WO2023207246A1 - 一种高振实密度三元前驱体及其制备方法 - Google Patents
一种高振实密度三元前驱体及其制备方法 Download PDFInfo
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- WO2023207246A1 WO2023207246A1 PCT/CN2023/074950 CN2023074950W WO2023207246A1 WO 2023207246 A1 WO2023207246 A1 WO 2023207246A1 CN 2023074950 W CN2023074950 W CN 2023074950W WO 2023207246 A1 WO2023207246 A1 WO 2023207246A1
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- Prior art keywords
- tap density
- ternary precursor
- high tap
- concentration
- surfactant
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- 239000002243 precursor Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000007788 liquid Substances 0.000 claims abstract description 65
- 239000004094 surface-active agent Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000012266 salt solution Substances 0.000 claims abstract description 36
- 239000011343 solid material Substances 0.000 claims abstract description 33
- 239000000243 solution Substances 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 31
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 239000008139 complexing agent Substances 0.000 claims abstract description 15
- 239000011259 mixed solution Substances 0.000 claims abstract description 14
- 239000000839 emulsion Substances 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 9
- KFDQGLPGKXUTMZ-UHFFFAOYSA-N [Mn].[Co].[Ni] Chemical compound [Mn].[Co].[Ni] KFDQGLPGKXUTMZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000926 separation method Methods 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 99
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 50
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 35
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 33
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 33
- 239000011164 primary particle Substances 0.000 claims description 26
- 229910021529 ammonia Inorganic materials 0.000 claims description 25
- 238000003756 stirring Methods 0.000 claims description 25
- 239000007864 aqueous solution Substances 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 20
- 229910021645 metal ion Inorganic materials 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- 239000011163 secondary particle Substances 0.000 claims description 16
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 13
- 229910017052 cobalt Inorganic materials 0.000 claims description 13
- 239000010941 cobalt Substances 0.000 claims description 13
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- -1 precipitant Substances 0.000 claims description 12
- 239000011572 manganese Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 230000001376 precipitating effect Effects 0.000 claims description 5
- 150000004996 alkyl benzenes Chemical group 0.000 claims description 3
- 229940077388 benzenesulfonate Drugs 0.000 claims description 3
- 239000007774 positive electrode material Substances 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 60
- 239000010406 cathode material Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 239000007787 solid Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 8
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 6
- 238000000975 co-precipitation Methods 0.000 description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 2
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 2
- 229910016739 Ni0.5Co0.2Mn0.3(OH)2 Inorganic materials 0.000 description 2
- 229910017071 Ni0.6Co0.2Mn0.2(OH)2 Inorganic materials 0.000 description 2
- 229910017223 Ni0.8Co0.1Mn0.1(OH)2 Inorganic materials 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 2
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 2
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 2
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 2
- 229940044175 cobalt sulfate Drugs 0.000 description 2
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 2
- QGVQVNIIRBPOAM-UHFFFAOYSA-N dodecyl naphthalene-1-sulfonate;sodium Chemical compound [Na].C1=CC=C2C(S(=O)(=O)OCCCCCCCCCCCC)=CC=CC2=C1 QGVQVNIIRBPOAM-UHFFFAOYSA-N 0.000 description 2
- 230000012010 growth Effects 0.000 description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- 239000011565 manganese chloride Substances 0.000 description 2
- 235000002867 manganese chloride Nutrition 0.000 description 2
- 229940099607 manganese chloride Drugs 0.000 description 2
- 229940099596 manganese sulfate Drugs 0.000 description 2
- 239000011702 manganese sulphate Substances 0.000 description 2
- 235000007079 manganese sulphate Nutrition 0.000 description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229940053662 nickel sulfate Drugs 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- SEVNKUSLDMZOTL-UHFFFAOYSA-H cobalt(2+);manganese(2+);nickel(2+);hexahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mn+2].[Co+2].[Ni+2] SEVNKUSLDMZOTL-UHFFFAOYSA-H 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G53/00—Compounds of nickel
- C01G53/006—Compounds containing, besides nickel, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G53/00—Compounds of nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
- H01M4/50—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese
- H01M4/505—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
- H01M4/52—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
- H01M4/525—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/50—Agglomerated particles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/11—Powder tap density
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the invention belongs to the technical field of lithium battery cathode materials, and particularly relates to a high tap density ternary precursor and a preparation method thereof.
- the cathode material is the most important part of the battery, which determines the performance and use field of the battery to a certain extent.
- Ternary cathode materials have gradually become a mainstream product in the market due to their advantages of high energy density.
- the co-precipitation method is commonly used to first prepare the nickel cobalt manganese hydroxide precursor, and then mix and sinter the precursor with the lithium source to prepare the cathode material.
- the structure and properties of ternary precursors directly determine the structure and properties of ternary cathode materials.
- the cathode material can inherit the morphology and structural characteristics of the precursor.
- the various properties of the cathode material largely depend on the physical and chemical properties of its precursor.
- the technical content of the precursor preparation accounts for 60% of the technical content of the entire ternary material. Therefore, the structure and preparation process of the precursor have a crucial impact on the performance of the cathode material.
- the co-precipitation method is the mainstream preparation method of precursor materials. It can accurately control the content of each component and achieve atomic-level mixing of the components. It can be synthesized by adjusting the solution concentration, pH value, reaction time, reaction temperature, stirring speed, etc. Process parameters can prepare materials with different particle sizes, morphologies, densities, and crystallization degrees.
- the co-precipitation method is currently the most widely used and its industrialization is relatively mature.
- the existing co-precipitation method is used to prepare precursor materials, due to the rapid formation and rapid agglomeration of primary particles during co-precipitation, the precipitation rate is relatively fast, resulting in The primary particle size is generally small, the crystallinity is low, the primary particles are not dense enough, the overall density of the precursor is low, and the tap density is low, which affects the cycle performance of the cathode material prepared by subsequent sintering.
- the present invention aims to solve at least one of the technical problems existing in the prior art.
- the present invention proposes a high tap density ternary precursor and a preparation method thereof, which can prepare coarse and dense precursor particles.
- the precursor particles have a high tap density, thereby improving the subsequent sintering of the cathode material. cycle performance.
- a method for preparing a high tap density ternary precursor including the following steps:
- step (1) Add nickel, cobalt and manganese metal ion mixed salt solution, precipitant, complexing agent and surfactant to the mixed solution in step (1) to react so that the D50 of the material in the mixed solution reaches 1.0-3.0 ⁇ m;
- step (3) Perform solid-liquid separation on the material in step (2) to obtain solid material. After drying the solid material, crush it to obtain pulverized material;
- step (4) Add nickel, cobalt and manganese metal ion mixed salt solution, precipitant, complexing agent and surfactant to the mixed solution in step (4) to react so that the D50 of the material in the mixed solution reaches 5.0-15.0 ⁇ m;
- step (6) Perform solid-liquid separation on the material in step (5) to obtain a solid material. After washing and drying the solid material, a high tap density ternary precursor is obtained.
- the alkaline bottom liquid is a mixed liquid of sodium hydroxide and ammonia water
- the pH value of the alkaline bottom liquid is 10.0-11.0
- the ammonia concentration is 2.0-10.0g/L.
- the mass concentration of silica in the mixed solution of step (1) is 1-3%, and the particle size of silica is 1-100 nm.
- the total concentration of nickel-cobalt-manganese metal ions in the nickel-cobalt-manganese metal ion mixed salt solution is 1.0-2.5 mol/L.
- the precipitating agent is a sodium hydroxide solution with a concentration of 4.0-8.0 mol/L.
- the complexing agent is ammonia water with a concentration of 6.0-12.0 mol/L.
- the surfactant is at least one of an alkyl benzene sulfonate aqueous solution, an alkyl naphthalene sulfonate aqueous solution, and an alkane sulfonate aqueous solution, and the concentration of the surfactant is 0.1-2 mol/L.
- step (1) the silica emulsion is dispersed ultrasonically for 20-30 minutes and then the alkaline bottom solution is added.
- the particle size D50 of the pulverized material prepared in step (3) is 100-500 nm.
- the nickel, cobalt and manganese metal ion mixed salt solution, precipitant, complexing agent and surfactant are added in parallel flow, and the pH of the mixed solution is controlled during the addition process. 10.0-11.0, the ammonia concentration is 2.0-10.0g/L, and the flow rate of the surfactant is controlled to be 0.1-1 times that of the mixed salt solution.
- the reaction temperature in step (2) and step (5) is 45-65°C.
- a method for preparing a high tap density ternary precursor includes the following steps:
- the surfactant is alkyl benzene sulfonate, alkyl naphthalene sulfonate, or alkane sulfonate;
- alkaline bottom liquid is a mixture of sodium hydroxide and ammonia water.
- the pH value of the alkaline bottom liquid is 10.0-11.0.
- the ammonia concentration 2.0g/L-10.0g/L;
- the bottom liquid is a mixture of sodium hydroxide, ammonia water and surfactant.
- the pH value of the bottom liquid is 10.0- 11.0, ammonia concentration is 2.0-10.0g/L, surfactant concentration is 2mol/L;
- a high tap density ternary precursor is prepared by the above preparation method.
- the general chemical formula of the high tap density ternary precursor is Ni 1-ab Co a Mn b (OH) 2 ⁇ xSiO 2 , where 0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, which is composed of particles agglomerated
- the secondary particles are in the form of massive cubes, the particle size of the primary particles is 0.1-5.0 ⁇ m (1.0-3.0 ⁇ m in the preparation method), and the particle size of the agglomerated secondary particles is 5.0-15.0 ⁇ m.
- silica emulsion is added to the alkaline bottom liquid and surfactant is used to carry out co-precipitation reaction.
- the silica particles act as steric hindrance, which can effectively isolate the primary particles generated by the reaction and slow down the agglomeration of the primary particles. , so that the primary particles gradually grow up, and the surfactant plays a growth induction role and promotes the growth of primary particle crystals. Under the coordinated control of low pH, the primary particles can grow slowly and have better crystallinity; at the same time, further , the effective isolation of silica makes the material agglomeration not dense enough, which is conducive to subsequent airflow pulverization.
- Figure 1 is an SEM image of Example 1 of the present invention.
- a method for preparing a high tap density ternary precursor including the following steps:
- the bottom liquid is a mixture of sodium hydroxide and ammonia water.
- the pH value of the bottom liquid is 10.5 and the ammonia concentration is 6.0g/L;
- the bottom liquid is a mixture of sodium hydroxide, ammonia water and surfactant.
- the pH value of the bottom liquid is 10.5.
- the ammonia concentration is 6.0g/L, and the surfactant concentration is 2mol/L;
- a high tap density ternary precursor is prepared by the above preparation method. Its general chemical formula is Ni 0.6 Co 0.2 Mn 0.2 (OH) 2 ⁇ xSiO 2 . It is a secondary particle agglomerated by primary particles, and the primary particles are in the form of blocks. Shaped cube, the particle size of the primary particles is 0.1-5.0 ⁇ m, and the particle size of the agglomerated secondary particles is 10.5 ⁇ m.
- the SEM image of the high tap density ternary precursor is shown in Figure 1.
- a method for preparing a high tap density ternary precursor including the following steps:
- the bottom liquid is a mixture of sodium hydroxide and ammonia water.
- the pH value of the bottom liquid is 10.0 and the ammonia concentration is 2.0g/L;
- the bottom liquid is a mixture of sodium hydroxide, ammonia water and surfactant.
- the pH value of the bottom liquid is 10.0.
- the ammonia concentration is 2.0g/L, and the surfactant concentration is 2mol/L;
- a high tap density ternary precursor is prepared by the above preparation method. Its general chemical formula is Ni 0.8 Co 0.1 Mn 0.1 (OH) 2 ⁇ xSiO 2 . It is a secondary particle agglomerated by primary particles, and the primary particles are in the form of blocks. Cube-shaped, the particle size of the primary particles is 0.1-5.0 ⁇ m, and the particle size of the agglomerated secondary particles is 5.0 ⁇ m.
- a method for preparing a high tap density ternary precursor including the following steps:
- the bottom liquid is a mixture of sodium hydroxide and ammonia water.
- the pH value of the bottom liquid is 11.0 and the ammonia concentration is 10.0g/L;
- the bottom liquid is a mixture of sodium hydroxide, ammonia water and surfactant.
- the pH value of the bottom liquid is 11.0.
- the ammonia concentration is 10.0g/L, and the surfactant concentration is 2mol/L;
- a high tap density ternary precursor is prepared by the above preparation method. Its general chemical formula is Ni 0.5 Co 0.2 Mn 0.3 (OH) 2 ⁇ xSiO 2 . It is a secondary particle agglomerated by primary particles, and the primary particles are in the form of blocks. Cube-shaped, the particle size of the primary particles is 0.1-5.0 ⁇ m, and the particle size of the agglomerated secondary particles is 15.0 ⁇ m.
- a method for preparing a ternary precursor including the following steps:
- a ternary precursor is prepared by the above preparation method. Its general chemical formula is Ni 0.6 Co 0.2 Mn 0.2 (OH) 2 . It is a secondary particle agglomerated by primary particles, and the particle size of the secondary particles is 10.5 ⁇ m.
- a method for preparing a ternary precursor including the following steps:
- the bottom liquid is a mixture of sodium hydroxide and ammonia water.
- the pH value of the bottom liquid is 10.0 and the ammonia concentration is 2.0g/L;
- a ternary precursor is prepared by the above preparation method. Its general chemical formula is Ni 0.8 Co 0.1 Mn 0.1 (OH) 2 . It is a secondary particle agglomerated by primary particles, and the particle size of the secondary particles is 5.0 ⁇ m.
- a method for preparing a ternary precursor including the following steps:
- the bottom liquid is a mixture of sodium hydroxide and ammonia water.
- the pH value of the bottom liquid is 11.0 and the ammonia concentration is 10.0g/L;
- a ternary precursor is prepared by the above preparation method, and its general chemical formula is Ni 0.5 Co 0.2 Mn 0.3 (OH) 2 . It is a secondary particle agglomerated by primary particles, and the particle size of the secondary particles is 15.0 ⁇ m.
- the tap density of the ternary precursor prepared by the preparation method of the present invention is 1.73g/cm 3 and above, and can reach a maximum of 2.23g/cm 3 .
- Example 1 and Comparative Example 1 respectively.
- Example 2 and Comparative Example 2 and Example 3 and Comparative Example 3 that when no silica emulsion is added during the preparation process of the ternary precursor, the tap density of the finally prepared ternary precursor decreases significantly.
- Example 1 The ternary precursors of Example 1 and Comparative Example 1 were mixed with lithium carbonate respectively according to the total molar ratio of lithium element to nickel cobalt manganese: 1.08:1, mix evenly, and calcine at 850°C for 12 hours in an oxygen atmosphere to obtain the corresponding cathode materials.
- Example 2 The ternary precursors of Example 2 and Comparative Example 2 were mixed with lithium hydroxide respectively according to the total molar ratio of lithium element to nickel cobalt manganese of 1.08:1, and then calcined in an oxygen atmosphere at 800°C for 12 hours to obtain the corresponding Cathode material.
- Example 3 The ternary precursors of Example 3 and Comparative Example 3 were mixed with lithium carbonate respectively according to a total molar ratio of lithium element to nickel cobalt manganese of 1.08:1, and then calcined in an oxygen atmosphere at 900°C for 12 hours to obtain corresponding positive electrodes. Material.
- the positive electrode material obtained above was formulated into a button cell for electrochemical performance testing of lithium-ion batteries.
- the specific steps are: using N-methylpyrrolidone as the solvent, mix the positive electrode active material and acetylene in a mass ratio of 8:1:1. Mix black and PVDF evenly, apply it on aluminum foil, air dry at 80°C for 8 hours, and then vacuum dry at 120°C for 12 hours. Assemble the battery in an argon-protected glove box.
- the cathode is a lithium metal sheet
- the separator is a polypropylene film
- the electrolyte is 1M LiPF6-EC/DMC (1:1, v/v).
- the charge and discharge cut-off voltage is 2.7-4.3V.
- Table 2 The test results are shown in Table 2.
- the 0.1C discharge capacity can reach 173mAh/g and above, and the highest can reach 208mAh/g; after 100 cycles The discharge specific capacity can reach 167mAh/g and above, and the highest can reach 190mAh/g; the cycle retention rate can reach 91.3%, and the highest can reach 96.5%; at the same time, compare Example 1 and Comparative Example 1, Example 2 and Comparative Example 2 respectively. , Example 3 and Comparative Example 3, it can be seen that when the silica emulsion is not added during the preparation process of the ternary precursor, the performance of the final battery will decrease.
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Abstract
Description
Claims (10)
- 一种高振实密度三元前驱体的制备方法,其特征在于:包括以下步骤:(1)搅拌状态下在碱性底液中加入二氧化硅乳液形成混合液;(2)向步骤(1)的混合液中加入镍钴锰金属离子混合盐溶液、沉淀剂、络合剂及表面活性剂进行反应,使混合液中物料的D50达到1.0-3.0μm;(3)对步骤(2)的物料进行固液分离,得到固体料,将固体料干燥后,粉碎得到粉碎料;(4)将步骤(3)制得的粉碎料与碱性底液及表面活性剂混合;(5)向步骤(4)的混合液中加入镍钴锰金属离子混合盐溶液、沉淀剂、络合剂及表面活性剂进行反应,使混合液中物料的D50达到5.0-15.0μm;(6)对步骤(5)的物料进行固液分离,得到固体料,将固体料洗涤、干燥,即得到高振实密度三元前驱体。
- 根据权利要求1所述的高振实密度三元前驱体的制备方法,其特征在于:所述碱性底液为氢氧化钠和氨水的混合液,所述碱性底液的pH值为10.0-11.0,氨浓度为2.0-10.0g/L。
- 根据权利要求1所述的高振实密度三元前驱体的制备方法,其特征在于:步骤(1)的混合液中二氧化硅的质量浓度为1-3%,二氧化硅的颗粒粒径为1-100nm。
- 根据权利要求1所述的高振实密度三元前驱体的制备方法,其特征在于:所述镍钴锰金属离子混合盐溶液中镍钴锰金属离子总浓度为1.0-2.5mol/L。
- 根据权利要求1所述的高振实密度三元前驱体的制备方法,其特征在于:所述沉淀剂为浓度为4.0-8.0mol/L的氢氧化钠溶液。
- 根据权利要求1所述的高振实密度三元前驱体的制备方法,其特征在于:所述络合剂为浓度为6.0-12.0mol/L的氨水。
- 根据权利要求1所述的高振实密度三元前驱体的制备方法,其特征在于:所述表面活性剂为烷基苯磺酸盐水溶液、烷基萘磺酸盐水溶液、烷磺酸盐水溶液 中的至少一种,所述表面活性剂的浓度为0.1-2mol/L。
- 根据权利要求1所述的高振实密度三元前驱体的制备方法,其特征在于:步骤(3)制得的粉碎料的粒径D50为100-500nm。
- 一种高振实密度三元前驱体,其特征在于:由权利要求1-8中任一项所述的制备方法制备得到。
- 根据权利要求9所述的高振实密度三元前驱体,其特征在于:所述高振实密度三元前驱体的化学通式为Ni1-a-bCoaMnb(OH)2·xSiO2,其中,0<a<1,0<b<1,其是由一次颗粒团聚的二次颗粒,一次颗粒呈块状立方体,一次颗粒的粒度为0.1-5.0μm,团聚的二次颗粒的粒度为5.0-15.0μm。
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