WO2024004614A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2024004614A1
WO2024004614A1 PCT/JP2023/021725 JP2023021725W WO2024004614A1 WO 2024004614 A1 WO2024004614 A1 WO 2024004614A1 JP 2023021725 W JP2023021725 W JP 2023021725W WO 2024004614 A1 WO2024004614 A1 WO 2024004614A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
die pad
main surface
semiconductor element
terminal lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/021725
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English (en)
French (fr)
Japanese (ja)
Inventor
英俊 安部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Publication date
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Priority to JP2024530652A priority Critical patent/JPWO2024004614A1/ja
Publication of WO2024004614A1 publication Critical patent/WO2024004614A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Definitions

  • the present disclosure relates to a semiconductor device.
  • Patent Document 1 semiconductor devices are known in which semiconductor elements such as diodes or transistors are covered with resin packages (for example, Patent Document 1).
  • the semiconductor device described in Patent Document 1 includes a semiconductor element, a lead frame, and a resin package.
  • the lead frame includes a plurality of leads, one of which includes a die bonding pad.
  • a semiconductor element is mounted on a die bonding pad.
  • the resin package covers the semiconductor element and also partially covers each of the plurality of leads. The portion of each lead exposed from the resin package is a terminal of the semiconductor device.
  • Such a semiconductor device is mounted on a circuit board of, for example, an electronic device and used in a power supply circuit.
  • a plurality of semiconductor devices may be used in the power supply circuit, and in this case, the plurality of semiconductor devices are mounted on the aforementioned circuit board.
  • An object of the present disclosure is to provide a semiconductor device that is improved over the conventional semiconductor device.
  • one of the objectives of the present disclosure is to provide a semiconductor device that can reduce the mounting area on a circuit board.
  • a semiconductor device provided by one aspect of the present disclosure includes a first semiconductor element having a first main surface facing one side in the thickness direction and a first main surface electrode disposed on the first main surface; a second semiconductor element having a second main surface facing in the same direction as the first main surface and a second main surface electrode disposed on the second main surface; a first die pad on which the first semiconductor element is mounted; a second die pad arranged on one side of the first die pad in a first direction perpendicular to the thickness direction and on which the second semiconductor element is mounted; and a second die pad spaced apart from the first die pad and the second die pad.
  • the semiconductor device includes a one-terminal lead and a sealing resin that covers the first semiconductor element and the second semiconductor element. The first main surface electrode and the second main surface electrode are electrically connected to the first terminal lead inside the sealing resin.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment.
  • FIG. 2 is a plan view showing the semiconductor device according to the first embodiment.
  • FIG. 3 is a diagram showing the sealing resin with imaginary lines in the plan view of FIG. 2.
  • FIG. 4 is a partially enlarged view of FIG. 3.
  • FIG. 5 is a bottom view showing the semiconductor device according to the first embodiment.
  • FIG. 6 is a front view showing the semiconductor device according to the first embodiment.
  • FIG. 7 is a right side view showing the semiconductor device according to the first embodiment.
  • FIG. 8 is a partially enlarged view of FIG. 7, showing the sealing resin with imaginary lines.
  • FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3.
  • FIG. 10 is a sectional view taken along line XX in FIG.
  • FIG. 11 is a partially enlarged view of FIG. 9 .
  • FIG. 12 is a partially enlarged view of FIG. 9 .
  • FIG. 13 is a partially enlarged view of FIG. 9 .
  • FIG. 14 is a partially enlarged view of FIG. 10.
  • FIG. 15 is a partial enlarged view of a part of FIG. 3.
  • FIG. 16 is a partially enlarged view of FIG. 3.
  • FIG. 17 is a partially enlarged view of FIG. 3.
  • FIG. 18 is a partially enlarged view of FIG. 3.
  • FIG. 19 is a diagram showing an example of the circuit configuration of the semiconductor device according to the first embodiment.
  • FIG. 20 is a plan view showing a semiconductor device according to a first modification of the first embodiment, in which a sealing resin is shown with imaginary lines.
  • FIG. 20 is a plan view showing a semiconductor device according to a first modification of the first embodiment, in which a sealing resin is shown with imaginary lines.
  • FIG. 20 is a plan view showing a semiconductor device according
  • FIG. 21 is a plan view showing a semiconductor device according to a second modification of the first embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 22 is a plan view showing a semiconductor device according to a third modification of the first embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 23 is a plan view showing a semiconductor device according to a fourth modification of the first embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 24 is a plan view showing a semiconductor device according to a fifth modification of the first embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 25 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a fifth modification of the first embodiment.
  • FIG. 26 is a plan view showing a semiconductor device according to a sixth modification of the first embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 27 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a sixth modification of the first embodiment.
  • FIG. 28 is a plan view showing a semiconductor device according to a seventh modification of the first embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 29 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a seventh modification of the first embodiment.
  • FIG. 30 is a plan view showing the semiconductor device according to the second embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 31 is a cross-sectional view taken along the XXXI-XXXI line in FIG. 30.
  • FIG. 32 is a diagram showing an example of the circuit configuration of the semiconductor device according to the second embodiment.
  • FIG. 33 is a plan view showing a semiconductor device according to a first modification of the second embodiment, in which a sealing resin is shown with imaginary lines.
  • FIG. 34 is a sectional view taken along line XXXIV-XXXIV in FIG. 33.
  • FIG. 35 is a plan view showing a semiconductor device according to a second modification of the second embodiment, in which a sealing resin is shown with imaginary lines.
  • FIG. 36 is a cross-sectional view taken along line XXXVI-XXXVI in FIG. 35.
  • FIG. 37 is a plan view showing a semiconductor device according to a third modification of the second embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 33 is a plan view showing a semiconductor device according to a first modification of the second embodiment, in which a sealing resin is shown with imaginary lines.
  • FIG. 34 is a sectional view taken along line XXXIV
  • FIG. 38 is a cross-sectional view taken along the line XXXVIII-XXXVIII in FIG. 37.
  • FIG. 39 is a plan view showing a semiconductor device according to a fourth modification of the second embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 40 is a plan view showing a semiconductor device according to a fifth modification of the second embodiment, in which a sealing resin is shown with imaginary lines.
  • FIG. 41 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a fifth modification of the second embodiment.
  • FIG. 42 is a plan view showing a semiconductor device according to a sixth modification of the second embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 43 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a sixth modification of the second embodiment.
  • FIG. 44 is a plan view showing a semiconductor device according to a seventh modification of the second embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 45 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a seventh modification of the second embodiment.
  • FIG. 46 is a plan view showing the semiconductor device according to the third embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 47 is a plan view showing a semiconductor device according to a modification of the third embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 48 is a plan view showing the semiconductor device according to the fourth embodiment, in which the sealing resin is shown with imaginary lines.
  • FIG. 49 is a plan view showing a semiconductor device according to a modification of the fourth embodiment, in which the sealing resin is shown with imaginary lines.
  • an object A is located on an object B
  • an object A is in contact with an object B, and an object A is located on an object B.
  • an object A overlaps an object B when viewed in a certain direction means, unless otherwise specified, “an object A overlaps all of an object B" and "a certain object A overlaps an object B".
  • a certain thing A (the material of the thing) includes a certain material C” means "a case where the thing A (the material of the thing A) consists of a certain material C" and "the main component of the thing A (the material of the thing)”. "is a certain material C”.
  • the semiconductor device A10 includes a first die pad 10A, a second die pad 10B, a plurality of terminal leads 13, a first semiconductor element 21, a second semiconductor element 22, a first conduction section 31, a pair of first connection members 41A and 41B, and a pair of first connection members 41A and 41B.
  • the plurality of terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 172, a sixth terminal lead 181, and a seventh terminal lead 182. .
  • the thickness direction of the semiconductor device A10 will be referred to as the "thickness direction z.”
  • one side of the thickness direction z may be referred to as upper side, and the other side may be referred to as lower side.
  • descriptions such as “upper”, “lower”, “upper”, “lower”, “upper surface”, and “lower surface” indicate the relative positional relationship of each component etc. in the thickness direction z, and do not necessarily mean It is not a term that defines the relationship with the direction of gravity.
  • “planar view” refers to when viewed in the thickness direction z.
  • a direction perpendicular to the thickness direction z is referred to as a "first direction x.”
  • a direction perpendicular to the thickness direction z and the first direction x is referred to as a "second direction y.”
  • the first die pad 10A and the second die pad 10B are located apart from each other in the first direction x, as shown in FIGS. 3 and 9.
  • the first die pad 10A, along with the second die pad 10B and the plurality of terminal leads 13, are configured from the same lead frame.
  • the lead frame is made of copper (Cu) or a copper alloy. Therefore, the compositions of the first die pad 10A, the second die pad 10B, and the plurality of terminal leads 13 include copper.
  • Each of the first die pad 10A and the second die pad 10B has a rectangular shape in plan view, for example.
  • the first die pad 10A and the second die pad 10B each have a main surface 101 and a back surface 102.
  • the main surface 101 and the back surface 102 described below are common to the first die pad 10A and the second die pad 10B unless otherwise specified.
  • the main surface 101 faces in the thickness direction z (upward).
  • the main surface 101 is covered with a sealing resin 50.
  • a first semiconductor element 21 is mounted on the main surface 101 of the first die pad 10A.
  • the back surface 102 of the first die pad 10A faces the opposite side to the side where the first semiconductor element 21 is located in the thickness direction z.
  • a second semiconductor element 22 is mounted on the main surface 101 of the second die pad 10B.
  • the sealing resin 50 connects the first semiconductor element 21, the second semiconductor element 22, the first conductive part 31, and the first die pad 10A and the second die pad 10B. covering at least a portion of each. Further, the sealing resin 50 partially covers each of the plurality of terminal leads 13.
  • the sealing resin 50 has electrical insulation properties.
  • the sealing resin 50 includes, for example, black epoxy resin. As shown in FIG. 2, a dimension L1 of the sealing resin 50 in the first direction x is longer than a dimension L2 of the sealing resin 50 in the second direction y.
  • the sealing resin 50 has a resin main surface 51, a resin back surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, a plurality of recesses 56, a groove 57, and a plurality of recesses 581, 582.
  • the resin main surface 51 faces the same side as each main surface 101 of the first die pad 10A and the second die pad 10B in the thickness direction z.
  • the resin back surface 52 faces the opposite side from the resin main surface 51 in the thickness direction z.
  • each back surface 102 of the first die pad 10A and the second die pad 10B is exposed from the resin back surface 52.
  • the pair of first side surfaces 53 are located apart from each other in the first direction x.
  • the pair of first side surfaces 53 face in the first direction x and extend in the second direction y.
  • the pair of first side surfaces 53 are connected to the resin main surface 51 and the resin back surface 52.
  • the second side surface 54 and the third side surface 55 are located apart from each other in the second direction y.
  • the second side surface 54 and the third side surface 55 face oppositely to each other in the second direction y and extend in the first direction x.
  • the second side surface 54 and the third side surface 55 are connected to the resin main surface 51 and the resin back surface 52.
  • a plurality of terminal leads 13 are exposed from the third side surface 55.
  • the plurality of recesses 56 are recessed from the third side surface 55 in the second direction y, and extend from the resin main surface 51 to the resin back surface 52 in the thickness direction z. In the first direction They are located individually between the terminal lead 15 and between the second terminal lead 15 and the sixth terminal lead 181.
  • the groove portion 57 is recessed from the resin back surface 52 in the thickness direction z and extends along the second direction y. Both sides of the groove portion 57 in the second direction y are connected to the second side surface 54 and the third side surface 55. When viewed in the thickness direction z, the groove portion 57 separates the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B. Note that the sealing resin 50 does not need to have the groove portion 57.
  • each of the plurality of recesses 581, 582 is recessed from the main resin surface 51 in the thickness direction z.
  • the plan view shape of each of the plurality of recesses 581 and 582 is not particularly limited, in the illustrated example, it is circular.
  • Each of the plurality of recesses 581 overlaps the first die pad 10A in plan view.
  • the plurality of recesses 581 are individually located near the four corners of the first die pad 10A in plan view.
  • Each of the plurality of recesses 582 overlaps the second die pad 10B in plan view.
  • the plurality of recesses 582 are individually located near the four corners of the second die pad 10B in plan view.
  • Each of the plurality of recesses 581 and 582 does not overlap the first conductive portion 31 in plan view. Furthermore, each of the plurality of recesses 581, 582 does not overlap with either the pair of first connecting members 41A, 41B or the pair of second connecting members 42A, 42B in plan view.
  • the plurality of recesses 581 are formed by pins for fixing the first die pad 10A during manufacturing of the semiconductor device A10. The pin is pressed against the first die pad 10A before forming the sealing resin 50, and fixes the first die pad 10A. In this state, formation of the sealing resin 50 is started. Then, the pin is pulled out before the formation of the sealing resin 50 is completed.
  • the sealing resin 50 is formed in at least a portion of the area where the pin was arranged, so that the main surface 101 of the first die pad 10A is covered with the sealing resin 50.
  • the plurality of recesses 581 are marks formed by such a molding process of the sealing resin 50.
  • the plurality of recesses 582 are formed by pins for fixing the second die pad 10B during manufacturing of the semiconductor device A10.
  • the plurality of recesses 582 are marks formed by the molding process of the sealing resin 50.
  • the sealing resin 50 further has a plurality of traces 589, as shown in FIGS. 1, 2, and 5.
  • the plurality of marks 589 are, for example, marks caused by pressing an ejector pin for ejecting the sealing resin 50 from the mold when the sealing resin 50 was formed.
  • Each of the plurality of traces 589 is depressed from either the resin main surface 51 or the resin back surface 52. Note that none of the plurality of traces 589 may be formed on the sealing resin 50.
  • the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B each have a trace 109.
  • the traces 109 formed on the first die pad 10A and the traces 109 formed on the second die pad 10B are traces where the ejector pins described above were pressed.
  • the trace 109 formed on the first die pad 10A is depressed from the back surface 102 of the first die pad 10A, and the trace 109 formed on the second die pad 10B is depressed from the back surface 102 of the second die pad 10B. Note that the trace 109 does not need to be formed on either the first die pad 10A or the second die pad 10B.
  • the depths of the plurality of traces 589 and the plurality of traces 109 are, for example, smaller than the depths of the plurality of recesses 581, but may be larger or the same.
  • the first die pad 10A and the second die pad 10B have a first end surface 111, a second end surface 112, a third end surface 113, and a fourth end surface 114.
  • the first end surface 111, the second end surface 112, the third end surface 113, and the fourth end surface 114 are covered with a sealing resin 50.
  • the first end surface 111 faces in the first direction x and extends in the second direction y.
  • the first end surface 111 is located closest to the pair of first side surfaces 53 of the sealing resin 50.
  • the second end surface 112 faces in the second direction y and extends in the first direction x.
  • the second end surface 112 is located closest to the second side surface 54 of the sealing resin 50.
  • the third end surface 113 faces opposite to the second end surface 112 in the second direction y, and extends in the first direction x.
  • the third end surface 113 is located closest to the third side surface 55 of the sealing resin 50.
  • the fourth end surface 114 faces opposite to the first end surface 111 in the first direction x, and extends in the second direction y.
  • a groove 57 is located between the fourth end surface 114 of the first die pad 10A and the fourth end surface 114 of the second die pad 10B.
  • the distance P2 between the third end surface 113 and the third side surface 55 is longer than the distance P1 between the second end surface 112 and the second side surface 54.
  • the first die pad 10A and the second die pad 10B have a first corner end surface 121.
  • the first corner end surface 121 is located between the first end surface 111 and the second end surface 112, and is located at the corner of either the first die pad 10A or the second die pad 10B.
  • the first corner end surface 121 is a plane that is covered with the sealing resin 50 and is inclined with respect to the first end surface 111 and the second end surface 112. Either the first inclination angle ⁇ 1 of the first corner end face 121 with respect to the first end face 111 shown in FIG. 15 and the second inclination angle ⁇ 2 of the first corner end face 121 with respect to the second end face 112 shown in FIG. ° or less.
  • One of the plurality of recesses 581 is located near the first corner end surface 121 of the first die pad 10A in plan view, and one of the plurality of recesses 582 is located near the second die pad 10B in plan view. It is located near the first corner end face 121 of.
  • the longest normal line Nmax of the first corner end face 121 is set.
  • the longest normal Nmax is the closest from the first corner end surface 121 of either the first die pad 10A or the second die pad 10B to the first corner end surface 121 of the pair of first side surfaces 53 of the sealing resin 50. This is the maximum value of the normal line of the first corner end surface 121 that reaches the first side surface 53 located therein.
  • the longest normal Nmax is 1.0 times or more the length of the intersection line C (see FIG. 15) between the first corner end surface 121 and a virtual plane whose in-plane directions are the first direction x and the second direction y. It is 1.5 times or less.
  • the first die pad 10A and the second die pad 10B have a second corner end surface 122.
  • the second corner end surface 122 is located between the first end surface 111 and the third end surface 113, and is located at the corner of either the first die pad 10A or the second die pad 10B.
  • the second corner end surface 122 is a plane that is covered with the sealing resin 50 and is inclined with respect to the first end surface 111 and the third end surface 113. Either the third inclination angle ⁇ 3 of the second corner end face 122 with respect to the first end face 111 shown in FIG. 16 and the fourth inclination angle ⁇ 4 of the second corner end face 122 with respect to the third end face 113 shown in FIG. ° or less.
  • One of the plurality of recesses 581 is located near the second corner end surface 122 of the first die pad 10A in a plan view, and one of the plurality of recesses 582 is located near the second die pad 10B in a plan view. It is located near the second corner end face 122 of.
  • One of the plurality of recesses 581 is located near the third corner end surface 123 of the first die pad 10A in plan view, and one of the plurality of recesses 582 is located near the second die pad 10B in plan view. It is located near the third corner end face 123 of.
  • One of the plurality of recesses 581 is located near the fourth corner end surface 124 of the first die pad 10A in plan view, and one of the plurality of recesses 582 is located near the second die pad 10B in plan view. It is located near the fourth corner end face 124 of.
  • the second die pad 10B has a seat surface 103 and an upright surface 104.
  • the seat surface 103 faces the same side as the main surface 101 in the thickness direction z, and is located between the main surface 101 and the back surface 102 in the thickness direction z.
  • the seat surface 103 is connected to a fourth end surface 114.
  • the upright surface 104 faces in a direction perpendicular to the thickness direction z, and is connected to the seat surface 103 and the main surface 101.
  • the seat surface 103 and the upright surface 104 form a step difference in the second die pad 10B.
  • Each of the first semiconductor element 21 and the second semiconductor element 22 is, for example, a transistor.
  • the transistor in the semiconductor device A10 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), but may also be a bipolar transistor, an IGBT (Insulated Gate Bipolar Transistor), etc. .
  • parasitic diode components built into each of the first semiconductor element 21 and the second semiconductor element 22 are also illustrated.
  • Each of the first semiconductor element 21 and the second semiconductor element 22 is, for example, an n-channel type, but may be a p-channel type.
  • Each of the first semiconductor element 21 and the second semiconductor element 22 includes a compound semiconductor substrate.
  • the composition of the compound semiconductor substrate includes silicon (Si) or silicon carbide (SiC).
  • the first semiconductor element 21 is mounted on the first die pad 10A, as shown in FIGS. 3 and 9.
  • the center of gravity of the first semiconductor element 21 overlaps with the center of the first die pad 10A.
  • the center of the first die pad 10A is the center when the first die pad 10A is divided into Nx (Nx is a positive odd number) in the first direction x, and the center of the first die pad 10A is divided into Ny (Ny is a positive odd number) This is the area corresponding to the center when divided.
  • Nx and Ny are each 3 or 5, for example, although they are not limited in any way.
  • the first semiconductor element 21 has a first main surface 21a and a first back surface 21b.
  • the first main surface 21a and the first back surface 21b are spaced apart from each other in the thickness direction z.
  • the first main surface 21a faces the same direction as the main surface 101 of the first die pad 10A.
  • the first back surface 21b faces opposite to the first main surface 21a in the thickness direction z, and faces the main surface 101 of the first die pad 10A.
  • the first main surface electrode 211 is arranged on the first main surface 21a. A current corresponding to the power converted by the first semiconductor element 21 flows through the first main surface electrode 211 .
  • the first main surface electrode 211 is, for example, a source electrode.
  • the first main surface electrode 211 includes a plurality of metal plating layers.
  • the first main surface electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer.
  • the first main surface electrode 211 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer. But that's fine.
  • the main surface electrode 212 is arranged on the first main surface 21a.
  • a first drive signal (gate voltage) for driving the first semiconductor element 21 is applied to the main surface electrode 212 .
  • the main surface electrode 212 is, for example, a gate electrode.
  • the area of the main surface electrode 212 is smaller than the area of the first main surface electrode 211.
  • the first back electrode 213 is arranged on the first back surface 21b.
  • the first back electrode 213 is provided facing the main surface 101 of the first die pad 10A.
  • a current corresponding to the power before being converted by the first semiconductor element 21 flows through the first back electrode 213 .
  • the first back electrode 213 is, for example, a drain electrode.
  • the second semiconductor element 22 is mounted on the main surface 101 of the second die pad 10B.
  • the center of gravity of the second semiconductor element 22 overlaps the center of the second die pad 10B in plan view.
  • the center of the second die pad 10B is the center when the second die pad 10B is divided into Lx (Lx is a positive odd number) in the first direction x, and the center of the second die pad 10B is divided into Ly (Ly) in the second direction y. is a positive odd number) This is the area corresponding to the center when divided.
  • Lx and Ly are each 3 or 5, for example, although there are no limitations.
  • the second semiconductor element 22 has a second main surface 22a and a second back surface 22b.
  • the second main surface 22a and the second back surface 22b are spaced apart from each other in the thickness direction z.
  • the second main surface 22a faces the same direction as the main surface 101 of the second die pad 10B.
  • the second back surface 22b faces the opposite side from the second main surface 22a in the thickness direction z, and faces the main surface 101 of the second die pad 10B.
  • the second semiconductor element 22 is mounted on the second die pad 10B, as shown in FIGS. 3 and 9. As shown in FIG. 12, the second semiconductor element 22 has a second main surface electrode 221, a main surface electrode 222, and a second back electrode 223.
  • the second main surface electrode 221 is arranged on the second main surface 22a. A current corresponding to the power converted by the second semiconductor element 22 flows through the second main surface electrode 221 .
  • the second main surface electrode 221 is, for example, a source electrode.
  • the second main surface electrode 221 includes a plurality of metal plating layers.
  • the second main surface electrode 221 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer.
  • the second principal surface electrode 221 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer. But that's fine.
  • the main surface electrode 222 is arranged on the second main surface 22a.
  • a second drive signal (gate voltage) for driving the second semiconductor element 22 is applied to the main surface electrode 222 .
  • the main surface electrode 222 is, for example, a gate electrode.
  • the area of the main surface electrode 222 is smaller than the area of the second main surface electrode 221.
  • the second back electrode 223 is arranged on the second back surface 22b.
  • the second back electrode 223 is provided facing the main surface 101 of the second die pad 10B.
  • a current corresponding to the power before being converted by the second semiconductor element 22 flows through the second back electrode 223 .
  • the second back electrode 223 is, for example, a drain electrode.
  • the semiconductor device A10 further includes two die bonding layers 231 and 232.
  • Each of the two die bonding layers 231 and 232 has conductivity.
  • Each die bonding layer 231, 232 is, for example, solder.
  • each die bonding layer 231, 232 may be made of sintered metal.
  • the die bonding layer 232 is interposed between the main surface 101 of the second die pad 10B and the second back electrode 223 of the second semiconductor element 22, as shown in FIGS. 9, 10, and 12.
  • the die bonding layer 232 bonds the main surface 101 of the second die pad 10B and the second back electrode 223 of the second semiconductor element 22. Thereby, the second back electrode 223 of the second semiconductor element 22 is electrically connected to the second die pad 10B.
  • the first terminal lead 14 is located apart from the first die pad 10A and the second die pad 10B in the second direction y, and the second terminal lead 15 and the third terminal lead in the first direction x. It is located between 16 and 16.
  • the first terminal lead 14 extends along the second direction y.
  • the first terminal lead 14 is electrically connected to the first main surface electrode 211 (source electrode) of the first semiconductor element 21 and the second main surface electrode 221 (source electrode) of the second semiconductor element 22 .
  • the first terminal lead 14 includes a covering portion 14A and an exposed portion 14B. As shown in FIG. 10, the covering portion 14A is covered with a sealing resin 50. As shown in FIGS.
  • the exposed portion 14B is connected to the covering portion 14A and exposed from the third side surface 55 of the sealing resin 50.
  • the exposed portion 14B extends in the second direction y away from the first die pad 10A and the second die pad 10B.
  • the surface of the exposed portion 14B is plated with tin, for example.
  • the covering portion 14A of the first terminal lead 14 has a seat surface 14C and an upright surface 14D.
  • the seat surface 14C faces the same side as each main surface 101 of the first die pad 10A and the second die pad 10B in the thickness direction z, and is thicker than the upper surface of the covering portion 14A (the surface facing upward in the thickness direction z). It is located on the lower side in direction z.
  • the upright surface 14D faces in a direction perpendicular to the thickness direction z and is connected to the seat surface 14C and the upper surface of the covering portion 14A.
  • the seat surface 14C and the upright surface 14D form a step difference in the covering portion 14A of the first terminal lead 14. Note that the covering portion 14A does not need to have either the seat surface 14C or the upright surface 14D.
  • the second terminal lead 15 includes a portion extending along the second direction y, and is connected to the first die pad 10A. Therefore, the second terminal lead 15 is electrically connected to the first back electrode 213 (drain electrode) of the first semiconductor element 21 via the first die pad 10A.
  • the second terminal lead 15 includes a covering portion 15A and an exposed portion 15B.
  • the covering portion 15A is connected to the third end surface 113 of the first die pad 10A, and is covered with the sealing resin 50.
  • the covering portion 15A is bent when viewed in the first direction x.
  • the exposed portion 15B is connected to the covering portion 15A and exposed from the third side surface 55 of the sealing resin 50.
  • the exposed portion 15B extends away from the first die pad 10A in the second direction y.
  • the surface of the exposed portion 15B is plated with tin, for example.
  • the fourth terminal lead 171 includes a covering portion 171A and an exposed portion 171B.
  • the covering portion 171A is covered with a sealing resin 50.
  • the exposed portion 171B is connected to the covering portion 171A and exposed from the third side surface 55 of the sealing resin 50.
  • the exposed portion 171B extends away from the first die pad 10A in the second direction y. For example, tin plating is applied to the surface of the exposed portion 171B.
  • the fifth terminal lead 172 includes a covered portion 172A and an exposed portion 172B.
  • the covering portion 172A is covered with a sealing resin 50.
  • the exposed portion 172B is connected to the covering portion 172A and is exposed from the sealing resin 50.
  • the exposed portion 172B extends away from the second die pad 10B in the second direction y.
  • the surface of the exposed portion 172B is plated with tin, for example.
  • the sixth terminal lead 181 is located away from the first die pad 10A in the second direction y, and between the second terminal lead 15 and the fourth terminal lead 171 in the first direction x. To position. As shown in FIG. 3, the seventh terminal lead 182 is located away from the second die pad 10B in the second direction y, and between the third terminal lead 16 and the fifth terminal lead 172 in the first direction x. To position. The sixth terminal lead 181 is electrically connected to the first main surface electrode 211 (source electrode) of the first semiconductor element 21 . A voltage corresponding to the current flowing through the first main surface electrode 211 of the first semiconductor element 21 is applied to the sixth terminal lead 181 .
  • the seventh terminal lead 182 is electrically connected to the second main surface electrode 221 (source electrode) of the second semiconductor element 22 .
  • a voltage corresponding to the current flowing through the second main surface electrode 221 (source electrode) of the second semiconductor element 22 is applied to the seventh terminal lead 182.
  • the sixth terminal lead 181 includes a covering portion 181A and an exposed portion 181B.
  • the covering portion 181A is covered with a sealing resin 50.
  • the exposed portion 181B is connected to the covering portion 181A and exposed from the third side surface 55 of the sealing resin 50.
  • the exposed portion 181B extends away from the first die pad 10A in the second direction y. For example, tin plating is applied to the surface of the exposed portion 181B.
  • the seventh terminal lead 182 includes a covered portion 182A and an exposed portion 182B.
  • the covering portion 182A is covered with a sealing resin 50.
  • the exposed portion 182B is connected to the covering portion 182A and exposed from the third side surface 55 of the sealing resin 50.
  • the exposed portion 182B extends away from the second die pad 10B in the second direction y. For example, tin plating is applied to the surface of the exposed portion 182B.
  • each height h of the exposed portion 14B of the first terminal lead 14, the exposed portion 15B of the second terminal lead 15, and the exposed portion 16B of the third terminal lead 16 is They are the same (or nearly the same). Furthermore, each of these thicknesses are the same (or substantially the same). Therefore, when viewed in the first direction x, at least a portion (exposed portion 14B) of the first terminal lead 14 overlaps each of the second terminal lead 15 and the third terminal lead 16 (see FIG. 7).
  • the first conductive portion 31 connects the first main surface electrode 211 of the first semiconductor element 21, the second main surface electrode 221 of the second semiconductor element 22, and the first terminal lead 14 to each other.
  • Make conductive The first conductive portion 31 is a metal plate.
  • the first conductive portion 31 is a metal clip.
  • the composition of the first conductive portion 31 includes copper, for example.
  • the first conductive portion 31 is covered with a sealing resin 50.
  • the first conductive section 31 includes a first joint section 311 , a second joint section 312 , a third joint section 313 , a first connection section 314 , and a second connection section 315 .
  • the first bonding portion 311 is bonded to the first main surface electrode 211 of the first semiconductor element 21, as shown in FIGS. 3, 4, 9, and 11.
  • the first joint portion 311 includes two band-shaped portions 311a. As shown in FIGS. 3 and 4, each of the two strip portions 311a has the first direction x as its longitudinal direction. The two strips 311a are arranged parallel to each other in plan view. Note that the first joint portion 311 does not need to be separated into two band-like portions 311a.
  • the area of the first joint portion 311 in a plan view (the sum of the areas of the two strip portions 311a) is, for example, 10% or more and 100% or less of the area of the first main surface electrode 211 in a plan view.
  • the second bonding portion 312 is bonded to the second main surface electrode 221 of the second semiconductor element 22, as shown in FIGS. 3, 4, 9, and 12.
  • the second joint portion 312 includes two band-shaped portions 312a. As shown in FIGS. 3 and 4, each of the two strip portions 312a has a first direction x as its longitudinal direction. The two strips 312a are arranged parallel to each other in plan view. Note that the second joint portion 312 does not need to be separated into two band-like portions 312a.
  • the area of the second joint portion 312 in a plan view (the sum of the areas of the two strip portions 312a) is, for example, 10% or more and 100% or less of the area of the second main surface electrode 221 in a plan view.
  • the third joint portion 313 is joined to the covering portion 14A of the first terminal lead 14, as shown in FIGS. 3, 4, 10, and 14.
  • the third joint portion 313 is joined to the seat surface 14C of the first terminal lead 14.
  • the third joint 313 extends in the first direction x. At least a portion of the third joint portion 313 is accommodated in a region defined by the seating surface 14C and the upright surface 14D of the first terminal lead 14. Note that when the seating surface 14C and the upright surface 14D are not formed on the covering portion 14A of the first terminal lead 14, the third joint portion 313 is formed on the upper surface of the covering portion 14A (the surface facing upward in the thickness direction z). ).
  • the first connecting part 314 is connected to the first joint part 311 and the second joint part 312, as shown in FIGS. 3, 4, and 9.
  • the first connecting portion 314 has a band shape extending in the first direction x when viewed from above.
  • the first connecting portion 314 includes a main body portion 314a and a pair of bent portions 314b and 314c, as shown in FIGS. 4 and 9.
  • the main body part 314a constitutes the main part of the first connecting part 314.
  • the main body portion 314a is strip-shaped in plan view.
  • the main body portion 314a extends in the first direction x.
  • the main body portion 314a is located above the first joint portion 311 and the second joint portion 312 in the thickness direction z.
  • the pair of bent portions 314b and 314c are respectively connected to both ends of the main body portion 314a in the first direction x.
  • the pair of bent portions 314b and 314c are bent downward in the thickness direction z from the main body portion 314a.
  • the pair of bent portions 314b are connected to the first joint portion 311, and the pair of bent portions 314c are connected to the second joint portion 312.
  • the bent portion 314b is bifurcated, and is connected to the two band-like portions 311a, respectively.
  • the bent portion 314b does not have to be bifurcated.
  • the first joint portion 311 does not need to be separated into two band-like portions 311a.
  • the bent portion 314c is bifurcated and is connected to the two band-like portions 312a, respectively.
  • the bent portion 314c does not have to be bifurcated.
  • the second joint portion 312 does not need to be separated into two strip portions 312a.
  • the second connecting part 315 is connected to the first connecting part 314 and the third joint part 313, as shown in FIGS. 3, 4, and 10.
  • the second connecting portion 315 has a band shape extending in the second direction y when viewed from above.
  • the second connecting portion 315 extends from the first connecting portion 314 in the second direction y and is connected to the third joint portion 313 .
  • the second connecting portion 315 is connected to the center of the main body portion 314a of the first connecting portion 314 in the first direction x.
  • the second connecting portion 315 includes a main body portion 315a and a bent portion 315b, as shown in FIGS. 4, 10, and 14.
  • the main body part 315a constitutes the main part of the second connecting part 315.
  • the main body portion 315a is strip-shaped in plan view.
  • the main body portion 315a extends in the second direction y.
  • the main body portion 315a is located above the third joint portion 313 in the thickness direction z.
  • the main body portion 315a is arranged at the same (or substantially the same) position as the main body portion 314a in the thickness direction z.
  • the bent portions 315b are respectively connected to end portions of the main body portion 315a on one side in the second direction y (the side where the third joint portion 313 is located in the second direction y).
  • the bent portion 315b is bent downward in the thickness direction z from the main body portion 315a.
  • the bent portion 315b is connected to the third joint portion 313.
  • the first conductive portion 31 is bent in the thickness direction z by each of the pair of bending portions 314b, 314c and the bending portion 315b, but unlike this configuration, the first conduction portion 31
  • the first main surface 21a, the second main surface 22a of the second semiconductor element 22, and the upper surface of the covering portion 14A of the first terminal lead 14 are the same ( or substantially the same height), the first conductive portion 31 does not need to be bent in the thickness direction z. That is, the first conductive portion 31 may be a flat plate.
  • the first conductive portion 31 is T-shaped in plan view. Further, the first conductive portion 31 is symmetrical with respect to the auxiliary line La as the axis in plan view.
  • the auxiliary line La extends in the second direction y and overlaps the third joint 313 in plan view.
  • the auxiliary line La overlaps the center of the second connecting portion 315 in the first direction x when viewed from above, and also overlaps the center of the first connecting portion 314 in the first direction x when viewed from above.
  • the center of gravity CG (see FIG. 4) of the first conductive portion 31 is located above the first conductive portion 31. That is, the center of gravity CG of the first conductive part 31 overlaps with the first conductive part 31 in plan view.
  • the semiconductor device A10 further includes a plurality of bonding layers 33, 34, and 35, as shown in FIGS. 11, 12, and 14.
  • Each of the plurality of bonding layers 33, 34, and 35 is electrically conductive.
  • Each of the plurality of bonding layers 33, 34, and 35 is made of, for example, solder, but may also be made of sintered metal.
  • the bonding layer 33 is interposed between the first main surface electrode 211 of the first semiconductor element 21 and the first bonding portion 311 of the first conductive portion 31 .
  • the bonding layer 33 electrically connects the first main surface electrode 211 and the first bonding portion 311 . As shown in FIG.
  • the bonding layer 34 is interposed between the second main surface electrode 221 of the second semiconductor element 22 and the second bonding portion 312 of the first conductive portion 31 .
  • the bonding layer 34 electrically connects the second main surface electrode 221 and the second bonding portion 312.
  • the bonding layer 35 is interposed between the covering portion 14A of the first terminal lead 14 and the third bonding portion 313 of the first conductive portion 31.
  • the bonding layer 35 electrically connects the covering portion 14A and the third bonding portion 313.
  • the thickness t (see FIG. 11) of the first bonding portion 311 is 0.1 mm or more, and the maximum thickness Tmax (see FIG. 11) of the bonding layer 33. It is less than twice that.
  • the maximum thickness Tmax of the bonding layer 33 is greater than the thickness of the first semiconductor element 21.
  • the thickness t (see FIG. 12) of the second bonding portion 312 is 0.1 mm or more and not more than twice the maximum thickness Tmax (see FIG. 12) of the bonding layer 34. It is.
  • the maximum thickness Tmax of the bonding layer 34 is greater than the thickness of the second semiconductor element 22.
  • Each of the pair of first connecting members 41A, 41B and the pair of second connecting members 42A, 42B is, for example, a bonding wire.
  • Each composition of the pair of first connecting members 41A, 41B and the pair of second connecting members 42A, 42B includes gold.
  • the compositions of the pair of first connecting members 41A, 41B and the pair of second connecting members 42A, 42B may include copper or aluminum (Al).
  • the first connecting member 41A is joined to the main surface electrode 212 of the first semiconductor element 21 and the covering portion 171A of the fourth terminal lead 171.
  • the fourth terminal lead 171 is electrically connected to the main surface electrode 212 of the first semiconductor element 21 .
  • the first connecting member 41B is joined to the main surface electrode 222 of the second semiconductor element 22 and the covering portion 172A of the fifth terminal lead 172, as shown in FIG. Thereby, the fifth terminal lead 172 is electrically connected to the main surface electrode 222 of the second semiconductor element 22.
  • the second connecting member 42A is joined to the first main surface electrode 211 of the first semiconductor element 21 and the covering portion 181A of the sixth terminal lead 181.
  • the sixth terminal lead 181 is electrically connected to the first main surface electrode 211 of the first semiconductor element 21 .
  • the second connecting member 42B is joined to the second main surface electrode 221 of the second semiconductor element 22 and the covering portion 182A of the seventh terminal lead 182, as shown in FIG. Thereby, the seventh terminal lead 182 is electrically connected to the second main surface electrode 221 of the second semiconductor element 22 .
  • the semiconductor device A10 configured as described above, as shown in FIG. 19, the first main surface electrode 211 of the first semiconductor element 21 and the second main surface electrode 221 of the second semiconductor element 22 are electrically connected to each other. and are commonly connected to the first terminal lead 14.
  • the semiconductor device A10 has the source electrodes of the two MOSFETs connected in common to one terminal (first terminal lead 14). Configure a circuit (source common connected circuit).
  • the functions and effects of the semiconductor device A10 according to the first embodiment are as follows.
  • the semiconductor device A10 includes a first semiconductor element 21, a second semiconductor element 22, and a sealing resin 50.
  • the sealing resin 50 covers the first semiconductor element 21 and the second semiconductor element 22. According to this configuration, in the semiconductor device A10, two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) are packaged with one sealing resin 50. Therefore, the semiconductor device A10 can reduce the mounting area on the circuit board on which the semiconductor device A10 is mounted.
  • the first main surface electrode 211 of the first semiconductor element 21 and the second main surface electrode 221 of the second semiconductor element 22 are electrically connected to the first terminal lead 14 inside the sealing resin 50.
  • the first terminal lead 14 becomes a common terminal for the first main surface electrode 211 and the second main surface electrode 221.
  • the semiconductor device A10 is connected to the common source.
  • the first terminal lead 14 serves as a common terminal for each source of the two MOSFETs. In other words, in the semiconductor device A10, a circuit in which two MOSFETs are connected to common source can be packaged into one package.
  • the first conductive portion 31 includes a first bonding portion 311, a second bonding portion 312, and a third bonding portion 313.
  • the first bonding portion 311 is conductively bonded to the first main surface electrode 211 of the first semiconductor element 21, the second bonding portion 312 is conductively bonded to the second main surface electrode 221 of the second semiconductor element 22, and the third
  • the joint portion 313 is electrically connected to the first terminal lead 14 (sheathing portion 14A).
  • the first principal surface electrode 211, the second principal surface electrode 221, and the first terminal lead 14 can be electrically connected to each other by one member (first conductive portion 31).
  • the first conductive portion 31 is symmetrical with respect to the axis (auxiliary line La) extending in the second direction y when viewed in the thickness direction z. Further, the axis (auxiliary line La) overlaps the third joint portion 313. According to this configuration, the conductive distance from the third bonding portion 313 (covering portion 14A of the first terminal lead 14) to the first bonding portion 311 (first main surface electrode 211 of the first semiconductor element 21) and the third It is possible to equalize the conduction distance from the joint portion 313 (covering portion 14A of the first terminal lead 14) to the second joint portion 312 (second main surface electrode 221 of the second semiconductor element 22).
  • the center of gravity CG of the first conductive portion 31 overlaps with the first conductive portion 31 when viewed in the thickness direction z. According to this configuration, it is possible to transport the first conductive portion 31 in a stable posture during manufacturing of the semiconductor device A10. As a result, it is possible to prevent the first conductive part 31 from being joined to the first semiconductor element 21, the second semiconductor element 22, and the first terminal lead 14 in an inclined state. It can be appropriately bonded to each of the first main surface electrode 211 of the semiconductor element 21, the second main surface electrode 221 of the second semiconductor element 22, and the covering portion 14A of the first terminal lead 14.
  • the first conductive section 31 includes a first connecting section 314 and a second connecting section 315.
  • the first connecting portion 314 extends along the first direction x between the first joint portion 311 and the second joint portion 312 when viewed in the thickness direction z.
  • the second connecting portion 315 extends in the second direction y between the first connecting portion 314 (main body portion 314a) and the third joint portion 313 when viewed in the thickness direction z.
  • the first conductive portion 31 has a T-shape when viewed in the thickness direction z, so that the first conductive portion 31 can be made line symmetrical with respect to the axis (auxiliary line La).
  • the center of gravity CG of the first conductive portion 31 can be overlapped with the first conductive portion 31 when viewed in the thickness direction z.
  • the sealing resin 50 has a plurality of recesses 581.
  • Each of the plurality of recesses 581 is recessed from the main resin surface 51 in the thickness direction z.
  • the plurality of recesses 581 overlap the first die pad 10A in plan view.
  • the plurality of recesses 581 are marks formed by fixing the first die pad 10A with a plurality of pins during manufacturing of the semiconductor device A10. Therefore, since the first die pad 10A is held down by the plurality of pins during the manufacture of the semiconductor device A10, it is possible to suppress the first die pad 10A from swinging during the manufacture. Thereby, it is possible to suppress the generation of a gap between the back surface 102 of the first die pad 10A and the mold for forming the sealing resin 50, so it is possible to suppress the generation of resin burrs on the sealing resin 50. .
  • the sealing resin 50 has a plurality of recesses 582.
  • Each of the plurality of recesses 582 is recessed from the main resin surface 51 in the thickness direction z.
  • the plurality of recesses 582 overlap the second die pad 10B in plan view.
  • the plurality of recesses 582 are marks formed by fixing the second die pad 10B with a plurality of pins during manufacturing of the semiconductor device A10. Therefore, since the second die pad 10B is held down by the plurality of pins during the manufacture of the semiconductor device A10, it is possible to suppress the second die pad 10B from swinging during the manufacture. Thereby, it is possible to suppress the generation of a gap between the back surface 102 of the second die pad 10B and the mold for forming the sealing resin 50, so it is possible to suppress the generation of resin burrs on the sealing resin 50. .
  • the first conductive portion 31 does not overlap the four corners of the first die pad 10A in plan view. According to this configuration, when manufacturing the semiconductor device A10, it becomes possible to press the four corners of the first die pad 10A with the pins that fix the first die pad 10A. In other words, in the semiconductor device A10, it is possible to suppress the swinging of the first die pad 10A during manufacturing. Similarly, the first conductive portion 31 does not overlap the four corners of the second die pad 10B in plan view. According to this configuration, when manufacturing the semiconductor device A10, it is possible to press the four corners of the second die pad 10B with the pins that fix the second die pad 10B. In other words, in the semiconductor device A10, it is possible to suppress the swinging of the second die pad 10B during manufacturing.
  • FIGS. 20 to 22 respectively show semiconductor devices A11 to A13 according to a first modification to a third modification of the first embodiment.
  • Each of the semiconductor devices A11 to A13 differs from the semiconductor device A10 in the following points.
  • the difference is that the first conductive portion 31 has a different shape in plan view. Note that in the examples shown in FIGS. 20 to 22 (each of the semiconductor devices A11 to A13), it is assumed that the first conductive portion 31 is not bent in the thickness direction z; It may be bent in direction z.
  • the first conductive part 31 of the semiconductor device A11 includes a first joint part 311, a second joint part 312, a third joint part 313, a
  • the first connecting portion 314 and the second connecting portion 315 are included.
  • the first connecting portion 314 does not extend linearly along the first direction x, but is bent in a V-shape in a plan view.
  • the first connecting part 314 includes a band-shaped part that extends from the first joint part 311 at an angle with respect to each of the first direction x and the second direction y in a plan view, and the second joint part 312 in a plan view.
  • the first conductive portion 31 of the semiconductor device A11 has a Y-shape in plan view.
  • the first conduction section 31 of the semiconductor device A12 includes a first junction section 311, a second junction section 312, a third junction section 313, and a pair of connecting sections 316.
  • One of the pair of connecting parts 316 is connected to the first joint part 311 and the third joint part 313.
  • the connecting portion 316 extends linearly from the first joint portion 311 to the third joint portion 313 in a plan view.
  • the other of the pair of connecting parts 316 is connected to the second joint part 312 and the third joint part 313.
  • the connecting portion 316 extends linearly from the second joint portion 312 to the third joint portion 313 in a plan view. Both of the pair of connecting portions 316 extend from the third joint portion 313 .
  • the first conductive portion 31 of the semiconductor device A12 has a V-shape in plan view.
  • the first conduction section 31 of the semiconductor device A13 includes a first junction section 311, a second junction section 312, a third junction section 313, a first connection section 314, and a second connection section 315.
  • the second connecting portion 315 connects to the first bonding portion 311 instead of the first connecting portion 314. That is, the second connecting portion 315 of the semiconductor device A13 connects the first bonding portion 311 and the third bonding portion 313.
  • the second joint portion 312 and the third joint portion 313 are electrically connected via the first joint portion 311.
  • Each of the semiconductor devices A11 to A13 according to the first modification to the third modification of the first embodiment has two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) in one, similar to the semiconductor device A10.
  • One package is made up of two sealing resins 50. Therefore, similarly to the semiconductor device A10, each of the semiconductor devices A11 to A13 can reduce the mounting area on the circuit board on which the semiconductor devices A11 to A13 are mounted.
  • each of the semiconductor devices A11 to A13 has the same configuration as the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10.
  • the first conductive portion 31 is line symmetrical with respect to the auxiliary line La. Therefore, like the semiconductor device A10, each of the semiconductor devices A11 and A12 is connected from the third bonding portion 313 (covering portion 14A of the first terminal lead 14) to the first bonding portion 311 (the first main surface of the first semiconductor element 21). the conductive distance from the third joint 313 (covering portion 14A of the first terminal lead 14) to the second joint 312 (second principal surface electrode 221 of the second semiconductor element 22); It is possible to equalize the Further, in the semiconductor device A11, the center of gravity CG of the first conductive portion 31 overlaps with the first conductive portion 31 when viewed in the thickness direction z. Therefore, when manufacturing the semiconductor device A11, it is possible to transport the first conductive portion 31 in a stable posture.
  • the first conductive portion 31 is As long as the first main surface electrode 211, the second main surface electrode 221 of the second semiconductor element 22, and the first terminal lead 14 are electrically connected to each other, the shape can be changed as appropriate.
  • FIG. 23 shows a semiconductor device A14 according to a fourth modification of the first embodiment.
  • the semiconductor device A14 differs from the semiconductor device A10 in the following points. That is, the first conductive section 31 of the semiconductor device A14 is divided into a plurality of parts.
  • the first conductive portion 31 of the semiconductor device A14 includes a first conductor 31A and a second conductor 31B that are spaced apart from each other.
  • the first conductor 31A is joined to the first main surface electrode 211 of the first semiconductor element 21 and the covering portion 14A of the first terminal lead 14 to electrically connect them.
  • the first conductor 31A includes a joint portion 317A, a joint portion 318A, and a connecting portion 319A.
  • the bonding portion 317A is bonded to the first main surface electrode 211 of the first semiconductor element 21.
  • the joint portion 317A is divided into two band-shaped portions 311a, similar to the first joint portion 311 described above. Unlike this example, the joint portion 317A does not need to be divided into two parts.
  • the joint portion 318A is joined to the covering portion 14A of the first terminal lead 14.
  • the connecting portion 319A is connected to the joint portion 317A and the joint portion 318A.
  • the second conductor 31B is joined to the second main surface electrode 221 of the second semiconductor element 22 and the covering portion 14A of the first terminal lead 14 to electrically connect them.
  • the second conductor 31B includes a joint portion 317B, a joint portion 318B, and a connecting portion 319B.
  • the bonding portion 317B is bonded to the second main surface electrode 221 of the second semiconductor element 22.
  • the joint portion 317B is divided into two band-like portions 312a, similar to the second joint portion 312 described above. Unlike this example, the joint portion 317B does not have to be divided into two parts.
  • the joint portion 318B is joined to the covering portion 14A of the first terminal lead 14.
  • the connecting portion 319B is connected to the joint portion 317B and the joint portion 318B.
  • the semiconductor device A14 In the semiconductor device A14 according to the fourth modification of the first embodiment, two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) are packaged in one package using one sealing resin 50, similarly to the semiconductor device A10. has been made into Therefore, like the semiconductor device A10, the semiconductor device A14 can reduce the mounting area on the circuit board on which the semiconductor device A14 is mounted. In addition, the semiconductor device A14 has the same configuration as the semiconductor device A10, and has the same effects as the semiconductor device A10.
  • the first conductive portions 31 are not limited to being one member, but are spaced apart from each other.
  • the structure may include two or more members.
  • the semiconductor device A15 differs from the semiconductor device A10 in the following points. That is, the first semiconductor element 21 of the semiconductor device A15 is not a transistor but a diode.
  • the first semiconductor element 21 of the semiconductor device A15 has a first main surface electrode 211 and a first back electrode 213.
  • the first semiconductor element 21 of the semiconductor device A11 does not have the main surface electrode 212, as shown in FIG.
  • the first semiconductor element 21 of the semiconductor device A15 is a diode
  • the first main surface electrode 211 is, for example, an anode electrode
  • the first back surface electrode 213 is, for example, a cathode electrode.
  • the semiconductor device A15 does not include either the first connection member 41A or the second connection member 42A.
  • the fourth terminal lead 171 and the sixth terminal lead 181 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22, respectively. Therefore, in the semiconductor device A15, the fourth terminal lead 171 and the sixth terminal lead 181 are each non-connect terminals.
  • the semiconductor device A15 does not need to further include the second connection member 42B. In this case, the seventh terminal lead 182 also becomes a non-connect terminal.
  • FIGS. 26 and 27 show a semiconductor device A16 according to a sixth modification of the first embodiment.
  • the semiconductor device A16 differs from the semiconductor device A10 in the following points. That is, the second semiconductor element 22 of the semiconductor device A12 is not a transistor but a diode.
  • the second semiconductor element 22 of the semiconductor device A16 has a second main surface electrode 221 and a second back surface electrode 223.
  • the second semiconductor element 22 of the semiconductor device A16 does not have the main surface electrode 222, as shown in FIG.
  • the second semiconductor element 22 of the semiconductor device A16 is a diode
  • the second main surface electrode 221 is, for example, an anode electrode
  • the second back surface electrode 223 is, for example, a cathode electrode.
  • the semiconductor device A16 does not include either the first connection member 41B or the second connection member 42B.
  • the fifth terminal lead 172 and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22, respectively. Therefore, in the semiconductor device A16, the fifth terminal lead 172 and the seventh terminal lead 182 are each non-connect terminals. Note that, unlike the examples shown in FIGS. 26 and 27, the semiconductor device A16 does not need to further include the second connection member 42A. In this case, the sixth terminal lead 181 also becomes a non-connect terminal.
  • the semiconductor device A16 As shown in FIG. 27, in the semiconductor device A16, the first main surface electrode 211 (source electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are electrically connected to each other. It is connected to the.
  • the semiconductor device A16 has a circuit configuration in which the source electrode of the MOSFET and the anode electrode of the diode are commonly connected to the first terminal lead 14.
  • FIGS. 28 and 29 show a semiconductor device A17 according to a seventh modification of the first embodiment.
  • the semiconductor device A17 differs from the semiconductor device A10 in the following points. That is, each of the first semiconductor element 21 and the second semiconductor element 22 of the semiconductor device A17 is a diode instead of a transistor.
  • the first semiconductor element 21 of the semiconductor device A17 has a first main surface electrode 211 and a first back surface electrode 213.
  • the first semiconductor element 21 of the semiconductor device A17 does not have the main surface electrode 212, as shown in FIG.
  • the first semiconductor element 21 of the semiconductor device A17 is a diode
  • the first main surface electrode 211 is an anode electrode
  • the first back surface electrode 213 is a cathode electrode.
  • the second semiconductor element 22 of the semiconductor device A17 has a second main surface electrode 221 and a second back surface electrode 223.
  • the second semiconductor element 22 of the semiconductor device A17 does not have the main surface electrode 222, as shown in FIG.
  • the second semiconductor element 22 of the semiconductor device A17 is a diode
  • the second main surface electrode 221 is an anode electrode
  • the second back surface electrode 223 is a cathode electrode.
  • the semiconductor device A17 does not include either the pair of first connecting members 41A, 41B and the pair of second connecting members 42A, 42B.
  • the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are connected to the first semiconductor element 21 and the second semiconductor element, respectively. There is no conduction to any of 22. Therefore, in the semiconductor device A17, the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are each non-connect terminals.
  • the semiconductor device A17 As shown in FIG. 29, in the semiconductor device A17, the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are electrically connected to each other. It is connected to the. In other words, the semiconductor device A17 has a circuit configuration in which the anode electrodes of two diodes are commonly connected to the first terminal lead 14.
  • each of the semiconductor devices A15 to A17 according to the fifth modification to the seventh modification of the first embodiment, two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) are integrated into one, similarly to the semiconductor device A10.
  • One package is made up of two sealing resins 50. Therefore, similarly to the semiconductor device A10, each of the semiconductor devices A15 to A17 can reduce the mounting area on the circuit board on which the semiconductor devices A15 to A17 are mounted.
  • each of the semiconductor devices A15 to A17 has the same configuration as the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10.
  • the semiconductor device of the present disclosure has three types of circuits (each source electrode of two MOSFETs) by combining the first semiconductor element 21 and the second semiconductor element 22. , a circuit in which the source electrode of a MOSFET and an anode electrode of a diode are connected in common, and a circuit in which each anode electrode of two diodes is connected in common).
  • the configurations of each terminal lead 13, sealing resin 50, etc. are common to each semiconductor device A10, A15 to A17. Therefore, the semiconductor device of the present disclosure can configure any of three types of circuits while keeping the package appearance the same.
  • the semiconductor device of the present disclosure even if each of the first semiconductor element 21 and the second semiconductor element 22 is a transistor or a diode, the configuration of each terminal lead 13 and the sealing resin 50 can be maintained as is. Can be used. As a result, the semiconductor device of the present disclosure can use a common package structure for any of the three types of circuits described above, which is preferable for improving productivity.
  • the semiconductor device of the present disclosure is arranged such that the center of gravity of the first semiconductor element 21 overlaps the center of the first die pad 10A in plan view. Further, the second semiconductor element 22 is arranged so that its center of gravity overlaps with the center of the second die pad 10B. This configuration is preferable in making the first conductive portion 31 common.
  • FIG. 30 to 32 show a semiconductor device A20 according to the second embodiment.
  • the semiconductor device A20 differs from the semiconductor device A10 in the following points. The point is that the second conductive portion 32 is further provided.
  • the second conductive portion 32 is joined to the first die pad 10A and the second die pad 10B, as shown in FIGS. 30 and 31.
  • the second conductive portion 32 is a metal plate.
  • the second conductive portion 32 is a metal clip.
  • the composition of the second conductive portion 32 includes copper, for example.
  • the first die pad 10A and the second die pad 10B are electrically connected to each other via the second conductive portion 32.
  • the first back electrode 213 and the second back electrode 223 are electrically connected to each other via the first die pad 10A, the second conductive portion 32, and the second die pad 10B.
  • the second conductive portion 32 is covered with a sealing resin 50.
  • the second conductive portion 32 is strip-shaped in plan view.
  • the second conductive section 32 includes a fourth joint section 321, a fifth joint section 322, and a third connecting section 323.
  • the second die pad 10B does not have either the seat surface 103 or the upright surface 104, but it may have these.
  • the fourth joint portion 321 is joined to the main surface 101 of the first die pad 10A, as shown in FIGS. 30 and 31.
  • the main surface 101 of the first die pad 10A is an example of a "first mounting surface” described in the claims.
  • the fifth bonding portion 322 is bonded to the main surface 101 of the second die pad 10B, as shown in FIGS. 30 and 31.
  • the main surface 101 of the second die pad 10B is an example of a "second mounting surface” described in the claims.
  • the third connecting part 323 is connected to the fourth joint part 321 and the fifth joint part 322, as shown in FIGS. 30 and 31.
  • the third connecting portion 323 extends along the first direction x.
  • the semiconductor device A20 further includes two bonding layers 36 and 37, as shown in FIGS. 30 and 31.
  • the two bonding layers 36 and 37 are each electrically conductive.
  • the two bonding layers 36, 37 are each made of, for example, solder, but may also be made of sintered metal.
  • the bonding layer 36 is interposed between the first die pad 10A and the fourth bonding portion 321 of the second conductive portion 32.
  • the bonding layer 36 electrically connects the first die pad 10A and the fourth bonding portion 321 of the second conductive portion 32.
  • the bonding layer 37 is interposed between the second die pad 10B and the fifth bonding portion 322 of the second conductive portion 32.
  • the bonding layer 37 electrically connects the second die pad 10B and the fifth bonding portion 322 of the second conductive portion 32.
  • the semiconductor device A20 configured as above, as shown in FIG. 32, like the semiconductor device A10, the first main surface electrode 211 of the first semiconductor element 21 and the second main surface electrode of the second semiconductor element 221 are electrically connected to each other.
  • the semiconductor device A20 constitutes a circuit in which the respective source electrodes of the two MOSFETs are connected in common (source common connected circuit).
  • the semiconductor device A20 as shown in FIG. 32, the first back electrode 213 of the first semiconductor element 21 and the second back electrode 223 of the second semiconductor element 22 are electrically connected to each other.
  • the semiconductor device A20 constitutes a circuit in which the respective drain electrodes of the two MOSFETs are connected in common. Therefore, as shown in FIG. 32, the semiconductor device A20 constitutes a circuit in which the first semiconductor element 21 and the second semiconductor element 22 (two MOSFETs) are connected in parallel.
  • the semiconductor device A20 like the semiconductor device A10, two semiconductor elements (first semiconductor element 21 and second semiconductor element 22) are packaged with one sealing resin 50. Therefore, like the semiconductor device A10, the semiconductor device A20 can reduce the mounting area on the circuit board on which the semiconductor device A20 is mounted. In addition, the semiconductor device A20 has the same configuration as the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10.
  • the semiconductor device A20 the first die pad 10A and the second die pad 10B are electrically connected by the second conductive portion 32. According to this configuration, the first back electrode 213 of the first semiconductor element 21 and the second back electrode 223 of the second semiconductor element 22 are electrically connected to each other.
  • the semiconductor device A20 has a structure in which each of the drains of the two MOSFETs A circuit is formed in which the electrodes are connected in common. In other words, in the semiconductor device A20, a circuit in which the drain electrodes of two MOSFETs are commonly connected can be packaged into one package.
  • the semiconductor device A20 like the semiconductor device A10, the first main surface electrode 211 and the second main surface electrode 221 are further electrically connected. Therefore, in the semiconductor device A20, a circuit in which the first semiconductor element 21 and the second semiconductor element 22 are connected in parallel can be packaged into one package.
  • FIGS. 33 and 34 show a semiconductor device A21 according to a first modification of the second embodiment.
  • the semiconductor device A21 differs from the semiconductor device A20 in the following points. That is, the first die pad 10A has a seat surface 103 and a rising surface 104, similarly to the second die pad 10B.
  • the seat surface 103 and the rising surface 104 of the first die pad 10A are configured similarly to the seat surface 103 and the rising surface 104 of the second die pad 10B, respectively.
  • the fourth bonding portion 321 of the second conductive portion 32 is bonded to the seating surface 103 of the first die pad 10A via the bonding layer 36. At least a portion of the fourth joint 321 is accommodated in a region defined by the seat surface 103 and the upright surface 104 of the first die pad 10A. Further, in the semiconductor device A21, the fifth bonding portion 322 of the second conductive portion 32 is bonded to the seating surface 103 of the second die pad 10B via the bonding layer 37. At least a portion of the fifth joint portion 322 is accommodated in a region defined by the seat surface 103 and the upright surface 104 of the second die pad 10B.
  • 35 and 36 show a semiconductor device A22 according to a second modification of the second embodiment.
  • the semiconductor device A22 differs from the semiconductor device A20 in the following points. The difference is that the position of the second conductive portion 32 is different.
  • the second conductive portion 32 overlaps the first conductive portion 31 (first connecting portion 314) in plan view.
  • the pair of bent portions 314b and 314c make the first connecting portion 314 (main body portion 314a) stronger than the first connecting portion 311 and the second connecting portion 312. is arranged above in the thickness direction z. Therefore, the distance between the main body portion 314a and the main surface 101 of the first die pad 10A and the main surface 101 of the second die pad 10B becomes large. By increasing this distance, the second conductive portion 32 can be disposed below the first conductive portion 31 in the thickness direction z.
  • the second conductive portion 32 overlaps the line segment connecting the first semiconductor element 21 and the second semiconductor element 22 in plan view.
  • FIGS. 37 and 38 show a semiconductor device A23 according to a third modification of the second embodiment.
  • the semiconductor device A23 differs from the semiconductor device A20 in the following points. That is, the second conductive portion 32 of the semiconductor device A23 is arranged below the first die pad 10A and the second die pad 10B in the thickness direction z.
  • the second conductive portion 32 is bonded to the back surface 102 of the first die pad 10A by the bonding layer 36, and is bonded to the back surface 102 of the second die pad 10B by the bonding layer 37. has been done.
  • the second conductive portion 32 is larger than the first die pad 10A and the second die pad 10B in plan view. In plan view, the entire first die pad 10A and the entire second die pad 10B overlap the second conductive portion 32, respectively.
  • the lower surface of the second conductive portion 32 (the surface facing downward in the thickness direction z) is exposed from the sealing resin 50 (resin back surface 52). Unlike this configuration, the lower surface of the second conductive portion 32 may be covered with the sealing resin 50.
  • an insulating member an insulating plate or an insulating sheet
  • each of the semiconductor devices A21 to A23 according to the first modification to the third modification of the second embodiment, two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) are integrated into one, similarly to the semiconductor device A20.
  • One package is made up of two sealing resins 50. Therefore, similarly to the semiconductor device A20, each of the semiconductor devices A21 to A23 can reduce the mounting area on the circuit board on which the semiconductor devices A21 to A23 are mounted.
  • each of the semiconductor devices A21 to A23 has the same configuration as the semiconductor device A20, and thus achieves the same effects as the semiconductor device A20.
  • FIG. 39 shows a semiconductor device A24 according to a fourth modification of the second embodiment.
  • the semiconductor device A24 differs from the semiconductor device A20 in the following points. The difference is that the first conductive portion 31 has a different shape in plan view.
  • the first conductive portion 31 is V-shaped in plan view, similar to the first conductive portion 31 of the semiconductor device A14. Note that the first conductive portion 31 of the semiconductor device A24 is configured similarly to the first conductive portion 31 of the semiconductor device A14, but unlike this example, the first conductive portion 31 of the semiconductor device A11 or the semiconductor device A13 is configured similarly to the first conductive portion 31 of the semiconductor device A14. They may be configured similarly.
  • the second conductive portion 32 overlaps the line segment connecting the first semiconductor element 21 and the second semiconductor element 22 in plan view. That is, in the semiconductor device A24, the distance of the conduction path between the first back electrode 213 of the first semiconductor element 21 and the second back electrode 223 of the second semiconductor element 22 is shortened compared to the semiconductor device A20.
  • the semiconductor device A24 according to the fourth modification of the second embodiment includes two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) in one package using one sealing resin 50. has been made into Therefore, like the semiconductor device A20, the semiconductor device A24 can reduce the mounting area on the circuit board on which the semiconductor device A24 is mounted. In addition, the semiconductor device A24 has the same configuration as the semiconductor device A20, and has the same effects as the semiconductor device A20.
  • FIGS. 40 and 41 show a semiconductor device A25 according to a fifth modification of the second embodiment.
  • the semiconductor device A25 differs from the semiconductor device A20 in the following points.
  • the first semiconductor element 21 of the semiconductor device A25 is not a transistor but a diode like the semiconductor device A15.
  • the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (source electrode) of the second semiconductor element 22 are connected to each other via the first conductive part 31. , electrically connected. Further, the first back electrode 213 (cathode electrode) of the first semiconductor element 21 and the second back electrode 223 (drain electrode) of the second semiconductor element 22 are electrically connected via the second conductive part 32 . ing. That is, in the semiconductor device A25, as shown in FIG. 41, a MOSFET and a diode are connected in parallel.
  • FIGS. 42 and 43 show a semiconductor device A26 according to a sixth modification of the second embodiment.
  • the semiconductor device A26 differs from the semiconductor device A20 in the following points.
  • the second semiconductor element 22 of the semiconductor device A26 is not a transistor but a diode like the semiconductor device A16.
  • the first main surface electrode 211 (source electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are connected to each other via the first conductive part 31. , electrically connected. Further, the first back electrode 213 (drain electrode) of the first semiconductor element 21 and the second back electrode 223 (cathode electrode) of the second semiconductor element 22 are electrically connected via the second conductive part 32. ing. That is, in the semiconductor device A26, as shown in FIG. 43, a MOSFET and a diode are connected in parallel.
  • FIGS. 44 and 45 show a semiconductor device A27 according to a seventh modification of the second embodiment.
  • the semiconductor device A27 differs from the semiconductor device A20 in the following points. That is, each of the first semiconductor element 21 and the second semiconductor element 22 of the semiconductor device A27 is not a transistor but a diode like the semiconductor device A17.
  • the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are connected to each other via the first conductive part 31. , electrically connected. Further, the first back electrode 213 (cathode electrode) of the first semiconductor element 21 and the second back electrode 223 (cathode electrode) of the second semiconductor element 22 are electrically connected via the second conductive part 32. ing. That is, in the semiconductor device A27, as shown in FIG. 45, two diodes are connected in parallel.
  • each of the semiconductor devices A25 to A27 according to the fifth modification to the seventh modification of the second embodiment, two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) are integrated into one, similarly to the semiconductor device A20.
  • One package is made up of two sealing resins 50. Therefore, similarly to the semiconductor device A10, each of the semiconductor devices A25 to A27 can reduce the mounting area on the circuit board on which the semiconductor devices A25 to A27 are mounted.
  • each of the semiconductor devices A25 to A27 has the same configuration as the semiconductor device A20, and thus achieves the same effects as the semiconductor device A20.
  • the semiconductor device of the present disclosure has three types of circuits (a parallel circuit of two transistors, a transistor and a diode, and a parallel circuit of two diodes).
  • the configurations of each terminal lead 13, sealing resin 50, etc. are common to each semiconductor device A20, A25 to A27. Therefore, the semiconductor device of the present disclosure can configure any of three types of circuits while keeping the package appearance the same. Further, in the semiconductor device of the present disclosure, even if each of the first semiconductor element 21 and the second semiconductor element 22 is a transistor or a diode, the configuration of each terminal lead 13 and the sealing resin 50 can be maintained as is. Can be used. As a result, the semiconductor device of the present disclosure can use a common package structure for any of the three types of circuits described above, which is preferable for improving productivity.
  • FIG. 46 shows a semiconductor device A30 according to the third embodiment.
  • the semiconductor device A30 differs from the semiconductor device A10 in the following points. That is, the size of the first semiconductor element 21 of the semiconductor device A30 in plan view is smaller than the size of the first semiconductor element 21 of the semiconductor device A10 in plan view. Further, the size of the second semiconductor element 22 of the semiconductor device A30 in plan view is smaller than the size of the second semiconductor element 22 of the semiconductor device A10 in plan view.
  • the size of the first semiconductor element 21 in plan view is reduced compared to the semiconductor device A10, the size of the first joint portion 311 of the first conductive portion 31 in plan view is reduced.
  • the area of the first joint portion 311 in plan view is equal to the area of the first main surface electrode 211 in plan view. For example, it is 10% or more and 100% or less.
  • the planar view size of the second semiconductor element 22 is reduced compared to the semiconductor device A10, the planar view size of the second joint portion 312 of the first conductive portion 31 is reduced. It has been downsized.
  • the area of the second joint portion 312 in plan view (the sum of the areas of the two strip portions 312a) is equal to the area of the second main surface electrode 221 in plan view. For example, it is 10% or more and 100% or less.
  • the width of the first connecting portion 314 of the first conductive portion 31 is the same as that of the semiconductor device A10.
  • FIG. 47 shows a semiconductor device A31 according to a modification of the third embodiment.
  • the semiconductor device A31 differs from the semiconductor device A10 in the following points.
  • the size of the first semiconductor element 21 of the semiconductor device A31 in plan view is larger than the size of the first semiconductor element 21 of the semiconductor device A10 in plan view.
  • the size of the second semiconductor element 22 of the semiconductor device A31 in plan view is larger than the size of the second semiconductor element 22 of the semiconductor device A10 in plan view.
  • the size of the first semiconductor element 21 in plan view is enlarged compared to the semiconductor device A10, so the size of the first joint portion 311 of the first conductive portion 31 in plan view is enlarged.
  • the area of the first joint portion 311 in plan view is equal to the area of the first main surface electrode 211 in plan view. For example, it is 10% or more and 100% or less.
  • the planar view size of the second semiconductor element 22 is enlarged compared to the semiconductor device A10, the planar view size of the second joint portion 312 of the first conductive portion 31 is increased.
  • the area of the second joint portion 312 in plan view (the sum of the areas of the two strip portions 312a) is equal to the area of the second main surface electrode 221 in plan view. For example, it is 10% or more and 100% or less.
  • the width of the first connecting portion 314 of the first conductive portion 31 is the same as that of the semiconductor device A10.
  • each of the semiconductor devices A30 and A31 according to the third embodiment and its modification, two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) are formed by one sealing resin 50, similarly to the semiconductor device A10. It is packaged in one. Therefore, similarly to the semiconductor device A10, each of the semiconductor devices A30 and A31 can reduce the mounting area on the circuit board on which the semiconductor devices A30 and A31 are mounted. In addition, each of the semiconductor devices A30 and A31 has the same configuration as the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10.
  • the area of the first joint portion 311 in plan view (the sum of the areas of the two strip portions 311a) is For example, it is 10% or more and 100% or less of the area of the first main surface electrode 211. According to this configuration, the size of the first joint portion 311 in plan view can be made appropriate depending on the size of the first semiconductor element 21 in plan view.
  • the area of the second joint portion 312 in plan view (the sum of the areas of the two strip portions 312a) is, for example, 10% of the area of the second main surface electrode 221 in plan view. 100% or less. According to this configuration, the size of the second joint portion 312 in plan view can be made to be an appropriate size according to the size of the second semiconductor element 22 in plan view.
  • the first conductive portion 31 As understood from the semiconductor devices A10, A30, and A31, in the semiconductor device of the present disclosure, even if the first semiconductor element 21 and the second semiconductor element 22 have different sizes in plan view, the first conductive portion 31 The first connecting portions 314 of the two have the same width.
  • the first conductive part 31 may be transported while being held by a transporting hand or the like.
  • the first connecting part 314 is sandwiched in the width direction of the first connecting part 314, adjustment of the conveying hand or the like becomes unnecessary. Therefore, even if the first semiconductor element 21 and the second semiconductor element 22 have different sizes in plan view, it is possible to use a common conveyance device such as a conveyance hand, which is preferable for improving productivity.
  • the first semiconductor element 21 and the second semiconductor element 22 have different sizes in plan view in the semiconductor device A10, but in the semiconductor device A20, the first semiconductor element 21 and the second semiconductor element 22 in plan view size may be changed.
  • FIG. 48 shows a semiconductor device A40 according to the fourth embodiment.
  • the semiconductor device A40 differs from the semiconductor device A10 in the following points. That is, it includes a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. In the example shown in FIG. 48, the semiconductor device A40 includes two first semiconductor elements 21 and two second semiconductor elements 22, but the number of each of the first semiconductor elements 21 and the second semiconductor elements 22 is three or more. It may be.
  • Each of the two first semiconductor elements 21 is mounted on the first die pad 10A.
  • Each of the two first semiconductor elements 21 is, for example, a transistor.
  • the two first semiconductor elements 21 are lined up along the second direction y.
  • the centers of gravity of the two first semiconductor elements 21 overlap the center of the first die pad 10A in plan view.
  • the two first semiconductor elements 21 have the same size in plan view, but may be different from each other.
  • Each of the two second semiconductor elements 22 is mounted on the second die pad 10B.
  • Each of the two second semiconductor elements 22 is, for example, a transistor.
  • the two second semiconductor elements 22 are lined up along the second direction y.
  • the centers of gravity of the two second semiconductor elements 22 overlap the center of the second die pad 10B in plan view.
  • the two second semiconductor elements 22 have the same planar size, but may be different from each other.
  • the semiconductor device A40 includes two first semiconductor elements 21 and two second semiconductor elements 22, it also differs from the semiconductor device A10 in the following points.
  • the first conductive portion 31 of the semiconductor device A30 includes two first joint portions 311, two second joint portions 312, a third joint portion 313, two first connection portions 314, and two second connection portions. This point includes a section 315.
  • the first connecting member 41A of the semiconductor device A40 covers the main surface electrode 212 of one first semiconductor element 21, the main surface electrode 212 of the other first semiconductor element 21, and the fourth terminal lead 171. This is the point where it is joined to the portion 171A.
  • the first connecting member 41A is joined to the main surface electrode 212 of the first semiconductor element 21 on the side closer to the plurality of terminal leads 13 in the second direction y, of the two first semiconductor elements 21, for example by stitch joining. ing.
  • the second connection member 42A of the semiconductor device A40 connects the first main surface electrode 211 of one first semiconductor element 21, the first main surface electrode 211 of the other first semiconductor element 21, and the sixth terminal. This is the point where it is joined to the covering portion 181A of the lead 181.
  • the second connecting member 42A is connected to the first main surface electrode 211 of the first semiconductor element 21 on the side closer to the plurality of terminal leads 13 in the second direction y, of the two first semiconductor elements 21, for example by stitch bonding. It is joined.
  • the first connecting member 41A and the second connecting member 42A are formed first, but on the contrary, the second connecting member 42A may be formed first.
  • the first connection member 41B of the semiconductor device A40 covers the main surface electrode 222 of the other second semiconductor element 22, the main surface electrode 222 of the other second semiconductor element 22, and the fifth terminal lead 172. 172A.
  • the first connecting member 41B is joined to the main surface electrode 222 of the second semiconductor element 22 on the side closer to the plurality of terminal leads 13 in the second direction y, of the two second semiconductor elements 22, for example by stitch joining. ing.
  • the second connection member 42B of the semiconductor device A40 connects the second main surface electrode 221 of one second semiconductor element 22, the second main surface electrode 221 of the other second semiconductor element 22, and the seventh terminal. This is the point where it is joined to the covering portion 182A of the lead 182.
  • the second connecting member 42B is connected to the second main surface electrode 221 of the second semiconductor element 22 on the side closer to the plurality of terminal leads 13 in the second direction y, of the two second semiconductor elements 22, for example by stitch bonding. It is joined. Note that in the semiconductor device A40, the first connecting member 41B and the second connecting member 42B are formed first, but on the contrary, the second connecting member 42B may be formed first.
  • the first conductive portion 31 of the semiconductor device A40 includes two first bonding portions 311, two second bonding portions 312, a third bonding portion 313, and two first connecting portions, as shown in FIG. 314 and two second connecting portions 315 .
  • the two first bonding parts 311 are individually bonded to the first main surface electrodes 211 of the two first semiconductor elements 21 .
  • the two second bonding portions 312 are individually bonded to the second main surface electrodes 221 of the two second semiconductor elements 22 .
  • One of the two first connecting parts 314 is connected to one of the two first joining parts 311 and one of the two second joining parts 312.
  • the other of the two first connecting parts 314 is connected to the other of the two first joining parts 311 and the other of the two second joining parts 312.
  • One of the two second connecting parts 315 is connected to each of the two first connecting parts 314.
  • the other of the two second connecting parts 315 is connected to one of the two first connecting parts 314 and the third joint part 313.
  • the semiconductor device A40 may be configured as follows. That is, the semiconductor device A40 includes two first connection members 41A, and one of the first connection members 41A connects to the main surface electrode 212 of one of the first semiconductor elements 21 and the covering portion 171A of the fourth terminal lead 171. The other first connecting member 41A may be joined to the main surface electrode 212 of the other first semiconductor element 21 and the covering portion 171A of the fourth terminal lead 171. Similarly, the semiconductor device A40 includes two second connection members 42A, and one of the second connection members 42A connects the first main surface electrode 211 of the first semiconductor element 21 and the covering portion of the sixth terminal lead 181.
  • the semiconductor device A40 includes two first connection members 41B, and one of the first connection members 41B is connected to the main surface electrode 222 of one of the second semiconductor elements 22 and the covering portion 172A of the fifth terminal lead 172.
  • the other first connecting member 41B may be joined to the main surface electrode 222 of the other second semiconductor element 22 and the covering portion 172A of the fifth terminal lead 172.
  • the semiconductor device A40 includes two second connection members 42B, and one of the second connection members 42B connects the second main surface electrode 221 of one of the second semiconductor elements 22 and the covering portion 182A of the seventh terminal lead 182.
  • the other second connecting member 42B may be joined to the second main surface electrode 221 of the other second semiconductor element 22 and the covering portion 182A of the seventh terminal lead 182.
  • FIG. 49 shows a semiconductor device A41 according to a modification of the fourth embodiment.
  • the semiconductor device A41 differs from the semiconductor device A40 in the following points. The point is that the second conductive portion 32 is further provided.
  • the semiconductor device A41 corresponds to a configuration in which a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22 are provided in the semiconductor device A20.
  • the semiconductor device A41 includes two first semiconductor elements 21 and two second semiconductor elements 22, but the number of each of the first semiconductor elements 21 and the second semiconductor elements 22 is 3. There may be more than one.
  • each of the semiconductor devices A40 and A41 according to the fourth embodiment and its modification, two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) are formed by one sealing resin 50, similarly to the semiconductor device A10. It is packaged in one. Therefore, similarly to the semiconductor device A10, each of the semiconductor devices A40 and A41 can reduce the mounting area on the circuit board on which the semiconductor devices A40 and A41 are mounted. In addition, each of the semiconductor devices A40 and A41 has a configuration common to that of the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10.
  • the semiconductor device of the present disclosure can share a package structure regardless of the number of first semiconductor elements 21 and second semiconductor elements 22, which is preferable for improving productivity.
  • the two first semiconductor elements 21 are both transistors, but the present invention is not limited to this, and one of the two first semiconductor elements 21 may be a transistor and the other may be a diode. There may be.
  • the diodes are connected antiparallel to the transistors.
  • the antiparallel arrangement in an example where the transistor is a MOSFET, a drain electrode and a cathode electrode are connected, and a source electrode and an anode electrode are connected.
  • one of the two second semiconductor elements 22 may be a transistor and the other may be a diode.
  • the types of the first semiconductor element 21 and the second semiconductor element 22 are (Whether it is a transistor or a diode), size in plan view, number, etc., by simply changing the first conductive part 31 and the second conductive part 32, the first die pad 10A, the second die pad 10B, It is possible to share the terminal leads 13 and the sealing resin 50.
  • the first conductive portion 31 is a metal plate material (metal clip), but the semiconductor device of the present disclosure
  • the configuration is not limited to this.
  • the first conductive portion 31 includes one or more bonding wires, and the one or more bonding wires connect the first main surface electrode 211 of the first semiconductor element 21 and the second main surface electrode of the second semiconductor element 22.
  • the surface electrode 221 and the first terminal lead 14 may be electrically connected to each other.
  • the semiconductor device of the present disclosure does not include the first conductive portion 31. It's okay.
  • the covering portion 14A of the first terminal lead 14 may be expanded and the covering portion 14A may be directly connected to each of the first main surface electrode 211 and the second main surface electrode 221. good.
  • the package structure of the semiconductor device of the present disclosure is not limited to those exemplified in the first embodiment to the fourth embodiment (including variations thereof).
  • the semiconductor device of the present disclosure can also be applied to other TO (Transistor Outline) packages.
  • each of the semiconductor devices A10, A20, A30, and A40 according to the first to fourth embodiments is an expanded package structure called TO-247, but TO-220, TO-252 , TO263, etc. may be an extension of other package structures.
  • the semiconductor device of the present disclosure can package a plurality of semiconductor elements (first semiconductor element 21 and second semiconductor element 22) with one sealing resin 50 while maintaining an appearance similar to a conventional TO package. enable.
  • the semiconductor device according to the present disclosure is not limited to the embodiments described above.
  • the specific configuration of each part of the semiconductor device of the present disclosure can be modified in various ways.
  • the semiconductor device of the present disclosure includes embodiments related to the following additional notes. Additional note 1. a first semiconductor element having a first main surface facing one side in the thickness direction and a first main surface electrode disposed on the first main surface; a second semiconductor element having a second main surface facing in the same direction as the first main surface and a second main surface electrode disposed on the second main surface; a first die pad on which the first semiconductor element is mounted; a second die pad arranged on one side of the first die pad in a first direction perpendicular to the thickness direction, and on which the second semiconductor element is mounted; a first terminal lead spaced apart from the first die pad and the second die pad; a sealing resin that covers the first semiconductor element and the second semiconductor element; Equipped with In the semiconductor device, the first main surface electrode and the second main surface electrode are electrically connected to the first terminal lead inside the sealing resin.
  • Appendix 2 a second terminal lead extending from the first die pad in the thickness direction and a second direction perpendicular to the first direction; further comprising a third terminal lead extending from the second die pad in the second direction, The semiconductor device according to appendix 1, wherein the first terminal lead, the second terminal lead, and the third terminal lead are arranged in the first direction. Appendix 3. The semiconductor device according to appendix 2, wherein the first terminal lead is located between the second terminal lead and the third terminal lead in the first direction. Appendix 4. The semiconductor device according to appendix 3, further comprising a first conductive portion that is electrically connected to the first main surface electrode, the second main surface electrode, and the first terminal lead. Appendix 5.
  • the first conductive part includes a first joint part conductively joined to the first main surface electrode, a second joint part conductively joined to the second main surface electrode, and a second joint part electrically connected to the first terminal lead.
  • the semiconductor device according to appendix 4 comprising: a third junction.
  • the first conductive portion is symmetrical with respect to an axis extending in the second direction when viewed in the thickness direction, The semiconductor device according to appendix 5, wherein the axis overlaps the third junction.
  • the first conductive portion includes a first connecting portion that connects the first connecting portion and the second connecting portion, and a second connecting portion that connects the first connecting portion and the third connecting portion.
  • the semiconductor device according to appendix 7, wherein a center of gravity of the first conductive portion overlaps the first conductive portion when viewed in the thickness direction.
  • the first connecting portion extends along the first direction between the first joint portion and the second joint portion when viewed in the thickness direction,
  • the semiconductor device according to appendix 8, wherein the second connecting portion extends along the second direction between the first connecting portion and the third bonding portion when viewed in the thickness direction.
  • the sealing resin has a resin main surface facing in the same direction as the first main surface, and at least one recess depressed from the resin main surface,
  • the semiconductor device according to any one of attachments 4 to 9, wherein each of the at least one recess overlaps either the first die pad or the second die pad when viewed in the thickness direction.
  • Appendix 11 The semiconductor device according to appendix 10, wherein each of the at least one recessed portion does not overlap any of the first conductive portions when viewed in the thickness direction.
  • the first semiconductor element has a first back surface facing opposite to the first main surface in the thickness direction and a first back electrode disposed on the first back surface
  • the second semiconductor element has a second back surface facing opposite to the second main surface in the thickness direction and a second back electrode disposed on the second back surface, the first back electrode is electrically connected to the first die pad;
  • the semiconductor device according to appendix 12 further comprising a second conductive portion joined to the first die pad and the second die pad,
  • the first die pad has a first mounting surface facing the same direction as the first main surface electrode
  • the second die pad has a second mounting surface facing the same direction as the second main surface electrode
  • the semiconductor device according to attachment 13 wherein the second conductive portion is joined to the first mounting surface and the second mounting surface.
  • Appendix 15 The semiconductor device according to appendix 14, wherein the second conductive portion overlaps a line segment connecting the first semiconductor element and the second semiconductor element when viewed in the thickness direction. Appendix 16.
  • the semiconductor device according to any one of Supplementary notes 2 to 15.
  • Appendix 17 The semiconductor device according to any one of appendices 1 to 16, wherein the center of gravity of the first semiconductor element overlaps the center of the first die pad when viewed in the thickness direction.
  • Appendix 18 The semiconductor device according to any one of appendices 1 to 17, wherein the center of gravity of the second semiconductor element overlaps the center of the second die pad when viewed in the thickness direction.
  • Appendix 19 The first semiconductor element is either a transistor or a diode

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008166461A (ja) * 2006-12-28 2008-07-17 Hitachi Ltd 双方向スイッチモジュール
JP2009130055A (ja) * 2007-11-21 2009-06-11 Rohm Co Ltd 半導体装置
WO2021261508A1 (ja) * 2020-06-23 2021-12-30 ローム株式会社 半導体装置
WO2022025041A1 (ja) * 2020-07-28 2022-02-03 ローム株式会社 半導体装置
JP2022025587A (ja) * 2020-07-29 2022-02-10 ローム株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008166461A (ja) * 2006-12-28 2008-07-17 Hitachi Ltd 双方向スイッチモジュール
JP2009130055A (ja) * 2007-11-21 2009-06-11 Rohm Co Ltd 半導体装置
WO2021261508A1 (ja) * 2020-06-23 2021-12-30 ローム株式会社 半導体装置
WO2022025041A1 (ja) * 2020-07-28 2022-02-03 ローム株式会社 半導体装置
JP2022025587A (ja) * 2020-07-29 2022-02-10 ローム株式会社 半導体装置

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