WO2024004502A1 - Procédé de fabrication de dispositif électronique et procédé de formation de film - Google Patents

Procédé de fabrication de dispositif électronique et procédé de formation de film Download PDF

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Publication number
WO2024004502A1
WO2024004502A1 PCT/JP2023/020412 JP2023020412W WO2024004502A1 WO 2024004502 A1 WO2024004502 A1 WO 2024004502A1 JP 2023020412 W JP2023020412 W JP 2023020412W WO 2024004502 A1 WO2024004502 A1 WO 2024004502A1
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Prior art keywords
film
mask
forming
light emitting
substrate
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PCT/JP2023/020412
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English (en)
Japanese (ja)
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章裕 濱野
行生 松本
美悠 山田
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キヤノントッキ株式会社
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Publication of WO2024004502A1 publication Critical patent/WO2024004502A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/20—Metallic electrodes, e.g. using a stack of layers

Definitions

  • the present invention relates to a method for manufacturing an electronic device and a method for forming a film.
  • Patent Document 1 discloses a film forming apparatus that performs film forming in-line.
  • a plurality of connected vacuum chambers constitute one production line.
  • An object of the present invention is to provide a technique for suppressing the increase in size of an apparatus used for film formation.
  • a first mask forming step of forming a first mask patterned by photolithography comprising: a second film forming step of forming a second light emitting layer on the substrate using the second mask.
  • FIG. 1 is a schematic diagram showing the configuration of a film forming apparatus according to an embodiment.
  • FIG. 1 is a diagram schematically showing a cross-sectional structure of a substrate according to an embodiment.
  • FIG. 1 is a diagram schematically showing a cross-sectional structure of a substrate according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a planar structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • FIG. 1 is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.
  • the X direction and the Y direction indicate the horizontal direction
  • the Z direction indicates the vertical direction.
  • some reference numerals may be omitted when a plurality of the same elements are shown.
  • FIG. 1 is a schematic diagram showing the configuration of a film forming apparatus 1 according to one embodiment.
  • the film forming apparatus 1 is an apparatus that forms a film on a substrate 100.
  • the substrates 100 are sequentially transported to the film forming block 301, and a film is formed on the substrates 100.
  • Such a film forming apparatus is used, for example, to manufacture each element of an organic EL display device.
  • such a film forming apparatus is used for surface treatments such as painting and forming a protective layer.
  • the film forming block 301 includes a plurality of processing chambers 303a to 303d in which the substrate 100 is processed, and a mask storage chamber in which masks before and after use are stored, surrounding a transfer chamber 302 having an octagonal shape in plan view. 305 are arranged.
  • a transport robot 302a that transports the substrate 100 is arranged in the transport chamber 302.
  • the transfer robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that moves the hand in the horizontal direction.
  • the film-forming block 301 is a cluster-type film-forming unit in which a plurality of processing chambers 303a to 303d are arranged to surround a transport robot 302a.
  • Each of the processing chambers 303a to 303d performs predetermined processing on the substrate. Note that in the following description, the processing chambers 303a to 303d may be referred to as processing chambers 303 unless otherwise distinguished.
  • processing chambers 303 one or more types of processing are performed on the substrate. Processes performed in the processing chamber 303 include alignment of a substrate and a mask, deposition of an evaporation material onto the substrate via a mask, etching of the substrate, cleaning of the substrate, application of liquid to the substrate, and measurement of the substrate.
  • a buffer chamber 306, a rotation chamber 307, and a delivery chamber 308 are arranged on the upstream and downstream sides of the film forming block 301 in the transport direction (arrow direction) of the substrate 100, respectively. During the manufacturing process, each chamber is maintained in a vacuum state.
  • the film-forming apparatus 1 has a plurality of film-forming blocks 301, and the plurality of film-forming blocks 301 are It has a configuration in which a buffer chamber 306, a turning chamber 307, and a delivery chamber 308 are connected by a connecting device. Note that the configuration of the coupling device is not limited to this, and may include only the buffer chamber 306 or the delivery chamber 308, for example.
  • the transfer robot 302a carries the substrate 100 from the upstream delivery chamber 308 to the transfer chamber 302, transfers the substrate 100 between the processing chambers 303, transfers the mask between the mask storage chamber 305 and the processing chamber 303, Then, the substrate 100 is carried out from the transfer chamber 302 to the buffer chamber 306 on the downstream side.
  • the buffer chamber 306 is a chamber for temporarily storing the substrate 100 depending on the operating status of the film forming apparatus 1.
  • the buffer chamber 306 includes a multi-tiered substrate storage shelf (also called a cassette) that can store a plurality of substrates 100 while maintaining a horizontal state with the processing surface (film formation surface) of the substrate 100 facing downward in the direction of gravity. and an elevating mechanism for elevating and lowering the substrate storage shelf in order to align the stage on which the substrates 100 are carried in or carried out with the transport position. Thereby, a plurality of substrates 100 can be temporarily accommodated and retained in the buffer chamber 306.
  • the turning chamber 307 is equipped with a device for changing the orientation of the substrate 100.
  • the rotation chamber 307 rotates the orientation of the substrate 100 by 180 degrees by a transfer robot 307a provided in the rotation chamber 307.
  • the transfer robot 307a provided in the rotation chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and transfers it to the transfer chamber 308, thereby transferring the substrate 100 between the buffer chamber 306 and the transfer chamber 308.
  • the front end and rear end in the conveyance direction (arrow direction) are interchanged.
  • the direction when carrying the substrate 100 into the film forming chamber 303 is the same in each film forming block 301, so that the scanning direction of film forming with respect to the substrate 100 and the direction of the mask are the same in each film forming block 301.
  • the directions in which the masks are installed in the mask storage chambers 305 in each film forming block 301 can be aligned, and the management of the masks can be simplified and usability can be improved.
  • the transfer chamber 308 is a chamber for transferring the substrate 100 carried in by the transfer robot 307a of the rotation chamber 307 to the transfer robot 302a of the downstream film forming block 301. If necessary, the thickness of the film formed on the substrate 100 may be measured in the delivery chamber 308. That is, the delivery room 308 may be an inspection room for inspecting the film formed on the substrate 100.
  • the control system of the film forming apparatus 1 includes a host computer 300 that controls the entire line, and control devices 309, 310, 311, 313a to 313d that control each component, and these are connected by wired or wireless communication. Communication is possible via line 300a.
  • the control devices 313a to 313d are provided corresponding to the film forming chambers 303a to 303d, and control the film forming apparatus 1, which will be described later.
  • a control device 309 controls the transfer robot 302a.
  • a control device 310 controls a transfer robot provided in a turning room 307.
  • the control device 311 controls equipment that performs alignment and film thickness measurement in the delivery room 308.
  • the host device 300 transmits information regarding the substrate 100 and instructions such as transport timing to each of the control devices 309, 310, 311, 313a to 313d, and each of the control devices 309, 310, 311, 313a to 313d performs operations based on the received instructions. Control each component.
  • Step ST2a in FIG. 2 shows a step of forming a mask 102 on the substrate 100.
  • the mask 102 is formed along the film-forming surface of the substrate 100, facing the substrate 100.
  • the mask 102 is formed by patterning using photolithography.
  • Steps ST2b to ST2c in FIG. 2 show steps of forming a film on the substrate 100 through the mask 102 in the processing chamber 303.
  • Mask 102 has an opening.
  • a film is formed on the substrate by the material forming the film passing through the opening of the mask 102 and being attached or deposited on the substrate. Examples of methods used include vapor deposition, sputtering, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), ADL (Atomic Layer Deposition), and liquid coating such as an inkjet method.
  • a film 110 is formed on the substrate 100.
  • the film 110 is a film made of an organic material.
  • a film 112 is formed on the substrate 100.
  • the membrane 112 is a membrane made of an inorganic material. A typical inorganic material is metal.
  • the mask 102 used when forming the film 110 is also used when forming the film 112. That is, film 110 and film 112 are formed on a substrate through a common mask 102.
  • the film forming apparatus preferably includes a plurality of film forming sources of different materials in one chamber.
  • a plurality of film forming sources of different materials for example, in the case of a vapor deposition apparatus, both an organic material evaporation source and a metal material evaporation source may be provided in one chamber.
  • a configuration may also be adopted in which the substrate 100 and the mask 102 are transported to a plurality of chambers while being overlapped.
  • a configuration in which both an organic film forming source and a metal film forming source are arranged in one line can be adopted.
  • FIG. 3 Another film forming method of this embodiment will be explained using FIG. 3.
  • parts similar to those in FIG. 2 are designated by the same reference numerals as in FIG. 2, and redundant explanations will be omitted as appropriate.
  • Steps ST3a to ST3b in FIG. 3 are the same as the steps shown in FIG. 2. Therefore, the explanation will be omitted.
  • a film 114 is formed on the substrate 100.
  • the membrane 114 is a membrane made of an inorganic material.
  • the film 110 and the film 114 are formed using a common mask, but they are formed at different positions on the substrate 100. Specifically, the film 114 is not formed in at least a part of the region where the film 110 is formed, or at least a part of the film 114 is formed in a region where the film 110 is not formed, or both. It is. According to such a configuration, the step of adjusting the position of the substrate 100 and the mask 102 can be omitted between two film forming steps. Therefore, the process can be simplified.
  • Film 110 is formed using one of evaporation, sputtering, CVD, PVD, ADL, or liquid coating, while film 114 is formed using another method. These methods differ in the extent to which the mask 102 wraps around the opening. Therefore, by using two arbitrary different film forming methods, the film 110 and the film 114 are formed at different positions on the substrate 100 even if they are formed using a common mask. Note that film forming methods other than those described above may be used.
  • the material adheres and accumulates in approximately the same area as the area projected by the opening using a method that allows the material to advance in a straight line.
  • the straightness of the material is low, the material is easily diffused, so that a film is formed that extends outside the area projected by the opening.
  • the film 110 when forming the film 114 over a wider area than the film 110, the film 110 can be formed by vapor deposition, and the film 114 can be formed by sputtering. In film formation by sputtering, material wraparound tends to be larger than in vapor deposition. Therefore, the film 114 can be formed over a wider area than the film 110.
  • the film 110 can be formed by vapor deposition, and the film 114 can be formed by CVD. In film formation by CVD, material wraparound tends to be larger than in vapor deposition.
  • film 110 can be formed by evaporation and film 114 can be formed by ADL.
  • vapor deposition is exemplified as a method with high straightness of material.
  • the straightness of the material is relative, and a film formation method other than vapor deposition may be used to form the film 110.
  • the material of the film 110 that is deposited first tends to enter the space between the substrate 100 and the mask 102, so the film 110 and the film 114 are separated from each other on the substrate 100. formed in different locations.
  • Parameters include the pressure within the chamber, the substrate temperature, the temperature surrounding the substrate, and the amount of material released.
  • the pressure degree of vacuum of the vacuum chamber
  • the higher the pressure in the chamber in other words, the lower the degree of vacuum, the smaller the mean free path of the material in the gaseous state. In other words, the material becomes easier to diffuse. Therefore, by performing vapor deposition at a higher pressure, it is possible to form a film over a wider range.
  • the film 110 is formed by vapor deposition in a chamber with a pressure of about 10-5 Pa
  • the film 114 is formed by vapor deposition in a chamber with a pressure of about 10-3 Pa
  • the film 114 is formed in a wider area than the film 110. be done. Note that which of the film 110 and the film 114 should be formed over a relatively wide range is appropriately selected depending on the purpose of film formation.
  • the formation of the film 110 and the formation of the film 114 may be performed using different film formation methods and under different conditions.
  • the film 110 is formed by vapor deposition in a chamber with a pressure of about 10-5 Pa, and the film 110 is formed by sputtering in a chamber with a pressure of about 10-1 Pa.
  • the film 114 can be formed over a wider area.
  • the degree of material diffusion differs depending on the temperature inside the chamber. Therefore, by performing film formation at different temperatures, the film 110 and the film 114 can be formed in different regions. The film 110 and the film 114 can be formed in different regions by performing film formation while changing the conditions for other parameters as appropriate.
  • the film 110 and the film 114 can be formed by using materials with different mean free paths. They can be formed in different areas. By using a material with a large molecular weight, the mean free path can be lowered. For example, if it is desired to form the metal film 114 over a wider area, it is better to use a material with a higher atomic number, such as silver or gold, than aluminum or magnesium.
  • the film 114 is formed over a wider area than the film 110.
  • the film 114 can be formed in a narrower area than the film 110.
  • the film 110 and the film 114 are formed through a common mask, but they are formed at different positions on the substrate 100. With such a configuration, it is possible to support the formation of films for more applications.
  • FIG. 4A schematically shows a cross-sectional structure of a light emitting element.
  • FIG. 4B schematically shows the planar structure of the light emitting element.
  • Components having the same functions as those in FIGS. 1 to 3 are given the same reference numerals as in those figures. Descriptions of parts having the same functions as those in FIGS. 1 to 3 may be omitted because they overlap with the previous description.
  • the substrate 100 is a glass substrate on which a TFT (Thin Film Transistor) is formed.
  • the substrate 100 may be a silicon wafer on which semiconductor elements are formed.
  • Both the anode electrode 401 and the cathode contact 403 are made of a metal material such as tungsten or aluminum.
  • the anode electrode 401 and the cathode contact 403 are made of the same material, they can be formed in the same patterning process.
  • the material of the anode electrode 401 and the material of the cathode contact 403 may be different.
  • the cathode contact 403 is connected to the cathode electrode 409.
  • One or more layers of an organic film (a film made of an organic material) including a light emitting layer 407 is formed between the anode electrode 401 and the cathode electrode 409. With such a configuration, current is injected into the light emitting layer 407, and the light emitting material in the light emitting layer 407 can emit light.
  • the bank 403 electrically insulates the light emitting elements or the anode electrode 401 and cathode electrode 409 of the light emitting elements.
  • the light emitting layer 407 includes a host material and a dopant material, both of which are made of known organic materials.
  • the light emitting layer 407 is formed so as to be in contact with the anode electrode 401.
  • the light emitting layer 407 is spaced apart from the cathode contact 403.
  • the film formation method and the conditions used therein are selected so that the light emitting layer 407 is formed at such a position. For example, when performing vapor deposition, it is preferable to use a lower pressure (higher degree of vacuum) in order to improve the straightness of the material. Thereby, the light-emitting layer 407 can be formed in a region where the shape of the opening of the mask 102 is projected.
  • the light emitting layer 407 may be formed outside the projection of the opening of the mask 102.
  • a possible countermeasure against such wraparound of the vapor deposition material is to increase the width of the bank 405.
  • one or more organic layers may be formed separately from the light-emitting layer 407, if necessary.
  • an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, etc. are formed. These layers, like the light-emitting layer 102, are formed by vapor deposition through the mask 102.
  • the cathode electrode 409 is a metal film.
  • the cathode electrode 409 is made of magnesium, silver, gold, aluminum, tantalum, tungsten, molybdenum, nickel, or an alloy containing at least one of these.
  • the cathode electrode 409 is also formed outside the area projected from the opening of the mask 102.
  • the cathode electrode 409 is first formed at a position covering the light emitting layer 407.
  • the cathode electrode 409 extends so as to be in contact with the cathode contact 403.
  • the cathode contact 403 is located outside the area projected from the opening of the mask 102.
  • the cathode electrode 409 can be connected to the cathode contact 403 by forming the cathode electrode 409 at a position different from that of the light emitting layer 407 while using the same mask 102 as the light emitting layer 407 .
  • the light emitting element of this embodiment includes a plurality of pixels that each emit light of a different wavelength.
  • the light emitting layer 407R emits red light
  • the light emitting layer 407G emits green light
  • the light emitting layer 407B emits blue light.
  • a so-called RGB display can be configured.
  • the light emitting element may further include pixels that emit white light.
  • the light emitting element may only include pixels of one color or two colors.
  • a passivation film 411 is formed to cover the bank 405 and the cathode electrode 409.
  • Passivation film 411 is made of silicon nitride. The passivation film protects these films by reducing the penetration of moisture into the organic layers and electrode layers formed thereunder, and by suppressing reactions to these films during the manufacturing process.
  • a resin layer 413 and a protective film 415 are formed on the passivation film 411.
  • the blue light emitting layer 407B has the largest area on a plane.
  • the green light emitting layer 407G has the second largest area.
  • the red light emitting layer 407R has the smallest area. The relationship between these areas can be changed as appropriate depending on the luminous efficiency of the luminescent layer 407 of each color.
  • the film forming method of this embodiment is different from Embodiments 1 and 2 in that a mask is formed using a photolithography method. Note that, in the subsequent drawings, the reference numerals of the same parts as those shown in FIG. 4 are appropriately omitted for the sake of simplification.
  • a passivation film 411 is formed on the substrate 100.
  • the passivation film 411 is formed by CVD.
  • the passivation film 411 covers the anode electrode 401, the cathode contact 403, and the bank 405. Passivation film 411 is formed over the entire surface of substrate 100.
  • step ST5b in FIG. 5 a resist 701 for photolithography is applied to the substrate 100. After the resist is applied, drying and baking treatments are performed as necessary.
  • step ST5c in FIG. 5 photolithography is performed to expose a portion of the resist 701 (photosensitive portion 701a). Since a positive resist 701 is used here, the photosensitive area 701a will be removed in a later development step. If a negative resist is used, the exposed areas and non-exposed areas may be replaced.
  • step ST6a in FIG. 6 the exposed resist 701 is developed.
  • the photosensitive portion 701a is removed by development.
  • the portion of the resist 701 that is removed is the portion above the anode electrode 401 of one of the three color pixels.
  • the anode electrodes 401 of the other two pixels of the three colors remain covered with the resist 701 even after development.
  • the resist 701 after development covers the cathode contact 403.
  • step ST6b in FIG. 6 the passivation film 411 is etched.
  • the resist 701 is used as a mask. That is, the portion of the passivation film 411 that is not covered with the resist 701 is removed by etching. This exposes the anode electrode 401. Furthermore, in this embodiment, a portion of the passivation film 411 covered with the resist 701 is removed by performing near-isotropic etching. As a result, after etching, the resist 701 protrudes from the passivation film 411 in the planar direction. As the resist 701 overhangs, the passivation film 411 exposes the cathode contact 403.
  • the cathode contact 403 is covered with the resist 701 but not covered with the passivation film 411.
  • the light emitting layer 407 and the cathode electrode 409 are formed using the resist 701 as a common mask, the light emitting layer 407 does not come into contact with the cathode contact 403, while the cathode electrode 409 It can be brought into contact with the cathode contact 403.
  • the passivation film 411 remains in a state covering the anode electrode 401 and cathode contact 403 of other pixels.
  • a light emitting layer 407 is formed.
  • the light emitting layer 407 is formed by vapor deposition.
  • resist 701 is used as a mask.
  • the film formation is not limited to vapor deposition, but may be performed by any method that allows the material to move in a relatively straight line with respect to the subsequent step of forming the cathode electrode 409.
  • the light emitting layer 407 is formed in approximately the same area as the projection of the opening of the resist 701.
  • a cathode electrode 409 is formed.
  • the cathode electrode 409 is formed by vapor deposition.
  • resist 701 is used as a mask.
  • the film formation is not limited to vapor deposition, but may be performed by any method that allows the material to have a higher diffusivity than the previous step of forming the light emitting layer 407.
  • the cathode electrode 409 is formed in a wider area than the projection of the opening of the resist 701. As a result, the cathode electrode 409 is also formed on the cathode contact 403.
  • cathode electrode 409 is formed on substrate 100 by vapor deposition. Then, the pressure inside the chamber during vapor deposition of the cathode electrode 409 is made higher than the pressure within the chamber during vapor deposition of the light emitting layer 407.
  • the light emitting layer 407 is formed by vapor deposition, while the cathode electrode 409 is formed by sputtering.
  • each material may be selected so that the mean free path of the material of the light emitting layer 407 is longer than the mean free path of the material of the cathode electrode 409 under the same conditions. When utilizing the difference in mean free path of materials, the film forming conditions in the two steps may be completely the same.
  • Throughput can be improved by not performing alignment between the step of forming the light emitting layer 407 and the step of forming the cathode electrode 409.
  • a process of changing the relative position between the substrate 100 and the mask 102 and an alignment process are required between the process of forming the light emitting layer 407 and the process of forming the cathode electrode 409. may be included in between.
  • the cathode electrode 409 is not formed on a part of the light emitting layer 407, it is effective to change the relative positions of the substrate 100 and the mask 102.
  • the structure of the light emitting element may be changed so that the cathode electrode 409 can be easily formed over a wider area.
  • the height of the bank 405a between the anode electrode 401 and the cathode contact 403 is lower than the height of the other banks 405.
  • the degree of inhibition of material diffusion by the bank 405a is reduced, and the cathode electrode 409 can be formed over a wider range.
  • a structure may be adopted in which no bank is formed between the anode electrode 401 and the cathode contact 403.
  • the explanation has been made assuming that the resist 701 is used as a mask.
  • the outer edge of the cathode electrode 409 may be defined by the passivation film 411. Therefore, in step ST7b of FIG. 7, it may be considered that the resist 701 and the passivation film 411 are integrally used as a mask.
  • a passivation film 411a is formed by CVD.
  • the passivation film 411a is formed to cover the cathode electrode 409 formed in the previous step.
  • the passivation film 411a is preferably formed by the same method as the step of forming the passivation film 411 in step ST5a in FIG.
  • the passivation film 411a formed in this step and the passivation film 411 formed in the previous step and remaining after etching will be collectively referred to as passivation film 411.
  • step ST8b in FIG. 8 the resist 701 is peeled off from the substrate 100.
  • the light emitting layer 407 formed on the resist 701 and the cathode electrode 409 are lifted off.
  • the passivation film 411 is exposed on the surface of the substrate 100.
  • the portion of the passivation film 411 formed in the opening of the resist 701 may be a concave portion or a convex portion relative to other portions.
  • the surface shape may be different in this way, the substrate 100 that has completed step ST8b in FIG. 8 is in the same state as the substrate 100 shown in step ST5a in FIG. 5.
  • step ST5b in FIG. 5 the steps from step ST5b in FIG. 5 to step ST8b in FIG. 8 are repeated for pixels of other colors. Repeated explanations will be omitted.
  • step ST9a of FIG. 9 light emitting layers 407R, 407G, 407B of each color and cathode electrodes (numerals are omitted) on each are formed. Furthermore, the cathode electrode of each pixel is covered with a passivation film 411.
  • a resin layer 413 is formed.
  • the resin layer 413 is formed for the purpose of planarization or the like.
  • the resin layer 413 is omitted as appropriate.
  • a protective film 415 (see FIG. 4) is formed.
  • a plurality of films of different types are formed on the substrate using a single mask. According to such a configuration, it is possible to suppress the increase in size of the apparatus compared to the case where a production line is configured for each type of film. Note that even when using the film forming method of this embodiment, a plurality of manufacturing lines may be configured as necessary.

Abstract

La présente invention concerne un procédé de fabrication de dispositif électronique qui comprend : une première étape de formation de masque pour former un premier masque qui est modélisé par photolithographie ; une première étape de formation de film pour utiliser le premier masque afin de former une première couche électroluminescente sur un substrat ; une première étape de scellement étanche pour former un film de scellement étanche sur la première couche électroluminescente ; une seconde étape de formation de masque, après la première étape de scellement étanche, pour former un second masque qui est modélisé par photolithographie ; et une seconde étape de formation de film pour utiliser le second masque afin de former une seconde couche électroluminescente sur le substrat.
PCT/JP2023/020412 2022-07-01 2023-06-01 Procédé de fabrication de dispositif électronique et procédé de formation de film WO2024004502A1 (fr)

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JP2022107340A JP2024006463A (ja) 2022-07-01 2022-07-01 電子デバイスの製造方法、及び成膜方法
JP2022-107340 2022-07-01

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009199868A (ja) * 2008-02-21 2009-09-03 Seiko Epson Corp 有機エレクトロルミネッセンス装置およびその製造方法
US20180190907A1 (en) * 2017-01-03 2018-07-05 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009199868A (ja) * 2008-02-21 2009-09-03 Seiko Epson Corp 有機エレクトロルミネッセンス装置およびその製造方法
US20180190907A1 (en) * 2017-01-03 2018-07-05 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same

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