WO2024004501A1 - Dispositif de formation de film, procédé de formation de film et procédé de fabrication d'un dispositif électronique - Google Patents

Dispositif de formation de film, procédé de formation de film et procédé de fabrication d'un dispositif électronique Download PDF

Info

Publication number
WO2024004501A1
WO2024004501A1 PCT/JP2023/020409 JP2023020409W WO2024004501A1 WO 2024004501 A1 WO2024004501 A1 WO 2024004501A1 JP 2023020409 W JP2023020409 W JP 2023020409W WO 2024004501 A1 WO2024004501 A1 WO 2024004501A1
Authority
WO
WIPO (PCT)
Prior art keywords
film forming
film
substrate
forming step
mask
Prior art date
Application number
PCT/JP2023/020409
Other languages
English (en)
Japanese (ja)
Inventor
章裕 濱野
行生 松本
由季 菅原
Original Assignee
キヤノントッキ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by キヤノントッキ株式会社 filed Critical キヤノントッキ株式会社
Publication of WO2024004501A1 publication Critical patent/WO2024004501A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/20—Metallic electrodes, e.g. using a stack of layers

Definitions

  • the present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method.
  • Patent Document 1 discloses a film forming apparatus that performs film forming in-line.
  • a plurality of connected vacuum chambers constitute one production line.
  • An object of the present invention is to provide a technique for suppressing the increase in size of an apparatus used for film formation.
  • a first film forming step of forming a first film made of an organic material on the substrate using a mask There is provided a film forming method comprising: a second film forming step of forming a second film made of an inorganic material on the substrate using the same mask as in the first film forming step.
  • FIG. 1 is a schematic diagram showing the configuration of a film forming apparatus according to an embodiment.
  • FIG. 1 is a diagram schematically showing a cross-sectional structure of a substrate according to an embodiment.
  • FIG. 1 is a diagram schematically showing a cross-sectional structure of a substrate according to an embodiment.
  • 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a planar structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • the X direction and the Y direction indicate the horizontal direction
  • the Z direction indicates the vertical direction.
  • some reference numerals may be omitted when a plurality of the same elements are shown.
  • FIG. 1 is a schematic diagram showing the configuration of a film forming apparatus 1 according to one embodiment.
  • the film forming apparatus 1 is an apparatus that forms a film on a substrate 100.
  • the substrates 100 are sequentially transported to the film forming block 301, and a film is formed on the substrates 100.
  • Such a film forming apparatus is used, for example, to manufacture each element of an organic EL display device.
  • such a film forming apparatus is used for surface treatments such as painting and forming a protective layer.
  • the film forming block 301 includes a plurality of processing chambers 303a to 303d in which the substrate 100 is processed, and a mask storage chamber in which masks before and after use are stored, surrounding a transfer chamber 302 having an octagonal shape in plan view. 305 are arranged.
  • a transport robot 302a that transports the substrate 100 is arranged in the transport chamber 302.
  • the transfer robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that moves the hand in the horizontal direction.
  • the film-forming block 301 is a cluster-type film-forming unit in which a plurality of processing chambers 303a to 303d are arranged to surround a transport robot 302a.
  • Each of the processing chambers 303a to 303d performs predetermined processing on the substrate. Note that in the following description, the processing chambers 303a to 303d may be referred to as processing chambers 303 unless otherwise distinguished.
  • processing chambers 303 one or more types of processing are performed on the substrate. Processes performed in the processing chamber 303 include alignment of a substrate and a mask, deposition of an evaporation material onto the substrate via a mask, etching of the substrate, cleaning of the substrate, application of liquid to the substrate, and measurement of the substrate.
  • a buffer chamber 306, a rotation chamber 307, and a delivery chamber 308 are arranged on the upstream and downstream sides of the film forming block 301 in the transport direction (arrow direction) of the substrate 100, respectively. During the manufacturing process, each chamber is maintained in a vacuum state.
  • the film-forming apparatus 1 has a plurality of film-forming blocks 301, and the plurality of film-forming blocks 301 are It has a configuration in which a buffer chamber 306, a turning chamber 307, and a delivery chamber 308 are connected by a connecting device. Note that the configuration of the coupling device is not limited to this, and may include only the buffer chamber 306 or the delivery chamber 308, for example.
  • the transfer robot 302a carries the substrate 100 from the upstream delivery chamber 308 to the transfer chamber 302, transfers the substrate 100 between the processing chambers 303, transfers the mask between the mask storage chamber 305 and the processing chamber 303, Then, the substrate 100 is carried out from the transfer chamber 302 to the buffer chamber 306 on the downstream side.
  • the buffer chamber 306 is a chamber for temporarily storing the substrate 100 depending on the operating status of the film forming apparatus 1.
  • the buffer chamber 306 includes a multi-tiered substrate storage shelf (also called a cassette) that can store a plurality of substrates 100 while maintaining a horizontal state with the processing surface (film formation surface) of the substrate 100 facing downward in the direction of gravity. and an elevating mechanism for elevating and lowering the substrate storage shelf in order to align the stage for loading or unloading the substrates 100 with the transport position. Thereby, a plurality of substrates 100 can be temporarily accommodated and retained in the buffer chamber 306.
  • the turning chamber 307 is equipped with a device for changing the orientation of the substrate 100.
  • the rotation chamber 307 rotates the orientation of the substrate 100 by 180 degrees by a transfer robot 307a provided in the rotation chamber 307.
  • the transfer robot 307a provided in the rotation chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and transfers it to the transfer chamber 308, thereby transferring the substrate 100 between the buffer chamber 306 and the transfer chamber 308.
  • the front end and rear end in the conveyance direction (arrow direction) are interchanged.
  • the direction when carrying the substrate 100 into the film forming chamber 303 is the same in each film forming block 301, so that the scanning direction of film forming with respect to the substrate 100 and the direction of the mask are the same in each film forming block 301.
  • the directions in which the masks are installed in the mask storage chambers 305 in each film forming block 301 can be aligned, and the management of the masks can be simplified and usability can be improved.
  • the transfer chamber 308 is a chamber for transferring the substrate 100 carried in by the transfer robot 307a of the rotation chamber 307 to the transfer robot 302a of the downstream film forming block 301. If necessary, the thickness of the film formed on the substrate 100 may be measured in the delivery chamber 308. That is, the delivery room 308 may be an inspection room for inspecting the film formed on the substrate 100.
  • the control system of the film forming apparatus 1 includes a host computer 300 that controls the entire line, and control devices 309, 310, 311, 313a to 313d that control each component, and these are connected by wired or wireless communication. Communication is possible via line 300a.
  • the control devices 313a to 313d are provided corresponding to the film forming chambers 303a to 303d, and control the film forming apparatus 1, which will be described later.
  • a control device 309 controls the transfer robot 302a.
  • a control device 310 controls a transfer robot provided in a turning room 307.
  • the control device 311 controls equipment that performs alignment and film thickness measurement in the delivery room 308.
  • the host device 300 transmits information regarding the substrate 100 and instructions such as transport timing to each of the control devices 309, 310, 311, 313a to 313d, and each of the control devices 309, 310, 311, 313a to 313d performs operations based on the received instructions. Control each component.
  • Step S2a in FIG. 2 shows a step of arranging the substrate 100 and the mask 102 in the processing chamber 303.
  • the mask 102 is placed facing the substrate 100 along the film-forming surface of the substrate 100 .
  • alignment may be performed to adjust the positions of the substrate 100 and the mask 102. Alignment is not performed when there is no restriction on the film formation position on the substrate.
  • Steps S2b to S2c in FIG. 2 show steps of forming a film on the substrate 100 through the mask 102 in the processing chamber 303.
  • Mask 102 has an opening.
  • a film is formed on the substrate by the material forming the film passing through the opening of the mask 102 and being attached or deposited on the substrate. Examples of methods used include vapor deposition, sputtering, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), ADL (Atomic Layer Deposition), and liquid coating such as an inkjet method.
  • a film 110 is formed on the substrate 100.
  • the film 110 is a film made of an organic material.
  • a film 112 is formed on the substrate 100.
  • the membrane 112 is a membrane made of an inorganic material. A typical inorganic material is metal.
  • the mask 102 used when forming the film 110 is also used when forming the film 112. That is, film 110 and film 112 are formed on a substrate through a common mask 102.
  • the film forming apparatus preferably includes a plurality of film forming sources of different materials in one chamber.
  • a plurality of film forming sources of different materials for example, in the case of a vapor deposition apparatus, both an organic material evaporation source and a metal material evaporation source may be provided in one chamber.
  • a configuration may also be adopted in which the substrate 100 and the mask 102 are transported to a plurality of chambers while being overlapped.
  • a configuration in which both an organic film forming source and a metal film forming source are arranged in one line can be adopted.
  • the relative positions of the substrate 100 and the mask are fixed from step S2b to step S2c in FIG.
  • the positions of the substrate 100 and the mask 102 may be adjusted between the end of step S2b and the start of step S2c. By doing so, the film 110 and the film 112 can be formed at different positions on the substrate 100.
  • the order of film formation may be changed, first forming the film 112 made of an inorganic material, and then forming the film 110 made of an organic material.
  • a plurality of films of different types are formed on the substrate using a single mask. According to such a configuration, it is possible to suppress the increase in size of the apparatus compared to the case where a production line is configured for each type of film. Note that even when using the film forming method of this embodiment, a plurality of production lines may be configured as necessary.
  • FIG. 3 Another film forming method of this embodiment will be explained using FIG. 3.
  • parts similar to those in FIG. 2 are designated by the same reference numerals as in FIG. 2, and redundant explanations will be omitted as appropriate.
  • steps S3a to S3b in FIG. 3 are the same as the steps shown in steps S2a to S2b in FIG. Therefore, the explanation will be omitted.
  • a film 114 is formed on the substrate 100.
  • the membrane 114 is a membrane made of an inorganic material.
  • the film 110 and the film 114 are formed using a common mask, but they are formed at different positions on the substrate 100. Specifically, the film 114 is not formed in at least a part of the region where the film 110 is formed, or at least a part of the film 114 is formed in a region where the film 110 is not formed, or both. It is. According to such a configuration, the step of adjusting the position of the substrate 100 and the mask 102 can be omitted between two film forming steps. Therefore, the process can be simplified.
  • Film 110 is formed using one of evaporation, sputtering, CVD, PVD, ADL, or liquid coating, while film 114 is formed using another method. These methods differ in the extent to which the mask 102 wraps around the opening. Therefore, by using two arbitrary different film forming methods, the film 110 and the film 114 are formed at different positions on the substrate 100 even if they are formed using a common mask. Note that film forming methods other than those described above may be used.
  • the material adheres and accumulates in approximately the same area as the area projected by the opening using a method that allows the material to advance in a straight line.
  • the straightness of the material is low, the material is easily diffused, so that a film is formed that extends outside the area projected by the opening.
  • the film 110 when forming the film 114 over a wider area than the film 110, the film 110 can be formed by vapor deposition, and the film 114 can be formed by sputtering. In film formation by sputtering, material wraparound tends to be larger than in vapor deposition. Therefore, the film 114 can be formed over a wider area than the film 110.
  • the film 110 can be formed by vapor deposition, and the film 114 can be formed by CVD. In film formation by CVD, material wraparound tends to be larger than in vapor deposition.
  • film 110 can be formed by evaporation and film 114 can be formed by ADL.
  • vapor deposition is exemplified as a method with high straightness of material.
  • the straightness of the material is relative, and a film formation method other than vapor deposition may be used to form the film 110.
  • the material of the film 110 that is deposited first tends to enter the space between the substrate 100 and the mask 102, so the film 110 and the film 114 are separated from each other on the substrate 100. formed in different locations.
  • Parameters include the pressure within the chamber, the substrate temperature, the temperature surrounding the substrate, and the amount of material released.
  • the pressure degree of vacuum of the vacuum chamber
  • the higher the pressure in the chamber in other words, the lower the degree of vacuum, the smaller the mean free path of the material in the gaseous state. In other words, the material becomes easier to diffuse. Therefore, by performing vapor deposition at a higher pressure, it is possible to form a film over a wider range.
  • the film 110 is formed by vapor deposition in a chamber with a pressure of about 10-5 Pa
  • the film 114 is formed by vapor deposition in a chamber with a pressure of about 10-3 Pa
  • the film 114 is formed in a wider area than the film 110. be done. Note that which of the film 110 and the film 114 should be formed over a relatively wide range is appropriately selected depending on the purpose of film formation.
  • the formation of the film 110 and the formation of the film 114 may be performed using different film formation methods and under different conditions.
  • the film 110 is formed by vapor deposition in a chamber with a pressure of about 10-5 Pa, and the film 110 is formed by sputtering in a chamber with a pressure of about 10-1 Pa.
  • the film 114 can be formed over a wider area.
  • the degree of material diffusion differs depending on the temperature inside the chamber. Therefore, by performing film formation at different temperatures, the film 110 and the film 114 can be formed in different regions. The film 110 and the film 114 can be formed in different regions by performing film formation while changing the conditions for other parameters as appropriate.
  • the film 110 and the film 114 can be formed by using materials with different mean free paths. They can be formed in different areas. By using a material with a large molecular weight, the mean free path can be lowered. For example, if it is desired to form the metal film 114 over a wider area, it is better to use a material with a higher atomic number, such as silver or gold, than aluminum or magnesium.
  • the film 114 is formed over a wider area than the film 110.
  • the film 114 can be formed in a narrower area than the film 110.
  • the film 110 and the film 114 are formed through a common mask, but they are formed at different positions on the substrate 100. With such a configuration, it is possible to support the formation of films for more applications.
  • This embodiment is a film forming method applied to manufacturing a light emitting element mounted in an organic EL display device or the like. Note that the film-forming method described below can also be applied to film-forming applications other than manufacturing light-emitting elements.
  • Steps S4a to S4d in FIG. 4 all schematically show the cross-sectional structure of a light emitting element.
  • the reference numeral for each part of the light emitting element is assigned when the part is first shown in a drawing, and may be omitted from subsequent drawings.
  • Step S4a in FIG. 4 shows the substrate 100, as well as the anode electrode 401, cathode contact 403, and bank 405 formed on the substrate 100.
  • the substrate 100 is a glass substrate on which a TFT (Thin Film Transistor) is formed.
  • the substrate 100 may be a silicon wafer on which semiconductor elements are formed.
  • the substrate 100 is simplified in the figure, a plurality of films and elements are formed on the substrate 100 in a previous process.
  • Both the anode electrode 401 and the cathode contact 403 are made of a metal material such as tungsten or aluminum. When the anode electrode 401 and the cathode contact 403 are made of the same material, they can be formed in the same patterning process.
  • the material of the anode electrode 401 and the material of the cathode contact 403 may be different.
  • the cathode contact 403 will be connected to the cathode electrode in a later step.
  • One or more layers of an organic film (a film made of an organic material) including a light emitting layer is formed between the anode electrode 401 and the cathode electrode. With such a configuration, a current is injected into the light emitting layer, and the light emitting material in the light emitting layer can emit light.
  • the bank 403 electrically insulates the light emitting elements or the anode electrode 401 and cathode electrode of the light emitting elements.
  • step S4b of FIG. 4 the mask 102 is superimposed on the substrate 100.
  • alignment between the substrate 100 and the mask 102 is performed at this time.
  • alignment between substrate 100 and mask 102 is performed.
  • alignment is not required.
  • a light emitting layer 407 is formed on the substrate 100 via the mask 102.
  • the light emitting layer 407 is an organic film.
  • the light emitting layer 407 includes a host material and a dopant material, both of which are made of known organic materials.
  • the light emitting layer 407 is formed by vapor deposition.
  • known film forming methods such as sputtering, CVD, and inkjet methods can be used.
  • the light emitting layer 407 is formed so as to be in contact with the anode electrode 401. On the other hand, the light emitting layer 407 is spaced apart from the cathode contact 403.
  • the film formation method and the conditions used therein are selected so that the light emitting layer 407 is formed at such a position.
  • a lower pressure higher degree of vacuum
  • the light-emitting layer 407 can be formed in a region where the shape of the opening of the mask 102 is projected.
  • the vapor deposition material wraps around between the mask 102 and the substrate 100, the light emitting layer 407 may be formed outside the projection of the opening of the mask 102.
  • a possible countermeasure against such wraparound of the vapor deposition material is to increase the width of the bank 405.
  • one or more organic layers may be formed separately from the light-emitting layer 407, if necessary.
  • an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, etc. are formed. These layers, like the light-emitting layer 102, are formed by vapor deposition through the mask 102.
  • a cathode electrode 409 is formed on the substrate 100 via the mask 102.
  • Cathode electrode 409 is a metal film.
  • the cathode electrode 409 is made of magnesium, silver, gold, aluminum, tantalum, tungsten, molybdenum, nickel, or an alloy containing at least one of these.
  • the cathode electrode 409 is also formed outside the area projected from the opening of the mask 102. Specifically, the cathode electrode 409 is first formed at a position covering the light emitting layer 407. The cathode electrode 409 extends so as to be in contact with the cathode contact 403.
  • the cathode contact 403 is located outside the area projected from the opening of the mask 102.
  • the cathode electrode 409 can be connected to the cathode contact 403 by forming the cathode electrode 409 at a position different from that of the light emitting layer 407 while using the same mask 102 as the light emitting layer 407 .
  • cathode electrode 409 is formed on substrate 100 by vapor deposition. Then, the pressure inside the chamber during vapor deposition of the cathode electrode 409 is made higher than the pressure within the chamber during vapor deposition of the light emitting layer 407.
  • the light emitting layer 407 is formed by vapor deposition, while the cathode electrode 409 is formed by sputtering.
  • each material may be selected so that the mean free path of the material of the light emitting layer 407 is longer than the mean free path of the material of the cathode electrode 409 under the same conditions. When utilizing the difference in mean free path of materials, the film forming conditions in the two steps may be completely the same.
  • Throughput can be improved by not performing alignment between the step of forming the light emitting layer 407 and the step of forming the cathode electrode 409.
  • a process of changing the relative position between the substrate 100 and the mask 102 and an alignment process are required between the process of forming the light emitting layer 407 and the process of forming the cathode electrode 409. may be included in between.
  • the cathode electrode 409 is not formed on a part of the light emitting layer 407, it is effective to change the relative positions of the substrate 100 and the mask 102.
  • the structure of the light emitting element may be changed so that the cathode electrode 409 can be easily formed over a wider area.
  • 5A and 5B each schematically show a cross-sectional structure of a light emitting element.
  • the same parts as in FIG. 4 are denoted by the same symbols as in FIG. 4, or the symbols are omitted for the sake of simplification.
  • the height of the bank 405a between the anode electrode 401 and the cathode contact 403 is lower than the height of the other banks 405.
  • the degree of inhibition of material diffusion by the bank 405a is reduced, and the cathode electrode 409 can be formed over a wider range.
  • a structure may be adopted in which no bank is formed between the anode electrode 401 and the cathode contact 403.
  • a plurality of films of different types are formed on the substrate using a single mask. According to such a configuration, it is possible to suppress the increase in size of the apparatus compared to the case where a production line is configured for each type of film. Note that even when using the film forming method of this embodiment, a plurality of manufacturing lines may be configured as necessary.
  • This embodiment is a film forming method applied to manufacturing a light emitting element mounted in an organic EL display device or the like. Note that the film-forming method described below can also be applied to film-forming applications other than manufacturing light-emitting elements.
  • FIG. 6A schematically shows a cross-sectional structure of a light emitting element.
  • FIG. 6B schematically shows the planar structure of the light emitting element.
  • Components having the same functions as those in FIGS. 1 to 5B are given the same reference numerals as in those figures. Descriptions of parts having the same functions as those in FIGS. 1 to 5B may be omitted because they overlap with the previous description. That is, all the explanations related to Embodiments 1 and 2 are also applied to this embodiment.
  • the light emitting element of this embodiment includes a plurality of pixels that each emit light of a different wavelength.
  • the light emitting layer 407R emits red light
  • the light emitting layer 407G emits green light
  • the light emitting layer 407B emits blue light.
  • a so-called RGB display can be configured.
  • the light emitting element may further include pixels that emit white light.
  • the light emitting element may only include pixels of one color or two colors.
  • a passivation film 411 is formed to cover the bank 405 and the cathode electrode 409.
  • Passivation film 411 is made of silicon nitride. The passivation film protects these films by reducing the penetration of moisture into the organic layers and electrode layers formed thereunder, and by suppressing reactions to these films during the manufacturing process.
  • a resin layer 413 and a protective film 415 are formed on the passivation film 411.
  • the blue light emitting layer 407B has the largest area on a plane.
  • the green light emitting layer 407G has the second largest area.
  • the red light emitting layer 407R has the smallest area. The relationship between these areas can be changed as appropriate depending on the luminous efficiency of the luminescent layer 407 of each color.
  • the film forming method of this embodiment is different from Embodiments 1 and 2 in that a mask is formed using a photolithography method. Note that, in the subsequent drawings, for the sake of simplification, the reference numerals of the same parts as those shown in FIGS. 6A and 6B are appropriately omitted.
  • a passivation film 411 is formed on the substrate 100.
  • the passivation film 411 is formed by CVD.
  • the passivation film 411 covers the anode electrode 401, the cathode contact 403, and the bank 405. Passivation film 411 is formed over the entire surface of substrate 100.
  • step S7b in FIG. 7 a resist 701 for photolithography is applied to the substrate 100. After the resist is applied, drying and baking treatments are performed as necessary.
  • step S7c in FIG. 7 photolithography is performed to expose a portion of the resist 701 (photosensitive portion 701a). Since a positive resist 701 is used here, the photosensitive area 701a will be removed in a later development step. If a negative resist is used, the exposed areas and non-exposed areas may be replaced.
  • step S8a in FIG. 8 the exposed resist 701 is developed.
  • the photosensitive portion 701a is removed by development.
  • the portion of the resist 701 that is removed is the portion above the anode electrode 401 of one of the three color pixels.
  • the anode electrodes 401 of the other two pixels of the three colors remain covered with the resist 701 even after development. Further, the resist 701 after development covers the cathode contact 403.
  • step S8b of FIG. 8 the passivation film 411 is etched.
  • the resist 701 is used as a mask. That is, the portion of the passivation film 411 that is not covered with the resist 701 is removed by etching. This exposes the anode electrode 401. Furthermore, in this embodiment, a portion of the passivation film 411 covered with the resist 701 is removed by performing near-isotropic etching. As a result, after etching, the resist 701 protrudes from the passivation film 411 in the planar direction. As the resist 701 overhangs, the passivation film 411 exposes the cathode contact 403.
  • the cathode contact 403 is covered with the resist 701 but not covered with the passivation film 411.
  • the light emitting layer 407 and the cathode electrode 409 are formed using the resist 701 as a common mask, the light emitting layer 407 does not come into contact with the cathode contact 403, while the cathode electrode 409 It can be brought into contact with the cathode contact 403.
  • the passivation film 411 remains in a state covering the anode electrode 401 and cathode contact 403 of other pixels.
  • a light emitting layer 407 is formed.
  • the light emitting layer 407 is formed by vapor deposition.
  • resist 701 is used as a mask.
  • the film formation is not limited to vapor deposition, but may be performed by any method that allows the material to move in a relatively straight line with respect to the subsequent step of forming the cathode electrode 409.
  • the light emitting layer 407 is formed in approximately the same area as the projection of the opening of the resist 701.
  • a cathode electrode 409 is formed.
  • the cathode electrode 409 is formed by vapor deposition.
  • resist 701 is used as a mask.
  • the film formation is not limited to vapor deposition, but may be performed by any method that allows the material to have a higher diffusivity than the previous step of forming the light emitting layer 407.
  • the cathode electrode 409 is formed in a wider area than the projection of the opening of the resist 701. As a result, the cathode electrode 409 is also formed on the cathode contact 403.
  • the film forming method used for forming the light emitting layer 407 and forming the cathode electrode 409 all the methods described in Embodiment 2 are applied.
  • the cathode electrode 409 is formed by vapor deposition
  • the pressure in the chamber when the cathode electrode 409 is formed is higher than the pressure in the chamber when the light emitting layer 407 is formed.
  • CVD or sputtering may be used to form the cathode electrode 409.
  • the explanation has been made assuming that the resist 701 is used as a mask.
  • the outer edge of the cathode electrode 409 may be defined by the passivation film 411. Therefore, in step S9b of FIG. 9, the resist 701 and the passivation film 411 may be considered to be integrally used as a mask.
  • a passivation film 411a is formed by CVD.
  • the passivation film 411a is formed to cover the cathode electrode 409 formed in the previous step.
  • the passivation film 411a is preferably formed by the same method as the process of forming the passivation film 411 in step S7a of FIG.
  • the passivation film 411a formed in this step and the passivation film 411 formed in the previous step and remaining after etching will be collectively referred to as passivation film 411.
  • step S10b in FIG. 10 the resist 701 is peeled off from the substrate 100.
  • the light emitting layer 407 formed on the resist 701 and the cathode electrode 409 are lifted off.
  • the passivation film 411 is exposed on the surface of the substrate 100.
  • the portion of the passivation film 411 formed in the opening of the resist 701 may be a concave portion or a convex portion relative to other portions.
  • the surface shape may be different in this way, the substrate 100 that has completed step S10b in FIG. 10 is in the same state as the substrate 100 shown in step S7a in FIG. 7.
  • step S7b in FIG. 7 to step S10b in FIG. 10 are repeated for pixels of other colors. Repeated explanations will be omitted.
  • step S11a of FIG. 11 light emitting layers 407R, 407G, and 407B of each color and cathode electrodes (numerals are omitted) on each are formed. Furthermore, the cathode electrode of each pixel is covered with a passivation film 411.
  • a resin layer 413 is formed.
  • the resin layer 413 is formed for the purpose of planarization or the like.
  • the resin layer 413 is omitted as appropriate.
  • a protective film 415 (see FIGS. 6A and 6B) is formed.
  • a plurality of films of different types are formed on the substrate using a single mask. According to such a configuration, it is possible to suppress the increase in size of the apparatus compared to the case where a production line is configured for each type of film. Note that even when using the film forming method of this embodiment, a plurality of manufacturing lines may be configured as necessary.

Abstract

Dans un mode de réalisation, ce procédé de formation de film comprend une première étape de formation de film pour former un premier film formé à partir d'un matériau organique sur un substrat à l'aide d'un masque et une seconde étape de formation de film pour former un second film formé à partir d'un matériau inorganique sur le substrat à l'aide du même masque que celui qui est utilisé dans la première étape de formation de film.
PCT/JP2023/020409 2022-07-01 2023-06-01 Dispositif de formation de film, procédé de formation de film et procédé de fabrication d'un dispositif électronique WO2024004501A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022107339A JP2024006462A (ja) 2022-07-01 2022-07-01 成膜装置、成膜方法、及び電子デバイスの製造方法
JP2022-107339 2022-07-01

Publications (1)

Publication Number Publication Date
WO2024004501A1 true WO2024004501A1 (fr) 2024-01-04

Family

ID=89382662

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/020409 WO2024004501A1 (fr) 2022-07-01 2023-06-01 Dispositif de formation de film, procédé de formation de film et procédé de fabrication d'un dispositif électronique

Country Status (2)

Country Link
JP (1) JP2024006462A (fr)
WO (1) WO2024004501A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009199868A (ja) * 2008-02-21 2009-09-03 Seiko Epson Corp 有機エレクトロルミネッセンス装置およびその製造方法
US20180190907A1 (en) * 2017-01-03 2018-07-05 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009199868A (ja) * 2008-02-21 2009-09-03 Seiko Epson Corp 有機エレクトロルミネッセンス装置およびその製造方法
US20180190907A1 (en) * 2017-01-03 2018-07-05 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same

Also Published As

Publication number Publication date
JP2024006462A (ja) 2024-01-17

Similar Documents

Publication Publication Date Title
US11569487B2 (en) Mask assembly, apparatus and method of manufacturing display device using the same, and display device
US8882922B2 (en) Organic layer deposition apparatus
JP7262212B2 (ja) 成膜装置、成膜方法および電子デバイスを製造する方法
KR20040098572A (ko) 플랫 패널 디스플레이 제조장치
US10636969B2 (en) Apparatus and method of directly patterning high resolution active matrix organic light emitting diodes using high-resolution shadow mask
KR102527121B1 (ko) 성막 장치, 유기 디바이스의 제조 장치, 및 유기 디바이스의 제조 방법
KR101046239B1 (ko) 성막 장치, 성막 시스템 및 성막 방법
KR102617764B1 (ko) 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법
WO2024004501A1 (fr) Dispositif de formation de film, procédé de formation de film et procédé de fabrication d'un dispositif électronique
US20090246941A1 (en) Deposition apparatus, deposition system and deposition method
WO2024004502A1 (fr) Procédé de fabrication de dispositif électronique et procédé de formation de film
JP2022007540A (ja) アライメント装置、成膜装置、アライメント方法、電子デバイスの製造方法、プログラム及び記憶媒体
CN113106387B (zh) 成膜装置及电子器件的制造方法
JP2008223067A (ja) 成膜用マスク部材、成膜用マスク部材の製造方法、マスク成膜方法、および成膜装置
JP2021161490A (ja) 成膜装置及び電子デバイスの製造方法
WO2024070473A1 (fr) Dispositif de formation de film et procédé de formation de film
WO2024029221A1 (fr) Appareil d'alignement, appareil de formation de film, procédé d'alignement, procédé de fabrication de dispositif électronique, programme et support de stockage
JP7446169B2 (ja) 基板搬送装置、基板処理システム、基板搬送方法、電子デバイスの製造方法、プログラム及び記憶媒体
KR20210136207A (ko) 증착 시스템
US20100055816A1 (en) Light Emitting Device Manufacturing Apparatus and Method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23830951

Country of ref document: EP

Kind code of ref document: A1