device provided in this application not only ensures the formation of an observation channel, but also improves the heat exchange efficiency and increases the growth rate of the crystal rod 8, thereby shortening the crystal pulling time and reducing the production cost.
  • the third cylinder section 103 is located at the lower part of the first cylinder section 101. The third cylinder section 103 can increase the overall height of the crystal pulling heat exchange device, thereby improving the longitudinal growth direction of the crystal rod 8 inside the crystal pulling heat exchange device. The temperature gradient further increases the growth rate of the crystal rod 8 .
  • the first heat exchange structure 4 includes an inclined heat exchange part inclined relative to the crystal pulling axis, and the inclined heat exchanger
  • the heat exchange surface at the bottom is an inclined plane or an inclined arc surface.
  • an observation channel that is inclined relative to the crystal pulling axis can be formed by the inclined heat exchange part.
  • the inclined heat exchange part can be a cone or pyramid structure coaxially arranged with the crystal pulling axis. , or it can be a sloping plate structure disposed at a circumferential part of the first cylinder section 101 . With this structure, the heat exchange structure is simple and easy to process.
  • the staff When observing, the staff usually stand on the side of the crystal pulling equipment and look tilted towards the single crystal furnace.
  • the tilted heat exchange surface When the tilted heat exchange surface is relative to the crystal pulling axis, When tilted, an observation channel can be formed that matches the observation path, making it more convenient for staff to observe.
  • a plurality of grooves 1031 are provided on the inner surface of the inner shell of the third barrel section 103 close to the crystal pulling axis.
  • the plurality of grooves 1031 are sequentially distributed along the circumferential direction of the third barrel section 103, and the plurality of grooves 1031 are located on the observation path of the observation channel.
  • the first barrel section 101 includes a first heat exchange structure 4 for forming an observation channel and a heat exchanger connected to the first heat exchange structure 4.
  • the first heat exchange structure 4 may include an inclined heat exchange part and a connecting heat exchange part. Both sides of the inclined heat exchange part are connected to the second heat exchange structure 44 through the connecting heat exchange parts respectively, so that the cooling medium can flow into the inclined heat exchange part. Further heat exchange is performed in the hot part and the connecting heat exchange part to improve the heat exchange efficiency of the crystal rod 8 .
  • the inclined heat exchange part and the connecting heat exchange part form an observation channel, and the heat exchange surface connecting the heat exchange part is a connecting plane or a connecting arc surface.
  • the second heat exchange structure 44 can be a straight section, and the first heat exchange structure 4 can be an inclined heat exchange structure that is inclined toward the outside of the heat exchange cylinder 1 relative to the crystal pulling axis.
  • the second heat exchange structure 44 is closer to the crystal pulling axis, which can improve the heat exchange efficiency between the second heat exchange structure 44 and the crystal rod 8;
  • the heat exchange cylinder 1 can also include a second cylinder section 102 , the lower end of the third cylinder is connected to the second heat exchange structure 44.
  • the second cylinder section 102 can further increase the overall height of the crystal pulling heat exchange device, thereby further improving the growth efficiency of the crystal rod 8 inside the crystal pulling heat exchange device.
  • the longitudinal temperature gradient further increases the growth rate of the crystal rod 8 .
  • the crystal rod 8 can be observed through the observation channel of the first heat exchange structure 4, and the crystal rod 8 can be heat exchanged through the second heat exchange structure 44, thereby improving the heat exchange between the crystal rod 8 and the crystal puller. heat exchange efficiency between devices.
  • the difference between the heat exchange cylinder 1 in Figure 17 and the heat exchange cylinder 1 in Figure 1 is that the third cylinder section 103 included in the heat exchange cylinder 1 is close to the crystal pulling axis.
  • the inner surface of the housing is provided with a groove 1031 that opens toward the inside of the third cylinder section.
  • the central angle of the first heat exchange structure 4 is greater than 60° and less than 180°.
  • the first heat exchange structure 4 and the second heat exchange structure 44 together form the side wall of the first cylinder section 101.
  • the central angle of the first heat exchange structure 4 refers to the cross section perpendicular to the axis of the heat exchange cylinder 1.
  • the first heat exchange structure 4 has fewer parts, the distance between the crystal rod 8 and the first heat exchange structure 4 is far, and the heat exchange efficiency of the crystal rod 8 is lower; when the central angle is greater than 60° and less than 180°, while ensuring that the first heat exchange structure 4 can form a good observation channel, the portion of the first cylinder section 101 that is not provided with the first heat exchange structure 4 is The distance between the crystal rods 8 is relatively close, which can further improve the heat exchange efficiency of the crystal rods 8 .
  • the inner and outer walls of the second heat exchange structure 44 of the first cylinder section 101 are both vertical cylindrical surfaces, and the outer surface of the inclined heat exchange part is an inclined plane or an inclined arc surface.
  • the outer diameter of the segment 101 is the same as or different from the outer diameter of the second heat exchange structure 44 .
  • a plurality of grooves 1031 are provided on the inner surface of the inner shell of the third barrel section 103 close to the crystal pulling axis.
  • a plurality of grooves 1031 are connected to the observation channel of the first barrel section 101 to ensure that the bottom end of the crystal rod 8 can be observed and measured.
  • two grooves 1031 are provided, and the two grooves 1031 can be symmetrically distributed on both sides of the first heat exchange structure 4.
  • the two grooves 1031 can be used to heat the heat exchange cylinder 1
  • the crystal rod 8 is fully observed to ensure that the bottom end of the crystal rod 8 can be observed and measured, and the heat exchange efficiency of the crystal rod 8 can be improved through the portion between the two grooves 1031 that is closer to the crystal rod 8 .
  • the staff or the observation equipment 18 can observe the growth of the crystal rod 8 in the heat exchange cylinder 1 from multiple angles and directions, so that the staff or the observation equipment 18 can more fully observe the growth of the crystal rod 8 situation to ensure the normal growth of crystal rod 8.
  • one or more grooves 1031 can also be provided, and the groove positions are set at positions corresponding to the first heat exchange structure 11 according to actual capturing and observation requirements.
  • the heat exchange cylinder 1 is used to form the crystal rod 8, and the portion of the inner shell of the third cylinder section 103 close to the crystal pulling axis that is not provided with the groove 1031 is in contact with the crystal rod.
  • the distance between 8 is greater than or equal to 10mm.
  • the groove 1031 is not provided on the third barrel section 103
  • the distance between the part of the crystal rod 8 and the crystal rod 8 is relatively close.
  • the third cylinder section 103 is close to the crystal rod 8
  • the distance between the part on the inner surface of the inner shell of the axis that is not provided with the groove 1031 and the crystal rod 8 is greater than or equal to 10 mm, it can be avoided that the third cylinder section 103 is close to the inner surface of the inner shell of the crystal pulling axis.
  • the portion where the groove 1031 is not provided is close to the crystal rod 8 , the crystal growth of the crystal rod 8 is affected.
  • the first cylinder section 101 and the second cylinder section 102 are connected and arranged from bottom to top.
  • the first The cylinder section 101 includes a first heat exchange structure 4 for forming an observation channel and a second heat exchange structure 44 connected with the first heat exchange structure 4 .
  • the second cylinder section 102 is located at the upper part of the first heat exchange structure 4.
  • the second cylinder section 102 can increase the overall height of the crystal pulling heat exchange device, increase the longitudinal temperature gradient of the growth of the crystal rod 8 inside the crystal pulling heat exchange device, and thereby increase the growth rate of the crystal rod 8; at the same time, through the second cylinder section 102 performs heat exchange on the upper part of the crystal rod 8, which can improve the heat exchange efficiency of the crystal rod 8.
  • the crystal pulling heat exchange device provided in this application not only ensures the formation of an observation channel, but also improves the heat exchange efficiency and increases the growth rate of the crystal rod 8, thereby shortening the crystal pulling time and reducing the production cost.
  • the heat exchange medium enters the cooling chamber 5 of the heat exchange cylinder 1 through the cooling chamber inlet 2, and flows out through the cooling chamber outlet 3.
  • the heat exchange medium absorbs the heat generated by the crystal rod 8, which can improve the heat exchange between the crystal rod 8 and the heat exchange medium.
  • the crystal pulling heat exchange device provided by the embodiment of the present application is used in crystal pulling equipment and includes a heat exchange cylinder 1.
  • the heat exchange cylinder 1 has a cooling chamber inlet 2 and a cooling chamber outlet 3.
  • the heat exchange cylinder 1 includes a third cylinder section 103 and a first cylinder section 101 arranged in communication from bottom to top.
  • the first cylinder section 101 includes a heat exchange structure used to form an observation channel.
  • the third cylinder A groove 1031 opening toward the inside of the third barrel section 103 is provided on the inner surface of the inner shell of the body section 103 close to the crystal pulling axis.
  • the groove 1031 is at least partially located on the observation path of the observation channel.
  • the crystal pulling heat exchange device is arranged above the crucible, the crystal rod 8 is grown inside the heat exchange cylinder 1, the cooling medium enters the cooling chamber of the heat exchange cylinder 1 through the cooling chamber inlet 2, and passes through the cooling chamber outlet. 3 flows out, so that the crystal rod 8 can exchange heat with the heat exchange cylinder 1.
  • the staff or observation equipment 18 observes the growth process of the crystal rod 8 in the heat exchange cylinder 1 through the observation channel of the heat exchange structure, and can grasp it in real time.
  • the growth rate of the crystal rod 8 and the growth environment in the furnace ensure the normal growth of the crystal rod 8 .
  • the crystal pulling heat exchange device provided in this application not only ensures the formation of an observation channel, but also improves the heat exchange efficiency and increases the growth rate of the crystal rod 8, thereby shortening the crystal pulling time and reducing the production cost.
  • the third cylinder section 103 is located at the lower part of the first cylinder section 101. The third cylinder section 103 can increase the overall height of the crystal pulling heat exchange device, thereby improving the longitudinal growth direction of the crystal rod 8 inside the crystal pulling heat exchange device. The temperature gradient further increases the growth rate of the crystal rod 8 .
  • the heat exchange structure includes an inclined heat exchange part that is inclined relative to the crystal pulling axis, and the heat exchange surface of the inclined heat exchange part is inclined. Flat or inclined arc surface.
  • the heat exchange structure has an inclined heat exchange part, an observation channel that is inclined relative to the crystal pulling axis can be formed by the inclined heat exchange part.
  • the inclined heat exchange part can be a cone or pyramid structure coaxially arranged with the crystal pulling axis. , or it can be a sloping plate structure disposed at a circumferential part of the first cylinder section 101 . With this structure, the heat exchange structure is simple and easy to process.
  • the staff When observing, the staff usually stand on the side of the crystal pulling equipment and look tilted towards the single crystal furnace.
  • the tilted heat exchange surface When the tilted heat exchange surface is relative to the crystal pulling axis, When tilted, an observation channel can be formed that matches the observation path, making it more convenient for staff to observe.
  • a plurality of grooves 1031 are provided on the inner surface of the inner shell of the third barrel section 103 close to the crystal pulling axis.
  • the plurality of grooves 1031 are sequentially distributed along the circumferential direction of the third barrel section 103, and the plurality of grooves 1031 are located on the observation path of the observation channel.
  • the first barrel section 101 has a tapered barrel structure, and the inner surface of the groove 1031 is at least partially consistent with the inner surface of the inner shell of the tapered barrel structure close to the crystal pulling axis.
  • the tapered cylinder structure can be a cone structure or a pyramid structure coaxially arranged with the crystal pulling axis.
  • the tapered cylinder structure includes an inner shell and an outer shell. The inner shell is arranged close to the crystal pulling axis. Between the inner shell and the outer shell There is a cooling medium in between to achieve heat exchange.
  • the inner surface of the groove 1031 is at least partially connected to the inner surface of the inner shell of the tapered cylinder structure close to the crystal pulling axis.
  • the upper inner surface of the groove 1031 is at least partially connected to the cone.
  • the inner surface of the inner shell of the lower part of the tapered cylinder is connected; at this time, the entire circumference of the tapered cylinder structure can be an inclined heat exchange part, and the heat exchange surface of the inclined heat exchange part is the inner shell of the tapered cylinder structure.
  • the tapered slope on the surface of the body and the groove 1031 on the third cylinder section 103 can be connected with any position around the tapered cylinder structure to form an observation channel.
  • the tapered cylinder is wide at the top and narrow at the bottom, which is convenient for staff or
  • the observation device 18 observes the crystal rod 8 in the heat exchange cylinder 1 from the observation channel composed of the conical slope and the groove 1031 passing through above.
  • the third cylinder section 103 can be a straight section, and the heat exchange cylinder 1 can also include a second cylinder section 102.
  • the lower end of the second cylinder section 102 is connected to the first cylinder section 101.
  • the section 102 can further increase the overall height of the crystal pulling heat exchange device, thereby further increasing the longitudinal temperature gradient of the growth of the crystal rod 8 inside the crystal pulling heat exchange device, thereby further increasing the growth rate of the crystal rod 8 .
  • the third A plurality of grooves 1031 are provided on the inner surface of the inner shell of the barrel section 103 close to the crystal pulling axis.
  • the plurality of grooves 1031 are distributed along the circumferential direction of the third barrel section 103.
  • Each of the plurality of grooves 1031 can be connected with the cone.
  • the tapered inclined surfaces of the cylindrical structure connect to form multiple observation paths. Since the tapered cylinder structure has inclined slopes all around, the plurality of grooves 1031 can be connected with the tapered slopes along the circumferential direction of the tapered cylinder structure.
  • the grooves 1031 can be provided with two, three, four, etc., using this structure, the staff or the observation equipment 18 can monitor the growth of the crystal rod 8 in the heat exchange cylinder 1 from multiple angles and directions. The observation enables the staff or the observation equipment 18 to more fully observe the growth of the crystal rod 8 and ensure the normal growth of the crystal rod 8 .
  • one groove 1031 may also be provided.
  • the first barrel section 101 includes a first heat exchange structure 4 for forming an observation channel and a heat exchanger connected to the first heat exchange structure 4.
  • the first heat exchange structure 4 may include an inclined heat exchange part and a connecting heat exchange part. Both sides of the inclined heat exchange part are connected to the second heat exchange structure 44 through the connecting heat exchange parts respectively, so that the cooling medium can flow into the inclined heat exchange part. Further heat exchange is performed in the hot part and the connecting heat exchange part to improve the heat exchange efficiency of the crystal rod 8 .
  • the inclined heat exchange part and the connecting heat exchange part form an observation channel, and the heat exchange surface connecting the heat exchange part is a connecting plane or a connecting arc surface.
  • the second heat exchange structure 44 can be a straight section, and the first heat exchange structure 4 can be an inclined heat exchange structure that is inclined toward the outside of the heat exchange cylinder 1 relative to the crystal pulling axis.
  • the second heat exchange structure 44 is closer to the crystal pulling axis, which can improve the heat exchange efficiency between the second heat exchange structure 44 and the crystal rod 8;
  • the heat exchange cylinder 1 can also include a second cylinder section 102 , the lower end of the third cylinder is connected to the second heat exchange structure 44.
  • the second cylinder section 102 can further increase the overall height of the crystal pulling heat exchange device, thereby further improving the growth efficiency of the crystal rod 8 inside the crystal pulling heat exchange device.
  • the longitudinal temperature gradient further increases the growth rate of the crystal rod 8 .
  • the crystal rod 8 can be observed through the observation channel of the first heat exchange structure 4, and the crystal rod 8 can be heat exchanged through the second heat exchange structure 44, thereby improving the heat exchange between the crystal rod 8 and the crystal puller. heat exchange efficiency between devices.
  • the central angle of the first heat exchange structure 4 is greater than 60° and less than 180°.
  • the first heat exchange structure 4 and the second heat exchange structure 44 together form the side wall of the first cylinder section 101.
  • the central angle of the first heat exchange structure 4 refers to the cross section perpendicular to the axis of the heat exchange cylinder 1.
  • the first heat exchange structure 4 has fewer parts, the distance between the crystal rod 8 and the first heat exchange structure 4 is far, and the heat exchange efficiency of the crystal rod 8 is lower; when the central angle is greater than 60° and less than 180°, while ensuring that the first heat exchange structure 4 can form a good observation channel, the portion of the first cylinder section 101 that is not provided with the first heat exchange structure 4 is The distance between the crystal rods 8 is relatively close, which can further improve the heat exchange efficiency of the crystal rods 8 .
  • the inner and outer walls of the second heat exchange structure 44 of the first cylinder section 101 are both vertical cylindrical surfaces, and the outer surface of the inclined heat exchange part is an inclined plane or an inclined arc surface.
  • the outer diameter of the segment 101 is the same as or different from the outer diameter of the second heat exchange structure 44 .
  • a plurality of grooves 1031 are provided on the inner surface of the inner shell of the third barrel section 103 close to the crystal pulling axis.
  • a plurality of grooves 1031 are connected to the observation channel of the first barrel section 101 to ensure that the bottom end of the crystal rod 8 can be observed and measured.
  • two grooves 1031 are provided, and the two grooves 1031 can be symmetrically distributed on both sides of the first heat exchange structure 4.
  • the two grooves 1031 can be used to heat the heat exchange cylinder 1
  • the crystal rod 8 is fully observed to ensure that the bottom end of the crystal rod 8 can be observed and measured, and the heat exchange efficiency of the crystal rod 8 can be improved through the portion between the two grooves 1031 that is closer to the crystal rod 8 .
  • the staff or the observation equipment 18 can observe the growth of the crystal rod 8 in the heat exchange cylinder 1 from multiple angles and directions, so that the staff or the observation equipment 18 can more fully observe the growth of the crystal rod 8 situation to ensure the normal growth of crystal rod 8.
  • one or more grooves 1031 can also be provided, and the groove positions are set at positions corresponding to the first heat exchange structure 11 according to actual capturing and observation requirements.
  • the groove 1031 is disposed through the inner surface of the inner shell of the third barrel section 103 close to the crystal pulling axis.
  • both the upper and lower ends of the groove 1031 are open, and the inner surface of the groove 1031 includes a bottom surface and two side surfaces.
  • the bottom surface of the groove 1031 may be an arc surface or a flat surface.
  • the heat exchange cylinder 1 is used to form the crystal rod 8, and the portion of the inner shell of the third cylinder section 103 close to the crystal pulling axis that is not provided with the groove 1031 is in contact with the crystal rod.
  • the distance between 8 is greater than or equal to 10mm.
  • the third cylinder The distance between the section 103 without the groove 1031 and the crystal rod 8 is relatively close.
  • the growth state of the crystal rod 8 will be affected.
  • the distance between the inner surface of the inner shell of the third cylinder section 103 that is close to the crystal pulling axis and which is not provided with the groove 1031 and the crystal rod 8 is greater than or equal to 10 mm, it can prevent the third cylinder section 103 from being close to the crystal pulling axis.
  • the portion of the inner surface of the inner shell without the groove 1031 is close to the crystal rod 8 , it affects the crystal growth of the crystal rod 8 .
  • staff or observation equipment 18 can observe the crystal rod 8 in the heat exchange cylinder 1 through the observation channel on the first cylinder section 101 and the groove 1031 on the third cylinder section 103. Since The groove 1031 part can form an observation channel for observing the bottom of the crystal rod 8, so that the staff or the observation equipment 18 can more fully observe the crystal rod 8 in the heat exchange cylinder 1; at the same time, the third cylinder section 103 is close to the crystal rod 8. On the inner surface of the inner shell of the axis, the distance between the part without groove 1031 and the crystal rod 8 in the heat exchange cylinder 1 is relatively close, which is conducive to heat exchange between the crystal rod 8 and the part without groove 1031 , improve the heat exchange efficiency of the crystal rod 8.
  • the crystal pulling heat exchange device not only ensures the formation of an observation channel, but also improves the heat exchange efficiency and increases the growth rate of the crystal rod 8, thereby shortening the crystal pulling time and reducing the production cost.
  • the third cylinder section 103 is located at the lower part of the first cylinder section 101. The third cylinder section 103 can increase the overall height of the crystal pulling heat exchange device, thereby improving the longitudinal growth direction of the crystal rod 8 inside the crystal pulling heat exchange device. The temperature gradient further increases the growth rate of the crystal rod 8 .
  • This application also provides a crystal pulling equipment, including the crystal pulling heat exchange device provided in any embodiment of the above solution.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

一种拉晶换热装置和拉晶设备，所述拉晶换热装置包括换热筒体，换热筒体具有开设冷却腔入口和冷却腔出口的冷却腔，换热筒体包括由下至上连通布置的第一筒体段和第二筒体段，沿第一筒体段的周向方向，第一筒体段包括用于形成观察通道的第一换热结构以及与第一换热结构连通的第二换热结构。所述拉晶设备包括上述拉晶换热装置。

Description

一种拉晶换热装置和拉晶设备
本申请要求在2022年8月24日提交中国专利局，申请号为202222235392.2，申请名称为“一种拉晶换热装置和拉晶设备”的中国专利申请的优先权，以及在2022年7月12日提交中国专利局，申请号为202221794965.9，申请名称为“一种拉晶换热装置和拉晶设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光伏技术领域，特别是涉及一种拉晶换热装置和拉晶设备。
背景技术
目前，晶体硅电池因其转换效率高、技术成熟等优势，在太阳能电池市场中占据主导地位。
晶棒是晶体硅电池的基本原料。在采用直拉法制作晶棒时，通常会采用提高晶体生长速度的方式，提高生产效率、降低成本。现有技术中，一般利用高效的换热装置吸收结晶时释放的潜热，以加快晶体生长速度。在实际使用过程中，为了便于对晶棒生长情况的实时观察，换热装置会设计为上宽下窄的结构，此时，换热装置整体高度较低，换热装置内部的纵向温度梯度较小，导致晶棒和换热装置之间的换热效率较低，制约了晶棒的生长速度。
申请内容
本申请的目的在于提供一种拉晶换热装置和拉晶设备，用于在能够观察晶棒生长情况的同时，提高换热效率，提高晶棒生长速度。
为了实现上述目的，本申请提供如下技术方案：
一种拉晶换热装置，应用于拉晶设备，包括换热筒体，换热筒体具有开设冷却腔入口和冷却腔出口的冷却腔，换热筒体包括由下至上连通布置的第一筒体段和第二筒体段，沿第一筒体段的周向方向，第一筒体段包括用于形成观察通道的第一换热结构以及与第一换热结构连通的第二换热结构。
与现有技术相比，本申请提供的拉晶换热装置中，第一筒体段和第二筒体段由下至上连通布置，沿第一筒体段的周向方向，第一筒体段包括用于形 成观察通道的第一换热结构以及与第一换热结构连通的第二换热结构。此时，第二筒体段位于第一换热结构的上部，通过第二筒体段可以增加拉晶换热装置的整体高度，提高拉晶换热装置内部晶棒生长的纵向温度梯度，进而提高晶棒的生长速度；同时，通过第二筒体段对晶棒的上部进行换热，可以提高晶棒的换热效率。由此可见，本申请提供的拉晶换热装置在保证形成观察通道的同时，提高了换热效率，提高了晶棒生长速度，进而缩短了拉晶时间，降低了生产成本。
可选的，在上述拉晶换热装置中，换热筒体靠近拉晶轴线的内壳体的两侧表面上均设置有多个第一凹坑，且内壳体的一侧表面上的第一凹坑和另一侧表面上的第一凹坑交错分布。如此设置，通过第一凹坑可以提升换热筒体靠近拉晶轴线的内壳体的内表面的辐射吸热面积，使得晶棒的换热效率更高；同时能够进一步的减小换热筒体和晶棒之间的间距，提高换热筒体的换热能力。
可选的，在上述拉晶换热装置中，第一凹坑的直径为1mm-20mm，位于同一表面的相邻两个第一凹坑之间的间距大于第一凹坑的直径，第一凹坑的厚度小于换热筒体靠近拉晶轴线的内壳体的壁厚。如此设置，优化第一凹坑的尺寸和分布位置，保证换热筒体具有良好换热能力的同时，换热筒体亦具有良好的强度。
可选的，在上述拉晶换热装置中，换热筒体靠近拉晶轴线的内壳体的两侧表面中的一侧表面上设置有多个第二凹坑，另一侧表面上设置有多个凸起。如此设置，通过第二凹坑可以提升换热筒体靠近拉晶轴线的内壳体的内表面的辐射吸热面积，使得晶棒的换热效率更高。
可选的，在上述拉晶换热装置中，第二凹坑和凸起的直径均为1mm-20mm，相邻两个第二凹坑之间的间距大于或等于第二凹坑的直径，相邻两个凸起的间距大于或等于凸起的直径，第二凹坑和凸起的厚度均小于换热筒体靠近拉晶轴线的内壳体的壁厚。如此设置，优化第二凹坑和凸起的尺寸及分布位置，保证换热筒体具有良好换热能力的同时，换热筒体亦具有良好的强度。
可选的，在上述拉晶换热装置中，换热筒体靠近拉晶轴线的内壳体的表面上设置有多个顶角朝拉晶轴线的金字塔结构，金字塔结构的底边边长为10um-5mm，金字塔结构的顶角角度δ为：36°≤δ≤60°。如此设置，通过金字塔结构可以提升换热筒体靠近拉晶轴线的内壳体的内表面的辐射吸热面积； 同时能够进一步的减小换热筒体和晶棒之间的间距，提高换热筒体的换热能力。
可选的，在上述拉晶换热装置中，第一换热结构包括相对于拉晶轴线倾斜的倾斜换热部，倾斜换热部的换热面为倾斜平面或倾斜弧面。如此设置，由于倾斜换热部相对于拉晶轴线倾斜，可以便于形成与观察路径相适应的的观察通道。
可选的，在上述拉晶换热装置中，第一换热结构还包括连接换热部，倾斜换热部通过连接换热部与第二换热结构连通，倾斜换热部和连接换热部围成观察通道，连接换热部的换热面为连接平面或连接弧面。如此设置，连接换热部结构简单，便于加工。
可选的，在上述拉晶换热装置中，以第一筒体段的轴线为中心，第一换热结构的圆心角大于60°且小于180°。如此设置，在保证第一换热结构能够形成良好的观察通道的同时，第一筒体段上未设置第一换热结构的部分与晶棒之间的距离较近，能够进一步提高晶棒的换热效率。
可选的，在上述拉晶换热装置中，第二筒体段的长度与第一筒体段的长度比值为0.1-0.8。如此设置，既能够防止第二筒体段较短时不能形成较大的纵向温度梯度，又能够防止第二筒体段较长时增加加工和安装成本。
可选的，在上述拉晶换热装置中，换热筒体靠近拉晶轴线的内壳体的内表面上设置有用于提高换热筒体辐射吸热能力的发黑处理层。如此设置，可以提高换热筒体靠近拉晶轴线的内壳体的内表面的辐射吸热能力。
可选的，换热筒体还包括第三筒体段，第三筒体段位于第一换热结构和第二换热结构下方；第三筒体段靠近拉晶轴线的内壳体的内表面上设置有开口朝第三筒体段内部的凹槽，凹槽至少部分位于观察通道的观察路径上。如此设置，工作人员或观测设备可以通过第一筒体段上的观察通道和第三筒体段上凹槽观察换热筒体内的晶棒，且通过第三筒体段可以增加拉晶换热装置的整体高度，从而提高拉晶换热装置内部晶棒生长的纵向温度梯度，进一步提高晶棒的生长速度。
可选的，第一换热结构包括相对于拉晶轴线倾斜的倾斜换热部，倾斜换热部的换热面为倾斜平面或倾斜弧面，凹槽的内表面至少部分与倾斜换热部的换热面相接。如此设置，当换热结构具有倾斜换热部时，可以通过倾斜换热部形成相对于拉晶轴线倾斜的观察通道。
可选的，沿第三筒体段的周向方向，第三筒体段靠近拉晶轴线的内壳体 的内表面上设置有多个凹槽；多个凹槽与第一筒体段的观察通道相连接，保证晶棒底端部分能够被观察和测量。
可选的，沿第三筒体段的轴线方向，凹槽贯通设置于第三筒体段靠近拉晶轴线的内壳体的内表面上。采用这种结构，工作人员或观测设备可以多角度多方位的对换热筒体内的晶棒生长情况进行观察，使得工作人员或观测设备能够更加充分的观察晶棒的生长情况，确保晶棒的正常生长。
可选的，换热筒体内用于形成晶棒，第三筒体段靠近拉晶轴线的内壳体的内表面上未设置凹槽的部分与晶棒之间的距离大于或等于10mm。如此设置，可以避免第三筒体段靠近拉晶轴线的内壳体的内表面上未设置凹槽的部分距离晶棒较近时影响晶棒的拉晶生长。
一种拉晶换热装置，应用于拉晶设备，包括换热筒体，换热筒体具有开设冷却腔入口和冷却腔出口的冷却腔，换热筒体包括由下至上连通布置的第三筒体段和第一筒体段，第一筒体段包括用于形成观察通道的换热结构，第三筒体段靠近拉晶轴线的内壳体的内表面上设置有开口朝第三筒体段内部的凹槽，凹槽至少部分位于观察通道的观察路径上。
与现有技术相比，工作人员或观测设备可以通过第一筒体段上的观察通道和第三筒体段上凹槽观察换热筒体内的晶棒，由于凹槽部分可以形成对晶棒底部进行观察的观察通道，使得工作人员或观测设备能够更加充分的观察换热筒体内晶棒；同时，第三筒体段靠近拉晶轴线的内壳体的内表面上，未设置凹槽的部分与换热筒体内晶棒之间的距离较近，有利于晶棒与未设置凹槽的部分进行热量交换，提高晶棒的换热效率。由此可见，本申请提供的拉晶换热装置在保证形成观察通道的同时，提高了换热效率，提高了晶棒的生长速度，进而缩短了拉晶时间，降低了生产成本。另外，第三筒体段位于第一筒体段的下部，通过第三筒体段可以增加拉晶换热装置的整体高度，从而提高拉晶换热装置内部晶棒生长的纵向温度梯度，进一步提高晶棒的生长速度。
可选的，换热结构包括相对于拉晶轴线倾斜的倾斜换热部，倾斜换热部的换热面为倾斜平面或倾斜弧面，凹槽的内表面至少部分与倾斜换热部的换热面相接。如此设置，当换热结构具有倾斜换热部时，可以通过倾斜换热部形成相对于拉晶轴线倾斜的观察通道。
可选的，沿第三筒体段的周向方向，第三筒体段靠近拉晶轴线的内壳体的内表面上设置有多个凹槽。采用这种结构，工作人员或观测设备可以多角 度多方位的对换热筒体内的晶棒生长情况进行观察，使得工作人员或观测设备能够更加充分的观察晶棒的生长情况，确保晶棒的正常生长。
可选的，第一筒体段为锥形筒体结构，凹槽的内表面至少部分与锥形筒体结构靠近拉晶轴线的内壳体的内表面相接。如此设置，便于工作人员或观测设备从上方通过的锥形斜面和凹槽组成的观察通道观察换热筒体内的晶棒。
可选地，沿第三筒体段的周向方向，第三筒体段靠近拉晶轴线的内壳体的内表面上设置有多个凹槽，多个凹槽沿第三筒体段的周向分布。如此设置，使得多个凹槽均位于观察通道的观察路径上。
可选的，沿第一筒体段的周向方向，第一筒体段包括用于形成观察通道的第一换热结构以及与第一换热结构连通的第二换热结构，凹槽的内表面至少部分与第一换热结构的换热面相接。
可选的，沿第三筒体段的周向方向，第三筒体段靠近拉晶轴线的内壳体的内表面上设置有多个凹槽，多个凹槽与第一筒体段的观察通道相连接，保证晶棒底端部分能够被观察和测量。
可选的，沿第三筒体段的轴线方向，凹槽贯通设置于第三筒体段靠近拉晶轴线的内壳体的内表面上。采用这种结构，凹槽加工时可以从底部进行加工形成，使得凹槽加工更加方便，同时，当凹槽贯通设置时，工作人员或观测设备能够更加方便的观察到晶棒的底部部分。
可选的，换热筒体内用于形成晶棒，第三筒体段靠近拉晶轴线的内壳体的内表面上未设置凹槽的部分与晶棒之间的距离大于或等于10mm。如此设置，可以避免第三筒体段靠近拉晶轴线的内壳体的内表面上未设置凹槽的部分距离晶棒较近时影响晶棒的拉晶生长。
本申请还提供一种拉晶设备，包括如上述方案任一项的拉晶换热装置。
与现有技术相比，本申请提供的拉晶设备的有益效果与上述技术方案提供的拉晶换热装置的有益效果相同，此处不做赘述。
附图说明
此处所说明的附图用来提供对本申请的进一步理解，构成本申请的一部分，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1为本申请实施例中的第一种拉晶换热装置的示意图；
图2为本申请实施例中的第一种拉晶换热装置的俯视图；
图3为图2沿O-O线的剖视图；
图4为图2沿N-N线的剖视图；
图5为本申请实施例中拉晶设备的单晶炉的示意图之一；
图6为本申请实施例中内壳体上正反凹坑结构的示意图；
图7为图6沿N-N线的剖视图；
图8为本申请实施例中内壳体上冲压凹坑结构的示意图；
图9为图8沿N-N线的剖视图；
图10为本申请实施例中内壳体上金字塔结构的示意图一；
图11为本申请实施例中内壳体上金字塔结构的示意图二；
图12为本申请实施例中的第二种拉晶换热装置的示意图；
图13为本申请实施例中的第二种拉晶换热装置的底部示意图；
图14为本申请实施例中的第二种拉晶换热装置的仰视图一；
图15为本申请实施例中的第二种拉晶换热装置的仰视图二；
图16为图15沿A-A的剖视图；
图17为本申请实施例中的第三种拉晶换热装置的示意图一；
图18为本申请实施例中的第三种拉晶换热装置的示意图二；
图19为本申请实施例中的第三种拉晶换热装置的仰视图。
附图标记：
1-换热筒体，101-第一筒体段，102-第二筒体段，103-第三筒体段，1031-凹槽，2-冷却腔入口，3-冷却腔出口，4-第一换热结构，41-倾斜换热部，42-连接换热部，43-竖直换热部，44-第二换热结构，5-冷却腔，6-炉盖，7-主炉室，8-晶棒，9-保温层，10-加热器，11-导流筒，12-硅液，13-观察窗，14-第一凹坑，15-第二凹坑，16-凸起，17-金字塔结构，18-观测设备。
具体实施例
为了使本申请所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
需要说明的是，当元件被称为“固定于”或“设置于”另一个元件，它可以直接在另一个元件上或者间接在该另一个元件上。当一个元件被称为是“连接于”另一个元件，它可以是直接连接到另一个元件或间接连接至该另一个 元件上。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。“若干”的含义是一个或一个以上，除非另有明确具体的限定。
在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
目前，晶体硅电池因其转换效率高、技术成熟等优势，在太阳能电池市场中占据主导地位。
通过研究和成本预测核算，降低单晶硅直拉法生产成本最有效的手段就是提高晶体的生长速度，根据简易热力学模型可以得出晶体最大生长速度由于熔体的温度梯度dTl/dz≥0，则最大晶体生长速度其中，ρS是硅密度(g/cm3)，Ks是热传导系数(J/(K·cm·s))，L是硅的结晶潜热(J/g)，dTs/dz是结晶界面温度梯度(K/cm)。
由上述简易热力学模型可知，要想获得较高的生长速率，需要提高单晶硅生长的纵向温度梯度。单晶生长界面处纵向温度梯度提升后能够尽快将晶棒产生的热量带走，提高换热效率，同时能够避免硅液及加热器产生的热量 传递到晶棒附近。
晶棒是晶体硅电池的基本原料。在采用直拉法制作晶棒时，通常会采用提高晶体生长速度的方式，提高生产效率、降低成本。现有技术中，一般利用高效的换热装置吸收结晶时释放的潜热，以加快晶体生长速度。在实际使用过程中，为了便于对晶棒生长情况的实时观察，换热装置会设计为上宽下窄的结构，此时，换热装置整体高度较低，换热装置内部的纵向温度梯度较小，导致晶棒和换热装置之间的换热效率较低，制约了晶棒的生长速度。
请参阅图1至图5，本申请实施例提供的拉晶换热装置应用于拉晶设备，包括换热筒体1，换热筒体1具有开设冷却腔入口2和冷却腔出口3的冷却腔5，换热筒体1包括由下至上连通布置的第一筒体段101和第二筒体段102，沿第一筒体段101的周向方向，第一筒体段101包括用于形成观察通道的第一换热结构4以及与第一换热结构4连通的第二换热结构44。
具体实施时：拉晶换热装置设置于坩埚上方，晶棒8在换热筒体1内部生长形成，冷却介质经过冷却腔入口2进入换热筒体1的冷却腔5内，并经过冷却腔出口3流出，使得晶棒8能够与换热筒体1之间进行换热，工作人员或观测设备通过第一换热结构4的观察通道观察换热筒体1内晶棒8的生长过程，可以实时掌握晶棒8的生长速度及炉内的生长环境，确保晶棒8正常生长。
通过上述拉晶换热装置的结构和具体实施过程可知，第一筒体段101和第二筒体段102由下至上连通布置，沿第一筒体段101的周向方向，第一筒体段101包括用于形成观察通道的第一换热结构4以及与第一换热结构4连通的第二换热结构44。此时，第二筒体段102位于第一换热结构4的上部，通过第二筒体段102可以增加拉晶换热装置的整体高度，提高拉晶换热装置内部晶棒8生长的纵向温度梯度，进而提高晶棒8的生长速度；同时，通过第二筒体段102对晶棒8的上部进行换热，可以提高晶棒8的换热效率。由此可见，本申请提供的拉晶换热装置在保证形成观察通道的同时，提高了换热效率，提高了晶棒8生长速度，进而缩短了拉晶时间，降低了生产成本。另外，换热介质经过冷却腔入口2进入换热筒体1的冷却腔5内，并经过冷却腔出口3流出，通过换热介质吸收晶棒8产生的热量，可以提高晶棒8与换热筒体1之间换热的效率。
如图5所示，拉晶设备包括单晶炉，拉晶换热装置设置在单晶炉中，单晶炉包括主炉室7和设置在主炉室7上方用于封盖主炉室7的炉盖6，主炉 室7内设置有坩埚、加热器10、导流筒11以及保温层9，坩埚内存放有硅液12，加热器10设置在坩埚周围，用于加热坩埚中的硅液12，导流筒11设置在硅液12上方，换热筒体1套设在导流筒11内，晶棒8在换热筒体1内生长形成，保温层9设置在加热器10和导流筒11外侧，起到隔热保温的作用，炉盖6上设置有观察窗13，工作人员或观测设备可以通过观察窗13观察到炉内，并通过第一换热结构4的观察通道观察换热筒体1内部的晶棒8。
如图6和图7所示，换热筒体1靠近拉晶轴线的内壳体的内表面和外表面上均设置有多个第一凹坑14，且内壳体内表面上的第一凹坑14和外表面上的第一凹坑14交错分布。采用这种结构，通过第一凹坑14可以提升换热筒体1的靠近拉晶轴线的内壳体的内表面的辐射吸热面积，使得晶棒8的换热效率更高；同时能够进一步的减小换热筒体1和晶棒8之间的间距，提高换热筒体1的换热能力。
在一些实施例中，第一凹坑14的直径D为1mm-20mm，优选为5mm，位于同一表面的相邻两个第一凹坑14之间的间距d大于第一凹坑14的直径D，优选d＝2D，第一凹坑14的厚度h小于换热筒体1的靠近拉晶轴线的内壳体的壁厚k，优选h＝1/2k，其中，换热筒体1的内壳体是指靠近拉晶轴线的壳体，换热筒体1的外壳体是指靠近换热筒体1外部的壳体，换热筒体1的内壳体和外壳体之间形成冷却腔5，换热筒体1的内壳体的内表面是指内壳体朝向拉晶轴线的表面，换热筒体1的内壳体的外表面是指内壳体朝向冷却腔5的表面。本实施例，第一凹坑的厚度指第一凹坑的深度。采用这种结构，优化第一凹坑14的尺寸和分布位置，保证换热筒体1具有良好换热能力的同时，换热筒体1亦具有良好的强度。
如图8和图9所示，换热筒体1的靠近拉晶轴线的内壳体的内表面上设置有多个第二凹坑15，换热筒体1的靠近拉晶轴线的内壳体的外表面上设置有多个凸起16；或者，换热筒体1的靠近拉晶轴线的内壳体的内表面上设置有多个凸起16，换热筒体1的靠近拉晶轴线的内壳体的外表面上设置有多个第二凹坑15。采用这种结构，通过第二凹坑15可以提升换热筒体1的靠近拉晶轴线的内壳体的内表面的辐射吸热面积，使得晶棒8的换热效率更高；同时能够进一步的增加内壳体与冷却腔5的换热效率。
在一些实施例中，第二凹坑15和凸起16的直径D均为1mm-20mm，优选为5mm，相邻两个第二凹坑15之间的间距d大于或等于第二凹坑15 的直径D，相邻两个凸起16的间距d大于或等于凸起16的直径D，优选d＝D，第二凹坑15和凸起16的厚度h均小于换热筒体1的靠近拉晶轴线的内壳体的壁厚k，优选h为1mm-3mm。本实施例，第二凹坑的厚度指第二凹坑的深度，凸起16的厚度是指凸起相对内壳体表面的高度。采用这种结构，优化第二凹坑15和凸起16的尺寸和分布位置，保证换热筒体1具有良好换热能力的同时，换热筒体1亦具有良好的强度。
如图10和图11所示，换热筒体1的靠近拉晶轴线的内壳体的内表面上设置有多个顶角朝拉晶轴线的金字塔结构17，金字塔结构17的底边边长L为10um-5mm，优选L＝2mm，金字塔结构17的顶角角度δ为：36°≤δ≤60°。采用这种结构，通过金字塔结构17可以提升换热筒体1的靠近拉晶轴线的内壳体的内表面的辐射吸热面积，同时更多的吸收晶棒8辐射的热量，使得晶棒8的换热效率更高；同时能够进一步的减小换热筒体1和晶棒8之间的间距，提高换热筒体1的换热能力。
如图1、图2和图4所示，作为一种可能的实现方式，本实施例中第一换热结构4包括相对于拉晶轴线倾斜的倾斜换热部41，倾斜换热部41的换热面为倾斜平面或倾斜弧面。倾斜换热部41的两侧通过连接板与第二换热结构44连接，连接板内部不设置冷却腔5。采用这种结构，第一换热结构4结构简单，加工方便，由于工作人员观察时，通常是站在拉晶设备的侧方，倾斜朝单晶炉内看去，当倾斜换热面相对于拉晶轴线倾斜时，可以形成与观察路径相适应的的观察通道，使得工作人员观察更加方便。
在一些实施例中，第一换热结构4还包括连接换热部42，倾斜换热部41的两侧分别通过连接换热部42与第二换热结构44连通，使得冷却介质可以流入至倾斜换热部41和连接换热部42中进行进一步的换热，提高晶棒8的换热效率。倾斜换热部41和连接换热部42围成观察通道，连接换热部42的换热面为连接平面或连接弧面。采用这种结构，连接换热部42结构简单，便于加工，本实施例优选连接换热部42为结构更加简单的连接平面。
如图2和图4所示，作为一种可能的实现方式，本实施例中以第一筒体段101的轴线为中心，第一换热结构4的圆心角大于60°且小于180°。第一换热结构4和第二换热结构44共同构成第一筒体段101的侧壁，第一换热结构4的圆心角是指垂直于换热筒体1轴线的截面上，换热筒体1的轴心与第一换热结构4两端的连线之间的夹角，当第一换热结构4的圆心角小于60°时，第一换热结构4形成的观察通道较窄，观察不方便；当第一换热结构4 的圆心角大于180°时，换热筒体1的周向上第一换热结构4占的比例过大，换热筒体1的周向上未设置第一换热结构4的部分较少，晶棒8与第一换热结构4之间的距离较远，晶棒8的换热效率较低；当圆心角大于60°且小于180°时，在保证第一换热结构4能够形成良好的观察通道的同时，第一筒体段101上未设置第一换热结构4的部分与晶棒8之间的距离较近，能够进一步提高晶棒8的换热效率。
如图1和图4所示，本实施例第一筒体段101的第二换热结构44的内壁和外壁均为竖直圆柱面，倾斜换热部41的外表面为倾斜平面或倾斜弧面，第二筒体段102为直筒段，第一筒体段101的外径与第二换热结构44的外径相同或不同。
在一种可选方式中，第二筒体段102的长度与第一筒体段101的长度比值为0.1-0.8。当第二筒体段102的长度与第一筒体段101的长度比值小于0.1时，第二筒体段102较短，不能形成较大的纵向温度梯度，对晶棒8换热效率增幅程度较小；当第二筒体段102的长度与第一筒体段101的长度比值大于0.8时，第二筒体段102较长，增加加工和安装成本；当第二筒体段102的长度与第一筒体段101的长度比值为0.1-0.8时，既能够防止第二筒体段102较短时不能形成较大的纵向温度梯度，又能够防止第二筒体段102较长时增加加工和安装成本。
作为一种可能的实现方式，换热筒体1的靠近拉晶轴线的内壳体的内表面上设置有用于提高换热筒体1辐射吸热能力的发黑处理层。发黑处理是化学表面处理的一种常用手段，原理是先使用物理方法(如喷砂)或化学方法(如化学腐蚀)将金属表面变粗糙，然后在通过CVD(化学气相沉积)、PVD(物理气相沉积)或电镀等其他方法使得金属表面黑化，达到提高辐射吸收率的效果。本实施例中发黑处理层可以为石墨烯发黑处理层、化学盐浴发黑处理层以及电镀发黑处理层中的一种或多种，但不限定这几种处理方式。采用这种结构，可以提高换热筒体1的靠近拉晶轴线的内壳体的内表面的辐射吸热能力，进而提高晶棒8的换热效率。
如图5所示，本申请实施例还提供一种拉晶设备，包括单晶炉和拉晶换热装置，其中，拉晶换热装置为如以上任一实施例所描述的拉晶换热装置。拉晶换热装置设置在单晶炉中，单晶炉包括主炉室7和设置在主炉室7上方用于封盖主炉室7的炉盖6，主炉室7内设置有坩埚、加热器10、导流筒11以及保温层9，坩埚内存放有硅液12，加热器10设置在坩埚周围，用于加 热坩埚中的硅液12，导流筒11设置在硅液12上方，换热筒体1套设在导流筒11内，晶棒8在换热筒体1内生长形成，保温层9设置在加热器10和导流筒11外侧，起到隔热保温的作用，炉盖6上设置有观察窗13，工作人员或观测设备可以通过观察窗13观察到炉内，并通过第一换热结构4的观察通道观察换热筒体1内部的晶棒8。
在一种可选的方式中，如图12至图19所示，换热筒体还包括第三筒体段103，第三筒体段203位于第一换热结构4和第二换热结构44下方；第三筒体段103靠近拉晶轴线的内壳体的内表面上设置有开口朝第三筒体段内部的凹槽1031，凹槽1031至少部分位于观察通道的观察路径上。
图12至图19中的拉晶换热装置为图1至图5中的拉晶换热装置的进一步的细化实施例，在第三筒体段103靠近拉晶轴线的内壳体的内表面上设置有开口朝第三筒体段内部的凹槽1031的情况下，因此工作人员或观测设备18可以通过第一筒体段101上的观察通道和第三筒体段103上凹槽1031观察换热筒体1内的晶棒8，由于凹槽1031部分可以形成对晶棒8底部进行观察的观察通道，使得工作人员或观测设备18能够更加充分的观察换热筒体1内晶棒8；同时，第三筒体段103靠近拉晶轴线的内壳体的内表面上，未设置凹槽1031的部分与换热筒体1内晶棒8之间的距离较近，有利于晶棒8与未设置凹槽1031的部分进行热量交换，提高晶棒8的换热效率。由此可见，本申请提供的拉晶换热装置在保证形成观察通道的同时，提高了换热效率，提高了晶棒8的生长速度，进而缩短了拉晶时间，降低了生产成本。另外，第三筒体段103位于第一筒体段101的下部，通过第三筒体段103可以增加拉晶换热装置的整体高度，从而提高拉晶换热装置内部晶棒8生长的纵向温度梯度，进一步提高晶棒8的生长速度。
在该实施方式中，对于上述结构，如图12、图13、图16、图17所示，进一步地，第一换热结构4包括相对于拉晶轴线倾斜的倾斜换热部，倾斜换热部的换热面为倾斜平面或倾斜弧面。当换热结构具有倾斜换热部时，可以通过倾斜换热部形成相对于拉晶轴线倾斜的观察通道，示例性的，倾斜换热部可以为与拉晶轴线同轴设置的圆锥或棱锥结构，亦可以为设置于第一筒体段101周向部分位置的斜板结构。采用这种结构，换热结构的结构简单，加工方便，由于工作人员观察时，通常是站在拉晶设备的侧方，倾斜朝单晶炉内看去，当倾斜换热面相对于拉晶轴线倾斜时，可以形成与观察路径相适应的观察通道，使得工作人员观察更加方便。
如图14和图19所示，进一步地，沿第三筒体段103的周向方向，第三筒体段103靠近拉晶轴线的内壳体的内表面上设置有多个凹槽1031。多个凹槽1031沿第三筒体段103的周向方向依次分布，且多个凹槽1031均位于观察通道的观察路径上。采用这种结构，工作人员或观测设备18可以多角度多方位的对换热筒体1内的晶棒8生长情况进行观察，使得工作人员或观测设备18能够更加充分的观察晶棒8的生长情况，确保晶棒8的正常生长。
如图17至图19所示，沿第一筒体段101的周向方向，第一筒体段101包括用于形成观察通道的第一换热结构4以及与第一换热结构4连通的第二换热结构44。其中，第一换热结构4可以包括倾斜换热部和连接换热部，倾斜换热部的两侧分别通过连接换热部与第二换热结构44连通，使得冷却介质可以流入至倾斜换热部和连接换热部中进行进一步的换热，提高晶棒8的换热效率。倾斜换热部和连接换热部围成观察通道，连接换热部的换热面为连接平面或连接弧面。示例性的，第二换热结构44可以为直筒段，第一换热结构4可以为相对于拉晶轴线向换热筒体1外侧倾斜的倾斜换热结构，此时，相对于第一换热结构4，第二换热结构44距离拉晶轴线更近，能够提高第二换热结构44和晶棒8之间的换热效率；换热筒体1还可以包括第二筒体段102，第三筒体的下端与第二换热结构44相连，通过第二筒体段102可以进一步增加拉晶换热装置的整体高度，从而能够进一步提高拉晶换热装置内部晶棒8生长的纵向温度梯度，进而进一步提高晶棒8的生长速度。采用这种结构，既能够通过第一换热结构4的观察通道对晶棒8进行观察，又能够通过第二换热结构44对晶棒8进行换热，提高晶棒8与拉晶换热装置之间的换热效率。需要说明的是，图17中的换热筒体1相比于图1中的换热筒体1的区别在于，在换热筒体1包括的第三筒体段103靠近拉晶轴线的内壳体的内表面上设置有开口朝第三筒体段内部的凹槽1031。
在一些实施例中，以第一筒体段101的轴线为中心，第一换热结构4的圆心角大于60°且小于180°。第一换热结构4和第二换热结构44共同构成第一筒体段101的侧壁，第一换热结构4的圆心角是指垂直于换热筒体1轴线的截面上，换热筒体1的轴心与第一换热结构4两端的连线之间的夹角；当第一换热结构4的圆心角小于60°时，第一换热结构4形成的观察通道较窄，观察不方便；当第一换热结构4的圆心角大于180°时，换热筒体1的周向上第一换热结构4占的比例过大，换热筒体1的周向上未设置第一换热结构4的部分较少，晶棒8与第一换热结构4之间的距离较远，晶棒8的换热效率 较低；当圆心角大于60°且小于180°时，在保证第一换热结构4能够形成良好的观察通道的同时，第一筒体段101上未设置第一换热结构4的部分与晶棒8之间的距离较近，能够进一步提高晶棒8的换热效率。
示例性的，本实施例第一筒体段101的第二换热结构44的内壁和外壁均为竖直圆柱面，倾斜换热部的外表面为倾斜平面或倾斜弧面，第一筒体段101的外径与第二换热结构44的外径相同或不同。
如图18和图19所示，进一步地，沿第三筒体段103的周向方向，第三筒体段103靠近拉晶轴线的内壳体的内表面上设置有多个凹槽1031，多个凹槽1031与第一筒体段101的观察通道相连接，保证晶棒8底端部分能够被观察和测量。示例性的，凹槽1031设置有两个，两个凹槽1031可以对称分布在第一换热结构4的两侧，此时，既能够通过两个凹槽1031对换热筒体1内的晶棒8进行充分的观察，保证晶棒8底端部分能够被观察和测量，又能够通过两个凹槽1031之间距离晶棒8较近的部分提高晶棒8的换热效率。采用这种结构，工作人员或观测设备18可以多角度多方位的对换热筒体1内的晶棒8生长情况进行观察，使得工作人员或观测设备18能够更加充分的观察晶棒8的生长情况，确保晶棒8的正常生长。此外，凹槽1031也可以设置为一个或多个，凹槽位置根据实际捕捉和观察需求设置在与第一换热结构11相应的位置。
如图16所示，进一步地，换热筒体1内用于形成晶棒8，第三筒体段103靠近拉晶轴线的内壳体的内表面上未设置凹槽1031的部分与晶棒8之间的距离大于或等于10mm。当第三筒体段103靠近拉晶轴线的内壳体的内表面上未设置凹槽1031的部分与晶棒8之间的距离小于10mm时，第三筒体段103上未设置凹槽1031的部分与晶棒8之间的距离较近，晶棒8生长时无法正常测量或观察晶棒8底部的生长状态而影响晶棒8的生长，因此，当第三筒体段103靠近拉晶轴线的内壳体的内表面上未设置凹槽1031的部分与晶棒8之间的距离大于或等于10mm时，可以避免第三筒体段103靠近拉晶轴线的内壳体的内表面上未设置凹槽1031的部分距离晶棒8较近时影响晶棒8的拉晶生长。
与现有技术相比，采用本实施例的拉晶设备时，第一筒体段101和第二筒体段102由下至上连通布置，沿第一筒体段101的周向方向，第一筒体段101包括用于形成观察通道的第一换热结构4以及与第一换热结构4连通的第二换热结构44。此时，第二筒体段102位于第一换热结构4的上部，通过 第二筒体段102可以增加拉晶换热装置的整体高度，提高拉晶换热装置内部晶棒8生长的纵向温度梯度，进而提高晶棒8的生长速度；同时，通过第二筒体段102对晶棒8的上部进行换热，可以提高晶棒8的换热效率。由此可见，本申请提供的拉晶换热装置在保证形成观察通道的同时，提高了换热效率，提高了晶棒8生长速度，进而缩短了拉晶时间，降低了生产成本。另外，换热介质经过冷却腔入口2进入换热筒体1的冷却腔5内，并经过冷却腔出口3流出，通过换热介质吸收晶棒8产生的热量，可以提高晶棒8与换热筒体1之间换热的效率。
此外，请参阅图12至图19，本申请实施例提供的拉晶换热装置应用于拉晶设备，包括换热筒体1，换热筒体1具有开设冷却腔入口2和冷却腔出口3的冷却腔，换热筒体1包括由下至上连通布置的第三筒体段103和第一筒体段101，第一筒体段101包括用于形成观察通道的换热结构，第三筒体段103靠近拉晶轴线的内壳体的内表面上设置有开口朝第三筒体段103内部的凹槽1031，凹槽1031至少部分位于观察通道的观察路径上。
具体实施时：拉晶换热装置设置于坩埚上方，晶棒8在换热筒体1内部生长形成，冷却介质经过冷却腔入口2进入换热筒体1的冷却腔内，并经过冷却腔出口3流出，使得晶棒8能够与换热筒体1之间进行换热，工作人员或观测设备18通过换热结构的观察通道观察换热筒体1内晶棒8的生长过程，可以实时掌握晶棒8的生长速度及炉内的生长环境，确保晶棒8正常生长。
有别于图1至图5中的拉晶换热装置，在采用图12至图19中的技术方案的情况下，工作人员或观测设备18可以通过第一筒体段101上的观察通道和第三筒体段103上凹槽1031观察换热筒体1内的晶棒8，由于凹槽1031部分可以形成对晶棒8底部进行观察的观察通道，使得工作人员或观测设备18能够更加充分的观察换热筒体1内晶棒8；同时，第三筒体段103靠近拉晶轴线的内壳体的内表面上，未设置凹槽1031的部分与换热筒体1内晶棒8之间的距离较近，有利于晶棒8与未设置凹槽1031的部分进行热量交换，提高晶棒8的换热效率。由此可见，本申请提供的拉晶换热装置在保证形成观察通道的同时，提高了换热效率，提高了晶棒8的生长速度，进而缩短了拉晶时间，降低了生产成本。另外，第三筒体段103位于第一筒体段101的下部，通过第三筒体段103可以增加拉晶换热装置的整体高度，从而提高拉晶换热装置内部晶棒8生长的纵向温度梯度，进一步提高晶棒8的生长速度。
对于图12、图13、图16、图17中拉晶换热装置的结构，进一步地，换热结构包括相对于拉晶轴线倾斜的倾斜换热部，倾斜换热部的换热面为倾斜平面或倾斜弧面。当换热结构具有倾斜换热部时，可以通过倾斜换热部形成相对于拉晶轴线倾斜的观察通道，示例性的，倾斜换热部可以为与拉晶轴线同轴设置的圆锥或棱锥结构，亦可以为设置于第一筒体段101周向部分位置的斜板结构。采用这种结构，换热结构的结构简单，加工方便，由于工作人员观察时，通常是站在拉晶设备的侧方，倾斜朝单晶炉内看去，当倾斜换热面相对于拉晶轴线倾斜时，可以形成与观察路径相适应的观察通道，使得工作人员观察更加方便。
如图14和图19所示，进一步地，沿第三筒体段103的周向方向，第三筒体段103靠近拉晶轴线的内壳体的内表面上设置有多个凹槽1031。多个凹槽1031沿第三筒体段103的周向方向依次分布，且多个凹槽1031均位于观察通道的观察路径上。采用这种结构，工作人员或观测设备18可以多角度多方位的对换热筒体1内的晶棒8生长情况进行观察，使得工作人员或观测设备18能够更加充分的观察晶棒8的生长情况，确保晶棒8的正常生长。
如图12至图16所示，进一步地，第一筒体段101为锥形筒体结构，凹槽1031的内表面至少部分与锥形筒体结构靠近拉晶轴线的内壳体的内表面相接。锥形筒体结构可以为与拉晶轴线同轴设置的圆锥结构或棱锥结构，锥形筒体结构包括内壳体和外壳体，内壳体靠近拉晶轴线设置，内壳体和外壳体之间具有冷却介质以实现换热，凹槽1031的内表面至少部分与锥形筒体结构靠近拉晶轴线的内壳体的内表面相接，即指凹槽1031的上部内表面至少部分与锥形筒体下部内壳体的内表面相连接；此时，锥形筒体结构的一周均可以为倾斜换热部，倾斜换热部的换热面即为位于锥形筒体结构的内壳体内表面上的锥形斜面，第三筒体段103上的凹槽1031可以与锥形筒体结构一周的任一位置相接形成观察通道，锥形筒体上宽下窄，便于工作人员或观测设备18从上方通过的锥形斜面和凹槽1031组成的观察通道观察换热筒体1内的晶棒8。其中，第三筒体段103可以为直筒段，换热筒体1还可以包括第二筒体段102，第二筒体段102的下端与第一筒体段101相连，通过第二筒体段102可以进一步增加拉晶换热装置的整体高度，从而能够进一步提高拉晶换热装置内部晶棒8生长的纵向温度梯度，进而进一步提高晶棒8的生长速度。
如图13和图14所示，进一步地，沿第三筒体段103的周向方向，第三 筒体段103靠近拉晶轴线的内壳体的内表面上设置有多个凹槽1031，多个凹槽1031沿第三筒体段103的周向分布，多个凹槽1031均可以与锥形筒体结构的锥形斜面相接形成多个观察路径。由于锥形筒体结构一周均具有倾斜斜面，多个凹槽1031沿锥形筒体结构的周向均可以与锥形斜面相接。示例性的，凹槽1031可以设置两个、三个、四个等等，采用这种结构，工作人员或观测设备18可以多角度多方位的对换热筒体1内的晶棒8生长情况进行观察，使得工作人员或观测设备18能够更加充分的观察晶棒8的生长情况，确保晶棒8的正常生长。此外，如图15所示，凹槽1031也可以设置为一个。
如图17至图19所示，沿第一筒体段101的周向方向，第一筒体段101包括用于形成观察通道的第一换热结构4以及与第一换热结构4连通的第二换热结构44。其中，第一换热结构4可以包括倾斜换热部和连接换热部，倾斜换热部的两侧分别通过连接换热部与第二换热结构44连通，使得冷却介质可以流入至倾斜换热部和连接换热部中进行进一步的换热，提高晶棒8的换热效率。倾斜换热部和连接换热部围成观察通道，连接换热部的换热面为连接平面或连接弧面。示例性的，第二换热结构44可以为直筒段，第一换热结构4可以为相对于拉晶轴线向换热筒体1外侧倾斜的倾斜换热结构，此时，相对于第一换热结构4，第二换热结构44距离拉晶轴线更近，能够提高第二换热结构44和晶棒8之间的换热效率；换热筒体1还可以包括第二筒体段102，第三筒体的下端与第二换热结构44相连，通过第二筒体段102可以进一步增加拉晶换热装置的整体高度，从而能够进一步提高拉晶换热装置内部晶棒8生长的纵向温度梯度，进而进一步提高晶棒8的生长速度。采用这种结构，既能够通过第一换热结构4的观察通道对晶棒8进行观察，又能够通过第二换热结构44对晶棒8进行换热，提高晶棒8与拉晶换热装置之间的换热效率。
在一些实施例中，以第一筒体段101的轴线为中心，第一换热结构4的圆心角大于60°且小于180°。第一换热结构4和第二换热结构44共同构成第一筒体段101的侧壁，第一换热结构4的圆心角是指垂直于换热筒体1轴线的截面上，换热筒体1的轴心与第一换热结构4两端的连线之间的夹角；当第一换热结构4的圆心角小于60°时，第一换热结构4形成的观察通道较窄，观察不方便；当第一换热结构4的圆心角大于180°时，换热筒体1的周向上第一换热结构4占的比例过大，换热筒体1的周向上未设置第一换热结构4的部分较少，晶棒8与第一换热结构4之间的距离较远，晶棒8的换热效率 较低；当圆心角大于60°且小于180°时，在保证第一换热结构4能够形成良好的观察通道的同时，第一筒体段101上未设置第一换热结构4的部分与晶棒8之间的距离较近，能够进一步提高晶棒8的换热效率。
示例性的，本实施例第一筒体段101的第二换热结构44的内壁和外壁均为竖直圆柱面，倾斜换热部的外表面为倾斜平面或倾斜弧面，第一筒体段101的外径与第二换热结构44的外径相同或不同。
如图18和图19所示，进一步地，沿第三筒体段103的周向方向，第三筒体段103靠近拉晶轴线的内壳体的内表面上设置有多个凹槽1031，多个凹槽1031与第一筒体段101的观察通道相连接，保证晶棒8底端部分能够被观察和测量。示例性的，凹槽1031设置有两个，两个凹槽1031可以对称分布在第一换热结构4的两侧，此时，既能够通过两个凹槽1031对换热筒体1内的晶棒8进行充分的观察，保证晶棒8底端部分能够被观察和测量，又能够通过两个凹槽1031之间距离晶棒8较近的部分提高晶棒8的换热效率。采用这种结构，工作人员或观测设备18可以多角度多方位的对换热筒体1内的晶棒8生长情况进行观察，使得工作人员或观测设备18能够更加充分的观察晶棒8的生长情况，确保晶棒8的正常生长。此外，凹槽1031也可以设置为一个或多个，凹槽位置根据实际捕捉和观察需求设置在与第一换热结构11相应的位置。
如图13和图18所示，进一步地，沿第三筒体段103的轴线方向，凹槽1031贯通设置于第三筒体段103靠近拉晶轴线的内壳体的内表面上。此时，凹槽1031上下两端均开口，凹槽1031的内表面包括底面和两个侧面，凹槽1031的底面可以为弧形面或平面。采用这种结构，凹槽1031加工时可以从底部进行加工形成，使得凹槽1031加工更加方便，同时，当凹槽1031贯通设置时，工作人员或观测设备18能够更加方便的观察到晶棒8的底部部分。此外，凹槽1031除了采用贯通设置，凹槽1031靠近第一筒体段101的一端可以与第三筒体段103的底面之间存在距离；凹槽1031靠近第二换热结构44的一端可以不贯穿第三筒体段103靠近拉晶轴线的内壳体，但凹槽与第一换热结构4连接处需完全贯穿第三筒体段103。
如图16所示，进一步地，换热筒体1内用于形成晶棒8，第三筒体段103靠近拉晶轴线的内壳体的内表面上未设置凹槽1031的部分与晶棒8之间的距离大于或等于10mm。当第三筒体段103靠近拉晶轴线的内壳体的内表面上未设置凹槽1031的部分与晶棒8之间的距离小于10mm时，第三筒体 段103上未设置凹槽1031的部分与晶棒8之间的距离较近，晶棒8生长时无法正常测量或观察晶棒8底部的生长状态而影响晶棒8的生长，因此，当第三筒体段103靠近拉晶轴线的内壳体的内表面上未设置凹槽1031的部分与晶棒8之间的距离大于或等于10mm时，可以避免第三筒体段103靠近拉晶轴线的内壳体的内表面上未设置凹槽1031的部分距离晶棒8较近时影响晶棒8的拉晶生长。
采用上述技术方案的情况下，工作人员或观测设备18可以通过第一筒体段101上的观察通道和第三筒体段103上凹槽1031观察换热筒体1内的晶棒8，由于凹槽1031部分可以形成对晶棒8底部进行观察的观察通道，使得工作人员或观测设备18能够更加充分的观察换热筒体1内晶棒8；同时，第三筒体段103靠近拉晶轴线的内壳体的内表面上，未设置凹槽1031的部分与换热筒体1内晶棒8之间的距离较近，有利于晶棒8与未设置凹槽1031的部分进行热量交换，提高晶棒8的换热效率。由此可见，本申请提供的拉晶换热装置在保证形成观察通道的同时，提高了换热效率，提高了晶棒8的生长速度，进而缩短了拉晶时间，降低了生产成本。另外，第三筒体段103位于第一筒体段101的下部，通过第三筒体段103可以增加拉晶换热装置的整体高度，从而提高拉晶换热装置内部晶棒8生长的纵向温度梯度，进一步提高晶棒8的生长速度。
本申请还提供一种拉晶设备，包括如上述方案任一实施例提供的拉晶换热装置。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (26)

  1. 一种拉晶换热装置，应用于拉晶设备，其特征在于，包括换热筒体，所述换热筒体具有开设冷却腔入口和冷却腔出口的冷却腔，所述换热筒体包括由下至上连通布置的第一筒体段和第二筒体段，沿所述第一筒体段的周向方向，所述第一筒体段包括用于形成观察通道的第一换热结构以及与所述第一换热结构连通的第二换热结构。
  2. 根据权利要求1所述的拉晶换热装置，其特征在于，所述换热筒体靠近拉晶轴线的内壳体的两侧表面上均设置有多个第一凹坑，且内壳体的一侧表面上的第一凹坑和另一侧表面上的第一凹坑交错分布。
  3. 根据权利要求2所述的拉晶换热装置，其特征在于，所述第一凹坑的直径为1mm-20mm，位于同一表面的相邻两个所述第一凹坑之间的间距大于所述第一凹坑的直径，所述第一凹坑的厚度小于所述换热筒体靠近拉晶轴线的内壳体的壁厚。
  4. 根据权利要求1所述的拉晶换热装置，其特征在于，所述换热筒体靠近拉晶轴线的内壳体的两侧表面中的一侧表面上设置有多个第二凹坑，另一侧表面上设置有多个凸起。
  5. 根据权利要求4所述的拉晶换热装置，其特征在于，所述第二凹坑和所述凸起的直径均为1mm-20mm，相邻两个所述第二凹坑之间的间距大于或等于所述第二凹坑的直径，相邻两个所述凸起的间距大于或等于所述凸起的直径，所述第二凹坑和所述凸起的厚度均小于所述换热筒体靠近拉晶轴线的内壳体的壁厚。
  6. 根据权利要求1所述的拉晶换热装置，其特征在于，所述换热筒体靠近拉晶轴线的内壳体的表面上设置有多个顶角朝拉晶轴线的金字塔结构，所述金字塔结构的底边边长为10um-5mm，所述金字塔结构的顶角角度δ为：36°≤δ≤60°。
  7. 根据权利要求1所述的拉晶换热装置，其特征在于，所述第一换热结构包括相对于拉晶轴线倾斜的倾斜换热部，所述倾斜换热部的换热面为倾斜平面或倾斜弧面。
  8. 根据权利要求7所述的拉晶换热装置，其特征在于，所述第一换热结构还包括连接换热部，所述倾斜换热部通过所述连接换热部与所述第二换热结构连通，所述倾斜换热部和所述连接换热部围成所述观察通道，所述连接换热部的换热面为连接平面或连接弧面。
  9. 根据权利要求1-8任一项所述的拉晶换热装置，其特征在于，以所述第一筒体段的轴线为中心，所述第一换热结构的圆心角大于60°且小于180°。
  10. 根据权利要求1-8任一项所述的拉晶换热装置，其特征在于，所述第二筒体段的长度与所述第一筒体段的长度比值为0.1-0.8。
  11. 根据权利要求1-8任一项所述的拉晶换热装置，其特征在于，所述换热筒体靠近拉晶轴线的内壳体的内表面上设置有用于提高所述换热筒体辐射吸热能力的发黑处理层。
  12. 根据权利要求1-8任一项所述的拉晶换热装置，其特征在于，所述换热筒体还包括第三筒体段，所述第三筒体段位于所述第一换热结构和所述第二换热结构下方；
    所述第三筒体段靠近拉晶轴线的内壳体的内表面上设置有开口朝所述第三筒体段内部的凹槽，所述凹槽至少部分位于所述观察通道的观察路径上。
  13. 根据权利要求12所述的拉晶换热装置，其特征在于，所述第一换热结构包括相对于拉晶轴线倾斜的倾斜换热部，所述倾斜换热部的换热面为倾斜平面或倾斜弧面，所述凹槽的内表面至少部分与所述倾斜换热部的换热面相接。
  14. 根据权利要求12所述的拉晶换热装置，其特征在于，沿所述第三筒体段的周向方向，所述第三筒体段靠近拉晶轴线的内壳体的内表面上设置有多个所述凹槽；
    多个所述凹槽与第一筒体段的观察通道相连接，保证晶棒底端部分能够被观察和测量。
  15. 根据权利要求12所述的拉晶换热装置，其特征在于，沿所述第三筒体段的轴线方向，所述凹槽贯通设置于所述第三筒体段靠近拉晶轴线的内壳体的内表面上。
  16. 根据权利要求12所述的拉晶换热装置，其特征在于，所述换热筒体内用于形成晶棒，所述第三筒体段靠近拉晶轴线的内壳体的内表面上未设置所述凹槽的部分与所述晶棒之间的距离大于或等于10mm。
  17. 一种拉晶换热装置，应用于拉晶设备，其特征在于，包括换热筒体，所述换热筒体具有开设冷却腔入口和冷却腔出口的冷却腔，所述换热筒体包括由下至上连通布置的第三筒体段和第一筒体段，所述第一筒体段包括用于 形成观察通道的换热结构，所述第三筒体段靠近拉晶轴线的内壳体的内表面上设置有开口朝所述第三筒体段内部的凹槽，所述凹槽至少部分位于所述观察通道的观察路径上。
  18. 根据权利要求17所述的拉晶换热装置，其特征在于，所述换热结构包括相对于拉晶轴线倾斜的倾斜换热部，所述倾斜换热部的换热面为倾斜平面或倾斜弧面，所述凹槽的内表面至少部分与所述倾斜换热部的换热面相接。
  19. 根据权利要求17所述的拉晶换热装置，其特征在于，沿所述第三筒体段的周向方向，所述第三筒体段靠近拉晶轴线的内壳体的内表面上设置有多个所述凹槽。
  20. 根据权利要求17-19任一项所述的拉晶换热装置，其特征在于，所述第一筒体段为锥形筒体结构，所述凹槽的内表面至少部分与所述锥形筒体结构靠近拉晶轴线的内壳体的内表面相接。
  21. 根据权利要求20所述的拉晶换热装置，其特征在于，沿所述第三筒体段的周向方向，所述第三筒体段靠近拉晶轴线的内壳体的内表面上设置有多个所述凹槽，多个所述凹槽沿所述第三筒体段的周向分布。
  22. 根据权利要求17-19任一项所述的拉晶换热装置，其特征在于，沿所述第一筒体段的周向方向，所述第一筒体段包括用于形成观察通道的第一换热结构以及与所述第一换热结构连通的第二换热结构，所述凹槽的内表面至少部分与所述第一换热结构的换热面相接。
  23. 根据权利要求22所述的拉晶换热装置，其特征在于，沿所述第三筒体段的周向方向，所述第三筒体段靠近拉晶轴线的内壳体的内表面上设置有多个所述凹槽，多个所述凹槽与第一筒体段的观察通道相连接，保证晶棒底端部分能够被观察和测量。
  24. 根据权利要求17所述的拉晶换热装置，其特征在于，沿所述第三筒体段的轴线方向，所述凹槽贯通设置于所述第三筒体段靠近拉晶轴线的内壳体的内表面上。
  25. 根据权利要求17所述的拉晶换热装置，其特征在于，所述换热筒体内用于形成晶棒，所述第三筒体段靠近拉晶轴线的内壳体的内表面上未设置所述凹槽的部分与所述晶棒之间的距离大于或等于10mm。
  26. 一种拉晶设备，其特征在于，包括如权利要求1-25任一项所述的拉晶换热装置。
PCT/CN2023/106628 2022-07-12 2023-07-10 一种拉晶换热装置和拉晶设备 WO2024012417A1 (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN202221794965.9 2022-07-12
CN202221794965.9U CN218291172U (zh) 2022-07-12 2022-07-12 一种拉晶换热装置和拉晶设备
CN202222235392.2U CN218436018U (zh) 2022-08-24 2022-08-24 一种拉晶换热装置和拉晶设备
CN202222235392.2 2022-08-24

Publications (1)

Publication Number Publication Date
WO2024012417A1 true WO2024012417A1 (zh) 2024-01-18

Family

ID=89535434

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/106628 WO2024012417A1 (zh) 2022-07-12 2023-07-10 一种拉晶换热装置和拉晶设备

Country Status (1)

Country Link
WO (1) WO2024012417A1 (zh)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09309787A (ja) * 1996-05-20 1997-12-02 Sumitomo Sitix Corp 単結晶引上げ装置用水冷筒
JP2006001767A (ja) * 2004-06-16 2006-01-05 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法、およびこれに用いる覗き窓ガラス、結晶観察用窓ガラス、シリコン単結晶製造装置
CN212316278U (zh) * 2020-04-28 2021-01-08 四川晶科能源有限公司 一种拉晶生长装置及单晶硅生产设备
CN213925117U (zh) * 2020-08-31 2021-08-10 隆基绿能科技股份有限公司 一种拉晶换热装置及拉晶设备
CN216838269U (zh) * 2021-12-18 2022-06-28 中山市汇创精密科技有限公司 一种单晶提拉速换热器
CN218291172U (zh) * 2022-07-12 2023-01-13 隆基绿能科技股份有限公司 一种拉晶换热装置和拉晶设备
CN218436018U (zh) * 2022-08-24 2023-02-03 隆基绿能科技股份有限公司 一种拉晶换热装置和拉晶设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09309787A (ja) * 1996-05-20 1997-12-02 Sumitomo Sitix Corp 単結晶引上げ装置用水冷筒
JP2006001767A (ja) * 2004-06-16 2006-01-05 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法、およびこれに用いる覗き窓ガラス、結晶観察用窓ガラス、シリコン単結晶製造装置
CN212316278U (zh) * 2020-04-28 2021-01-08 四川晶科能源有限公司 一种拉晶生长装置及单晶硅生产设备
CN213925117U (zh) * 2020-08-31 2021-08-10 隆基绿能科技股份有限公司 一种拉晶换热装置及拉晶设备
CN216838269U (zh) * 2021-12-18 2022-06-28 中山市汇创精密科技有限公司 一种单晶提拉速换热器
CN218291172U (zh) * 2022-07-12 2023-01-13 隆基绿能科技股份有限公司 一种拉晶换热装置和拉晶设备
CN218436018U (zh) * 2022-08-24 2023-02-03 隆基绿能科技股份有限公司 一种拉晶换热装置和拉晶设备

Similar Documents

Publication Publication Date Title
WO2021243993A1 (zh) 一种换热装置及单晶炉
US5394825A (en) Method and apparatus for growing shaped crystals
WO2024012417A1 (zh) 一种拉晶换热装置和拉晶设备
CN218291172U (zh) 一种拉晶换热装置和拉晶设备
CN213925117U (zh) 一种拉晶换热装置及拉晶设备
JP2014527013A (ja) 液冷式熱交換機
JP2014527013A5 (zh)
CN218436018U (zh) 一种拉晶换热装置和拉晶设备
CN105951169B (zh) 一种大梯度可视化管式单晶生长炉
CN202744653U (zh) 一种直拉法制备单晶硅所使用的石墨坩埚
CN212451737U (zh) 一种单晶炉用换热系统及单晶炉
WO2024032332A1 (zh) 一种单晶硅棒拉制装置及拉制方法、换热器及换热组件
CN114737253B (zh) 生长大尺寸蓝宝石单晶板材的单晶炉热场结构及方法
CN208346302U (zh) 一种单晶硅拉单晶用水冷内导
Mao et al. Comparative investigation on the heat transfer performance of an energy storage system with a spiral tube and straight tube: An experimental approach
CN112941616A (zh) 水冷屏和单晶硅生长炉
CN212741575U (zh) 一种换热装置及单晶炉
CN206410567U (zh) 一种固体物料冷却器
CN104611764A (zh) 一种微向下提拉晶体生长炉
CN114381794A (zh) 一种冷却屏及单晶炉
CN107699943A (zh) 制备晶体硅锭的加热器及铸锭炉
CN211367801U (zh) 一种新型直拉单晶炉用冷却装置
JP2014522799A (ja) 化学的気相成長法による物質製造用析出カートリッジ
CN113501527A (zh) 一种制备一氧化硅的方法
CN220039113U (zh) 一种松炉件、石墨化炉及电池生产设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23838909

Country of ref document: EP

Kind code of ref document: A1