WO2023277083A1 - はんだバンプ形成方法 - Google Patents

はんだバンプ形成方法 Download PDF

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Publication number
WO2023277083A1
WO2023277083A1 PCT/JP2022/026029 JP2022026029W WO2023277083A1 WO 2023277083 A1 WO2023277083 A1 WO 2023277083A1 JP 2022026029 W JP2022026029 W JP 2022026029W WO 2023277083 A1 WO2023277083 A1 WO 2023277083A1
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WIPO (PCT)
Prior art keywords
solder
solder particles
electrodes
particles
solder bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/026029
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English (en)
French (fr)
Japanese (ja)
Inventor
敏光 森谷
邦彦 赤井
勝将 宮地
純一 欠畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Showa Denko Materials Co Ltd
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Filing date
Publication date
Application filed by Showa Denko Materials Co Ltd filed Critical Showa Denko Materials Co Ltd
Priority to CN202280045863.3A priority Critical patent/CN117581343A/zh
Priority to JP2023532032A priority patent/JP7831484B2/ja
Priority to KR1020247002224A priority patent/KR20240027705A/ko
Publication of WO2023277083A1 publication Critical patent/WO2023277083A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/011—Apparatus therefor
    • H10W72/0112—Apparatus for manufacturing bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/016—Manufacture or treatment of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts

Definitions

  • the present disclosure relates to a solder bump formation method.
  • flip-chip mounting has become known as one of the methods for high-density mounting of electronic components.
  • solder bumps are formed in advance on electrodes provided on one circuit member, and the electrodes of one circuit member and the electrodes of the other circuit member are joined by melting the solder bumps. Thereby, a connection structure between the circuit members is formed.
  • solder bump formation method As a technique for forming solder bumps on electrodes, for example, there is a solder bump formation method described in Patent Document 1.
  • a positioning plate having a plurality of recesses corresponding to the mutual intervals of the electrodes of the substrate is prepared, and solder particles are arranged in each recess of the positioning plate.
  • a transfer roll having an adhesive surface on the outer peripheral surface is rolled on the surface of the positioning plate to transfer the solder particles to the adhesive surface of the transfer roll. Then, by rolling the transfer roll on the electrode of the substrate provided with the adhesive, the solder particles are transferred from the transfer roll to the electrode of the substrate.
  • the heights of the solder balls protruding from the concave portions of the positioning plate are uniform from the viewpoint of ensuring the reliability of the transfer of the solder particles to the electrodes. is preferred.
  • minute solder particles that are used for connecting electrodes at micro-level intervals it is difficult to align the shape of the solder particles, and the transfer of the solder particles to the electrodes cannot be ensured. The problem was that it was difficult to secure the collateral.
  • the present disclosure has been made to solve the above problems, and an object of the present disclosure is to provide a solder bump formation method that can ensure the reliability of transferring solder particles to electrodes even if the shape of the solder particles is not uniform. .
  • a solder bump formation method is a solder bump formation method for forming a solder bump on an electrode of a circuit member, which has a plurality of recesses, and a constituent part of the recess deforms at the melting point of solder particles.
  • solder particles are held in a plurality of concave portions of the solder bump forming member, and heat and pressure are applied together with the electrodes to be transferred, thereby forming solder bumps on the electrodes.
  • the portion forming the recess in the solder bump forming member has a deformable portion that is deformable at the melting point of the solder particles.
  • the electrode may be heated to a temperature equal to or higher than the melting point of the solder particles while the electrode is pressed against the solder bump forming member. In this case, since the solder particles are melted and the deformed portion is deformed while the solder particles are sandwiched between the electrodes and the solder bump forming members, displacement of the solder bumps formed on the electrodes can be suppressed. Therefore, it is possible to form the solder particles at the target positions on the electrodes with higher accuracy.
  • a single solder particle may be placed in each of the plurality of recesses.
  • solder particles having a relatively large particle size can be transferred to the electrode with a certain degree of certainty.
  • a plurality of solder particles may be arranged in each of the plurality of recesses. In this case, it becomes easy to adjust the volume of the solder particles held in the recesses, and it becomes easy to adjust the size and height of the solder bumps formed on the electrodes within a certain range. Moreover, the probability of contact between the electrodes and the solder particles can be increased, and solder bumps can be formed on the electrodes more reliably.
  • solder particles V The value may be 20% or less. As a result, it is possible to sufficiently secure conduction reliability and insulation reliability in connection of circuit members using solder bumps.
  • the average particle size of the solder particles may be 1 ⁇ m to 35 ⁇ m. When using fine solder particles in such a range, it is generally difficult to align the shape of the solder particles. can be guaranteed.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of a solder bump forming member according to an embodiment of the present disclosure
  • FIG. (a) and (b) are diagrams schematically showing an example of a configuration of a solder bump forming apparatus.
  • FIG. 3 is a schematic cross-sectional view showing an example of the configuration of a connection structure; 4 is a flow chart showing an example of a method of forming solder bumps;
  • FIG. 4 is a schematic cross-sectional view showing a process of forming solder bumps;
  • FIG. 6 is a schematic cross-sectional view showing a step subsequent to FIG. 5;
  • FIG. 7 is a schematic cross-sectional view showing a step subsequent to FIG. 6;
  • FIG. 8 is a schematic cross-sectional view showing a step subsequent to FIG. 7
  • FIG. 9 is a schematic cross-sectional view showing a step subsequent to FIG. 8
  • (a) to (c) are schematic cross-sectional views showing modifications of the solder bump forming member.
  • (a) and (b) are schematic main-part enlarged cross-sectional views showing modifications of solder particles.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of a solder bump forming member according to one embodiment of the present disclosure.
  • a solder bump forming member 1 shown in FIG. 1 is a member used, for example, when solder bumps are formed on electrodes of a circuit member.
  • the solder bump forming member 1 has a body portion 2 .
  • the body portion 2 has, for example, a rectangular shape in a plan view, and has a first surface 2a and a second surface 2b opposite to the first surface 2a.
  • a plurality of recesses 3 for holding solder particles S1 are provided on the first surface 2a side of the main body 2.
  • These concave portions 3 can be formed using known methods such as imprinting, photolithography, machining, and laser processing.
  • the depressions 3 can be formed with high precision in a relatively short process by pressing a desired mold.
  • the size (width, volume, depth, etc.) of the recess 3 is appropriately set according to the size of the solder particles S1.
  • the planar shape of the recess 3 is, for example, circular.
  • the planar shape of the recess 3 may be a circular shape, or various other shapes such as an ellipse, a triangle, a quadrangle, and a polygon.
  • the cross-sectional shape of the recess 3 is rectangular in the example of FIG.
  • the cross-sectional shape of the concave portion 3 may be tapered such that the opening area expands from the bottom surface 3b side toward the opening surface side (first surface 2a side).
  • the bottom surface 3b of the recess 3 is not limited to a flat surface, and may be, for example, a concave curved surface.
  • an alignment mark 4 may be provided on the first surface 2a side of the body portion 2 .
  • the alignment mark 4 is formed by, for example, an uneven shape provided on the first surface 2a of the main body 2, printing with ink or pigment, printing of an inorganic material by plating or sputtering, baking with laser, or the like.
  • the alignment mark 4 has, for example, a circular shape, a double circular shape, a multiple circular shape, a triangular shape, a rectangular shape, a polygonal shape, or a multiple polygonal shape thereof in plan view.
  • the alignment mark 4 may be made of a magnetic material or a material that absorbs, reflects, or diffracts electromagnetic waves, and the shape in this case is not particularly limited.
  • One or more alignment marks 4 may be provided on the side of the first surface 2a, but by providing a plurality of alignment marks 4, it is possible to further improve the accuracy of alignment. Further, the alignment mark 4 may be further provided on the second surface 2b side of the body portion 2, for example, when the body portion 2 is transparent.
  • the body portion 2 may be configured to include a deformable portion 6 including the first surface 2a and a base portion 7 that configures the second surface 2b side.
  • the deformable portion 6 is a portion that constitutes at least the first surface 2a side of the recessed portion 3, and extends from the first surface 2a in the depth direction of the recessed portion 3 with a thickness of 1/3 or more of the depth D of the recessed portion 3. It may be provided, may be provided with a thickness of 1/2 or more, or may be provided with a thickness of 2/3 or more. In the example of FIG. 1, the thickness T of the deformed portion 6 is equal to the depth D of the concave portion 3 .
  • the entire partition wall 8 separating the adjacent recesses 3, 3 serves as the deformed portion 6, and the inner wall surface 3a of the recess 3 is formed by the deformed portion 6, while the bottom surface 3b of the recess 3 is formed by the base portion 7. consists of
  • the width of the partition wall 8 (the distance between the adjacent recesses 3, 3) is not particularly limited, but can be, for example, 0.1 times or more the average particle diameter of the solder particles held in the recesses 3. .
  • the width of the partition wall 8 may be 0.2 times or more, or 0.3 times or more the average particle diameter of the solder particles held in the recesses 3 .
  • the distance between the recesses 3, 3 is defined by the shortest distance between the opening edge of one recess 3 and the opening edge of the other recess 3, for example.
  • the deformable portion 6 is formed of an elastic body 9 that is deformable at the melting point of the solder particles S1 held in the recess 3, for example. For this reason, the deformable portion 6 is elastically deformable in the direction of compression when the electrode to be formed is pressed against it during solder bump formation.
  • the melting point of the solder particles S1 here means that an endothermic peak occurs first when DSC measurement is performed using a DSC (differential scanning calorimeter) at a heating rate of 10° C./min in a He gas flow. temperature.
  • the bulk elastic modulus of the elastic body 9 at the melting point of the solder particles S1 may be, for example, 0.5 GPa or more and 5 GPa or less.
  • the bulk elastic modulus of the elastic body 9 at the melting point of the solder particles S1 may be, for example, 0.5 GPa or more and 3 GPa or less, or may be 0.8 GPa or more and 2 GPa or less.
  • Examples of the elastic body 9 forming the deformable portion 6 include a photocurable material, a thermosetting material, and a thermoplastic material.
  • Examples of the elastic body 9 forming the deformable portion 6 include resin, polymer, rubber, elastomer, and mixtures thereof.
  • the elastic body 9 constituting the deformation portion 6 may be polyethylene terephthalate (volume modulus at melting point: 0.6 GPa) or acrylic (melting point: 0.6 GPa). Bulk modulus: 1 GPa) and PMMA (bulk modulus at melting point: 1 GPa) can be used.
  • solder particles S1 is SnAgCu (melting point: 217° C.)
  • polyimide volume modulus at melting point: 1 GPa
  • the elastic body 9 forming the deformable portion 6 can be used as the constituent material of the solder particles S1 .
  • the base portion 7 is a portion that constitutes the second surface 2b side of the main body portion 2 .
  • the base portion 7 is made of a material having a bulk elastic modulus higher than that of the deformation portion 6 at the melting point of the solder particles S1. Therefore, the base portion 7 contributes to the shape retention of the solder bump forming member 1 when solder bumps are formed.
  • the bulk elastic modulus of the base portion 7 at the melting point of the solder particles S1 is, for example, 1 GPa or more.
  • the bulk elastic modulus of the base portion 7 at the melting point of the solder particles S1 may be, for example, 3 GPa or more, or may be 5 GPa or more.
  • constituent materials of the base portion 7 include inorganic materials such as silicon, various ceramics, glass, and stainless steel, and organic materials such as various resins. Further, the constituent material of the base portion 7 may be a material having high light transmittance. Examples of such materials include polyethylene terephthalate, transparent (colorless) polyimide, and polyamide. The constituent material of the base portion 7 may be a heat-resistant material that does not deteriorate at the melting point of the solder particles S1. The constituent material of the base portion 7 may be a material that does not change by alloying or reacting with the material that constitutes the solder particles S1.
  • the constituent material of the base portion 7 for example, polyethylene terephthalate, polyethylene naphthalate, vinyl chloride resin, polystyrene, polyethylene polyphenylene sulfide, polycarbonate, etc. can be used as long as they are in the form of a flexible film. Moreover, from the viewpoint of improving the handleability of the base portion 7, deformation can be suppressed by increasing the thickness of the above-mentioned material. In addition, from the viewpoint of improving the positional accuracy when transferring the solder particles S1 onto the electrode, it is possible to use engineering plastics, super engineering plastics, materials obtained by compounding fillers and fibers with general-purpose plastics mentioned above, and inorganic materials. can be done. For example, polyamide, polyacetal, polycarbonate, polyphenylene sulfide, polyimide, polyetherimide, polyamideimide, polysulfone, polyetheretherketone and the like can be used.
  • the constituent material of the solder particles S1 is SnBi (melting point: 139° C.)
  • the constituent material of the base portion 7 is, for example, glass (volume modulus at melting point: 40 GPa), silicon wafer (volume modulus at melting point: 40 GPa) and stainless steel (bulk modulus at melting point: 165 GPa) can be used.
  • the constituent material of the solder particles S1 is SnAgCu (melting point: 217° C.)
  • the constituent material of the base portion 7 is, for example, glass (volume modulus at melting point: 40 GPa), silicon wafer (volume modulus at melting point: 40 GPa), stainless steel (volume modulus at melting point: 165 GPa), and aluminum (volume modulus at melting point: 75 GPa) can be used.
  • the deformation portion 6 and the base portion 7 may be made of the same material system.
  • the bulk modulus can be adjusted by varying the degree of cross-linking, adding reinforcing materials such as fillers and fibers, and kneading other materials.
  • the deformable portion 6 may be made of a thermosetting epoxy resin
  • the base portion 7 may be made of the thermosetting epoxy resin added with glass fiber to reinforce the bulk elastic modulus.
  • the deformable portion 6 may be made of a photocurable acrylic resin
  • the base portion 7 may be made of polyethylene terephthalate.
  • concave portions 3 can be formed in the photocurable acrylic resin by applying an uncured photocurable acrylic resin to a stamper having convex shapes, irradiating light while pressing polyethylene terephthalate, and then removing the stamper. . With this method, the body portion 2 having the continuous roll-shaped concave portion 3 can be obtained.
  • the degree of cross-linking can be adjusted, and the bulk elastic modulus can be adjusted.
  • the base portion 7 may be made of an inorganic material.
  • the deformable portion 6 may be made of a photocurable acrylic resin (volume modulus: 0.1 GPa), and the base portion 7 may be made of glass (volume modulus: 40 GPa).
  • a sufficient bulk elastic modulus at the melting point of the base portion 7 can be ensured, and the alignment marks 4 can be used to improve the positional accuracy when the solder particles S1 are transferred to the electrodes.
  • the base portion 7 is unlikely to be deformed, so that the distortion and elongation of the main body portion 2 as a whole can be suppressed. Also, it is possible to use the main body 2 repeatedly.
  • the base portion 7 is made of a silicon wafer and a photosensitive material is used to form the deformation portion 6, the formation of the concave portion 3 is facilitated.
  • a photosensitive material for example, acrylic, epoxy, polyimide, or a mixture thereof can be used as the photosensitive material.
  • the bulk elastic modulus K of the deformation portion 6 and the base portion 7 can be measured by, for example, a mechanical test method, a resonance method, or an ultrasonic pulse method.
  • a nanoindenter and a surface hardness tester are used.
  • a heating stage is attached to a surface hardness tester (manufactured by Fischer Instruments), the deformation portion 6 and the base portion 7 are placed on the heating stage, the stage is heated, and the deformation portion 6 and the base portion 7 are heated to a predetermined temperature. do.
  • the bulk modulus can be calculated by bringing an indenter into contact with the surface of the object to be measured and obtaining a stress-strain curve.
  • solder particles S1 are individually held in each of the plurality of recesses 3.
  • the solder particles S1 in the recesses 3 are in contact with at least the bottom surface 3b of the recesses 3.
  • Solder particles S1 in recess 3 may be in contact with inner wall surface 3a of recess 3 .
  • all the solder particles S1 are positioned within the recesses 3, and the tops of the solder particles S1 do not protrude outside the opening surfaces of the recesses 3.
  • D is the depth of the concave portion 3
  • H is the height of the solder particles S1 (the height from the bottom surface 3b)
  • the ratio of the height of the solder particles S1 to the depth D of the concave portion 3 is not particularly limited, but considering the amount of deformation of the deformable portion 6 in the compression direction, it may be 0.3 to 1.5, for example. By setting the ratio to 0.3 or more, it is possible to more reliably bring the electrode and the solder particles S1 into contact when the electrode is pressed. By setting the ratio to 1.5 or less, it is possible to suitably prevent the solder particles S1 from dropping out of the recesses 3 . In addition, it is possible to prevent the solder particles S1 from protruding from the concave portions 3 during transfer, and to prevent the solder particles S1 from bonding to each other between the adjacent concave portions 3,3.
  • the ratio of the height of the solder particles S1 to the depth D of the recesses 3 may be 0.5-1.2, or may be 0.6-1.
  • the solder particles S1 contain, for example, tin or a tin alloy.
  • Tin alloys include, for example, In—Sn alloy, In—Sn—Ag alloy, Sn—Au alloy, Sn—Bi alloy, Sn—Bi—Ag alloy, Sn—Ag alloy, Sn—Ag—Cu alloy, Sn—Cu alloys and the like.
  • the solder particles S1 may contain indium or an indium alloy. Examples of indium alloys include In--Bi alloys and In--Ag alloys.
  • the solder particles S1 may contain one or more elements selected from Ag, Cu, Ni, Bi, Zn, Pd, Pb, Au, Sb, Ge, Mn, Co, Si, Al, P and B.
  • the solder particles S1 may contain Ag or Cu among the above elements from the viewpoint of obtaining good conduction reliability. By including Ag or Cu in the solder particles S1, the melting point of the solder particles S1 can be lowered to about 220° C., and the bonding strength with the electrode can be improved.
  • the average particle size of the solder particles S1 is, for example, 35 ⁇ m or less.
  • the average particle size of the solder particles S1 may be 30 ⁇ m or less, 25 ⁇ m or less, 20 ⁇ m or less, or 15 ⁇ m or less.
  • the average particle size of the solder particles S1 is, for example, 1 ⁇ m or more.
  • the average particle size of the solder particles S1 may be 2 ⁇ m or more, 3 ⁇ m or more, or 5 ⁇ m or more.
  • the average particle size of the solder particles S1 can be measured using various methods according to the size. Examples of measurement methods include dynamic light scattering method, laser diffraction method, centrifugal sedimentation method, electrical detection band method, resonance mass measurement method, and the like. Other measurement methods include a method of measuring particle size based on images obtained by an optical microscope, an electron microscope, or the like. Specific devices include flow-type particle image analyzers, microtracks, coulter counters, and the like.
  • the average particle diameter of the solder particles S1 is the projected area circle equivalent diameter (a circle having an area equal to the projected area of the particles) when the solder particles S1 are observed from the direction perpendicular to the first surface 2a of the solder bump forming member 1. diameter). When a single solder particle S1 is arranged in each of the plurality of recesses 3, the size (average particle diameter) of the solder particle S1 may be uniform.
  • the C.I. of solder particles S1 V is a value calculated by dividing the standard deviation of the particle size measured by the method described above by the average particle size and multiplying by 100.
  • the C.I. V. The value may be 20% or less from the viewpoint of achieving better electrical conductivity reliability and insulation reliability.
  • C. of solder particles S1. V. The value may be 10% or less, or 7% or less.
  • the lower limit of the value is not particularly limited.
  • the C.I. V. The value may be 1% or more, or 2% or more.
  • solder bump forming member Although one embodiment of the solder bump forming member has been described above, the solder bump forming member of the present disclosure is not limited to the above embodiment. [Solder bump forming equipment]
  • FIGS. 2(a) and 2(b) are schematic diagrams showing an example of the configuration of a solder bump forming apparatus.
  • FIG. 2(a) is a side view
  • FIG. 2(b) is a plan view.
  • the solder bump forming apparatus 11 includes a horizontally displaceable stage 12, a first supply section 13 for supplying the solder bump forming members 1, A second supply unit 14 for supplying the circuit member 21 , imaging devices 15 A and 15 B, and a heating and pressurizing head 16 are provided.
  • the solder bump forming apparatus 11 electrically connects the circuit member 21 on which the solder bump S2 is formed to another circuit member 31 as a post-process of forming the solder bump S2 (see FIG. 9). It has a function of forming a connection structure 41 (see FIG. 3).
  • the solder bump forming apparatus 11 further includes a third supply section 17 for supplying another circuit member 31 .
  • the operation of the solder bump forming device 11 is controlled by a controller (not shown).
  • the function of forming the connection structure 41 may not necessarily be integrated with the solder bump forming apparatus 11, and may be configured as an independent apparatus.
  • the stage 12 has a mounting area R1 on which the circuit member 21 supplied from the second supply unit 14 is mounted, a first implementation area (implementation area) R2 on which the solder bumps S2 are formed, A second implementation region R3 is provided in which the formation of the connection structure 41 is implemented.
  • the imaging devices 15A and 15B are parts for reading the alignment marks 4 of the solder bump forming member 1 and the alignment marks (not shown) of the circuit members 21 and 31 .
  • the imaging device 15A is arranged on the front surface side of the stage 12 (the setting surface side of the first implementation region R2 and the second implementation region R3), and the imaging device 15B is arranged on the rear surface side of the stage 12.
  • the imaging device 15B may be incorporated in the stage 12.
  • the stage 12 is displaced according to the results of reading the alignment marks by the imaging devices 15A and 15B to align the solder bump forming member 1 and the circuit member 21, and position the circuit member 21A with solder bumps and the circuit member 31. carry out
  • the heating and pressurizing head 16 is a part that performs heating and pressurization in the first implementation region R2 and the second implementation region R3.
  • the heating and pressurizing head 16 has a suction function, and transfers the circuit member 21 from the placement area R1 to the first implementation area R2 and transfers the circuit member 21 from the first implementation area R2 to the second implementation area R3. Transfer of the circuit member 21A with solder bumps and transfer of the obtained connection structure 41 are carried out.
  • the heating and pressurizing head 16 is configured to be vertically movable with respect to the stage 12, and is lowered toward the stage 12 to heat and pressurize when forming the solder bumps S2 and to form the connection structure 41. Carry out heating and pressurization when doing.
  • solder bump forming apparatus Although one embodiment of the solder bump forming apparatus has been described above, the solder bump forming apparatus of the present disclosure is not limited to the above embodiment. [Connection structure]
  • FIG. 3 is a schematic cross-sectional view showing an example of the configuration of the connection structure.
  • the connection structure 41 is configured by electrically connecting the electrodes 22 of one circuit member 21 and the electrodes 32 of the other circuit member 31 via solder bumps S2.
  • the space between one circuit member 21 and the other circuit member 21 is filled with an underfill material 42 whose main ingredient is, for example, epoxy resin.
  • the underfill material 42 is formed to cover the electrodes 22 and 32 and the solder bumps S2 between the electrodes 22 and 32, for example.
  • connection structure 41 includes connection portions for semiconductor memories, semiconductor logic chips, etc., connection portions for primary and secondary mounting of semiconductor packages, junctions for CMOS image elements, laser elements, LED light emitting elements, and the like. devices such as cameras, sensors, liquid crystal displays, personal computers, mobile phones, smart phones, and tablets using
  • circuit members 21 and 31 include IC chips (semiconductor chips), resistor chips, capacitor chips, chip parts such as driver ICs, and rigid package substrates. These circuit members have circuit electrodes, and generally have a large number of circuit electrodes.
  • the substrate having a plurality of electrodes on its surface include wiring substrates such as flexible tape substrates having metal wiring, flexible printed wiring boards, and glass substrates on which indium tin oxide (ITO) is deposited.
  • ITO indium tin oxide
  • the electrodes 22 and 32 include copper, copper/nickel, copper/nickel/gold, copper/nickel/palladium, copper/nickel/palladium/gold, copper/nickel/gold, copper/palladium, copper/palladium/ Electrodes of gold, copper/tin, copper/silver, indium tin oxide, and the like.
  • the electrodes 22 and 32 can be formed using techniques such as electroless plating, electrolytic plating, sputtering, and etching of metal foil.
  • connection structure of the present disclosure is not limited to the above embodiment. [Method of forming solder bumps]
  • FIG. 4 is a flow chart showing an example of a solder bump formation method.
  • the flow chart shown in the figure shows the process of forming the solder bumps S2 using the solder bump forming apparatus 11 described above, and the process of forming the connection structure 41 subsequent to the formation of the solder bumps S2 is also shown. The details of each process involved will be described with reference to FIGS. 5 to 9 as appropriate.
  • step S01 one circuit member 21 and solder bump forming member 1 are supplied toward the first implementation region R2 (step S01).
  • step S01 the solder bump forming member 1 is supplied from the first supply section 13 to the first implementation region R2 so that the concave portion 3 faces upward.
  • the circuit member 21 is supplied from the second supply section 14 to the placement region R1 so that the electrodes 22 face downward.
  • step S02 the solder particles S1 held in the recesses 3 and the electrodes 22 of the circuit member 21 are arranged to face each other (step S02).
  • step S02 the stage 12 is displaced while the circuit member 21 is attracted to the heating and pressurizing head 16, and as shown in FIG. .
  • the position of the alignment mark 4 on the side of the solder bump forming member 1 is confirmed by the imaging device 15A, and the position of the alignment mark on the side of the circuit member 21 is confirmed by the imaging device 15B.
  • the solder particles S1 and the electrodes 22 of the circuit member 21 are aligned.
  • step S03 as shown in FIG. 6, the circuit member 21 sucked to the heating and pressurizing head 16 is lowered toward the solder bump forming member 1 on the stage 12, and the electrodes 22 are pressed against the solder particles S1. Heat up.
  • the heating and pressurizing head 16 is moved while the electrode 22 is pressed against the solder bump forming member 1 side. It may be heated to a temperature higher than the melting point of the solder particles S1 (for example, about 130° C.
  • the heating and pressurizing head 16 may be heated to a temperature higher than the melting point of the solder particles S1 (for example, about 130° C. to 260° C.), and then the electrodes 22 may be pressed against the solder bump forming member 1 side.
  • the solder bumps S2 can be formed only on the electrodes 22, and formation of bridges by solder between the adjacent electrodes 22, 22 can be suppressed.
  • the pressing force of the electrode 22 against the solder bump forming member 1 by the heating and pressurizing head 16 is, for example, 0.1 MPa to 600 MPa.
  • This applied pressure may be 1 MPa to 300 MPa, or may be 10 MPa to 100 MPa.
  • the solder particles S1 held in each of the plurality of recesses 3 of the solder bump forming member 1 may be in a state in which they do not protrude outside the opening surface of the recesses 3. Therefore, when the electrode 22 is brought into contact with the first surface 2a of the solder bump forming member 1, the electrode 22 is in contact with the solder particles S1 in the recess 3 that do not protrude outside the opening surface of the recess 3. do not.
  • the heating and pressurizing head 16 is heated to a temperature higher than the melting point of the solder particles S1, as shown in FIG. partition wall 8) is deformed in the direction of compression. As a result, the electrodes 22 enter the recesses 3 and the solder particles S1 come into contact with the electrodes 22, and the solder bumps S2 are transferred onto the electrodes 22 by the melting of the solder particles S1.
  • the heating and pressurizing head 16 is not heated. Even in this state, the elastic body 9 can be deformed to bring the electrode 22 and the solder particles S1 into contact with each other. After the electrodes 22 and the solder particles S1 are brought into contact with each other, the heating and pressurizing head 16 is heated to a temperature equal to or higher than the melting point of the solder particles S1, whereby the solder bumps S2 are transferred onto the electrodes 22 by melting the solder particles S1. .
  • the heating and pressing by the heating and pressing head 16 are stopped. Thereafter, as shown in FIG. 7, the heating and pressurizing head 16 is lifted together with the circuit member 21, and the electrodes 22 of the circuit member 21 and the solder on the electrodes 22 are applied while the circuit member 21 is separated from the solder bump forming member 1. As shown in FIG. Bump S2 is cooled. As a result, the electrodes 22 and the solder bumps S2 formed by melting the solder particles S1 are fixed and electrically connected to each other. A circuit member 21A with solder bumps is obtained by electrical connection between the electrodes 22 and the solder bumps S2.
  • this method of forming solder bumps includes the steps of preparing a solder bump forming member having a plurality of recesses and having deformable portions in which the constituent portions of the recesses are deformable at the melting point of the solder particles; a step of arranging the solder particles held in the recesses of the bump forming member so as to face the electrode; a step of heating the electrode to a temperature equal to or higher than the melting point of the solder particles; and a step of pressing the electrode against the solder bump forming member.
  • the electrode is pressed and heat is applied, the deformed portion is deformed, and the solder particles held in the concave portion can be exposed to the electrode side. Therefore, even if the shape of the solder particles is not uniform, the reliability of transfer of the solder particles to the electrodes can be ensured.
  • the atmosphere during heating and pressurization in step S03 may be a deoxidizing atmosphere.
  • the deoxidizing atmosphere may be, for example, an inert gas atmosphere using nitrogen, argon, or the like, or a vacuum atmosphere.
  • a reflow furnace under a nitrogen atmosphere
  • a vacuum reflow furnace that is generally used in the solder bonding process
  • a conveyor type reflow furnace under a nitrogen atmosphere, a batch type (chamber type) reflow furnace, or the like can be used.
  • step S02 or between steps S02 and S03 a step of exposing at least one of the solder particles S1 and the electrodes 22 to a reducing atmosphere may be further provided.
  • a step of exposing at least one of the solder particles S1 and the electrodes 22 to a reducing atmosphere may be further provided.
  • the process of step S03 may be performed in a reducing atmosphere.
  • hydrogen gas, hydrogen radicals, formic acid gas, etc. can be used to form the reducing atmosphere.
  • a hydrogen reduction furnace, a hydrogen reflow furnace, a hydrogen radical furnace, a formic acid furnace, a vacuum furnace of these, a continuous furnace, a conveyor furnace, or the like can be used.
  • connection structure 41 is formed.
  • the other circuit member 31 is supplied toward the second implementation region R3 (step S04).
  • the circuit member 31 is supplied from the third supply unit 17 to the second implementation region R3 so that the electrode 32 faces upward.
  • An underfill material 42 may be arranged so as to cover the electrodes 32 in the circuit member 31 supplied to the second implementation region R3.
  • step S05 the circuit member 21A with solder bumps and the circuit member 31 are arranged to face each other (step S05).
  • step S05 as shown in FIG. 8, the stage 12 is displaced while the circuit member 21A with solder bumps is attracted to the heating and pressurizing head 16, and the circuit member 21A with solder bumps is placed on the second implementation area R3. do.
  • the position of the alignment mark on the circuit member 31 side is confirmed by the imaging device 15A, and the position of the alignment mark on the circuit member 21A with solder bumps is confirmed by the imaging device 15B. and the electrode 32 of the circuit member 31 are aligned.
  • step S06 the circuit member 21 and the circuit member 31 are heated and pressurized through the solder bumps S2 (step S06).
  • step S06 as shown in FIG. 9, the circuit member 21A with solder bumps sucked by the heating and pressurizing head 16 is lowered toward the circuit member 31 on the stage 12, and the electrodes 22 of the circuit member 21A with solder bumps and the circuit are separated.
  • the solder bump S2 By sandwiching the solder bump S2 between the electrode 32 of the member 31 and heating the heating and pressurizing head 16 to a temperature higher than the melting point of the solder particle S1 (for example, about 130° C. to 260° C.), the solder bump is formed between the electrodes 22 and 32. S2 may be melted.
  • the electrodes 22 of the circuit member 21A with solder bumps and the electrodes 32 of the circuit member 31 are connected to solder bumps.
  • Solder bump S2 may be melted between electrodes 22 and 32 by sandwiching S2.
  • the pressure applied to the circuit member 21 and the circuit member 31 by the heating and pressure head 16 can be made equal to the pressure used in step S03.
  • the heating and pressurization by the heating and pressurizing head 16 are stopped, and the heating and pressurizing head 16 is raised without attracting the circuit member 21 .
  • the electrode 22 of the circuit member 21, the electrode 32 of the circuit member 31, and the solder bump S2 between the electrodes 22, 32 are cooled.
  • the electrodes 22, 32 and the solder bumps S2 are fixed, and the circuit members 21, 31 are electrically connected to each other.
  • the connection structure 41 shown in FIG. 3 is obtained.
  • the obtained connection structure 41 is adsorbed to the heating/pressurizing head 16 and transferred to a predetermined placement area to complete the process (step S07).
  • Step S06 may also include a step of exposing at least one of the solder bumps S2 and the electrodes 22, 32 to a reducing atmosphere.
  • a reducing atmosphere for example, hydrogen gas, hydrogen radicals, formic acid gas, or the like can be used to form the reducing atmosphere, as in step S03.
  • a hydrogen reduction furnace, a hydrogen reflow furnace, a hydrogen radical furnace, a formic acid furnace, a vacuum furnace of these, a continuous furnace, a conveyor furnace, or the like can be used.
  • a material having a reducing action can also be used.
  • a flux material or material containing a flux component can be placed near the solder bumps S2 and the electrodes 22,32.
  • the flux material and the material containing the flux component pastes, films, etc. containing these materials can be used.
  • Pastes and films containing flux components may contain thermosetting materials.
  • the thermosetting component is cured at the same time as the solder bumps S2 are melted, and the circuit members 21 and 31 can be fixed together. Curing of the thermosetting material may be performed by heating again in a post-process, separately from heating for melting the solder bumps S2.
  • solder bump forming method the solder particles S1 are held in the plurality of concave portions 3 of the solder bump forming member 1, and by applying heat and pressure together with the electrodes 22 to be transferred, the electrodes 22 are formed.
  • a solder bump S2 may be formed thereon.
  • the constituent portion of the concave portion 3 in the solder bump forming member 1 is formed by the deformable portion 6 that is deformable at the melting point of the solder particles S1.
  • the deformation portion 6 is deformed, and the solder particles S1 held in the recesses 3 can be exposed to the electrode 22 side. Therefore, in this solder bump forming method, the reliability of transfer of the solder particles S1 to the electrodes 22 can be ensured even if the shapes of the solder particles S1 are not uniform.
  • the elastic body 9 having a bulk elastic modulus of 0.5 GPa or more and 5 GPa or less at the melting point of the solder particles S1 constitutes the deformation portion 6 .
  • the bulk elastic modulus of the deformable portion 6 By setting the bulk elastic modulus of the deformable portion 6 to 5 GPa or less, when the electrode 22 is pressed against the first surface 2a side and heat is applied, the deformable portion 6 is sufficiently deformed, and the solder held in the recess 3 Particles S1 can be more reliably exposed to the electrode side.
  • the bulk elastic modulus of the deformable portion 6 to 0.5 GPa or more, the shape retention of the concave portion 3 can be maintained, and the holding performance of the solder particles S1 during transfer can be ensured.
  • the solder particles S1 are heated to a temperature equal to or higher than the melting point while the electrodes 22 are pressed against the first surface 2a of the solder bump forming member 1.
  • FIG. 1 the solder particles S1 are melted and the deformation portion 6 is deformed while the solder particles S1 are sandwiched between the electrodes 22 and the solder bump forming member 1, so that the solder bumps S2 formed on the electrodes 22 are deformed. Positional deviation can be suppressed. Therefore, it is possible to form the solder particles S1 at the target position on the electrode 22 with higher accuracy.
  • solder particles S1 are arranged singly in each of the plurality of recesses 3. As a result, the solder particles S1 having a relatively large particle size can be transferred to the electrodes 22 with a certain degree of certainty.
  • the average particle size of the solder particles S1 is 1 ⁇ m to 35 ⁇ m.
  • it is generally difficult to align the shape of the solder particles S1. can guarantee the certainty of transcription.
  • the deformation portion 6 is provided with a thickness corresponding to the depth of the recess 3 from the first surface 2a toward the second surface 2b. is not limited to
  • the thickness T of the deformation portion 6 may be smaller than the depth D of the recess 3, as in a solder bump forming member 1A shown in FIG.
  • the deformed portion 6 is formed only on the first surface 2a side of the partition wall portion 8 separating the adjacent concave portions 3,3.
  • the first surface 2a side of the inner wall surface 3a of the recessed portion 3 is formed by the deformation portion 6, while the second surface 2b side of the inner wall surface 3a of the recessed portion 3 and the bottom surface 3b of the recessed portion 3 are formed by the base portion 7.
  • FIG. 1 the first surface 2a side of the inner wall surface 3a of the recessed portion 3 is formed by the deformation portion 6, while the second surface 2b side of the inner wall surface 3a of the recessed portion 3 and the bottom surface 3b of the recessed portion 3 are formed by the base portion 7.
  • the thickness T of the deformation portion 6 is made smaller than the depth D of the recess 3 as in the example of FIG. It may protrude from the interface toward the first surface 2a. That is, the height H of the solder particles S1 may satisfy H>DT with respect to the depth D of the concave portion 3 and the thickness T of the deformed portion 6. FIG. By doing so, it is possible to ensure reliable contact between the solder particles S1 and the electrodes 22 when the deformation portion 6 is deformed.
  • the deformable portion 6 does not extend beyond the depth of the recess 3 from the first surface 2a. It may be provided with a thickness of 1/2 or more of the depth D of the recess 3 in the depth direction. In this case, the deformation portion 6 may be provided with a thickness of 3/5 or more of the depth D of the recess 3 in the depth direction of the recess 3 from the first surface 2a, or a thickness of 4/5 or more. It may be provided at
  • the thickness T of the deformed portion 6 may be larger than the depth D of the recessed portion 3, for example, like the solder bump forming member 1B shown in FIG. 10(b).
  • the entire partition wall 8 that separates the adjacent recesses 3 and 3 serves as the deformed portion 6 , and both the inner wall surface 3 a and the bottom surface 3 b of the recessed portion 3 are formed of the deformed portion 6 .
  • the interface between the deformable portion 6 and the base portion 7 can be set at an arbitrary position between the bottom surface 3b of the recess 3 and the second surface 2b. For example, like a solder bump forming member 1C shown in FIG.
  • none of the solder particles S1 protrude outward from the opening surface of the recess 3, but the present disclosure does not require the heights of the solder particles S1 in the recess 3 to be uniform. Some or all of the solder particles S1 may protrude outward from the opening surface of the recess 3 in order to ensure the transfer of the solder particles S1 to the recess 3 with certainty. That is, as shown in FIG. 11A, the height H of some or all of the solder particles S1 may satisfy H>D with respect to the depth D of the recesses 3 .
  • a single solder particle S1 is arranged in each of the plurality of recesses 3, but a plurality of solder particles S1 may be arranged in each of the plurality of recesses 3.
  • a plurality of solder particles S1 having an average particle size smaller than that in the example of FIG.
  • the volume of the solder particles S1 held in the recesses 3 can be easily adjusted, and the size and height of the solder bumps S2 formed on the electrodes 22 can be easily adjusted within a certain range.
  • the probability of contact between the electrodes 22 and the solder particles S1 can be increased, and the formation of the solder bumps S2 on the electrodes 22 can be performed more reliably.
  • the C.I. V. The value may be 20% or less. As a result, it is possible to sufficiently secure conduction reliability and insulation reliability in connecting the circuit members 21 and 31 using the solder bumps S2.
  • the force acting between the solder particles S1 and the partition wall portion 8 (for example, an intermolecular force such as van der Waals force) is greater than the gravity acting on the solder particles S1. is considered to be large. Therefore, the solder particles S1 can remain in the recesses 3 even when the recesses 3 are directed downward.
  • the solder particles S1 have a flat portion on the outer surface and the flat portion is in contact with the inner wall surface 3a or the bottom surface 3b of the recess 3, the solder particles S1 can be more preferably prevented from falling out of the recess 3.
  • Solder bump forming members 1, 1A to 1C... Solder bump forming members, 3... Concave portions, 6... Deformable parts, 9... Elastic bodies, 21... Circuit members, 22... Electrodes, S1... Solder particles, S2... Solder bumps.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
PCT/JP2022/026029 2021-06-30 2022-06-29 はんだバンプ形成方法 Ceased WO2023277083A1 (ja)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139427A (ja) * 1994-11-04 1996-05-31 Mitsubishi Electric Corp 球状電極の形成方法
JPH09246324A (ja) * 1996-03-08 1997-09-19 Hitachi Ltd 電子部品及びそのバンプ形成方法
JP2006216702A (ja) * 2005-02-02 2006-08-17 Tdk Corp 半田ボールの転写方法及び転写装置
JP2014082362A (ja) * 2012-10-17 2014-05-08 Mitsubishi Electric Corp 電子機器の製造方法
JP2016172912A (ja) * 2015-03-18 2016-09-29 三菱マテリアル株式会社 ハンダ粉末の製造方法及びこの粉末を用いたハンダ用ペースト
JP2018206953A (ja) * 2017-06-05 2018-12-27 三菱マテリアル株式会社 はんだバンプ形成方法及びはんだペースト

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017157626A (ja) 2016-02-29 2017-09-07 三菱マテリアル株式会社 はんだバンプの形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139427A (ja) * 1994-11-04 1996-05-31 Mitsubishi Electric Corp 球状電極の形成方法
JPH09246324A (ja) * 1996-03-08 1997-09-19 Hitachi Ltd 電子部品及びそのバンプ形成方法
JP2006216702A (ja) * 2005-02-02 2006-08-17 Tdk Corp 半田ボールの転写方法及び転写装置
JP2014082362A (ja) * 2012-10-17 2014-05-08 Mitsubishi Electric Corp 電子機器の製造方法
JP2016172912A (ja) * 2015-03-18 2016-09-29 三菱マテリアル株式会社 ハンダ粉末の製造方法及びこの粉末を用いたハンダ用ペースト
JP2018206953A (ja) * 2017-06-05 2018-12-27 三菱マテリアル株式会社 はんだバンプ形成方法及びはんだペースト

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TW202320599A (zh) 2023-05-16

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