WO2023279647A1 - Verification method for repair analysis, electronic device, and storage medium - Google Patents

Verification method for repair analysis, electronic device, and storage medium Download PDF

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Publication number
WO2023279647A1
WO2023279647A1 PCT/CN2021/135714 CN2021135714W WO2023279647A1 WO 2023279647 A1 WO2023279647 A1 WO 2023279647A1 CN 2021135714 W CN2021135714 W CN 2021135714W WO 2023279647 A1 WO2023279647 A1 WO 2023279647A1
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address
file
repair
failure
raw data
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PCT/CN2021/135714
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French (fr)
Chinese (zh)
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杨柳
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长鑫存储技术有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0706Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
    • G06F11/0727Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a storage system, e.g. in a DASD or network based storage system
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0793Remedial or corrective actions

Definitions

  • the present application relates to, but is not limited to, a method for verifying a repair algorithm, an electronic device, and a storage medium.
  • DRAM Dynamic Random Access Memory
  • the verification of the DRAM repair algorithm (Repair Analysis, RA) is generally carried out on the test machine, and the corresponding failure unit is set for a certain die, and the relevant data of the failure unit (also called “Raw Data”) is generated on the test machine. ”), the repair plan is calculated by RA, and the matching degree between the set failure unit and the repair plan is manually compared.
  • This verification method takes a lot of time and is prone to omissions.
  • Another verification solution is to debug (Debug) the repair solution on the wafer, that is, directly damage the wafer, perform test repair, and perform RA verification based on the test whether new failure units appear after repair.
  • this verification method will cause damage to the wafer, and other tests cannot be performed.
  • both of the above two verification methods have the disadvantages of time-consuming, incomplete verification, and high cost.
  • the present application provides a method for verifying a repair algorithm, electronic equipment and a storage medium.
  • the first aspect of the present application provides a kind of verification method of patching algorithm, is applied to the simulation software platform, comprises: the failure address of the dynamic random access memory of configuration simulation failure; Form the Raw Data document of described failure address; Described Raw The data file is operated by a repairing algorithm to obtain the address file and repair plan file of the invalid address; based on the repair plan file, the invalid address in the address file is repaired, and the repair result is displayed.
  • the configuration simulates the failure address of the failed DRAM, including:
  • An address space and an address input window of the simulated failure DRAM are provided, and the failure address input in the address input window based on the address space is received.
  • the configuration simulates the failure address of the failed DRAM, including:
  • An address array of the address space of the simulated failure DRAM is provided, and an address selected from the address array is determined as the failure address.
  • the method also includes:
  • the described Raw Data file is operated through a repair algorithm to obtain the address file and the repair plan file of the failure address, including:
  • the Raw Data file is operated through the repair algorithm corresponding to the product type to obtain the address file and repair plan file of the failure address.
  • the Raw Data file before performing operations on the Raw Data file through a repair algorithm to obtain the address file of the failure address and the repair plan file, it also includes:
  • the data format of the Raw Data file is used to indicate that when the Raw Data file is operated by the repair algorithm, the operation is performed in a conventional manner or in a compressed manner.
  • the configuration simulates the failure address of the failed DRAM, including:
  • the Raw Data file forming the failure address includes:
  • the Raw Data file is operated through a repair algorithm to obtain the address file and repair plan file of the failure address, including:
  • the Raw Data file is respectively calculated according to the test site to which the failure address belongs, to obtain the address file and the repair plan file of the failure address contained in each of the test sites.
  • the Raw Data file is operated through a repair algorithm to obtain the address file and repair plan file of the failure address, including:
  • the Raw Data file is combined according to at least two combined test sites to which the failure address belongs, to obtain the address file and the repair plan file of the failure address contained in the combined test site.
  • the repairing of invalid addresses in the address file based on the repairing scheme file, and displaying the repairing results include:
  • the displaying the repair result includes:
  • An address array of the address space of the simulated failure DRAM is provided, and a result of whether the selected failure address file can be successfully repaired by the corresponding repair solution file is identified in the address array.
  • the result of identifying in the address array whether the selected failure address file can be successfully repaired by the corresponding repair solution file includes:
  • the position of the failure address in the failure address file, the position of the repair solution in the repair solution file, and whether the two match are identified in the address array by at least one of different characters, colors, and symbols.
  • the method also includes:
  • a second aspect of the present application provides an electronic device, including: at least one processor; and,
  • a memory connected in communication with the at least one processor; wherein, the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processing
  • the device can execute the verification method of the patching algorithm described in the first aspect.
  • a third aspect of the present application provides a computer-readable storage medium storing a computer program, and when the computer program is executed by a processor, the method for verifying the repair algorithm described in the first aspect is implemented.
  • the method for verifying the repair algorithm, the electronic device and the storage medium perform offline verification on the RA algorithm of the DRAM through a simulation software platform.
  • Use the offline verification method to flexibly configure the failure address of the simulated failure DRAM; form the Raw Data file of the failure address; operate the Raw Data file through the repair algorithm to obtain the address file of the failure address and the repair plan file; finally based on The repair plan document repairs the invalid addresses in the address file and displays the repair results, so as to complete the verification process of the RA algorithm without occupying the test machine and causing damage to the wafer, reducing the cost of DRAM production; making up for the current manual Omissions in the comparison method lead to incomplete repair of failed units; the process of online multi-site testing can be simulated to fully verify the results of multi-site repair algorithms and improve the efficiency of algorithm verification.
  • Fig. 1 is a flowchart one of a verification method of a repair algorithm according to an embodiment of the present application
  • FIG. 2 is a schematic diagram of an invalid address configuration process according to an embodiment of the present application.
  • FIG. 3 is a schematic diagram of an invalidation address configuration process according to an embodiment of the present application.
  • FIG. 4 is a second flow chart of a verification method of a repair algorithm according to an embodiment of the present application.
  • FIG. 5 is a schematic diagram of an invalidation address configuration process according to an embodiment of the present application.
  • Fig. 6 is a schematic diagram of a Raw Data document according to an embodiment of the present application.
  • FIG. 7 is a flowchart three of a verification method of a repair algorithm according to an embodiment of the present application.
  • FIG. 8 is a distribution diagram of repair schemes and failure addresses according to an embodiment of the present application.
  • FIG. 9 is a flowchart four of a verification method of a patching algorithm according to an embodiment of the present application.
  • Fig. 10 is a schematic diagram of repair results according to an embodiment of the present application.
  • Fig. 11 is a schematic diagram of repair results according to an embodiment of the present application.
  • FIG. 12 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
  • a die is the smallest unit of a wafer.
  • the wafer is processed by the DRAM manufacturing process to form a preset number of DRAMs on each die.
  • Each DRAM contains a preset number of storage units.
  • a cell is assigned a memory address.
  • the verification of the RA algorithm for the DRAM failure address is generally carried out on the test machine.
  • One is to first set the failed unit on the die, generate raw data of the failed unit on the test machine, calculate the repair plan through the RA algorithm, and manually compare the matching degree between the set failed unit and the repair plan.
  • This method takes a lot of time and is prone to omissions.
  • the other is to directly cause damage to the wafer, perform a test repair, and verify the RA algorithm based on whether a new failure unit appears in the test after the repair.
  • this verification method will cause damage to the wafer, and other tests cannot be performed.
  • both of the above two verification methods have the disadvantages of time-consuming, incomplete verification, and high cost.
  • This application proposes an offline verification scheme for the RA algorithm of DRAM.
  • This solution does not need to be completed on the test machine, but simulates the DRAM failure address through the simulation software platform, uses the RA algorithm to be verified to calculate the failure address, obtains the failure address and the document of the repair plan, and selects the corresponding failure address and
  • the patching scheme performs patching operations, and flexibly displays the patching results based on the software platform to verify the RA algorithm.
  • This application scheme does not occupy the test machine, and will not cause damage to the wafer, reducing the cost of DRAM production; at the same time, it makes up for the omissions that occur in the current manual comparison method, resulting in incomplete repair of failed units; it can simulate multiple stations on the line
  • the testing process fully verifies the results of the multi-site patching algorithm and improves the efficiency of algorithm verification.
  • the method for verifying a repair algorithm as shown in FIG. 1 is applied to a simulation software platform, and includes the following steps.
  • Step 101 Configure the invalidation address of the dynamic random access memory that simulates invalidation.
  • the inspector selects or creates the DRAM product information to be simulated to fail on the simulation software platform, and configures the failure address of the DRAM.
  • the failure address may be the storage address of each storage unit located on a certain die on the wafer carrying the DRAM.
  • the process of configuring the failure address is not limited.
  • the failure address can be configured in the following two ways.
  • Method 1 providing an address space and an address input window for simulating a failed DRAM, and receiving a failure address input in the address input window based on the address space.
  • FIG. 2 For example, as shown in Figure 2, multiple storage blocks (banks) of DRAM are provided on the simulation software platform, and the address space of the storage units contained in each bank is 16-bit binary in the X direction and 10-bit binary in the Y direction.
  • DQ has three bits, and each time a memory unit cell (bit) is read, the subsequent 7 bits are read out, so there are 8 bits, which is 2 to the 3rd power.
  • Row Fail shown in the figure is the storage address of a horizontal storage unit
  • Col Fail is the storage address of a vertical storage unit
  • Single Fail is the storage address of a single-point storage unit.
  • the inspector can input the unit address as the failure unit in the address input window according to the requirement.
  • An example of the input result may be shown in FIG. 2 .
  • Method 2 Provide an address array simulating the address space of the failed DRAM, and determine an address selected from the address array as the failed address.
  • multiple storage blocks (banks) of DRAM are provided on the simulation software platform, and the address space of the storage unit contained on each bank is 16-bit binary in the X direction and 10-bit binary in the Y direction. system.
  • the address spaces of the storage units on these chips can be displayed on the operation interface of the simulation software platform in the form of address arrays.
  • Each small square in the figure can represent not only a storage unit, but also the storage address corresponding to the storage unit. The inspector can check the unit address as the failed unit in the address array according to the requirement.
  • Step 102 Form a Raw Data file of the invalidation address.
  • the simulation software platform generates the original data of the failure address, that is, the Raw Data file, according to the failure address input or checked by the inspector. According to the number of failure addresses actually configured, the category of the division group, etc., the generated Raw Data files can also correspond to one or more.
  • Step 103 the Raw Data file is operated through the repair algorithm to obtain the address file and the repair plan file of the invalid address.
  • the repair algorithm here is the RA algorithm to be verified.
  • the above-mentioned Raw Data file is calculated by the RA algorithm, and the repair solution for the invalid address can be obtained.
  • not every failure address can be calculated to obtain the corresponding repair solution. It is possible that there is no corresponding repair solution for some failure addresses, or there is a repair solution but the corresponding failure address cannot be corrected. repair. Therefore, in this embodiment, after the operation of the repairing algorithm, only the address file and the repairing scheme file having the relationship between the repaired and the repaired are obtained.
  • the address file can be obtained according to the number of previously invalid addresses, the category of the group, etc., and contains one or more files of invalid addresses. There is a one-to-one correspondence between the repair plan document and the address document, and each repair plan document includes (or may not include) a repair plan for repairing invalid addresses in the corresponding address file.
  • the RA algorithm to be verified may be various RA algorithms developed according to the types of DRAM products, and each RA algorithm is dedicated to repairing and analyzing the failure addresses of the corresponding DRAM type products.
  • the product type of the dynamic random access memory can be obtained first, and according to the product type of the DRAM to be simulated to fail, the failure address of the DRAM to be simulated to fail can be selected to match more The RA algorithm performs repair analysis, thereby improving the accuracy of repair analysis.
  • this step may include: operating the Raw Data file through the repair algorithm corresponding to the product type to obtain the address file and repair plan file of the invalid address. Therefore, the matching degree between the address file of the invalid address and the repair plan file is improved, and the accuracy of subsequent repair operations is improved.
  • the operation can be performed in a conventional or compressed manner.
  • the conventional method is to test each address unit independently to determine whether each address unit is a failure address;
  • the compressed mode is to test the associated multiple address units together, when at least one address unit in the multiple address units is When the address is invalid, it is determined that the plurality of address units are all invalid addresses.
  • the data format of the Raw Data file can be obtained first, and the data format is used to indicate that when the Raw Data file is operated by the patching algorithm, the operation is performed in a conventional manner or in a compressed manner .
  • the simulation software platform provides a selection interface for selecting the data format of the Raw Data file before the detection personnel configures the invalidation address of the dynamic random access memory of the simulated failure, and the detection personnel selects the Raw Data in the interface.
  • the data format of the document which instructs the simulation software platform to perform the operation of the RA algorithm in a conventional way or in a compressed way.
  • Step 104 Repair the invalid address in the address file based on the repair plan document, and display the repair result.
  • the simulation software platform After the simulation software platform completes the RA algorithm calculation to obtain the address file and repair plan file of the failed address, it can automatically repair the failed address in the corresponding address file according to the repair plan in the repair plan file, and save the address file in each address file.
  • the result of whether the invalid address is corrected is displayed on the platform interface.
  • the simulation software platform performs a patching operation on the specified address document and the patching scheme document based on the selection operation of the inspector, and displays the patching result.
  • the RA algorithm of the DRAM is verified offline through a simulation software platform.
  • Use the offline verification method to flexibly configure the failure address of the simulated failure DRAM; form the Raw Data file of the failure address; operate the Raw Data file through the repair algorithm to obtain the address file of the failure address and the repair plan file; finally based on The repair plan document repairs the invalid addresses in the address file and displays the repair results, so as to complete the verification process of the RA algorithm without occupying the test machine and causing damage to the wafer, reducing the cost of DRAM production; making up for the current manual Omissions in the comparison method lead to incomplete repair of failed units; the process of online multi-site testing can be simulated to fully verify the results of multi-site repair algorithms and improve the efficiency of algorithm verification.
  • step 101 may include the following sub-steps.
  • Sub-step 1011 Determine the die that generates the failure address.
  • n dies on the wafer may be selected as dies configured with failure addresses.
  • the n grains are marked as: Die 1, Die 2,... Die n.
  • Sub-step 1012 Determine at least one test site and the test items contained in each test site.
  • each test site can be simulated and configured, and each test site corresponds to a different test stage (stage), for example: high temperature test stage (stage00), low temperature test stage (stage01), aging test stage ( stage02).
  • stage00 high temperature test stage
  • stage01 low temperature test stage
  • stage02 aging test stage
  • Each test site can include multiple test items.
  • each test site may include m test items. The m test items are respectively marked as: test item 1, test item 2, . . . test item m.
  • the inspector may select at least one test site, and configure a certain number of test items for the selected test site, so as to simulate a real failure environment corresponding to the configured failure address.
  • Sub-step 1013 Select the failure address of each test item belonging to each test site from the determined die.
  • inspectors configure some address units from the above-mentioned determined die as failure addresses, and associate these failure addresses with the test items in the configured test sites, thereby simulating the actual failure environment, The test site and test item to which the failure source of the failure address in the DRAM product belongs.
  • FIG. 5 it is an operation diagram of the result of configuring failure addresses for multiple test items of multiple test sites.
  • FIG. 5 it is an operation diagram of the result of configuring failure addresses for multiple test items of multiple test sites.
  • step 102 may be:
  • Sub-step 1021 Form the Raw Data file of the failure address of each test item belonging to each test site.
  • the number of documents and the failure address contained in each document can also be divided according to the test site and the test item to which the failure address belongs.
  • the failure address of any test item belonging to any test site is uniquely included in a Raw Data file.
  • rdm_1.dat m is the test item number, 1:Site (storage unit) number.
  • step 103 may be:
  • Sub-step 1031 Test the Raw Data file according to the test site to which the failure address belongs, and obtain the address file and repair plan document of the failure address contained in each test site.
  • the tester when performing RA algorithm calculation on the failure address in the Raw Data file, can choose to separately execute the RA algorithm on the Raw Data files belonging to different test sites, so that according to the results contained in each test site obtained, The address file and repair plan file of the failure address, to verify the repair analysis ability of the RA algorithm alone applied to each test site.
  • step 103 may also be:
  • Sub-step 1032 Raw Data file is carried out combination test by at least two combined test sites after failure address belongs, obtains the address file and the repair plan document of the failure address contained in the combined test site.
  • the tester when performing RA algorithm calculation on the failure address in the Raw Data file, the tester can choose to combine the Raw Data files belonging to different test sites and then perform the RA algorithm as a whole, so that according to the obtained combination
  • the address files and repair plan files of the failure addresses contained in the test site verify the repair analysis ability of the RA algorithm applied to the combination of multiple test sites.
  • the addresses covered by the address file and the repair solution file can be clearly identified in the simulation software platform in the form of an address space array. address unit.
  • the address units identified in the two arrays can be directly covered and matched (Cover) to obtain a repair result.
  • the failure address of DRAM is divided by setting multi-site multi-test items to form corresponding Raw Data files; the Raw Data files of different test sites are used for RA calculations independently, or for at least two test sites.
  • the RA calculation is performed after the failure address is combined, so as to verify the repair analysis ability of the RA algorithm applied to a single test site or a combination of multiple test sites according to the obtained address document and repair plan document of the failure address.
  • step 104 may include the following sub-steps.
  • Sub-step 1041 Provide a file selection interface, and perform a repair operation based on the invalidation address file and the corresponding repair plan file selected on the interface.
  • the simulation software platform will provide an operation interface for selecting failure address files and corresponding repair solution files. Detectors can select the patch file in the patch file menu (FU File), select the address file in the address file menu (MD File); then click "EXECUTE" to run the patch process. After that, the repair result information will be displayed at the bottom of the operation interface.
  • the manner of displaying the repair result is:
  • An address array of the address space of the simulated invalid DRAM is provided, and a result of whether the selected invalid address file can be successfully repaired by the corresponding repair solution file is identified in the address array.
  • the location of the failure address in the failure address document In the actual display of repair results, the location of the failure address in the failure address document, the location of the repair solution in the repair solution document, and Whether the two match.
  • the so-called match means that the invalid address is correctly repaired by the repair scheme. For example, when color is used for marking, the failure address can be marked in red, the repair solution can be marked in green, and the match between the failure address and the repair solution can be marked in yellow.
  • the inspector can also perform the export operation of the repair result in the simulation software platform as needed, and the simulation software platform generates and exports the repair result to a specified directory file based on the export operation of the repair result. For example, by clicking "OUTPUT", the inspector can export the repair result for subsequent data statistics and analysis.
  • the simulation software platform provides a file selection interface to facilitate the detection personnel to trigger the execution of the repair operation based on the failure address file selected on the interface and the corresponding repair plan file.
  • a file selection interface to facilitate the detection personnel to trigger the execution of the repair operation based on the failure address file selected on the interface and the corresponding repair plan file.
  • the embodiment of the present application also provides an electronic device, as shown in FIG. 12 , including: at least one processor 201; and a memory 202 communicatively connected to the at least one processor 201; The instructions executed by the at least one processor 201, the instructions are executed by the at least one processor 201, so that the at least one processor 201 can execute the methods corresponding to the above-mentioned Figures 1, 4, 7, and 9 example
  • the memory 202 and the processor 201 are connected by a bus, and the bus may include any number of interconnected buses and bridges, and the bus connects one or more processors 201 and various circuits of the memory 202 together.
  • the bus may also connect together various other circuits such as peripherals, voltage regulators, and power management circuits, all of which are well known in the art and therefore will not be further described herein.
  • the bus interface provides an interface between the bus and the transceivers.
  • a transceiver may be a single element or multiple elements, such as multiple receivers and transmitters, providing a means for communicating with various other devices over a transmission medium.
  • the data processed by the processor 201 is transmitted on the wireless medium through the antenna, and the antenna also receives the data and transmits the data to the processor 201 .
  • Processor 201 is responsible for managing the bus and general processing, and may also provide various functions including timing, peripheral interface, voltage regulation, power management and other control functions. And the memory 202 may be used to store data used by the processor 201 when performing operations.
  • the embodiment of the present application also provides a computer-readable storage medium storing a computer program.
  • the computer program is executed by the processor, the above-mentioned method embodiments corresponding to FIG. 1 , FIG. 4 , FIG. 7 , and FIG. 9 are realized.
  • a storage medium includes several instructions to make a device ( It may be a single-chip microcomputer, a chip, etc.) or a processor (processor) to execute all or part of the steps of the methods described in the various embodiments of the present application.
  • the aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disc, etc., which can store program codes. .
  • the RA algorithm of the DRAM is verified offline through a simulation software platform.
  • Use the offline verification method to flexibly configure the failure address of the simulated failure DRAM; form the Raw Data file of the failure address; operate the Raw Data file through the repair algorithm to obtain the address file of the failure address and the repair plan file; finally based on The repair plan document repairs the invalid addresses in the address file and displays the repair results, so as to complete the verification process of the RA algorithm without occupying the test machine and causing damage to the wafer, reducing the cost of DRAM production; making up for the current manual Omissions in the comparison method lead to incomplete repair of failed units; the process of online multi-site testing can be simulated to fully verify the results of multi-site repair algorithms and improve the efficiency of algorithm verification.

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Abstract

A verification method for repair analysis, an electronic device, and a storage medium. The method can be applied to a simulation software platform, and comprises: configuring a failure address of a dynamic random access memory that simulates a failure (101); forming a Raw Data document of the failure address (102); performing an operation on the Raw Data document by means of repair analysis to obtain an address document and a repair solution document of the failure address (103); and repairing the failure address in the address document on the basis of the repair solution document, and displaying a repair result (104).

Description

修补算法的验证方法、电子设备及存储介质Verification method, electronic device and storage medium of patching algorithm
本申请基于申请号为202110772368.X,申请日为2021年07月08日,申请名称为“修补算法的验证方法、电子设备及存储介质”的中国专利申请提出,并要求该中国专利申请的优先权,该中国专利申请的全部内容在此引入本申请作为参考。This application is based on the Chinese patent application with the application number 202110772368.X, the application date is July 08, 2021, and the application name is "Verification method for repair algorithm, electronic equipment and storage medium", and the priority of this Chinese patent application is requested Right, the entire content of this Chinese patent application is hereby incorporated into this application as a reference.
技术领域technical field
本申请涉及但不限于一种修补算法的验证方法、电子设备及存储介质。The present application relates to, but is not limited to, a method for verifying a repair algorithm, an electronic device, and a storage medium.
背景技术Background technique
对于生产不同动态随机存取存储器(Dynamic Random Access Memory,DRAM)产品的公司,其每个产品的失效单元修补方案都会有所区别。For companies that produce different DRAM (Dynamic Random Access Memory, DRAM) products, the repairing solutions for failed cells of each product will be different.
目前,DRAM修补算法(Repair Analysis,RA)的验证一般是在测试机台上进行,给某个晶粒设定相应的失效单元,在测试机台产生失效单元的相关数据(也称“Raw Data”),经RA计算得出修补方案,人工比对设定的失效单元和修补方案的匹配度,该验证方式需花费大量时间,易出现遗漏。另一种验证方案是在wafer上调试(Debug)修补方案,即直接对wafer造成损坏,执行测试修补,以修补后测试是否出现新的失效单元为基准来进行RA的验证。但该验证方式会造成wafer损坏,不能再进行其它测试。且以上两种验证方式都存在耗时、验证不完整、成本大的缺点。At present, the verification of the DRAM repair algorithm (Repair Analysis, RA) is generally carried out on the test machine, and the corresponding failure unit is set for a certain die, and the relevant data of the failure unit (also called "Raw Data") is generated on the test machine. ”), the repair plan is calculated by RA, and the matching degree between the set failure unit and the repair plan is manually compared. This verification method takes a lot of time and is prone to omissions. Another verification solution is to debug (Debug) the repair solution on the wafer, that is, directly damage the wafer, perform test repair, and perform RA verification based on the test whether new failure units appear after repair. However, this verification method will cause damage to the wafer, and other tests cannot be performed. Moreover, both of the above two verification methods have the disadvantages of time-consuming, incomplete verification, and high cost.
发明内容Contents of the invention
以下是对本申请详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。The following is an overview of the subject matter described in detail in this application. This summary is not intended to limit the scope of the claims.
本申请提供一种修补算法的验证方法、电子设备及存储介质。The present application provides a method for verifying a repair algorithm, electronic equipment and a storage medium.
本申请的第一方面提供一种修补算法的验证方法,应用于模拟软件平台,包括:配置模拟失效的动态随机存取存储器的失效地址;形成所述失效地址的Raw Data文档;将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档;基于所述修补方案文档对所述地址文档中的失效地址进行修补,并展示修补结果。The first aspect of the present application provides a kind of verification method of patching algorithm, is applied to the simulation software platform, comprises: the failure address of the dynamic random access memory of configuration simulation failure; Form the Raw Data document of described failure address; Described Raw The data file is operated by a repairing algorithm to obtain the address file and repair plan file of the invalid address; based on the repair plan file, the invalid address in the address file is repaired, and the repair result is displayed.
根据本申请一些实施例,所述配置模拟失效的动态随机存取存储器的失效地址,包括:According to some embodiments of the present application, the configuration simulates the failure address of the failed DRAM, including:
提供所述模拟失效的动态随机存取存储器的地址空间及地址输入窗口,并接收基于所述地址空间在所述地址输入窗口中输入的所述失效地址。An address space and an address input window of the simulated failure DRAM are provided, and the failure address input in the address input window based on the address space is received.
根据本申请一些实施例,所述配置模拟失效的动态随机存取存储器的失效地址,包括:According to some embodiments of the present application, the configuration simulates the failure address of the failed DRAM, including:
提供所述模拟失效的动态随机存取存储器的地址空间的地址阵列,并将从所述地址阵列中选取的地址确定为所述失效地址。An address array of the address space of the simulated failure DRAM is provided, and an address selected from the address array is determined as the failure address.
根据本申请一些实施例,所述方法还包括:According to some embodiments of the present application, the method also includes:
获取所述动态随机存取存储器的产品类型;Obtaining the product type of the DRAM;
所述将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档,包括:The described Raw Data file is operated through a repair algorithm to obtain the address file and the repair plan file of the failure address, including:
将所述Raw Data文档经与所述产品类型对应的修补算法进行运算,得到所述失效地址的地址文档及修补方案文档。The Raw Data file is operated through the repair algorithm corresponding to the product type to obtain the address file and repair plan file of the failure address.
根据本申请一些实施例,所述将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档之前,还包括:According to some embodiments of the present application, before performing operations on the Raw Data file through a repair algorithm to obtain the address file of the failure address and the repair plan file, it also includes:
获取所述Raw Data文档的数据格式,所述数据格式用于指示在将所述Raw Data文档经所述修补算法进行运算时,采用常规方式或者采用压缩方式进行运算。Obtain the data format of the Raw Data file, and the data format is used to indicate that when the Raw Data file is operated by the repair algorithm, the operation is performed in a conventional manner or in a compressed manner.
根据本申请一些实施例,所述配置模拟失效的动态随机存取存储器的失效地址,包括:According to some embodiments of the present application, the configuration simulates the failure address of the failed DRAM, including:
确定产生所述失效地址的晶粒;determining the die generating the failure address;
确定至少一个测试站点,以及每个所述测试站点所包含的测试项目;Determine at least one test site, and the test items included in each test site;
从确定的所述晶粒中选择所属于各所述测试站点中各测试项目的失效地址。Selecting failure addresses belonging to each test item in each of the test stations from the determined dies.
根据本申请一些实施例,所述形成所述失效地址的Raw Data文档,包括:According to some embodiments of the present application, the Raw Data file forming the failure address includes:
形成所属于各所述测试站点中各测试项目的所述失效地址的Raw Data文档。Form the Raw Data file of the failure addresses belonging to each test item in each of the test sites.
根据本申请一些实施例,所述将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档,包括:According to some embodiments of the present application, the Raw Data file is operated through a repair algorithm to obtain the address file and repair plan file of the failure address, including:
将所述Raw Data文档按所述失效地址所属的测试站点分别进行运算,得到各所述测试站点所包含的所述失效地址的地址文档及修补方案文档。The Raw Data file is respectively calculated according to the test site to which the failure address belongs, to obtain the address file and the repair plan file of the failure address contained in each of the test sites.
根据本申请一些实施例,所述将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档,包括:According to some embodiments of the present application, the Raw Data file is operated through a repair algorithm to obtain the address file and repair plan file of the failure address, including:
将所述Raw Data文档按所述失效地址所属的至少两个组合后的测试站点进行组合运算,得到组合后的所述测试站点所包含的所述失效地址的地址文档及修补方案文档。The Raw Data file is combined according to at least two combined test sites to which the failure address belongs, to obtain the address file and the repair plan file of the failure address contained in the combined test site.
根据本申请一些实施例,所述基于所述修补方案文档对所述地址文档中的失效地址进行修补,并展示修补结果,包括:According to some embodiments of the present application, the repairing of invalid addresses in the address file based on the repairing scheme file, and displaying the repairing results include:
提供文件选择界面,并基于在该界面选择的所述失效地址文档及对应的所述修补方案文档执行修补操作;Provide a file selection interface, and perform a repair operation based on the invalidation address file and the corresponding repair plan file selected on the interface;
展示修补结果。Display the repair result.
根据本申请一些实施例,所述展示修补结果包括:According to some embodiments of the present application, the displaying the repair result includes:
提供所述模拟失效的动态随机存取存储器的地址空间的地址阵列,并在该地址阵列中标识出所选择的失效地址文档是否能被所述对应的修补方案文档成功修补的结果。An address array of the address space of the simulated failure DRAM is provided, and a result of whether the selected failure address file can be successfully repaired by the corresponding repair solution file is identified in the address array.
根据本申请一些实施例,所述在该地址阵列中标识出所选择的失效地址文档是否能被所述对应的修补方案文档成功修补的结果,包括:According to some embodiments of the present application, the result of identifying in the address array whether the selected failure address file can be successfully repaired by the corresponding repair solution file includes:
通过不同的文字、颜色、符号中的至少一种方式在所述地址阵列中区别标识出失效地址文档中的失效地址的位置,所述修补方案文档中修补方案的位置,以及二者是否匹配。The position of the failure address in the failure address file, the position of the repair solution in the repair solution file, and whether the two match are identified in the address array by at least one of different characters, colors, and symbols.
根据本申请一些实施例,所述方法还包括:According to some embodiments of the present application, the method also includes:
基于对修补结果的导出操作,生成并导出修补结果到指定目录文件。Based on the export operation of the repair result, generate and export the repair result to the specified directory file.
本申请的第二方面提供一种电子设备,包括:至少一个处理器;以及,A second aspect of the present application provides an electronic device, including: at least one processor; and,
与所述至少一个处理器通信连接的存储器;其中,所述存储器存储有可被所述至少一个处理器执行的指令,所述指令被所述至少一个处理器执行,以使所述至少一个处理器能够执行第一方面所述的修补算法的验证方法。A memory connected in communication with the at least one processor; wherein, the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processing The device can execute the verification method of the patching algorithm described in the first aspect.
本申请的第三方面提供一种计算机可读存储介质,存储有计算机程序,所述计算机程序被处理器执行时实现第一方面所述的修补算法的验证方法。A third aspect of the present application provides a computer-readable storage medium storing a computer program, and when the computer program is executed by a processor, the method for verifying the repair algorithm described in the first aspect is implemented.
本申请实施例所提供的修补算法的验证方法、电子设备及存储介质,通过模拟软件平台对DRAM的RA算法进行线下验证。利用线下验证方式灵活配置模拟失效的动态随机存取存储器的失效地址;形成失效地址的Raw Data文档;将Raw Data文档经修补算法进行运算,得到失效地址的地址文档及修补方案文档;最后基于修补方案文档对地址文档中的失效地址进行修补,并展示修补结果,从而在不占用测试机台和不对wafer造成损坏的条件下完成RA算法的验证过程,减少DRAM生产的成本;弥补当前以人工比对方式所出现的遗漏,而造成失效单元修补不完整;可模拟线上多站测试的流程,充分验证多站修补算法的结果,提高算法验证的效率。The method for verifying the repair algorithm, the electronic device and the storage medium provided in the embodiments of the present application perform offline verification on the RA algorithm of the DRAM through a simulation software platform. Use the offline verification method to flexibly configure the failure address of the simulated failure DRAM; form the Raw Data file of the failure address; operate the Raw Data file through the repair algorithm to obtain the address file of the failure address and the repair plan file; finally based on The repair plan document repairs the invalid addresses in the address file and displays the repair results, so as to complete the verification process of the RA algorithm without occupying the test machine and causing damage to the wafer, reducing the cost of DRAM production; making up for the current manual Omissions in the comparison method lead to incomplete repair of failed units; the process of online multi-site testing can be simulated to fully verify the results of multi-site repair algorithms and improve the efficiency of algorithm verification.
在阅读并理解了附图和详细描述后,可以明白其他方面。Other aspects will be apparent to others upon reading and understanding the drawings and detailed description.
附图说明Description of drawings
并入到说明书中并且构成说明书的一部分的附图示出了本申请的实施例,并且与描述一起用于解释本申请实施例的原理。在这些附图中,类似的附图标记用于表示类似的要素。下面描述中的附图是本申请的一些实施例,而不是全部实施例。对于本领域技术人员来讲,在不付出创造性劳动的前提下,可以根据这些附图获得其他的附图。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate the embodiments of the application and together with the description serve to explain the principles of the embodiments of the application. In the drawings, like reference numerals are used to denote like elements. The drawings in the following description are some embodiments of the present application, but not all embodiments. For those skilled in the art, other drawings can be obtained based on these drawings without any creative work.
图1是根据本申请实施方式的修补算法的验证方法的流程图一;Fig. 1 is a flowchart one of a verification method of a repair algorithm according to an embodiment of the present application;
图2是根据本申请实施方式的失效地址配置过程示意图;FIG. 2 is a schematic diagram of an invalid address configuration process according to an embodiment of the present application;
图3是根据本申请实施方式的失效地址配置过程示意图;FIG. 3 is a schematic diagram of an invalidation address configuration process according to an embodiment of the present application;
图4是根据本申请实施方式的修补算法的验证方法的流程图二;FIG. 4 is a second flow chart of a verification method of a repair algorithm according to an embodiment of the present application;
图5是根据本申请实施方式的失效地址配置过程示意图;FIG. 5 is a schematic diagram of an invalidation address configuration process according to an embodiment of the present application;
图6是根据本申请实施方式的Raw Data文档示意图;Fig. 6 is a schematic diagram of a Raw Data document according to an embodiment of the present application;
图7是根据本申请实施方式的修补算法的验证方法的流程图三;FIG. 7 is a flowchart three of a verification method of a repair algorithm according to an embodiment of the present application;
图8是根据本申请实施方式的修补方案和失效地址的分布图;FIG. 8 is a distribution diagram of repair schemes and failure addresses according to an embodiment of the present application;
图9是根据本申请实施方式的修补算法的验证方法的流程图四;FIG. 9 is a flowchart four of a verification method of a patching algorithm according to an embodiment of the present application;
图10是根据本申请实施方式的修补结果示意图;Fig. 10 is a schematic diagram of repair results according to an embodiment of the present application;
图11是根据本申请实施方式的修补结果示意图;Fig. 11 is a schematic diagram of repair results according to an embodiment of the present application;
图12是根据本申请实施方式的电子设备的结构示意图。FIG. 12 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
具体实施方式detailed description
下面将结合本申请实施例中的附图,对公开实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互任意组合。The following will clearly and completely describe the technical solutions in the disclosed embodiments with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, but not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.
晶粒为一片晶圆(wafer)的最小单元,晶圆经过DRAM的制造工艺加工,在每个晶粒上形成预设数量的DRAM,每个DRAM中包含预设数量的存储单元,每个存储单元被赋予一个存储地址。针对DRAM失效地址的RA算法的验证一般都是在测试机台上进行。一种是先设定晶粒上的失效单元,在测试机台产生失效单元的Raw Data,经RA算法计算得出修补方案,人工比对设定的失效单元和修补方案的匹配度,该验证方式需花费大量时间,易出现遗漏。另一种则直接对wafer造成损坏,执行测试修补,以修补后测试是否出现新的失效单元为基准来进行RA算法的验证。但该验证方式会造成wafer损坏,不能再进行其它测试。且以上两种验证方式都存在耗时、验证不完整、成本大的缺点。A die is the smallest unit of a wafer. The wafer is processed by the DRAM manufacturing process to form a preset number of DRAMs on each die. Each DRAM contains a preset number of storage units. A cell is assigned a memory address. The verification of the RA algorithm for the DRAM failure address is generally carried out on the test machine. One is to first set the failed unit on the die, generate raw data of the failed unit on the test machine, calculate the repair plan through the RA algorithm, and manually compare the matching degree between the set failed unit and the repair plan. This method takes a lot of time and is prone to omissions. The other is to directly cause damage to the wafer, perform a test repair, and verify the RA algorithm based on whether a new failure unit appears in the test after the repair. However, this verification method will cause damage to the wafer, and other tests cannot be performed. Moreover, both of the above two verification methods have the disadvantages of time-consuming, incomplete verification, and high cost.
本申请提出了一种针对DRAM的RA算法的线下验证方案。该方案无需在测试机台上完成,而是通过模拟软件平台模拟配置DRAM失效地址,采用待验证的RA算法对失效地址进行运算,得到失效地址及其修补方案的文档,选择对应的失效地址及修补方案进行修补运算,并基于软件平台对修补结果进行灵活展示,以实现对RA算法的验证。本申请方案不占用测试机台,也不会对wafer造成损坏,减少DRAM生产的成本;同时弥补当前以人工比对方式所出现的遗漏,而造成失效单元修补不完整;可模拟线上多站测试的流 程,充分验证多站修补算法的结果,提高算法验证的效率。This application proposes an offline verification scheme for the RA algorithm of DRAM. This solution does not need to be completed on the test machine, but simulates the DRAM failure address through the simulation software platform, uses the RA algorithm to be verified to calculate the failure address, obtains the failure address and the document of the repair plan, and selects the corresponding failure address and The patching scheme performs patching operations, and flexibly displays the patching results based on the software platform to verify the RA algorithm. This application scheme does not occupy the test machine, and will not cause damage to the wafer, reducing the cost of DRAM production; at the same time, it makes up for the omissions that occur in the current manual comparison method, resulting in incomplete repair of failed units; it can simulate multiple stations on the line The testing process fully verifies the results of the multi-site patching algorithm and improves the efficiency of algorithm verification.
在一个实施例中,如图1所示的修补算法的验证方法,应用于模拟软件平台,包括步骤如下。In one embodiment, the method for verifying a repair algorithm as shown in FIG. 1 is applied to a simulation software platform, and includes the following steps.
步骤101:配置模拟失效的动态随机存取存储器的失效地址。Step 101: Configure the invalidation address of the dynamic random access memory that simulates invalidation.
检测人员在模拟软件平台上选择或者创建待模拟失效的DRAM产品信息,并配置DRAM的失效地址。该失效地址可以为承载DRAM的wafer上位于某晶粒上各存储单元的存储地址。本实施例中对配置失效地址的过程不做限定。例如可采用如下两种方式配置失效地址。The inspector selects or creates the DRAM product information to be simulated to fail on the simulation software platform, and configures the failure address of the DRAM. The failure address may be the storage address of each storage unit located on a certain die on the wafer carrying the DRAM. In this embodiment, the process of configuring the failure address is not limited. For example, the failure address can be configured in the following two ways.
方式一:提供模拟失效的动态随机存取存储器的地址空间及地址输入窗口,并接收基于地址空间在地址输入窗口中输入的失效地址。Method 1: providing an address space and an address input window for simulating a failed DRAM, and receiving a failure address input in the address input window based on the address space.
例如图2所示,在模拟软件平台上提供DRAM的多个存储块(bank),每个bank上包含的存储单元的地址空间为X方向为16位2进制、Y方向为10位2进制,DQ有三位,每读一个存储单元cell(bit)连带之后的7位被读出来,所以就有8位,是2的3次方。图中所示Row Fail为一横行存储单元的存储地址,Col Fail为一竖行存储单元的存储地址,Single Fail为单点存储单元的存储地址。检测人员可根据需求在地址输入窗口中自行输入作为失效单元的单元地址。输入结果样例可如图2中所示。For example, as shown in Figure 2, multiple storage blocks (banks) of DRAM are provided on the simulation software platform, and the address space of the storage units contained in each bank is 16-bit binary in the X direction and 10-bit binary in the Y direction. system, DQ has three bits, and each time a memory unit cell (bit) is read, the subsequent 7 bits are read out, so there are 8 bits, which is 2 to the 3rd power. Row Fail shown in the figure is the storage address of a horizontal storage unit, Col Fail is the storage address of a vertical storage unit, and Single Fail is the storage address of a single-point storage unit. The inspector can input the unit address as the failure unit in the address input window according to the requirement. An example of the input result may be shown in FIG. 2 .
方式二:提供模拟失效的动态随机存取存储器的地址空间的地址阵列,并将从地址阵列中选取的地址确定为失效地址。Method 2: Provide an address array simulating the address space of the failed DRAM, and determine an address selected from the address array as the failed address.
例如图3所示,在模拟软件平台上提供DRAM的多个存储块(bank),每个bank上包含的存储单元的地址空间为X方向为16位2进制、Y方向为10位2进制。这些晶粒上的存储单元的地址空间可以地址阵列的形式显示在模拟软件平台的操作界面上。图中每个小方格既可以代表一个存储单元,也可以代表该存储单元对应的存储地址。检测人员可根据需求在地址阵列中自行勾选出作为失效单元的单元地址。For example, as shown in Figure 3, multiple storage blocks (banks) of DRAM are provided on the simulation software platform, and the address space of the storage unit contained on each bank is 16-bit binary in the X direction and 10-bit binary in the Y direction. system. The address spaces of the storage units on these chips can be displayed on the operation interface of the simulation software platform in the form of address arrays. Each small square in the figure can represent not only a storage unit, but also the storage address corresponding to the storage unit. The inspector can check the unit address as the failed unit in the address array according to the requirement.
步骤102:形成失效地址的Raw Data文档。Step 102: Form a Raw Data file of the invalidation address.
模拟软件平台根据检测人员输入或勾选的失效地址,生成失效地址的原始数据即Raw Data文档。根据实际配置的失效地址数量、划分组的类别等,所生成的Raw Data文档也可以对应为一个,或者多个。The simulation software platform generates the original data of the failure address, that is, the Raw Data file, according to the failure address input or checked by the inspector. According to the number of failure addresses actually configured, the category of the division group, etc., the generated Raw Data files can also correspond to one or more.
步骤103:将Raw Data文档经修补算法进行运算,得到失效地址的地址 文档及修补方案文档。Step 103: the Raw Data file is operated through the repair algorithm to obtain the address file and the repair plan file of the invalid address.
这里的修补算法即为待验证的RA算法,将上述Raw Data文档经RA算法进行运算,可以得到针对失效地址的修补方案。实际运算中,基于RA算法的好坏,并不是每个失效地址都可以运算得到对应的修补方案,有可能部分失效地址不存在对应的修补方案,或者存在修补方案但无法对相应失效地址进行正确修补。因此,本实施例中经修补算法运算后仅是得到具有修补与被修补关系的地址文档及修补方案文档。地址文档可以是按前面失效地址数量、划分组的类别等得到的,包含失效地址的一个或者多个文档。修补方案文档与地址文档一一对应,每个修补方案文档中包含(也可能不包含)用于修补对应地址文档中失效地址的修补方案。The repair algorithm here is the RA algorithm to be verified. The above-mentioned Raw Data file is calculated by the RA algorithm, and the repair solution for the invalid address can be obtained. In actual operation, based on the quality of the RA algorithm, not every failure address can be calculated to obtain the corresponding repair solution. It is possible that there is no corresponding repair solution for some failure addresses, or there is a repair solution but the corresponding failure address cannot be corrected. repair. Therefore, in this embodiment, after the operation of the repairing algorithm, only the address file and the repairing scheme file having the relationship between the repaired and the repaired are obtained. The address file can be obtained according to the number of previously invalid addresses, the category of the group, etc., and contains one or more files of invalid addresses. There is a one-to-one correspondence between the repair plan document and the address document, and each repair plan document includes (or may not include) a repair plan for repairing invalid addresses in the corresponding address file.
在示例性实施方式中,待验证的RA算法可以是按照DRAM产品的类型而研发的多种RA算法,每种RA算法专用于对相应的DRAM类型产品的失效地址进行修补分析。在示例性实施方式中,在执行本步骤之前,可以先获取动态随机存取存储器的产品类型,根据待模拟失效的DRAM的产品类型,可以选择与待模拟失效的DRAM的失效地址更为配的RA算法进行修补分析,从而提高修补分析的准确性。In an exemplary embodiment, the RA algorithm to be verified may be various RA algorithms developed according to the types of DRAM products, and each RA algorithm is dedicated to repairing and analyzing the failure addresses of the corresponding DRAM type products. In an exemplary embodiment, before performing this step, the product type of the dynamic random access memory can be obtained first, and according to the product type of the DRAM to be simulated to fail, the failure address of the DRAM to be simulated to fail can be selected to match more The RA algorithm performs repair analysis, thereby improving the accuracy of repair analysis.
基于此,本步骤可以包括:将Raw Data文档经与产品类型对应的修补算法进行运算,得到失效地址的地址文档及修补方案文档。从而提高失效地址的地址文档及修补方案文档之间的匹配度,提高后续修补操作的正确度。Based on this, this step may include: operating the Raw Data file through the repair algorithm corresponding to the product type to obtain the address file and repair plan file of the invalid address. Therefore, the matching degree between the address file of the invalid address and the repair plan file is improved, and the accuracy of subsequent repair operations is improved.
此外,在对Raw Data文档经修补算法进行运算时,可以采用常规方式或者压缩方式进行运算。其中,常规方式为对每个地址单元均独立测试,分别确定各地址单元是否为失效地址;压缩模式为对关联的多个地址单元一起测试,当该多个地址单元中存在至少一个地址单元为失效地址时,确定该多个地址单元均为失效地址。In addition, when the Raw Data file is operated by the patching algorithm, the operation can be performed in a conventional or compressed manner. Among them, the conventional method is to test each address unit independently to determine whether each address unit is a failure address; the compressed mode is to test the associated multiple address units together, when at least one address unit in the multiple address units is When the address is invalid, it is determined that the plurality of address units are all invalid addresses.
在示例性实施方式中,在执行本步骤之前,可以先获取Raw Data文档的数据格式,该数据格式用于指示在将Raw Data文档经修补算法进行运算时,采用常规方式或者采用压缩方式进行运算。In an exemplary embodiment, before performing this step, the data format of the Raw Data file can be obtained first, and the data format is used to indicate that when the Raw Data file is operated by the patching algorithm, the operation is performed in a conventional manner or in a compressed manner .
在示例性实施方式中,可以在检测人员配置模拟失效的动态随机存取存储器的失效地址之前,模拟软件平台提供用于选择Raw Data文档的数据格式的选择界面,检测人员在界面中选择Raw Data文档的数据格式,从而指示模 拟软件平台采用常规方式或者采用压缩方式进行RA算法的运算。In an exemplary embodiment, the simulation software platform provides a selection interface for selecting the data format of the Raw Data file before the detection personnel configures the invalidation address of the dynamic random access memory of the simulated failure, and the detection personnel selects the Raw Data in the interface. The data format of the document, which instructs the simulation software platform to perform the operation of the RA algorithm in a conventional way or in a compressed way.
步骤104:基于修补方案文档对地址文档中的失效地址进行修补,并展示修补结果。Step 104: Repair the invalid address in the address file based on the repair plan document, and display the repair result.
模拟软件平台在完成RA算法运算得到失效地址的地址文档和修补方案文档后,可以自动根据修补方案文档中的修补方案,对相应地址文档中的失效地址进行修补操作,并将每个地址文档中失效地址是否被正确修补的结果在平台界面上进行展示。或者,模拟软件平台基于检测人员的选择操作对指定地址文档和修补方案文档进行修补操作,并展示修补结果。After the simulation software platform completes the RA algorithm calculation to obtain the address file and repair plan file of the failed address, it can automatically repair the failed address in the corresponding address file according to the repair plan in the repair plan file, and save the address file in each address file. The result of whether the invalid address is corrected is displayed on the platform interface. Alternatively, the simulation software platform performs a patching operation on the specified address document and the patching scheme document based on the selection operation of the inspector, and displays the patching result.
本实施例中,通过模拟软件平台对DRAM的RA算法进行线下验证。利用线下验证方式灵活配置模拟失效的动态随机存取存储器的失效地址;形成失效地址的Raw Data文档;将Raw Data文档经修补算法进行运算,得到失效地址的地址文档及修补方案文档;最后基于修补方案文档对地址文档中的失效地址进行修补,并展示修补结果,从而在不占用测试机台和不对wafer造成损坏的条件下完成RA算法的验证过程,减少DRAM生产的成本;弥补当前以人工比对方式所出现的遗漏,而造成失效单元修补不完整;可模拟线上多站测试的流程,充分验证多站修补算法的结果,提高算法验证的效率。In this embodiment, the RA algorithm of the DRAM is verified offline through a simulation software platform. Use the offline verification method to flexibly configure the failure address of the simulated failure DRAM; form the Raw Data file of the failure address; operate the Raw Data file through the repair algorithm to obtain the address file of the failure address and the repair plan file; finally based on The repair plan document repairs the invalid addresses in the address file and displays the repair results, so as to complete the verification process of the RA algorithm without occupying the test machine and causing damage to the wafer, reducing the cost of DRAM production; making up for the current manual Omissions in the comparison method lead to incomplete repair of failed units; the process of online multi-site testing can be simulated to fully verify the results of multi-site repair algorithms and improve the efficiency of algorithm verification.
在示例性实施方式中,提供了采用多站点多项目的方式配置DRAM的失效地址。如图4所示,步骤101可以包括如下子步骤。In an exemplary embodiment, it is provided to configure the failover address of DRAM in a multi-site multi-item manner. As shown in Fig. 4, step 101 may include the following sub-steps.
子步骤1011:确定产生失效地址的晶粒。Sub-step 1011: Determine the die that generates the failure address.
检测人员在模拟软件平台上选择或者创建待模拟失效的DRAM产品信息后,可以在承载该DRAM产品信息的wafer上选择用于配置失效地址的晶粒。例如可以选择wafer上的n个晶粒作为配置失效地址的晶粒。该n个晶粒分别被标记为:Die 1、Die 2,…Die n。After the inspector selects or creates the DRAM product information to be simulated to fail on the simulation software platform, he can select the die for configuring the failure address on the wafer carrying the DRAM product information. For example, n dies on the wafer may be selected as dies configured with failure addresses. The n grains are marked as: Die 1, Die 2,... Die n.
子步骤1012:确定至少一个测试站点,以及每个测试站点所包含的测试项目。Sub-step 1012: Determine at least one test site and the test items contained in each test site.
为模拟失效地址对应的失效环境,可以模拟配置至少一个测试站点,每个测试站点对应不同的测试阶段(stage),例如:高温测试阶段(stage00)、低温测试阶段(stage01)、老化测试阶段(stage02)。每个测试站点可以包括多个测试项目。例如每个测试站点可以包括m个测试项目。该m个测试项目分别被标记为:测试项目1、测试项目2,…测试项目m。In order to simulate the failure environment corresponding to the failure address, at least one test site can be simulated and configured, and each test site corresponds to a different test stage (stage), for example: high temperature test stage (stage00), low temperature test stage (stage01), aging test stage ( stage02). Each test site can include multiple test items. For example, each test site may include m test items. The m test items are respectively marked as: test item 1, test item 2, . . . test item m.
在示例性实施方式中,检测人员可以选择至少一个测试站点,并为选择的测试站点配置一定数量的测试项目,以用于模拟所配置的失效地址所对应的真实失效环境。In an exemplary embodiment, the inspector may select at least one test site, and configure a certain number of test items for the selected test site, so as to simulate a real failure environment corresponding to the configured failure address.
子步骤1013:从确定的晶粒中选择所属于各测试站点中各测试项目的失效地址。Sub-step 1013: Select the failure address of each test item belonging to each test site from the determined die.
在示例性实施方式中,检测人员从上述确定的晶粒中配置部分地址单元作为失效地址,并将这些失效地址与配置的各测试站点中的测试项目进行关联,从而模拟出实际失效环境中,DRAM产品中的失效地址的失效出处所归属的测试站点及测试项目。In an exemplary embodiment, inspectors configure some address units from the above-mentioned determined die as failure addresses, and associate these failure addresses with the test items in the configured test sites, thereby simulating the actual failure environment, The test site and test item to which the failure source of the failure address in the DRAM product belongs.
例如图5所示,为对多测试站点的多个测试项目配置失效地址的结果操作图。其中,在配置失效地址时,仍可参考前述实施例中,通过手动输入和在地址空间矩阵中勾选两种方式的配置过程,在此对配置过程不做赘述。For example, as shown in FIG. 5 , it is an operation diagram of the result of configuring failure addresses for multiple test items of multiple test sites. Wherein, when configuring the failure address, reference can still be made to the configuration process in the foregoing embodiments, through manual input and checking in the address space matrix, and the configuration process will not be repeated here.
在示例性实施方式中,如图4所示,步骤102可以为:In an exemplary embodiment, as shown in FIG. 4, step 102 may be:
子步骤1021:形成所属于各测试站点中各测试项目的失效地址的Raw Data文档。Sub-step 1021: Form the Raw Data file of the failure address of each test item belonging to each test site.
在示例性实施方式中,在形成失效地址的Raw Data文档时,文档数量及每个文档中包含的失效地址也可以根据失效地址所属的测试站点以及测试项目进行划分。例如图6中所示,所属于任一测试站点的任一测试项目的失效地址唯一包含在一个Raw Data文档中。图中rdm_1.dat中m为测试项目编号,1:Site(存储单元)编号。In an exemplary embodiment, when forming the Raw Data file of the failure address, the number of documents and the failure address contained in each document can also be divided according to the test site and the test item to which the failure address belongs. For example, as shown in Figure 6, the failure address of any test item belonging to any test site is uniquely included in a Raw Data file. In the figure rdm_1.dat, m is the test item number, 1:Site (storage unit) number.
在示例性实施方式中,如图4所示,步骤103可以为:In an exemplary embodiment, as shown in FIG. 4, step 103 may be:
子步骤1031:将Raw Data文档按失效地址所属的测试站点分别进行测试,得到各测试站点所包含的失效地址的地址文档及修补方案文档。Sub-step 1031: Test the Raw Data file according to the test site to which the failure address belongs, and obtain the address file and repair plan document of the failure address contained in each test site.
在示例性实施方式中,在对Raw Data文档中的失效地址进行RA算法计算时,测试人员可以选择分别对所属不同测试站点的Raw Data文档单独执行RA算法,从而根据得到的各测试站点所包含的失效地址的地址文档及修补方案文档,验证RA算法单独应用到各测试站点的修补分析能力。In an exemplary embodiment, when performing RA algorithm calculation on the failure address in the Raw Data file, the tester can choose to separately execute the RA algorithm on the Raw Data files belonging to different test sites, so that according to the results contained in each test site obtained, The address file and repair plan file of the failure address, to verify the repair analysis ability of the RA algorithm alone applied to each test site.
在示例性实施方式中,作为子步骤1031的替代方案,如图7所示,步骤103还可以为:In an exemplary embodiment, as an alternative to substep 1031, as shown in FIG. 7, step 103 may also be:
子步骤1032:将Raw Data文档按失效地址所属的至少两个组合后的测 试站点进行组合测试,得到组合后的测试站点所包含的失效地址的地址文档及修补方案文档。Sub-step 1032: Raw Data file is carried out combination test by at least two combined test sites after failure address belongs, obtains the address file and the repair plan document of the failure address contained in the combined test site.
在示例性实施方式中,在对Raw Data文档中的失效地址进行RA算法计算时,测试人员可以选择将所属不同测试站点的Raw Data文档进行组合后整体执行RA算法,从而根据得到的组合后的测试站点所包含的失效地址的地址文档及修补方案文档,验证RA算法应用到多测试站点联合下的修补分析能力。In an exemplary embodiment, when performing RA algorithm calculation on the failure address in the Raw Data file, the tester can choose to combine the Raw Data files belonging to different test sites and then perform the RA algorithm as a whole, so that according to the obtained combination The address files and repair plan files of the failure addresses contained in the test site verify the repair analysis ability of the RA algorithm applied to the combination of multiple test sites.
如图8所示,在得到失效地址(fail address)的地址文档及修补方案文档(Repair Solution)后,可以地址空间阵列的方式在模拟软件平台中清晰的标识出地址文档及修补方案文档所覆盖的地址单元。这样,在后续对地址文档中的失效地址采用修补方案文档中的修补方案进行修补操作时,可以直接将这两个阵列中标识的地址单元进行覆盖匹配(Cover)得到修补结果。As shown in Figure 8, after obtaining the address file of the fail address and the repair solution file (Repair Solution), the addresses covered by the address file and the repair solution file can be clearly identified in the simulation software platform in the form of an address space array. address unit. In this way, when the invalid address in the address file is subsequently repaired using the repair plan in the repair plan file, the address units identified in the two arrays can be directly covered and matched (Cover) to obtain a repair result.
本实施例中,通过设置多站点多测试项目的方式对DRAM的失效地址进行划分,形成相应的Raw Data文档;针对不同测试站点的Raw Data文档单独进行RA运算,或者对至少两个测试站点的失效地址组合后进行RA运算,从而根据得到的失效地址的地址文档及修补方案文档,验证RA算法应用到单个测试站点或者多测试站点联合下的修补分析能力。In this embodiment, the failure address of DRAM is divided by setting multi-site multi-test items to form corresponding Raw Data files; the Raw Data files of different test sites are used for RA calculations independently, or for at least two test sites. The RA calculation is performed after the failure address is combined, so as to verify the repair analysis ability of the RA algorithm applied to a single test site or a combination of multiple test sites according to the obtained address document and repair plan document of the failure address.
在示例性实施方式中,提供了基于修补方案文档对地址文档中的失效地址进行修补,并展示修补结果的具体实现方式。如图9所示,步骤104可以包括如下子步骤。In an exemplary embodiment, a specific implementation manner of repairing an invalid address in an address file based on a repair plan document and showing a repair result is provided. As shown in Fig. 9, step 104 may include the following sub-steps.
子步骤1041:提供文件选择界面,并基于在该界面选择的失效地址文档及对应的修补方案文档执行修补操作。Sub-step 1041: Provide a file selection interface, and perform a repair operation based on the invalidation address file and the corresponding repair plan file selected on the interface.
在示例性实施方式中,如图10所示,在采用RA算法完成运算后,模拟软件平台会提供选择失效地址文档及对应的修补方案文档的操作界面。检测人员可以在修补方案文档菜单(FU File)中选择修补方案文档,在地址文档菜单(MD File)中选择地址文档;然后点击“EXECUTE”运行修补过程。之后,在操作界面下方就会呈现修补结果信息。In an exemplary embodiment, as shown in FIG. 10 , after the RA algorithm is used to complete the operation, the simulation software platform will provide an operation interface for selecting failure address files and corresponding repair solution files. Detectors can select the patch file in the patch file menu (FU File), select the address file in the address file menu (MD File); then click "EXECUTE" to run the patch process. After that, the repair result information will be displayed at the bottom of the operation interface.
在示例性实施方式中,如图10中所示,展示修补结果的方式为:In an exemplary embodiment, as shown in FIG. 10 , the manner of displaying the repair result is:
提供模拟失效的动态随机存取存储器的地址空间的地址阵列,并在该地址阵列中标识出所选择的失效地址文档是否能被对应的修补方案文档成功修 补的结果。An address array of the address space of the simulated invalid DRAM is provided, and a result of whether the selected invalid address file can be successfully repaired by the corresponding repair solution file is identified in the address array.
在实际进行修补结果展示时,可以通过不同的文字、颜色、符号中的至少一种方式在地址阵列中区别标识出失效地址文档中的失效地址的位置,修补方案文档中修补方案的位置,以及二者是否匹配。这里所谓的匹配为失效地址被修补方案正确修补。例如采用颜色进行标记时,失效地址可以标记为红色,修补方案可以标记为绿色,失效地址与修补方案实现匹配的标记为黄色。In the actual display of repair results, the location of the failure address in the failure address document, the location of the repair solution in the repair solution document, and Whether the two match. The so-called match here means that the invalid address is correctly repaired by the repair scheme. For example, when color is used for marking, the failure address can be marked in red, the repair solution can be marked in green, and the match between the failure address and the repair solution can be marked in yellow.
当检测人员需要对某个晶粒上的修补结果进行重点查看时,可以点击该晶粒对应的阵列位置,如(02,02)位置,之后如图11所示,模拟软件平台将对该阵列位置的修补结果进行细化展示,包括对以上三种颜色的地址单元的统计(COUNT),从而可以更加直观的比对出修补结果。When inspectors need to focus on the repair results on a certain die, they can click on the array position corresponding to the die, such as (02, 02), and then as shown in Figure 11, the simulation software platform will The repair results of the location are displayed in detail, including the statistics (COUNT) of the address units of the above three colors, so that the repair results can be compared more intuitively.
此外,检测人员还可以根据需要在模拟软件平台中执行修补结果的导出操作,模拟软件平台基于对修补结果的导出操作,生成并导出修补结果到指定目录文件。例如,检测人员通过点击“OUTPUT”,将修补结果导出以备后续进行数据统计和分析。In addition, the inspector can also perform the export operation of the repair result in the simulation software platform as needed, and the simulation software platform generates and exports the repair result to a specified directory file based on the export operation of the repair result. For example, by clicking "OUTPUT", the inspector can export the repair result for subsequent data statistics and analysis.
本实施例中,模拟软件平台通过提供文件选择界面,方便检测人员基于在该界面选择的失效地址文档及对应的所述修补方案文档触发执行修补操作。通过在地址阵列中标识出检测人员所选择的失效地址文档是否能被对应的修补方案文档成功修补的结果,从而方便检测人员对RA算法的正确性进行验证。In this embodiment, the simulation software platform provides a file selection interface to facilitate the detection personnel to trigger the execution of the repair operation based on the failure address file selected on the interface and the corresponding repair plan file. By marking in the address array whether the failure address file selected by the inspector can be successfully repaired by the corresponding repair plan document, it is convenient for the inspector to verify the correctness of the RA algorithm.
本申请实施例还提供一种电子设备,如图12所示,包括:至少一个处理器201;以及与所述至少一个处理器201通信连接的存储器202;其中,所述存储器存储有可被所述至少一个处理器201执行的指令,所述指令被所述至少一个处理器201执行,以使所述至少一个处理器201能够执行上述图1、图4、图7、图9所对应方法实施例The embodiment of the present application also provides an electronic device, as shown in FIG. 12 , including: at least one processor 201; and a memory 202 communicatively connected to the at least one processor 201; The instructions executed by the at least one processor 201, the instructions are executed by the at least one processor 201, so that the at least one processor 201 can execute the methods corresponding to the above-mentioned Figures 1, 4, 7, and 9 example
其中,存储器202和处理器201采用总线方式连接,总线可以包括任意数量的互联的总线和桥,总线将一个或多个处理器201和存储器202的各种电路连接在一起。总线还可以将诸如外围设备、稳压器和功率管理电路等之类的各种其他电路连接在一起,这些都是本领域所公知的,因此,本文不再对其进行进一步描述。总线接口在总线和收发机之间提供接口。收发机可以 是一个元件,也可以是多个元件,比如多个接收器和发送器,提供用于在传输介质上与各种其他装置通信的单元。经处理器201处理的数据通过天线在无线介质上进行传输,天线还接收数据并将数据传送给处理器201。Wherein, the memory 202 and the processor 201 are connected by a bus, and the bus may include any number of interconnected buses and bridges, and the bus connects one or more processors 201 and various circuits of the memory 202 together. The bus may also connect together various other circuits such as peripherals, voltage regulators, and power management circuits, all of which are well known in the art and therefore will not be further described herein. The bus interface provides an interface between the bus and the transceivers. A transceiver may be a single element or multiple elements, such as multiple receivers and transmitters, providing a means for communicating with various other devices over a transmission medium. The data processed by the processor 201 is transmitted on the wireless medium through the antenna, and the antenna also receives the data and transmits the data to the processor 201 .
处理器201负责管理总线和通常的处理,还可以提供各种功能,包括定时,外围接口,电压调节、电源管理以及其他控制功能。而存储器202可以被用于存储处理器201在执行操作时所使用的数据。 Processor 201 is responsible for managing the bus and general processing, and may also provide various functions including timing, peripheral interface, voltage regulation, power management and other control functions. And the memory 202 may be used to store data used by the processor 201 when performing operations.
本申请实施例还提供一种计算机可读存储介质,存储有计算机程序。计算机程序被处理器执行时实现上述图1、图4、图7、图9所对应的方法实施例。The embodiment of the present application also provides a computer-readable storage medium storing a computer program. When the computer program is executed by the processor, the above-mentioned method embodiments corresponding to FIG. 1 , FIG. 4 , FIG. 7 , and FIG. 9 are realized.
即,本领域技术人员可以理解,实现上述实施例方法中的全部或部分步骤是可以通过程序来指令相关的硬件来完成,该程序存储在一个存储介质中,包括若干指令用以使得一个设备(可以是单片机,芯片等)或处理器(processor)执行本申请各个实施例所述方法的全部或部分步骤。而前述的存储介质包括:U盘、移动硬盘、只读存储器(ROM,Read-Only Memory)、随机存取存储器(RAM,Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。That is, those skilled in the art can understand that all or part of the steps in the method of the above-mentioned embodiments can be completed by instructing related hardware through a program, the program is stored in a storage medium, and includes several instructions to make a device ( It may be a single-chip microcomputer, a chip, etc.) or a processor (processor) to execute all or part of the steps of the methods described in the various embodiments of the present application. The aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disc, etc., which can store program codes. .
本说明书中各实施例或实施方式采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分相互参见即可。Each embodiment or implementation manner in this specification is described in a progressive manner, each embodiment focuses on the differences from other embodiments, and the same and similar parts of each embodiment can be referred to each other.
在本说明书的描述中,参考术语“实施例”、“示例性的实施例”、“一些实施方式”、“示意性实施方式”、“示例”等的描述意指结合实施方式或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施方式或示例中。In the description of this specification, descriptions with reference to the terms "embodiments", "exemplary embodiments", "some implementations", "exemplary implementations", "examples" and the like mean that the descriptions are described in conjunction with the implementations or examples. A specific feature, structure, material, or characteristic is included in at least one embodiment or example of the present application.
在本说明书中,对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
在本申请的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的 方位构造和操作,因此不能理解为对本申请的限制。In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientation construction and operation, therefore should not be construed as limiting the application.
可以理解的是,本申请所使用的术语“第一”、“第二”等可在本申请中用于描述各种结构,但这些结构不受这些术语的限制。这些术语仅用于将第一个结构与另一个结构区分。It can be understood that the terms "first", "second", etc. used in this application can be used to describe various structures in this application, but these structures are not limited by these terms. These terms are only used to distinguish one structure from another.
在一个或多个附图中,相同的元件采用类似的附图标记来表示。为了清楚起见,附图中的多个部分没有按比例绘制。此外,可能未示出某些公知的部分。为了简明起见,可以在一幅图中描述经过数个步骤后获得的结构。在下文中描述了本申请的许多特定的细节,例如器件的结构、材料、尺寸、处理工艺和技术,以便更清楚地理解本申请。但正如本领域技术人员能够理解的那样,可以不按照这些特定的细节来实现本申请。In one or more drawings, like elements are indicated with like reference numerals. For the sake of clarity, various parts in the drawings are not drawn to scale. Also, some well-known parts may not be shown. For simplicity, the structure obtained after several steps can be described in one figure. In the following, many specific details of the present application, such as device structures, materials, dimensions, processing techniques and techniques, are described for a clearer understanding of the present application. However, as will be understood by those skilled in the art, the application may be practiced without these specific details.
最后应说明的是:以上各实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述各实施例对本申请进行了详细的说明,本领域技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit it; although the application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some or all of the technical features; these modifications or replacements do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
工业实用性Industrial Applicability
本申请实施例所提供的修补算法的验证方法、电子设备及存储介质中,通过模拟软件平台对DRAM的RA算法进行线下验证。利用线下验证方式灵活配置模拟失效的动态随机存取存储器的失效地址;形成失效地址的Raw Data文档;将Raw Data文档经修补算法进行运算,得到失效地址的地址文档及修补方案文档;最后基于修补方案文档对地址文档中的失效地址进行修补,并展示修补结果,从而在不占用测试机台和不对wafer造成损坏的条件下完成RA算法的验证过程,减少DRAM生产的成本;弥补当前以人工比对方式所出现的遗漏,而造成失效单元修补不完整;可模拟线上多站测试的流程,充分验证多站修补算法的结果,提高算法验证的效率。In the method for verifying the repair algorithm, the electronic device, and the storage medium provided in the embodiments of the present application, the RA algorithm of the DRAM is verified offline through a simulation software platform. Use the offline verification method to flexibly configure the failure address of the simulated failure DRAM; form the Raw Data file of the failure address; operate the Raw Data file through the repair algorithm to obtain the address file of the failure address and the repair plan file; finally based on The repair plan document repairs the invalid addresses in the address file and displays the repair results, so as to complete the verification process of the RA algorithm without occupying the test machine and causing damage to the wafer, reducing the cost of DRAM production; making up for the current manual Omissions in the comparison method lead to incomplete repair of failed units; the process of online multi-site testing can be simulated to fully verify the results of multi-site repair algorithms and improve the efficiency of algorithm verification.

Claims (15)

  1. 一种修补算法的验证方法,应用于模拟软件平台,包括:A method for verifying patching algorithms, applied to a simulation software platform, comprising:
    配置模拟失效的动态随机存取存储器的失效地址;Configure the invalidation address of the dynamic random access memory that simulates invalidation;
    形成所述失效地址的Raw Data文档;Form the Raw Data file of the invalidation address;
    将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档;Operating the Raw Data file through a repair algorithm to obtain the address file and repair plan file of the failure address;
    基于所述修补方案文档对所述地址文档中的失效地址进行修补,并展示修补结果。The invalid address in the address file is repaired based on the repair scheme document, and a repair result is displayed.
  2. 根据权利要求1所述的方法,其中,所述配置模拟失效的动态随机存取存储器的失效地址,包括:The method according to claim 1, wherein said configuring the invalidation address of the simulated invalidation dynamic random access memory comprises:
    提供所述模拟失效的动态随机存取存储器的地址空间及地址输入窗口,并接收基于所述地址空间在所述地址输入窗口中输入的所述失效地址。An address space and an address input window of the simulated failure DRAM are provided, and the failure address input in the address input window based on the address space is received.
  3. 根据权利要求1所述的方法,其中,所述配置模拟失效的动态随机存取存储器的失效地址,包括:The method according to claim 1, wherein said configuring the invalidation address of the simulated invalidation dynamic random access memory comprises:
    提供所述模拟失效的动态随机存取存储器的地址空间的地址阵列,并将从所述地址阵列中选取的地址确定为所述失效地址。An address array of the address space of the simulated failure DRAM is provided, and an address selected from the address array is determined as the failure address.
  4. 根据权利要求1所述的方法,所述方法还包括:The method according to claim 1, said method further comprising:
    获取所述动态随机存取存储器的产品类型;Obtaining the product type of the DRAM;
    所述将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档,包括:The described Raw Data file is operated through a repair algorithm to obtain the address file and the repair plan file of the failure address, including:
    将所述Raw Data文档经与所述产品类型对应的修补算法进行运算,得到所述失效地址的地址文档及修补方案文档。The Raw Data file is operated through the repair algorithm corresponding to the product type to obtain the address file and repair plan file of the failure address.
  5. 根据权利要求1所述的方法,所述将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档之前,还包括:According to the method according to claim 1, before the described Raw Data file is operated through a patching algorithm, and the address file and the patching scheme file of the invalidation address are obtained, it also includes:
    获取所述Raw Data文档的数据格式,所述数据格式用于指示在将所述Raw Data文档经所述修补算法进行运算时,采用常规方式或者采用压缩方式进行运算。Obtain the data format of the Raw Data file, and the data format is used to indicate that when the Raw Data file is operated by the repair algorithm, the operation is performed in a conventional manner or in a compressed manner.
  6. 根据权利要求1-5任一项所述的方法,其中,所述配置模拟失效的动态随机存取存储器的失效地址,包括:The method according to any one of claims 1-5, wherein said configuring the invalidation address of the simulated invalidation dynamic random access memory comprises:
    确定产生所述失效地址的晶粒;determining the die generating the failure address;
    确定至少一个测试站点,以及每个所述测试站点所包含的测试项目;Determine at least one test site, and the test items included in each test site;
    从确定的所述晶粒中选择所属于各所述测试站点中各测试项目的失效地址。Selecting failure addresses belonging to each test item in each of the test stations from the determined dies.
  7. 根据权利要求6所述的方法,其中,所述形成所述失效地址的Raw Data文档,包括:The method according to claim 6, wherein the Raw Data file forming the failure address comprises:
    形成所属于各所述测试站点中各测试项目的所述失效地址的Raw Data文档。Form the Raw Data file of the failure addresses belonging to each test item in each of the test sites.
  8. 根据权利要求7所述的方法,其中,所述将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档,包括:The method according to claim 7, wherein said Raw Data file is operated through a repair algorithm to obtain an address file and a repair plan file of said failure address, including:
    将所述Raw Data文档按所述失效地址所属的测试站点分别进行运算,得到各所述测试站点所包含的所述失效地址的地址文档及修补方案文档。The Raw Data file is respectively calculated according to the test site to which the failure address belongs, to obtain the address file and the repair plan file of the failure address contained in each of the test sites.
  9. 根据权利要求7所述的方法,其中,所述将所述Raw Data文档经修补算法进行运算,得到所述失效地址的地址文档及修补方案文档,包括:The method according to claim 7, wherein said Raw Data file is operated through a repair algorithm to obtain an address file and a repair plan file of said failure address, including:
    将所述Raw Data文档按所述失效地址所属的至少两个组合后的测试站点进行组合运算,得到组合后的所述测试站点所包含的所述失效地址的地址文档及修补方案文档。The Raw Data file is combined according to at least two combined test sites to which the failure address belongs, to obtain the address file and the repair plan file of the failure address contained in the combined test site.
  10. 根据权利要求1所述的方法,其中,所述基于所述修补方案文档对所述地址文档中的失效地址进行修补,并展示修补结果,包括:The method according to claim 1, wherein said repairing the failure address in said address file based on said repair plan document, and displaying a repair result, comprises:
    提供文件选择界面,并基于在该界面选择的所述失效地址文档及对应的所述修补方案文档执行修补操作;Provide a file selection interface, and perform a repair operation based on the invalidation address file and the corresponding repair plan file selected on the interface;
    展示修补结果。Display the repair result.
  11. 根据权利要求10所述的方法,其中,所述展示修补结果包括:The method according to claim 10, wherein said displaying repair results comprises:
    提供所述模拟失效的动态随机存取存储器的地址空间的地址阵列,并在该地址阵列中标识出所选择的失效地址文档是否能被所述对应的修补方案文档成功修补的结果。An address array of the address space of the simulated failure DRAM is provided, and a result of whether the selected failure address file can be successfully repaired by the corresponding repair solution file is identified in the address array.
  12. 根据权利要求11所述的方法,其中,所述在该地址阵列中标识出所选择的失效地址文档是否能被所述对应的修补方案文档成功修补的结果,包括:The method according to claim 11, wherein the result of identifying in the address array whether the selected failure address file can be successfully repaired by the corresponding repair solution file includes:
    通过不同的文字、颜色、符号中的至少一种方式在所述地址阵列中区别 标识出失效地址文档中的失效地址的位置,所述修补方案文档中修补方案的位置,以及二者是否匹配。The location of the failure address in the failure address file, the location of the repair solution in the repair solution file, and whether the two match are identified in the address array by at least one of different text, color, and symbols.
  13. 根据权利要求1所述的方法,所述方法还包括:The method according to claim 1, said method further comprising:
    基于对修补结果的导出操作,生成并导出修补结果到指定目录文件。Based on the export operation of the repair result, generate and export the repair result to the specified directory file.
  14. 一种电子设备,包括:An electronic device comprising:
    至少一个处理器;以及,at least one processor; and,
    与所述至少一个处理器通信连接的存储器;其中,a memory communicatively coupled to the at least one processor; wherein,
    所述存储器存储有可被所述至少一个处理器执行的指令,所述指令被所述至少一个处理器执行,以使所述至少一个处理器能够执行如权利要求1至13中任一项所述的修补算法的验证方法。The memory stores instructions executable by the at least one processor, the instructions are executed by the at least one processor, so that the at least one processor can perform the operation described in any one of claims 1 to 13 The verification method of the patching algorithm described above.
  15. 一种计算机可读存储介质,存储有计算机程序,所述计算机程序被处理器执行时实现权利要求1至13中任一项所述的修补算法的验证方法。A computer-readable storage medium storing a computer program, the computer program implementing the method for verifying the repair algorithm according to any one of claims 1 to 13 when the computer program is executed by a processor.
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