WO2024005038A1 - 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 - Google Patents

多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 Download PDF

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WO2024005038A1
WO2024005038A1 PCT/JP2023/023882 JP2023023882W WO2024005038A1 WO 2024005038 A1 WO2024005038 A1 WO 2024005038A1 JP 2023023882 W JP2023023882 W JP 2023023882W WO 2024005038 A1 WO2024005038 A1 WO 2024005038A1
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Prior art keywords
layer
film
content
protective film
multilayer reflective
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PCT/JP2023/023882
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English (en)
French (fr)
Japanese (ja)
Inventor
真徳 中川
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Hoya Corp
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Hoya Corp
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Priority to EP23831478.5A priority Critical patent/EP4550046A1/en
Priority to KR1020247042151A priority patent/KR20250027661A/ko
Priority to JP2024530899A priority patent/JPWO2024005038A1/ja
Priority to TW112124079A priority patent/TW202414072A/zh
Publication of WO2024005038A1 publication Critical patent/WO2024005038A1/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0084—Producing gradient compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings

Definitions

  • the present invention relates to a reflective mask used for manufacturing semiconductor devices, a substrate with a multilayer reflective film used for manufacturing the reflective mask, and a reflective mask blank.
  • the present invention also relates to a method of manufacturing a semiconductor device using the above reflective mask.
  • EUV lithography which is an exposure technology using extreme ultraviolet (hereinafter referred to as EUV) light, has been proposed.
  • a reflective mask consists of a multilayer reflective film formed on a substrate to reflect exposure light, and an absorber that is a patterned absorber film formed on the multilayer reflective film to absorb exposure light. It has a pattern.
  • EUV lithography using a reflective mask a light image reflected by a multilayer reflective film of a reflective mask is transferred onto a semiconductor substrate (transfer target) such as a silicon wafer through a reflective optical system.
  • Patent Document 1 describes reflective mask blanks for manufacturing reflective masks. Specifically, Patent Document 1 describes a substrate, a multilayer reflective film formed on the substrate to reflect exposure light, and a protective film formed on the multilayer reflective film to protect the multilayer reflective film. , a reflective mask blank having an absorber film formed on the protective film that absorbs exposure light is described. Patent Document 1 discloses that a protective film of reflective mask blanks is made of ruthenium (Ru), molybdenum (Mo), niobium (Nb), zirconium (Zr), yttrium (Y), boron (B), and titanium (Ti). , lanthanum (La).
  • Ru ruthenium
  • Mo molybdenum
  • Nb niobium
  • Zr zirconium
  • Y zirconium
  • Y yttrium
  • B boron
  • Ti titanium
  • La lanthanum
  • EUV lithography is an exposure technology using extreme ultraviolet light (EUV light).
  • EUV light is light in the soft X-ray region or vacuum ultraviolet region, and specifically, it is light with a wavelength of about 0.2 to 100 nm.
  • EUV light with a wavelength of 13 to 14 nm for example, a wavelength of 13.5 nm can be used.
  • a reflective mask with an absorber pattern is used in EUV lithography.
  • the EUV light irradiated onto the reflective mask is absorbed in areas where the absorber pattern is present, and reflected in areas where the absorber pattern is not present.
  • the multilayer reflective film is exposed in areas where the absorber pattern is not present.
  • the multilayer reflective film exposed on the surface of the reflective mask reflects EUV light.
  • EUV lithography a light image reflected by a multilayer reflective film (a portion without an absorber pattern) is transferred onto a semiconductor substrate (transfer target) such as a silicon wafer through a reflective optical system.
  • a multilayer film in which elements having different refractive indexes are periodically laminated is generally used.
  • a multilayer reflective film for EUV light with a wavelength of 13 to 14 nm for example, a wavelength of 13.5 nm
  • a Mo film with a low refractive index and a Si film with a high refractive index are alternately stacked for 40 to 60 cycles.
  • a Si periodic laminated film is used.
  • the reflective area (the surface of the multilayer reflective film) in the reflective mask must have a high reflectance for EUV light, which is the exposure light. It is necessary to have
  • the absorber film is processed by etching through a resist pattern or an etching mask pattern.
  • the multilayer reflective film under the absorber film is also damaged by the etching.
  • a protective film is provided between the absorber film and the multilayer reflective film. Therefore, the protective film needs to have high resistance to the etching gas used for etching the absorber film.
  • a metal such as Ru or RuNb is used as a material for the protective film that has high resistance to the etching gas of the absorber film.
  • the outermost surface of the multilayer reflective film is a low refractive index layer such as a Mo film
  • the low refractive index layer is easily oxidized. Oxidation of the low refractive index layer may reduce the reflectance of the reflective mask.
  • a silicon-containing layer such as a Si film may be disposed on the outermost surface of the multilayer reflective film. Note that this silicon-containing layer is a thin film for protecting the multilayer reflective film from oxidation, so it is treated as a part of the protective film in this specification.
  • a thin film, such as a silicon-containing layer, included in a protective film for protecting a multilayer reflective film from oxidation is referred to as a "first layer.”
  • a thin film having high resistance to the etching gas used for etching the absorber film is referred to as a "second layer”.
  • a first layer is disposed on top of the multilayer reflective coating and a second layer is disposed on top of the first layer.
  • the protective film of the substrate with a multilayer reflective film has a structure in which a second layer containing a metal material is arranged on a first layer (for example, a Si thin film) on the multilayer reflective film, a reflective mask is used.
  • a substrate with a multilayer reflective film is subjected to heat treatment in the manufacturing process, a phenomenon may occur in which the reflectance of the substrate with a multilayer reflective film including the multilayer reflective film to EUV light is reduced. Note that the heat treatment of the multilayer reflective film-coated substrate or reflective mask blank is generally performed in some cases to adjust the stress of the multilayer reflective film-coated substrate or reflective mask blank.
  • a multilayer reflective film for EUV light can be formed by heat treatment during the manufacturing process of the reflective mask.
  • a phenomenon may occur in which the reflectance of the substrate decreases. The reason for this is believed to be that silicon in the first layer diffuses into the second layer.
  • it is necessary to prevent silicon in the first layer from diffusing into the second layer.
  • the surface of the first layer (the interface between the first layer and the second layer) is nitrided and/or oxidized. It is possible that On the other hand, nitriding and/or oxidizing the surface of the first layer (interface with the second layer) causes a problem in that the adhesion between the first layer and the second layer decreases. Knowledge has been obtained.
  • the present invention has a protective film that includes a first layer for protecting the multilayer reflective film from oxidation and a second layer that has high resistance to the etching gas used for etching the absorber film.
  • the purpose of the present invention is to improve the adhesion between a first layer and a second layer in a substrate with a multilayer reflective film.
  • the present invention has a protective film including a first layer for protecting the multilayer reflective film from oxidation and a second layer having high resistance to etching gas used for etching the absorber film.
  • a substrate with a multilayer reflective film that can improve adhesion with the first layer and the second layer, maintain high reflectance to EUV light, and maintain high etching resistance of the protective film. The purpose is to obtain a substrate.
  • Another object of the present invention is to obtain a reflective mask blank or a reflective mask that can improve the adhesion between the first layer and the second layer of the protective film.
  • the present invention provides a reflective mask blank or The purpose is to obtain a reflective mask.
  • the present invention has the following configuration.
  • Configuration 1 is a substrate with a multilayer reflective film, which includes a substrate, a multilayer reflective film provided on the substrate, and a protective film provided on the multilayer reflective film,
  • the protective film includes a first layer and a second layer, the first layer is disposed between the second layer and the multilayer reflective film,
  • the protective film includes at least one metal element Em and at least one additional element Ea, and the content of the metal element Em in the second layer is lower than the content of the metal element Em in the first layer.
  • the metal element Em is an element having a Fermi level of ⁇ 4.7 eV or less
  • the additional element Ea is an element having a Fermi level of more than ⁇ 4.7 eV
  • the position x at which the component of the second layer switches to the dominant component of the first layer is defined as an inflection point x. 1
  • the content of the metal element Em is M
  • the content of the additional element Ea is A
  • the ratio A/M at the inflection point x1 is 0.020 or more.
  • This is a substrate with a multilayer reflective film.
  • Structure 2 is the substrate with a multilayer reflective film of Structure 1, in which the metal element Em is one or more elements selected from ruthenium (Ru), rhodium (Rh), and iridium (Ir).
  • the metal element Em is one or more elements selected from ruthenium (Ru), rhodium (Rh), and iridium (Ir).
  • the additive element Ea is Tl, Hf, Ti, Zr, Y, Mn, In, Ga, Cd, Bi, Ta, Pb, Ag, Al, V, Nb, Sn, Zn, Hg, Cr,
  • This is a substrate with a multilayer reflective film of configuration 1 or 2, which is one or more elements selected from Fe, Sb, W, Mo, and Cu.
  • Structure 4 is the substrate with a multilayer reflective film according to any one of Structures 1 to 3, wherein the content A of the additive element Ea at the inflection point x1 is 1 atomic % or more and 15 atomic % or less.
  • Configuration 5 is the substrate with a multilayer reflective film according to any one of Configurations 1 to 4, wherein the content M of the metal element Em at the inflection point x1 is 5 at.% or more and 80 at.% or less.
  • Configuration 6 is the substrate with a multilayer reflective film according to any one of Configurations 1 to 5, wherein the ratio A/M at the inflection point x1 is less than 0.17.
  • the first layer includes silicon (Si) and at least one selected from nitrogen (N) and oxygen (O), and the first layer includes nitrogen (N) and oxygen (O) at the inflection point x1 .
  • Configuration 8 is the multilayer reflective film-coated substrate of Configuration 7, in which the total content of nitrogen (N) and oxygen (O) at the inflection point x1 is 35 atomic % or less.
  • Structure 9 is a reflective mask blank characterized in that an absorber film is provided on the protective film of the multilayer reflective film-coated substrate of any of Structures 1 to 8.
  • Structure 10 is a reflective mask characterized by comprising an absorber pattern obtained by patterning the absorber film of the reflective mask blank of Structure 9.
  • Structure 11 is a method for manufacturing a semiconductor device, which includes a step of performing a lithography process using an exposure apparatus using the reflective mask of Structure 10 to form a transfer pattern on a transfer target.
  • the protective film includes a first layer for protecting the multilayer reflective film from oxidation and a second layer having high resistance to the etching gas used for etching the absorber film.
  • the adhesion between the first layer and the second layer can be improved.
  • the protective film includes a first layer for protecting the multilayer reflective film from oxidation and a second layer having high resistance to the etching gas used for etching the absorber film.
  • a substrate with a multilayer reflective film that can improve adhesion with the first layer and the second layer, maintain high reflectance to EUV light, and maintain high etching resistance of the protective film.
  • a substrate with a film can be obtained.
  • the present invention it is possible to obtain a reflective mask blank or a reflective mask that can improve the adhesion between the first layer and the second layer of the protective film.
  • the present invention provides a reflective mask blank or A reflective mask can be obtained.
  • FIG. 1 is a schematic cross-sectional view showing an example of a substrate with a multilayer reflective film according to the present embodiment.
  • FIG. 1 is a schematic cross-sectional view showing an example of a reflective mask blank according to the present embodiment. It is a cross-sectional schematic diagram which shows another example of the reflective mask blank of this embodiment.
  • FIG. 2 is a schematic cross-sectional view showing an example of a method for manufacturing a reflective mask according to the present embodiment.
  • FIG. 1 is a schematic diagram showing an example of an EUV exposure apparatus. Total content (atomic %) of nitrogen (N) and oxygen (O) (X-axis) at the inflection point x 1 of the second aspect of the protective film of the multilayer reflective film-coated substrate of the present embodiment, and the metal element FIG.
  • FIG. 3 is a diagram for explaining the relationship between the content M of Em and the content A of the additive element Ea, a ratio A/M (Y axis).
  • FIG. 3 is a diagram for explaining the relationship between (x 1 ) (Y axis).
  • FIG. 1 is a schematic cross-sectional view showing an example of a multilayer reflective film-coated substrate 90 of this embodiment.
  • a substrate 90 with a multilayer reflective film shown in FIG. 1 includes a multilayer reflective film 2 and a protective film 3 on a substrate 1 .
  • the protective film 3 has a first layer 32 and a second layer 34 in this order on the multilayer reflective film 2.
  • the multilayer reflective film-coated substrate 90 can further include other thin films such as the back conductive film 5.
  • FIG. 2 is a schematic cross-sectional view showing an example of the reflective mask blank 100 of this embodiment.
  • a reflective mask blank 100 shown in FIG. 2 includes a multilayer reflective film 2 , a protective film 3 , and an absorber film 4 on a substrate 1 .
  • the reflective mask blank 100 can have a back conductive film 5.
  • the multilayer reflective film-coated substrate 90 can further include other thin films such as the resist film 11.
  • FIG. 3 is a schematic cross-sectional view showing another example of the reflective mask blank 100.
  • the reflective mask blank 100 shown in FIG. 3 further includes an etching mask film 6 on the absorber film 4.
  • the reflective mask blank 100 can further include other thin films such as the resist film 11.
  • arranging (forming) thin film B on thin film A (or substrate) means that thin film B is arranged (forming) in contact with the surface of thin film A (or substrate). It also includes cases where it means that there is another thin film C between the thin film A (or substrate) and the thin film B.
  • the thin film B is arranged in contact with the surface of the thin film A (or the substrate) means that there is no intervening other thin film between the thin film A (or the substrate) and the thin film B.
  • thin film A (or substrate) and thin film B are arranged so as to be in direct contact with each other.
  • “above” does not necessarily mean the upper side in the vertical direction. “Above” merely indicates the relative positional relationship between the thin film and the substrate.
  • This embodiment is a substrate 90 with a multilayer reflective film that includes a substrate 1, a multilayer reflective film 2 provided on the substrate 1, and a protective film 3 provided on the multilayer reflective film 2.
  • the multilayer reflective film coated substrate 90 of this embodiment will be specifically described.
  • the substrate 1 preferably has a low coefficient of thermal expansion within the range of 0 ⁇ 5 ppb/° C. in order to prevent distortion of the transferred pattern due to heat during exposure to EUV light.
  • a material having a low coefficient of thermal expansion in this range for example, SiO 2 -TiO 2 glass, multi-component glass ceramics, etc. can be used.
  • the main surface (first main surface) of the substrate 1 on the side on which the transfer pattern (absorber pattern 4a described below) is formed is preferably processed to improve flatness.
  • the flatness is preferably 0.1 ⁇ m or less, more preferably 0.05 ⁇ m or less, particularly Preferably it is 0.03 ⁇ m or less.
  • the second main surface (back surface) opposite to the side on which the transfer pattern is formed is a surface that is fixed to the exposure device by an electrostatic chuck.
  • the flatness is 0.1 ⁇ m or less, more preferably 0.05 ⁇ m or less, particularly preferably 0.03 ⁇ m or less.
  • flatness is a value representing surface warpage (deformation amount) indicated by TIR (Total Indicated Reading).
  • TIR Total Indicated Reading
  • Flatness (TIR) is defined as the plane determined by the least squares method with the surface of the substrate 1 as a reference, and the highest position of the surface of the substrate 1 above this focal plane and the substrate below the focal plane. This is the absolute value of the difference in height from the lowest position on the surface of 1.
  • the surface roughness of the main surface of the substrate 1 on the side where the transferred pattern is formed is preferably 0.1 nm or less in terms of root mean square roughness (Rq). Note that the surface roughness can be measured using an atomic force microscope.
  • the substrate 1 preferably has high rigidity in order to prevent the thin film (such as the multilayer reflective film 2) formed thereon from being deformed due to film stress.
  • the thin film such as the multilayer reflective film 2
  • those having a high Young's modulus of 65 GPa or more are preferred.
  • the multilayer reflective film-coated substrate 90 of the embodiment includes the multilayer reflective film 2.
  • the multilayer reflective film 2 provides the reflective mask 200 with a function of reflecting EUV light.
  • the multilayer reflective film 2 is a multilayer film in which layers each containing elements having different refractive indexes as main components are periodically laminated.
  • the multilayer reflective film 2 consists of a thin film of a light element or its compound (high refractive index layer), which is a high refractive index material, and a thin film (low refractive index layer) of a heavy element or its compound, which is a low refractive index material. ) are alternately stacked for about 40 to 60 periods.
  • the multilayer film used as the multilayer reflective film 2 has a structure in which a high refractive index layer and a low refractive index layer are laminated in this order from the substrate 1 side, with one period having a laminated structure of high refractive index layer/low refractive index layer. can be. Further, the multilayer film may have a structure in which a low refractive index layer and a high refractive index layer are laminated in this order from the substrate 1 side, with one period having a laminated structure of a low refractive index layer/high refractive index layer. . Note that the outermost layer of the multilayer reflective film 2, that is, the surface layer of the multilayer reflective film 2 on the side opposite to the substrate 1 side, is preferably a high refractive index layer.
  • the uppermost layer is It becomes a low refractive index layer.
  • the low refractive index layer constitutes the outermost surface of the multilayer reflective film 2
  • it will be easily oxidized, resulting in a decrease in the reflectance of the reflective mask 200. Therefore, it is preferable to form the multilayer reflective film 2 by further forming a high refractive index layer on the uppermost low refractive index layer.
  • the high refractive index layer formed on the uppermost low refractive index layer can be the first layer 32 of the protective film 3 described later.
  • the maximum The upper layer becomes a high refractive index layer. Therefore, in this case, there is no need to form an additional high refractive index layer.
  • the uppermost high refractive index layer in this case can also serve as the first layer 32 of the protective film 3 described later.
  • a layer containing silicon (Si) can be used as the high refractive index layer.
  • materials containing Si in addition to Si alone, Si compounds containing boron (B), carbon (C), nitrogen (N), oxygen (O), and/or hydrogen (H) can be used. can.
  • a high refractive index layer containing Si a reflective mask 200 with excellent reflectivity for EUV light can be obtained.
  • a single metal selected from molybdenum (Mo), ruthenium (Ru), rhodium (Rh), and platinum (Pt), or an alloy thereof can be used as the low refractive index layer.
  • the low refractive index layer is a molybdenum (Mo) layer and the high refractive index layer is a silicon (Si) layer.
  • Mo molybdenum
  • Si silicon
  • the multilayer reflective film 2 for reflecting EUV light with a wavelength of 13 nm to 14 nm (for example, a wavelength of 13.5 nm) a Mo/Si periodic laminated film in which Mo layers and Si layers are alternately laminated for about 40 to 60 cycles is used. It can be preferably used.
  • the low refractive index layer is a ruthenium (Ru) layer and the high refractive index layer is a silicon (Si) layer.
  • Ru ruthenium
  • Si silicon
  • the multilayer reflective film 2 for reflecting EUV light with a wavelength of 13 nm to 14 nm (for example, a wavelength of 13.5 nm) an Ru/Si periodic laminated film in which Ru layers and Si layers are alternately laminated for about 30 to 40 periods is used. It can be preferably used.
  • the reflectance of the multilayer reflective film 2 alone is usually 65% or more, and the upper limit is usually 73%.
  • the film thickness and period of each constituent layer of the multilayer reflective film 2 can be appropriately selected depending on the exposure wavelength. Specifically, the film thickness and period of each constituent layer of the multilayer reflective film 2 can be selected so as to satisfy the Bragg reflection law.
  • the film thicknesses of the high refractive index layers or the film thicknesses of the low refractive index layers do not necessarily have to be the same.
  • the method for forming the multilayer reflective film 2 is known in the art.
  • the multilayer reflective film 2 can be formed by forming each layer by, for example, ion beam sputtering.
  • a Si film with a thickness of about 4 nm is first formed on the substrate 1 using a Si target, and then a Si film with a thickness of about 3 nm is formed using a Mo target.
  • the multilayer reflective film 2 is formed by forming a Mo film of about 100 mL and laminating 40 to 60 cycles (the outermost layer is a Si film). Note that in the case of 60 cycles, the number of steps increases compared to 40 cycles, but the reflectance to EUV light can be increased.
  • the multilayer reflective film coated substrate 90 of this embodiment has a predetermined protective film 3 on the multilayer reflective film 2.
  • the absorber film 4 is etched to form the absorber pattern 4a. Since the protective film 3 has high etching resistance, damage to the surface of the multilayer reflective film 2 can be suppressed when the absorber film 4 is etched. Therefore, by providing a predetermined protective film 3 on the multilayer reflective film 2, damage to the surface of the multilayer reflective film 2 can be suppressed when manufacturing the reflective mask 200 using the multilayer reflective film coated substrate 90. Can be done. Therefore, the reflective mask 200 obtained has good reflectance characteristics with respect to EUV light.
  • the predetermined protective film 3 that can be used for the multilayer reflective film coated substrate 90 of this embodiment is sometimes referred to as "the protective film 3 of this embodiment.”
  • the protective film 3 of this embodiment includes a first layer 32 and a second layer 34.
  • the first layer 32 is arranged between the second layer 34 and the multilayer reflective film 2 .
  • the first layer 32 is a thin film that has the function of protecting the multilayer reflective film 2 from oxidation.
  • the first layer 32 is part of the protective film 3.
  • the first layer 32 can also serve as the top layer of the multilayer reflective film 2.
  • the second layer 34 is a thin film having a function of having high resistance to the etching gas used for etching the absorber film 4.
  • the second layer 34 needs to be a thin film that has high reflectance to EUV light and high etching resistance to etching gas.
  • the multilayer reflective film coated substrate 90 is protected against EUV light by heat treatment in the manufacturing process of the reflective mask.
  • a phenomenon in which the reflectance decreases may occur. The reason for this is thought to be that a predetermined element in the first layer 32 (an element that exhibits the function of the first layer 32) diffuses into the second layer 34.
  • the surface of the first layer 32 (the interface between the first layer 32 and the second layer 34) is , nitriding and/or oxidizing.
  • the adhesion between the first layer 32 and the second layer 34 is reduced. Knowledge has been obtained that problems arise. If the adhesion between the first layer 32 and the second layer 34 decreases, there is a risk that film peeling defects will occur.
  • the protective film 3 of this embodiment includes at least one metal element Em and at least one additive element Ea. That is, the first layer 32 and the second layer 34 constituting the protective film 3 can contain the metal element Em and/or the additive element Ea. By containing the metal element Em, the protective film 3 of this embodiment can have high etching resistance against the etching gas of the absorber film 4. Moreover, the protective film 3 of this embodiment can improve the adhesion between the first layer 32 and the second layer 34 by including the additive element Ea. Therefore, the protective film 3 of this embodiment can suppress the occurrence of film peeling defects. In other words, the protective film 3 of this embodiment provides a substrate with a multilayer reflective film that can improve the adhesion between the first layer 32 and the second layer 34 while maintaining the high etching resistance of the protective film 3. You can get 90.
  • the protective film 3 contains at least one metal element Em.
  • the metal element Em is an element having a Fermi level of ⁇ 4.7 eV or less.
  • the content (atomic %) of the metal element Em is indicated by the symbol "M”.
  • the metal element Em is also referred to as the Em element.
  • the metal element Em is an element (metal element) that functions as the protective film 3. Since the metal element Em has a Fermi level of -4.7 eV or less, it can be used in chlorine (Cl)-based gases, bromine (Br)-based gases, fluorine (F)-based gases, as well as nitrogen and /Or has low reactivity with gases containing oxygen as a constituent element. Therefore, when the metal element Em is used as a material for the protective film 3, deterioration of the material is less likely to occur, and the function of the protective film 3 is less likely to deteriorate.
  • the Fermi level of a certain element refers to the value of the energy of the Fermi level of a pure substance of a single element when the vacuum level is the origin (zero).
  • the Fermi level of a metal material can be energy with a negative work function value.
  • the metal element Em is Ru
  • the work function of a pure substance of Ru element is 4.7 eV
  • the Fermi level of Ru is ⁇ 4.7 eV.
  • the metal element Em can be an element having a Fermi level lower than the Fermi level of Ru. It is known that Ru can be preferably used as an element constituting the protective film 3. Therefore, by using an element (metallic element) having a Fermi level that is the same as or lower than the Fermi level of Ru (Fermi level with a large negative value), a thin film with high etching resistance can be obtained. .
  • elements having a Fermi level lower than the Fermi level of Ru include Ru, Tc, Os, Co, Re, Rh, Pd, Au, Ni, Ir, and Pt. At least one selected from these elements can be used as the metal element Em.
  • the metal element Em included in the protective film 3 of this embodiment is preferably one or more elements selected from ruthenium (Ru), rhodium (Rh), and iridium (Ir).
  • the metal element Em included in the protective film 3 of this embodiment can be made of only one or more elements selected from ruthenium (Ru), rhodium (Rh), and iridium (Ir). By using these elements, it is possible to more reliably obtain the protective film 3 having high etching resistance while maintaining high reflectance.
  • the etching resistance of the protective film 3 can be improved.
  • the protective film 3 contains Ru as the metal element Em the optical characteristics of the protective film 3 can be appropriately adjusted.
  • the protective film 3 includes at least one additive element Ea.
  • the additive element Ea is an element having a Fermi level exceeding ⁇ 4.7 eV.
  • the content (atomic %) of the additive element Ea is indicated by the symbol "A”.
  • the additive element Ea is also referred to as Ea element.
  • the adhesion between the first layer 32 and the second layer 34 that constitute the protective film 3 can be improved. Since the additive element Ea is an element having a Fermi level exceeding ⁇ 4.7 eV, it has high reactivity with other elements. Therefore, when the protective film 3 contains the additive element Ea, it can contribute to improving the adhesion between the first layer 32 and the second layer 34.
  • the additive element Ea can be an element having a Fermi level higher than the Fermi level of Cu.
  • Cu can be used as an element that can improve the adhesion between two types of thin films. Therefore, by using an element having a Fermi level equal to or higher than the Fermi level of Cu (a Fermi level with a small negative value), the first layer 32 and the second layer 34 can be closely bonded. It can contribute to improving sexual performance.
  • the additive elements Ea contained in the protective film 3 of this embodiment include Tl, Hf, Ti, Zr, Y, Mn, In, Ga, Cd, Bi, Ta, Pb, Ag, Al, V, Nb, Sn, and Zn. , Hg, Cr, Fe, Sb, W, Mo, and Cu.
  • the additive elements Ea contained in the protective film 3 of this embodiment include Tl, Hf, Ti, Zr, Y, Mn, In, Ga, Cd, Bi, Ta, Pb, Ag, Al, V, Nb, Sn, and Zn. , Hg, Cr, Fe, Sb, W, Mo, and Cu.
  • the additive element Ea included in the protective film 3 of this embodiment is at least one selected from Ti, Zr, Ta, Nb, and Cr. Moreover, it is more preferable to use at least one selected from Ta, Nb, and Cr as the additive element Ea included in the protective film 3 of this embodiment. By using these elements, it is possible to improve the adhesion between the first layer 32 and the second layer 34 and to improve the cleaning resistance.
  • Cr When nitrogen is included near the surface of the first layer 32 (the interface between the first layer 32 and the second layer 34), Cr may be used as the additive element Ea included in the protective film 3 of this embodiment. is even more preferable. This is because Cr, when nitrided, lowers the extinction coefficient, alleviates the absorption of EUV light, and can contribute to improving the reflectance. On the other hand, when Hf, Ti, Zr, Y, V, and Nb are nitrided, they tend to increase the extinction coefficient, strengthen the absorption of EUV light, and lower the reflectance.
  • Hf, V, and Cr When oxygen is included near the surface of the first layer 32 (the interface between the first layer 32 and the second layer 34), Hf, V, and It is preferable to use at least one selected from Cr. This is because when Hf, V, and Cr are oxidized, they can lower the extinction coefficient, alleviate absorption of EUV light, and contribute to improving the reflectance. On the other hand, when Ti, Zr, Y, and Nb are nitrided, they tend to increase the extinction coefficient, strengthen the absorption of EUV light, and lower the reflectance.
  • the metal element Em can be included in both the first layer 32 and the second layer 34. That is, if the metal element Em can exist at the interface between the first layer 32 and the second layer 34, the metal element Em can be added when forming the first layer 32. , or the metal element Em can be added during the second layer 34. Further, the metal element Em can be added when forming both the first layer 32 and the second layer 34.
  • the first layer 32 of the protective film 3 of this embodiment can be disposed on the multilayer reflective film 2 and in contact with the multilayer reflective film 2 .
  • the first layer 32 is a thin film that is part of the protective film 3 for protecting the multilayer reflective film 2 from oxidation.
  • the material for the first layer 32 is not particularly limited as long as it can protect the multilayer reflective film 2 from oxidation.
  • Materials for the first layer 32 include materials containing silicon (Si) (for example, Si, SiN, SiO, SiON, and SiC), and materials containing boron (B) and carbon (C) (for example, B 4 C). Examples include.
  • the first layer 32 is, for example, a thin film formed under conditions of only silicon (Si), a thin film formed under conditions of only SiN, or a thin film formed under conditions of only B 4 C. It can be a thin film. Note that when the uppermost layer of the multilayer reflective film 2 is a high refractive index layer, the uppermost high refractive index layer can also serve as the first layer 32 of the protective film 3.
  • a thin film formed under conditions such that it consists only of silicon (Si) "a thin film formed under conditions such that it consists only of SiN", or “a thin film formed under conditions consisting only of B 4 C”
  • the first layer 32 which is a "thin film formed under conditions consisting only of silicon (Si)"
  • silicon (Si) diffused from other layers after the first layer 32 is formed. ) will contain elements other than .
  • a thin film formed under conditions in which the elements of other thin films diffuse into the first layer 32 from the thin film in the vicinity of the first layer 32, and is made of only a predetermined element is generally contains elements other than the predetermined elements. Therefore, a thin film formed under conditions in which it consists only of silicon (Si) can be a thin film containing Si.
  • a thin film formed under conditions such that it consists only of SiN can be a thin film containing SiN.
  • a thin film formed under conditions such that it consists only of B 4 C can be a thin film containing B 4 C.
  • the first layer 32 of the protective film 3 of this embodiment can be formed by various known methods, such as ion beam sputtering, sputtering, reactive sputtering, vapor deposition (CVD), and vacuum evaporation. It is.
  • the first layer 32 is a thin film formed under conditions such that it is made only of silicon (Si), only silicon (Si) is formed when forming the first layer 32. It is possible to form a film under certain conditions.
  • the first layer 32 can be formed by ion beam sputtering using a Si target.
  • the first layer 32 is a thin film formed only of SiN
  • the first layer 32 may be formed using a Si target in a nitrogen gas atmosphere, for example. This can be performed by magnetron sputtering method (reactive sputtering method).
  • the first layer 32 is a thin film formed under conditions such that it consists only of B 4 C, for example, the first layer 32 may be formed using a target containing B and C in a predetermined composition. It can be performed by using an ion beam sputtering method.
  • the first layer 32 can be a thin film formed under conditions that include the additive element Ea.
  • the first layer 32 can be a thin film containing Si, SiC and/or B 4 C and an additive element Ea.
  • the first layer 32 can include an additive element Ea.
  • the first layer 32 can further include at least one selected from nitrogen (N) and oxygen (O) in a thin film containing Si, SiC and/or B 4 C, and the additive element Ea.
  • the first layer 32 preferably contains nitrogen (N) and/or oxygen (O) near the interface with the second layer 34.
  • nitrogen (N) and/or oxygen (O) in the first layer 32 are high, elements in the first layer 32 (e.g., silicon (Si)) diffuse into the second layer 34. can be restrained from doing so. As a result, it is possible to suppress a decrease in the reflectance of the second layer 34 due to diffusion of the elements of the first layer 32.
  • the film formation of the first layer 32 or the second layer 34 is performed using nitrogen gas and/or This can be performed by a DC magnetron sputtering method (reactive sputtering method) in an oxygen gas atmosphere.
  • a decrease in the reflectance of the second layer 34 due to diffusion of the elements of the first layer 32 can be suppressed.
  • oxygen (O) it is preferable to introduce oxygen (O) to increase the concentration of nitrogen (N) and/or the concentration of oxygen (O) at the interface between the first layer 32 and the second layer 34.
  • concentration of nitrogen (N) and/or the concentration of oxygen (O) at the interface between the first layer 32 and the second layer 34 becomes too high, the reflectance will decrease and the adhesion will deteriorate. , it is necessary to have a predetermined concentration. This point will be discussed later.
  • the second layer 34 of the protective film 3 of this embodiment is disposed on and in contact with the first layer 32 .
  • the second layer 34 can be a thin film that functions as the protective film 3 by increasing the resistance of the protective film 3 to etching gas and to cleaning.
  • the second layer 34 contains the above-mentioned metal element Em.
  • the second layer 34 can be a thin film formed under conditions that include the metal element Em.
  • the content of the metal element Em in the second layer 34 is greater than the content of the metal element Em in the first layer 32. This is because the second layer 34 needs to be a thin film with high etching resistance.
  • the metal element Em contained in the second layer 34 is preferably one or more elements selected from ruthenium (Ru), rhodium (Rh), and iridium (Ir). By using these elements, it is possible to obtain the second layer 34 having high etching resistance while maintaining high reflectance.
  • the second layer 34 can be a thin film formed under conditions that include the additive element Ea.
  • the second layer 34 can include an additive element Ea. Since the second layer 34 contains the additive element Ea, the additive element Ea can be present at the interface between the first layer 32 and the second layer 34. As a result, the adhesion between the first layer 32 and the second layer 34 can be improved.
  • the second layer 34 can be a thin film formed under conditions that include the metal element Em and the additive element Ea.
  • the second layer 34 can include both the metal element Em and the additive element Ea. Since the second layer 34 contains the metal element Em, it is possible to obtain the second layer 34 having high etching resistance. Furthermore, by including the additive element Ea in the second layer 34, it is possible to more reliably improve the adhesion between the first layer 32 and the second layer 34.
  • a thin film formed under conditions that include the metal element Em or "a thin film formed under conditions that include an additive element Ea” refers to the first layer. 32, it means a thin film formed under conditions for forming a thin film containing the metal element Em, or a thin film formed under conditions for forming a thin film containing the additive element Ea.
  • elements other than those forming the second layer 34 may diffuse from the first layer 32 to the second layer 34 .
  • a thin film formed under conditions that include the metal element Em may contain an element (for example, silicon) that diffuses from the first layer 32 to the second layer 34 after the first layer 32 is formed. (Si)).
  • a thin film formed under conditions that contains a predetermined element by diffusing elements from other thin films from the thin film near the second layer 34 to the second layer 34 generally , contains elements other than the predetermined elements.
  • the content of the metal element Em in the second layer 34 is preferably 40 to 95 atomic %, more preferably 50 to 90 atomic %.
  • the content of the additive element Ea in the second layer 34 is preferably 1 to 10 atomic %, more preferably 2 to 8 atomic %.
  • the second layer 34 can further include at least one selected from nitrogen (N) and oxygen (O).
  • the second layer 34 can be a thin film formed under conditions that include the metal element Em, the additive element Ea, and at least one selected from nitrogen (N) and oxygen (O).
  • the second layer 34 can be a thin film formed under conditions such that it contains only at least one selected from the metal element Em, the additive element Ea, nitrogen (N), and oxygen (O).
  • the content of nitrogen (N) and/or oxygen (O) in the second layer 34 is preferably low.
  • elements in the first layer 32 for example, silicon (Si)
  • the effective film of the second layer 34 that functions as the protective film 3 is reduced. It is possible to suppress the thickness from becoming thinner.
  • the second layer 34 contains nitrogen (N) and/or oxygen (O) near the interface with the first layer 32.
  • the second layer 34 of the protective film 3 of this embodiment can be formed by various known methods, such as ion beam sputtering, sputtering, reactive sputtering, vapor deposition (CVD), and vacuum evaporation. It is.
  • the second layer 34 of the protective film 3 of this embodiment is preferably formed by magnetron sputtering (reactive sputtering) in a nitrogen gas atmosphere.
  • the target for example, a single metal target or an alloy target of the metal component (metal element, for example, metal element Em and/or additive element Ea) contained in the second layer 34 can be used.
  • the second layer 34 is formed by a reactive sputtering method, the second layer 34 can be continuously formed in a nitrogen gas atmosphere after the first layer 32 is formed.
  • the formation of the second layer 34 is , for example, a DC magnetron sputtering method (reactive sputtering method) in a nitrogen (N) gas and/or oxygen (O) gas atmosphere using an alloy target of at least one metal element Em and at least one additional element Ea. This can be done by
  • the second layer 34 having a predetermined composition distribution is formed by changing the film forming conditions such as the flow rate (pressure) of nitrogen gas and/or the applied power. Can be done. However, when appropriate film formation conditions are selected, even if the film formation conditions are kept constant, the second layer 34 with a predetermined composition distribution may be caused by the diffusion of elements within the second layer 34. can be formed into a film. For example, when obtaining the second layer 34 containing silicon (Si), even if the second layer 34 is formed under conditions that do not contain silicon (Si), after the film formation, By diffusing silicon (Si) from the first layer 32, a second layer 34 containing silicon (Si) can be obtained.
  • the second layer 34 is formed continuously after the first layer 32 is formed, without being taken out of the film forming apparatus into the atmosphere. If the first layer 32 is taken out into the atmosphere from the film forming apparatus after being formed, the surface of the first layer 32 may be excessively oxidized or contaminated with unexpected elements. be. In addition, when the surface of the first layer 32 is covered with a nitride film, the adhesion between the first layer 32 and the second layer 34 is better and the reflectance is higher than when covered with an oxide film. There is a tendency to Therefore, it is better to cover the surface of the first layer 32 with a nitride film rather than with an oxide film.
  • the first layer 32 and the second layer 34 are deposited in the atmosphere from a deposition apparatus. It is preferable to carry out the process continuously without taking it out at any time.
  • the protective film 3 of this embodiment includes a first layer 32 and a second layer 34.
  • a first layer 32 is formed on the multilayer reflective film 2 and a second layer 34 is formed on the first layer 32.
  • the second layer 34 can be formed in contact with the first layer 32.
  • the elements contained in the first layer 32 typically diffuse into the second layer 34. Additionally, the elements contained in the second layer 34 typically diffuse into the first layer 32. In this way, the elements contained in the first layer 32 and the second layer 34 typically interdiffuse.
  • the present inventors found that the elements (components) of the first layer 32 and the second layer 34 interdiffused. It has been found that the predetermined content distribution of the components contained in the protective film 3 with respect to the position x in the film thickness direction is related to the adhesion between the first layer 32 and the second layer 34, and the present invention reached.
  • the predetermined content distribution of the components in the protective film 3 of this embodiment is defined as the distribution in the thickness direction (depth direction) of the protective film 3 with the film thickness direction (depth direction) of the protective film 3 as the x axis. direction) is the position x, the position x where the component is dominant in the second layer 34 and the component is dominant in the first layer 32 is the inflection point x1 , and the content of the metal element Em is M.
  • the distribution is such that the ratio A/M at the inflection point x1 is 0.020 or more, where A is the content of the additive element Ea.
  • the x-axis which is the film thickness direction (depth direction) of the protective film 3, is directed from the surface of the protective film 3 on which the absorber film is formed toward the interface between the protective film 3 and the multilayer reflective film.
  • the direction can be the direction in which the value of x increases.
  • the content distribution of the components contained in the protective film 3 (the first layer 32 and the second layer 34) with respect to the position x in the film thickness direction of the protective film 3 of this embodiment can be determined using, for example, a scanning transmission electron microscope (STEM). It can be measured by energy dispersive X-ray spectroscopy (EDX). Note that the content distribution can also be measured using other analysis methods, such as X-ray photoelectron spectroscopy (XPS). By specifying the components (elements) contained in the first layer 32 and the second layer 34 and measuring the content of each component with respect to the position x in the film thickness direction of the protective film 3, each The content distribution of the components can be obtained.
  • STEM scanning transmission electron microscope
  • EDX energy dispersive X-ray spectroscopy
  • XPS X-ray photoelectron spectroscopy
  • the state of a reflective mask blank having the absorber film 4 on the protective film 3, or the absorber film 4 and the etching mask film 6, or the reflection after patterning the absorber film 4 is measured.
  • the composition of each layer may be determined by measuring the state of the mold mask.
  • y(x) may be simply referred to as a "distribution ratio.”
  • y(x) (total content of components in the first layer 32 at position x)/(total content of components in the first layer 32 and second layer 34 at position x)
  • the first layer 32 is a thin film formed under conditions that include silicon (Si), nitrogen (N), and oxygen (O)
  • the second layer 34 is a thin film that contains Ru (metallic element Em)
  • the distribution ratio y(x) is as follows. become. Nitrogen (N) and oxygen (O) are included in both the first layer 32 and the second layer 34, but do not need to be summed twice in the denominator of the equation below.
  • y(x) (total content of Si content, N content and O content at position x)/(Si content, N content, O content, Ru content, Rh content and Total content of Cr content)
  • the first layer 32 is a thin film formed under conditions that include Si, and is not a thin film formed under conditions that include Ru, Rh, and Cr. . Therefore, as a component of the first layer 32, Si is selected, and Ru, Rh, and Cr are not selected.
  • the second layer 34 is a thin film formed under conditions that include Ru, Rh, and Cr, but not a thin film formed under conditions that include Si. Therefore, Ru, Rh, and Cr are selected as the components of the second layer 34, and Si is not selected.
  • nitrogen (N) and oxygen (O), which are gases at room temperature, may be contained in the first layer 32 and the second layer 34.
  • the components of the first layer 32 may include nitrogen (N) and/or oxygen ( O). Further, the distribution ratio y(x) can be determined not only by the film forming conditions but also by taking into account the content distribution as a result of measurement.
  • the analysis sample is analyzed using a focused ion beam (FIB) or the like. It is necessary to process it into a rectangle. At this time, a conductive protective film made of carbon (C) and/or platinum (Pt) is formed to prevent the sample surface from being damaged by the ion beam.
  • carbon (C) may re-deposit on the cross-section of the processed sample and be included in the quantitative value as part of the constituent components of the analysis sample. It can be excluded from the components of the first layer 32 and the second layer 34 to obtain y(x).
  • the components of the first layer 32 As, carbon (C) can be included.
  • an inflection point x1 which is a position x where the component of the second layer 34 is dominant to the component of the first layer 32.
  • the inflection point x1 can be an inflection point when the distribution ratio y(x) of a predetermined component is curve-fitted with a predetermined function.
  • the inflection point x 1 can be considered to be the position of the interface between the first layer 32 and the second layer 34 .
  • the elements (components) of the first layer 32 and the second layer 34 normally diffuse into each other, it is difficult to specify the interface between the first layer 32 and the second layer 34. It is.
  • the interface between the first layer 32 and the second layer 34 can be specified.
  • the position of the inflection point x1 may be referred to as the interface between the first layer 32 and the second layer 34.
  • the inflection point x1 can be found as follows.
  • the range of x for curve fitting the distribution ratio y(x) of a predetermined component to the position x in the film thickness direction of the protective film 3 using a predetermined function is determined.
  • the range of x for curve fitting the distribution ratio y(x) can be determined as follows. Note that, below, a function subjected to curve fitting will also be expressed as a distribution ratio y(x).
  • a sigmoid-type function can be used as a function for curve fitting the distribution ratio y(x).
  • a sigmoid-type function is generally used to approximate a sigmoid-shaped profile.
  • the sigmoid function a higher-order function of cubic function or higher, an error function, an exponential function, a sine function, or the like can be used.
  • a quartic function shown in equation (1) can be used as a function for curve fitting the distribution ratio y(x), for example, a quartic function shown in equation (1) can be used.
  • a, b, c, d and e are constants.
  • y(x) ax4 + bx3 + cx2 +dx+e...(1)
  • the range of x (starting point and ending point of x) for curve fitting the distribution ratio y(x) using a predetermined function is determined.
  • the total content (atomic %) of Em elements and Ea elements decreases from the maximum value, and is 5 atomic % or more and 20 atomic %.
  • the position (depth) where the coefficient of determination R2 of curve fitting by a predetermined function becomes the maximum value in the range of x can be set.
  • a predetermined function obtained by curve fitting the distribution ratio y(x) is second-order differentiated to obtain a second-order derivative y''(x).
  • the distribution ratio y(x) is curve fitted with a cubic function, and the linear function of the second derivative obtained by second-order differentiation of the cubic function is 4, which is closer to the value of x of the solution where the linear function is zero.
  • the inflection point x1 obtained as described above indicates the position x (depth in the film thickness direction of the protective film 3) at which the component dominance of the second layer 34 switches to the component dominance of the first layer 32. become.
  • the ratio A/M at the inflection point x1 is 0.020 or more, preferably 0.022 or more.
  • the protective film 3 includes a plurality of metal elements Em
  • the content M of the metal elements Em is the total content (atomic %) of the plurality of metal elements Em.
  • the protective film 3 includes a plurality of additive elements Ea
  • the content A of the additive elements Ea is the total content (atomic %) of the plurality of additive elements Ea.
  • the protective film 3 of this embodiment in which the ratio A/M at point x1 is 0.020 or more may be referred to as a first aspect of the protective film 3 of this embodiment.
  • the inflection point x 1 corresponds to the interface between the first layer 32 and the second layer 34 . Since the ratio A/M at the inflection point This means that the additional element Ea exists in an amount greater than or equal to the amount of the additive element Ea. Since the protective film 3 of this embodiment has such a content distribution of the metal element Em and the additive element Ea, it is possible to improve the adhesion between the first layer 32 and the second layer 34. can.
  • the ratio A/M at the inflection point x1 is preferably less than 0.17, more preferably 0.16 or less, and 0.12. It is more preferable that it is the following.
  • the upper limit of the ratio A/M it is possible to suppress an adverse effect on the reflectance of the multilayer reflective film-coated substrate 90 due to the content A of the additive element Ea being too large. can.
  • the value at x 1 of the first derivative y'(x) of y(x) means the slope of y(x) at position x 1 .
  • the slope (y'(x 1 )) of y(x) at position x 1 can be expressed by the following equation (4).
  • y'(x 1 ) 4ax 1 3 +3bx 1 2 +2cx 1 +d...(4)
  • the slope y'(x 1 ) is, the steeper the composition change at the interface between the first layer 32 and the second layer 34 is. This means that the degree of diffusion of components (elements) is small.
  • the slope y'(x 1 ) of the distribution ratio y(x) is large.
  • the content A of the additive element Ea at the inflection point x1 is preferably 1 atomic % or more and 15 atomic % or less, and 1.5 atomic %. More preferably, the content is 10 atomic % or less.
  • the content M of the metal element Em at the inflection point x1 is preferably 5 atomic % or more and 80 atomic % or less, and 10 atomic % or more and 75 atomic % or more. More preferably, it is at most atomic %.
  • the first layer 32 includes silicon (Si) and at least one selected from nitrogen (N) and oxygen (O), and The total content of nitrogen (N) and oxygen (O) at point x 1 is preferably 2 atomic % or more, more preferably 4 atomic % or more.
  • the content of nitrogen (N) and oxygen (O) is equal to or higher than a predetermined amount, so that the first layer 32 Adverse effects caused by diffusion of component elements (for example, Si) into the second layer 34 can be suppressed.
  • the total content of nitrogen (N) and oxygen (O) at the inflection point x 1 of the protective film 3 of the substrate 90 with a multilayer reflective film of this embodiment is 35 atomic % or less, and 30 atomic %. It is more preferable that it is below. If the content of nitrogen (N) and/or oxygen (O) at the interface between the first layer 32 and the second layer 34 is too large, the content at the interface between the first layer 32 and the second layer 34 may be too high. Film peeling may occur. Therefore, it is preferable that the total content of nitrogen (N) and oxygen (O) at the inflection point x1 is equal to or less than a predetermined amount.
  • the thickness of the first layer 32 is preferably 1.0 to 2.0 nm, more preferably 1.2 to 1.5 nm. Further, the thickness of the second layer 34 is preferably 1.5 to 5.0 nm, more preferably 2.0 to 4.0 nm.
  • the film thickness of the first layer 32 and the second layer 34 described above is the film thickness when it is assumed that the interface between the first layer 32 and the second layer 34 is located at the above-mentioned inflection point x1 . It is thick.
  • the total thickness of the protective film 3 including the first layer 32 and the second layer 34 (sometimes simply referred to as "thickness of the protective film 3") is the function of the protective film 3. There is no particular restriction as long as it can fulfill the following requirements. From the viewpoint of reflectance of EUV light, the thickness of the protective film 3 is preferably from 1.0 nm to 8.0 nm, more preferably from 1.5 nm to 6.0 nm.
  • the content of the components (metal element Em, additive element Ea, etc.) contained in the first layer 32 and the second layer 34 described above changes continuously in the film thickness direction (depth direction) of each layer.
  • the content can be such that there is a compositional gradient.
  • heat treatment can be performed after forming the protective film 3 or after forming the absorber film 4 to obtain the reflective mask blank 100.
  • heating can be performed at a temperature higher than the pre-baking temperature (about 110° C.) of the resist film 11 in the manufacturing process of the reflective mask blank 100.
  • the temperature conditions for the heat treatment are usually 130°C or more and 300°C or less, preferably 150°C or more and 250°C or less.
  • the protective film 3 of this embodiment can further include layers other than the first layer 32 and second layer 34 described above, if necessary.
  • the second layer 34 having a composition more preferable for promoting the diffusion of nitrogen contained in the second layer 34 and suppressing the diffusion of Si into the second layer 34 is obtained. There are cases where it is possible.
  • the protective film 3 of the second aspect of the present embodiment includes a first layer 32 and a second layer 34 similarly to the first aspect described above.
  • the protective film 3 of the second embodiment has an inflection point x 1 , which is the position x where the component of the second layer 34 is dominant to the component of the first layer 32, as in the above embodiment.
  • the ratio A/M at the inflection point x 1 and the inflection point The specific relationship is the total content (atomic %) of nitrogen (N) and oxygen (O) in x 1 .
  • the protective film 3 of the second aspect of this embodiment contains nitrogen (N) and/or oxygen (O).
  • FIG. 6 shows the total content (atomic %) of nitrogen (N) and oxygen (O) at the inflection point x 1 (X axis) and the metal element Em of the second aspect of the protective film 3 of this embodiment.
  • FIG. 3 is a diagram for explaining the relationship between the content M of the additive element Ea and the content A of the additive element Ea, the ratio A/M (Y axis).
  • the shaded area between the straight line of equation (2-1) and the straight line of equation (2-2) in Figure 6 is and Y area. Note that, for reference, the X and Y values of Examples 1 to 10, which will be described later, are plotted in FIG.
  • Y which is the ratio A/M, is greater than or equal to zero (Y ⁇ 0). This is because the content M of the metal element Em and the content A of the additional element Ea never take negative values.
  • the Fermi level is relatively large for the additive element Ea, becomes smaller in the order of the metal element Em and silicon nitride, and is the smallest for silicon oxide. Therefore, the Fermi level of the material containing nitrogen (N) and/or oxygen (O) is relatively small compared to the Fermi level of the additive element Ea and the metal element Em.
  • the Fermi level is relatively large for the additive element Ea, becomes smaller in the order of the metal element Em and silicon nitride, and is the smallest for silicon oxide. Therefore, the Fermi level of the material containing nitrogen (N) and/or oxygen (O) is relatively small compared to the Fermi level of the additive element Ea and the metal element Em.
  • the protective film 3 of the second aspect of the present embodiment satisfies the above formulas (2-1) and (2-2), so that the protective film 3 at the interface between the first layer 32 and the second layer 34 is Diffusion of components (elements) into each other's layers is less likely to occur, and desired adhesion can be obtained at the interface between the first layer 32 and the second layer 34.
  • the multilayer reflective film coated substrate 90 including the protective film 3 of the second aspect of the present embodiment can have the following configuration.
  • the multilayer reflective film coated substrate 90 including the protective film 3 of the second aspect of the present embodiment includes: A substrate with a multilayer reflective film, comprising a substrate, a multilayer reflective film provided on the substrate, and a protective film provided on the multilayer reflective film,
  • the protective film includes a first layer and a second layer, the first layer is disposed between the second layer and the multilayer reflective film,
  • the protective film includes at least one metal element Em and at least one additional element Ea, and the content of the metal element Em in the second layer is lower than the content of the metal element Em in the first layer.
  • the metal element Em is an element having a Fermi level of ⁇ 4.7 eV or less
  • the additional element Ea is an element having a Fermi level of more than ⁇ 4.7 eV
  • the protective film further includes at least one selected from nitrogen (N) and oxygen (O), In the content distribution of the components contained in the protective film with respect to the position x in the film thickness direction of the protective film, the position x at which the component of the second layer switches to the dominant component of the first layer is defined as an inflection point x.
  • the content of the metal element Em is M
  • the content of the additional element Ea is A
  • the ratio A/M is Y
  • X Y
  • Y which is the ratio A/M at the inflection point x1
  • X are, Y ⁇ -0.0233X+0.14...(2-1) and Y ⁇ 0.0096X-0.144 (2-2)
  • This is a substrate with a multilayer reflective film characterized by the following relationship.
  • the protective film 3 of the third aspect of the present embodiment includes a first layer 32 and a second layer 34 similarly to the first aspect and the second aspect described above.
  • the protective film 3 of the third embodiment has an inflection point x 1 , which is the position x where the component of the second layer 34 is dominant to the component of the first layer 32, as in the above-described embodiments.
  • the protective film 3 of the third embodiment has a distribution ratio y(x 1 ) at the inflection point x 1 (total content of the components of the first layer 32 at the inflection point x 1 / at the inflection point x 1
  • the total content of the components of the first layer 32 and the second layer 34) and the slope y'(x 1 ) of the distribution ratio y(x 1 ) at the inflection point x 1 have a specific relationship. .
  • FIG . 7 shows the distribution ratio y(x 1 ) (X axis) at the inflection point x 1 and the distribution ratio y(x 1 ) at the inflection point x 1 of the third aspect of the protective film 3 of this embodiment.
  • FIG. 2 is a diagram for explaining the relationship between the slope y'(x 1 ) (Y axis).
  • the region to the left of the straight line of equation (3) in FIG. 7 is the region of X and Y that satisfies the relationship of equation (3).
  • the values of X and Y of Examples 1 to 10 described later are plotted for reference, and Examples 1 to 5, 7, 9, and 10 satisfy the condition of formula (3). ing.
  • the protective film 3 of the third embodiment includes a first layer 32 and a second layer 34, but under such an exposure environment, the closer the compositions of the first layer 32 and the second layer 34 are ( (hereinafter referred to as "high homogeneity"), a phenomenon in which hydrogen permeates from the second layer 34 to the first layer 32 is likely to occur.
  • the homogeneity of the first layer 32 and the second layer 34 depends on the distribution ratio y(x 1 ) at the inflection point x 1 , and the larger the distribution ratio y(x 1 ), the more the homogeneity becomes This makes it easier for hydrogen to permeate to the first layer 32.
  • the rate of change in the distribution ratio at the inflection point x 1 that is, the slope y'(x 1 )
  • the properties of the first layer 32 and the second layer 34 become clearly separated.
  • the decreasing tendency of EUV reflectance due to long-term exposure shows a negative correlation with the distribution ratio y(x 1 ) and a positive correlation with y'(x 1 ). That is, as y(x 1 ) increases, the EUV reflectance tends to decrease more easily, and as y'(x 1 ) increases, the EUV reflectance tends to decrease less easily.
  • the present inventors found that it is necessary to satisfy the above equation (3) in order to control the decrease in EUV reflectance due to long-term exposure to a desired level or less. I discovered something.
  • the protective film 3 of the third aspect of the present embodiment makes it difficult for hydrogen to permeate from the second layer 34 to the first layer 32, so that the protective film 3 can be used for a long period of time. Decrease in EUV reflectance due to exposure can be made less likely to occur.
  • the multilayer reflective film-coated substrate 90 including the protective film 3 of the third aspect of the present embodiment can have the following configuration.
  • the multilayer reflective film coated substrate 90 including the protective film 3 of the third aspect of the present embodiment is A substrate with a multilayer reflective film, comprising a substrate, a multilayer reflective film provided on the substrate, and a protective film provided on the multilayer reflective film,
  • the protective film includes a first layer and a second layer, the first layer is disposed between the second layer and the multilayer reflective film,
  • the protective film includes at least one metal element Em and at least one additional element Ea, and the content of the metal element Em in the second layer is lower than the content of the metal element Em in the first layer.
  • the metal element Em is an element having a Fermi level of ⁇ 4.7 eV or less
  • the additional element Ea is an element having a Fermi level of more than ⁇ 4.7 eV
  • the position x at which the component of the second layer switches to the dominant component of the first layer is defined as an inflection point x.
  • the multilayer reflective film-coated substrate 90 of this embodiment can have a back conductive film 5 for electrostatic chuck.
  • the back conductive film 5 is on the second main surface (back main surface) of the substrate 1 (on the side opposite to the surface on which the multilayer reflective film 2 is formed), and an intermediate layer such as a hydrogen intrusion suppressing film is formed on the substrate 1. (in some cases, on top of the intermediate layer).
  • the sheet resistance required for the back conductive film 5 is usually 100 ⁇ /square or less.
  • the method for forming the back conductive film 5 is, for example, a magnetron sputtering method or an ion beam sputtering method using a target of metal such as chromium or tantalum, or an alloy thereof.
  • the material containing chromium (Cr) of the back conductive film 5 is preferably a Cr compound containing at least one selected from boron, nitrogen, oxygen, and carbon in Cr. Examples of the Cr compound include CrN, CrON, CrCN, CrCON, CrBN, CrBON, CrBCN, and CrBOCN.
  • the material containing tantalum (Ta) for the back conductive film 5 may be Ta (tantalum), an alloy containing Ta, or a Ta compound containing at least one of boron, nitrogen, oxygen, and carbon in any of these.
  • TA compounds include, for example, TAB, TAN, TAO, TAON, TACON, TABO, TABO, TABON, TABON, TABON, TAHFON, TAHFON, TAHFON, TAHFON, TAHFCON, TAHFCON, T some To mention TASION, TASICON, etc. can.
  • the thickness of the back conductive film 5 is not particularly limited as long as it satisfies its function as an electrostatic chuck, but is usually from 10 nm to 200 nm. Further, this back conductive film 5 also serves to adjust the stress on the second main surface side of the mask blank 100. That is, the back conductive film 5 is adjusted to balance stress from various films formed on the first main surface side so that a flat reflective mask blank 100 can be obtained.
  • the multilayer reflective film-coated substrate 90 does not necessarily need to include the back conductive film 5.
  • the back conductive film 5 can be formed on the reflective mask blank 100.
  • the reflective mask blank 100 of this embodiment will be explained. As shown in FIG. 2, the reflective mask blank 100 of this embodiment has an absorber film 4 on the protective film 3 of the multilayer reflective film-coated substrate 90 described above.
  • the absorber film 4 of the reflective mask blank 100 of this embodiment is formed on the protective film 3.
  • the basic function of the absorber film 4 is to absorb EUV light.
  • the absorber film 4 may be an absorber film 4 aimed at absorbing EUV light, or may be an absorber film 4 having a phase shift function that takes into account the phase difference of EUV light.
  • the absorber film 4 having a phase shift function absorbs EUV light and reflects a portion of the EUV light to shift the phase. That is, in the reflective mask 200 patterned with the absorber film 4 having a phase shift function, the portion where the absorber film 4 is formed absorbs and attenuates EUV light at a level that does not adversely affect pattern transfer. to reflect some of the light.
  • the EUV light is reflected from the multilayer reflective film 2 via the protective film 3. Therefore, there is a desired phase difference between the reflected light from the absorber film 4 having a phase shift function and the reflected light from the field section.
  • the absorber film 4 having a phase shift function is formed so that the phase difference between the light reflected from the absorber film 4 and the light reflected from the multilayer reflective film 2 is from 170 degrees to 260 degrees.
  • the image contrast of the projected optical image is improved by the interference of the light beams with reversed phase differences at the pattern edge portion. As the image contrast improves, the resolution increases, and various latitudes regarding exposure such as exposure latitude and focus latitude can be increased.
  • the absorber film 4 may be a single layer film or a multilayer film consisting of a plurality of films (for example, a lower absorber film (buffer layer) and an upper absorber film).
  • a single layer film the number of steps during mask blank manufacturing can be reduced and production efficiency is increased.
  • the optical constants and film thickness of the upper absorber film can be appropriately set so that it serves as an antireflection film during mask pattern defect inspection using light. This improves the inspection sensitivity when inspecting mask pattern defects using light.
  • O oxygen
  • N nitrogen
  • the absorber film 4 By making the absorber film 4 a multilayer film, it becomes possible to add various functions.
  • the absorber film 4 has a phase shift function, the range of adjustment on the optical surface can be increased by making it a multilayer film, making it easy to obtain the desired reflectance. Become.
  • the material of the absorber film 4 has a function of absorbing EUV light and can be processed by etching or the like (preferably can be etched by dry etching using chlorine (Cl)-based gas and/or fluorine (F)-based gas).
  • the material is not particularly limited as long as the material has a high etching selectivity with respect to the protective film 3 (second layer 34).
  • Palladium (Pd), silver (Ag), platinum (Pt), gold (Au), iridium (Ir), tungsten (W), chromium (Cr), cobalt (Co), and manganese have such functions.
  • Mn tin
  • Sn tantalum
  • Ta vanadium
  • V nickel
  • Hf hafnium
  • Fe iron
  • Cu tellurium
  • Zn magnesium
  • Mg germanium
  • Al aluminum
  • Rh rhodium
  • Ru ruthenium
  • Mo molybdenum
  • Nb niobium
  • Ti titanium
  • Zr zirconium
  • Y yttrium
  • At least one metal selected from silicon (Si), an alloy containing two or more metals, or a compound thereof can be preferably used.
  • the compound may include oxygen (O), nitrogen (N), carbon (C) and/or boron (B) in the metal or alloy.
  • the absorber film 4 can be formed by a magnetron sputtering method such as a DC sputtering method or an RF sputtering method.
  • the absorber film 4 made of a tantalum compound or the like can be formed by a reactive sputtering method using a target containing tantalum and boron, and using argon gas added with oxygen or nitrogen.
  • the crystalline state of the absorber film 4 is preferably an amorphous or microcrystalline structure. If the surface of the absorber film 4 is not smooth and flat, the edge roughness of the absorber pattern 4a may increase and the dimensional accuracy of the pattern may deteriorate.
  • the preferable surface roughness of the absorber film 4 is root mean square roughness (Rms) of 0.5 nm or less, more preferably 0.4 nm or less, still more preferably 0.3 nm or less.
  • the reflective mask blank 100 of this embodiment can have an etching mask film 6 on the absorber film 4.
  • the material for the etching mask film 6 it is preferable to use a material that has a high etching selectivity ratio of the absorber film 4 to the etching mask film 6 (etching rate of the absorber film 4/etching rate of the etching mask film 6).
  • the etching selectivity ratio of the absorber film 4 to the etching mask film 6 is preferably 1.5 or more, and more preferably 3 or more.
  • the reflective mask blank 100 of this embodiment preferably has an etching mask film 6 on the absorber film 4.
  • chromium or a chromium compound examples include materials containing Cr and at least one element selected from N, O, C, and H.
  • the etching mask film 6 preferably contains CrN, CrO, CrC, CrON, CrOC, CrCN, or CrOCN, and is a CrO-based film (CrO film, CrON film, CrOC film, or CrOCN film) containing chromium and oxygen. is even more preferable.
  • the material for the etching mask film 6 it is preferable to use tantalum or a tantalum compound.
  • tantalum compounds include materials containing Ta and at least one element selected from N, O, B, and H. More preferably, the etching mask film 6 contains TaN, TaO, TaON, TaBN, TaBO, or TaBON.
  • silicon or a silicon compound As the material for the etching mask film 6, it is preferable to use silicon or a silicon compound.
  • silicon compounds include materials containing Si and at least one element selected from N, O, C, and H, metal silicon (metal silicide) containing metal in silicon and silicon compounds, and metal silicon compounds (metal silicide); silicide compounds), etc.
  • metal silicon compounds include materials containing metal, Si, and at least one element selected from N, O, C, and H.
  • the thickness of the etching mask film 6 is preferably 3 nm or more in order to accurately form a pattern on the absorber film 4. Further, the thickness of the etching mask film 6 is preferably 15 nm or less in order to reduce the thickness of the resist film 11.
  • This embodiment is a reflective mask 200 including an absorber pattern 4a obtained by patterning the absorber film 4 of the above-mentioned reflective mask blank.
  • the reflective mask 200 of this embodiment includes an absorber pattern 4a obtained by patterning the absorber film 4 of the above-described reflective mask blank 100.
  • FIGS. 4(a) to 4(d) are schematic diagrams showing an example of a method for manufacturing the reflective mask 200.
  • the reflective mask 200 of this embodiment can be manufactured using the reflective mask blank 100 of this embodiment described above.
  • An example of a method for manufacturing the reflective mask 200 will be described below.
  • a substrate 1, a multilayer reflective film 2 formed on the substrate 1, a protective film 3 formed on the multilayer reflective film 2, and an absorber film 4 formed on the protective film 3 are separated.
  • a reflective mask blank 100 is prepared.
  • a resist film 11 is formed on the absorber film 4 to obtain a reflective mask blank 100 with the resist film 11 (FIG. 4(a)).
  • a resist pattern 11a is formed by drawing a pattern on the resist film 11 using an electron beam drawing device, and then performing a development and rinsing process (FIG. 4(b)).
  • the absorber film 4 is dry-etched using the resist pattern 11a as a mask. As a result, the portion of the absorber film 4 that is not covered by the resist pattern 11a is etched, and the absorber pattern 4a is formed (FIG. 4(c)).
  • etching gas for the absorber film 4 for example, a fluorine-based gas and/or a chlorine-based gas can be used.
  • fluorine-based gases include CF 4 , CHF 3 , C 2 F 6 , C 3 F 6 , C 4 F 6 , C 4 F 8 , CH 2 F 2 , CH 3 F, C 3 F 8 , SF 6 , and F2 etc. can be used.
  • chlorine-based gas Cl2 , SiCl4 , CHCl3 , CCl4 , BCl3 , etc.
  • a mixed gas containing fluorine-based gas and/or chlorine-based gas and O 2 at a predetermined ratio can be used.
  • These etching gases may further contain an inert gas such as He and/or Ar, if necessary.
  • the resist pattern 11a is removed using a resist stripping solution.
  • the reflective mask 200 of this embodiment can be obtained by performing a wet cleaning process using an acidic or alkaline aqueous solution (FIG. 4(d)).
  • a pattern (etching mask pattern) is formed on the etching mask film 6 using the resist pattern 11a as a mask. After that, a step of forming a pattern on the absorber film 4 using the etching mask pattern as a mask is added.
  • the reflective mask 200 thus obtained has a structure in which a multilayer reflective film 2, a protective film 3, and an absorber pattern 4a are laminated on a substrate 1.
  • the exposed area (reflection area) of the multilayer reflective film 2 covered with the protective film 3 has a function of reflecting EUV light.
  • the region where the multilayer reflective film 2 and the protective film 3 are covered by the absorber pattern 4a has a function of absorbing EUV light.
  • the reflective mask 200 of this embodiment can suppress a decrease in the reflectance of the reflective region with respect to EUV light even when subjected to heat treatment. By using the reflective mask 200 of this embodiment, it is possible to obtain a reflective area that maintains a high reflectance for EUV light, so it is possible to transfer a finer pattern onto an object in EUV lithography.
  • the adhesion of the interface between the first layer 32 and the second layer 34 of the protective film 3 can be improved. Therefore, the occurrence of film peeling defects in the reflective mask 200 of this embodiment can be suppressed. Further, in the reflective mask 200 of this embodiment, the adhesion of the interface between the first layer 32 and the second layer 34 of the protective film 3 is improved, and a high reflectance to EUV light is maintained, and the protective film The high etching resistance of No. 3 can be maintained. Therefore, the reflective mask 200 of this embodiment can be used for manufacturing high-performance semiconductor devices.
  • the method for manufacturing a semiconductor device includes a step of performing a lithography process using an exposure device using the above-described reflective mask 200 to form a transfer pattern on a transfer target.
  • a transfer pattern can be formed on the semiconductor substrate 60 (transfer target) by lithography using the reflective mask 200 of this embodiment.
  • This transfer pattern has a shape in which the pattern of the reflective mask 200 is transferred.
  • a reflective mask made from a substrate 90 with a multilayer reflective film and a reflective mask blank 100 that can suppress a decrease in the reflectance of the multilayer reflective film 2 with respect to EUV light even when subjected to heat treatment. 200 can be used to manufacture a semiconductor device. Therefore, by using the reflective mask 200 of this embodiment, it is possible to increase the density and precision of a semiconductor device.
  • FIG. 5 A method for transferring a pattern onto the resist-coated semiconductor substrate 60 using EUV light will be described using FIG. 5.
  • FIG. 5 shows a schematic configuration of an EUV exposure device 50, which is a device for transferring a transfer pattern to the resist film 11 formed on the semiconductor substrate 60.
  • an EUV light generation section 51 an EUV light generation section 51, an irradiation optical system 56, a reticle stage 58, a projection optical system 57, and a wafer stage 59 are precisely arranged along the optical path axis of EUV light.
  • the container of the EUV exposure apparatus 50 is filled with hydrogen gas.
  • the EUV light generation section 51 includes a laser light source 52, a tin droplet generation section 53, a trapping section 54, and a collector 55.
  • a laser light source 52 When the tin droplets emitted from the tin droplet generation section 53 are irradiated with a high-power carbon dioxide laser from the laser light source 52, the tin in the droplet state becomes plasma and EUV light is generated.
  • the generated EUV light is collected by a collector 55, passes through an irradiation optical system 56, and enters a reflective mask 200 set on a reticle stage 58.
  • the EUV light generation unit 51 generates EUV light with a wavelength of 13.53 nm, for example.
  • the EUV light reflected by the reflective mask 200 is usually reduced to about 1/4 by the projection optical system 57 into pattern image light and projected onto the semiconductor substrate 60 (substrate to be transferred).
  • a given circuit pattern is transferred to the resist film on the semiconductor substrate 60.
  • a resist pattern can be formed on the semiconductor substrate 60 by developing the exposed resist film.
  • an integrated circuit pattern can be formed on the semiconductor substrate 60.
  • a semiconductor device is manufactured through such steps and other necessary steps.
  • a multilayer reflective film-coated substrate 90 in which a multilayer reflective film 2 and a protective film 3 were formed on the first main surface of the substrate 1 was fabricated.
  • Table 1 shows the types of Em and Ea elements contained in the protective film 3 of Examples 1 to 10, the gas flow conditions during film formation of the second layer 34, and the continuity of the film formation process.
  • the continuity of the film forming process refers to whether or not the second layer 34 was continuously formed within the film forming apparatus without being taken out into the atmosphere after forming the first layer 32 .
  • Table 1 shows the composition of targets for forming the second layer 34 of the protective film 3 in Examples 1 to 10.
  • the multilayer reflective film coated substrates 90 of Examples 1 to 10 were produced as follows.
  • a SiO 2 -TiO 2 glass substrate 1 which is a low thermal expansion glass substrate 1 of 6025 size (approximately 152 mm x 152 mm x 6.35 mm) with polished first and second main surfaces, is prepared. It was set to 1. Polishing consisting of a rough polishing process, a precision polishing process, a local polishing process, and a touch polishing process was performed to obtain a flat and smooth main surface.
  • the multilayer reflective film 2 was a periodic multilayer reflective film 2 made of Si and Mo in order to be suitable for EUV light with a wavelength of 13.5 nm.
  • a Si target and a Mo target were used as a target for a high refractive index material and a target for a low refractive index material.
  • krypton (Kr) ion particles from an ion source to these targets and performing ion beam sputtering, Si layers and Mo layers were alternately stacked on the substrate 1.
  • the sputtered particles of Si and Mo were incident at an angle of 30 degrees with respect to the normal to the first main surface of the substrate 1.
  • a Si layer was formed with a thickness of 4.2 nm, and then a Mo layer was formed with a thickness of 2.8 nm. This was defined as one cycle, and 40 cycles were laminated in the same manner. Therefore, the material of the lowest layer of the multilayer reflective film 2, that is, the material of the multilayer reflective film 2 closest to the substrate 1, is Si, and the material of the uppermost layer of the multilayer reflective film 2 is Mo.
  • a protective film 3 consisting of a first layer 32 and a second layer 34 was formed on the multilayer reflective film 2 of Examples 1 to 10.
  • the first layer 32 of the protective film 3 was formed on the surface of the multilayer reflective film 2.
  • the first layer 32 was formed under the same conditions as the method for forming the Si layer of the multilayer reflective film 2 described above. At this time, the first layer 32 was formed so that the film thickness of the first layer 32 was 4.0 nm based on the relationship between the film formation rate and film formation time of the Si layer under predetermined conditions.
  • a second layer 34 was formed on the surface of the first layer 32.
  • Table 1 shows the continuity of the film formation process between the film formation of the first layer 32 and the film formation of the second layer 34.
  • “continuous” indicates that after the first layer 32 was formed, the second layer 34 was continuously formed in the film forming apparatus without taking out the sample into the atmosphere. .
  • the second layer 34 is formed using a sintered target having the composition shown in Table 1, and the flow rate ratio N 2 /Ar of nitrogen (N 2 ) gas and/or argon (Ar) gas shown in Table 1 (flow rate unit sccm: It was formed by a DC magnetron sputtering method (reactive sputtering method) in a gas atmosphere introduced at a standard cubic centimeter per minute.
  • the following distribution ratio y(x) with respect to the position x was determined based on the measured value of the content of each component with respect to the position x in the film thickness direction of the protective film 3.
  • y(x) (total content of components in the first layer 32 at position x)/(total content of components in the first layer 32 and second layer 34 at position x)
  • the distribution ratio y(x) was curve-fitted with a quartic function to obtain a quartic function y(x) corresponding to the distribution ratio y(x).
  • Table 4 shows the composition (atomic %) at the inflection point x 1 (the interface between the first layer 32 and the second layer 34), the total content of the Em element and the Ea element (M+A), and the content of the metal element Em.
  • the ratio (A/M) between the content M and the content A of the additive element Ea is shown.
  • the reflectance of the multilayer reflective film coated substrates 90 of Examples 1 to 10 for EUV light ranged from 62.9% (Example 3) to 64.2% (Example 9). Therefore, it can be said that the reflectances of the multilayer reflective film coated substrates 90 of Examples 1 to 10 for EUV light are all high enough to be used as the reflective mask 200.
  • the first aspect of the protective film 3 is maintained while maintaining a high reflectance to EUV light. It can be said that the adhesion between the layer 32 and the second layer 34 was improved.
  • the Fermi level of a material containing nitrogen (N) and/or oxygen (O) is relatively small compared to the Fermi level of the additive element Ea and the metal element Em. It is thought that the use of a material containing (O) improves the diffusion prevention performance.
  • the protective film 3 of Examples 1 to 3, 5, and 6 contains nitrogen (N) and/or oxygen (O) at the position of the inflection point x 1 (the interface between the first layer 32 and the second layer 34). is considered to improve diffusion prevention performance.
  • the protective film 3 of Example 4 has a detectable content of nitrogen (N) and oxygen (O ), it is considered that the effect of diffusion prevention performance caused by nitrogen (N) and/or oxygen (O) as in Examples 1 to 3, 5, and 6 cannot be obtained.
  • a back conductive film 5 made of a CrN film was formed on the second main surface (back surface) of the substrate 1 of the multilayer reflective film coated substrate 90 by magnetron sputtering (reactive sputtering) under the following conditions.
  • Conditions for forming the back conductive film 5 Cr target, mixed gas atmosphere of Ar and N 2 (Ar: 90%, N: 10%), film thickness 20 nm.
  • a TaBN film with a thickness of 55 nm was formed as an absorber film 4 on the protective film 3 of the multilayer reflective film coated substrate 90.
  • the reflective mask blank 100 of the example was manufactured.
  • Film peeling defects are detected on the surface of the absorber film 4, which is the outermost layer of the reflective mask blank 100, using a reflective mask blank 100 defect inspection device that can detect defects with a height of 4 nm or more and a width of 80 nm or more. It was detected by testing.
  • the detected defects also include general defects that may occur during the manufacturing process of the reflective mask blank 100 due to the film formation process and cleaning process.
  • the presence or absence of film peeling defects was determined by observing the cross section using a scanning transmission electron microscope (STEM). Table 4 shows the results of determining the presence or absence of film peeling defects in the reflective mask blanks 100 of Examples 1 to 10.
  • Reflective mask 200 Next, a reflective mask 200 was manufactured using the reflective mask blanks 100 of Examples 1 to 6 that had no film peeling defects. Manufacturing of the reflective mask 200 will be explained with reference to FIG.
  • a resist film 11 was formed on the absorber film 4 of the reflective mask blank 100. Then, a desired pattern such as a circuit pattern was drawn (exposed) on this resist film 11, and further developed and rinsed to form a predetermined resist pattern 11a (FIG. 4(b)). Next, the absorber pattern 4a was formed by dry etching the absorber film 4 (TaBN film) using Cl 2 gas using the resist pattern 11a as a mask (FIG. 4(c)). Thereafter, the resist pattern 11a was removed (FIG. 4(d)).
  • the reflective masks 200 of Examples 1 to 6 were set in an EUV scanner, and EUV exposure was performed on a wafer in which a film to be processed and a resist film were formed on a semiconductor substrate 60 as a transfer target. Then, by developing this exposed resist film, a resist pattern was formed on the semiconductor substrate 60 on which the film to be processed was formed.
  • the protective film 3 includes a predetermined first layer 32 and a predetermined second layer 34. It is thought that the adhesion was improved. Therefore, by using the reflective masks 200 of Examples 1 to 6, it was possible to form a fine and highly accurate transfer pattern (resist pattern) on the semiconductor substrate 60 (substrate to be transferred).
  • This resist pattern is transferred to the processed film by etching, and various processes such as forming an insulating film, a conductive film, introducing dopants, or annealing are performed to manufacture semiconductor devices with desired characteristics at a high yield. We were able to.
  • Substrate 2 Multilayer reflective film 3 Protective film 4 Absorber film 4a Absorber pattern 5 Back conductive film 6 Etching mask film 11 Resist film 11a Resist pattern 32 First layer 34 Second layer 50 EUV exposure device 51 EUV light generation section 52 Laser light source 53 Tin droplet generation section 54 Trapping section 55 Collector 56 Irradiation optical system 57 Projection optical system 58 Reticle stage 59 Wafer stage 60 Semiconductor substrate 90 Substrate with multilayer reflective film 100 Reflective mask blank 200 Reflective mask

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  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laminated Bodies (AREA)
  • Formation Of Insulating Films (AREA)
PCT/JP2023/023882 2022-06-28 2023-06-27 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 Ceased WO2024005038A1 (ja)

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KR1020247042151A KR20250027661A (ko) 2022-06-28 2023-06-27 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법
JP2024530899A JPWO2024005038A1 (https=) 2022-06-28 2023-06-27
TW112124079A TW202414072A (zh) 2022-06-28 2023-06-28 附多層反射膜之基板、反射型光罩基底、反射型光罩以及半導體裝置之製造方法

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268750A (ja) 2004-02-19 2005-09-29 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
WO2021132111A1 (ja) * 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP2021128247A (ja) * 2020-02-13 2021-09-02 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
WO2021200325A1 (ja) * 2020-03-30 2021-10-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2021157097A (ja) * 2020-03-27 2021-10-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268750A (ja) 2004-02-19 2005-09-29 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
WO2021132111A1 (ja) * 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP2021128247A (ja) * 2020-02-13 2021-09-02 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
JP2021157097A (ja) * 2020-03-27 2021-10-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
WO2021200325A1 (ja) * 2020-03-30 2021-10-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

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